Processing method for single-crystal quartz material

Abstract

This invention provides a method for processing single-crystal quartz that effectively avoids the formation of twins after processing the single-crystal quartz material. [Solution] Determine the processing await region of the single-crystal quartz material where twinning is likely to occur, modify the processing await region on the single-crystal quartz material using a modifying machine to reduce the difficulty of processing the processing await region, and then process the single-crystal quartz material in the modified processing await region using a processing machine.

Description

Technical Field

[0001] The present invention relates to a processing method, and more particularly, to a processing method for single-crystal quartz materials.

Background Art

[0002] Since the etching process includes multiple processes such as Physical Vapor Deposition (PVD), yellow light, and dry / wet etching, the use of lasers can reduce the number of processes compared to processing materials using etching, reduce processing costs, reduce the load on the etching station, and increase production efficiency.

[0003] Currently, single-crystal quartz is processed using an ultra-high-speed laser, and most of its laser wavelengths are between the UV-IR wavelengths of 355 nm to 1064 nm. The transmittance of quartz for these wavelengths is close to 90%, so it is necessary to induce ablation on the surface of the quartz material with greater energy during processing, which leads to excessive heat accumulation. Also, excessive local temperature or excessive temperature gradient leads to the formation of twins.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention provides a processing method for single-crystal quartz materials, which first modifies the single-crystal quartz material before processing to reduce the processing difficulty of the single-crystal quartz material.

[0005] The present invention provides a processing method for single-crystal quartz materials that can effectively avoid the formation of twins after processing of the single-crystal quartz materials.

Means for Solving the Problems

[0006] One embodiment of the present invention provides a method for processing a single-crystal quartz material. This processing method includes determining a processing-await region in the single-crystal quartz material where twinning is likely to occur, modifying the processing-await region on the single-crystal quartz material using a modifier to reduce the processing difficulty of the processing-await region, and processing the single-crystal quartz material in the modified processing-await region using a processing machine. [Effects of the Invention]

[0007] Based on the above, in one embodiment of the present invention, a method for processing a single-crystal quartz material involves modifying a processing-await region on the single-crystal quartz material using a modifier to reduce the processing difficulty of the processing-await region, and then processing the single-crystal quartz material in the modified processing-await region using a processing machine. Therefore, by first modifying the processing-await region, the thermal threshold required to produce a processing effect during processing can be effectively reduced, thereby reducing heat accumulation or thermal influence and lowering the processing temperature and temperature gradient. Furthermore, due to the effect of lowering the processing temperature and temperature gradient as described above, the method for processing single-crystal quartz material can further avoid the problem of twinning generation in the processing process. [Brief explanation of the drawing]

[0008] [Figure 1] This is a flowchart illustrating a method for processing single-crystal quartz material based on one embodiment of the present invention. [Figure 2] This figure shows a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which a modifier modifies a processing-await region of the single-crystal quartz material, and a processing machine processes the single-crystal quartz material in the modified processing-await region. [Figure 3] This figure shows a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which the processing machine is an etching device and holes are formed in the single-crystal quartz material. [Figure 4] This is a detailed flowchart of step S100 in Figure 1. [Figure 5] This is a detailed flowchart of step S100 in Figure 1. [Figure 6]A method for processing a single-crystal quartz material based on another embodiment of the present invention, and a detailed flowchart of step S100 in FIG. 1. [Figure 7] It is a diagram showing a specific angle or specific position of the crystal of a single-crystal quartz material in a method for processing a single-crystal quartz material based on one embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0009] FIG. 1 is a flowchart of a method for processing a single-crystal quartz material based on one embodiment of the present invention. FIG. 2 is a diagram showing that in a method for processing a single-crystal quartz material based on one embodiment of the present invention, a modifier modifies a processing waiting area of the single-crystal quartz material, and a processing machine processes the single-crystal quartz material in the processing waiting area after modification. Referring to FIGS. 1 and 2, one embodiment of the present invention provides a method for processing a single-crystal quartz material M including the following steps. In step S10, a processing waiting area A where twins of the single-crystal quartz material M are likely to occur is determined. In step S100, using a modifier 100, the processing waiting area A on the single-crystal quartz material M is modified to reduce the processing difficulty of the processing waiting area A. In step S200, using a processing machine 200, the single-crystal quartz material M is processed in the processing waiting area A after modification.

