Compounds for forming patterned coatings and devices incorporating the same.

Abstract

To provide compounds for forming patterned coatings and devices incorporating the same. [Solution] A phosphazene derivative compound comprising a skeletal and a chain portion comprising bonded fluorine atoms, and an optoelectronic device comprising such a compound. The chain portion comprises a core portion comprising phosphazene units bonded to the chain portion, comprising an intermediate portion, terminal portions located at its terminals bonded to the intermediate portion, and / or a linker portion of the chain portion. The chain portion comprises a cyclophosphazene comprising a phospho atom of a unit and / or a plurality of units. The device comprises two electrodes and an active region comprising a semiconducting layer longitudinally bounded by the electrodes and transversely confined to an emission region without the compound defined thereby. The device patterning coating comprises the compound in the first transverse portion. The device has a deposited layer of deposited material, but the first portion lacks a closed coating of deposited material.

Description

[Technical Field]

[0001] Related applications This application is a compilation of U.S. provisional patent applications, including U.S. provisional patent application No. 63 / 038,632 filed on June 12, 2020, U.S. provisional patent application No. 63 / 047,778 filed on July 2, 2020, U.S. provisional patent application No. 63 / 066,667 filed on August 17, 2020, U.S. provisional patent application No. 63 / 067,789 filed on August 19, 2020, U.S. provisional patent application No. 63 / 106,243 filed on October 27, 2020, and U.S. provisional patent application No. 63 / 107,393 filed on October 29, 2020, and February 2021. This application claims priority to U.S. Provisional Patent Application No. 63 / 153,834 filed on the 25th, U.S. Provisional Patent Application No. 63 / 163,453 filed on 19 March 2021, U.S. Provisional Patent Application No. 63 / 181,100 filed on 28 April 2021, U.S. Provisional Patent Application No. 63 / 122,421 filed on 7 December 2020, and U.S. Provisional Patent Application No. 63 / 141,857 filed on 26 January 2021, the contents of each of these applications being incorporated herein by reference in their entirety.

[0002] This disclosure relates to optoelectronic devices, in particular to patterned coatings that can and / or may function as nucleation suppression coatings (NICs), and to optoelectronic devices having first and second electrodes separated by a semiconducting layer, and having conductive coatings and / or electrodes patterned using the patterned coatings that can and / or may function as nucleation suppression coatings (NICs), and / or to such NICs. [Background technology]

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconducting layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and each generates holes and electrons moving toward each other through at least one semiconducting layer. When a pair of holes and electrons combine, a photon may be emitted.

[0004] An OLED display panel may contain multiple (sub)pixels, each having an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, the (sub)pixels may be selectively driven by a drive circuit comprising multiple thin-film transistor (TFT) structures electrically coupled by conductive metal wires within a substrate (in some non-limiting examples) on which the electrodes and at least one semiconducting layer are deposited. The various layers and coatings of such a panel are typically formed by a vacuum-based deposition process.

[0005] Such display panels can be used in electronic devices such as mobile phones, as an example of a non-limiting designation.

[0006] In some applications, the objective may be to provide a conductive and / or electrode coating in a pattern for each (sub)pixel of a panel, across one or both of the lateral and cross-sectional sides of the panel, by selectively depositing at least one thin film of a conductive coating for forming device features, such as electrodes and / or electrically coupled conductive elements, during the OLED manufacturing process.

[0007] One way to do this, in some non-limiting applications, involves inserting a fine metal mask (FMM) during the deposition of electrode material and / or electrically coupled conductive elements. However, materials typically used as electrodes have relatively high evaporation temperatures, which affects the ability to reuse FMMs and / or the accuracy of the patterns that can be achieved, and consequently increases cost, labor, and complexity.

[0008] One method to do so involves, in some non-limiting cases, depositing electrode material and then removing the unwanted areas to form a pattern, including by a laser drilling process. However, the removal process often involves the creation and / or presence of fragments, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may not be suitable for use in certain applications and / or with certain devices having specific morphological features. [Overview of the Initiative] [Means for solving the problem]

[0010] In some non-limiting applications, the objective may be to provide an improved mechanism along the optical path through at least a portion of the device in at least one wavelength subrange of the electromagnetic (EM) spectrum, by increasing photon transmission and / or reducing photon absorption, including, but not limited to, providing selective deposition of conductive coatings.

[0011] Herein, examples of the present disclosure are illustrated by reference to the following figures, where the same reference numeral in different figures indicates the same element, and / or, in some non-limiting examples, a similar and / or corresponding element. [Brief explanation of the drawing]

[0012] [Figure 1]This is a simplified block diagram of a cross-sectional side view of an example of a device having multiple layers on its lateral surface, formed by selectively depositing a patterning coating on a first portion of the lateral surface and subsequently depositing a closed coating of the deposited material on a second portion thereof, according to an example of the present disclosure. [Figure 2] This is a schematic diagram illustrating an example of a process for depositing a patterned coating in a certain pattern onto the exposed layer surface of the base layer in an example of the device version shown in Figure 1, according to an example of the present disclosure. [Figure 3] Figure 2 is a schematic diagram illustrating an example of a process for depositing a material onto a second portion of the exposed layer surface, including the deposition pattern of the patterned coating, which is a nucleation suppression coating (NIC). [Figure 4A] Figure 1 is a schematic diagram showing an example of a device version in a cross-sectional view. [Figure 4B] This is a schematic diagram showing the device in Figure 4A in a supplementary plan view. [Figure 4C] Figure 1 is a schematic diagram showing an example of a device version in a cross-sectional view. [Figure 4D] This is a schematic diagram showing the device in Figure 4C in a supplementary plan view. [Figure 4E] Figure 1 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 4F] Figure 1 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 4G] Figure 1 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 5A] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5B] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5C] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5D] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5E] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5F] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5G] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5H] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 5I] This schematic diagram illustrates various potential behaviors of the NIC at the deposition interface with the deposited layer in an example of a device version of Figure 1, based on various examples of the present disclosure. [Figure 6] This is a block diagram of a cross-sectional side view of an example of an electroluminescent device according to an example of the present disclosure. [Figure 7] Figure 1 is a cross-sectional view of the device. [Figure 8] This is a schematic diagram in plan view showing an example of a patterned electrode suitable for use in a version of the device shown in Figure 6, according to an example of the present disclosure. [Figure 9] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 8 taken along line 9-9. [Figure 10A] This schematic diagram shows, in plan view, examples of several electrode patterns suitable for use in an example of the device version shown in Figure 6, according to an example of this disclosure. [Figure 10B] This is a schematic diagram showing an example of an intermediate cross-sectional view of the device in Figure 10C, taken along line 10B-10B. [Figure 10C]This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 10A taken along line 10C-10C. [Figure 11] This schematic diagram shows a cross-sectional view of an example of a version of the device of Figure 6 having an example of a patterned auxiliary electrode, according to an example of the present disclosure. [Figure 12] This is a schematic diagram in plan view showing an example of an auxiliary electrode pattern overlapping at least one emission region and at least one non-emission region, according to an example of the present disclosure. [Figure 13A] This schematic diagram shows, in plan view, an example of a pattern in an example version of the device of Figure 6 having multiple groups of diamond-constituted emission regions, according to an example of the present disclosure. [Figure 13B] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 13A taken along line 13B-13B. [Figure 13C] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 13A taken along line 13C-13C. [Figure 14] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 7, which has an example of an additional deposition step, according to an example of the present disclosure. [Figure 15] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 7, which has an example of an additional deposition step, according to an example of the present disclosure. [Figure 16] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 7, which has an example of an additional deposition step, according to an example of the present disclosure. [Figure 17] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 7, which has an example of an additional deposition step, according to an example of the present disclosure. [Figure 18A] This schematic diagram shows a plan view of an example of a transparent version of the device of Figure 6, which includes an example of at least one pixel region and an example of at least one light-transmitting region having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 18B] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 18A taken along line 18B-18B. [Figure 19A]This schematic diagram shows a plan view of an example of a transparent version of the device of Figure 6, including an example of at least one pixel region and an example of at least one light-transmitting region, according to an example of the present disclosure. [Figure 19B] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 19A taken along line 19-19. [Figure 19C] This is a schematic diagram showing an example of a cross-sectional view of the device in Figure 19A taken along line 19-19. [Figure 20] This schematic diagram may illustrate an example of a process step for manufacturing an example version of the device of Figure 7 having a subpixel region with a second electrode of different thickness, according to an example of the present disclosure. [Figure 21] This schematic diagram shows an example of a cross-sectional view of an example version of the device shown in Figure 6, in which the second electrode is coupled to an auxiliary electrode, according to an example of the present disclosure. [Figure 22] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 6, which has a partition and a protected area such as a recess within the non-emission area of ​​the device, according to an example of the present disclosure. [Figure 23A] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 6, which has a partition and a protected area such as an aperture within the non-emission area, according to various examples of the present disclosure. [Figure 23B] This schematic diagram shows an example of a cross-sectional view of an example version of the device of Figure 6, which has a partition and a protected area such as an aperture within the non-emission area, according to various examples of the present disclosure. [Figure 24] This schematic diagram illustrates an example of the steps in a process for depositing a deposition layer in a certain pattern onto the exposed layer surface of an example version of the device shown in Figure 6, by selective deposition and subsequent removal processes according to an example of the present disclosure. [Figure 25] This is an example of an energy profile showing the relative energy state of adsorbed atoms absorbed on a surface, according to an example of this disclosure. [Figure 26] This is a schematic diagram illustrating the formation of a membrane nucleus according to an example of the disclosure. [Figure 27A]This graph shows the distribution of average diameters obtained from the analysis of samples III-1, III-2, and III-3 according to the example. [Figure 27B] This graph shows the distribution of average diameters obtained from the analysis of samples III-1, III-2, and III-3 according to the example. [Figure 27C] This graph shows the distribution of average diameters obtained from the analysis of samples III-1, III-2, and III-3 according to the example. [Modes for carrying out the invention]

[0013] In this disclosure, a reference number accompanied by at least one numerical value (including but not limited to subscripts) and / or a lowercase alphabetic character (including but not limited to lowercase letters) may be considered to refer to a specific instance and / or subset thereof of the element or feature described by the reference number. Referring to a reference number without referring to the accompanying value and / or character may, as indicated in the context, generally refer to the element or feature described by the reference number and / or the set of all instances described therein. Similarly, a reference number may have the letter "x" instead of a numerical digit. Referring to such a reference number may, as indicated in the context, generally refer to the element or feature described by the reference number and / or the set of all instances described therein, with the letter "x" replaced by a numerical digit.

[0014] This disclosure includes, but is not limited to, specific details to provide a complete understanding of the disclosure, including, but not limited to, certain architectures, interfaces, and / or technologies. In some cases, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications have been omitted to avoid obscuring the description of the disclosure with unnecessary details.

[0015] Furthermore, it will be understood that the block diagrams reproduced herein can represent conceptual diagrams of example components that embody the principles of the technique.

[0016] Accordingly, the components of the systems and methods are represented by conventional symbols in the drawings as necessary, and only these specific details relevant to understanding the examples of this disclosure are shown, so as not to obscure this disclosure with details that would be readily apparent to a person skilled in the art who has an interest in the explanation herein.

[0017] None of the drawings provided herein are drawn to scale and shall not be deemed to limit this disclosure in any way.

[0018] Any feature or effect indicated by a dashed outline may be considered optional in some cases.

[0019] The purpose of this disclosure is to eliminate or mitigate at least one drawback of the prior art.

[0020] This disclosure includes phosphazene derivative compounds comprising a skeletal and a chain portion comprising bonded fluorine atoms, and optoelectronic devices comprising such compounds. The chain portion comprises a core portion comprising phosphazene units bonded to the chain portion, including an intermediate portion, terminal portions located at its terminal ends bonded to the intermediate portion, and / or a linker portion of the chain portion. The chain portion comprises a cyclophosphazene comprising a phospho atom of a unit and / or a plurality of units. The device comprises two electrodes and an active region comprising a semiconducting layer longitudinally bounded by the electrodes and laterally confined to a compound-free emission region defined thereby. The device patterning coating comprises the compound in the first lateral portion. The device has a deposited layer of deposited material, but the first portion lacks a closed coating of deposited material.

[0021] According to a broader aspect of this disclosure, a photoelectronic device is disclosed that includes a compound which is a fluorine-containing phosphazene compound.

[0022] In some non-limiting examples, the compound may include a chain portion, which includes a skeleton and at least one fluorine (F) atom bonded thereto. In some non-limiting examples, the skeleton may be a carbon-containing skeleton. In some non-limiting examples, the chain portion may include an intermediate portion.

[0023] In some non-limiting examples, the intermediate portion may contain at least one of oxygen (O), ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, the intermediate portion may contain a fluorine (F) atom. In some non-limiting examples, the intermediate portion may contain a fluoroalkylene unit. In some non-limiting examples, the intermediate portion may contain a CF2 unit. In some non-limiting examples, the intermediate portion may contain a CHF unit. In some non-limiting examples, the intermediate portion may contain a CH2 unit. In some non-limiting examples, the intermediate portion may contain a saturated bond. In some non-limiting examples, the intermediate portion may contain at least one of oxygen (O), ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, and unsubstituted fluoroalkylene. In some non-limiting examples, the intermediate portion may substantially lack unsaturated bonds. In some non-limiting examples, the intermediate portion may contain up to 10 carbon atoms. In some non-limiting examples, the intermediate portion is given by formula: [ka] It can be expressed as follows, where X is independently hydrogen (H), deuterium (D), fluorine (F), or CF3, a is an integer from 0 to 6, b is an integer from 0 to 12, and the sum of a and b is 15 or less.

[0024] In some non-limiting examples, the chain portion may include terminal portions bonded to an intermediate portion, and the terminal portions are located at the ends of the chain portion. In some non-limiting examples, the terminal portions may include a fluorine (F) atom. In some non-limiting examples, the terminal portions may include at least one of branched alkyl, unbranched alkyl, branched fluoroalkyl, unbranched fluoroalkyl, fluorine-substituted cycloheteroalkyl, branched fluoroalkoxy, unbranched fluoroalkoxy, fluoroaryl, polyfluorosulfanyl, and fluorocycloalkyl. In some non-limiting examples, the terminal portions may include fluorine (F) and hydrogen (H). In some non-limiting examples, the terminal portions may include a CF2H unit. In some non-limiting examples, the terminal portions may be represented by at least one of the formulas: (EC-1), (EC-2), (EC-3), (EC-4), (EC-5), (EC-6), and (EC-7): [ka]

[0025] In some non-limiting examples, a compound may contain a core portion bonded to a chain portion.

[0026] In some non-limiting examples, the chain portion may include a linker portion adapted to bond the chain portion to the core portion. In some non-limiting examples, the linker portion may include at least one of oxygen (O), nitrogen (N), sulfur (S), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, the linker portion may include at least one of oxygen (O), nitrogen (N), sulfur (S), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, and unsubstituted fluoroalkylene. In some limiting examples, the linker portion may have the formula: (EA-1), (EA-2), (EA-3), (EA-4), (EA-5), and (EA-6): [ka] It can be expressed by at least one of the following, where R H This is selected from at least one of hydrogen (H), deuterium (D), CF3, branched alkyl, unbranched alkyl, branched fluoroalkyl, unbranched fluoroalkyl, fluorine-substituted cycloheteroalkyl, branched fluoroalkoxy, unbranched fluoroalkoxy, fluoroaryl, polyfluorosulfanyl, and fluorocycloalkyl.

[0027] In some non-limiting examples, the core portion may include phosphazene units. In some non-limiting examples, the chain portion may be bonded to the phosphorus (P) atom of the phosphazene unit. In some non-limiting examples, the chain portion may include cyclophosphazene. In some non-limiting examples, cyclophosphazene may be provided by multiple phosphazene units. In some non-limiting examples, cyclophosphazene may be provided by several phosphazene units selected from three and four.

[0028] In some non-limiting examples, the chain portion may include a branched portion bonded to at least three portions selected from the intermediate portion, terminal portion, and linker portion. In some non-limiting examples, the branched portion may include at least one of nitrogen (N), amine, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted cycloheteroalkylene, unsubstituted cycloheteroalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, the branched portion may include at least one of nitrogen (N), amine, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, and unsubstituted fluoroalkylene.

[0029] In some non-limiting examples, the compound may exhibit light absorption at wavelengths outside the visible portion of the electromagnetic spectrum. In some non-limiting examples, the compound may exhibit photoluminescence at wavelengths outside the visible portion of the electromagnetic spectrum. In some non-limiting examples, the compound may have an optical gap exceeding at least one of approximately 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV. In some non-limiting examples, the compound may have a melting temperature exceeding approximately 100°C. In some non-limiting examples, the compound may have a sublimation temperature exceeding approximately 100°C. In some non-limiting examples, the compounds may have characteristic surface energies less than at least one of approximately 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm. In some non-limiting examples, the compounds may have refractive indices less than or equal to at least one of approximately 1.5, 1.45, 1.4, 1.35, 1.3, and 1.25.

[0030] In some non-limiting examples, the device may further include first and second electrodes and an active region comprising at least one semiconducting layer, bounded on its transverse side by the electrodes, and confined on its lateral side to an emission region defined by the electrodes, wherein the active region substantially lacks the compound. In some non-limiting examples, the device is a patterning coating comprising the compound, wherein the patterning coating has lateral side The device further includes a patterning coating disposed on a first layer surface of a base layer in a first portion of the surface, and a deposited layer made of a deposited material disposed on a second layer surface, wherein the first portion substantially lacks a closed coating of the deposited material. In some non-limiting examples, the first portion may exclude the lateral surfaces of the emission region. In some non-limiting examples, the second electrode may include at least a portion of the deposited layer as its layer. In some non-limiting examples, the first portion may include the lateral surfaces of the emission region. In some non-limiting examples, the device may further include an auxiliary electrode which includes the deposited layer as its layer. In some non-limiting examples, the device may further include a conductor electrically coupled to the second electrode.

[0031] According to a broader aspect of this disclosure, a photoelectronic device is disclosed comprising a compound including a terminal portion containing CF2H units.

[0032] In some non-limiting examples, the compound may include a chain portion, with the terminal portion located at the end of the chain portion. In some non-limiting examples, the chain portion may include a skeleton and at least one fluorine (F) atom bonded thereto. In some non-limiting examples, the chain portion may include an intermediate portion bonded to the terminal portion.

[0033] In some non-limiting examples, the intermediate portion may contain at least one of oxygen (O), ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, the intermediate portion may contain a fluorine (F) atom. In some non-limiting examples, the intermediate portion may contain a CF2 unit. In some non-limiting examples, the intermediate portion may contain a CH2 unit. In some non-limiting examples, the intermediate portion may contain a fluoroalkylene unit.

[0034] In some non-limiting examples, a compound may contain a core portion bonded to a chain portion.

[0035] In some non-limiting examples, the chain portion may include a linker portion adapted to bond the chain portion to the core portion. In some non-limiting examples, the linker portion may include at least one of oxygen (O), nitrogen (N), sulfur (S), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0036] In some non-limiting examples, the core portion may include phosphazene units. In some non-limiting examples, the chain portion may be bonded to the phosphorus (P) atom of the phosphazene unit. In some non-limiting examples, the core portion may include cyclophosphazene. In some non-limiting examples, cyclophosphazene may be provided by multiple phosphazene units. In some non-limiting examples, cyclophosphazene may be provided by several phosphazene units selected from three and four.

[0037] In some non-limiting examples, the chain portion may be selected such that an equivalent precursor form of the chain portion has a melting temperature greater than approximately 60°C, induced by cleaving the bond between the linker portion and the core portion and bonding hydrogen (H) atoms to the cleaved linker portion.

[0038] In some non-limiting examples, the chain portion may include a branched portion bonded to at least three parts selected from the intermediate portion, terminal portion, and linker portion. In some non-limiting examples, the branched portion may be nitrogen (N), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene It may include at least one of substituted cycloheterazole, unsubstituted cycloheterazole, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0039] In some non-limiting examples, the compound may exhibit light absorption at wavelengths outside the visible portion of the electromagnetic spectrum. In some non-limiting examples, the compound may exhibit photoluminescence at wavelengths outside the visible portion of the electromagnetic spectrum. In some non-limiting examples, the compound may have an optical gap exceeding at least one of approximately 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV. In some non-limiting examples, the compound may have a melting temperature exceeding approximately 100°C. In some non-limiting examples, the compound may have a sublimation temperature exceeding approximately 100°C. In some non-limiting examples, the compounds may have characteristic surface energies less than at least one of approximately 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm. In some non-limiting examples, the compounds may have refractive indices less than or equal to at least one of approximately 1.5, 1.45, 1.4, 1.35, 1.3, and 1.25.

[0040] In some non-limiting examples, the chain portion may lack a continuous perfluorinated unit longer than at least one of eight, seven, and six carbon (C) atoms.

[0041] In some non-limiting examples, the device may further include first and second electrodes and an active region comprising at least one semiconducting layer, bounded by the electrodes at a transverse lateral surface, and confined at a lateral surface within an emission region defined by the electrodes, wherein the active region substantially lacks the compound. In some non-limiting examples, the device further includes a patterning coating comprising the compound, wherein the patterning coating is disposed on a first layer surface of a base layer in a first portion of its lateral surface, and a deposited layer made of a deposited material disposed on a second layer surface, wherein the first portion substantially lacks a closed coating of the deposited material. In some non-limiting examples, the first portion may exclude the lateral surface of the emission region. In some non-limiting examples, the second electrode may include at least a portion of the deposited layer as its layer. In some non-limiting examples, the first portion may include the lateral surface of the emission region. In some non-limiting examples, the device may further include an auxiliary electrode which includes the deposited layer as its layer. In some non-limiting examples, the device may further include a conductor electrically coupled to a second electrode.

[0042] According to a broader aspect of this disclosure, a phosphazene derivative compound is disclosed comprising a first chain portion and a second chain portion, each comprising a skeleton and a fluorine (F) atom bonded thereto, wherein the first chain portion is different from the second chain portion.

[0043] In some non-limiting examples, the compound may further contain phosphazene units, where the first and second chain portions may each be bonded to a phosphorus (P) atom of the phosphazene unit. In some non-limiting examples, the first and second chain portions may be bonded to a common phosphorus (P) atom. In some non-limiting examples, at least one of the first and second chain portions may contain at least one of CF2 units, CH2 units, and fluoroalkylene units. In some non-limiting examples, the ratio of the number of carbon (C) atoms in the first chain portion to the number of carbon (C) atoms in the second chain portion may be at least one of approximately 1:8, 1:6, 2:6, 2:4, 2:3, and 1:3. In some non-limiting examples, the ratio of the number of fluorine (F) atoms in the first chain portion to the number of fluorine (F) atoms in the second chain portion is at least one of the following: approximately 1:16, 1:12, 2:12, 4:12, 4:8, 4:6, and 2:6. Another possibility is also possible.

[0044] In some non-restrictive examples, the first chain portion is given by the formula: [ka] It can be expressed as follows, where t represents an integer from 1 to 3, u represents an integer from 5 to 12, and Z represents at least one of hydrogen (H), deuterium (D), and fluorine (F).

[0045] In some non-restrictive examples, the second chain portion is given by the formula: [ka] It can be expressed as follows, where v is an integer between 1 and 3, w is an integer between 5 and 12, and Z is at least one of hydrogen (H), deuterium (D), and fluorine (F).

[0046] In some non-restrictive examples, the compound is given by formula (X): [ka] It can be expressed as follows, where t and v each represent integers from 1 to 3, u and w each represent integers from 5 to 12, y represents an integer from 2 to 6, and Z individually represents at least one of hydrogen (H), deuterium (D), and fluorine (F).

[0047] In some non-restrictive cases, u and v can be different. In some non-restrictive cases, both t and v can be 1. In some non-restrictive cases, y can be at least one of 3 and 4. In some non-restrictive cases, u can be 8. In some non-restrictive cases, w can be 10.

[0048] According to a broader aspect of this disclosure, formula (PX-1): [ka] A compound comprising a portion by the formula, where R 1 And R2 each independently represents at least one of substituted alkyl, unsubstituted alkyl, substituted alkoxy, unsubstituted alkoxy, and a chain portion containing a skeleton and a fluorine (F) atom bonded thereto, 1 and R 2 However, different compounds are disclosed.

[0049] Layered devices This disclosure generally relates to layered devices, and more specifically to optoelectronic devices. Optoelectronic devices can generally encompass any device that converts electrical signals to photons and vice versa.

[0050] Those skilled in the art will understand that although this disclosure relates to optoelectronic devices, the principle is applicable to any panel having multiple layers, including, but not limited to, at least one layer of conductive deposited material 331 (Figure 3), which includes, and in some non-limiting examples, a thin film, through which an electromagnetic (EM) signal can pass, whole or partially, at an angle to at least one face of the layer.

[0051] Looking at Figure 1, the layered device 100 a A cross-sectional view of an example may be shown. In some non-limiting examples, the device 100 may include multiple layers deposited on the substrate 10, as shown in more detail in Figure 10.

[0052] A horizontal axis identified as the X-axis may be shown together with a vertical axis identified as the Z-axis. A second horizontal axis identified as the Y-axis may be shown substantially crossing both the X-axis and the Z-axis. At least one of the horizontal axes may define a lateral surface 710 of the device 100 (Figure 7). The vertical axis may define a cross-sectional surface of the device 100. Some figures in this specification may be shown in plan view. In such plan view, in some non-limiting examples, a pair of horizontal axes identified as the X-axis and Y-axis, respectively, that substantially cross each other are shown. At least one of these horizontal axes may define a lateral surface 710 of the device 100.

[0053] The layers of device 100 may extend to a side surface 710 substantially parallel to a plane defined by the transverse axis. Those skilled in the art will understand that the substantially flat representation shown in Figure 1 may be an abstraction for illustrative purposes in some non-limiting examples. In some non-limiting examples, localized substantially flat layered portions of different thicknesses and dimensions may exist over the transverse range of device 100, which in some non-limiting examples include the absence of substantially any layer and / or the layer being separated by non-flat transition regions (including transverse gaps and discontinuities).

[0054] Therefore, for illustrative purposes, device 100 may be shown in its cross-sectional side view as a substantially stratified structure of substantially parallel planar layers, but such a display panel may locally exhibit a variety of topographic features for defining feature areas, each of which may substantially exhibit the stratified profile considered in the cross-sectional side view.

