Substrate holder, film deposition apparatus, and temperature control method

Abstract

To suppress temperature variations on the substrate while improving adhesion between the substrate and the metal mask. [Solution] The substrate holder comprises a main body having residual magnetization and generating a temperature gradient when current is supplied, and a main surface provided on one side of the temperature gradient in the main body, which attracts the metal mask on the substrate with the magnetic force of the residual magnetization.

Description

[Technical Field]

[0001] The present invention relates to a substrate holder, a film deposition apparatus, and a temperature control method. [Background technology]

[0002] One method for forming a film on a substrate involves using a metal plate with openings as a mask while depositing the film onto the substrate using a vapor deposition method. This metal plate is called a metal mask, and by depositing the film while the metal mask is in close contact with the substrate, it is possible to deposit a film patterned with the shape of the openings.

[0003] One method for adhering a metal mask to a substrate is to place a magnet on the back of a substrate holder and use the magnetic force of the magnet to attract the metal mask on the surface of the substrate holder (Patent Document 1). The substrate holder has a cooling pipe through which a refrigerant flows, and by performing film deposition while cooling the substrate with the refrigerant, it is possible to prevent the film from being altered by heating. In addition, substrate holders that cool the substrate with a Peltier element instead of a refrigerant have also been proposed (Patent Documents 2 and 3).

[0004] However, in a structure that uses cooling tubes or Peltier elements for cooling, areas of the substrate holder where there are no cooling tubes or Peltier elements cannot be cooled, which may cause temperature unevenness on the substrate. Moreover, because the substrate and magnet are separated by the thickness of the cooling tubes or Peltier elements, the magnetic force acting from the magnet on the metal mask is weakened, making it difficult to make the metal mask adhere tightly to the substrate. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2021-102811 [Patent Document 2] Japanese Patent Publication No. 2024-85121 [Patent Document 3] Japanese Patent Publication No. 2024-85122 [Overview of the project] [Problems that the invention aims to solve]

[0006] In one aspect, the present invention aims to improve the adhesion between the substrate and the metal mask while suppressing temperature unevenness in the substrate. [Means for solving the problem]

[0007] According to one aspect of the present invention, the substrate holder has a main body having residual magnetization and generating a temperature gradient when current is supplied, and a main surface provided on one side of the temperature gradient in the main body, which attracts a metal mask on the substrate with the magnetic force of the residual magnetization.

[0008] The above-described substrate holder may further include a plate having a surface on which the substrate is placed and a back surface that is in close contact with the main surface.

[0009] In the above-described substrate holder, a recess into which the substrate fits may be provided on the surface.

[0010] In the above-described substrate holder, the material of the plate may be metal or an insulator.

[0011] The substrate holder described above may further include a first electrode electrically connected to the main body and a second electrode electrically connected to the main body through which the current flows.

[0012] In the substrate holder described above, the direction of the current may be parallel to the main surface.

[0013] In the substrate holder described above, the direction of the temperature gradient may be perpendicular to the main surface.

[0014] In the substrate holder described above, the main body may contain a material that exhibits any of the following effects: normal etchshausen effect, abnormal etchshausen effect, spin Peltier effect, and off-diagonal Peltier effect.

[0015] In the above substrate holder, the material may be exposed on the main surface.

[0016] In the above substrate holder, the main body is a laminate in which a first material plate, an insulating layer, and a second material plate are alternately laminated along a direction parallel to the main surface, and on the main surface, each of the first material plate, the insulating layer, and the second material plate may be exposed.

[0017] In the above substrate holder, the main body has a first side surface on which each of the first material plate, the insulating layer, and the second material plate is exposed, and a second side surface on which each of the first material plate, the insulating layer, and the second material plate is exposed and which is opposite to the first side surface, and a first connection terminal for electrically connecting the adjacent first material plate and second material plate on the first side surface, and a second connection terminal for electrically connecting the adjacent first material plate and second material plate on the second side surface may be further provided.

[0018] In the above substrate holder, at least one of the first material plate and the second material plate has the residual magnetization, and the temperature gradient may be generated by the supply of the current.

[0019] In the above substrate holder, at least one of the first material plate and the second material plate may have magnetic layers and thermoelectric material layers alternately laminated in a direction inclined with respect to the main surface.

[0020] In the above substrate holder, the temperature gradient has a low temperature side and a high temperature side, and one side may be the low temperature side.

[0021] According to another aspect of the present invention, a film forming apparatus includes a chamber whose interior is depressurized, and a substrate holder provided in the chamber for holding a substrate, and the substrate holder has a main body having residual magnetization and generating a temperature gradient by the supply of a current, and a main surface provided on the low temperature side of the temperature gradient in the main body and attracting a metal mask on the substrate by the magnetic force of the residual magnetization.

[0022] According to another aspect of the present invention, the temperature control method includes supplying an electric current to a body having residual magnetization to generate a temperature gradient in the body, measuring at least one temperature of a main surface provided on one side of the temperature gradient in the body, a substrate on the main surface, and a metal mask on the substrate attracted to the main surface by the magnetic force of the residual magnetization, and controlling the electric current so that the measured temperature approaches a target temperature.

Advantages of the Invention

[0023] According to the present invention, it is possible to improve the adhesion between the substrate and the metal mask while suppressing the temperature unevenness of the substrate.

