semiconductor devices

Abstract

The present invention provides a semiconductor device having a heating device which is arranged in multiple bases of a cavity and has multiple chucks arranged in correspondence with the multiple bases. [Solution] The semiconductor device 300 includes a gas inlet 3012 into which one or more gases are introduced, a cavity 3013 connected to the gas inlet and having multiple bases, a gas outlet 3025 communicating with the multiple bases within the cavity, and a heater 3014 having multiple chucks arranged in correspondence with the multiple bases, so that one or more gases can flow into the gas outlet through the multiple bases and multiple chucks.

Description

[Technical Field]

[0001] The present invention relates substantially to semiconductor devices, and more particularly to a multi-chamber laminar flow deposition apparatus. [Background technology]

[0002] Semiconductor devices can undergo a film deposition and coating process on wafers using processing techniques such as atomic layer deposition (ALD) coating, chemical vapor deposition (CVD), and plasma-enhanced chemical vapor deposition (PECVD).

[0003] A film deposition apparatus or device can perform film deposition coating on a wafer placed in the apparatus or device by supplying one or more reactive materials (also referred to as reaction gases or process gases). [Overview of the project] [Problems that the invention aims to solve]

[0004] Embodiments of the present disclosure provide a semiconductor device comprising: a gas inlet into which one or more gases are introduced; a cavity connected to the gas inlet and having a plurality of bases; a gas outlet communicating with the plurality of bases within the cavity; and a heating device having a plurality of chucks arranged in the plurality of bases of the cavity and corresponding to the plurality of bases, such that one or more gases can flow into the gas outlet through the plurality of bases and the plurality of chucks. [Means for solving the problem]

[0005] Some other embodiments of the present disclosure provide a semiconductor device comprising: a first base having a front and a back, and a first main gas introduction channel, a second main gas introduction channel, a first divided channel, and a first through-hole; a second base connected to the back of the first base and having a first main gas introduction channel, a second main gas introduction channel, a second divided channel, and a second through-hole; and a base cover plate connected to the front of the first base and having a first main gas introduction channel, a second main gas introduction channel, a third divided channel, and a third through-hole, through which a first gas is introduced via the first main gas introduction channel and a second gas is introduced via the second main gas introduction channel, wherein the first gas and the second gas are supplied to the front of the first base via the first through-hole and the third through-hole, and the first gas and the second gas are also supplied to the back of the first base via the first through-hole and the second through-hole.

[0006] It should be understood that the broad embodiments of the present invention, and each of their features, may be used in combination, interchangeably, and / or independently, and are not intended to limit reference to a single broad embodiment.

[0007] Aspects of this disclosure will be readily apparent from the attached drawings and the detailed embodiments described below. Note that various features may not be depicted to actual scale. In fact, for clarity, the dimensions of various features may have been arbitrarily increased or decreased. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view of a semiconductor device according to some embodiments of the present disclosure. [Figure 2] This is a cross-sectional view of a semiconductor device according to another embodiment of the present disclosure. [Figure 3A] A side view showing the external structure of a semiconductor device according to another embodiment of the present disclosure. [Figure 3B] Figure 3A is a cross-sectional view of the semiconductor device shown. [Figure 3C] A schematic perspective view of a heater according to some embodiments of the present disclosure. [Figure 3D] A cross-sectional view of the heater shown in FIG. 3C. [Figure 3E] A schematic perspective view of a cavity according to some embodiments of the present disclosure. [Figure 3F] A cross-sectional view of a cavity and a heater according to some embodiments of the present disclosure. [Figure 3G] Another cross-sectional view of a cavity and a heater according to some embodiments of the present disclosure. [Figure 3H] A top view of a base according to some embodiments of the present disclosure. [Figure 4] A schematic diagram showing the operation of a semiconductor device according to some embodiments of the present disclosure.

Mode for Carrying Out the Invention

[0009] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are also described below. In particular, those descriptions are merely examples and are not intended to be limiting. In the following description of the present application, the first feature formed on the second feature may include embodiments in which the first feature and the second feature are formed by direct contact, and also include embodiments in which the first feature and the second feature cannot be in direct contact due to the formation of additional features between the first feature and the second feature. Further, in the present application, reference numerals and / or characters may be repeatedly used in the examples. This repetition is for simplicity and clarity and does not indicate the relationship between the various described embodiments and / or configurations.

