Electronic components and their manufacturing methods

Abstract

The present invention provides an electronic component in which the fluid penetration pathway into the interior is blocked, and a method for manufacturing the same. [Solution] An electronic component and a method for manufacturing the same are provided. The electronic component includes a body comprising a plurality of stacked dielectric layers and a plurality of internal electrodes arranged with corresponding dielectric layers in between; a microbody disposed on the outer surface of the body and comprising electrode layers connected to some of the plurality of internal electrodes; and a sealing thin film. The microbody is defined by at least some of the dielectric layers, internal electrodes, and electrode layers and includes open micropores that open through the surface of the microbody; and the sealing thin film includes an internal sealing thin film that at least partially fills the interior of the open micropores and closes the entrances to the open micropores.

Description

Technical Field

[0001] The present invention relates to an electronic component and a method for manufacturing the same.

Background Art

[0002] Among electronic components, a multilayer ceramic capacitor (MLCC) is a chip-shaped capacitor that is mounted on a printed circuit board of various electronic products such as video devices such as liquid crystal display devices (LCDs), computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. Recently, as the components of electronic devices are miniaturized, the requirements for miniaturization and high capacitance of multilayer capacitors are increasing.

[0004] The multilayer capacitor includes a large number of dielectric layers, a large number of internal electrodes alternately arranged with the dielectric layers interposed therebetween, and external electrodes connected to the internal electrodes. The dielectric layer, the internal electrode, and the external electrode are preferably tightly bonded to each other, but in some cases, defects may occur. Such defects may form fluid penetration paths.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The problem to be solved by the present invention is to provide an electronic component in which the fluid penetration path into the interior is blocked.

[0006] Another problem to be solved by the present invention is to provide a method for manufacturing an electronic component in which the fluid penetration path into the interior is blocked.

[0007] The technical problems of the present invention are not limited to those mentioned above, and any other technical problems not mentioned can be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] An electronic component according to one embodiment for solving the above problems includes a main body including a plurality of stacked dielectric layers and a plurality of internal electrodes arranged with a corresponding dielectric layer in between; a microbody disposed on the outer surface of the main body and including an electrode layer connected to some of the plurality of internal electrodes; and a sealing thin film, wherein the microbody is defined by at least some of the dielectric layers, the internal electrodes, and the electrode layer and includes an open micropore that opens through the surface of the microbody; and the sealing thin film includes an internal sealing thin film that at least partially fills the inside of the open micropore and closes the entrance of the open micropore.

[0009] An electronic component according to another embodiment for solving the above problems includes a body comprising a plurality of internal electrodes arranged with a plurality of stacked dielectric layers and corresponding dielectric layers sandwiched between them, an electrode layer disposed on the body and arranged to be electrically connected to the corresponding internal electrodes, an external electrode comprising a plating layer disposed on the electrode layer, and an external sealing thin film disposed on the interface between the end of the electrode layer and the body.

[0010] A method for manufacturing an electronic component according to one embodiment for solving the above-mentioned other problems includes the steps of providing a body including a plurality of internal electrodes arranged with a plurality of stacked dielectric layers and corresponding dielectric layers sandwiched between them, and a microbody including an electrode layer arranged on the outer surface of the body and connected to a portion of the plurality of internal electrodes, forming a sealing thin film on the microbody by a vapor deposition process, and removing at least a portion of the sealing thin film.

[0011] Specific details of other embodiments are included in the detailed description and drawings. [Effects of the Invention]

[0012] According to one embodiment of the electronic product and its manufacturing method, it is possible to effectively block the penetration of fluid into the interior. Therefore, defects caused by fluid exposure of the internal components of the electronic product can be prevented.

[0013] The effects of the embodiments are not limited to those exemplified above, and a wider range of effects are included in this specification. [Brief explanation of the drawing]

[0014] [Figure 1] This is a perspective view illustrating an electronic component relating to one embodiment of the present invention. [Figure 2] Figure 1 is an exploded perspective view illustrating the electronic components. [Figure 3] Figure 1 is an exploded perspective view illustrating the main body of the electronic component shown. [Figure 4] This is a cross-sectional view taken along the line IV-IV' in Figure 1. [Figure 5] This is a partial cross-sectional view of a microstructure before the formation of a sealing thin film according to one embodiment. [Figure 6] This is a schematic diagram showing a microscopic body containing open micropores exposed to a fluid. [Figure 7] This is a schematic diagram showing a microscopic body containing closed micropores exposed to a fluid. [Figure 8] Figure 5 is a partial cross-sectional view showing a structure in which a sealing thin film is formed on a micro-body. [Figure 9] This is a schematic diagram showing a micro-body with a sealing thin film formed inside an open micropore, exposed to a fluid. [Figure 10] This is a cross-sectional view showing the process steps of a method for manufacturing an electronic component according to one embodiment. [Figure 11] This is a cross-sectional view showing the process steps of a method for manufacturing an electronic component according to one embodiment. [Figure 12] This is a schematic diagram showing the process of forming a sealing thin film for an electronic component according to one embodiment. [Figure 13]It is a cross-sectional view showing the process steps of a method for manufacturing an electronic component according to an embodiment. [Figure 14] It is a partial cross-sectional view for explaining the growth direction of the sealing thin film. [Figure 15] It is a cross-sectional view showing the process steps of a method for manufacturing an electronic component according to an embodiment. [Figure 16] It is a cross-sectional view showing the process steps of a method for manufacturing an electronic component according to an embodiment. [Figure 17] It is a cross-sectional view of the internal sealing thin film of an electronic component according to various embodiments. [Figure 18] It is a cross-sectional view showing a method of forming a coating layer in an open micropore by a wet method. [Figure 19] It is a cross-sectional view of an electronic component according to another embodiment.

Best Mode for Carrying Out the Invention

[0015] The advantages, features, and the method for achieving them of the present invention will become clear by referring to the embodiments described in detail later together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. Merely, these embodiments are provided to complete the disclosure of the present invention and to fully explain the scope of the invention to those with ordinary knowledge in the technical field to which the present invention belongs. The present invention is only defined by the scope of the claims. The same reference numerals throughout the specification indicate the same components.

[0016] An element or layer that is referred to as "on" another element or layer includes not only directly above another element or layer but also all cases where other layers or other elements are interposed therebetween. On the other hand, an element that is referred to as "directly on" indicates that there is no other element or layer interposed therebetween.

[0017] Spatially relative terms such as "below," "beneath," "lower," "above," and "upper" can be used to easily describe the correlation between one element or component and another element or component, as shown in the drawing. Spatially relative terms should be understood as terms that include the different orientations of elements in use or operation, in addition to the directions shown in the drawing. For example, when overturning elements shown in the drawing, an element described as "below" or "beneath" of another element may be placed "above" of that element. Therefore, the exemplary term "below" can include both the downward and upward directions. Elements can also be oriented in other directions, and thus spatially relative terms can be interpreted by orientation.

[0018] Although terms such as "first," "second," etc., are used to describe various elements, components, and / or sections, these elements, components, and / or sections are not limited by these terms. These terms are used solely to distinguish one element, component, or section from another. Therefore, the first element, first component, or first section referred to below may also be the second element, second component, or second section within the technical concept of the present invention.

[0019] Various embodiments will be described below with reference to the attached drawings.

[0020] Figure 1 is a perspective view illustrating an electronic component according to this embodiment; Figure 2 is an exploded perspective view illustrating the electronic component of Figure 1; Figure 3 is an exploded perspective view illustrating the body of the electronic component shown in Figure 1; and Figure 4 is a cross-sectional view taken along the line IV-IV' in Figure 1.

[0021] Referring to Figures 1 to 4, the electronic component 100 includes a first electrode and a second electrode, separated from each other, and a dielectric material interposed between them. There are multiple first electrodes and second electrodes, which can be stacked alternately. A dielectric material is interposed between each electrode. The multiple first electrodes, second electrodes, and dielectric material form a multilayer capacitor. The configuration of the electronic component will be described in detail below.

[0022] The electronic component 100 includes a main body 110, a first external electrode 161, and a second external electrode 162.

