Damage reduction methods

Abstract

This invention provides a method for transferring data to a carrier substrate when the pixel pitch of a display is not an integer multiple of the pitch of optical devices arranged on a sapphire substrate. [Solution] The ratio of the moving speeds of the donor substrate and the receptor substrate is determined from the array pitch (3, 4) of the optical devices (2) formed on the sapphire substrate and the array pitch (5, 7) of the optical devices to be transferred onto the carrier substrate (6). By lifting (laser transfer) in synchronization with the movement of the donor substrate, the optical devices on the sapphire substrate are transferred to the carrier substrate with the same array pitch as the pixel pitch of the display.

Description

[Technical Field]

[0001] Regarding the mounting process for microLEDs. [Background technology]

[0002] In recent years, nitride semiconductor optical devices have come into use as backlights for liquid crystal displays and for signage displays. These applications require the simultaneous use of a large number of optical devices, thus demanding high-speed transfer technology. Generally, stamp-type batch transfer is used as the high-speed transfer technology, enabling the transfer of 1,000 to tens of thousands of devices at once.

[0003] Optical devices are mass-produced on sapphire substrates using semiconductor processes, and millions of micro-LEDs, which are less than 100 μm square, can be found on a 4-inch substrate. These micro-LEDs, which are tiny devices measuring tens of micrometers, are separated from the sapphire substrate (an epitaxial substrate) before use. It is common practice to attach support substrates to the optical devices arranged on the sapphire substrate and then separate them from the sapphire substrate by laser lift-off.

[0004] A support board or a board on which optical devices have been transferred from a support board is used as the carrier board. Using a special stamp, the optical devices are picked up from the carrier board at intervals corresponding to the pixel pitch of the display and mounted onto the backplane board. Therefore, the pitch of the optical devices on the sapphire substrate must be 1 / N times the pixel pitch of the display, where N is a positive integer.

[0005] Patent Document 1 describes laser lift-off of nitride semiconductors from sapphire substrates. Patent Documents 2 and 3 propose high-speed mounting using different stamping methods. Patent Document 4 describes a lifting device for lifting from a donor substrate to a receptor substrate. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Special Publication No. 2007-534164 [Patent Document 2] Japanese Patent Publication No. 2020-129638 [Patent Document 3] Japanese Patent Publication No. 2018-163900 [Patent Document 4] Japanese Patent Publication No. 2020-004478 [Overview of the project] [Problems that the invention aims to solve]

[0007] However, the pixel pitch of a display varies depending on the display size and resolution (such as 4K or 8K), and preparing the pitch of optical devices on a sapphire substrate to match the pixel pitch hinders mass production of optical devices and increases costs. This is a common challenge for panel-type devices using laser diodes and photodiode elements as well.

[0008] The present invention is a method for solving the above-mentioned problem, which occurs when the pixel pitch of a display or the like does not satisfy a positive integer multiple of the pitch of an optical device. [Means for solving the problem]

[0009] The first invention according to the present invention involves lifting (LIFT: Laser Induced Forward) an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate. A method for transferring optical devices, comprising the steps of: acquiring a reference position D and an array pitch D of an array of optical devices formed on a sapphire substrate; acquiring a reference position R and an array pitch R of an array of optical devices to be transferred to a carrier substrate by lift; adjusting the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical devices to the carrier substrate is a predetermined value, by facing the sapphire substrate and the carrier substrate based on the reference position D and reference position R; calculating the scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and array pitch R; irradiating the interface between the sapphire substrate and the optical devices with laser light from the back side of the sapphire substrate toward a plurality of optical devices arranged in a line; aligning the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on the reference position D and reference position R, and scanning the sapphire substrate and the carrier substrate at the speed ratio VR; and irradiating with laser light and lifting in conjunction with the scanning operation. Here, "optical device" includes laser diodes and photodiodes to the extent that the above processes can be utilized.

[0010] The second invention is a lifting method that, in the first invention, further includes the steps of: lifting an optical device on a sapphire substrate to a carrier substrate with a speed ratio of VRY; rotating the carrier substrate 90 degrees horizontally with respect to the scanning direction and mounting it as a donor substrate in place of the sapphire substrate; and lifting the optical device on the sapphire substrate to a carrier substrate with a speed ratio of VRY; and then lifting the optical device on the sapphire substrate to a second carrier substrate with a speed ratio of VRX.

[0011] The third invention is a lifting method that, in the second invention, wherein the irradiation of the laser light is a reduction projection using a photomask, and the photomask has a first aperture which corresponds to approximately one optical device in the Y direction and two or more optical devices with an array pitch DX in the X direction, and a second aperture which corresponds to approximately one optical device in the X direction and two or more optical devices with an array pitch RY in the Y direction, and further includes the step of switching the mask so that the first aperture is used when lifting at a speed ratio VRY and the second aperture is used when lifting at a speed ratio VRX.

