Elastic wave device and method for manufacturing the same
The elastic wave device enhances the functional surface area by structuring the device chip with a larger functional surface than mounting surface and a non-overlapping sealing region, allowing for expanded circuit pattern design and improved resonator performance.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SANAN JAPAN TECH CORP
- Filing Date
- 2024-11-11
- Publication Date
- 2026-05-21
AI Technical Summary
Conventional surface acoustic wave devices with a CSP structure have a size determined by the package substrate, limiting the functional surface area of the device chip, which restricts the design freedom of the circuit pattern, particularly for resonators.
The elastic wave device is designed with a device chip where the functional surface area is larger than the mounting surface, featuring a gap and a circumferential sealing region that does not overlap with the mounting surface, allowing for a wider area for circuit pattern formation, including resonators, and is manufactured through specific cutting and sealing processes.
This design maximizes the functional surface area of the device chip, enabling greater design freedom for circuit patterns, especially in forming resonators that extract low-frequency signals, by widening the pitch between electrode fingers.
Smart Images
Figure 2026084424000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to an improvement of a surface acoustic wave device suitable for use as a frequency filter or the like in a mobile communication device or the like.
Background Art
[0002] A surface acoustic wave device having a CSP (Chip Size Package) structure has the structure shown in FIG. 20. In the figure, reference numeral 100 denotes a device chip having at least one surface 102 serving as a functional surface made of a piezoelectric body, reference numeral 101 denotes a resonator made of a metal film formed on the surface 102 of the device chip 100, and reference numeral 103 denotes a package substrate.
[0003] The device chip 100 is mounted on the package substrate 103 via bumps 104. A gap is formed by the bumps 104 between the device chip 100 and the package substrate 103. On the mounting side of the device chip 100 on the package substrate 103, a sealing resin 105 is formed to cover the other surface and the side surface of the device chip 100 facing the surface 102, and the surface acoustic wave device has an internal space 106 between the surface 102 of the device chip 100 and the package substrate 103 by this sealing resin 105. The resonator 101 is located in this internal space 106.
[0004] Such a surface acoustic wave device has a hexahedron shape having two parallel rectangular surfaces 107 and four side surfaces 108 with respect to the surface 102. The size of the surface acoustic wave device is standardized, and many of those having the surfaces 107 with sizes of 1.6 mm × 1.2 mm, 1.8 mm × 1.4 mm, 2.0 mm × 1.6 mm, and 2.5 mm × 2.0 mm are in circulation. However, since the conventional surface acoustic wave device has the above structure, its size is determined by the package substrate 103. The device chip 100 is smaller than the package substrate 103, and the area of the surface 102 is smaller than the area of the surface 107.
Summary of the Invention
[0005] The main problem that this invention aims to solve is to provide a novel structure for this type of CSP-structured elastic wave device that can maximize the functional surface area of the device chip constituting it. [Means for solving the problem]
[0006] In order to achieve the above objectives, in this invention, from a first viewpoint, the elastic wave device is a device chip in which one surface is a functional surface on which a circuit pattern including a resonator is formed, With respect to a package substrate having one side as the mounting surface for the device chip, An elastic wave device in which a gap is formed between the functional surface and the mounting surface, When viewed from a direction perpendicular to the functional surface and the mounting surface, the area of the functional surface is larger than the area of the mounting surface, and at any position, the outer edge of the mounting surface is positioned inward from the outer edge of the functional surface, so that a circumferential sealing region that does not overlap with the mounting surface is formed on the outer edge side of the functional surface. The sealing portion is made of an insulating resin, with the base fixed to the sealing region and the inner part fixed to the side surface of the package substrate, thereby creating an internal space inside the sealing region.
[0007] One embodiment of this invention is to position wiring or functional elements other than resonators that form part of the circuit pattern within the sealing region.
[0008] Furthermore, one embodiment of this invention is to make the outer portion of the sealing portion flush with the side surface of the device chip.
[0009] Furthermore, in order to achieve the above objectives, in this invention, from a second viewpoint, the method for manufacturing an elastic wave device is, the method for manufacturing an elastic wave device, A first step of forming the circuit pattern in each unit region that constitutes one of the device chips on the wafer, A second step is to mount the package substrate for each unit region on the wafer, A third step is to form the sealing portion in the margin region formed between adjacent package substrates on the wafer, after the second step, The method includes, after the third step, a fourth step of cutting and fragmenting the wafer in the margin region to generate elastic wave devices for a number of units of the unit region.
