Semiconductor equipment

Abstract

The present invention provides a semiconductor device that has a light detection function and a high-resolution display unit. [Solution] A semiconductor device having a plurality of pixels, each pixel having first and second photodetectors, first to fifth transistors, a capacitor, and a first wiring. One electrode of the first photodetector is electrically connected to the first wiring, and the other electrode is electrically connected to either the source or the drain of the first transistor. One electrode of the second photodetector is electrically connected to the first wiring, and the other electrode is electrically connected to either the source or the drain of the second transistor. The other source or drain of the second transistor is electrically connected to the other source or drain of the first transistor. The other source or drain of the first transistor is electrically connected to one electrode of the capacitor, either the source or the drain of the third transistor, and the gate of the fourth transistor.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device, a display device, a display module, and electronic equipment. Another aspect of the present invention relates to a method for manufacturing a display device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, information terminal devices such as smartphones, tablet computers, and notebook PCs (personal computers) have become widespread. These devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use. There is a demand for information terminal devices with various functions, such as image display capabilities, touch sensor capabilities, and fingerprint imaging capabilities for authentication.

[0004] For example, Patent Document 1 discloses an electronic device equipped with a fingerprint sensor in the push-button switch section.

[0005] As a display device, for example, a light-emitting device with a light-emitting element has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0056493

Summary of the Invention

Problems to be Solved by the Invention

[0007] One aspect of the present invention is to provide a semiconductor device having a light detection function and a high-definition display unit. One aspect of the present invention is to provide a semiconductor device having a light detection function and a high-resolution display unit. One aspect of the present invention is to provide a semiconductor device having a light detection function and a large-sized display unit. One aspect of the present invention is to provide a semiconductor device having a light detection function and high reliability.

[0008] One aspect of the present invention is to provide a method for manufacturing a semiconductor device having a light detection function and a high-definition display unit. One aspect of the present invention is to provide a method for manufacturing a semiconductor device having a light detection function and a high-resolution display unit. One aspect of the present invention is to provide a method for manufacturing a semiconductor device having a light detection function and a large-sized display unit. One aspect of the present invention is to provide a method for manufacturing a semiconductor device having a light detection function and high reliability. One aspect of the present invention is to provide a method for manufacturing a semiconductor device having a light detection function with high yield.

[0009] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims.

Means for Solving the Problems

[0010] One aspect of the present invention is a semiconductor device having a plurality of pixels. Each pixel has a first pixel circuit. The first pixel circuit includes a first light-receiving device, a second light-receiving device, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, and the other electrode of the first light-receiving device is electrically connected to one of the source or drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, and the other electrode of the second light-receiving device is electrically connected to one of the source or drain of the second transistor. The other of the source or drain of the second transistor is electrically connected to the other of the source or drain of the first transistor. The other of the source or drain of the first transistor is electrically connected to one electrode of the capacitor. The other of the source or drain of the first transistor is electrically connected to one of the source or drain of the third transistor. The other of the source or drain of the first transistor is electrically connected to the gate of the fourth transistor. One of the source or drain of the fourth transistor is electrically connected to one of the source or drain of the fifth transistor.

[0011] In the semiconductor device described above, it is preferable that the first light-receiving device has a function of detecting visible light, and the second light-receiving device has a function of detecting infrared light.

[0012] In the semiconductor device described above, it is preferable to have a second wiring. The second wiring is electrically connected to the other of the source or drain of the third transistor. Preferably, the potential of the second wiring is lower than the potential of the first wiring.

[0013] In the semiconductor device described above, it is preferable to have a second wiring. The second wiring is electrically connected to the other of the source or drain of the third transistor. Preferably, the potential of the second wiring is higher than the potential of the first wiring.

[0014] In the semiconductor device described above, it is preferable that the pixels have a second pixel circuit. The second pixel circuit has a first light-emitting device. The first light-emitting device has the function of emitting visible light, and one electrode of the first light-emitting device is electrically connected to the first wiring.

[0015] In the semiconductor device described above, it is preferable that the pixels have a third pixel circuit. The third pixel circuit has a second light-emitting device. The second light-emitting device has the function of emitting infrared light, and one electrode of the second light-emitting device is electrically connected to the first wiring.

[0016] One aspect of the present invention is an electronic device having the aforementioned semiconductor device, a second light-emitting device, and a housing. The second light-emitting device has the function of emitting infrared light, and the second light-emitting device has the function of emitting light to the outside via the semiconductor device. [Effects of the Invention]

[0017] According to one aspect of the present invention, a semiconductor device having a light detection function and a high-resolution display unit can be provided. According to one aspect of the present invention, a semiconductor device having a light detection function and a high-resolution display unit can be provided. According to one aspect of the present invention, a semiconductor device having a large display unit with a light detection function can be provided. According to one aspect of the present invention, a highly reliable semiconductor device having a light detection function can be provided.

[0018] According to one aspect of the present invention, a method for manufacturing a semiconductor device having a light detection function and a high-resolution display unit can be provided. According to one aspect of the present invention, a method for manufacturing a semiconductor device having a light detection function and a high-resolution display unit can be provided. According to one aspect of the present invention, a method for manufacturing a semiconductor device having a large display unit with a light detection function can be provided. According to one aspect of the present invention, a method for manufacturing a highly reliable semiconductor device having a light detection function can be provided. According to one aspect of the present invention, a method for manufacturing a semiconductor device having a light detection function with a high yield can be provided.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0020] [Figure 1] Figure 1A is a block diagram showing an example of a display device. Figure 1B is a diagram showing an example of a pixel in a display device. [Figure 2] Figures 2A and 2B show an example of a pixel circuit. [Figure 3] Figure 3 shows an example of a pixel circuit. [Figure 4] Figure 4A is a block diagram showing an example of a readout circuit. Figure 4B is a circuit diagram of the readout circuit. [Figure 5] Figure 5 shows an example of the display unit of a display device. [Figure 6] Figure 6 shows an example of the display unit of a display device. [Figure 7] Figure 7 shows an example of a display device. [Figure 8] Figures 8A and 8B illustrate an example of how a display device operates. [Figure 9] Figure 9 illustrates an example of how a display device operates. [Figure 10] Figure 10 shows an example of the display unit of a display device. [Figure 11] Figure 11 shows an example of the display unit of a display device. [Figure 12] Figures 12A and 12B show examples of the display unit of a display device. [Figure 13] Figures 13A and 13B show examples of the display unit of a display device. [Figure 14] Figure 14A shows an example of a pixel in a display device. Figures 14B and 14C are cross-sectional views showing an example of an electronic device. [Figure 15]Figures 15A and 15B are cross-sectional views showing an example of an electronic device. [Figure 16] Figures 16A to 16C show examples of pixels in a display device. Figure 16D is a cross-sectional view showing an example of an electronic device. [Figure 17] Figure 17 shows an example of a display device layout. [Figure 18] Figure 18 shows an example of a display device layout. [Figure 19] Figure 19 shows an example of a display device layout. [Figure 20] Figure 20 shows an example of a display device layout. [Figure 21] Figures 21A and 21B show examples of pixels in a display device. Figures 21C and 21D are cross-sectional views showing examples of electronic equipment. [Figure 22] Figure 22 shows an example of a display device layout. [Figure 23] Figures 23A to 23C show an example of a display device. [Figure 24] Figures 24A to 24C show examples of electronic devices. [Figure 25] Figure 25A is a top view showing an example of a display device. Figure 25B is a cross-sectional view showing an example of a display device. [Figure 26] Figures 26A to 26D show an example of a method for manufacturing a display device. [Figure 27] Figures 27A to 27C show an example of a method for manufacturing a display device. [Figure 28] Figures 28A to 28C show an example of a method for manufacturing a display device. [Figure 29] Figures 29A to 29C show an example of a method for manufacturing a display device. [Figure 30] Figure 30A is a top view showing an example of a display device. Figure 30B is a cross-sectional view showing an example of a display device. [Figure 31] Figure 31 is a perspective view showing an example of a display device. [Figure 32] Figure 32A is a cross-sectional view showing an example of a display device. Figures 32B and 32C are cross-sectional views showing an example of a transistor. [Figure 33] Figures 33A to 33D show examples of the configuration of a light-emitting device. [Figure 34] Figures 34A and 34B are cross-sectional views showing an example of a display device. [Figure 35] Figures 35A and 35B are cross-sectional views showing an example of a display device. [Figure 36] Figures 36A and 36B are cross-sectional views showing an example of a display device. [Figure 37] Figures 37A to 37C are cross-sectional views showing an example of a display device. [Figure 38] Figures 38A and 38B show examples of electronic devices. [Figure 39] Figures 39A to 39D show examples of electronic devices. [Figure 40] Figures 40A to 40F show examples of electronic devices. [Figure 41] Figure 41 shows an example of a vehicle. [Modes for carrying out the invention]

[0021] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0022] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0023] The positions, sizes, and extents of each component shown in the drawings may not represent their actual positions, sizes, and extents for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and extents disclosed in the drawings.

[0024] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0025] (Embodiment 1) In this embodiment, a display device will be described as a semiconductor device according to one aspect of the present invention.

[0026] A display device according to one aspect of the present invention has a pixel including a light-emitting device, a first light-receiving device, and a second light-receiving device.

[0027] A display device according to one aspect of the present invention can display an image using a light-emitting device. Furthermore, a display device according to one aspect of the present invention can perform either or both imaging and sensing using a first or second light-receiving device.

[0028] The following sections will explain more specific examples using diagrams.

[0029] <Example Configuration> Figure 1A shows a block diagram of a display device according to one aspect of the present invention. The display device 10 shown in Figure 1A has a display unit 11, a drive circuit unit 12, a drive circuit unit 13, a drive circuit unit 14, and a circuit unit 15. The display unit 11 has a plurality of pixels 30 arranged in a matrix.

[0030] An example of the configuration of pixel 30 is shown in Figure 1B. Pixel 30 has sub-pixels G, B, R, PS, and IRS. Sub-pixels G, B, and R each have a light-emitting function (hereinafter also referred to as a light-emitting function). Sub-pixels PS and IRS each have a light-receiving function (hereinafter also referred to as a light-receiving function). In one aspect of the present invention, the display unit of a display device has, in addition to the function of displaying an image, one or both of the imaging function and the sensing function.

[0031] For example, sub-pixel R may emit red light, sub-pixel G may emit green light, and sub-pixel B may emit blue light. This allows the display device 10 to display in full color. Although an example of a pixel 30 having three sub-pixels is shown here, it may have four or more sub-pixels. Furthermore, pixel 30 may have sub-pixels that emit light other than red, green, and blue. For example, in addition to the three sub-pixels mentioned above, pixel 30 may have a sub-pixel that emits white light, or a sub-pixel that emits yellow light, and so on.

[0032] The sub-pixel PS has the function of receiving visible light. The sub-pixel IRS has the function of receiving infrared light.

[0033] Sub-pixels R, G, and B each have a light-emitting device (also called a light-emitting element). Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light.

[0034] Sub-pixels PS and IRS each have a photodetector (also called a photodetector) that functions as a photoelectric conversion element. The photodetector detects light incident on it and functions as a photoelectric conversion element that generates an electric charge. The amount of charge generated is determined based on the amount of light incident on the photodetector. Sub-pixel PS has a photodetector that has the function of receiving visible light. Sub-pixel IRS has a photodetector that has the function of receiving infrared light. The photodetector that has the function of receiving visible light is sensitive to visible light (light with a wavelength of 400 nm or more and less than 700 nm). The photodetector that receives infrared light is sensitive to infrared light (light with a wavelength of 700 nm or more and less than 900 nm).

[0035] In Figure 1B, to simplify the distinction between light-emitting and light-receiving devices, the light-emitting region of sub-pixel R is labeled R, the light-emitting region of sub-pixel G is labeled G, the light-emitting region of sub-pixel B is labeled B, the light-receiving region of sub-pixel PS is labeled PS, and the light-receiving region of sub-pixel IRS is labeled IRS.

[0036] In Figure 1B, the light-emitting region and the light-receiving region are shown as rectangles, but the present invention is not limited to this. The shapes of the light-emitting region and the light-receiving region are not particularly limited.

[0037] The area of ​​the light-receiving region of the sub-pixel PS (also simply referred to as the light-receiving area) is preferably smaller than the light-receiving area of ​​the sub-pixel IRS. By reducing the light-receiving area of ​​the sub-pixel PS, i.e., narrowing the imaging range, the sub-pixel PS can perform higher-resolution imaging compared to the sub-pixel IRS. In this case, the sub-pixel PS can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces. The wavelength of light detected by the sub-pixel PS may be appropriately determined depending on the application.

[0038] Sub-pixel IRS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, by detecting infrared light, sub-pixel IRS enables touch detection even in dark places. The wavelength of light detected by sub-pixel IRS may be appropriately determined depending on the application.

[0039] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0040] A display device according to one aspect of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz) to reduce power consumption. In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near touch sensor.

[0041] Depending on the function, the object detection method may be selected based on the difference in detection accuracy between the light-receiving device of the sub-pixel PS and the light-receiving device of the sub-pixel IRS. For example, the scrolling function of the display screen may be implemented using a near-touch sensor function using the sub-pixel IRS, and the input function of the keyboard displayed on the screen may be implemented using a high-resolution touch sensor function using the sub-pixel PS.

[0042] By equipping a single pixel with two types of light-receiving devices, it is possible to add two additional functions in addition to the display function, resulting in a multi-functional display device.

[0043] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, sub-pixels IRS used for touch sensors or near-touch sensors do not require the same high precision as detection using sub-pixels PS, so they may be provided on only some of the pixels of the display device. By reducing the number of sub-pixels IRS in the display device to fewer than the number of sub-pixels PS, the detection speed can be increased.

[0044] Figure 1B shows an example where a single pixel 30 has subpixels arranged in two rows and three columns. Pixel 30 has three subpixels (subpixel G, subpixel B, and subpixel R) in the top row (row 1) and two subpixels (subpixel PS and subpixel IRS) in the bottom row (row 2). In other words, pixel 30 has two subpixels (subpixel G and subpixel PS) in the left column (column 1), subpixel B in the middle column (column 2), subpixel R in the right column (column 3), and subpixel IRS across these two columns. Note that the arrangement of subpixels is not limited to the configuration shown in Figure 1B.

[0045] As shown in Figure 1A, pixel 30 has pixel circuits 21R, 21G, 21B, and 22. Pixel circuit 21R has the function of controlling the light emission of sub-pixel R. Pixel circuit 21G has the function of controlling the light emission of sub-pixel G. Pixel circuit 21B has the function of controlling the light emission of sub-pixel B. Pixel circuit 22 has the function of controlling the light reception of sub-pixel PS and sub-pixel IRS. It can also be said that sub-pixel PS and sub-pixel IRS share pixel circuit 22.

[0046] The pixel circuit 22 is electrically connected to wiring SE, wiring RE, wiring TX, wiring SW, and wiring WX.

[0047] Wiring SE, wiring RE, wiring TX, and wiring SW are each electrically connected to the pixel circuit 22, which is arranged in the row direction (the direction in which the wiring SE extends). Wiring SE, wiring RE, wiring TX, and wiring SW are each electrically connected to the drive circuit unit 14. The drive circuit unit 14 has the function of generating signals to drive the pixel circuit 22 and outputting them to the pixel circuit 22 via wiring SE, wiring RE, wiring TX, and wiring SW. The drive circuit unit 14 has the function of selecting the pixel 30 from which to read the image data. Specifically, by supplying a signal to wiring SE, the pixel 30 from which to read the image data can be selected.

[0048] The wiring WX is electrically connected to the pixel circuits 22, which are arranged in the column direction (the direction in which the wiring WX extends). The wiring WX is also electrically connected to the circuit unit 15. The circuit unit 15 has the function of receiving signals output from the pixel circuits 22 via the wiring WX and outputting them externally as imaging data. The circuit unit 15 functions as a readout circuit. The wiring WX can also be called a readout line.

[0049] In this specification, "imaging data" refers to data corresponding to the amount of light incident on the light-receiving device of the pixel circuit 22. Furthermore, the signal output from the pixel circuit 22 to the circuit unit 15 may also be referred to as imaging data. Additionally, the signal output from the circuit unit 15 to the outside may also be referred to as imaging data.

[0050] Pixel circuit 21R is electrically connected to wiring SLR, wiring GL1, and wiring GL2. Pixel circuit 21G is electrically connected to wiring SLG, wiring GL1, and wiring GL2. Pixel circuit 21B is electrically connected to wiring SLB, wiring GL1, and wiring GL2.

[0051] The SLR, SLG, and SLB wirings are each electrically connected to the pixel circuits 21R, 21G, or 21B, which are arranged in the column direction (the direction in which the SLR wirings extend). The SLR, SLG, and SLB wirings are each electrically connected to the drive circuit unit 12. The drive circuit unit 12 functions as a source line drive circuit (also called a source driver) and supplies data signals (data potentials) to the pixel circuits 21R, 21G, and 21B via the SLR, SLG, and SLB wirings.

[0052] Wiring GL1 and wiring GL2 are electrically connected to pixel circuits 21R, 21G, and 21B, respectively, which are arranged in the row direction (the direction in which wiring GL1 and wiring GL2 extend). Wiring GL1 and wiring GL2 are electrically connected to the drive circuit section 13. The drive circuit section 13 functions as a gate line drive circuit (also called a gate driver) and supplies selection signals to wiring GL1 and wiring GL2.

[0053] As shown in Figure 1A, by arranging pixels 30, including pixel circuits 21R, 21G, 21B, and 22, in a matrix, the display resolution (number of pixels) and the imaging resolution (number of pixels) can be made the same. However, in cases where pixel circuit 22 is used only for touch panel functionality, high resolution may not be necessary. In such cases, a configuration can be used in which pixels 30 including pixel circuit 22 and pixels that do not include pixel circuit 22 (i.e., pixels consisting of pixel circuits 21R, 21G, and 21B) are mixed.