[0023] The body 110 can be, for example, a hexahedron. Specifically, the body 110 can include six faces M1, M2, F1, F2, C1, and C2, as shown in Figure 2. The first face M1 and the second face M2 face each other in the third direction T (or in the thickness direction of the body 110). When the electronic component 100 is mounted on a substrate, the first face M1 or the second face M2 may be the face that is mounted on the substrate (i.e., the mounting face). The third face F1 and the fourth face F2 face each other in the second direction W (or in the width direction of the body 110). The third face F1 and the fourth face F2 are connected to the first face M1 and the second face M2. The fifth face C1 and the sixth face C2 face each other in the first direction L (or in the length direction of the body 110). Faces 5C1 and 6C2 are connected to Face 1M1, Face 2M2, Face 3F1, and Face 4F2.

[0024] As shown in Figure 3, the main body 110 includes a number of dielectric layers 111, a number of first internal electrodes 121, and a number of second internal electrodes 122. Specifically, the number of dielectric layers 111 are stacked, and the number of first internal electrodes 121 and the number of second internal electrodes 122 are arranged alternately with the dielectric layers 111 in between.

[0025] In the sintered state, the numerous dielectric layers 111 may be so integrated that the boundaries between adjacent dielectric layers cannot be observed.

[0026] The dielectric layer 111 may include a ceramic material having a high dielectric constant. For example, the dielectric layer 111 may include, but is not limited to, barium titanate (BaTiO3) or strontium titanate (SrTiO3) powders. In other words, any material that can obtain sufficient capacitance can be used as the material for the dielectric layer 111. In addition to the ceramic powder, the dielectric layer 111 may optionally contain further ceramic additives, organic solvents, organic binders, plasticizers, binders, and dispersants. Examples of ceramic additives include transition metal oxides or carbides, rare earth elements, magnesium (Mg), or aluminum (Al), but the examples of ceramic additives are not limited to these.

[0027] The numerous first internal electrodes 121 and numerous second internal electrodes 122 overlap in the third direction T (or in the thickness direction of the main body 110), and the area of ​​overlapping area is related to the formation of the capacitance of the capacitor.

[0028] The first internal electrode 121 and the second internal electrode 122 may contain nickel (Ni). The first internal electrode 121 and the second internal electrode 122 are mainly composed of nickel and may also contain additives. For example, at least one substance selected from the group including Li, Na, and K can be used as an additive to reduce the formation of nickel oxide (NiO) and improve the conductivity of the internal electrodes 121 and 122. Also, at least one substance selected from the group including Sn, Cu, Ag, Pb, Pt, Rh, Ir, Ru, Os, In, Ga, Zn, Bi, and Pb can be used as an additive to improve the reliability of the internal electrodes 121 and 122. Furthermore, at least one substance selected from the group including Ba, Mg, Dy, and Ti can be used as an additive to make the interface composition of the internal electrodes 121 and 122 uniform.

[0029] As shown in Figure 4, a number of first internal electrodes 121 are exposed on the fifth surface C1 and electrically connected to the first external electrode 161. A number of second internal electrodes 122 are exposed on the sixth surface C2 and electrically connected to the second external electrode 162. When a voltage is applied to the first external electrode 161 and the second external electrode 162, charge can be accumulated between the first internal electrode 121 and the second internal electrode 122 that are facing each other.

[0030] The main body 110 may further include a lower cover layer 111L located beneath the lowest internal electrode among the numerous first internal electrodes 121 and numerous second internal electrodes 122. The main body 110 may further include an upper cover layer 111H located above the uppermost internal electrode among the numerous first internal electrodes 121 and numerous second internal electrodes 122. The lower cover layer 111L and the upper cover layer 111H may be sintered together with the numerous dielectric layers 111 to such an extent that the boundaries between adjacent layers are not discernible.

[0031] The lower cover layer 111L and the upper cover layer 111H can be formed by stacking a single dielectric layer or two or more dielectric layers in a third direction T (for example, in the thickness direction of the main body 110). The lower cover layer 111L and the upper cover layer 111H serve to prevent damage to the first internal electrode 121 and the second internal electrode 122 from physical / chemical stress. In addition, the thickness TL of the lower cover layer 111L and the thickness TH of the upper cover layer 111H can be formed to be the same, but are not limited to this, in order to eliminate mounting directionality. The lower cover layer 111L or the upper cover layer 111H can have the same material and configuration as the dielectric layer 111, but are not limited to this.

[0032] The shape and dimensions of the main body 110, the number of layers of dielectric layer 111, the number of layers of first internal electrode 121 / second internal electrode 122, and the thicknesses TL and TH of the lower / upper cover layers 111L and 111H may vary depending on the design and are not limited to those shown in the illustration.

[0033] The first external electrode 161 may include a first connection portion 161a, a first mounting portion 161b, and a first side portion 161c.

[0034] The first connection portion 161a is positioned on the fifth surface C1 of the main body 110 and is connected to a number of first internal electrodes 121 exposed on the fifth surface C1. The first connection portion 161a can cover the entire fifth surface C1 of the main body 110.

[0035] The first mounting section 161b can be extended from the first connecting section 161a to the first surface M1 and the second surface M2 of the main body 110. The first mounting section 161b can partially cover the first surface M1 and the second surface M2 of the main body 110.

[0036] The first side portion 161c can be extended from the first connection portion 161a to the third surface F1 and the fourth surface F2 of the main body 110. The first side portion 161c can partially cover the third surface F1 and the fourth surface F2 of the main body 110.

[0037] The first mounting portion 161b can be parallel to the plane formed by the first internal electrode 121, and the first side portion 161c can be perpendicular to the plane formed by the first internal electrode 121.

[0038] The first mounting portion 161b located on the first surface M1 of the main body 110 and the first mounting portion 161b located on the second surface M2 of the main body 110 can be symmetrical with respect to the third direction T with respect to the main body 110. For example, the length of the first mounting portion 161b located on the first surface M1 of the main body 110 in the first direction L (or second direction W) and the length of the first mounting portion 161b located on the second surface M2 of the main body 110 in the first direction L (or second direction W) can be the same.

[0039] Similarly, the first side portion 161c located on the third surface F1 of the main body 110 and the first side portion 161c located on the fourth surface F2 of the main body 110 can be symmetrical with respect to the second direction W with respect to the main body 110. That is, the length of the first side portion 161c located on the third surface F1 of the main body 110 in the first direction L (or third direction T) and the length of the first side portion 161c located on the fourth surface F2 of the main body 110 in the first direction L (or third direction T) can be the same.

[0040] Similar to the first external electrode 161, the second external electrode 162 may include a second connection portion 162a, a second mounting portion 162b, and a second side portion 162c.

[0041] The second connection portion 162a is positioned on the sixth surface C2 of the main body 110 and is connected to a number of second internal electrodes 122 exposed on the sixth surface C2. The second connection portion 162a can cover the entire sixth surface C2 of the main body 110.

[0042] The second mounting section 162b can be extended from the second connecting section 162a to the first surface M1 and the second surface M2 of the main body 110. The second mounting section 162b can partially cover the first surface M1 and the second surface M2 of the main body 110.

[0043] The second side portion 162c can be extended from the second connecting portion 162a to the third surface F1 and the fourth surface F2 of the main body 110. The second side portion 162c can partially cover the third surface F1 and the fourth surface F2 of the main body 110.

[0044] The second mounting portion 162b can be parallel to the plane formed by the second internal electrode 122, and the second side portion 162c can be perpendicular to the plane formed by the second internal electrode 122.

[0045] The second mounting portion 162b located on the first surface M1 of the main body 110 and the second mounting portion 162b located on the second surface M2 of the main body 110 can be symmetrical with respect to each other in the third direction T with respect to the main body 110. The second side portion 162c located on the third surface F1 of the main body 110 and the second side portion 162c located on the fourth surface F2 of the main body 110 can be symmetrical with respect to each other in the second direction W with respect to the main body 110.

[0046] As described above, the first mounting portion 161b / second mounting portion 162b formed on the first surface M1 of the main body 110 and the first mounting portion 161b / second mounting portion 162b formed on the second surface M2 of the main body 110 are symmetrical, and the thickness TL of the lower cover layer 111L and the thickness TH of the upper cover layer 111H can be made the same. In this way, when mounting the electronic component 100 on the substrate, the mounting direction can be eliminated. That is, the first surface M1 of the main body 110 can be mounted facing the substrate, and the second surface M2 of the main body 110 can be mounted facing the substrate.

[0047] One side of the main body 110 can be placed in the first internal space IS1, and the other side of the main body 110 can be placed in the second internal space IS2.