[0012] The fourth invention is a lift method in the third invention, wherein the apertures of the photomask are a group of apertures that irradiate individual optical devices in a shape substantially that of the optical devices.

[0013] The fifth invention is a lifting device for lifting an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate, comprising: a first processing unit that acquires a reference position D and an array pitch D of the array of optical devices formed on the sapphire substrate; a second processing unit that acquires a reference position R and an array pitch R of the array of optical devices to be transferred to the carrier substrate by lifting; and a stay that, based on the reference position D and reference position R, faces the sapphire substrate and the carrier substrate and adjusts the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value. The lift device includes a stage controller, a third processing unit that calculates the scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and array pitch R, a reduction projection optical system that irradiates a laser beam from the back side of the sapphire substrate toward a plurality of optical devices arranged in a row toward the interface between the sapphire substrate and the optical devices, a stage and stage controller that aligns the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on the reference position D and reference position R, and scans the sapphire substrate and the carrier substrate at the speed ratio VR, and a laser device that irradiates laser beam in conjunction with the scanning operation.

[0014] The sixth invention is a method of lifting micro-elements on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer. The method includes the steps of: obtaining the three-dimensional size of the micro-elements arranged on the donor substrate, the reference position D of the arrangement, and the arrangement pitch D; obtaining the reference position R and the arrangement pitch R of the arrangement of the micro-elements to be mounted by lifting onto the receptor substrate; based on the reference position D and the reference position R, opposing the donor substrate and the receptor substrate, measuring the substrate interval therebetween, and adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the lower surface of the micro-elements to the receptor substrate becomes a predetermined value; aligning the relative positions of the donor substrate and the receptor substrate in the horizontal plane, and reducing and projecting a laser beam from the back side of the donor substrate onto the interface between the donor substrate and the micro-elements. The reduced-projected laser beam is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 , the density of the atmosphere satisfying the substrate interval is 1 to 2 kg / m 3 , the adhesive layer has a hardness of 20 to 50 (JIS type A) and a thickness of 5 μm or more, and the predetermined value is in the range of 10 to 200 μm.

Effect of the Invention

[0015] This has the effect that high-speed mounting using the stamp method can be performed even when the pixel pitch of the display does not satisfy an integer multiple of the pitch of the optical device.

Brief Description of the Drawings

[0016] [Figure 1] It is a diagram of the arrangement of micro-LEDs on a sapphire substrate which is a donor substrate. [Figure 2] It is an example of a photomask pattern. [Figure 3] It is an example of laser irradiation on a 4-inch Φ sapphire substrate. [Figure 4] It is a diagram of the arrangement of micro-LEDs after lifting in the Y direction. [Figure 5] It is a diagram of the arrangement of micro-LEDs before and after lifting in the X direction. [Figure 6] It is a diagram of a second carrier substrate on which RGB is implemented.

Embodiments for Carrying out the Invention

[0017] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to the following embodiments. In all the drawings below, for the sake of easy recognition of each component on the drawing, the dimensions and ratios of each component are appropriately different from the actual ones.

[0018] In this embodiment, the optical device will be described as an LED (light emitting diode) of a GaN (gallium nitride) - based semiconductor. LED manufacturing companies form a large number of LEDs on a sapphire substrate. In the case of micro - LEDs with a size of 100 μm or less, they supply the sapphire substrate as it is, or a carrier substrate transferred by laser lift - off, to a company (hereinafter referred to as an LED display maker) that manufactures a display using the LEDs.

[0019] Here, the processing from the sapphire substrate will be described. In the case of a 4 - inch sapphire substrate, millions of micro - LEDs are formed on the substrate. FIG. 1 is a diagram of the arrangement of micro - LEDs (2) formed on the sapphire substrate (1). The LED size is 20×40 μm (X×Y), the arrangement pitch (3) in the X - direction is 30 μm, and the arrangement pitch (4) in the Y - direction is 60 μm.

[0020] This sapphire substrate is an example of a substrate on which an optical device targeted by the lift - off method according to this embodiment is formed. The back surface of the sapphire substrate is polished so that a laser can penetrate through it, and the surface on which the LEDs are formed is subjected to uneven processing for high - brightness.

[0021] Table 1 below shows the relationship between the display type and the pixel pitch. In the case of a 21-inch display, the pixel pitch is a positive integer multiple of the array pitch of the sapphire substrate, so a carrier substrate suitable for stamping can be fabricated simply by performing a normal laser lift-off, enabling high-speed mounting using stamping.

[0022] [Table 1]

[0023] This section explains how to manufacture a carrier board for a 100-inch display (4K, 8K).

[0024] As shown in Table 1, the pixel pitch of a 100-inch display is 0.577 mm for 4K (3840 x 2160 pixels) and 0.288 mm for 8K (7680 x 4320 pixels), which are not integer multiples of the aforementioned array pitches of 30 μm and 60 μm. Therefore, 72.1 μm is selected as the target array pitch to obtain an integer. This pixel pitch becomes 8 times the target array pitch for 4K and 4 times the target array pitch for 8K.

