High-frequency modules and communication devices

Abstract

The present invention provides a high-frequency module that can reduce interference between adjacent first and second communication bands and reduce degradation of communication quality. [Solution] The high-frequency module 1 comprises a first filter 7, 8, a second filter 9, a first switch 6, a second switch 10, and a first variable circuit element 12. The first filters 7, 8 have a first passband including a first communication band. The second filter 9 has a second passband including a second communication band. The first switch 6 selects the connection destination of each of the multiple antenna terminals 5a to 5c from the first ends 7b and 17a of the first filters 7, 8 and the second filter 9, respectively. The second switch 10 selects the connection destination of the second end 17b of the second filter 9 from the first power amplifier 14 and the first low-noise amplifier 15. The first variable circuit element 12 is connected between the second filter 9 and the second switch 10 and shifts the attenuation band on the first passband side in the second filter 9.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly, to a high-frequency module that processes a first TDD signal of a first communication band and a second TDD signal of a second communication band, and a communication device including the high-frequency module.

Background Art

[0002] The multiplexer described in Patent Document 1 includes a plurality of switches, a plurality of filters, a plurality of power amplifiers, and a plurality of low-noise amplifiers.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a front-end module such as the multiplexer described in Patent Document 1, generally, the plurality of filters include a filter for band 77 (n77, the first communication band) and a filter for band 79 (n79, the second communication band). n77 and n79 have adjacent communication bands. Therefore, when transmitting using n77 and receiving using n79 simultaneously, the transmission signal of n77 leaks to the reception path side for n79, and the reception sensitivity of n79 deteriorates. Further, when communicating using n79 alone, it is required to reduce the deterioration of the communication quality of n79.

[0005] In view of the above problems, an object of the present invention is to provide a high-frequency module and a communication device that can reduce interference between adjacent first and second communication bands and reduce deterioration of communication quality.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention processes a first TDD signal of a first communication band and a second TDD signal of a second communication band adjacent to the first communication band. The communication bandwidth of the first communication band is wider than the communication bandwidth of the second communication band. The high-frequency module comprises a first filter, a second filter, a first switch, a second switch, and a first variable circuit element. The first filter has a first passband including the first communication band. The second filter has a second passband including the second communication band. The first switch selects the connection destination of each of a plurality of antenna terminals from the first ends of the first and second filters, respectively. The second switch selects the connection destination of the second end of the second filter from a first power amplifier and a first low-noise amplifier. The first variable circuit element is connected inside the second filter, inside the second switch, or between the second filter and the second switch to shift the attenuation bandwidth on the first passband side of the second filter.

[0007] A communication device according to one aspect of the present invention comprises the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and processes high-frequency signals. [Effects of the Invention]

[0008] The high-frequency module and communication device according to the present invention have the advantage of reducing interference between adjacent first and second communication bands while reducing the degradation of communication quality. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a block diagram of a high-frequency module and communication device according to Embodiment 1. [Figure 2] Figure 2 is an explanatory diagram illustrating the frequency characteristics of the second filter provided in the high-frequency module described above. [Figure 3] Figure 3 is a block diagram of the high-frequency module and communication device according to Embodiment 2. [Figure 4] Figure 4 is a block diagram of the high-frequency module and communication device according to Embodiment 3. [Figure 5] Figure 5 is a magnified view of the main part of the high-frequency module shown above. [Figure 6] Figure 6 is a block diagram of the high-frequency module and communication device according to Embodiment 4. [Figure 7] Figure 7 is a block diagram of a high-frequency module and communication device according to a modified example of Embodiment 4. [Figure 8] Figure 8 is a cross-sectional view of a high-frequency module according to Embodiment 5. [Figure 9] Figure 9 is a plan view of the first main surface of the mounting substrate for the high-frequency module shown above, viewed from a direction perpendicular to the first main surface. [Modes for carrying out the invention]

[0010] (1) Embodiment 1 The high-frequency module 1 according to Embodiment 1 will be described in detail with reference to the drawings.

[0011] (1-1) Overview As shown in Figure 1, the high-frequency module 1 according to Embodiment 1 processes a first TDD (Time Division Duplex) signal of a first communication band (e.g., n77) and a second TDD signal of a second communication band (e.g., n79). The communication bandwidth of the first communication band is wider than the communication bandwidth of the second communication band. The high-frequency module 1 comprises first filters 7 and 8, a second filter 9, a first switch 6, a second switch 10, and a first variable circuit element 12. The first filters 7 and 8 each have first passbands 71 ​​and 81 that include the first communication band (see Figure 2). The second filter 9 has a second passband 91 that includes the second communication band (see Figure 2). The first switch 6 selects the connection destination of the first ends 7b and 17a of the first filters 7 and 8 and the second filter 9 from among a plurality of antenna terminals 5a to 5c. The second switch 10 selects the connection destination of the second end 17b of the second filter 9 from the power amplifier 14 (first power amplifier) ​​and the low-noise amplifier 15 (first low-noise amplifier). The first variable circuit element 12 is connected inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10 (in the example in Figure 1, it is connected between the second filter 9 and the second switch 10). The first variable circuit element 12 shifts the second attenuation band 93 (see Figure 2) on the side of the first passbands 71,81 in the second filter 9.

[0012] Here, the TDD signals (first TDD signal and second TDD signal) are signals that are processed by switching between transmission and reception in time-division duplex during transmission and reception. The first TDD signal is a TDD signal having a frequency within the first communication band. The second TDD signal is a TDD signal having a frequency within the second communication band.

[0013] With this configuration, the first variable circuit element 12 shifts the second attenuation band 93 on the first passband 71,81 side of the second filter 9, thereby reducing interference between adjacent first and second communication bands while reducing degradation of communication quality.

[0014] (1-2) Configuration of the communication device As shown in FIG. 1, the communication device 200 is a communication device including a high-frequency module 1. The communication device 200 is, for example, a mobile terminal (e.g., a smartphone), but is not limited to a mobile terminal and may be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module compatible with 4G (Fourth Generation Mobile Communication) standards and 5G (Fifth Generation Mobile Communication) standards. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project), or the LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0015] In addition to the high-frequency module 1, the communication device 200 further includes a signal processing circuit 2 and a plurality (three in the example of FIG. 1) of antennas 3. When distinguishing the three antennas 3, the three antennas 3 are described as the first antenna 3a, the second antenna 3b, and the third antenna 3c.

[0016] The high-frequency module 1 is configured to amplify a transmission signal (high-frequency signal) output from the signal processing circuit 2 and transmit it from one of the plurality of antennas 3. Further, the high-frequency module 1 is configured to amplify a reception signal (high-frequency signal) received by one of the plurality of antennas 3 and output it to the signal processing circuit 2. The high-frequency module 1 is, for example, controlled by the signal processing circuit 2.

[0017] The signal processing circuit 2 is connected to the high-frequency module 1 and processes high-frequency signals. More specifically, the signal processing circuit 2 is configured to process a transmission signal output to the high-frequency module 1. Further, the signal processing circuit 2 is configured to process a reception signal output from the high-frequency module 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 21 and a baseband signal processing circuit 22.

[0018] The RF signal processing circuit 21 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmission signals and reception signals). The RF signal processing circuit 21 performs signal processing such as up-converting the transmission signal output from the baseband signal processing circuit 22 and outputs it to the high-frequency module 1. Also, the RF signal processing circuit 21 performs signal processing such as down-converting the reception signal output from the high-frequency module 1 and outputs it to the baseband signal processing circuit 22.

[0019] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 generates a transmission signal from a baseband signal (for example, an audio signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 21. Also, the baseband signal processing circuit 22 outputs the reception signal output from the RF signal processing circuit 21 to the outside. This output signal (reception signal) can be used, for example, for image display as an image signal or for a call as an audio signal.

[0020] (1-3) Configuration of the high-frequency module 1 The high-frequency module 1 processes the first TDD signal of the first communication band and the second TDD signal of the second communication band. The communication bandwidth of the first communication band is wider than that of the second communication band. The second communication band is adjacent to the first communication band. Here, "the first communication band is adjacent to the second communication band" means that there are no other communication bands between the first and second communication bands. The first communication band is, for example, n77, and the transmission and reception bandwidths of the first communication band are the same frequency band, for example, 3300MHz to 4200MHz. The transmission and reception bandwidths of the first communication band are sometimes collectively referred to as the passband. The second communication band is, for example, n79, and the transmission and reception bandwidths of the second communication band are the same frequency band, for example, 4200MHz to 5000MHz. The transmission and reception bandwidths of the second communication band are sometimes collectively referred to as the passband. The first communication band is wideband, and the second communication band is narrowband.

[0021] As shown in Figure 1, the high-frequency module 1 includes, for example, a plurality of external terminals 5a to 5g, a first switch 6, a plurality (two in the example of Figure 1) of first filters 7 and 8, a second filter 9, a second switch 10, a variable matching circuit 11, a first variable circuit element 12, a plurality (two in the example of Figure 1) of power amplifiers 13 and 14, and a plurality (two in the example of Figure 1) of low-noise amplifiers 15 and 16. In the example of Figure 1, the first filter 8 and the second filter 9 constitute a duplexer 17.