[0010] In the fourth step, the wafer is cut together with the sealing portion, which is one embodiment of this invention.
[0011] Furthermore, in the third step, the sealing portions are formed on both sides of the midpoint of the width direction of the margin region using an inkjet printer, In the fourth step, the wafer is cut at a position in the middle of the width direction of the margin region, which is one embodiment of the present invention. [Effects of the Invention]
[0012] According to this invention, the size of the elastic wave device is determined by the device chip that constitutes it, and the area of the functional surface of the device chip can be made equal to the size of the elastic wave device to maximize the area of the functional surface. This allows for a wider area for forming the circuit pattern, including the resonator, on the device chip compared to conventional elastic wave devices with the same size. Specifically, it maximizes the design freedom of the circuit pattern under standardized size, making it easier to design, for example, a resonator in the circuit pattern that extracts low-frequency signals by widening the pitch between the electrode fingers of the IDT electrode. [Brief explanation of the drawing]
[0013] [Figure 1] Figure 1 is a cross-sectional configuration diagram of an elastic wave device (first example) according to an embodiment of the present invention. [Figure 2] Figure 2 is a plan configuration diagram as viewed from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a cross-sectional configuration diagram at the position of line B-B in Figure 1. [Figure 4] Figure 4 is a configuration diagram showing an example of a circuit formed on the functional surface of the device chip of the first example. [Figure 5] Figure 5 is a configuration diagram showing an example of a resonator formed on the functional surface. [Figure 6] Figure 6 is a cross-sectional configuration diagram showing one step in the manufacturing process of the first example. [Figure 7] Figure 7 is a perspective configuration diagram showing one step in the manufacturing process of the first example. [Figure 8] Figure 8 is a cross-sectional configuration diagram showing one step in the manufacturing process of the first example implemented after the step of Figure 7. [Figure 9] Figure 9 is a cross-sectional configuration diagram showing one step in the manufacturing process of the first example implemented after the step of Figure 8. [Figure 10] Figure 10 is a cross-sectional configuration diagram showing the main part of a partially modified example of the first example. [Figure 11] Figure 11 is a cross-sectional configuration diagram of an elastic wave device (second example) according to an embodiment of the present invention. [Figure 12] Figure 12 is a cross-sectional configuration diagram showing one step in the manufacturing process of the second example. [Figure 13] Figure 13 is a cross-sectional configuration diagram showing one step in the manufacturing process of the second example implemented after the step of Figure 12. [Figure 14] Figure 14 is a cross-sectional configuration diagram showing one step in the manufacturing process of the second example implemented after the step of Figure 13. [Figure 15] Figure 15 is a cross-sectional configuration diagram of an elastic wave device (third example) according to an embodiment of the present invention. [Figure 16] FIG. 16 is a cross-sectional configuration diagram showing one step during the manufacturing process of the third example. [Figure 17] FIG. 17 is a cross-sectional configuration diagram showing one step during the manufacturing process of the second example implemented after the step of FIG. 16. [Figure 18] FIG. 18 is a cross-sectional configuration diagram showing one step during the manufacturing process of the second example implemented after the step of FIG. 17. [Figure 19] FIG. 19 is a cross-sectional configuration diagram showing one step during the manufacturing process of the second example implemented after the step of FIG. 18. [Figure 20] FIG. 20 is a cross-sectional configuration diagram of a conventional elastic wave device.
MODE FOR CARRYING OUT THE INVENTION
[0014] Hereinafter, based on FIGS. 1 to 19, typical embodiments of this invention will be described. The elastic wave device 1 according to this embodiment is suitable for use as a frequency filter or the like in mobile communication devices and the like.
[0015] Such an elastic wave device 1 includes a device chip 2, a package substrate 3, and a sealing portion 4.
[0016] The device chip 2 has a function of propagating elastic waves. One surface (the surface composed of a piezoelectric body) of the device chip 2 having the function of propagating elastic waves becomes the functional surface 2a of the device chip 2. Typically, lithium tantalate or lithium niobate is used as the piezoelectric body for the device chip 2, and the device chip 2 may be configured by laminating sapphire, silicon, alumina, spinel, quartz or glass or the like on the piezoelectric body as a support.