[0025] Next, we will describe the fabrication of carrier substrates with a target array pitch using a lift device. The lift device used is the one described in Patent Document 4. The sapphire substrate is adsorbed onto the donor stage of the lift device with the side on which the microLEDs are formed facing downwards, and the carrier substrate having an adhesive layer is adsorbed onto the receptor stage of the lift device with the side facing the sapphire substrate facing downwards, as the receptor substrate of the lift device.

[0026] If the positioning accuracy of the robot that transports each circuit board to the stage is sufficient, the coordinates of two or more pre-programmed alignment marks are moved to the position of the high-magnification camera, the alignment marks are recognized using image processing, the amount of deviation from the camera center is calculated, and this is fed back to the stage to perform high-precision alignment. If the accuracy of the transport system is insufficient, it is necessary to perform alignment using a low-magnification camera or to perform rough adjustment with a positioning sensor.

[0027] After alignment, the gap between substrates is adjusted using the Z-axis of the receptor stage. The predetermined value of the gap from the micro-LED to the adhesive layer is set based on the position of each substrate measured by the height sensor, and the thickness of the sapphire substrate, the thickness of the micro-LED, the thickness of the carrier substrate, the thickness of the adhesive layer, etc. The predetermined value is preferably 10 to 200 μm, and more preferably 50 to 150 μm. If the gap is narrower than 10 μm, there is a risk of contact due to substrate deflection, and if it is wider than 200 μm, the accuracy of the micro-LED's seating position when transferred will decrease.

[0028] Regarding element damage and seating position accuracy, the density of the gas between the donor substrate and the receptor substrate is also important, related to air resistance during micro-LED flight. Table 2 below shows a list of typical gas densities.

[0029] [Table 2]

[0030] With low-density gases like helium, the appropriate reduction in flight velocity cannot be achieved, leading to component damage such as chipping or cracking. If the gas density is too high, the resistance due to the gas is large, and even slight asymmetry will result in poor seating position accuracy. For the predetermined flight distance of 10 to 200 μm, the gas density is 1 to 2 kg / m³. 3 This is preferable.

[0031] The stage scan speed ratio of the sapphire substrate and the carrier substrate is the ratio of the array pitch of the sapphire substrate to the target array pitch of the carrier substrate for the 100-inch display. If the stage speed of the sapphire substrate is set to 200 mm / s as the reference, the stage speed of the carrier substrate will be 480.666667 mm / s in the X direction (2.403333333 times) and 240.333333 mm / s in the Y direction (1.201666667 times).

[0032] The photomasks used were chromium masks with 100-200 nm of chromium deposited on a 5-inch square quartz glass substrate. Patterns were fabricated with apertures corresponding to the arrangement and size of 500 micro-LEDs in the X direction (Figure 1) and with apertures corresponding to the arrangement and size of 200 micro-LEDs in the Y direction (Figure 4).

[0033] The mask pattern is explained in Figure 2. In Figure 2, the black areas are chrome surfaces that block light, and the white areas are apertures through which the laser passes. Due to the 1 / 5 projection optical system, the mask surface is 5 times the projection surface field size. Therefore, the aperture per LED is 100 μm × 200 μm, the pitch is 150 μm, and the length of the 500 aperture groups is 74.95 mm. If the adhesive layer of the carrier substrate is not damaged by laser irradiation, a rectangular aperture such as 75000 μm × 250 μm is also acceptable.

[0034] Alignment, which matches the photomask coordinate system with the stage coordinate system, is performed when changing masks. If high-precision machining is required, mask alignment is also performed when switching patterns within the same mask. The method of mask alignment varies depending on the equipment configuration. One method involves observing alignment marks formed on the mask with a high-magnification camera, while another method involves observing the mask projection image with a profiler installed on the stage.

[0035] If there is a Θ misalignment of the mask with respect to the optical axis, that is, a Θ misalignment of the mask with respect to the scan axis of the substrate stage, the mask stage needs to be adjusted. However, for misalignments in the XY direction perpendicular to the optical axis within the plane, the mask stage can be used for alignment, or the substrate stage can be used to perform mask alignment by having a correction value.

[0036] The actual lift operation will now be described. The donor substrate is the aforementioned 4-inch Φ sapphire substrate. The receptor substrate is a 6-inch Φ quartz substrate, and an adhesive layer with a hardness of 30 and a thickness of 20 μm is provided on its surface. If the adhesive layer is too hard, the micro-LED may break or be damaged, and if it is too soft, it may bounce and not sit properly, or become embedded in the adhesive layer. Therefore, a hardness of 20 to 50 (JIS Type A) and a thickness of 5 μm or more is desirable, as it is less affected by the type of receptor substrate and the properties of the adhesive layer material are the main factors. A hardness of 25 to 40 is more preferable. Furthermore, the thickness of the adhesive layer is preferably 100 μm or less, and more preferably 10 to 50 μm.