Brief Description of the Drawings

[0024] [Figure 1] FIG. 1(a) is a top view of a substrate holder according to the first embodiment, and FIG. 1(b) is a cross-sectional view taken along line I-I of FIG. 1(a). [Figure 2] FIGS. 2(a) to (c) are perspective views (part 1) for explaining the material of the body according to the first embodiment. [Figure 3] FIGS. 3(a) and (b) are perspective views (part 2) for explaining the material of the body according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view of a film forming apparatus according to the first embodiment. [Figure 5] FIGS. 5(a) and (b). are cross-sectional views (part 1) for explaining the film forming method according to the first embodiment. [Figure 6] FIGS. 6(a) and (b) are cross-sectional views (part 2) for explaining the film forming method according to the first embodiment. [Figure 7] FIG. 7 is a top view for explaining the film forming method according to the first embodiment. [Figure 8] FIG. 8 is a flowchart showing an example of control performed by the control unit according to the first embodiment. [Figure 9]Figure 9 is a cross-sectional view (part 1) illustrating the film deposition method according to the second embodiment. [Figure 10] Figure 10 is a cross-sectional view (part 2) illustrating the film deposition method according to the second embodiment. [Figure 11] Figure 11 is a cross-sectional view (part 1) illustrating the film deposition method according to the third embodiment. [Figure 12] Figure 12 is a cross-sectional view (part 2) illustrating the film deposition method according to the third embodiment. [Figure 13] Figure 13 is a top view of the plate according to the third embodiment. [Figure 14] Figure 14 is a perspective view of the substrate holder according to the third embodiment. [Figure 15] Figure 15(a) is a top view of the substrate holder according to the third embodiment, and Figure 15(b) is a cross-sectional view along the line III-III in Figure 15(a). [Figure 16] Figure 16(a) is a top view of the substrate holder according to the fourth embodiment with the substrate and metal mask placed on it, and Figure 16(b) is a cross-sectional view along the line IV-IV in Figure 16(a). [Figure 17] Figure 17 is a perspective view of the substrate holder according to the fifth embodiment. [Figure 18] Figure 18 is an exploded perspective view of the main body of the substrate holder according to the fifth embodiment. [Figure 19] Figure 19(a) is a top view of the substrate holder according to the fifth embodiment, and Figure 19(b) is a cross-sectional view along the VV line in Figure 19(a). [Figure 20] Figure 20(a) is a top view of the substrate holder according to the fifth embodiment with the substrate and metal mask placed on it, and Figure 20(b) is a cross-sectional view along the line VI-VI in Figure 20(a). [Figure 21] Figure 21 is a top view of the substrate holder used in the embodiment. [Figure 22] Figure 22 shows an image obtained with a thermographic camera in the example. [Figure 23]Figure 23 is a graph obtained by measuring the temperature in each temperature measurement region at various currents using a thermographic camera in the embodiment. [Modes for carrying out the invention]

[0025] The embodiments will be described below with reference to the drawings. Similar elements will be denoted by the same reference numerals, and their descriptions will be omitted.

[0026] (First Embodiment) Figure 1(a) is a top view of a substrate holder according to the first embodiment. This substrate holder 1 is a susceptor that adsorbs a substrate when depositing, for example, an organic film, and comprises a main body 2, a first electrode 3, and a second electrode 4.

[0027] The main body 2 is the part of the substrate holder 1 that cools the substrate. The shape of the main body 2 is not particularly limited, but in this example, the main body 2 is rectangular when viewed from above. However, the main body 2 may also be a polygon or a circle when viewed from above.

[0028] Each electrode 2 and 3 has the function of supplying current to the main body 2, and in this example, they are arranged so as to face each other through the main body 2 when viewed from above.

[0029] Figure 1(b) is a cross-sectional view taken along line II in Figure 1(a). As shown in Figure 1(b), the main body 2 is plate-shaped and has opposing first main surface 2a and second main surface 2b. The first main surface 2a functions as a cooling surface for cooling the substrate. The second main surface 2b functions as a heat dissipation surface for dissipating heat absorbed from the substrate. The thickness of the main body 2 is not particularly limited and can be, for example, 1.0 mm or more and 20.0 mm or less.

[0030] Furthermore, the main body 2 comprises opposing first side surfaces 2c and second side surfaces 2d, to which electrodes 3 and 4 are fixed. In this example, electrodes 3 and 4 are formed on the entire surface of each side surface 2c and 2d to ensure that the current density flowing between electrodes 3 and 4 is uniform in the main body 2. The material of electrodes 3 and 4 is not particularly limited, and electrodes 3 and 4 can be formed from any metal.

[0031] In this embodiment, the material used for the main body 2 is a material that generates a temperature gradient when an electric current is passed between the electrodes 3 and 4 and that has residual magnetization. Such a material is not particularly limited, but for example, the materials described below can be used.

[0032] Figures 2(a) to (c), and Figures 3(a) and (b) are perspective views illustrating the material of the main body 2.

[0033] Figure 2(a) is a perspective view of the case where a material exhibiting a normal Etchingshausen effect is used as the overall material for the main body 2.

[0034] In this case, a current I is supplied from the second electrode 3 to the first electrode 4. Then, a magnetic field B parallel to the main surfaces 2a and 2b and perpendicular to the current I is applied to the main body 2. This creates a temperature gradient G perpendicular to the main surfaces 2a and 2b, such that the first main surface 2a is on the lower temperature side and the second main surface 2b is on the higher temperature side. Note that the direction of the remanent magnetization of the main body 2 is not particularly limited and may be any direction.

[0035] Examples of materials that exhibit a normal Etschhausen effect and can be used as the material for the main body 2 include Bi-Sb alloy, Cd3As2, InSb, Ge, NbP, and Pb. 1-x Sn x Examples include Se and ZrTe5.

[0036] Figure 2(b) is a perspective view of the case where a material exhibiting an abnormal Etchingshausen effect is used as the overall material for the main body 2.

[0037] In this case as well, current I is supplied to the main body 2, similar to Figure 2(a). Furthermore, the direction of the remanent magnetization M of the main body 2 is parallel to the main surfaces 2a and 2b, and perpendicular to the current I. As a result, a temperature gradient G similar to that in Figure 2(a) is generated in the main body 2.

[0038] Examples of materials exhibiting an abnormal etchshausen effect that can be used as the material for the main body 2 include Co-based Heusler alloys, Sm-Co alloys, Nd-Fe-B alloys, Fe-Ga alloys, Fe-Al alloys, FePt, Fe4N, Mn3Sn, and MnGa.

[0039] Figure 2(c) is a perspective view of the case where a material exhibiting the spin Peltier effect is used as the overall material for the main body 2.

[0040] In this case as well, current I is supplied to the main body 2, similar to Figure 2(a). Furthermore, the direction of the spin current S generated by the remanent magnetization of the main body 2 is set to proceed from the second main surface 2b toward the first main surface 2a. This generates a temperature gradient G similar to that in Figure 1.

[0041] Materials exhibiting the spin Peltier effect that can be used as the material for main body 2 only need to have a heterointerface between a conductor that serves as a spin current injection source and a magnetic material. For example, the conductor material can be Pt, W, Ta, or Ni, and the magnetic material can be Y3Fe5O 12 Examples include Ni-Fe alloys.