[0055] In some non-limiting examples, the lateral surface 710 of the exposed layer surface 11 of device 100 may include a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may include a portion of the exposed layer surface 11 of the base layer of device 100 that extends beyond the first portion 101.

[0056] In some non-limiting examples, in a first portion 101, a nucleation suppression coating (NIC) 110 containing NIC material may be selectively deposited as a closed coating 140 on the exposed layer surface 11 of the substrate 100 of the device 100, but not limited to the first portion 101. However, in a second portion 102, the exposed layer surface 11 of the substrate may substantially lack a closed coating 140 of NIC material.

[0057] NIC NIC110 may include NIC material. In some non-limiting examples, NIC110 may include a closed coating 140 of NIC material.

[0058] NIC110 can provide an exposed layer surface 11 with a relatively low initial adhesion probability S0 for the deposition of the deposited material 331 (under conditions identified in some non-limiting examples by the dual QCM technique described by Walker et al.), which in some non-limiting examples, The initial adhesion probability S0 for the deposition of the deposited material 331 on the exposed layer surface 11 of the base layer of the device 100 on which NIC110 is deposited will be substantially lower.

[0059] Due to the low initial adhesion probability S0 of NIC110 and / or NIC material, in some non-limiting examples, when depositing the deposition material 331 as a film and / or coating in a certain form under similar conditions to the deposition of NIC110 within the device 100, the first portion 101 including NIC110 may substantially lack a closed coating 140 of the deposition material 331.

[0060] In some non-limiting examples, when NIC110 and / or NIC material are deposited in some non-limiting examples as a film and / or coating in device 100 under similar conditions to the deposition of NIC110, the initial adhesion probability S0 for the deposition of the deposition material 331 may be about 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or less than 0.0001.

[0061] In some non-limiting examples, NIC110 and / or NIC material may have an initial adhesion probability S0 for the deposition of silver (Ag) and / or magnesium (Mg) when deposited in some non-limiting examples as a film and / or coating in a certain form under similar conditions to the deposition of NIC110 within device 100, such that S0 is approximately 0.9, 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, or less than 0.0001.

[0062] In some non-limiting examples, when NIC110 and / or NIC material are deposited as a film and / or coating in some non-limiting examples, under similar conditions to the deposition of NIC110 within device 100, the values ​​are approximately 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, and 0.08-0.00. 08, 0.05~0.001, 0.03~0.0001, 0.03~0.0003, 0.03~0.0005, 0.03~0.0008, 0.03~0.001, 0.03~0.005, 0.03~0.008, 0.03~0.01, 0.02~0.0001, 0.02~0.0003, 0.02~0.0005, 0.02~0.0 008, 0.02~0.001, 0.02~0.005, 0.02~0.008, 0.02~0.01, 0.01~0.0001, 0.01~0.0003, 0.01~0.0005, 0.01~0.0008, 0.01~0.001, 0.01~0.005, 0.01~0.008, 0.008~0.0001, 0.008~0. The initial adhesion probability S0 of the deposited material 331 to the deposition may be 0003, 0.008~0.0005, 0.008~0.0008, 0.008~0.001, 0.008~0.005, 0.005~0.0001, 0.005~0.0003, 0.005~0.0005, 0.005~0.0008, or 0.005~0.001.

[0063] In some non-limiting examples, when NIC110 and / or NIC material are deposited in some non-limiting examples as a film and / or coating in some form under similar conditions to the deposition of NIC110 in device 100, the initial adhesion probability S0 for the deposition of multiple deposition materials 531 may be below a certain threshold. In some non-limiting examples, such thresholds may be about 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, or 0.001.

[0064] In some non-limiting examples, the NIC110 and / or NIC material may be, in some non-limiting examples, as a film and / or coating within the device 100. When deposited under conditions similar to those for NIC110, it may have an initial adhesion probability S0 below such a threshold for the deposition of multiple deposit materials 531 selected from Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn). In some further non-limiting examples, NIC110 may exhibit an S0 below such a threshold for the deposition of multiple deposit materials 531 selected from Ag, Mg, and Yb.

[0065] In some non-limiting examples, when NIC110 and / or NIC material are deposited in some non-limiting examples as a film and / or coating in a certain form under conditions similar to the deposition of NIC110 in device 100, the deposition of the first deposition material 331 may exhibit an initial adhesion probability S0 below a first threshold, and the deposition of the second deposition material 331 may exhibit an initial adhesion probability S0 below a second threshold. In some non-limiting examples, the first deposition material 331 may be Ag and the second deposition material 331 may be Mg. In some other non-limiting examples, the first deposition material 331 may be Ag and the second deposition material 331 may be Yb. In some other non-limiting examples, the first deposition material 331 may be Yb and the second deposition material 331 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0066] In some non-limiting examples, NIC110 and / or NIC material may have an extinction coefficient k that is less than about 0.01 for photons with wavelengths exceeding at least one of about 600 nm, 500 nm, 460 nm, 420 nm, or 410 nm, when deposited in some non-limiting examples as a film and / or coating under similar conditions to the deposition of NIC110 within device 100.

[0067] In some non-limiting examples, the NIC 110 may have and / or provide at least one nucleation site for the deposited material 331, including but not limited to due to the NIC material 311 used and / or the deposition environment.

[0068] In some non-limiting examples, the NIC 110 may act as an optical coating. In some non-limiting examples, the NIC 110 can modify at least one property and / or characteristic of the EM radiation, including but not limited to the form of the photons emitted by the device 100. In some non-limiting examples, the NIC 110 may exhibit a certain degree of haze, thereby scattering the emitted light. In some non-limiting examples, the NIC 110 may include a crystalline material for scattering the light transmitted through it. Such scattering of light may, in some non-limiting examples, facilitate the enhancement of the out-coupling of light from the device. In some non-limiting examples, the NIC 110 may first be deposited as a substantially non-crystalline coating, including but not limited to being substantially amorphous, and then, after its deposition, the NIC 110 may be crystallized and thereafter function as an optical coupler.

[0069] In some non-limiting examples, the NIC 810 and / or the patterning coating includes a compound containing a core portion and a chain portion bonded to the core portion. In some further non-limiting examples, the compound contains a plurality of chain portions bonded to the core portion.

[0070] In some non-limiting examples, at least one chain portion includes a backbone and one or more fluorine atoms bonded to the backbone. In some non-limiting examples, the backbone is a carbon-containing backbone. In some non-limiting examples, the backbone contains a heteroatom which can be, as a non-limiting example, silicon. In some non-limiting examples, the chain portion includes a linker portion R B , an intermediate portion R D , and a terminal portion R T . In some further non-limiting examples, the chain portion includes a branching portion R EThis further includes. In some non-restrictive examples, the chain portion contains saturated bonds. In some non-restrictive examples, the bonds in the chain portion are substantially derived from saturated bonds, so that the chain portion is a saturated portion. It becomes a target. In such non-restrictive examples, R B , R D , R T , and / or R E Various parts of the chain, including but not limited to these, are saturated portions.

[0071] While we do not wish to be bound by any particular theory, it is assumed that the presence of multiple ether units within a single chain segment may reduce the melting point of a compound, which may be undesirable, at least in certain applications. Therefore, in some non-limiting examples, the chain segment may contain 4 or fewer, 3 or fewer, 2 or fewer, or a single ether unit.

[0072] Linker part R B It corresponds to the terminal end of the chain portion proximal to the core portion and contains atoms that bond the chain portion to the core portion. In some non-limiting examples, R B This includes O, N, S, substituted or unsubstituted alkylenes, substituted or unsubstituted fluoroalkylenes, substituted or unsubstituted cycloalkylenes, substituted or unsubstituted arylenes, and / or substituted or unsubstituted heteroarylenes. In some non-limiting examples, R B In addition to the aforementioned groups, it includes P=N or a phosphazene group. In some non-restrictive examples, R B This includes O, N, S, substituted or unsubstituted alkylenes, and / or substituted or unsubstituted fluoroalkylenes. In some non-limiting examples, R B This includes O, N, S, substituted or unsubstituted alkylenes, and / or substituted or unsubstituted fluoroalkylenes. In some non-limiting examples, R B It comprises at least one of O, N, S, alkylene, fluoromethylene, and difluoromethylene.

[0073] Middle part R DGenerally, this corresponds to a portion of the chain located between the linker portion and the terminal portion. In some non-restrictive examples, R D This includes O, ether, substituted or unsubstituted alkylenes, substituted or unsubstituted fluoroalkylenes, substituted or unsubstituted cycloalkylenes, substituted or unsubstituted arylenes, and / or substituted or unsubstituted heteroarylenes. In some non-limiting examples, R D It contains a fluorine atom. In some non-limiting examples, R D It contains fluoroalkylene units. In some non-limiting examples, R D This includes CF2 units, CFH units, and / or CH2 units. In some further non-limiting examples, R D It contains two or more CF2 units that combine to form a fluoroalkylene or a portion thereof. In some non-limiting examples, R D It includes at least one CH2 unit and at least one CF2 unit. In some non-limiting examples, R D This includes the etheric unit. In some non-restrictive examples, R D This includes saturated bonds. In some further non-restrictive examples, R D It contains virtually no unsaturated bonds. In some non-limiting examples, R D It contains a maximum of approximately 15, 13, 12, or 10 carbon atoms. In some non-limiting examples, R D This includes O, ether, substituted or unsubstituted alkylenes, and / or substituted or unsubstituted fluoroalkylenes.

[0074] End part R T This corresponds to the terminal end of the chain portion, which can be, for example, the distal end of the chain portion relative to the core portion. For example, the terminal end may correspond to the terminal end of the chain portion opposite the linker portion. In some non-limiting examples, R T It contains a fluorine atom. In some non-limiting examples, R TThis includes branched or unbranched alkyl groups, branched or unbranched fluoroalkyl groups, substituted or unsubstituted cycloheteralkyl groups, branched or unbranched fluoroalkoxy groups, fluoroaryl groups, polyfluorosulfanyl groups, and / or fluorocycloalkyl groups. In some non-limiting examples, R T This includes branched or unbranched alkyl groups, branched or unbranched fluoroalkyl groups, and / or branched or unbranched fluoroalkoxy groups. As used herein, "cycloheteroalkyl" refers to a cycloalkyl group in which one or more constituent carbon atoms are replaced by a corresponding number of heteroatoms, including but not limited to oxygen, nitrogen, and / or sulfur. Non-limiting examples of cycloheteroalkyl groups include those containing morpholine units, piperidine units, pyrrolidine units, azepane units, and / or piperazine units. Some non-limiting examples include R T It contains a maximum of approximately 8, 6, 5, 3, 2, or 1 carbon atom.

[0075] Branching section R E Generally, this corresponds to a portion of a chain where two or more branches of the skeleton extend. In other words, R E It can act as a branching point in the skeleton. For example, branching involves three or more of the other parts that form the chain portion R E This can occur by binding to R. For example, E R can be arranged in various configurations and / or positions of the chain portion. B , R D , and / or R T It can be bound to R. E The three or more parts joined together can be different from each other or the same. As a non-restrictive example, R E This is a chain with two or more R segments. D and / or R T Examples that include two or more R D and / or two or more R T It can be coupled to R. In some non-restrictive examples, EThis includes O, N, S, amines, substituted or unsubstituted alkylenes, substituted or unsubstituted fluoroalkylenes, substituted or unsubstituted cycloalkylenes, substituted or unsubstituted cycloheteralkylenes, substituted or unsubstituted arylenes, and / or substituted or unsubstituted heteroarylenes. In some non-limiting examples, R E This includes O, N, S, amines, substituted or unsubstituted alkylenes, and / or substituted or unsubstituted fluoroalkylenes. In some non-limiting examples, R E It contains a maximum of approximately 8, 6, 5, 3, 2, or 1 carbon atom. In some non-limiting examples, R E It does not contain carbon atoms.

[0076] The core portion, according to some non-limiting examples, includes substituted or unsubstituted organophosphates, substituted or unsubstituted alkyls, substituted or unsubstituted heteroalkyls, substituted or unsubstituted cycloalkyls, substituted or unsubstituted cycloheteroalkyls, substituted or unsubstituted aryls, substituted or unsubstituted heteroaryls, substituted or unsubstituted cyclosiloxanes, and / or organometallic compounds. Non-limiting examples of the core portion include those containing phosphazenes, cyclophosphazenes, triazenes, cyclohexane, adamantane, branched or unbranched alkyls, organometallic complexes, phenyls, naphthyls, and / or cyclosiloxanes. In some non-limiting examples, the core portion includes unsaturated bonds. In some non-limiting examples, the core portion is an unsaturated portion.

[0077] In some non-restrictive examples, the chain portion is given by equation (E-1): [ka] Represented by, where * indicates a bond site within the compound, and R B R represents the linker portion, D R represents the middle part, T This represents the terminal part.

[0078] In some non-restrictive examples, R in equation (E-1) Bis the formula (EA-1), (EA-2), (EA-3), (EA-4), (EA-5), or (EA-6): [ka] It is expressed by, and in equation (EA-2), R H This is H, D (deuterium), CF3, or the intermediate part R. D and terminal portion R T This is a secondary chain portion containing [the specified compound]. The terminal portion is bonded to the intermediate portion of the secondary chain portion. In some non-restrictive examples, the secondary chain portion is represented by formula (ED-1): [ka]

[0079] In some non-restrictive examples, the R of the secondary chain portion D and R T The R of the chain portion D and R T For example, the molecular structure is identical to that of formula (E-1). In some other non-restrictive examples, the R of the secondary chain portion D and R T At least one of these differs from that of the chain portion. As should be understood, the R provided herein with respect to the chain portion D and R T Explanations of various non-limiting examples of the secondary chain portion of R D and R T The same can be applied to the following.

[0080] In some non-restrictive examples, R in equation (E-1) D Equation (EB-1): [ka] It is expressed as follows, where X is independently H, D (deuterium), F, or CF3, a is an integer from 0 to 6, and b is an integer from 0 to 12. In some non-restrictive examples, the sum of a and b is less than or equal to 15, less than or equal to 12, less than or equal to 10, or less than or equal to 9.

[0081] R according to formula (EB-1) D Non-restrictive examples include: [ka]

[0082] In some non-restrictive examples, a is an integer between 1 and 4, b is an integer between 4 and 9, and the sum of a and b is an integer between 6 and 13. In some non-restrictive examples, a is an integer between 2 and 4, b is an integer between 5 and 9, and the sum of a and b is an integer between 6 and 13.

[0083] In some non-restrictive examples, R in equation (E-1) T This is expressed by equations (EC-1), (EC-2), (EC-3), (EC-4), (EC-5), (EC-6), or (EC-7). [ka]

[0084] In some non-limiting examples, the chain portion is the branched portion R. E This includes. Non-limiting examples of such chain segments include: [ka]

[0085] In some non-limiting examples, the chain portion includes a ring-closed carbon-containing skeleton to form a cyclic structure, for example. Non-limiting examples of such cyclic structures include those containing fluorocycloalkyls such as perfluorocyclopentyl and perfluorocyclohexyl.

[0086] R B , R D , R E , and R TIt will be understood that the various explanations can generally be applied to a variety of non-limiting examples of chain segments, including those of formulas (E-2), (E-3), and (E-4). A chain segment may consist of two or more identical segments, for example, two or more R B , two or more R D , two or more R E , and / or two or more R T In examples containing such parts, each such part may be selected independently for each occurrence, according to the various non-limiting examples provided herein.

[0087] In some non-limiting examples, the compound contains a chain portion selected from formulas (F-1) to (F-294): [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

change

change

change

change

change

change

change

change

change

[0088] In some non-limiting examples, the chain portion is selected according to one or more properties of the equivalent precursor form of the chain portion. In some non-limiting examples, the equivalent precursor form is induced by cleaving the bond between the linker portion and the core portion and bonding a hydrogen (H) atom to the cleaved linker portion. In non-limiting examples, the equivalent precursor form of a chain portion containing O as the linker portion may be an alcohol, and the equivalent precursor form of a chain portion containing N as the linker portion may be an amine. In some non-limiting examples, the chain portion is selected such that the equivalent precursor form of the chain portion has a melting temperature greater than about 60°C, 80°C, or 100°C. In some non-limiting examples, the chain portion is selected such that the equivalent precursor form of the chain portion has a refractive index of about 1.4, 1.35, or 1.3 or less. In some non-limiting examples, the chain portion is selected such that the equivalent precursor morphology of the chain portion has a surface energy of approximately 25 dynes / cm, 24 dynes / cm, 23 dynes / cm, 22 dynes / cm, 21 dynes / cm, or 20 dynes / cm or less.

[0089] While we do not wish to be bound by any particular theory, it is assumed that the chain portion is selected such that the equivalent precursor form has (i) a relatively high melting temperature exceeding 60°C as an unrestricted example, (ii) a relatively low refractive index of about 1.4 or less as an unrestricted example, and (iii) a relatively low surface energy of about 23 dynes / cm or less as an unrestricted example, and the compound may exhibit one or more properties advantageous for certain applications, including optoelectronic devices.

[0090] The surface energy of a material, including the surface energy of a thin film formed by depositing a compound, can be measured experimentally, such as by droplet testing, or estimated using parachol. Parachol is an additional property. In some non-limiting examples, the parachol value can be derived by addition based on the atomic composition of the compound. In some other non-limiting examples, parachol can be derived by addition based on the functional groups and / or various parts of the compound. Parachol and surface energy are related by the following equation:

number

[0091] In the formula, γ is the surface energy, P is parachol, V is the molar volume, M is the molecular weight, and ρ is the density. In some non-restrictive cases, the molar volume may be measured experimentally or estimated using various group contribution methods. References for parachol and molar volume values ​​can be found, as non-restrictive examples, in Fedors, RF (1974) Polymer Engineering and Science, 14(2), 147-154 and Knotts et al. (2001) J. Chem. Eng. Data, 46, 1007-1012.

[0092] Here, the inventors found that it may be particularly desirable for certain parts of a compound to have a relatively low parachol value and associated relatively low molar volume to reduce the contribution of such parts to surface energy. In some non-limiting examples, the quotient of parachol (P) to the molar volume (V) of a chain portion (which can also be expressed as "P / V") is less than at least one of about 3, 2.5, 2, 1.8, 1.6, and 1.5. In some non-limiting examples, the P / V of multiple chain portions is less than at least one of about 3, 2.5, 2, 1.8, 1.6, and 1.5.

[0093] While we do not wish to be bound by any particular theory, it is assumed that compounds containing a core portion with a relatively high P / V and a chain portion with a relatively low P / V may be particularly desirable for use in at least certain applications. Therefore, in some non-limiting examples, compounds may contain a core portion with a P / V of at least about 6, 8, 10, 12, 15, 20, 30, or 40, and a chain portion with a P / V of less than about 3, 2.5, 2, 1.8, 1.6, or 1.5.

[0094] As a non-restrictive example, the following table summarizes reference values ​​for parachol, molar volume, and P / V values ​​of a particular functional group. The examples of reference values ​​in the following table are based on data presented by Fedors (1974) and Knotts et al. (2001). [Table 1]

[0095] In some non-limiting examples, NIC810 and / or patterning coatings include compounds containing multiple chain portions. In some non-limiting examples, each chain portion of the multiple chain portions is selected independently of the other chain portions. In some non-limiting examples, the multiple chain portions are identical.

[0096] In some non-limiting cases, the sum of the molar masses of multiple chain segments exceeds approximately 90%, 92%, or 95% of the molar mass of the compound. In some non-limiting cases, the sum of the molar masses of multiple chain segments exceeds approximately 10 times the molar mass of the core segment.

[0097] In some non-limiting examples, the molar mass of each chain segment is approximately 200–900 g / mol, 300–800 g / mol, or 350–650 g / mol.

[0098] In some non-limiting examples, the chain portion lacks consecutive perfluorinated units with more than eight, seven, or six carbon (C) atoms. In a non-limiting example, if the perfluorinated carbon atoms of a perfluorinated unit are bonded to each other in a continuous manner without the presence of non-perfluorinated carbon atoms or heteroatoms between them, the perfluorinated unit may be considered to form a continuous unit.

[0099] In some non-limiting examples, the NIC810 and / or patterning coating is formula (PU-1): [ka] A compound containing a phosphazene unit represented by, wherein R, for each occurrence, independently represents a substituted or unsubstituted alkyl, a substituted or unsubstituted alkoxy, or a chain moiety. In some non-limiting examples, at least one R corresponds to a chain moiety and is represented by formula (E-1), (E-2), (E-3), or (E-4).

[0100] In some non-limiting examples, the compound contains two or more phosphazene units. For example, the compound contains two or more phosphazene units with their ends bonded to form, as a non-limiting example, formula (A-1):

Chemical formula

[0101] In some non-limiting examples, the compound is a polymer with n greater than about 20. As a non-limiting example, in such a polymer, n can be an integer from about 21 to 60, 21 to 50, 21 to 40, or 21 to 30.

[0102] In some non-limiting examples, the compound is an oligomer with n less than about 20. As a non-limiting example, in such an oligomer, n can be an integer from about 2 to 20, 2 to 18, 2 to 15, 2 to 13, 2 to 10, 2 to 8, 2 to 7, 2 to 5, 3 to 5, or 3 to 4. The oligomer can be linear, branched, cyclic, cyclo-linear, and / or cross-linked. In some non-limiting examples, the compound is an oligomeric phosphazene compound. In some non-limiting examples, the compound is a cyclic oligomeric phosphazene.

[0103] In some non-limiting examples, two R groups bonded to the phosphorus of the phosphazene unit may condense with each other to form a cyclic structure. In some non-limiting examples, such compounds have the formula (A-2): [Chemical formula] which may be represented by, wherein R cy represents a cyclic structure formed by condensing two R groups with each other. For example, R cy is, for example, R B , R D , R E , and / or R T and may include various moieties for forming the chain moieties described in various examples herein. In some non-limiting examples, R cy has the formula (CB-1), (CB-2), or (CB-3 ): [Chemical formula] which is represented by, wherein k is an integer from 2 to 9, 2 to 6, 2 to 5, or 2 to 3, j is an integer from 1 to 5, 1 to 3, or 1 to 2, and l is an integer from 1 to 5, 1 to 3, or 1 to 2.

[0104] In some non-limiting examples, the compound contains two or more phosphazene units arranged to form a cyclophosphazene. Such compounds may be represented, for example, by the formula (CA-1) or (CA-2): [Chemical formula]

[0105] In formula (CA-1), m is an integer from 2 to 7.

[0106] In formula (CA-2), r and s each represent an integer from 1 to 6, and the sum of r and s is equal to 2, 3, 4, 5, 6, or 7. In some non-limiting examples, R A , R B , R C , and R Deach independently represents R, and its description is provided above in various non-limiting examples. In some non-limiting examples, R A R B R C and R D are selected such that at least one of R A and R B is different from R C and R D .

[0107] Referring again to formula (CA-2), in some non-limiting examples where r and s each represent an integer of 2 or more, the phosphazene units -N=PR A R B -(represented as "A") and -R C R D P=N-(represented as "B") can be combined in various cyclic configurations with respect to each other. Some non-limiting examples of such bonding arrangements include, but are not limited to, AABB, ABAB, ABBA, AAABB, ABABA, AABAB, ABAAB, BBBAA, BABAB, BBABA, BABBA, AAABBB, AABBAB, ABABAB, and ABABBA.

[0108] In some non-limiting examples, cyclophosphazene is represented by formula (C-1), (C-2), (C-3), (C-4), (C-5), or (C-6) shown below.

Chemical formula

[0109] The descriptions of R provided above in various non-restrictive examples, including but not limited to those provided in relation to equation (PU-1), are also applicable to each occurrence of R in equations (C-1), (C-2), (C-3), (C-4), (C-5), and (C-6). In some non-restrictive examples, R is independently selected for each occurrence in equations (C-1), (C-2), (C-3), (C-4), (C-5), and (C-6). In some other non-restrictive examples, all Rs represented in each given equation are identical to one another.

[0110] In some non-limiting examples, NIC810 and / or patterning coatings comprise a compound containing a cyclophosphazene according to formula (C-2), where at least one R corresponds to a chain portion represented by formula (E-1), (E-2), (E-3), or (E-4). In some further non-limiting examples, at least one R is represented by any one of formulas (F-1) to (F-294). In some further non-limiting examples, the compound comprises two or more different species of chain portions selected from formulas (F-1) to (F-294).

[0111] Non-limiting examples of compounds by formula (C-3) include those in which at least one R is represented by one of the formulas (F-156), (F-157), (F-165), (F-169), (F-209) to (F-239). In some non-limiting examples, all R groups in the compound are identical.

[0112] Non-limiting examples of compounds by formula (C-2) include those in which at least one R is represented by one of the formulas (F-153) to (F-172) and (F-209) to (F-279). In some non-limiting examples, all R groups in the compound are identical.

[0113] In some non-limiting examples, the NIC 810 and / or the patterning coating includes a compound containing a cyclophosphazene according to formula (C-1), (C-2), (C-3), (C-4), (C-5), and / or (C-6), wherein at least one R includes a linker moiety containing O, N, S, substituted or unsubstituted alkylene, fluoromethylene, and / or difluoromethylene. In some non-limiting examples, at least one R includes an intermediate moiety containing substituted or unsubstituted alkylene and / or substituted or unsubstituted fluoroalkylene.

[0114] In some non-limiting examples, a phosphazene derivative compound is provided. The compound includes a first chain moiety and a second chain moiety. The first chain moiety and the second chain moiety each include a backbone and a fluorine atom bonded to the backbone. The first chain moiety is different from the second chain moiety.

[0115] In some non-limiting examples, the NIC 810 and / or the patterning coating includes or is formed by a phosphazene derivative compound containing the first chain moiety and the second chain moiety. It will be understood that the description of the chain moieties according to various non-limiting examples herein may be applicable to each of the first chain moiety and the second chain moiety.

[0116] In some non-limiting examples, the difference between the molar mass of the first chain moiety and the molar mass of the second chain moiety is less than about 600 g / mol, 500 g / mol, 450 g / mol, 300 g / mol, or 200 g / mol.

