Method for stabilizing a plasma processing apparatus and plasma processing apparatus

Abstract

This technology provides a way to stabilize the surface inside a processing container in a short amount of time. [Solution] A method for stabilizing a plasma processing apparatus according to one aspect of the present disclosure comprises supplying plasma generated from a seasoning gas containing hydrogen gas into a processing vessel to perform a seasoning process, and performing a dummy process, wherein the dummy process includes supplying plasma generated from a film-forming gas into the processing vessel to perform a film-forming process to form a film on the surface inside the processing vessel, and supplying plasma generated from a cleaning gas containing halogen gas into the processing vessel to perform a cleaning process to clean the inside of the processing vessel.

Description

Technical Field

[0001] The present disclosure relates to a method for stabilizing a plasma processing apparatus and a plasma processing apparatus.

Background Art

[0002] Patent Document 1 discloses a technique for performing a precoat treatment before performing a film forming treatment in a processing container.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of stabilizing the surface inside the processing container in a short time.

Means for Solving the Problems

[0005] A method for stabilizing a plasma processing apparatus according to an aspect of the present disclosure includes performing a seasoning process by supplying plasma generated from a seasoning gas containing a hydrogen-containing gas into a processing container, and performing a dummy process. Performing the dummy process includes supplying plasma generated from a film forming gas into the processing container and performing a film forming process for forming a film on the surface inside the processing container, and supplying plasma generated from a cleaning gas containing a halogen-containing gas into the processing container and performing a cleaning process for cleaning the inside of the processing container.

Effects of the Invention

[0006] According to the present disclosure, the surface inside the processing container can be stabilized in a short time.

Brief Description of the Drawings

[0007] [Figure 1] This is a schematic cross-sectional view showing a plasma processing apparatus according to an embodiment. [Figure 2] This figure shows a method for stabilizing a plasma processing apparatus according to an embodiment. [Figure 3] This figure shows an example of dummy processing. [Figure 4] This is a schematic cross-sectional view showing a tabletop that has not undergone seasoning treatment. [Figure 5] This is a schematic cross-sectional view showing a tabletop that has undergone seasoning treatment. [Figure 6] Figure (1) shows the measurement results of the number of particles. [Figure 7] Figure (2) shows the measurement results of the number of particles. [Figure 8] Figure (3) shows the measurement results of the number of particles. [Figure 9] Figure (4) shows the measurement results of the number of particles. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Plasma Processing Equipment] Referring to Figure 1, the plasma processing apparatus 1 according to the embodiment will be described. Figure 1 is a schematic cross-sectional view showing the plasma processing apparatus 1 according to the embodiment.

[0010] The plasma processing apparatus 1 comprises a processing vessel 10 and a plasma source 2. The processing vessel 10 has a substantially cylindrical shape. The processing vessel 10 is made of a metal material such as aluminum and is airtight. The processing vessel 10 is grounded. The plasma source 2 introduces microwaves of a predetermined power into the processing vessel 10 to form a surface wave plasma. The top plate 10a of the processing vessel 10 is made of a metal body into which a plurality of dielectric members (hereinafter referred to as dielectric windows 56) of a microwave radiation mechanism 42 are fitted. As a result, the plasma source 2 introduces microwaves into the processing vessel 10 through the plurality of dielectric windows 56 of the top plate 10a.

[0011] The plasma processing apparatus 1 has a control unit 90. The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control unit 90 performs various control operations described in this specification by executing instruction codes stored in memory or by circuit design for special applications.

[0012] Inside the processing container 10, a mounting base 11 is supported by a cylindrical support member 12 via an insulating member 12a at the center of the bottom of the processing container 10. The mounting base 11 horizontally supports the substrate W. The materials constituting the mounting base 11 and the support member 12 are, for example, metals such as aluminum with anodized (anodic oxidation) surfaces, or insulating materials (ceramics, etc.) having high-frequency electrodes inside.

[0013] The mounting table 11 is equipped with a temperature control mechanism, a gas channel for supplying heat transfer gas to the back surface of the substrate W, and pins that move up and down to transport the substrate W. The mounting table 11 may also be equipped with an electrostatic chuck for electrostatically adsorbing the substrate W.

[0014] A DC power supply 14 is connected to the mounting table 11. By supplying a DC voltage from the DC power supply 14 to the mounting table 11, ions in the plasma are drawn to the substrate W side, contributing to film quality improvement and in-plane uniformity of substrate W processing. A high-frequency power supply may be connected instead of the DC power supply 14. The DC power supply 14 or the high-frequency power supply may not be connected.

