Variable pressure administration method and system
The pressure cycling method addresses the challenge of filling substrate gaps by enhancing conformal deposition, achieving efficient and cost-effective material filling without seams or voids.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ASM IP HLDG BV
- Filing Date
- 2025-11-04
- Publication Date
- 2026-05-19
AI Technical Summary
Existing vapor-phase processes struggle to efficiently fill gaps on substrate surfaces, particularly high aspect ratio features, with conventional methods increasing costs and limiting desired material properties.
A method involving pressure cycling in a reaction chamber, including reducing and increasing pressure to deposit precursors and reactants, combined with thermal periodic deposition, to enhance conformal material deposition without seams or voids.
The method effectively fills gaps on substrate surfaces with desired materials, reducing the formation of joints or voids, thus improving deposition efficiency and reducing operational costs.
Smart Images
Figure 2026082759000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to methods and apparatuses for vapor-phase processes. More specifically, the present disclosure relates to a vapor-phase method for depositing a material within a gap on a surface of a substrate, and a reactor system for performing such a method.
Background Art
[0002] Vapor-phase processes such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), and the like are often used to deposit materials on the surface of a substrate, etch materials from the surface of a substrate, and / or clean or treat the surface of a substrate. For example, a vapor-phase process can be used to deposit a layer of material on a substrate to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), and the like.
[0003] In some cases, it may be desirable to fill gaps (e.g., vias or trenches) on the surface of a substrate with a material such as a conductive material or a dielectric material. As the size of device features continues to shrink overall, it has become increasingly difficult to fill the gaps with a material having desired material properties and desired filling properties (e.g., little or no formation of seams and / or voids). This can be particularly true when attempting to fill gaps using conformal deposition techniques for high stack memory structures, especially when the aspect ratio of features such as the number of layers, the number of holes, and / or gaps increases.
[0004] Techniques to improve the filling of gaps on the surface of a substrate include increasing the amount of precursors and / or reactants provided during the deposition process, and operating the deposition process at relatively high pressures. While such techniques work in some applications, they can increase operating costs and / or limit the ability to fill gaps with materials having the desired properties. Therefore, improved methods and reactor systems for depositing materials into gaps on the surface of a substrate are desired.
[0005] Any consideration of problems and solutions in this section is for the sole purpose of providing context to this disclosure, and such consideration should not be construed as acknowledging that any or all of such considerations were known at the time the invention was made. [Overview of the project] [Means for solving the problem]
[0006] This section presents selected concepts in a simplified form, which may be explained in more detail below. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
[0007] Various embodiments of this disclosure provide methods and reactor systems for depositing materials onto the surface of a substrate. As will be described in more detail below, exemplary methods and reactor systems are particularly suited to processes for depositing materials (e.g., conformally) into voids on the surface of a substrate.
[0008] According to various embodiments of the present disclosure, a method for depositing a material in gaps on the surface of a substrate includes providing the substrate in a reaction chamber of a reactor, using a vacuum source, reducing the pressure in the reaction chamber to a first pressure (P1), increasing the pressure in the reaction chamber from P1 to a second pressure (P2), and pulsing a precursor into the reaction chamber over a precursor pulse period while increasing the pressure to P2. According to various examples, the pressure in the reaction chamber continues to increase after the precursor pulse period. According to further examples, the pressure in the reaction chamber continuously increases during a pressurization period. The pressurization period can be, for example, between about 1 second and about 10 seconds, or between about 1 second and about 5 seconds. In at least some examples, the increasing step begins before the step of pulsing the precursor into the reaction chamber. The method may further include reducing the pressure in the reaction chamber to P3, and increasing the pressure in the reaction chamber to P4 after the step of reducing the pressure in the reaction chamber to P3. The method may be or include a thermal periodic deposition process. The material may be a metallic material or a dielectric material, or may include a metallic material or a dielectric material.
[0009] According to further embodiments, the reactor system includes one or more reaction chambers, a precursor gas source, a reaction gas source, a vacuum source, and a controller. The controller may be configured to cause the reactor system to perform the methods described herein.
[0010] The above summary and the following detailed description are illustrative and explanatory only and do not limit the inventions disclosed or claimed herein. [Brief explanation of the drawing]
[0011] A more complete understanding of the embodiments of this disclosure may be obtained by referring to the modes for carrying out the invention and the claims, as considered in relation to the following illustrative drawings.