[0042] Figure 3(a) is a perspective view of the case where a goniopolar material exhibiting an off-diagonal Peltier effect is used as the overall material for the main body 2.

[0043] In this case as well, a current I is supplied to the main body 2, similar to Figure 2(a). This generates a temperature gradient G similar to that in Figure 1. Note that the direction of the residual magnetization of the main body 2 is not particularly limited and can be any direction.

[0044] Examples of goniopora materials that can be used as the material for the main body 2 include Re4Si7, Mg3Sb2 alloys, and La2PtB.

[0045] Figure 3(b) is a perspective view when an artificial gradient multilayer film exhibiting an off-diagonal Peltier effect is used as the main body 2.

[0046] In this case as well, current I is supplied to the main body 2, similar to Figure 2(a). Furthermore, the main body 2 is a laminate in which magnetic layers and thermoelectric material layers are alternately stacked in a direction inclined with respect to each main surface 2a and 2b. As a result, the magnetic layers and thermoelectric material layers are exposed in a striped pattern on each main surface 2a and 2b, with the direction of the stripes being perpendicular to the current I. Also, the direction of the remanent magnetization M of the magnetic layer is aligned with the stacking direction of the laminate. This generates a temperature gradient G similar to that in Figure 1.

[0047] Examples of materials for the magnetic layer of artificial gradient multilayer films include SmCo5 and Nd2Fe. 14 Examples include B. Also, as a material for the thermoelectric material layer of an artificial gradient multilayer film, for example, p-type BST(Bi 0.3 S 1.7 Examples include Te3, PbTe-based semiconductors, and GeTe-based semiconductors.

[0048] In any of the cases shown in Figures 2(a) to (c) and Figures 3(a) and (b), a material exhibiting one of the following effects will appear on the main surface 2a of the main body 2: a normal Etschhausen effect, an abnormal Etschhausen effect, a spin Peltier effect, or an off-diagonal Peltier effect. As a result, the substrate (not shown) can be efficiently cooled on the main surface 2a, which is on the lower temperature side of the temperature gradient G, and the metal mask (not shown) on the substrate can be efficiently attracted to the main surface 2a by the magnetic force of the residual magnetization M.

[0049] Next, a film deposition apparatus equipped with a substrate holder 1 will be described.

[0050] Figure 4 is a cross-sectional view of the film deposition apparatus according to this embodiment. The film deposition apparatus 10 is a deposition apparatus for depositing an organic film onto a substrate, for example, and comprises a substrate holder 1, a chamber 11, a control unit 100, and a temperature sensor 101.

[0051] Chamber 11 is a container whose interior can be depressurized, and is supplied with vapor of organic material generated by a deposition source (not shown).

[0052] The substrate holder 1 comprises a main body 2 as shown in Figures 2(a) to (c) and Figures 3(a) and (b), and a substrate (not shown) is placed on the first main surface 2a of the main body 2.

[0053] The control unit 100 is a computer that controls the current I supplied to the main unit 2 based on the temperature measurement signal from the temperature sensor 101, so that the temperature of a predetermined part in the chamber 11 approaches the target temperature.

[0054] The temperature sensor 101 measures the temperature of a predetermined part inside the chamber 11 and outputs a temperature measurement signal indicating that temperature to the control unit 100.

[0055] Next, we will explain the film deposition method using this film deposition apparatus 10.

[0056] Figures 5(a) and 5(b) and Figures 6(a) and 6(b) are cross-sectional views illustrating the film deposition method according to this embodiment, and Figure 7 is a top view thereof. While the type of film to be deposited is not particularly limited, the following explanation will use the case of depositing an organic film for an organic EL (Electro-Luminescence) device as an example.

[0057] First, the process shown in Figure 5(a) will be explained. First, using a transport robot (not shown), the substrate 8 and the metal mask 7 are placed on the first main surface 2a of the main body 2 in that order.

[0058] The material of the substrate 8 is not particularly limited. For example, when manufacturing an organic EL device, a glass substrate is used as the substrate 8. Examples of organic EL devices include organic EL televisions, organic EL displays, and lighting.

[0059] Furthermore, the metal mask 7 is a magnetic metallic mask and has an opening 7a that overlaps the substrate 8. The material of the metal mask 7 may be, for example, stainless steel.

[0060] The metal mask 7 is attracted to the first main surface 2a by the magnetic force F of the residual magnetization of the main body 2, thereby allowing the metal mask 7 to be brought into close contact with the substrate 8.

[0061] To prevent misalignment between the main body 2 and the substrate 8, a recess identical in shape to the substrate 8 may be provided in the main body 2, and the substrate 8 may be fitted into this recess. Alternatively, embedded electrodes may be provided in the main body 2, and the electrostatic force acting between these embedded electrodes and the substrate 8 may prevent misalignment between the main body 2 and the substrate 8. Furthermore, via holes may be formed in the main body 2, and the substrate 8 may be attracted through these via holes. In addition, the substrate 8 may be fixed to the main body 2 with a member such as a leaf spring.

[0062] Figure 7 is a top view of this process, and Figure 5(a) corresponds to a cross-sectional view along line II-II in Figure 7.

[0063] As shown in Figure 7, in this example, the metal mask 7 is rectangular in shape when viewed from above, and a rectangular opening 7a is formed in its center. However, the shape of the metal mask 7 and its opening 7a is not limited to this. For example, the metal mask 7 may be a polygon or a circle other than a rectangle when viewed from above. Also, the opening 7a may be formed to match the pattern shape of the organic film, and may be a shape formed by combining multiple rectangles or may be line-shaped.

[0064] Next, as shown in Figure 5(b), a current I is supplied to the main body 2 in the direction from the first electrode 3 to the second electrode 4. This creates a temperature gradient G such that the first main surface 2a is on the lower temperature side, as described above, thus cooling the metal mask 7 and the substrate 8. The temperatures of the metal mask 7 and the substrate 8 are controlled by the control unit 100 by controlling the current I, and the method of this control will be described later.

[0065] Alternatively, a sheet-like material with high thermal conductivity, such as a TIM (Thermal Interface Material), may be placed between the first main surface 2a and the substrate 8 to promote cooling of the substrate 8.

[0066] Next, as shown in Figure 6(a), the chamber 11 is depressurized and vapor of an organic material generated by a deposition source (not shown) is supplied to its interior. As a result, an organic film 9 made of the organic material is formed on the surface of the metal mask 7 and on the surface of the substrate 8 exposed through the opening 7a.

