electronic machines

Abstract

To provide an electronic device that can accurately recognize the facial features of the user. [Solution] A first optical element, a second optical element, a frame, an imaging device, and feature extraction. Glasses-type electronic device having a part and an emotion estimation part. The frame has the side of the first optical member and It is provided so as to be in contact with the side surface of the second optical element. The imaging device is provided so as to be in contact with the frame. It is provided and has the function of detecting a part of the face of the user of the glasses-type electronic device. The feature extraction unit is It has the function of extracting facial features from a portion of the detected user's face. (Emotion estimation) The unit has the function of estimating information about the user from the extracted features.

Description

[Technical Field]

[0001] One aspect of the present invention relates to eyeglasses-type electronic devices.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field is semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, Electronic equipment, lighting equipment, input devices, input / output devices, methods for driving them, or methods for manufacturing them. One example is semiconductor devices that function by utilizing semiconductor properties. This refers to all types of devices. [Background technology]

[0003] A technology for recognizing facial expressions from captured images of faces is known. For example, digital cameras, etc. This technology automatically captures images the moment the subject smiles or looks at the camera. Facial recognition is being applied to this.

[0004] As for facial recognition technology, for example, Patent Document 1 describes detecting feature points of a face and using those feature points to... A technology that recognizes facial expressions with high accuracy has been disclosed. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2007-087346 [Overview of the project] [Problems that the invention aims to solve]

[0006] Facial recognition can be performed, for example, by shining infrared light onto the face and detecting the reflected infrared light. Here, a light source that emits infrared light, etc., and a sensor that detects reflected infrared light, etc., are used to detect the face, If the object is far from the eyes, it may be difficult to accurately recognize facial expressions.

[0007] One aspect of the present invention provides an electronic device that can accurately recognize the facial features of a user. One of the challenges is to accurately estimate the user's emotions. Alternatively, one aspect of the present invention is to accurately estimate the user's emotions. One objective of this invention is to provide an electronic device that can reduce user fatigue. Alternatively, one aspect of this invention is to provide an electronic device that can reduce user fatigue. One of the objectives is to provide an electronic device that can accurately estimate the level of labor. One aspect of the invention aims to provide a novel electronic device.

[0008] Alternatively, one aspect of the present invention aims to provide an electronic device having a display device with a large number of pixels. This is one aspect of the present invention. Alternatively, one aspect of the present invention provides an electronic device having a high-resolution display device. One of the challenges is to enable the display of high-resolution images. Alternatively, one aspect of the present invention enables the display of high-resolution images. One objective is to provide an electronic device having a display device. Or, one embodiment of the present invention The objective is to provide electronic equipment having a display device capable of displaying high-resolution images. This is one aspect of the present invention. Alternatively, one aspect of the present invention is a display capable of displaying images with a high sense of realism. One objective is to provide an electronic device having a device. Alternatively, one aspect of the present invention is to provide a high-brightness electronic device. One of the objectives is to provide an electronic device having a display device capable of displaying images of a certain degree. Alternatively, one aspect of the present invention provides an electronic device having a narrow-bezel display device. One of the challenges is to provide an electronic device having a small display device. One of the challenges is to achieve this. Alternatively, one aspect of the present invention relates to an electric device having a high-speed operating display device. One objective is to provide a sub-device. Alternatively, one aspect of the present invention is to provide a display with low power consumption. One objective is to provide an electronic device having a device. Alternatively, one aspect of the present invention is to provide a low-cost electronic device. One objective is to provide an electronic device having a suitable display device. Or, one aspect of the present invention One of the objectives is to provide electronic devices with highly reliable display devices. One aspect of the invention aims to provide an electronic device having a novel display device.

[0009] Alternatively, one aspect of the present invention aims to provide a novel display device. One aspect of the invention aims to provide a novel imaging device.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. The approach does not need to solve all of these problems. This information can be extracted from descriptions in the specification, drawings, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention comprises a first optical member, a second optical member, a frame, an imaging device, and It has a feature extraction unit and an emotion estimation unit, and the frame has the side surface of the first optical member and the second light The imaging device is provided so as to be in contact with the side surface of the structural member, and is provided so as to be in contact with the frame. The imaging device has a function to detect a part of the user's face, and the feature extraction unit extracts the detected part of the user's face. It has a function to extract the user's facial features from a part of their face, and the emotion estimation unit uses the extracted features Therefore, it is a pair of glasses-type electronic devices that have the function of estimating information about the user.

[0012] Alternatively, in the above embodiment, the information may be the user's level of fatigue or emotions.

[0013] Alternatively, in the above embodiment, the device has a display device, and the display device displays an image corresponding to the information. That's good too.

[0014] Alternatively, in the above embodiment, the display device has a light-emitting element, and the light-emitting element is an organic EL element. That's fine.

[0015] Alternatively, in the above embodiment, the display device has a transistor, and the transistor is a channel The formation region may contain a metal oxide.

[0016] Alternatively, one aspect of the present invention comprises a first optical member, a second optical member, a frame, and an imaging device. The imaging device has a display device and a photoelectric converter that has the function of detecting the amount of light received. It has a replacement element, and the frame is in contact with the side surface of the first optical member and the side surface of the second optical member. The imaging device is provided so as to be in contact with the frame, and the display device is the first layer The first layer is constructed by stacking the first and second layers, and the first layer consists of a gate driver circuit and a source driver. The second layer has a pixel array in which pixels are arranged in a matrix, The gate driver circuit and source driver circuit have regions that overlap with the pixels, and the gate driver The IBA circuit is a spectacle-type electronic device that has an overlapping region with the source driver circuit.

[0017] Alternatively, in the above embodiment, the display device has a DA conversion circuit, and the DA conversion circuit generates potential The circuit has a pass transistor logic circuit, and the potential generation circuit has a source driver circuit. Located outside the path, the pass transistor logic circuit is located in the source driver circuit. The potential generation circuit has the function of generating multiple potentials of different magnitudes, and the path transforms The Zista Logic circuit receives image data and, based on the digital values ​​of the image data, The potential generation circuit may have a function to output one of the potentials it generates.

[0018] Alternatively, in the above embodiment, the pixel has a light-emitting element, and the light-emitting element is an organic EL element. That's good too.

[0019] Alternatively, in the above embodiment, the pixel has a transistor, and the transistor forms a channel The region may contain a metal oxide. [Effects of the Invention]

[0020] According to one aspect of the present invention, an electronic device capable of accurately recognizing the facial features of a user is provided. It is possible to do so. Alternatively, according to one aspect of the present invention, it is possible to accurately estimate the user's emotions. An electronic device can be provided that can reduce user fatigue. Alternatively, according to one aspect of the present invention, the fatigue level of the user can be reduced. An electronic device capable of accurately estimating this can be provided. Or, one aspect of the present invention This makes it possible to provide novel electronic devices.

[0021] Alternatively, according to one aspect of the present invention, an electronic device having a display device with a large number of pixels is provided. It is possible. Or, according to one aspect of the present invention, an electronic device having a display device with high resolution is provided. It is possible to display high-resolution images according to one aspect of the present invention. An electronic device having a display device can be provided. Or, according to one aspect of the present invention, a high quality We can provide an electronic device having a display device that can display images of a certain position. According to one aspect of the present invention, a display device capable of displaying highly realistic images is provided. An electronic device can be provided. Or, according to one aspect of the present invention, a high-brightness image can be displayed. An electronic device having a display device capable of doing so can be provided. Or, an embodiment of the present invention Depending on the method, it is possible to provide electronic devices having a display device with a narrow bezel. Alternatively, this invention In one embodiment of the present invention, an electronic device having a small display device can be provided. Alternatively, According to one aspect of the invention, an electronic device having a high-speed operating display device can be provided. Alternatively, according to one aspect of the present invention, to provide an electronic device having a display device with low power consumption. This can be done. Alternatively, according to one aspect of the present invention, an electronic device having a low-cost display device can be provided. This is possible. Alternatively, according to one aspect of the present invention, an electronic device having a highly reliable display device. This can provide an electronic device having a novel display device according to one aspect of the present invention. We can provide the vessel.

[0022] Alternatively, according to one aspect of the present invention, a novel display device can be provided. In one embodiment, a novel imaging device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... It is possible to extract this information from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0024] [Figure 1] Figures 1(A) and 1(B) show examples of the configuration of electronic equipment. [Figure 2] Figures 2(A) and 2(B) show examples of the configuration of electronic equipment. [Figure 3]Figures 3(A) to 3(C) show examples of the configuration of electronic equipment. [Figure 4] Figure 4 is a block diagram showing an example of the configuration of an electronic device. [Figure 5] Figures 5(A) and 5(B) show examples of neural network configurations. Figure 5(C) is a graph illustrating emotion estimation. [Figure 6] Figure 6(A) shows an example of how electronic devices are used. Figure 6(B) shows an example of the field of view of an electronic device user. [Figure 7] Figure 7 is a block diagram showing an example configuration of an electronic device. [Figure 8] Figure 8 is a block diagram showing an example of a display device configuration. [Figure 9] Figure 9 is a block diagram showing an example of a display device configuration. [Figure 10] Figure 10 is a block diagram showing an example of a display device configuration. [Figure 11] Figure 11 is a block diagram showing an example of a display device configuration. [Figure 12] Figure 12 is a block diagram showing an example of a display device configuration. [Figure 13] Figure 13 is a block diagram showing an example of a display device configuration. [Figure 14] Figure 14 is a block diagram showing an example of a display device configuration. [Figure 15] Figure 15 is a block diagram showing an example of a display device configuration. [Figure 16] Figure 16 is a circuit diagram showing an example of a DA conversion circuit configuration. [Figure 17] Figure 17 is a block diagram showing an example of a shift register configuration. [Figure 18] Figure 18(A) is a block diagram showing an example of a shift register configuration. Figure 18(B) is a circuit diagram showing an example of a shift register configuration. [Figure 19] Figure 19 is a schematic diagram showing an example of the arrangement of gate driver and source driver circuits. [Figure 20]Figure 20 is a top view showing an example configuration of a gate driver circuit and a source driver circuit. [Figure 21] Figures 21(A) to 21(G) show examples of pixel configurations. [Figure 22] Figures 22(A) and 22(B) are circuit diagrams showing examples of pixel configurations. [Figure 23] Figure 23(A) is a circuit diagram showing an example of pixel configuration. Figure 23(B) is a timing chart showing an example of how the pixel operates. [Figure 24] Figures 24(A) to 24(E) are circuit diagrams showing examples of pixel configurations. [Figure 25] Figure 25 is a block diagram showing an example of a display device configuration. [Figure 26] Figure 26 illustrates an example of the operation of a display device. [Figure 27] Figure 27 is a cross-sectional view showing an example of the configuration of a display device. [Figure 28] Figure 28 is a cross-sectional view showing an example of the configuration of a display device. [Figure 29] Figure 29 is a cross-sectional view showing an example of the configuration of a display device. [Figure 30] Figure 30 is a cross-sectional view showing an example of the configuration of a display device. [Figure 31] Figures 31(A) and 31(B) are top views showing examples of pixel configurations. [Figure 32] Figure 32 is a top view showing an example of pixel configuration. [Figure 33] Figure 33 is a cross-sectional view showing an example of pixel configuration. [Figure 34] Figure 34(A) is a schematic diagram showing an example of pixel configuration. Figure 34(B) is a top view showing an example of pixel configuration. [Figure 35] Figures 35(A) and 35(B) are top views showing examples of pixel configurations. [Figure 36] Figure 36 is a top view showing an example of pixel configuration. [Figure 37] Figure 37 is a top view showing an example of pixel configuration. [Figure 38]Figure 38 is a cross-sectional view showing an example of pixel configuration. [Figure 39] Figures 39(A) to 39(E) show examples of the configuration of a light-emitting element. [Figure 40] Figures 40(A) and 40(B) are cross-sectional views showing examples of the configuration of an imaging device. [Figure 41] Figure 41(A) is a top view showing an example of a transistor configuration. Figures 41(B) and 41(C) are cross-sectional views showing an example of a transistor configuration. [Figure 42] Figure 42(A) is a top view showing an example of a transistor configuration. Figures 42(B) and 42(C) are cross-sectional views showing an example of a transistor configuration. [Figure 43] Figure 43(A) is a top view showing an example of a transistor configuration. Figures 43(B) and 43(C) are cross-sectional views showing an example of a transistor configuration. [Modes for carrying out the invention]

[0025] The embodiments will be described below with reference to the drawings. However, many of the embodiments differ. It is possible to implement it in any manner, without deviating from its purpose and scope. It will be readily apparent to those skilled in the art that the details can be modified in various ways. Therefore, the present invention The following embodiments are not to be interpreted as being limited to their contents.

[0026] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.

[0027] In each figure described herein, the size of each component, the thickness of the layer, or the area is clearly indicated. It may be exaggerated for illustrative purposes. Therefore, it is not necessarily limited to that scale.

[0028] Furthermore, in this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is meant to be noticed, and is not limited to a specific number.

[0029] Furthermore, in this specification, terms indicating placement such as "above," "below," "to the left," and "to the right" This is used for convenience to explain the positional relationships between components by referring to the diagram. Also, The relative positions of the elements change appropriately depending on the direction in which each element is depicted. This means that the terminology is not limited to what is explained in the specification, but can be appropriately rephrased depending on the situation. .

[0030] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conduction or non-conductivity. Switching operations and the like can be realized. Transistors in this specification are IG FET(Insulated Gate Field Effect Transist) This includes (or) and thin-film transistors (TFTs). nothing.

[0031] Furthermore, in this specification, the source and drain functions of a transistor are defined as the transistor The polarity of the terminals, or the direction of the current during circuit operation, can be reversed. Therefore, the terms source and drain may be used interchangeably.

[0032] Furthermore, in this specification, "electrically connected" refers to both a direct connection and a "some kind of connection". This includes cases where it is connected via "something that has an electrical effect". Here, "something "A device having an electrical function" is one that enables the exchange of electrical signals between connected objects. If so, there are no particular restrictions. Therefore, even when it is expressed as "electrically connected", In real-world circuits, there may be no physical connections, only prolonged wiring. Furthermore, even when described as "direct connection," different conductors are connected via contact. This includes cases where connections are made. Note that the wiring contains one or more different conductors of the same element. There are cases where it contains different elements, and cases where it contains different elements.

[0033] Furthermore, unless otherwise specified in this specification, off-current refers to the state in which a transistor is in the off state. This refers to the drain current when the device is in a non-conductive state (also called a closed state). Unless otherwise specified, in an n-channel transistor, the voltage between the gate and source is V g s The threshold voltage V th Lower than (in p-channel transistors, V th Higher ) refers to a state.

[0034] Furthermore, in this specification, the terms "electrode" and "wiring" do not limit the functionality of these components. It is not fixed. For example, "electrode" can be used as part of "wiring". The reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and "wiring". This includes cases where the "lines" are formed as a single unit.

[0035] Furthermore, in this specification, the resistance value of "resistance" may be determined by the length of the wiring. Alternatively, the resistance value may be determined by connecting to a conductor having a different resistivity than the conductor used in the wiring. The resistance may be determined by [specific method]. Alternatively, the resistance value can be determined by doping the semiconductor with impurities. There are cases where this is the case.

[0036] Furthermore, in this specification, etc., "terminal" in an electrical circuit refers to the input or output of current or voltage. This refers to the part where force or signals are received or transmitted. Therefore, a part of the wiring or electrode is a terminal. It may function as such.

[0037] In this specification, metal oxide refers to metals in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called OS) etc. They are classified. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide It is sometimes referred to as an oxide semiconductor. In other words, when it is written as OS FET, This can be rephrased as a transistor having an oxide or oxide semiconductor.

[0038] (Embodiment 1) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to the drawings.

[0039] Figure 1(A) is a perspective view showing an example configuration of an electronic device 10a, which is an electronic device according to one aspect of the present invention. The electronic device 10a is a spectacle-type electronic device, and a pair of display devices 11 (display device 1 1a, display device 11b), a pair of housings 12 (housing 12a, housing 12b), a pair of optical elements 13 (optical member 13a, optical member 13b), pair of mounting parts 14 (mounting part 14a, mounting part 1 4b) A pair of imaging devices 15 (imaging device 15a, imaging device 15b), a pair of display areas 16 (Display area 16a, display area 16b), and a pair of nose pads 17 (nose pad 17a, nose pad 1 It has 7b). The electronic device 10a also has a frame 18 and a camera 19.

[0040] In electronic device 10a, the display device 11a is inside the housing 12a, and the display device 11b is inside the housing 12 Each can be provided inside b. The housing 12a is, for example, the left end side of the frame 18 and The housing 12b is provided so as to be in contact with, for example, the rightmost side of the frame 18. This is possible. Furthermore, the housing 12a is provided so as to be in contact with the rightmost side of the frame 18, 12b may be provided so as to be in contact with the left end side of frame 18.

[0041] The mounting portion 14a is in contact with the housing 12a, and the mounting portion 14b is in contact with the housing 12b. Each can be provided. The display area 16a overlaps with the optical element 13a, 16b can be provided so as to overlap with the optical element 13b. The frame 18 is It can be provided so as to be in contact with the side surface of optical member 13a and the side surface of optical member 13b.

[0042] Camera 19 can be positioned so as to be in contact with frame 18. For example, camera 19 is It can be installed on the bridge of frame 18. In other words, the camera 19 is an optical element 13 It can be provided between a and the optical element 13b. Alternatively, the camera 19 can be provided with a nose piece 17a and It can be provided between the nose piece 17b and the nose piece.

[0043] Display devices 11a and 11b have the function of displaying images. The displayed image can be projected onto the display area 16a by the display device 11b. The displayed image can be projected onto the display area 16b. Therefore, the electronic device 10a The user views the image displayed by the display device 11a through the display area 16a. This is possible. In addition, the image displayed by the display device 11b can be viewed through the display area 16b. It can be recognized.

[0044] The display device 11 preferably has the function of displaying high-resolution images. For example, 100 Preferably, it has the ability to display images with a resolution of 0 ppi or higher, and 2000 ppi or higher. It is more preferable to have the ability to display images with the above resolution, specifically 5000ppi or higher. It is even more preferable that it has the function of displaying fine-grained images. The electronic device 10a is a spectacle-type electronic Because it is a device, the distance between the user's eyes and the display area 16 is short. Therefore, the display device If the resolution of the image displayed by 11 is not high, the user of the electronic device 10a may have a low display area. When viewing the image displayed on 16, a grainy texture may be perceived. Therefore, display device 1 By increasing the resolution of the image displayed by 1, the user of the electronic device 10a can perceive graininess. The image displayed in the display area 16 can be viewed without feeling any discomfort. A specific example of the configuration of a display device capable of displaying an image will be described later.

[0045] The display device 11 has pixels. These pixels include, for example, sub-pixels that have the function of emitting red light. A sub-pixel having the function of emitting green light, and a sub-pixel having the function of emitting blue light It has. Furthermore, the pixels of the display device 11 have sub-pixels that have the function of emitting infrared light. It may be provided. In this case, although the details will be described later, the imaging device 15 detects infrared light. Furthermore, it has a function to detect the user's eyes and the surrounding conditions of the electronic device 10a. Cut.

[0046] The optical element 13 has the function of transmitting incident light. For example, the optical element 13 transmits incident light. It has the function of transmitting visible light. In addition, the optical member 13 has the function of refracting incident light. The optical member 13 has the function of refracting incident light, thus enabling electronic devices. 10a can correct refractive errors in the user's eyes. Therefore, the optical member 13 is, for example For example, it can be a lens. The optical element 13 can be, for example, a concave lens, a convex lens, or a progressive lens. It can be a lens or a multifocal lens. Also, the material of the optical component 13 is, for example, plastic. It can be made of plastic or glass.

[0047] Furthermore, the optical element 13 does not necessarily have to have the function of refracting incident light. For example, if a person without refractive errors in their eyes uses electronic device 10a, the user may experience fatigue or headache. This can suppress feelings such as nausea.

[0048] The optical element 13 is translucent, and a display area 16 is provided, so that the electronic device 10a The user overlays the transmitted image visible through the optical element 13 onto the display area 16. Images can be viewed. Therefore, electronic device 10a is AR (Augmented It can be an electronic device capable of displaying (Reality) images.

[0049] Furthermore, the optical component 13 does not need to be light-transmitting. In this case, the use of the electronic device 10a The user does not perceive the external environment and can only perceive the image displayed in the display area 16. Therefore, the electronic device 10a is an electronic device capable of VR (Virtual Reality) display. It can be made into a device. If the optical member 13 is not light-transmitting, for example, optical member 13a The entire area occupied by the optical element 13b is defined as the display area 16a, and the entire area occupied by the optical element 13b is defined as the display area If area 16b is used, the image visible to the user of the electronic device 10a can be enlarged. Therefore, it is preferable.

[0050] The imaging device 15 has a function to detect light. Here, the imaging device 15 has a function to detect the received light In addition to a sensor (photoelectric conversion element) that has the function of detecting the amount of light, it is preferable to provide a light source. As a result, the light emitted from the light source is shone, for example, onto the face of the user of the electronic device 10a, and is reflected. The light can be detected by a sensor. For example, the imaging device 15 uses the electronic device 10a It can have the function of detecting the user's eyes and the surrounding conditions. Therefore, electronic devices 10a has the function of recognizing the user's facial features, such as the user's facial expressions. For example, it can have a function to estimate the user's fatigue level, emotions, etc.

[0051] The light source provided in the imaging device 15 has the function of emitting, for example, infrared light, for example, near-infrared light. This is preferable. In this case, the sensor provided in the imaging device 15 emits, for example, infrared light, for example It is preferable that the device has a function to detect near-infrared light. Alternatively, a light source provided in the imaging device 15. It is preferable that it has the function of emitting red light, for example. In this case, it is provided on the imaging device 15. The sensor to be used preferably has the function of detecting red light, for example. The sub-device 10a can accurately recognize the user's facial features, such as their facial expressions.

[0052] Furthermore, the sensor provided in the imaging device 15 has, for example, a function that detects far-infrared light. It may have a function to detect, for example, the temperature of the face surface. Therefore, the electronic device 10a can estimate, for example, the user's physical condition, emotions, etc. It can have a function. For example, the imaging device 15 has a function to detect red light. The electronic device 10a has both a sensor and a sensor that has the function of detecting far-infrared light. It is possible to estimate the user's emotions and other feelings more accurately.

[0053] In this specification, infrared light refers, for example, to light with a wavelength of 0.7 μm or more and 1000 μm or less. It is shown. Also, near-infrared light refers to light with a wavelength of 0.7 μm or more and 2.5 μm or less, and Infrared light refers to light with a wavelength of 2.5 μm or more and 4 μm or less. Furthermore, far-infrared light is For example, it refers to light with a wavelength of 4 μm or more and 1000 μm or less. Note that near-infrared light, mid-infrared light, Far-infrared light is sometimes simply referred to as infrared light. Furthermore, in this specification, red light is defined as follows: For example, it refers to light with a wavelength between 0.6 μm and 0.75 μm.

[0054] The imaging device 15 is preferably positioned so as to be in contact with the frame 18. In particular, the optical member 1 An imaging device 15a is provided so as to surround 3a, and an imaging device 15b is provided so as to surround the optical member 13b. It is preferable to provide this. This allows the user's eyes of the electronic device 10a and the imaging device 15 to be connected. Because the distance between them can be shortened, the electronic device 10a can see the user's facial expressions and other information about the user. It can accurately recognize facial features.

[0055] Furthermore, the imaging device 15a completely surrounds the optical element 13a, and the imaging device 15b surrounds the optical element 1 Although 3b is completely surrounded, one aspect of the present invention is not limited thereto. The imaging device 15a may be provided so as to surround only the part, or only a part of the optical member 13b may be provided. The imaging device 15b may be provided to surround the other device. You may provide two or more of each.

[0056] The imaging device 15 does not necessarily need to have a light source. In this case, outside the imaging device 15 A light source is provided. For example, a light source may be provided on the bridge of frame 18. Also, the enclosure A light source is provided between 12a and the optical element 13a, and between the housing 12b and the optical element 13b. Alternatively, by not providing a light source in the imaging device 15, the photoelectric conversion elements can be densely packed in the imaging device 15. It can be set at each interval.

[0057] Furthermore, if the imaging device 15 is not equipped with a light source, the light emitted from the display device 11 may be transmitted to electronic devices, for example. The light that is shone onto the user's face (10a) and reflected is converted by the photoelectric conversion element of the imaging device (15). It can be detected. In this case, the pixels provided on the display device 11 emit infrared light. It is preferable that it has the function of [doing something].

[0058] Camera 19 has the function of imaging the front, that is, the side opposite to the mounting part 14. It can be called an imaging device.

[0059] Next, using Figure 1(B), we will explain the method of projecting an image onto the display area 16 of the electronic device 10a. Let me explain. Inside the housing 12, there is a display device 11, a lens 21, and a reflector 22. Furthermore, the portion of the optical element 13 corresponding to the display area 16 functions as a half-mirror. It has a reflective surface 23.

[0060] Light 25 emitted from the display device 11 passes through the lens 21 and is reflected by the reflector 22 onto the optical element It is reflected towards side 13. Inside the optical member 13, the light 25 is fully reflected at the end face of the optical member 13. By repeatedly emitting light and reaching the reflective surface 23, an image is projected onto the reflective surface 23. The user then receives the light 25 reflected by the reflective surface 23 and the optical member 13 (including the reflective surface 23). Both the transmitted light 26 that has passed through (mu) can be seen.

[0061] Figure 1(B) shows an example where the reflector 22 and the reflective surface 23 each have curved surfaces. This increases the degree of freedom in optical design compared to the case where the reflector 22 and reflective surface 23 are flat. This allows for a reduction in the thickness of the optical element 13. The firing plane 23 may be a flat surface.

[0062] As the reflector 22, a material having a mirror surface can be used, and it is preferable that it has a high reflectivity. Also, as the reflective surface 23, a half-mirror that utilizes the reflection of a metal film may be used. By using a prism or the like that which utilizes total internal reflection, the transmittance of transmitted light 26 can be increased.

[0063] Here, the housing 12 adjusts the distance between the lens 21 and the display device 11, as well as their angles. It is preferable that the device has a mechanism for focusing, as well as for enlarging and reducing the image. This makes it possible to do things like this. For example, if one or both of the lens 21 or the display device 11 are light The configuration should allow for movement in the axial direction.

[0064] Furthermore, it is preferable that the housing 12 has a mechanism that allows the angle of the reflector 22 to be adjusted. By changing the angle of the projectile plate 22, the position of the display area 16 where the image is displayed can be changed. This enables the display area 16 to be positioned optimally according to the user's eye position. This becomes possible.

[0065] Figures 2(A) and (B) show an example configuration of electronic device 10b, which is an electronic device according to one aspect of the present invention. This is an external view. Electronic device 10b is a head-mounted display (HMD). It can be a mounted display. Also, electronic device 10b is a Go It can be called a goggle-type electronic device. Alternatively, electronic device 10b can be called a glasses-type electronic device. It is possible.

[0066] The electronic device 10b includes a housing 31, a display device 33, a fixing device 34, and a pair of optical members 35 ( Optical members 35a, optical members 35b) and a pair of frames 36 (frame 36a, frame 36b) and a pair of imaging devices 37 (imaging device 37a, imaging device 37b), and a light source 40, It has.

[0067] Furthermore, the electronic device 10b is provided with an opening 32, and an optical element is brought into contact with the opening 32. Member 35, frame 36, and light source 40 are provided. Frame 36 is an optical member 3 It is provided so as to be in contact with the side surface of 5 and surrounding the optical element 35. The light source 40 is, for example, light It can be installed between the academic member 35a and the optical member 35b. Also, the display device 33 is It can be installed inside the housing 31.

