Apparatus and system for in-situ scanning of substrate temperature in an epitaxial reactor

Abstract

The present invention provides apparatus and systems adapted for measuring the temperature of the deposited surface of a substrate during and after deposition. [Solution] A temperature monitoring system for measuring the temperature of a substrate in a reactor, comprising: (i) a reaction chamber suitable for deposition of a film on a deposition surface of a substrate; and (ii) a temperature monitoring device comprising an optical device, a remote sensing thermometer, and a support device. The remote sensing thermometer comprises at least one detector of IR radiation adapted for temperature measurement. The reaction chamber comprises at least one aperture, and at least one optical device is adapted to (i) block IR radiation emitted from at least one point on the deposition surface of the substrate through the aperture, and (ii) direct the captured IR radiation to the detector.

Description

Technical Field

[0001] The present invention relates to the field of temperature monitoring systems for measuring the temperature of a substrate during a deposition process within a reactor.

[0002] Furthermore, the present invention relates to the field of epitaxial deposition of semiconductor films on a substrate, and more particularly to a reactor in which a temperature monitoring system is implemented.

[0003] Furthermore, the present invention relates to the field of depositing silicon carbide films and gallium nitride films on a semiconductor substrate within a hot wall cross-flow homoepitaxial reactor or heteroepitaxial reactor.

Background Art

[0004] Semiconductor layers fabricated by epitaxial growth, also known as epi-layers, are formed by epitaxial deposition within the reaction chamber of a reactor. The deposited material may be the same as the substrate or may include a different semiconductor having certain desired qualities. Epitaxial technology is suitable for the manufacture of complex microprocessors and memory devices because it allows control of the crystal structure formed on the substrate and improvement of the surface characteristics of the epi-layer.

[0005] Typically, the reaction chamber is heated to a desired temperature prior to deposition, and the temperature is maintained substantially constant throughout the deposition process. Therefore, an insulation system is used to reduce the energy required to achieve and maintain the nominal temperature of the deposition process.

[0006] The ability to control the temperature over time, during the deposition process, and maintain it from execution affects the quality of the film growth.

[0007] However, other temperature-related parameters also affect the deposition process. In fact, it has been observed that local temperature variations on the deposition surface of the substrate significantly affect the quality of the deposited film.

[0008] The reaction chamber type (single wafer vs. batch), reaction chamber design (i.e., horizontal or vertical flow), and substrate size can affect the overall spatial temperature profile across the substrate being processed. Typically, the deposition surface of the substrate is exposed to a temperature gradient, which can lead to undesirable effects including doping heterogeneity, growth deviations, and other defects.

[0009] While some reaction chamber designs known in the art (such as the horizontal cross-flow chamber for single wafers disclosed in EP4065747) exhibit improved temperature gradients on the substrate, they do not allow for the measurement of such gradients or direct monitoring of the temperature of the substrate deposition surface in real time, for the purpose of optimizing process conditions / design or tracking inter-run changes.

[0010] Generally, constraints imposed by reaction chamber design, their high operating temperatures, and the presence of corrosive process gases make it difficult to accurately measure the temperature of the substrate in real time at one or more points on the deposition surface of the substrate.

[0011] For example, in the case of an epitaxial reactor for silicon carbide deposition, the temperature inside the chamber cavity is in the range of 1400-1750°C, and the growth of parasitic SiC accumulation on chamber components exposed to process gases adds another layer of complexity, as the deposit can block any smaller holes produced on the chamber walls, allowing remote sensing thermometers to point directly at the substrate. On the other hand, larger pores can affect the temperature profile within the reaction chamber. [Overview of the project] [Problems that the invention aims to solve]

[0012] Therefore, especially in the case of high-temperature wall reactors for silicon carbide deposition, it is desirable to provide apparatus and systems adapted to measure the temperature of the deposition surface of the substrate during and after deposition. [Means for solving the problem]

[0013] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail below in the detailed description of the exemplary embodiments of this disclosure. This summary is not intended to identify any major or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0014] The objective of this invention is to overcome the shortcomings of the prior art.

[0015] In particular, an object of the present invention is to provide a temperature monitoring device and a temperature monitoring system incorporating the device, which are adapted to measure the temperature of one or more points on the deposited surface of a substrate in a reactor during a deposition process.