[0010] Embodiments of the present application are described in detail below. However, it should be understood that many applicable concepts provided by the present disclosure can be implemented in a plurality of specific environments. The specific environments described are merely illustrative and do not limit the scope of the present disclosure.

[0011] Figure 1 is a cross-sectional view of a semiconductor device according to some embodiments of the present disclosure.

[0012] Referring to Figure 1, the semiconductor device (100) may have, for example, a cavity (101). The cavity (101) has a chamber (121) and a gas introduction passage (131) inside. One or more wafers (102) to be processed can be housed in the chamber (121), each wafer (102) having a top surface and a bottom surface. The inner wall of the cavity (101) may be heated in any way to form an inner wall heater, to heat the wafers (102) in the chamber (121), and to promote film deposition coating.

[0013] The gas (11) (shown by a unidirectional arrow in Figure 1) may contain one or more reactants (not shown in Figure 1) and may be supplied into the chamber (121) via a gas introduction channel (131) at the top of the cavity (101). The gas (11) supplied into the chamber (121) may be circulated further within the chamber (121) to diffuse onto the top and bottom surfaces of each wafer (102) to be processed, or a film coating may be applied to the top and bottom surfaces of each wafer (102) using the gas (11) supplied into the chamber (121). Any residual gas (11) not used for film coating of the wafers (102) may be discharged from the chamber (121) via a gas outlet (141) at the bottom of the cavity (101).

[0014] During film deposition coating, there is no forced flow of gas (11) on the upper and lower surfaces of each wafer (102); instead, gas diffusion is utilized to deliver gas (11) to the upper and lower surfaces of each wafer (102). To ensure uniformity of the film, the residence time of gas (11) in the chamber (121) can be appropriately increased. By increasing the residence time of the gas in the chamber, the cycle time of the film deposition coating reaction can be extended, for example (but not limited to).

[0015] Since each wafer (102) to be processed is exposed to gas (11) on both its top and bottom surfaces, the semiconductor device (100) shown in Figure 1 is suitable for applications where coating is required on both the top and bottom surfaces of the wafer.

[0016] Furthermore, since the wafers are heated using the inner wall heater of the cavity (101) rather than heating each wafer separately, the preheating time of the cavity (101) is extended, which further reduces the temperature difference between different parts of the same wafer and also reduces the temperature difference between wafers.

[0017] Figure 2 is a cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0018] The semiconductor device (200) shown in Figure 2 may use cavity plates (201) and (202) that define the transverse gas flow path (211). Therefore, the semiconductor device (200) can be said to have a single-layer cross-flow structure.

[0019] A single wafer (203) to be processed is placed on the cavity plate (202). Gas (21) (shown by a unidirectional arrow in Figure 2) can enter the transverse gas channel (211) from one side of the cavity (201) and be discharged from the transverse gas channel (211) on the other side of the cavity (201).

[0020] Thus, the semiconductor device (200) shown in Figure 2 does not rely on the diffusion of gas (21) on the surface of the wafer (203). Instead, it applies a film-forming coating to the upper surface of the wafer (203) by forcing the gas (21) to flow in one direction across the upper surface of the wafer (203) (for example, from left to right as shown in Figure 2). Therefore, in the semiconductor device (200) shown in Figure 2, a more uniform film-forming coating can be applied to the upper surface of the wafer (203) by forcing the gas (21). No film-forming coating is applied to the lower surface of the wafer (203).

[0021] Since only one wafer (203) is processed at a time, the production capacity of the semiconductor device (200) shown in Figure 2 is limited to some extent.

[0022] Figure 3A is a side view showing the external structure of a semiconductor device according to another embodiment of the present disclosure.

[0023] The semiconductor device (300) may have a cavity (301), a cavity (302), and a frame (303) supporting these cavities (301) and cavities (302).

[0024] The cavity (301) may have a cover plate (3011) and a gas inlet (3012) leading to the interior of the cavity (301).

[0025] The cavity (302) may be connected to the cavity (301) by bolts, for example, and may communicate with the cavity (301). The cavity (302) may, in particular, have a valve body (3021), a mechanism (3026), and a gas outlet (3025).