[0067] Subsequently, as shown in Figure 6(b), the metal mask 7 is moved above the substrate 8 using a transport robot (not shown), and then the substrate 8 is removed from the chamber 11. This allows the organic film 9, patterned to the shape of the opening 7a of the metal mask 7, to be formed on the substrate 8.

[0068] This concludes the basic steps of the film formation method according to this embodiment.

[0069] According to the embodiment described above, a temperature gradient G is generated in the main body 2 itself by supplying current I, so that the first main surface 2a of the main body 2 is cooled uniformly. Therefore, unlike when the substrate holder 1 is cooled with a Peltier element or cooling tube, the substrate 8 on the first main surface 2a can be cooled uniformly within that surface, and temperature unevenness in the substrate 8 can be suppressed.

[0070] Furthermore, since there are no Peltier elements or cooling tubes in the substrate holder 1, the magnetic force due to the residual magnetization of the main body 2 is not weakened by these components. Therefore, the metal mask 7 can be strongly attracted to the main body 2 by the magnetic force of the residual magnetization. As a result, the metal mask 7 can be closely attached to the substrate 2, improving the patterning accuracy of the organic film 9.

[0071] Next, the temperature control method by the control unit 100 will be described. As mentioned above, the control unit 100 controls the current I supplied to the main body 2 so that the temperature of a predetermined part in the chamber 11 approaches the target temperature. In the following description, an example will be given in which the temperature sensor 101 measures the temperature T of at least one of the predetermined parts in the chamber 11: the first main surface 2a of the main body 2, the metal mask 7, and the substrate 8.

[0072] FIG. 8 is a flowchart showing an example of the control performed by the control unit 100. This flowchart is executed when the substrate 8 and the metal mask 7 are placed on the substrate holder 1.

[0073] First, the control unit 100 supplies a current I to the main body 2 (step S11).

[0074] Next, the control unit 100 determines whether to end the control of the current I (step S12). For example, when a predetermined time has elapsed since the start of the film formation of the organic film 9 and it is estimated that the film thickness of the organic film 9 has reached the target value, the control unit 100 determines that the control should end (YES), and otherwise determines that the control should not end (NO).

[0075] Here, if it is determined that the control should not end (NO), the process proceeds to step S13. In step S13, the temperature sensor 101 measures the aforementioned temperature T and outputs a temperature measurement signal indicating the temperature T to the control unit 100.

[0076] Next, the control unit 100 determines the value of the temperature T (step S14). In this example, the control unit 100 determines whether the temperature T is less than the target temperature T0 "T < T0", equal to the target temperature T0 "T = T0", or higher than the target temperature T0 "T0 < T". The target temperature T0 is a temperature suitable for the film formation temperature of the organic film 9 and is set in advance in the control unit 100 by the user. As an example, the target temperature T0 is a temperature of 300K or more and 350K or less. [[ID=[]]

[0077] Here, if it is determined that "T < T0", it means that the substrate holder 1 is excessively cooled by the current I. Therefore, in this case, the process proceeds to step S16, and the control unit 100 reduces the current I by ΔI. Note that ΔI is the control step width of the current I. Then, the process returns to step S12. <[]

[0078] On the other hand, if it is determined in step S14 that "T = T0", the temperature T matches the target temperature T0 and there is no need to change the current I. Therefore, in this case, the process returns to step S12 without changing the current I.

[0079] Also, if it is determined in step S14 that "T0 < T", the substrate holder 1 is insufficiently cooled. Therefore, in this case, the process proceeds to step S15, and the control unit 100 increases the current I by ΔI. Then, the process proceeds to step S12.

[0080] On the other hand, if it is determined in step S12 that the control of the current I should be terminated (YES), the process proceeds to step S17, and the control unit 100 stops the supply of the current I to the main body #2 and ends the process.

[0081] Thus, the basic process performed by the control unit 100 is completed.

[0082] According to the temperature adjustment method described above, based on the magnitude relationship between the temperature T and the target temperature T0, the control unit ********** increases or decreases the current I in steps S15 and S16. As a result, the temperature T approaches the target temperature T0, and film formation can be performed at the target temperature T0 suitable as the film formation temperature.

[0083] Note that a heat sink cooled by cooling water may be provided on the lower surface 2b (see FIG. 1(b)) of the main body #2, and the temperature may be adjusted using the heat sink in combination. Thereby, for example, by controlling the flow rate of the cooling water, more precise temperature adjustment becomes possible compared to the case where there is no heat sink.

[0084] (Second Embodiment) In this embodiment, the excessive magnetic force acting on the metal mask 7 from the main body #2 is suppressed as follows.

[0085] [[ID=*30]]FIGS. 9 to 10 are cross-sectional views for explaining the film formation method according to this embodiment. In these figures, the same elements as those described in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted below. [[ID=*31]] It should be noted that there seems to be an error in the reference number in the original text. In the translation, the reference number in the original text is retained as it is. If this is a specific format requirement, please let me know and I can adjust it accordingly based on your instructions. Also, the part "**********" in the translation of ID=16 is a placeholder for the original text that seems to be incomplete or has some unclear content in the provided original text.

[0086] First, as shown in Figure 9, a plate 21 is placed above the main body 2. The plate 21 is a plate-shaped member made of metal or an insulator, and has a front surface 21a and a back surface 21b that are opposite to each other. The substrate 8 and the metal mask 7 are placed on the front surface 21a in that order by a transport robot (not shown).

[0087] Furthermore, to prevent misalignment between the plate 21 and the substrate 8, embedded electrodes may be provided in the plate 21, and the electrostatic force acting between the embedded electrodes and the substrate 8 may prevent misalignment between the plate 21 and the substrate 8. In addition, via holes may be formed in the plate 21, and the substrate 8 may be attracted through these via holes. Alternatively, the substrate 8 may be fixed to the plate 21 with a component such as a leaf spring. Furthermore, the surface 21a of the plate 21 may be given an anti-slip embossed finish to prevent the substrate 8 from sliding on the surface 21a.

[0088] Next, as shown in Figure 10, a transport robot (not shown) is used to place the plate 21 on the main body 2, and the back surface 21b is brought into close contact with the first main surface 2a.