[0117] In some non-limiting examples, at least one of the first and second chain moieties includes at least one of CF2 units, CH2 units, and fluoroalkylene units.

[0118] In some non-limiting examples, the number of carbon (C) atoms in the first chain differs from the number of carbon atoms in the second chain by approximately 1 to 8 C atoms, 1 to 6 C atoms, 2 to 6 C atoms, 2 to 4 C atoms, 2 to 3 C atoms, or 1 to 3 C atoms. In some non-limiting examples, the number of fluorine (F) atoms in the first chain differs from the number of fluorine atoms in the second chain by approximately 1 to 16 F atoms, 1 to 12 F atoms, 2 to 12 F atoms, 4 to 12 F atoms, 4 to 8 F atoms, 4 to 6 F atoms, or 2 to 6 F atoms.

[0119] In some non-limiting examples, the compound is given by formula (PX-1): [ka]

[0120] It contains phosphazene units by, in the formula, R 1 and R 2 These represent the first and second chain segments, respectively.

[0121] In some non-limiting examples, the compound is a cyclophosphazene derivative represented by the following formula: [ka]

[0122] In the above equation, A represents an integer between 3 and 7, and R 1 represents the first chain portion, B represents an integer from 1 to 13, and R represents an integer from 1 to 13. 2 represents the second chain portion, C represents an integer from 1 to 13, and the sum of B and C is less than or equal to twice the value of A. In the above equation, each chain portion of the first and second chain portions is [P=N] in the above equation. A It can be bonded to the phosphorus atom of the phosphazene unit that constitutes the core portion represented as follows:

[0123] In some non-limiting examples, up to two chain segments are bonded to each phosphorus atom of the phosphazene units that make up the core segment. In some non-limiting examples, B and C are equal. In some further non-limiting examples, each phosphorus atom of the core segment is bonded to the first chain segment and the second chain segment.

[0124] In some non-restrictive examples, compounds according to formula (XA-1) have A = 3, B = 1-5, and C = 1-5. In some further non-restrictive examples, B is 3 and C is 3. Non-restrictive examples of molecular structures according to formula (XA-1) where A is 3 include, but are not limited to, the following: [ka]

[0125] In some non-restrictive examples, compounds according to formula (XA-1) have 4 A, 1-7 B, and 1-7 C. In some further non-restrictive examples, B is 4 and C is 4. Non-restrictive examples of molecular structures according to formula (XA-1) where A is 4 include, but are not limited to, the following: [ka]

[0126] In some non-restrictive examples, the first and second chain segments are bonded to a common phosphorus (P) atom.

[0127] In some non-restrictive examples, the first chain portion can be represented by the following equation: [ka]

[0128] In the above equation, t represents an integer between 1 and 3, u represents an integer between 5 and 12, and Z represents hydrogen (H), deuterium (D), or fluorine (F).

[0129] In some non-restrictive examples, the second chain portion can be represented by the following equation: [ka]

[0130] In the above equation, v represents an integer between 1 and 3, w represents an integer between 5 and 12, and Z represents hydrogen (H), deuterium (D), or fluorine (F).

[0131] In some non-restrictive examples, compounds are represented by the following formula: [ka]

[0132] In equation (XA-2), t and v represent integers from 1 to 3, u and w represent integers from 5 to 12, y represents an integer from 2 to 7, and Z represents hydrogen (H), deuterium (D), or fluorine (F), respectively.

[0133] In some non-restrictive cases, the values ​​of u and w in equation (XA-2) are different. In some non-restrictive cases, both t and v are 1. In some non-restrictive cases, y is 3 or 4. In some non-restrictive cases, u is 8. In some non-restrictive cases, w is 10.

[0134] Non-limiting examples of compounds by formula (XA-1) include those derived from the following table. The following table provides the values ​​for A, B, and C, as well as the respective formula identifiers for the first chain portion R1 and the second chain portion R2 for each derivative compound. [Table 2-1] [Table 2-2] [Table 2-3] Table 2-4 Table 2-5 Table 2-6 Table 2-7 Table 2-8 Table 2-9 Table 2-10 Table 2-11 Table 2-12 Table 2-13 Table 2-14 Table 2-15 Table 2-16 Table 2-17 Table 2-18 Table 2-19 Table 2-20 Table 2-21 Table 2-22 Table 2-23 Table 2-24 Table 2-25 Table 2-26 Table 2-27 Table 2-28 Table 2-29 Table 2-30 Table 2-31 Table 2-32 Table 2-33 Table 2-34 Table 2-35 Table 2-36 Table 2-37 [Table 2-38] [Table 2-39] [Table 2-40] [Table 2-41] [Table 2-42] [Table 2-43]

[0135] In the various non-limiting examples described herein, the molecular formula representing a fragment or part of a compound may include one or more bonds connected by asterisks, indicated by the symbol *, which are used to indicate a bond to another atom (not shown) of the compound to which such fragment or part is bonded.

[0136] In various non-limiting examples of the R group described herein, a skeleton bonded with one or more fluorine atoms is provided. In some non-limiting examples, one or more such fluorine atoms may be replaced by chlorine instead, still conferring substantially similar properties for at least some applications. In various non-limiting examples, one or more H atoms present in the molecule may be optionally replaced with a corresponding number of D (deuterium) atoms.

[0137] The various compounds described herein can be synthesized by carrying out various chemical reactions known in the art. Non-limiting examples of such reactions include, but are not limited to, the reaction of a chlorine-substituted phosphazene with an alcohol (e.g., HO-R) at high temperature in the presence of potassium hydroxide to form an ether bridge between phosphorus and the carbon of the R group. Non-limiting examples of such reaction schemes used to produce cyclotriphosphazene-containing compounds are schematically shown below. [ka]

[0138] In some other non-limiting examples, mixed substitution compounds (e.g., phosphazene derivatives containing two or more different substituents) can be produced by following a synthetic procedure similar to that described above, except that alcohol reactants having the desired substituents may be added in the desired proportions and in the order that produce the compound containing the mixed substituents.

[0139] Various examples of synthetic methods for phosphazene derivatives are, as non-limiting examples, Allcock, Harry R. Chemistry and applications of This is described in *Polyphosphazenes*, Wiley-Interscience, 2003, and *Phosphorus-nitrogen compounds: cyclic, linear, and high polymeric systems*, Elsevier, 2012.

[0140] Somewhat surprisingly, it was found that at least some of the compounds described above exhibit relatively low critical surface tensions. Low-energy surfaces formed by such compounds may exhibit relatively low initial adhesion probabilities and are therefore assumed to be particularly suitable for forming NIC810 and / or patterning coatings. While we do not wish to be bound by any particular theory, it is assumed that critical surface tension may be favorably correlated with surface energy, especially for low surface energy surfaces. For example, a surface exhibiting relatively low critical surface tension may also exhibit relatively low surface energy, and a surface exhibiting relatively high critical surface tension may also exhibit relatively high surface energy. According to some models of surface energy, the critical surface tension of a surface may be equal to, or substantially equal to, the surface energy of such a surface. Referring to Young's equation described above, the lower the surface energy, the larger the contact angle θ, while γSV This also decreases, and therefore, such a surface is more likely to have low wettability and a low initial adhesion probability for the material for forming the conductive coating 830.

[0141] In some non-limiting examples, the surface of NIC810 and / or patterning coatings containing the compounds described herein exhibits a critical surface tension of less than about 20 dynes / cm, less than about 18 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, less than about 10 dynes / cm, less than about 9 dynes / cm, less than about 8 dynes / cm, or less than about 7 dynes / cm. For example, the critical surface tension values ​​in various non-limiting examples herein may correspond to such values ​​measured at approximately room temperature and atmospheric pressure (NTP), corresponding to a temperature of 20°C and an absolute pressure of 1 atm. In some non-limiting examples, the critical surface tension of the surface may be determined by the Zisman method, as further detailed in WAZisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0142] Somewhat surprisingly, it was also found that NIC810 formed from compounds exhibiting relatively low critical surface tension can also exhibit a relatively low refractive index n.

[0143] In some non-limiting examples, the refractive index n of NIC810 and / or compounds is about 1.7 or less. For example, the refractive index of NIC810 may be about 1.6 or less, about 1.5 or less, about 1.4 or less, or about 1.3 or less. In some non-limiting examples, n of NIC810 is about 1.2 to about 1.6, about 1.2 to about 1.5, or about 1.25 to about 1.45. As further explained in the various non-limiting examples above, NIC810 exhibiting a relatively low refractive index may be particularly desirable to enhance the optical properties and / or performance of a device, for example, by enhancing the outcoupling of light emitted by the optoelectronic device.

[0144] In some non-limiting examples, NIC810 and / or compounds exhibit a critical surface tension of about 25 dynes / cm or less and a refractive index of about 1.45 or less. In some non-limiting examples, NIC810 includes materials exhibiting a critical surface tension of about 20 dynes / cm or less and a refractive index of about 1.4 or less. In some non-limiting examples, NIC810 includes materials exhibiting a critical surface tension of about 20 dynes / cm or less and a refractive index of about 1.35 or less or about 1.3 or less.

[0145] In some non-limiting examples, NIC810 and / or compounds are substantially transparent and / or light-transmitting. For example, NIC810 and / or compounds may exhibit extinction coefficients κ of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, or about 0.01 or less in at least a portion of the visible light spectrum. In some non-limiting examples, NIC810 exhibits no light absorption at any wavelength corresponding to the visible portion of the electromagnetic spectrum.

[0146] In some non-limiting examples, NIC810 and / or compounds do not exhibit photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum. In some non-limiting examples, NIC810 and / or compounds do not exhibit photoluminescence when exposed to radiation having wavelengths of approximately 300 nm, 320 nm, 350 nm, and / or 365 nm or longer. In some non-limiting examples, NIC810 and / or compounds may exhibit slight and / or undetectable amounts of absorption when exposed to such radiation.

[0147] In some non-limiting examples, NIC810 and / or compounds have optical gaps greater than approximately 3.4 eV, greater than approximately 3.5 eV, greater than approximately 4.1 eV, greater than approximately 5 eV, or greater than approximately 6.2 eV.

[0148] It will be understood that the refractive index, extinction coefficient, and / or absorption values ​​described herein may correspond to such values ​​measured at wavelengths within the visible range of the electromagnetic spectrum. In some non-limiting examples, the refractive index and / or extinction coefficient values ​​may correspond to values ​​measured at wavelengths of approximately 456 nm, which may correspond to the peak emission wavelength of the blue subpixel; approximately 528 nm, which may correspond to the peak emission wavelength of the green subpixel; and / or approximately 624 nm, which may correspond to the peak emission wavelength of the red subpixel. In some non-limiting examples, the refractive index and / or extinction coefficient values ​​described herein may correspond to values ​​measured at a wavelength of approximately 589 nm, which may correspond approximately to the Fraunhofer D line.

[0149] As those skilled in the art will understand, a combination of (i) a relatively low critical surface tension, for example, about 20 dynes / cm or less or about 15 dynes / cm or less, (ii) a relatively low refractive index, for example, about 1.35 or less or about 1.3 or less, and (iii) a relatively low damping coefficient, for example, about 0.05 or less or about 0.01 or less, may be particularly useful in at least certain specific applications.

[0150] In some non-limiting examples, NIC810 and / or its compounds have melting temperatures of approximately 90°C, 100°C, 110°C, 120°C, 140°C, 150°C, or above approximately 180°C.

[0151] In some non-limiting examples, NIC810 and / or its compounds have sublimation temperatures of approximately 100°C to 300°C, 100°C to 250°C, 120°C to 230°C, 130°C to 220°C, 140°C to 210°C, 140°C to 200°C, or 140°C to 190°C.

[0152] The sublimation temperature of a material can be determined using various methods known in the art. As a non-limiting example, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and taking a certain distance from the source. The sublimation temperature can be determined by determining the temperature required to observe the initiation of material deposition on a mounted quartz crystal microbalance. In some non-limiting examples, the quartz crystal microbalance may be mounted approximately 65 cm away from the source for the purpose of determining the sublimation temperature. In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and measuring the temperature required to observe a specific deposition rate, in some non-limiting examples, of 0.1 A / s, on a quartz crystal microbalance mounted at a constant distance from the crucible, in some non-limiting examples, approximately 65 cm away from the source. In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and determining the temperature required to reach the threshold vapor pressure of the material. In some non-limiting examples, the threshold vapor pressure may be approximately 10⁻⁴ Torr or 10⁻⁵ Torr. In some non-limiting examples, the sublimation temperature of a material can be determined by heating the material in an evaporation source under a high vacuum environment of about 10 e-4 Torr and measuring the temperature required to evaporate the material, thus obtaining a vapor flux sufficient to cause deposition of the material on a surface positioned about 65 cm away from the evaporation source at a rate of about 0.1 angstroms / second. The deposition rate can be measured, in a non-limiting example, using a quartz crystal microbalance positioned about 65 cm away from the evaporation source.

[0153] For example, the presence of various elements in thin films can be detected using a variety of techniques, including but not limited to X-ray photoelectron spectroscopy (XPS). For instance, XPS can be used to determine core-level binding energies and their associated intensities. The measured binding energies can then be compared to the reference binding energies of known elements in various forms and oxidation states to determine the species present in the sample. Non-limiting examples of reference core-level binding energies for phosphorus and nitrogen are summarized in the table below. [Table 3]

[0154] While the binding energies are provided as ranges in the table above, it should be understood that specific reference binding energy values ​​within or outside these ranges can be found in various sources. Examples of such sources include, but are not limited to, BV Crist. (1999). Handbook of The Elements and Native Oxides. XPS International, Inc., AV Naumkin et al., NIST X-ray Photoelectron Spectroscopy Database, NIST Standard Reference Database 20, Version 4.1, NIST, and JFMoulder et al. (1992). Handbook of X-ray Photoelectron Spectroscopy. Perkin-Elmer Corporation.

[0155] In some non-limiting examples, the water contact angle θ on the surface of NIC810 and / or patterning coatings may be about 90 degrees or more, about 100 degrees or more, about 110 degrees or more, about 120 degrees or more, about 130 degrees or more, about 140 degrees or more, or about 150 degrees or more. Various methods may be used to measure such a contact angle θ, including, but not limited to, static or dynamic droplet methods and pendant dropping methods.

[0156] Various methods and theories for determining the surface energy of solids are known. For example, surface energy can be calculated or derived based on a series of contact angle measurements, and here we consider various liquids. A body is brought into contact with a solid surface, and the contact angle between the liquid-vapor interface and the surface is measured. In some non-limiting examples, the surface energy of the solid surface is equal to the surface tension of the liquid that has the highest surface tension to completely wet the surface. For example, a Zisman plot may be used to determine the highest surface tension value that can result in complete wetting of the surface (i.e., a contact angle of 0°).

[0157] In some embodiments, the molecular weight of the compound is about 5000 g / mol or less. For example, the molecular weight of the compound may be about 4500 g / mol or less, about 4000 g / mol or less, about 3800 g / mol or less, or about 3500 g / mol or less.

[0158] In some non-limiting examples, the molecular weight of a compound is approximately 1500 g / mol or more. For example, the molecular weight of a compound may be approximately 1700 or more, approximately 2000 or more, approximately 2200 or more, or approximately 2500 or more.

[0159] In some non-limiting examples, the percentage of the molar weight of a compound attributable to the presence of fluorine atoms is approximately 40%–90%, 45%–85%, 50%–80%, 55%–75%, or 60%–75%. In some non-limiting examples, fluorine atoms constitute the majority of the molar weight of the compound.

[0160] For example, the ratio of the number of fluorine atoms to the number of carbon atoms in a given molecular structure of a compound can be referred to as the "fluorine:carbon" ratio or "F:C". In some non-limiting examples, compounds have an F:C ratio of approximately 9:4 to approximately 1:1.

[0161] In some non-limiting examples, optoelectronic devices are provided. These optoelectronic devices comprise a compound containing a terminal portion, which comprises a CF2H unit.

[0162] Here, it has been found that compounds containing CF2H units at the terminal portion may be particularly useful in at least some applications. In particular, compounds having CF3 units as terminal portions may be adapted to form surfaces with lower surface energy compared to compounds with similar molecular structures except for containing CF2H units at the terminal, but compounds having CF2H units as terminal portions may exhibit other desirable properties, including, but not limited to, higher melting and sublimation temperatures. Therefore, it may be desirable to provide compounds having terminal portions containing CF2H units in at least some applications.

[0163] In some non-limiting examples, the compound comprises a chain portion, and the terminal portion containing CF2H units is located at the terminal end of the chain portion. Various non-limiting examples of chain portions described herein may be applicable to compounds containing CF2H units as terminal portions. In some non-limiting examples, the compound is a phosphazene derivative. In some non-limiting examples, the compound comprises a core portion containing phosphazene units. In some further non-limiting examples, the chain portion is bonded to the phosphorus (P) atom of the phosphazene unit.

[0164] sedimentary layer In some non-limiting examples, in a second portion 102 of the lateral surface 710 of the device 100, a deposited layer 130 containing the deposited material 331 may be disposed as a closed coating 140 on the exposed layer surface 11 of a base layer including, but not limited to, the substrate 10.

[0165] In some non-limiting examples, the sedimentary layer 130 may contain sedimentary material 331 (Figure 3).

[0166] In some non-limiting examples, the sedimentary material 331 contains potassium (K) and sodium (Na). ), may include elements selected from lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), copper (Cu), aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the elements may include K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the elements may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the elements may include Mg, Zn, Cd, or Yb. In some non-limiting examples, the elements may include Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the elements may include Mg, Ag, or Yb. In some non-limiting examples, the element may include Mg or Ag. In some non-limiting examples, the element may be Ag.

[0167] In some non-limiting examples, the deposited material 331 may contain pure metal. In some non-limiting examples, the deposited material 331 may be pure metal. In some non-limiting examples, the deposited material 331 may be pure Ag or substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposited material 331 may be pure Mg or substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0168] In some non-limiting examples, the deposited material 331 may include an alloy. In some non-limiting examples, the alloy may be an Ag-containing alloy, a Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that can range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0169] In some non-limiting examples, the deposited material 331 may include other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the deposited material 331 may include alloys of Ag with at least one other metal. In some non-limiting examples, the deposited material 331 may include alloys of Ag with Mg and / or Yb. In some non-limiting examples, such alloys may be binary alloys having a composition of about 5–95 volume% Ag and the remainder being other metals. In some non-limiting examples, the deposited material 331 may include Ag and Mg. In some non-limiting examples, the deposited material 331 may include Ag:Mg alloys having a composition of about 1:10–10:1 by volume. In some non-limiting examples, the deposited material 331 may include Ag and Yb. In some non-limiting examples, the deposited material 331 may include Yb:Ag alloys having a composition of about 1:20–10:1 by volume. In some non-limiting examples, the deposited material 331 may contain Mg and Yb. In some non-limiting examples, the deposited material 331 may contain an Mg:Yb alloy. In some non-limiting examples, the deposited material 331 may contain Ag, Mg, and Yb. In some non-limiting examples, the deposited layer 130 may contain an Ag:Mg:Yb alloy.

[0170] In some non-limiting examples, the deposited layer 130 may contain at least one additional element. In some non-limiting examples, such additional element may be a nonmetallic element. In some non-limiting examples, the nonmetallic element may be O, S, N, and / or C. In some non-limiting examples, it will be understood by those skilled in the art that such additional elements may be incorporated into the deposited layer 130 as contaminants by their presence in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements in the deposited layer 130. In some non-limiting examples, in the deposited material 331 The concentration of nonmetallic elements may be about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or less than 0.0000001%. In some non-limiting examples, the deposit layer 130 may have a composition in which the total amount of O and C in it is about 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or less than 0.0000001%.

[0171] Here, somewhat surprisingly, it was found that reducing the concentration of certain nonmetallic elements in the deposited layer 130 can facilitate the selective deposition of the deposited layer 130, particularly when the deposited layer 130 is substantially composed of metals and / or metallic alloys. Without wishing to be bound by any particular theory, as a non-limiting example, it can be assumed that certain nonmetallic elements, such as O or C, can be deposited on the surface of the NIC 110 so as to act as nucleation sites for metallic elements in the deposited layer 130 when present in the vapor flux 332 (Figure 3) of the deposited layer 130, and / or in the deposition chamber and / or environment. It can be assumed that reducing the concentration of such nonmetallic elements that can act as nucleation sites can facilitate the reduction of the amount of deposited material 331 deposited on the exposed layer surface 11 of the NIC 110.

[0172] In some non-limiting examples, the deposit material 331 of the first portion 101 and the underlying base layer may contain a common metal.

[0173] In some non-limiting examples, the deposit layer 130 may comprise multiple layers of deposit material 331. In some non-limiting examples, the deposit material 331 of the first layer of multiple layers may differ from the deposit material 331 of the second layer of multiple layers. In some non-limiting examples, the deposit layer 130 may comprise a multilayer coating. In some non-limiting examples, such a multilayer coating may be Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0174] In some non-limiting examples, the deposited material 331 may contain metals having bond dissociation energies of approximately 300 kJ / mol, 200 kJ / mol, 165 kJ / mol, 150 kJ / mol, 100 kJ / mol, 50 kJ / mol, or 20 kJ / mol or less.

[0175] In some non-limiting examples, the deposited material 331 may contain metals having electronegativity of about 1.4, 1.3, or 1.2 or less.

[0176] In some non-limiting examples, the sheet resistance R2 of the deposited layer 130 may generally correspond to the sheet resistance of the deposited layer 130 measured or determined separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the deposited layer 130 may be formed as a thin film. Thus, in some non-limiting examples, the characteristic sheet resistance R of the deposited layer 130 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R2 may be about 10 Ω / □, 5 Ω / □, 1 Ω / □, 0.5 Ω / □, 0.2 Ω / □, or 0.1 Ω / □ or less.

[0177] In some non-limiting examples, the sedimentary layer 130 may be arranged in a pattern that can be defined by at least one region thereof substantially lacking a closed coating 140 of the sedimentary layer 130. In some non-limiting examples, at least one region may separate the sedimentary layer 130 into a plurality of separate fragments. In some non-limiting examples, each of the separate fragments of the sedimentary layer 130 may be a separate second part 102. In some non-limiting examples, the plurality of separate fragments of the sedimentary layer 130 may be physically separated from each other on their lateral surfaces. In some non-limiting examples, at least two of such plurality of separate fragments of the sedimentary layer 130 may be electrically coupled. In some examples, at least two of the multiple individual fragments of the deposited layer 130 may each be electrically coupled to a common conductive layer or coating, including but not limited to a base surface, to allow current to flow between them. In some non-limiting examples, at least two of the multiple individual fragments of the deposited layer 130 may be electrically insulated from each other.

[0178] Selective deposition using patterned coatings Figure 2 is a schematic diagram illustrating a non-limiting example of an evaporation deposition process, generally shown in 200, within a chamber 20 for selectively depositing a patterning coating 210, including but not limited to NIC110 or NPC520, on a first portion 101 of the exposed layer surface 11 of the base layer.

[0179] In process 200, the patterning material 211 is heated under vacuum to evaporate and / or sublimate a certain amount of NIC material and / or NPC material. In some non-limiting examples, the patterning material 211 may entirely and / or substantially contain the material used to form the patterning coating 210. In some non-limiting examples, such material may contain organic material.

[0180] The evaporation flux 212 of the patterning material 211 can flow through the chamber 20 toward the exposed layer surface 11, including in the direction indicated by arrow 21. When the evaporation flux 212 is incident on the exposed layer surface 11, the patterning coating 210 can be formed thereon.

[0181] In some non-limiting examples, as shown in the figure for process 200, the patterning coating 210 may be selectively deposited only on a portion of the exposed layer surface 11, specifically on the first portion 101 in the shown example, by inserting a shadow mask 215, which may be a fine metal mask (FMM) in some non-limiting examples, between the evaporated flux 212 and the exposed layer surface 11. In some non-limiting examples, such a shadow mask 215 may be used to form relatively small feature areas, with feature area sizes on the order of tens of microns or less.

[0182] The shadow mask 215 may have at least one aperture 216 extending thereto, so that a portion of the evaporated flux 212 can pass through the aperture 216 and be incident on the exposed layer surface 11 to form a patterning coating 210. If the evaporated flux 212 does not pass through the aperture 216 but is incident on the surface 217 of the shadow mask 215, this is prevented from being deposited on the exposed layer surface 11 to form a patterning coating 210. In some non-limiting examples, the shadow mask 215 may be configured such that the evaporated flux 212 passing through the aperture 216 can be incident on a first portion 101 but not on a second portion 102. Thus, the second portion 102 of the exposed layer surface 11 may substantially lack the patterning coating 210. In some non-limiting examples (not shown), the patterning coating material 211 incident on the shadow mask 215 may be deposited on its surface 217.

[0183] Therefore, a patterned surface can be generated upon completion of the deposition of the patterning coating 210.

[0184] In some non-limiting examples, the patterning coating 210 used in Figure 2 could be NIC110.

[0185] Figure 3 shows a generally 300 process in a chamber 20 for selectively depositing a closed coating 140 of a deposited layer 130 onto a second portion 102 of the exposed layer surface 11 of the base layer, which substantially lacks the NIC 110 selectively deposited on a first portion 101, including but not limited to the evaporation process 200 of Figure 2. a This is an example of a schematic diagram showing a non-limiting example of the results of the evaporation process shown.

[0186] In some non-limiting examples, the deposit layer 130 may consist of a deposit material 331 containing at least one metal. It will be understood by those skilled in the art that the vaporization temperature of organic materials is typically lower than that of metals that can be used as the deposit material 331.

[0187] Therefore, in some non-limiting examples, employing a shadow mask 215 to selectively deposit a patterning coating 210 such as NIC 110 may be less restrictive compared to directly patterning the deposited layer 130 using such a shadow mask 215.

[0188] Once the NIC 110 is deposited on the first portion 101 of the exposed layer surface 11 of the base layer, the closed coating 140 of the deposit material 331 can be deposited as a deposit layer 130 on the second portion 102 of the exposed layer surface 11 which is substantially lacking the NIC 110.

[0189] Process 300 a Then, a certain amount of the deposit material 331 can be heated under vacuum to evaporate and / or sublimate it. In some non-limiting examples, the deposit material 331 may entirely and / or substantially contain the material used to form the deposit layer 130.