[0054] <Example configuration of pixel circuit 22> An example of a pixel circuit that can be applied to the pixel circuit 22 is shown in Figure 2A.

[0055] The pixel circuit 22 includes transistors M11, M12, M13, M14, M15, capacitor C11, light receiving device PD1, and light receiving device PD2.

[0056] One terminal of the light-receiving device PD1 is electrically connected to either the source or drain of transistor M11. The other terminal of the light-receiving device PD1 is electrically connected to wiring CL. The gate of transistor M11 is electrically connected to wiring TX. One terminal of the light-receiving device PD2 is electrically connected to either the source or drain of transistor M15. The other terminal of the light-receiving device PD2 is electrically connected to wiring CL. The gate of transistor M15 is electrically connected to wiring SW. The other source or drain of transistor M15 is electrically connected to the other source or drain of transistor M11. The other source or drain of transistor M11 is electrically connected to one electrode of capacitor C11. The other electrode of capacitor C11 is electrically connected to wiring VCP. The other source or drain of transistor M11 is electrically connected to either the source or drain of transistor M12. The gate of transistor M12 is electrically connected to wiring RS. The other source or drain of transistor M12 is electrically connected to wiring VRS. The other source or drain of transistor M11 is electrically connected to the gate of transistor M13. One source or drain of transistor M13 is electrically connected to wiring VPI. The other source or drain of transistor M13 is electrically connected to one source or drain of transistor M14. The gate of transistor M14 is electrically connected to wiring SE. The other source or drain of transistor M14 is electrically connected to wiring WX.

[0057] Wiring SE is supplied with a signal to control the conduction / non-conductivity of transistor M14. Wiring RS is supplied with a signal to control the conduction / non-conductivity of transistor M12. Wiring TX is supplied with a signal to control the conduction / non-conductivity of transistor M11. Wiring SW is supplied with a signal to control the conduction / non-conductivity of transistor M15. Wiring VCP is supplied with a constant potential. Wiring VRS is supplied with a constant potential as the reset potential. Wiring VPI is supplied with a constant potential.

[0058] Transistors M11, M12, M14, and M15 function as switches. Transistor M13 functions as an amplifying element (amplifier).

[0059] As shown in Figure 2A, when the cathodes of light-receiving device PD1 and light-receiving device PD2 are electrically connected to the wiring CL, it is preferable that the potential supplied to the wiring VRS is lower than the potential supplied to the wiring CL. On the other hand, when the anodes of light-receiving device PD1 and light-receiving device PD2 are electrically connected to the wiring CL, it is preferable that the potential supplied to the wiring VRS is higher than the potential supplied to the wiring CL.

[0060] A light-receiving device PD1 can be a light-receiving device that has the function of receiving visible light, and a light-receiving device PD2 can be a light-receiving device that has the function of receiving infrared light. Alternatively, a light-receiving device PD1 can be a light-receiving device that has the function of receiving infrared light, and a light-receiving device PD2 can be a light-receiving device that has the function of receiving visible light.

[0061] In a display device according to one aspect of the present invention, the pixel circuit 22 has a function to control the reception of light by a sub-pixel PS and a function to control the reception of light by a sub-pixel IRS. Compared to the case in which a pixel circuit having the function to control the reception of light by a sub-pixel PS and a pixel circuit having the function to control the reception of light by a sub-pixel IRS are provided separately, the pixel circuit 22 can reduce the number of transistors and wiring, and the size of the pixels can be reduced, thus enabling a high-resolution display device.

[0062] In one embodiment of the present invention, it is preferable that all transistors included in the pixel circuit 22 are transistors having a metal oxide (hereinafter also referred to as an oxide semiconductor) in the semiconductor layer where the channel is formed (hereinafter also referred to as an OS transistor). OS transistors have an extremely small off-current and can retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Furthermore, by using OS transistors, the power consumption of the display device can be reduced.

[0063] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use transistors having silicon in the semiconductor layer where the channel is formed (hereinafter also referred to as Si transistors) for all transistors included in the pixel circuit. Examples of silicon include single-crystal silicon, polycrystalline silicon, amorphous silicon, etc. In particular, it is preferable to use transistors having low-temperature polysilicon (LTPS) in the semiconductor layer (hereinafter also referred to as LTPS transistors). LTPS transistors have high field-effect mobility and can operate at high speeds.

[0064] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use two types of transistors in the pixel circuit. Specifically, it is preferable that the pixel circuit has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the function required of the transistor, the quality of the pixel circuit can be improved and the accuracy of sensing or imaging can be increased.

[0065] For example, it is preferable to apply LTPS transistors using low-temperature polysilicon in the semiconductor layer to all of transistors M11 to M15. Alternatively, it is preferable to apply OS transistors using metal oxide in the semiconductor layer to transistors M11, M12, and M15, and apply an LTPS transistor to transistor M13. In this case, either an OS transistor or an LTPS transistor may be applied to transistor M14.

[0066] By applying OS transistors to transistors M11, M12, and M15, it is possible to prevent the potential held at the gate of transistor M13, based on the charge generated in photodetectors PD1 and PD2, from leaking through transistors M11, M12, or M15.

[0067] On the other hand, it is preferable to use an LTPS transistor for transistor M13. LTPS transistors can achieve higher field-effect mobility than OS transistors and have superior driving capability and current capability. Therefore, transistor M13 can operate at a faster speed compared to transistors M11, M12, and M15. By using an LTPS transistor for transistor M13, an output corresponding to a minute potential based on the amount of light received by photodetector PD1 or photodetector PD2 can be quickly provided to transistor M14.

[0068] In other words, in the pixel circuit 22 shown in Figure 2A, transistors M11, M12, and M15 have low leakage current, and transistor M13 has high driving capability. As a result, the charge received by photodetectors PD1 and PD2 and transferred via transistors M11 and M15 can be held without leakage, and high-speed readout can be performed.

[0069] Since transistor M14 functions as a switch that directs the output from transistor M13 to wiring WX, it does not necessarily require a small off-current or high-speed operation like transistors M11 through M13 and transistor M15. Therefore, the semiconductor layer of transistor M14 may be made of low-temperature polysilicon or an oxide semiconductor.

[0070] Note that in Figure 2A, the transistor is shown as an n-channel transistor, but a p-channel transistor can also be used.

[0071] As mentioned above, when high-resolution and clear imaging is required, such as for personal authentication, it is preferable to have a small aperture ratio (light-receiving area) for the light-receiving device. On the other hand, when it is sufficient to detect an approximate position, such as for a near-touch sensor, it is preferable to have a large aperture ratio (light-receiving area) for the light-receiving device. Therefore, it is preferable to configure the aperture ratio (light-receiving area) of light-receiving device PD1 to be smaller than that of light-receiving device PD2. Furthermore, when imaging that requires high resolution, it is preferable to turn on transistor M11 and turn off transistor M15 to perform imaging using only light-receiving device PD1. On the other hand, when performing detection over a large area, it is preferable to turn on both transistor M11 and transistor M15 to perform imaging using both light-receiving devices PD1 and PD2. This increases the amount of light that can be captured, making it easier to detect objects located far from the display device.

[0072] As described above, the display device of this embodiment can be made into a multi-functional display device by equipping a single pixel with two types of light-receiving devices, thereby adding two functions in addition to the display function. For example, it can realize a high-definition imaging function and a sensing function such as a touch sensor or near-touch sensor. Furthermore, the functions of the display device can be further increased by combining a pixel equipped with two types of light-receiving devices with a pixel with a different configuration. For example, a pixel having a light-emitting device that emits infrared light, or various sensor devices, can be used.

[0073] <Example configuration of pixel circuit 21> Figure 2B shows examples of pixel circuits that can be applied to pixel circuits 21R, 21G, and 21B. The pixel circuit 21 shown in Figure 2B has transistors M1, M2, M3, M4, capacitors C1, C2, and a light-emitting device EL.

[0074] Transistor M1 has its gate electrically connected to wiring GL1, one of its source and drain electrically connected to wiring SL, and the other of its source and drain electrically connected to one electrode of capacitor C1, one electrode of capacitor C2, and the gate of transistor M2. Transistor M2 has one of its source and drain electrically connected to wiring AL, and the other of its source and drain electrically connected to one electrode of light-emitting device EL, the other electrode of capacitor C1, and one of its source and drain. Transistor M3 has its gate electrically connected to wiring GL1, and the other of its source and drain electrically connected to the other electrode of capacitor C2. Transistor M4 has its gate electrically connected to wiring GL2, one of its source and drain electrically connected to the other electrode of capacitor C2, and the other of its source and drain electrically connected to wiring V0L. Light-emitting device EL has its other electrode electrically connected to wiring CL.

[0075] Transistors M1, M3, and M4 function as switches. Transistor M2 functions as a transistor to control the current flowing through the light-emitting device EL.

[0076] Here, it is preferable to apply LTPS transistors to all of transistors M1 through M4. Alternatively, it is preferable to apply OS transistors to transistors M1, M3, and M4, and an LTPS transistor to transistor M2.

[0077] A data potential is supplied to wiring SL. Selection signals are supplied to wiring GL1 and wiring GL2, respectively. These selection signals include the potentials that make the transistor conduct and the potentials that make it non-conductive. A constant potential is supplied to wiring AL. A constant potential is supplied to wiring CL.

[0078] As shown in Figure 2B, when the cathode of the light-emitting device EL is electrically connected to the wiring CL, it is preferable that the potential supplied to the wiring AL is higher than the potential supplied to the wiring CL. On the other hand, when the anode of the light-emitting device EL is electrically connected to the wiring CL, it is preferable that the potential supplied to the wiring AL is lower than the potential supplied to the wiring CL.

[0079] Note that the pixel circuits that can be applied to pixel circuits 21R, 21G, and 21B are not limited to the pixel circuit 21 shown in Figure 2B.

[0080] <Example of a 30-pixel configuration> Figure 3 shows an example of a circuit diagram for a pixel 30 having pixel circuits 22, 21R, 21G, and 21B.

[0081] Pixel circuit 21R has a light-emitting device ELR that emits red light. Pixel circuit 21G has a light-emitting device ELG that emits green light. Pixel circuit 21B has a light-emitting device ELB that emits blue light. Pixel circuits 21R, 21G, and 21B have the same configuration except for the light-emitting devices.

[0082] Figure 3 shows a configuration in which one electrode of the light-receiving device PD1, one electrode of the light-receiving device PD2, one electrode of the light-emitting device ELR, one electrode of the light-emitting device ELG, and one electrode of the light-emitting device ELB are each electrically connected to the wiring CL. This configuration reduces the number of wirings that the pixel 30 has, allowing the size of the pixel 30 to be reduced, thus enabling a high-resolution display device. Alternatively, one electrode of the light-receiving device PD1, one electrode of the light-receiving device PD2, one electrode of the light-emitting device ELR, one electrode of the light-emitting device ELG, and one electrode of the light-emitting device ELB may each be connected to different wirings.

[0083] Note that the configurations of pixel circuits 21R, 21G, and 21B are not limited to those shown in Figure 3.

[0084] <Example of readout circuit configuration> An example of a circuit that can be used as a readout circuit is shown in Figure 4A. The circuit 50 shown in Figure 4A can be applied to the circuit section 15 shown in Figure 1A.

[0085] A block diagram of circuit 50 is shown in Figure 4A. Circuit 50 has multiple circuits 51, multiple circuits 52, circuit 53, circuit 54, and circuit 55.

[0086] Circuit 50 receives signals from the K-th to K+p-th wiring WX[K:K+p] (where K is an integer between 1 and N). One circuit 50 can receive signals from a number of wirings WX equal to the number of pixels 30 arranged in the row direction, N (where N is an integer greater than or equal to 2), divided by an arbitrary integer x. That is, p is an integer satisfying N / x-1, and circuit 50 receives signals from N / x wirings WX. In this case, the display device can be configured to have x circuits 50 as readout circuits. If N is not a multiple of x, the number of wirings WX connected to one circuit 50 can be adjusted accordingly.

[0087] Circuit 51 is a circuit that converts the current output to one of the wires WX into a voltage and outputs it. Circuit 51 can use the transistor M13 of the pixel circuit 22 described above and the circuit that constitutes the source follower circuit.

[0088] Circuit 52 can suitably utilize a Correlated Double Sampling (CDS) circuit. Circuit 52 can generate a signal with reduced noise.

[0089] Circuit 53 can utilize a multiplexer circuit. Circuit 53 can convert parallel signals input from multiple circuits 52 into serial signals and output them to circuit 54.

[0090] Circuit 54 can utilize a source follower circuit. Circuit 54 has the function of amplifying and outputting the signal input from circuit 53.

[0091] Circuit 55 can use an analog-to-digital conversion circuit. Circuit 55 converts the analog signal input from circuit 54 into a digital signal S. OUT It has a function to convert and output in a specific format.

[0092] A more specific example of the circuit diagram of circuit 50 is shown in Figure 4B. Figure 4B shows circuits 51[j] and 52[j] connected to the j-th wiring WX[j], a part of circuit 53, circuits 54, 55, and 56. For circuit 53, a part of the configuration connected to circuit 52[j] is shown as circuit 53[j]. Circuit 53 has multiple circuits 53[j].

[0093] Circuit 51[j] has transistors 61 and 62. Circuit 51[j] is also connected to wiring IVB and wiring VIV, which supply constant potentials to each other. Transistor 62 forms a source follower circuit with transistor M13 of pixel circuit 22. Transistor 61 functions as a constant current source. Transistors 61 and 62 form a current mirror.

[0094] Circuit 52[j] includes transistors 63 to 68, capacitors 81 and 82. Circuit 52[j] is connected to wirings SEL1, SEL2, and SCL, to which signals controlling the conduction state of the transistors are supplied, and to wirings VCL, CDB, VDD1, and VSS1, to which a constant potential is supplied. For example, a high potential can be supplied to wirings VCL, VDD1, and CDB, and a low potential can be supplied to wiring VSS1.

[0095] A source follower circuit is formed by transistors 66 and 68. Transistor 67 functions as a constant current source and forms a current mirror with transistor 68. Capacitor 81 is provided between the gate of transistor 66 and the output wiring of circuit 51[j]. The signal supplied from circuit 51[j] to circuit 52[j] is transmitted to the gate of transistor 66 via capacitor 81.

[0096] Transistor 65 has the function of supplying a constant potential (also called an initial potential) to node SH, to which the gate of transistor 66 is connected. First, with an initial potential supplied to node SH from wiring VCL, the potential of wiring WX[j] is obtained. Then, transistor 65 is made non-conductive, and transistor M12 of the pixel circuit 22 is made conductive, and the potential of wiring WX[j] is obtained. As a result, the potential corresponding to the difference from the initial potential can be read out as imaging data. By performing this correlated double sampling operation, the circuit 50 can output a signal with reduced noise.

[0097] Transistor 63 has the function of adjusting the capacitance value of the CDS circuit. By making transistor 63 conductive, capacitors 81 and 82 are connected in parallel. This improves the sensitivity of the CDS circuit. On the other hand, by making transistor 63 non-conductive, the readout operation can be made faster. For example, when imaging an object with low contrast or brightness, sensitivity can be improved by making transistor 63 conductive and increasing the capacitance value of the CDS circuit. On the other hand, when high-speed readout is required, the capacitance value of the CDS circuit can be decreased by making transistor 63 non-conductive. These can be switched by a signal applied to wiring SEL1.

[0098] Transistor 64 has the function of making wiring WX[j] and node SH conductive. By making transistor 64 conductive, a readout operation without correlated double sampling can be performed. These can be switched by the signal applied to wiring SEL2.

[0099] Circuit 53[j] includes a transistor 69, a capacitor 83, and a capacitor 84. Circuit 53[j] is also connected to wiring SEL3, which is supplied with a signal to control the conduction state of the transistor, and wiring VDD2, which is supplied with a constant potential. Capacitors 83 and 84 have the function of maintaining the potential of the wiring. Either or both of capacitors 83 and 84 may be omitted if they are not needed.

[0100] When circuit 53[j] is selected from among the circuits 53, transistor 69 is made conductive. This allows the signal output from circuit 52[j] to be output to circuit 54 via transistor 69. By sequentially selecting the multiple transistors 69 in circuit 53, parallel signals input from multiple circuits 52 can be converted into serial signals and output to circuit 54.

[0101] Circuit 54 has transistors 71 through 74. Circuit 54 is also connected to wiring SFR, which is supplied with a signal to control the conduction state of the transistors, and wiring VRSF, SFB, VDD3, and VSS3, which are supplied with a constant potential.

[0102] Transistors 72 and 74 form a source follower circuit. Transistor 73 functions as a constant current source and forms a current mirror with transistor 74.

[0103] Transistor 71 has the function of resetting the potential of the node to which the gate of transistor 72 is connected, using the potential supplied to the wiring VRSF.

[0104] As shown in Figure 4B, a circuit 56 that functions as an amplification circuit may be provided between circuit 54 and circuit 55. Circuit 56 has the function of amplifying the signal input from circuit 54 and outputting it to circuit 55.

[0105] This example shows a case where n-channel transistors are used for all the transistors constituting circuits 51, 52, 53, and 54. In this case, it is preferable to use transistors in which an oxide semiconductor is applied to the semiconductor layer where the channel is formed. In particular, it is preferable to use transistors with extremely low off-currents for transistors 63, 64, 65, 69, and 71, which function as switches. However, this is not limited to this, and some or all of the transistors may be silicon-based transistors. Also, some or all of the transistors may be p-channel transistors.

[0106] Figure 4B shows an example in which all transistors constituting circuits 51, 52, 53, and 54 are transistors with a pair of electrically connected gates. However, this is not limited to this, and some or all of the transistors may be transistors with a single gate. Alternatively, some or all of the transistors may be transistors in which one gate is electrically connected to either the source or the drain. Furthermore, some or all of the transistors may be transistors to which a constant potential or signal is supplied to one gate to control the threshold voltage.