[0015] An exhaust pipe 15 is connected to the bottom of the processing vessel 10. An exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15. By operating the exhaust device 16, the inside of the processing vessel 10 can be evacuated, and the inside of the processing vessel 10 can be depressurized and set to a predetermined pressure. An inlet / outlet 17 for carrying in and out the substrate W and a gate valve 18 for opening and closing the inlet / outlet 17 are provided in the side wall portion 10b of the processing vessel 10.

[0016] The plasma processing apparatus 1 includes a first gas shower unit 21, a second gas shower unit 22, and a third gas shower unit 23. The first gas shower unit 21 discharges a predetermined gas from the top plate 10a of the processing vessel 10 into the processing vessel 10. The second gas shower unit 22 introduces gas from a position between the top plate 10a and the mounting table 11. The third gas shower unit 23 introduces gas from a position between the top plate 10a and the mounting table 11 inside the processing vessel 10 and outside the second gas shower unit 22.

[0017] The first gas shower unit 21 and the second gas shower unit 22 are shown at positions shifted in the radial direction for convenience in FIG. 1, but are alternately provided on the same circle. The first gas shower unit 21 is provided on the top plate 10a of the processing vessel 10 and supplies the gas carried through the gas line 82 from the gas supply unit 81 from the first position. The second gas shower unit 22 is provided on the top plate 10a of the processing vessel 10 and supplies the gas carried through the gas line 83 from the gas supply unit 81 from the second position lower than the first position. The third gas shower unit 23 is provided on the side wall portion 10b of the processing vessel 10 and supplies the gas carried through the gas line 84 from the gas supply unit 81 from the third position lower than the first position.

[0018] The plasma source 2 includes a microwave output unit 30 that distributes microwaves to a plurality of paths and outputs them, and a microwave transmission unit 40 that transmits the microwaves output from the microwave output unit 30.

[0019] The microwave output unit 30 includes a microwave power source, a microwave oscillator, an amplifier, and a distributor. The microwave power source supplies power to the microwave oscillator. The microwave oscillator oscillates microwaves of a predetermined frequency (for example, 860 MHz) by, for example, PLL oscillation. The amplifier amplifies the oscillated microwaves. The distributor distributes the microwaves amplified by the amplifier while matching the impedance between the input side and the output side so that loss of microwaves is minimized. As the frequency of the microwaves, in addition to 860 MHz, various frequencies in the range of 700 MHz to 3 GHz such as 915 MHz can be used.

[0020] The microwave transmission unit 40 includes a plurality of amplifier units 41 and a plurality of microwave radiation mechanisms 42 provided corresponding to the amplifier units 41. The microwave radiation mechanisms 42 are arranged, for example, one at the center of the top plate 10a and six at equal intervals on the circumference centered on the one at the center, for a total of seven. In this example, they are arranged such that the distance between the central microwave radiation mechanism 42 and the outer peripheral microwave radiation mechanisms 42 is equal to the distance between the outer peripheral microwave radiation mechanisms 42.

[0021] The amplifier unit 41 amplifies the microwaves distributed by the distributor and guides them to each microwave radiation mechanism 42. The microwave radiation mechanism 42 has a coaxial tube 51. The coaxial tube 51 has a coaxial microwave transmission path composed of a cylindrical outer conductor 51a and a rod-shaped inner conductor 51b provided at its center. The microwave radiation mechanism 42 has a feeding antenna (not shown) that feeds the microwaves amplified by the amplifier unit 41 to the coaxial tube 51. The microwave radiation mechanism 42 has a tuner that matches the impedance of the load to the characteristic impedance of the microwave power source and an antenna unit that radiates the microwaves from the coaxial tube into the processing container 10.

[0022] The antenna section is located at the lower end of the coaxial tube 51 and is fitted into the metal portion of the top plate 10a of the processing container 10. The antenna section has a dielectric window 56, and microwaves transmitted through the dielectric window 56 generate surface wave plasma in the processing container 10 directly below the dielectric window 56.

[0023] Multiple plasma sources 2 (dielectric windows 56) are provided: one in the center of the ceiling and six on the outer periphery. Each of the multiple plasma sources 2 (dielectric windows 56) can independently control the microwave power supplied from each plasma source 2. The microwave power supplied from the plasma sources 2 (dielectric windows 56) on the outer periphery may be higher, lower, or the same as the microwave power supplied from the plasma source 2 in the center.