[0190] The evaporation flux 332 of the deposited material 331 can be directed inward into the chamber 20 toward the exposed layer surfaces 11 of the first portion 101 and the second portion 102, including in the direction indicated by the arrow 31. When the evaporation flux 332 is incident on the second portion 102 of the exposed layer surface 11, a closed coating 140 of the deposited material 331 can be formed on it as the deposited layer 130.

[0191] In some non-limiting examples, the deposition of the depositional material 331 may be carried out using open-mask and / or mask-free deposition processes.

[0192] In contrast to the feature area size of the shadow mask 215, it will be understood by those skilled in the art that the feature area size of the open mask may generally be equivalent to the size of the manufactured device 100.

[0193] It will be understood by those skilled in the art that in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, the open mask deposition process described herein may be carried out without using an open mask, thereby exposing the entire surface 11 of the target exposed layer.

[0194] In fact, as shown in Figure 3, the evaporation flux 332 can be incident on both the exposed layer surface 11 of the NIC 110 over the first portion 101 and the exposed layer surface 11 of the base layer over the second portion 102 which substantially lacks the NIC 110.

[0195] The exposed layer surface 11 of NIC 110 in the first portion 101 may exhibit a relatively low initial adhesion probability S0 for deposition of the deposited layer 130 compared to the exposed layer surface 11 of the base layer of the second portion 102, so the deposited layer 130 substantially lacks NIC 110, substantially the second The deposition can be selectively applied only to the exposed layer surface 11 of the base layer of portion 102. In contrast, the evaporation flux 332 that is incident on the exposed layer surface 11 of NIC 110 across the first portion 101 may not be deposited (as shown in 533), and the exposed layer surface 11 of NIC 110 across the first portion 101 may substantially lack the closed coating 140 of the deposited layer 130.

[0196] In some non-limiting examples, the initial deposition rate of the evaporated flux 332 on the exposed layer surface 11 of the base layer of the second portion 102 may exceed approximately 200, 550, 900, 1,000, 1,500, 1,900, or 2,000 times the initial deposition rate of the evaporated flux 332 on the exposed layer surface 11 of the NIC 110 of the first portion 101.

[0197] Therefore, by combining the selective deposition of NIC110 as the patterning coating 210 in Figure 2 using the shadow mask 215 with open-mask and / or mask-free deposition of the deposition material 331, version 100 of device 100 shown in Figure 1 is obtained. a This could result.

[0198] After selectively depositing NIC110 over the first portion 101, a closed coating 140 of the deposited material 331 is used as a deposited layer 130 for the device 100, using open mask and / or mask-free deposition in non-limiting examples. a It may be deposited above but may remain only within the second part 102, which is substantially lacking NIC110.

[0199] Within the first portion 101, the NIC110 may provide an exposed layer surface 11 having a relatively low initial adhesion probability S0 for the deposition of the deposition material 331, which is the device 100 within the second portion 102 a The initial adhesion probability S0 for the deposition of the deposited material 331 to the exposed layer surface 11 of the base material is substantially lower than the initial adhesion probability S0.

[0200] Therefore, the first portion 101 may substantially lack a closed coating 140 of the deposited material 331.

[0201] This disclosure envisions the patterned deposition of a selective coating 210 by an evaporation deposition process including a shadow mask 215, but those skilled in the art will understand that in some non-limiting examples this can be achieved by any suitable deposition process, including but not limited to a microcontact printing process.

[0202] While this disclosure intends for the patterning coating 210 to be NIC 110, those skilled in the art will understand that in some non-limiting examples the patterning coating 210 may be NPC 520. In such examples, portions to which the NPC 520 is deposited (e.g., a first portion 301) may, in some non-limiting examples, have a closed coating 140 of the deposited material 331, while other portions (e.g., a second portion 302) may substantially lack a closed coating 140 of the deposited material 331.

[0203] In some non-limiting examples, the thickness of the patterning coating 210, including but not limited to the NIC 110, and the thickness of the subsequently deposited layer 130 can be varied according to a variety of parameters, including but not limited to a given application and performance characteristics. In some non-limiting examples, the thickness of the NIC 110 may be equal to and / or substantially less than the thickness of the subsequently deposited layer 130. The use of a relatively thin NIC 110 to achieve selective patterning of the deposited layer 130 may be suitable for providing a flexible device 100. In some non-limiting examples, the relatively thin NIC 110 may be a barrier coating 1050 (Figure 10C) or other thin-film capsule A relatively flat surface can be provided on which a TFE (Teflon-Fiber-Effective) layer can be deposited. In some non-limiting examples, providing such a relatively flat surface for the application of such a barrier coating 1050 can increase its adhesion to such a surface.

[0204] Edge effect NIC transition area Looking at Figure 4A, we see that version 400 of device 100 in Figure 1. a This may be shown, which may exaggerate the interface between the NIC 110 in the first portion 101 and the deposited layer 130 in the second portion 102. Figure 4B shows device 400 a This can be represented in a plane.

[0205] As can be seen more clearly in Figure 4B, in some non-limiting examples, the NIC 110 in the first portion 101 may be surrounded on all sides by the sedimentary layer 130 in the second portion 102, thereby the first portion 101 may have a further extent of the NIC 110 on the lateral surfaces along each transverse axis or a boundary defined by the edge 415. In some non-limiting examples, the NIC edge 415 on the lateral surface may be defined by the perimeter of the first portion 101 on such a surface.

[0206] In some non-limiting examples, the first portion 101 has at least one NIC transition region 101 on a lateral surface where the thickness of the NIC 110 can transition from a maximum thickness to a reduced thickness. t This may include the range of the first portion 101 that does not exhibit such a transition, which is the NIC non-transition portion 101 of the first portion 101. n It is identified as. In some non-limiting examples, NIC110 is the NIC non-transition portion 101 of the first portion 101. n A substantially closed coating 140 can be formed in this manner.

[0207] In some non-specific examples, the NIC transition region 101 t In the lateral view, the NIC non-transition portion 101 of the first portion 101 nIt may extend between and the NIC edge 415.

[0208] In some non-restrictive examples, in a plane, the NIC transition region 101 t This is the non-transition portion 101 of the first portion 101 n It may surround and / or extend along its periphery.

[0209] In some non-limiting examples, along at least one horizontal axis, the NIC non-transition portion 101 n Between it and the second part 102 is the NIC transition region 101 t It is possible to occupy the entirety of the first part 101 in such a way as not to have any.

[0210] As shown in Figure 4A, in some non-limiting examples, the NIC 110 may be in the range of approximately 1-100 nm, 2-50 nm, 3-30 nm, 4-20 nm, 5-15 nm, 5-10 nm, or 1-10 nm, for the NIC non-transition portion 101 of the first portion 101. n It may have an average film thickness d2 in the first portion 101. n The average film thickness d2 of NIC110 in can be substantially the same or constant over it. In some non-limiting examples, the thickness of NIC110 is the NIC non-transition portion 101 n In this case, the average film thickness d2 of NIC110 can remain within approximately 95% or 90%.

[0211] In some non-limiting examples, the average film thickness d2 may be approximately 80 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 15 nm, or less than 10 nm. In some non-limiting examples, the average film thickness d2 of NIC110 may exceed approximately 3 nm, 5 nm, or 8 nm.

[0212] In some non-limiting examples, the NIC non-transition portion 101 of the first portion 101 n in The average film thickness d2 of NIC110 can be less than approximately 10 nm. While we do not wish to be bound by any particular theory, somewhat surprisingly, the average film thickness d2 of NIC110, which is greater than zero and less than approximately 10 nm, is at least in some non-limiting examples, such as the NIC non-transition portion 101 of the first portion 101. n Compared to NIC110, which has an average film thickness d2 exceeding 10 nm, this may offer specific advantages in achieving enhanced patterning contrast of the deposited layer 130.

[0213] In some non-specific examples, NIC110 is the NIC transition region 101 t The NIC thickness may decrease from a maximum to a minimum within the first part 101. In some non-limiting examples, the maximum value is the NIC transition region 101 of the first part 101. t and NIC non-transition portion 101 n It may be at the boundary between and / or close to it. In some non-restrictive examples, the minimum may be at and / or close to the NIC edge 415. In some non-restrictive examples, the maximum may be at the NIC non-transition portion 101 of the first portion 101. n The average film thickness d2 may be in the first part 101 of the NIC non-transition part 101. In some non-limiting examples, the maximum value is in the first part 101 of the NIC non-transition part 101. n The average film thickness d2 may be approximately 95% or less of the average film thickness d2. In some non-limiting cases, the minimum value may be in the range of approximately 0 to 0.1 nm.

[0214] In some non-specific examples, the NIC transition region 101 t The profile of the NIC thickness in a given material can be sloped and / or follow a gradient. In some non-limiting examples, such a profile can be tapered. In some non-limiting examples, the taper can follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0215] In some non-specific examples, NIC110 is the NIC transition region 101 tThe base surface in can be completely covered. In some non-limiting examples, at least a portion of the base surface is the NIC transition region 101 t In some non-limiting examples, the NIC110 may remain uncovered by the NIC transition region 101. t It may include a coating 140 that is substantially closed in at least a portion of it.

[0216] In some non-specific examples, NIC110 is the NIC transition region 101 t At least a portion of this may include a discontinuous layer 440 (Figure 4C).

[0217] In some non-limiting examples, at least a portion of the NIC 110 in the first portion 101 may substantially lack the closed coating 140 of the deposited layer 130. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 101 may substantially lack the deposited layer 130 or the deposited material 331.

[0218] In some non-limiting examples, along at least one horizontal axis including but not limited to the x-axis, the NIC non-transition region 101n may have a width of w1, and the NIC transition region 101 t It may have the width of w2. In some non-restrictive examples, the NIC non-transition region 101 n In some non-limiting examples, the cross-sectional area may be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the NIC transition portion 101 t In some non-specific examples, the NIC transition portion 101 t It may have a cross-sectional area that can be roughly calculated by multiplying the average film thickness over a certain period by the width w1.

[0219] In some non-restrictive cases, w1 may exceed w2. In some non-restrictive cases, the quotient of w1 / w2 may be at least about 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, or 100,000.

[0220] In some non-limiting examples, at least one of w1 and w2 may exceed the average thickness d1 of the base layer.

[0221] In some non-restrictive cases, at least one of w1 and w2 may exceed d2. In some non-restrictive cases, both w1 and w2 may exceed d2. In some non-restrictive cases, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0222] Sedimentary layer transition region As can be seen more clearly in Figure 4B, in some non-limiting examples, the NIC 110 in the first portion 101 may be surrounded by the sedimentary layer 130 in the second portion 102, thereby the second portion 102 having a boundary defined by a further extent of the sedimentary layer 130 or by an edge 435 along each transverse axis on the transverse side. In some non-limiting examples, the sedimentary layer edge 435 on the transverse side may be defined by the periphery of the second portion 102 on such side.

[0223] In some non-limiting examples, the second portion 102 is a lateral surface where the thickness of the sedimentary layer 130 can transition from a maximum thickness to a reduced thickness, and there is at least one sedimentary layer transition region 102 t This may include the non-transition portion 102 of the sedimentary layer of the second portion 102, which does not exhibit such a transition. n It is identified as follows. In some non-limiting examples, the sedimentary layer 130 is the non-transitional portion 102 of the sedimentary layer of the second portion 102. n A substantially closed coating 140 can be formed in this manner.

[0224] In some non-limiting examples, in the plane, the sedimentary layer transition region 102 t In the lateral view, the non-transition portion 102 of the second portion 102 of the sedimentary layer n It may extend between the sedimentary layer edge 435.

[0225] In some non-limiting examples, in the plan view, the sedimentary layer transition region 102t This is the non-transition portion 102 of the second portion 102 of the sedimentary layer. n It may surround and / or extend along its periphery.

[0226] In some non-limiting examples, along at least one horizontal axis, the second portion 102 of the sedimentary layer non-transition portion 102 n Between it and the first part 101 is a sedimentary layer transition region 102 t It is possible to occupy the entirety of the second part 102 in such a way as not to have any.

[0227] As shown in Figure 4A, in some non-limiting examples, the deposited layer 130 may be in the range of approximately 1-500 nm, 5-200 nm, 5-40 nm, 10-30 nm, or 10-100 nm, and the non-transition portion 102 of the deposited layer 102 n The average film thickness d3 may be present. In some non-limiting examples, d3 may exceed approximately 10 nm, 50 nm, or 100 nm. In some non-limiting examples, the deposited layer non-transition portion 102 of the second portion 102 t The average thickness d3 of the deposited layer 130 in this region may be substantially the same or constant over it.

[0228] In some non-limiting cases, d3 may exceed the average thickness d1 of the base layer.

[0229] In some non-limiting examples, the quotient d3 / d1 may be at least about 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d1 may be in the range of about 0.1 to 10, or 0.2 to 40.

[0230] In some non-limiting cases, d3 may exceed the average film thickness d2 of NIC110.

[0231] In some non-limiting examples, the quotient d3 / d2 may be at least about 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d2 may be in the range of about 0.2 to 10, or 0.5 to 40.

[0232] In some non-restrictive cases, d3 may exceed d2, and d2 may exceed d1. In some other non-restrictive cases, d3 may exceed d1, and d1 may exceed d2.

[0233] In some non-restrictive cases, the quotient d2 / d1 can be approximately 0.2 to 3, or 0.1 to 5.

[0234] In some non-limiting examples, the non-transition region 102 of the sedimentary layer of the second portion 102 is defined along at least one horizontal axis, including but not limited to the x-axis. n It may have a width of w3. In some non-restrictive examples, the non-transition region 102 of the second portion 102 of the sedimentary layer n In some non-limiting examples, it may have a cross-sectional area a3 which can be estimated by multiplying the average film thickness d3 by the width w3.

[0235] In some non-restrictive examples, w3 is the NIC non-transition region 101 n The width w1 may exceed the limit. In some non-restrictive cases, w1 may exceed w3.

[0236] In some non-restrictive cases, the quotient w1 / w3 may be in the range of approximately 0.1 to 10, 0.2 to 5, 0.3 to 3, or 0.4 to 2. In some non-restrictive cases, the quotient w3 / w1 may be at least 1, 2, 3, or 4.

[0237] In some non-limiting cases, w3 may exceed the average film thickness d3 of the deposited layer 130.

[0238] In some non-restrictive cases, the quotient w3 / d3 may be at least about 10, 50, 100, or 500. In some non-restrictive cases, the quotient w3 / d3 may be less than about 100,000.

[0239] In some non-limiting examples, the sedimentary layer 130 is in the sedimentary layer transition region 102 tIt may have a thickness that decreases from a maximum to a minimum within it. In some non-limiting examples, the maximum value is in the second part 102 of the sedimentary layer transition region 102. t and non-transition portion 102 n It may be at the boundary between and / or close to it. In some non-restrictive examples, the minimum may be at and / or close to the sedimentary layer edge 435. In some non-restrictive examples, the maximum may be at the non-transitional sedimentary layer portion 102 of the second portion 102. n The average film thickness d3 can be in the range of approximately 0 to 0.1 nm in some non-limiting examples. In some non-limiting examples, the minimum value is in the non-transition portion 102 of the deposited layer of the second portion 102. n This could be the average film thickness d3.

[0240] In some non-limiting examples, the sedimentary layer transition region 102 t The thickness profile in a can be inclined and / or follows a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, non-linear, parabolic, and / or exponentially decaying profile.

[0241] In some non-exclusive examples, version 400 of device 100 is shown in Figure 4E. e As shown in the non-limiting example in the example, the sedimentary layer 130 is a sedimentary layer transition region 102 t The base surface can be completely covered. In some non-limiting examples, less of the base surface Part of it is the sedimentary layer transition zone 102 t It is not necessary for the area to be covered by the sedimentary layer 130. In some non-limiting examples, the sedimentary layer 130 is located in the sedimentary layer transition region 102. t It may include a coating 140 that is substantially closed in at least a portion of it.

[0242] In some non-limiting examples, the sedimentary layer 130 is in the sedimentary layer transition region 102 t It may include a discontinuous layer 440 in at least a portion of it.

[0243] Those skilled in the art will understand that, although not explicitly shown, NIC material may also be present to some extent at the interface between the deposited layer 130 and the base layer. Such material may be deposited as a result of a shadowing effect, in which case the deposition pattern will not be identical to the mask pattern, and in some non-limiting examples, some evaporated NIC material may be deposited on a masked portion of the target exposed layer surface 11. In non-limiting examples, such material may be formed as a granular structure 441 (Figure 4C) and / or as a thin film with a thickness that may be substantially less than the average thickness of the NIC 110.

[0244] overlap In some non-limiting examples, the sedimentary layer edge 435 has no overlap between the first portion 101 and the second portion 102 on the lateral side, and the NIC non-transition portion 101 of the first portion 101 n They can be separated from each other.

[0245] In some non-limiting examples, at least a portion of the first portion 101 and at least a portion of the second portion 102 may overlap in the lateral view. Such overlap may be identified by an overlapping portion 403 in which at least a portion of the second portion 102 overlaps with at least a portion of the first portion 101, as can be shown in Figure 4A as a non-limiting example.

[0246] In some non-limiting examples, as shown by the non-limiting example in Figure 4F, the sedimentary layer transition region 102 t At least a portion of it is the NIC transition region 101 t It may be positioned above at least a portion of it. In some non-limiting examples, the NIC transition region 101 t At least a portion of the depositional layer 130 and / or depositional material 331 may substantially lack. In some non-limiting examples, the depositional material 331 is the NIC transition region 101 t A discontinuous layer 440 can be formed on at least a portion of the exposed layer surface 11.

[0247] In some non-limiting examples, as shown in Figure 4G, the sedimentary layer transition region 102 t At least a portion of the first portion 101 is the NIC non-transition portion 101 n It may be positioned above at least a portion of it.

[0248] Although not shown, those skilled in the art will understand that in some non-limiting examples, the overlapping portion 903 may reflect a situation in which at least a portion of the first portion 101 overlaps with at least a portion of the second portion 102.

[0249] Therefore, in some non-restrictive examples, the NIC transition region 101 t At least a portion of it is the sedimentary layer transition region 102 t It may be located above at least a portion of it. In some non-limiting examples, the sedimentary layer transition region 102 t At least a portion of the NIC 110 and / or NIC material may substantially lack. In some non-limiting examples, the NIC material is present in the depositional layer transition region 102 t A discontinuous layer 440 can be formed on at least a portion of the surface of the exposed layer.

[0250] In some non-specific examples, the NIC transition region 101 t At least a portion of the second portion 102 is the non-transition portion 102 n It may be positioned above at least a portion of it.

[0251] In some non-limiting examples, the NIC edge 415 has a second part on its lateral side. Non-transition portion 102 of 02 n They can be separated from each other.

[0252] In some non-limiting examples, the sedimentary layer 130 is the non-transitional portion 102 of the second portion 102. n and sedimentary layer transition region 102 t It can be formed as a single monolithic coating spanning both sides.

[0253] Edge effects of NIC and deposited layers Figures 5A to 5I describe the various potential behaviors of NIC110 at the deposition interface with the deposition layer 130.

[0254] Figure 5A shows a first example of a subset of examples of version 500 of device 100 at the NIC deposition boundary. Device 500 may include a substrate 10 having an exposed layer surface 11. The NIC 110 may be disposed above a first portion 101 of the exposed layer surface 11. The deposition layer 130 may be disposed above a second portion 102 of the exposed layer surface 11. As shown, in a non-limiting example, the first portion 101 and the second portion 102 may be separate, non-overlapping portions of the exposed layer surface 11.

[0255] The sedimentary layer 130 may include a first portion 130a and the remaining portion 130b. As shown, in a non-limiting example, the first portion 130a of the sedimentary layer 130 may substantially cover the second portion 102, and the second portion 130b of the sedimentary layer 130 may partially protrude above and / or overlap the first portion of the NIC 110.

[0256] In some non-limiting examples, the NIC 110 may be formed such that its exposed layer surface 11 exhibits a relatively low initial adhesion probability S0 for the deposition of the deposited material 331, thereby allowing a gap 529 to form between a protruding and / or overlapping second portion 130b of the deposited layer 130 and the exposed layer surface 11 of the NIC 110. As a result, the second portion 130b may be separated from the NIC 110 by the gap 529 on its cross-sectional side, rather than being able to physically contact the NIC 110. In some non-limiting examples, the first portion 130a of the deposited layer 130 may be in physical contact with the NIC 110 at the interface and / or boundary between the first portion 101 and the second portion 102.

[0257] In some non-limiting examples, a protruding and / or overlapping second portion 130b of the deposit layer 130 may extend laterally above the NIC 110 to a extent equivalent to the thickness t1 of the deposit layer 130. In a non-limiting example, as shown, the width w2 of the second portion 130b may be equivalent to the thickness t1. In some non-limiting examples, the ratio w2:t1 may be in the range of approximately 1:1 to 1:3, 1:1 to 1:1.5, or 1:1 to 1:2. While the thickness t1 may be relatively uniform across the deposit layer 130 in some non-limiting examples, the extent to which the second portion 130b may protrude from and / or overlap with the NIC 110 (i.e., w2) may vary to some extent across different portions of the exposed layer surface 11.

[0258] Looking at Figure 5B, the deposit layer 130 may be shown to include a third portion 130c positioned between a second portion 130b and the NIC 110. As shown, the second portion 130b of the deposit layer 130 may extend laterally above and spaced apart from the third portion 130c of the deposit layer 130, and the third portion 130c may be in physical contact with the exposed layer surface 11 of the NIC 110. The thickness t3 of the third portion 130c of the deposit layer 130 may be less than the thickness t1 of its first portion 130a, and in some non-limiting examples, substantially less. In some non-limiting examples, the width w3 of the third portion 130c may exceed the width w2 of the second portion 130b. In some non-limiting examples, the third portion 130c may extend laterally to overlap with the NIC 110 over a larger area than the second portion 130b. In some non-limiting examples, the ratio of w3:t1 may range from approximately 1:2 to 3:1, or from 1:1.2 to 2.5:1. While the thickness t1 may be relatively uniform across the deposited layer 130 in some non-limiting examples, the extent to which a third portion 130c may protrude from and / or overlap with the NIC 110 (i.e., w3) may vary to some extent across different portions of the exposed layer surface 11.

[0259] The thickness t3 of the third part 130c cannot exceed approximately 5% of the thickness t3 of the first part 130a. As a non-limiting example, t3 may be less than approximately 4%, 3%, 2%, 1%, or 0.5% of t1. As shown, instead of, and / or in addition to, forming the third part 130c as a thin film, the material of the deposited layer 130 may be formed as a particle structure 441 in part of the NIC 110. As a non-limiting example, such a particle structure 441 may include feature portions that are physically separated from each other so as not to form a continuous layer.

[0260] Looking at Figure 5C, the NPC520 can be placed between the substrate 10 and the deposited layer 130. The NPC520 can be placed between a first portion 130a of the deposited layer 130 and a second portion 102 of the substrate 10. The NPC520 is shown as being placed in the second portion 102, rather than the first portion 101 on which the NIC 110 is deposited. At the interface and / or boundary between the NPC520 and the deposited layer 130, the surface of the NPC520 can be formed such that it exhibits a relatively high initial adhesion probability S0 for the deposition of the deposited material 331. Therefore, the presence of the NPC520 can promote the formation and / or growth of the deposited layer 130 during deposition.

[0261] Looking at Figure 5D, the NPC520 may be disposed on both the first portion 101 and the second portion 102 of the substrate 10, and the NIC110 may cover a portion of the NPC520 disposed on the first portion 101. Another portion of the NPC520 may substantially lack the NIC110, and the deposited layer 130 covers such portion of the NPC520.

[0262] Looking at Figure 5E, the deposited layer 130 may be shown to partially overlap with a portion of the NIC 110 in a third portion 503 of the substrate 10. In some non-limiting examples, in addition to the first portion 130a and the second portion 130b, the deposited layer 130 may further include a fourth portion 130d. As shown, the fourth portion 130d of the deposited layer 130 may be positioned between the first portion 130a and the second portion 130b of the deposited layer 130, and the fourth portion 130d may be in physical contact with the exposed layer surface 11 of the NIC 110. In some non-limiting examples, the overlap in the third portion 503 may be formed as a result of lateral growth of the deposited layer 130 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of NIC 110 may exhibit a relatively low initial adhesion probability S0 for the deposition of the deposited material 331, and therefore, as the thickness of the deposited layer 130 grows, the probability of the material nucleating on the exposed layer surface 11 may decrease. However, the deposited layer 130 may also grow laterally and cover a subset of NIC 110, as shown.

[0263] Looking at Figure 5F, a first portion 101 of the substrate 10 may be covered with NIC 110, and an adjacent second portion 102 may be covered with deposited layer 130. In some non-limiting examples, it has been observed that by performing open-mask and / or mask-free deposition of the deposited layer 130, a deposited layer 130 exhibiting a tapered cross-sectional profile at and / or near the interface between the deposited layer 130 and NIC 110 can be obtained.

[0264] In some non-limiting examples, the thickness of the deposit layer 130 at and / or near the interface may be less than the average thickness of the deposit layer 130. Such tapered profiles may be shown as curved and / or arched, but in some non-limiting examples, this profile may be substantially linear and / or non-linear. As a typical example, the thickness of the sedimentary layer 130 may decrease substantially linearly, exponentially, and / or quadratically in the region proximal to the interface, without limitation.

[0265] The contact angle θ of the deposited layer 130 at the interface between the deposited layer 130 and NIC 110 and / or near thereto. c It was observed that this can vary depending on the characteristics of NIC110, such as the relative initial adhesion probability S0. Furthermore, the contact angle θ of the nucleus c In some non-limiting cases, it can be assumed that this can determine the thin film contact angle of the deposited layer 130 formed by deposition. Referring to Figure 5F as a non-limiting example, the contact angle θ c This can be determined by measuring the inclination of the tangent to the deposited layer 130 at or near the interface between the deposited layer 130 and the NIC 110. In some non-limiting examples where the cross-sectional taper profile of the deposited layer 130 may be substantially linear, the contact angle θ c This can be determined by measuring the inclination of the deposited layer 130 at and / or near the interface. As will be understood by those skilled in the art, the contact angle θ c This can generally be measured with respect to the angle of the base surface. In this disclosure, for the sake of simplicity of illustration, the NIC 110 and the deposited layer 130 may be shown deposited on a flat surface. However, those skilled in the art will understand that the NIC 110 and the deposited layer 130 may be deposited on a non-flat surface.