[0068] The display device 33 has the function of displaying an image. The image displayed on the display device 33 is electronic The user of device 10b can see through the optical element 35. The display device 33 is electric It has the same function as the display device 11 of the child device 10a, which displays high-definition images. This is preferable. For example, if the display device 33 has a display area of ​​8 inches, then 8K It is preferable that the device has the ability to display images with 4K resolution.

[0069] The optical component 35 has the same function as the optical component 13 of the electronic device 10a. The materials and structure of the academic component 35 can be the same as those of the optical component 13.

[0070] The user of the electronic device 10b views the image displayed on the display device 33 through the optical element 35. It can be recognized. Electronic device 10b can be an electronic device capable of VR display. .

[0071] The imaging device 37 has a function to detect light. The imaging device 37 is equipped with a photoelectric conversion element. Since the electronic device 10b is equipped with a light source 40, the imaging device 37 is equipped with a light source. It's not necessary.

[0072] The electronic device 10b has an imaging device 37 and a light source 40, and the light source 40 emits Light is shone, for example, onto the face of the user of the electronic device 10b, and the reflected light is detected by the imaging device 37. It can output. For example, the imaging device 37 can output the user's eyes and surrounding area of ​​the electronic device 10b. It can have a function to detect the state of the edges. Therefore, electronic device 10b is electronic device 1 Similar to 0a, it can have the function of recognizing the user's facial features, such as their facial expressions. Therefore, it can have functions to estimate, for example, the user's level of fatigue, emotions, etc.

[0073] The light source 40 preferably has the function of emitting, for example, infrared light, or for example, near-infrared light. In this case, it is preferable that the imaging device 37 has a function to detect, for example, infrared light, or for example, near-infrared light. It is preferable that the light source 40 has the function of emitting red light, for example. In addition, it is preferable that the imaging device 37 has a function to detect, for example, red light. The electronic device 10b can accurately recognize the user's facial features, such as their facial expressions. Furthermore, the imaging device 37, like the imaging device 15 of the electronic device 10a, uses, for example, far-infrared technology. It may also have a function to detect external lines.

[0074] Note that the electronic device 10b does not necessarily have a light source 40. In this case, the display device 33 may have a red light source. By providing pixels that have the function of emitting ambient light, the imaging device 37 can be used as, for example, an electronic device 1 It can have the function of detecting the user's eyes and the surrounding conditions.

[0075] It is preferable that the imaging device 37a be positioned in contact with the frame 36a. It is preferable that the component 37b is provided so as to be in contact with the frame 36b. Because the distance between the user's eye of the device 10b and the imaging device 37 can be shortened, electronic Device 10b can accurately recognize the user's facial features, such as their facial expressions.

[0076] Furthermore, the imaging device 37a completely surrounds the optical element 35a, and the imaging device 37b surrounds the optical element 3 Although 5b is completely surrounded, one aspect of the present invention is not limited thereto. The imaging device 37a may be provided so as to surround only the part, or only a part of the optical member 35b may be provided. The imaging device 37b may be provided to surround it. Alternatively, imaging devices 37a and 37b You may provide two or more of each.

[0077] In Figures 2(A) and (B), the imaging device 37 is positioned so as to be in contact with the frame 36. However, the present invention is not limited to this. For example, the imaging device 37 may be brought into contact with the aperture 32. They may be provided. For example, as shown in Figure 3(A), the optical member 35 and the frame 36 may be removed. An imaging device 37 may be provided to surround it. Also, as shown in Figure 3(B), the optical member 3 The imaging device 37 is positioned to surround 5 and be in contact with frame 36, and the frame 36 is also positioned Another imaging device 37 may be provided to surround and contact the opening 32.

[0078] Furthermore, the electronic device 10b does not necessarily have to have an imaging device 37. In this case, for example, see Figure 3( As shown in C), the light source 40a is placed so as to be in contact with frame 36a, and the frame 36b and The light source 40b can be positioned so as to be in contact with it. In other words, the imaging device 37 can be placed near the light source 40. It can be replaced. If the electronic device 10b does not have an imaging device 37, for example, the display device 3 A photoelectric conversion element is provided in 3. In other words, the display device 33 is given the function of an imaging device. Furthermore, the electronic device 10b has a function to detect, for example, the user's eyes and the surrounding conditions. It is possible.

[0079] Figure 4 is a block diagram showing an example configuration of electronic device 10 (electronic device 10a, electronic device 10b). Yes. The electronic device 10 includes an information display unit 51, a subject detection unit 52, a feature extraction unit 53, and an estimation unit 5 4. It has an information generation unit 55.

[0080] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although a block diagram is shown as an example, the actual components are not completely separated by function. This is difficult because one component can be involved in multiple functions, or one function can be involved in multiple components. It could potentially be achieved.

[0081] The information display unit 51 provides information to the user of the electronic device 10 through sight, smell, hearing, or touch. It has the function of providing stimulation. The information presentation unit 51 is generated by the information generation unit 55, which will be described later. Information can be presented (output) to the user of the electronic device 10. Electronic device 10a The display area 16 of the device and the display device 33 of the electronic device 10b are the information presentation unit 51 It can be said that it is a part of, or that it has an information display section 51.

[0082] Various hardware can be used as the information display unit 51. For example, electronic device 1 When stimulating (or presenting information to) the user's vision, display an image. Use a display device that can change the brightness or chromaticity, or a lighting device that can change the brightness or chromaticity. It is possible to do so. Also, for example, as a device that stimulates the sense of smell, vibration or heat can be used. Aroma diffusers that release fragrance can be used. In addition, auditory stimulation can be used. The devices to be provided include audio output devices such as speakers, headphones, or earphones. It can be used. Also, as a device that provides tactile stimulation, vibration A control device or similar can be used.

[0083] The subject detection unit 52 acquires information such as a part of the face of the user of the electronic device 10, and specially processes that information. It has a function to output to the extraction unit 53. The imaging device 15 and electronic equipment 10a have an electronic The imaging device 37 of the device 10b is part of the subject detection unit 52, or the subject detection unit It can be said that it has 52.

[0084] The feature extraction unit 53 extracts feature points from the face information output from the subject detection unit 52, and The features of part or all of the face are extracted from the location of the feature points, and the information of the extracted features is processed by the estimation unit 54. It has the function to output to [a specific location].

[0085] If the facial information acquired by the subject detection unit 52 is information about the eyes and their surroundings, the feature extraction unit Features extracted by 53 include, for example, the pupil, iris, cornea, conjunctiva (white of the eye), inner corner of the eye, outer corner of the eye, and upper eyelid. Examples include eyelids, lower eyelids, eyelashes, eyebrows, the space between the eyebrows, the inner corners of the eyebrows, and the outer corners of the eyebrows. Also, the eyes and their Other features besides the surrounding area include the nasal root, nasal tip, columella, nostrils, lips (upper lip, lower lip), corners of the mouth, cleft lip, These include teeth, cheeks, jaw, jawline, and forehead. The feature extraction unit 53 extracts the shape and position of these facial parts. It recognizes the location and extracts the position coordinates of feature points in each part. Position coordinate data and other information can be output to the estimation unit 54 as facial feature information.

[0086] The feature extraction method used by the feature extraction unit 53 is as follows: from the image acquired by the subject detection unit 52 Various algorithms can be applied to extract feature points. For example, SIFT(S cale Invariant Feature Transform), SURF(S peed Up Robust Features), HOG (Histogram Algorithms such as (s of Oriented Gradients) can be used. Cut.

[0087] In particular, feature extraction by the feature extraction unit 53 is performed by inference using a neural network. It is preferable to do so. The following describes the case where a neural network is used. .

[0088] Figure 5(A) shows a model of the neural network NN1 that can be used in the feature extraction unit 53. This is shown formulaically. The neural network NN1 has an input layer 61, three hidden layers 62, and output It has a force layer 63. Note that the number of intermediate layers 62 is not limited to three; one or more are sufficient.

[0089] The neural network NN1 receives the data 71 generated by the subject detection unit 52. Data 71 contains coordinates and the values ​​corresponding to those coordinates. Typically, This can be image data containing a target and the corresponding grayscale value. Data 72 is output from the twerk NN1. Data 72 represents the position of the feature points mentioned above. This data includes coordinates.

[0090] The neural network NN1 extracts the aforementioned feature points from data 71, such as image data. The neural network is pre-trained to output coordinates. In NN1, edge processing using various filters is performed in the intermediate layer 62, as described above. The system is trained so that the neuron values ​​in the output layer 63 corresponding to the coordinates where the feature points exist become higher. Yes, they are.

[0091] The estimation unit 54 uses the facial feature information input from the feature extraction unit 53 to determine the usage of the electronic device 10. It has a function to estimate the fatigue level, physical condition, emotions, etc. of the person and output the estimated information to the information generation unit 55. Here, the estimation unit 54 has the function of estimating the degree (level) of fatigue, physical condition, emotions, etc. It is preferable to have it.

[0092] The estimation by the estimation unit 54 is preferably performed by inference using a neural network. It seems so.

[0093] Figure 5(B) schematically shows a neural network NN2 that can be used in the estimation unit 54. As shown in Figure 5(B), when the estimation unit 54 estimates the emotions of the user of the electronic device 10, This indicates that the neural network NN2 is generally a neural network NN An example with a similar configuration to 1 is shown. Note that this is the input layer of the neural network NN2. The number of neurons can be fewer than that of the neural network NN1, which has 61 neurons. .

[0094] The neural network NN2 receives the data 72 generated by the feature extraction unit 53 as input. Data 72 contains information relating to the coordinates of the extracted feature points.

[0095] Furthermore, the data 72 was processed to be input to the neural network NN2. You may use data. For example, you can calculate a vector connecting any two feature points and use this The results obtained for all or some of the feature points are then processed by the neural network NN2. This can also be used as input data. Alternatively, the calculated vector can be used as normalized data. . In the following, the data 72 output by the neural network NN1 has been processed. "Ta" is also written as "Data 72".

[0096] When data 72 is input to the neural network NN2, data 73 is output. Data 73 corresponds to the neuron value output from each neuron in the output layer 63. Each neuron in the force layer 63 is associated with one emotion. This is shown in Figure 5(B). As shown above, data 73 corresponds to a given emotion (joy, pleasure, surprise, excitement, disgust, etc.). This data includes neuron values ​​for eurons.

[0097] The neural network NN2 estimates the degree of each emotion from data 72, and the neural network It is pre-trained to output as a value. The user's face is The relative positional relationship of multiple feature points determines the user's facial features, such as expressions. Therefore, the neural network NN2 can determine the user's facial features. It is possible to estimate the emotions being felt.

[0098] Figure 5(C) is a schematic diagram showing data 73. The neurotransmitters corresponding to each emotion A higher value indicates a higher estimated degree of emotion. The estimation unit 54 estimates The degree of one emotion can be used to estimate the degree of another emotion. The data included is referred to as Data 74. Figure 5(C) shows joy, pleasure, surprise, excitement, disgust, etc. This shows how the degree of interest can be estimated from the degree of other emotions.

[0099] The degree of interest included in Data 74 is similar to the degree of pleasure and enjoyment included in Data 73, for example. Estimating the degree of emotions such as grief, surprise, excitement, and disgust by inputting them into a predetermined formula. This is possible. For example, the greater the degree of feelings of joy, pleasure, surprise, and excitement, the greater the feeling of interest. The greater the degree of aversion, the less interest you will feel. Therefore, you can set the formula.

[0100] Furthermore, the estimation of fatigue levels, physical condition, emotions, etc., can also be performed without using neural networks. For example, the image of a part of the face of the user of the electronic device 10 acquired by the subject detection unit 52 and By comparing it with a template image and using a template matching method that uses the similarity, This may be done. In that case, the configuration may not include the feature extraction unit 53.

[0101] The information generation unit 55 generates information based on the fatigue level, physical condition, emotions, etc. estimated by the estimation unit 54, and then generates information for the electronic device 1 It has the function of determining or generating information to be presented to the user of 0 and outputting it to the information presentation unit 51. As a result, the information presentation unit 51 presents information corresponding to the information generated by the information generation unit 55. It is possible.

[0102] For example, if the information display unit 51 has the function of displaying an image, the information generation unit 55 will display it. The information display unit 51 can generate or select an image and output it to the information display unit 51. If unit 1 functions as a lighting device, the information generation unit 55 will determine the brightness (illuminance) of the lighting and The color can be determined and output to the information display unit 51. In addition, the information display unit 51 can detect scent If the device has a function to disperse fragrance, the information generation unit 55 determines the type of fragrance to be dispersed, or the fragrance It can determine the strength of the signal and output signals to control the operation of the information display unit 51. Furthermore, if the information presentation unit 51 has a function to output sound, the information generation unit 55 will play it back. The system can generate or select audio and output it to the information display unit 51 along with information about the volume to be played. It can. Also, if the information presentation unit 51 has a function to induce vibration, the information generation unit 55 The vibration pattern and intensity are determined, and signals are output to control the operation of the information display unit 51. It is possible.

[0103] The above is a description of an example configuration of the electronic device 10.

[0104] Furthermore, the data 72 output from the feature extraction unit 53 is not input to the estimation unit 54, and information generation is performed. You may also input directly into section 55. For example, the facial expression of the user of the electronic device 10 may be estimated. Even without the estimation by the unit 54, it can be detected by extracting feature points by the feature extraction unit 53. In such a case, by directly inputting the data 72 output from the feature extraction unit 53 to the information generation unit 55, the power consumption of the electronic device 10 can be reduced.

[0105] FIG. 6(A) is a diagram showing an example of the usage mode of the electronic device 10. In FIG. 6(A), a state where the user 81 of the electronic device 10 and the user 82 of another electronic device 10 are having a conversation is shown. Specifically, a state where the user 82 is talking to the user 81 is shown.

[0106] The electronic device 10 shown in FIG. 6(A) has a configuration in which a transmitter 56 and a receiver 57 are provided in the electronic device 10a shown in FIG. 1(A). Also, the electronic device 10b shown in FIG. 2(A) may have a configuration in which a transmitter 56 and a receiver 57 are provided.

[0107] The transmitter 56 and the receiver 57 can be provided inside the housing 12. The transmitter 56 can be a wireless transmitter, and the receiver 57 can be a wireless receiver. Note that the transmitter 56 and the receiver 57 do not necessarily have to be provided inside the housing 12. For example, the transmitter 56 and the receiver 57 may be provided outside the housing 12 so as to be in contact with the housing 12. Also, the transmitter 56 and the receiver 57 may be integrated.

[0108] The transmitter 56 has a function of transmitting the information generated by the information generation unit 55 to the outside of the electronic device 10. In FIG. 6(A), a case where the information generated by the information generation unit 55 is transmitted to another electronic device 10 is shown.

[0109] The receiver 57 has a function of receiving information from the outside of the electronic device 10. For example, another electronic It has the function of receiving information transmitted from the transmitter 56 of the device 10. The received information is, for example, For example, it can be displayed on the information display unit 51.

[0110] In the case shown in Figure 6(A), user 81 hears what user 82 is saying, thereby allowing user 82 to hear what user 82 is saying. The electronic device 10 used by user 81 estimates the emotions felt by user 81. For example, user 8 The electronic device 10 used by user 81 estimates the degree of interest in the content of story 2. Information indicating the user 81's level of interest is provided on the electronic device 10 used by user 81. The information transmitted from transmitter 56 is used by user 82. The receiver 57 receives the information. The information received by the receiver 57 is presented by the information presentation unit 51. .

[0111] Figure 6(B) shows the field of view of user 82. In addition to user 81, user 82's field of view is also shown. The information display unit 51 includes the electronic information used by the user 82. Information received by the receiver 57 of the device 10 is displayed. For example, the user 81's interest The degree of flavor is displayed. Therefore, user 82 can know the degree of interest of user 81. This can be done. For example, if user 81's level of interest is low, the topic can be changed. This allows us to find out what topics user 81 is interested in. In this case, user 81 can gauge the degree of interest of user 82.

[0112] Alternatively, the information display unit 51 of the electronic device 10 may display information such as the fatigue level and physical condition of other users of the electronic device 10. This may be displayed. This allows the user of electronic device 10 to see the information of other users of electronic device 10. It is possible to know the level of fatigue, physical condition, etc. Therefore, for example, the user of electronic device 10 can know their level of fatigue. We can show consideration by encouraging those with high levels of fatigue or those who are not feeling well to take a rest. To be able to do so. Or, to be able to provide accurate advice on health management.

[0113] Figure 7 is a block diagram showing an example configuration of the electronic device 10 shown in Figure 6(A), and the configuration shown in Figure 4 This is a modified version of the configuration. The electronic device 10 with the configuration shown in Figure 7 has a transmitter 56 and a receiver 57. In this respect, it differs from the electronic device 10 with the configuration shown in Figure 4.

[0114] As shown in Figure 7, the information generated by the information generation unit 55 is supplied to the transmitter 56. The information is transmitted externally from the electronic device 10 by the transmitter 56.

[0115] The receiver 57 receives information from outside the electronic device 10. For example, from another electronic device 10. It is possible to receive transmitted information. Or, transmitted from electronic devices other than electronic device 10. It can receive transmitted information. Or, it can receive broadcast radio waves, etc. Receiver 5 The information received by 7 is presented by the information presentation unit 51. For example, the information received by receiver 57 The image corresponding to the information can be displayed in the display area of ​​the information presentation unit 51.

[0116] This embodiment can be appropriately combined with other embodiments described herein, at least in part. They can be implemented together.

[0117] (Embodiment 2) In this embodiment, a display device, a light source, and an electronic device according to one aspect of the present invention are provided. I will now explain the imaging equipment and other related devices.

[0118] <Example of display device configuration 1> FIG. 8 is a block diagram showing a configuration example of a display device 810 according to an aspect of the present invention. The display device 810 has a layer 820 and a layer 830 laminated above the layer 820. The layer 820 has a gate driver circuit 821, a source driver circuit 822, and a circuit 840. The layer 830 has pixels 834, and the pixels 834 are arranged in a matrix to form a pixel array 833. An interlayer insulator can be provided between the layer 820 and the layer 830. Note that the layer 820 may be laminated and provided above the layer 830.

[0119] The circuit 840 is electrically connected to the source driver circuit 822. Note that the circuit 840 may be electrically connected to other circuits or the like.

[0120] Pixels 834 in the same row are electrically connected to the gate driver circuit 821 via a wiring 831, and pixels 834 in the same column are electrically connected to the source driver circuit 822 via a wiring 832. The wiring 831 has a function as a scanning line, and the wiring 832 has a function as a data line.

[0121] In FIG. 8, a configuration is shown in which pixels 834 in one row are electrically connected by one wiring 831, and pixels 834 in one column are electrically connected by one wiring 832. However, one aspect of the present invention is not limited to this. For example, pixels 834 in one row may be electrically connected by two or more wirings 831, or pixels 834 in one column may be electrically connected by two or more wirings 832. That is, for example, one pixel 834 may be electrically connected to two or more scanning lines, or may be electrically connected to two or more data lines. Alternatively, for example, one wire 831 may be electrically connected to two or more rows of pixels 834. It is also acceptable for one wire 832 to be electrically connected to two or more rows of pixels 834. In other words, for example, one wire 831 may be shared by two or more rows of pixels 834, or one wire The wiring 832 may be shared by two or more rows of pixels 834.

[0122] The gate driver circuit 821 generates signals to control the operation of the pixel 834, and wiring 8 Source driver circuit 822 has the function of supplying the signal to the pixel 834 via 31. It has the function of generating an image signal and supplying the signal to the pixel 834 via wiring 832. Circuit 840, for example, is the basis for the image signal generated by source driver circuit 822. It has the function of receiving image data and supplying the received image data to the source driver circuit 822. In addition, circuit 840 generates a start pulse signal and a clock signal, etc., and controls the circuit. It functions as a path. In addition, circuit 840 has a gate driver circuit 821 and a source This circuit can have functions that the driver circuit 822 does not possess.

[0123] The pixel array 833 corresponds to the image signal supplied to the pixel 834 by the source driver circuit 822. It has the function of displaying an image. Specifically, it uses light with a brightness corresponding to the above image signal to display pixels. By ejecting from 834, an image is displayed on the pixel array 833.

[0124] In Figure 8, the positional relationship between layer 820 and layer 830 is shown by a dashed line and a white circle, The white circles in layer 820 and layer 830, connected by a dashed line, overlap each other. The same notation will be used in other figures as well.

[0125] The display device 810 includes a gate driver circuit 821 and a source driver provided in layer 820. Circuit 822 has an area that overlaps with the pixel array 833. For example, gate driver circuit The path 821 and the source driver circuit 822 have an area that overlaps with the pixel 834. The source driver circuit 821 and the source driver circuit 822, and the pixel array 833 are connected to each other. By stacking them so that they have overlapping areas, the display device 810 can be made to have a narrow bezel. This can be done, and it can also be miniaturized.

[0126] Furthermore, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated, and It has a region. Let this region be called region 823. By having region 823, The area occupied by the source driver circuit 821 and the source driver circuit 822 can be reduced. Therefore, even if the area of ​​the pixel array 833 is small, the gate driver circuit 8 The 21 and source driver circuit 822 are provided without extending beyond the pixel array 833. This can be done. Alternatively, the gate driver circuit 821 and the source driver circuit 822, the pixel The area of ​​the region that does not overlap with ray 833 can be reduced. Therefore, region 823 It is possible to achieve an even narrower bezel and a smaller size compared to not having it.

[0127] Circuit 840 can be installed so as not to overlap with the pixel array 833. 40 may be provided so as to have an area that overlaps with the pixel array 833.

[0128] Figure 8 shows that layer 820 contains one gate driver circuit 821 and one source driver circuit 822. The example shown has two layers, and one pixel array 833 is provided in layer 8. Multiple pixel arrays 833 may be provided in layer 30. That is, pixel arrays provided in layer 830 It may be divided. Figure 9 is a modified example of the configuration shown in Figure 8, with layer 830 having 3 rows and 3 columns of pixels. This shows an example configuration of the display device 810 when array 833 is provided. 0 may have a 2x2 pixel array 833, or a 4x4 or larger pixel array A ray 833 may be provided. Also, a row of the pixel array 833 provided in layer 830 The number and the number of columns may be different. In the display device 810 with the configuration shown in Figure 9, for example, all images A single image can be displayed using the 833 array.

[0129] Figure 9 omits wiring 831 and 832 for clarity, but in reality... The display device 810, as shown in Figure 9, is provided with wiring 831 and wiring 832. Also, although the electrical connections of circuit 840 are omitted, in reality, the source driver circuit 8 It is electrically connected to 22. Note that in other figures, some components are similar to those in Figure 9. In some cases, the following may be omitted:

[0130] Layer 820 contains a gate driver circuit 821 and a source driver circuit 822, for example, a pixel The same number as array 833 can be provided. In this case, the gate driver circuit 821 is the same A pixel array 833 is provided with a pixel 834 to which a gate driver circuit 821 supplies a signal. They can be installed so as to overlap. Also, the source driver circuit 822 is connected to the source driver The IBA circuit 822 overlaps with the pixel array 833, which is equipped with pixels 834 that supply image signals. It can be set up in this way.

[0131] Multiple pixel arrays 833 are provided, and gate driver circuits 821 and source drivers are provided accordingly. By providing the IBA circuit 822, the pixels 834 provided in one pixel array 833 The number can be reduced. The multiple gate driver circuits 821 are each in parallel. The multiple source driver circuits 822 can be operated in parallel. Because it can be operated in this way, for example, the image signal corresponding to one frame of an image is 8 pixels The time required to write to 34 can be shortened. Therefore, the length of one frame period This shortens the time interval and speeds up the operation of the display device 810. Therefore, The number of pixels 834 in the display device 810 can be increased, and the resolution of the display device 810 can be improved. The degree can be increased. Furthermore, it can be displayed by a display device according to one aspect of the present invention. The image resolution is determined by ensuring that the gate driver circuit and source driver circuit do not overlap with the pixel array. The resolution of the image can be increased beyond what can be displayed by the display device of the configuration. This allows the clock frequency to be reduced, thereby reducing the power consumption of the display device 810. It is possible.

[0132] Here, the gate driver circuit and source driver circuit are configured so that they do not overlap with the pixel array. In this case, the gate driver circuit and source driver circuit are installed, for example, on the outer periphery of the pixel array. This will result in the provision of more than 2 rows and 2 columns of pixel arrays. It is difficult from the standpoint of the location of the driver circuit. On the other hand, in the display device 810, the gate driver The circuit and source driver circuit are placed on a different layer from the layer on which the pixel array is located. Therefore, it can be provided so as to have an area that overlaps with the pixel array, as shown in Figure 9. It is possible to provide more than 2 rows and 2 columns of pixel arrays. In other words, the display device 810 has , five or more gate driver circuits and five or more source driver circuits can be provided. .

[0133] Based on the above, the display device 810 has a gate driver circuit and a source driver circuit that are located in the pixel array. For example, it can operate faster than a display device with a configuration that does not overlap. The resolution of device 810 is determined by the overlap of the gate driver circuit and source driver circuit with the pixel array. It can be made higher than a display device with a non-standard configuration. For example, the pixel density of the display device 810 can be increased by 1 It can be 000ppi or higher, 5000ppi or higher, and 10000 It can be set to ppi. Therefore, the display device 810 can display a high-quality image with less graininess. It can display images that offer a high level of realism.

[0134] Furthermore, the resolution of the image that can be displayed by the display device 810 is determined by the gate driver circuit And the source driver circuit can be displayed on a display device in which the source driver circuit does not overlap with the pixel array. The resolution of the image can be increased beyond what is possible. For example, the display device 810 can handle 4K2K and 8K. It can display images with a resolution of 4K or higher. Also, the display device 810 can be used to display small images. It can be molded. For example, the size of the display area of ​​the display device 810 can be set to 8 inches or less. It is possible.

[0135] Furthermore, multiple source driver circuits 822, etc. are provided in layer 820, and a pixel array 8 is provided in layer 830. Even in a configuration where multiple 33s are provided, they are provided on the display device 810, as in the case shown in Figure 8. The number of circuits 840 that can be used can be 1. Therefore, as shown in Figure 9, the circuit 8 40 can be positioned so as not to overlap any of the pixel arrays 833. The path 840 may be provided such that it has an area that overlaps with any of the pixel arrays 833.

[0136] Figure 9 shows an example configuration in which the same number of gate driver circuits 821 as the number of pixel arrays 833 are provided. However, the present invention is not limited to this. Figure 10 is a modified example of the configuration shown in Figure 9. When the number of gate driver circuits 821 is the same as the number of rows in the pixel array 833, the display device This shows an example configuration of the display device 810. In the display device 810 with the configuration shown in Figure 10, there are three rows of pixels. Because ray 833 is provided, three gate driver circuits 821 are provided. Furthermore, a pixel array 833 with 3 rows is provided, and one pixel array 833 with 3 rows and 1 column is provided. It shares the same driver circuit 821.

[0137] Figure 11 shows a modified configuration of the one shown in Figure 9, in which multiple pixel arrays 833 are provided, and gated Figure 1 shows an example configuration of the display device 810 when one driver circuit 821 is provided. In the display device 810 with the configuration shown in 1, a 3x3 pixel array 833 is connected by a single gate drive. The gated circuit 821 is shared. In the display device 810 with the configuration shown in Figure 11, the gated The driver circuit 821 can be configured so that it does not overlap with the pixel array 833.

[0138] Although not shown in the diagram, the source driver circuit 822 is also configured to be the same number as the pixel array 833. It is not necessary to do so. The number of source driver circuits 822 in the display device 810 is, The number of pixels may be greater than or less than the number of pixels in the pixel array 833 provided at position 810.

[0139] Figure 8 shows an example configuration in which a circuit 840 is provided in layer 820, but layer 820 has a circuit 840 It is not necessary to provide it. Figure 12 is a modified example of the configuration shown in Figure 8, in which the layer 830 has a circuit 840. This shows an example of the configuration of the display device 810 when a is provided. Note that the circuit 840 is configured as follows. The elements may be distributed between layers 820 and 830.