[0037] First, a lift is performed in the Y direction in Figure 1. The photomask is set to have a pattern with apertures corresponding to the arrangement and size of 500 micro-LEDs in the X direction of Figure 1. The velocity in the isokinetic region of the donor stage and receptor stage is set to 200 mm / s and 240.333333 mm / s.

[0038] The irradiation method on a 4-inch diameter substrate is explained using Figure 3. The entire surface is irradiated by projecting a mask pattern of approximately 15 mm and performing scanning irradiation seven times. The hatched areas are the irradiation areas, and irradiation is performed only on the mounting positions of the micro-LEDs.

[0039] If the irradiation start position (X,Y) of the donor substrate, a 4-inch diameter substrate, is (0,-10.0), then the irradiation start position of the receptor substrate, a 6-inch diameter substrate, will be (0,-12.0166667). An acceleration distance is provided so that the aforementioned constant velocity is maintained at this starting position, and the entire irradiation area is at a constant velocity. The pulse laser is triggered based on the stage coordinates and irradiation is performed only on the coordinates where the micro-LEDs are mounted.

[0040] The lift of GaN-based microLEDs from a sapphire substrate requires a high energy density due to the epitaxial substrate, ranging from 0.5 to 2 J / cm². 2 That is the case.

[0041] Figure 4 shows a portion of the resulting lift array. The microLEDs are arranged in a vertically elongated ellipse shape on a 6-inch diameter substrate, with the array pitch (5) widening in the Y direction.

[0042] Next, a lift in the X direction as shown in Figure 4 is performed. The 6-inch diameter quartz substrate (first carrier substrate (6)) removed from the receptor stage is rotated 90 degrees in the XY plane of Figure 4 and adsorbed as a donor substrate. A blank 6-inch diameter quartz substrate is adsorbed onto the receptor substrate as the second carrier substrate (8).

[0043] The photomask is switched to a pattern having apertures corresponding to the arrangement and size of 200 micro-LEDs in the Y direction as shown in Figure 4. The alignment of the donor substrate, receptor substrate and photomask is the same as described above.

[0044] The velocity in the isokinetic region of the donor stage and receptor stage is set to 200 mm / s and 480.666667 mm / s, respectively. The irradiation method is the same as described above. Scan irradiation is performed nine times to irradiate the entire surface. If the irradiation start position (X,Y) of the donor substrate is (0,-10.0), then the irradiation start position of the receptor substrate will be (0,-24.0333333). Based on the coordinates of the lift result in the Y direction from the first time, the same scan irradiation as described above can be performed to obtain a lift result with the array pitch adjusted in the XY direction, as shown in Figure 5.

[0045] Up to this point, we have explained the process of adjusting the array pitch in the Y direction in Figure 1, followed by the array in the X direction. However, it is also acceptable to adjust the X direction first, followed by the Y direction.

[0046] Although a method for fabricating carrier substrates for single-color microLEDs has been described, a second carrier substrate with RGB LEDs arranged in a row can also be fabricated by successively lifting each of the RGB microLEDs. If all three RGB colors are GaN-based, a first carrier substrate can be fabricated for each of RGB in the above process, and then the second carrier substrate can be fabricated by lifting the RGB LEDs in a shifted manner. Figure 6 shows an example of a second carrier substrate with RGB LEDs mounted. If R (red) is GaAs-based, it is necessary to transfer it to a sapphire substrate or quartz glass substrate beforehand with the electrodes facing the surface, but a second carrier substrate with RGB LEDs arranged in a row can be fabricated using a similar procedure. In this case, since the sapphire substrate or quartz glass substrate is not an epitaxial substrate of a compound semiconductor, the energy density during lifting does not need to be high, and can be as low as 0.2 to 1.5 J / cm². 2 That is the case.