[0017] Typically, the device chip 2 is configured to be a rectangular plate with sides ranging from 0.8 to 2.3 mm and a thickness of 0.18 to 0.2 mm, and has a functional surface 2a, a back surface 2d facing the functional surface 2a, and a side surface 2e extending between the two. Therefore, when viewed from a direction perpendicular to the functional surface 2a, the contour of the functional surface 2a of the device chip 2 is rectangular.
[0018] As shown in Figures 1 to 3, a desired conductive circuit pattern 5 is deposited on the functional surface 2a of the device chip 2. This circuit pattern 5 includes a resonator 6, pads 7, wiring connecting the resonators 6 (not shown), and wiring connecting the resonators 6 and pads 7 (not shown). Typically, this circuit pattern 5 is formed on the functional surface 2a by a conductive metal film formed on the wafer 14 that will become the device chip 2 using photolithography and etching techniques.
[0019] Figure 4 shows a conceptual example of a circuit provided on a single device chip 2 by the circuit pattern 5. Reference numeral 60 indicates a resonator 6 connected in series between input / output ports, reference numeral 61 indicates a resonator 6 connected in parallel between input / output ports, and reference numeral 8 indicates ground. The number and arrangement of resonators 6 can be changed as needed. In the example shown in Figure 4, a ladder filter is configured.
[0020] Figure 5 shows an example of a resonator 6 as a functional element included in the circuit pattern 5. The resonator 6 has an IDT electrode 6a and a reflector 6b formed so as to sandwich the IDT electrode 6a. The IDT electrode 6a consists of electrode pairs, and each electrode pair is formed by connecting multiple electrode fingers 6c, which are arranged in parallel so that their length intersects the propagation direction p of the elastic wave, with a busbar 6d at one end of each pair. The reflector 6b is formed by connecting the ends of multiple electrode fingers 6e, which are arranged in parallel so that their length intersects the propagation direction p of the elastic wave, with a busbar 6f.
[0021] The package substrate 3 has one side designated as the mounting surface 3a for the device chip 2. The package substrate 3 is integrated with the device chip 2 such that a gap 9 is formed between the functional surface 2a and the mounting surface 3a. In the illustrated example, as shown in Figure 1, the circuit of the device chip 2 is connected to the circuit of the package substrate 3 by fixing a bump 10 made of a conductive material such as solder, which is fixed to a pad 7 in the circuit pattern 5 formed on the functional surface 2a of the device chip 2, to a pad 3f formed on the mounting surface 3a of the package substrate 3. A gap 9 is formed between the functional surface 2a of the device chip 2 and the mounting surface 3a of the package substrate 3, including the thickness of the pads 7, 3f and the bumps 10. In the illustrated example, an external connection pad 3e is formed on the back surface 3c of the package substrate 3, opposite the mounting surface 3a, and is connected to the pad 7 by internal wiring 3d. The elastic wave device 1 is mounted on a module substrate or main board (not shown) using this external connection pad 3e.
[0022] The package substrate 3 is made of an organic material such as synthetic resin or an inorganic material such as ceramic, and is configured to be a rectangular plate with sides ranging from 0.7 to 2.2 mm and a thickness of 0.18 to 0.2 mm. Therefore, when viewed from a direction perpendicular to the mounting surface 3a, the package substrate 3 has a rectangular shape as the outline of the mounting surface 3a.
[0023] As shown in Figure 2, when the elastic wave device 1 according to this embodiment is viewed (seen through) from a direction perpendicular to the functional surface 2a and the mounting surface 3a (the direction indicated by arrow A in Figure 1), the area of the functional surface 2a is larger than the area of the mounting surface 3a. In addition, when viewing the elastic wave device 1 according to this embodiment from a direction perpendicular to the functional surface 2a and the mounting surface 3a, the outer edge 3b constituting the contour of the mounting surface 3a is positioned inward from the outer edge 2b constituting the contour of the functional surface 2a at any position. In other words, in a direction r that circles the center c of the functional surface 2a and the mounting surface 3a (the point where the two diagonals d1 and d2 of the functional surface 2a intersect / see Figure 2), the outer edge 3b of the mounting surface 3a is positioned inward (towards the center c) of the outer edge 2b of the functional surface 2a at any given position. In this manner, when the elastic wave device 1 according to this embodiment is viewed from a direction perpendicular to the functional surface 2a and the mounting surface 3a, a circumferential sealing region 2c is formed on the outer edge 2b side of the functional surface 2a that does not overlap with the mounting surface 3a.