[0010] In this embodiment, when modifying single-crystal quartz (α-SiO₂ at a temperature T < 573°C), its crystal structure changes to amorphous quartz. For this purpose, re-changing the single-crystal quartz to the state of twinned quartz (β-SiO₂ at 573°C < T < 870°C) is not included (that is, avoiding becoming β-SiO₂ twins). The modifier directly or indirectly modifies the processing waiting area A, for example. The modification method may include physical or chemical processes such as heating, cooling, ion bombardment, and implantation. For example, the modifier 100 may include a heater, a cooler, a plasma device, an ion bombardment device, an ion implantation device, or a laser, but the present invention is not limited thereto. In one preferred embodiment, as shown in FIG. 2, the modifier 100 may be a laser.

[0011] Furthermore, the processing method may include, but is not limited to, drilling, cutting, etching, or a combination thereof. For example, the processing machine 200 may include a plasma device, an ion shock device, an ion implantation device, or a laser. As shown in Figure 2, the processing machine 200 may be a laser. The modifier 100 and the processing machine 200 emit laser light L1 and L2, respectively. Laser light L1 modifies the processing waiting area A, and laser light L2 generates ablation in the modified processing waiting area A to perform processing. The laser may be a picosecond (ps) ultrafast laser, or a laser with a shorter pulse width and an unlimited wavelength (e.g., parameters 10 ps, ​​wavelength 300 nm, processing energy > 0.2 W), for example, an ultrafast laser with a pulse width of less than 1 nanosecond. For example, layered focus changes are used, and the depth of focus is at least 5 μm apart. For example, Bessel beam modification: single-point vertical modification, the modification range is a single point of 5 μm or less connected. For example, surface modification: Focusing on the surface to modify a large area.

[0012] Figure 3 shows a method for processing a single-crystal quartz material according to one embodiment of the present invention, in which the processing machine is an etching device and holes are formed in the single-crystal quartz material. Referring to Figure 3, in another embodiment, the processing machine includes a dry or wet etching device and processes the modified awaiting processing region A by the etching process.

[0013] For example, first, a single-crystal quartz material M is modified, a photoresist layer PR is placed on the single-crystal quartz material M, the single-crystal quartz material M is exposed using a mask, and then etching is performed on the single-crystal quartz material M. After etching, for example, holes T are formed. In other words, by first modifying the processing area before performing the etching process, the speed of the etching process can be increased and the effect of etching can be enhanced. For example, deeper holes T can be formed. Furthermore, the reduction in processing difficulty described in step S100 can, for example, increase the etching speed of dry etching / wet etching by at least 200% (depending on etching conditions and parameters) and reduce the processing time of the processing method by at least 200%.

[0014] Figure 4 is a detailed flowchart of step S100 in Figure 1. Referring to Figure 4, in this embodiment, step S100 described above includes the following steps. In step S120, while the modifier 100 modifies the processing waiting region A of the single crystal quartz material M, the modifier 100 controls the energy applied to the processing waiting region A to keep the temperature gradient of the processing waiting region A below the upper limit of the temperature gradient.

[0015] Figure 5 is a detailed flowchart of step S100 in Figure 1. Referring to Figure 5, in this embodiment, step S100 described above further includes the following steps. In step S140, while the modifier 100 modifies the processing waiting region A of the single crystal quartz material M, the modifier 100 controls the cumulative energy applied to the processing waiting region A to keep the temperature of the processing waiting region A below the upper temperature limit. The upper temperature limit is, for example, 573 degrees Celsius.

[0016] In other words, by controlling the instantaneous and cumulative energy applied to the processing waiting area A during the modification process, twinning of the single-crystal quartz material M during modification is avoided.

[0017] Figure 6 shows a method for processing a single-crystal quartz material according to another embodiment of the present invention, and a detailed flowchart of step S100 in Figure 1. Referring to Figure 6, in the other embodiment, step S100 described above further includes the following steps. In step S160', the single-crystal quartz material M is modified along specific angles and specific positions of the crystal of the single-crystal quartz material M. That is, during the modification, specific angles and specific positions where twinning is likely to occur are given priority in modification, which further avoids the occurrence of twinning during processing.