[0022] (1-3-1) External terminals External terminal 5a is an antenna terminal connected to the first antenna 3a. External terminal 5b is an antenna terminal connected to the second antenna 3b. External terminal 5c is an antenna terminal connected to the third antenna 3c. External terminal 5d is connected to the output section of the signal processing circuit 2 and is an input terminal to which the first TDD signal of the first communication band output from the output section of the signal processing circuit 2 is input. External terminal 5e is connected to the output section of the signal processing circuit 2 and is an input terminal to which the second TDD signal of the second communication band output from the output section of the signal processing circuit 2 is input. External terminal 5f is connected to the input section of the signal processing circuit 2 and is an output terminal to which the first TDD signal of the second communication band processed by the high-frequency module 1 is output to the input section of the signal processing circuit 2. External terminal 5g is connected to the input section of the signal processing circuit 2 and is an output terminal to which the second TDD signal of the second communication band processed by the high-frequency module 1 is output to the input section of the signal processing circuit 2.

[0023] (1-3-2) Switch 1 6 The first switch 6 is, for example, an antenna switch. The first switch 6 is a switch for selecting the antenna to be used for transmission or reception from among a plurality of antennas 3. The first switch 6 is controlled by a control signal from a controller (not shown) in the high-frequency module 1. The first switch 6 is, for example, a switch IC (Integrated Circuit).

[0024] The first switch 6 has multiple (three in the example in Figure 1) common terminals 6a to 6c and multiple (two in the example in Figure 1) selectable terminals 6d and 6e. Each of the multiple common terminals 6a to 6c is selectively connected to one of the multiple selectable terminals 6d and 6e. The multiple common terminals 6a to 6c are each connected to multiple external terminals 5a to 5c. Selectable terminal 6d is connected to the output section 7b of the first filter 7. Selectable terminal 6e is connected to the first input / output section 17a of the duplexer 17.

[0025] (1-3-3) First filter 7 The first filter 7 is a transmission filter having a first passband that includes a first communication band (e.g., n77). The first filter 7 has an input section 7a and an output section 7b. The input section 7a is connected to the output section 13b of the power amplifier 13. The output section 7b is connected to the selection terminal 6d of the first switch 6. The first filter 7 removes signal components in bands other than the first passband from the transmission signal (first TDD signal) input to the input section 7a (i.e., passes signal components in the same band as the first passband), and outputs the transmission signal after removal from the output section 7b.

[0026] (1-3-4) Duplexa 17 The duplexer 17 has a first input / output section 17a, a second input / output section 17b, and an output section 17c. The first input / output section 17a is connected to the selection terminal 6e of the first switch 6. The second input / output section 17b is connected to the common terminal 10a of the second switch 10 via a variable matching circuit 11. The output section 17c is connected to the input section 16a of the low-noise amplifier 16.

[0027] The duplexer 17 comprises a first filter 8 and a second filter 9.

[0028] The first filter 8 is a receiving filter having a first passband that includes a first communication band (e.g., n77). The first filter 8 has the same configuration as the first filter 7. The first filter 8 has an input section and an output section. The input section of the first filter 8 is also used as the first input / output section 17a and is connected to the selection terminal 6e of the first switch 6. The output section of the first filter 8 is the output section 17c and is connected to the input section 16a of the low-noise amplifier 16. Hereafter, the input section and output section of the first filter 8 may be referred to as the input section 17a and the output section 17c, respectively. The first filter 8 removes signal components in bands other than the first passband from the received signal (first TDD signal) input to the input section 17a (i.e., passes signal components in the same band as the first passband), and outputs the received signal after removal from the output section 17c.

[0029] The second filter 9 is a dual-purpose filter for transmission and reception, having a second passband that includes a second communication band (e.g., n79). The second filter 9 has a first input / output section and a second input / output section. The first input / output section of the second filter 9 is shared with the first input / output section 17a and is connected to the selection terminal 6e of the first switch 6. The second input / output section 17b of the second filter 9 is connected to the common terminal 10a of the second switch 10 via a variable matching circuit 11. Hereafter, the first input / output section and the second input / output section of the second filter 9 may be referred to as the first input / output section 17a and the second input / output section 17b, respectively.

[0030] The second filter 9 removes signal components in bands other than the second passband from the received signal (second TDD signal) input to the first input / output unit 17a (i.e., allows signal components in the same band as the second passband to pass through), and outputs the removed received signal from the second input / output unit 17b. The second filter 9 also removes signal components in bands other than the second passband from the transmitted signal (second TDD signal) input to the second input / output unit 17b (i.e., allows signal components in the same band as the second passband to pass through), and outputs the removed transmitted signal from the first input / output unit 17a.

[0031] The second filter 9 has attenuation bands on both sides of the second passband. The attenuation band on the first passband side (the passband of the first filter 8) of the second filter 9 can be shifted to either the first passband side or the second passband side by changing the characteristic value (impedance) of the variable matching circuit 11, as described later.

[0032] (1-3-5) Second switch 10 The second switch 10 is a switch for selecting the connection destination of the second input / output section 17b (second end) of the second filter 9 from among the power amplifier 14 (first power amplifier) ​​and the low-noise amplifier 15 (first low-noise amplifier). In other words, the second switch 10 is a switch for switching the transmission and reception of the second filter 9 using time-division duplexing (TDD). The second switch 10 is controlled by a control signal from a controller (not shown). The second switch 10 is, for example, a switch IC (Integrated Circuit).

[0033] The second switch 10 has a common terminal 10a and multiple (two in the example in Figure 1) selectable terminals 10b and 10c. The common terminal 10a is selectively connected to one of the two selectable terminals 10b and 10c. The common terminal 10a is connected to the second input / output section 17b of the second filter 9 via the variable matching circuit 11. The selectable terminal 10b is connected to the output section 14b of the power amplifier 14. The selectable terminal 10c is connected to the input section 15a of the low-noise amplifier 15.

[0034] (1-3-6) Variable matching circuit 11 The variable matching circuit 11 is connected between the second filter 9 and the second switch 10 to perform impedance matching between the second filter 9 and the second switch 10. The variable matching circuit 11 is a matching circuit whose characteristic value (impedance) is variable. By changing the characteristic value of the variable matching circuit 11, the attenuation band on the first passband side (i.e., the passband of the first communication band) of the second filter 9 is shifted to either the first passband side or the second passband side (i.e., the passband of the second filter 9). The characteristic value of the variable matching circuit 11 is changed by a predetermined controller in the high-frequency module 1.

[0035] A first variable circuit element 12 is arranged inside the variable matching circuit 11. The first variable circuit element 12 is a circuit element whose characteristic value is variable, for example, a variable capacitor, a variable inductor, or a variable resistor. Alternatively, the first variable circuit element 12 may be a circuit composed of multiple circuit elements, including at least one variable circuit element whose characteristic value is variable. The characteristic value of the first variable circuit element 12 is a value that defines the characteristics related to the function of the circuit element; if the circuit element is a capacitor, it is a capacitance value; if the circuit element is an inductor, it is an inductance; and if the circuit element is a resistor, it is a resistance value. The characteristic value of the variable matching circuit 11 is changed by changing the characteristic value of the first variable circuit element 12. Therefore, the first variable circuit element 12 is a circuit element that shifts the first attenuation band on the first passband side of the second filter 9 to the first passband side or the second passband side.

[0036] More specifically, the characteristic value of the first variable circuit element 12 can be selected from, for example, one of two values ​​(a first characteristic value and a second characteristic value). When the characteristic value of the first variable circuit element 12 is the first characteristic value, the first attenuation band of the second filter 9 is shifted to the first passband side of the first communication band. Conversely, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the first attenuation band of the second filter 9 is shifted to the second passband side of the second communication band.

[0037] (1-3-7) Power amplifiers 13, 14 The power amplifier 13 amplifies the transmission signal (first TDD signal) of the first communication band. The power amplifier 13 has an input section 13a and an output section 13b. The input section 13a of the power amplifier 13 is connected to the external terminal 5d. The output section 13b of the power amplifier 13 is connected to the input section 7a of the first filter 7. The power amplifier 13 amplifies the transmission signal input to the input section 13a and outputs the amplified transmission signal from the output section 13b.

[0038] The power amplifier 14 amplifies the transmission signal (second TDD signal) of the second communication band. The power amplifier 14 has an input section 14a and an output section 14b. The input section 14a of the power amplifier 14 is connected to the external terminal 5e. The output section 14b of the power amplifier 14 is connected to the selection terminal 10b of the second switch 10. The power amplifier 14 amplifies the transmission signal input to the input section 14a and outputs the amplified transmission signal from the output section 14b.

[0039] (1-3-8) Low-noise amplifiers 15, 16 The low-noise amplifier 15 amplifies the received signal (second TDD signal) of the second communication band. The low-noise amplifier 15 has an input section 15a and an output section 15b. The input section 15a of the low-noise amplifier 15 is connected to the selection terminal 10c of the second switch 10. The output section 15b of the low-noise amplifier 15 is connected to the external terminal 5f. The low-noise amplifier 15 amplifies the received signal input to the input section 15a and outputs the amplified received signal from the output section 15b.

[0040] The low-noise amplifier 16 amplifies the received signal (first TDD signal) of the first communication band. The low-noise amplifier 16 has an input section 16a and an output section 16b. The input section 16a of the low-noise amplifier 16 is connected to the output section 17c of the first filter 8. The output section 16b of the low-noise amplifier 16 is connected to the external terminal 5g. The low-noise amplifier 16 amplifies the received signal input to the input section 16a and outputs the amplified received signal from the output section 16b.

[0041] (1-4) Details of the frequency characteristics of the second filter The frequency characteristics M2 of the second filter 9 will be explained with reference to Figure 2.

[0042] In Embodiment 1, the second passband 91 of the second filter 9 is located on the higher frequency side than the first passband 71 of the first filter 7.