[0048] The first external electrode 161 defines the first internal space IS1. The first internal space IS1 is determined by the first connection portion 161a and the first mounting portion 161b and first side portion 161c which are bent from the first connection portion 161a. The space enclosed by the first connection portion 161a, the first mounting portion 161b and the first side portion 161c becomes the first internal space IS1. Specifically, the first connection portion 161a is rectangular, and the first mounting portion 161b / first side portion 161c can be bent perpendicularly from each side of the rectangular first connection portion 161a and extended toward the second external electrode 162.

[0049] The second external electrode 162 defines the second internal space IS2. The second internal space IS2 is determined by the second connection portion 162a and the second mounting portion 162b and second side portion 162c which are bent from the second connection portion 162a. The space enclosed by the second connection portion 162a, the second mounting portion 162b and the second side portion 162c becomes the second internal space IS2. Specifically, the second connection portion 162a is rectangular, and the second mounting portion 162b / second side portion 162c can be bent perpendicularly from each side of the rectangular second connection portion 162a and extended toward the first external electrode 161.

[0050] Furthermore, the first external electrode 161 and the second external electrode 162 can be symmetrical in shape with respect to the central part of the main body 110.

[0051] For example, the first mounting portion 161b of the first external electrode 161, which is located on the first surface M1 of the main body 110, and the second mounting portion 162b of the second external electrode 162, which is located on the first surface M1 of the main body 110, can be symmetrical in the first direction L with respect to the main body 110. Also, the first side portion 161c of the first external electrode 161, which is located on the third surface F1 of the main body 110, and the second side portion 162c of the second external electrode 162, which is located on the third surface F1 of the main body 110, can be symmetrical in the first direction L with respect to the main body 110. Furthermore, the first connection portion 161a of the first external electrode 161, which is located on the fifth surface C1 of the main body 110, and the second connection portion 162a of the second external electrode 162, which is located on the sixth surface C2 of the main body 110, can be symmetrical in the first direction L with respect to the main body 110.

[0052] The first and second external electrodes 161 and 162 completely cover the fifth surface C1 and the sixth surface C2 of the main body 110, but the first surface M1, the second surface M2, the third surface F1, and the fourth surface F2 of the main body 110 can be partially exposed.

[0053] The first external electrode 161 and the second external electrode 162 may each include an electrode layer and a plating layer that are stacked in order.

[0054] The electrode layer 131 of the first external electrode 161 can be positioned directly on the entire fifth surface C1 of the main body 110, or on parts of the first surface M1, second surface M2, third surface F1, and fourth surface F2 of the main body 110. The electrode layer 132 of the second external electrode 162 can be positioned directly on the entire sixth surface C2 of the main body 110, or on parts of the first surface M1, second surface M2, third surface F1, and fourth surface F2 of the main body 110. The electrode layer 131 of the first external electrode 161 and the electrode layer 132 of the second external electrode 162 can be formed from substantially the same material and structure. The electrode layers 131 and 132 may include, but are not limited to, conductive metals, such as copper (Cu), nickel, gold, silver, platinum, and palladium, or alloys thereof. The electrode layers 131 and 132 may further include glass as an auxiliary material. The conductive metal ensures chip sealing and electrical connectivity with the chip, while the glass fills any gaps created during the firing shrinkage of the conductive metal and simultaneously provides a bonding force between the first external electrode 161 and the main body 110.

[0055] A plating layer 151 is placed on the electrode layer 131 of the first external electrode 161, and a plating layer 152 is placed on the electrode layer 132 of the second external electrode 162. The plating layers 151 and 152 can be formed by electroplating based on the electrode layers 131 and 132 below them. As a result, the plating layers 151 and 152 can have substantially the same pattern shape as the electrode layers 131 and 132 below them.

[0056] The plating layer 151 of the first external electrode 161 and the plating layer 152 of the second external electrode 162 can be formed from substantially the same material and structure. The plating layers 151 and 152 may include a nickel (Ni) plating layer and / or a tin (Sn) plating layer. The plating layers 151 and 152 may include a nickel / tin alloy. In some embodiments, the plating layers 151 and 152 may include two or more layers. For example, the plating layers 151 and 152 may include a first plating layer formed on the electrode layers 131 and 132 and containing nickel, and a second plating layer formed on the first plating layer and containing tin.

[0057] The electronic component 100 may include sealing thin films ST:ST_I, ST_O. The sealing thin film ST is placed on or inside the structure consisting of the main body 110 and the electrode layer 131, and serves to prevent fluid from penetrating into the interior. For the sake of explanation, if we define the structure in which the electrode layers 131, 132 are formed on the main body 110, in other words, the remaining structure of the electronic component 100 excluding the plating layers 151, 152, as a microstructure, then the sealing thin film ST is placed on and / or inside the microstructure. The sealing thin film ST may include an external sealing thin film ST_O placed on the surface of the microstructure and an internal sealing thin film ST_I placed inside the microstructure.

[0058] The external sealing thin film ST_O can be placed on the edges of the electrode layers 131 and 132, which are positioned on the main body 110, and on the stepped portion STP formed by the main body 110. The external sealing thin film ST_O can be placed on the interface between the edges of the electrode layers 131 and 132 and the main body 110, and can cover the interface. The external sealing thin film ST_O can be placed on the first surface M1, third surface F1, second surface M2, and fourth surface F2 of the microstructure where the edges of the electrode layers 131 and 132 are located, respectively. The external sealing thin film ST_O can be placed continuously to completely surround the interface between the edges of the electrode layers 131 and 132 and the main body 110, but is not limited to this, and may also be placed intermittently. The thickness of the external sealing thin film ST_O (the maximum height measured perpendicularly from the interface with the electrode layer 131 or the main body 110) can be 20 nm to 200 nm, but is not limited to this.

[0059] If the microstructure contains micropores OP:OP_H and OP_C within which the microstructure is positioned, then the internal sealing thin film ST_I can be positioned inside the micropores OP. The sealing thin film ST and the micropores OP of the microstructure will be described in more detail below.

[0060] Figure 5 is a partial cross-sectional view of a microstructure before the formation of a sealing thin film according to one embodiment. For the sake of explanation, the size and arrangement of the micropores OP are shown in a slightly exaggerated manner. Furthermore, although Figure 5 shows the portion where the electrode layer 131 of the first external electrode 161 is located, it is obvious that the illustrated shape can also be applied as an example of the portion where the electrode layer 132 of the second external electrode 162 is located, or other portions.

[0061] Referring to Figures 4 and 5, the microstructure of the electronic component 100 may contain micropores OP internally. Micropores OP can be defined as predetermined spaces formed by adjacent materials or by a lack of complete bonding. The materials constituting the microstructure are separated from each other with respect to the micropores OP. That is, micropores OP can form discontinuous sections of material.

[0062] Micropores (OPs) are empty spaces not occupied by solid material that can provide spaces through which fluids can reside or move. For example, some micropores (OPs) are large enough to provide spaces through which liquids such as plating solutions can pass. Other micropores (OPs) are relatively small and therefore cannot pass liquids but can pass gases.

[0063] Micropores (OPs) can be formed during the manufacturing process of microstructures. Micropores (OPs) may be formed intentionally for a specific purpose, but they can also be formed unintentionally. For example, in manufacturing processes such as sintering and firing, although the intention is for the material constituting a layer or electrode to completely fill the space and solidify or harden, various variables in the process conditions or limitations of the adopted process conditions may result in defects where the constituent material does not completely fill the space, and such defects may be located inside the electronic component 100 in the form of micropores (OPs). In addition, micropores (OPs) can also be formed by cracks that occur during the manufacturing or handling process of microstructures, or by cracks caused by external impacts.

[0064] Micropores (OPs) can have a variety of shapes. For example, micropores can have shapes such as gaps, tunnels, pores, or sediments with uniform or non-uniform widths, and can also have floating forms between interfaces. They can also have island shapes such as spheres, ellipses, or amorphous forms, and can have straight lines, curves, or connected line shapes like branches or roads. Micropores can be observed through FE-SEM images, etc.

[0065] Micropores (OP) can be positioned at various locations within a microstructure.

[0066] For example, micropores OP can be placed inside specific components, such as the dielectric layer 111 or internal electrodes 121 and 122 of the main body 110, or inside the electrode layer 131. Specifically, components such as the dielectric layer 111, internal electrodes 121 and 122, and electrode layer 131 can be formed by providing them in paste form and then solidifying or hardening them by sintering and / or firing. After sintering and / or firing, the paste is mostly bonded together and integrated, but in some cases, bonding may not occur in some areas, or bonding may be re-separated after it has been bonded. Such unbonded areas can form micropores OP.