[0016] A further object of the present invention is to provide a reactor for silicon carbide deposition equipped with the above-described temperature monitoring device and / or temperature monitoring system.

[0017] The primary objectives described above are achieved by the present invention as described in the appended claims, which constitute an integral part of this specification.

[0018] It should be noted that even if reference numerals are used in the claims, their use does not limit the scope of the claims. The sole purpose of reference numerals is to make the claims easier to understand. [Brief explanation of the drawing]

[0019] The examples presented herein are not intended to represent the actual appearance of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of the present disclosure.

[0020] [Figure 1]It is a diagram schematically illustrating a temperature monitoring system according to one embodiment of the present invention. [Figure 2] It is a schematic diagram of a reactor according to one embodiment of the present invention. [Figure 3] It is a diagram schematically showing a temperature monitoring device according to one embodiment of the present invention. [Figure 4] It is a diagram schematically showing the operation of a data acquisition system of a temperature monitoring device according to an embodiment of the present invention.

Mode for Carrying Out the Invention

[0021] Certain specific embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the scope of the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the present invention disclosed should not be limited by the specific disclosed embodiments described below.

[0022] Here, like reference numerals refer to the figures that identify similar structural features or aspects of the present disclosure.

[0023] It will be understood that the elements in the figures are illustrated for simplicity and clarity. In particular, some elements may be omitted or not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to aid in the understanding of the illustrated embodiments of the present disclosure.

[0024] In one aspect, the present invention relates to a temperature monitoring device 100 comprising at least one optical device 104, at least one remote sensing thermometer 102, and a support device 130, the support device 130 being adapted to support the optical device 104 and comprising a storage element 132 integrated with the optical device 104.

[0025] The remote sensing thermometer includes at least one detector of IR radiation adapted for temperature measurement.

[0026] The optical device is adapted to reflect, refract, or otherwise change the optical path of the IR light from a first direction to a second direction different from the first direction, and thus, due to the change in direction imparted by the optical device, enables IR radiation from a spot outside the detection range to reach the IR detector. "Outside the detection range" means that the target point is outside the detection range of the detection device.

[0027] "Remote sensing thermometer" refers to a device adapted to measure the temperature of an object in a non-contact manner, such as a thermographic camera, a thermocouple, or a pyrometer. In the context of the present invention, the remote sensing thermometer is preferably selected to measure the temperature of a substrate in a reaction chamber during deposition. When the device is used in a SiC reactor, for example, the remote sensing thermometer is configured to measure temperatures up to 1750 °C.

[0028] "Support device" refers to a device suitable for supporting and optionally protecting the optical device. The support device may be made of quartz, stainless steel, and / or graphite. For example, the support device may comprise an external enclosure made of stainless steel or graphite, and may have a storage element made of graphite or quartz.

[0029] In a non-limiting but preferred embodiment, the optical device is a prism or mirror suitable for operating at temperatures between 1400 and 1750 °C. For example, a sapphire prism has been found to function particularly well in the implementation of the present invention.

[0030] The temperature monitoring device is a composite device for remote temperature measurement and is particularly useful, for example, when due to space constraints or other ambient conditions, the remote sensing thermometer cannot directly indicate and measure the temperature of the object of interest.

[0031] The temperature monitoring device according to the present invention is particularly useful when it is necessary to easily modify the overall uncoupling of the device to accommodate different operations of the system in which it is embedded.

[0032] The temperature monitoring device according to the present invention can be advantageously used in a system for measuring the temperature of the deposited surface of a substrate in the reaction chamber of a reactor in real time.

[0033] As will become apparent below, the temperature monitoring device 100 according to the present invention may include several optional advantageous configurations, whether considered independently or embedded in a temperature monitoring system. For brevity, these configurations will be described in relation to the latter case, but they can also be effectively implemented in the temperature monitoring device itself.

[0034] In one embodiment, the present invention relates to a temperature monitoring system 50 for measuring the temperature of a substrate 10 during the deposition process of a reactor 1.

[0035] The temperature monitoring system includes (i) at least one reaction chamber 500 of a reactor suitable for deposition of a film on a substrate surface, and (ii) at least one temperature monitoring device 100.