[0026] It should be understood that cavities (301) and (302) may be a single cavity and are not limited to the segmented structure shown in Figure 3A. The internal structure of the semiconductor device (300) shown in Figure 3A is described in detail below.

[0027] Figure 3B is a cross-sectional view of the semiconductor device shown in Figure 3A.

[0028] Referring to Figure 3B, in the semiconductor device (300), the cavity (301) may have a cavity (3013) which may house a heater (3014) (for example, the portion enclosed by the dashed line in Figure 3B). The heater (3014) may be connected to a mechanism (3026). The heater (3014) may be moved by the operation of the mechanism (3026) in order to move in or out of the cavity (3013).

[0029] The cavity (3013) may be connected to the gas inlet (3012) for gas to be introduced through the gas inlet (3012). The cavity (3013) may be connected to the gas outlet (3025) for gas to be discharged. It should be understood that the cavity (3013) may be a multi-layer cavity. The heater (3014) may be a multi-layer heater.

[0030] The cavity (302) may have a wafer supply port (3022). The cavity (302) may have a jack rod (3024). The wafer supply port (3022) may be opened and closed under the control of a valve body (3021). Wafers to be processed (not shown in Figure 3B) may be transported in or out of the cavity (302) via the wafer supply port (3022).

[0031] If a wafer to be processed (not shown in Figure 3B) needs to be moved in or out of the heater (3014), the heater (3014) is moved near the wafer supply port (3022) by the operation of the mechanism (3026), and with the help of the jack rod (3024), the wafer is placed on or lifted from the heater (3014).

[0032] The inner wall heater (3023) may be located on the inner wall of cavity (301). The inner wall heater (3023) may be located on the inner wall of cavity (301) and / or on the inner wall of cavity (302). The inner wall heater (3023) may be located on the inner walls of cavity (301) and cavity (302). The inner wall heater (3023) may heat the wafer to be processed.

[0033] Figure 3C is a schematic three-dimensional view of a heater according to some embodiments of the present disclosure.

[0034] Referring to FIG. 3C, the heater (3014) may have chucks (30171), chucks (30172), chucks (30173), chucks (30174), chucks (30175), chucks (30176), chucks (30177), chucks (30178), chucks (30179), and chucks (3017 10 ). The wafer may be placed on each of the chucks (30171) to (3017 10 ).

[0035] Inside the chucks (30171) to (3017 10 ), corresponding heating wires (30181), heating wires (30182), heating wires (30183), heating wires (30184), heating wires (30185), heating wires (30186), heating wires (30187), heating wires (30188), heating wires (30189), and heating wires (3018 10 ) are arranged respectively. The heating wires (30181), heating wires (30182), heating wires (30183), heating wires (30184), heating wires (30185), heating wires (30186), heating wires (30187), heating wires (30188), heating wires (30189), and heating wires (3018 10 ) are arranged near the corresponding chucks (30171) to (3017 10 ). For example, in order to heat the wafer placed on the chuck (30175), the heating wire (30185) may be arranged inside the corresponding chuck (30175). For example, in order to heat the wafer placed on the chuck (30177), the heating wire (30187) may be arranged near the corresponding chuck (30177).

[0036] Each of the heating wires (30181) to (3018 10 ) may be connected to the lead wire (3015). Each of the heating wires (30181) to (3018 10 ) may be connected to the lead wire (3016). Each of the heating wires (30181) to (3018 10Each of these can receive a signal (e.g., a temperature control signal) via a lead wire (3015). Heating wires (30181)~(3018 10 Each of the heaters (3015) may receive a signal (e.g., a temperature control signal) via a lead wire (3016). To receive a signal, lead wire (3015) may be extended to the surface of heater (3014). To receive a signal, lead wire (3016) may be extended to the surface of heater (3014).

[0037] Heating wire (30181)~(3018 10 It should be understood that the chuck may be replaced with any heating component for heating the corresponding chuck and the wafer on it.

[0038] In other embodiments of this disclosure, the heater (3014) may be, but is not limited to, the 10 chucks shown in Figure 3C (i.e., chuck (30171) to chuck (30171). 10 It should be understood that the chucks may have more or fewer than 10. In other embodiments of the disclosure, one corresponding heating element may be provided for each chuck. In other embodiments of the disclosure, multiple corresponding heating elements may be provided for each chuck. In other embodiments of the disclosure, one corresponding heating element may be provided for every multiple chucks.