[0067] As another example, micropores OP may be located at interfaces between dissimilar materials, such as the interface between the dielectric layer 111 and the internal electrodes 121 and 122, the interface between the dielectric layer 111 and the electrode layer 131, and the interface between the internal electrode 121 and the electrode layer 131. Micropores OP may also be located at interfaces between similar materials, such as the interface between each unit dielectric layer 111 derived from the ceramic sheet. In the manufacturing process of microstructures, different materials solidify in close contact, but at most interfaces, the materials bond together and do not create gaps between them. However, if the materials cannot bond together at some interfaces, in other words, if a particular layer floats away from other layers, that region can form micropores OP.

[0068] The micropores OP of the electronic component 100 may be located at one or more positions selected from the various positions listed above. Furthermore, a single micropore OP with connected spaces may span two or more of the positions listed above. For example, some micropores OP can extend from the interface between the dielectric layer 111 and the internal electrodes 121, 122, through the dielectric layer 111 to the interface between the dielectric layer 111 and the electrode layer 131, and further through the interior of the electrode layer 131 to open onto the outer surface of the electrode layer 131.

[0069] Micropores OP can be classified according to whether or not they have openings on the surface of the microbody. Here, the surface of the microbody includes the surface of the electrode layer 131 and the surface of the main body 110, but in the region where the surface of the main body 110 is covered by the electrode layer 131, the surface of the electrode layer 131 becomes the surface of the microbody.

[0070] A micropore OP can include open-type micropores OP_H, where a spatially connected micropore OP opens onto the surface of a microstructure, and closed-type micropores OP_C, where a spatially connected micropore OP does not open through the surface of a microstructure, and the entire space is closed. Here, the distinction between closed and open types is based on the micropore OP itself as defined by the microstructure. That is, a micropore OP is defined by at least some of the constituent materials of the main body 110, such as the dielectric layer 111 and internal electrodes 121 and 122, and the constituent materials of the electrode layer 131. For example, if a micropore OP made of materials such as the dielectric layer 111, internal electrodes 121 and 122, and electrode layer 131 opens on the surface of the main body 110 or electrode layer 131, even if the opening is blocked by a thin film or coating material, the micropore OP itself corresponds to a surface opening EN, and is therefore called an open-type micropore OP.

[0071] Figure 6 is a schematic diagram showing a microstructure containing open micropores exposed to a fluid, and Figure 7 is a schematic diagram showing a microstructure containing closed micropores exposed to a fluid.

[0072] Referring to Figures 6 and 7, intermediate structures (e.g., microstructures) of the electronic component 100 during the manufacturing process, as well as the surface of the finished electronic component 100, may occasionally be exposed to fluids. For example, the plating layer 151 of the electronic component 100 can be formed by an electroplating method in which an electrode layer 131 is formed on the main body 110 and then supported in a plating solution, although this is not limited to the electroplating method. In this case, the microstructures, which are intermediate structures of the electronic component 100, may be exposed to the liquid state of the plating solution. In addition to cases where they are actively supported in a liquid, the electronic component 100 and its microstructures may also be exposed to moisture in the atmosphere or other gases.

[0073] In the case of a closed micropore OP_C, as shown in Figure 7, fluid penetration into the interior of the closed micropore OP_C can be basically prevented because it is not spatially connected to the surface of the microstructure. On the other hand, in the case of an open micropore OP_H, as shown in Figure 6, there is room for fluid to penetrate into the interior of the open micropore OP_H due to the opening EN on the surface. Regardless of the circumstances, once fluid enters the interior of the micropore OP, it may penetrate along the extension direction of the micropore OP. The penetrated fluid can come into contact with the dielectric layer 111, internal electrodes 121, 122, and / or electrode layer 131 surrounding the micropore OP, and may affect the contacted components. For example, if the penetrating fluid is a plating solution, it may undergo an electrochemical reaction with the internal electrodes 121, 122 or the electrode layer 131, potentially changing the properties of the electrodes. In addition, by-products such as hydrogen gas generated by the reaction may cause volume expansion and induce cracks inside the microstructure. Furthermore, the permeating fluid may react with the dielectric, potentially lowering its dielectric constant or generating by-products. Thus, when a fluid comes into contact with a component inside a microstructure, defects such as a decrease in the properties of the electronic component 100 (e.g., break-down voltage) or crack formation may occur. Such defects can occur not only due to the plating solution but also due to moisture (e.g., water vapor or humidity) or other gases that permeate into the micropores OP.

[0074] The possibility of fluid penetration through such open micropores OP_H can be effectively blocked by filling the inside of the open micropores OP_H with a sealing thin film ST to close the fluid movement path.

[0075] Figure 8 is a partial cross-sectional view showing the structure in which a sealing thin film is formed on the microstructure shown in Figure 5, and Figure 9 is a schematic diagram showing the state in which the microstructure with a sealing thin film formed inside an open micropore is exposed to fluid.

[0076] Referring to Figure 8, the electronic component 100 may include an internal sealing thin film ST_I and / or an external sealing thin film ST_O. While Figure 8 shows an example where both the internal and external sealing thin films ST_I and ST_O are formed, the sealing thin film ST may also consist only of the internal sealing thin film ST_I or only of the external sealing thin film ST_O. The presence or absence of the internal sealing thin film ST_I in the electronic component 100 after the sealing thin film ST formation process can be determined by whether the microstructure contains open micropores OP_H. The presence and thickness of the external sealing thin film ST_O can be determined by the deposition thickness of the sealing thin film ST_ and the variables of the surface removal process.

[0077] The internal sealing thin film ST_I is placed inside the open micropore OP_H of the micropore OP. The internal sealing thin film ST_I fills at least partially the internal space of the open micropore OP_H. For example, the internal sealing thin film ST_I can completely fill the internal space of the open micropore OP_H. When the internal sealing thin film ST_I completely fills the internal space of the open micropore OP_H, the empty space itself disappears, and thus the fluid movement path can be essentially blocked.

[0078] The internal sealing thin film ST_I can also fill only a portion of the internal space of the open micropore OP_H. As shown in Figure 9, even if the internal sealing thin film ST_I does not fill the entire internal space of the open micropore OP_H and defines the void space RM, if the entrance to the open micropore OP_H adjacent to the surface is closed to the extent that fluid movement is impossible, it becomes substantially the same as a closed micropore OP_C in terms of fluid movement pathways, thus blocking fluid from entering the interior of the open micropore OP_H from the surface.

[0079] The external sealing thin film ST_O can be placed on the interface between the end of the electrode layer 131 and the main body 110. The external sealing thin film ST_O can function to seal the interface between the end of the electrode layer 131 and the main body 110, essentially blocking the fluid movement passage. If the open micropore OP_H extends to the interface between the main body 110 and the electrode layer 131, the sealing thin film ST can grow into the interior of the open micropore OP_H. In this case, the external sealing thin film ST_O and the internal sealing thin film ST_I may also have an interconnected structure.

[0080] The sealing thin film ST is deposited onto the surrounding components (dielectric layer 111, internal electrodes 121, 122, electrode layer 131) by a vapor deposition process, and can be bonded to the surrounding components at least partially. This bond may include a chemical bond. Such a chemical bond can provide a stronger bond to the surrounding components than an organic coating layer formed through a coating and curing process.

[0081] The sealing thin film ST can be crystalline. Specifically, the sealing thin film ST can be fully or at least partially crystallized through a vapor deposition process. The crystallized sealing thin film ST forms a mechanically stronger film than the organic coating layer formed through the coating and curing process, and has superior sealing functionality, thus effectively blocking fluid penetration.

[0082] The sealing thin film ST may contain a water-repellent substance. The contact angle of the sealing thin film ST can be, for example, 90° to 110°, although this is not limited thereto. When the sealing thin film ST becomes water-repellent, it can more effectively prevent fluids such as plating solutions and moisture from penetrating into the interior of the microstructure.

[0083] In one embodiment, the sealing thin film ST may contain fluorine. Specifically, the sealing thin film ST may contain a fluorine-based organic substance such as CxFy. The average thickness of the sealing thin film ST may vary depending on its location, but the maximum thickness can be adjusted within the range of 20 nm to 200 nm.

[0084] The sealing thin film ST will be explained in more detail below, while describing the manufacturing method of an example electronic component 100.