[0024] The surface of the top plate 10a inside the processing container 10 is covered with a thermal spray coating SF. The thermal spray coating SF is formed from a plasma-resistant material. The plasma-resistant material may be a ceramic material such as yttria (Y2O3). The thermal spray coating SF protects the surface of the top plate 10a inside the processing container 10 from plasma during plasma processing and reduces the generation of particles caused by the metal material such as aluminum that makes up the top plate 10a. The surface of the second gas shower section 22 is also covered with a thermal spray coating SF, similar to the surface of the top plate 10a inside the processing container 10.

[0025] However, it is difficult to completely cover the surface of the top plate 10a inside the processing container 10 with the thermal spray coating SF. For example, there may be exposed areas where the metal material is not covered with the thermal spray coating SF, such as the edges of the top plate 10a inside the processing container 10 (region A1 in Figure 1) and the boundary between the top plate 10a and the dielectric window 56 (region A2 in Figure 1). During plasma processing, particles originating from metal materials such as aluminum are generated starting from these exposed areas. In particular, particle generation is likely to occur when the top plate 10a is new and the plasma processing is performed using high-power microwaves.

[0026] One method to reduce particle generation is to stabilize the surface inside the processing container 10 by alternately repeating a pre-coating process and a cleaning process. However, this method requires a long time to stabilize the surface inside the processing container 10.

[0027] The following describes a method for stabilizing the plasma processing apparatus 1, which can stabilize the surface inside the processing container 10 in a short time.

[0028] [Method for stabilizing plasma processing equipment] Referring to Figures 2 and 3, a method for stabilizing the plasma processing apparatus 1 according to the embodiment will be described. Figure 2 is a diagram showing a method for stabilizing the plasma processing apparatus 1 according to the embodiment. Figure 3 is a diagram showing an example of dummy processing.

[0029] The stabilization method for the plasma processing apparatus 1 according to this embodiment is performed, for example, after the top plate 10a has been replaced with a new one, and before plasma processing is performed on the product substrate in the processing container 10. The plasma processing on the product substrate is a process in which a silicon nitride film is formed on the product substrate by, for example, atomic layer deposition (ALD) or chemical vapor deposition (CVD) using plasma. The stabilization method for the plasma processing apparatus 1 according to this embodiment comprises steps S1 to S4 shown in Figure 2.

[0030] In step S1, the control unit 90 controls the plasma processing apparatus 1 to perform a dummy process. The dummy process has steps S11 to S14 shown in Figure 3.

[0031] In step S11, the control unit 90 supplies microwaves of first power into the processing container 10 and performs a first film deposition process in which a first film is formed on the surface inside the processing container 10 by plasma generated from the first film deposition gas using microwaves of first power. The purpose of the first film deposition process is to ensure close contact between the side walls inside the processing container 10 and the silicon nitride film, and conditions are used that make it difficult for particles to be generated due to insufficient adhesion of the silicon nitride film. For this reason, the conditions for the first film deposition process are different from those for the plasma treatment of the product substrate. The first film deposition gas may contain a silicon-containing gas and a nitrogen-containing gas. In this case, a silicon nitride film can be formed as the first film. The silicon-containing gas may be supplied from at least one of the second gas shower section 22 and the third gas shower section 23. By supplying the silicon-containing gas from a second position and / or a third position lower than the first position of the first gas shower section 21, excessive dissociation of the silicon-containing gas can be reduced. The silicon-containing gas is, for example, monosilane gas. Furthermore, for example, the silicon-containing gas may be disilane gas. The nitrogen-containing gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The nitrogen-containing gas may be, for example, ammonia gas. Furthermore, for example, the nitrogen-containing gas may be nitrogen gas.

[0032] In step S12, the control unit 90 supplies microwaves of second power into the processing container 10 and performs a second film deposition process in which a second film is formed on the surface inside the processing container 10 by plasma generated from the second film deposition gas using microwaves of second power. The purpose of the second film deposition process is to stabilize the silicon nitride film deposited on the product substrate. For this reason, the conditions for the second film deposition process are the same as those for the plasma treatment of the product substrate. The second film deposition gas may contain a silicon-containing gas and a nitrogen-containing gas. In this case, a silicon nitride film can be formed as the second film. The silicon-containing gas may be supplied from at least one of the second gas shower section 22 and the third gas shower section 23. By supplying the silicon-containing gas from a second position and / or a third position lower than the first position of the first gas shower section 21, excessive dissociation of the silicon-containing gas can be reduced. The silicon-containing gas is, for example, monosilane gas. Alternatively, for example, the silicon-containing gas may be disilane gas. The nitrogen-containing gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The nitrogen-containing gas is, for example, ammonia gas. Alternatively, the nitrogen-containing gas may be nitrogen gas.