[0012] [Figure 1]Methods according to various embodiments of this disclosure are shown. [Figure 2] A series of steps according to further exemplary embodiments of this disclosure are shown. [Figure 3] The reactor system according to additional exemplary embodiments of the present disclosure is shown.
[0013] Please note that the elements in the figures are shown for brevity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the figures may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure. [Modes for carrying out the invention]
[0014] The descriptions of exemplary embodiments provided below are illustrative and intended for illustrative purposes only, and are not intended to limit the scope of this disclosure or the claims. Furthermore, the enumeration of embodiments having the described features is not intended to exclude other embodiments having additional features or incorporating different combinations of the described features.
[0015] As will be described in more detail below, various embodiments of this disclosure relate to methods for depositing material into gaps on the surface of a substrate. The methods may be used to deposit materials for a variety of applications, such as forming semiconductor devices, including memory devices or similar. However, unless otherwise stated, the present invention is not necessarily limited to such examples.
[0016] As used herein, the term "substrate" may refer to any one or more underlying materials that include one or more layers and / or on which one or more layers can be deposited. A substrate may include a bulk material such as silicon (e.g., single-crystal silicon), another Group IV material such as germanium, or a composite semiconductor material such as GaAs, and may also include one or more layers that overlap or lie beneath the bulk material. For example, a substrate may include a patterning stack of several layers overlapping the bulk material. The patterning stack may vary depending on the application. Furthermore, a substrate may include various gaps formed on the surface of the substrate, such as recesses, vias, spaces between lines, trenches, and the like.
[0017] In some embodiments, the term "film" refers to a layer extending in a direction perpendicular to the thickness direction. In some embodiments, "layer" refers to a material having a certain thickness formed on a surface, or a synonym for a film structure or a non-film structure. A film or layer may consist of a single film or layer having certain properties, or multiple films or layers, and the boundaries between adjacent films or layers may or may not be clear, and may or may not be established based on physical, chemical, and / or any other properties, formation process or sequence, and / or function or purpose of adjacent films or layers. Furthermore, layers or films may be continuous or discontinuous.
[0018] In this disclosure, the term "gas" may refer to a material that is a gas, a vaporized solid, and / or a vaporized liquid at room temperature and pressure, and which may, depending on the context, consist of a single gas or a mixture of gases. Gases other than process gases, i.e., gases introduced without passing through a gas distribution device such as a showerhead, other gas distribution device, or similar, may include sealing gases such as noble gases, for example, to seal a reaction space.
[0019] In some cases, such as in the context of material deposition, the term "precursor" can refer to a compound involved in a chemical reaction that produces another compound, particularly a compound that constitutes the membrane matrix or the main backbone of the membrane, while the term "reactant" can refer, in some cases, to a compound other than a precursor that reacts with, activates, modifies, or catalyzes the reaction of a precursor. In some cases, the terms "precursor" and "reactant" can be used interchangeably. The term "inert gas" refers to a gas that is hardly involved in the chemical reaction, but unlike reactants, it may hardly become part of the membrane matrix.
[0020] The term cyclic deposition process or cyclical deposition process may refer to a process in which precursors (and / or reactants) are sequentially introduced into a reaction chamber to deposit layers on a substrate, and may include processing techniques such as atomic layer deposition (ALD), periodic chemical vapor deposition (periodic CVD), and hybrid periodic deposition processes that include ALD and periodic CVD components. In some cases, an inert gas and / or one or more reactants can flow continuously during multiple cycles of the periodic process, and the precursors can be pulsed. According to an example of this disclosure, the method is a thermal periodic deposition process. Such a process does not involve the use of plasma or similar to excite the precursors and / or reactants. Rather, such a process typically employs a substrate heater or other heater to drive the desired reaction.
[0021] In this disclosure, any two numbers of a variable can constitute a viable range of that variable, and any range shown may include or exclude an endpoint. Furthermore, in some embodiments, any value of a shown variable (whether shown as approximately) may refer to an exact value or an approximation, and may include an equality, such as the mean, median, representative value, or mode, or similar. For example, the term approximately may refer to + / - 20, 10, 5, 2, or 1 percent of a value. Furthermore, in this disclosure, the terms “includes,” “constitutes,” and “have” and their equivalents may, in some embodiments, independently refer to “typically or broadly include,” “includes,” “essentially consists of,” or “consists of.” According to aspects of this disclosure, any defined meaning of a term does not necessarily exclude the ordinary and customary meanings of that term.