[0036] Specifically, a reaction chamber refers to one or more parts of a reactor where the reaction and deposition of a film on the deposition surface of a substrate take place.

[0037] Typically, a reaction chamber defines at least one (partially or completely) enclosed space formed by one or more walls, suitable for the flow of process gases over a substrate. Typically, the walls of the reaction chamber are provided with one or more openings, such as inlets and outlets, for the gas flow.

[0038] Typically, the substrate is positioned within a receiving area of ​​a reaction chamber enclosure adapted to receive and rotate at least one substrate placed on a substrate holder.

[0039] "Deposition surface" refers to the surface of the substrate that is exposed to process gas during a specific deposition cycle, that is, the surface on which the deposited film grows during that cycle.

[0040] The temperature monitoring device includes at least one optical device 104, at least one remote sensing thermometer 102, and a support device 130.

[0041] The support device is adapted to support the optical device and includes a retractable element 132 integrated with the optical device 104.

[0042] The reaction chamber is provided with at least one opening 106. The opening is preferably a gas inlet or a gas outlet.

[0043] The optical device blocks the IR radiation emitted from the target point through the aperture 106 and directs the blocked IR radiation towards the detector.

[0044] This assembly allows the temperature monitoring device to measure the temperature of at least one point of interest on the deposited surface of the substrate, which is located outside the field of view of the remote sensing thermometer.

[0045] "Optical device" means any device adapted to change the optical path of IR light from a first direction to a second direction different from the first direction, under specific conditions of the device's inclination with respect to a first direction and wavelength of incident radiation, by reflection, refraction, or other means.

[0046] The temperature monitoring system described above is an assembly suitable for measuring, monitoring, and / or scanning the temperature of the deposited surface of the substrate in the reaction chamber in real time during the reaction and deposition process.

[0047] Advantageously, the temperature monitoring system of the present invention makes it possible to overcome several spatial constraints for measuring the temperature of a substrate inside a reactor. The presence of an optical device allows the remote sensing thermometer to be positioned out of line of sight of the point of interest being measured, thereby providing a compact design.

[0048] A retractable element is an element adapted to move along at least one predetermined direction. This may be an arm, a probe, or a more complex retractable mechanism.

[0049] The retractable element has the effect of allowing the optical device to be displaced for routine operations such as accessing components or substrates within the reaction chamber, and / or blocking IR radiation from different target points on the substrate's deposition surface.

[0050] In one embodiment, the remote sensing thermometer is preferably an infrared pyrometer and is suitable for spot temperature measurement.

[0051] In one embodiment, the remote sensing thermometer includes a light source. The light source emits light rays 114 within the visible range to highlight the point to be measured.

[0052] Advantageously, the light beam provides a visible indicator of the light path of radiation from the substrate to the remote sensing thermometer, thereby facilitating the correct positioning of the temperature monitoring device 100 relative to the reaction chamber 500 and the substrate 10. The light source is preferably collimated. The light source is even more preferably a laser.

[0053] In one embodiment, the support device 130 includes a cooling system 112.

[0054] Advantageously, the cooling system 112 protects the temperature monitoring device from the heat of the reaction chamber 500, allowing its components to remain intact.

[0055] To further protect the temperature monitoring device from high temperatures, the retractable element 132 can be made of graphite or quartz.

[0056] Furthermore, the support device may be configured to enclose the optical device entirely or partially, or it may have an opening 134. The opening 134 is adapted to allow IR and optionally visible radiation to reach (or be reflected / refracted from) the optical device from the deposition surface.

[0057] Advantageously, in the above embodiment, the optical device is protected by the enclosure of the support device.

[0058] In one embodiment, the support device is adapted to displace the optical device along a predetermined direction, preferably which is substantially perpendicular to the deposition surface of the substrate.

[0059] Advantageously, this design allows for reduced load on the temperature monitoring system.

[0060] In one embodiment, the support device 130 is adapted to displace the optical device 104 from position A to a different position A'.

[0061] At position A, the optical device is adapted to divert the blocked IR radiation emitted from a first reference point on the deposition surface of the substrate 10 through the aperture 106 to the detector.

[0062] At position A', the optical device is adapted to direct the blocked IR radiation emitted from a second reference point on the depositional surface of the substrate through at least one aperture to at least one detector. The second reference point is different from the first reference point.