[0266] In some non-limiting examples, the contact angle θ of the sedimentary layer 130 is c This can exceed approximately 90°. Referring here to Figure 5G, as a non-limiting example, the deposited layer 130 may be shown as including a portion that extends beyond the interface between NIC 110 and the deposited layer 130 and can be separated from NIC by a gap 529. In such a non-limiting situation, the contact angle θ c In some non-restrictive cases, this can exceed 90°.

[0267] In some non-restrictive cases, a relatively high contact angle θ c It may be advantageous to form a sedimentary layer 130 exhibiting the following characteristics. As a non-limiting example, the contact angle θ cThis can exceed approximately 10°, 15°, 20°, 25°, 30°, 35°, 40°, 50°, 70°, 75°, or 80°. A non-limiting example is a relatively high contact angle θ. c The deposited layer 130 having this characteristic can enable the fabrication of finely patterned features while maintaining a relatively high aspect ratio. As a non-limiting example, a contact angle θ greater than approximately 90° c The objective may be to form a sedimentary layer 130 exhibiting the following characteristics. As a non-limiting example, the contact angle θ c This can exceed approximately 90°, 95°, 100°, 105°, 110°, 120°, 130°, 135°, 140°, 145°, 150°, or 170°.

[0268] Looking at Figures 5H to 5I, the deposited layer 130 may partially overlap with a portion of the NIC 110 in a third portion 503 of the substrate 10, which may be located between the first portion 101 and the second portion 102 of the substrate 10. As shown, the subset of the deposited layer 130 that partially overlaps with a subset of the NIC 110 may be in physical contact with its exposed layer surface 11. In some non-limiting examples, the overlap in the third region 3130 may be formed due to lateral growth of the deposited layer 130 during open-mask and / or mask-free deposition processes. In some non-limiting examples, the exposed layer surface 11 of the NIC 110 may exhibit a relatively low affinity or initial adhesion probability S0 for the deposition of the deposited material 331, and therefore, as the thickness of the deposited layer 130 grows, the probability of the material nucleating on the exposed layer surface 11 decreases; however, the deposited layer 130 may also grow laterally and cover a subset of the NIC 110.

[0269] In the cases shown in Figures 5H to 5I, the contact angle θ of the sedimentary layer 130. c As shown, it can be measured at its edge near the interface between it and NIC110. In Figure 5I, the contact angle θ c This can exceed approximately 90°, thereby, in some non-limiting examples, obtaining a subset of the sedimentary layer 130 separated from NIC 110 by the gap 529.

[0270] particle As can be shown in Figure 4C, in some non-limiting examples, on the exposed layer surface 11 of the base layer There may be at least one particle (collectively referred to as particle structure 441) disposed on the surface, including but not limited to nanoparticles (NPs), islands, plates, isolated clusters, and / or networks. In some non-limiting examples, the base layer may be the NIC 110 in the first portion 101. In some non-limiting examples, at least one particle structure 441 may be disposed on the exposed layer surface 11 of the NIC 110. In some non-limiting examples, there may be multiple such particle structures 441.

[0271] In some non-limiting examples, at least one particle structure 441 may include a particle structure material. In some non-limiting examples, the particle structure material may be the same as the sedimentary material 331 in the sedimentary layer.

[0272] In some non-limiting examples, the material that may constitute the particulate structure material in the discontinuous layer 440 in the first portion 101, the sedimentary material 331 in the sedimentary layer 130, and / or the underlying base layer therebetween may include a common metal.

[0273] In some non-limiting examples, the particle structure material may contain elements selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the elements may contain K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the elements may contain Cu, Ag, or Au. In some non-limiting examples, the elements may be Cu. In some non-limiting examples, the elements may be Al. In some non-limiting examples, the elements may contain Mg, Zn, Cd, or Yb. In some non-limiting examples, the elements may contain Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the elements may contain Mg, Ag, or Yb. In some non-limiting examples, the elements may contain Mg or Ag. In some non-limiting examples, the elements may be Ag.

[0274] In some non-limiting examples, the particulate material may contain pure metal. In some non-limiting examples, at least one particulate structure 441 may be pure metal. In some non-limiting examples, at least one particulate structure 441 may be pure Ag or substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one particulate structure 441 may be pure Mg or substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0275] In some non-limiting examples, at least one particle structure 441 may include an alloy. In some non-limiting examples, the alloy may be an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that can range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0276] In some non-limiting examples, the particulate material may include other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the particulate material may include alloys of Ag with at least one other metal. In some non-limiting examples, the particulate material may include alloys of Ag with Mg or Yb. In some non-limiting examples, such alloys may be binary alloys having a composition of about 5–95 volume percent Ag and the remainder being other metals. In some non-limiting examples, the particulate material may include Ag and Mg. In some non-limiting examples, the particulate material may include Ag:Mg alloys having a composition of about 1:10–10:1 by volume. In some non-limiting examples, the particulate material may include Ag and Yb. In some non-limiting examples, the particulate material may have a composition of about 1:20–1 by volume. It may include a Yb:Ag alloy having a 0:1 composition. In some non-limiting examples, the particle structure material may include Mg and Yb. In some non-limiting examples, the particle structure material may include a Mg:Yb alloy. In some non-limiting examples, the particle structure material may include an Ag:Mg:Yb alloy.

[0277] In some non-limiting examples, at least one particle structure 441 may contain at least one additional element. In some non-limiting examples, such additional element may be a nonmetallic element. In some non-limiting examples, the nonmetallic material may be O, S, N, and / or C. In some non-limiting examples, it will be understood by those skilled in the art that such additional elements may be incorporated into at least one particle structure 441 as contaminants by the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such additional elements may form compounds with other elements of at least one particle structure 441. In some non-limiting examples, the concentration of nonmetallic elements in the deposited material 331 may be about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or less than 0.0000001%. In some non-limiting examples, at least one particle structure 441 may have a composition in which the total amount of O and C therein is about 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, or less than 0.0000001%.

[0278] In some non-limiting examples, the presence of at least one particle structure 441, including but not limited to NPs, in the discontinuous layer 440 on the exposed layer surface 11 of the NIC 110 may affect some optical properties of the device 400.

[0279] In some non-limiting examples, such multiple particle structures 441 may form a discontinuous layer 440.

[0280] While we do not wish to be limited to any particular theory, the formation of a closed coating 140 of the deposited material 331 can be substantially suppressed on the NIC 110, but in some non-limiting examples, if the NIC 110 is exposed to the deposition of the deposited material 331 on it, some vapor monomers 332 of the deposited material 331 may eventually form at least one particulate structure 441 of the deposited material 331 on it.

[0281] In some non-limiting examples, at least some of the particle structures 441 can be separated from one another. In other words, in some non-limiting examples, the discontinuous layer 440 may include feature portions containing particle structures 441 that can be physically separated from one another so as not to form a closed coating 140. Thus, in some non-limiting examples, such a discontinuous layer 440 may include a thin dispersed layer of deposited material 331, formed as particle structures 441, inserted at the interface between the NIC 110 and at least one coating layer in the device 100, and substantially over its lateral range.

[0282] In some non-limiting examples, at least one of the particle structures 441 of the deposited material 331 may be in physical contact with the exposed layer surface 11 of the NIC 110. In some non-limiting examples, substantially all of the particle structures 441 of the deposited material 331 may be in physical contact with the exposed layer surface 11 of the NIC 110.

[0283] While we do not wish to be bound by any particular theory, it is somewhat surprising that such a thin dispersed discontinuous layer 440 of a deposited material 331, which includes but is not limited to a metallic particle structure 441, contains at least one particle structure 441, and is N When present on the exposed layer surface 11 of IC110, it has been found that it can exhibit at least one variety of properties and associated behaviors, including, but not limited to, the optical effects and properties of device 100 as discussed herein. In some non-limiting examples, such effects and properties can be controlled to some extent by precisely selecting the characteristic size S1, size distribution, shape, surface coverage C1, composition, deposition density, and / or dispersion degree D of the particle structure 441 on NIC110.

[0284] In some non-limiting examples, the formation of at least one of the characteristic size S1, size distribution, shape, surface coverage C1, composition, deposition density, and / or degree of dispersion D of such discontinuous layer 440 can be controlled in some non-limiting examples by appropriately selecting at least one of the deposition environments, including but not limited to, the temperature, pressure, duration, deposition rate, and / or deposition process of the NIC material, which is at least one property of the NIC material.

[0285] In some non-limiting examples, the formation of at least one of the characteristic size S1, size distribution, shape, surface coverage C1, composition, deposition density, and / or degree of dispersion D of such discontinuous layer 440 can be controlled in some non-limiting examples by appropriately selecting at least one of the deposition environment, including, but not limited to, the temperature, pressure, duration, deposition rate, and / or deposition method of the particle structure material (which may be the deposition material 331), the extent to which NIC 110 can be exposed to deposition of the particle structure material (which may be specified in some non-limiting examples with respect to the thickness of the corresponding discontinuous layer 440), and / or the temperature, pressure, duration, deposition rate, and / or deposition method of the particle structure material.

[0286] In some non-limiting examples, the discontinuous layer 440 may be deposited in a pattern over a lateral range of NIC 110.

[0287] In some non-limiting examples, the discontinuous layer 440 may be arranged in a pattern that can be defined by at least one region thereof substantially lacking at least one particle structure 441.

[0288] In some non-limiting examples, the properties of such discontinuous layers 440 may be evaluated somewhat arbitrarily according to at least one of several criteria, including, but not limited to, the characteristic size S1, size distribution, shape, composition, surface coverage C, deposition distribution, dispersion degree D, and / or the presence and / or degree of aggregated instances of the particle structure material formed on a portion of the exposed layer surface 11 of the base layer.

[0289] In some non-limiting examples, the evaluation of the discontinuity layer 440 by at least one criterion may be carried out by measuring and / or calculating at least one attribute of the discontinuity layer 440 using a variety of imaging techniques, including but not limited to transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM).

[0290] Those skilled in the art will understand that such evaluation of the discontinuity layer 440 may depend, to a greater or lesser extent, on the extent of the exposed layer surface 11 under consideration, which in some non-limiting examples may include area and / or region thereof. In some non-limiting examples, the discontinuity layer 440 may be evaluated over the entire extent of the exposed layer surface 11, on a first lateral surface and / or a second lateral surface substantially transverse thereto. In some non-limiting examples, the discontinuity layer 440 may be evaluated over an extent including at least one observation window applied to (part of) the discontinuity layer 440.

[0291] In some non-limiting examples, at least one observation window may be located around the lateral surface of the exposed layer surface 11, at an internal position, and / or in grid coordinates. In some non-limiting examples, multiple at least one observation windows may be used when evaluating the discontinuous layer 440.

[0292] In some non-limiting examples, the observation window may correspond to the field of view of imaging techniques applied to evaluate the discontinuity layer 440, including but not limited to TEM, AFM, and / or SEM. In some non-limiting examples, the observation window may correspond to a given level of magnification, including but not limited to 2.00 μm, 1.00 μm, 500 nm, or 200 nm.

[0293] In some non-limiting examples, the evaluation of the discontinuous layer 440 may include, but is not limited to, at least one observation window used on the exposed layer surface 11, and may include calculation and / or measurement by any number of mechanisms, but is not limited to, manual counting and / or known estimation techniques, which may in some non-limiting examples include curve, polygon and / or shape fitting techniques.

[0294] In some non-limiting examples, the evaluation of the discontinuous layer 440, including but not limited to at least one observation window used on its exposed layer surface 11, may include the calculation and / or measurement of mean, median, mode, maximum, and minimum values, and / or other probabilistic, statistical, and / or data manipulation of the calculated and / or measured values.

[0295] In some non-limiting examples, one of at least one criteria that can evaluate such discontinuous layer 440 may be the surface coverage C1 of the deposited material 331 on (part of) such discontinuous layer 440. In some non-limiting examples, the surface coverage C1 may be expressed by the (non-zero) percentage coverage of (part of) such discontinuous layer 440 by such deposited material 331. In some non-limiting examples, the percentage coverage may be compared to a maximum threshold percentage coverage.

[0296] In some non-limiting examples, a portion of the discontinuous layer 440 having a surface coverage C1 that may be substantially below the maximum threshold percentage coverage may result in the manifestation of different optical properties that can be conferred by such portion of the discontinuous layer 440 to photons passing through the device 100, whether they are fully transmitted through and / or emitted therefrom, compared to photons passing through a portion of the discontinuous layer 440 having a surface coverage C1 that substantially exceeds the maximum threshold percentage coverage.

[0297] In some non-limiting examples, conductive materials, including but not limited to metals such as Ag, Mg, or Yb, attenuate and / or absorb photons; therefore, in some non-limiting examples, one measure of the surface coverage C1 of a certain amount of conductive material on a surface may be (light) transmittance.

[0298] Those skilled in the art will understand that in some non-limiting examples, surface coverage C1 encompasses one or both of particle size and deposition density. Thus, in some non-limiting examples, several of these three criteria may be favorably correlated. In fact, in some non-limiting examples, the criterion for low surface coverage C1 may include some combination of the criterion for low deposition density and the criterion for small particle size.

[0299] In some non-limiting examples, one of at least one criteria that can be used to evaluate such discontinuous layers 440 may be the characteristic size S1 of the constituent particle structure 441.

[0300] In some non-limiting examples, at least one particle structure 441 of the discontinuous layer 440 may have a feature size S1 less than or equal to the maximum threshold size. Non-limiting examples of feature size S1 may include height, width, length, and / or diameter.

[0301] In some non-limiting examples, substantially all of the particle structures 441 of the discontinuous layer 440 may have a feature size S1 within a specified range.

[0302] In some non-restrictive examples, such feature size S1 may be characterized by feature length, which in some non-restrictive examples can be considered the maximum value of feature size S1. In some non-restrictive examples, such maximum value may extend along the major axis of the particle structure 441. In some non-restrictive examples, the major axis may be understood as a first dimension extending in a plane defined by multiple transverse axes. In some non-restrictive examples, feature width may be identified as a value of feature size S1 of the particle structure 441 that may extend along the minor axis of the particle structure 441. In some non-restrictive examples, the minor axis may be understood as a second dimension extending in the same plane but substantially transverse to the major axis.

[0303] In some non-limiting examples, the feature length of at least one particle structure 441 along the first dimension may be less than the maximum threshold size.

[0304] In some non-limiting examples, the feature width of at least one particle structure 441 along the second dimension may be less than the maximum threshold size.

[0305] In some non-limiting examples, the size of a constituent particle structure 441 in a discontinuous layer 440 (or part thereof) can be assessed by calculating and / or measuring a characteristic size S1 of at least one such particle structure 441, which includes, but is not limited to, the mass, volume, diameter length, circumference, major axis, and / or minor axis.

[0306] In some non-limiting examples, at least one criterion that can be used to evaluate such discontinuous layers 440 may be its sedimentary density.

[0307] In some non-restrictive examples, the feature size S1 of particle structure 441 can be compared to the maximum threshold size.

[0308] In some non-limiting examples, the deposition density of particle structure 441 can be compared to the maximum threshold deposition density.

[0309] In some non-limiting examples, at least one of such criteria can be quantified by a numerical metric. In some non-limiting examples, such a metric could be the calculation of the degree of dispersion D, which represents the distribution of particle (area) size in a sedimentary layer 320 of particles 60:

number

number

number

number

[0310] Those skilled in the art will understand that the degree of dispersion D is roughly analogous to the polydispersity index (PDI), and that their averages are roughly analogous to the concepts of number-average molecular weight and weight-average molecular weight, which are well known in organic chemistry, but are applied to (area) size in contrast to the molecular weight of sample particles 60.

[0311] Those skilled in the art will understand that while the concept of dispersion D may be considered a three-dimensional volume concept in some non-limiting examples, it may also be considered a two-dimensional concept in some non-limiting examples. Therefore, the concept of dispersion D may be used in relation to observing and analyzing two-dimensional images of the sedimentary layer 320, such as those obtained by using various imaging techniques including, but not limited to, TEM, AFM, and / or SEM. In such a two-dimensional context, the equations stated above are defined.

[0312] In some non-restrictive examples, the degree of dispersion D, and / or the number mean of particle (area) size and the (area) size mean of particle (area) size, may include the calculation of at least one of the number mean of particle diameter and the (area) size mean of particle diameter:

number

[0313] In some non-limiting examples, the deposited material may include, but is not limited to, a particle structure 61 of at least one deposit layer 320, and may be deposited by mask-free and / or open-mask deposition processes.

[0314] In some non-limiting examples, the particle structure 441 may have a substantially round shape.

[0315] For the purpose of simplification, in some non-limiting examples, the longitudinal extent of each particle structure 441 may be substantially the same (in any case, it can be measured directly from a planar SEM image), and thus it can be assumed that the (area) size of the particle structure 441 can be expressed as a two-dimensional area coverage along a pair of transverse axes. In this disclosure, references to (area) size should be understood to refer to such a two-dimensional concept and to be distinguished from size (without the prefix "area") which can be understood to refer to a one-dimensional concept such as line dimension.

[0316] In fact, some early studies suggest that in some non-limiting cases, the vertical range along the y-axis of such particle structures 441 may tend to be smaller than the horizontal range (along at least one of the horizontal axes), thereby the volume contribution of the vertical range may be much smaller than the volume contribution of the horizontal range. In some non-limiting cases, this can be expressed by an aspect ratio (the ratio of the vertical range to the horizontal range), which may be less than 1. In some non-limiting cases, such an aspect ratio may be approximately 1:10, 1:20, 1:50, 1:75, or 1:300.

[0317] In this regard, the particle structure 441 is described above as being expressed as a two-dimensional area coverage ratio. The assumption that the vertical range is essentially the same and negligible may be appropriate.

[0318] Those skilled in the art will understand that, considering the non-deterministic nature of the deposition process when defects and / or anomalies are particularly present on the exposed layer surface 11 of the base material, including but not limited to step edges, chemical impurities, bonding sites, twists and / or contaminants, and the resulting formation of particle structures 441 thereon, and the non-uniform nature of their coalescence as the deposition process continues, and given the uncertainty of the size and / or location of the observation windows, and the inherent complexity and variability in the calculation and / or measurement of their characteristic sizes S1, there can be considerable variability with respect to the characteristic parts and / or topology within the observation windows, in terms of spacing, deposition density, cohesion, etc.

[0319] For the sake of simplicity of illustration, certain details of the deposited material 531, including but not limited to the layer thickness profile and / or edge profile, are omitted in this disclosure.

[0320] Those skilled in the art will understand that certain metallic NPs, whether or not they are part of a discontinuous layer 440 of a deposited material 331 comprising, but not limited to, at least one particle structure 441, may exhibit surface plasmon (SP) excitation and / or coherent vibrations of free electrons, and as a result, such NPs may absorb and / or scatter light in the range of the EM spectrum, which includes, but is not limited to, the visible light spectrum and / or a subrange thereof. The optical response, which includes, but is not limited to, the (sub)range of the EM spectrum (absorption spectrum) in which absorption can be concentrated, refractive index n, and / or the extinction spectrum k of such localized SP (LSP) excitation and / or coherent vibrations, can be tuned by changing the properties of such NPs, which include, but is not limited to, the characteristic size S1, size distribution, shape, surface coverage C1, composition, deposition density, dispersion D, and / or the material and / or cohesion of the nanostructure and / or the medium adjacent thereto.

[0321] Such optical responses to photon-absorbing coatings may involve absorbing incident photons and thereby reducing reflections. In some non-limiting examples, absorption may be concentrated in the EM spectrum, which includes but is not limited to the visible light spectrum and / or a sub-spectrum therein. In some non-limiting examples, the reliance on polarizers in an optoelectronic device can be reduced by employing a photon-absorbing layer as part of the optoelectronic device.

[0322] Fusella et al., “Plasmonic enhancement of stability and brightness in organic light-emitting devices”, Nature 2020, 585, 379-382 ("Fusella et al.") reported that the stability of light-emitting diode (OLED) devices can be enhanced by incorporating an NP-based outcoupling layer above the cathode layer to extract energy from plasmon modes. The NP-based outcoupling layer was fabricated by spin-casting cubic AgNPs above the organic layer above the cathode. However, since most commercial OLED devices are fabricated using vacuum-based processes, spin-casting from solution may not constitute a suitable mechanism for forming such an NP-based outcoupling layer above the cathode.

[0323] It was discovered that such NP-based outcoupling layers above a cathode can be fabricated in a vacuum (and therefore may be suitable for use in commercial OLED manufacturing processes) by depositing the metal deposition material 331 of the discontinuous layer 440 onto a NIC 110 which may be a cathode and / or deposited on it in some non-limiting examples. Such a process can avoid the use of solvents or other wetting chemicals that could damage OLED devices and / or adversely affect the reliability of the devices.

[0324] In some non-limiting examples, the presence of such discontinuous layers 440 in the deposited material 331, including but not limited to at least one particle structure 441, may contribute to improvements in the optical extraction, performance, stability, reliability, and / or lifetime of the device.

[0325] In some non-limiting examples, in a layered device 100, if at least one discontinuous layer 440 is present on and / or adjacent to the exposed layer surface 11 of the NIC 110, and / or adjacent to the interface of such NIC 110 with at least one coating layer in some non-limiting examples, an optical effect can be imparted to photons and / or EM signals emitted by and / or transmitted through the device.

[0326] Those skilled in the art will understand that while a simplified model of the optical effect is presented herein, other models and / or descriptions may be applicable.

[0327] In some non-limiting examples, the presence of such discontinuous layers 440 of the deposited material 331, including but not limited to at least one particle structure 441, reduces and / or mitigates the crystallization of adjacent thin film layers and / or coatings on the longitudinal side, including but not limited to the NIC 110 and / or at least one coating layer, thereby stabilizing the properties of the adjacent thin film, and in some non-limiting examples, reducing scattering. In some non-limiting examples, such thin films may be and / or include at least one layer of outcoupling and / or encapsulating coatings of a device, including but not limited to a capping layer (CPL).

[0328] In some non-limiting examples, the presence of such discontinuous layers 440 of the deposited material 331, including but not limited to at least one particle structure 441, can provide enhanced absorption in at least a portion of the UV spectrum. In some non-limiting examples, by controlling the features of such particle structure 441, including but not limited to size S1, size distribution, shape, surface coverage C1, composition, deposition density, dispersion D, deposited material 331, and refractive index n, the absorbance, wavelength range, and peak wavelength λ of the absorption spectrum, including the UV spectrum, can be controlled. maxThis can make control easier. Enhanced light absorption in at least a portion of the UV spectrum may be advantageous, for example, to improve the performance, stability, reliability, and / or lifespan of the device.

[0329] In some non-limiting examples, optical effects can be described in terms of their influence on the transmission and / or absorption wavelength spectra, including the wavelength range and / or peak intensity.

[0330] Additionally, while the presented model may suggest certain effects that are imparted to the transmission and / or absorption of photons passing through such discontinuous layers 440, in some non-limiting examples, such effects may reflect local effects that are not reflected on a broader observable basis.

[0331] In some non-limiting examples, NIC110 may be doped, coated, and / or supplemented with another material that may act as a seed or heterogene to act as such a nucleation site for the deposited material 331. In some non-limiting examples, such other material may include nucleation-promoting coating (NPC) 520 (Figure 5C) material. In some non-limiting examples, such other material may include, as non-limiting examples, organic materials, e.g., polycyclic aromatic compounds, and / or materials containing nonmetallic elements such as oxygen (O), sulfur (S), nitrogen (N), or carbon (C), which are typically used in the source material, deposition. It can become a contaminant in the equipment used and / or in the vacuum chamber environment. In some non-limiting examples, such other materials may be deposited in layers that are monolayer fractions to avoid forming their closed coating 140. Rather, the monomers of such other materials will tend to be spaced apart on the lateral surfaces to form individual nucleation sites for the deposited material, thereby forming particles.

[0332] Optoelectronic devices Figure 6 is a simplified block diagram from a cross-sectional side view of an example of an electroluminescent device 600 according to the present disclosure. In some non-limiting examples, the device 600 is an OLED.

[0333] The device 600 may include a substrate 10 on which a front plane 610 is disposed, each comprising a first electrode 620, at least one semiconducting layer 630, and a second electrode 640, which are multiple layers. In some non-limiting examples, the front plane 610 may provide a mechanism for photon emission and / or manipulation of emitted photons.

[0334] In some non-limiting examples, the deposited layer 130 and the base surface together may form at least a portion of at least one of the first electrode 620 and the second electrode 640 of the device 600. In some non-limiting examples, the deposited layer 130 and the base layer beneath it together may form at least a portion of the cathode of the device 600.

[0335] In some non-limiting examples, device 600 may be electrically coupled to power supply 605. When so coupled, device 600 may emit photons as described herein.

[0336] substrate In some examples, the substrate 10 may include a base substrate 612. In some examples, the base substrate 612 may be formed from materials suitable for its use, including but not limited to silicon (Si), glass, metals (including but not limited to metal foils), sapphire, and / or other inorganic materials, and / or organic materials including but not limited to polymers, including but not limited to polyimide and / or silicon-based polymers. In some examples, the base substrate 612 may be rigid or flexible. In some examples, the substrate 10 may be defined by at least one plane. In some non-limiting examples, the substrate 10 may have at least one surface supporting the remaining front plane 610 components of the device 600, including but not limited to a first electrode 620, at least one semiconducting layer 630, and / or a second electrode 640.

[0337] In some non-limiting examples, such surfaces may be organic and / or inorganic surfaces.

[0338] In some examples, the substrate 10 may include, in addition to the base substrate 612, at least one additional organic and / or inorganic layer (not shown or specifically described herein) supported on the exposed layer surface 11 of the base substrate 612.

[0339] In some non-limiting examples, such additional layers may include and / or form at least one organic layer, which may include, replace, and / or supplement at least one of the at least one semiconducting layer 630.

[0340] In some non-limiting examples, such additional layers include at least one inorganic layer. These may include and / or form at least one electrode, which may, in some non-limiting examples, include, replace, and / or supplement a first electrode 620 and / or a second electrode 640.