[0024] The sealing portion 4 is made of an insulating resin. The sealing portion 4 has a base portion 4a fixed to the sealing region 2c, and an inner portion 4b located on the center c side of the functional surface 2a and the mounting surface 3a is fixed to the side surface 3f of the package substrate 3. The thickness of the sealing portion 4 is the distance between the outer portion 4d facing the inner portion 4b and the inner portion 4b, and the height of the sealing portion is the distance between the base portion 4a and the end portion 4c facing it. The sealing portion 4 is formed over the entire circumferential sealing region 2c. That is, the sealing portion 4 has at least a portion formed to circumfer the center c of the functional surface 2a and the mounting surface 3a. The sealing portion 4 formed in this way creates an internal space 11 (cavity) inside the sealing region 2c of the elastic wave device 1 that is separated from the outside. The resonator 6 in the circuit pattern 5 is located within the internal space 11, which is composed of the sealing portion 4, the functional surface 2a, and the mounting surface 3a.
[0025] According to this embodiment of the elastic wave device 1, the size of the elastic wave device 1 is determined by the device chip 2 that constitutes it. Therefore, according to this embodiment of the elastic wave device 1, the area of the functional surface 2a of the device chip 2 can be made equal to the size of the elastic wave device 1, thereby maximizing the area of the functional surface 2a. This allows for a wider area for forming the circuit pattern 5, including the resonator 6, on the device chip 2 compared to conventional elastic wave devices 1 with the same size. Specifically, it allows for the greatest possible freedom in designing the circuit pattern 5 under standardized size conditions, making it easier to design, for example, a resonator 6 in the circuit pattern 5 that extracts low-frequency signals by widening the pitch between the electrode fingers 6c of the IDT electrode.
[0026] Figures 1 through 5 show a first example of the elastic wave device 1, Figure 11 shows a second example of the elastic wave device 1, and Figure 15 shows a third example of the elastic wave device 1. Each example differs only in the configuration of the sealing portion 4; the structure other than the sealing portion 4 is substantially the same. In each figure, the thickness of the components is exaggerated to make the structure of the elastic wave device 1 easier to understand.
[0027] (Example 1) In the first example, the sealing portion 4 has an end portion 4c facing the base portion 4a positioned slightly below the mounting surface 3a in Figure 1. Between the end portion 4c of the sealing portion 4 and the back surface 3c of the package substrate 3, the side surface 3f of the package substrate 3 is not covered by the sealing portion 4. In the first example, the outer portion 4d of the sealing portion 4 is flush with the side surface 2e of the device chip 2. In the first example, a portion of the inner part 4b of the sealing portion 4 slightly extends into the gap 9. In the illustrated example, the sealing portion 4 is formed by stacking three layers of the resin, with the first and second layers extending into the gap 9. Furthermore, the sealing portion 4 is not limited to three layers of resin; the number of layers of resin can be set as needed, such as sealing with a single layer.
[0028] As shown in Figure 10, the wiring 12 that forms part of the circuit pattern 5 may be positioned in the sealing region 2c. Alternatively, although not shown in the figure, functional elements other than the resonator 6, such as capacitances, may be positioned. By doing so, it is possible to effectively expand the area in which the resonator 6 can be formed on the functional surface 2a. In this case, the base 4a of the sealing portion 4 will be fixed to the sealing region 2c on the wiring 12. More specifically, in the example of Figure 10, the circuit pattern 5 is covered with an insulating film 13 made of silicon oxide or the like, and the base 4a of the sealing portion 4 is fixed to the sealing region 2c with this insulating film 13 interposed.
[0029] The elastic wave device 1 according to the first example can be manufactured appropriately and rationally by the following manufacturing process. First, for each unit region of the wafer 14 that will become one of the device chips 2, the circuit pattern 5 is formed on the surface of the wafer 14 that will become the functional surface 2a (Figure 6 / First step).