[0089] At this time, the magnetic force F due to the residual magnetization of the main body 2 acts on the metal mask 7, but in this embodiment, the thickness of the plate 21 causes the metal mask 7 to be separated from the first main surface 21a, so it is possible to suppress the magnetic force F from becoming excessively strong.

[0090] Subsequently, a current I is passed between electrodes 3 and 4 to create a temperature gradient G, thereby cooling the first main surface 2a and the substrate 8 via the plate 21. To improve heat conduction between the main body 2 and the substrate 8, the first main surface 2a and the back surface 21b may be polished to prevent any gaps from forming between them. Alternatively, the plate 21 may be formed from a sheet material with high thermal conductivity, such as TIM, to improve heat conduction between the main body 2 and the substrate 8.

[0091] Furthermore, in order to ensure that the temperature of the plate 21 is uniform, it is preferable that the thickness of the plate 21 be sufficiently thinner than the thickness of the main body 2, for example, 0.5 mm or more and 2.0 mm or less.

[0092] Subsequently, while cooling the first main surface 2a in this manner, an organic film is formed on the substrate 8 using the metal mask 7 as a mask, in the same manner as in the first embodiment.

[0093] According to the embodiment described above, the magnetic force F is weakened by interposing the plate 21 between the first main surface 2a and the metal mask 7. This makes it possible for a transport robot (not shown) to peel the plate 21 and the substrate 8 from the main body 2 with a weak force, for example, after an organic film has been formed.

[0094] (Third embodiment) In this embodiment, the plate described in the second embodiment is also given the function of a transport robot.

[0095] Figures 11 and 12 are cross-sectional views illustrating the film deposition method according to this embodiment. In these figures, the same reference numerals are used for elements that were described in the first and second embodiments, and their descriptions are omitted below.

[0096] First, as shown in Figure 11, a plate 21 is placed above the main body 2, similar to the process in Figure 9 of the second embodiment. In this embodiment, a recess 21c is provided in the plate 21, and the substrate 8 is fitted into the recess 21c. This prevents misalignment between the plate 21 and the substrate 8. The depth of the recess 21c is the same as the thickness of the substrate 8, so there is no step between the surface 21a of the plate 21 and the surface of the substrate 8.

[0097] The thickness of the plate 21 is not particularly limited, but it is preferable to set it to, for example, 0.5 mm to 2.0 mm so that the temperature of the plate 21 becomes uniform through contact with the main body 2, similar to the second embodiment. The depth of the recess 21c is, for example, 0.25 mm to 1.5 mm.

[0098] Subsequently, the metal mask 7 is placed on the surface 21a of the plate 21 and the surface of the substrate 8. At this time, as mentioned above, there is no step between the surface 21a and the surface of the substrate 8, so the metal mask 7 adheres well to each of the surfaces 21a and the substrate 8 over a wide area.

[0099] The material of plate 21 is not particularly limited, and plate 21 can be formed from materials such as metal, insulator, and TIM, similar to the second embodiment.

[0100] Figure 13 is a top view of the plate 21. As shown in Figure 13, the plate 21 is provided with alignment marks 21d. The alignment marks 21d are used to align the main body 2 and the plate 21. For example, a metal pattern or recess formed on the surface 21a of the plate 21 can be used as the alignment marks 21d. In this example, the alignment marks 21d are formed in a cross shape when viewed from above, but the alignment marks 21d may also be formed in a rectangular or circular shape when viewed from above.

[0101] Next, as shown in Figure 12, the substrate 8 is placed on the main body 2 using the plate 21 as a transport robot for transporting the substrate 8. At this time, a camera (not shown) recognizes the alignment mark 21d to determine the relative position between the plate 21 and the main body 2, and the plate 21 can be placed in a predetermined position on the main body 2. In order to improve heat conduction between the main body 2 and the plate 21, it is preferable to make the back surface 21b in close contact with the first main surface 2a, as in the second embodiment.

[0102] Subsequently, a current I is passed between electrodes 3 and 4 to create a temperature gradient G, thereby cooling the first main surface 2a, and the substrate 8 is also cooled via the plate 21. In this state, the metal mask 7 is used as a mask, and an organic film is formed on the substrate 8 in the same manner as in the first embodiment.

[0103] According to the embodiment described above, a recess 21c is provided in the plate 21, and the substrate 8 is fitted into the recess 21c. This prevents misalignment between the plate 21 and the substrate 8, so even when the plate 21 is used as a transport robot, it is possible to suppress the substrate 8 falling off the plate 21 or the relative position of the plate 21 and the substrate 8 shifting during transport.

[0104] Furthermore, since there is no step between the surface 21a of the plate 21 and the surface of the substrate 8, and the metal mask 7 adheres well to both the surface 21a and the surface of the substrate 8 over a wide area, the temperature distribution of the substrate 8 can be made uniform.

[0105] (Fourth Embodiment) This embodiment describes a substrate holder that can improve cooling efficiency.

[0106] Figure 14 is a perspective view of the substrate holder according to this embodiment. As shown in Figure 14, the substrate holder 40 includes a first connection terminal 44a, a first electrode 45, and a main body 47.

[0107] The main body 47 is the part of the substrate holder 40 that cools the substrate, and has a laminate formed by alternately stacking a first material plate 41, a second material plate 42, and an insulating layer 43.

[0108] At least one of the first material plate 41 and the second material plate 43 is a plate made of a material that produces any of the effects shown in Figures 2(a) to (c) and Figure 3(a) of the first embodiment. The first material plate 41 and the second material plate 43 may be made of the same material or of different materials.

[0109] The main body 47 has a first main surface 47a on which the above-mentioned plates 41, 42 and the insulating layer 43 are exposed. The plates 41, 42 and the insulating layer 43 are alternately stacked along a direction X parallel to the first main surface 47a and are exposed on the first main surface 47a.

[0110] Furthermore, each plate 41 and 42 is a rectangular plate with its longitudinal direction Y perpendicular to direction X, and its short direction Z perpendicular to both direction X and direction Y.

[0111] There is an optimal size ratio for each plate 41 and 42, derived from the differences in their respective thermoelectric transport properties. The thinner the plates 41 and 42, the higher the electrical resistance of the element, and it is preferable to change this ratio according to the characteristics of the input power supply. For example, the thickness T of each plate 41 and 42 can be 0.1 mm to 5.0 mm, the width W can be 5.0 mm to 50.0 mm, and the height H can be 2.0 mm to 20.0 mm. In addition, the length L of the main body 47 along direction X can be 0.2 mm to 50.0 mm.