[0033] In step S13, the control unit 90 supplies microwaves of third power into the processing container 10 and performs a cleaning process in which the inside of the processing container 10 is cleaned by plasma generated from the cleaning gas using microwaves of third power. The cleaning gas contains a halogen-containing gas. The halogen-containing gas may be supplied from the first gas shower unit 21. By supplying the halogen-containing gas from the first gas shower unit 21, the dissociation of the halogen-containing gas can be promoted. The halogen-containing gas is, for example, nitrogen trifluoride gas.

[0034] In step S14, the control unit 90 determines whether steps S11 to S13 have been performed a first time. If the number of executions has not reached the first time (NO in step S14), the control unit 90 performs steps S11 to S13 again. If the number of executions has reached the first time (YES in step S14), the control unit 90 terminates the dummy processing and proceeds to step S2. In this way, the control unit 90 controls the plasma processing apparatus 1 to repeat steps S11 to S13 until the number of executions reaches the first time. The first time is, for example, two or more times. The first time may be one time.

[0035] In step S2, the control unit 90 performs a seasoning process by supplying plasma generated from the seasoning gas into the processing container 10 using microwaves of the fourth power. The seasoning process may be performed under conditions that result in a higher electron temperature and higher electron density than the plasma treatment on the product substrate. The seasoning gas includes a hydrogen-containing gas and an inert gas. The hydrogen-containing gas and the inert gas may be supplied from at least one of the first gas shower section 21, the second gas shower section 22, and the third gas shower section 23. The hydrogen-containing gas is, for example, ammonia gas. Alternatively, for example, the hydrogen-containing gas may be hydrogen gas. The inert gas is, for example, argon gas. In this case, a high electron temperature and high electron density are easily obtained. Alternatively, for example, the inert gas may be helium gas or nitrogen gas. The seasoning gas does not necessarily have to contain an inert gas.

[0036] In step S3, the control unit 90 determines whether steps S1 and S2 have been performed a second time. If the number of executions has not reached the second time (NO in step S3), the control unit 90 performs steps S1 and S2 again. If the number of executions has reached the second time (YES in step S3), the control unit 90 proceeds to step S4. In this way, the control unit 90 controls the plasma processing apparatus 1 to repeat steps S1 and S2 until the number of executions reaches the second time. The second time is, for example, two or more times. The second time may be one time.

[0037] In step S4, the control unit 90 controls the plasma processing apparatus 1 to perform a dummy process. The dummy process in step S4 may be the same as the dummy process in step S1. After performing the dummy process in step S4, the control unit 90 terminates the process.

[0038] Next, with reference to Figures 4 and 5, the effects of the seasoning treatment in the stabilization method of the plasma processing apparatus 1 according to the embodiment will be explained. Figures 4 and 5 are enlarged views of the boundary between the top plate 10a and the dielectric window 56 (region A2 in Figure 1). Figure 4 is a schematic cross-sectional view showing the top plate 10a without seasoning treatment. Figure 5 is a schematic cross-sectional view showing the top plate 10a with seasoning treatment.

[0039] As shown in Figure 4, the top plate 10a that has not undergone seasoning treatment may have protrusions 10c due to variations in processing. If the protrusions 10c are located in the narrow gap between the top plate 10a and the dielectric window 56, the protrusions 10c may be exposed without being covered by the thermal spray film SF. In this case, it is thought that a discharge will occur starting from the protrusions 10c during plasma treatment, generating particles originating from metallic materials such as aluminum.

[0040] As shown in Figure 5, when the seasoning process is performed in the processing container 10, the surface of the top plate 10a is flattened and the protrusions 10c disappear, preventing discharge originating from the protrusions 10c. Therefore, it is believed that the generation of particles caused by metal materials such as aluminum can be reduced.

[0041] As described above, the stabilization method for the plasma processing apparatus 1 according to the embodiment involves a seasoning treatment and a dummy treatment. In the seasoning treatment, the surface inside the processing container 10 is flattened. In the dummy treatment, radicals in the plasma (e.g., fluorine radicals) generated from the halogen-containing gas during the cleaning treatment halogenate (e.g., fluorine) the surface of the exposed parts inside the processing container 10, thereby stabilizing it. By combining these treatments, the surface inside the processing container 10 can be stabilized in a short time. In addition, variations in the time required for stabilization between plasma processing apparatuses 1 can be reduced.