[0341] In some non-limiting examples, such additional layers may include, and / or be formed from, the backplane layer 615. In some non-limiting examples, the backplane layer 615 may include, but not limited to, an electronic TFT structure 701 (Figure 7) and / or its components, which may not be provided under the introduction of a low-pressure environment (including, but not limited to, a vacuum) and / or may be formed by a photolithography process that may precede such introduction, power circuits and / or switching elements for driving the device 600.

[0342] The backplane and TFT structure embodied within it In some non-limiting examples, the backplane 1015 of the substrate 10 may include, but not limited to, at least one electronic and / or optoelectronic component, such as transistors, resistors, and / or capacitors, that can support a device 600 acting as an active matrix and / or passive matrix device. In some non-limiting examples, such a structure may be a thin-film transistor (TFT) structure 701.

[0343] Non-limiting examples of TFT structure 701 include top-gate, bottom-gate, n-type and / or p-type TFT structures 701. In some non-limiting examples, TFT structure 701 may incorporate at least one of amorphous Si (a-Si), indium gallium zinc (Zn) oxide (IGZO), and / or low-temperature polycrystalline Si (LTPS).

[0344] First electrode The first electrode 620 may be deposited on top of the substrate 10. In some non-limiting examples, the first electrode 620 may be electrically coupled to the terminals of the power supply 605 and / or to ground. In some non-limiting examples, the first electrode 620 may be coupled in this way through at least one drive circuit which may incorporate at least one TFT structure 701 in the backplane 1015 of the substrate 10.

[0345] In some non-limiting examples, the first electrode 620 may include an anode and / or cathode.

[0346] In some non-limiting examples, the first electrode 620 may be formed by depositing at least one conductive thin film on top of (a portion of) the substrate 10. In some non-limiting examples, there may be a plurality of first electrodes 620 arranged in spatial arrangement on top of the lateral surface of the substrate 10. In some non-limiting examples, at least one of such at least one first electrode 620 may be deposited on top of (a portion of) the TFT insulating layer 709 (Figure 7) arranged in spatial arrangement on the lateral surface. If so, in some non-limiting examples, at least one of such at least one first electrode 620 may extend through an opening in the corresponding TFT insulating layer 709 and be electrically coupled to an electrode of the TFT structure 701 in the backplane 1015.

[0347] In some non-limiting examples, at least one first electrode 620 and / or at least one thin film thereof may include, but not be limited to, at least one metallic material including, but not limited to, Mg, Al, calcium (Ca), Zn, Ag, Cd, Ba, or Yb, or any combination thereof of alloys containing any of such materials, ternary compositions such as fluorinated tin oxide (FTO), indium zinc oxide (IZO), or indium tin oxide (ITO). The material may include, but is not limited to, at least one metal oxide, or any combination thereof, or any combination thereof in various ratios, or in at least one layer, or any combination thereof, which may be a thin film, including but not limited to transparent conductive oxides (TCOs).

[0348] Second electrode The second electrode 640 may be deposited on top of at least one semiconducting layer 630. In some non-limiting examples, the second electrode 640 may be electrically coupled to the terminals of the power supply 605 and / or to ground. In some non-limiting examples, the second electrode 640 may be coupled through at least one drive circuit which may incorporate at least one TFT structure 701 in the backplane 1015 of the substrate 10.

[0349] In some non-limiting examples, the second electrode 640 may include an anode and / or cathode. In some non-limiting examples, the second electrode 1030 may be a cathode.

[0350] In some non-limiting examples, the second electrode 640 may be formed by depositing the deposition layer 130 as at least one thin film on top of (part of) at least one semiconducting layer 630. In some non-limiting examples, there may be a plurality of second electrodes 640 arranged in a spatial arrangement on top of the lateral surface of at least one semiconducting layer 630.

[0351] In some non-limiting examples, at least one second electrode 640 may include, but is not limited to, at least one metallic material including, but not limited to, Mg, Al, Ca, Zn, Ag, Cd, Ba, or Yb, or alloys containing any of such materials, or any multiple combination thereof, at least one metal oxide including, but not limited to, ternary compositions such as FTO, IZO, or ITO, or TCO, or any multiple combination thereof, or in various ratios, or zinc oxide (ZnO), or other oxides containing indium (In) or Zn, or any multiple combination thereof in at least one layer, and / or at least one non-metallic material, which may be a conductive thin film. In some non-limiting examples, for Mg:Ag alloys, the composition of such alloys may range from about 1:9 to 9:1 by volume.

[0352] In some non-limiting examples, the deposition of the second electrode 640 may be carried out using open-mask and / or mask-free deposition processes.

[0353] In some non-limiting examples, the second electrode 640 may include a plurality of such layers and / or coatings. In some non-limiting examples, such layers and / or coatings may be separate layers and / or coatings arranged on top of each other.

[0354] In some non-limiting examples, the second electrode 640 may include a Yb / Ag bilayer coating. In some non-limiting examples, such a bilayer coating may be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of such an Ag coating may exceed the thickness of the Yb coating.

[0355] In some non-limiting examples, the second electrode 640 may be a multilayer electrode 640 comprising at least one metal layer and / or at least one oxide layer.

[0356] In some non-limiting examples, the second electrode 640 may contain fullerene and Mg.

[0357] As a non-limiting example, such coatings may be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, fullerenes may be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in U.S. Patent Application Publication No. 2015 / 0287846 (published on 8 October 2015) and / or PCT International Application No. PCT / IB2017 / 054970 (filed on 15 August 2017, published as WO2018 / 033860 on 22 February 2018).

[0358] semiconductive layer In some non-limiting examples, at least one semiconducting layer 630 may comprise a plurality of layers 631, 633, 635, 637, 639, any of which may, in some non-limiting examples, comprise one or more of the following: a hole injection layer (HIL) 631, a hole transport layer (HTL) 633, an emission layer (EML) 635, an electron transport layer (ETL) 637, and / or an electron injection layer (EIL) 639, and be arranged within a thin film in a laminated configuration.

[0359] In some non-limiting examples, at least one semiconducting layer 630 may form a “tandem” structure comprising multiple EMLs 635. In some non-limiting examples, such a tandem structure may also include at least one charge-generating layer (CGL).

[0360] Those skilled in the art will readily understand that the structure of device 600 can be modified by omitting and / or combining at least one of the semiconducting layers 631, 633, 635, 637, and 639.

[0361] Furthermore, any of layers 631, 633, 635, 637, and 639 of at least one semiconducting layer 630 may contain any number of sublayers. Also, any of such layers 631, 633, 635, 637, and 639, and / or their sublayers, may contain various mixtures and / or compositional gradients. In addition, those skilled in the art will understand that the device 600 may include one or more layers containing inorganic and / or organometallic materials, and / or is not necessarily limited to a device composed solely of organic materials. As a non-limiting example, the device 600 may include at least one QD.

[0362] In some non-limiting examples, HIL631 may be formed using a hole injection material that facilitates the injection of holes by the anode.

[0363] In some non-limiting cases, HTL633 may be formed using a hole transport material that can exhibit high hole mobility.

[0364] In some non-limiting cases, ETL637 may be formed using electron transport materials that can exhibit high electron mobility.

[0365] In some non-limiting examples, EIL639 may be formed using electron injection materials that facilitate electron injection by the cathode.

[0366] In some non-limiting examples, EML635 may be formed by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be a fluorescent emitter, a phosphorescent emitter, a thermally activated delayed fluorescence (TADF) emitter, and / or any combination of several of these.

[0367] In some non-limiting examples, device 600 could be an OLED in which at least one semiconducting layer 630 includes at least one EML 635 sandwiched between conductive thin-film electrodes 620, 640, so that when a potential difference is applied across them, holes may be injected into at least one semiconducting layer 630 through the anode, electrons may be injected into at least one semiconducting layer 630 through the cathode, move toward the EML 635, couple, and emit EM radiation in the form of photons.

[0368] In some non-limiting examples, device 600 may be an electroluminescent QD device, which may include an active layer comprising at least one semiconducting layer 630 containing at least one QD. When current can be supplied to the first electrode 620 and the second electrode 640 by the power supply 605, photons may be emitted from the active layer comprising at least one semiconducting layer 630 between them.

[0369] Those skilled in the art will readily understand that the structure of device 600 can be modified by introducing at least one additional layer (not shown) at appropriate locations within the laminate of at least one semiconducting layer 630, which includes, but is not limited to, a hole-blocking layer (not shown), an electron-blocking layer (not shown), an additional charge-transporting layer (not shown), and / or an additional charge-injecting layer (not shown).

[0370] In some non-limiting examples, including cases where the OLED device 600 includes an illumination panel, the entire lateral surface of the device 600 may correspond to a single illumination element. Thus, the substantially flat cross-sectional profile shown in Figure 6 may extend substantially along the entire lateral surface of the device 600, such that photons are emitted from the device 600 substantially along its entire lateral range. In some non-limiting examples, such a single illumination element may be driven by a single drive circuit of the device 600.

[0371] In some non-limiting examples, including cases where the OLED device 600 includes a display module, the lateral surface of the device 600 may be subdivided into multiple emission regions 1210 (Figure 12), where, as shown in Figure 6 but not limited thereto, the cross-sectional side surface of the device structure 1000 within each emission region may emit photons when energy is applied.

[0372] emission area In some non-limiting examples, such as those shown in Figure 7, the active region 730 of the emission region 1210 may be defined such that it is laterally bounded by the first electrode 620 and the second electrode 640 and laterally confined within the emission region 1210 defined by the first electrode 620 and the second electrode 640. Those skilled in the art will understand that the lateral range of the emission region 1210, and therefore the lateral boundary of the active region 730, may not correspond to the entire lateral surface of one or both of the first and second electrodes 620 and the second electrode 640. Rather, the lateral range of the emission region may be less than the lateral range of one of the first and second electrodes 620 and the second electrode 640. As a non-limiting example, a portion of the first electrode 620 may be covered by a pixel-defining layer (PDL) 740 (Figure 7), and / or a portion of the second electrode 640 may not be disposed on at least one semiconducting layer 630, and as a result, in one or both of these situations, the emission region 1210 may be constrained laterally.

[0373] In some non-limiting examples, the individual emission regions 1210 of the device 600 may be arranged in a transverse pattern. In some non-limiting examples, the pattern may extend along a first transverse direction. In some non-limiting examples, the pattern may also extend along a second transverse direction, which in some non-limiting examples may be substantially perpendicular to the first transverse direction. In some non-limiting examples, a pattern may have many elements within such a pattern, each element being characterized by one or more features including, but not limited to, the wavelength of light emitted by its emission region 1210, the shape of such emission region 1210, dimensions (along one or both of the first and / or second transverse directions), orientation (with respect to one or both of the first and / or second transverse directions), and / or spacing from previous elements in the pattern (with respect to one or both of the first and / or second transverse directions). In some non-limiting examples, a pattern may be repeated in one or both of the first and / or second transverse directions.

[0374] In some non-limiting examples, each individual emission region 1210 of device 600 may be associated with and driven by a corresponding drive circuit in the backplane 1015 of device 600 to drive the OLED structure of the associated emission region 1210. In some non-limiting examples, including but not limited to cases where the emission regions 1210 may be arranged in a regular pattern extending in both a first (row) transverse direction and a second (column) transverse direction, there may be signal lines in the backplane 1015 corresponding to each row of emission regions 1210 extending in the first transverse direction, and signal lines corresponding to each column of emission regions 1210 extending in the second transverse direction. In such an unrestricted configuration, a signal on a row selection line can energize the gate of each switching TFT electrically coupled to it, and a signal on a data line can energize the source of each switching TFT electrically coupled to it, thereby the signals on row selection line / data line pairs can be electrically coupled by the positive terminal of power supply 605 to the anode of the OLED structure of the emission region 1210 associated with such a pair, thereby energizing it, and causing the emission of photons therefrom, whose cathodes are electrically coupled to the negative terminal of power supply 605.

[0375] In some non-limiting examples, each emitting region 1210 of device 600 may correspond to a single display pixel 1810 (Figure 18A). In some non-limiting examples, each pixel 1810 may emit light in a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum may correspond to colors in the visible spectrum without limitation.

[0376] In some non-limiting examples, each emission region 1210 of device 600 may correspond to a subpixel 134x of a display pixel 1810 (Figure 13A). In some non-limiting examples, multiple subpixels 134x may combine to form or represent a single display pixel 1810.

[0377] In some non-limiting examples, a single display pixel 1810 may be represented by three subpixels 134x. In some non-limiting examples, the three subpixels 134x may be represented as R (red) subpixel 1341, G (green) subpixel 1342, and / or B (blue) subpixel 1343, respectively. In some non-limiting examples, a single display pixel 1810 may be represented by four subpixels 134x, where three of such subpixels 134x may be represented as R, G, and B subpixels 134x, and the fourth subpixel 134x may be represented as W (white) subpixel 134x. In some non-limiting examples, the emission spectrum of light emitted by a given subpixel 134x may correspond to the color representing the subpixel 134x. In some non-limiting examples, the wavelength of light may not correspond to such a color, but further processing can be carried out in a manner obvious to those skilled in the art to convert the wavelength to such a corresponding wavelength.

[0378] Since the wavelengths of subpixels 134x of different colors may be different, the optical properties of such subpixels 134x are, in particular, that of a common electrode with a substantially uniform thickness profile. If 620 and 640 can be used for 134x subpixels of different colors, then they may be different.

[0379] If common electrodes 620, 640 having substantially uniform thickness can be provided as the second electrode 640 of device 600, it would not be easy to fine-tune the optical performance of device 600 according to the emission spectrum associated with each (sub)pixel 1810 / 134x. In some non-limiting examples, the second electrode 640 used in such an OLED device 600 may be common electrodes 620, 640 covering multiple (sub)pixels 1810 / 134x. In some non-limiting examples, such common electrodes 620, 640 may be relatively thin conductive films having substantially uniform thickness throughout device 600. Efforts have been made in some non-limiting examples to tune the optical microcavity effect associated with the color of each (sub)pixel 1810 / 134x by varying the thickness of the organic layer disposed within different (sub)pixels 1810 / 134x, and such approaches may, in some non-limiting examples, provide a significant degree of tuning of the optical microcavity effect, at least in some cases. In addition, in some non-specific cases, such approaches may be difficult to implement in the manufacturing environment of OLED displays.

[0380] As a result, the presence of optical interfaces fabricated by numerous thin film layers and coatings with different refractive indices, which may be used to construct optoelectronic devices including, but not limited to, OLED devices 600, can create different optical microcavity effects for subpixels 134x of different colors.

[0381] Several factors that may influence the observed microcavity effects in device 600 include, but are not limited to, the total path length (which, in some non-limiting examples, may correspond to the total thickness of device 600 through which photons emitted from there pass before being outcoupled), as well as the refractive index n of various layers and coatings.

[0382] In some non-limiting cases, adjusting the thickness of electrodes 620, 640 on and across the lateral side 710 of the emission region 1210 of (sub)pixel 1810 / 134x may affect the observable microcavity effect. In some non-limiting cases, such an effect may be due to a change in the total optical path length.

[0383] In some non-limiting examples, changes in the thickness of electrodes 620, 640 can also change the refractive index n of the light passing through them, in addition to changing the total optical path length. In some non-limiting examples, this may be the case, in particular, when electrodes 620, 640 can be formed in at least one deposition layer 130.

[0384] In some non-limiting examples, the optical properties of device 600, and / or in some non-limiting examples, that can be altered by adjusting at least one optical microcavity effect, include, but are not limited to, the angular distribution of emitted light, including, but not limited to, the emission spectrum, intensity (including, but not limited to, luminosity), and / or the angular dependence of the luminance and / or color shift of the emitted light.

[0385] In some non-restrictive examples, a subpixel 134x may be associated with a first set of other subpixels 134x to represent a first display pixel 1810, and may also be associated with a second set of other subpixels 134x to represent a second display pixel 1810, so that the first and second display pixels 340 can associate the same subpixels 134x with them.

[0386] The patterns and / or arrangements of subpixels 134x on display pixels 340 are constantly evolving. All current and future patterns and / or arrangements are considered to fall within the scope of this disclosure.

[0387] Non-emission area In some non-limiting examples, various emitting regions 1210 of device 600 are substantially surrounded and isolated in at least one lateral direction by at least one non-emitting region 1220 (Figure 12), where the structure and / or configuration along the cross-sectional side of the device structure 600, as shown in but not limited to Figure 6, can be modified to substantially suppress the photons emitted therefrom. In some non-limiting examples, the non-emitting regions 1220 may include these regions on the lateral side that substantially lack emitting regions 1210.

[0388] Therefore, as shown in the cross-sectional view of Figure 7, by changing the lateral topology of various layers of at least one semiconducting layer 630, it is possible to define at least one emission region 1210 surrounded (in at least one lateral direction) by at least one non-emission region 1220.

[0389] In some non-limiting examples, it can be understood that an emission region 1210 corresponding to a single display (sub)pixel 1810 / 134x has a lateral side 710 surrounded in at least one lateral direction by at least one non-emission region 1220 having a lateral side 720.

[0390] A non-limiting example of a cross-sectional side mounting of a device 600, such as one applied to an emission region 1210 corresponding to a single display (sub)pixel 1810 / 134x of an OLED display 600, is described here. While the features of such mountings are shown to be specific to the emission region 1210, those skilled in the art will understand that in some non-limiting examples, more than one emission region 1210 may encompass common features.

[0391] In some non-limiting examples, the first electrode 620 may be disposed on the exposed layer surface 11 of the device 600 within at least a portion of the lateral surface 710 of the emission region 1210. In some non-limiting examples, within at least the lateral surface 710 of the emission region 1210 for (sub)pixels 1810 / 134x, the exposed layer surface 11 may include a TFT insulating layer 709 of various TFT structures 701 that constitute a driving circuit for the emission region 1210 corresponding to a single display (sub)pixel 1810 / 134x when the first electrode 620 is deposited.

[0392] In some non-limiting examples, the TFT insulating layer 709 may be formed with openings extending therein, allowing the first electrode 620 to be electrically coupled to one of the TFT electrodes 705, 707, and 708, including but not limited to the TFT drain electrode 708, as shown in Figure 7.

[0393] Those skilled in the art will understand that the drive circuit includes multiple TFT structures 701. In Figure 7, for the sake of brevity of the illustration, only one TFT structure 701 may be shown, but those skilled in the art will understand that such a TFT structure 701 may be representative of multiple such TFT structures including the drive circuit.

[0394] In the cross-sectional side view, the configuration of each emission region 1210 can be defined in some non-limiting examples by introducing at least one PDL 740 over substantially the entire lateral side surface 720 of the surrounding non-emission region 1220. In some non-limiting examples, the PDL 740 may include an insulating organic material and / or an insulating inorganic material.

[0395] In some non-limiting examples, the PDL740 may be deposited substantially above the TFT insulating layer 709, but as shown, in some non-limiting examples, the PDL740 may also extend above the deposited first electrode 620 and / or at least a portion of its outer edge.

[0396] In some non-limiting examples, as shown in Figure 7, the cross-sectional thickness and / or profile of the PDL740 may impart a substantially valley-shaped configuration to the emission region 1210 of each (sub)pixel 1810 / 134x by a region of increased thickness along the boundary between the lateral surface 720 of the surrounding non-emission region 1220 and the lateral surface 710 of the surrounding emission region 1210, corresponding to (sub)pixel 1810 / 134x.

[0397] In some non-limiting examples, the profile of PDL740 may have a reduced thickness beyond such valley-shaped configurations, including, but not limited to, being substantially good within the lateral surface 720 of such non-emission region 1220, and being away from the boundary between the surrounding lateral surface 720 of the non-emission region 1220 and the lateral surface 710 of the surrounding emission region 1210.

[0398] While the PDL740 is generally shown having a linearly inclined surface to form a valley-shaped configuration defining the emission region 1210 surrounded thereby, those skilled in the art will understand that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and / or configuration of such a PDL740 can be varied. In some non-limiting examples, the PDL740 may be formed with steeper or gentler inclined portions. In some non-limiting examples, such a PDL740 may be configured to extend substantially perpendicularly away from the surface on which it is deposited, so as to cover at least one edge of the first electrode 620. In some non-limiting examples, such a PDL740 may be configured to deposit at least one semiconducting layer 630 thereon by a solution processing technique, including but not limited to inkjet printing.

[0399] In some non-limiting examples, at least one semiconducting layer 630 may be deposited on the exposed layer surface 11 of the device 600, including at least a portion of the lateral surface 710 of such emission region 1210 of (sub)pixel 1810 / 134x. In some non-limiting examples, within at least the lateral surface 710 of the emission region 1210 of (sub)pixel 1810 / 134x, such exposed layer surface 11 may include a first electrode 620 when at least one semiconducting layer 630 (and / or its layers 631, 633, 635, 637, 639) is deposited.

[0400] In some non-limiting examples, at least one semiconducting layer 630 may also extend beyond the lateral surface 710 of the (sub)pixel 1810 / 134x emission region 1210 and at least partially within the lateral surface 720 of the surrounding non-emission region 1220. In some non-limiting examples, such exposed layer surface 11 of the surrounding non-emission region 1220 may include a PDL 740 when the at least one semiconducting layer 630 is deposited.

[0401] In some non-limiting examples, the second electrode 640 may be positioned above the exposed layer surface 11 of the device 600, including at least a portion of the lateral surface 710 of the emission region 1210 of the (sub)pixel 1810 / 134x. In some non-limiting examples, within at least the lateral surface 710 of the emission region 1210 of the (sub)pixel 1810 / 134x, such exposed layer surface 11 may include at least one semiconducting layer 630 when the second electrode 620 is deposited.

[0402] In some non-limiting examples, the second electrode 640 may also extend beyond the lateral surface 710 of the (sub)pixel 1810 / 134x emission region 1210 and at least partially within the lateral surface 720 of the surrounding non-emission region 1220. In some non-limiting examples, such exposed layer surface 11 of the surrounding non-emission region 1220 may include the PDL 740 at the time of deposition of the second electrode 640.

[0403] In some non-limiting examples, the second electrode 640 may extend substantially all or substantially part of the lateral surface 720 of the surrounding non-emission region 1220.

[0404] Selective deposition of patterned electrodes In some non-limiting examples, the ability to achieve selective deposition of a deposited material 331 in an open-mask and / or mask-free deposition process by the prior selective deposition of a patterning coating 210, including but not limited to NIC110, can be employed to achieve selective deposition of patterned electrodes 620, 640, 1150, and / or at least one layer thereof of an optoelectronic device, including but not limited to an OLED device 600 and / or a conductive element electrically coupled thereto.

[0405] Thus, by combining the selective deposition of NIC110 as the patterning coating 210 in Figure 2 using the shadow mask 215, and the open-mask and / or mask-free deposition of the deposition material 331, selective deposition of at least one deposition layer 130 is performed without using the shadow mask 215 in the deposition process to form the deposition layer 130, as shown in the device 100 in Figure 1. a In this, a device feature portion can be formed that includes, but is not limited to, patterned electrodes 620, 640, 1150, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto. In some non-limiting examples, such patterning may be used in device 100 a The permeability of the material may be permitted and / or enhanced.

[0406] To give such device 600 various structural and / or performance capabilities, many non-limiting examples of such patterned electrodes 620, 640, 1150 and / or at least one layer thereof, and / or conductive elements electrically coupled thereto are described here.

[0407] As a result of the above, the objective may be to selectively deposit a device feature portion, including, but not limited to, a first electrode 620, a second electrode 640, an auxiliary electrode 1150, and / or a conductive element electrically coupled thereto, in a pattern on the exposed layer surface 11 of the front plane 610 of the device 600, across the lateral surface 710 of the emission region 1210 of the (sub)pixel 1810 / 134x, and / or the lateral surface 720 of the non-emission region 1220 surrounding the emission region 1210. In some non-limiting examples, the first electrode 620, the second electrode 640, and / or the auxiliary electrode 1150 may be deposited on at least one of a plurality of deposition layers 130.

[0408] Figure 8 shows an example of a patterned electrode 800 in plan view, and the figure may show a second electrode 640 suitable for use in an example of version 900 of device 600 (Figure 9). The electrode 800 may be formed by a pattern 810 comprising a single continuous structure having or defining a plurality of patterned apertures 820 therein, where the apertures 820 may correspond to areas of device 600 without a cathode.

[0409] In the figure, as a non-limiting example, pattern 810 has a lateral surface 710 of emission region 1210 corresponding to (sub)pixel 1810 / 134x, and such emission region 1210 The lateral surfaces 720 of the surrounding non-emitting region 1220 can be arranged over the entire lateral range of the device 900 without distinction. Thus, the examples shown may correspond to a device 900 that is substantially transparent to light incident on its external surface, in addition to the emission of photons internally generated within the device 900 (in the form of top emission, bottom emission, and / or bilateral emission), as disclosed herein.

[0410] The transparency of device 900 can be adjusted and / or tuned by changing the pattern 810 employed, including, but not limited to, the average size of the apertures 820, and / or the spacing and / or density of the apertures 820.

[0411] Now, looking at Figure 9, a cross-sectional view of device 900 taken along line 9-9 in Figure 8 may be shown. In the figure, device 900 may be shown as comprising a substrate 10, a first electrode 620, and at least one semiconducting layer 630.

[0412] The NIC110 can be selectively arranged in a pattern substantially corresponding to the pattern 810 on the exposed layer surface 11 of the base layer.

[0413] A suitable deposition layer 130 for forming the patterned electrode 800, which is the second electrode 640 in the figure, can be deposited on substantially all of the exposed layer surface 11 of the base layer using an open mask and / or mask-free mask deposition process. The base layer may include both the region of NIC 110 deposited in pattern 1810 and the region of at least one semiconducting layer 630 of pattern 810 where NIC 110 is not deposited. In some non-limiting examples, the region of NIC 110 may substantially correspond to the first portion 101 including the aperture 820 shown in pattern 810.

[0414] Due to the nucleation suppression properties of these regions of pattern 810 (corresponding to aperture 820) on which NIC 110 is located, the deposited material 331 located on such regions may tend not to remain, thereby resulting in a selective deposition pattern of the deposited layer 130 that substantially corresponds to the rest of pattern 810, thereby leaving these regions of the first portion 101 of pattern 810 corresponding to aperture 820 substantially lacking the closed coating 140 of the deposited layer 130.