[0047] While embodiments of the present invention have been described in detail above, the present invention can also be expressed from a different perspective as follows (1) to (25). (1) A method for lifting an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, A step of obtaining the reference position D and the array pitch D of the array of optical devices formed on a sapphire substrate, A step of obtaining the reference position R and array pitch R of the array of the optical device to be transferred onto the carrier substrate by lift, A step of adjusting the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value, based on reference position D and reference position R, A process for calculating the scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and array pitch R, The process involves irradiating the interface between the sapphire substrate and the optical device with laser light from the back side of the sapphire substrate towards multiple optical devices arranged in a single line, and The process involves aligning the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on reference position D and reference position R, and scanning the sapphire substrate and the carrier substrate at the speed ratio VR, A process of irradiating with laser light and lifting in conjunction with the scanning operation, A lifting method including [details omitted]. (2) The array pitch D is composed of an array pitch DX in the X direction and an array pitch DY in the Y direction. The array pitch R is composed of an array pitch RX in the X direction and an array pitch RY in the Y direction. The speed ratio VR is composed of the speed ratio VRX in the X direction calculated from the array pitches DX and RX, and the speed ratio VRY in the Y direction calculated from the array pitches DY and RY. The process involves lifting at a speed ratio of VRY, then mounting the carrier substrate as a donor substrate in place of the sapphire substrate, rotated 90 degrees horizontally with respect to the scanning direction, and then lifting it onto the second carrier substrate at a speed ratio of VRX. The lifting method described in (1), further including the following: (3) The irradiation of the laser light is a reduction projection using a photomask, the photomask having a first aperture which corresponds to approximately one optical device in the Y direction and two or more optical devices with an array pitch DX in the X direction, and a second aperture which corresponds to approximately one optical device in the X direction and two or more optical devices with an array pitch RY in the Y direction, It has, A process of switching the mask so that the first opening is used when lifting at a speed ratio of VRY, and the second opening is used when lifting at a speed ratio of VRX, The lifting method described in (2) further includes the following: (4) The lift method according to (3), wherein the apertures of the photomask are a group of apertures that irradiate individual optical devices in a shape substantially that of the optical devices. (5) A lifting device for lifting an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate, A first processing unit that acquires the reference position D and the array pitch D of an array of optical devices formed on a sapphire substrate, A second processing unit that acquires the reference position R and array pitch R of the array of the optical device to be transferred onto the carrier substrate by lift, A stage and stage controller that, based on reference position D and reference position R, align the sapphire substrate and carrier substrate and adjust the position of either or both of the sapphire substrate and carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value. A third processing unit calculates the scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and array pitch R, A reduction projection optical system that irradiates laser light from the back side of the sapphire substrate towards multiple optical devices arranged in a single line at the interface between the sapphire substrate and the optical devices, A stage and stage controller that align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on reference position D and reference position R, and scan the sapphire substrate and the carrier substrate at the speed ratio VR, A laser device that emits laser light in conjunction with the scanning operation, A lifting device having (6) A method for lifting a micro-element on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer, A step to obtain the three-dimensional size of the micro-elements arranged on a donor substrate, the reference position D of the arrangement, and the arrangement pitch D; and a step to obtain the reference position R and arrangement pitch R of the arrangement of the micro-elements to be mounted on a receptor substrate by lift. A step of adjusting the position of either or both of the donor and receptor substrates so that the distance from the bottom surface of the micro-element to the receptor substrate is a predetermined value, based on reference position D and reference position R, by facing the donor substrate and the receptor substrate, measuring the distance between the substrates, and adjusting the position of either the donor substrate or the receptor substrate. The process involves aligning the relative positions of the donor substrate and the receptor substrate in the horizontal plane, and projecting a reduced laser beam onto the interface between the donor substrate and the micro-element from the back side of the donor substrate. Includes, The reduced-projection laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm². 2 , The density of the atmosphere filling the aforementioned substrate gap is 1-2 kg / m³ 3 , The aforementioned adhesive layer has a hardness of 20-50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm. A lifting method. (7) A lifting method for lifting an optical device on a donor substrate to a receptor substrate, The donor substrate and the receptor substrate are placed facing each other, and a gap is created between the surface of the optical device and the receptor substrate. A lifting method for lifting adjacent optical devices on a donor substrate, which are arranged at predetermined intervals, onto a carrier substrate while converting the intervals to a different interval from the predetermined one. (8) The lift method according to (7), wherein the conversion interval is in the X direction (short axis direction of the optical device). (9) The lift method according to (7), wherein the conversion interval is in the Y direction (long axis direction of the optical device). (10) The lift method according to any one of (7) to (9), wherein the gap is 10 to 200 μm. (11) The lifting method according to any one of (7) to (10), wherein the donor substrate or the receptor substrate is lifted while being scanned. (12) The lift method according to any one of (7) to (11), wherein the optical device is a laser diode or a photodiode. (13) The lift method according to any one of (7) to (11), wherein the optical device is an LED or a microLED. (14) A method for manufacturing a receptor substrate on which an optical device is transferred, which lifts an optical device from a donor substrate to a receptor substrate, The donor substrate and the receptor substrate are placed facing each other, and a gap is created between the surface of the optical device and the receptor substrate. A method for manufacturing a receptor substrate on which optical devices are transferred, such that adjacent optical devices on a donor substrate arranged at predetermined intervals are lifted onto a carrier substrate while converting the intervals to a different interval from the predetermined one. (15) The method for manufacturing a receptor substrate on which the optical device described in (14) is moved, wherein the conversion interval is in the X direction (short axis direction of the optical device). (16) The method for manufacturing a receptor substrate on which the optical device described in (14) is moved, wherein the conversion interval is in the Y direction (long axis direction of the optical device). (17) The gap is 10 to 200 μm. A method for manufacturing a receptor substrate on which an optical device described in any one of (14) to (16) has been moved. (18) A method for manufacturing a receptor substrate on which an optical device described in any one of (14) to (17) has been moved, comprising lifting the donor substrate or the receptor substrate while performing a scanning operation. (19) The optical device is a laser diode or a photodiode. A method for manufacturing a receptor substrate on which an optical device described in any one of (14) to (18) is transferred. (20) The optical device is an LED or a microLED. A method for manufacturing a receptor substrate on which an optical device described in any one of (14) to (18) is transferred. (21) A method for manufacturing a display, comprising mounting an optical device on a receptor substrate obtained by a method for manufacturing a receptor substrate on which an optical device described in any one of (14) to (19) has been transferred onto another substrate. (22) The method for manufacturing a display according to (21), wherein the implementation is by stamping. (23) A method for lifting an optical device on a donor substrate to a receptor substrate, A step to obtain the array pitch D of the array of optical devices formed on a donor substrate, A step of arranging the donor substrate and the receptor substrate opposite each other and adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, A step of calculating the scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device to be transferred onto the receptor substrate by lift, The process involves irradiating the interface between the donor substrate and the optical device with laser light from the back side of the donor substrate towards multiple optical devices arranged in a single line, and The process involves scanning the donor substrate and the receptor substrate at the aforementioned speed ratio VR, A process of irradiating with laser light and lifting in conjunction with the scanning operation, A lifting method including [details omitted]. (24) A lifting device for lifting an optical device on a donor substrate to a receptor substrate, A mechanism for obtaining the array pitch D of an array of optical devices formed on a donor substrate, A mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, with the donor substrate and the receptor substrate facing each other. A mechanism for calculating the scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device array to be transferred onto the receptor substrate by lift, A reduction projection optical system that irradiates a laser beam from the back side of the donor substrate towards multiple optical devices arranged in a single line at the interface between the donor substrate and the optical devices, A mechanism that scans the donor substrate and the receptor substrate using the aforementioned speed ratio VR, A laser device that emits laser light in conjunction with the scanning operation, A lifting device having (25) A method for lifting a micro-element on a donor substrate to a receptor substrate having an adhesive layer, A step of arranging the donor substrate and the receptor substrate opposite each other, and adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the bottom surface of the micro-element to the receptor substrate is a predetermined value, A process of projecting a reduced laser beam onto the interface between the donor substrate and the micro-element from the back side of the donor substrate, Includes, The reduced-projection laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm². 2 , The density of the atmosphere satisfying the substrate interval is 1 to 2 kg / m 3 , The adhesive layer has a hardness of 20 to 50 and a thickness of 5 μm or more, The predetermined value is 10 to 200 μm, and a lifting method that is