[0063] Advantageously, the above configuration allows for real-time monitoring of the temperature at at least two different target points located on the deposition surface of the substrate.

[0064] The above measurements allow for the evaluation of temperature variations between different reference points on the deposit surface. For this effect, it may be advantageous to select the center point and upstream peripheral points of the substrate as the first and second target points to be measured. Optionally, downstream peripheral points, as well as any multiple intermediate points between them, may also be measured.

[0065] The "center point" refers to the geometric center of the deposition surface of the substrate. For a circular substrate, it coincides with the center. For any other common shape, the center point coincides with the centroid.

[0066] The terms upstream and downstream refer to the flow of process gases within the reaction chamber.

[0067] In one embodiment, the support device is configured to displace the optical device in a direction perpendicular to the deposition surface of the substrate to continuously scan the temperature of the deposition surface along a plurality of points, wherein the plurality of points preferably include the center point of the deposition surface of the substrate and at least one peripheral point, and the at least one peripheral point is preferably an upstream peripheral point.

[0068] The above embodiment makes it possible to measure the temperature gradient on the deposition surface of the substrate, which provides detailed and useful diagnostic information and allows corrective actions to be taken as needed.

[0069] In one embodiment, the support device is configured to displace the optical device from position A to a different position B.

[0070] At position A, the optical device is adapted to direct the IR radiation emitted through the aperture from a first reference point on the deposition surface of the substrate towards the detector.

[0071] At position B, the optical device is out of line of sight to every point on the substrate's deposition surface. Therefore, at position B, the optical device does not block the IR radiation emitted from the substrate.

[0072] Advantageously, according to this embodiment, the optical device is fitted to retract completely into the aperture 106 and also allows for easy access to the inside of the reaction chamber and / or further protection of the optical device when not in use.

[0073] In one embodiment, the remote sensing thermometer 102 is adapted to displace along a predetermined trajectory in order to scan the temperature of the deposit surface along a plurality of points, including at least the center point and at least one peripheral point of the deposit surface.

[0074] The above embodiments have the effect of being usable instead of displacing an optical device to scan the deposition surface of the substrate. Depending on the constraints imposed by the reaction chamber, one embodiment may be preferred over the other, or they may be combined.

[0075] In one embodiment, at least one opening 106 is configured or configurable to discharge exhaust gas from the reaction chamber. For example, it may be an outlet for exhaust gas.

[0076] Advantageously, the exhaust gas outlet is often an established configuration of the reaction chamber and a sufficiently large gap within the enclosure to allow a wide view of the chamber's interior without compromising its thermal profile.

[0077] In one embodiment, the temperature monitoring device is connected to or can be connected to the gas source 110.

[0078] The gas source is adapted to flow gas between the optical device 104 and the substrate, preferably between the optical device and the opening 106, and more preferably between the optical device and the opening 134.

[0079] The gas flow from the gas source 110 advantageously protects the optical device from contamination and / or heat by exhaust gases.

[0080] Advantageously, the gas source may be an inert gas, preferably argon, or a hydrogen source.

[0081] In one embodiment, the temperature monitoring device is adapted to convert the temperature measured by a remotely sensing thermometer into a first electrical signal, i.e., a temperature signal.

[0082] Furthermore, the temperature monitoring device is - A data acquisition system adapted to acquire the first electrical signal and convert it into a first set of digital numerical values, - It comprises accessible memory and a processor adapted to process a first set of digital numbers.

[0083] Advantageously, in this embodiment, the remote sensing thermometer also functions as the first temperature sensor of the data acquisition system. The processor of the data acquisition system, or an optional CPU connected thereto, may be configured to process the digital values, for example by checking them against a set of benchmark values, and to trigger further controls, such as increasing or decreasing the power of the reactor heating system in response to the temperature readings from the remote sensing thermometer.

[0084] The data acquisition system may optionally be configured to include a user interface for receiving input or displaying relevant information about numerical or other objects of interest, and / or non-volatile memory for storing numerical values ​​for future reference or use.

[0085] The temperature monitoring device may further include a position sensor 402 adapted to (i) measure the position of an optical device and (ii) convert it into a second electrical signal which is a position signal.