[0107] Circuits 51, 52, 53, and 54 are preferably formed on the substrate on which the pixels are provided, using the same process as the pixels. This reduces the number of components in the display device, thereby lowering costs. In addition, one or both of circuits 56 and 55 may use IC chips, or one or both of circuits 56 and 55 may be formed on the substrate on which the pixels are provided.

[0108] The above is a description of an example of the readout circuit configuration.

[0109] Note that the circuits that can be applied to circuit section 15 are not limited to the configurations shown in Figures 4A and 4B.

[0110] Furthermore, a back gate may be provided to the transistor in a display device according to one aspect of the present invention. By supplying the same potential to the back gate as to the front gate, the on-current of the transistor can be increased. In addition, by supplying a constant potential to the back gate, the threshold voltage of the transistor can be adjusted.

[0111] <Example of display unit configuration 1> An example of the configuration of the display unit 11 is shown in Figures 5 and 6. The display unit 11 has a configuration in which pixels 30 are arranged in a matrix of M rows and N columns (where M and N are independent integers of 2 or more). Figures 5 and 6 show four pixels 30 from the i-th row and j-th column (where i and j are independent integers of 1 or more) to the i+1-th row and j+1-th column.

[0112] In this specification, when the same code is used for multiple elements, and especially when it is necessary to distinguish them, the code may be accompanied by an identifying code such as "[1]", "[m]", "[1,1]", or "[m,n]". For example, pixel 30 in row i and column j may be written as pixel 30[i,j].

[0113] Figure 5 shows the arrangement of sub-pixels R, G, B, PS, and IRS. Figure 6 shows the connection relationships of pixel circuits 21R, 21G, 21B, 22, and each wiring.

[0114] Wiring SE[i], RE[i], TX[i], and SW[i] are each electrically connected to pixel circuits 22[i,j] and 22[i,j+1] arranged in the i-row direction. Wiring SE[i+1], RE[i+1], TX[i+1], and SW[i+1] are each electrically connected to pixel circuits 22[i+1,j] and 22[i+1,j+1] arranged in the i+1-row direction.

[0115] Wiring WX[j] is electrically connected to pixel circuits 22[i,j] and 22[i+1,j] arranged in the j-column direction. Wiring WX[j+1] is electrically connected to pixel circuits 22[i,j+1] and 22[i+1,j+1] arranged in the j+1-column direction.

[0116] Wiring GL1[i] and wiring GL2[i] are electrically connected to pixel circuits 21R[i,j], 21G[i,j], 21B[i,j], 21R[i,j+1], 21G[i,j+1], and 21B[i,j+1], respectively, which are arranged in the i-row direction. Wiring GL1[i+1] and wiring GL2[i+1] are electrically connected to pixel circuits 21R[i+1,j], 21G[i+1,j], 21B[i+1,j], 21R[i+1,j+1], 21G[i+1,j+1], and 21B[i+1,j+1], respectively, which are arranged in the i+1-row direction.

[0117] Wiring SLR[j] is electrically connected to pixel circuits 21R[i,j] and 21R[i+1,j] arranged in the j-column direction. Wiring SLG[j] is electrically connected to pixel circuits 21G[i,j] and 21G[i+1,j] arranged in the j-column direction. Wiring SLB[j] is electrically connected to pixel circuits 21B[i,j] and 21B[i+1,j] arranged in the j-column direction. Wiring SLR[j+1] is electrically connected to pixel circuits 21R[i,j+1] and 21R[i+1,j+1] arranged in the j+1-column direction. Wiring SLG[j+1] is electrically connected to pixel circuits 21G[i,j+1] and 21G[i+1,j+1] arranged in the j+1-column direction. The wiring SLB[j+1] is electrically connected to the pixel circuits 21B[i,j+1] and 21B[i+1,j+1] arranged in the j+1 column direction.

[0118] <Example of driving method> An example of a method for driving the pixel circuit 22 will be explained using the configuration shown in Figure 7. Here, an example using the configuration shown in Figure 4B as the circuit 50 is given. Figure 7 shows the pixel circuit 22[i,j], the pixel circuit 22[i+1,j], and the circuit 52[j] which functions as a CDS circuit.

[0119] The timing charts related to the operation of the pixel circuit 22 are shown in Figures 8A, 8B, and 9. Figures 8A, 8B, and 9 show the signals input to wiring TX, wiring SW, wiring SE[i] in row i, wiring RS[i] in row i, wiring SE[i+1] in row i+1, wiring RS[i+1] in row i+1, and wiring SCL.

[0120] First, an example of the exposure operation of a sub-pixel PS, which has the function of receiving visible light, will be explained using Figure 8A. Here, exposure refers to the acquisition of imaging data.

[0121] <Before time T11> Before time T11, a low-level potential is applied to wiring TX, wiring SW, wiring SE, and wiring RS.

[0122] <Period T11-T12> The period from time T11 to time T12 corresponds to the initialization period (also called the reset period). At time T11, a potential that causes the transistors to conduct (here, a high-level potential) is applied to wiring TX and wiring RS, respectively. A potential that causes the transistors to deconduct (here, a low-level potential) is applied to wiring SW and wiring SE, respectively. As a result, transistors M11 and M12 become conductive.

[0123] When transistors M11 and M12 become conductive, the charge stored in capacitor C11 is initialized (reset). Furthermore, a potential lower than that of the cathode electrode is applied to the anode electrode of the photodetector PD1 via transistors M11 and M12 from the wiring VRS. In other words, a reverse bias voltage is applied to the photodetector PD1.

[0124] <Period T12-T13> The period from time T12 to time T13 corresponds to the exposure period (the period during which imaging data is acquired). At time T12, a low-level potential is applied to wiring TX and wiring RS. As a result, transistors M11 and M12 become non-conductive.

[0125] Since transistor M11 is in a non-conductive state, the photodetector PD1 is maintained with a reverse bias voltage applied. At this point, photoelectric conversion occurs due to the light (visible light in this case) incident on the photodetector PD1, and charge accumulates on the anode electrode of the photodetector PD1.

[0126] The length of the exposure period can be set according to the sensitivity of the photodetector PD1, the amount of incident light, etc., but it is preferable to set a period that is at least sufficiently longer than the initialization period.

[0127] <Period T13-T14> The period from time T13 to time T14 corresponds to the transfer period. At time T13, a high-level potential is applied to the wiring TX. This causes transistor M11 to conduct, and the charge accumulated in the photodetector PD1 is transferred to one electrode of capacitor C11 via transistor M11. As a result, the potential of the node to which one electrode of capacitor C11 is connected rises in proportion to the amount of charge accumulated in the photodetector PD1. Consequently, the gate of transistor M13 is given a potential corresponding to the exposure amount of the photodetector PD1.

[0128] <From time T14 onwards> At time T14, a low potential is applied to wiring TX. This causes transistor M11 to become non-conductive, and the node to which the gate of transistor M13 is connected becomes floating. Since exposure of the photodetector PD1 is always occurring, by making transistor M11 non-conductive after the transfer operation in period T13-T14 is completed, it is possible to prevent a change in the potential of the node to which the gate of transistor M13 is connected.

[0129] The above is an explanation of an example of the operation related to exposure of a sub-pixel PS that has the function of receiving visible light.

[0130] Next, an example of the exposure operation of a sub-pixel IRS, which has the function of receiving infrared light, will be explained using Figure 8B.

[0131] <Before time T21> Before time T21, a low-level potential is applied to wiring TX, wiring SW, wiring SE, and wiring RS.

[0132] <Period T21-T22> The period from time T21 to time T22 corresponds to the initialization period (also called the reset period). At time T21, a high-level potential is applied to wiring SW and wiring RS, respectively. A low-level potential is applied to wiring TX and wiring SE, respectively. As a result, transistors M15 and M12 become conductive.

[0133] When transistors M15 and M12 become conductive, the charge stored in capacitor C11 is initialized (reset). Furthermore, a potential lower than that of the cathode electrode is applied to the anode electrode of the photodetector PD2 via transistors M15 and M12 from the wiring VRS. In other words, a reverse bias voltage is applied to the photodetector PD2.

[0134] <Period T22-T23> The period from time T22 to time T23 corresponds to the exposure period. At time T22, a low-level potential is applied to wiring SW and wiring RS. As a result, transistors M15 and M12 become non-conductive.

[0135] Since transistor M15 is in a non-conductive state, the photodetector PD2 is maintained with a reverse bias voltage applied. At this point, photoelectric conversion occurs due to the light (infrared light in this case) incident on the photodetector PD2, and charge accumulates on the anode electrode of the photodetector PD2.

[0136] The length of the exposure period can be set according to the sensitivity of the photodetector PD2, the amount of incident light, etc., but it is preferable to set a period that is at least sufficiently longer than the initialization period.

[0137] <Period T23-T24> The period from time T23 to time T24 corresponds to the transfer period. At time T23, a high-level potential is applied to the wiring SW. This causes transistor M15 to conduct, and the charge accumulated in the photodetector PD2 is transferred to one electrode of capacitor C11 via transistor M15. As a result, the potential of the node to which one electrode of capacitor C11 is connected rises in proportion to the amount of charge accumulated in the photodetector PD2. Consequently, the gate of transistor M13 is given a potential corresponding to the exposure amount of the photodetector PD2.

[0138] <From time T24 onwards> At time T24, a low potential is applied to the wiring SW. This causes transistor M15 to become non-conductive, and the node to which the gate of transistor M13 is connected becomes floating. Since exposure of the photodetector PD2 is constantly occurring, making transistor M15 non-conductive after the transfer operation in period T23-T24 is completed prevents a change in the potential of the node to which the gate of transistor M13 is connected.

[0139] The above is an explanation of an example of the operation related to exposure of a sub-pixel IRS that has the function of receiving infrared light.

[0140] Next, an example of the operation related to the reading of sub-pixel PS and sub-pixel IRS will be explained using Figure 9. Period T31-T41 shows the reading of the i-th row of pixel circuit 22, and period T41-T51 shows the reading of the i+1-th row of pixel circuit 22.

[0141] <Before time T31> Before time T31, a low-level potential is applied to wiring TX, wiring SW, wiring SE, wiring RS, and wiring SCL.

[0142] <Period T31-T34> The period from time T31 to time T34 corresponds to the correlated double sampling (CDS) processing period.

[0143] At time T31, high-level potentials are applied to wiring SE[i] and wiring SCL, respectively. Low-level potentials are applied to wiring TX and wiring RS[i], respectively. As a result, transistor M14 of pixel circuit 22[i,j] and transistor 65 of circuit 52[j] become conductive.

[0144] When transistor 65 becomes conductive, the potential of node SH, which is electrically connected to the gate of transistor 66, becomes the potential (initial potential) supplied to wiring VCL. Also, when transistor M14 of pixel circuit 22[i,j] becomes conductive, imaging data is output from pixel circuit 22[i,j], and a potential corresponding to the imaging data is supplied to one electrode of capacitor 81.

[0145] At time T32, a low potential is applied to wiring SCL. As a result, transistor 65 becomes non-conductive.

[0146] As transistor 65 becomes non-conductive, the potential of one electrode of capacitor 81 is maintained at a potential corresponding to the imaging data output from pixel circuit 22[i,j]. At this time, due to feedthrough, the potential of node SH becomes lower than the potential supplied to wiring VCL (initial potential).

[0147] At time T33, a high-level potential is applied to wiring RS[i]. As a result, transistor M12 of pixel circuit 22[i,j] becomes conductive.

[0148] When transistor M12 becomes conductive, the potential supplied to wiring VRS (reset potential) is supplied to circuit 52[j] via wiring WX[j].

[0149] This allows the potential equivalent to the difference from the initial potential to be read out as imaging data. By performing this correlated double sampling operation, a noise-reduced signal can be output from circuit 52[j].

[0150] <Period T34-T41> The period from time T34 to time T41 corresponds to the output period.

[0151] At time T34, a low-level potential is applied to wiring RS[i]. This causes transistor M12 of pixel circuit 22[i,j] to become non-conductive. A potential corresponding to the imaging data is output from circuit 52[j] to circuit 53[j].

[0152] This completes the operation related to reading out the pixel circuit 22 in row i.

[0153] Next, the pixel circuit 22 in row i+1 is read out. The same operation as described above for period T31-T41 is performed on the pixel circuit 22 in row i+1.

[0154] <Period T41-T44> The period from time T41 to time T44 corresponds to the correlated double sampling (CDS) processing period.

[0155] At time T41, a high-level potential is applied to wiring SE[i+1] and wiring SCL, respectively. A low-level potential is applied to wiring TX and wiring RS[i+1], respectively. As a result, transistor M14 of pixel circuit 22[i+1,j] and transistor 65 of circuit 52[j] become conductive.

[0156] When transistor 65 becomes conductive, the potential of node SH, which is electrically connected to the gate of transistor 66, becomes the potential (initial potential) supplied to wiring VCL. Also, when transistor M14 of pixel circuit 22[i+1,j] becomes conductive, imaging data is output from pixel circuit 22[i+1,j], and a potential corresponding to the imaging data is supplied to one electrode of capacitor 81.

[0157] At time T42, a low potential is applied to wiring SCL. As a result, transistor 65 becomes non-conductive.

[0158] As transistor 65 becomes non-conductive, the potential of one electrode of capacitor 81 is maintained at a potential corresponding to the imaging data output from pixel circuit 22[i+1,j]. At this time, due to feedthrough, the potential of node SH becomes lower than the potential supplied to wiring VCL (initial potential).

[0159] At time T43, a high-level potential is applied to wiring RS[i+1]. As a result, transistor M12 of pixel circuit 22[i+1,j] becomes conductive.

[0160] When transistor M12 becomes conductive, the potential supplied to wiring VRS (reset potential) is supplied to circuit 52[j] via wiring WX[j].

[0161] This allows the potential equivalent to the difference from the initial potential to be read out as imaging data. By performing this correlated double sampling operation, a noise-reduced signal can be output from circuit 52[j].

[0162] <Period T44-T51> The period from time T44 to time T51 corresponds to the output period.

[0163] At time T44, a low-level potential is applied to wiring RS[i+1]. This causes transistor M12 in pixel circuit 22[i+1,j] to become non-conductive. A potential corresponding to the imaging data is output from circuit 52[j] to circuit 53[j].

[0164] <From time T51 onwards> At time T51, a low-level potential is applied to wiring SE[i+1]. This causes transistor M14 to become non-conductive. As a result, the reading of the data from the i+1th row of pixel circuit 22 is completed. From time T51 onward, the data reading operation for subsequent rows is performed sequentially.

[0165] The reading operation is performed sequentially from row 1 to row M. M data potentials will be output sequentially to wiring WX.

[0166] By using the driving method illustrated in Figures 8A, 8B, and 9, the exposure period and the readout period can be set separately, allowing all pixel circuits 22 in the display unit 11 to be exposed simultaneously, and then the data to be read out sequentially. This enables so-called global shutter driving. When performing global shutter driving, it is preferable to use transistors made of oxide semiconductors that have extremely low leakage current in the non-conductive state for the transistors that function as switches in the pixel circuit 22 (particularly transistors M11, M12, and M15).

[0167] In the above example, data is read from all M×N pixel circuits 22. However, there are cases where high resolution is not necessary, such as when operating as a touch panel, i.e., when detecting the position information of an object. In such cases, less data can be read by downsampling the rows, columns, or rows and columns from which data is read. This reduces the time required for reading and enables a higher frame rate. For example, the reading period can be halved by reading only odd or even rows. Furthermore, it is preferable to have a configuration that allows switching the reading method between when capturing high-resolution images (e.g., image scanning) and when performing touch sensing.

[0168] The above is an explanation of an example of a method for driving the pixel circuit 22.

[0169] <Example of display unit configuration 2> Figures 10 and 11 show examples of display units 11 different from those shown in Figures 5 and 6.

[0170] The display unit 11A shown in Figures 10 and 11 differs from the display unit 11 shown in Figures 5 and 6 in that pixel circuits 22 are provided every two rows of pixels 30. In the display unit 11A, it can be said that two adjacent pixels 30 in the column direction share one pixel circuit 22. Specifically, one pixel circuit 22[k,j] is provided for pixels 30[i,j] and pixels 30[i+1,j], and one pixel circuit 22[k,j+1] is provided for pixels 30[i,j+1] and pixels 30[i+1,j+1]. Here, k is an integer between 1 and M / 2. In the display unit 11A, two adjacent pixels 30 in the column direction have one sub-pixel PS and one sub-pixel IRS.

[0171] Wiring SE, wiring RE, wiring TX, and wiring SW are provided every other row of pixel 30. Figure 11 shows an example in which wiring SE[k], wiring RE[k], wiring TX[k], and wiring SW[k] are provided for pixel 30 in row i and pixel 30 in row i+1. Wiring SE[k], wiring RE[k], wiring TX[k], and wiring SW[k] are electrically connected to pixel circuit 22[k,j] and pixel circuit 22[k,j+1], respectively.

[0172] Figure 10 shows an example in which a sub-pixel PS is provided at pixel 30 in row i, and a sub-pixel IRS is provided at pixel 30 in row i+1. Note that the arrangement of sub-pixels PS and IRS is not limited to the configuration shown in Figure 10.

[0173] As shown in Figure 12A, the sub-pixels PS and IRS may be arranged alternately in the display unit 11B.

[0174] As shown in Figure 12B, the display unit 11C may have sub-pixels PS instead of sub-pixels IRS. In other words, one pixel circuit 22 can have two light-receiving devices that have the function of receiving visible light. In this case, one pixel circuit 22 has the function of controlling the light reception of the two sub-pixels PS.

[0175] As shown in Figure 13A, the display unit 11D may have sub-pixels IRS instead of sub-pixels PS. In other words, one pixel circuit 22 can have two light-receiving devices that have the function of receiving infrared light. In this case, one pixel circuit 22 has the function of controlling the light reception of the two sub-pixels IRS.

[0176] Figures 10 and 12A show a configuration in which sub-pixels PS and sub-pixels IRS are arranged in the row direction, but the present invention is not limited to this. Sub-pixels PS and sub-pixels IRS may also be arranged in the column direction, as shown in the display unit 11E in Figure 13B.