[0039] Furthermore, the heating wire is not limited to being wound or formed as shown in Figure 3C, as long as it can heat the chuck.

[0040] Thus, the inner wall heaters (3023) in the inner walls of the cavities (301) and (302) can not only heat and / or preheat the entire wafer to be processed, but also heat each wafer individually for each corresponding chuck.

[0041] The individual heating structure shown in Figure 3C helps to further improve temperature uniformity at any point on the same wafer surface, as well as temperature uniformity between multiple wafers, thereby further improving the quality of the coating.

[0042] Figure 3D is a cross-sectional view of the heater shown in Figure 3C.

[0043] Referring to Figure 3D, the heater (3014) is connected from chuck (30171) to chuck (3017 10 ) includes wafers (30191), (30192), (30193), (30194), (30195), (30196), (30197), (30198), (30199), and (3019 10 ) are placed on each.

[0044] Chuck (30171) ~ Chuck (3017 10 ) Heating wires (30181)~(3018 10 Since ) are arranged in each place, wafers (30191)~(3019 10 ) allows for individual temperature control of each heating wire (30181)~(3018 10 ) can be heated by.

[0045] Signals for individual temperature control may be received through lead wires (3015) and (3016) reaching the top surface of the heater (3014). In the embodiment shown in Figure 3D, heating wires in odd-numbered chucks (30171), chuck (30173), chuck (30175), chuck (30177), and chuck (30179) may be led out via lead wire (3015). In the embodiment shown in Figure 3D, even-numbered chucks (30172), chuck (30174), chuck (30176), chuck (30178), and chuck (3017 10The heating wire in the chuck of the heater (3014) may be led out via a lead wire (3016). However, it should be understood that in other embodiments, the heating wire in the chuck of the heater (3014) may be led out in any other way to another location of the heater (3014).

[0046] Figure 3E is a schematic three-dimensional view of a cavity according to some embodiments of the present disclosure. For example, the heater (3014) shown in Figure 3C may be housed in the cavity (3013) shown in Figure 3E.

[0047] Referring to Figure 3E, the cavity (3013) is made up of the base cover plate (3033), as well as the base (30131), base (30132), base (30133), base (30134), base (30135), base (30136), base (30137), base (30138), base (30139), and base (3013 10 The bases may be connected to each other, for example, by bolts.

[0048] The gas inlet (3012) includes gas inlets (30121), (30122), and (30123). Gas (e.g., residual gas after the completion of the coating process) can be discharged out of the cavity (3013) via a gas outlet (3025).

[0049] In other embodiments of this disclosure, the cavity (3013) is a number of bases (i.e., base (30131) to base (3013) 10 It is important to understand that it may have ) and that its number may differ from the number shown in Figure 3E.

[0050] Furthermore, it should be understood that in other embodiments of this disclosure, the cavity (3013) may be provided with a number of gas inlets, which may differ from the number shown in Figure 3E.

[0051] Figure 3F is a cross-sectional view showing a cavity and heater according to several embodiments of the present disclosure.

[0052] For example, the heater (3014) shown in Figure 3C or Figure 3D may be housed in the cavity (3013) shown in Figure 3E, and Figure 3F is a cross-sectional view after the heater (3014) has been housed in the cavity (3013). Cavity (3013) from base (30131) to base (3013 10 The upper surface of (3014) may be substantially coplanar with the corresponding upper surface of each chuck (for example, chuck (30171) to chuck (30172) in Figure 3D).

[0053] Gas (321) may flow into the cavity (3013) via the gas inlet (30121). Gas (322) may flow into the cavity (3013) via the gas inlet (30122). Gas (321) and gas (322) may be the same or different process gases, for example, and may be indicated by the unidirectional arrows and unidirectional dashed arrows shown in Figure 3F, respectively.

[0054] Base (30131) ~ Base (3013 10 Each of these may have a main gas inlet (3113) and a main gas inlet (3123).

[0055] The main gas inlet passage (3113) penetrates the base cover plate (3033) and base (30131) to base (30139) in the longitudinal direction, and base (3013 10 ) may have divided passages (31131) to (31136) that connect to the entire main gas introduction passage (3113).