[0048] Also, when the present invention is expressed from another perspective, it becomes as follows (U1) to (U15). (U1) A system for lifting an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate, a mechanism for obtaining a reference position D and an array pitch D of an array of optical devices formed on the sapphire substrate, a mechanism for obtaining a reference position R and an array pitch R of an array of the optical devices to be transferred by lifting onto the carrier substrate, Based on the reference position D and the reference position R, the sapphire substrate and the carrier substrate are opposed to each other, and a mechanism for adjusting the position of either or both of the sapphire substrate and the carrier substrate so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value, a mechanism for calculating a scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R, a mechanism for irradiating a plurality of optical devices arranged in a row with laser light from the back side of the sapphire substrate toward the interface between the sapphire substrate and the optical device, Based on the reference position D and the reference position R, the relative position in the horizontal plane of the sapphire substrate and the carrier substrate is aligned, and a mechanism for scanning the sapphire substrate and the carrier substrate at the speed ratio VR, a mechanism for irradiating laser light in conjunction with the scan operation to perform lifting, and a lifting system including (U2) The array pitch D is composed of an array pitch DX in the X direction and an array pitch DY in the Y direction The array pitch R is composed of an array pitch RX in the X direction and an array pitch RY in the Y direction, The speed ratio VR is composed of the speed ratio VRX in the X direction calculated from the array pitches DX and RX, and the speed ratio VRY in the Y direction calculated from the array pitches DY and RY. The mechanism involves lifting the carrier substrate at a speed ratio of VRY, then rotating it 90 degrees horizontally relative to the scanning direction to use it as a donor substrate instead of the sapphire substrate, and then lifting it to the second carrier substrate at a speed ratio of VRX. The lift system described in (U1) further includes the following. (U3) The irradiation of the laser light is a reduction projection using a photomask, the photomask having a first aperture which corresponds to approximately one optical device in the Y direction and two or more optical devices with an array pitch DX in the X direction, and a second aperture which corresponds to approximately one optical device in the X direction and two or more optical devices with an array pitch RY in the Y direction, It has, A mechanism to switch the mask so that the first opening is used when lifting at a speed ratio of VRY, and the second opening is used when lifting at a speed ratio of VRX, The lift system described in (U2) further includes the following: (U4) The lift system according to (U3), wherein the apertures of the photomask are a group of apertures that irradiate individual optical devices in a shape substantially that of the optical device. (U5) A lift device in which a donor substrate is installed, which lifts an optical device on a sapphire substrate, which is a donor substrate, onto a carrier substrate, which is a receptor substrate, A first processing unit that acquires the reference position D and the array pitch D of an array of optical devices formed on a sapphire substrate, A second processing unit that acquires the reference position R and array pitch R of the array of the optical device to be transferred onto the carrier substrate by lift, A stage and stage controller that, based on reference position D and reference position R, align the sapphire substrate and carrier substrate and adjust the position of either or both of the sapphire substrate and carrier substrate so that the distance from the surface of the optical device to the carrier substrate is a predetermined value. A third processing unit calculates the scan speed ratio VR of the sapphire substrate and the carrier substrate from the array pitch D and array pitch R, A reduction projection optical system that irradiates laser light from the back side of the sapphire substrate towards multiple optical devices arranged in a single line at the interface between the sapphire substrate and the optical devices, A stage and stage controller that align the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane based on reference position D and reference position R, and scan the sapphire substrate and the carrier substrate at the speed ratio VR, A laser device that emits laser light in conjunction with the scanning operation, A lifting device having (U6) A system for lifting a micro-element on a sapphire substrate, which is a donor substrate, onto a receptor substrate having an adhesive layer, A process for obtaining the three-dimensional size of micro-elements arranged on a donor substrate, the reference position D of the arrangement, and the arrangement pitch D; and a mechanism for obtaining the reference position R and arrangement pitch R of the arrangement of the micro-elements to be mounted on a receptor substrate by lift. A mechanism that, based on reference positions D and R, positions the donor substrate and the receptor substrate opposite each other, measures the distance between the substrates, and adjusts the position of either or both of the donor substrate and the receptor substrate so that the distance from the bottom surface of the micro-element to the receptor substrate is a predetermined value. A mechanism that aligns the relative positions of the donor substrate and the receptor substrate in the horizontal plane, and projects a reduced laser beam onto the interface between the donor substrate and the micro-element from the back side of the donor substrate, Includes, The reduced-projection laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm². 2 , The density of the atmosphere filling the aforementioned substrate gap is 1-2 kg / m³ 3 , The aforementioned adhesive layer has a hardness of 20-50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm. This is a lift system. (U7) A lift system for lifting an optical device on a donor substrate to