[0177] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0178] (Embodiment 2) In this embodiment, an electronic device having a display device according to one aspect of the present invention will be described with reference to the figures.

[0179] The display device shown in Embodiment 1 can be applied to an electronic device according to one aspect of the present invention. An example of pixels in the display device according to one aspect of the present invention is shown in Figure 14A. An example of a cross-sectional view of an electronic device having the display device according to one aspect of the present invention is shown in Figures 14B and 14C.

[0180] Pixel 180A, shown in Figure 14A, has sub-pixels G, B, R, PS, and IRS. Since the description of pixel 180A can be found in the previous section concerning pixel 30, a detailed explanation is omitted.

[0181] The electronic devices shown in Figures 14B and 14C each have a display device 100 and a light source 104 between the housing 103 and the protective member 105. The display device 100 can be the display device 10 shown in Embodiment 1.

[0182] The light source 104 has a light-emitting device that emits infrared light 31IR. Preferably, the light source 104 is a light-emitting diode (LED).

[0183] Figure 14B shows an example where the light source 104 is positioned so as not to overlap with the display device 100. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the protective member 105.

[0184] Figure 14C shows an example in which the display device and the light source 104 are installed in a stacked configuration. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the display device 100 and the protective member 105.

[0185] Figures 14B and 14C show the cross-sectional structure between the dashed line A1 and A2 in Figure 14A. The display device 100 has multiple light-emitting devices and multiple light-receiving devices between the substrate 106 and the substrate 102.

[0186] Sub-pixel R has a light-emitting device 130R that emits red light 31R. Sub-pixel G has a light-emitting device 130G that emits green light 31G. Sub-pixel B has a light-emitting device 130B that emits blue light 31B.

[0187] Sub-pixel PS has a light-receiving device 150PS, and sub-pixel IRS has a light-receiving device 150IRS.

[0188] As shown in Figures 14B and 14C, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light receiving device 150IRS.

[0189] In this embodiment, an example is shown in which an object is detected using infrared light 31IR, but the wavelength of light detected by the light receiving device 150IRS is not particularly limited. It is preferable that the light receiving device 150IRS detects infrared light. Alternatively, the light receiving device 150IRS may detect visible light, or it may detect both infrared and visible light.

[0190] In touch sensors or near-touch sensors, object detection can sometimes be made easier by increasing the light-receiving area of ​​the light-receiving device. Therefore, as shown in Figure 15A, object 108 may be detected using both light-receiving device 150PS and light-receiving device 150IRS.

[0191] In Figure 15A, similar to Figures 14B and 14C, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Furthermore, in Figure 15A, the green light 31G emitted by the light-emitting device 130G is also reflected by the object 108, and the reflected light 32G from the object 108 is incident on the light receiving device 150PS. Although the object 108 is not in contact with the electronic equipment, the object 108 can be detected using the light receiving devices 150IRS and 150PS.

[0192] Furthermore, the light-receiving device 150IRS (and the light-receiving device 150PS) can also be used to detect the object 108 that is in contact with the electronic device.

[0193] The light-receiving area of ​​the sub-pixel PS is smaller than that of the sub-pixel IRS. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS allows for higher-definition or higher-resolution imaging compared to using sub-pixel IRS. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0194] For example, as shown in Figure 15B, the green light 31G emitted by the light-emitting device 130G is reflected by the object 108, and the reflected light 32G from the object 108 is incident on the light-receiving device 150PS. The fingerprint of the object 108 can be imaged using the light-receiving device 150PS.

[0195] In this embodiment, an example is shown in which the light-receiving device 150PS detects an object using green light 31G emitted by the light-emitting device 130G. However, the wavelength of light detected by the light-receiving device 150PS is not particularly limited. The light-receiving device 150PS preferably detects visible light, and preferably detects one or more colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. The light-receiving device 150PS may also detect infrared light.

[0196] For example, the light-receiving device 150PS may have the function of detecting the red light 31R emitted by the light-emitting device 130R. Alternatively, the light-receiving device 150PS may have the function of detecting the blue light 31B emitted by the light-emitting device 130B.

[0197] Furthermore, it is preferable that the light-emitting device that emits light detected by the light-receiving device 150PS is located in a sub-pixel that is close in position to the sub-pixel PS within the pixel. For example, in pixel 180A, the light-receiving device 150PS detects the light emitted by the light-emitting device 130G of the sub-pixel G adjacent to the sub-pixel PS. This configuration can improve detection accuracy.

[0198] In one aspect of the present invention, the display device may have the above-described configuration of pixel 180A applied to all pixels, or the configuration of pixel 180A may be applied to some pixels and other configurations may be applied to other pixels.

[0199] For example, a display device according to one aspect of the present invention may have both the pixel 180A shown in Figure 16A and the pixel 180B shown in Figure 16B. Since the pixel 180A shown in Figure 16A has the same configuration as the pixel 30 shown in Figure 1B, a detailed explanation is omitted.

[0200] Pixel 180B, shown in Figure 16B, has sub-pixels G, B, R, PS, and X.

[0201] Various functions can be realized in a display device, or in an electronic device equipped with such a display device, using the devices possessed by the sub-pixel X.

[0202] For example, a display device or electronic device may have the function of measuring at least one of the following using a device provided by a sub-pixel X: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, magnetism, temperature, chemical substances, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, physical condition, pulse rate, body temperature, and blood oxygen concentration.

[0203] Functions of a display device or electronic device include, for example, a strobe light function, a flash light function, a degradation correction function, an acceleration sensor function, an odor sensor function, a physical condition detection function, a pulse detection function, a body temperature detection function, or a blood oxygen concentration measurement function.

[0204] A strobe light function can be implemented, for example, by a configuration that repeatedly switches between emitting and not emitting light in short cycles.

[0205] A flashlight function can be implemented, for example, by generating a flash of light through instantaneous discharge using principles such as the electric double layer.

[0206] The strobe light and flashlight functions can be used, for example, for crime prevention or self-defense purposes. The preferred light color for the strobe and flashlight is white. However, there are no particular limitations on the light color of the strobe and flashlight; the user can select one or more of the most suitable colors, such as white, blue, purple, blue-violet, green, yellow-green, yellow, orange, or red.

[0207] One degradation correction function is one that corrects the degradation of the light-emitting device of at least one sub-pixel selected from sub-pixels G, B, and R. More specifically, if the reliability of the material used for the light-emitting device of sub-pixel G is poor, sub-pixel X can be configured to have the same configuration as sub-pixel G, thereby creating a configuration in pixel 180B that includes two sub-pixels G. This configuration doubles the area of ​​sub-pixel G. By doubling the area of ​​sub-pixel G, it is possible to increase the reliability by about twice compared to a configuration with only one sub-pixel G. Alternatively, by creating a configuration in pixel 180B that includes two sub-pixels G, if one sub-pixel G becomes non-emitting due to degradation or other reasons, the other sub-pixel G can compensate for the emission of light from the other sub-pixel G.

[0208] Although sub-pixel G was explicitly mentioned above, sub-pixels B and R can also be configured in the same way.

[0209] Acceleration sensor function, odor sensor function, physical condition detection function, pulse detection function, body temperature detection function, and blood oxygen concentration measurement function can each be realized by providing the necessary sensor devices in the sub-pixel X. Furthermore, the display device or electronic device can realize various functions depending on the sensor devices provided in the sub-pixel X.

[0210] As described above, by assigning various functions to the sub-pixel X shown in Figure 16B, a display device having pixel 180B can be called a multi-function display device or a multi-function panel. The sub-pixel X may have one or more functions, and the implementer can select the most appropriate function as appropriate.

[0211] Furthermore, a display device according to one aspect of the present invention may have a pixel composed of four subpixels, without having both subpixel X and subpixel IRS. That is, it may have a pixel having subpixel G, subpixel B, subpixel R, and subpixel PS. Also, the number of subpixels that a pixel has may differ from one another in the display device. On the other hand, in order to ensure uniform quality for each pixel, it is preferable that all pixels have the same number of subpixels.

[0212] For example, a display device according to one aspect of the present invention may have both the pixel 180A shown in Figure 16A and the pixel 180C shown in Figure 16C.

[0213] Pixel 180C, shown in Figure 16C, has sub-pixels G, B, R, PS, and IR.

[0214] Sub-pixel IR has a light-emitting device that emits infrared light. In other words, sub-pixel IR can be used as a light source for the sensor. By having a light-emitting device that emits infrared light in the display device, it is not necessary to provide a separate light source from the display device, which can reduce the number of components in the electronic device.

[0215] Figure 16D shows an example of a cross-sectional view of an electronic device having a display device according to one embodiment of the present invention.

[0216] The electronic device shown in Figure 16D has a display device 100 between the housing 103 and the protective member 105.

[0217] The display device 100 shown in Figure 16D corresponds to the cross-sectional structure between the dashed lines A1 and A2 in Figure 16A and the cross-sectional structure between the dashed lines A3 and A4 in Figure 16C. In other words, the display device 100 shown in Figure 16D has pixels 180A and pixels 180C.

[0218] Sub-pixel R has a light-emitting device 130R that emits red light 31R. Sub-pixel G has a light-emitting device 130G that emits green light 31G. Sub-pixel B has a light-emitting device 130B that emits blue light 31B.

[0219] Sub-pixel PS has a light-receiving device 150PS, and sub-pixel IRS has a light-receiving device 150IRS. Sub-pixel IR has a light-emitting device 130IR that emits infrared light 31IR.

[0220] As shown in Figure 16D, the infrared light 31IR emitted by the light-emitting device 130IR is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light-receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light-receiving device 150IRS.

[0221] Figures 17 to 20 show an example of the display device layout.

[0222] The near-touch sensor function can be implemented, for example, by illuminating an object (such as a finger, hand, or pen) with a light source fixed at a specific location, detecting the reflected light from the object with multiple sub-pixel IRS, and estimating the object's position based on the detection intensity ratio of the multiple sub-pixel IRS.

[0223] Pixels 180A having sub-pixel IRS can be configured to be arranged at regular intervals within the display unit, or arranged around the outer perimeter of the display unit.

[0224] By using only a subset of pixels for near-touch detection, the drive frequency can be increased. Furthermore, since sub-pixels X or IR can be incorporated into other pixels, a multi-functional display device can be realized.

[0225] The display device 100A shown in Figure 17 has two types of pixels: pixels 180A and pixels 180B. In the display device 100A, one pixel 180A is provided for every 3x3 pixels (9 pixels), and the configuration of pixels 180B is applied to the remaining pixels.

[0226] Furthermore, the placement of pixel 180A is not limited to one pixel every 3x3 pixels. For example, the number of pixels used for touch detection can be appropriately determined, such as one pixel every 4 pixels (2x2 pixels), one pixel every 16 pixels (4x4 pixels), one pixel every 100 pixels (10x10 pixels), or one pixel every 900 pixels (30x30 pixels).

[0227] The display device 100B shown in Figure 18 has two types of pixels: pixels 180A and pixels 180C. In the display device 100B, one pixel 180A is provided for every 3x3 pixels (9 pixels), and the configuration of pixels 180C is applied to the remaining pixels.

[0228] The display device 100C shown in Figure 19 has two types of pixels: pixels 180A and pixels 180B. In the display device 100C, pixels 180A are provided on the outer periphery of the display unit, and the configuration of pixels 180B is applied to the other pixels.

[0229] When pixels 180A are provided on the outer perimeter of the display unit, the pixels 180A may be arranged to surround all four sides as shown in Figure 19, or they may be placed at the four corners, or one or more may be placed on each side, allowing for a variety of arrangements to be applied.

[0230] The display device 100D shown in Figure 20 has two types of pixels: pixels 180A and pixels 180C. In the display device 100D, pixels 180A are provided on the outer periphery of the display unit, and the configuration of pixels 180C is applied to the other pixels.

[0231] In Figures 17 and 19, infrared light 31IR emitted from a light source 104 located outside the display unit of the display device is reflected by an object 108, and the reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by sub-pixels IRS provided in the pixels 180A, and the position of the object 108 can be estimated by the detection intensity ratio of the multiple sub-pixels IRS.

[0232] The light source 104 is provided at least outside the display unit of the display device, and may be built into the display device or mounted separately on an electronic device. For example, the light source 104 can be a light-emitting diode that emits infrared light.

[0233] In Figures 18 and 20, infrared light 31IR emitted by the sub-pixel IR of pixel 180C is reflected by the object 108, and the reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by the sub-pixel IRS provided in the pixels 180A, and the position of the object 108 can be estimated by the detection intensity ratio of the multiple sub-pixel IRS.

[0234] As described above, the layout of the display device can take various forms.

[0235] Figure 21A shows an example different from the aforementioned pixels 180A to 180C. Pixel 180D shown in Figure 21A has sub-pixels G, B, R, IR, PS, and IRS. Figure 21A shows an example where sub-pixels are provided in 2 rows and 3 columns for a single pixel 180D. Pixel 180D has 3 sub-pixels (sub-pixels G, B, and R) in the top row (1st row) and 3 sub-pixels (sub-pixels IR, PS, and IRS) in the bottom row (2nd row). In other words, pixel 180D has 2 sub-pixels (sub-pixels G and IR) in the left column (1st column), 2 sub-pixels (sub-pixels B and PS) in the middle column (2nd column), and 2 sub-pixels (sub-pixels R and IRS) in the right column (3rd column). Note that the arrangement of subpixels is not limited to the configuration shown in Figure 21A.

[0236] Detailed explanations of sub-pixels G, B, R, IR, PS, and IRS are omitted as they can be found in the previously mentioned description.

[0237] As shown in FIG. 21B, pixel 180D includes pixel circuit 21R, pixel circuit 21G, pixel circuit 21B, pixel circuit 21IR, and pixel circuit 22. Since pixel circuits 21R, 21G, 21B, and 22 can be referred to the above description, detailed description thereof is omitted. Pixel circuit 21IR has a function of controlling light emission of sub-pixel IR. Pixel circuit 21IR can adopt the configuration of pixel circuit 21R, pixel circuit 21G, or pixel circuit 21B. For example, pixel circuit 21IR can use pixel circuit 21 shown in FIG. 2B.

[0238] The cross-sectional structure between the dashed-dotted line A5 - A6 in FIG. 21A is shown in FIGS. 21C and 21D. FIG. 21C shows a state where infrared light 31IR emitted from light-emitting device 130IR is reflected by object 108 (here, a finger), and reflected light 32IR from object 108 is incident on light-receiving device 150IRS. FIG. 21D shows a state where green light 31G emitted from light-emitting device 130G is reflected by object 108 (here, a finger), and reflected light 32G from object 108 is incident on light-receiving device 150PS.

[0239] Display device 100E shown in FIG. 22 includes pixel 180D. As shown in FIG. 22, infrared light 31IR emitted from pixel 180D is reflected by object 108 (here, a finger), and reflected light 32IR from object 108 is incident on light-receiving device 150IRS included in pixel 180D. Display device 100E can detect that object 108 has contacted or approached.

[0240] Although FIG. 22 shows an example of a display device composed of pixel 180D, one aspect of the present invention is not limited thereto. A display device may be configured by combining pixel 180D with any one or more of pixel 180A, pixel 180B, or pixel 180C.

[0241] The display device according to one aspect of the present invention may emit light of a specific color and receive the reflected light reflected by an object. FIGS. 23A schematically show, by arrows, the red light emitted from the display device and the red light incident on the display device by being reflected by the object 108 (here, a finger). FIGS. 23B schematically show, by arrows, the infrared light emitted from the display device and the infrared light incident on the display device by being reflected by the object 108 (here, a finger).

[0242] When the object is in contact with or close to the display device, by emitting red light and the reflected light from the object being incident on the display device, the transmittance of the object with respect to the red light can be measured. Similarly, when the object is in contact with or close to the display device, by emitting infrared light and the reflected light from the object being incident on the display device, the transmittance of the object with respect to the infrared light can be measured.

[0243] An enlarged view of the region P indicated by the dashed line in FIG. 23A is shown in FIG. 23C. The light 31R emitted from the light-emitting device 130R is scattered by the surface and internal biological tissues of the object 108, and part of the scattered light travels in the direction of the light-receiving device 150PS from inside the living body. This scattered light passes through the blood vessel 91, and the transmitted light 32R is incident on the light-receiving device 150PS.

[0244] Similarly, the infrared light emitted from the light-emitting device 130IR is scattered by the surface and internal biological tissues of the object 108, and part of the scattered light travels in the direction of the light-receiving device 150IRS from inside the living body. This scattered light passes through the blood vessel 91, and the transmitted infrared light is incident on the light-receiving device 150IRS.

[0245] Here, light 32R is light that has passed through biological tissue 93 and blood vessels 91 (arteries and veins). Because arterial blood pulsates with the heartbeat, the absorption of light by arteries fluctuates according to the heartbeat. On the other hand, since biological tissue 93 and veins are not affected by the heartbeat, the absorption of light by biological tissue 93 and the absorption of light by veins remain constant. Therefore, by removing a constant component over time from the light 32R incident on the display device, the light transmittance of arteries can be calculated. In addition, the transmittance of red light is lower in hemoglobin that is not bound to oxygen (also called deoxygenated hemoglobin) than in hemoglobin that is bound to oxygen (also called oxygenated hemoglobin). The transmittance of infrared light is about the same for oxygenated hemoglobin and deoxygenated hemoglobin. By measuring the transmittance of arteries to red light and to infrared light, the ratio of oxygenated hemoglobin to the sum of oxygenated and deoxygenated hemoglobin, i.e., oxygen saturation (hereinafter also called peripheral oxygen saturation (SpO2)), can be calculated. Thus, a display device according to one aspect of the present invention can function as a reflective pulse oximeter.