[0022] Referring here to the figures, Figure 1 shows a method 100 according to an embodiment of the present disclosure for depositing a material (e.g., conformally) into gaps on the surface of a substrate. Method 100 includes the steps of supplying the substrate into the reaction chamber of a reactor (step 102), reducing the pressure in the reaction chamber to a first pressure (P1) (step 104), increasing the pressure in the reaction chamber from P1 to a second pressure (P2) (step 106), and pulsing a precursor into the reaction chamber over a precursor pulse period (step 108). As shown, Method 100 may also include the steps of reducing the pressure in the reaction chamber to a third pressure (P3) (step 110), increasing the pressure in the reaction chamber from P3 to a fourth pressure (P4) (step 112), and / or supplying reactants to the reaction chamber (step 114). Method 100 can be suitably used, for example, to fill gaps with material in a manner that results in relatively few or no formation of joints or voids.
[0023] During step 102, the substrate is provided within the reaction chamber. The reaction chamber used during step 102 can be or can include the reaction chamber of a chemical vapor deposition reactor system configured to perform a periodic deposition process. The reaction chamber can be a stand-alone reaction chamber or part of a cluster tool.
[0024] Step 102 can include heating the substrate to a desired deposition temperature within the reaction chamber. In some embodiments of the present disclosure, step 102 includes heating the substrate to a temperature below 800 °C. For example, in some embodiments of the present disclosure, heating the substrate to the deposition temperature can include heating the substrate to a temperature of about 20 °C to about 900 °C, less than 650 °C, less than 600 °C, less than 550 °C, less than 500 °C, about 300 °C to 600 °C, about 300 °C to 650 °C, about 300 °C to 550 °C, about 300 °C to 500 °C, or about 300 °C to 450 °C.
[0025] In addition to controlling the temperature of the substrate, the pressure within the reaction chamber can also be adjusted. For example, in some embodiments of the present disclosure, the pressure within the reaction chamber during step 102 and / or at the start of step 104 can be less than 760 torr, or about 0.2 to about 300 torr, about 5 to about 250 torr, or about 50 to about 120 torr.
[0026] During step 104, the pressure within the reaction chamber is reduced to a first pressure (P1) using a vacuum source such as, for example, the vacuum source described below. The pressure can be reduced to a pressure of less than 100 torr, or about 0.001 torr to about 50 torr, about 0.005 torr to about 25 torr, about 0.01 torr to 20 torr, or about 0.5 torr to 10 torr. The temperature within the reaction chamber can be the same as or similar to the temperature during step 102.
[0027] In an example of this disclosure, the pressure in the reaction chamber is reduced by (for example, further) opening throttle valves downstream of the reaction chamber and upstream of the vacuum source. In a further example, the throttle valves are opened by a command from a controller to control the pressure in the reaction chamber to P1 as described above.
[0028] During step 106, the pressure in the reaction chamber increases from P1 to a second pressure (P2). In some cases, P2 may be the same as or similar to the pressure in the reaction chamber during step 102. Specifically, P2 is approximately 60 Torr to 100 Torr, or approximately 70 Torr to 90 Torr. In more specific examples, P1 is less than 20 (e.g., approximately 0.01 Torr to 20 Torr or approximately 0.5 Torr to 10 Torr), and P2 is greater than 60 Torr (e.g., approximately 60 Torr to 100 Torr, or approximately 70 Torr to 90 Torr). In further examples, P2 is twice, five times, seven times, or more than ten times P1. In some cases, the reaction chamber may not reach P2 during step 106 and / or step 108. In some cases, a command from the controller may attempt to control the pressure to P2 using a throttle valve.
[0029] During step 108, the precursor and / or reactant are pulsed within the reaction chamber over a precursor pulse period. The examples described below refer to precursor pulses. However, the examples are not limited in this way, and the pulses described below may additionally or alternatively include reactants.
[0030] In one example, the precursor is pulsed into the reaction chamber while increasing the pressure to P2. In one example of this disclosure, step 106 is started before step 108. In a further example, steps 106 and 108 overlap, as will be described in more detail below in relation to Figure 2. In a further example, after the precursor pulse step 108 is completed, the pressure in the reaction chamber continues to increase during step 106. In a further additional example, the pressure in the reaction chamber increases continuously during the pressurization period in step 106. The pressurization period may be the period during which the controller signals the throttle valve to control the pressure in the reaction chamber, which is P1, to pressure P2. Alternatively, the pressurization period may begin from the point when the throttle valve starts controlling the pressure from P1 to P2. The duration of the pressurization period may be about 1 second to about 10 seconds, or about 1 second to about 5 seconds.