[0043] First, the frequency characteristics M11 of the first filter 7 will be described. The frequency characteristics M11 of the first filter 7 have a first passband 71, a first transition band 72, and a first attenuation band 73. The first passband 71 is a frequency band that includes the first communication band (e.g., n77). The first transition band 72 is the transition band on the second passband 91 side of the first passband 71 and is located on the second passband 91 side of the first passband 71. The first boundary frequency K1 defines the boundary between the first passband 71 and the first transition band 72. The first attenuation band 73 is the attenuation band on the second passband 91 side of the first passband 71 and is located on the second passband 91 side of the first transition band 72.

[0044] Next, the frequency characteristics M2 of the second filter 9 will be described. The frequency characteristics M2 of the second filter 9 have a second passband 91, a second transition band 92, and a second attenuation band 93. The second passband 91 is a frequency band that includes the second communication band (e.g., n79). The second transition band 92 is the transition band on the first passband 71 side of the second passband 91 and is located on the first passband 71 side of the second passband 91. The second boundary frequency K2 defines the boundary between the second passband 91 and the second transition band 92. The second attenuation band 93 is the attenuation band on the first passband 71 side of the first passbands 71,81 and is located on the first passband 71 side of the second transition band 92.

[0045] In Embodiment 1, since the first communication band (e.g., n77) and the second communication band (e.g., n79) are adjacent to each other, the bandwidth K3 between the first passband 71 of the first filter 7 and the second passband 91 of the second filter 9 is relatively narrow. Therefore, within bandwidth K3, the first transition band 72 of the first filter 7 and the second transition band 92 of the second filter 9 overlap with each other.

[0046] The frequency response M2 of the second filter 9 is the frequency response of the second filter 9 when the characteristic value of the first variable circuit element 12 is the first characteristic value. The frequency response M2a in Figure 2 is the frequency response of the second filter 9 when the characteristic value of the first variable circuit element 12 is the second characteristic value.

[0047] The frequency response M2a of the second filter 9 is the frequency response obtained by shifting the frequency response M2 of the second filter 9 towards the second passband 91. More specifically, the frequency response M2a of the second filter 9 has a second passband 91a, a second transition band 92a, and a second attenuation band 93a.

[0048] The second passband 91a is a frequency band that includes the second communication band. The second transition band 92a is the transition band on the first passband 71 side of the second passband 91a and is located on the first passband 71 side of the second passband 91a. The second attenuation band 93a is the attenuation band on the first passband 71 side of the second passband 91a and is located on the first passband 71 side of the second transition band 92a.

[0049] The frequency response M2a of the second filter 9 after the band shift is shifted towards the second passband 91 compared to the frequency response M2 before the band shift. As a result, the second transition band 92a after the band shift is shifted towards the second passband 91 compared to the second transition band 92 before the band shift, and the second attenuation band 93a after the band shift is shifted towards the second passband 91 (higher frequency side) compared to the second attenuation band 93 before the band shift. As a result, the overlap between the first transition band 72 of the first filter 7 and the second transition band 92a after the band shift within band K3 is reduced compared to the second transition band 92 before the band shift. Consequently, the interference between the frequency response M11 of the first filter 7 and the second transition band 92a after the band shift is reduced within band K3 compared to the frequency response M2 before the band shift.

[0050] Furthermore, the second transition band 92a after the bandwidth shift is shifted towards the second passband 91 side (higher frequency side) than the second boundary frequency K2. As a result, the second passband 91a after the bandwidth shift is narrower than the second passband 91 before the bandwidth shift. Consequently, the pass loss (also called insertion loss) when the TDD signal passes through the second filter 9 increases in the frequency characteristic M2a after the bandwidth shift compared to the frequency characteristic M2 before the bandwidth shift.

[0051] In other words, the frequency response M2 of the second filter 9 before the bandwidth shift shows increased interference with the frequency response M11 of the first filter 7 within bandwidth K3 compared to the frequency response M2a after the bandwidth shift. Also, the pass loss (also called insertion loss) when the second TDD signal passes through the second filter 9 is reduced in the frequency response M2 before the bandwidth shift compared to the frequency response M2a after the bandwidth shift.

[0052] In other words, in Embodiment 1, when the characteristic value of the first variable circuit element 12 is the first characteristic value, the second attenuation band 93 on the first passband 71 side of the second filter 9 shifts to the first passband 71 side. In this case, the insertion loss of the second filter 9 is reduced and interference with the first filter 7 increases. On the other hand, when the characteristic value of the first variable circuit element 12 is the second characteristic value, the second attenuation band 93 on the first passband 71 side of the second filter 9 shifts to the second passband 91 side. In this case, the insertion loss of the second filter 9 increases and bandwidth interference with the first filter 7 decreases.

[0053] In Embodiment 1, the frequency characteristic M2a of the second filter 9 after band shifting is formed, for example, by combining the frequency characteristic Q1 of a resonant circuit (not shown) with the frequency characteristic M2 before band shifting. The resonant circuit is a resonant circuit that attenuates a specific frequency (resonant frequency), and is, for example, a notch filter. The peak frequency (resonant frequency) fp of the frequency characteristic Q1 of the resonant circuit is set between the null point N2 of the frequency characteristic M2 of the second filter 9 and the second passband 91.

[0054] In other words, the first variable circuit element 12 includes a resonant circuit. When the characteristic value of the first variable circuit element 12 is the first characteristic value, the resonant circuit is disabled, and as a result, the frequency characteristic M2 of the second filter 9 does not change. When the characteristic value of the first variable circuit element 12 is the second characteristic value, the resonant circuit is enabled, and as a result, the frequency characteristic M2 before the change and the frequency characteristic Q1 of the resonant circuit are combined, and the frequency characteristic M2 of the second filter 9 changes to frequency characteristic M2a.

[0055] The notch filter described above is an example of a resonant circuit that attenuates a specific frequency (for example, a specific frequency between the null point N2 and the second passband 91).

[0056] In the above explanation, the frequency characteristic M2 of the second filter 9 was described based on the relationship between the frequency characteristic M2 of the second filter 9 and the frequency characteristic M11 of the first filter 7. As previously stated, the two first filters 7 and 8 have the same configuration. Therefore, the frequency characteristic M12 of the first filter 8 is the same as the frequency characteristic M11 of the first filter 7. That is, the frequency characteristic M12 of the first filter 8 has a first passband 81, a first transition band 82, and a first attenuation band 83. The first passband 81, first transition band 82, and first attenuation band 83 of the first filter 8 are the same as the first passband 71, first transition band 72, and first attenuation band 73 of the first filter 7, respectively. That is, when the characteristic value of the first variable circuit element 12 is the first characteristic value, the second attenuation band 93 on the first passband 81 side of the second filter 9 shifts to the first passband 81 side. In this case, the insertion loss of the second filter 9 is reduced and the bandwidth interference with the first filter 8 increases. On the other hand, if the characteristic value of the first variable circuit element 12 is the second characteristic value, the second attenuation band 93 on the first passband 81 side of the second filter 9 shifts to the second passband 91 side. In this case, the insertion loss of the second filter 9 increases and the bandwidth interference with the first filter 8 decreases.

[0057] (1-5) Operation of the high-frequency module 1 The operation of the high-frequency module 1 will be explained with reference to Figure 1. (1-5-1) Operation when communicating using the second communication band alone The operation when receiving the second communication band independently (first case) will be explained. In the first case, in the first switch 6, for example, the common terminal 6b is connected to the selection terminal 6e, and the remaining common terminals 6a and 6c are not connected to the selection terminals 6d and 6e. Also, in the second switch 10, the common terminal 10a is connected to the selection terminal 10c. Furthermore, the characteristic value of the first variable circuit element 12 takes the first characteristic value, and the frequency characteristic M2 of the second filter 9 (see Figure 2) is maintained at frequency characteristic M2. In this state, when the antenna 3 receives the received signal of the second TDD signal, the received signal is output to the signal processing circuit 2 from the external terminal 5f via the first switch, second filter 9, variable matching circuit 11, second switch 10, and low-noise amplifier 15. At that time, since the frequency characteristic M2 of the second filter 9 is maintained at frequency characteristic M2, the insertion loss when the received signal of the second TDD signal passes through the second filter 9, in particular the loss of the received signal in the second transition band 92a, is reduced. In other words, it is possible to improve the communication quality when the second TDD signal is transmitted independently.

[0058] Furthermore, even when transmitting using the second communication band alone, the characteristic value of the first variable circuit element 12 is set to the first characteristic value, and the frequency characteristic M2 of the second filter 9 is maintained as frequency characteristic M2, similar to the first case described above. Therefore, the insertion loss when the transmitted signal of the second TDD signal passes through the second filter 9 is reduced in the same way as in the case described above, and in particular the loss of the transmitted signal in the second transition band 92a can be reduced.

[0059] (1-5-2) Operation when communicating simultaneously on the first and second communication bands The operation in the case where transmission using the first communication band and reception using the second communication band are performed simultaneously (the second case) will be explained. In the first switch 6, for example, common terminal 6a is connected to selection terminal 6d, common terminal 6b is connected to selection terminal 6e, and the remaining common terminal 6c is not connected to selection terminals 6d and 6e. Also, in the second switch 10, common terminal 10a is connected to selection terminal 10c. Furthermore, the characteristic value of the first variable circuit element 12 is set to the second characteristic value, and the frequency characteristic M2 of the second filter 9 is changed to frequency characteristic M2a (see Figure 2).