[0140] Figure 8 shows an example configuration in which one pixel array 833 and one gate driver circuit are provided. However, the gate driver circuits may be provided in greater numbers than the pixel array 833. Figure 13 is a diagram. This is a modified configuration of the one shown in 8, with two gate driver circuits for one pixel array 833. Display device when (gate driver circuit 821a, gate driver circuit 821b) is provided. This shows an example configuration for 810.

[0141] In the display device 810 with the configuration shown in Figure 13, the pixels 834 in odd-numbered rows are connected via wiring 831a. The gate driver circuit 821a is electrically connected, and the pixels 834 in even-numbered rows are connected to wiring 83 It is electrically connected to the gate driver circuit 821b via 1b. Wiring 831a and Wiring 831b functions as a scan line, similar to wiring 831.

[0142] The gate driver circuit 821a generates signals to control the operation of the odd-numbered row pixels 834. The gate driver has the function of supplying the signal to the pixel 834 via wiring 831a. The IBA circuit 821b generates signals to control the operation of the even-numbered row pixels 834 and wires them together. It has the function of supplying the signal to the pixel 834 via 831b.

[0143] Gate driver circuits 821a and 821b are gate driver circuit 8 Similar to 21, it has a region that overlaps with the pixel array 833. For example, gate driver rotation The path 821a and gate driver circuit 821b are similar to the gate driver circuit 821, It has a region that overlaps with element 834. Also, the gate driver circuit 821a is a source driver It has a region 823a that is not clearly separated from the IBA circuit 822 and overlaps with it. Furthermore, The gate driver circuit 821b is not clearly separated from the source driver circuit 822, and overlaps with it. It has region 823b, which is a region.

[0144] In the display device 810 with the configuration shown in Figure 13, the gate driver circuit 821a is operated to odd numbers After writing the image signal to all pixels 834 of the row, the gate driver circuit 821b is activated. This allows the image signal to be written to all 834 pixels in the even-numbered rows. That is, Figure 13 The display device 810 with the configuration shown can be operated using an interlaced method. By operating using an interlaced method, the operation of the display device 810 is accelerated, The frame frequency can be increased. Also, the image signal is written to the image during one frame period. The number of elements 834 is half the number when the display device 810 is operated using the progressive method. This is possible. Therefore, when the display device 810 is operated using the interlaced method... This allows for a lower clock frequency compared to when operating in a progressive mode. Therefore, the power consumption of the display device 810 can be reduced.

[0145] Figure 8 shows an example configuration in which only one end of the wiring 832 is connected to the source driver circuit 822. However, multiple points on wiring 832 may be connected to source driver circuit 822. Figure 14 shows the case where the source driver circuit 822 is connected to both ends of the wiring 832. This shows an example configuration of the display device 810. Multiple points of the wiring 832 are connected to the source driver circuit 82. By connecting to 2, signal delays caused by wiring resistance, parasitic capacitance, etc., are suppressed. This allows for faster operation of the display device 810.

[0146] Furthermore, not only one end and the other end of wiring 832, but also other parts of wiring 832 are source driver circuits It may be connected to path 822. For example, the center of wiring 832 may be the source driver circuit It may also be connected to 822. The connection point between wiring 832 and source driver circuit 822. By increasing the number of locations, signal delays and the like can be further suppressed, and the display device 810 The operation can be made even faster. For example, one end of wiring 832 and the other end of wiring 832 The central part is connected to the source driver circuit 822, and the other end of wiring 832 is connected to the source driver It does not need to be connected to circuit 822.

[0147] Furthermore, if one source driver circuit 822 is connected to multiple locations on the wiring 832, As shown in 14, the area occupied by the source driver circuit 822 increases. However, the source driver circuit 822 is stacked such that it has an overlapping region with the pixel array 833. Because of this feature, it is possible to suppress the increase in size of the display device 810. In Figure 14, the entire gate driver circuit 821 is clearly separated from the source driver circuit 822. Although they are overlapping and not separated, one source driver circuit 822 is connected to multiple points on wiring 832. Even when connected, only a portion of the gate driver circuit 821 is connected to the source driver circuit. It can also be configured to overlap with 822.

[0148] Note that multiple points on wiring 831 may be connected to a single gate driver circuit 821. This also helps to suppress signal delays and speed up the operation of the display device 810. In this configuration, the occupied surface is similar to that of the source driver circuit 822 shown in Figure 14. The product becomes large, but the gate driver circuit 821 has a region that overlaps with the pixel array 833. Because they are arranged in a stacked manner, it is possible to suppress the increase in size of the display device 810. can.

[0149] The configuration of the display device 810 shown in Figures 8 to 14 can be combined as appropriate. For example, The configuration shown in Figure 9 and the configuration shown in Figure 13 can be combined. In this case, the display device The configuration of 810 is, for example, to provide multiple pixel arrays 833 and the gate driver circuit is for the pixel array The number of I-833s is doubled, and the number of source driver circuits 822 is the same as the number of pixel arrays 833. The configuration can be set up as described above.

[0150] <Example configuration of circuit 840 and source driver circuit 822> Figure 15 is a block diagram showing an example configuration of circuit 840 and source driver circuit 822. Note that while Figure 15 shows only one source driver circuit 822, there are multiple circuits 840. This configuration allows for electrical connection with the source driver circuit 822.

[0151] Circuit 840 consists of a receiving circuit 841, a serial-to-parallel conversion circuit 842, and a potential generation circuit 8 46a and . The source driver circuit 822 has a buffer circuit 843 and a shift register The sta circuit 844, the latch circuit 845, the pass transistor logic circuit 846b, and It has a pump circuit 847 and a potential generation circuit 846a and a pass transistor logic. The 846b circuit and the 846 digital-to-analog conversion circuit (hereinafter referred to as the DA conversion circuit) To compose.

[0152] The receiving circuit 841 is electrically connected to the serial-to-parallel conversion circuit 842, and serial-to-parallel The shift conversion circuit 842 is electrically connected to the buffer circuit 843, and the buffer circuit 843 is shift It is electrically connected to the shift register circuit 844 and the latch circuit 845. Circuit 844 is electrically connected to latch circuit 845, and the latch circuit 845 and potential generation circuit 846a is electrically connected to the pass transistor logic circuit 846b. The transistor logic circuit 846b is electrically connected to the input terminal of the amplifier circuit 847, and The output terminal of circuit 847 is electrically connected to wiring 832.

[0153] The receiving circuit 841 receives the image data that forms the basis of the image signal generated by the source driver circuit 822. It has the function of receiving. The image data can be single-ended image data. Yes, it is possible. The receiving circuit 841 is LVDS (Low Voltage Differential). When receiving image data using data transmission signals such as al Signaling, It may also have a function to convert the signal into a format that can be processed internally.

[0154] The serial-to-parallel conversion circuit 842 receives the single-ended image output by the receiving circuit 841. It has the function of converting data to parallel. Serial-to-parallel conversion circuit 842 in circuit 840. By providing this, the transmission of image data, etc. from circuit 840 to source driver circuit 822, etc. Even with a heavy load during transmission, image data etc. can be transmitted from circuit 840 to source driver circuit 822, etc. It will become possible to transmit data.

[0155] The buffer circuit 843 can be, for example, a unity-gain buffer. Track 843 carries the same data as the image data output from the serial-to-parallel conversion circuit 842. It has the function of outputting. A buffer circuit 843 is provided in the source driver circuit 822. Therefore, the potential corresponding to the image data output from the serial-to-parallel conversion circuit 842 is When the signal is transmitted from circuit 840 to source driver circuit 822, it decreases due to wiring resistance, etc. Even if this happens, the resulting decrease can be recovered. This allows the source driver from circuit 840 to... Even if the load is high when transmitting image data etc. to the IBA circuit 822 etc., the source driver circuit 8 This can suppress the decrease in driving capacity of components such as 22.

[0156] The shift register circuit 844 generates signals to control the operation of the latch circuit 845. It has the function of holding the image data output by the buffer circuit 843. It has the function of outputting. In the latch circuit 845, either holding or outputting image data Whether to perform these operations is selected based on the signal supplied from the shift register circuit 844. ru.

[0157] The DA conversion circuit 846 converts the digital image data output by the latch circuit 845 into analog It has the function of converting to an image signal. The potential generation circuit 846a has the function of converting to an image data that can be converted to DA. It generates a type of potential corresponding to the number of bits in the transistor and supplies it to the pass transistor logic circuit 846b. It has the function of supplying data. For example, the DA conversion circuit 846 converts 8-bit image data into analog data. If it has the function of converting to an image signal, the potential generation circuits 846a are of different sizes It can generate 256 different types of electrical potentials.

[0158] The pass transistor logic circuit 846b receives image data from the latch circuit 845. Based on the digital values ​​of the received image data, the potential generated by the potential generation circuit 846a It has a function to output the difference. For example, the larger the digital value of the image data, the greater the past value. The potential output by the transistor logic circuit 846b can be increased. The potential output by the Zista logic circuit 846b can be used as an image signal.

[0159] As shown in Figure 15, the display device 810 uses the circuits constituting the DA conversion circuit 846 as the source. The driver circuit can be configured to be distributed between the driver circuit 822 and the circuit 840. Specifically, , such as the pass transistor logic circuit 846b, which is provided for each source driver circuit. A preferred circuit is provided in the source driver circuit 822, such as the potential generation circuit 846a. Circuits that do not need to be provided for each source driver circuit are provided in circuit 840. Yes, it is possible. This allows all the circuits that make up the DA conversion circuit 846 to be routed through the source driver circuit. By installing it in the path 822, the area occupied by the source driver circuit 822 can be reduced. Therefore, the number of source driver circuits 822 provided in layer 820 can be increased. Therefore, the number of pixel arrays 833 provided in layer 830 can be increased, and the display device 8 10 improvements include faster operation, reduced power consumption, improved resolution, and increased resolution of displayable images. This can be achieved. Here, even in circuits other than the DA conversion circuit 846, the said circuit The components are configured to be distributed and provided to the source driver circuit 822 and the circuit 840. This is possible.

[0160] As shown in FIG. 15, when the circuits constituting the DA conversion circuit 846 are configured to be distributed and provided to the source driver circuit 8 22 and the circuit 840, the display device 810 may have, for example, one potential generation circuit 846a and the same number of pass transistor logic circuits 846b as the source driver circuit 822.

[0161] The amplifier circuit 847 has a function of amplifying the image signal output from the pass transistor logic circuit 846b and outputting it to the wiring 832 having a function as a data line. By providing the amplifier circuit 8 47, the image signal can be stably supplied to the pixel 834. As the amplifier circuit 8 47, a voltage follower circuit having an operational amplifier or the like can be applied. When a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible.

[0162] Note that the circuit 840 can be provided with various circuits in addition to the reception circuit 841, the serial - parallel conversion circuit 842, and the potential generation circuit 846a. For example, the circuit 840 can be provided with a control circuit having a function of generating a start pulse signal, a clock signal, and the like.

[0163] <Configuration example of DA conversion circuit 846> FIG. 16 is a circuit diagram showing a configuration example of the potential generation circuit 846a and the pass transistor logic circuit 846b that constitute the DA conversion circuit 846. The DA conversion circuit having the configuration shown in FIG. 16 ​846 is 8-bit image data D <1> or image data D <8> analog image signal It can be converted to IS format.

[0164] In this specification, for example, the first bit of image data D is referred to as image data D <1> It says Show the second bit of the image data D. <2> It is written and shown as follows, the 8th bit image Image data D <8> This is indicated by writing it down.

[0165] The potential generation circuit 846a, configured as shown in Figure 16, includes resistive elements 848[1] to resistive elements 848

[0256] It has and these are connected in series. In other words, the DA conversion circuit 846 has a resistance This can be used as an anti-string type DA conversion circuit.

[0166] A potential VDD can be supplied to one terminal of the resistive element 848[1]. A potential VSS can be supplied to one terminal of 848

[0256] . This allows, From each terminal of the resistive element 848[1] to the resistive element 848

[0256] , different potentials V1 to V 256 It can output the following. Note that in Figure 16, the potential V1 is the same as the potential VDD. The configuration example of the potential generation circuit 846a in the case of the potential V is shown, 256 The potential VSS and Alternatively, the configuration may be such that the resistive element 848

[0256] is omitted and the potential V1 is set to potential VD D, potential V 256 This can also be defined as the potential VSS.

[0167] In this specification, the potential VDD can be, for example, a high potential, and the potential VSS can be, for example The potential can be low. Here, the low potential can be, for example, the ground potential. Furthermore, a high potential is a higher potential than a low potential, and if the low potential is the ground potential, it is considered a positive potential. It is possible.

[0168] The pass transistor logic circuit 846b shown in Figure 16 has 8 stages of pass transistors. It consists of 849. Specifically, the pass transistor logic circuit 846b is a single stage. Therefore, it is configured to branch into two electrical paths, resulting in a total of 256 paths. In other words, the pass transistor 849 is electrically connected in a tournament configuration. It is possible to do this. The source or drain of the 8th stage pass transistor 849, which is the final stage. On the other side, an analog image signal IS can be output.

[0169] For example, image data D <1> This can be supplied to the first-stage pass transistor 849. Image data D <2> This can be supplied to the second stage pass transistor 849, and image data TaD <8> This can be supplied to the 8th stage pass transistor 849. Thus, the picture The potential of the image signal IS is set according to the image data D, from potential V1 to potential V 256 One of the following Therefore, it is possible to convert digital image data into an analog image signal IS. It is possible.

[0170] Furthermore, the pass transistor logic circuit 846b shown in Figure 16 has an n-channel type pass transistor Both a transistor 849 and a p-channel type pass transistor 849 are provided. However, it is also possible to configure the system to provide only an n-channel type pass transistor 849. For example, image data D <1> or image data D <8> In addition, these complementary data are also used in pastoral studies. By supplying power to the gate of transistor 849, the bypass transistor logic circuit 846b The pass transistors 849 provided therein are all n-channel type transistors. can.

[0171] The configuration shown in Figure 16 has the function of performing DA conversion on image data D with a bit depth other than 8 bits. This can also be applied to the DA conversion circuit 846. For example, a resistor in the potential generation circuit 846a. 1024 or 1023 elements 848 are provided, and the pass transistor logic circuit 846b By providing 10 stages of pass transistors 849, the DA conversion circuit 846 can handle 10 bits. It can have the function of converting image data D to DA.

[0172] <Example configuration of gate driver circuit 821> Figure 17 is a block diagram showing an example configuration of the gate driver circuit 821. Circuit 821 is a shift register circuit composed of multiple set-reset flip-flops. It has a path SR. The shift register circuit SR has wiring 831 which functions as a scan line and It is electrically connected and has the function of outputting a signal to wiring 831.

[0173] The signal RES is a reset signal, and by setting the signal RES to a high potential, for example, the shift resistance The output of the SR circuit can all be set to a low potential. Signal SP is the start pulse signal. By inputting this signal to the gate driver circuit 821, the shift register circuit S The shift operation by R can be initiated. The signal PWC is a pulse width control signal, The throttle register circuit SR has the function of controlling the pulse width of the signal output to wiring 831. Signals CLK[1], CLK[2], CLK[3], and CLK[4] are crossed. It is a shift signal, and one shift register circuit SR has signal CLK[1] to signal CLK [4] For example, two signals can be input.

[0174] Note that the configuration shown in Figure 17 involves the shift register circuit SR and the electrically connected wiring 831. By using other wiring, etc., the shift register circuit 8 of the source driver circuit 822 It can also be applied to 44, etc.

[0175] Figure 18(A) shows the signal input to the shift register circuit SR and the shift register circuit S This figure shows the signal output from R. Here, in Figure 18(A), the clock signal is This shows the case where signals CLK[1] and CLK[3] are input.

[0176] Signal FO is an output signal, for example, the signal output to wiring 831. Signal SROUT This is a shift signal, and the signal LIN is input to the next stage shift register circuit SR. This is possible. Of the signals shown in Figure 18(A), the signals RES, PWC, and CLK are available. [1], signal CLK[3], and signal LIN are signals input to the shift register circuit SR. The signals FO and SROUT are signals output from the shift register circuit SR. be.

[0177] Figure 18(B) shows a shift register circuit SR whose input and output signals are the signals shown in Figure 18(A). This is a circuit diagram showing an example configuration. The shift register circuit SR consists of transistors 851 through It has a zista 863 and capacitive elements 864 to 866.

[0178] Either the source or drain of transistor 851 is connected to the source or drain of transistor 852. One side of the rain, one side of the source or drain of transistor 856, and transistor 85 It is electrically connected to either the source or drain of transistor 9. The gate of transistor 852. This refers to either the source or drain of transistor 853, or the source or of transistor 854. One side of the drain, either the source or the drain of transistor 855, transistor 858 The gate of the transistor 861 and one electrode of the capacitive element 864 are electrically connected. It is connected. The source or drain of transistor 856 is connected to transistor 857. The gate of the transistor is electrically connected to one electrode of the capacitance element 865. The other end of the source or drain of 59 is the gate of transistor 860, and the other end is the capacitive element 866 It is electrically connected to one of the electrodes of transistor 860, either the source or the drain. The other side is either the source or drain of transistor 861, and the gate of transistor 862. It is also electrically connected to the other electrode of the capacitive element 866.

[0179] The signal LIN is input to the gates of transistors 851 and 855. The signal CLK[3] is input to the gate of transistor 853. The signal RES is input to the gate of transistor 854. The source or drain of transistor 857 The signal CLK[1] is input to one side of the input. The source or drain of transistor 860 The other input receives the signal PWC.

[0180] Either the source or drain of transistor 862, and the source or drain of transistor 863 One end of the drain is electrically connected to wiring 831, and as mentioned above, from wiring 831 The signal FO is output. The other side of the source or drain of transistor 857, Signal S is emitted from one of the source or drain electrodes of the 858 and the other electrode of the capacitive element 865. ROUT is output.

[0181] The other side of the source or drain of transistor 851, and the source or drain of transistor 853 On the other side of the input, the source or drain of transistor 854, the other side of the drain of transistor 856 The gate of transistor 859, and the source or drain of transistor 862, among others. The potential VDD is supplied to one side. The other side of the source or drain of transistor 852 The other side of the source or drain of transistor 855, the source or drain of transistor 858 On the other hand, the source or drain of transistor 861, the other hand, the source of transistor 863 The potential VSS is supplied to the other electrode of the drain or the other electrode of the capacitive element 864. .

[0182] Transistor 863 is a bias transistor and functions as a constant current source. The gate of transistor 863 is supplied with a bias potential, which is a potential Vbias. can.

[0183] The source follower circuit 867 is formed by transistors 862 and 863. It is done. By providing a source follower circuit 867 in the shift register circuit SR, the shift Even if signal attenuation occurs within the SR resistor circuit due to wiring resistance, parasitic capacitance, etc. This makes it possible to suppress the decrease in signal potential FO caused by this. The operation of 810 can be sped up. Note that the source follower circuit 867 is a buffer. It may be a circuit other than a source follower circuit as long as it has the necessary function.

[0184] <Example configuration of area 823> Figure 19 shows the region where the gate driver circuit 821 and the source driver circuit 822 overlap. This figure shows an example of the configuration of region 823. As shown in Figure 19, region 823 contains a gate dry A region having elements that constitute the circuit 821, and elements that constitute the source driver circuit 822 A region having and are arranged with a certain regularity. In Figure 19, the gate driver circuit Transistor 871 is shown as an element constituting 821, and source driver circuit 822 is shown. The component shown is a transistor 872.

[0185] In Figure 19, the regions containing the elements that make up the gate driver circuit 821 are in the first and third rows. Regions containing elements that constitute the source driver circuit 822 are provided in the second and fourth rows. This shows the case where it can be done. In region 823, the gate driver circuit 821 is configured. Dummy elements are placed between each region containing the element. Also, source driver circuit 82 A dummy element is provided between each region containing the elements that make up 2. Figure 19 shows a tra Dummy transistors were placed on all four sides of transistor 871 and on all four sides of transistor 872 as dummy elements. This shows an example configuration of region 823 when an inverter 873 is provided.

[0186] By providing a dummy element such as a dummy transistor 873 in region 823, the dummy The element absorbs impurities, and these impurities diffuse to transistors 871 and 872, etc. This can suppress the occurrence of transistor 871 and transistor 87 Since the reliability of the second-order device can be improved, the reliability of the display device 810 can be increased. Note that in Figure 19, transistors 871 and 872, as well as dummy transistors, are shown. Although ZISTA 873 is arranged in a matrix, even if it is not arranged in a matrix good.

[0187] Figure 20 is a top view showing an example configuration of region 870, which is part of region 823. As shown in 20, region 870 contains one transistor 871 and one transistor 872. One dummy transistor 873 is provided. As shown in Figure 20, The sta871 consists of a channel formation region 110, a source region 111, and a drain region 112. , has a region that overlaps with the channel formation region 110, It has 13.

[0188] Note that in Figure 20, components such as the gate insulator are omitted. Also, in Figure 20, the channel The drain formation region, source region, and drain region are not clearly separated in the description.

[0189] An opening 114 is provided in the source region 111, and the source region 111 is accessible through the opening 114. It is electrically connected to the wiring 115. An opening 116 is provided in the drain area 112. The drain area 112 is electrically connected to the wiring 117 through the opening 116.

[0190] The gate electrode 113 is provided with an opening 118, and the gate electrode 113 is provided through the opening 118. It is electrically connected to wiring 121. An opening 119 is provided in wiring 115, opening Wiring 115 is electrically connected to wiring 122 via part 119. Wiring 117 has an opening An opening 120 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. In other words, source region 111 is electrically connected to wiring 122 via wiring 115. The drain region 112 is electrically connected to the wiring 123 via the wiring 117.

[0191] Transistor 872 has a channel formation region 130, a source region 131, and a drain region It has 132 and, and also has a region that overlaps with the channel-forming region 130. It has an electrode 133.

[0192] An opening 134 is provided in the source region 131, and the source region 131 is accessible through the opening 134. It is electrically connected to the wiring 135. An opening 136 is provided in the drain area 132. The drain area 132 is electrically connected to the wiring 137 through the opening 136.

[0193] The gate electrode 133 is provided with an opening 138, and the gate electrode 133 is provided through the opening 138. It is electrically connected to wiring 141. An opening 139 is provided in wiring 135, opening Wiring 135 is electrically connected to wiring 142 via part 139. Wiring 137 has an opening An opening 140 is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. In other words, source region 131 is electrically connected to wiring 142 via wiring 135. The drain region 132 is electrically connected to the wiring 143 via the wiring 137.

[0194] Furthermore, channel-forming region 110 and channel-forming region 130 are provided in the same layer. It is possible to do so. Also, the source region 111 and the drain region 112, and the source region 131 The drain region 132 and the gate electrode can be provided in the same layer. 113 and gate electrode 133 can be provided on the same layer. Also, wiring 1 Wiring 15 and wiring 117, and wiring 135 and wiring 137 are provided on the same layer. Yes, it is possible. In other words, transistor 871 and transistor 872 are placed on the same layer. This allows transistor 871 and transistor 872 to interact with each other. Compared to the case where the display is placed on different layers, the manufacturing process of the display device 810 can be simplified, and the display The device 810 can be made inexpensive.

[0195] Wiring electrically connected to transistor 871, which constitutes the gate driver circuit 821. Wires 121 through 123 are located on the same layer. Also, the source driver circuit... Wirings 141 to 14 that are electrically connected to transistor 872, which constitutes 822 3 are located on the same layer. Furthermore, wiring 121 to wiring 123 are connected to wiring 1 It is located on a different layer from wiring 41 to 143. Thus, the gate driver circuit 82 The transistor 871 is an element that makes up 1, and the element that makes up the source driver circuit 822 This prevents the child transistor 872 from being electrically short-circuited. Therefore, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated and overlap. Even if the region is present, the gate driver circuit 821 and source driver circuit 822 may malfunction. This can be suppressed, thereby improving the reliability of the display device 810.

[0196] In this specification, "the same layer as A" means, for example, the same layer formed in the same process as A. This refers to a layer containing a single material.

[0197] In Figure 20, wiring 141 to 143 is provided above wiring 121 to 123. The configuration is shown, but below wiring 121 to wiring 123 there are wirings 141 to wiring 143 It is acceptable to provide this.

[0198] Furthermore, in Figure 20, wiring 121 to wiring 123 extends horizontally, and wiring 141 to wiring 1 Although 43 is shown as being in a vertically extending configuration, one aspect of the present invention is not limited to this. For example If wiring 121 to wiring 123 is extended vertically, and wiring 141 to wiring 143 is extended horizontally. The configuration may extend in that direction. Alternatively, wiring 121 to wiring 123, and wiring 141 to Both of the wires 143 may extend horizontally or vertically.

[0199] The dummy transistor 873 has a semiconductor 151 and a conductor 152. Region 2 has an overlapping region with semiconductor 151. Semiconductor 151 is composed of transistor 871 and transistor 871. It can be formed in the same layer as the channel formation region of the conductor 872. Also, conductor 1 52 is formed in the same layer as the gate electrodes of transistors 871 and 872. This is possible. Note that the dummy transistor 873 is one of the semiconductor 151 or the conductor 152. It is also acceptable to have a configuration that does not have a method.

[0200] The semiconductor 151 and the conductor 152 are configured not to be electrically connected to other wiring, etc. Yes, it is possible. A constant potential may be supplied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0201] <Example configuration of 834 pixels> Figures 21(A) to (E) show the colors exhibited by pixels 834 provided in the display device 810. This is an explanatory diagram. As shown in Figure 21(A), the device has the function of emitting red light (R). Element 834, a pixel 834 having the function of emitting green light (G), and a component that emits blue light (B) A pixel 834 having the function of displaying information can be provided in the display device 810. Alternatively, Figure 21(B) As shown, pixel 834 has the function of emitting cyan (C) light, and magenta (M) Pixel 834 having the function of emitting light, and pixels having the function of emitting yellow (Y) light. 834 may be provided on the display device 810.

[0202] Alternatively, as shown in Figure 21(C), a pixel 834 has the function of emitting red light (R), and a green light. Pixel 834 having the function of emitting colored light (G), and pixel having the function of emitting blue light (B) A pixel 834 having the function of emitting white light (W) is provided in the display device 810. It may also be equipped with a function to emit red light (R), as shown in Figure 21(D). Pixel 834, which emits green light (G), and Pixel 834 which emits blue light (B) A pixel 834 having the function of emitting yellow (Y) light, It may be provided in the display device 810. Alternatively, as shown in Figure 21(E), cyan (C Pixel 834 having the function of emitting light of () and having the function of emitting magenta (M) light Pixel 834, Pixel 834 having the function of emitting yellow (Y) light, and Pixel 834 having the function of emitting white light (W) A pixel 834 having the function of outputting information may be provided in the display device 810.

[0203] As shown in Figures 21(C) and (E), a pixel 834 having the function of emitting white light (W) is By providing it in the display device 810, the brightness of the displayed image can be increased. Also, Figure As shown in 21(D), the number of colors exhibited by pixel 834 can be increased to reproduce intermediate colors. Because it can improve quality, it can also improve the quality of the display.

[0204] Furthermore, as shown in Figure 21(F), the display device 810 has a function to emit red light (R). A pixel 834 that emits green light (G), and a pixel 834 that emits blue light (B) In addition to the pixel 834 which has the function of emitting light, there is also a pixel 83 which has the function of emitting infrared light (IR). It may have 4. Alternatively, as shown in Figure 21(G), the display device 810 may have cyan (C) 834 pixels that emit light, and 834 pixels that emit magenta (M) light. In addition to pixel 834, which has the function of emitting yellow (Y) light, it also emits infrared (IR) light. It may also have a pixel 834 that has the function of outputting. Furthermore, the display device 810 is shown in Figure 21(F). In addition to the pixels 834 shown in (G), the system also has pixels 834 that have the function of emitting white light (W). That's fine.