[0056] The gas (321) that flows into the cavity (3013) may flow into the main gas inlet (3113) and the divided channel (31131) to the divided channel (31136), and through the through hole (3201) to the through hole (320 11 It may flow through to the heater (3014) via ). Through hole (3201) to through hole (320 11Each of these may extend within the corresponding substrate in a direction substantially perpendicular to the main plane. For example, a through-hole (3201) extends within the base cover plate (3033) in a direction perpendicular to the main plane (and substantially perpendicular to the main gas introduction channel (3113)) and communicates with a row of downward-sloping capillary channels. In this way, gas (321) can be supplied to the surface of the wafer corresponding to the base (30131) through the main gas introduction channel (3113) and the divided channel (31131), as well as through the through-hole (3201) and its capillary channels.

[0057] It should be understood that the through-holes (3201) and their capillary channels are not limited to the configuration shown in Figure 3F, and may be arranged in any manner or in any number, as long as the gas (321) flowing through the main gas introduction channel (3113) and the divided channel (31131) can be reliably supplied to the wafer surface corresponding to the base (30131).

[0058] Similarly, the main gas inlet (3123) may penetrate the base cover plate (3033) and the base (30131) to base (30138) longitudinally to reach the base (30139), and may have divided passages (31231) to divided passages (31235) that are all in communication with the main gas inlet (3113). The gas (322) that flows into the cavity (3013) may flow into the main gas inlet (3123) and divided passages (31231) to divided passages (31235), and through holes (3201) to through holes (320 11The gas may flow through to the heater (3014). For example, the through-hole (3202) extends through the base (30131) in a direction perpendicular to the main plane (and approximately perpendicular to the main gas introduction passage (3123)) and communicates with two rows of capillary passages inclined upward and downward. In this way, the gas (322) flowing through the main gas introduction passage (3123) and the divided passage (31231), as well as through the through-hole (3201), may be transported to the surface of the wafer corresponding to the base (30131) through the upward-inclined capillary passage, and may also be transported to the surface of the wafer corresponding to the base (30132) through the downward-inclined capillary passage. It should be understood that the through-holes (3202) and their two rows of capillary channels having different orientations are not limited to the configuration shown in Figure 3F, and may be arranged in any manner or in any number, as long as the gas (322) flowing through the main gas introduction channel (3123) and the split channel (31231) can be reliably supplied to the wafer surfaces corresponding to the bases (30131) and (30132).

[0059] The gases (321) and (322) flowing into the cavity (3013) may further flow along the upper surface of the wafer located above each chuck of the heater (3014) (for example, flowing from left to right as shown in Figure 3F) to provide a uniform coating on the wafer surface. In one embodiment, gas (321) may enter the cavity (3013) before gas (322), then the cavity (3013) may be purged, and then gas (322) may be supplied. Similarly, gas (322) may enter the cavity (3013) before gas (321), then the cavity (3013) may be purged, and then gas (321) may be supplied. In other embodiments, gases (321) and (322) may enter the cavity (3013) simultaneously. It should be understood that the above application scenarios may be flexibly adapted to actual needs.

[0060] The residual gas (321) may continue to flow in one direction (for example, a transverse direction from left to right as shown in Figure 3F) until it is discharged outside the cavity (3013) through the gas outlet (3025). The residual gas (322) may continue to flow in one direction (for example, a transverse direction from left to right as shown in Figure 3F) until it is discharged outside the cavity (3013) through the gas outlet (3025).

[0061] The method of supplying gas to the top surface of the wafer is not limited to the combination and assignment of gas (321) and gas (322) along the divided channels (3113) and (3123) as shown in Figure 3F. Instead, gas (321) and gas (322) may be assigned and combined in any way, as long as they are reliably supplied to the top surface of the wafer.

[0062] Figure 3G is another cross-sectional view showing a cavity and heater according to some embodiments of the present disclosure.

[0063] The heater (3014) shown in Figures 3G and 3D can be housed in the cavity (3013) shown in Figure 3G. The cavity (3013) is located between the base (30131) and the base (30133 10 The top surface of the heater (3014) is where each chuck (for example, chuck (30171) to chuck (3017) in Figure 3D 10 It may be substantially coplanar with the corresponding upper surface of ))

[0064] Gas (323) (unidirectional arrow in Figure 3G) runs from base (30131) to base (3013 10 The purging channel (3213) that penetrates the base (30131) to the base (3013 10 The gas may flow along the entire circumference of each of the cavities (shown in Figure 3H, which will be described in detail below) and can eventually be discharged outside the cavity (3013) through the gas outlet (3025).