[0042] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, a dummy treatment may be performed after the seasoning treatment. In this case, the surface area of ​​the exposed portion inside the processing container 10 can be reduced, and then the surface of the exposed portion can be fluorinated.

[0043] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, the dummy treatment may be performed first, rather than the seasoning treatment. In this case, the yttria constituting the thermal spray film SF reacts with the halogen-containing gas during the cleaning treatment included in the dummy treatment, and the surface of the thermal spray film SF is covered with a passivation film. Therefore, the thermal spray film SF is protected by the passivation film during the seasoning treatment, thus reducing damage to the thermal spray film SF.

[0044] According to the stabilization method of the plasma processing apparatus 1 according to the embodiment, the dummy treatment may be performed last of the seasoning treatment and dummy treatment. In this case, the yttria constituting the thermal spray film SF reacts with the halogen-containing gas, and the surface of the thermal spray film SF is covered with a passivation film. Therefore, the thermal spray film SF is protected by the passivation film when processing the product, and the generation of particles from the thermal spray film SF can be reduced.

[0045] In the above embodiment, a case was described in which the dummy process includes a first film formation process (step S11), a second film formation process (step S12), and a cleaning process (step S13), but it is not limited to this. For example, either the first film formation process or the second film formation process may be omitted.

[0046] [Experimental results] Referring to Figures 6 to 9, the following will be explained: After performing a stabilization method for the plasma processing apparatus 1 according to the embodiment, the number of particles on the substrate W was measured when plasma processing was performed on the substrate W using the plasma processing apparatus 1. The experimental conditions were as follows.

[0047] <Conditions for the first film formation process (step S11)> • First film formation gas: Monosilane gas + ammonia gas • Pressure inside processing container 10: 6 Pa to 100 Pa (for example, 10 Pa) • Microwave power (first power): 1.2kW~7.0kW (for example, 3.0kW) • Substrate temperature: 200℃~500℃ (for example, 400℃)

[0048] <Conditions for the second film deposition process (step S12)> • Second film formation gas: Monosilane gas + ammonia gas • Pressure inside processing container 10: 6 Pa to 100 Pa (for example, 10 Pa) • Microwave power (first power): 1.2kW~7.0kW (for example, 5.0kW) • Substrate temperature: 200℃~500℃ (for example, 400℃)

[0049] <Conditions for cleaning process (step S13)> • Cleaning gases: Mixture of nitrogen trifluoride and argon (NF3 / Ar), mixture of nitrogen trifluoride and helium (NF3 / He) • Pressure inside processing container 10: 6 Pa to 100 Pa (for example, 67 Pa) • Microwave power (first power): 1.2kW~7.0kW (for example, 3.0kW) • Substrate temperature: 200℃~500℃ (for example, 400℃)

[0050] <Conditions for seasoning process (step S2)> • Seasoning gases: Ammonia gas (NH3), a mixture of ammonia gas and argon gas (NH3 / Ar), a mixture of hydrogen gas and argon gas (H2 / Ar) • Pressure inside processing container 10: 6 Pa to 100 Pa (for example, 20 Pa) • Microwave power (first power): 1.2kW~7.0kW (for example, 5.0kW) • Substrate temperature: 200℃~500℃ (for example, 400℃)

[0051] <Number of repetitions> • First number of times: 1 to 30 times (for example, 10 times) • Second number of times: 1 to 10 times (for example, 5 times)

[0052] For comparison, the number of particles on the substrate W was measured after performing plasma treatment on the substrate W using the plasma processing apparatus 1, following a dummy treatment without seasoning treatment in the stabilization method of the plasma processing apparatus 1 according to the embodiment.

[0053] Figures 6 to 9 show the measurement results of the number of particles. Figure 6 shows the results when the seasoning gas is ammonia gas. Figure 7 shows the results when the seasoning gas is a mixture of ammonia gas and argon gas. Figure 8 shows the results when the seasoning gas is a mixture of hydrogen gas and argon gas. Figure 9 shows the results when no seasoning treatment is performed. In Figures 6 to 8, the horizontal axis shows the total time [h] for the seasoning treatment and dummy treatment, and the vertical axis shows the number of particles [particles] on the substrate W. In Figure 9, the horizontal axis shows the time [h] for the dummy treatment, and the vertical axis shows the number of particles [particles] on the substrate W.