[0205] Figures 22(A) and (B) are circuit diagrams showing an example configuration of pixel 834. Figure 22(A) shows The pixel 834 in the configuration consists of transistor 552, transistor 554, and capacitive element 562. The device has a light-emitting element 572. The light-emitting element 572 is, for example, an electroluminescent element. EL elements that utilize luminescence can be applied. EL elements utilize luminescence between a pair of electrodes. It has a layer containing the compound (hereinafter also called the EL layer). Between the pair of electrodes, the EL element When a potential difference greater than the key voltage is generated, holes are injected into the EL layer from the anode side, and negatively impacts the EL layer. Electrons are injected from the pole side. The injected electrons and holes recombine in the EL layer. The luminescent substances contained within emit light.

[0206] Furthermore, EL elements are distinguished by whether the light-emitting material is an organic compound or an inorganic compound. Generally speaking, the former are called organic EL elements, and the latter are called inorganic EL elements.

[0207] Organic EL elements, when a voltage is applied, release electrons from one electrode and holes from the other electrode. These are each injected into the EL layer. Then, these carriers (electrons and holes) recombine. As a result, the luminescent organic compound forms an excited state, and when that excited state returns to the ground state... It emits light. Because of this mechanism, such a light-emitting element is a current-excited type light-emitting element. It is called [name].

[0208] In addition to luminescent compounds, the EL layer also contains materials with high hole injection potential and materials with high hole transport potential. , hole-blocking materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar properties It may contain substances (substances with high electron transport and hole transport properties), etc.

[0209] The EL layer is produced by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed by the following method.

[0210] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized type of luminescence used.

[0211] The light-emitting element only needs to have at least one of its pair of electrodes transparent in order to extract light. Then, a transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. Top emission structure that emits light from the top surface, bottom emission structure that extracts light from the substrate side. Bottom emission structure, and dual emission structure that extracts light from both sides. There are light-emitting elements with an (n) structure, and any light-emitting element with an injection structure can be applied.

[0212] Furthermore, the same type of element used for light-emitting elements other than light-emitting element 572 is also used for light-emitting elements other than light-emitting element 572. It is possible.

[0213] Either the source or drain of transistor 552 is electrically connected to wiring 832. The source or drain of transistor 552 is connected to one electrode of capacitive element 562. and is electrically connected to the gate of transistor 554. The other electrical The pole is electrically connected to wiring 835a. The gate of transistor 552 is connected to wiring 8 It is electrically connected to 31. Either the source or the drain of transistor 554 is connected It is electrically connected to wire 835a. The other side of the source or drain of transistor 554. It is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 The pole is electrically connected to wiring 835b. The potential VSS is supplied to wiring 835a. The potential VDD is supplied to wiring 835b. Wirings 835a and 835b are power lines. It functions as such.

[0214] In the pixel 834 with the configuration shown in Figure 22(A), the power supplied to the gate of transistor 554 The current flowing through the light-emitting element 572 is controlled according to the position, thereby from the light-emitting element 572 The luminescence is controlled.

[0215] Figure 22(B) shows a different configuration of pixel 834 from the configuration shown in Figure 22(A). In the pixel 834 with the configuration shown, either the source or the drain of transistor 552 is Electrically connected to wiring 832. The other of the source or drain of transistor 552. It is electrically connected to one electrode of the capacitive element 562 and the gate of the transistor 554. The gate of transistor 552 is electrically connected to wiring 831. Either the source or drain of the ZISTA 554 is electrically connected to wiring 835a. The source or drain of transistor 554 is connected to the other electrode of capacitive element 562, and It is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 is It is electrically connected to wiring 835b. Wiring 835a is supplied with potential VDD, The potential VSS is supplied to line 835b.

[0216] Figure 23(A) shows an example of the configuration of pixel 834, and the point where it has memory is the same as in Figures 22(A) and 2 This differs from the pixel 834 in the configuration shown in 2(B). The pixel 834 in the configuration shown in Figure 23(A) is Transistor 511, transistor 513, transistor 521, capacitive element 515, capacitive element It has a sub-element 517 and a light-emitting element 572. Furthermore, the pixel 834 has a function as a scan line. Wiring 831_1 and wiring 831_2 are electrically connected as wiring 831, and data line Wiring 832_1 and wiring 832_2 are electrically connected as wiring 832 which has the function of It continues.

[0217] Either the source or drain of transistor 511 is electrically connected to wiring 832_1. The source or drain of transistor 511 is connected to one of the capacitive elements 515. The poles are electrically connected. The gate of transistor 511 is electrically connected to wiring 831_1. It is connected to the source or drain of transistor 513. It is electrically connected to the source or drain of transistor 513. It is electrically connected to the other electrode of child 515. The gate of transistor 513 is wired It is electrically connected to 831_2. The other electrode of capacitive element 515 is connected to capacitive element 517 It is electrically connected to one electrode of the transistor. One electrode of the capacitive element 517 is connected to the transistor. It is electrically connected to the gate of transistor 521. The source or drain of transistor 521 One end is electrically connected to one electrode of the light-emitting element 572. The other end is connected to one electrode of the capacitive element 517. The electrodes are electrically connected to wiring 535. Source or drain of transistor 521 The other end of the input is electrically connected to wiring 537. The other electrode of the light-emitting element 572 is It is electrically connected to wiring 539.

[0218] In this specification, the voltage supplied to a light-emitting element refers to the voltage applied to one electrode of the light-emitting element. This shows the difference between the potential applied to the light-emitting element and the potential applied to the other electrode of the light-emitting element.

[0219] The source or drain of transistor 511 and one electrode of capacitive element 515 are Let node N1 be an electrically connected node. Transistor 513 source or slave The other side of the element, one electrode of the capacitive element 517, and the gate of the transistor 521 are electrically connected. The node connected to it is designated as node N2. Also, in Figure 23(A), the capacitive element 517 Circuit 401 consists of a transistor 521 and a light-emitting element 572. .

[0220] The wiring 535 provides a common wiring for, for example, all pixels 834 on the display device 810. It can be made into a line. In this case, the potential supplied to wiring 535 becomes a common potential. A constant potential can be supplied to wiring 537 and wiring 539. For example, wiring 537 High potential can be supplied to wiring 539, and low potential can be supplied to wiring 539. Wiring 537 and 539 function as power lines.

[0221] Transistor 521 has the function of controlling the current supplied to the light-emitting element 572. Sub-element 517 functions as a retaining capacitance. Capacitive element 517 may be omitted.

[0222] Note that in Figure 23(A), the anode side of the light-emitting element 572 is electrically connected to the transistor 521. The following configuration is shown, but it is also possible to electrically connect transistor 521 to the cathode side. In this case, the potential values ​​of wiring 537 and wiring 539 can be changed as appropriate. Cut.

[0223] Pixel 834 maintains the potential of node N1 by turning off transistor 511. This can be done. Also, by turning off transistor 513, the potential of node N2 can be changed. It can hold. Furthermore, by turning transistor 513 to the off state, By writing a predetermined potential to node N1 via 511, the capacitance via the capacitive element 515 is generated. The coupling allows the potential of node N2 to be changed in accordance with the potential displacement of node N1. ru.

[0224] Here, transistors 511 and 513 have a channel formation region with metal oxide A transistor with physical components (hereinafter also referred to as an OS transistor) can be applied. Metal oxides can have a band gap of 2 eV or more, or 2.5 eV or more. Therefore, the OS transistor exhibits extremely low leakage current (off-current) in the non-conductive state. Therefore, OS transistors are suitable for transistors 511 and 513. By using this, the potentials of nodes N1 and N2 can be maintained over a long period of time. Cut.

[0225] As a metal oxide, In-M-Zn oxide (where M is aluminum, gallium, and yt) Rium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium Zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum Metal oxides such as one or more selected from tungsten, magnesium, etc. It is recommended to use them. In particular, element M can be aluminum, gallium, yttrium, or tin. It would be good to do so. Also, as metal oxides, indium oxide, zinc oxide, In-Ga oxide, I n-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0226] [An example of how pixel 834 operates] Next, using Figure 23(B), we will show an example of how pixel 834 with the configuration shown in Figure 23(A) operates. will be described. FIG. 23(B) is a timing chart related to the operation of the pixel 834 having the configuration shown in FIG. 23(A). Here, for the sake of easy explanation, various resistances such as wiring resistance, parasitic capacitances of transistors, wirings, etc., and the effects such as the threshold voltage of the transistor are not considered.

[0227] In the operation shown in FIG. 23(B), one frame period is divided into a period T1 and a period T2. The period T1 is a period for writing a potential to the node N2, and the period T2 is a period for writing a potential to the node N1.

[0228] In the period T1, potentials for turning on the transistors are supplied to both the wiring 831_1 and the wiring 831_2. Also, a potential V, which is a fixed potential, is supplied to the wiring 832_1, and a potential V is supplied to the wiring 832_2. ref w

[0229] To the node N1, a potential V is supplied from the wiring 832_1 via the transistor 511. Also, to the node N2, a potential V is supplied from the wiring 832_2 via the transistor 513. Therefore, a potential difference V - V is held in the capacitive element 515. ref w w ref

[0230] Subsequently, in the period T2, a potential for turning on the transistor 511 is supplied to the wiring 831_1, and a potential for turning off the transistor 513 is supplied to the wiring 831_2. Also, a potential V is supplied to the wiring 832_1, and a predetermined fixed potential is supplied to the wiring 832_2. Note that the potential of the wiring 832_2 may be floating. data ​​​​​​​​​​​​​​​​​​​

[0231] Node N1 receives potential V through transistor 511. data It is supplied. At this time, Capacitive coupling by the capacitive element 515 results in a potential V data The potential of node N2 is accordingly The voltage changes by dV. That is, the potential in circuit 401 is V w The input is the potential obtained by adding the potential dV to the input. This will be done. Note that in Figure 23(B), dV is shown as a positive value, but negative It can also be a value, that is, potential V. data The potential is V ref It can be lower.

[0232] Here, the potential dV is roughly determined by the capacitance value of the capacitive element 515 and the capacitance value of the circuit 401. If the capacitance value of the capacitive element 515 is sufficiently larger than the capacitance value of the circuit 401, the potential d V is the potential difference V data -V ref The potential will be close to that.

[0233] Thus, pixel 834 combines two types of data signals and supplies them to node N2. Because it is possible to generate positions, the image displayed in the pixel array 833 can be generated inside the pixel 834 This can be corrected. Here, one of the two types of data signals is the image signal mentioned above. This is possible, and the other of the two types of data signals can be, for example, a correction signal. During period T1, the potential V corresponding to the correction signal w After supplying to node N2, the image signal was sent during period T2. Potential V corresponding to the number data By supplying this to node N1, the pixel array 833 is displayed The image shown can be an image signal corrected with a correction signal. In addition to the image signal, correction signals and other signals are also transmitted by the source driver circuit 822 of the display device 810. It can be generated.

[0234] Furthermore, pixel 834 in the configuration shown in Figure 23(A) controls the potential of node N2, and wiring 832_1 and The potential can be set to exceed the maximum potential that can be supplied to wiring 832_2. This allows, A high voltage can be supplied to the light-emitting element 572. Specifically, for example, the potential of the wiring 537. This can be made higher. Therefore, when the light-emitting element 572 is an organic EL element, the light-emitting element The child can be arranged in a tandem structure as described later. This improves the current efficiency of the light-emitting element 572. Furthermore, the external quantum efficiency can be increased. Therefore, a high-brightness image can be displayed on the display device 810. This is possible. Furthermore, the power consumption of the display device 810 can be reduced.

[0235] Note that the circuit is not limited to the example shown in Figure 23(A), and additional transistors, capacitive elements, etc., can be added. A configuration like this is also possible. For example, in the configuration shown in Figure 23(A), a transistor and a capacitive element may be added. By adding them one by one, we can have three nodes that can maintain the potential. In other words, there are nodes other than nodes N1 and N2 that can maintain the potential. It can be configured to have one installed at pixel 834. This allows the potential of node N2 to be adjusted. It can be made even higher. Therefore, a larger current can be passed through the light-emitting element 572. It is possible.

[0236] Figures 24(A) through (E) show examples of circuit configurations 401 that differ from those in Figure 23(A). The circuit 401 with the configuration shown in Figure 24(A) is the same as the circuit 401 with the configuration shown in Figure 23(A). It includes a capacitive element 517, a transistor 521, and a light-emitting element 572.

[0237] In the circuit 401 with the configuration shown in Figure 24(A), node N2 has transistor 521. The gate and one electrode of the capacitive element 517 are electrically connected. Transistor 52 Either the source or drain of transistor 1 is electrically connected to wiring 537. The source or drain of 521 is electrically connected to the other electrode of the capacitive element 517. The other electrode of the capacitive element 517 is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 is electrically connected to the wiring 539.

[0238] Circuit 401 with the configuration shown in Figure 24(B) is similar to circuit 401 with the configuration shown in Figure 23(A) It includes a capacitive element 517, a transistor 521, and a light-emitting element 572.

[0239] In the circuit 401 with the configuration shown in Figure 24(B), node N2 has transistor 521. The gate and one electrode of the capacitive element 517 are electrically connected. One electrode is electrically connected to the wiring 537. The other electrode of the light-emitting element 572 is It is electrically connected to either the source or drain of transistor 521. The source or drain of the 521 is electrically connected to the other electrode of the capacitive element 517. The other electrode of the capacitive element 517 is electrically connected to the wiring 539.

[0240] Figure 24(C) shows the case where transistor 525 is added to circuit 401 shown in Figure 24(A). This shows an example configuration of circuit 401. Either the source or the drain of transistor 525. This refers to the other electrode of the source or drain of transistor 521, and the other electrode of capacitive element 517. It is electrically connected to the source or drain of transistor 525. It is electrically connected to one electrode of child 572. The gate of transistor 525 is wired It is electrically connected to 541. Wiring 541 controls the conduction of transistor 525. It functions as a scan line.

[0241] In pixel 834 having the circuit 401 configured as shown in Figure 24(C), the potential of node N2 is traced Even if the threshold voltage of transistor 521 is exceeded, transistor 525 will not be turned on. Therefore, no current flows to the light-emitting element 572. This suppresses malfunctions of the display device 810. It is possible.

[0242] Figure 24(D) shows the case when transistor 527 is added to circuit 401 shown in Figure 24(C). This shows an example of the configuration of circuit 401. Either the source or the drain of transistor 527 It is electrically connected to the other side of the source or drain of transistor 521. The source or drain of the zista 527 is electrically connected to the wiring 543. The gate of the transistor 527 is electrically connected to wiring 545. Wiring 545 is It functions as a scan line that controls the conductivity of the transistor 527.

[0243] Wiring 543 can be electrically connected to a source of a specific potential, such as a reference potential. Wiring 543 functions as a power line. From wiring 543 to transistor 521 By supplying a specific potential to the source or the other drain, the image signal is written to pixel 834. This can stabilize the feeding process.

[0244] Furthermore, wiring 543 can be electrically connected to circuit 520. Circuit 520 is the above special A constant potential supply source, a function to acquire the electrical characteristics of transistor 521, and a function to generate a correction signal. It may have one or more functions.

[0245] The circuit 401 with the configuration shown in Figure 24(E) includes a capacitive element 517, a transistor 521, and It has a transistor 529 and a light-emitting element 572.

[0246] In the circuit 401 with the configuration shown in Figure 24(E), node N2 has transistor 521. The gate and one electrode of the capacitive element 517 are electrically connected. Transistor 52 Either the source or drain of transistor 1 is electrically connected to wiring 537. Either the source or the drain of 529 is electrically connected to the wiring 543.

[0247] The other electrode of the capacitive element 517 is electrically connected to the other side of the source or drain of the transistor 521. They are connected. The source or drain of transistor 521 is connected to the other side of the transistor. The source or drain of transistor 529 is electrically connected to the other. The other end of the drain or the other end is electrically connected to one electrode of the light-emitting element 572.

[0248] The gate of transistor 529 is electrically connected to wiring 831_1. Light-emitting element 5 The other electrode of 72 is electrically connected to the wiring 539.

[0249] <Example of display device configuration 2> Figure 25 shows an example configuration of the display device 810 when pixel 834 has the configuration shown in Figure 23(A). This is a block diagram. The display device 810 with the configuration shown in Figure 25 is the display device shown in Figure 8. In addition to the components of 810, a demultiplexer circuit 824 is provided. Circuit 824 can be provided, for example, on layer 820, as shown in Figure 25. The number of lutiplexer circuits 824 is, for example, the number of rows of pixels 834 provided in the pixel array 833. It can be the same number as the number itself.

[0250] The gate driver circuit 821 is electrically connected to the pixel 834 via wiring 831-1. The gate driver circuit 821 is electrically connected to the pixel 834 via wiring 831-2. Wiring 831-1 and wiring 831-2 function as scan lines.

[0251] The source driver circuit 822 is electrically connected to the input terminal of the demultiplexer circuit 824. The first output terminal of the demultiplexer circuit 824 is connected via wiring 832-1. It is electrically connected to element 834. The second output terminal of the demultiplexer circuit 824 is It is electrically connected to pixel 834 via wiring 832-2. Wiring 832-1 and wiring Line 832-2 functions as a data line.

[0252] Note that the source driver circuit 822 and the demultiplexer circuit 824 are collectively referred to as the source. It could also be called a driver circuit. In other words, the demultiplexer circuit 824 is a source driver. It may also be included in circuit 822.

[0253] In the display device 810 with the configuration shown in Figure 25, the source driver circuit 822 receives the image signal S It has the function of generating 1 and image signal S2. The demultiplexer circuit 824 is wired 83 It has the function of supplying the image signal S1 to the pixel 834 via 2-1, and via wiring 832-2 It has the function of supplying the image signal S2 to the pixel 834. Here, the configuration shown in Figure 25 If the device 810 is operated in the manner shown in Figure 23(B), the potential V data to image signal The potential can be set to correspond to S1, and the potential V w This is the potential corresponding to the image signal S2. It is possible.

[0254] As shown in Figure 23(B), potential V is present at node N2. w After supplying the potential V to node N1, d ata By supplying this, the potential of node N2 becomes “V w This becomes +dV. Here, as mentioned above... As shown, potential dV is equivalent to potential V data This is the potential corresponding to the image signal S2. An image signal S1 can be added. In other words, the image signal S1 can be superimposed on the image signal S2. It is possible.

[0255] Potential V corresponding to image signal S1 data , and the potential V corresponding to the image signal S2 w Size This is limited according to the voltage rating of the source driver circuit 822. Therefore, the image signal S1 and the image By superimposing the image signals S2, the potential that the source driver circuit 822 can output is greater than Images corresponding to high-potential image signals can be displayed on the pixel array 833. This allows a large current to be passed through the light-emitting element 572, thus enabling high-brightness images to be displayed on the pixel array 8. It can be displayed in 33. Also, the brightness of the image that the pixel array 833 can display. It is possible to expand the dynamic range, which is the range of degrees.

[0256] The image corresponding to image signal S1 and the image corresponding to image signal S2 may be the same or different. It may be so. The image corresponding to image signal S1 and the image corresponding to image signal S2 are If they are the same, the pixel array 833 contains the brightness of the image corresponding to the image signal S1, and the image It is possible to display an image with a brightness higher than the brightness of the image corresponding to signal S2.

[0257] Figure 26 shows that the image P1 corresponding to the image signal S1 is an image containing only characters, and the image signal S2 This shows the case where the corresponding image P2 is an image that contains both pictures and text. In this case, the picture By superimposing image P1 and image P2, the brightness of the characters can be increased, for example, the characters This can be emphasized. Also, as shown in Figure 23(B), there is a potential V at node N2. w ga write After it is inserted, the potential of node N2 is potential V data Because it changes in accordance with the image signal Potential V corresponding to S2 w If you rewrite the image signal S1, the potential V data Write again It must be filled. On the other hand, potential V data If you wish to rewrite it, see Figure 23(B). The charge written to node N2 at time T1 leaks from transistor 513, etc. As long as it is held without being held, the potential V w There is no need to rewrite it. Therefore, in the case shown in Figure 26 In this case, the potential V data By adjusting this value, you can adjust the brightness of the characters. ru.

[0258] Here, as mentioned above, the potential V corresponding to the image signal S2. w If you want to rewrite the image signal, The potential V corresponding to S1 data It must be written again. Meanwhile, potential V data If you want to rewrite the potential V wThere is no need to rewrite it. Therefore, image P2 is the same as image P1. It is preferable to use an image that is rewritten less frequently. Note that image P1 contains only text. Image P2 is not limited to images; it is not limited to images that contain both pictures and text.

[0259] <Example of cross-sectional configuration of a display device> Figure 27 is a cross-sectional view showing an example configuration of the display device 810. The display device 810 is mounted on a substrate 701 and a substrate 705, and substrates 701 and 705 are bonded together by a sealing material 712. Yes, they are.

[0260] As the substrate 701, a single-crystal semiconductor substrate such as a single-crystal silicon substrate can be used. Note that a semiconductor substrate other than a single-crystal semiconductor substrate may be used as substrate 701.

[0261] Transistors 441 and 601 are provided on substrate 701. Transistor 441 can be a transistor provided in circuit 840. Transistor 6 01 is a transistor provided in the gate driver circuit 821, or a source driver circuit It can be a transistor provided at 822. That is, transistor 441 and The transistor 601 can be provided in layer 820 as shown in Figure 8, etc.

[0262] Transistor 441 has a conductor 443 that functions as a gate electrode and a gate insulator It consists of an insulator 445 that functions as a channel forming region and a part of the substrate 701, and A semiconductor region 447 including the region, having a low function as either the source region or the drain region. Resistive region 449a, and low resistance having the other function as either a source region or a drain region. It has region 449b. Transistor 441 is either p-channel or n-channel. But that's fine.

[0263] Transistor 441 is electrically isolated from other transistors by the element isolation layer 403. In Figure 27, transistors 441 and 601 are separated by the element isolation layer 403. This shows the case where the elements are electrically isolated. The element isolation layer 403 is LOCOS(LOCal Oxidation of Silicon (STI) method, or STI (Shallow Tre) method. It can be formed using methods such as the (nch Isolation) method.

[0264] Here, the transistor 441 shown in Figure 27 has a convex semiconductor region 447. The sides and top surface of the semiconductor region 447 are covered by the conductor 443 via the insulator 445. It is provided. Figure 27 shows how the conductor 443 covers the side surface of the semiconductor region 447. This is not shown in the diagram. Furthermore, the conductor 443 can be made of a material that adjusts the work function. ru.

[0265] Transistors with a convex semiconductor region, such as transistor 441, have a semiconductor substrate. Because it utilizes a protruding part, it can be called a fin-type transistor. Even if it has an insulator that is in contact with the top and functions as a mask for forming a protrusion, Good. Also, Figure 27 shows a configuration in which a part of the substrate 701 is processed to form a protrusion. Alternatively, a semiconductor having a convex shape may be formed by processing the SOI substrate.

[0266] Note that the configuration of transistor 441 shown in Figure 27 is just one example, and is not limited to this configuration. The appropriate configuration should be chosen depending on the path configuration or the operating method of the circuit. For example, 4 transistors 41 may also be a planar transistor.

[0267] Transistor 601 can have the same configuration as transistor 441.

[0268] On the substrate 701 are an element isolation layer 403, and transistors 441 and 60 In addition to 1, insulators 405, 407, 409, and 411 are provided. Conductor 451 in insulator 405, insulator 407, insulator 409, and insulator 411 It is buried. Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0269] Insulators 413 and 415 are provided on the conductor 451 and on the insulator 411. Furthermore, a conductor 457 is embedded in the insulator 413 and the insulator 415. Conductor 45 7 can be provided, for example, on the same layer as wiring 121 to 123 shown in Figure 20. Here, the height of the top surface of the conductor 457 and the height of the top surface of the insulator 415 can be made to be approximately the same.

[0270] Insulators 417 and 419 are provided on the conductor 457 and on the insulator 415. Furthermore, a conductor 459 is embedded in the insulator 417 and the insulator 419. Conductor 45 9 can be provided, for example, on the same layer as wiring 141 to 143 shown in Figure 20. Here, the height of the top surface of the conductor 459 and the height of the top surface of the insulator 419 can be made to be approximately the same.

[0271] Insulators 421 and 214 are provided on the conductor 459 and on the insulator 419. A conductor 453 is embedded in the edge 421 and in the insulator 214. Here, the conductor 4 The height of the top surface of 53 and the height of the top surface of the insulator 214 can be made to be approximately the same.

[0272] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductive body 455 is embedded. Here, the height of the top surface of the conductive body 455 and the top of the insulator 216 The surface height can be made to be approximately the same.

[0273] Insulators 222, 224, and 254 are placed on the conductor 455 and the insulator 216. Edge members 244, insulators 280, insulators 274, and insulators 281 are provided. Insulator 22 Insulator 2, insulator 224, insulator 254, insulator 244, insulator 280, insulator 27 A conductor 305 is embedded in 4 and in the insulator 281. Here, on the conductor 305 The height of the surface and the height of the top surface of the insulator 281 can be made to be approximately the same.

[0274] An insulator 361 is provided on the conductor 305 and on the insulator 281. The electric body 317 and the conductor 337 are embedded. Here, the height of the upper surface of the conductor 337 and The height of the top surface of the insulator 361 can be made to be approximately the same.

[0275] An insulator 363 is provided on the conductor 337 and on the insulator 361. The electric element 347, the conductor 353, the conductor 355, and the conductor 357 are embedded here. , the height of the upper surfaces of conductor 353, conductor 355, and conductor 357, and the upper surface of insulator 363 The height can be made to be about the same.

[0276] Connecting electrodes 76 are placed on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. A 0 is provided. Also, an anisotropic conductor 780 is electrically connected to the connecting electrode 760. A flexible printed circuit (FPC) is provided to electrically connect to the anisotropic conductor 780. A Printed Circuit (FPC) 716 is provided. The FPC 716 displays Various signals and other information are supplied to the display device 810 from outside the device 810.

[0277] As shown in Figure 27, the source region or drain region of transistor 441 The functional low-resistance region 449b consists of conductors 451, 457, 459, and a conductive material. Body 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, Conductor 353, conductor 355, conductor 357, connecting electrode 760, and anisotropic conductor 780 It is electrically connected to the FPC716 via this. Here, in Figure 27, the connecting electrode 760 Conductors that have the function of electrically connecting to conductor 347 include conductor 353 and conductor 3 The three shown are 55 and conductor 357, but the present invention is not limited to these. There may be one conductor that has the function of electrically connecting pole 760 and conductor 347, There may be two, or four or more. The connecting electrode 760 and the conductor 347 are electrically connected. By providing multiple conductive elements that have a connecting function, contact resistance can be reduced.

[0278] A transistor 750 is provided on the insulator 214. Transistor 750 is used for pixel 8 It can be a transistor located at 34. In other words, transistor 750 is shown in Figure It can be provided in layer 830 as shown in 8. Transistor 750 is an OS transistor It can be used. OS transistors have the characteristic of having extremely low off-current. Therefore, the retention time of image signals, etc., can be increased, thus reducing the frequency of refresh operations. This can be reduced. Therefore, the power consumption of the display device 810 can be reduced.

[0279] Insulator 254, insulator 244, insulator 280, insulator 274, and insulator 281 Conductors 301a and 301b are embedded inside. Conductor 301a is a transistor Electrically connected to either the source or drain of the ZISTA 750, conductor 301b is a tra It is electrically connected to the other side of the source or drain of the converter 750. Here, the conductor The height of the upper surface of 301a and the conductor 301b is approximately the same as the height of the upper surface of the insulator 281. Cut.