[0085] Figures 10, 11, 13, 15, and 16 are cross-sectional views showing the process steps of a manufacturing method for an electronic component according to one embodiment.

[0086] Referring to Figure 10, first, a microstructure including a main body 110 and an electrode layer 131 is provided. The microstructure can be manufactured by forming the main body 110 and then forming the electrode layer 131 on the main body 110.

[0087] The main body 110 can be formed by various known methods. For example, a number of ceramic green sheets can be prepared, and a conductive paste can be applied to each ceramic green sheet using a printing method such as screen printing or gravure printing. Subsequently, the number of ceramic green sheets can be stacked and pressed in the stacking direction to press the stacked ceramic green sheets and the conductive paste for the internal electrodes 121 and 122 together. Next, the stacked material that has been pressed together can be cut into sections corresponding to the main body 110 of a single multilayer capacitor to complete the unsintered main body. Subsequently, the main body can be heat-treated to burn off the binder and fired in a reducing atmosphere to obtain the sintered and / or fired main body 110.

[0088] Next, an electrode layer 131 is formed on the main body 110. The electrode layer 131 can be formed by applying a conductive paste or conductive epoxy resin containing conductive material powder, such as at least one of copper (Cu), nickel, gold, silver, platinum, and palladium or an alloy thereof, and glass powder onto the main body 110, and then firing it by high-temperature heat treatment to impart electrical properties.

[0089] As described above, the micro-bodies after sintering and / or firing of the main body 110 and the electrode layer 131 may contain micropores OP internally. When manufacturing multiple micro-bodies, some micro-bodies may contain micropores OP, while others may not. Some micro-bodies containing micropores OP may contain only closed micropores OP_C without open micropores OP_H, some other micro-bodies may contain only open micropores OP_H without closed micropores OP_C, and the remaining micro-bodies may contain both open micropores OP_H and closed micropores OP_C.

[0090] In the case of a microstructure that has no micropores OP, or contains only closed micropores OP_C without open micropores OP_H, even if it is supported in the plating solution during the subsequent plating process, penetration of the plating solution and intrusion of the microstructure into the interior will not occur, and therefore the process of forming a sealing thin film ST to prevent fluid intrusion may be unnecessary. On the other hand, in the case of a microstructure that contains open micropores OP_H, it is preferable to employ the process of forming a sealing thin film ST to prevent fluid intrusion into the interior.

[0091] If it is possible to determine whether or not a microstructure contains open micropores (OP_H) through an inspection process after manufacturing, it would be efficient to select only the microstructures containing open micropores (OP_H) and then proceed with the sealing thin film (ST) formation process. However, because microstructures are extremely small, inspecting for the presence or absence of open micropores (OP_H) is not easy, and the process can be costly. Furthermore, even if microstructures containing open micropores (OP_H) are separated, selectively selecting them from multiple microstructures may also be inefficient from a process perspective. Conversely, by performing the sealing thin film (ST) formation process on all manufactured microstructures without inspection and selection processes for the presence or absence of open micropores (OP_H), the overall defect rate can be reduced, and the efficiency of the process can be improved. When a sealing thin film ST is formed on a microbody without open micropores OP_H, only an external sealing thin film ST_O is formed without an internal sealing thin film ST_I. However, the external sealing thin film ST_O not only serves in the plating process but also prevents fluid inflow between the main body 110 and the electrode layer 131 in the completed electronic component 100. Therefore, without any other side effects, the reliability of the electronic component 100 can be enhanced.

[0092] From the above viewpoint, a method for manufacturing an electronic component 100 according to one embodiment may include a sealing thin film ST_ formation step that is performed on the sintered microbody without an inspection step for the presence or absence of open micropores OP_H.

[0093] Referring to Figure 11, the sealing thin film ST formation process can be carried out by vapor deposition processes such as CVD, PECVD (or plasma deposition apparatus), PVD, and ALD. To explain the process using PECVD as an example, first, a microstructure is placed inside the PECVD apparatus. As the source gas, a CxFy gas such as C3F6 can be used. When plasma is generated inside the PECVD apparatus and the deposition process is carried out, the CxFy material can be deposited on the surface of the microstructure.

[0094] The thickness of the sealing thin film ST can be related to the deposition direction. Generally, if the deposition surface faces the electric field direction of the showerhead and plasma generator of the PECVD apparatus, the sealing thin film ST can be deposited more thickly. The microstructure has a rectangular parallelepiped shape, but for example, if the second surface M2 faces the showerhead of the PECVD apparatus and the opposite surface, the first surface M1, faces the bottom, a sealing thin film ST of sufficient thickness will be deposited on the second surface M2 facing the showerhead, while the third to sixth surfaces F1, F2, C1, and C2, which are perpendicular to the second surface M2, may form a sealing thin film ST of smaller thickness. If the first surface M1 is in contact with a component such as the support base or mounting part of the PECVD apparatus, the sealing thin film ST may not be formed on the first surface M1 at all.

[0095] For stable sealing of open micropores OP_H, it is preferable to deposit a film of uniform thickness on all surfaces of the microbody, even if it is unknown whether the open micropores OP_H will open on a particular surface of the microbody. As one method for such uniform film deposition, a method can be adopted in which the deposition process is performed while changing the position of each surface, without fixing the surface of the microbody facing the showerhead or the like.

[0096] An exemplary method for changing the surface to be deposited is shown in Figure 12. Figure 12 is a schematic diagram showing the sealing thin film formation process for an electronic component according to one embodiment. Figure 12 illustrates a rotary deposition process in which the deposition process is carried out while rotating a large number of micro-objects inside a barrel-type PECVD apparatus 200. As shown in Figure 12, when the deposition process is carried out while arranging the micro-objects inside the barrel and rotating the barrel, each surface of the micro-object rotates regularly or randomly, so that deposition can be carried out on all surfaces of the micro-objects in a generally uniform manner.

[0097] Referring to Figure 13, within the PECVD apparatus, the deposition material CxFy can be deposited and bonded onto a microstructure, and then grow in the thickness direction to form a sealing thin film ST_W. Visually, the sealing thin film ST_W is formed on the entire surface of the microstructure. That is, the sealing thin film ST_W can be formed on the exposed portion of the electrode layer 131 that is not covered by the electrode layer 131 of the body 110. The sealing thin film ST_W can be formed to cover not only the surface (outer surface) of the exposed dielectric layer 111 of the body 110, but also the entire surface (outer surface) of the exposed electrode layer 131. A step portion STP corresponding to the thickness of the electrode layer 131 is defined between the edge of the electrode layer 131 and the body 110, and the sealing thin film ST_W can be formed conformally along the step portion STP.

[0098] The sealing thin film ST_W can have a uniform thickness across the entire surface of the microstructure. The thickness of the deposited sealing thin film ST_W can be adjusted by controlling the process time and conditions. The average thickness of the sealing thin film ST_W deposited on the microstructure can be determined within a range that is sufficient to adequately close the entrances of the open micropores OP_H. The thickness of the sealing thin film ST_W that satisfies the above conditions may vary depending on the size of the open micropores OP_H, but experimental results confirmed on numerous microstructures formed under general process conditions showed that when the average thickness of the sealing thin film ST_W was set in the range of 20 nm to 200 nm, the degradation of electronic components 100 due to fluid penetration was significantly reduced.

[0099] Figure 14 is a partial cross-sectional view illustrating the growth direction of the sealing thin film. Referring to Figure 14, the microstructure is exposed to the vapor-deposited material in the PECVD deposition apparatus. When the vapor-deposited material comes into contact with the surface of the microstructure, it can bond to the surface of the microstructure. The vapor-deposited material in the gas phase can contact and bond to the outer surface of the microstructure exposed to the outside. In addition, the vapor-deposited material in the gas phase can penetrate and enter the interior of the open micropores OP_H, and can therefore contact and bond to the inner walls of the open micropores OP_H.

[0100] As the deposition process continues, the vapor-deposited material can come into contact with and bond to the deposition material already bonded to the microstructure. Through this process, the sealing thin film ST_ is grown. The main growth direction of the sealing thin film ST_ can be generally perpendicular to the deposition surface, as shown in Figure 14.

[0101] On the outer surface of the microstructure, the sealing thin film ST_W grows outward. Since there are no structures on the outer surface of the microstructure that hinder growth, the sealing thin film ST_W can grow to a thickness that is approximately corresponding to a predetermined thickness.