[0065] The gas (323) may be, for example, a purge gas. To prevent contaminants from forming inside the cavity (3013) due to process gas leakage, the gas (323) is passed from base (30131) to base (3013 10 Each of them can be purged.

[0066] Figure 3H is a top view of a base according to some embodiments of the present disclosure.

[0067] Base (30131) ~ Base (3013 10 Since each of these can have substantially the same structure, only the base (30131) is shown in Figure 3H as an example to illustrate the structure of the base as seen from above.

[0068] Referring to Figure 3H, for example, a gas (323) (unidirectional arrow in Figure 3H), which may be a purge gas, may flow through a purge channel (3213) that penetrates the base (30131), may flow along the entire circumference of the base (30131) (unidirectional arrow in Figure 3H), and may also be discharged outside the cavity through a gas outlet (3025).

[0069] A notch (3413) located in the center of the base (30131) may be formed to accommodate, for example, a heater (3014) as shown in Figures 3C and 3D.

[0070] In this way, particles formed inside the cavity due to process gas leakage can be discharged outside the cavity by gas (323).

[0071] Figure 4 is a schematic diagram illustrating the operation of a semiconductor device according to some embodiments of the present disclosure.

[0072] Referring to Figure 4, in the semiconductor device (400), the heater (4014) can be moved longitudinally in and out of the cavity (4013) in response to the operation of the mechanism (4026) (up and down arrows in Figure 4).

[0073] First, the mechanism (4026) can be moved downward to move the heater (4014) outside the cavity (4013) and closer to the wafer supply port (4022).

[0074] Subsequently, for example (but not limited to), the wafer to be processed may be transported to the chuck of the heater (4014) via the wafer supply port (4022) under the support of the jackrod (4024), following the movement of a robotic arm. Furthermore, the jackrod (4024) is controlled to descend so that the wafer is smoothly placed on the surface of the chuck. It should be understood that this operation may be performed periodically to transport multiple wafers to be processed to multiple chucks of the heater (4014).

[0075] After all the wafers have been moved into the heater (4014), the mechanism (4026) moves upward to move the heater (4014) into the cavity (4013) so that the wafer coating process can be performed.

[0076] After the wafer coating process is complete, the mechanism (4026) may be moved downward again to move the heater (4014) out of the cavity (4013), and the mechanism (4026) may move the heater (4014) toward the vicinity of the wafer supply port (4022).

[0077] Next, the jack rod (4024) may be controlled to rise and lift the processed wafer away from the surface of the chuck, and the wafer may be moved out of the heater (4014) through the wafer feed port (4022) by, for example (but not limited to), a robotic arm.

[0078] The semiconductor devices provided by the embodiments of this disclosure can not only significantly improve production capacity, but also have a multilayer cross-flow structure that can maintain gas flow in one direction, thereby improving wafer coating efficiency while ensuring film uniformity.

[0079] Furthermore, the multilayer heater structure provided by this disclosure allows for the individual heating of each wafer while heating and / or preheating using the inner wall heaters of the cavities, thereby significantly improving temperature uniformity between wafers and ensuring film uniformity.

[0080] Furthermore, since the multilayer heater structure provided by the embodiments of this disclosure can individually heat the chucks corresponding to each wafer, each wafer is exposed to the reaction gas on only one side (e.g., the top side), and is therefore particularly suitable for applications in which one side of the wafer is coated.

[0081] The terms “approximately,” “basically,” “substantially,” and “about” as used in this application are used to describe and explain small differences. When used with events or situations, the terms may refer to the exact occurrence of the event or situation, and to the approximate occurrence of the event or situation. The term “about” as used herein in relation to a given value or range usually means being within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. In this specification, a range may be expressed as from one endpoint to another, or between two endpoints. Unless otherwise specified, all ranges described herein include endpoints. The term “substantially coplanar” may refer to two surfaces within a few micrometers (μm) of the same plane, for example, within a range of 10 μm, 5 μm, 1 μm, or 0.5 μm of the same plane. When referring to substantially the same number or index, the term may mean a value that is within ±10%, ±5%, ±1%, or ±0.5% of the mean of the value.