[0280] Insulator 361 contains conductor 311, conductor 313, conductor 331, capacitive element 790, conductor Conductors 333 and 335 are embedded. Conductors 311 and 313 are transient It is electrically connected to the STA750 and functions as wiring. Conductor 333 and Conductor 3 35 is electrically connected to the capacitive element 790. Here, conductor 331, conductor 33 3. The height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0281] Conductors 341, 343, and 351 are embedded in the insulator 363. In this way, the height of the top surface of the conductor 351 and the height of the top surface of the insulator 363 can be made to be approximately the same.

[0282] Insulator 405, Insulator 407, Insulator 409, Insulator 411, Insulator 413, Insulator 41 5, Insulator 417, Insulator 419, Insulator 421, Insulator 214, Insulator 280, Insulator 274, insulator 281, insulator 361, and insulator 363 have the function of interlayer films. It may also function as a planarizing film that covers the uneven shape below each of them. For example, The upper surface of the insulator 363 is chemically mechanically polished (CMP) to improve its flatness. Planarization is performed using methods such as mechanical polishing. It's okay if it's not allowed.

[0283] As shown in Figure 27, the capacitive element 790 has a lower electrode 321 and an upper electrode 325. Furthermore, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. In the capacitive element 790, an insulator 323 that functions as a dielectric is sandwiched between a pair of electrodes. It is a laminated structure. Figure 27 shows an example in which a capacitive element 790 is placed on an insulator 281. As shown, the capacitive element 790 may be provided on an insulator different from the insulator 281.

[0284] In Figure 27, conductors 301a, 301b, and 305 are formed in the same layer. This shows an example of this. Also, conductor 311, conductor 313, conductor 317, and lower electric This shows an example where pole 321 is formed in the same layer. Also, conductor 331, conductor 333, This shows an example in which conductors 335 and 337 are formed in the same layer. This shows an example in which 341, conductor 343, and conductor 347 are formed in the same layer. Conductors 351, 353, 355, and 357 are formed in the same layer. This shows an example of how multiple conductors can be formed in the same layer. Since the manufacturing process of the device 810 can be simplified, the display device 810 can be made at a low cost. This is possible. Furthermore, these may be formed in different layers, and of different types. It may have materials.

[0285] The display device 810 shown in Figure 27 has a light-emitting element 572. The light-emitting element 572 is made of a conductive material 7 It has 72, an EL layer 786, and a conductor 788. The conductor 788 is provided on the substrate 705 side. It functions as a common electrode. In addition, conductor 772 is conductor 351, conductor 3 41, via conductor 331, conductor 313, and conductor 301b, transistor 750 It is electrically connected to the other of the source or drain. Conductor 772 is on insulator 363. It is formed and functions as a pixel electrode. Furthermore, the EL layer 786 is made of an organic compound, or It contains inorganic compounds such as quantum dots.

[0286] Examples of materials that can be used with organic compounds include fluorescent materials or phosphorescent materials. Furthermore, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. It is possible.

[0287] In the display device 810 shown in Figure 27, an insulator 730 is provided on the insulator 363. The insulator 730 can be configured to cover a portion of the conductor 772. 572 has a light-transmitting conductor 788, and can be made into a top-emission type light-emitting element. It can. The light-emitting element 572 has a bottom emission structure that emits light towards the conductor 772. , or a dual emission structure that emits light to both conductor 772 and conductor 788 You may do so.

[0288] The light-emitting element 572 may have a microcavity structure, as will be described in detail later. This makes it possible to extract light of a predetermined color (e.g., RGB) without creating a colored layer. The display device 810 can display in color. It shall have a configuration without a colored layer. This makes it possible to suppress light absorption by the colored layer. As a result, the display device 810 It can display high-brightness images and reduce the power consumption of the display device 810. To do so. Furthermore, the EL layer 786 is formed in an island-like pattern for each pixel or in a striped pattern for each row of pixels, i.e., painted. Even when formed by division, it is possible to have a structure that does not include a colored layer.

[0289] Furthermore, the light-shielding layer 738 is provided so as to have an area that overlaps with the insulator 730. The light-shielding layer 738 is covered with an insulator 734. Also, the light-emitting element 572 and the insulator 734 The gaps are filled with a sealing layer 732.

[0290] Furthermore, a structure 778 is provided between the insulator 730 and the EL layer 786. A structure 778 is provided between the body 730 and the insulator 734. The structure 778 is columnar It is a pacer and has the function of controlling the distance (cell gap) between substrate 701 and substrate 705. Yes. Furthermore, a spherical spacer may be used as the structure 778.

[0291] On the substrate 705 side, a light-shielding layer 738 and an insulator 734 in contact with it are provided. Layer 738 has the function of blocking light emitted from adjacent areas. Alternatively, the light-shielding layer 738 is It has the function of blocking external light from reaching transistor 750, etc.

[0292] Figure 28 shows a modified version of the display device 810 shown in Figure 27, the difference being that it is provided with a colored layer 736. This differs from the display device 810 shown in Figure 27. By providing a colored layer 736, the light-emitting element 57 The color purity of the light extracted from 2 can be increased. This allows the display device 810 to have high It can display images of high quality. Also, for example, all the light-emitting elements 57 of the display device 810 Since 2 can be made into a light-emitting element that emits white light, the EL layer 786 can be painted in a different way This process does not need to be performed, and the display device 810 can be made to have a high resolution.

[0293] In Figures 27 and 28, transistors 441 and 601 are located within the substrate 701. A channel formation region is provided in the section, and transistors 441 and 6 Although a configuration in which OS transistors are stacked on top of 01 has been shown, one aspect of the present invention is this It is not limited to this. Figure 29 is a modified version of Figure 27, and Figure 30 is a modified version of Figure 28, and transistor 4 Transistor 602 and 41 are OS transistors, not transistor 601. Figure 27 shows that transistor 750 is stacked on top of transistor 603. This differs from the display device 810 with the configuration shown in Figure 28. In other words, the configuration shown in Figures 29 and 30 is different. The display device 810 has OS transistors arranged in a stack.

[0294] Insulators 613 and 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A stator 602 and a transistor 603 are provided. The substrate 701 and the insulator 613 are also provided. A transistor or the like may be provided between the substrate 701 and the insulator 61. Between 3 and , transistors 441 and 601 shown in Figures 27 and 28 A transistor with a similar configuration may also be provided.

[0295] Transistor 602 can be a transistor provided in circuit 840. Zista 603 is a transistor provided in the gate driver circuit 821, or a source driver. This can be a transistor provided in the IBA circuit 822. That is, transistor 6 02 and transistor 603 can be provided in layer 820 as shown in Figure 8, etc. As shown in 12, when the circuit 840 is located in layer 830, the transistor 60 2 can be provided in layer 830.

[0296] Transistors 602 and 603 have a similar configuration to transistor 750. It can be made into a transistor. Note that transistors 602 and 603 are It may also be used as an OS transistor with a different configuration than the Rangitta 750.

[0297] On the insulator 614 are transistors 602 and 603, as well as insulator 616, Insulator 622, Insulator 624, Insulator 654, Insulator 644, Insulator 680, Insulator 67 4, and an insulator 681 is provided. Among the insulators 654, 644, and 680 Conductive material 461 is embedded in insulator 674 and insulator 681. Here, conductive The height of the top surface of body 461 and the height of the top surface of insulator 681 can be made to be approximately the same.

[0298] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductive body 463 is embedded. Here, the height of the top surface of the conductive body 463 and the top of the insulator 501 The surface height can be made to be approximately the same.

[0299] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductive body 465 is embedded. Here, the height of the top surface of the conductive body 465 and the top of the insulator 503 The surface height can be made to be approximately the same.

[0300] An insulator 505 is provided on the conductor 465 and on the insulator 503. A conductor 467 is embedded inside. The conductor 467 is, for example, the wiring 121 shown in Figure 20. It can be provided on the same layer as the wiring 123. Here, the height of the upper surface of the conductor 467 and The height of the top surface of the insulator 505 can be made to be approximately the same.

[0301] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductive body 469 is buried. Here, the height of the top surface of the conductive body 469 and the top of the insulator 507 The surface height can be made to be approximately the same.

[0302] An insulator 509 is provided on the conductor 469 and on the insulator 507. A conductor 471 is embedded inside. The conductor 471 is, for example, the wiring 141 shown in Figure 20. It can be provided on the same layer as the wiring 143. Here, the height of the upper surface of the conductor 471 and The height of the top surface of the insulator 509 can be made to be approximately the same.

[0303] Insulators 421 and 214 are provided on the conductor 471 and on the insulator 509. A conductor 453 is embedded in the edge 421 and in the insulator 214. Here, the conductor 4 The height of the top surface of 53 and the height of the top surface of the insulator 214 can be made to be approximately the same.

[0304] As shown in Figures 29 and 30, either the source or the drain of transistor 602 is a lead Electromagnetic material 461, conductor 463, conductor 465, conductor 467, conductor 469, conductor 471 Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 3 47, conductor 353, conductor 355, conductor 357, connecting electrode 760, and anisotropic conductor It is electrically connected to the FPC716 via the 780.

[0305] Insulator 613, Insulator 614, Insulator 680, Insulator 674, Insulator 681, Insulator 50 1. Insulators 503, 505, 507, and 509 are interlayer films. It may have a function and may also function as a planarizing film that covers the uneven shape below each of them. .

[0306] By configuring the display device 810 as shown in Figures 29 and 30, the display device 810 can be made narrower. While miniaturizing and reducing the size, all the transistors in the display device 810 are OS transistors. This makes it possible to, for example, have a transistor provided in layer 820 and layer 830 The transistors provided in and can be manufactured using the same apparatus. Therefore, the table This reduces the manufacturing cost of the display device 810, making the display device 810 inexpensive. It is possible.

[0307] <Example of display device configuration 3> Figures 31(A) and (B) show subpixels 90 that can be applied to a display device according to one embodiment of the present invention. This is a top view showing an example configuration of 1. The sub-pixel 901 has the circuit configuration shown in Figure 22(B). This can be done. Here, transistor 552 has a gate as well as a back gate, and the back gate The gate is electrically connected to wiring 831. Also, transistor 554 is the gate Additionally, it has a back gate, which is the source or drain of transistor 554. On the other hand, it is electrically connected to the other electrode of the capacitive element 562 and to one electrode of the light-emitting element 572. It is being done.

[0308] Figure 31(A) shows the transistors, capacitive elements, wiring, etc. that make up the sub-pixel 901. This shows the electrostatic body and semiconductor. In Figure 31(B), in addition to the configuration shown in Figure 31(A), This shows the conductor 772 which functions as one of the electrodes of the optical element 572. (See Figure 3) In both 1(A) and (B), it functions as the other electrode of the light-emitting element 572. Conductors and the like have been omitted. Here, one electrode of the light-emitting element 572 is a pixel electrode. It has the ability to function as a common electrode, and the other electrode of the light-emitting element 572 functions as a common electrode.

[0309] As shown in Figures 31(A) and (B), the sub-pixel 901 is composed of a conductor 911 and a conductor 912. , semiconductor 913, semiconductor 914, conductor 915a, conductor 915b, conductor 91 6a, conductor 916b, conductor 917, conductor 918, conductor 919, conductor 920, conductor 921, conductor 922, conductor 923, conductor 924, conductor 925, conductor 926, conductor 927, conductor 928, conductor 929, conductor It has 930, a conductor 931, and a conductor 772.

[0310] Conductors 911 and 912 can be formed in the same process. Semiconductor 913 and The semiconductor 914 is formed in the same process, and in a process that follows that of the conductors 911 and 912. Conductors 915a and 915b, and 916a and Conductor 916b is formed in the same process, and in a process that follows conductors 911 and conductor 912. Conductors 917 and 918 are formed in the same process, and semiconductors can be formed. 913 and semiconductor 914, as well as conductors 915a, conductor 915b, conductor 916a, and It can be formed in a process after the conductor 916b.

[0311] Conductors 919 to 923 are formed in the same process, and conductors 917 and 918 It can be formed in a later process. Conductor 924 is conductor 919 to conductor 923 It can be formed in a later process. Conductors 925 to 928 are formed in the same process. Conductors 929 to conductors 924 are formed in a later process. 31 is formed in the same process and is formed in a process later than conductors 925 to 928. This can be done. Conductor 772 is formed in a later process than conductors 929 to 931. It is possible.

[0312] In this specification, etc., elements formed in the same process are provided in the same layer. Yes, it is possible. For example, conductor 911 and conductor 912 can be formed in the same process. Therefore, it can be said that conductor 911 and conductor 912 are provided in the same layer. Also, Elements formed in a later process are placed on top of elements formed in an earlier process. This is possible. For example, conductors 929 to 931 are more efficient than conductors 925 to 928. Since they can be formed in a later process, conductors 929 to 931 are conductors 92 It can be said that it is provided in a layer above the conductor 928.

[0313] Conductor 911 functions as the back gate electrode of transistor 552. 913 has a channel-forming region for transistor 552. Conductor 915a is a transistor It functions as either the source electrode or the drain electrode of the ZISTA 552. Conductor 915 b functions as either the source electrode or the drain electrode of transistor 552. Conductor 917 functions as the gate electrode of transistor 552.

[0314] Conductor 912 functions as the back gate electrode of transistor 554. 914 has a channel-forming region for transistor 554. Conductor 916a is a transistor Conductor 916 functions as either the source electrode or the drain electrode of the ZISTA 554. b functions as either the source electrode or the drain electrode of transistor 554. Conductor 918 functions as the gate electrode of transistor 554.

[0315] Conductor 919 functions as one electrode of capacitive element 562. Conductor 924, It functions as the other electrode of the capacitive element 562. The conductor 925 acts as a scanning line. It corresponds to wiring 831 which has the function of a data line. Conductor 929 is wiring which has the function of a data line. Corresponds to 832. Conductor 930 corresponds to wiring 835a which functions as a power line. The conductor 772, as described above, functions as one electrode of the light-emitting element 572. .

[0316] Conductor 911 is electrically connected to conductor 920. Conductor 912 is electrically connected to conductor 92 It is electrically connected to 3. Conductor 915a is electrically connected to conductor 921. Conductor 915b is electrically connected to conductor 919. Conductor 916a is a conductor It is electrically connected to the electric unit 922.

[0317] Conductor 916b is electrically connected to conductor 923. In other words, transistor 55 Conductor 912, which functions as the back gate electrode of transistor 4, and the saw of transistor 554 Conductor 916b, which functions as the other of a drain electrode or a standard electrode, and conductor 923 It is electrically connected via [a certain method].

[0318] Conductor 917 is electrically connected to conductor 920. In other words, transistor 552 Conductor 911, which functions as the back gate electrode of transistor 552, and the gate A conductor 917, which functions as an electrode, is electrically connected to a conductor 920. Yes, they are.

[0319] Conductor 920 is electrically connected to conductor 925. In other words, transistor 552 A conductor 917 that functions as a gate electrode and a conductor that functions as a scanning line 925 and 920 are electrically connected via the conductor 920.

[0320] Conductor 918 is electrically connected to conductor 919. Conductor 921 is electrically connected to conductor 92 It is electrically connected to 6. Conductor 922 is electrically connected to conductor 927. Conductor 923 is electrically connected to conductor 928. Conductor 924 is electrically connected to conductor 9 It is electrically connected to 28.

[0321] Conductor 926 is electrically connected to conductor 929. In other words, transistor 552 A conductor 915a that functions as either the source electrode or the drain electrode, and a data line Conductor 929, which has the function of a conductor, and conductors 921 and 926 provide electrical connections. Connected.

[0322] Conductor 927 is electrically connected to conductor 930. In other words, transistor 554 A conductor 916a having the function of either the source electrode or the drain electrode, and a power line Conductor 930, which has the function of being electrically connected, and conductors 922 and 927, are electrically connected. Connected.

[0323] Conductor 928 is electrically connected to conductor 931. Conductor 931 is electrically connected to conductor 77 It is electrically connected to 2.

[0324] Semiconductors 913 and 914 may, for example, have metal oxides. Therefore, The transistor 552 and transistor 554 can be OS transistors.

[0325] Figure 32 shows an example of the configuration of a pixel 902 composed of subpixels 901 with the configuration shown in Figure 31(B). This is a top view showing the above. In Figure 32, the sub-pixel 901R has the function of emitting red light. This shows a sub-pixel 901, and sub-pixel 901G indicates a sub-pixel 901 that has the function of emitting green light. Furthermore, sub-pixel 901B represents sub-pixel 901 which has the function of emitting blue light. This is shown in Figure 32. Thus, pixel 902 is formed by sub-pixel 901R, sub-pixel 901G, and sub-pixel 901B. It is configured as follows: Specifically, sub-pixels 901R and 901B are located in the upper section. A single pixel 902 is formed by this and the sub-pixel 901G located in the lower section. Furthermore, the sub-pixel 901G located in the upper section and the sub-pixel 901R located in the lower section A single pixel 902 is formed by the sub-pixel 901B and the sub-pixel 902.

[0326] In Figure 32, the sub-pixels 901R, 901G, and 901B are located in the upper section. The sub-pixels 901R, 901G, and 901B located in the lower section are each The configuration is such that it appears to be horizontally flipped. By using this configuration, the scan lines Sub-pixels 901 of the same color are alternately arranged in the direction of extension of the conductive material 925 which has the function of [unclear]. This allows a single data line to have the function of emitting light of the same color. The sub-pixel 901 can be electrically connected in this configuration. Two or more sub-pixels 901 from sub-pixels 901G and sub-pixels 901B are one data This prevents electrical connection with the power line.

[0327] Figure 33 is a cross-sectional view of the area shown by the dashed line A1-A2 in Figure 31(B). Insulator 10 Transistors 552 and 554 are provided on 21. An insulator 1022 is provided on the ta 552 and on the transistor 554, and the insulator 1022 An insulator 1023 is provided on top. A substrate is provided below the insulator 1021. Furthermore, between the substrate and the insulator 1021, the components of layer 820 shown in Figure 8, etc. (G It is possible to provide a source driver circuit 821, a source driver circuit 822, a circuit 840, etc. Cut.

[0328] As shown in Figure 33, conductors located in different layers function as plugs. They are electrically connected via the conductor 990. For example, the conductor 915a and the conductor 91 The conductor 921, which is located above 5a, is electrically connected to the conductor 990. Conductor 990 is conductor 453, conductor 305, conductor 337 as shown in Figure 27, etc. Conductor 353, Conductor 355, Conductor 357, Conductor 301a, Conductor 301b, Conductor The same configuration can be used for body 331, conductor 351, conductor 333, and conductor 335. .

[0329] An insulator 1024 is provided on the conductors 919 to 923 and on the insulator 1023. A conductor 924 is provided on the insulator 1024. Conductor 919 and insulator 10 The capacitive element 562 is composed of 24 and the conductor 924.

[0330] An insulator 1025 is provided on the conductor 924 and on the insulator 1024. Conductor 925 An insulator 1026 is provided on the conductor 928 and on the insulator 1025. An insulator 1027 is provided on conductors 29 to 931 and on insulator 1026.

[0331] A conductor 772 and an insulator 730 are provided on the insulator 1027. Here, the insulator 7 30 can be configured to cover a portion of the conductor 772. The conductor 772 and the EL layer 7 The light-emitting element 572 is composed of 86 and the conductor 788.

[0332] An adhesive layer 991 is provided on the conductive material 788, and an insulator 992 is provided on the adhesive layer 991. The insulator 992 on the adhesive layer 991 can be formed by the following procedure. First An insulator 992 is formed on a substrate separate from the substrate on which the light-emitting elements 572, etc., are formed. Next, the conductor 788 and the insulator 992 are bonded together by the adhesive layer 991. After that, insulation The substrate on which the body 992 is formed is peeled off. Thus, the insulator 992 is formed on the conductor 788. It is possible.

[0333] A colored layer 993 is provided on the insulator 992. In Figure 33, the colored layer 993 is colored. Layer 993a and colored layer 993b are shown. On the colored layer 993, adhesive layer 994 More circuit boards 995 are bonded to it.

[0334] The colored layer 993b has the function of transmitting light of a different color than that of the colored layer 993a. For example, Pixel 902 has a sub-pixel 901R that emits red light and a sub-pixel 901R that emits green light. It consists of a sub-pixel 901G that emits blue light and a sub-pixel 901B that emits blue light, and If layer 993a has the function of transmitting red light, then the colored layer 993b transmits green light or blue light. It has the ability to transmit light.

[0335] By forming a colored layer 993 on the insulator 992, the colored layer 993 and the light-emitting element 572 Alignment can be easily performed. This allows for the display of the display device according to one aspect of the present invention. The degree can be increased.

[0336] <Example of display device configuration 4> Figure 34(A) shows the configuration of a sub-pixel 940 that can be applied to a display device according to one embodiment of the present invention. This is a schematic diagram illustrating an example. Sub-pixel 940 is a stacked structure of sub-pixel 940_1 and sub-pixel 940_2. It can be constructed in the manner shown in Figure 24(E). The sub-pixel 940 can have the circuit configuration shown in Figure 24(E). Here, transistors 511 and 529 have a back gate in addition to the gate. The back gate is electrically connected to wiring 831_1. Also, the transistor Ta 513 has a back gate, which is electrically connected to wiring 831_2. Furthermore, transistor 521 has a back gate, and this back gate is a capacitive element. The other electrode of sub-electrode 517 and one electrode of light-emitting element 572 are electrically connected.

[0337] Figure 34(B) is a top view showing an example configuration of sub-pixel 940_1. In Figure 34(B), sub Conductors and semiconductors that constitute transistors, capacitive elements, wiring, etc., of pixel 940_1 This indicates that.

[0338] As shown in Figure 34(B), the sub-pixel 940_1 consists of a conductor 951, a semiconductor 952, and a semiconductor Conductor 953, Conductor 954a, Conductor 954b, Conductor 955a, Conductor 955 b, conductor 956, conductor 957, conductor 958, conductor 959, conductor 96 0, conductor 961, conductor 962, conductor 963, conductor 964, conductor 96 It has 5, a conductor 966, and a conductor 967.

[0339] Semiconductors 952 and 953 are formed in the same process, and are formed in a process after the conductor 951. This can be achieved. Conductors 954a and 954b, and conductors 955a and conductors The conductive body 955b is formed in the same process and can be formed in a later process than the conductive body 951. Conductors 956 and 957 are formed in the same process, and semiconductors 952 and 957 are formed in the same process. 53, and conductors 954a, 954b, 955a, and 955b It can be formed in a later process.

[0340] Conductors 958 to 962 are formed in the same process, and conductors 956 and 957 It can be formed in a later process. Conductor 963 is conductor 958 to conductor 962 It can be formed in a later process. Conductors 964 to 967 are formed in the same process. This can be achieved and formed in a process later than that of the conductor 963.

[0341] Conductor 951 serves as the back gate electrode for transistors 511 and 529. It has the function of a scanning line. In addition, the conductor 951 is connected to the wiring 831_1 which has the function of a scanning line. handle.

[0342] The semiconductor 952 has a channel formation region for the transistor 511. The conductor 954a is It functions as either the source electrode or the drain electrode of transistor 511. Conductor 954b functions as either the source electrode or the other drain electrode of transistor 511. Conductor 956 functions as the gate electrode of transistor 511.

[0343] The semiconductor 953 has a channel formation region for the transistor 529. The conductor 955a is It functions as either the source electrode or the drain electrode of transistor 529. Conductor 955b functions as either the source electrode or the other drain electrode of transistor 529. Conductor 957 functions as the gate electrode of transistor 529.

[0344] Conductor 958 functions as one electrode of capacitive element 515. Conductor 963, It functions as the other electrode of the capacitive element 515. The conductor 964 is a data line. It corresponds to the functional wiring 832_1. Conductor 965 has the function of a power line. Corresponds to wiring 543.

[0345] Conductor 951 is electrically connected to conductor 962. Conductor 954a is electrically connected to conductor 9 It is electrically connected to 59. Conductor 954b is electrically connected to conductor 958. Conductor 955a is electrically connected to conductor 960. Conductor 955b is It is electrically connected to the conductor 961.

[0346] Conductors 956 and 957 are electrically connected to conductor 962. It functions as the back gate electrode for transistors 511 and 529, and scanning The conductor 951, which corresponds to the wiring 831_1 that functions as a line, is connected via the conductor 962. The conductor 956, which functions as the gate electrode of transistor 511, and the transistor It is electrically connected to the conductor 957, which functions as the gate electrode of sta 529.

[0347] Conductor 959 is electrically connected to conductor 964. In other words, transistor 511 A conductor 954a that functions as either the source or the drain, and a data line The functional conductor 964 is electrically connected to the conductor 959.

[0348] Conductor 960 is electrically connected to conductor 965. In other words, transistor 529 A conductor 955a that functions as either the source or the drain, and a device as a power line The conductive material 965, which has electrical properties, is electrically connected to the conductive material 960 via the conductive material 960.

[0349] Conductor 961 is electrically connected to conductor 967. Conductor 963 is electrically connected to conductor 96 It is electrically connected to 6.

[0350] Semiconductors 952 and 953 may, for example, have metal oxides. Therefore, The transistor 511 and transistor 529 can be OS transistors.

[0351] Figure 35(A) shows the transistor, capacitive elements, wiring, etc. that make up the sub-pixel 940_2. This shows a conductor and a semiconductor. In addition to the configuration shown in Figure 35(A), Figure 35(B) shows the same configuration. This shows a conductor 772 that functions as one electrode of the light-emitting element 572. In both Figure 35(A) and (B), the function of the other electrode of the light-emitting element 572 is shown. Conductors and other materials are omitted.

[0352] As shown in Figures 35(A) and (B), the sub-pixel 940_2 consists of a conductor 968 and a conductor 96 9, conductor 970, semiconductor 971, semiconductor 972, conductor 973a, and conductor 9 73b, conductor 974a, conductor 974b, conductor 975, conductor 976, The electric element 977, the conductor 978, the conductor 979, the conductor 980, the conductor 981, The electric body 982, the conductor 983, the conductor 984, the conductor 985, the conductor 986, It has an electric element 987 and a conductor 772.

[0353] Conductors 968 to 970 can be formed in the same process. Semiconductor 971 and The semiconductor 972 is formed in the same process, and in a process after the conductors 968 to 970 Conductors 973a and 973b, and 974a and Conductor 974b is formed in the same process, and in a process later than conductors 968 to 970 Conductors 975 and 976 are formed in the same process, and semiconductors can be formed. 971 and semiconductor 972, as well as conductors 973a, conductor 973b, conductor 974a, and It can be formed in a process after the conductor 974b.

[0354] Conductors 977 to 981 are formed in the same process, and conductors 975 and 976 It can be formed in a later process. Conductor 982 is conductor 977 to conductor 981 It can be formed in a later process. Conductors 983 to 985 are formed in the same process. Conductors 986 and 986 can be formed in a later process than conductor 982. 87 is formed in the same process and in a process later than conductors 983 to 985. This can be done. Conductor 772 is formed in a later process than conductors 986 and 987. It is possible.

[0355] Conductor 968 functions as the back gate electrode of transistor 513, and also scans This corresponds to wiring 831_2, which functions as a line. Semiconductor 971 is transistor 51 It has 3 channel-forming regions. The conductor 973a is the source electrode of transistor 513 or It functions as one of the drain electrodes. Conductor 973b is of transistor 513 It functions as either a source electrode or the other of a drain electrode. Conductor 975 is a transistor It functions as the gate electrode of the Ta513.

[0356] Conductor 970 functions as the back gate electrode of transistor 521. 972 has a channel forming region for transistor 521. Conductor 974a is a transistor Conductor 974 functions as either the source electrode or the drain electrode of the ZISTA 521. b functions as either the source electrode or the drain electrode of transistor 521. Conductor 976 functions as the gate electrode of transistor 521.

[0357] Conductor 977 functions as one electrode of capacitive element 517. Conductor 982, It functions as the other electrode of the capacitive element 517. The conductor 983 is a data line. It corresponds to the functional wiring 832_2. Conductor 986 has the function of a power line. Corresponds to wiring 537. Conductor 772, as described above, is connected to one electrode of light-emitting element 572 and It has the function of being a .