[0031] The duration of the precursor pulse period can be shorter than the pressurization period. For example, the duration of the precursor pulse period can be approximately 1% to 90%, 5% to 30%, or 10% to 20% of the pressurization period. As an example, the precursor pulse period can be approximately 0.2 seconds to 10 seconds, or 0.3 seconds to 2 seconds.
[0032] After step 106, which increases the pressure in the reaction chamber, and / or after step 108, method 100 may include step 110, which reduces the pressure in the reaction chamber to a third pressure (P3). P3 may be, for example, substantially the same as P1. During or at the start of step 110, the controller may send a signal to the throttle valve to control the pressure in the reaction chamber, for example, by opening the throttle valve. This step can be used, for example, to purge the reaction chamber.
[0033] Following step 110, method 100 may include step 112 of increasing the pressure in the reaction chamber to P4. Step 112 can be used to prepare the reaction chamber for the next step, such as repeating steps 104-108 or 110, or providing the reactants.
[0034] Although not illustrated separately, method 100 may include a step of reducing the pressure in the reaction chamber after step 112 and before step 114. This step of reducing the pressure in the reaction chamber after step 112 may be the same as or similar to step 104. For example, the pressure may be reduced to the pressure described above in relation to P1.
[0035] During step 114, reactants may be supplied to the reaction chamber. Step 114 may be similar to step 108, except that reactants are supplied to the reaction chamber instead of the precursor. In some cases, step 114 may differ from step 108. For example, the pressure in the reaction chamber may remain substantially constant during step 114, rather than increasing. In other cases, step 114 may include increasing the pressure (for example, continuously) (to P2 or P4), and optionally continuing after a pulse of reactants, for example, in the context of a precursor pulse. P4 may be within the range of P2 as described above. In some cases, P4 may be the same as P2.
[0036] Method 100 can be used to deposit various materials. For example, metallic materials or dielectric materials can be deposited using Method 100.
[0037] Exemplary metals that can be deposited using Method 100 include transition metals such as molybdenum, tungsten, tantalum, titanium, niobium, scandium, and similar. Exemplary precursors used to deposit metals may include metal halides and / or oxyhalides that may contain such metals. Specific examples include metal chlorides and metal oxychlorides such as titanium tetrachloride. Exemplary reactants used to deposit metals include reducing agents. Exemplary reducing agents include forming gases (H2+N2), ammonia (NH3), hydrazine (N2H4), alkylhydrazines (e.g., tertiary butylhydrazine (C4H)). 12Examples include one or more of the following: N2), molecular hydrogen (H2), hydrogen atom (H), hydrogen plasma, hydrogen radical, hydrogen excited species, (e.g., C1-C4) alcohols, (e.g., C1-C4) aldehydes, (e.g., C1-C4) carboxylic acids, (e.g., B1-B12) boranes, or amines.
[0038] Exemplary dielectric materials that can be deposited using Method 100 include high-k (e.g., higher dielectric constant than silicon oxide) materials such as metal oxide dielectric materials. Exemplary metal oxide dielectric materials include transition metal oxides and post-transition metal oxides. Specific examples include aluminum oxide, titanium oxide, and similar materials. Exemplary precursors used to deposit dielectric materials include organometallic compounds such as C1-C4 alkyl organometallic compounds (e.g., trimethylaluminum). Exemplary reactants used to deposit dielectric materials include oxidizing agents, nitrides, and / or carbides.
[0039] Examples of oxidizing agents include O2, water (H2O), hydrogen peroxide (H2O2), ozone (O3), and one or more nitrogen oxides such as nitric oxide (NO), nitrous oxide (N2O), and nitrogen dioxide (NO2).
[0040] Examples of nitrides include nitrogen (N2) and ammonia (NH3). 3) The nitrogen reactants can be selected from one or more of the following: hydrazine (N2H4) or hydrazine derivatives, mixtures of hydrogen and nitrogen, nitrogen ions, nitrogen radicals, nitrogen excited species, and other nitrogen and hydrogen-containing gases. The nitrogen reactants contain or may consist of nitrogen and hydrogen. In some cases, the nitrogen reactants do not contain diatomic nitrogen.