[0030] Next, the package substrate 3 is mounted on each unit region of the wafer 14 (Figure 7 / Second Step). The package substrate 3 is prepared such that the area of its mounting surface 3a is smaller than the area of the unit region, and is flip-chip mounted on the wafer 14. Specifically, bumps 10 are formed on the pads 7 of the circuit pattern 5 formed in the unit region, and then these bumps 10 are fixed to the corresponding pads 3f formed on the mounting surface 3a of the package substrate 3. In the second step, the package substrate 3, which is mounted in this manner, is used to form a grid-like margin region 15 on the wafer 14. The width of the margin region 15 between adjacent package substrates 3 is set to be twice the width 15a of the sealing region 2c in both the x and y directions in Figure 7, plus the dimension 15b lost due to cutting, which will be described later.
[0031] Next, the sealing portion 4 is formed in the margin region 15 formed between adjacent package substrates 3 on the wafer 14 (Figure 8 / Third step). In the illustrated example, the sealing portion 4 is formed over the entire width of the margin region 15. In the illustrated example, the sealing portion 4 is constructed by using a dispenser to fill the margin region 15 with the resin constituting the sealing portion 4 in three separate steps.
[0032] Next, in the margin region 15, the wafer 14 is cut and fragmented to generate elastic wave devices 1 equal to the number of unit regions (Figure 9 / Fourth step). In this fourth step, the wafer 14 is typically cut together with the sealing portion 4 using a dicing saw 16. This generates the first example of elastic wave device 1. In Figure 9 (and similarly in Figures 14 and 19), reference numeral 18 indicates a dancing tape that is attached to the back surface of the wafer during dicing. In this embodiment, the dicing saw 16 cuts the wafer 14 from the surface side which becomes the functional surface 2a. Since the hard wafer 14 is easy to cut accurately, deviations in the cutting position can be suppressed, making it possible to cut and pulverize with high processing accuracy.
[0033] (Example 2) In the second example shown in Figure 11, the outer portion 4d of the sealing portion 4 is located slightly inward from the side surface 2e of the device chip 2, that is, on the side c of the functional surface 2a and the mounting surface 3a, and is not flush with the side surface 2e of the device chip 2. The remaining structure of the second example is identical or substantially identical to that of the first example, so its explanation will be omitted.
[0034] The elastic wave device 1 according to the second example can be manufactured appropriately and rationally by the following manufacturing process. First, the circuit pattern 5 is formed in each unit region that will become one of the device chips 2 on the wafer 14 (Figure 12 / First step).
[0035] Next, the package substrate 3 is mounted on each unit region of the wafer 14 (second step). The details of the second step are the same as those of the second step in the first example, so the explanation is omitted.
[0036] Next, the sealing portions 4 are formed on both sides of the middle of the widthwise position of the margin region 15 using an inkjet printer (Figure 13 / Third step). In the illustrated example, the position 15c in the middle of the width direction of the margin region 15 is not covered by the resin constituting the sealing portion 4, and the sealing portions 4 are formed on both sides of this position 15c in the width direction, extending over the entire area of the margin region 15. In the illustrated example, the sealing portion 4 is formed by filling the margin region 15 with the resin constituting the sealing portion 4 in three separate steps using an inkjet printer, thereby creating a three-layered resin structure for the sealing portion 4. Furthermore, the sealing portion 4 is not limited to three layers of resin; the number of layers of resin can be set as needed, such as sealing with a single layer.
[0037] Next, at a position 15c in the middle of the width direction of the margin region 15 that is not covered with the resin, the wafer 14 is cut and fragmented to generate elastic wave devices 1 equal to the number of unit regions (Figure 14 / Fourth Step). This generates the second example of elastic wave device 1.
[0038] (Example 3) In the third example shown in Figure 15, the outer portion 4d of the sealing portion 4 is flush with the side surface 2e of the device chip 2. The inner portion 4b of the sealing portion 4 covers the entire side surface 2e of the device chip 2. The end portion 4c of the sealing portion 4 is located slightly below the back surface 3c of the package substrate 3 in Figure 15, and the sealing portion 4 further includes a back surface covering portion 4e that covers the area of the back surface 3c of the package substrate 3 excluding the area where the external connection pads 3e are formed. The end portion 4c of the sealing portion 4 and the back surface covering portion 4e are integral and continuous. The remaining structure of the third example is the same or substantially the same as that of the first example, so its explanation will be omitted.