[0018] Figure 7 shows a specific angle or position of the crystal of a single-crystal quartz material in a processing method for a single-crystal quartz material according to one embodiment of the present invention. Using Figure 7 as an example, when cutting a single-crystal quartz material M with an AT cut, in the XZ plane of the single-crystal quartz material M, there is a first twinning region R1 where twinning is likely to occur at the upper left corner of region R, and a second twinning region R2 where twinning is likely to occur at a position 180° relative to the first twinning region R1. Therefore, in step S160' described above, the first twinning region R1 and the second twinning region R2 are modified preferentially. However, the present invention does not limit the position or angle of the first twinning region R1 and the second twinning region R2. The specific angle and specific position of the crystal of the single-crystal quartz material M depend on the properties of the single-crystal quartz material M during processing.

[0019] To summarize the above, in one embodiment of the present invention, a method for processing a single crystal quartz material includes modifying a processing waiting area of the single crystal quartz material using a modifier to reduce the processing difficulty of the processing waiting area, and processing the single crystal quartz material in the modified processing waiting area using a processing machine. That is, the area after the modifier has completed the modification can then be processed, or after waiting for all areas that require modification to be modified, processing is performed at different subsequent times or different locations. Therefore, by first modifying the processing waiting area, the thermal threshold required to produce a processing effect during processing can be effectively reduced, heat accumulation or thermal influence can be reduced, and the processing temperature and temperature gradient can be reduced. Further, due to the effect of reducing the above-described processing temperature and temperature gradient, the method for processing a single crystal quartz material can further avoid the problem of the generation of twins during processing.

Industrial Applicability

[0020] The method for processing a single crystal quartz material of the present invention can effectively avoid the problem of the generation of twins in the processing process of the single crystal quartz material, and can be applied to processing processes such as reactive ion etching, sputtering, laser processing, dry or wet etching, semiconductor processes, etc. (however, not limited thereto).

Explanation of Reference Numerals

[0021] 100: Modifier 200: Processing machine A: Processing waiting area L1, L2: Laser beam M: Single crystal quartz material PR: Photoresist layer R: Area R1: First twin area R2: Second twin area T: Hole S10, S100, S120, S140, S160’, S200: Step

Claims

1. A method for processing single-crystal silica material, To determine the processing-awaited region in the single-crystal quartz material where twinning is likely to occur, and By using a modification machine, the processing difficulty of the processing area on the single-crystal quartz material is reduced. Using a processing machine, the single crystal quartz material is processed in the modified processing waiting area. including, Processing method for single-crystal quartz material.

2. The reduction in processing difficulty includes an improvement of at least 200% in etching speed. A method for processing a single-crystal quartz material according to claim 1.

3. The reformer includes a heater, a cooler, a plasma device, an ion shock device, an ion implanter, or a laser. A method for processing a single-crystal quartz material according to claim 1.

4. The processing machine includes a plasma device, an ion shock device, an ion implantation device, or an ultrafast laser with a pulse width of less than 1 nanosecond. A method for processing a single-crystal quartz material according to claim 1.

5. The processing machine includes a dry etching apparatus or a wet etching apparatus. A method for processing a single-crystal quartz material according to claim 1.

6. The step of modifying the processing await region of the single-crystal quartz material using the modification machine is as follows: While the modifier modifies the processing await region on the single crystal quartz material, the modifier controls the energy applied to the processing await region, thereby keeping the temperature gradient of the processing await region below the upper limit of the temperature gradient. including, A method for processing a single-crystal quartz material according to claim 1.

7. The step of modifying the processing await region of the single-crystal quartz material using the modification machine is as follows: While the modifier modifies the processing await region on the single crystal quartz material, the modifier controls the cumulative energy applied to the single crystal quartz material to keep the temperature of the processing await region below the upper temperature limit. including, A method for processing a single-crystal quartz material according to claim 1.

8. The step of modifying the processing await region of the single-crystal quartz material using the modification machine is as follows: A step of modifying the single crystal quartz material along a specific angle and specific position of the crystal of the single crystal quartz material. including, A method for processing a single-crystal quartz material according to claim 1.

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