[0041] Examples of carbides include acetylene, ethylene, alkyl halides, alkene halides, metal alkyl compounds, and similar compounds. Examples of alkyl halides include CX4, CHX3, CH2X2, and CH3X (wherein X is F, Cl, Br, or I). Examples of alkene halides include C2H3X, C2H2X2, C2HX3, and C2X4 (wherein X is F, Cl, Br, or I). Examples of alkyne halides include C2X2 and HC2X (wherein X is F, Cl, Br, or I). Examples of metal alkyl compounds include AlMe3, AlEt3, Al(iPr)3, Al(iBu)3, Al(tBu)3, GaMe3, GaEt3, Ga(iPr)3, Ga(iBu)3, Ga(tBu)3, InMe3, InEt3, In(iPr)3, In(iBu)3, In(tBu)3, ZnMe2, and ZnEt2.
[0042] Figure 2 shows a series of steps for valve position (line 202), reaction chamber pressure (line 204), and precursor / reactant doping (line 206) suitable for use in Method 100. The valve position can be represented by 0 if closed and 100 if fully open. In the illustrated example, the chamber pressure is expressed in Torrell units. The doping of precursor and / or reactants is represented on a scale from 0 to 1, where 0 represents virtually no flow and 1 represents maximum flow rate.
[0043] As shown in the diagram, during period T1, the valve (e.g., throttle) is opened, and the pressure in the reaction chamber decreases to P1. During period T2, the valve is at least partially closed, and the pressure in the reaction chamber increases to P2, which may be equal to P4. During T2, the precursor and / or reactant can be pulsed into the reaction chamber over the administration period as described above. During T3, the pressure in the reaction chamber can be reduced to pressure P3, for example, by opening the valve. During T4, the pressure in the reaction chamber can be increased to P4 by closing the valve.
[0044] Figure 3 shows an exemplary reactor system 300 according to an additional exemplary embodiment of the present disclosure. The reactor system 300 includes a reactor 302, a susceptor 304, gas sources 306-310, a gas distribution device 320, a vacuum source 312, and a controller 322. Not shown, the reactor system 300 may additionally include direct and / or remote plasma and / or thermal excitation devices for one or more reactants and / or within the reactor 302.
[0045] Reactor 302 may include a reaction chamber 324 suitable for gas-phase reactions. Reactor 302 may be formed from a suitable material such as quartz, metal, or the like, and may be configured to hold one or more substrates for processing. The reactor system 300 may include any suitable number of reactors 302 and may optionally include one or more substrate handling systems. Reactor 302 may be a standalone reactor or part of a cluster tool.
[0046] Reactor 302 may be configured as a periodic deposition process reactor (e.g., a periodic CVD reactor), an ALD reactor, or similar. Reactor 302 may be configured to deposit various films or layers, such as those described above.
[0047] The susceptor 304 is configured to hold the substrate 326 in place during processing. One or more sections of the susceptor 304 may be heated, cooled, or set to ambient process temperature during processing. According to an example of the present disclosure, the susceptor 304 includes a temperature control device 328, such as a heater (e.g., a resistance heater) and / or a cooling device (e.g., a conduit for a cooling medium such as chilled water).
[0048] In the illustrated example, the reactor system 300 includes a mechanism 330 for moving the susceptor 304 from the lower chamber region 332 to the upper chamber region 334. The mechanism 330 may include any suitable device capable of moving the susceptor 304. For example, the mechanism 330 includes a servo motor that drives the susceptor 304 along a vertical axis. The mechanism 330 may preferably be located outside the reaction chamber 324.
[0049] The susceptor 304 can be formed from any suitable material, such as ceramic materials like boron nitride, aluminum nitride, and quartz, and ceramic-coated materials such as ceramic-coated metal. The susceptor 304 may also include a resistance heating material. Suitable exemplary materials for the resistance heating material include tungsten (W), nichrome (NiCr), cupronickel (CuNi), graphite, molybdenum disilicide (MoSi2), or any other suitable heating material. The resistance heating material may be coated (e.g., patterned) on a ceramic or ceramic-coated metal, for example. The susceptor 304 may include an additional protective layer formed on top of the resistance heating material. The protective layer may be formed from, for example, a ceramic material.
[0050] Gas sources 306-310 may include any suitable container and the respective materials contained therein. For example, gas source 306 may include a precursor, gas source 308 may include a reactant, and gas source 310 may include an inert gas. Gas sources 306-310 may be coupled to the reaction chamber 324 via a gas distribution device 320.