[0112] The insulating layer 43 is a layer that electrically insulates each adjacent plate 41, 42. The material of the insulating layer 43 is not particularly limited, but the thinner the thickness, the better the material filling rate of each plate 41, 42, and the more uniform cooling becomes possible within the plane of the first main surface 47a. For example, insulating coating materials, resins, and ceramic plates with a thickness of 0.001 mm to 1.0 mm can be used as the insulating layer 43.

[0113] Figure 15(a) is a top view of the substrate holder 40. As shown in Figure 15(a), the main body 47 comprises a first side surface 47b and a second side surface 47c that are opposite to each other, and a third side surface 47d and a fourth side surface 47e that are opposite to each other.

[0114] On the first side surface 47b, each plate 41, 42 and the insulating layer 43 are exposed, and adjacent plates 41, 42 are electrically connected by the first connection terminal 44a. Similarly, on the second side surface 47c, each plate 41, 42 and the insulating layer 43 are exposed, and adjacent plates 41, 42 are electrically connected by the second connection terminal 44b.

[0115] Furthermore, a first electrode 45 is provided on the first material plate 41 that is exposed on the first side surface 47b, closer to the fourth side surface 47e. And a second electrode 46 is provided on the first material plate 41 that is exposed on the second side surface 47c, closer to the third side surface 47d.

[0116] With this structure, each plate 41 and 42 is insulated by the insulating layer 43, and each plate 41 and 42 is electrically connected by the connection terminals 44a and 44b. Therefore, when a potential difference is applied between the electrodes 45 and 46, a current I flows through each plate 41 and 42 and each terminal 44a and 44b in a meandering manner as shown in the figure. As a result, the current I flows to every corner of the main body 47, which suppresses the occurrence of areas in the main body 47 where the current I does not flow, and creates a temperature gradient throughout the main body 47.

[0117] Figure 15(b) is a cross-sectional view taken along the line III-III in Figure 15(a). As shown in Figure 15(b), the main body 47 has a first main surface 47a that functions as a cooling surface, as well as a second main surface 47f that functions as a heat dissipation surface opposite to the first main surface 47a.

[0118] Figure 16(a) is a top view of the substrate holder 40 with the substrate 8 and metal mask 7 placed on it, and Figure 16(b) is a cross-sectional view along the line IV-IV.

[0119] As shown in Figure 16(b), the metal mask 7 is attracted to the first main surface 47a by the magnetic force F of the residual magnetization of the main body 47, thereby allowing the metal mask 7 to be in close contact with the substrate 8. Furthermore, a temperature gradient G is generated in the main body 47 by supplying current I, such that the first main surface 47a side is at a lower temperature, thereby cooling the substrate 8. Moreover, as described above, in this embodiment, each plate 41 and 42 is insulated by the insulating layer 43, and each plate 41 and 42 is electrically connected by the respective connection terminals 44a and 44b, so that the occurrence of areas in the main body 47 where current I does not flow is suppressed, and a temperature gradient G can be generated throughout the main body 47.

[0120] (Fifth embodiment) In this embodiment, a substrate holder capable of improving cooling efficiency when using an artificial gradient-type multilayer laminate (see Figure 3(b)) is described.

[0121] Figure 17 is a perspective view of the substrate holder according to this embodiment. As shown in Figure 17, the substrate holder 50 includes a first connection terminal 54a, a main body 55, and a first electrode 61.

[0122] The main body 55 is the part of the substrate holder 50 that cools the substrate, and has a laminate formed by alternately stacking a first material plate 51, a second material plate 52, and an insulating layer 53.

[0123] Furthermore, the main body 55 has a first main surface 55a on which the above-mentioned plates 51, 52 and the insulating layer 53 are exposed. The plates 51, 52 and the insulating layer 53 are alternately stacked along a direction X parallel to the first main surface 55a and are exposed on the first main surface 55a. Each plate 51, 52 is a rectangular plate with its longitudinal direction Y perpendicular to direction X and its short direction Z perpendicular to both direction X and direction Y.

[0124] The size of each plate 51 and 52 is not particularly limited. For example, the thickness T of each plate 51 and 52 may be 0.5 mm or more and 5.0 mm or less, the width W may be 5.0 mm or more and 50.0 mm or less, and the height H may be 2.0 mm or more and 20.0 mm or less. Also, the length L of the main body 55 along direction X may be 1.0 mm or more and 50.0 mm or less.

[0125] The insulating layer 53 is a layer that electrically insulates each adjacent plate 51, 52. The thickness and material of the insulating layer 53 are not particularly limited, and the same thickness and material as the insulating layer 43 (see Figure 14) can be used.

[0126] Figure 18 is an exploded perspective view of the main body 55. As shown in Figure 18, the first material plate 51 has magnetic layers 56 and thermoelectric material layers 57 that are alternately stacked in a first stacking direction A1 that is inclined with respect to the main surface 55a. Furthermore, the direction of magnetization M1 of the magnetic layer 56 in the first material plate 51 is the same as the first stacking direction A1 described above.

[0127] On the other hand, the second material plate 52 has magnetic layers 56 and thermoelectric material layers 57 that are alternately stacked in a second stacking direction A2 that is inclined with respect to the main surface 55a. The direction of magnetization M2 of the magnetic layer 56 in the second material plate 52 is the same as the second stacking direction A2 described above.

[0128] The materials of the magnetic layer 56 and thermoelectric layer 57 in each material plate 51 and 52 are not particularly limited. For example, a magnetic material such as SmCo5 can be used for the magnetic layer 56. Also, as the thermoelectric material layer 57, BST(Bi) is a material that has the functions of both a semiconductor and a thermoelectric material. 0.3 S 1.7 Thermoelectric semiconductors such as Te3 can be used. Note that the conductivity type of BST is p-type.

[0129] Figure 19(a) is a top view of the substrate holder 50. As shown in Figure 19(a), the main body 55 comprises a first side surface 55b and a second side surface 55c that are opposite to each other, and a third side surface 55d and a fourth side surface 55e that are opposite to each other.