[0246] For example, when a finger touches the display area of ​​a display device, positional information of the area in contact with the finger is acquired. Then, red light is emitted from the area in contact with the finger and the pixels in its vicinity, and the transmittance of the arteries to red light is measured. Subsequently, infrared light is emitted, and the transmittance of the arteries to infrared light is measured, thereby calculating oxygen saturation. Note that the order in which the transmittance to red light and the transmittance to infrared light are measured is not particularly limited. The transmittance to infrared light may be measured first, followed by the transmittance to red light. Furthermore, although an example of calculating oxygen saturation using a finger is shown here, the present invention is not limited to this. Oxygen saturation can also be calculated using parts other than the finger. For example, oxygen saturation can be calculated by measuring the transmittance of the arteries to red light and the transmittance of the arteries to infrared light while the palm is in contact with the display area of ​​the display device.

[0247] Figure 24A shows an example of an electronic device to which a display device according to one aspect of the present invention is applied. The portable information terminal 400 shown in Figure 24A can be used, for example, as a smartphone. The portable information terminal 400 has a housing 402 and a display unit 404. The display unit 404 preferably has the aforementioned 180 pixels. For example, the aforementioned display device 100E can be applied to the display unit 404.

[0248] Figure 24A shows a finger 406 in contact with the display unit 404 of the portable information terminal 400. In Figure 24A, the area where the touch was detected and the surrounding area 408 are indicated by dashed lines.

[0249] The portable information terminal 400 emits red light from the pixels of region 408 and detects the red light incident on the display unit 404. Similarly, by emitting infrared light from the pixels of region 408 and detecting the infrared light incident on the display unit 404, the oxygen saturation of the finger 406 can be measured. Figure 24B shows the pixels of region 408 lit up. In Figure 24B, the finger 406 is transparent, with only the outline shown as a dashed line, and region 408 is hatched. As shown in Figure 24B, the lit region 408 is hidden by the finger 406 and is difficult for the user to see. Therefore, oxygen saturation can be measured without causing stress to the user. In addition, the portable information terminal 400 can measure oxygen saturation at any position within the display unit 404.

[0250] The obtained oxygen saturation may be displayed on the display unit 404. Figure 24C shows how an image 412 indicating oxygen saturation is displayed in region 410. In Figure 24C, the text "SpO297%" is shown as an example of image 412. Note that image 412 may be an image, or it may include both an image and text. Furthermore, region 410 may be provided at any position on the display unit 404.

[0251] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0252] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention and a method for manufacturing the same will be explained with reference to Figures 25 to 29.

[0253] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, since the pixels have a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed using all of the subpixels of the display device, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0254] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. Furthermore, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected. Moreover, in a display device according to one aspect of the present invention, the light-emitting devices can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0255] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected light (or scattered light), thus enabling image capture or touch detection even in dark places.

[0256] A display device according to one aspect of the present invention has the function of displaying an image using a light-emitting device. In other words, the light-emitting device functions as a display device (also called a display element).

[0257] It is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) and QLEDs (Quantum-dot Light Emitting Diodes) as light-emitting devices. Examples of light-emitting materials for EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). LEDs such as microLEDs (Light Emitting Diodes) can also be used as light-emitting devices. As a TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device.

[0258] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0259] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0260] For example, an image sensor can be used to acquire biometric data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By having the display device incorporate the biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided, enabling miniaturization and weight reduction of the electronic device.

[0261] When a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0262] The light-receiving device can use, for example, a pn-type or pin-type photodiode. The light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates electric charges. The amount of electric charges generated from the light-receiving device is determined based on the amount of light incident on the light-receiving device.

[0263] In particular, as the light-receiving device, it is preferable to use an organic photodiode having a layer containing an organic compound. The organic photodiode is easy to be thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0264] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0265] Since the organic photodiode has many layers that can be made into a common configuration with the organic EL device, the layers that can be made into a common configuration can be formed in a batch, thereby suppressing an increase in the film-forming process.

[0266] For example, one of the pair of electrodes (common electrode) can be a common layer for the light-receiving device and the light-emitting device. Also, for example, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer is a common layer for the light-receiving device and the light-emitting device.

[0267] Note that layers common to both light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components are referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0268] When manufacturing a display device having multiple organic EL devices, each with a different light-emitting layer color, it is necessary to form each light-emitting layer with a different color in an island-like structure.

[0269] For example, island-shaped light-emitting layers can be formed using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the formed film due to vapor scattering. This makes it difficult to achieve high resolution and high aperture ratio in display devices.

[0270] In a method for manufacturing a display device according to one aspect of the present invention, island-shaped pixel electrodes (also called lower electrodes) are formed, and a first layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a first color is formed on one surface, and then a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Subsequently, a second layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a second color is formed in an island shape using the second sacrificial layer and the second resist mask, similar to the first layer.

[0271] Thus, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped EL layer is not formed using a fine metal mask, but rather formed by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be manufactured separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, by providing a sacrificial layer on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0272] While it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less.

[0273] The pattern of the EL layer itself can be made extremely small compared to when a metal mask is used. Furthermore, when a metal mask is used to create different EL layers, for example, variations in thickness occur between the center and edges of the pattern, resulting in a smaller effective area usable as an emitting region relative to the total area of ​​the pattern. On the other hand, with the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as an emitting region. Therefore, it is possible to manufacture a display device that combines high resolution and a high aperture ratio.

[0274] Here, the first layer and the second layer each include at least an emissive layer, and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the emissive layer. By having other layers between the emissive layer and the sacrificial layer, it is possible to suppress the exposure of the emissive layer to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the emissive layer. This can improve the reliability of the light-emitting device.

[0275] Furthermore, in light-emitting devices that emit different colors, it is not necessary to create all the layers constituting the EL layer separately; some layers can be formed in the same process. In one embodiment of the present invention, a method for manufacturing a display device involves forming some of the layers constituting the EL layer in island-like structures for each color, then removing the sacrificial layer, and forming the remaining layers constituting the EL layer and a common electrode (also called an upper electrode) in common for each color.

[0276] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but rather by depositing a film that will become the active layer onto one surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, the damage that the active layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0277] [Example of display device configuration 1] Figures 25A and 25B show a display device according to one embodiment of the present invention.

[0278] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0279] Figure 25A shows a top view of the display device 100F. The display device 100F has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit. One pixel 110 is composed of five subpixels: subpixels 110a, 110b, 110c, 110d, and 110e. The connection unit 140 can be called a cathode contact unit.

[0280] Figure 25A shows an example where a single pixel 110 has subpixels arranged in two rows and three columns. Pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and two subpixels (subpixels 110d and 110e) in the bottom row (row 2). In other words, pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110e extending across these two columns.

[0281] In this embodiment, sub-pixels 110a, 110b, and 110c each have light-emitting devices that emit light of different colors, and sub-pixels 110d and 110e each have light-receiving devices with different light-receiving areas. For example, sub-pixels 110a, 110b, and 110c correspond to sub-pixels G, B, and R shown in Figure 14A, etc. Also, sub-pixel 110d corresponds to sub-pixel PS shown in Figure 14A, etc., and sub-pixel 110e corresponds to sub-pixel IRS shown in Figure 14A, etc.

[0282] Furthermore, the device provided in each sub-pixel 110e may be changed for each pixel. This allows for a configuration where some sub-pixels 110e correspond to sub-pixel IRS, and other sub-pixels 110e correspond to sub-pixel X (see Figure 16B) or sub-pixel IR (see Figure 16C).

[0283] Figure 25A shows an example where the connection portion 140 is located below the display portion in a top view, but it is not particularly limited. The connection portion 140 only needs to be provided in at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. Also, there may be one or more connection portions 140.

[0284] Figure 25B shows cross-sectional views between the dashed lines X1-X2, Y3-Y4, and Y1-Y2 in Figure 25A.

[0285] As shown in Figure 25B, the display device 100F has light-emitting devices 130a, 130b, 130c, a light-receiving device 150d (see Figure 29B), and a light-receiving device 150e on a layer 101 containing transistors, and a protective layer 131 is provided to cover these light-emitting and light-receiving devices. A substrate 120 is bonded to the protective layer 131 by a resin layer 119.

[0286] For example, the layer 101 containing transistors can be a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. An example of the configuration of the layer 101 containing transistors will be described later in Embodiment 4.

[0287] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0288] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0289] In a light-emitting device, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0290] The light-emitting device 130a includes a pixel electrode 111a on a layer 101 containing a transistor, a first layer 113a on the pixel electrode 111a, a sixth layer 114 on the first layer 113a, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130a, the first layer 113a and the sixth layer 114 can be collectively referred to as the EL layer.

[0291] The first layer 113a includes a first hole injection layer 181a on the pixel electrode 111a, a first hole transport layer 182a on the first hole injection layer 181a, a first light-emitting layer 183a on the first hole transport layer 182a, and a first electron transport layer 184a on the first light-emitting layer 183a.

[0292] The sixth layer 114 may, for example, have an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer laminated together.

[0293] The light-emitting device 130b includes a pixel electrode 111b on a layer 101 containing a transistor, a second layer 113b on the pixel electrode 111b, a sixth layer 114 on the second layer 113b, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130b, the second layer 113b and the sixth layer 114 can be collectively referred to as the EL layer.

[0294] The second layer 113b includes a second hole injection layer 181b on the pixel electrode 111b, a second hole transport layer 182b on the second hole injection layer 181b, a second light-emitting layer 183b on the second hole transport layer 182b, and a second electron transport layer 184b on the second light-emitting layer 183b.

[0295] The light-emitting device 130c includes a pixel electrode 111c on a layer 101 containing a transistor, a third layer 113c on the pixel electrode 111c, a sixth layer 114 on the third layer 113c, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130c, the third layer 113c and the sixth layer 114 can be collectively referred to as the EL layer.

[0296] The third layer 113c includes a third hole injection layer 181c on the pixel electrode 111c, a third hole transport layer 182c on the third hole injection layer 181c, a third light-emitting layer 183c on the third hole transport layer 182c, and a third electron transport layer 184c on the third light-emitting layer 183c.

[0297] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0298] The photodetector has an active layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0299] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. In other words, by applying a reverse bias between the pixel electrode and the common electrode, the photodetector can detect incoming light, generate an electric charge, and extract it as an electric current.

[0300] The light-receiving device 150d (see Figures 28C and 29B) includes a pixel electrode 111d on a layer 101 containing a transistor, a fourth layer 113d on the pixel electrode 111d, a sixth layer 114 on the fourth layer 113d, and a common electrode 115 on the sixth layer 114.

[0301] The fourth layer 113d includes a fourth hole transport layer 182d on the pixel electrode 111d, a first active layer 185d on the fourth hole transport layer 182d, and a fourth electron transport layer 184d on the first active layer 185d.

[0302] The sixth layer 114 is a layer common to both the light-emitting device and the light-receiving device. As described above, the sixth layer 114 has, for example, an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer stacked together.

[0303] Here, layers common to both the light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both the light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0304] The light-receiving device 150e includes a pixel electrode 111e on a layer 101 containing a transistor, a fifth layer 113e on the pixel electrode 111e, a sixth layer 114 on the fifth layer 113e, and a common electrode 115 on the sixth layer 114.

[0305] The fifth layer 113e includes a fifth hole transport layer 182e on the pixel electrode 111e, a second active layer 185e on the fifth hole transport layer 182e, and a fifth electron transport layer 184e on the second active layer 185e.

[0306] The common electrode 115 is electrically connected to the conductive layer 123 provided on the connection portion 140. As a result, the same potential is supplied to the common electrode 115 of each color light-emitting device.

[0307] Of the pixel electrodes and common electrodes, the electrode that extracts light should preferably use a conductive film that transmits visible light and infrared light. Furthermore, it is preferable to use a conductive film that reflects visible light and infrared light on the electrode that does not extract light.

[0308] As materials for forming a pair of electrodes (pixel electrode and common electrode) of light-emitting and light-receiving devices, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0309] It is preferable that the light-emitting device and the light-receiving device have a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device and the light-receiving device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting device. By having a microcavity structure in the light-receiving device, the light received by the active layer can be made to resonate between the two electrodes, thereby strengthening the light and improving the detection accuracy of the light-receiving device.

[0310] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0311] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the transmittance or reflectance of these electrodes to near-infrared light (light with a wavelength of 750 nm to 1300 nm) satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0312] The first layer 113a, the second layer 113b, and the third layer 113c each have an emissive layer. Preferably, the first layer 113a, the second layer 113b, and the third layer 113c each have an emissive layer that emits light of a different color.

[0313] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. As the luminescent material, materials exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be used as appropriate. Furthermore, materials emitting near-infrared light can also be used as the luminescent material.

[0314] Examples of luminescent materials include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.

[0315] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0316] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0317] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0318] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0319] The first layer 113a, the second layer 113b, and the third layer 113c may further include layers other than the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0320] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0321] For example, the first layer 113a, the second layer 113b, and the third layer 113c may each have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0322] The sixth layer 114 may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, when the pixel electrodes 111a, 111b, and 111c function as anodes and the common electrode 115 functions as a cathode, it is preferable that the sixth layer 114 has an electron injection layer.

[0323] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection properties. Examples of materials with high hole injection properties include composite materials containing a hole transport material (e.g., aromatic amine compounds) and an acceptor material (electron-accepting material).

[0324] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials are those with high hole transport capabilities, such as π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton).

[0325] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer. In a light-receiving device, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material has a density of 1 × 10⁻¹⁶ -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Electron transport materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0326] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof can be used as the material with high electron injection properties. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as the material with high electron injection properties.

[0327] The electron injection layer includes, for example, lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used.

[0328] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0329] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0330] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0331] The fourth layer 113d and the fifth layer 113e each have an active layer. The fourth layer 113d and the fifth layer 113e may have active layers with the same configuration or may have active layers with different configurations. For example, since the light receiving device has a microcavity structure, even if the configurations of the active layers are the same, light with different wavelengths can be detected by the fourth layer 113d and the fifth layer 113e. Note that the microcavity structure can be formed by changing the thickness of the pixel electrode or the thickness of the optical adjustment layer in the light receiving devices 150d and 150e. In this case, the fourth layer 113d and the fifth layer 113e may have the same configuration.

[0332] The first active layer 185d and the second active layer 185e each contain a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light emitting layer and the active layer can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0333] Examples of the material of the n-type semiconductor included in the active layer include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70 etc.) and fullerene derivatives. Fullerene has a shape like a soccer ball, and this shape is energetically stable. Fullerene has deep (low) HOMO level and LUMO level. Since fullerene has a deep LUMO level, it has extremely high electron-accepting (acceptor) property. Usually, when π electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property becomes high. However, since fullerene has a spherical shape, although the π electrons are widely spread, the electron-accepting property becomes high. High electron-accepting property is beneficial for a light receiving device because it causes charge separation to occur efficiently at high speed. C 60 , C 70 both have a broad absorption band in the visible light region. In particular, C 70 is C 60Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0334] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0335] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0336] Examples of materials for p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, examples of materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0337] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0338] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0339] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0340] The fourth layer 113d and the fifth layer 113e may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, the fourth layer 113d and the fifth layer 113e may have various functional layers that can be used in the first layer 113a, the second layer 113b, and the third layer 113c.

[0341] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0342] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. In addition, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0343] The active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method can be used in which an acceptor material is dispersed in PBDB-T or a PBDB-T derivative.

[0344] The active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0345] It is preferable to have a protective layer 131 on the light-emitting devices 130a, 130b, 130c and the light-receiving devices 150d, 150e. Providing the protective layer 131 can improve the reliability of the light-emitting devices and the light-receiving devices.

[0346] The conductivity of the protective layer 131 is not required. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 131.

[0347] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting devices 130a, 130b, 130c and the light-receiving devices 150d, 150e, thereby suppressing the degradation of the light-emitting and light-receiving devices and improving the reliability of the display device.

[0348] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride film and aluminum nitride film.

[0349] In this specification, the term "oxidogenic nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content.

[0350] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0351] The protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0352] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0353] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress the penetration of impurities (water, oxygen, etc.) into the EL layer.

[0354] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0355] Each end of the pixel electrodes 111a, 111b, and 111c is covered by an insulating layer 121.

[0356] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0357] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0358] Light-emitting devices can be broadly classified into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, one should select light-emitting layers such that the light emitted from each of the two or more layers is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0359] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0360] When comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use an SBS structure light-emitting device. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0361] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices can be 1 μm or less, preferably 500 nm or less, and more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display device of this embodiment has a region where the distance between the side surface of the first layer 113a and the side surface of the second layer 113b, or the distance between the side surface of the second layer 113b and the side surface of the third layer 113c is 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0362] Furthermore, the distance between the light-emitting device and the light-receiving device can also be within the above range. In addition, to suppress leakage between the light-emitting device and the light-receiving device, it is preferable to make the distance between the light-emitting device and the light-receiving device wider than the distance between the light-emitting devices. For example, the distance between the light-emitting device and the light-receiving device can be 8 μm or less, 5 μm or less, or 3 μm or less.

[0363] [Examples of methods for manufacturing display devices] Next, an example of a method for manufacturing a display device will be explained using Figures 26 to 29. Figures 26A to 26D show side by side the cross-sectional views between X1 and X2, between X3 and X4, and between Y1 and Y2, as shown by the dashed line in Figure 25A. Figures 27 to 29 are similar to Figure 26.

[0364] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), ALD, and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0365] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute a display device can be formed by methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, and knife coating.

[0366] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers (hole injection layers, hole transport layers, light-emitting layers, electron transport layers, electron injection layers, etc.) included in the EL layer can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0367] When processing the thin film that constitutes the display device, it can be processed using methods such as photolithography. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, or lift-off methods. Furthermore, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0368] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0369] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0370] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0371] First, as shown in Figure 26A, pixel electrodes 111a, 111b, 111c, 111d, 111e, and a conductive layer 123 are formed on the layer 101 containing the transistor. Each pixel electrode is provided on the display section, and the conductive layer 123 is provided on the connection section 140.

[0372] Next, an insulating layer 121 is formed to cover the edges of the pixel electrodes 111a, 111b, 111c, 111d, and 111e, and the edges of the conductive layer 123.