[0102] In the case of an open micropore OP_H, the sealing thin film ST_W grows vertically from the inner wall. The sealing thin film ST_W can grow from the entire inner circumference of the inner wall of the open micropore OP_H toward the center.

[0103] As the sealing thin film ST_W grows inside the open micropore OP_H, the empty space RM within the open micropore OP_H decreases. As long as empty space RM remains, even if its size decreases, the vapor-deposited material can communicate with the inside and outside of the open micropore OP_H through this space. Therefore, additional film deposition is possible even in the inner space of the region where film deposition has occurred.

[0104] As the sealing thin film ST_W grows further inside the open micropore OP_H, it can come into contact with the opposing sealing thin film ST_ growing. The conditions under which the sealing thin films ST_W growing in different directions from the inner wall of the open micropore OP_H can come into contact with each other during the deposition process are related to the set film thickness (thickness relative to the outer surface) and the minimum inner diameter of the open micropore OP_H. For example, assuming that the film deposition rate on the outer surface of the microstructure and inside the open micropore OP_H are the same, the sealing thin films ST_W growing in different directions on the inner wall of the micropore OP can come into contact with each other if the inner diameter of the open micropore OP_H is less than or equal to half of the set film thickness. If the film deposition rate inside the open micropore OP_H is, on average, half that of the outer surface, then the inner diameter of the open micropore OP_H being less than or equal to the set film thickness is a necessary condition for the sealing thin films ST_W to come into contact in the center inside the open micropore OP_H. In other words, the thickness of the sealing thin film ST_W can be set to a level that allows the open micropores OP_H to be closed through the minimum number of deposition steps, taking into consideration the size of the open micropores OP_H and the deposition rate within them.

[0105] The sealing thin films ST_W that are in contact with each other can bond together at the junction. When the opposing sealing thin films ST_W grow evenly and completely bond together, the space in that region can be closed. Therefore, even vapor-deposited material cannot enter the inside of the closed region thereafter, and no additional film deposition occurs inside it. If an open space RM remains inside the closed region at the time of closure, the open space RM inside can remain even if the subsequent deposition process continues. On the other hand, if an open space RM remains outside the closed region at the time of closure, connected to the opening of an open micropore OP_H, film deposition can continue unless further entrance closure is performed.

[0106] Referring to Figure 15, the sealing thin film ST_W formation process is followed by a sealing thin film ST_W removal process. The sealing thin film ST_W removal process can be a process of removing the sealing thin film ST_W at least partially. The sealing thin film ST_W removal process is performed to remove the sealing thin film ST_W that is placed on the electrode layer 131. A plating layer 151 is formed on the electrode layer 131, but if the electrode layer 131 is covered with the sealing thin film ST_W, the plating process will not proceed smoothly. In addition, if the sealing thin film ST_W remains on the electrode layer 131, the electrical resistance between the plating layer 151 placed on it and the electrode layer 131 may increase. Therefore, by removing the sealing thin film ST_W covering the electrode layer 131 through this process, the subsequent plating process can be made smoother and the increase in electrical resistance between the electrode layer 131 and the plating layer 151 can be prevented.

[0107] The sealing thin film ST_W removal process is carried out under conditions that leave the sealing thin film ST_W formed inside the open micropores OP_H. If the sealing thin film ST_W formed inside the open micropores OP_H is also removed, it will not be possible to prevent the penetration of the plating solution in the subsequent plating process. Therefore, it is preferable to select a removal process that removes the sealing thin film ST_W formed on the outer surface of the microstructure while simultaneously leaving the sealing thin film ST_W formed inside the open micropores OP_H.

[0108] Dry polishing is an example of a removal process for sealing thin film ST_W that satisfies the above conditions. Examples of dry polishing include mechanical (or physical) polishing. Mechanical polishing can be carried out by impacting abrasive particles ABR with a microstructure on which the sealing thin film ST_W is formed, thereby physically separating the sealing thin film ST_W.

[0109] The mechanical polishing process can be carried out in a barrel. Specifically, a large number of micro-objects with a sealing thin film ST_ formed on them are placed inside the barrel, and the barrel is rotated to rotate the micro-objects while abrasive particles ABR (or abrasive material) are struck against them. In this barrel polishing method, not only is uniform polishing of all surfaces of the micro-objects possible, but polishing of a large number of micro-objects can be performed simultaneously, thus improving process efficiency. In addition to barrel polishing, various mechanical polishing processes known in the industry, such as sandblasting, can be applied for the partial removal of the sealing thin film ST_W.

[0110] Abrasive particles (ABRs) can consist of inorganic materials such as sand, glass, and metal, or resins such as silicone, but are not limited to these materials. Various materials used in mechanical polishing can be used as abrasive particles (ABRs).

[0111] The shape of the abrasive particles (ABR) can be spherical, elliptical, etc., but is not limited to these shapes; various shapes, such as amorphous materials, can be applied as the shape of the abrasive particles (ABR).

[0112] The size of the abrasive particles ABR is not limited to this, but can be 1 mm or less. In some embodiments, the diameter of the abrasive particles ABR can be in the range of 0.5 mm to 0.8 mm. For example, abrasive particles ABR with an average diameter of 0.7 mm or 0.6 mm can be used in a mechanical polishing process.

[0113] The polishing conditions, including the polishing time, can be set to a condition in which the sealing thin film ST_W formed on the metal layer is completely removed and the electrode layer 131 is exposed to the outside.

[0114] Figure 16 is a cross-sectional view of a microstructure after the partial removal process of the sealing thin film has been completed.

[0115] Referring to Figure 16, most of the sealing thin film formed on the outer surface of the microstructure is removed through the sealing thin film removal process, exposing the outer surface of the microstructure. The sealing thin film formed inside the open micropore OP_H is not directly struck by the polishing particles ABR and therefore remains without being removed. The sealing thin film remaining inside the open micropore OP_H becomes the internal sealing thin film ST_I described above.

[0116] On the other hand, in the stepped portion STP between the edge of the electrode layer 131 and the main body 110, the side surface of the electrode layer 131 can act as a shadow for the abrasive particles ABR. Also, because the abrasive particles ABR have a predetermined size, the inner corner portion of the stepped portion STP, which has a relatively narrow width, may not be exposed to physical impact by the abrasive particles ABR. As a result, the sealing thin film placed on the interface between the edge of the electrode layer 131 and the main body 110 is not removed despite mechanical polishing, and at least a portion of it can remain. The sealing thin film ST_ remaining on the interface between the edge of the electrode layer 131 and the main body 110 becomes the external sealing thin film ST_O described above. The maximum thickness of the external sealing thin film ST_O can be substantially the same as the formation thickness of the sealing thin film ST_W.

[0117] After the sealing thin film removal process, a plating layer 151 is formed on the electrode layer 131 to form an electronic component 100 as shown in Figure 4. The plating layer 151 can be formed in a plating process in which micro-body particles are supported in a plating solution. Since the sealing thin film on the outer surface of the electrode layer 131 is removed through the sealing thin film removal process, and the outer surface of the electrode layer 131 is exposed, the formation of the plating layer 151 can be carried out smoothly. In addition, since the open micropores OP_H of the micro-body are closed by the internal sealing thin film ST_I, the entry of the plating solution into the interior of the micro-body through the open micropores OP_H can be blocked. Furthermore, since an external sealing thin film ST_O is formed on the interface between the end of the electrode layer 131 and the main body 110, the internal penetration of the plating solution through the interface can be basically prevented.

[0118] The internal sealing thin film ST_I described above can be placed inside the open micropore OP_H in various forms depending on the shape and size of the open micropore OP_H, the process conditions during sealing thin film formation, etc. Several exemplary forms of the internal sealing thin film ST_I are shown in Figure 17.

[0119] Figure 17 is a cross-sectional view of an internal sealing thin film of an electronic component according to various embodiments.

[0120] Figure 17(a) illustrates a configuration in which the interior of the open micropore OP_H is completely filled with an internal sealing thin film ST_I. When the deposited material spreads uniformly inside the open micropore OP_H during the sealing thin film ST_ formation process, and growth proceeds sequentially from the inside, it can be formed in the configuration shown in Figure 17(a). In this way, when the interior of the open micropore OP_H is completely filled with the internal sealing thin film ST_I, the internal sealing thin film ST_I can have high mechanical strength.