[0358] Conductor 968 is electrically connected to conductor 978. Conductor 969 is electrically connected to conductor 97 It is electrically connected to 7. Conductor 970 is electrically connected to conductor 981. Conductor 973a is electrically connected to conductor 979. Conductor 973b is conductive It is electrically connected to body 977. Conductor 974a is electrically connected to conductor 980. It is being done.

[0359] Conductor 974b is electrically connected to conductor 981. In other words, transistor 52 Conductor 970, which functions as the back gate electrode of transistor 521, and the saw Conductor 974b, which functions as the other of a drain electrode or a conductor, and conductor 981 It is electrically connected via [a certain method].

[0360] Conductor 975 is electrically connected to conductor 978. In other words, transistor 513 Conductor 968, which functions as the back gate electrode of transistor 513, and the gate A conductor 975, which functions as an electrode, is electrically connected to a conductor 978. Furthermore, conductor 976 is electrically connected to conductor 977.

[0361] Conductor 979 is electrically connected to conductor 983. In other words, transistor 513 A conductor 973a having the function of either the source or the drain, and a data line The functional conductor 983 is electrically connected to the conductor 979.

[0362] Conductor 980 is electrically connected to conductor 984. Conductor 981 is electrically connected to conductor 98 It is electrically connected to 5. Conductor 982 is electrically connected to conductor 985. .

[0363] Conductor 984 is electrically connected to conductor 986. In other words, transistor 521 A conductor 974a having the function of either the source electrode or the drain electrode, and a power line and Conductor 986, which has the function of being electrically connected, and conductors 980 and 984, are electrically connected. Connected.

[0364] Conductor 985 is electrically connected to conductor 987. Conductor 987 is electrically connected to conductor 77 It is electrically connected to 2.

[0365] Semiconductors 971 and 972 may, for example, have metal oxides. Therefore, The transistor 513 and transistor 521 can be OS transistors.

[0366] Figure 36 is a top view showing the stacked structure of sub-pixel 940_1 and sub-pixel 940_2, and sub-pixel This shows the electrical connection relationship between 940_1 and sub-pixel 940_2. Note that the diagram is for clarity. Therefore, the conductor 772, which has the function of a pixel electrode and is provided in the sub-pixel 940_2, is shown in Figure It is not shown.

[0367] As shown in Figure 36, the conductor 966 provided in sub-pixel 940_1 and sub-pixel 940_2 The conductor 969 provided therein is electrically connected to the sub-pixel 940_ The other electrode of the capacitive element 515 provided in 1 is connected to the transient provided in the sub-pixel 940_2 The source or drain of transistor 513, the gate of transistor 521, and the capacitive element 5 It can be electrically connected to one of the 17 electrodes. Also provided in the sub-pixel 940_1 The conductor 967 and the conductor 970 provided on the sub-pixel 940_2 are electrically connected. This allows the source or channel of the transistor 529 provided in the sub-pixel 940_1 to be controlled. The other side of the rain is connected to the other electrode of the capacitive element 517 provided in the sub-pixel 940_2, the transient The other side of the source or drain of the sta 521 and one electrode of the light-emitting element 572 are electrically connected. It can be continued.

[0368] Figure 37 is composed of sub-pixels 940 with the configuration shown in Figures 34(B) and 35(B). This is a top view showing an example configuration of pixel 941. In Figure 37, sub-pixel 940R emits red light. This shows a sub-pixel 940 that has the function of emitting light, and sub-pixel 940G has the function of emitting green light. This shows a sub-pixel 940, and sub-pixel 940B is a sub-pixel 940 that has the function of emitting blue light. As shown in Figure 37, sub-pixel 940R, sub-pixel 940G, sub-pixel 940B, Pixel 941 is composed of the sub-pixel 940R located in the upper row. And sub-pixel 940B and sub-pixel 940G located in the lower row form one pixel 941 This is the configuration. In addition, there is a sub-pixel 940G located in the upper section and a sub-pixel located in the lower section. A single pixel 941 is formed by sub-pixels 940R and 940B.

[0369] In Figure 37, the sub-pixels 940R, 940G, and 940B are located in the upper section. The sub-pixels 940R, 940G, and 940B located in the lower section are each The configuration is such that it appears to be horizontally flipped. By using this configuration, the scan lines Subpixels of the same color in the direction of extension of the conductors 951 and 968, which have the function of being conductors. 940 can be arranged alternately. This allows the same color light to be used for each data line. The sub-pixel 940, which has an ejection function, can be electrically connected. Furthermore, two or more sub-pixels 940R, sub-pixel 940G, and sub-pixel 940B are selected. This prevents 40 from being electrically connected to a single data line.

[0370] Figure 38 is a cross-sectional view of the area indicated by the dashed line A3-A4 in Figures 34(B) and 35(B). Yes. On the insulator 1031 is a transistor, which is provided in the sub-pixel 940_1. A transistor 511 and a transistor 529 are provided. Also, on transistor 511, and An insulator 1032 is provided on the transistor 529, and an insulator 1 is provided on the insulator 1032. 033 is provided. Furthermore, a substrate is provided below the insulator 1031. Between the plate and the insulator 1031 are the components of layer 820 as shown in Figure 8, etc. (gate driver circuit Circuits 821, source driver circuits 822, circuits 840, etc. can be provided.

[0371] As shown in Figure 38, conductors located in different layers function as plugs. They are electrically connected via the conductor 990.

[0372] An insulator 1034 is provided on the conductors 958 to 962 and on the insulator 1033. A conductor 963 is provided on the insulator 1034. Conductor 958 and insulator 10 The capacitive element 515 is composed of 34 and the conductor 963.

[0373] An insulator 1035 is provided on the conductor 963 and on the insulator 1034. Conductor 964 An insulator 1036 is provided on the conductor 967.

[0374] On the insulator 1036 is a transistor, which is provided in the sub-pixel 940_2. A transistor 513 and a transistor 521 are provided. Also, on transistor 513 and the transistor An insulator 1042 is provided on the inverter 521, and an insulator 1043 is provided on the insulator 1042. A system will be established.

[0375] An insulator 1044 is provided on the conductors 977 to 981 and on the insulator 1043. A conductor 982 is provided on the insulator 1044. Conductor 977 and insulator 104 The capacitive element 517 is composed of 4 and the conductor 982.

[0376] An insulator 1045 is provided on the conductor 982 and on the insulator 1044. Conductor 983 An insulator 1046 is provided on the conductor 985 and on the insulator 1045. An insulator 1047 is provided on 86, on the conductor 987, and on the insulator 1046.

[0377] A conductor 772 and an insulator 730 are provided on the insulator 1047. Here, in Figure 33 As shown, the insulator 730 can be configured to cover a portion of the conductor 772. The light-emitting element 572 is composed of a conductor 772, an EL layer 786, and a conductor 788. ru.

[0378] Furthermore, similar to the case shown in Figure 33, an adhesive layer 991 is provided on the conductive material 788, and the adhesive layer An insulator 992 is provided on 991. Furthermore, a colored layer 993 is provided on the insulator 992. The substrate 995 is bonded to the colored layer 993 by an adhesive layer 994.

[0379] <Example of light-emitting element configuration> Figures 39(A) to (E) show examples of the configuration of the light-emitting element 572. Figure 39(A) shows This shows a structure (single structure) in which an EL layer 786 is sandwiched between conductors 772 and 788. As mentioned above, the EL layer 786 contains a light-emitting material, for example, an organic compound that emits light. It contains ingredients.

[0380] Figure 39(B) shows the stacked structure of the EL layer 786. Here, as shown in Figure 39(B) In the light-emitting element 572 of the structure, the conductor 772 functions as an anode, and the conductor 788 functions as an cathode. It functions as a pole.

[0381] The EL layer 786 consists of a hole injection layer 721, a hole transport layer 722, and an emissive layer 7 on top of the conductor 772. 23. It has a structure in which an electron transport layer 724 and an electron injection layer 725 are sequentially stacked. If body 772 functions as a cathode and conductor 788 functions as an anode, The stacking order will be reversed.

[0382] The light-emitting layer 723 has a combination of light-emitting materials and other materials as appropriate, and emits a desired light color. A configuration can be made that produces fluorescence or phosphorescence. In addition, the light-emitting layer 723 A layered structure with different light colors may also be used. In this case, the light used in each layered light-emitting layer is also important. For each substance and other materials, different materials can be used.

[0383] In the light-emitting element 572, for example, the conductor 772 shown in Figure 39(B) is used as the reflective electrode, The electrolytic body 788 is used as a semi-transmissive / semi-reflective electrode, forming a micro-optical resonator (microcavity) structure. This causes the light emitted from the light-emitting layer 723 contained in the EL layer 786 to resonate between the two electrodes. This allows for strengthening the light emitted through the conductor 788.

[0384] Furthermore, the conductor 772 of the light-emitting element 572 is made of a reflective conductive material and a light-transmitting conductive material. In the case of a reflective electrode consisting of a laminated structure with an electrically conductive material (transparent conductive film), the thickness of the transparent conductive film is Optical adjustment can be performed by controlling it. Specifically, it is obtained from the light-emitting layer 723. For a given wavelength λ of light, the distance between the electrodes of conductor 772 and conductor 788 is mλ / 2 (however It is preferable to adjust the coordinates so that m is in a neighborhood of natural numbers.

[0385] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 723, the conductor 77 The optical distance from 2 to the region (emission region) where the desired light is obtained from the light-emitting layer 723, and the conductor 7 The optical distance from 88 to the region (emission region) where the desired light from the light-emitting layer 723 can be obtained, and It is preferable to adjust them so that they are in the vicinity of (2m'+1)λ / 4 (where m' is a natural number). It is important to note that the light-emitting region referred to here is the interaction between holes and electrons in the light-emitting layer 723. This shows the recombination region.

[0386] By performing such optical adjustments, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. By narrowing the torque curve, it is possible to obtain emission with good color purity.

[0387] However, in the above case, the optical distance between conductor 772 and conductor 788 is strictly speaking conductor 772 This can be described as the total thickness from the reflective region in the material to the reflective region in the conductive material 788. However, it is difficult to precisely determine the reflection regions in conductors 772 and 788. Therefore, assuming that any position on the conductors 772 and 788 is a reflection region is sufficient to explain the above. The effect can be obtained. In addition, the conductor 772 and the light-emitting element that produces the desired light The optical distance to the layer is, strictly speaking, the reflection region in conductor 772 and the emission of light from which the desired light is obtained. It can be said that this is the optical distance to the light-emitting region in the layer. However, in the conductor 772 Precisely determining the reflective region and the light-emitting region in the light-emitting layer that yields the desired light is important. Because it is difficult, any position on the conductor 772 is designated as a reflection region, and the light-emitting layer is designated as the source of the desired light. The above-mentioned effect can be sufficiently obtained by assuming that the location of the intention is the luminescent region.

[0388] The light-emitting element 572 shown in Figure 39(B) has a microcavity structure, therefore the same EL Even with layers, it is possible to extract light of different wavelengths (monochromatic light). Therefore, different emission This eliminates the need for color separation (e.g., RGB) to obtain light colors. Therefore, it enables higher resolution. It is easy to do. It can also be combined with a colored layer. Furthermore, it can produce positive wavelengths of a specific wavelength. This allows for increased light emission intensity in the planar direction, thus enabling lower power consumption.

[0389] Furthermore, the light-emitting element 572 shown in Figure 39(B) does not have a microcavity structure. Alternatively, the light-emitting layer 723 may be structured to emit white light, and a colored layer may be provided. This allows for the extraction of light of a predetermined color (e.g., RGB). Furthermore, an EL layer 786 is formed. When doing so, if different colors of light are applied using different paint schemes, the desired color can be achieved without creating a separate colored layer. Light can be extracted.

[0390] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (transparent electrode, semi-transparent electrode). (e.g., hyperreflective or semi-reflective electrodes) can be used. If the translucent electrode is a transparent electrode, then the transparent electrode The visible light transmittance of the electrode shall be 40% or more. In addition, in the case of semi-transparent and semi-reflective electrodes, semi-transparent The reflectance of the semi-reflective electrode for visible light is 20% to 80%, preferably 40% to 70%. Let's assume the following. Also, the resistivity of these electrodes is 1 × 10⁻⁶. -2 A value of Ωcm or less is preferable.

[0391] If the conductor 772 or conductor 788 is a reflective electrode (reflective electrode), then reflectivity The visible light reflectance of the electrode having is 40% or more and 100% or less, preferably 70% or more and 10% or less. The resistivity of this electrode should be 0% or less. -2 A value of Ωcm or less is preferable.

[0392] The configuration of the light-emitting element 572 may be as shown in Figure 39(C). Figure 39(C) shows a guide Two EL layers (EL layer 786a and EL layer 786b) are placed between the electric body 772 and the conductor 788. A laminated structure is provided, having a charge generation layer 792 between the EL layer 786a and the EL layer 786b. The light-emitting element 572 is shown in a tandem structure. Therefore, the current efficiency and external quantum efficiency of the light-emitting element 572 can be increased. The display device 810 can display high-brightness images. In addition, the power consumption of the display device 810 is reduced. It can be reduced. Here, EL layer 786a and EL layer 786b are shown in Figure 39(B). It can be configured similarly to the EL layer 786.

[0393] When a voltage is supplied between the conductor 772 and the conductor 788, the charge generation layer 792 generates EL Electrons are injected into one of the layers 786a and EL layer 786b, and holes are injected into the other. It has the function of entering. Therefore, the potential of conductor 772 becomes higher than the potential of conductor 788. When voltage is supplied in this manner, electrons are injected from the charge generation layer 792 to the EL layer 786a, Holes will be injected from the load generation layer 792 into the EL layer 786b.

[0394] Furthermore, the charge generation layer 792 transmits visible light (specifically, from the viewpoint of light extraction efficiency). It is preferable that the visible light transmittance of the charge generation layer 792 is 40% or more. The conductivity of the generation layer 792 is lower than the conductivity of the conductor 772 or the conductivity of the conductor 788. That's good too.

[0395] The configuration of the light-emitting element 572 may be as shown in Figure 39(D). Figure 39(D) shows a guide Three EL layers (EL layer 786a, EL layer 786b, and A EL layer 786c) is provided, between EL layer 786a and EL layer 786b, and EL layer 7 A light-emitting element 57 has a tandem structure with a charge generation layer 792 between 86b and the EL layer 786c. Figure 2 is shown. Here, EL layer 786a, EL layer 786b, and EL layer 786c are shown in Figure 39( The same configuration as the EL layer 786 shown in B) can be used. The light-emitting element 572 can be shown in Figure 39(D By adopting the configuration shown in ), the current efficiency and external quantum efficiency of the light-emitting element 572 can be further increased. This allows for the display device 810 to display even higher brightness images. Furthermore, the power consumption of the display device 810 can be further reduced.

[0396] The configuration of the light-emitting element 572 may be as shown in Figure 39(E). Figure 39(E) shows a guide Between the electric body 772 and the conductor 788, there are n layers of EL (EL layer 786(1) to EL layer 786 (n)) is provided, and a tandem having a charge generation layer 792 between each EL layer 786 The structure of the light-emitting element 572 is shown. Here, the EL layers 786(1) to 786(n) are The same configuration as the EL layer 786 shown in Figure 39(B) can be used. Note that Figure 39(E) Among the EL layer 786, there are EL layer 786(1), EL layer 786(m), and EL layer 786( This shows m+1) and EL layer 786(n). Here, m is an integer between 2 and n (inclusive). Let n be an integer greater than m. The larger the value of n, the better the current efficiency and output of the light-emitting element 572. The quantum efficiency can be increased. Therefore, a high-brightness image can be displayed on the display device 810. This allows for the reduction of power consumption of the display device 810.

[0397] <Component materials of a light-emitting element> Next, we will describe the constituent materials that can be used in the light-emitting element 572.

[0398] <<Conductors 772 and 788>> Conductors 772 and 788 can fulfill the functions of an anode and a cathode, respectively, as follows: The materials shown can be used in appropriate combinations. For example, metals, alloys, and electrically conductive compounds. Substances and mixtures thereof can be used as appropriate. Specifically, In-Sn oxide ( ITO (also known as ITO), In-Si-Sn oxide (also known as ITSO), In-Zn oxide, In-W-Zn oxide is one example. Other examples include aluminum (Al), titanium (Ti), Chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) Copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), Molybdenum (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold Metals such as (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd). , and alloys containing these in appropriate combinations can also be used. Other examples not listed above Elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), i Rare earth metals such as terbium (Yb) and alloys containing them in appropriate combinations, and other grains. Fens and the like can be used.

[0399] <<Hole injection layer 721 and hole transport layer 722>> The hole injection layer 721 is transferred from the anode conductor 772 or the charge generation layer 792 to the EL layer 786. This is a hole-injection layer, and it contains a material with high hole-injection potential. Here, EL layer 786 These are EL layer 786a, EL layer 786b, EL layer 786c, and EL layer 786(1) to E The L layer is assumed to include 786(n).

[0400] Materials with high hole injection potential include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples include transition metal oxides such as tungsten oxide and manganese oxide. In addition, Phthalocyanines such as thalocyanine (abbreviated as H2Pc) and copper phthalocyanine (abbreviated as CuPc) Nin compounds, 4,4'-bis[N-(4-diphenylaminophenyl)-N-phen [Diamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylf [phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviation: DNTPD), or poly(3,4-eth Dioxythiophene / Poly(styrene sulfonate) (Abbreviation: PEDOT / PSS) Polymers such as the above can be used.

[0401] Furthermore, materials with high hole injection potential include hole transport materials and acceptor materials (electron acceptors). Composite materials containing (accepting materials) can also be used. In this case, the acceptor material provides a positive result. Electrons are extracted from the pore-transporting material, generating holes in the hole injection layer 721, and the hole transport layer 72 Holes are injected into the light-emitting layer 723 via 2. The hole injection layer 721 is a hole transport material. It may also be formed as a single layer of a composite material containing a material and an acceptor material (electron-accepting material). However, if hole transport material and acceptor material (electron-accepting material) are stacked in separate layers... It may be formed in layers.

[0402] The hole transport layer 722 discharges the holes injected from the conductor 772 by the hole injection layer 721. This is the layer that transports to the light layer 723. The hole transport layer 722 is a layer containing a hole transport material. Yes. The hole transport material used in the hole transport layer 722 is particularly the HOMO standard of the hole injection layer 721. It is preferable to use a device that has the same or a similar HOMO level.

[0403] The acceptor material used in the hole injection layer 721 is from Group 4 of the periodic table. Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, oxide Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Rhenium oxide is one example. In particular, molybdenum oxide is stable even in the atmosphere and absorbs It is preferable because it has low moisture content and is easy to handle. Other options include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. It contains 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane ( Abbreviation: F4-TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1 ,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), etc. are used. It is possible.

[0404] The hole transport material used in the hole injection layer 721 and the hole transport layer 722 is 10 -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. If the substance is suitable, other substances can be used.

[0405] Examples of hole transport materials include π-electron-rich heteroaromatic compounds (for example, carbazole derivatives and Indole derivatives) and aromatic amine compounds are preferred, and a specific example is 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NP) D) N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-bi Phenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9 ,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB) ), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine ( Abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) Riphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9 H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[4 -(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: P CPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2 -yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole] -3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: P CBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole- 3-Iyl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4 '-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PC) BANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol) 9,9-dimethyl-N- Phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]flu Oren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl- 9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (Abbreviation: PCBASF), 4,4',4''-tris(carbazole-9-yl)tri Phenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenylamine) Mino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3 [-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA) Compounds having aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviated) Name: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6 -Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP) ,3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP),3-[N -(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole Bazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole- 3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) ), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino ]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4-( N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl Carbazole (abbreviated as CzPA), such as 9-anthracenyl phenyl carbazole. Compounds having a basol skeleton, 4,4',4''-(benzene-1,3,5-triyl) Tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated) Name: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl] Thio Compounds having a fen skeleton, 4,4',4''-(benzene-1,3,5-triyl) Li(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl- 9H-Fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBF) Examples include compounds having a furan skeleton, such as FLBi-II.

[0406] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphen Nylamine (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl [amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( Abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis High molecular weight compounds such as (phenyl)benzidine (abbreviated as Poly-TPD) can also be used. can.

[0407] However, the hole transport material is not limited to the above, and may be one or more known materials combined. Combined, the hole injection layer 721 and hole transport layer 722 are used as hole transport materials. Yes, it is possible. Furthermore, the hole transport layer 722 may be formed from multiple layers. For example, For example, a first hole transport layer and a second hole transport layer may be stacked on top of each other.

[0408] <<Emitting layer 723>> The luminescent layer 723 is a layer containing luminescent material. The luminescent material can be blue, purple, or blue-violet. Substances that emit light in various colors such as green, yellow-green, yellow, orange, and red are used as appropriate. Here, Figure As shown in 39(C), (D), and (E), when the light-emitting element 572 has multiple EL layers By using different light-emitting materials in the light-emitting layer 723 provided in each EL layer, A configuration that exhibits a certain emission color (for example, white obtained by combining complementary emission colors) (Light emission) can be achieved. For example, if the light-emitting element 572 has the configuration shown in Figure 39(C) In total, the light-emitting material used in the light-emitting layer 723 provided in the EL layer 786a, and the EL layer 786b By using a different light-emitting material in the light-emitting layer 723 provided in the EL layer 7 The emission color exhibited by 86a and the emission color exhibited by the EL layer 786b can be made different. Furthermore, a laminated structure in which one of the light-emitting layers has a different light-emitting material may also be used.

[0409] Furthermore, the light-emitting layer 723 contains one or more organic compounds in addition to the light-emitting substance (guest material). It may also contain (host material, assist material). Furthermore, it may contain one or more types of organic compounds. For this purpose, hole-transporting materials, electron-transporting materials, or both can be used.

[0410] When the light-emitting element 572 has the configuration shown in Figure 39(C), the EL layer 786a and EL A blue light-emitting material (blue light-emitting material) is used as a guest material in either of the layers 786b. It is used as such, and on the other side, a substance that emits green light (green light-emitting substance) and a substance that emits red light (red light-emitting substance) It is preferable to use a color-emitting material. This method involves the emission of blue light from a blue light-emitting material (blue light-emitting layer). This is effective when efficiency or lifespan is inferior to other materials. Note that, in this case, single-ply blue light-emitting material is used. Using a light-emitting material that converts the excitation energy into light emission in the visible light region, green and red light-emitting materials are used. If we use a light-emitting material that converts triplet excitation energy into emission in the visible light region, then RGB This is preferable because it improves the spectral balance.

[0411] There are no particular limitations on the luminescent material that can be used in the luminescent layer 723, and the singlet excitation energy A light-emitting material that converts energy into visible light emission, or a triplet excitation energy in the visible light region A light-emitting substance that converts light into light can be used. Examples of such light-emitting substances include: The following are some examples.

[0412] Examples of light-emitting materials that convert singlet excitation energy into light include fluorescent materials. Examples include pyrene derivatives, anthracene derivatives, triphenylene derivatives, and ful Orene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives Examples include pyrene derivatives, phenanthrene derivatives, and naphthalene derivatives. In particular, pyrene derivatives are luminescent. It is preferable because it has a high quantum yield. A specific example of a pyrene derivative is N,N'-bis(3-methyl (Tylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N '-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis (Dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation) :1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N' -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diamine) Len-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan) )-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diamine) (Lu)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine]( Abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[( 6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine](abbreviation: Examples include 1,6BnfAPrn-03). Furthermore, pyrene derivatives are used in one embodiment of the present invention. This group of compounds is useful for achieving a blue chromaticity.

[0413] In addition, 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B) Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-Cal Bazole-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-di Phenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-di Phenyl-N-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazo 4-(10-phenyl-9-anthryl)-4 (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PC) BAPA), 4-[4-(10-phenyl-9-antryl)phenyl]-4'-(9- Phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPBA) ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP) ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- Phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviated) Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-A Nantrillyl]phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N -[4-(9,10-diphenyl-2-antryl)phenyl]-N,N',N'-triphenyl Phenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), etc., can be used. ru.

[0414] Furthermore, examples of light-emitting materials that convert triplet excitation energy into light include phosphorescent materials. The quality (phosphorescent material) and thermally activated delayed fluorescence (Thermally activated delayed fluorescence) Examples include tivated delayed fluorescence (TADF) materials. It can be done.

[0415] Examples of phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. These exhibit different emission colors (emission peaks) depending on the substance, so select as appropriate as needed. Select and use.

[0416] It exhibits a blue or green color, and the peak wavelength of its emission spectrum is between 450 nm and 570 nm. Examples of phosphorescent materials include the following substances:

[0417] For example, Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazole-3-yl-κN 2 ]phenyl-κC}iridium (III) (Abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4) -Diphenyl-4H-1,2,4-Triazolat) Iridium(III) (Abbreviation: [Ir (Mptz)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl Iridium(III) (abbreviation: [Ir(iPrp) Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl]), Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl Iridium(III) (abbreviation: [Ir(iPr5) Organometallic complexes having a 4H-triazole skeleton, such as btz)3]), Tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolate Iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), Tris(1-methicone) Iridium(II) 5-phenyl-3-propyl-1H-1,2,4-triazolato) I) (abbreviation: [Ir(Prptz1-Me)3]) has a 1H-triazole skeleton The organometallic complex, fac-tris[1-(2,6-diisopropylphenyl)-2-f [Enyl-1H-imidazole] Iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] Phenanthridine Iridium (III) (Abbreviation: Ir(dmpimpt-Me)3) Organometallic complexes having an imidazole skeleton such as ]), bis[2-(4',6'-diflu Olophenyl)pyridinato-N,C 2’ Iridium(III) tetrakis(1-pyrazo Lyl) Borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)p Riginato-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), S[2-(3,5-bistrifluoromethylphenyl)pyridinate-N,C 2’ Iridi Um(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[ 2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium (III ) acetylacetonate (abbreviation: Fir(acac)) and other compounds that have an electron-withdrawing group Examples include organometallic complexes using nylpyridine derivatives as ligands.

[0418] It exhibits a green or yellow color, and the peak wavelength of its emission spectrum is between 495 nm and 590 nm. Examples of phosphorescent materials include the following substances:

[0419] For example, Tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation) :[Ir(mppm)3]), Tris(4-t-butyl-6-phenylpyrimidinato) Lydium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonate) Iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4) -Phenylpyrimidina) Iridium(III) (Abbreviation: [Ir(tBuppm)2(a (cac)), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato] Iridium(III) (Abbreviation: [Ir(nbppm)2(acac)]) (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Lupyrimidinat] Iridium(III) (Abbreviation: [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl Phenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation) :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( Organometallic iridium complexes having a pyrimidine skeleton such as (acac), (acetylated iridium complexes Setonato)bis(3,5-dimethyl-2-phenylpyradinate)iridium(III) Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -Isopropyl-3-methyl-2-phenylpyradinato) Iridium(III) (abbreviation: Organometallic compounds with a pyrazine skeleton, such as [Ir(mppr-iPr)2(acac)]). Iridium complex, Tris(2-phenylpyridinato-N,C) 2’ Iridium (III) (Abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C) 2’ ) Iridi Um(III)acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), Su(benzo[h]quinolinate)iridium(III)acetylacetonate (abbreviation: [I r(bzq)2(acac)]), Tris(benzo[h]quinolinate) Iridium(II I) (abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C) 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinazole) N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a Organometallic iridium complexes having a pyridine skeleton such as cac), bis(2,4-di) Phenyl-1,3-oxazolato-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluoro) Phenyl)phenyl]pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzo) Thiazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( In addition to organometallic complexes such as bt)2(acac)]), tris(acetylacetonate)(mono) Phenanthroline Terbium(III) (Abbreviation: [Tb(acac)3(Phen)] Examples include rare earth metal complexes such as ).