[0039] The elastic wave device 1 according to the third example can be manufactured appropriately and rationally by the following manufacturing process. First, the circuit pattern 5 is formed in each unit region that will become one of the device chips 2 on the wafer 14 (Figure 16 / First Step).
[0040] Next, the package substrate 3 is mounted on each unit region of the wafer 14 (second step). The details of the second step are the same as those of the second step in the first example, so the explanation is omitted.
[0041] Next, the mounting side of the package substrate 3 on the wafer 14 is covered with a resin 17 that forms the sealing portion 4. Specifically, the mounting side of the package substrate 3 is covered with the resin 17 that forms the sealing portion 4 such that the resin 17 fills the margin region 15 and covers the back surface 3c of the package substrate 3. This covering is typically formed by layering a film made of the resin onto the wafer 14 and heating, melting, and curing it, or by applying the resin and then heating and curing it (Figure 17 / Third Step). Subsequently, a portion of the resin is removed from the back surface 3c of the package substrate 3 by known methods such as dry etching, wet etching, and mechanical polishing, exposing the external connection pads 3e (Figure 18).
[0042] Next, at a position in the middle of the width direction of the margin region 15, the wafer 14 is cut and fragmented to generate elastic wave devices 1 equal to the number of unit regions (Figure 19 / Fourth step). In this fourth step, the wafer 14 is typically cut together with the sealing portion 4 using a dicing saw 16. This generates the third example of elastic wave device 1.
[0043] Naturally, the present invention is not limited to the embodiments described above, but includes all embodiments that can achieve the objectives of the present invention. [Explanation of Symbols]
[0044] 1. Elastic wave device 2 device chips 2a Functional aspect 2b Outer edge 2c Sealing area 2d back 2e side 3. Package substrate 3a Implementation side 3b outer edge 3c back 3d internal wiring 3e External Connection Pad 3f pad 3g side 4. Sealing part 4a base 4b Inner part 4c end 4d outer part 4e Back cover part 5 Circuit Patterns 6, 60, 61 resonators 6a IDT electrode 6b reflector 6c electrode finger 6d busbar 6e electrode finger 6th floor bus bar 7 pads 8 Grand 9 intervals 10 Bump 11 Interior space 12 Wiring 13 Insulating Film 14 wafers 15. Margin Area Dimensions 15a, 15b 15c Position in the middle of the width 16 Dicing Saw 17 Resin 18 Dicing Tapes
Claims
1. A device chip having one surface as a functional surface with a circuit pattern including a resonator, With respect to a package substrate having one side as the mounting surface for the device chip, An elastic wave device in which a gap is formed between the functional surface and the mounting surface, When viewed from a direction perpendicular to the functional surface and the mounting surface, the area of the functional surface is larger than the area of the mounting surface, and at any position, the outer edge of the mounting surface is positioned inward from the outer edge of the functional surface, so that a circumferential sealing region that does not overlap with the mounting surface is formed on the outer edge side of the functional surface. An elastic wave device comprising a sealing portion made of an insulating resin, the base of which is fixed to the sealing region and the inner part of which is fixed to the side surface of the package substrate, thereby creating an internal space inside the sealing region.
2. The elastic wave device according to claim 1, wherein a wiring or functional element other than a resonator that forms part of the circuit pattern is positioned in the sealing region.
3. The elastic wave device according to claim 1, wherein the outer portion of the sealing portion is flush with the side surface of the device chip.
4. A method for manufacturing an elastic wave device according to any one of claims 1 to 3, A first step of forming the circuit pattern in each unit region that constitutes one of the device chips on the wafer, A second step is to mount the package substrate for each unit region on the wafer, A third step is to form the sealing portion in the margin region formed between adjacent package substrates on the wafer, after the second step, A method for manufacturing an elastic wave device, comprising: a fourth step after the third step, cutting and fragmenting the wafer in the margin region to generate elastic wave devices for a number of units of the unit region.
5. The method for manufacturing an elastic wave device according to claim 4, wherein in the fourth step, the wafer is cut together with the sealing portion.
6. In the third step, the sealing portions are formed on both sides of the margin region, which is located midway in the width direction, using an inkjet printer. The method for manufacturing an elastic wave device according to claim 4, wherein in the fourth step, the wafer is cut at a position in the middle of the width direction of the margin region.