[0130] On the first side surface 55b, each plate 51, 52 and the insulating layer 53 are exposed, and adjacent plates 51, 52 are electrically connected by the first connection terminal 54a. Similarly, on the second side surface 55c, each plate 51, 52 and the insulating layer 53 are exposed, and adjacent plates 51, 52 are electrically connected by the second connection terminal 54b.

[0131] Furthermore, a first electrode 61 is provided on the first material plate 51 that is exposed on the first side surface 55b, closer to the fourth side surface 55e. And a second electrode 62 is provided on the first material plate 51 that is exposed on the second side surface 55c, closer to the third side surface 55d.

[0132] With this structure, each plate 51, 52 is insulated by the insulating layer 53, and each plate 51, 52 is electrically connected by the connection terminals 54a, 54b. Therefore, when a potential difference is applied between the electrodes 61, 62, a current I flows through each plate 51, 52 and each connection terminal 54a, 54b in a meandering manner as shown in the figure. As a result, the current I flows to every corner of the main body 55, which suppresses the occurrence of areas in the main body 55 where the current I does not flow, and allows a temperature gradient to be generated throughout the main body 55.

[0133] Figure 19(b) is a cross-sectional view along the VV line in Figure 19(a). As shown in Figure 19(b), the main body 55 has a first main surface 55a that functions as a cooling surface, as well as a second main surface 55f that functions as a heat dissipation surface opposite to the first main surface 55a.

[0134] Figure 20(a) is a top view of the substrate holder 50 with the substrate 8 and metal mask 7 placed on it, and Figure 20(b) is a cross-sectional view along the line VI-VI.

[0135] As shown in Figure 20(b), the metal mask 7 is attracted to the first main surface 55a by the magnetic force F of the residual magnetization of the main body 55, thereby allowing the metal mask 7 to be in close contact with the substrate 8. Furthermore, a temperature gradient G is generated in the main body 55 by supplying current I, such that the first main surface 55a side is at a lower temperature, thereby cooling the substrate 8. Moreover, as described above, in this embodiment, each plate 51 and 52 is insulated by the insulating layer 53, while each plate 51 and 52 is electrically connected by the respective connection terminals 54a and 54b. This suppresses the occurrence of areas in the main body 55 where current I does not flow, and allows a temperature gradient G to be generated throughout the entire main body 55.

[0136] (Examples) Next, we will describe some examples.

[0137] Figure 21 is a top view of the substrate holder used in the embodiment. In this embodiment, the substrate holder 50 according to the fifth embodiment was used. The substrate holder 50 was manufactured as follows.

[0138] First, a disc-shaped SmCo5 magnet (YX24 manufactured by Magfine Co., Ltd.) with a diameter of 20 mm and a thickness of 0.5 mm was heated and demagnetized in a vacuum. The heating temperature was 800 °C, and the heating time was 40 minutes.

[0139] Next, BST (Bi 0.3 Sb 1.7 Te3) powder (manufactured by Toyoshima Seisakusho Co., Ltd.) was prepared. The purity of the BST powder was 3N, and the particle size was set to a 200 μm mesh pass. Then, 1.05 g of the BST powder and the above demagnetized SmCo5 magnet were alternately stacked in a carbon die and compacted with a punch to obtain a multilayer compact. The number of layers of the BST powder and the SmCo5 magnet was 10 or more and 13 or less.

[0140] Subsequently, this multilayer compact was sintered using an atmosphere-controlled spark plasma sintering apparatus (SPS-212HFEG manufactured by Fuji Denpa Kogyo Co., Ltd.) to obtain a bulk thermoelectric material. At this time, as the sintering conditions, under a vacuum atmosphere by an oil rotary pump, a uniaxial pressing force of 3 MPa, a sintering temperature of 450 °C, and a sintering time of 20 minutes were adopted.

[0141] The bulk thermoelectric material thus obtained was cut with a diamond wire saw (DWS100 manufactured by Ei Research Co., Ltd.) to cut out a plurality of each of the first material plate 51 and the second material plate 52 from the bulk thermoelectric material. The angle formed by the first lamination direction A of the first material plate 51 (see FIG. 18) and the first main surface 55a was set to approximately 25°. Similarly, the angle formed by the second lamination direction A2 of the second material plate 52 (see FIG. 18) and the first main surface 55a was also set to approximately 25°. Also, regarding the dimensions of each of the plates 51 and 52 shown in FIG. 17, the thickness T (see FIG. 17) was set to approximately 1.5 mm, the height H was set to approximately 7.4 mm, and the width W was set to approximately 15.4 mm. <000051 >

[0142] Furthermore, a paper towel (manufactured by AS ONE) was placed between each plate 51 and 52 as an insulating layer 53, and each plate 51 and 52 and the insulating layer 53 were bonded together with a high heat-resistant resin (Duralco NM25, manufactured by COTRONICS). The orientation of each plate 51 and 52 was such that the first stacking direction A1 and the second stacking direction A2 overlapped by a 180° rotation operation around the Z axis. The total number of first material plates 51 and second material plates 52 was 14, and the length L of the main body 55 (see Figure 17) was approximately 22.0 mm.

[0143] Furthermore, Cerasolza #297 (Kuroda Techno Co., Ltd.) was formed on the surfaces of each plate 51 and 52 exposed on each side 55b and 55c (see Figure 19(a)) by ultrasonic soldering, and then Cerasolza #186 (Kuroda Techno Co., Ltd.) was formed on top of that as the connection terminals 54a and 54b and electrodes 61 and 62. After that, copper wires (manufactured by Niraco Co., Ltd.) were connected to each electrode 61 and 62. Furthermore, each main surface 55a and 55b and each side 55b and 55c were covered with a high heat-resistant resin (Duralco NM25 manufactured by COTRONICS) to obtain the basic structure of the substrate holder 50.

[0144] Subsequently, a pulsed magnetic field generator (manufactured by Toei Kagaku Sangyo Co., Ltd.) generated a magnetic field of 8T parallel to the Z direction (see Figure 17), and this magnetic field was applied to the substrate holder 50 to magnetize the magnetic layers 56 of each plate 51 and 52. With this magnetization method, the first magnetization M1 and the second magnetization M2 (see Figure 18) overlap due to a 180° rotation operation around the Z axis. Therefore, the sum of the magnetizations M1 and M2 is in the Z-axis direction, and the direction of the remanent magnetization coincides with the direction of the temperature gradient G parallel to the Z axis.