[0060] In this state, when antenna 3 receives the reception signal of the second TDD signal, the received signal is output to the signal processing circuit 2 from external terminal 5f via the first switch 6, second filter 9, variable matching circuit 11, second switch 10, and low-noise amplifier 15. Simultaneously with this reception, the transmission signal of the first TDD signal is input from signal processing circuit 2 to external terminal 5d. The transmission signal is then transmitted externally from antenna 3 via external terminal 5d, power amplifier 13, first filter 7, and first switch 6.

[0061] At this time, a portion of the transmission signal of the first TDD signal leaks from the selection terminal 6e of the first switch 6 to the second filter 9. However, as described above, when the characteristic value of the first variable circuit element 12 is set to the second characteristic value, the frequency characteristic M2 of the second filter 9 is changed to the frequency characteristic M2a (see Figure 2). Therefore, interference between signals passing through the bandwidth between the frequency characteristic M2a of the second filter 9 and the frequency characteristic M11 of the first filter 7 (first transition band 72 and second transition band 92) is reduced. Consequently, the amount of the transmission signal of the first TDD signal passing through the second filter 9 can be reduced. As a result, interference between the received signal of the second TDD signal that has passed through the second filter 9 and the transmission signal of the first TDD signal can be reduced. In other words, the degradation of the receiving sensitivity when receiving the second TDD signal can be reduced, and the communication quality can be improved.

[0062] Furthermore, when receiving using the first communication band and transmitting using the second communication band simultaneously, the first filter 8 is used as the receiving filter and the second filter 9 is used as the transmitting filter. In this case as well, as in the second case, the characteristic value of the first variable circuit element 12 is set to the second characteristic value, and the frequency characteristic M2 of the second filter 9 is changed to the frequency characteristic M2a. That is, interference between the transmitted signal of the second communication band passing through the second transition band 92 of the second filter 9 and the received signal of the first communication band passing through the first transition band 82 of the first filter 8 is reduced. Therefore, it is possible to reduce the amount of the transmitted signal of the second communication band passing through the second filter 9. As a result, it is possible to reduce the amount of the transmitted signal of the second communication band passing through the second filter 9 and mixing into the receiving path of the first communication band. In other words, it is possible to reduce the deterioration of the receiving sensitivity when receiving in the first communication band and improve communication quality.

[0063] (1-6) Effects The high-frequency module 1 according to Embodiment 1 processes a first TDD signal of a first communication band and a second TDD signal of a second communication band adjacent to the first communication band. The communication bandwidth of the first communication band is wider than the communication bandwidth of the second communication band. The high-frequency module 1 comprises first filters 7 and 8, a second filter 9, a first switch 6, a second switch 10, and a first variable circuit element 12. The first filters 7 and 8 have first passbands 71 ​​and 81 that include the first communication band. The second filter 9 has a second passband 91 that includes the second communication band. The first switch 6 selects the connection destination of each of the multiple antenna terminals 5a to 5c from the first ends 7b and 17a of the first filters 7 and 8 and the second filter 9, respectively. The second switch 10 selects the connection destination of the second end 17b of the second filter 9 from the first power amplifier 14 and the first low-noise amplifier 15. The first variable circuit element 12 is connected inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10, and shifts the second attenuation band 93 on the side of the first passband 71,81 in the second filter 9.

[0064] With this configuration, the first variable circuit element 12 shifts the second attenuation band 93 on the first passband 71,81 side of the second filter 9, thereby reducing interference between signals in adjacent first and second communication bands and reducing degradation of communication quality.

[0065] More specifically, when transmitting using the first communication band and receiving using the second communication band are performed simultaneously, or when receiving using the first communication band and transmitting using the second communication band are performed simultaneously, the first variable circuit element 12 shifts the second attenuation band 93 on the first passband 71,81 side of the second filter 9 to the second passband 91 side. This reduces leakage of the transmitted signal from the first or second communication band into the receiving path. As a result, signal interference between the first and second communication bands can be reduced. Furthermore, when communication using the first or second communication band is performed individually, the first variable circuit element 12 is not varied, and the filter characteristics are maintained. This reduces the insertion loss when the second TDD signal passes through the second filter 9. As a result, the degradation of communication quality in the first and second communication bands can be reduced.

[0066] Furthermore, the high-frequency module 1 according to Embodiment 1 further comprises a variable matching circuit 11. The variable matching circuit 11 is connected between the second filter 9 and the second switch 10. The first variable circuit element 12 is located inside the variable matching circuit 11.

[0067] This configuration reduces the number of components and eliminates the need to secure a new location for the first variable circuit element 12.

[0068] The communication device 200 according to Embodiment 1 comprises a high-frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency module 1 and processes high-frequency signals.

[0069] This configuration makes it possible to provide a communication device 200 that utilizes the effects of the high-frequency module 1.

[0070] (1-7) Variations A modified example of Embodiment 1 will now be described. In Embodiment 1, the first variable circuit element 12 is exemplified as being located inside the variable matching circuit 11. However, the first variable circuit element 12 is not limited to being located inside the variable matching circuit 11, but may be located inside the second filter 9, inside the second switch 10, or between the second filter 9 and the second switch 10. When the first variable circuit element 12 is located inside the second filter 9, the first variable circuit element 12 may be configured by replacing one of the multiple circuit components (capacitors, capacitors, and inductors) provided in the second filter 9 with a variable circuit component whose characteristic value is variable. This modification can also achieve the same effects as Embodiment 1.

[0071] (2) Embodiment 2 Referring to Figure 3, the high-frequency module 1 according to Embodiment 2 will be described.

[0072] (2-1) Composition The high-frequency module 1 according to Embodiment 2 differs from the high-frequency module 1 according to Embodiment 1 in that it includes a variable filter, the second filter 20, instead of the second filter 9. Hereinafter, the same components as in Embodiment 1 will be denoted by the same reference numerals, and the description will focus on the components that differ from Embodiment 1.

[0073] The second filter 20 is a variable filter in which, in the second filter 9 of Embodiment 1, at least some of the circuit elements among the plurality of circuit elements of the second filter 9 are replaced with variable circuit elements (second variable circuit elements 23). That is, the second filter 20 includes the second variable circuit elements 23.

[0074] The second variable circuit element 23 is, for example, a variable capacitor, a variable inductor, or a variable resistor.

[0075] The frequency characteristics of the second filter 20 are changed by changing the characteristic value of the second variable circuit element 23. The characteristic value of the second filter 20 is changed by changing the characteristic value of the second variable circuit element 23. The characteristic value of the second variable circuit element 23 is controlled by a controller (not shown).

[0076] The second filter 20, like the second filter 9 of Embodiment 1, has a second passband, a second transition band, and a second attenuation band. The second passband includes a second communication band. The second transition band is the transition band on the side of the second passband that is the first passband (the passband of the first filter 7). The second attenuation band is the attenuation band on the side of the second passband that is the first passband (the passband of the first filter 7). By changing the characteristic value of the second variable circuit element 23, the second filter 20 selectively moves one or two of the second passband, second transition band, and second attenuation band of the second filter 20 closer to and further away from the first passband of the first filter 7.

[0077] More specifically, the frequency characteristics of the second filter 20 are shifted to either the first passband or the second passband by changing the characteristic value of the first variable circuit element 12, similar to the frequency characteristics of the second filter 9 in Embodiment 1. At this time, the frequency characteristics of the second filter 20 are finely adjusted by selectively shifting the second passband, second transition band, or second attenuation band of the second filter 20 by changing the characteristic value of the second variable circuit element 23.

[0078] More specifically, when communication (e.g., reception) is performed using the second communication band alone, if the characteristic value of the first variable circuit element 12 is set to the first characteristic value, the frequency characteristics of the second filter 20 as a whole (i.e., all of the second passband, second transition band, and second attenuation band) are shifted towards the first passband, similar to the frequency characteristics M2 of the second filter 9 in Embodiment 1 (see Figure 2). In this case, by further changing the characteristic value of the second variable circuit element 23, the second passband of the second filter 20 is not shifted, while only the second attenuation band and second transition band of the second filter 20 are selectively shifted (i.e., returned) towards the second passband. As a result, of the frequency characteristics of the second filter 20, only the second passband is shifted towards the first passband, as shown by the second passband 91 in Figure 2, while the second transition band and second attenuation band are maintained towards the second passband, as shown by the second transition band 92a and second attenuation band 93a in Figure 2. As a result, when the second communication band is used for communication (e.g., reception) independently, the insertion loss when the second TDD signal (received) passes through the second filter 20 can be reduced, similar to the first case in the operation description of Embodiment 1. Furthermore, interference of unwanted signals with the received signal of the second TDD signal can be reduced, thereby improving communication quality.

[0079] Furthermore, when communication using the first communication band (e.g., transmission) and communication using the second communication band (e.g., reception) are performed simultaneously, if the characteristic value of the first variable circuit element 12 is set to the second characteristic value, the frequency characteristics of the second filter 20 are shifted overall (i.e., all of the second passband, second transition band, and second attenuation band) towards the second passband, similar to the frequency characteristics M2a of the second filter 9 in Embodiment 1 (see Figure 2). In this case, by further changing the characteristic value of the second variable circuit element 23, the second transition band and second attenuation band of the second filter 20 are not shifted, and only the second passband of the second filter 20 is selectively shifted (i.e., returned) towards the first passband. As a result, of the frequency characteristics of the second filter 20, only the second transition band and second attenuation band are shifted towards the first passband, as shown by the second transition band 92a and second attenuation band 93a in Figure 2, while the second passband is maintained towards the first passband, as shown by the second passband 91 in Figure 2. As a result, when communication using the first communication band (e.g., transmission) and communication using the second communication band (e.g., reception) are performed simultaneously, similar to the second case in the operation description of Embodiment 1, it is possible to reduce the amount of the first TDD signal (transmitted signal) mixed into the second TDD signal when the second TDD signal (received signal) passes through the second filter 20. Furthermore, insertion loss when the second TDD signal (received signal) passes through the second filter 20 can be reduced.