[0373] Then, as shown in Figure 26B, a first hole injection layer 181A, a first hole transport layer 182A, a first light-emitting layer 183A, and a first electron transport layer 184A are formed in this order on each pixel electrode and on the insulating layer 121, a first sacrificial layer 118A is formed on the first electron transport layer 184A, and a second sacrificial layer 119A is formed on the first sacrificial layer 118A.

[0374] Figure 26B shows an example in which the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, the first electron transport layer 184A, the first sacrificial layer 118A, and the second sacrificial layer 119A are all provided on the conductive layer 123 in a cross-sectional view between Y1 and Y2, but the invention is not limited to this example.

[0375] For example, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, the first electron transport layer 184A, and the first sacrificial layer 118A do not have to overlap with the conductive layer 123. Also, the ends of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A on the connection portion 140 side may be located inward from the ends of the first sacrificial layer 118A and the second sacrificial layer 119A. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask to distinguish it from a fine metal mask), the areas to be deposited in the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, as well as the first sacrificial layer 118A and the second sacrificial layer 119A, can be varied. In one embodiment of the present invention, a light-emitting device is formed using a resist mask, but by combining it with an area mask as described above, a light-emitting device can be manufactured in a relatively simple process.

[0376] The materials that can be used as pixel electrodes are as described above. For forming the pixel electrodes, for example, sputtering or vacuum deposition can be used.

[0377] The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0378] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Furthermore, inorganic insulating films that can be used for the protective layer 131 can be used as inorganic insulating films that can be used for the insulating layer 121.

[0379] When an inorganic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, impurities are less likely to enter the light-emitting device compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting device. When an organic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, the step coverage is higher compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrodes. Therefore, short circuits in the light-emitting device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape or the like. In this specification, a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°.

[0380] The insulating layer 121 is optional. Omitting the insulating layer 121 may increase the aperture ratio of the subpixels. Alternatively, it may allow for a reduction in the distance between subpixels, potentially increasing the detail or resolution of the display device.

[0381] The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are layers that later become the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. Therefore, the configurations applicable to the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a described above can be applied to each of them. The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. Furthermore, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A may each be formed using a premixed material. In this specification, a premixed material is a composite material obtained by pre-combining or mixing multiple materials.

[0382] In this embodiment, an example is shown in which the sacrificial layer has a two-layer structure consisting of a first sacrificial layer and a second sacrificial layer, but the sacrificial layer may be a single-layer structure or a laminated structure of three or more layers. For the sacrificial layer, a film with high resistance to the processing conditions of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, as well as various functional layers (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and active layer, etc.) formed in later processes, specifically a film with a high etching selectivity ratio, is used.

[0383] For forming the sacrificial layer, methods such as sputtering, ALD (thermal ALD, PEALD), or vacuum deposition can be used. A method that minimizes damage to the EL layer is preferred, and it is preferable to use ALD or vacuum deposition rather than sputtering to form the sacrificial layer.

[0384] It is preferable to use a film that can be removed by wet etching for the sacrificial layer. By using wet etching, the damage inflicted on the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A during processing of the sacrificial layer can be reduced compared to when using dry etching.

[0385] In the manufacturing process of the display device according to this embodiment, it is desirable that the various functional layers constituting the light-emitting device and the light-receiving device (such as hole injection layer, hole transport layer, light-emitting layer, active layer, and electron transport layer) are difficult to process, and that the various sacrificial layers are difficult to process during the processing of the functional layers. It is desirable that the material and processing method of the sacrificial layers and the processing method of the functional layers be selected with these factors in mind.

[0386] The sacrificial layer can be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film.

[0387] The sacrificial layer can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials.

[0388] Metal oxides such as In-Ga-Zn oxide can be used as the sacrificial layer. For example, an In-Ga-Zn oxide film can be formed as the sacrificial layer using a sputtering method. Furthermore, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0389] In addition, element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0390] The sacrificial layer can be any inorganic insulating film that can be used for the protective layer 131. In particular, oxide insulating films are preferred because they have higher adhesion to the EL layer compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial layer. As a sacrificial layer, for example, an aluminum oxide film can be formed using the ALD method. Using the ALD method is preferable because it reduces damage to the substrate (especially the EL layer).

[0391] For example, a laminated structure can be applied as a sacrificial layer, consisting of an In-Ga-Zn oxide film formed by sputtering and an aluminum oxide film formed on the In-Ga-Zn oxide film using ALD. Alternatively, a laminated structure can be applied as a sacrificial layer, consisting of an aluminum oxide film formed by ALD and an In-Ga-Zn oxide film formed on the aluminum oxide film using sputtering. Furthermore, a single-layer structure of an aluminum oxide film formed by ALD can be applied as a sacrificial layer.

[0392] Next, as shown in Figure 26C, a resist mask 190a is formed on the second sacrificial layer 119A. The resist mask can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it. The resist mask 190a is positioned to overlap with the pixel electrode 111a. Preferably, the resist mask 190a does not overlap with the pixel electrodes 111b, 111c, 111d, 111e, and the conductive layer 123. If the resist mask 190a overlaps with the pixel electrodes 111b, 111c, 111d, 111e, or the conductive layer 123, it is preferable to have an insulating layer 121 in between.

[0393] Then, as shown in Figure 26D, a portion of the second sacrificial layer 119A is removed using the resist mask 190a. This removes the region of the second sacrificial layer 119A that does not overlap with the resist mask 190a. Therefore, the second sacrificial layer 119a remains in the position that overlaps with the pixel electrode 111a. After that, the resist mask 190a is removed.

[0394] Next, as shown in Figure 27A, a portion of the first sacrificial layer 118A is removed using the second sacrificial layer 119a. This removes the region of the first sacrificial layer 118A that does not overlap with the second sacrificial layer 119a. Therefore, the stacked structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains in the position that overlaps with the pixel electrode 111a.

[0395] Next, as shown in Figure 27B, a portion of the first hole injection layer 181A, a portion of the first hole transport layer 182A, a portion of the first light-emitting layer 183A, and a portion of the first electron transport layer 184A are removed using the first sacrificial layer 118a and the second sacrificial layer 119a. This removes the regions of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A that do not overlap with the first sacrificial layer 118a and the second sacrificial layer 119a. As a result, the pixel electrodes 111b, 111c, 111d, 111e, and the conductive layer 123 are exposed. Then, a stacked structure consisting of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, the first electron transport layer 184a, the first sacrificial layer 118a, and the second sacrificial layer 119a remains on the pixel electrode 111a. The stacked structure consisting of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a is also referred to as the first layer 113a.

[0396] The first sacrificial layer 118A and the second sacrificial layer 119A can be processed by wet etching or dry etching, respectively. It is preferable to process the first sacrificial layer 118A and the second sacrificial layer 119A by anisotropic etching.

[0397] By using the wet etching method, damage to the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A during processing of the sacrificial layer can be reduced compared to the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0398] When using the dry etching method, degradation of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed by not using an oxygen-containing gas as the etching gas. When using the dry etching method, it is preferable to use a gas containing a noble gas (also called a rare gas) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0399] By creating a layered structure for the sacrificial layer, a portion of the layer can be processed using the resist mask 190a, and after removing the resist mask 190a, the portion of the layer can be used as a hard mask to process the remaining layer.

[0400] For example, after processing the second sacrificial layer 119A using a resist mask 190a, the resist mask 190a is removed by ashing using oxygen plasma or the like. At this time, the first sacrificial layer 118A is located on the outermost surface, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are not exposed. Therefore, damage to the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed during the removal process of the resist mask 190a. Then, the first sacrificial layer 118A can be fabricated using the second sacrificial layer 119a as a hard mask, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be fabricated using the first sacrificial layer 118a and the second sacrificial layer 119a as a hard mask.

[0401] The processing of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A is preferably carried out by anisotropic etching. In particular, anisotropic dry etching is preferred. The etching gas is preferably a gas containing nitrogen, a gas containing hydrogen, a gas containing noble gas, a gas containing nitrogen and argon, or a gas containing nitrogen and hydrogen. By not using an oxygen-containing gas as the etching gas, the degradation of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed.

[0402] Next, as shown in Figure 27C, a second hole injection layer 181B, a second hole transport layer 182B, a second light-emitting layer 183B, and a second electron transport layer 184B are formed in this order on the second sacrificial layer 119a, pixel electrodes 111b, 111c, 111d, 111e, and insulating layer 121, and a first sacrificial layer 118B is formed on the second electron transport layer 184B, and a second sacrificial layer 119B is formed on the first sacrificial layer 118B.

[0403] The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are layers that later become the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b, respectively. The second light-emitting layer 183b emits light of a different color than the first light-emitting layer 183a. The configurations and materials applicable to the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b are the same as those for the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. The second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be formed using the same method as the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, respectively.

[0404] The first sacrificial layer 118B and the second sacrificial layer 119B can be formed using materials applicable to the first sacrificial layer 118A and the second sacrificial layer 119A.

[0405] Next, as shown in Figure 27C, a resist mask 190b is formed on the first sacrificial layer 118B. The resist mask 190b is positioned to overlap with the pixel electrode 111b.

[0406] Next, a portion of the second sacrificial layer 119B is removed using the resist mask 190b. This removes the region of the second sacrificial layer 119B that does not overlap with the resist mask 190b. As a result, the second sacrificial layer 119b remains in the position that overlaps with the pixel electrode 111b. Subsequently, the resist mask 190b is removed as shown in Figure 28A.

[0407] Next, the first sacrificial layer 118b is formed by processing the first sacrificial layer 118B using the second sacrificial layer 119b as a hard mask. Then, as shown in Figure 28B, the second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are formed by processing the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b using the first sacrificial layer 118b and the second sacrificial layer 119b as a hard mask. The stacked structure of the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b is also referred to as the second layer 113b.

[0408] The first sacrificial layer 118B and the second sacrificial layer 119B can be processed using methods applicable to the processing of the first sacrificial layer 118A and the second sacrificial layer 119A. The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be processed using methods applicable to the processing of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A. The resist mask 190b can be removed using methods and timing applicable to the removal of the resist mask 190a.

[0409] Similarly, a stacked structure of a third layer 113c, a first sacrificial layer 118c, and a second sacrificial layer 119c is formed on the pixel electrode 111c, a stacked structure of a fourth layer 113d, a first sacrificial layer 118d, and a second sacrificial layer 119d is formed on the pixel electrode 111d, and a stacked structure of a fifth layer 113e, a first sacrificial layer 118e, and a second sacrificial layer 119e is formed on the pixel electrode 111e. In this embodiment, an example is shown where the fourth layer 113d and the fifth layer 113e have different configurations, but if the fourth layer 113d and the fifth layer 113e have the same configuration, they can be manufactured in the same process.

[0410] Furthermore, it is preferable to also provide the resist mask used to form the fifth layer 113e on top of the conductive layer 123. This ensures that, as shown in Figure 28C, the laminated structure of the first sacrificial layer 118e and the second sacrificial layer 119e remains on the conductive layer 123. This configuration is preferable because it suppresses damage to the conductive layer 123 during the subsequent removal process of the first and second sacrificial layers.

[0411] Next, as shown in Figure 29A, the first sacrificial layers 118a, 118b, 118c, 118d, 118e and the second sacrificial layers 119a, 119b, 119c, 119d, 119e are removed. As a result, the first electron transport layer 184a is exposed on the pixel electrode 111a, the second electron transport layer 184b is exposed on the pixel electrode 111b, the third electron transport layer 184c is exposed on the pixel electrode 111c, the fourth electron transport layer 184d is exposed on the pixel electrode 111d, the fifth electron transport layer 184e is exposed on the pixel electrode 111e, and the conductive layer 123 is exposed at the connection portion 140.

[0412] The same method as the sacrificial layer processing method can be used for the sacrificial layer removal process. In particular, by using the wet etching method, the damage inflicted on the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e when removing the sacrificial layer can be reduced compared to when using the dry etching method.

[0413] Next, as shown in Figure 29B, a sixth layer 114 is formed so as to cover the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, the fifth layer 113e, and the insulating layer 121, and a common electrode 115 is formed on the sixth layer 114, the insulating layer 121, and the conductive layer 123.

[0414] The materials that can be used as the sixth layer 114 are as described above. The layers constituting the sixth layer 114 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. The layers constituting the sixth layer 114 may also be formed using a premixed material. The sixth layer 114 may be omitted if it is not needed.

[0415] The materials that can be used as the common electrode 115 are as described above. For the formation of the common electrode 115, for example, sputtering or vacuum deposition can be used.

[0416] Then, as shown in Figure 29B, a protective layer 131 is formed on the common electrode 115.

[0417] The materials that can be used for the protective layer 131 are as described above. Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 131 may be a single-layer structure or a multilayer structure. For example, the protective layer 131 may be a two-layer structure formed using different deposition methods.

[0418] In Figure 29B, an example is shown in which the sixth layer 114 extends into the region of the first layer 113a and the second layer 113b, but as shown in Figure 29C, a void 133 may be formed in that region.

[0419] The void 133 contains, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically helium, neon, argon, xenon, krypton, etc.).

[0420] If the refractive index of the air gap 133 is lower than that of the sixth layer 114, the light emitted from the light-emitting device is reflected at the interface between the sixth layer 114 and the air gap 133. This prevents the light emitted from the light-emitting device from being incident on adjacent pixels (or sub-pixels). This suppresses the mixing of light of different colors, thereby improving the display quality of the display device.

[0421] Then, by bonding the substrate 120 onto the protective layer 131 using the resin layer 119, the display device 100F shown in Figure 25B can be manufactured.

[0422] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped EL layer is formed not by the pattern of the metal mask, but by processing after the EL layer is deposited on one surface, so that the island-shaped EL layer can be formed with a uniform thickness. Furthermore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Moreover, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a light detection function and incorporates a light receiving device.

[0423] The first, second, and third layers constituting each color of light-emitting device are formed in separate processes. Therefore, each EL layer can be fabricated with a configuration (material, film thickness, etc.) suitable for each color of light-emitting device. This makes it possible to produce light-emitting devices with excellent characteristics.

[0424] [Example of display device configuration 2] Figures 30A and 30B show examples of the display device 100F that differ from those shown in Figures 25A and 25B.

[0425] The display device 100G shown in Figure 30A has a display unit in which a plurality of pixels 110A are arranged in a matrix, and a connection unit 140 outside the display unit. One pixel 110A is composed of six subpixels: subpixel 110a, subpixel 110b, subpixel 110c, subpixel 110d, subpixel 110e, and subpixel 110f.

[0426] Figure 30A shows an example where subpixels are provided in two rows and three columns for a single pixel 110A. Pixel 110A has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and three subpixels (subpixels 110d, 110e, and 110f) in the bottom row (row 2). In other words, pixel 110A has two subpixels (subpixels 110a and 110f) in the left column (column 1), two subpixels (subpixels 110b and 110d) in the middle column (column 2), and two subpixels (subpixels 110c and 110e) in the right column (column 3).

[0427] In this embodiment, sub-pixels 110a, 110b, 110c, and 110f each have light-emitting devices that emit light in different wavelength ranges, and sub-pixels 110d and 110e each have light-receiving devices that are sensitive to different wavelength ranges. For example, sub-pixels 110a, 110b, 110c, 110d, 110e, and 110f correspond to sub-pixels G, B, R, IR, PS, and IRS shown in Figure 21A, etc.

[0428] Figure 30B shows cross-sectional views between the dashed lines X1-X2, X5-X6, and Y1-Y2 in Figure 30A.

[0429] As shown in Figure 30B, the display device 100G has light-emitting devices 130a, 130b, 130c, 130f, light-receiving devices 150d, and 150e on a layer 101 containing transistors, and a protective layer 131 is provided to cover these light-emitting and light-receiving devices. A substrate 120 is bonded to the protective layer 131 by a resin layer 119.

[0430] Light-emitting devices 130a, 130b, 130c, and 130f each emit light in different wavelength ranges. Preferably, light-emitting device 130f emits infrared (IR) light.

[0431] The light-emitting device 130f includes a pixel electrode 111f on layer 101 containing a transistor, a seventh layer 113f on the pixel electrode 111f, a sixth layer 114 on the seventh layer 113f, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130f, the seventh layer 113f and the sixth layer 114 can be collectively called the EL layer.

[0432] The seventh layer 113f includes a seventh hole injection layer 181f on the pixel electrode 111f, a seventh hole transport layer 182f on the seventh hole injection layer 181f, a fourth light-emitting layer 183f on the seventh hole transport layer 182f, and a seventh electron transport layer 184f on the fourth light-emitting layer 183f.

[0433] Detailed explanations of light-emitting devices 130a, 130b, 130c, light-receiving device 150d, and light-receiving device 150e can be found in the previously mentioned description, so a detailed explanation is omitted.

[0434] The method for manufacturing the display device 100G can be found in the description of the manufacturing method for the display device 100F mentioned above, so a detailed explanation is omitted. The light-emitting device 130f can be formed in the same manner as the light-emitting devices 130a to 130c. The order in which the light-emitting devices 130a, 130b, 130c, 130f, light-receiving device 150d, and light-receiving device 150e are formed is not particularly limited.

[0435] This embodiment can be combined with other embodiments as appropriate.

[0436] (Embodiment 4) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 31 and 32.

[0437] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0438] In this specification, a display device to which a connector such as a flexible printed circuit board (FPC) or TCP (Tape Carrier Package) is attached, or a display device to which an integrated circuit (IC) is mounted using the COG (Chip On Glass) method or COF (Chip On Film) method, may be referred to as a display panel module, display module, or simply a display panel.

[0439] [Display device 100H] Figure 31 shows a perspective view of the display device 100H, and Figure 32A shows a cross-sectional view of the display device 100H.

[0440] The display device 100H has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 31, substrate 152 is clearly indicated by a dashed line.

[0441] The display device 100H includes a display unit 162, a circuit 164, wiring 165, etc. Figure 31 shows an example in which IC 173 and FPC 172 are mounted on the display device 100H. Therefore, the configuration shown in Figure 31 can also be described as a display module having the display device 100H, an integrated circuit (IC), and an FPC.