[0145] After completing the substrate holder 50 as described above, the first main surface 55a of the substrate holder 50 was covered with a TIM (not shown), and the substrate 8 and metal mask 7 were placed on the TIM in that order. MANION-SC manufactured by Sekisui Polymatec Co., Ltd. was used as the TIM. For the substrate 8, a glass substrate with a side length of approximately 10.0 mm when viewed from above was used. The thickness of the glass substrate was approximately 0.5 mm. For the metal mask 7, a stainless steel plate with a side length of approximately 10.0 mm when viewed from above was used. An opening 7a was formed in the metal mask 7 to expose the substrate 8. The thickness of the metal mask 7 was approximately 0.1 mm.

[0146] When the metal mask 7 is placed on the first main surface 55a in this manner, it was confirmed that the metal mask 7 is attracted to the first main surface 55a by the magnetic force of the residual magnetization of the magnetic layer 56, and that the metal mask 7 adheres well to the substrate 8.

[0147] The inventors of this application set temperature measurement areas A to D in different locations on the metal mask 7. Then, while cooling the substrate holder 50 by supplying current I, they measured the temperature of each temperature measurement area A to D using a thermographic camera.

[0148] Figure 22 shows an image obtained with the thermographic camera. This image was obtained when the magnitude of the current I was set to 2000 mA. As shown in Figure 22, the temperatures in each of the temperature measurement areas A to D are almost the same.

[0149] Figure 23 is a graph obtained by measuring the temperature in each temperature measurement region A to D with a thermographic camera at various currents I. The horizontal axis of Figure 23 represents the magnitude of the current I, and the vertical axis represents the temperature in each temperature measurement region A to D. As shown in Figure 23, the temperatures in each temperature measurement region A to D are almost identical at the same current I. This result confirms that there is no temperature unevenness between the metal mask 7 and the substrate 8 beneath it.

[0150] Note that the temperature begins to rise when the current I exceeds 2000mA. This is because increasing the current I reduces the cooling efficiency of the metal mask 7 due to Joule heating of each plate 51 and 52. When depositing an organic film using the metal mask 7 as a mask, it is sufficient to maintain a temperature that does not alter the organic film, and in practical terms, it is sufficient to maintain the metal mask 7 at or below room temperature (300K). [Explanation of symbols]

[0151] 1...Substrate holder, 2...Main body, 2a...First main surface, 2b...Second main surface, 3...First electrode, 4...Second electrode, 7...Metal mask, 7a...Opening, 8...Substrate, 10...Film deposition apparatus, 11...Chamber, 21...Plate, 41...First material plate, 42...Second material plate, 43...Insulating layer, 44a...First connection terminal, 44b...Second connection terminal, 45...First electrode, 46...Second electrode, 47 ...Main body, 47a...First main surface, 47b...Second main surface, 50...Substrate holder, 51...First material plate, 52...Second material plate, 53...Insulating layer, 54a...First connection terminal, 54b...Second connection terminal, 55...Main body, 55a...First main surface, 55b...Second main surface, 56...Magnetic layer, 57...Thermoelectric material layer, 61...First electrode, 62...Second electrode, 100...Control unit, 101...Temperature sensor.

Claims

1. A main body having residual magnetization and generating a temperature gradient when current is supplied, The main body has a main surface provided on one side of the temperature gradient that attracts the metal mask on the substrate with the magnetic force of the residual magnetization, A substrate holder having the following features.

2. The plate further comprises a surface on which the substrate is placed and a back surface that is in close contact with the main surface. The substrate holder according to claim 1.

3. The surface is provided with a recess into which the substrate fits. The substrate holder according to claim 2.

4. The material of the aforementioned plate is metal or an insulator. A substrate holder according to claim 2 or claim 3.

5. A first electrode electrically connected to the main body, The device further comprises a second electrode electrically connected to the main body, through which the current flows between the first electrode and the main body. A substrate holder according to any one of claims 1 to 4.

6. The direction of the current is parallel to the main surface. A substrate holder according to any one of claims 1 to 5.

7. The direction of the temperature gradient is perpendicular to the main surface. A substrate holder according to any one of claims 1 to 6.

8. The aforementioned body includes a material that exhibits one of the following effects: normal Etschhausen effect, abnormal Etschhausen effect, spin Peltier effect, and off-diagonal Peltier effect. A substrate holder according to any one of claims 1 to 7.

9. The material is exposed on the main surface. The substrate holder according to claim 8.

10. The main body is a laminate in which a first material plate, an insulating layer, and a second material plate are alternately stacked along a direction parallel to the main surface. The first material plate, the insulating layer, and the second material plate are each exposed on the main surface. A substrate holder according to any one of claims 1 to 7.

11. The aforementioned main body is The first side surface of each of the first material plate, the insulating layer, and the second material plate, Each of the first material plate, the insulating layer, and the second material plate is exposed and has a second side facing the first side, A first connection terminal electrically connects the adjacent first material plate and the second material plate on the first side surface, The second side further includes a second connection terminal that electrically connects the adjacent first material plate and the second material plate, The substrate holder according to claim 10.

12. At least one of the first material plate and the second material plate has the remanent magnetization, and the supply of the current generates the temperature gradient. A substrate holder according to claim 10 or claim 11.

13. At least one of the first material plate and the second material plate has magnetic layers and thermoelectric material layers that are alternately stacked in a direction inclined with respect to the main surface. A substrate holder according to claim 10 or claim 11.

14. The aforementioned temperature gradient has a low-temperature side and a high-temperature side. The aforementioned one side is the low-temperature side. A substrate holder according to any one of claims 1 to 13.

15. A chamber whose interior is depressurized, The chamber includes a substrate holder that holds the substrate, The substrate holder is A main body having residual magnetization and generating a temperature gradient when current is supplied, The main body has a main surface provided on the low-temperature side of the temperature gradient, which attracts the metal mask on the substrate with the magnetic force of the residual magnetization, Film deposition equipment.

16. A current is supplied to a body having residual magnetization to create a temperature gradient in the body, The measurement of the temperature of at least one of the main surface provided on one side of the temperature gradient in the main body, the substrate on the main surface, and the metal mask on the substrate attracted to the main surface by the magnetic force of the residual magnetization, This includes controlling the current so that the measured temperature approaches the target temperature. Temperature control method.

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