High-temperature gas supply type process system
The high-temperature gas supply system addresses low heat transfer efficiency in ALE by directly injecting high-temperature gas onto substrates, reducing process time and enhancing productivity in semiconductor manufacturing.
JP2026085871APending Publication Date: 2026-05-25VM INC
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Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- VM INC
- Filing Date
- 2025-10-23
- Publication Date
- 2026-05-25
AI Technical Summary
Technical Problem
Existing thermal atomic layer etching (ALE) processes suffer from low heat transfer efficiency and long process times, limiting productivity in semiconductor manufacturing, especially for 3D structures with high aspect ratios.
Method used
A high-temperature gas supply type process system that includes a shower head with a built-in heater, a baffle, and a high-temperature gas supply module to directly inject high-temperature gas onto the substrate, enhancing thermal conduction, convection, and radiation for efficient heat transfer during the ALE process.
Benefits of technology
The system significantly reduces process time and improves productivity by optimizing gas flow and heat transfer, ensuring rapid and efficient etching of substrates in ALE processes.
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Smart Images
Figure 2026085871000001_ABST
Abstract
To provide a high-temperature gas supply type process system. [Solution] The present invention relates to a high-temperature gas supply type process system. The high-temperature gas type process system includes a shower head 12 positioned opposite the ESC 13; a baffle 14 formed along the edge of the shower head 12; drive units 16a and 16b that move the edge ring 15 up and down to move the substrate (W) up and down; and a high-temperature gas supply module (GS) that supplies high-temperature gas to the underside of the shower head 12.
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