[0086] In this embodiment, the data acquisition system is adapted to acquire a second electrical signal and convert it into a second set of digital values. Furthermore, the processor is adapted to process the second set of digital values ​​and associate them with a first set of digital values. This allows the temperature measurement to be indirectly associated with the position of the optical device and with one or more points on the deposition surface being measured. The processor of the data acquisition system or an optional CPU connected thereto may be configured to initiate a scan of the deposition surface of the substrate, for example, via user input from a user interface or via a predetermined program. The scanning of the deposition surface may include, for example, the center point of the substrate as well as upstream and downstream peripheral points.

[0087] Depending on the results, the user or computer program may be configured to initiate controls that impose appropriate changes to the process gas flow rate, the heating system power, and / or the pressure within the chamber.

[0088] As an additional or alternative configuration to the above, the user or computer program may be configured to initiate the complete retraction of the optical device at a position where any and all points on the deposition surface of the substrate are outside the detection range, under predetermined or desired conditions.

[0089] This can facilitate access to the substrate or the inner wall of the reaction chamber through the opening 106.

[0090] In one embodiment, the reaction chamber is a high-temperature wall cross-flow chamber adapted for epitaxial deposition of a silicon carbide film on a substrate.

[0091] In one embodiment, the present invention relates to a reactor 1 for depositing a layer, preferably a semiconductor layer, onto a deposition surface of a substrate 10.

[0092] The reactor is, -Alone or in combination with the temperature monitoring system 50 described in any of the above embodiments, - An insulating system surrounding the reaction chamber, - It includes a heating system 200 surrounding the insulation system.

[0093] The temperature monitoring device for reactor 1 is adapted to measure the temperature of one or more points on the deposition surface of the substrate in real time during operation.

[0094] Advantageously, the reactor according to the present invention allows for in-situ measurement and optional scanning of the temperature on the deposited surface of the substrate during the epitaxial deposition process.

[0095] In a particularly advantageous embodiment, the reactor is an epitaxial reactor for the deposition of silicon carbide. In this case, the temperature inside the chamber cavity may be in the range of 1400 to 1750°C. These temperatures can be reached in various ways, and the chamber may be of the "hot wall" or "cool wall" type. In the former preferred example, the walls of the reaction chamber and the sealed cavity typically reach high deposition temperatures. These components can be effectively heated via induction means. In this case, the reaction chamber may be configured with one or more structural components, such as one or more walls made of a sensitive material, for example, graphite.

[0096] The reaction chamber may also be configured to include other sensitivity functional components, such as a graphite substrate holder, a ring, and upstream and downstream cover elements.

[0097] The heating system may be configured to include one or more induction coils.

[0098] The insulation system may consist of one or more covers made of insulating material. For this purpose, porous carbonaceous materials, for example, optionally, carbon composites made from short-cut carbon fibers interconnected in a matrix or pressed together, can be used.

[0099] The reactor may also be configured with an external jacket wrapped around the reaction chamber, positioned between the latter and the heating system. The external jacket can limit the heat irradiated into the surrounding environment by the reaction chamber. The external jacket may be a double-walled quartz tube cooled with a cooling fluid such as water.

[0100] It will be understood that the reactor according to the present invention implicitly includes any other appropriate additional elements, such as pumps, valves, gas panels, and circuits, to ensure its correct operation.

[0101] The subject matter of this disclosure includes all novel and non-obvious combinations and partial combinations of the various processes, systems, and configurations disclosed herein, as well as all their equivalents, as well as any other configurations, functions, operations, and / or characteristics disclosed herein.

[0102] Detailed description of the drawing Figure 1 provides a simplified diagram of a temperature monitoring system 50 in two different configurations A and A', which enable the measurement of the temperature at two different target points on the deposited surface of the substrate 10. For clarity, reference numbers are provided only for configuration A.

[0103] In both configurations A and A', the system comprises a temperature monitoring device 100 and a reaction chamber 500, and a simplified cross-sectional view along its longitudinal axis X is provided. The reaction chamber comprises an upper chamber section 504, a lower chamber section 502, and an opening 106. The lower chamber section 502 includes a receiving area 506 suitable for receiving a substrate holder 15 having a substrate 10 supported therein.