[0415] In other words, the cathode-forming deposition layer 130 can be selectively deposited only on a second portion 102 which includes these regions of at least one semiconducting layer 630 that surrounds but does not occupy the aperture 820 of pattern 810.

[0416] Figure 10A is a plan view schematic diagram showing multiple patterns 1020 and 1040 of electrodes 620, 640 and 1150.

[0417] In some non-limiting examples, the first pattern 1020 may include a plurality of elongated, spaced-apart regions extending laterally. In some non-limiting examples, the first pattern 1020 may include a plurality of first electrodes 620. In some non-limiting examples, a plurality of regions including the first pattern 1020 may be electrically coupled.

[0418] In some non-limiting examples, the second pattern 1040 may include a plurality of elongated, spaced-apart regions extending in a second transverse direction. In some non-limiting examples, the second transverse direction may be substantially perpendicular to the first transverse direction. In some non-limiting examples, the second pattern 1040 may include a plurality of second electrodes 640. In some non-limiting examples, a plurality of regions including the second pattern 1040 may be electrically coupled.

[0419] In some non-limiting examples, the first pattern 1020 and the second pattern 1040 may form part of an example of a version of device 600, generally indicated by 1000.

[0420] In some non-limiting examples, the lateral surface 710 of the emission region 1810 corresponding to (sub)pixel 1810 / 134x may be formed where the first pattern 1020 overlaps with the second pattern 1040. In some non-limiting examples, the lateral surface 720 of the non-emission region 1220 may correspond to any lateral surface other than the lateral surface 710.

[0421] In some non-limiting examples, a first terminal, which may be the positive terminal of power supply 605, may be electrically coupled to at least one electrode 620, 640, 1150 of the first pattern 1020. In some non-limiting examples, the first terminal may be coupled to at least one electrode 620, 640, 1150 of the first pattern 1020 through at least one drive circuit. In some non-limiting examples, a second terminal, which may be the negative terminal of power supply 605, may be electrically coupled to at least one electrode 620, 640, 1150 of the second pattern 1040. In some non-limiting examples, the second terminal may be coupled to at least one electrode 620, 640, 1150 of the second pattern 1040 through at least one drive circuit.

[0422] Looking at Figure 10B, a cross-sectional view of device 1000 at deposition stage 1000b can be shown, taken along line 10B-10B in Figure 10A. In the figure, device 1000 at stage 1000b may be shown including the substrate 10.

[0423] NIC110 can be selectively arranged in a pattern substantially corresponding to the opposite of the first pattern 1020 on the exposed layer surface 11 of the base layer, which may be the substrate 10, as shown in the figure.

[0424] A deposit layer 130 suitable for forming the first pattern 1020 of electrodes 620, 640, and 1150, which is the first electrode 620 in the figure, can be deposited on substantially all of the exposed layer surface 11 of the base layer using an open mask and / or mask-free mask deposition process. The base layer may include both a region of NIC 110 arranged in the reverse of the first pattern 1020 and a region of substrate 10 arranged with the first pattern 1020 where NIC 110 is not deposited. In some non-limiting examples, the region of substrate 10 may substantially correspond to elongated separated regions of the first pattern 1020, while the region of NIC 110 may substantially correspond to a first portion 101 with a gap between them.

[0425] Due to the nucleation suppression properties of these regions (corresponding to the gaps between them) of the first pattern 1020 on which the NIC 110 is located, the deposit layers 130 located on such regions tend not to remain, thereby resulting in a selective deposition pattern of deposit layers 130 that substantially corresponds to the elongated, separated regions of the first pattern 1020, thereby leaving a first portion 101 that includes gaps between the deposit layers 130, substantially lacking the closed coating 140 of the deposit layers 130.

[0426] In other words, the deposited layer 130 that can form the first pattern 1020 of electrodes 620, 640, and 1150 can be selectively deposited only on the second portion 102 of the substrate 10 that includes these regions defining the elongated, separated regions of the first pattern 1020.

[0427] Now, looking at Figure 10C, a cross-sectional view 1000c of device 1000 may be shown, taken along the line 10C-10C in Figure 10A. In the figure, device 1000 may be shown as comprising a substrate 10, a first pattern 1020 of electrodes 620 deposited as shown in Figure 10B, and at least one semiconducting layer 630.

[0428] In some non-limiting examples, at least one semiconducting layer 630 may be provided as a common layer extending substantially over the entire lateral surface of the device 1000.

[0429] The NIC110 can be selectively arranged in a pattern substantially corresponding to a second pattern 1040 on the exposed layer surface 11 of the base layer, which is at least one semiconducting layer 630, as shown in the figure.

[0430] A deposit layer 130 suitable for forming the second pattern 1040 of electrodes 620, 640, and 1150, which is the second electrode 640 in the figure, can be deposited on substantially all of the exposed layer surface 11 of the base layer using an open mask and / or mask-free mask deposition process. The base layer may include both a region of NIC 110 deposited in the reverse direction of the second pattern 1040 and a region of at least one semiconducting layer 630 of the second pattern 1040 where NIC 110 is not deposited. In some non-limiting examples, the region of at least one semiconducting layer 630 may substantially correspond to the first portion 101 including elongated separated regions of the second pattern 1040, while the region of NIC 110 may substantially correspond to the gap between them.

[0431] Due to the nucleation suppression properties of these regions (corresponding to the gaps between them) of the second pattern 1040 on which the NIC 110 is located, the deposit layers 130 located on such regions tend not to remain, thereby resulting in a selective deposition pattern of deposit layers 130 that substantially corresponds to the elongated, separated regions of the second pattern 1040, thereby leaving a first portion 101 that includes gaps between the deposit layers 130, substantially lacking the closed coating 140 of the deposit layers 130.

[0432] In other words, the deposit layer 130 that can form the second pattern 1040 of electrodes 620, 640, and 1150 can be selectively deposited only on the second portion 102 which includes these regions of NPC 520 that define the elongated, separated regions of the second pattern 1040.

[0433] In some non-limiting examples, the thickness of the NIC 110 and the deposited layer 130 subsequently deposited to form one or both of the first patterns 1020 and / or the second patterns 1040 of electrodes 620, 640, and 1150 can be varied according to a variety of parameters, including but not limited to a given application and performance characteristics. In some non-limiting examples, the thickness of the NIC 110 may be equal to and / or substantially less than the thickness of the deposited layer 130 subsequently deposited. The use of a relatively thin NIC 110 to achieve selective patterning of the deposited layer 130 subsequently deposited may be suitable for providing a flexible device 600. In some non-limiting examples, a relatively thin NIC 110 may provide a relatively flat surface on which a barrier coating 1050 can be deposited. In some non-limiting examples, providing such a relatively flat surface for application of the barrier coating 1050 may increase the adhesion of the barrier coating 1050 to such a surface.

[0434] At least one of the first pattern 1020 of electrodes 620, 640, and 1150 and at least one of the second pattern 1040 of electrodes 620, 640, and 1150 may be electrically coupled to the power supply 605, either directly or / or, in some non-limiting examples, through their respective drive circuits 1200 for controlling photon emission from the lateral surfaces 710 of the emission region 1810 corresponding to (sub)pixels 1810 / 134x.

[0435] Auxiliary electrode Those skilled in the art will see that the second electrode 64 in the second pattern 1040 shown in Figures 10A-10C It will be understood that the process of forming 0 can, in some non-limiting examples, be used in a similar manner to form an auxiliary electrode 1150 for device 1000. In some non-limiting examples, its second electrode 640 may include a common electrode, and the auxiliary electrode 1150 may, in some non-limiting examples, be deposited with a second pattern 1040 above the second electrode 640 or, in some non-limiting examples, below it, and be electrically coupled thereto. In some non-limiting examples, the second pattern 1040 for such an auxiliary electrode 1150 may be such that the elongated separated regions of the second pattern 1040 are substantially within the lateral surfaces 720 of a non-emitting region 1820 that surrounds the lateral surfaces 710 of an emitting region 1810 corresponding to (sub)pixels 1810 / 134x. In some non-limiting examples, the second pattern 1040 for such an auxiliary electrode 1150 may be such that the elongated separated regions of the second pattern 1040 are substantially located within the lateral surfaces 710 of the emission regions 1810 corresponding to (sub)pixels 1810 / 134x, and / or within the lateral surfaces 720 of the non-emission regions 1820 surrounding them.

[0436] Figure 11 may show an example of a cross-sectional view of an example of version 1100 of device 600, which is substantially similar to device 600 but may further include at least one auxiliary electrode 1150 (not shown) arranged in the pattern above and electrically coupled to the second electrode 640.

[0437] The auxiliary electrode 1150 may be conductive. In some non-limiting examples, the auxiliary electrode 1150 may be formed of at least one metal and / or metal oxide. Non-limiting examples of such metals include Cu, Al, molybdenum (Mo), or Ag. Non-limiting examples may include, but are not limited to, multilayer metallic structures formed of Mo / Al / Mo. Non-limiting examples of such metal oxides include ITO, ZnO, IZO, or other oxides containing In or Zn. In some non-limiting examples, the auxiliary electrode 1150 may include multilayer structures formed of combinations of at least one metal and at least one metal oxide, including, but not limited to, Ag / ITO, Mo / ITO, ITO / Ag / ITO, or ITO / Mo / ITO. In some non-limiting examples, the auxiliary electrode 1150 may include multiple such conductive materials.

[0438] The device 1100 may be described as comprising a substrate 10, a first electrode 620, and at least one semiconducting layer 630.

[0439] The second electrode 640 may be disposed on substantially the entire exposed layer surface 11 of at least one semiconducting layer 630.

[0440] In some non-limiting examples, particularly in the top-emitting device 1100, the second electrode 640 may be formed, in some non-limiting examples, by depositing a relatively thin conductive film layer (not shown) to reduce optical interference (including, but not limited to, attenuation, reflection, and / or diffusion) related to the presence of the second electrode 640. In some non-limiting examples, as discussed elsewhere, the reduced thickness of the second electrode 640 may generally increase the sheet resistance R of the second electrode 640, thereby reducing the performance and / or efficiency of the device 1100 in some non-limiting examples. By providing an auxiliary electrode 1150 that can be electrically coupled with the second electrode 640, the sheet resistance R, and therefore the IR drop associated with the second electrode 640, may be reduced in some non-limiting examples.

[0441] In some non-limiting examples, the device 1100 may be a bottom-emitting and / or bi-sided emitting device 1100. In such examples, the second electrode 640 may be formed as a relatively thick conductive layer without substantially affecting the optical properties of such device 1100. Nevertheless, even in such circumstances, the second electrode 640 also Nevertheless, as a non-limiting example, since it can be formed as a relatively thin conductive film layer (not shown), the device 1100 may be substantially transparent to light incident on its external surface, so that, in addition to the emission of photons internally generated within the device 1100, a considerable portion of such external incident light can pass through the device 1100, as disclosed herein.

[0442] The NIC110 can be selectively arranged in a pattern on the exposed layer surface 11 of the base layer, which may be at least one semiconducting layer 630, as shown in the figure. In some non-limiting examples, the NIC110 can be arranged in a first portion of the pattern as a series of parallel columns 1120, as shown in the figure.

[0443] A deposition layer 130 suitable for forming patterned auxiliary electrodes 1150 can be deposited on substantially all of the exposed layer surface 11 of the base layer using an open mask and / or mask-free mask deposition process. The base layer may include both a region of NIC 110 arranged in a pattern of rows 1120 and a region of at least one semiconducting layer 630 on which NIC 110 is not deposited.

[0444] Due to the nucleation suppression properties of these rows 1120 on which the NIC 110 is located, the deposit layers 130 located on such rows 1120 tend not to remain, thereby resulting in a selective deposition pattern of deposit layers 130 that substantially corresponds to at least one second portion 102 of the pattern, thereby leaving a first portion 101 that includes rows 1120 substantially lacking a closed coating 140 of deposit layers 130.

[0445] In other words, the deposited layer 130 that can form the auxiliary electrode 1150 can be selectively deposited only on the second portion 102 which includes these regions of at least one semiconducting layer 630 that surrounds but does not occupy the column 1120.

[0446] In some non-limiting examples, optical interference related to the presence of the auxiliary electrode 1150 can be controlled and / or reduced by selectively depositing the auxiliary electrode 1150 such that it covers only certain rows 1120 of the lateral surface of the device 1100, while leaving those other areas uncovered.

[0447] In some non-limiting cases, the auxiliary electrode 1150 may be selectively deposited in a pattern that is not easily detectable to the naked eye from a typical viewing distance.

[0448] In some non-limiting examples, the auxiliary electrode 1150 may be formed in a device other than an OLED device, including when it reduces the effective resistance of the electrode in such a device.

[0449] The ability to pattern electrodes 620, 640, 1150, and 5050, including but not limited to a second electrode 640 and / or auxiliary electrode 1150, without employing a shadow mask 215 during the high-temperature deposition process of the deposition layer 130, by employing a selective coating 210 including but not limited to the process illustrated in Figure 2, allows for the development of numerous configurations of the auxiliary electrode 1150.

[0450] In some non-limiting examples, the auxiliary electrode 1150 may be positioned between adjacent emission regions 1210 (Figure 12) and may be electrically coupled to the second electrode 640. In some non-limiting examples, the width of the auxiliary electrode 1150 may be less than the separation distance between adjacent emission regions 1120. As a result, a gap may exist within at least one non-emission region 1220 (Figure 12) on each side of the auxiliary electrode 1150. In some non-limiting examples, such an arrangement may allow the auxiliary electrode 1150 to be positioned between at least one of the emission regions 1110, in some non-limiting examples. This can reduce the possibility of interference with the optical output of device 1100. In some non-limiting examples, such arrangement may be appropriate when the auxiliary electrode 1150 is relatively thick (in some non-limiting examples, in thickness exceeding several hundred nanometers and / or on the order of several microns). In some non-limiting examples, the aspect ratio of the auxiliary electrode 1150 may exceed about 0.05, for example, at least about 0.1, 0.2, 0.5, 0.8, 1, or 2. In a non-limiting example, the height (thickness) of the auxiliary electrode 1150 may exceed about 50 nm, for example, at least about 80 nm, 100 nm, 200 nm, 500 nm, 700 nm, 1,000 nm, 1,500 nm, 1,700 nm, or 2,000 nm.

[0451] Figure 12 is a plan view schematic showing an example of a pattern 1250 of auxiliary electrodes 1150 formed as a grid that can be superimposed on both the lateral surface 710 of the emission region 1210, which may correspond to (sub)pixels 1810 / 134x of an example of version 1200 of device 600, and the lateral surface 720 of the non-emission region 1220 surrounding the emission region 1210.

[0452] In some non-limiting examples, the auxiliary electrode pattern 1250 may extend substantially only above some, but not all, of the lateral surfaces 720 of the non-emitting region 1220, so as not to substantially cover any of the lateral surfaces 710 of the emitting region 1210.

[0453] Those skilled in the art will understand that in the figures the auxiliary electrode pattern 1250 may be shown as being formed as a continuous structure such that all its elements are physically connected and electrically coupled to each other and electrically coupled to at least one electrode 620, 640, 1150 which may be a first electrode 620 and / or a second electrode 640 in some non-limiting examples, and that in some non-limiting examples the auxiliary electrode pattern 1250 may be provided as a plurality of separate elements of the auxiliary electrode pattern 1250 which remain electrically coupled to each other but cannot be physically coupled to each other. Even so, such separate elements of the auxiliary electrode pattern 1250 may still substantially lower the sheet resistance R of the device 1200, and consequently the sheet resistance R of the at least one electrode 620, 640, 1150 with which they are electrically coupled, so as to increase the efficiency of the device 1200 without substantially interfering with its optical properties.

[0454] In some non-limiting examples, the auxiliary electrode 1150 may be employed in device 600 having various arrangements of (sub)pixels 1810 / 134x. In some non-limiting examples, the (sub)pixel 1810 / 134x arrangement may be substantially diamond-shaped.

[0455] As a non-limiting example, Figure 13A may show in plan view multiple groups 1341-1343 of emission regions 1210 corresponding to each subpixel 134x, surrounded by the lateral sides of multiple non-emission regions 1320, including a diamond configuration of PDL740. In some non-limiting examples, this configuration may be defined by patterns 1341-1343 of emission regions 1210 and PDL740 in an alternating pattern of first and second rows.

[0456] In some non-limiting examples, the lateral surface 720 of the non-emission region 1220 containing PDL740 may be substantially elliptical. In some non-limiting examples, the major axis of the lateral surface 720 of the non-emission region 1220 in the first row may be aligned and substantially perpendicular to the major axis of the lateral surface 720 of the non-emission region 1220 in the second row. In some non-limiting examples, the major axis of the lateral surface 720 of the non-emission region 1220 in the first row may be substantially parallel to the axis of the first row.

[0457] In some non-limiting examples, the first group 1341 of the emission region 1210 may correspond to subpixels 134x that emit light at a first wavelength, and in some non-limiting examples, the first group Subpixel 134x of 1341 may correspond to the R (red) subpixel 1341. In some non-limiting examples, the lateral surface 710 of the emission region 1210 of the first group 1341 may have a substantially diamond-shaped configuration. In some non-limiting examples, the emission region 1210 of the first group 1341 may be within the pattern of the first row before and after the PDL 740. In some non-limiting examples, the lateral surface 710 of the emission region 1210 of the first group 1341 may slightly overlap with the lateral surface 720 of the preceding and succeeding non-emission regions 1220 containing the PDL 740 in the same row, and the lateral surface 720 of the adjacent non-emission region 1220 containing the PDL 740 in the preceding and succeeding patterns of the second row.

[0458] In some non-limiting examples, the second group 1342 of the emission region 1210 may correspond to subpixels 134x that emit light at a second wavelength, and in some non-limiting examples, the subpixels 134x of the second group 1342 may correspond to G (green) subpixels 1342. In some non-limiting examples, the lateral surface 710 of the emission region 1210 of the second group 1341 may have a substantially elliptical configuration. In some non-limiting examples, the emission region 1210 of the second group 1341 may be within the pattern of a second row before and after the PDL 740. In some non-limiting examples, some major axes of the lateral surface 710 of the emission region 1210 of the second group 1341 may be at a first angle that may be 45° with respect to the axis of the second row in some non-limiting examples. In some non-limiting examples, the other major axis of the lateral surface 710 of the emission region 1210 of the second group 1341 may be at a second angle which may be substantially perpendicular to the first angle in some non-limiting examples. In some non-limiting examples, emission regions 1210 of the first group 1341 whose lateral surface 710 may have a major axis at the first angle may alternate with emission regions 1210 of the first group 1341 whose lateral surface 710 may have a major axis at the second angle.

[0459] In some non-limiting examples, the third group 1343 of the emission region 1210 may correspond to subpixels 134x that emit light at a third wavelength, and in some non-limiting examples, the subpixels 134x of the third group 1343 may correspond to B (blue) subpixels 1343. In some non-limiting examples, the lateral surface 710 of the emission region 1210 of the third group 1343 may have a substantially diamond-shaped configuration. In some non-limiting examples, the emission region 1210 of the third group 1343 may be within a pattern of first rows before and after the PDL 740. In some non-limiting examples, the lateral surface 710 of the emission region 1210 of the third group 1343 may slightly overlap with the lateral surfaces 710 of the preceding and succeeding non-emission regions 1220 containing the PDL 740 in the same row, and with the lateral surfaces 720 of adjacent non-emission regions 1220 containing the PDL 740 in the preceding and succeeding patterns of a second row. In some non-restrictive examples, the pattern of the second row may include emission regions 1210 of the first group 1341, alternating with emission regions 1210 of the third group 1343, each located before and after PDL740.

[0460] Looking at Figure 13B, an example of a cross-sectional view of device 1300 taken along line 13B-13B in Figure 13A may be shown. In the figure, device 1300 may be shown as comprising a substrate 10 and multiple elements of a first electrode 620 formed on its exposed layer surface 11. The substrate 10 may include a base substrate 612 (not shown for the sake of simplicity of illustration) and / or at least one TFT structure 701 corresponding to and driving each subpixel 134x. PDL 740 may be formed above the substrate 10 between the elements of the first electrode 620 and define emission regions 1210 above each element of the first electrode 620, separated by non-emission regions 1220 containing the PDL 740. In the figure, all emission regions 1210 may correspond to a second group 1342.

[0461] In some non-limiting examples, at least one semiconducting layer 630 may be deposited on each element of the first electrode 620 between the surrounding PDL 740.

[0462] In some non-specific cases, the cathode may be common in some non-specific cases. The second electrode 640 may be deposited above the emission region 1210 of the second group 1342 for forming its G (green) subpixel 1342, and above the surrounding PDL 740.

[0463] In some non-limiting examples, NIC110 may be selectively deposited above the second electrode 640 over the lateral surface 710 of the emission region 1210 of the second group 1342 of G (green) subpixels 1342, allowing for the selective deposition of a deposit layer 130 above a portion of the second electrode 640 that may substantially lack NIC110, i.e., over the lateral surface 720 of the non-emission region 1220 containing the PDL740. In some non-limiting examples, the deposit layer 130 may tend not to remain on the sloped portion of the PDL740, but rather tend to descend towards the base of such sloped portion that may be coated with NIC110, so the deposit layer 130 may tend to accumulate along a substantially flat portion of the PDL740. In some non-limiting examples, the deposit layer 130 on a substantially flat portion of the PDL740 may form at least one auxiliary electrode 1150 that can be electrically coupled with the second electrode 640.

[0464] In some non-limiting examples, device 1300 may include a CPL and / or outcoupling layer. In some non-limiting examples, such a CPL and / or outcoupling layer may be provided directly on the surface of the second electrode 640 and / or the surface of the NIC 110. In some non-limiting examples, such a CPL and / or outcoupling layer may be provided over the lateral side surface 710 of at least one emission region 1210 corresponding to (sub)pixels 1810 / 134x.

[0465] In some non-limiting examples, NIC110 can also act as a refractive index matching coating. In some non-limiting examples, NIC110 can also act as an outcoupling layer.

[0466] In some non-limiting examples, device 1300 may include an encapsulation layer. Non-limiting examples of such an encapsulation layer include a glass cap, barrier film, barrier adhesive, barrier coating 1050, and / or TFE layer 1350, as shown by the dashed outline in the figure, provided to encapsulate device 1300. In some non-limiting examples, the TFE layer 1350 may be considered a type of barrier coating 1050.

[0467] In some non-limiting examples, the encapsulation layer may be positioned above at least one of the second electrodes 640 and / or NIC 110. In some non-limiting examples, the device 1300 may include, but is not limited to, a polarizer, a color filter, an anti-reflective coating, an anti-glare coating, a cover glass, and / or an optically clear adhesive (OCA), additional optical layers and / or structural layers, coatings, and components.

[0468] Looking at Figure 13C, an example of a cross-sectional view of device 1300 taken along line 13C-13C in Figure 13A may be shown. In the figure, device 1300 may be shown as comprising a substrate 10 and multiple elements of a first electrode 620 formed on its exposed layer surface 11. PDL 740 may be formed above the substrate 10 between the elements of the first electrode 620 and define emission regions 1210 above each element of the first electrode 620, separated by non-emission regions 1220 containing the PDL 740. In the figure, the emission regions 1210 may alternately correspond to a first group 1341 and a third group 1343.

[0469] In some non-limiting examples, at least one semiconducting layer 630 may be deposited on each element of the first electrode 620 between the surrounding PDL 740.

[0470] In some non-specific cases, the cathode may be common in some non-specific cases. The second electrode 640 may be deposited above the emission region 1210 of the first group 1341 for forming its R (red) subpixel 1341, above the emission region 1210 of the third group 1343 for forming its B (blue) subpixel 1343, and above the surrounding PDL 740.

[0471] In some non-limiting examples, NIC110 may be selectively deposited above the second electrode 640 over the lateral surface 710 of the emission region 1210 of the first group 1341 of R (red) subpixels 1341 and the third group 1343 of B (blue) subpixels 1343, allowing for the selective deposition of a deposit layer 130 above a portion of the second electrode 640 that may substantially lack NIC110, i.e., over the lateral surface 720 of the non-emission region 1220 containing the PDL740. In some non-limiting examples, the deposit layer 130 may tend not to remain on the sloped portion of the PDL740, but rather tend to descend to the base of such sloped portion coated with NIC110, so the deposit layer 130 may tend to accumulate along a substantially flat portion of the PDL740. In some non-limiting examples, a deposit 130 on a substantially flat portion of the PDL740 may form at least one auxiliary electrode 1150 that can be electrically coupled to the second electrode 640.

[0472] Looking at Figure 14, an example of version 1400 of device 600 can be shown, which may include a device having the additional deposition steps described herein, as shown in the cross-sectional view of Figure 7.

[0473] Device 1400 may show a NIC 110 selectively deposited above the exposed layer surface 11 of the second electrode 640, in the figure, within a base layer, which is substantially corresponding to the lateral surface 710 of the emission region 1210 corresponding to (sub) pixels 1810 / 134x, but not within a second portion 102 of device 1400, which is substantially corresponding to the lateral surface 720 of the non-emission region 1220 surrounding the first portion 101.

[0474] In some non-limiting cases, NIC110 can be selectively deposited using shadow mask 215.

[0475] Within the first portion 101, the NIC110 may provide an exposed layer surface 11 that has a relatively low initial adhesion probability S0 for the deposition of a deposit material 331 which is subsequently deposited as a deposit layer 130 to form an auxiliary electrode 1150.

[0476] Following the selective deposition of NIC110, the deposited material 331 may be deposited on top of the device 1400 but remain substantially only within a second portion 102 that substantially lacks NIC110, thereby forming an auxiliary electrode 1150.

[0477] In some non-limiting examples, the deposited material 331 may be deposited using open-mask and / or mask-free deposition processes.

[0478] The auxiliary electrode 1150 is located above the second electrode 640 over a second portion where the NIC 110 may be substantially absent, as shown, and may be electrically coupled to the second electrode 640, including by physical contact with it, to reduce the sheet resistance R of the second electrode 640.

[0479] In some non-limiting examples, the deposit layer 130 may contain substantially the same material as the second electrode 640 so as to ensure a high initial adhesion probability S0 for the deposition of the deposit material 331 in the second portion 102.