[0080] (2-2) Effects The high-frequency module 1 according to Embodiment 2 further comprises a second variable circuit element 23. The second variable circuit element 23 constitutes a variable circuit element of the second filter 20, which is a variable filter. With this configuration, since it comprises the first variable circuit element 12 and the second variable circuit element 23, interference between adjacent first and second communication bands can be reduced even further, and the deterioration of communication quality can be reduced.

[0081] (3) Embodiment 3 The high-frequency module 1 according to Embodiment 3 will be described with reference to Figures 4 and 5.

[0082] (3-1) Composition As shown in Figure 4, the high-frequency module 1 according to Embodiment 3 is configured similarly to the high-frequency module 1 according to Embodiment 2, except that the variable matching circuit 11 and the first variable circuit element 12 are arranged inside the second switch 10.

[0083] As shown in Figure 5, the second switch 10 is configured similarly to the second switch 10 of Embodiment 2, except that it includes a variable matching circuit 11 and a first variable circuit element 12.

[0084] The variable matching circuit 11 comprises variable capacitors C1 and C2, an inductor L1, and switches SW1 to SW3.

[0085] The variable capacitors C1 and C2 each constitute the first variable circuit element 12. That is, in Embodiment 2, the variable matching circuit 11 includes two first variable circuit elements 12 (variable capacitors C1 and C2).

[0086] Variable capacitor C1 has a first terminal and a second terminal. The first terminal of variable capacitor C1 is connected to the common terminal 10a of the second switch 10 via switch SW1. The second terminal of variable capacitor C1 is connected to ground. Variable capacitor C2 has a first terminal and a second terminal. The first terminal of variable capacitor C2 is connected to the common terminal 10a of the second switch 10 via switch SW2. The second terminal of variable capacitor C2 is connected to ground. Inductor L1 has a first terminal and a second terminal. The first terminal of inductor L1 is connected to the common terminal 10a of the second switch 10 via switch SW3. The second terminal of inductor L1 is connected to ground.

[0087] In Embodiment 3, the variable capacitors C1 and C2 and switches SW1 to SW3 are arranged inside the second switch 10, while the inductor L1 is arranged outside the second switch 10. However, the inductor L1 may also be arranged inside the second switch 10.

[0088] The variable capacitors C1 and C2 and the inductor L1 constitute a resonant frequency circuit that attenuates a specific frequency (resonant frequency). By changing the characteristic values ​​(capacitance values) of the variable capacitors C1 and C2, the resonant frequency can be changed, and the resonant circuit can be enabled or disabled. The resonant circuit can also be enabled or disabled by switching the switches SW1 to SW3 on or off.

[0089] For example, to enable the above-mentioned resonant circuit and attenuate a predetermined frequency using the resonant circuit, switches SW1 to SW3 are turned ON, and the capacitance values ​​of each variable capacitor C1 and C2 are changed to predetermined capacitance values. On the other hand, to disable the above-mentioned resonant circuit, all of switches SW1 to SW3 may be turned OFF, or the capacitance values ​​of each variable capacitor C1 and C2 may be changed to predetermined values ​​(sufficiently large values ​​or sufficiently small values).

[0090] (3-2) Effects In the high-frequency module 1 according to Embodiment 3, the variable matching circuit 11 and the first variable circuit element 12 are located inside the second switch 10. This eliminates the need to secure new space for the variable matching circuit 11 and the first variable circuit element 12. Furthermore, the high-frequency module 1 can be miniaturized.

[0091] (4) Embodiment 4 Referring to Figure 6, the high-frequency module 1 according to Embodiment 4 will be described.

[0092] (4-1) Composition As shown in Figure 6, the high-frequency module 1 according to Embodiment 4 differs from the high-frequency module 1 according to Embodiment 3 in that the first filters 7, 8, the second filter 20, the second switch 10, and the second variable circuit element 23 are omitted, and it further includes a plurality of (only four are shown in the example of Figure 6) third filters 30, a plurality of (only four are shown in the example of Figure 6) fourth filters 40, a second switch 60, and a plurality of (four in the example of Figure 6) matching circuits 51 to 54.

[0093] In Embodiment 4, the first filter 7, 8 or the second filter 20 of Embodiment 2 is configured using one third filter selected from a plurality of third filters 30 and one fourth filter selected from a plurality of fourth filters 40.

[0094] The high-frequency module 1 according to Embodiment 4 includes a plurality of external terminals 5a to 5g, a first switch 6, a second switch 60, a plurality of third filters 30, a plurality of fourth filters 40, a plurality of matching circuits 51 to 54, a plurality (two in the example of Figure 6) of power amplifiers 13 and 14, and a plurality (two in the example of Figure 6) of low-noise amplifiers 15 and 16.

[0095] Since the external terminals 5a to 5g are the same as those of Embodiment 3, a detailed explanation will be omitted.

[0096] The first switch 6 is configured similarly to the first switch 6 of Embodiment 3, except that the number of selection terminals has increased. More specifically, the first switch 6 has a plurality of common terminals 6a to 6c (three in the example of Figure 6) and a plurality of selection terminals 6d to 6g (four in the example of Figure 6). Each of the plurality of common terminals 6a to 6c is selectively connected to one of the plurality of selection terminals 6d to 6g.

[0097] Multiple common terminals 6a to 6c are connected to multiple external terminals 5a to 5c, respectively. Select terminal 6d is connected to common terminal 10a of the second switch 60 via a low-pass filter 31. Select terminal 6e is connected to common terminal 60b of the second switch 60 via a high-pass filter 32. Select terminal 6f is connected to common terminal 60c of the second switch 60 via a notch filter 33. Select terminal 6g is connected to common terminal 60d of the second switch 60 via a signal path 34.

[0098] The multiple third filters 30 include at least one (one in the example in Figure 6) low-pass filters 31 having different characteristics from each other, and at least one (one in the example in Figure 6) high-pass filters 32 having different characteristics from each other. In Figure 6, only three third filters 31-33 are shown as the multiple third filters 30, but in reality, other third filters besides the three third filters 31-33 may also be included.

[0099] The low-pass filter 31 is a low-pass filter corresponding to the second communication band (e.g., n79). The low-pass filter 31 has a passband, a high-frequency transition band, and a high-frequency attenuation band. The low-pass filter 31 is an attenuation-focused low-pass filter in which, for example, the high-frequency transition band is close to the upper frequency limit of the first communication band, thereby extending the high-frequency attenuation band towards the passband.

[0100] The low-pass filter 31 has a first end and a second end. The first end of the low-pass filter 31 is connected to the selection terminal 6d of the first switch 6. The second end of the low-pass filter 31 is connected to the common terminal 60a of the second switch 60. The low-pass filter 31 removes high-frequency components above the passband from the signal input to one of the first and second ends, and outputs the remaining signal from the other end.

[0101] The high-pass filter 32 is a high-pass filter corresponding to the first communication band (e.g., n77). The high-pass filter 32 has a passband, a low-frequency transition band, and a low-frequency attenuation band. The high-pass filter 32 is an attenuation-focused high-pass filter in which, for example, the low-frequency transition band is close to the lower limit frequency of the second communication band, thereby extending the low-frequency attenuation band towards the passband.

[0102] The high-pass filter 32 has a first end and a second end. The first end of the high-pass filter 32 is connected to the selection terminal 6e of the first switch 6. The second end of the high-pass filter 32 is connected to the common terminal 60b of the second switch 60. The high-pass filter 32 removes low-frequency components below the passband from the signal input to one of the first and second ends, and outputs the remaining signal from the other end.

[0103] The notch filter 33 is a filter that reduces specific frequencies and is configured, for example, by a resonant circuit. The notch filter 33 is connected between the selection terminal 6f of the first switch 6 and the common terminal 60c of the second switch 60. The notch filter 33 is a filter that, for example, when used in combination with the high-pass filter 42 or 43, further extends the attenuation band on the low-frequency side of the high-pass filter 42 or 43 to the passband side (high-frequency side) of the high-pass filter 42 or 43.

[0104] The signal path 34 is connected between the selection terminal 6g of the first switch 6 and the common terminal 60d of the second switch 60. The signal path 34 can be interpreted as a filter with an infinite passband. The signal path 34 is the path to select when none of the multiple third filters 31 to 33 are selected.

[0105] The second switch 60 selects a connection partner for one of the third filters 30 selected by the first switch 6 from among the multiple third filters 30, from among the multiple fourth filters 40. The second switch 60 has multiple (four in the example of Figure 6) common terminals 60a to 60d and multiple (four in the example of Figure 6) selection terminals 60f to 60i. The multiple common terminals 60a to 60d are selectively connected to one of the multiple selection terminals 60f to 60i. Common terminal 60a is connected to selection terminal 6d of the first switch 6 via a low-pass filter 31. Common terminal 60b is connected to selection terminal 6e of the first switch 6 via a high-pass filter 32. Common terminal 60c is connected to selection terminal 6f of the first switch 6 via a notch filter 33. Common terminal 60d is connected to selection terminal 6g of the first switch 6 via a signal path 34.