[0104] The temperature monitoring device 100 comprises a remote sensing thermometer 102, such as a pyrometer, and an optical device 104, such as an IR-vis mirror. The temperature monitoring device 100 also comprises support devices, not shown, such as an arm supporting the optical device. The light ray 114 visually illustrates the optical path from / to the detector to / from the substrate deposition surface of the temperature monitoring system. In configurations A and A', it can be seen that the detector measures different spots on the deposition surface as the optical device moves from position z1 to position z2 in the vertical direction Z perpendicular to X.

[0105] It will be understood that the same effect can be achieved by either holding the optical device at a predetermined height and rotating the optical device (for example, around an axis perpendicular to both X and Z, and at the center where the reflection occurs), or by rotating a remote sensing thermometer to evaluate the temperature of different spots on the depositional surface.

[0106] Figure 2 shows reactor 1 equipped with a temperature monitoring system. The latter illustrates the temperature monitoring device 100 and the reaction chamber 500.

[0107] The reaction chamber 500 includes an external jacket, i.e., a quartz tube 300 surrounding the lower chamber portion 502 and the upper chamber portion 504. These components are made of graphite and are suitable for heating by induction means. Components 502 and 504 extend along the longitudinal direction x and exhibit a crescent shape in a plane transverse to the longitudinal direction, as shown in Figure 2 of EP4065747.

[0108] The lower chamber portion 502 shows a receiving area 506 adapted to receive and rotate a substrate holder 15 that supports the substrate 10.

[0109] In this configuration, the process gas can enter the reaction chamber 500 through the liner 116 in a cross-flow configuration. In this case, the deposition surface of the substrate 10 is the surface that directly faces the upper chamber portion 504. The exhaust process gas may exit the reaction chamber through the opening 106.

[0110] The reaction chamber also comprises side walls extending along the longitudinal direction and an insulating system (not shown) positioned between the chamber components and the quartz tube 300.

[0111] The temperature monitoring device 100 comprises an optical device 104 and a remote sensing thermometer 102 having an IR detector (not shown). In this case, the optical device is a sapphire prism suitably oriented to receive a beam of IR light from a spot on the deposition surface of the substrate 10 along a first direction. Upon striking the first inner surface of the prism, the beam of IR light moves along a second direction different from the first direction and strikes an IR detector housed in the remote sensing thermometer. This makes it possible to measure the temperature of the aforementioned single spot.

[0112] The light rays 114 emitted from a laser light source (not shown) included in the remote sensing thermometer allow the temperature monitoring device to be visually aligned with the substrate. The path of the light rays 114 travels in the opposite direction but indicates the path of IR light from the deposited surface of the substrate.

[0113] The orientation of the optical device may be configured to measure the temperature of different spots on the deposition surface of the substrate, depending on its position along the longitudinal direction x and the vertical direction z perpendicular to the deposition surface.

[0114] The temperature monitoring device 100 is connected to a gas source 110 between the latter and the aperture 106 to supply a flow of argon to the front of the optical device. The argon flow protects the optical device from the heat of the reaction chamber and from fouling and deterioration due to exposure to exhaust gases from the reaction chamber.

[0115] The temperature monitoring device 100 includes a cooling system 112.

[0116] The cooling system includes bellows channels cut into or machined into the outer wall of the support device 130, which are adapted to allow a cooling gas or cooling fluid to flow through and control the temperature of the temperature monitoring device.

[0117] Reactor 1 is also configured to include an exhaust line 600 for collecting exhaust gas from an outlet opening 106 to a scraper (not shown) and an induction coil (heating system 200) wound around a quartz tube 300.

[0118] Figure 3 provides simplified cross-sectional views in the XZ plane of the temperature monitoring device 100 in three different configurations A, A', and B.

[0119] In all configurations, the temperature monitoring device includes a remote sensing thermometer 102 having an IR detector (not shown), a prism optical device 104, a retractable element 132, and a viewport 120.

[0120] The temperature monitoring device 100 is connected to a gas source 110 adapted to provide a flow of argon (dashed line) in front of the optical device 104 in order to protect the latter from exhaust and heat.

[0121] The temperature monitoring device 100 according to this embodiment also includes a cooling system 112 adapted to flow a cooling fluid through a meandering conduit fabricated within the outer wall of the support device 130. The latter also includes a retractable element 132 suitable for displacing the optical device 104 in the vertical direction Z to reach three different configurations A, A', and B.