[0051] The gas distribution device 320 is configured to receive one or more gases during substrate processing and to facilitate distribution to the reaction chamber 324. The gas distribution device 320 may include an inlet 333 and a plurality of holes 335 coupled to the plenum 336.
[0052] The vacuum source 312 may include one or more vacuum sources. Exemplary vacuum sources include one or more dry vacuum pumps and / or one or more turbomolecular pumps. A (e.g., throttle) valve 338 may be located within the wiring that fluidly connects the reaction chamber 324 to the vacuum source 312.
[0053] The controller 322 may be configured to perform various functions and / or processes as described herein. For example, the controller 322 may be configured to perform the method and / or sequence described in relation to Figure 1 and / or Figure 2. The controller 322 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although the controller 322 is shown as a single unit, it may alternatively include multiple devices. For example, the controller 322 can be used to control the gas flow rate of one or more gases from gas sources 306-310 via wiring 314, 316, 318 and one or more valves 342, 344, 346, to move the susceptor 304 between first positions, to control the pressure in the reaction chamber 324 (e.g., using valve 338), and / or to pulse the reactants and / or precursors described herein (e.g., using one or more valves 342-346).
[0054] While exemplary embodiments of the Disclosure are described herein, it should be understood that the Disclosure is not limited thereto. For example, assemblies, reactors, systems, and methods are described in relation to various specific configurations, but the Disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements of the exemplary assemblies, reactors, systems, and methods described herein may be made without departing from the spirit and scope of the Disclosure.
[0055] The subject matter of this disclosure includes all novel and non-obvious combinations and secondary combinations thereof of the various processes, systems, assemblies, reactors, components, and configurations disclosed herein, as well as other features, functions, operations, and / or properties, and any and all equivalents thereof.
Claims
1. A method for depositing a material in gaps on the surface of a substrate, wherein the method is To provide the substrate inside the reaction chamber of the reactor, Using a vacuum source, the pressure inside the reaction chamber is reduced to a first pressure (P1), The pressure in the reaction chamber is increased from P1 to a second pressure (P2), The process involves increasing the pressure to P2 while pulsing the precursor into the reaction chamber over the precursor pulse period, A method that includes this.
2. The method according to claim 1, wherein the pressure in the reaction chamber continues to increase after the precursor pulse period.
3. The method according to claim 1, wherein the pressure in the reaction chamber is continuously increased during the pressurization period.
4. The method according to claim 3, wherein the duration of the pressurization period is 1 second to 10 seconds, or 1 second to 5 seconds.
5. The method according to claim 1, wherein P2 is five times or more P1.
6. The method according to claim 1, wherein the duration of the precursor pulse period is 0.2 seconds to 10 seconds, or 0.3 seconds to 2 seconds.
7. The method according to claim 1, wherein P1 is 0.01 Tor to 20 Tor, or 0.5 Tor to 10 Tor.
8. The method according to claim 1, wherein P2 is 60 Tor to 100 Tor, or 70 Tor to 90 Tor.
9. The method according to claim 1, wherein P1 is less than 20 Tor and P2 is greater than 60 Tor.
10. The method according to claim 1, wherein the increasing step is started before the step of pulsing the precursor into the reaction chamber.
11. The method according to claim 1, further comprising the step of reducing the pressure in the reaction chamber to a third pressure (P3) after the step of increasing the pressure in the reaction chamber.
12. The method according to claim 11, further comprising the step of increasing the pressure in the reaction chamber to P4 after the step of reducing the pressure in the reaction chamber to P3.
13. The method according to claim 1, wherein the method is a thermal periodic deposition process.
14. The method according to claim 1, comprising conformally depositing the material within the gap.
15. The method according to claim 14, comprising filling the gap with the material.
16. A method for conformally depositing a material into gaps on the surface of a substrate, wherein the method is To provide the substrate inside the reaction chamber of the reactor, The pressure inside the reaction chamber is reduced to a first pressure (P1), The pressure inside the reaction chamber is increased from P1 to a second pressure (P2), A method comprising pulsing the precursor into the reaction chamber over a precursor pulse period while increasing the pressure to P2.
17. The method according to claim 16, wherein the pressure in the reaction chamber is continuously increased during the pressurization period.
18. The method according to claim 16, wherein the material includes a metal.
19. The method according to claim 16, wherein the material includes a dielectric material.
20. A reactor system, A controller configured to perform the method described in claim 16, The reactor includes, Reactor system.