[0054] As shown in Figure 6, when the seasoning gas is ammonia gas, it can be seen that the number of particles on the substrate W becomes almost zero after a total of 18 hours of seasoning and dummy processing time.

[0055] As shown in Figure 7, when the seasoning gas is a mixture of ammonia and argon gas, it can be seen that the number of particles on the substrate W becomes almost zero after a total seasoning and dummy treatment time of 12 hours.

[0056] As shown in Figure 8, when the seasoning gas is a mixture of hydrogen and argon gases, it can be seen that the number of particles on the substrate W becomes almost zero after a total seasoning and dummy treatment time of 11 hours.

[0057] As shown in Figure 9, when no seasoning process was performed, the number of particles was only about 14,000 even after 40 hours of dummy processing.

[0058] The results from Figures 6 to 9 above demonstrate that particle generation can be reduced in a short time by performing both seasoning and dummy treatments. This is thought to be due to the rapid stabilization of the surface inside the treatment container 10.

[0059] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0060] In the embodiments described above, the case in which the film formed on the product substrate is a silicon nitride (SiN) film was explained, but this disclosure is not limited thereto. For example, the film formed on the product substrate may be a SiCN film, a SiOCN film, a SiON film, a SiO2 film, or a silicon film. [Explanation of Symbols]

[0061] 1. Plasma processing equipment 10 Processing containers W board

Claims

1. The seasoning process involves supplying plasma generated from a seasoning gas containing hydrogen into a processing container, Perform dummy processing, It has, Performing the aforementioned dummy processing means A film deposition process is performed by supplying plasma generated from a film-forming gas into the processing container and forming a film on the surface inside the processing container. A cleaning process is performed by supplying plasma generated from a cleaning gas containing a halogen-containing gas into the processing container and cleaning the inside of the processing container. including, A method for stabilizing a plasma processing device.

2. The dummy processing includes repeating the film formation process and the cleaning process. A method for stabilizing a plasma processing apparatus according to claim 1.

3. The aforementioned film formation process includes performing a first film formation process to form a first film in the processing container under first conditions, and performing a second film formation process to form a second film in the processing container under second conditions different from the first conditions. A method for stabilizing a plasma processing apparatus according to claim 2.

4. The process includes performing the dummy process after performing the seasoning process. A method for stabilizing a plasma processing apparatus according to claim 1.

5. The dummy treatment is performed before the seasoning treatment. A method for stabilizing a plasma processing apparatus according to claim 1.

6. The process of performing the dummy processing and the seasoning processing is repeated. A method for stabilizing a plasma processing apparatus according to claim 1.

7. Of the two processes, the dummy process and the seasoning process, the dummy process is performed first. A method for stabilizing a plasma processing apparatus according to claim 6.

8. Of the two processes, the dummy process and the seasoning process, the dummy process is performed last. A method for stabilizing a plasma processing apparatus according to claim 6.

9. The hydrogen-containing gas is either hydrogen gas or ammonia gas. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

10. The seasoning gas further contains an inert gas. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

11. The aforementioned film deposition process is carried out under the same conditions as the plasma treatment on the product substrate. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

12. The aforementioned film-forming gas includes a silicon-containing gas and a nitrogen-containing gas. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

13. The halogen-containing gas is nitrogen trifluoride gas. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

14. The plasma processing apparatus is configured to introduce microwaves into the processing vessel through a dielectric window fitted into the top plate of the processing vessel. The stabilization method for the plasma processing apparatus is performed after the top plate has been replaced with a new one and before plasma processing is performed on the product substrate in the processing container. A method for stabilizing a plasma processing apparatus according to any one of claims 1 to 8.

15. Processing container and A gas supply unit that supplies gas into the processing container, A plasma source that introduces microwaves into the processing container, Control unit and Equipped with, The control unit, The process involves supplying plasma generated from a seasoning gas containing hydrogen into the aforementioned processing container to perform a seasoning treatment, Perform dummy processing, The gas supply unit and the plasma source are configured to control the operation, Performing the aforementioned dummy processing means A film deposition process is performed by supplying plasma generated from a film-forming gas into the processing container and forming a film on the surface inside the processing container. A cleaning process is performed by supplying plasma generated from a cleaning gas containing a halogen-containing gas into the processing container and cleaning the inside of the processing container. including, Plasma processing equipment.

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