[0442] Circuit 164 can, for example, be a scan line drive circuit.

[0443] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0444] Figure 31 shows an example in which IC 173 is provided on the substrate 151 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100H and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0445] Figure 32A shows an example of a cross-section obtained by cutting a portion of the display device 100H, including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, and a portion of the area including the end.

[0446] The display device 100H shown in Figure 32A has transistors 201, 205a, 205e, a light-emitting device 130a, and a light-receiving device 150e between substrates 151 and 152. The light-emitting device 130a emits, for example, red, green, or blue light. Alternatively, the light-emitting device 130a may emit infrared light. The light-receiving device 150e detects, for example, infrared light. Alternatively, the light-receiving device 150e may detect visible light, or it may detect both visible light and infrared light.

[0447] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting device that emits a different color from the others, examples of these three subpixels include subpixels of three colors: R, G, and B; and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0448] The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 32A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, indicating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), indicating a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0449] The light-emitting device 130a has a laminated structure similar to the light-emitting device 130a shown in Figure 25B, and the light-receiving device 150e has a laminated structure similar to the light-receiving device 150e shown in Figure 25B. Details of the light-emitting device and the light-receiving device can be found in Embodiment 3. Furthermore, the ends of the light-emitting device 130a and the ends of the light-receiving device 150e are covered by a protective layer 131.

[0450] The pixel electrodes 111a and 111e are connected to the conductive layer 222b of the transistors 205a and 205e, respectively, through openings provided in the insulating layer 214.

[0451] The ends of the pixel electrodes are covered by an insulating layer 121. The pixel electrodes contain a material that reflects visible light, while the common electrodes contain a material that transmits visible light.

[0452] The light emitted by the light-emitting device is projected onto the substrate 152. The light-receiving device detects the light incident from the substrate 152. Therefore, it is preferable to use a material with high transmittance to visible and infrared light for the substrate 152.

[0453] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 3.

[0454] Transistors 201, 205a, and 205e are all formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0455] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0456] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0457] Insulating layers 211, 213, and 215 are preferably made of inorganic insulating films. Examples of inorganic insulating films include silicon nitride, silicon oxide nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride. Alternatively, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may be used. Furthermore, two or more of the above-mentioned insulating films may be laminated together.

[0458] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100H. This prevents impurities from entering through the organic insulating film from the edge of the display device 100H. Alternatively, the organic insulating film may be formed so that its edge is inward from the edge of the display device 100H, so that the organic insulating film is not exposed at the edge of the display device 100H.

[0459] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0460] In the region 228 shown in Figure 32A, an opening is formed in the insulating layer 214. This prevents impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 100H can be improved.

[0461] Transistors 201, 205a, and 205e each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0462] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0463] Transistors 201, 205a, and 205e are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0464] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0465] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region. Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0466] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0467] In particular, it is preferable to use an oxide (also written as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer.

[0468] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio.

[0469] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0470] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0471] Figures 32B and 32C show other examples of transistor configurations.

[0472] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0473] In the transistor 209 shown in Figure 32B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0474] On the other hand, in the transistor 210 shown in Figure 32C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 32C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 32C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0475] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via a conductive layer 166 and a connecting layer 242. The conductive layer 166 is shown as an example of a conductive film obtained by processing the same conductive film as the pixel electrode. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and FPC 172 to be electrically connected via the connecting layer 242.

[0476] It is preferable to provide a light-shielding layer 148 on the surface of the substrate 152 that faces the substrate 151. Various optical components can also be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 152.

[0477] By providing a protective layer 131 that covers the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0478] In the region 228 near the edge of the display device 100H, it is preferable that the insulating layer 215 and the protective layer 131 are in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating films are in contact with each other. This makes it possible to suppress the entry of impurities into the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100H can be improved.

[0479] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 151 or substrate 152.

[0480] Substrates 151 and 152 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 151 and 152 may be made of glass of a thickness sufficient to provide flexibility.

[0481] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0482] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0483] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0484] When using a film as a substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0485] The adhesive layer can be made from various types of curing adhesives, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0486] The connecting layer 242 can be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0487] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0488] As a translucent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be translucent. Furthermore, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes constituting display devices, and as conductive layers in light-emitting devices (conductive layers that function as pixel electrodes or common electrodes).

[0489] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0490] This embodiment can be combined with other embodiments as appropriate.

[0491] (Embodiment 5) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0492] The light-emitting device shown in Figure 33A has an electrode 772, an EL layer 786, and an electrode 788. Of the electrodes 772 and 788, one functions as an anode and the other as a cathode. Furthermore, of the electrodes 772 and 788, one functions as a pixel electrode and the other functions as a common electrode. Preferably, of the electrodes 772 and 788, the electrode that extracts light is transparent to visible light, and the other electrode reflects visible light.

[0493] The EL layer 786 of the light-emitting device can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430, as shown in Figure 33A. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may contain, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0494] A configuration having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and in this specification, the configuration shown in Figure 33A is referred to as a single structure.

[0495] Figure 33B shows a modified example of the EL layer 786 of the light-emitting device shown in Figure 33A. Specifically, the light-emitting device shown in Figure 33B has a layer 4430-1 on electrode 772, a layer 4430-2 on layer 4430-1, a light-emitting layer 4411 on layer 4430-2, a layer 4420-1 on light-emitting layer 4411, a layer 4420-2 on layer 4420-1, and an electrode 788 on layer 4420-2. For example, when electrode 772 is the anode and electrode 788 is the cathode, layer 4430-1 functions as a hole injection layer, layer 4430-2 functions as a hole transport layer, layer 4420-1 functions as an electron transport layer, and layer 4420-2 functions as an electron injection layer. Alternatively, if electrode 772 is used as the cathode and electrode 788 as the anode, layer 4430-1 functions as an electron injection layer, layer 4430-2 functions as an electron transport layer, layer 4420-1 functions as a hole transport layer, and layer 4420-2 functions as a hole injection layer. This layer structure allows for efficient injection of carriers into the light-emitting layer 4411, thereby increasing the efficiency of carrier recombination within the light-emitting layer 4411.

[0496] As shown in Figure 33C, a configuration in which multiple light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0497] As shown in Figure 33D, a configuration in which multiple light-emitting units (EL layers 786a and EL layers 786b) are connected in series via an intermediate layer 4440 (also called a charge generation layer) is referred to as a tandem structure in this specification. However, it is not limited to this, and for example, the tandem structure may also be called a stack structure. Furthermore, by using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0498] Furthermore, in Figures 33C and 33D, as shown in Figure 33B, layer 4420 and layer 4430 can each be a laminated structure consisting of two or more layers.

[0499] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 786. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0500] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in the light-emitting layer. When a configuration includes two light-emitting materials, the materials should be selected such that the light emitted from each material is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary in color, a light-emitting device that emits white light as a whole can be obtained. When a configuration includes three or more light-emitting materials, a configuration that emits white light can be achieved by mixing the light-emitting colors of each material. The same applies to light-emitting devices that have two or more light-emitting layers. For example, a single-structure white light-emitting device can be realized by mixing the light-emitting colors of light-emitting layers 4411, 4412, and 4413 shown in Figure 33C.

[0501] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0502] [Differential examples of display devices] Figures 34 to 37 illustrate an example of the configuration of a light-emitting device.

[0503] Figure 34A shows a schematic cross-sectional view of the display device 500. The display device 500 includes a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, and a light-emitting device 550B that emits blue light. In this embodiment, the description of the light-receiving device of the display device is omitted.

[0504] The light-emitting device 550R has a configuration in which two light-emitting units (light-emitting unit 512R_1, light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501, electrode 502) with an intermediate layer 531 in between. Similarly, the light-emitting device 550G has light-emitting unit 512G_1, light-emitting unit 512G_2, and the light-emitting device 550B has light-emitting unit 512B_1, light-emitting unit 512B_2.

[0505] Electrode 501 functions as a pixel electrode and is provided for each light-emitting device. Electrode 502 functions as a common electrode and is provided in common to multiple light-emitting devices.

[0506] The light-emitting unit 512R_1 has layers 521, 522, light-emitting layer 523R, layer 524, etc. The light-emitting unit 512R_2 has layers 522, light-emitting layer 523R, layer 524, etc. The light-emitting device 550R has layers 525, etc. between the light-emitting unit 512R_2 and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512R_2.

[0507] Layer 521 includes, for example, a layer containing a material with high hole injection capabilities (hole injection layer). Layer 522 includes, for example, a layer containing a material with high hole transport capabilities (hole transport layer). Layer 524 includes, for example, a layer containing a material with high electron transport capabilities (electron transport layer). Layer 525 includes, for example, a layer containing a material with high electron injection capabilities (electron injection layer).

[0508] Alternatively, the configuration may include layer 521 having an electron injection layer, layer 522 having an electron transport layer, layer 524 having a hole transport layer, and layer 525 having a hole injection layer.

[0509] Note that layer 522, light-emitting layer 523R, and layer 524 may have the same configuration (material, film thickness, etc.) in light-emitting unit 512R_1 and light-emitting unit 512R_2, or they may have different configurations.

[0510] In Figure 34A, layers 521 and 522 are shown separately, but the design is not limited to this. For example, if layer 521 has the functions of both a hole injection layer and a hole transport layer, or if layer 521 has the functions of both an electron injection layer and an electron transport layer, layer 522 may be omitted.

[0511] The intermediate layer 531 has the function of injecting electrons into one of the light-emitting units 512R_1 and 512R_2 and holes into the other when a voltage is applied between the electrodes 501 and 502. The intermediate layer 531 can also be called a charge generation layer.

[0512] The intermediate layer 531 can preferably be made of a material applicable to the electron injection layer, such as lithium fluoride. Alternatively, the intermediate layer can preferably be made of a material applicable to the hole injection layer. Furthermore, the intermediate layer can contain a hole transport material and an acceptor material (electron-accepting material). Alternatively, the intermediate layer can contain an electron transport material and a donor material. By forming an intermediate layer having such a layer, the increase in driving voltage when light-emitting units are stacked can be suppressed.

[0513] The light-emitting layer 523R of the light-emitting device 550R contains a light-emitting material that emits red light, the light-emitting layer 523G of the light-emitting device 550G contains a light-emitting material that emits green light, and the light-emitting layer 523B of the light-emitting device 550B contains a light-emitting material that emits blue light. The light-emitting devices 550G and 550B have a configuration in which the light-emitting layer 523R of the light-emitting device 550R is replaced with the light-emitting layer 523G and the light-emitting layer 523B, respectively, and the other configurations are the same as those of the light-emitting device 550R.

[0514] Note that layers 521, 522, 524, and 525 may have the same configuration (material, film thickness, etc.) for each color of light-emitting device, or they may have different configurations from each other.

[0515] In this specification, a configuration in which multiple light-emitting units are connected in series via an intermediate layer 531, such as light-emitting devices 550R, 550G, and 550B, is referred to as a tandem structure. On the other hand, a configuration in which one light-emitting unit is located between a pair of electrodes is referred to as a single structure. In this specification, the term "tandem structure" is used, but the specification is not limited to this, and for example, a tandem structure may also be called a stacked structure. By using a tandem structure, it is possible to create a light-emitting device that can emit light with high brightness. Furthermore, compared to a single structure, a tandem structure can reduce the current required to obtain the same brightness, thus improving reliability.

[0516] Structures in which the light-emitting layer is made differently for each light-emitting device, such as light-emitting devices 550R, 550G, and 550B, are sometimes called SBS (Side By Side) structures. Because SBS structures allow for the optimization of materials and configurations for each light-emitting device, the degree of freedom in selecting materials and configurations increases, making it easier to improve brightness and reliability.

[0517] The display device 500 can be said to have both a tandem structure and an SBS structure. Therefore, it can combine the advantages of both a tandem structure and an SBS structure. As shown in Figure 34A, the display device 500 has a structure in which two light-emitting units are formed in series, so it may also be called a two-stage tandem structure. In the two-stage tandem structure shown in Figure 34A, a second light-emitting unit having a red light-emitting layer is stacked on top of a first light-emitting unit having a red light-emitting layer. Similarly, in the two-stage tandem structure shown in Figure 34A, a second light-emitting unit having a green light-emitting layer is stacked on top of a first light-emitting unit having a green light-emitting layer, and a second light-emitting unit having a blue light-emitting layer is stacked on top of a first light-emitting unit having a blue light-emitting layer.

[0518] In Figure 34A, the light-emitting unit 512R_1, the intermediate layer 531, the light-emitting unit 512R_2, and the layer 525 can be formed as island-like layers. Also, the light-emitting unit 512G_1, the intermediate layer 531, the light-emitting unit 512G_2, and the layer 525 can be formed as island-like layers. The light-emitting unit 512B_1, the intermediate layer 531, the light-emitting unit 512B_2, and the layer 525 can be formed as island-like layers. In other words, the layer 113 shown in Figure 34A corresponds to the first layer 113a, the second layer 113b, or the third layer 113c shown in Figure 25B, etc.

[0519] Figure 34B shows a modified version of the display device 500 shown in Figure 34A. The display device 500 shown in Figure 34B is an example in which layer 525 is provided in common among each light-emitting device, similar to the electrode 502. In this case, layer 525 can be called a common layer. By providing one or more common layers to multiple light-emitting devices in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced.

[0520] In Figure 34A, the light-emitting unit 512R_1, the intermediate layer 531, and the light-emitting unit 512R_2 can be formed as island-like layers. Similarly, the light-emitting unit 512G_1, the intermediate layer 531, and the light-emitting unit 512G_2 can be formed as island-like layers. The light-emitting unit 512B_1, the intermediate layer 531, and the light-emitting unit 512B_2 can also be formed as island-like layers. In other words, layer 113 shown in Figure 34B corresponds to the first layer 113a, the second layer 113b, or the third layer 113c shown in Figure 25B, etc. Also, layer 525 corresponds to the sixth layer 114 shown in Figure 25B. In Figures 35 to 37, layers corresponding to the first layer 113a, the second layer 113b, or the third layer 113c shown in Figure 25B, etc., are also shown as layer 113.

[0521] The display device 500 shown in Figure 35A is an example of a case where three light-emitting units are stacked. In Figure 35A, the light-emitting device 550R has a light-emitting unit 512R_3 stacked on top of a light-emitting unit 512R_2 via an intermediate layer 531. The light-emitting unit 512R_3 has layers 522, light-emitting layer 523R, layer 524, etc. The same configuration can be applied to the light-emitting unit 512R_3 as to the light-emitting unit 512R_2. The same applies to the light-emitting unit 512G_3 of the light-emitting device 550G and the light-emitting unit 512B_3 of the light-emitting device 550B.

[0522] Figure 35B shows an example where n light-emitting units (where n is an integer greater than or equal to 2) are stacked.

[0523] In this way, by increasing the number of stacked light-emitting units, the brightness obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacks. Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same brightness can be reduced, thus reducing the power consumption of the light-emitting device in proportion to the number of stacks.

[0524] The display device 500 shown in Figure 36A illustrates an example where two adjacent light-emitting devices are spaced apart, and the electrodes 502 are provided along the sides of the light-emitting unit and the intermediate layer 531.

[0525] In this case, if the intermediate layer 531 and the electrode 502 come into contact, an electrical short circuit may occur. Therefore, it is preferable to insulate the intermediate layer 531 and the electrode 502.

[0526] Figure 36A shows an example in which an insulating layer 541 is provided covering the sides of the electrode 501, each light-emitting unit, and the intermediate layer 531. The insulating layer 541 can be called a sidewall, sidewall protective layer, or sidewall insulating film. By providing the insulating layer 541, the intermediate layer 531 and the electrode 502 can be electrically insulated.

[0527] The sides of each light-emitting unit and the intermediate layer 531 are preferably perpendicular or approximately perpendicular to the surface to be formed. For example, the angle between the surface to be formed and these sides is preferably 60 degrees or more and 90 degrees or less.

[0528] Figure 36B shows an example in which layer 525 and electrode 502 are provided along the sides of the light-emitting unit and intermediate layer 531. Furthermore, a two-layer structure of insulating layer 541 and insulating layer 542 is provided as a sidewall protective layer.

[0529] Figure 37A is a modified example of Figure 36B. Figure 37B is an enlarged view of the region 503 shown in Figure 37A. Figure 37A and Figure 36B differ in the shape of the edges of the insulating layer 542. Furthermore, because the shape of the edges of the insulating layer 542 is different, and the layer 525 and electrode 502 are formed along the shape of the insulating layer 542, the shapes of the layer 525 and electrode 502 are also different. In addition, Figure 37A differs from Figure 36B in that the thickness of the insulating layer 542 is greater than the thickness of the insulating layer 541. The shape of the edges of the insulating layer 542 can be rounded, as shown in Figure 37B. For example, when forming the insulating layer 542, if a dry etching method is used and the upper part of the insulating layer 542 is etched by anisotropic etching, the edges of the insulating layer 542 will be rounded, as shown in Figure 37B. Rounding the shape of the edges of the insulating layer 542 is preferable because it improves the coverage of the layer 525 and electrode 502. As shown in Figures 37A and 37B, making the thickness of the insulating layer 542 greater than the thickness of the insulating layer 541 can make it easier to create a rounded shape at the edges.

[0530] The insulating layer 541 (and insulating layer 542), which functions as a sidewall protective layer, prevents electrical short circuits between the electrode 502 and the intermediate layer 531. Furthermore, by covering the sides of the electrode 501, the insulating layer 541 (and insulating layer 542) prevents electrical short circuits between the electrode 501 and the electrode 502. This prevents electrical short circuits at the corners located at the four corners of the light-emitting device.

[0531] It is preferable to use inorganic insulating films for insulating layer 541 and insulating layer 542, respectively. For example, oxides or nitrides such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide can be used. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0532] The insulating layer 541 and insulating layer 542 can be formed by various film deposition methods, such as sputtering, vapor deposition, CVD, and ALD. In particular, since the ALD method causes little film deposition damage to the layer to be formed, it is preferable to form the insulating layer 541, which is directly formed on the light-emitting unit and the intermediate layer 531, using the ALD method. Furthermore, it is preferable to form the insulating layer 542 by sputtering in this case, as this can increase productivity.