[0082] For example, when a term is used with a value, the term may refer to a range of ±10% or less of the value, e.g., ±5%, ±4%, ±3%, ±2%, ±1%, ±0.5%, ±0.1%, or ±0.05% or less. For example, if the difference between two values ​​is less than or equal to ±10% of the mean value (e.g., ±5%, ±4%, ±3%, ±2%, ±1%, ±0.5%, ±0.1%, or ±0.05%), the two values ​​may be considered “substantially” or “almost” the same. For example, “basically” parallel may mean that the range of angle variation relative to 0 degrees is less than or equal to ±10 degrees, e.g., ±5%, ±4%, ±3%, ±2%, ±1%, ±0.5%, ±0.1%, or ±0.05%. For example, "basically" vertical may mean that the range of angular variation relative to 90 degrees is ±10 degrees or less, for example, ±5 degrees or less, ±4 degrees or less, ±3 degrees or less, ±2 degrees or less, ±1 degree or less, ±0.5 degrees or less, ±0.1 degrees or less, or ±0.05 degrees or less.

[0083] For example, if the displacement between two surfaces is 5 μm or less, 2 μm or less, 1 μm or less, or 0.5 μm or less, those two surfaces can be considered to be coplanar or substantially coplanar. If the displacement with respect to the plane between any two points on a surface is 5 μm or less, 2 μm or less, 1 μm or less, or 0.5 μm or less, the surface can be considered flat or substantially flat.

[0084] Unless otherwise stated in the context, the singular articles “a / an” and the definite article “the” used herein may include plural forms. In some embodiments described, another component placed “on top of” one component may include cases where the aforementioned component is directly on top of the later component (e.g., in physical contact with the later component) or where one or more components are interposed between the aforementioned component and the later component.

[0085] For the sake of clarity, the spatial relative terms “below,” “below,” “bottom,” “above,” “top,” “bottom,” “left side,” and “right side” used herein may be used to describe the relationship between one component or feature and another component or feature, as shown in the figures. In addition to the orientation shown in the figures, the spatial relative terms are intended to include different orientations of the device in use or operation. The device may be in a different orientation (a 90-degree rotation or other orientation), and spatially related descriptions herein may be used accordingly for explanatory purposes. When one component is said to be “connected” or “joined” to another component, one component may be directly connected or joined to the other component, or there may be an intervening component between them.

[0086] We have briefly described some embodiments and detailed features of the present disclosure. The embodiments described herein may readily be used as a basis for designing or modifying other processes and structures to achieve the same or similar objectives and / or to obtain the same or similar benefits provided to the embodiments of the present disclosure. Such equivalents may be made in various ways, substitutions, and modifications without departing from the spirit and scope of the present disclosure.

Claims

1. A gas inlet into which one or more gases are introduced, A cavity connected to the aforementioned gas inlet and having multiple bases, A gas outlet communicating with the plurality of bases within the cavity, A semiconductor device comprising a heating device having a plurality of chucks arranged in the plurality of bases of the cavity and corresponding to the plurality of bases, such that one or more of the gases described above are introduced into a gas outlet by the plurality of bases and the plurality of chucks.

2. The semiconductor device according to claim 1, wherein the heating device further comprises a heating element disposed inside each of the plurality of chucks.

3. The semiconductor device according to claim 1, wherein the heating device moves in relation to the cavity.

4. The semiconductor device according to claim 2, wherein each of the plurality of chucks is individually heated by the heating element located inside it.

5. The cavity has a main gas introduction passage that penetrates the cavity and a divided passage that communicates with the main gas introduction passage. The semiconductor device according to any one of claims 1 to 4, wherein the one or more gases flow through the main gas introduction channel and the divided flow channel via the plurality of bases and the plurality of chucks, and flow into the gas outlet.

6. The cavity has a purging channel that penetrates the cavity, The semiconductor device according to any one of claims 1 to 4, wherein the one or more gases purge the plurality of bases through the purging channel and flow into the gas outlet.

7. The semiconductor device according to any one of claims 1 to 4, wherein the cavity further comprises an inner wall heater for preheating a wafer placed in the heating device.

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