[0121] Figure 17(b) illustrates a case where a certain section from the opening EN on the surface of the open micropore OP_H is completely filled by the internal sealing thin film ST_I, defining a closed region, but an empty space RM remains inside the closed point. If the entrance is closed before the deposited material completely fills the internal space of the open micropore OP_H, an internal sealing thin film ST_I in the form shown in Figure 17(b) can be formed.

[0122] Figure 17(c) illustrates a case where two or more closed regions are formed, leaving two or more mutually separated empty spaces RM within the open micropore OP_H. When primary closure is performed at a relatively deep position, followed by secondary and tertiary closures at even shallower positions, an internal sealing thin film ST_I with the form shown in Figure 17(c) can be formed.

[0123] As shown in Figure 17(a), when the interior of the open micropore OP_H is completely filled with the internal sealing thin film ST_I, and also when a void RM is formed inside the open micropore OP_H as shown in Figures 17(b) and 17(c), the inlet of the open micropore OP_H is closed, thus preventing the penetration of fluids such as plating solutions. Furthermore, the voids shown in Figures 17(b) and 17(c), together with the closed micropore OP_C, can play a role in mitigating stress on the electronic component 100 caused by external impacts or expansion of the material.

[0124] The above-described embodiment utilizes vapor deposition to form the internal sealing thin film ST_I, thereby effectively closing the inlets of the open micropores OP_H and essentially blocking fluid penetration. Such a vapor deposition method has advantages over the wet method of forming the coating layer in terms of the reliability of sealing the inlets of the open micropores OP_H. This will be explained in detail below.

[0125] Figure 18 is a cross-sectional view showing a method for forming a coating layer in an open micropore by a wet method. The method for forming a coating layer by a wet method may include the steps of filling the interior of the open micropore OP_H with the organic composition ORL (see Figure 18(a)) and drying and / or curing the organic composition ORL (see Figure 18(b)).

[0126] The organic composition ORL is provided in liquid form. The step of filling the open micropores OP_H with the organic composition ORL can be carried out by supporting the microorganisms in the liquid organic composition ORL. A drying and / or curing process is required for the organic composition ORL to remain in the organic coating layer ORC. The liquid component of the organic composition ORL evaporates or volatilizes during the drying and / or curing process, leaving behind the solid component to form the coating layer ORC. Although the volume of the organic composition ORL decreases through the above process, as shown in Figure 18(b), it is possible that the solid component cannot remain at the entrance of the open micropores OP_H, which serve as passages for the evaporation of the liquid component. In this case, the deep interior of the open micropores OP_H may be filled with the coating layer ORC, but the surface opening EN may still remain open. Therefore, it is possible that the fluid penetration passages inside the microorganisms cannot be completely blocked even after the formation of the coating layer ORC.

[0127] On the other hand, in the case of the internal sealing thin film ST_I shown in Figure 17, even if a space RM is formed inside the open micropore OP_H, at least the opening EN on the surface of the open micropore OP_H can be reliably closed. Therefore, higher sealing reliability can be achieved.

[0128] Figure 19 is a cross-sectional view of an electronic component according to another embodiment.

[0129] Referring to Figure 19, the electronic component 101 according to this embodiment differs from the embodiment in Figure 4 in that it lacks an external sealing thin film ST_O, and the internal sealing thin film ST_I is positioned set back a predetermined distance from the opening EN on the surface of the open micropore OP_H. The end of the internal sealing thin film ST_I is positioned at a predetermined depth from the opening EN on the surface of the open micropore OP_H, but at least in the region where it is positioned, it forms a closed section. Therefore, fluid can penetrate up to the groove defined by the open micropore OP_H and the internal sealing thin film ST_I, but further penetration into the interior can be prevented. The distance at which the internal sealing thin film ST_I is set back from the opening EN on the surface of the open micropore OP_H can be 100 nm or less, but is not limited thereto. When the opening EN on the surface of the open micropore OP_H is located on the electrode layer 131, the plating layer 151 can fill the space where the internal sealing thin film ST_I is set back.

[0130] The electronic component 101 shown in Figure 19 can be manufactured by performing the sealing thin film formation process in the same manner as in the previous embodiment, but by performing the sealing thin film removal process using methods such as dry etching or wet etching instead of dry polishing.

[0131] To illustrate with an example of a wet etching process, when the resulting material shown in Figure 13 is placed in an etching solution or sprayed with an etching solution, the sealing thin film ST_W is etched through all surfaces of the micro-body. The thickness to which the sealing thin film ST_W is etched is roughly proportional to the time it is exposed to the etching solution, in other words, the etching time. The etching time is set with the goal of removing all of the sealing thin film ST_W on the electrode layer 131. When all of the sealing thin film ST_W on the electrode layer 131 is removed, sealing thin films ST_W located on other surfaces of micro-bodies with similar thickness can also be removed. Furthermore, sealing thin films ST_W located on the stepped portion STP between the edge of the electrode layer 131 and the main body 110 can also be removed by the etching solution.

[0132] On the other hand, even in the region where the open micropore OP_H is formed, since the sealing thin film ST_ is laminated with a uniform thickness in the direction of the outer surface, the edge of the internal sealing thin film ST_I can be exposed when the sealing thin film ST_W on the electrode layer 131 is removed. If the etching process is stopped at this point, the internal sealing thin film ST_I can be left behind without receding from the opening EN on the surface of the open micropore OP_H, as shown in the embodiment of Figure 16.

[0133] In order to ensure the complete removal of the sealing thin film ST_W on the electrode layer 131, an over-etching process may be performed for a predetermined additional time. During this process, the internal sealing thin film ST_I may be exposed to the etching solution and further etched. Consequently, as shown in Figure 19, the internal sealing thin film ST_I may remain in a form that is recessed to a predetermined depth from the opening EN on the surface of the open micropore OP_H.

[0134] If over-etching is performed for a very long time, the internal sealing thin film ST_I may be excessively etched and completely removed, or the entrance to the open micropore OP_H may not be able to close, similar to the case shown in Figure 18(c). Therefore, the over-etching time can be adjusted so that the internal sealing thin film ST_I has a recession distance within an appropriate range (e.g., 100 nm or less).

[0135] The following provides a more detailed explanation of the examples, including manufacturing and experimental examples.

[0136] <Manufacturing Example 1> As described with reference to Figure 10, a microstructure including the main body and electrode layer was fabricated. Test specimens were prepared from the microstructure fabricated using a focused ion beam (FIB).

[0137] <Manufacturing Example 2> Electronic components were manufactured using the method described with reference to Figures 10, 11, 13, 15, and 16. The sealing thin film formation process was performed using a barrel-type PECVD apparatus with C3F6 as the source gas. The process conditions were set so that the average deposition thickness of the deposited material was 100 nm. The sealing thin film removal process was performed using a barrel-type mechanical polishing apparatus. The average size of the polishing particles used was 0.7 mm. After the sealing thin film removal process was completed, a plating layer was formed to complete the electronic components.

[0138] Test specimens were prepared from electronic components manufactured using focused ion beam (FIB).

[0139] <Manufacturing Examples 3-5> Except for changing the average deposition thickness of the deposited material to 15 nm (Manufacturing Example 3), 60 nm (Manufacturing Example 4), and 300 nm (Manufacturing Example 5), the electronic components were manufactured using the same method as in Manufacturing Example 2.

[0140] <Manufacturing Example 6> Electronic components were manufactured by immediately forming a plating layer on a micro-body without the sealing thin film formation process or the sealing thin film removal process.

[0141] <Example of experiment> Numerous samples from Manufacturing Example 1 were irradiated with BDV (Break Down Voltage), and the results are shown in Table 1 below.

[0142] [Table 1]

[0143] In Table 1 above, "min" represents the minimum BDV measured in the relevant manufacturing example, and "avg" represents the average BDV of the relevant manufacturing example. Referring to Table 1 above, Manufacturing Example 1, which was not exposed to the plating process, showed a relatively higher minimum BDV value compared to Manufacturing Examples 2-6, which underwent the plating process. The "Percentage of 38V or Less" in Table 1 above indicates the percentage of samples in each manufacturing example that showed BDV characteristics smaller than or similar to the minimum BDV of 38V in Manufacturing Example 1. A smaller "Percentage of 38V or Less" is considered to indicate better BDV characteristics. Referring to Table 1 above, among the manufacturing examples that underwent the plating process, Manufacturing Example 6, which omitted the sealing thin film formation process, and Manufacturing Example 3, where the average deposition thickness of the sealing thin film was less than 20 nm, showed a relatively large "Percentage of 38V or Less" of around 24,000 ppm. On the other hand, Manufacturing Examples 2, 4, and 5, where the average deposition thickness of the sealing thin film was 20 nm or more, showed a relatively small "Percentage of 38V or Less" and generally showed even better BDV characteristics. In manufacturing example 5, where the average deposition thickness of the deposited material was 300 nm, the process time was approximately three times longer than in manufacturing example 2, where the average deposition thickness of the deposited material was 100 nm. However, the "occupancy rate of 38V or less" was shown in the same way as in manufacturing example 2.