a receptor substrate, The donor substrate and the receptor substrate are placed facing each other, and a gap is created between the surface of the optical device and the receptor substrate. A lift system having a mechanism for lifting adjacent optical devices on a donor substrate, which are arranged at predetermined intervals, onto a carrier substrate while converting the intervals to a different interval from the predetermined one. (U8) The lift system described in (U7), wherein the conversion interval is in the X direction (short axis direction of the optical device). (U9) The lift system according to (U7), wherein the conversion interval is in the Y direction (long axis direction of the optical device). (U10) The gap is 10 to 200 μm. The lift system according to any one of (U7) to (U9). (U11) A lift system according to any one of (U7) to (U10) that lifts the donor substrate or the receptor substrate while performing a scanning operation. (U12) The lift system according to any one of (U7) to (U11), wherein the optical device is a laser diode or a photodiode. (U13) The lift system according to any one of (U7) to (U11), wherein the optical device is an LED or a microLED. (U14) A manufacturing system for a receptor substrate in which an optical device is transferred to lift an optical device from a donor substrate to a receptor substrate, The donor substrate and the receptor substrate are placed facing each other, and a gap is created between the surface of the optical device and the receptor substrate. A manufacturing system for a receptor substrate on which optical devices are transferred, the system having a mechanism for lifting adjacent optical devices on a donor substrate, which are arranged at predetermined intervals, onto a carrier substrate while converting the intervals to different from the predetermined intervals. (U15) The conversion interval is in the X direction (short axis direction of the optical device) Manufacturing system for a receptor substrate on which the optical device described in (U14) has been moved. (U16) The conversion interval is in the Y direction (long axis direction of the optical device) Manufacturing system for a receptor substrate on which the optical device described in (U14) has been moved. (U17) The gap is 10 to 200 μm. A manufacturing system for a receptor substrate on which an optical device described in any one of (U14) to (U16) has been transferred. (U18) A manufacturing system for a receptor substrate on which an optical device described in any one of (U14) to (U17) is moved, which lifts the donor substrate or the receptor substrate while performing a scanning operation. (U19) The optical device is a laser diode or a photodiode. A manufacturing system for a receptor substrate on which any one of the optical devices described in (U14) to (U18) is transferred. (U20) The optical device is an LED or a microLED. A manufacturing system for a receptor substrate on which any one of the optical devices described in (U14) to (U18) is transferred. A display manufacturing system having a mechanism for mounting an optical device on a receptor substrate obtained by a manufacturing system for a receptor substrate on which any one of the optical devices described in (U21) (U14) to (U19) has been transferred, onto another substrate. (U22) The aforementioned implementation is a stamping method implementation, a display manufacturing system as described in (U21). (U23) A system for lifting an optical device on a donor substrate to a receptor substrate, A mechanism for obtaining the array pitch D of an array of optical devices formed on a donor substrate, A mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, with the donor substrate and the receptor substrate facing each other. A mechanism for calculating the scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device to be transferred onto the receptor substrate by lift, A mechanism that irradiates the interface between the donor substrate and the optical device with laser light from the back side of the donor substrate towards multiple optical devices arranged in a single line, A mechanism that scans the donor substrate and the receptor substrate using the aforementioned speed ratio VR, A mechanism that irradiates and lifts with laser light in conjunction with the scanning operation, A lift system including a lift system. (U24) A lift device in which a donor substrate is installed on a lift device that lifts an optical device on a donor substrate to a receptor substrate, A mechanism for obtaining the array pitch D of an array of optical devices formed on a donor substrate, A mechanism for adjusting the position of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate is a predetermined value, with the donor substrate and the receptor substrate facing each other. A mechanism for calculating the scan speed ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device array to be transferred onto the receptor substrate by lift, A reduction projection optical system that irradiates a laser beam from the back side of the donor substrate towards multiple optical devices arranged in a single line at the interface between the donor substrate and the optical devices, A mechanism that scans the donor substrate and the receptor substrate using the aforementioned speed ratio VR, A laser device that emits laser light in conjunction with the scanning operation, A lifting device having (U25) A system for lifting a micro-element on a donor substrate to a receptor substrate having an adhesive layer, A mechanism for adjusting the position of either or both of the donor and receptor substrates so that the distance from the bottom surface of the micro-element to the receptor substrate is a predetermined value, with the donor substrate and receptor substrate facing each other. A mechanism that projects a reduced laser beam onto the interface between the donor substrate and the micro-element from the back side of the donor substrate, Includes, The reduced-projection laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm². 2 , The density of the atmosphere filling the aforementioned substrate gap is 1-2 kg / m³ 3 , The aforementioned adhesive layer has a hardness of 20-50 and a thickness of 5 μm or more. The predetermined value is 10 to 200 μm. This is a lift system.