[0106] Inside the second switch 60, the first variable circuit element 12 is located. The second variable circuit element 23 is connected to the common terminal 60a. The second variable circuit element 23 shifts the frequency characteristics of the second filters for transmission and reception, which will be described later, as in the third embodiment.

[0107] The multiple fourth filters 40 include at least one (two in the example of Figure 6) low-pass filters 41, 44 having different characteristics from each other, and at least one (one in the example of Figure 6) high-pass filters 42, 43 having different characteristics from each other.

[0108] The low-pass filter 41 is a low-pass filter corresponding to the first communication band (e.g., n77). The low-pass filter 41 has a passband, a high-frequency transition band, and a high-frequency attenuation band. The low-pass filter 41 is a low-pass filter that prioritizes low insertion loss, in which the passband is widened to the high-frequency side by, for example, a certain width on the high-frequency side of the high-frequency transition band, which is higher than the upper limit frequency of the first communication band.

[0109] The low-pass filter 41 has a first end and a second end. The first end of the low-pass filter 41 is connected to the selection terminal 60f of the second switch 60. The second end of the low-pass filter 41 is connected to the output section of the power amplifier 13 via a matching circuit 51. The low-pass filter 41 removes high-frequency components higher than the passband from the signal input to the first end, and outputs the remaining signal from the second end.

[0110] The high-pass filter 42 is a high-pass filter that corresponds to the second communication band (e.g., n79). The high-pass filter 42 has a passband, a low-frequency transition band, and a low-frequency attenuation band. The high-pass filter 42 is a high-pass filter that prioritizes low insertion loss, in which the passband is widened to the low-frequency side by, for example, a certain width below the lower limit frequency of the second communication band by the low-frequency transition band.

[0111] The high-pass filter 42 has a first end and a second end. The first end of the high-pass filter 42 is connected to the selection terminal 60g of the second switch 60. The second end of the high-pass filter 42 is connected to the output section of the power amplifier 14 via the matching circuit 52. The high-pass filter 42 removes low-frequency components below the passband from the signal input to the second end, and outputs the remaining signal from the first end.

[0112] The high-pass filter 43 is a high-pass filter that corresponds to the second communication band (e.g., n79). The high-pass filter 43 has a passband, a low-frequency transition band, and a low-frequency attenuation band. The high-pass filter 43 is a high-pass filter that prioritizes low insertion loss, in which the passband is widened to the low-frequency side by, for example, a certain distance to the low-frequency side of the low-frequency transition band from the lower limit frequency of the second communication band.

[0113] Furthermore, the passband of the high-pass filter 43 is wider (or narrower) than that of the high-pass filter 42, resulting in different characteristics between them.

[0114] The high-pass filter 43 has a first end and a second end. The first end of the high-pass filter 43 is connected to the selection terminal 60h of the second switch 60. The second end of the high-pass filter 43 is connected to the input of the low-noise amplifier 15 via a matching circuit 53. The high-pass filter 43 removes low-frequency components below the passband from the signal input to the second end and outputs the remaining signal from the first end.

[0115] The low-pass filter 44 is a low-pass filter corresponding to the first communication band (e.g., n77). The low-pass filter 41 has a passband, a high-frequency transition band, and a high-frequency attenuation band. The low-pass filter 41 is a low-pass filter that prioritizes low insertion loss, in which the passband is widened to the high-frequency side by, for example, a certain width on the high-frequency side of the high-frequency transition band, which is higher than the upper limit frequency of the first communication band.

[0116] Furthermore, the passband of the low-pass filter 44 is wider (or narrower) than that of the low-pass filter 41, resulting in different characteristics between them.

[0117] The low-pass filter 44 has a first end and a second end. The first end of the low-pass filter 44 is connected to the selection terminal 60i of the second switch 60. The second end of the low-pass filter 44 is connected to the input of the low-noise amplifier 16 via a matching circuit 54. The low-pass filter 44 removes high-frequency components above the passband from the signal input to the first end and outputs the remaining signal from the second end.

[0118] The matching circuit 51 is connected between the low-pass filter 41 and the power amplifier 13, and performs impedance matching between the low-pass filter 41 and the power amplifier 13. The matching circuit 52 is connected between the high-pass filter 42 and the power amplifier 14, and performs impedance matching between the high-pass filter 42 and the power amplifier 14. The matching circuit 53 is connected between the high-pass filter 43 and the low-noise amplifier 15, and performs impedance matching between the high-pass filter 43 and the low-noise amplifier 15. The matching circuit 54 is connected between the low-pass filter 44 and the low-noise amplifier 16, and performs impedance matching between the low-pass filter 41 and the low-noise amplifier 16.

[0119] Multiple power amplifiers 13, 14 correspond one-to-one with two predetermined fourth filters 41, 42 from among the multiple fourth filters 40. Similarly, multiple low-noise amplifiers 15, 16 correspond one-to-one with two predetermined fourth filters 43, 44 from among the multiple fourth filters 40.

[0120] The power amplifier 13 is configured similarly to the power amplifier 13 of Embodiment 3. The power amplifier 13 has an input section and an output section. The input section of the power amplifier 13 is connected to an external terminal 5d. The output section of the power amplifier 13 is connected to the second terminal of the corresponding low-pass filter 41 via a matching circuit 51.

[0121] The power amplifier 14 is configured similarly to the power amplifier 14 of Embodiment 3. The power amplifier 14 has an input section and an output section. The input section of the power amplifier 14 is connected to the external terminal 5e. The output section of the power amplifier 14 is connected to the second end of the corresponding high-pass filter 43 via the matching circuit 52.

[0122] The low-noise amplifier 15 is configured similarly to the low-noise amplifier 15 of Embodiment 3. The low-noise amplifier 15 has an input section and an output section. The input section of the low-noise amplifier 15 is connected to the second end of the corresponding high-pass filter 43 via a matching circuit 53. The output section of the low-noise amplifier 15 is connected to an external terminal 5f.

[0123] The low-noise amplifier 16 is configured similarly to the low-noise amplifier 16 of Embodiment 3. The low-noise amplifier 16 has an input section and an output section. The input section of the low-noise amplifier 16 is connected to the second end of the corresponding low-pass filter 44 via a matching circuit 54. The output section of the low-noise amplifier 16 is connected to an external terminal 5g.

[0124] In Embodiment 4, a low-pass filter 31 and a high-pass filter 42 are combined to form a second filter for transmission having a passband that includes a second communication band (e.g., n79). Also, a low-pass filter 31 and a high-pass filter 43 are combined to form a second filter for reception having a passband that includes a second communication band (e.g., n79). Since the second filter for reception and the second filter for transmission are equipped with a common low-pass filter 31, they are partially filters used for both transmission and reception, corresponding to the second filter 20 used for both transmission and reception in Embodiment 3.

[0125] Here, the second switch 60 has the function of selecting the third filter 30 and the fourth filter 40 that constitute the second filter from among a plurality of third filters 30 and a plurality of fourth filters 40, and the function of switching the second filter for transmission or reception.

[0126] In the second filter for transmission or reception, if the characteristic value of the first variable circuit element 12 is the first characteristic value, the frequency characteristics of the second filter are shifted by the first variable circuit element 12 to the passband side of the first communication band (e.g., n77), as shown by frequency characteristics M2 in Figure 2. Furthermore, in the second filter for transmission or reception, if the characteristic value of the first variable circuit element 12 is the second characteristic value, the frequency characteristics of the second filter are shifted by the first variable circuit element 12 to the passband side of the second communication band (e.g., n79), as shown by frequency characteristics M2a in Figure 2. In this case, if the frequency characteristics of the second filter are to be shifted further to a higher frequency than frequency characteristics M2a in Figure 2, for example, a notch filter 33 can be selected instead of the low-pass filter 31. The notch filter 33 has a frequency characteristic that attenuates specific frequencies located near the lower frequency side of the lower limit frequency of the second communication band (n79). By combining the notch filter 33 with the high-pass filter 42 or 43, the low-frequency attenuation band of the second filter's frequency response can be shifted to a higher frequency than the frequency response M2a in Figure 2. However, in this case, the second filter becomes a high-pass filter.

[0127] Furthermore, the combination of the high-pass filter 32 and the low-pass filter 41 constitutes a first transmission filter having a passband that includes a first communication band (e.g., n77).

[0128] Furthermore, the combination of the high-pass filter 32 and the low-pass filter 44 constitutes a first transmission filter having a passband that includes the first communication band (e.g., n77).

[0129] (4-2) Operation of the high-frequency module 1 (4-2-1) Operation when using the second communication band alone for communication The operation when communication (e.g., reception) is performed using the second communication band alone (the first case) will be explained. In the first case, in the first switch 6, for example, common terminal 6b is connected to selection terminal 6d, and the remaining common terminals 6a and 6c are not connected to selection terminals 6d to 6g. Also, in the second switch 60, common terminal 60a is connected to selection terminal 60h, and the remaining common terminals 60a, 60c to 60d are not connected to the multiple selection terminals 60f to 60i. Through these connections, the low-pass filter 31 is selected from the multiple third filters 30, and the high-pass filter 43 is selected from the multiple fourth filters 40. The selected low-pass filter 31 and high-pass filter 43 then constitute a second filter having a passband that includes the second communication band (e.g., n79). Furthermore, the characteristic value of the first variable circuit element 12 takes the first characteristic value, and the frequency characteristics of the second filter are shifted towards the first communication band (e.g., n77), as shown in the frequency characteristics M2 of Figure 2.