[0144] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the above embodiments and can be manufactured in a variety of different forms. A person with ordinary skill in the art to which the present invention belongs will understand that the invention can be implemented in other specific forms without changing the technical idea or essential features of the present invention. Therefore, the embodiments described above should be understood to be illustrative and not limiting in all respects. The following items will also be disclosed. [Item 1] A main body including numerous stacked dielectric layers and numerous internal electrodes arranged with corresponding dielectric layers in between, A microbody comprising an electrode layer arranged on the outer surface of the main body and connected to a portion of the numerous internal electrodes, Equipped with a sealing thin film containing fluorine, The microstructure is defined by at least a portion of the dielectric layer, the internal electrode, and the electrode layer, and includes an open micropore that opens through the surface of the electrode layer. The sealing thin film includes an internal sealing thin film that at least partially fills the interior of open micropores that open through the surface of the electrode layer, An electronic component comprising an internal sealing thin film that closes the entrance of an open micropore that opens through the surface of the electrode layer. [Item 2] The internal sealing thin film completely fills the inside of the open micropore, as described in item 1 of the electronic component. [Item 3] The electronic component according to item 1, wherein the open micropore includes an empty space that is not filled by the internal sealing thin film, and the empty space is located inside the region closed by the internal sealing thin film. [Item 4] The electronic component according to any one of items 1 to 3, further comprising a closed micropore that does not open through the surface of the microbody, defined by at least a portion of the dielectric layer, the internal electrode, and the electrode layer. [Item 5] The electronic component described in item 4, wherein the internal sealing thin film is not placed within the closed micropore. [Item 6] The electronic component according to any one of items 1 to 5, wherein the sealing thin film further comprises an external sealing thin film disposed on the interface between the end of the electrode layer and the main body. [Item 7] The electronic component described in item 6, wherein the external sealing thin film is made of the same material as the internal sealing thin film. [Item 8] The microstructure is defined by at least a portion of the dielectric layer, the internal electrode, and the electrode layer, and includes open micropores that open through the surface of the main body. The internal sealing thin film at least partially fills open micropores that open through the surface of the main body, The electronic component according to item 1, wherein the internal sealing thin film closes the entrance to an open micropore that opens through the surface of the main body. [Item 9] The electronic component according to item 7, wherein the internal sealing thin film and the external sealing thin film are at least partially crystallized. [Item 10] The electronic component according to any one of items 1 to 9, further comprising a plating layer disposed on the electrode layer, wherein the sealing thin film is not disposed between the electrode layer and the plating layer. [Item 11] The electronic component according to any one of items 1 to 10, wherein the internal sealing thin film is positioned recessed in the depth direction from the opening on the surface of the open micropore. [Item 12] The electronic component according to item 11, wherein the sealing thin film is not placed on the outer surface of the microbody. [Item 13] A main body including numerous stacked dielectric layers and numerous internal electrodes arranged with corresponding dielectric layers in between, An electrode layer is arranged on the main body and is electrically connected to the corresponding internal electrode, An external electrode including a plating layer disposed on the electrode layer, An internal sealing thin film that at least partially fills the inside of an open micropore that opens through the surface of the electrode layer, The system comprises an external sealing thin film disposed on the interface between the end of the electrode layer and the main body, The internal sealing thin film and the external sealing thin film contain fluorine. The internal sealing thin film closes the entrance to an open micropore that opens through the surface of the electrode layer, in an electronic component. [Item 14] The internal sealing thin film at least partially fills the inside of the open micropores that open through the surface of the main body, The electronic component according to item 13, wherein the internal sealing thin film closes the entrance to an open micropore that opens through the surface of the main body. [Item 15] The electronic component according to item 13 or 14, wherein the external sealing thin film is at least partially crystallized. [Item 16] The electronic component according to any one of items 13 to 15, wherein the maximum thickness of the external sealing thin film is 20 nm to 200 nm. [Item 17] The steps include providing a main body including a plurality of stacked dielectric layers and a plurality of internal electrodes arranged with a corresponding dielectric layer in between, and a microbody including an electrode layer arranged on the outer surface of the main body and connected to a portion of the plurality of internal electrodes, The steps include forming a fluorine-containing sealing thin film on the aforementioned microstructure by a vapor deposition process, The step of removing at least partially the sealing thin film, The sealing thin film includes an internal sealing thin film that at least partially fills the interior of open micropores that open through the surface of the electrode layer, A method for manufacturing an electronic component, wherein the internal sealing thin film closes the entrance of an open micropore that opens through the surface of the electrode layer. [Item 18] The method for manufacturing an electronic component according to item 17, wherein the step of forming the sealing thin film is performed in a plasma deposition apparatus using CxFy as the source gas. [Item 19] A method for manufacturing an electronic component according to item 17 or 18, wherein the step of removing at least partially the sealing thin film includes a dry polishing step. [Item 20] A method for manufacturing an electronic component according to any one of items 17 to 19, further comprising the step of forming a plating layer on the electrode layer after the step of removing at least partially the sealing thin film. [Explanation of Symbols]

[0145] 100 Electronic Components 110 Main Unit 111 Dielectric layer 111H Upper cover layer 111L Lower cover layer 121 1st internal electrode 122 2nd internal electrode 131, 132 electrode layer 151, 152 Plating layer 161 1st external electrode 162 2nd external electrode ST sealing thin film OP micropores

Claims

1. A main body including numerous stacked dielectric layers and numerous internal electrodes arranged with corresponding dielectric layers in between, A microbody comprising an electrode layer arranged on the outer surface of the main body and connected to a portion of the numerous internal electrodes, Equipped with a sealing thin film, The microstructure is defined by at least a portion of the dielectric layer, the internal electrode, and the electrode layer, and includes open micropores that open through the surface of the microstructure. The sealing thin film includes an internal sealing thin film that at least partially fills the inside of the open micropore and closes the entrance to the open micropore, The sealing thin film further includes an external sealing thin film disposed on the interface between the end of the electrode layer and the main body, The aforementioned external sealing thin film is made of the same material as the aforementioned internal sealing thin film. An electronic component in which the internal sealing thin film and the external sealing thin film are at least partially crystallized.

2. The electronic component according to claim 1, wherein the internal sealing thin film completely fills the inside of the open micropore.

3. The electronic component according to claim 1 or 2, wherein the open micropore includes an empty space that is not filled by the internal sealing thin film, and the empty space is located inside the region closed by the internal sealing thin film.

4. The electronic component according to any one of claims 1 to 3, further comprising a closed micropore that does not open through the surface of the microbody, defined by at least a portion of the dielectric layer, the internal electrode, and the electrode layer.

5. The electronic component according to claim 4, wherein the internal sealing thin film is not disposed within the closed micropore.

6. The electronic component according to claim 1, wherein the internal sealing thin film and the external sealing thin film contain fluorine.

7. The electronic component according to any one of claims 1 to 6, further comprising a plating layer disposed on the electrode layer, wherein the sealing thin film is not disposed between the electrode layer and the plating layer.

8. The electronic component according to any one of claims 1 to 7, wherein the internal sealing thin film is positioned recessed in the depth direction from the opening on the surface of the open micropore.

9. The electronic component according to claim 8, wherein the sealing thin film is not disposed on the outer surface of the microbody.

10. A main body including numerous stacked dielectric layers and numerous internal electrodes arranged with corresponding dielectric layers in between, An electrode layer is arranged on the main body and is electrically connected to the corresponding internal electrode, An external electrode including a plating layer disposed on the electrode layer, The system comprises an external sealing thin film disposed on the interface between the end of the electrode layer and the main body, The aforementioned external sealing thin film is at least partially crystallized, in an electronic component.

11. The electronic component according to claim 10, wherein the external sealing thin film contains fluorine.

12. The electronic component according to claim 10 or 11, wherein the maximum thickness of the external sealing thin film is 20 nm to 200 nm.

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