[0420] Among those mentioned above, those having a pyridine skeleton (especially a phenylpyridine skeleton) or a pyrimidine skeleton Organometallic iridium complexes are useful for achieving the green chromaticity in one aspect of the present invention. It is a composite group.

[0421] It exhibits a yellow or red color, and the peak wavelength of its emission spectrum is between 570 nm and 750 nm. Examples of phosphorescent materials include the following substances:

[0422] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrim [Dinato] Iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), Su[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Zium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (Dipivaloylmethic acid) Thanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III Organic compounds having a pyrimidine skeleton, such as (abbreviation: [Ir(d1npm)2(dpm)]) Metal complex, (acetylacetonato)bis(2,3,5-triphenylpyradinato)iridi Um(III) (abbreviation: [Ir(tppr)2(acac)]), Bis(2,3,5-) Iridium(III) (dipivaloylmethanato) (abbreviation: [Ir (tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl-2)} [Phenyl-5-phenyl-2-pyradinyl-κN]phenyl-κC}(2,6-dimethyl Chil-3,5-heptandionato-κ 2 O,O') Iridium(III) (Abbreviation: [Ir (dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazi [Nyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanediol) Nato-κ 2 O,O') Iridium(III) (Abbreviation: [Ir(dmdppr-dmCP) 2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxali Nato-N,C 2’ Iridium(III) (abbreviation: Ir(mpq)2(acac)) (Acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ ) Iri Dium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonate) )Bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) Organometallic compounds with a pyrazine skeleton, such as (abbreviation: [Ir(Fdpq)2(acac)]) Complexes, or Tris(1-phenylisoquinolinato-N,C) 2’ ) Iridium (III) (abbreviated) Name: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iridi Um(III)acetylacetonate (abbreviation: [Ir(piq)2(acac)]) Organometallic complexes having a pyridine skeleton, 2,3,7,8,12,13,17,18-O The ethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Platinum complex, Tris(1,3-diphenyl-1,3-propanedionato)(monofena Europium(III) (abbreviation: [Eu(DBM)3(Phen)]), RIS[1-(2-tenoyl)-3,3,3-trifluoroacetonate](monophenant) Like Europium(III) (abbreviation: [Eu(TTA)3(Phen)]) Rare earth metal complexes are one example.

[0423] Among those described above, organometallic iridium complexes having a pyrazine skeleton are used in one aspect of the present invention. This is a group of compounds useful for achieving a certain red chromaticity. In particular, [Ir(dmdppr-dm Organometallic iridium complexes having a cyano group, such as CP)2(dpm), have high stability. It is preferable.

[0424] Furthermore, as for blue light-emitting materials, the photoluminescence peak wavelength is 430 nm or higher. A material with a wavelength of 70 nm or less, more preferably 430 nm to 460 nm, may be used. Furthermore, as for green light-emitting materials, the peak wavelength of photoluminescence is 500 nm or higher. A material with a wavelength of 0 nm or less, more preferably 500 nm to 530 nm, may be used. (Red) As for light-emitting materials, those with a photoluminescence peak wavelength of 610 nm to 680 nm More preferably, a material with a wavelength of 620 nm to 680 nm should be used. Luminescence measurements can be performed using either a solution or a thin film.

[0425] By using such compounds in combination with the microcavity effect, the aforementioned colors can be more easily achieved. This degree can be achieved. At this time, the semi-permeable material necessary to obtain the microcavity effect... The film thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm to 40 nm. More preferably... More specifically, it is greater than 25nm and less than or equal to 40nm. Note that efficiency decreases above 40nm. There is a possibility that this will happen.

[0426] The organic compounds (host material, assist material) used in the light-emitting layer 723 include light-emitting substances ( A material having an energy gap larger than the energy gap of the (stock material) Alternatively, multiple types can be selected and used. Furthermore, the hole transport materials mentioned above and the electron transport materials described later are also applicable. The feeding materials can also be used as either host materials or assist materials.

[0427] When the light-emitting material is a fluorescent material, the host material has an energy level of singlet excited state. It is preferable to use an organic compound with a large θ and a low energy level in the triplet excited state. For example, it is preferable to use anthracene derivatives or tetracene derivatives. Specifically, 9 -phenyl-3-[4-(10-phenyl-9-antryl)phenyl]-9H-carb Zole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracol [Cenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl] [nyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis Examples include (biphenyl-2-yl)tetracene.

[0428] When the luminescent material is a phosphorescent material, the host material is the triplet excitation energy of the luminescent material. (The energy difference between the ground state and the triplet excited state) is greater than the triplet excitation energy. You should select the appropriate compound. In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxali Dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, fer In addition to nanthroline derivatives, aromatic amines and carbazole derivatives can also be used. .

[0429] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Ris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq) 2) Bis(2-methyl-8-quinolinolate)(4-phenylphenolate)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq) ), bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviation: ZnPB) O), bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviation: ZnBT) Metal complexes such as Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) -1,3,4-Oxadiazole (abbreviation: PBD), 1,3-Bis[5-(p-tert [-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OX D-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl (Nyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5 (-benzenetriyl)-tris(1-phenyl-1H-benzoimidazole) (abbreviation: T) PBI), vasophenanthroline (abbreviation: BPhen), vasocuproin (abbreviation: BC) P), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phena Botroline (abbreviation: NBphen), 9-[4-(5-phenyl-1,3,4-oxadi Heterocyclic morphology of azole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), etc. Examples include aromatic amine compounds such as compound compounds, NPB, TPD, and BSPB.

[0430] Also, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Examples include condensed polycyclic aromatic compounds such as benzo[g,p]chrysene derivatives, and specifically, 9 ,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-antryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-phenyl-9H-carbazole-3-yl)aminoanthracene (abbreviation: 2PCA) PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -Anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-diph Phenyl-9-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole Lu (abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthrace d(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD) NA), 9,9'-biantril (abbreviation: BANT), 9,9'-(stilbene-3,3 '-Diphenanthrene (abbreviation: DPNS), 9,9'-(Stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviated as TPB3), etc., can be used.

[0431] Furthermore, when multiple organic compounds are used in the light-emitting layer 723, the compounds that form the excitation complex emit light. It is preferable to use it in mixture with other substances. In this case, various organic compounds can be used in appropriate combinations. It can be used, but in order to efficiently form an excited complex, it is necessary to make it easier to accept holes. By combining a composite material (hole-transporting material) with a compound that readily accepts electrons (electron-transporting material) It is particularly preferable to combine them. Furthermore, specific examples of hole-transporting materials and electron-transporting materials are provided below. The materials shown in this embodiment can be used.

[0432] TADF materials are materials that can be converted from a triplet excited state to a singlet excited state by a small amount of thermal energy. It enables reverse intersystem crossing (op-conversion) and efficiently generates light (fluorescence) from the singlet excited state. It refers to materials that exhibit this phenomenon. Furthermore, the conditions under which thermally activated delayed fluorescence can be efficiently obtained are three The energy difference between the doublet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably. One example is that the voltage is between 0 eV and 0.1 eV. Also, regarding delayed fluorescence in TADF materials... Light refers to emission that has a spectrum similar to ordinary fluorescence but with a significantly longer lifetime. Its lifespan is 10 -6 10 seconds or more, preferably 10 -3 It is more than a second.

[0433] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavin. Examples include derivatives and eosin. Also, magnesium (Mg), zinc (Zn), cadmium Um (Cd), tin (Sn), platinum (Pt), indium (In), or palladium Examples of metal-containing porphyrins include those containing (Pd), etc. For example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), meso Porphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin- Tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl Ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethyl Porphyrin-tin fluoride complex (SnF2(OEP)), Ethioporphyrin-tin fluoride SnF2(Etio I) complex, octaethylporphyrin-platinum chloride complex (Pt Examples include Cl2OEP.

[0434] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[ 2,3-a]carbazole-11-yl)-1,3,5-triazine (PIC-TRZ) , 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol [Il-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (PCCz PTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6- Diphenyl-1,3,5-triazine (PXZ-TRZ), 3-[4-(5-phenyl- 5,10-Dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2 ,4-triazole (PPZ-3TPT), 3-(9,9-dimethyl-9H-acrylidine) -10-il)-9H-xanthen-9-on(ACRXTN),bis[4-(9,9- Dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]- π-electron-rich and π-electron-deficient heteroaromatic rings such as 10'-one (ACRSA) Heterocyclic compounds having the above characteristics can be used. Substances directly bonded to a foot-shaped heteroaromatic ring exhibit the characteristics of a donor and π-electron-excess heteroaromatic ring. The acceptor properties of the foot-shaped complex aromatic rings become stronger, and the singlet and triplet excited states are enhanced. This is particularly preferable because it reduces the energy difference.

[0435] Furthermore, when using TADF materials, they can also be used in combination with other organic compounds.

[0436] <<Electron transport layer 724>> The electron transport layer 724 emits electrons injected from the conductor 788 by the electron injection layer 725. This is the layer that transports electrons to the optical layer 723. The electron transport layer 724 is a layer containing an electron transport material. Yes, there is. The electron transport material used in the electron transport layer 724 is 1 × 10 -6 cm 2 / Vs or higher A material with electron mobility is preferred. Furthermore, any material with higher electron transport capabilities than hole transport is preferred. Other materials can be used.

[0437] Examples of electron transport materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. , or metal complexes having thiazole ligands, oxadiazole derivatives, triazoles Examples include derivatives, phenanthroline derivatives, pyridine derivatives, and bipyridine derivatives. In addition, π-electron-deficient heteroaromatic compounds, such as nitrogen-containing heteroaromatic compounds, can also be used. can.

[0438] Specifically, Alq3, Tris(4-methyl-8-quinolinolato)aluminum(III )(Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (Abbreviation: BeBq2), BAlq, Zn(BOX)2, bis[2-(2-hydroxyphosphate) Metal complexes such as [zinc(II)(b (4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadi Azole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-Oxadiazole-2-yl]benzene (abbreviation: OXD-7), 3-(4'- tert-butylphenyl)-4-phenyl-5-(4''-biphenyl)-1,2,4 -Triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4- Ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p- EtTAZ), vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviated) Name: Heteroaromatic compounds such as BzOs, 2-[3-(dibenzothiophen-4-yl) [enyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[ 3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h] Noxaline (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl- 9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2 CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibe Nzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(diben Zothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDB) Use quinoxalines or dibenzoquinoxaline derivatives such as TPDBq-II. It is possible.

[0439] Also, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl Fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)(abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' Using polymer compounds such as (-bipyridine-6,6'-diyl) (abbreviation: PF-BPy) It is possible to stay there.

[0440] Furthermore, the electron transport layer 724 is not only a single layer, but also consists of two or more layers made of the above material stacked together. It may also be a structure like that.

[0441] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a material with high electron injection potential. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), Lithium oxide (LiO x Alkali metals, alkaline earth metals, or similar materials such as ) Compounds can be used. Also, rare earth metals such as erbium fluoride (ErF3) can be used. Compounds can be used. Alternatively, electrides may be used in the electron injection layer 725. As an electride, for example, a mixed oxide of calcium and aluminum is used to increase the electron content. Examples include substances added in concentration. Furthermore, the substances constituting the electron transport layer 724 described above are used. It is possible to stay there.

[0442] Furthermore, the electron injection layer 725 is a composite material made by mixing an organic compound and an electron donor. Materials may be used. In such composite materials, electrons are generated in the organic compound by the electron donor. Therefore, it has excellent electron injection and electron transport properties. In this case, as an organic compound, It is preferable that the material is excellent in transporting the generated electrons, specifically, for example, the electrons mentioned above The electron transport material (such as a metal complex or heteroaromatic compound) used in the transport layer 724 is Yes, it is possible. Any substance that exhibits electron-donating properties towards organic compounds can be used as the electron donor. Physically, alkali metals, alkaline earth metals, and rare earth metals are preferred, as are lithium and cesium. Examples include magnesium, calcium, erbium, and ytterbium. Also, Lucalic metal oxides and alkaline earth metal oxides are preferred, as are lithium oxides and calcium acid Examples include ammonium compounds and barium oxides. Furthermore, Lewis bases such as magnesium oxide can be used. It is also possible to use organic compounds such as tetrathiafulvalene (abbreviated as TTF). It is also possible to do so.

[0443] <<Charge generation layer 792>> When a voltage is applied between the conductor 772 and the conductor 788, the charge generation layer 792 generates the charge. Of the two EL layers 786 in contact with the charge generation layer 792, the EL layer 7 that is closer to the conductor 772 It has the function of injecting electrons into 86 and injecting holes into the EL layer 786 on the side closer to the conductor 788. For example, in the light-emitting element 572 with the configuration shown in Figure 39(C), the charge generation layer 792 is It has the function of injecting electrons into EL layer 786a and holes into EL layer 786b. The charge generation layer 792 has a configuration in which electron acceptors are added to a hole transport material. Even if such a configuration exists, it may be one in which an electron donor is added to the electron transport material. Furthermore, both of these configurations may be stacked. By forming layer 792, the display device 810 is driven when the EL layer is stacked. It can suppress the rise in voltage.

[0444] In the charge generation layer 792, if an electron acceptor is added to the hole transport material, As an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoro Examples include quinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically These are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, and tartium oxide. Examples include ngsten, manganese oxide, and rhenium oxide.

[0445] In the charge generation layer 792, if an electron donor is added to the electron transport material, As electron donors, alkali metals, alkaline earth metals, rare earth metals, or elements from the periodic table. Metals belonging to groups 2 and 13 in the region, as well as their oxides and carbonates, can be used. Physically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca, ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is preferable to use an organic compound such as tetrathianaphthalene as an electron donor. It may be used as such.

[0446] The light-emitting element 572 is fabricated using a vacuum process such as vapor deposition, or a spin coating or injection molding process. Solution processes such as the quette method can be used. When using the vapor deposition method, spa Methods such as ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition. Physical vapor deposition (PVD) or chemical vapor deposition (CVD) can be used. In particular, light emission Functional layers included in the EL layer of the device (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) For the infill layer and charge generation layer, vapor deposition methods (such as vacuum deposition) and coating methods (such as dip coating) are used. (die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (in Cudget printing, screen printing, offset printing, flexographic printing. It can be formed by methods such as printing, gravure printing, microcontact printing, etc. .

[0447] In this embodiment, each functional layer constituting the EL layer of the light-emitting element (hole injection layer, hole transport layer) is shown. The layers (luminescent layer, electron transport layer, electron injection layer) and charge generation layer are limited to the materials described above. However, other materials can be used in combination as long as they can fulfill the function of each layer. This is possible. One example is high-molecular-weight compounds (oligomers, dendrimers, polymers, etc.). ), medium-molecular-weight compounds (compounds in the intermediate region between low molecular weight and high molecular weight: molecular weight 400-4000), none Mechanical compounds (such as quantum dot materials) can be used. colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, Core-type quantum dot materials and the like can be used.

[0448] The display device 810 shown in this embodiment can also be applied to the light source shown in Embodiment 1. Yes, it is possible. By applying the display device 810 to the light source shown in Embodiment 1, the light source emits light. The elements can be arranged at high density. As a result, an electronic device according to one aspect of the present invention is It can accurately recognize the facial features of the user, such as their facial expressions, when using an electronic device.

[0449] Figure 40(A) is a cross-sectional view showing an example of the configuration of an imaging device according to one embodiment of the present invention. As shown, between substrate 1001 and substrate 995, there is a transistor 1003 and a light-emitting element 5 72, the photoelectric conversion element 1010, and the colored layer 993 can be sandwiched and provided in this configuration. Here, transistor 1003 can be, for example, an OS transistor. Figure 40(A) shows four transistors 1003.

[0450] An insulator 1002 is provided on the substrate 1001, and a transistor 100 is placed on the insulator 1002. 3 is provided. An insulator 1004 is provided on transistor 1003, and insulator 100 An insulator 1005 is provided on 4. A light-emitting element 572 and a photoelectric element are placed on the insulator 1005. A conversion element 1010 is provided in a region that overlaps with the light-emitting element 572 or the photoelectric conversion element 1010. A colored layer 993 is provided so as to have the following. In Figure 40(A), two light-emitting elements 572( Light-emitting element 572_1, light-emitting element 572_2), and two photoelectric conversion elements 1010 (photoelectric conversion The diagram shows the conversion element 1010_1 and the photoelectric conversion element 1010_2), and each has a different transistor. This shows the configuration in which the inverter 1003 is electrically connected. Also, Figure 40(A) shows A colored element that has the function of transmitting red light, having an area that overlaps with the light-emitting element 572_1. A colored layer 993R, which is layer 993, is provided and has a region that overlaps with the light-emitting element 572_2. In addition, a colored layer 993IR is provided, which is a colored layer 993 having the function of transmitting infrared light. The structure is shown. Furthermore, the colored layer has a region that overlaps with the photoelectric conversion element 1010_1. A colored layer 99 is provided with a region 993R that overlaps with the photoelectric conversion element 1010_2. This shows a configuration in which 3IR is provided.

[0451] The photoelectric conversion element 1010 receives light L from outside the imaging device. ex It receives light, and the received light L ex It has the function of converting the illuminance into an electrical signal.

[0452] The light-emitting element 572 preferably has the function of emitting white light and infrared light. The light emitted from the light-emitting element 572_1 passes through the colored layer 993R and is captured as red light R. The light is emitted to the outside of the image device. Also, the light emitted from the light-emitting element 572_2 is directed to the colored layer 99 It is emitted outside the imaging device as infrared light (IR) through 3IR. The emitted red light R and infrared light IR strike an object and are reflected, illuminating the photoelectric conversion element 1010. It is projected. For example, the imaging device with the configuration shown in Figure 40(A) is the spectacle-type electronic device shown in Embodiment 1. When applied to a device, red light R and infrared light IR are emitted onto the face of the user of the glasses-type electronic device. Irradiated and reflected light L ex This can be detected by the photoelectric conversion element 1010.

[0453] The imaging device has the function of detecting both red light and infrared light, so that red light or infrared light Rather than having the function to detect only one of the two, the imaging device is, for example, an electric... It can accurately detect the user's eyes and the surrounding conditions of the sub-device. This allows for: For example, accurately recognizing the facial features of the user, such as the facial expression of the user of the electronic device according to one aspect of the present invention. Therefore, an electronic device according to one aspect of the present invention can, for example, accurately measure the user's fatigue level, emotions, etc. It can have the function of making accurate estimations.

[0454] Furthermore, if the display device according to one aspect of the present invention has a photoelectric conversion element, the display device is shown in Figure 40 ( The configuration shown in A) can be used. In this case, the display device has a device that transmits red light. A light-emitting element 572 having an overlapping region with a colored layer 993 having the function, and an infrared light-transmitting element In addition to the light-emitting element 572 having an overlapping region with the colored layer 993 which has the function, the element transmits green light. A light-emitting element 572 having an overlapping region with a colored layer 993 having a function, and a blue light transmitting element A light-emitting element 572 is provided, having a region that overlaps with the colored layer 993 which has the function.

[0455] The light-emitting element 572 is formed by the conductor 772, the EL layer 786, and the conductor 788. Furthermore, the conductor 772, the active layer 1011, and the conductor 788 form the photoelectric conversion element 10 10 is formed. Here, transistor 1003 is electrically connected to conductor 772. ru.

[0456] The active layer 1011 is a stacked structure in which a p-type semiconductor and an n-type semiconductor are stacked to achieve a pn junction. A structure in which p-type semiconductors, i-type semiconductors, and n-type semiconductors are stacked to achieve a pin junction. It can be made into a layered structure, etc.

[0457] The semiconductor used in the active layer 1011 may be an inorganic semiconductor such as silicon, or an organic compound. Organic semiconductors can be used. In particular, by using organic semiconductor materials, the light-emitting element 57 It is possible to form the EL layer 786 and the active layer 1011 of the EL layer 2 using the same vacuum deposition method. This is preferable because it simplifies the process and allows for the standardization of manufacturing equipment.

[0458] When using an organic semiconductor material as the active layer 1011, the n-type semiconductor material is... -ren (for example C 60 , C 70 Using an electron-accepting organic semiconductor material such as (etc.) or its derivatives. It is possible to have it. Also, as a material for p-type semiconductors, copper(II) phthalocyanine (Co pper(II) phthalocyanine (CuPc) and tetraphenyldibene Zoperifuranthine (Tetraphenyldibenzoperiflanthene) Electron-donating organic semiconductor materials such as DBP can be used. The active layer 1011 is As a stacked structure (pn stacked structure) of electron-accepting semiconductor material and electron-donating semiconductor material Alternatively, an electron-accepting semiconductor material and an electron-donating semiconductor material may be co-deposited between them. A laminated structure with a bulk heterostructure layer (pin laminated structure) may also be used. To suppress dark current when not emitting light, the above-mentioned pn stacked structure or pin stacked structure is used. Around the periphery of the structure (upper or lower), there are layers that function as hole block layers or electron block layers. A layer that functions in this way may be provided.

[0459] In the light-emitting element 572, an EL layer 786 is provided on the conductive material 772. In the conversion element 1010, an active layer 1011 is provided on the conductor 772. A conductive material 788 is provided covering the EL layer 786 and the active layer 1011. The conductor 788 connects both the electrodes of the light-emitting element 572 and the electrodes of the photoelectric conversion element 1010. It can be configured to serve multiple purposes.

[0460] Figure 40(B) is a cross-sectional view showing an example of the configuration of an imaging device according to one aspect of the present invention, and Figure 40(A) This is a modified version of the configuration shown. The imaging device with the configuration shown in Figure 40(B) has a light-emitting element 572. The fact that it is not kicked is a difference from the imaging device with the configuration shown in Figure 40(A).

[0461] If an electronic device according to one aspect of the present invention has an imaging device configured as shown in Figure 40(B), the imaging device By providing a light source outside the device, the imaging device can detect the light emitted from the light source. This is possible. For example, the imaging device with the configuration shown in Figure 40(B) is the spectacle-type electronic imaging device shown in Embodiment 1. When applied to a device, the red light emitted from the light source may be projected onto the face of the user of the glasses-type electronic device. Colored light and infrared light are irradiated, and the reflected light L ex The photoelectric converter 1010 detects this. It is possible.

[0462] By configuring the imaging device of an electronic device according to one aspect of the present invention as shown in Figure 40(B), The imaging device can be equipped with a high density of photoelectric conversion elements 1010.

[0463] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., are at least partially accurate. This can be implemented in combination with other configuration examples or drawings as appropriate.

[0464] This embodiment can be appropriately combined with other embodiments described herein, at least in part. They can be implemented together.

[0465] (Embodiment 3) In this embodiment, a transistor that can be used in a display device according to one aspect of the present invention is I will explain about that.

[0466] <Transistor Configuration Example 1> Figures 41(A), (B), and (C) show a display device that can be used in one embodiment of the present invention. This is a top view and a cross-sectional view of transistor 200A and the area surrounding transistor 200A. Pixel array 833, gate driver circuit 821, source driver circuit shown in the first form of implementation, etc. Apply transistor 200A to the transistors in 822 and circuit 840. It is possible.

[0467] Figure 41(A) is a top view of transistor 200A. Also, Figures 41(B) and (C) are This is a cross-sectional view of transistor 200A. Here, Figure 41(B) is a cross-sectional view of Figure 41(A) with A1 -This is a cross-sectional view of the area indicated by the dashed line in A2, showing the channel length direction of transistor 200A. This is also a cross-sectional view. Furthermore, Figure 41(C) shows the section indicated by the dashed line A3-A4 in Figure 41(A). This is a cross-sectional view of the position, and is also a cross-sectional view of transistor 200A in the channel width direction. In the top view of 41(A), some elements have been omitted for clarity.

[0468] Transistor 200A is connected to a metal oxide 230a placed on a substrate (not shown) and , metal oxide 230b placed on metal oxide 230a, and on metal oxide 230b There, conductors 242a and 242b are arranged spaced apart from each other, and conductor 242a It is positioned on top of and on the conductor 242b, and an opening is formed between the conductor 242a and the conductor 242b. The insulator 280, the conductor 260 placed in the opening, and the metal oxide 230b Displaced between the conductor 242a, conductor 242b, and insulator 280 and conductor 260 The insulator 250, metal oxide 230b, conductor 242a, conductor 242b, and insulating It has a body 280, an insulator 250, and a metal oxide 230c disposed between them. As shown in Figures 41(B) and (C), the upper surface of the conductor 260 is the insulator 250, the insulator It is preferable that the upper surfaces of 254, metal oxide 230c, and insulator 280 coincide substantially with each other. In the following, metal oxide 230a, metal oxide 230b, and metal oxide 230c Sometimes these are collectively referred to as metal oxide 230. Also, conductors 242a and conductor 242 Sometimes, all components b are collectively referred to as conductor 242.

[0469] As shown in Figure 41(B), transistor 200A has conductor 242a and conductor 242 The side of b on the conductive material 260 side has a generally vertical shape. Note that the transistor shown in Figure 41 ZISTA 200A is not limited to this, but also includes conductors 242a and conductors 242b. The angle between the side and bottom surfaces shall be 10° to 80°, preferably 30° to 60°. It is also possible that the opposing sides of the conductor 242a and the conductor 242b have multiple surfaces. It's fine if you do that.

[0470] Furthermore, as shown in Figures 41(B) and (C), the insulator 224, metal oxide 230a, and metal acid A metal oxide 230b, a conductor 242a, a conductor 242b, and a metal oxide 230c, and an insulator 2 It is preferable that an insulator 254 is placed between 80 and . Here, the insulator 254 is shown in Figure As shown in 41(B) and (C), the side surface of the metal oxide 230c and the top surface of the conductor 242a Side view, top and side view of conductor 242b, side view of metal oxide 230a, metal oxide 230b It is preferable that the side surface and the area in contact with the upper surface of the insulator 224 are present.

[0471] In transistor 200A, the channel is formed in the channel formation region (hereinafter referred to as the channel formation region). Also known as ) and in its vicinity, metal oxide 230a, metal oxide 230b, and gold The present invention is not limited to a configuration in which three layers of the 230c oxide are stacked. It is not that. For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure. The above layered structure may also be used. In addition, in transistor 200A, conductor 2 Although 60 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, For example, the conductor 260 may have a single-layer structure or a multilayer structure of three or more layers. Furthermore, each of metal oxides 230a, 230b, and 230c is 2 It may have a layered structure of more than one layer.

[0472] For example, metal oxide 230c is a first metal oxide and a second metal acid on the first metal oxide When it has a layered structure consisting of oxides, the first metal oxide is similar to metal oxide 230b. The second metal oxide has a composition, and it is preferable that the second metal oxide has a composition similar to that of metal oxide 230a. It's nice.

[0473] Here, the conductor 260 functions as the gate electrode of the transistor, and the conductor 242a and The conductor 242b functions as either a source electrode or a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. It is formed to be embedded in the region. Here, conductor 260, conductor 242a and conductor The arrangement of the electric element 242b is selected in a self-aligned manner with respect to the opening of the insulator 280. In transistor 200A, the gate electrode is placed between the source electrode and the drain electrode. They can be arranged in a self-aligned manner. Therefore, the conductor 260 is provided with a positioning margin. Because it can be formed without any additional steps, the occupied area of ​​transistor 200A can be reduced. This allows for high-resolution displays. Furthermore, it enables narrower bezels on display devices. It can be used as a border.

[0474] Furthermore, as shown in Figure 41, the conductor 260 is provided inside the insulator 250. 60a and a conductor 260b provided so as to be embedded inside the conductor 260a, It is preferable to have it.

[0475] Furthermore, transistor 200A is mounted on the substrate (Figure 41(A), (B), (C) as shown in Figure 41(A), (B), (C) An insulator 214 placed on top of (not shown), and an insulator 2 placed on top of the insulator 214 16, a conductor 205 arranged to be embedded in the insulator 216, and the insulator 216 An insulator 222 placed on top of the conductor 205, and an insulator 2 placed on top of the insulator 222 It is preferable to have 24 and . Also, metal oxide 230a is disposed on the insulator 224. It is preferable that this be done.