[0130] In the above connection state, when antenna 3b receives a received signal (second TDD signal), the received signal is output to the signal processing circuit 2 from the external terminal 5f via the first switch 6, low-pass filter 31, second switch 60, high-pass filter 43, matching circuit 53, and low-noise amplifier 15. At this time, the frequency characteristics of the second filter are shifted to the first communication band (n77) side, as shown in frequency characteristics M2 in Figure 2, so that the insertion loss when the received signal passes through the second filter is reduced. In other words, the communication quality of communication using the second filter alone can be improved.

[0131] (4-2-2) Operation when communicating using the first and second communication bands simultaneously The operation in the case of simultaneously performing communication using the first communication band (e.g., transmission) and communication using the second communication band (e.g., reception) (the second case) will be explained. In the second case, in the first switch 6, for example, common terminal 6a is connected to selection terminal 6e, common terminal 6b is connected to selection terminal 6d, and the remaining common terminal 6c is not connected to selection terminals 6d to 6g. Also, in the second switch 60, common terminal 60a is connected to selection terminal 60h, common terminal 60b is connected to selection terminal 60f, and the remaining common terminals 60c and 60d are not connected to the multiple selection terminals 60f to 60i.

[0132] These connections allow a high-pass filter 32 to be selected from among multiple third filters 30, and a low-pass filter 41 to be selected from among multiple fourth filters 40. The selected high-pass filter 32 and low-pass filter 41 then constitute a first filter having a passband that includes the first communication band (e.g., n77). Additionally, a low-pass filter 31 is selected from among multiple third filters 30, and a high-pass filter 43 is selected from among multiple fourth filters 40. The selected low-pass filter 31 and high-pass filter 43 then constitute a second filter having a passband that includes the second communication band (e.g., n79). Furthermore, the characteristic value of the first variable circuit element 12 takes the second characteristic value, and the frequency characteristics of the second filter 9 are shifted towards the second communication band (e.g., n79), as shown in frequency characteristics M2a of Figure 2. This reduces the overlap between the transition band on the second communication band side of the first filter and the transition band on the first communication band side of the second filter.

[0133] In this connection state, when antenna 3b receives a receiving signal (second TDD signal), the received signal is output to the signal processing circuit 2 from external terminal 5f via the first switch 6, low-pass filter 31, second switch 60, high-pass filter 43, matching circuit 53, and low-noise amplifier 15. Simultaneously with this reception, a transmission signal (first TDD signal) is input from the signal processing circuit 2 to external terminal 5d. Then, the above transmission signal is transmitted externally from antenna 3a via external terminal 5d, power amplifier 13, matching circuit 51, low-pass filter 41, second switch 60, high-pass filter 32, and first switch 6.

[0134] At this time, a portion of the transmitted signal leaks from the selection terminal 6d of the first switch 6 to the low-pass filter 31, the second switch 60, and the high-pass filter 43 (i.e., the second filter consisting of the low-pass filter 31 and the high-pass filter 43). However, as described above, by setting the characteristic value of the first variable circuit element 12 to the second characteristic value, the frequency characteristics of the second filter are shifted to the second communication band side, as shown in the frequency characteristics M2a of Figure 2. Therefore, signal interference between the frequency characteristics of the second filter and the frequency characteristics of the first filter 7 in their respective transition bands is reduced. Consequently, the amount of the transmitted signal passing through the second filter can be reduced. As a result, when the received signal passes through the second filter, the amount of the transmitted signal that leaked into the second filter mixed into the received signal can be reduced. In other words, the reception quality (communication quality) can be improved.

[0135] (4-3) Effects The high-frequency module 1 according to Embodiment 4 comprises a plurality of third filters 30, a plurality of fourth filters 40, a plurality of low-noise amplifiers 15, 16, and a plurality of power amplifiers 13, 14. The plurality of third filters 30 include at least one low-pass filter 31 and at least one high-pass filter 32. The plurality of fourth filters 40 include at least one low-pass filter 41, 44 and at least one high-pass filter 42, 43. The plurality of low-noise amplifiers 15, 16 include the first low-noise amplifier 15. The plurality of power amplifiers 13, 14 include the first power amplifier 14. Each of the plurality of low-noise amplifiers 15, 16 is connected to the corresponding fourth filter 43, 44 from the plurality of fourth filters 40. Each of the plurality of power amplifiers 13, 14 is connected to the corresponding fourth filter 41, 42 from the plurality of fourth filters 40. The first switch 6 selects the connection destination for each of the plurality of antenna terminals 5a to 5c from among the plurality of third filters 30. The second switch 60 selects the connection destination of the third switch selected by the first switch 6 from among the multiple third filters 30 from among the multiple fourth filters 40. When receiving using the second communication band, the second filter is composed of one third filter 31 selected by the first switch 6 from among the multiple third filters 30, and a fourth filter 43 connected to the first low-noise amplifier 15, selected by the second switch 60 from among the multiple fourth filters 40. When transmitting using the second communication band, the second filter is composed of one third filter 31 selected by the first switch 6 from among the multiple third filters 30, and a fourth filter 42 connected to the first power amplifier 14, selected by the second switch 60 from among the multiple fourth filters 40. When transmitting or receiving using the first communication band, the first filters 7 and 8 are composed of another third filter 32 selected by the first switch 6 from among a plurality of third filters 30, and fourth filters 41 and 44 selected by the second switch 60 from among a plurality of fourth filters 40, which are connected to a power amplifier 13 other than the first power amplifier 14 or a low-noise amplifier 16 other than the first low-noise amplifier 15.

[0136] With this configuration, the first filters 7, 8 and the second filter 20 of Embodiment 3 can be configured by a combination of the third filter 30 selected by the first switch 6 and the fourth filter 40 selected by the second switch 60, thereby changing their frequency characteristics.

[0137] (4-4) Variations A modified example of Embodiment 4 will now be described.

[0138] (4-4-1) Modification 1 The high-frequency module 1 according to Embodiment 4 is exemplified by a case in which a set of multiple third filters 31-33, a second switch 60, multiple fourth filters 40, multiple matching circuits 51-54, power amplifiers 13, 14, and low-noise amplifiers 15, 16 is provided (this set is referred to as set G1). However, as shown in Figure 7, the high-frequency module 1 according to Modification 1 further provides another set (this set is referred to as set G2) with the same configuration as set G1 in the high-frequency module 1 according to Embodiment 4. That is, the high-frequency module 1 according to Modification 1 provides multiple sets (two sets G1, G2 in the example of Figure 7) of multiple third filters 30, second switches 60, multiple fourth filters 40, multiple matching circuits 51-54, power amplifiers 13, 14, and low-noise amplifiers 15, 16.

[0139] The high-frequency module 1 of the modified example 1 further comprises a plurality of external terminals 5h to 5k in addition to the high-frequency module 1 of the embodiment 4.

[0140] External terminal 5h is connected to the output section of signal processing circuit 2, and the transmission signal (first TDD signal) output from signal processing circuit 2 is input to it. External terminal 5i is connected to the output section of signal processing circuit 2, and the transmission signal (second TDD signal) output from signal processing circuit 2 is input to it. External terminal 5j is connected to the input section of signal processing circuit 2, and the received signal (second TDD signal) output from high-frequency module 1 is input to it. External terminal 5k is connected to the input section of signal processing circuit 2, and the received signal (first TDD signal) output from high-frequency module 1 is input to it.

[0141] The first switch 6 in the modified example 1 further comprises selection terminals 6i to 6k and 6m in the first switch of embodiment 4.

[0142] The first ends of the multiple third filters 30 of set G2 are connected to the multiple selection terminals 6i~6k and 6m of the first switch 6, respectively. The input sections of the multiple power amplifiers 13 and 14 and the output sections of the multiple low-noise amplifiers 15 and 16 of set G2 are connected to the multiple external terminals 5h~5k, respectively.

[0143] The high-frequency module 1 according to Modification 1 comprises multiple sets G1, G2, each containing a second switch 60, a first variable circuit element 12, a plurality of third filters 30, and a plurality of fourth filters 40. With this configuration, multiple receptions or multiple transmissions can be performed simultaneously using the same communication band.

[0144] (5) Embodiment 5 (5-1) Composition The high-frequency module 1 according to Embodiment 5 will be described with reference to Figures 8 and 9.

[0145] Embodiment 5 describes an example of the arrangement of the components of the high-frequency module 1 according to Embodiment 4.

[0146] As shown in Figure 8, the high-frequency module 1 according to Embodiment 5 further includes a mounting substrate 70 in addition to the configuration of the high-frequency module 1 according to Embodiment 4.

[0147] In Embodiment 5, the multiple third filters 31-33 are, for example, LC filters or acoustic wave filters. The multiple fourth filters 41-44 are, for example, LC filters.

[0148] The mounting substrate 70 is, for example, a flat plate. The mounting substrate 70 is, for example, a resin multilayer substrate. However, the mounting substrate 70 is not limited to a resin multilayer substrate, and may be, for example, a printed circuit board, an LTCC (Low Temperature Co-fired Ceramics) substrate, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0149] The mounting substrate 70 is, for example, a multilayer substrate including multiple dielectric layers (insulating layers) and multiple conductive layers. Each of the multiple conductive layers is provided between the multiple dielectric layers. That is, the multiple dielectric layers and the multiple conductive layers are stacked alternately in the thickness direction D1 of the mounting substrate 70. The multiple conductive layers are formed in a predetermined pattern defined for each layer.