[0122] The retractable element also includes an opening 134 that allows IR radiation from the substrate to reach the optical device 104.

[0123] In configuration B, the optical device and the retractable element 132 are completely housed within the support device 130.

[0124] In configurations A and A', the optical devices are positioned at different heights in the vertical Z direction so as to receive IR light from different source points at the same angle and direct it towards the detector along one identical (vertical) direction z. The optical path is illustrated by ray 114, which is a laser beam emitted by a remote sensing thermometer for alignment purposes.

[0125] Figure 4 schematically shows the data acquisition system 418 of the temperature monitoring device 100 used in reactor 1.

[0126] In this embodiment, the data acquisition system comprises two sensors: (i) a remote sensing thermometer 102, and (ii) an arbitrary position sensor 402 that measures the position of the optical device (not shown) of the temperature monitoring device relative to a predetermined reference. The two sensors transmit their respective temperature and position signals to an input card 406, which converts the signals into two sets of digital values. These digital values ​​are transmitted to a CPU 412.

[0127] The CPU may be configured to include accessible memory and processors.

[0128] The CPU communicates with an optional UI 414 and an optional non-volatile memory 416. The UI may be configured to display relevant information to the user and / or to receive input from the user.

[0129] CPU and UI refer to the central processing unit and user interface, respectively.

[0130] Non-volatile memory may store information about measurements and / or user inputs for future reference.

[0131] The CPU may be configured to send any processed signals / commands to the output card 408.

[0132] The CPU may be configured to correlate temperature and position values ​​provided by sensors to depict temperature variations across different points on the deposition surface of the substrate.

[0133] The output card 408 is connected to the optional first actuator 404.

[0134] An "actuator" refers to a system adapted to act on commands, such as commands from an output card.

[0135] For example, the first actuator 404 may be configured to command the displacement of an optical device to measure the temperature of different spots on the deposition surface of the substrate.

[0136] As an additional or alternative configuration, the first actuator 404 may also be configured to regulate the flow of inert gas from a gas source (not shown) in front of the optical device.

[0137] The first actuator typically controls components belonging to a temperature monitoring device.

[0138] The output card 408 is also connected to an optional second actuator 410. The second actuator may be configured to control reactor components such as a heating system and / or a flow regulator that controls the flow of process gases inside the reaction chamber. It may also be configured to control the pressure inside the reaction chamber of the reactor. These parameters may allow for correction of the temperature and / or temperature gradient on the wafer deposition surface according to an appropriate calibration curve. [Explanation of Symbols]

[0139] 1 Reactor 10 Base material 15. Base material holder 50 Temperature Monitoring System 100 Temperature monitoring device 102 Remote sensing thermometer 104 Optical equipment 106 Aperture 110 Gas source 112 Cooling System 114 Ray of light 116 Liner 120 Viewports 130 Support device 132 Retractable elements 134 Opening 200 heating system, quartz tube 402 Position Sensor 404 First actuator 406 Input Card 408 Output Card 410 Second actuator 412 CPU 414 UI 416 Non-volatile memory 418 Data Acquisition System 500 reaction chambers 502 Lower chamber section 504 Upper chamber section 506 Acceptance Area 600 exhaust line

Claims

1. A temperature monitoring system for measuring the temperature of a substrate during the deposition process of a reactor, - At least one reaction chamber of a reactor suitable for depositing a film on the deposition surface of a substrate, - A temperature monitoring device comprising at least one optical device, at least one remote sensing thermometer, and at least one support device, Equipped with, The support device comprises a retractable element integrated with the optical device, which is adapted to support the at least one optical device. The remote sensing thermometer comprises at least one IR radiation detector suitable for temperature measurement, the reaction chamber is provided with at least one aperture, and the at least one optical device is - To block IR radiation emitted from at least one point on the deposited surface of the substrate through the at least one opening, - Directing the blocked IR radiation towards the at least one detector, The temperature of at least one point on the deposition surface is measured using the remote sensing thermometer, A temperature monitoring system adapted to perform the following tasks.

2. The temperature monitoring system according to claim 1, wherein the remote sensing thermometer is a high-temperature thermometer suitable for spot temperature measurement.