[0476] Furthermore, on top of the transistor 200A, there is an insulator 274 that functions as an interlayer film, and an insulator 2 It is preferable that 81 is arranged. Here, the insulator 274 is the conductor 260, the insulator 25 0, insulator 254, metal oxide 230c, and are arranged in contact with the upper surface of insulator 280 This is preferable.

[0477] Insulators 222, 254, and 274 contain hydrogen (e.g., hydrogen atoms, hydrogen molecules). It is preferable that the insulator has a function to suppress the diffusion of at least one of the following. For example, insulator 22 2. Insulators 254 and 274 are insulators 224, 250 and 28 It is preferable that the hydrogen permeability is lower than 0. Also, insulators 222 and 254 are acid It has the function of suppressing the diffusion of an element (for example, at least one such element, such as an oxygen atom or oxygen molecule). Preferably, insulator 222 and insulator 254 are insulator 224, insulator 250 Furthermore, it is preferable that the oxygen permeability is lower than that of the insulator 280.

[0478] Here, insulator 224, metal oxide 230, and insulator 250 are insulator 280 and insulating Body 281 is separated by insulator 254 and insulator 274. Therefore, the insulator 224, metal oxide 230, and insulator 250, and insulator 280 and insulator 281 are contained in This can suppress the inclusion of impurities such as hydrogen, as well as excess oxygen.

[0479] Furthermore, the conductor 240 (conductor) is electrically connected to transistor 200A and functions as a plug. It is preferable that an electric element 240a and a conductor 240b are provided. Insulator 241 (insulator 241a, and insulator 241) in contact with the side surface of the functional conductor 240 b) is provided. That is, insulator 254, insulator 280, insulator 274, and insulator 2 An insulator 241 is provided in contact with the inner wall of the opening 81. Also, in contact with the side surface of the insulator 241 A first conductive element of the conductor 240 is provided, and further inside, a second conductive element of the conductor 240 is provided. The configuration may be such that the upper surface of the conductor 240 and the upper surface of the insulator 281 are considered. The surface height can be made to be approximately the same. Note that in transistor 200A, the first conductor of conductor 240 The present invention describes a configuration in which the electrolytic body and the second conductive material of the conductive material 240 are laminated, but the present invention is This is not limited to the above. For example, the conductor 240 may be a single layer or a laminated structure of three or more layers. The structure may be configured to be provided in this way. If the structure has a layered structure, an ordinal number may be assigned in the order of formation, and the section They may be treated differently.

[0480] Furthermore, transistor 200A includes a metal oxide 230 (metal oxide) that contains a channel formation region. 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter also called an oxide semiconductor). For example, gold As for the metal oxide that forms the channel-forming region of the group oxide 230, as mentioned above, bandg It is preferable to use a device with a voltage of 2 eV or higher, preferably 2.5 eV or higher.

[0481] Furthermore, as shown in Figure 41(B), the metal oxide 230b is located in a region that does not overlap with the conductor 242. The film thickness in this region may be thinner than the film thickness in the region overlapping with conductor 242. When forming 242a and the conductor 242b, a portion of the upper surface of the metal oxide 230b is removed. It is formed by this process. A conductive film that will become a conductor 242 is formed on the upper surface of the metal oxide 230b. When a film is formed, a region with low resistance may be formed near the interface with the conductive film. As such, located between the conductor 242a and conductor 242b on the upper surface of the metal oxide 230b, By removing the low-resistance region, the formation of channels in that region is suppressed. It is possible.

[0482] According to one aspect of the present invention, a display device having small transistors and high resolution is provided. It can be used as a display device having a transistor with a large on-current and high brightness. It can provide a fast-operating display device having a fast-operating transistor. It can be provided. Alternatively, it has a transistor with stable electrical characteristics and a highly reliable display. A display device can be provided. Alternatively, it has a transistor with a small off-current and low power consumption. This can provide a display device with low performance.

[0483] Detailed configuration of transistor 200A that can be used in a display device according to one aspect of the present invention I will explain this.

[0484] The conductor 205 is arranged to have an overlapping region with the metal oxide 230 and the conductor 260. It is preferable that the conductor 205 be embedded in the insulator 216. Therefore, it is preferable to ensure good flatness of the upper surface of the conductor 205. For example, conductor 205 The average surface roughness (Ra) of the top surface is 1 nm or less, preferably 0.5 nm or less, more preferably 0 It should be less than 0.3 nm. This will result in the insulator 224 being formed on top of the conductor 205. The aim is to improve the flatness and enhance the crystallinity of metal oxide 230b and metal oxide 230c. It is possible.

[0485] Here, the conductor 260 functions as the first gate (also called the top gate) electrode. In some cases, the conductor 205 is used as the second gate (also called the back gate) electrode. In some cases, it may function as follows: In that case, the potential applied to conductor 205 is applied to conductor 260. By changing the potential independently, without linking it to the other potential, the V of the 200A transistor can be controlled. th Control It can be controlled. In particular, by applying a negative potential to the conductor 205, the transient can be controlled. V of Ta200A th By making it greater than 0V, it becomes possible to reduce the off-current. However, Therefore, applying a negative potential to conductor 205 is better than not applying a negative potential to conductor 260 The drain current of the 200A transistor is reduced when the applied potential is 0V. can.

[0486] Furthermore, the conductor 205 is provided in a larger area than the channel formation region in the metal oxide 230. This is good. In particular, as shown in Figure 41(C), the conductor 205 is channel of the metal oxide 230. It is preferable that the extension extends to the region outside the end that intersects the width direction. On the outer side of the side surface in the channel width direction of the metal oxide 230, the conductor 205 and the conductor It is preferable that the electric element 260 is superimposed on the electric element via an insulator.

[0487] With the above configuration, the electric field of the conductor 260 which functions as the first gate electrode and The electric field of the conductor 205, which functions as a second gate electrode, causes the metal oxide 23 The channel formation region of 0 can be electrically surrounded.

[0488] Furthermore, as shown in Figure 41(C), the conductor 205 is extended and also functions as wiring. However, it is not limited to this, and a conductive material that functions as wiring is located beneath the conductor 205. It may also be configured to include a body.

[0489] Furthermore, the conductor 205 is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use this. Although the conductor 205 is shown as a single layer, it may also be a laminated structure. For example, a laminate of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0490] Furthermore, beneath the conductor 205 are hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides. It has the function of suppressing the diffusion of impurities such as molecules (N2O, NO, NO2, etc.) and copper atoms (above) The impurities are less likely to permeate.) A conductor may be provided. Alternatively, oxygen (for example, oxygen atoms, acid) may be used. A conductive material that has the function of suppressing the diffusion of at least one of elementary molecules (i.e., the above oxygen does not easily permeate it). It is preferable to provide an electric element. In this specification, the diffusion of impurities or oxygen is suppressed. The function is to suppress the diffusion of one or all of the above-mentioned impurities or oxygen. Let's assume that.

[0491] By providing a conductor having the function of suppressing oxygen diffusion beneath the conductor 205, This can suppress the oxidation of the electrochemical element 205, which leads to a decrease in conductivity. It also suppresses the diffusion of oxygen. Examples of conductors having this function include tantalum, tantalum nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. Therefore, the conductor 205 is the above conductor The electrical material can be in a single layer or a multi-layer structure.

[0492] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that it has the function of a barrier insulating film that suppresses this. Therefore, insulator 214 is hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule (N2O, It has the function of suppressing the diffusion of impurities such as NO, NO2, and copper atoms (the above impurities permeate) It is difficult to do so.) It is preferable to use an insulating material. Alternatively, oxygen (for example, oxygen atoms, oxygen An insulating material that has the function of suppressing the diffusion of at least one of molecules (the above oxygen is less permeable) It is preferable to use a material with properties.

[0493] For example, aluminum oxide or silicon nitride is preferred as the insulator 214. This allows impurities such as water or hydrogen to enter the transistor from the substrate side of the insulator 214. This can suppress diffusion to the 200A side. Alternatively, the acid contained in the insulator 224, etc. This suppresses the diffusion of the element towards the substrate side beyond the insulator 214.

[0494] Furthermore, the insulators 216, 280, and 281, which function as interlayer films, are insulators It is preferable that the dielectric constant is lower than 214. By using a material with a low dielectric constant as the interlayer film... This can reduce parasitic capacitance between wires. For example, insulator 216, insulator 28 0, and as insulator 281, silicon oxide, silicon oxide nitride, silicon oxide nitride, nitrile Silicon oxide, fluorinated silicon oxide, carbon-added silicon oxide, carbon and nitrogen Silicon oxide with added elements, or silicon oxide with voids, can be used as appropriate.

[0495] Insulators 222 and 224 function as gate insulators.

[0496] Here, the insulator 224 in contact with the metal oxide 230 is preferably one that deoxygenates upon heating. In this specification, the oxygen released by heating is sometimes referred to as excess oxygen. For example. The insulator 224 may be silicon oxide or silicon oxide nitride, etc., as appropriate. By providing an insulator in contact with the metal oxide 230, oxygen deficiencies in the metal oxide 230 are eliminated. This can reduce the noise and improve the reliability of the 200A transistor.

[0497] Specifically, as the insulator 224, an oxide material is used from which some oxygen is removed by heating. Preferably, an oxide that desorbs oxygen upon heating is TDS (Thermal Deoxygenate). In sorption spectroscopy analysis, the amount of oxygen converted to oxygen atoms Desorption amount is 1.0 × 10 18 atoms / cm 3 Preferably 1.0 × 10 19 ato ms / cm 3 More preferably 2.0 × 10 19 atoms / cm 3 The above, or 3 .0 × 10 20 atoms / cm 3 The above describes the oxide film. Note that during the above TDS analysis... The surface temperature of the film in this case is 100°C to 700°C, or 100°C to 400°C. The following range is preferred.

[0498] Furthermore, as shown in Figure 41(C), the insulator 224 does not overlap with the insulator 254 and is made of metal. In some cases, the film thickness in the region that does not overlap with oxide 230b may be thinner than the film thickness in other regions. Insulator 224, if it does not overlap with insulator 254 and does not overlap with metal oxide 230b In areas where there is no film, the film thickness is preferably such that the above-mentioned oxygen can diffuse sufficiently.

[0499] Insulator 222, like insulator 214, allows impurities such as water or hydrogen to penetrate from the substrate side. It is preferable that it has the function of a barrier insulating film that suppresses contamination of ZISTA 200A. For example, it is preferable that the insulator 222 has lower hydrogen permeability than the insulator 224. The edge 222, insulator 254, and insulator 274 form the insulator 224 and metal oxide 230 , and by surrounding the insulator 250 etc., impurities such as water or hydrogen from the outside are prevented from entering the transistor This can prevent intrusion into the 200A range.

[0500] Furthermore, the insulator 222 allows for the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable that the insulator has a function to suppress (the above oxygen does not easily permeate). For example, insulator 2 It is preferable that 22 has lower oxygen permeability than the insulator 224. By having the function of suppressing the diffusion of pure substances, the oxygen contained in the metal oxide 230 is directed toward the substrate. This is preferable because it reduces diffusion. Also, the conductor 205 has properties of the insulator 224. This suppresses the reaction between oxygen and the oxygen present in the metal oxide 230.

[0501] The insulator 222 is an oxide of either or both aluminum and hafnium, which are insulating materials. It is preferable to use an insulator containing aluminum and / or hafnium oxides. As an insulator, it is preferable to use aluminum oxide or hafnium oxide. Alternatively, It is preferable to use oxides containing luminium and hafnium (hafnium aluminate, etc.). It is so. When an insulator 222 is formed using such a material, the insulator 222 becomes metallic acid Release of oxygen from oxide 230, and from the periphery of transistor 200A It functions as a layer that suppresses the incorporation of impurities such as hydrogen.

[0502] Alternatively, these insulators may include, for example, aluminum oxide, bismuth oxide, or germanium oxide. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added. Alternatively, these insulators may be nitrided. The above insulation Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated in the body.

[0503] Furthermore, the insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, acid Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi An insulating material containing so-called high-k materials such as O3 or (Ba,Sr)TiO3 (BST) The edge material may be used in a single layer or in a multilayer configuration. As transistors become smaller and more integrated, Thinning of the gate insulator may cause problems such as leakage current. By using a high-k material as an insulator that functions in this way, the physical film thickness is maintained while transient This makes it possible to reduce the gate potential during static operation.

[0504] Furthermore, the insulators 222 and 224 may have a laminated structure of two or more layers. In this case, the laminated structure is not limited to that made of the same material, but may also be made of different materials. For example, an insulator similar to the insulator 224 may be provided below the insulator 222.

[0505] Metal oxide 230 consists of metal oxide 230a and metal oxide 230 on metal oxide 230a It has b and a metal oxide 230c on the metal oxide 230b. The presence of metal oxide 230a results in a structure formed below the metal oxide 230a. It is possible to suppress the diffusion of impurities from the material to the metal oxide 230b. Having a metal oxide 230c on the gen oxide 230b, above the metal oxide 230c The diffusion of impurities from the structure formed in the material to the metal oxide 230b can be suppressed. ru.

[0506] Furthermore, metal oxide 230 has a layered structure of multiple oxide layers with different atomic ratios of each metal atom. It is preferable to have. Specifically, in the metal oxide used in metal oxide 230a, The atomic ratio of element M in the constituent elements is the composition of the metal oxide used in metal oxide 230b. It is preferable that the atomic ratio of element M in the constituent elements is greater than that of the constituent elements. Also, when used in metal oxide 230a In the metal oxides, the atomic ratio of element M to In is used in metal oxide 230b. It is preferable that the atomic ratio of element M to In in the metal oxide is greater than that of element M. In the metal oxide used in metal oxide 230b, the atomic ratio of In to element M is, The atomic ratio of In to element M in the metal oxide used in metal oxide 230a is greater than It is preferable that it is a metal oxide. Also, metal oxide 230c is metal oxide 230a or metal oxide Metal oxides that can be used in 230b can be used.

[0507] Metal oxides 230a, 230b, and 230c are crystalline. It is preferable that, in particular, CAAC-OS (c-axis aligned crystal It is preferable to use a line oxide semiconductor. Crystalline oxides such as AC-OS have few impurities and defects (such as oxygen vacancies) and are highly crystalline. It has a highly dense structure. Therefore, metal acids are produced by the source electrode or drain electrode. This can suppress the abstraction of oxygen from compound 230b. This allows for heat treatment. Even in this case, the extraction of oxygen from the metal oxide 230b can be suppressed. Therefore, the 200A transistor is subjected to high temperatures during the manufacturing process (so-called thermal budget). It is stable against ).

[0508] Furthermore, the energy at the lower end of the conduction band of metal oxide 230a and metal oxide 230c is that of the metal acid It is preferable that the energy is higher than the energy at the lower end of the conduction band of ion 230b. In other words, The electron affinity of metal oxide 230a and metal oxide 230c is such that It is preferable that it is smaller than the electron affinity. In this case, metal oxide 230c is metal oxide 2 It is preferable to use a metal oxide that can be used in 30a. Specifically, metal oxide In the metal oxide used in material 230c, the atomic ratio of element M in the constituent elements is, The atomic ratio of element M in the constituent elements of the metal oxide used in 230b is greater than the atomic ratio of element M in the constituent elements. Preferred. Also, in the metal oxide used in metal oxide 230c, element M relative to In. The atomic ratio of element M to In in the metal oxide used in metal oxide 230b is It is preferable that the ratio is greater than the atomic ratio. Also, the metal oxide used in metal oxide 230b Furthermore, the atomic ratio of In to element M is in the metal oxide used in metal oxide 230c. Preferably, the atomic ratio of In to element M is greater than that of In.

[0509] Here, at the joint of metal oxide 230a, metal oxide 230b, and metal oxide 230c In this case, the energy level at the lower end of the conduction band changes smoothly. In other words, metal oxide 2 The lower end of the conduction band at the junction of 30a, metal oxide 230b, and metal oxide 230c Energy levels can also be described as continuously changing or continuously joining. For this purpose, the interface between metal oxide 230a and metal oxide 230b, and metal oxide 230b By lowering the defect level density of the mixed layer formed at the interface between the metal oxide 230c and the metal oxide 230c, stomach.

[0510] Specifically, metal oxide 230a and metal oxide 230b, and metal oxide 230b and metal oxide The defect level density of substance 230c is due to the presence of a common element other than oxygen (which is the main component). A low mixed layer can be formed. For example, if metal oxide 230b is In-Ga-Zn acid In the case of the oxide, metal oxide 230a and metal oxide 230c are In-Ga-Zn oxide Materials such as Ga-Zn oxide and gallium oxide may be used. In addition, metal oxide 230c may be used. A layered structure is also possible. For example, an In-Ga-Zn oxide and the In-Ga-Zn oxide A layered structure with the above Ga-Zn oxide, or with the In-Ga-Zn oxide and the In-Ga- A layered structure of gallium oxide on Zn oxide can be used. In other words, In-G A layered structure of α-Zn oxide and an in-free oxide is used as metal oxide 230c. It's okay to be there.

[0511] Specifically, as metal oxide 230a, In:Ga:Zn = 1:3:4 [atomic ratio], Alternatively, a metal oxide in an atomic ratio of 1:1:0.5 may be used. Also, metal oxide 230 Let b be In:Ga:Zn = 4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] A metal oxide can be used. Also, as metal oxide 230c, In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 You may use metal oxides with an atomic ratio of [number of atoms], or Ga:Zn=2:5 [number of atoms]. A specific example of a layered structure using metal oxide 230c is In:Ga:Zn=4: Layered structures of 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio], In:Ga:Zn Layered structures of =4:2:3 [atomic ratio] and Ga:Zn=2:5 [atomic ratio], In:Ga Examples include a layered structure of Zn=4:2:3 [atomic ratio] and gallium oxide.

[0512] In this case, the main carrier pathway is metal oxide 230b. Metal oxide 230a, and By configuring the metal oxide 230c as described above, the metal oxide 230a and metal oxide 23 Defect levels at the interface with 0b, and at the interface between metal oxide 230b and metal oxide 230c The density can be reduced. Therefore, the influence of interfacial scattering on carrier conduction is small. Therefore, the 200A transistor can achieve high on-current and high frequency characteristics. Furthermore, when metal oxide 230c is used in a layered structure, the above-mentioned metal oxide 230b and metal acid In addition to the effect of lowering the defect level density at the interface with the metal oxide 230c, It is expected that the constituent elements present will be suppressed from diffusing to the insulator 250 side. Specifically, the metal oxide 230c is used in a layered structure, with an In-free oxide layer on top of the layered structure. In order to position the object, it is possible to suppress the diffusion of In towards the insulator 250. 250 acts as a gate insulator, so when In diffuses, the characteristics of the transistor are affected. This results in a defect. Therefore, by using a layered structure for metal oxide 230c, a highly reliable surface can be achieved. This makes it possible to provide a display device.

[0513] It is preferable to use a metal oxide that functions as an oxide semiconductor for the metal oxide 230. For example, the metal oxide that forms the channel-forming region of metal oxide 230 is a band gap It is preferable to use a voltage of 2 eV or higher, preferably 2.5 eV or higher. By using metal oxides with a large band gap, the off-current of the transistor can be reduced. This allows for the provision of low-power display devices using such transistors. can.

[0514] On the metal oxide 230b, there is a conductor 242 that functions as a source electrode and a drain electrode. (Conductors 242a and 242b) are provided. The conductor 242 is aluminum nium, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tung Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, be Selected from lylium, indium, ruthenium, iridium, strontium, and lanthanum. A metal element, or an alloy containing the above-mentioned metal elements, or a combination of the above-mentioned metal elements It is preferable to use alloys such as tantalum nitride, titanium nitride, and tungsten. Titanium and aluminum nitrides, tantalum and aluminum nitrides, ruthenium oxide Um, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing [the specified substance]. Also, tantalum nitride, titanium nitride, titanium and [the specified substance] Nitrides containing luminium, nitrides containing tantalum and aluminum, ruthenium oxide, nitrides Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel. The material is a conductive material that is resistant to oxidation, or a material that maintains its conductivity even when it absorbs oxygen. preferable.

[0515] By providing the conductor 242 in contact with the metal oxide 230, the metal oxide 230 In the vicinity of the conductor 242, the oxygen concentration may decrease. Also, the metal oxide 230 Near the conductor 242, the metal contained in the conductor 242 and the components of the metal oxide 230 A metal compound layer containing may be formed. In such cases, the conductivity of the metal oxide 230 In the region near body 242, the carrier density increases, and this region becomes a low-resistance region.

[0516] Here, the region between the conductor 242a and the conductor 242b is superimposed on the opening of the insulator 280. This is formed. This causes the conductor 260 to self-regulate between the conductor 242a and the conductor 242b. They can be arranged harmoniously.

[0517] Insulator 250 functions as a gate insulator. Insulator 250 is made of metal oxide 230c It is preferable to place it in contact with the upper surface. The insulator 250 is silicon oxide, silicon oxide nitride silicon nitride oxide, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon Using silicon oxide, silicon oxide with added carbon and nitrogen, and porous silicon oxide This is possible. In particular, silicon oxide and silicon oxide-nitride are stable to heat. preferable.

[0518] Similar to the insulator 224, the concentration of impurities such as water or hydrogen in the insulator 250 is It is preferable that the amount is reduced. The film thickness of the insulator 250 shall be between 1 nm and 20 nm. It is preferable.

[0519] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. Preferably, it has the function of suppressing oxygen diffusion from the insulator 250 to the conductor 260. This suppresses the oxidation of the conductor 260 by oxygen contained in the insulator 250. can.

[0520] Furthermore, the metal oxide may function as part of the gate insulator. When silicon oxide or silicon oxide nitride is used for the insulator 250, the metal oxide It is preferable to use a metal oxide, which is a high-k material with a high dielectric constant. By making the insulator a laminated structure of insulator 250 and the metal oxide, the transistor 20 0A can be made into a transistor that is stable against heat and has a high dielectric constant. Therefore Therefore, while maintaining the physical thickness of the gate insulator, the gate potential applied during transistor operation This makes it possible to reduce the equivalent oxide film thickness of the insulator that functions as a gate insulator. This makes it possible to reduce the (EOT) level.

[0521] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, tan Selected from gusten, titanium, tantalum, nickel, germanium, or magnesium, etc. One or more metal oxides containing these types can be used. In particular, aluminum Aluminum oxide, an insulator containing oxides of one or both of hafnium, or aluminum oxide, oxide Hafnium, or an oxide containing aluminum and hafnium (hafnium aluminate) It is preferable to use the like.

[0522] Although the conductor 260 is shown as a two-layer structure in Figure 41, it may also be a single-layer structure or a three-layer structure or more. The above layered structure is also acceptable.

[0523] Conductor 260a contains the above-mentioned hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides. This conductive material has the function of suppressing the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an electrochemical material. Alternatively, oxygen (for example, at least oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of (i)

[0524] Furthermore, the conductor 260a has the function of suppressing oxygen diffusion, and is contained in the insulator 250. This prevents the oxidation of conductor 260b by oxygen, which reduces the conductivity of conductor 260b. This is possible. Examples of conductive materials that have the function of suppressing oxygen diffusion include, It is preferable to use tantalum, tantalum nitride, ruthenium, or ruthenium oxide.

[0525] Furthermore, the conductor 260b is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductive material 260 also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material can be used as the main component. In addition, the conductor 260b has a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may also be used.

[0526] Furthermore, as shown in Figures 41(A) and (C), if the metal oxide 230b overlaps with the conductor 242 In the region where there is no metal oxide, in other words, in the channel formation region of metal oxide 230, The sides of 30 are arranged to be covered with the conductor 260. This allows the first gate electrode The electric field of the conductor 260, which functions as such, can be easily applied to the side surface of the metal oxide 230. Therefore, the on-current of transistor 200A is increased, and the frequency of transistor 200A The wavenumber characteristics can be improved.

[0527] Insulator 254, like insulator 214, etc., can contain impurities such as water or hydrogen from the insulator 280 side. It has the function of a barrier insulating film that suppresses contamination of transistor 200A. This is preferable. For example, it is preferable that the insulator 254 has lower hydrogen permeability than the insulator 224. Furthermore, as shown in Figures 41(B) and (C), the insulator 254 is made of metal oxide 230 c side, top and side of conductor 242a, top and side of conductor 242b, metal oxide 23 It has a region that is in contact with the side surface of 0a, the side surface of the metal oxide 230b, and the upper surface of the insulator 224. This is preferable. With this configuration, the hydrogen contained in the insulator 280 becomes a conductor. 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 This can prevent penetration into the metal oxide 230 from the top or side of 4.

[0528] Furthermore, the insulator 254 allows for the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable that the insulator has a function to suppress (the above oxygen does not easily permeate). For example, insulator 2 It is preferable that 54 has lower oxygen permeability than insulator 280 or insulator 224.

[0529] The insulator 254 is preferably formed using a sputtering method. By depositing a film using the sputtering method in an oxygen-containing atmosphere, the insulator 224 Oxygen can be added near the region in contact with 254. This allows the oxygen to escape from that region. Oxygen can be supplied into the metal oxide 230 via the edge 224. Here, an insulator 254 has the function of suppressing the upward diffusion of oxygen, so that oxygen is contained within the metal oxide 230 This can suppress diffusion from the insulator 280. Also, the insulator 222 is downward By having a function to suppress the diffusion of oxygen to the substrate, oxygen does not spread from the metal oxide 230 to the substrate side. Dispersion can be suppressed. In this way, channel formation of the metal oxide 230 is achieved. Oxygen is supplied to the region. This reduces oxygen deficiency in metal oxide 230 and transient This can suppress the normalization of sta.

[0530] As the insulator 254, for example, an oxide of one or both of aluminum and hafnium is used. It is preferable to form a film containing an insulator. Note that the oxidation of one or both aluminum and hafnium As an insulator containing a substance, aluminum oxide, hafnium oxide, or aluminum and haf It is preferable to use an oxide containing nium (such as hafnium aluminate).

[0531] The insulator 254, which has barrier properties against hydrogen, protects the insulator 224, the insulator 250, and By covering the metal oxide 230, the insulator 280 is covered by the insulator 254, and the insulator 224 is covered by the metal It is separated from the oxide 230 and the insulator 250. As a result, transistor 200A Because it can suppress the intrusion of impurities such as hydrogen from the outside, the power of the 200A transistor This allows for improved aerodynamic characteristics and reliability.

[0532] The insulator 280 is connected to the insulator 224, the metal oxide 230, and the conductor via the insulator 254. It is provided on 242. For example, as the insulator 280, silicon oxide, silicon oxide nitride , nitride silicon oxide, fluorine-added silicon oxide, carbon-added silicon oxide, carbon It is preferable to have silicon oxide with added elements and nitrogen, or silicon oxide with voids, etc. In particular, silicon oxide and silicon oxide-nitride are preferred because they are ...

Claims

[Claim 1] It comprises a subject detection unit having an imaging device, a feature extraction unit, an estimation unit, and an information presentation unit having a display device. The subject detection unit has the function of acquiring information about part or all of the user's face. The feature extraction unit has the function of extracting facial features of the user from information about part or all of the user's face acquired by the subject detection unit. The estimation unit has the function of estimating information about the user from the facial features of the user extracted by the feature extraction unit. The information presentation unit is an electronic device having the function of presenting information to the user based on the information about the user estimated by the estimation unit, The display device has a first layer and a second layer, The first layer comprises a gate driver circuit and a source driver circuit, The second layer has a pixel array in which pixels are arranged in a matrix, The gate driver circuit and the source driver circuit each overlap with the pixel array, The gate driver circuit has a region that overlaps with the source driver circuit, In a plan view of the region, a dummy transistor is placed between one of the plurality of first transistors constituting the gate driver circuit and another of the plurality of first transistors. An electronic device in which, in a plan view of the region, the dummy transistor is positioned between one of the plurality of second transistors constituting the source driver circuit and another of the plurality of second transistors.

Images