[0049] Furthermore, the various mechanisms may each have a different function, or a single mechanism may have multiple functions. [Industrial applicability]

[0050] It can be used in part of the manufacturing process for micro-LED displays. It can also be used to increase the flexibility of GaN-based laser diode placement in the manufacturing processes of VCSELs (Vertical Cavity Surface Emitting Lasers), display projectors, and laser projectors. Furthermore, it can be used to increase the flexibility of GaN-based photodiode placement in the manufacturing process of flat panel sensors. [Explanation of symbols]

[0051] 1 Sapphire substrate 2 Micro LEDs 3 X-axis alignment pitch 4. Array pitch in the Y-axis direction 5. Array pitch adjusted in the Y-axis direction 6. First carrier substrate 7. Array pitch adjusted in the X-axis direction 8. Second carrier substrate

Claims

1. A damage suppression method for suppressing damage to the adhesive layer when laser lift-off is performed on a sapphire substrate, where gallium nitride semiconductor light-emitting diodes formed at predetermined intervals on the substrate are converted to intervals different from the predetermined intervals, and the adhesive layer is subjected to irradiation with laser light used for the laser lift-off, wherein the damage to the adhesive layer is suppressed when laser lift-off is performed. The light-emitting diode is formed in a matrix on the sapphire substrate, The irradiation of the laser light is a reduced projection using a photomask, The photomask has a light-shielding portion and an aperture group, and the aperture group has an aperture group in which apertures corresponding to individual light-emitting diodes are arranged in a single row. The light-shielding portion is a damage suppression method that shields the laser light from irradiating the adhesive layer.

2. The damage suppression method according to claim 1, wherein the conversion interval is in the X direction (the short axis direction of the light-emitting diode).

3. The damage suppression method according to claim 1, wherein the conversion interval is in the Y direction (the long axis direction of the light-emitting diode).

4. The damage suppression method according to any one of claims 1 to 3, wherein the light-emitting diode and the adhesive layer are laser-lifted while a gap is provided between them.

5. The damage suppression method according to claim 4, wherein the gap is 10 to 200 μm.

6. The damage suppression method according to any one of claims 1 to 5, wherein the sapphire substrate or the receptor substrate is subjected to a scanning operation while the laser is lifted off.

7. The damage suppression method according to any one of claims 1 to 6, wherein the light-emitting diode is a microLED.

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