3. The temperature monitoring system according to claim 1, wherein the remote sensing thermometer comprises a light source, the light source emitting a ray to highlight at least one point on the deposited surface of the substrate emitting the IR radiation to be measured.

4. The temperature monitoring system according to claim 1, wherein the support device comprises a cooling system.

5. The temperature monitoring system according to claim 1, wherein the support device is adapted to displace the optical device along a predetermined direction, and the predetermined direction is substantially perpendicular to the deposited surface of the substrate.

6. The temperature monitoring system according to claim 1, wherein the support device is provided with an opening, and the optical device is enclosed within or in part of the support device.

7. The temperature monitoring system according to claim 1, wherein the retractable element is made of graphite.

8. The support device is adapted to displace the optical device from position A to a position A' different from A, - At position A, the optical device is adapted to direct the blocked IR radiation emitted from a first reference point on the deposited surface of the substrate through the at least one aperture to the at least one detector, and therefore - At position A', the optical device is adapted to direct at least one detector of blocked IR radiation emitted through one aperture from a second reference point on the deposition surface of the substrate, wherein the second reference point is different from the first reference point, the temperature monitoring system according to claim 1.

9. The support device is configured to displace the optical device from position A to position B, which is different from A. - At position A, the optical device is adapted to direct the IR radiation emitted from a first reference point on the deposited surface of the substrate through the at least one aperture to the at least one detector. - The temperature monitoring system according to claim 1, wherein at position B, the optical device is out of line of sight to every point on the deposited surface of the substrate.

10. The temperature monitoring system according to claim 1, wherein the support device is configured to displace the optical device in a direction perpendicular to the deposition surface of the substrate, thereby continuously scanning the temperature of the deposition surface along a plurality of points, the plurality of points including the center point and at least one peripheral point of the deposition surface of the substrate, the at least one peripheral point being an upstream peripheral point.

11. The temperature monitoring system according to claim 1, wherein the at least one optical device is a prism or mirror suitable for operation at temperatures between 1400°C and 1750°C.

12. The temperature monitoring system according to claim 1, wherein the remote sensing thermometer is adapted to displace along a predetermined trajectory to scan the temperature of the deposition surface along a plurality of points, including at least a central point and at least one peripheral point of the deposition surface.

13. The temperature monitoring system according to claim 1, wherein the at least one opening is an opening adapted to discharge exhaust gas from the reaction chamber.

14. The temperature monitoring system according to claim 1, wherein the temperature monitoring device is connected to a gas source adapted to flow gas between the optical device and the substrate.

15. The temperature monitoring system according to claim 14, wherein the gas source is a source of argon or hydrogen.

16. The temperature monitoring device is adapted to convert the temperature measured by the remote sensing thermometer into a first electrical signal, and the temperature monitoring device is adapted to convert the temperature measured by the remote sensing thermometer into a first electrical signal. - A data acquisition system adapted to acquire the first electrical signal and convert it into a first set of digital numerical values, - Accessible memory, and a processor adapted to process the first set of the aforementioned digital numbers, The temperature monitoring system according to claim 1, further comprising:

17. The temperature monitoring system according to claim 16, wherein the temperature monitoring device comprises a position sensor adapted to measure the position of the optical device and convert it into a second electrical signal, the data acquisition system adapted to acquire the second electrical signal and convert it into a second set of digital values, and the processor adapted to process the second set of digital values ​​and associate them with a first set of digital values.

18. The temperature monitoring system according to claim 1, wherein the reaction chamber is a high-temperature wall cross-flow chamber adapted for epitaxial deposition of a silicon carbide film on a substrate.

19. A reactor for depositing a film on a substrate surface, - A temperature monitoring system according to any one of claims 1 to 18, - An insulating system surrounding the reaction chamber, - A heating system surrounding the aforementioned insulating system, Equipped with, A reactor in which the temperature monitoring device is adapted to measure the temperature of one or more points on the deposited surface of the substrate in real time during reactor operation.

20. A temperature monitoring device, - At least one optical device, - At least one remote sensing thermometer equipped with an IR detector, - A support device adapted to support the optical device and comprising a retractable element integrated with the optical device, Equipped with, A temperature monitoring device in which the optical device is adapted to reflect, refract, or change the optical path of IR light from a first direction to a second direction different from the first direction.

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