[0150] The mounting substrate 70 has a first main surface 70a and a second main surface 70b. The first main surface 70a and the second main surface 70b are main surfaces that face each other in the thickness direction D1 of the mounting substrate 70.

[0151] On the first main surface 70a, the configuration of the high-frequency module 1 according to Embodiment 4 is arranged, for example, a first switch 6, a second switch 60, a plurality of third filters 30, a plurality of fourth filters 40, a plurality of matching circuits 51 to 54, a plurality of power amplifiers 13 and 14, and a plurality of low-noise amplifiers 15 and 16. In the example of Figure 8, only the first switch 6, the fourth filter 41, the power amplifier 13, and the matching circuit 51 are shown. In the example of Figure 9, only the first switch 6, the third filter 31, and the fourth filter 41 are shown.

[0152] A second switch 60 is located on the second main surface 70b. A first variable circuit element 12 is located inside the mounting substrate 70. In Embodiment 4, the first variable circuit element 12 is located inside the second switch 60, but in Embodiment 5, it is located inside the mounting substrate 70.

[0153] The second switch 60 is located on the second main surface 70b of the mounting board 70, and in a plan view from the thickness direction D1 of the mounting board 70, it overlaps with at least a portion of the first switch 6 (see Figure 9). This allows the connection wiring between the first switch 6 and the second switch 60 to be shortened.

[0154] The first variable circuit element 12 is located inside the mounting substrate 70 and, in a plan view from the thickness direction D1 of the mounting substrate 70, overlaps with both the first switch 6 and the second switch 60 (see Figure 9). That is, in a plan view from the thickness direction D1 of the mounting substrate 70, the first variable circuit element 12 overlaps with at least a portion of the first switch 6 and at least a portion of the second switch 60. This allows the connection wiring between the first switch 6 and the second switch 60 and the first variable circuit element 12 to be shortened.

[0155] (5-2) Effects The high-frequency module 1 according to Embodiment 5 further comprises a mounting substrate 70. The mounting substrate 70 has a first main surface 70a and a second main surface 70b that face each other. The first switch 6 is located on the first main surface 70a of the mounting substrate 70. The second switch 10 is located on the second main surface 70b of the mounting substrate 70 and overlaps with at least a portion of the first switch 6 in a plan view from the thickness direction D1 of the mounting substrate 70. The first variable circuit element 12 is located on the mounting substrate 70.

[0156] This configuration allows for shorter connection wiring between the first switch 6 and the second switch 60. Consequently, the formation of a resonant circuit by the connection wiring can be reduced. As a result, frequency fluctuations of the first and second TDD signals caused by the resonant circuit can be reduced.

[0157] Furthermore, in the high-frequency module 1 according to Embodiment 5, the first variable circuit element 12 is located inside the mounting substrate 70. In a plan view from the thickness direction D1 of the mounting substrate 70, the first variable circuit element 12 overlaps with at least a portion of the first switch 6 and at least a portion of the second switch 10.

[0158] This configuration allows for shorter connection wiring between the first switch 6 and the second switch 60 and the first variable circuit element 12. As a result, frequency fluctuations of the first TDD signal and the second TDD signal caused by the resonant circuit formed by the above connection wiring can be reduced.

[0159] (5-3) Variations A modified example of Embodiment 5 will now be described. The following modifications can be implemented in combination.

[0160] (5-3-1) Variation 1 Embodiment 5 illustrates a case where the first variable circuit element 12 is arranged inside the mounting substrate 70. However, the first variable circuit element 12 may be arranged on the first main surface 70a or the second main surface 70b of the mounting substrate 70. With this configuration, when the first variable circuit element 12 is arranged on the first main surface 70a or the second main surface 70b of the mounting substrate 70, the connection wiring between the first switch 6 and the second switch 60 can be shortened.

[0161] Furthermore, if the first variable circuit element 12 is placed on the first main surface 70a or the second main surface 70b of the mounting substrate 70, the first variable circuit element 12 may be placed inside an electronic component (e.g., a filter, matching circuit, switch, etc.) placed on the first main surface 70a or the second main surface 70b of the mounting substrate 70.

[0162] Furthermore, embodiments 1 to 5 and their modified forms may be implemented in combination. [Explanation of Symbols]

[0163] 1. High-frequency module 2. Signal Processing Circuit 3,3a~3c antenna 5a~5c External terminals (antenna terminals) 5d~5k External terminals 6. Switch 1 6a~6c Common terminals 6d~6k, 6m selectable terminal 7,8 First filter 7a Input section (first end) 7b Output section 9. Second filter 10. Second switch 10a Common terminal 10b, 10c Selectable terminals 11 Variable Matching Circuit 12. First Variable Circuit Element 13 Power Amplifier 13a Input section 13b Output section 14. Power Amplifier (First Power Amplifier) 14a Input section 14b Output section 15. Low-noise amplifier (1st low-noise amplifier) 15a Input section 15b Output section 16 Low-noise amplifiers 16a Input section 16b Output section 17 Duplexa 17a 1st input / output section (1st end) 17b Second input / output section (second end) 17c Output section 20. Second filter 21 RF signal processing circuit 22 Baseband signal processing circuit 23. Second Variable Circuit Element 30 Third Filter 31 Low-pass filter 32 High-pass filters 33 Notch Filter 34 Signaling Path 40. Fourth filter 41 Low-pass filter 42 High-pass filters 43 High-pass filter 44 Low-pass filter 51~54 Matching circuit 60 Second switch 60a~60d Common terminal 60f~60i selection terminal 70 Implemented circuit boards 70a First main surface 70b 2nd principal surface 71,81 First Passband 72,82 First transition band 73,83 First attenuation band 91,91a Second passband 92,92a Second transition band 93,93a Second attenuation band (attenuation band) 200 Communication devices C1, C2 Variable Capacitors D1 Thickness direction fp peak frequency G1,G2 group K1 1st boundary frequency K2 2nd boundary frequency K3 Bandwidth L1 Inductor M11,M12,M2,M2a frequency characteristics N2 null point Q1 Frequency Response SW1~SW3 Switches

Claims

1. A high-frequency module that processes a first TDD signal in a first communication band and a second TDD signal in a second communication band adjacent to the first communication band, wherein the communication bandwidth of the first communication band is wider than the communication bandwidth of the second communication band. A first filter having a first passband including the first communication band, A second filter having a second passband including the second communication band, A first switch that selects the connection destination of each of the multiple antenna terminals from the first ends of the first filter and the second filter, A second switch for selecting the connection destination of the second end of the second filter from among the first power amplifier and the first low-noise amplifier, The second filter comprises a first variable circuit element connected inside the second filter, inside the second switch, or between the second filter and the second switch, which shifts the attenuation band on the first passband side of the second filter. High-frequency module.

2. The system further comprises a variable matching circuit connected between the second filter and the second switch, The first variable circuit element is located inside the variable matching circuit. The high-frequency module according to claim 1.

3. Further comprising a second variable circuit element, The second variable circuit element constitutes a variable circuit element of the second filter, which is a variable filter. The high-frequency module according to claim 1 or 2.

4. Multiple third filters, including at least one low-pass filter and one high-pass filter, Multiple fourth filters, including at least one low-pass filter and at least one high-pass filter, Multiple low-noise amplifiers, including the first low-noise amplifier, The system comprises a plurality of power amplifiers, including the first power amplifier, Each of the aforementioned low-noise amplifiers is connected to the corresponding fourth filter among the aforementioned fourth filters. Each of the aforementioned power amplifiers is connected to the corresponding fourth filter among the aforementioned fourth filters. The first switch selects the connection destination of each of the plurality of antenna terminals from among the plurality of third filters, The second switch selects from among the plurality of third filters the connection destination of the third switch selected by the first switch from among the plurality of fourth filters, When receiving using the second communication band, the second filter is composed of one third filter selected by the first switch from among the plurality of third filters, and a fourth filter connected to the first low-noise amplifier, selected by the second switch from among the plurality of fourth filters. When transmitting using the second communication band, the second filter is composed of the first third filter selected by the first switch from among the plurality of third filters, and the fourth filter connected to the first power amplifier, selected by the second switch from among the plurality of fourth filters. During transmission or reception using the first communication band, the first filter is composed of another third filter selected by the first switch from among the plurality of third filters, and a fourth filter selected by the second switch from among the plurality of fourth filters, which is connected to a power amplifier other than the first power amplifier or a low-noise amplifier other than the first low-noise amplifier. A high-frequency module according to any one of claims 1 to 3.

5. The system comprises multiple sets of the second switch, the first variable circuit element, the plurality of third filters, and the plurality of fourth filters. The high-frequency module according to claim 4.

6. The mounting substrate further comprises a first main surface and a second main surface facing each other, The first switch is located on the first main surface of the mounting substrate, The second switch is arranged on the second main surface of the mounting substrate and, in a plan view from the thickness direction of the mounting substrate, overlaps with at least a portion of the first switch. The first variable circuit element is located on the mounting substrate. A high-frequency module according to any one of claims 1 to 5.

7. The first variable circuit element is located inside the mounting substrate and, in a plan view from the thickness direction of the mounting substrate, overlaps with at least a portion of the first switch and at least a portion of the second switch. The high-frequency module according to claim 6.

8. The first variable circuit element is located on the first main surface or the second main surface of the mounting substrate. The high-frequency module according to claim 6.

9. A high-frequency module according to any one of claims 1 to 8, The system includes a signal processing circuit connected to the aforementioned high-frequency module for processing high-frequency signals. Communication device.

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