[0533] For example, an aluminum oxide film formed by the ALD method can be used for the insulating layer 541, and a silicon nitride film formed by the sputtering method can be used for the insulating layer 542.

[0534] Preferably, one or both of the insulating layer 541 and insulating layer 542 function as a barrier insulating film against at least one of water and oxygen. Alternatively, preferably, one or both of the insulating layer 541 and insulating layer 542 have a function to suppress the diffusion of at least one of water and oxygen. Alternatively, preferably, one or both of the insulating layer 541 and insulating layer 542 have a function to capture or fix (also called gettering) at least one of water and oxygen.

[0535] In this specification, a barrier insulating film refers to an insulating film that has barrier properties. In this specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (also called low permeability), or the function of capturing or fixing the corresponding substance (also called gettering).

[0536] The insulating layer 541 and the insulating layer 542, or both, have the functions of the barrier insulating film or gettering function described above, thereby suppressing the intrusion of impurities (typically water or oxygen) that could diffuse from the outside into each light-emitting device. This configuration makes it possible to provide a display device with excellent reliability.

[0537] As shown in Figure 37C, the configuration may also be one that does not have insulating layers 541 and 542 that function as sidewall protective layers. In Figure 37C, layer 525 is provided in contact with the side surfaces of each light-emitting unit and the intermediate layer 531.

[0538] In addition, the light-emitting material of the light-emitting layer in the display device 500 is not particularly limited. For example, in the display device 500 shown in Figure 34A, the light-emitting layer 523R of the light-emitting unit 512R_1 has a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 has a fluorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 has a fluorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 has a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 has a fluorescent material.

[0539] Alternatively, in the display device 500 shown in Figure 34A, the light-emitting layer 523R of the light-emitting unit 512R_1 has a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 has a phosphorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 has a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 has a fluorescent material.

[0540] Furthermore, in one embodiment of the present invention, the display device may be configured such that all light-emitting layers are made of fluorescent material, or so that all light-emitting layers are made of phosphorescent material.

[0541] Alternatively, in the display device 500 shown in Figure 34A, the light-emitting layer 523R of light-emitting unit 512R_1 may be made of a phosphorescent material and the light-emitting layer 523R of light-emitting unit 512R_2 may be made of a fluorescent material, or the light-emitting layer 523R of light-emitting unit 512R_1 may be made of a fluorescent material and the light-emitting layer 523R of light-emitting unit 512R_2 may be made of a phosphorescent material, that is, the light-emitting materials of the first stage light-emitting layer and the second stage light-emitting layer may be made of different materials. Although the description here specifies light-emitting units 512R_1 and 512R_2, the same configuration can be applied to light-emitting units 512G_1 and 512G_2, and light-emitting units 512B_1 and 512B_2.

[0542] This embodiment can be combined with other embodiments as appropriate.

[0543] (Embodiment 6) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0544] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0545] Metal oxides can be formed by chemical vapor deposition (CVD) methods such as sputtering, metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0546] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0547] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0548] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0549] The crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0550] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0551] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0552] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0553] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0554] In In-M-Zn oxide (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. The In layer may also contain element M. The In layer may also contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0555] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0556] For example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0557] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction, and the bond distance between atoms changes due to the substitution of metal atoms.

[0558] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0559] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0560] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0561] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0562] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0563] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0564] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0565] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0566] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0567] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0568] In in-Ga-Zn oxides, CAC-OS refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like fashion, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which the metal elements are unevenly distributed.

[0569] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Furthermore, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be as low as possible. For example, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0570] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0571] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0572] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0573] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0574] Transistors using CAC-OS are highly reliable. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0575] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0576] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0577] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0578] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0579] High-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect level density, which may result in a low trap level density.

[0580] Charges trapped in the trap levels of oxide semiconductors can take a long time to disappear and sometimes behave like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high density of trap levels may exhibit unstable electrical properties.

[0581] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0582] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0583] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0584] When alkali metals or alkaline earth metals are present in oxide semiconductors, they can form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0585] In oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. This can result in unstable electrical properties of the transistor. Therefore, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻¹⁰. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0586] Hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. When hydrogen fills these vacancies, electrons, which act as carriers, can be generated. Furthermore, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0587] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0588] This embodiment can be combined with other embodiments as appropriate.

[0589] (Embodiment 7) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 38 to 40.

[0590] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0591] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0592] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0593] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0594] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0595] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0596] The electronic device 6500 shown in Figure 38A is a portable information terminal that can be used as a smartphone.

[0597] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0598] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0599] Figure 38B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0600] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0601] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0602] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0603] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0604] Figure 39A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0605] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0606] The television device 7100 shown in Figure 39A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0607] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0608] Figure 39B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0609] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0610] Figures 39C and 39D show examples of digital signage.

[0611] The digital signage 7300 shown in Figure 39C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0612] Figure 39D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0613] In Figures 39C and 39D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0614] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0615] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0616] As shown in Figures 39C and 39D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411, such as a smartphone, owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0617] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0618] The electronic equipment shown in Figures 40A to 40F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0619] The electronic devices shown in Figures 40A to 40F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0620] Details of the electronic equipment shown in Figures 40A to 40F will be explained below.

[0621] Figure 40A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 40A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0622] Figure 40B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0623] Figure 40C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0624] Figures 40D to 40F are perspective views showing a foldable personal information terminal 9201. Figure 40D shows the personal information terminal 9201 in an unfolded state, Figure 40F shows it in a folded state, and Figure 40E shows a perspective view of the state in between, transitioning from one of Figures 40D or 40F to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0625] A display device and electronic device according to one aspect of the present invention can be incorporated into the interior or exterior walls of a house or building, or into the interior or exterior of a vehicle.

[0626] Figure 41 shows an example of a display device according to one aspect of the present invention mounted on a vehicle. In the vehicle shown in Figure 41, display devices 5000a, 5000b, and 5000c are mounted on the dashboard 5002. In addition, display device 5000d is mounted on the ceiling 5004 on the driver's side. Although Figure 41 shows an example in which display device 5000d is mounted on a right-hand drive vehicle, it is not particularly limited and can also be mounted on a left-hand drive vehicle. In this case, the left and right arrangement of the configuration shown in Figure 41 will be reversed. Figure 41 shows the steering wheel 5006, windshield 5008, etc., which are arranged around the driver's seat and passenger seat.

[0627] Preferably, one or more of the display devices 5000a to 5000d have a near-touch sensor function. Having a near-touch sensor function allows the user to operate the display device without staring at it. In particular, the driver can operate the display device without significantly diverting their gaze from the road ahead, thereby improving safety while driving and when stopped. The diagonal length of the display area of ​​the display devices 5000a to 5000d is preferably 5 inches or more, preferably 10 inches or more. For example, a display device with a diagonal length of approximately 13 inches can be suitably used as the display devices 5000a to 5000d.

[0628] Furthermore, the display devices 5000a to 5000d may be flexible. Flexibility allows them to be incorporated along curved surfaces, even when the object they are incorporated into is curved. For example, the display devices can be configured to follow the curved surface of a dashboard 5002 or ceiling 5004.

[0629] Multiple cameras 5005 may be installed outside the vehicle. By installing cameras 5005, the surrounding area of ​​the vehicle, for example, the rear and side, can be photographed. Figure 41 shows an example in which cameras 5005 are installed instead of side mirrors, but both side mirrors and cameras may be installed.

[0630] Camera 5005 can use a CCD camera or a CMOS camera, etc. In addition to these cameras, an infrared camera may be used in combination. Since the output level of an infrared camera increases with the temperature of the subject, it can detect or extract living organisms such as people or animals.

[0631] Images captured by camera 5005 can be output to one or more of the display devices 5000a to 5000d. Display devices 5000a to 5000d are primarily used to assist in driving the vehicle. Camera 5005 captures the situation to the rear and sides with a wide field of view, and by displaying these images on one or more of the display devices 5000a to 5000d, the driver's blind spots can be made visible, thus preventing accidents.

[0632] A distance image sensor may be installed on the roof of the vehicle, and the images obtained by the distance image sensor may be displayed on one or more of the display devices 5000a to 5000d. The distance image sensor can be an image sensor or a LiDAR (Light Detection and Ranging) sensor. By displaying images obtained by the image sensor and images obtained by the distance image sensor on one or more of the display devices 5000a to 5000d, more information can be provided to the driver, and driving can be supported.

[0633] One or more of the display devices 5000a to 5000d may have a function for displaying map information, traffic information, television images, DVD images, etc.

[0634] It is preferable that at least one of the display devices 5000a to 5000d is fitted with a display panel having an imaging function. For example, by the driver touching the display panel, the vehicle can perform biometric authentication such as fingerprint authentication or palm print authentication. The vehicle may also have a function to adjust the environment to the driver's preferences once the driver has been authenticated by biometric authentication. For example, it is preferable to perform one or more actions after authentication, such as adjusting the seat position, adjusting the steering wheel position, adjusting the orientation of the camera 5005, setting the brightness, setting the air conditioning, setting the wiper speed (frequency), setting the audio volume, and reading the audio playlist.

[0635] When the driver is authenticated by biometric authentication, the vehicle can be put into a drivable state, such as with the engine running, eliminating the need for a key, which is preferable.

[0636] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0637] AL: Wiring, C11: Capacitance, CDB: Wiring, CL: Wiring, EL: Light-emitting device, ELB: Light-emitting device, ELG: Light-emitting device, ELR: Light-emitting device, IVB: Wiring, M11: Transistor, M12: Transistor, M13: Transistor, M14: Transistor, M15: Transistor, PD1: Light-receiving device, PD2: Light-receiving device, RE[i+1]: Wiring, RE[i]: Wiring, RE[k]: Wiring, RE: Wiring, RS[i+1]: Wiring, RS[i]: Wiring, RS: Wiring, SCL: Wiring, SE[i+1]: Wiring, SE[i]: Wiring, SE[k]: Wiring, SE: Wiring, SFB: Wiring, SFR: Wiring, SH: Node, SL: Wiring, SLB[j+1]: Wiring, SLB[j]: Wiring, SLB: Wiring, SLG[j+1]: Wiring, SLG[j]: Wiring, SLG: Wiring, SLR[j+1]: Wiring, SLR[j]: Wiring, SLR: Wiring, S OUT:Signal, SW[i+1]: Wiring, SW[i]: Wiring, SW[k]: Wiring, SW: Wiring, T11: Time, T12: Time, T13: Time, T14: Time, T21: Time, T22: Time, T23: Time, T24: Time, T31: Time, T32: Time, T33: Time, T34: Time, T 41: Time, T42: Time, T43: Time, T44: Time, T51: Time, TX[i+1]: Wiring, TX[i]: Wiring, TX[k]: Wiring, TX: Wiring, VCL: Wiring, VCP: Wiring, VIV: Wiring, VPI: Wiring, VRS: Wiring, VRSF: Wiring, WX[j+1]: Wiring, WX [j]: Wiring, WX: Wiring, 10: Display device, 11A: Display unit, 11B: Display unit, 11C: Display unit, 11D: Display unit, 11E: Display unit, 11: Display unit, 12: Drive circuit unit, 13: Drive circuit unit, 14: Drive circuit unit, 15: Circuit unit, 21B: Pixel circuit, 21B[i+1,j+1]: Pixel circuit, 21B[i+1,j]: Pixel circuit, 21B[i,j+1]: Pixel circuit, 21B[i,j]: Pixel circuit, 21G: Pixel circuit, 21G[i+1,j+1]: Pixel circuit, 21G[i,j]: Pixel circuit, 2 1IR: Pixel circuit, 21R: Pixel circuit, 21R[i+1,j+1]: Pixel circuit, 21R[i+1,j]: Pixel circuit, 21R[i,j+1]: Pixel circuit, 21R[i,j]: Pixel circuit, 21: Pixel circuit, 22[i+1,j+1]: Pixel circuit, 22[i+1,j]: Pixel circuit, 22[i,j+1]: Pixel circuit, 22[i,j]: Pixel circuit, 22[k,j+1]: Pixel circuit, 22[k,j]: Pixel circuit, 22: Pixel circuit, 30[i+1,j+1]: Pixel, 30[i+1,j]: Pixel, 30[i,j+1]: Pixel, 30[i,j]: Pixel, 30: Pixel, 31B: Light ,31G: light, 31IR: infrared light, 31R: light, 32G: reflected light, 32IR: reflected light, 32R: light, 50: circuit, 51[j]: circuit, 51: circuit, 52[j]: circuit, 52: circuit, 53[j]: circuit, 53: circuit, 54: circuit, 55: circuit, 56: circuit, 61: transistor, 62: transistor, 63: transistor, 64: transistor, 65: transistor, 66: transistor, 67: transistor, 68: transistor, 69: transistor, 71: transistor, 72: transistor, 73: transistor, 74: transistor, 81: capacitance,82: Capacity, 83: Capacity, 84: Capacity, 91: Blood vessel, 93: Biological tissue, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100H: Display device, 100: Display device, 101: Layer, 102: Substrate, 103: Housing, 104: Light source, 105: Protective member, 106: Substrate, 108: Object, 110a: Sub-pixel, 110A: Pixel, 110b: Sub-pixel, 110c: Sub-pixel, 110d: Sub-pixel, 110e: Sub-pixel, 110f: Sub-pixel, 110: Pixel, 111a: Image Elementary electrode, 111b: pixel electrode, 111c: pixel electrode, 111d: pixel electrode, 111e: pixel electrode, 111f: pixel electrode, 113a: first layer, 113b: second layer, 113c: third layer, 113d: fourth layer, 113e: fifth layer, 113f: seventh layer, 113: layer, 114: sixth layer, 115: common electrode, 118A: first sacrificial layer, 118a: first sacrificial layer, 118B: first sacrificial layer, 118b: first sacrificial layer, 118c: first sacrificial layer, 118d: first sacrificial layer, 118e: first sacrificial layer, 119A: second sacrificial layer, 119a: second sacrificial layer, 1 19B: Second sacrificial layer, 119b: Second sacrificial layer, 119c: Second sacrificial layer, 119d: Second sacrificial layer, 119e: Second sacrificial layer, 119: Resin layer, 120: Substrate, 121: Insulating layer, 123: Conductive layer, 130a: Light-emitting device, 130B: Light-emitting device, 130b: Light-emitting device, 130c: Light-emitting device, 130f: Light-emitting device, 130G: Light-emitting device, 130IR: Light-emitting device, 130R: Light-emitting device, 131: Protective layer, 133: Void, 140: Connection part, 142: Adhesive layer, 148: Light-shielding layer, 150d: Light-receiving device, 150e: Light-receiving device 150IRS: light receiving device, 150PS: light receiving device, 151: substrate, 152: substrate, 162: display unit, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180A: pixel, 180B: pixel, 180C: pixel, 180D: pixel, 181A: first hole injection layer, 181a: first hole injection layer, 181B: second hole injection layer, 181b: second hole injection layer, 181c: third hole injection layer, 181f: seventh hole injection layer, 182A: first hole transport layer, 182a: first hole transport layer, 182B: second hole transport layer,182b: Second hole transport layer, 182c: Third hole transport layer, 182d: Fourth hole transport layer, 182e: Fifth hole transport layer, 182f: Seventh hole transport layer, 183A: First light-emitting layer, 183a: First light-emitting layer, 183B: Second light-emitting layer, 183b: Second light-emitting layer, 183c: Third light-emitting layer, 183f: Fourth light-emitting layer, 184A: First electron transport layer, 184a: First electron transport layer, 184B: Second electron transport layer, 184b: Second electron transport layer, 184c: Third electron transport layer, 184d: Fourth electron transport layer, 184e: Fifth electron transport layer, 184f: Seventh Electron transport layer, 185d: First active layer, 185e: Second active layer, 190a: Resist mask, 190b: Resist mask, 201: Transistor, 204: Connection, 205a: Transistor, 205e: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 242: Connection 400: Mobile information terminal, 402: Housing, 404: Display unit, 406: Finger, 408: Area, 410: Area, 412: Image, 500: Display device, 501: Electrode, 502: Electrode, 503: Area, 512B_1: Light-emitting unit, 512B_2: Light-emitting unit, 512B_3: Light-emitting unit, 512G_1: Light-emitting unit, 512G_2: Light-emitting unit, 512G_3: Light-emitting unit, 512R_1: Light-emitting unit, 512R_2: Light-emitting unit, 512R_3: Light-emitting unit, 521: Layer, 522: Layer, 523B: Light-emitting layer, 523G: Light-emitting layer, 523R: Light Light layer, 524: layer, 525: layer, 531: intermediate layer, 541: insulating layer, 542: insulating layer, 550B: light-emitting device, 550G: light-emitting device, 550R: light-emitting device, 772: electrode, 786a: EL layer, 786b: EL layer, 786: EL layer, 788: electrode, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4430: layer, 4440: intermediate layer, 5000a: display device, 5000b: display device, 5000c: display device, 5000d: display device, 5002: dashboard, 5004: ceiling, 5005: camera, 5006: steering wheel,5008: Windshield, 6500: Electronic equipment, 6501: Enclosure, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

[Claim 1] Having multiple pixels, The aforementioned pixel has a first pixel circuit, The first pixel circuit comprises a first light-receiving device, a second light-receiving device, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, The other electrode of the first light-receiving device is electrically connected to either the source or the drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, The other electrode of the second light-receiving device is electrically connected to either the source or the drain of the second transistor. The other of the source or drain of the second transistor is electrically connected to the other of the source or drain of the first transistor. The source or drain of the first transistor is electrically connected to one electrode of the capacitance. The source or drain of the first transistor is electrically connected to the source or drain of the third transistor. The source or drain of the first transistor, the other of which is electrically connected to the gate of the fourth transistor, A semiconductor device in which the source or drain of the fourth transistor is electrically connected to the source or drain of the fifth transistor.

Images