[0480] In some non-limiting examples, the second electrode 640 may substantially contain pure Mg and / or alloys with other metals, including but not limited to Mg and Ag. In some non-limiting examples, the Mg:Ag alloy composition may be in the range of about 1:9 by volume. In some non-limiting examples, the second electrode 640 may contain metal oxides, including but not limited to ternary metal oxides such as ITO and / or IZO, and / or combinations of metals and / or metal oxides.

[0481] In some non-limiting examples, the deposit layer 130 used to form the auxiliary electrode 1150 may contain substantially pure Mg.

[0482] Now, looking at Figure 15, an example of version 1500 of device 600 can be shown, which may include a device having the additional deposition steps described herein, as shown in the cross-sectional view of Figure 7.

[0483] Device 1500 may show a base layer, in the figure, a NIC 110 selectively deposited above the exposed layer surface 11 of the second electrode 640, which is within a first portion 101 of device 1500 but not within a second portion 102, which substantially corresponds to a portion of the lateral surface 710 of the emission region 1210 corresponding to (sub)pixels 1810 / 134x. In the figure, the first portion 101 may partially extend along a sloping portion of the PDL 740 defining the emission region 1210.

[0484] In some non-limiting cases, NIC110 can be selectively deposited using shadow mask 215.

[0485] Within the first portion 101, the NIC110 may provide an exposed layer surface 11 that has a relatively low initial adhesion probability S0 for the deposition of a deposit material 331 which is subsequently deposited as a deposit layer 130 to form an auxiliary electrode 1150.

[0486] Following the selective deposition of NIC110, the deposited material 331 may be deposited on top of the device 1500 but remain substantially only within a second portion 102 that substantially lacks NIC110, thereby forming an auxiliary electrode 1150. Thus, in the device 1500, the auxiliary electrode 1150 may partially extend over a sloping portion of the PDL740 that defines the emission region 1210.

[0487] In some non-limiting examples, the deposit layer 130 may be deposited using open-mask and / or mask-free deposition processes.

[0488] The auxiliary electrode 1150 is located above the second electrode 640 over a second portion 102 that substantially lacks the NIC 110, as shown, and can be electrically coupled to the second electrode 640, including by physical contact with it, to reduce the sheet resistance R of the second electrode 640.

[0489] In some non-limiting examples, the material that may constitute the second electrode 640 may not have a high initial adhesion probability S0 for the deposition of the deposited material 331.

[0490] Figure 16 may illustrate an example of a version 1600 of device 600, which may include a device having additional deposition steps as described herein, as shown in the cross-sectional view of Figure 7.

[0491] Device 1600 is piled on top of the exposed layer surface 11 of the base material, the second electrode 640 in the figure. This may show the accumulated NPC520.

[0492] In some non-limiting cases, NPC520 may be deposited using open-mask and / or mask-free deposition processes.

[0493] Subsequently, NIC110 can be selectively deposited on the exposed layer surface 11 of the base material, NPC520 in the figure, within a first portion 101 of device 1600 that substantially corresponds to a portion of the lateral surface 710 of the emission region 1210 corresponding to (sub)pixel 1810 / 134x, but not within a second portion 102 of device 1600 that substantially corresponds to the lateral surface 720 of the non-emission region 1220 surrounding the first portion 101.

[0494] In some non-limiting cases, NIC110 can be selectively deposited using shadow mask 215.

[0495] Within the first portion 101, the NIC110 may provide an exposed layer surface 11 that has a relatively low initial adhesion probability S0 for the deposition of a deposit material 331 which is subsequently deposited as a deposit layer 130 to form an auxiliary electrode 1150.

[0496] Following the selective deposition of NIC110, the deposited material 331 may be deposited on top of the device 1600, but may remain substantially only within a second portion 102 that substantially lacks NIC110, thereby forming an auxiliary electrode 1150.

[0497] In some non-limiting examples, the deposit layer 130 may be deposited using open-mask and / or mask-free deposition processes.

[0498] The auxiliary electrode 1150 may be electrically coupled to the second electrode 640 to reduce its sheet resistance. As shown, the auxiliary electrode 1150 cannot be above the second electrode 640 and cannot be in physical contact with it; nevertheless, those skilled in the art will understand that the auxiliary electrode 1150 may be electrically coupled to the second electrode 640 by some well understood mechanism. In a non-limiting example, the presence of a relatively thin film of NIC 110 (up to about 50 nm in some non-limiting examples) may still allow current to pass through it and thus allow for a reduction in the sheet resistance R of the second electrode 640.

[0499] Looking at Figure 17, an example of version 1700 of device 600 can be shown, which may include a device having the additional deposition steps described herein, as shown in the cross-sectional view of Figure 7.

[0500] Device 1700 may show NIC 110 deposited on the exposed layer surface 11 of the base material, in the figure, the second electrode 640.

[0501] In some non-limiting cases, NIC110 may be deposited using open-mask and / or mask-free deposition processes.

[0502] NIC110 can provide an exposed layer surface 11 that has a relatively low initial adhesion probability S0 for the deposition of the deposit material 331 which is subsequently deposited as a deposit layer 130 to form the auxiliary electrode 1150.

[0503] After the deposition of NIC110, NPC520 substantially corresponds to a portion of the lateral side 720 of the non-emission region 1220 and the emission region 121 corresponding to (sub)pixel 1810 / 134x A base layer, which surrounds the second portion 102 of device 2800 substantially corresponding to the lateral surface 710 of 0, can be selectively deposited above the exposed layer surface 11 of NIC 110 in the figure.

[0504] In some non-limiting cases, NPC520 can be selectively deposited using the shadow mask 215.

[0505] NPC520 can provide an exposed layer surface 11 within the first portion 101 that has a relatively high initial adhesion probability S0 for the deposition of a deposit material 331 which is subsequently deposited as a deposit layer 130 to form an auxiliary electrode 1150.

[0506] After the selective deposition of NPC520, the deposited material 331 may be deposited on top of the device 1700, but the NIC 110 may remain substantially in the areas where it is superimposed with NPC520, forming the auxiliary electrode 1150.

[0507] In some non-limiting examples, the deposit layer 130 may be deposited using open-mask and / or mask-free deposition processes.

[0508] The auxiliary electrode 1150 may be electrically coupled to the second electrode 640 to reduce the sheet resistance R of the second electrode 640.

[0509] Transparent OLED Since the OLED device 600 can emit photons through one or both of the first electrode 620 (in the case of a bottom-emitting and / or bifacial device) and the substrate 10 and / or the second electrode 640 (in the case of a top-emitting and / or bifacial device), in some non-limiting examples, the objective may be to make one or both of the first electrode 620 and / or the second electrode 640 substantially photon (or light) transparent ("transparent") over a substantial portion of the lateral surface 710 of the emission region 1210 of the device 600. In this disclosure, such transparent elements include, but are not limited to, the electrodes 620, 640, materials that can form such elements, and / or properties thereof, which in some non-limiting examples are substantially transparent ("transparent") and / or partially transparent ("translucent") in at least one wavelength band.

[0510] Various mechanisms can be adapted to impart permeability to the device 600 over a substantial portion of the lateral surface 710 of the emission region 1210.

[0511] In some non-limiting examples, including but not limited to cases where device 600 is a bottom-emitting device and / or a bifacial-emitting device, the TFT structure 701 of the driver circuit associated with the emitting region 1210 of (sub) pixels 1810 / 134x, which can at least partially reduce the transparency of the surrounding substrate 10, can be positioned within the lateral surface 720 of the surrounding non-emitting region 1220 to avoid affecting the transparency characteristics of the substrate 10 within the lateral surface 710 of the emitting region 1210.

[0512] In some non-limiting examples where device 600 is a bifacial light-emitting device, with respect to the lateral surface 710 of the emission area 1210 of (sub) pixels 1810 / 134x, the first of electrodes 620, 640 may be substantially transparent, including but not limited to, by at least one of the mechanisms disclosed herein, and with respect to the lateral surface 710 of adjacent and / or neighboring (sub) pixels 1810 / 134x, the second of electrodes 620, 640 may be substantially transparent, including but not limited to, by at least one of the mechanisms disclosed herein. In an alternating array of (sub)pixels 1810 / 134x, the lateral surface 710 of the first emission region 1210 of a (sub)pixel 1810 / 134x can be made substantially top-emitting, while the lateral surface 710 of the second emission region 1210 of an adjacent (sub)pixel 1810 / 134x can be made substantially bottom-emitting, while only the single electrodes 620, 640 of each (sub)pixel 1810 / 134x can be made substantially transparent.

[0513] In some non-limiting examples, the mechanism for making electrodes 620, 640 (the first electrode 620 in the case of a bottom-emitting device and / or a bifacial-emitting device, and / or the second electrode 640 in the case of a top-emitting device and / or a bifacial-emitting device) transparent may be to form such electrodes 620, 640 of a transparent thin film.

[0514] In some non-limiting examples, the conductive deposited layer 130 may exhibit permeability properties by depositing conductive thin film layers of metals, including but not limited to Ag and Al, and / or by depositing thin layers of metal alloys, including but not limited to Mg:Ag alloys and / or Yb:Ag alloys. In some non-limiting examples, the alloys may include compositions in the range of about 1:9 to 9:1 by volume. In some non-limiting examples, the electrodes 620, 640 may be formed from multiple conductive thin film layers of any combination of the deposited layer 130, at least one of which may consist of TCO, a metal thin film, a metal alloy thin film, and / or any combination thereof.

[0515] In some non-limiting examples, particularly in the case of such conductive thin films, relatively thin layer thicknesses can be up to substantially tens of nanometers, contributing to enhanced transmittance quality for use in OLED devices 600, as well as to preferred optical properties (including, but not limited to, reduced microcavity effects).

[0516] In some non-limiting examples, reducing the thickness of electrodes 620 and 640 to improve permeability quality may be accompanied by an increase in the sheet resistance of electrodes 620 and 640.

[0517] In some non-limiting examples, a device 600 having at least one electrode 620, 640 with high sheet resistance will produce a large current resistance (IR) drop when coupled with a power supply 605 during operation. In some non-limiting examples, such an IR drop can be compensated to some extent by increasing the level of the power supply 605. However, in some non-limiting examples, compensating for the IR drop due to high sheet resistance by increasing the level of the power supply 605 for at least one (sub)pixel 1810 / 134x may require increasing the level of voltage supplied to other components to maintain the effective operation of device 600.

[0518] In some non-limiting examples, auxiliary electrodes 1150 can be formed on device 600 (by employing at least one thin film layer of any combination of TCO, metal thin film, and / or metal alloy thin film) to reduce the electrical supply demand of device 600 without significantly affecting the ability to make electrodes 620, 640 substantially permeable, thereby enabling more effective current transport to various emission regions of device 600, and at the same time reducing the sheet resistance of the permeable electrodes 620, 640 and their associated IR drop.

[0519] In some non-limiting examples, the specifications of the sheet resistance of the common electrodes 620, 640 of the display device 600 include the (panel) size of the device 600 and / or the tolerance for voltage variation across the device 600, but these are subject to several parameters, not limited to these. This can vary. In some non-limiting examples, the sheet resistance specification may increase as the panel size increases (i.e., a lower sheet resistance R is specified). In some non-limiting examples, the sheet resistance specification may increase as the tolerance for voltage fluctuations decreases.

[0520] In some non-limiting examples, the sheet resistance specification can be used to derive examples of auxiliary electrode thicknesses 1150 to comply with such specifications for various panel sizes.

[0521] As a non-limiting example, for a top-emitting device, the second electrode 640 may be transparent. On the other hand, in some non-limiting examples, such auxiliary electrodes 1150 may not be substantially transparent, but can be electrically coupled to the second electrode 640, including, but not limited to, by depositing a conductive deposition layer 130 between them, to reduce the effective sheet resistance of the second electrode 640.

[0522] In some non-limiting examples, such auxiliary electrodes 1150 may be positioned and / or shaped on one or both of the lateral and / or cross-sectional sides so as not to interfere with the emission of photons from the lateral side 710 of the emission region 1210 of the (sub)pixel 1810 / 134x.

[0523] In some non-limiting examples, the mechanism for fabricating the first electrode 620 and / or the second electrode 640 may be to form such electrodes 620, 640 in a pattern extending over at least a portion of the lateral surface 710 of the emission region 1210, and / or, in some non-limiting examples, over at least a portion of the lateral surface 720 of the non-emission region 1220 surrounding them. In some non-limiting examples, such a mechanism may be employed to form an auxiliary electrode 1150 at one or both of the lateral and / or cross-sectional positions and / or shapes so as not to interfere with the emission of photons from the lateral surface 710 of the emission region 1210 of (sub)pixel 1810 / 134x.

[0524] In some non-limiting examples, device 600 may be configured to substantially lack conductive oxide material in the optical path of photons emitted by device 600. In a non-limiting example, at least one of the layers and / or coatings deposited after at least one semiconducting layer 630, including but not limited to the second electrode 640, NIC 110, and / or any other layers and / or coatings deposited thereon, on the lateral surface 710 of at least one emission region 1210 corresponding to (sub)pixel 1810 / 134x, may substantially lack conductive oxide material. In some non-limiting examples, the substantially lack of conductive oxide material may reduce the absorption and / or reflection of light emitted by device 600. In a non-limiting example, conductive oxide materials, including but not limited to ITO and / or IZO, can absorb light in at least the B (blue) region of the visible spectrum, which can generally reduce the efficiency and / or performance of device 600.

[0525] In some non-restrictive cases, combinations of these and / or other mechanisms can be employed.

[0526] In addition, in some non-limiting examples, in addition to making one or more of the first electrode 620, the second electrode 640, and / or auxiliary electrode 1150 substantially transparent over a substantial portion of the lateral surface 710 of the emission region 1210 corresponding to (sub) pixels 1810 / 134x of device 600, in order to allow photons to be substantially emitted over that lateral surface 710, in addition to the emission of photons internally generated within device 600 (in top emission, bottom emission, and / or bilateral emission) as disclosed herein. Therefore, the objective may be to make at least one of the lateral surfaces 720 of the non-emitting region 1220 surrounding the device 600 substantially transparent in both the downward and upward directions, in order to make the device 600 substantially transparent to light incident on its external surface, so that a considerable portion of such externally incident light can pass through the device 600.

[0527] Figure 18A here shows an example of a plan view of a transparent (transparent) version of device 600, generally indicated as 1800. In some non-limiting examples, device 600 may be an AMOLED device having multiple pixels or pixel regions 1810 and multiple transparent regions 1820. In some non-limiting examples, at least one auxiliary electrode 1150 may be deposited on the exposed layer surface 11 of the base material between the pixel regions 1810 and / or transparent regions 1820.

[0528] In some non-limiting examples, each pixel region 1810 may contain multiple emission regions 1210, each corresponding to a subpixel 134x. In some non-limiting examples, each subpixel 134x may correspond to a red (R) subpixel 1341, a green (G) subpixel 1342, and / or a blue (B) subpixel 1343.

[0529] In some non-limiting examples, each transparent region 1820 may be substantially transparent, allowing light to pass through the entire cross-sectional side.

[0530] Looking at Figure 18B, an example of a cross-sectional view of version 1800 of device 600 may be shown, taken along line 18B-18B in Figure 18A. In the figure, device 1800 may be shown as including a substrate 10, a TFT insulating layer 709, and a first electrode 620 formed on the surface of the TFT insulating layer 709. The substrate 10 may include a base substrate 612 (not shown for simplicity of illustration) and / or substantially at least one TFT structure 701 positioned beneath it, corresponding to and driving each subpixel 134x electrically coupled to the first electrode 620. PDL 740 may be formed in a non-emitting region 1220 above the substrate 10, defining an emitting region 1210 corresponding to each subpixel 134x above the corresponding first electrode 620. PDL 740 may cover the edges of the first electrode 620.

[0531] In some non-limiting examples, at least one semiconducting layer 630 may be deposited over the exposed area of ​​the first electrode 620 and, in some non-limiting examples, over at least a portion of the surrounding PDL 740.

[0532] In some non-limiting examples, the second electrode 640 may be deposited above at least one semiconducting layer 630, including above the pixel region 1810 for forming its subpixels 134x, and in some non-limiting examples, at least partially above the surrounding PDL 740 within the transmissive region 1820.

[0533] In some non-limiting examples, the NIC 110 may be selectively deposited on top of the first portion 301 of the device 1800, including both the pixel region 1810 and the transparent region 1820, but not including the region of the second electrode 640 corresponding to the auxiliary electrode 1150 which includes its second portion 302.

[0534] In some non-limiting examples, the entire exposed layer surface 11 of device 1800 may then be exposed to a vapor flux 332 of a deposit material 331, which may be Mg in some non-limiting examples. The deposit layer 130 is selectively deposited above a second portion of a second electrode 640 that may substantially lack NIC 110, and may electrically couple with an uncoated portion of the second electrode 640, and may physically contact it in some non-limiting examples. It can form 150.

[0535] At the same time, the transparent region 1820 of device 1800 may remain substantially devoid of any material that could substantially affect the transmission of light through it. In particular, as shown in the figure, the TFT structure 701 and the first electrode 620 may be positioned within the lower cross-sectional side of their corresponding subpixels 134x and, together with the auxiliary electrode 1150, may be positioned beyond the transparent region 1820. As a result, these components cannot attenuate or obstruct the transmission of light through the transparent region 1820. In some non-limiting examples, such arrangement may prevent all (sub)pixels 1810 / 134x from emitting light, and thus, when a transparent device 1800 is fabricated, it may be possible for a person viewing the device 1800 from a typical viewing distance to see through the device 1800.

[0536] Although not shown in the figure, in some non-limiting examples, device 1800 may further include an NPC520 disposed between the auxiliary electrode 1150 and the second electrode 640. In some non-limiting examples, the NPC520 may also be disposed between the NIC110 and the second electrode 640.

[0537] In some non-limiting examples, the NIC 110 may be formed simultaneously with at least one semiconducting layer 630. In a non-limiting example, at least one material used to form the NIC 110 may also be used to form at least one semiconducting layer 630. In such non-limiting examples, some steps for manufacturing the device 1800 may be reduced.

[0538] Those skilled in the art will understand that, in some non-limiting examples, various other layers and / or coatings, including but not limited to those forming at least one semiconducting layer 630 and / or a second electrode 640, may cover a portion of the transparent region 1820, particularly if such layers and / or coatings are substantially transparent. In some non-limiting examples, the PDL740 may have a reduced thickness, including, but not limited to, forming wells therein that may be similar to wells defined for the emission region 1210 in some non-limiting examples, to further facilitate light transmission through the transparent region 1820.

[0539] Those skilled in the art will understand that (sub)pixel 1810 / 134x arrangements other than those shown in Figures 18A and 18B may be adopted in some non-limiting examples.

[0540] Those skilled in the art will understand that arrangements of the auxiliary electrodes 1150 other than those shown in Figures 18A and 18B may be adopted in some non-limiting examples. In a non-limiting example, the auxiliary electrodes 1150 may be positioned between the pixel region 1810 and the transmissive region 1820. In a non-limiting example, the auxiliary electrodes 1150 may be positioned between subpixels 134x within the pixel region 1810.

[0541] Looking at Figure 19A, an example of a plan view of a transparent version of device 600, generally shown as 1900, may be shown. In some non-limiting examples, device 1900 may be an AMOLED device having multiple pixel regions 1810 and multiple transparent regions 1820. Device 1900 may differ from device 1800 in that the auxiliary electrode 1150 is not located between the pixel regions 1810 and / or transparent regions 1820.

[0542] In some non-limiting examples, each pixel region 1810 may contain multiple emission regions 1210, each corresponding to a subpixel 134x. In some non-limiting examples, each subpixel 134x may be a red (R) subpixel 1341, a green (G) subpixel 1342, and so on. , and / or may correspond to B (blue) subpixel 1343.

[0543] In some non-limiting examples, each transparent region 1820 may be substantially transparent, allowing light to pass through the entire cross-sectional side.

[0544] Looking at 19B, an example of a cross-sectional view of device 1900 taken along line 19-19 in Figure 19A may be shown. In the figure, device 1900 may be shown as including a substrate 10, a TFT insulating layer 709, and a first electrode 620 formed on the surface of the TFT insulating layer 709. The substrate 10 may include a base substrate 612 (not shown for the sake of simplicity of illustration) and / or substantially at least one TFT structure 701 positioned beneath it, corresponding to each subpixel 134x electrically coupled to its first electrode 620, and at least one TFT structure 701 for driving it. PDL 740 may be formed in a non-emitting region 1220 above the substrate 10 and define an emitting region 1210 corresponding to each subpixel 134x above the corresponding first electrode 620. PDL 740 covers the edge of the first electrode 620.

[0545] In some non-limiting examples, at least one semiconducting layer 630 may be deposited over the exposed area of ​​the first electrode 620 and, in some non-limiting examples, over at least a portion of the surrounding PDL 740.

[0546] In some non-limiting examples, the first deposition layer 130a may be deposited above at least one semiconducting layer 630, including above the pixel region 1810 for forming its subpixels 134x and above the surrounding PDL 740 within the translucent region 1820. In some non-limiting examples, the thickness of the first deposition layer 130a may be relatively thin such that the presence of the first deposition layer 130a over the translucent region 1820 does not substantially attenuate the transmission of light through it. In some non-limiting examples, the first deposition layer 130a may be deposited using open-mask and / or mask-free deposition processes.

[0547] In some non-limiting examples, the NIC110 may be selectively deposited on top of a first portion of the device 1900, including a permeable region 1820.

[0548] In some non-limiting examples, the entire exposed layer surface 11 of the device 1900 is then exposed to a vapor flux 332 of a deposition material 331, which may be Mg in some non-limiting examples, so that the second deposition layer 130b can be selectively deposited on top of a second portion 302 of the first deposition layer 130a, which may substantially lack the NIC 110, or in some non-limiting examples, a pixel region 1810.

[0549] In some non-limiting examples, the thickness of the first deposit layer 130a may be less than the thickness of the second deposit layer 130b. In this way, relatively high transmittance can be maintained within the transmittance region 1820 in which only the first deposit layer 130a can extend. In some non-limiting examples, the thickness of the first deposit layer 130a may be less than approximately 30 nm, 25 nm, 20 nm, 15 nm, 10 nm, 8 nm, and / or 5 nm. In some non-limiting examples, the thickness of the second deposit layer 130b may be less than approximately 30 nm, 25 nm, 20 nm, 15 nm, 10 nm, or 8 nm.

[0550] Therefore, in some non-limiting examples, the thickness of the second electrode 640 may be less than approximately 40 nm, and / or in some non-limiting examples, it may be approximately 5–30 nm, 10–25 nm, or 15–25 nm.

[0551] In some non-limiting examples, the thickness of the first sedimentary layer 130a may exceed the thickness of the second sedimentary layer 130b. In some non-limiting examples, the thicknesses of the first sedimentary layer 130a and the second sedimentary layer 130b may be substantially the same.

[0552] In some non-limiting examples, at least one deposit material 331 used to form the first deposit layer 130a may be substantially the same as at least one deposit material 331 used to form the second deposit layer 130b. In some non-limiting examples, such at least one deposit material 331 may be substantially as described herein with respect to the first electrode 620, the second electrode 640, the auxiliary electrode 1150, and / or their deposit layers 130.

[0553] In some non-limiting examples, the transparent region 1820 of device 3100 may remain substantially devoid of any material that could substantially suppress the transmission of light through it. In particular, as shown in the figure, the TFT structure and / or the first electrode 620 may be positioned within the lower cross-sectional side of the corresponding subpixels 134x and beyond the transparent region 1820. As a result, these components cannot attenuate or obstruct the transmission of light through the transparent region 1820. In some non-limiting examples, such arrangement may allow a person viewing device 1900 from a typical viewing distance to see through device 3100 when fabricating an AMOLED device 1900 in which (sub)pixels 1810 / 134x do not emit light and are therefore transparent.

[0554] Although not shown in the figure, in some non-limiting examples, device 1900 may further include an NPC520 disposed between the second deposit layer 130b and the first deposit layer 130a. In some non-limiting examples, the NPC520 may also be disposed between the NIC110 and the first deposit layer 130a.

[0555] In some non-limiting examples, the NIC 110 may be formed simultaneously with at least one semiconducting layer 630. In a non-limiting example, at least one material used to form the NIC 110 may also be used to form at least one semiconducting layer 630. In such non-limiting examples, some steps for manufacturing the device 1900 may be reduced.

[0556] Those skilled in the art will understand that, in some non-limiting examples, various other layers and / or coatings, including but not limited to those forming at least one semiconducting layer 630 and / or a first deposited layer 130a, may cover a portion of the transparent region 1820, particularly if such layers and / or coatings are substantially transparent. In some non-limiting examples, the PDL740 may have a reduced thickness, including, but not limited to, forming wells therein that may be similar to wells defined for the emission region 1210 in some non-limiting examples, to further facilitate light transmission through the transparent region 1820.

[0557] Those skilled in the art will understand that (sub)pixel 1810 / 134x arrangements other than those shown in Figures 19A and 19B may be adopted in some non-limiting examples.

[0558] Now, looking at Figure 19C, an example of a cross-sectional view of a different version 1910 of device 600 may be shown, taken along line 19-19 in Figure 19A. In the figure, device 1910 may be shown as comprising a substrate 10, a TFT insulating layer 709, and a first electrode 620 formed on the surface of the TFT insulating layer 709. The substrate 10 is below a base substrate 612 (not shown for the sake of simplicity of illustration), and / or substantially at least one TFT structure 701 The PDL 740 may include at least one TFT structure 701 for positioning and driving each subpixel 134x that is electrically coupled to the first electrode 620. The PDL 740 may be formed in a non-emitting region 1220 above the substrate 10 and define an emission region 1210 that also corresponds to each subpixel 134x above the corresponding first electrode 620. The PDL 740 may cover the edge of the first electrode 620.

[0559] In some non-limiting examples, at least one semiconducting layer 630 may be deposited over the exposed area of ​​the first electrode 620 and, in some non-limiting examples, over at least a portion of the surrounding PDL 740.

[0560] In some non-limiting examples, the NIC 110 may be selectively deposited on top of a first portion 101 of the device 1910, including a permeable region 1820.

[0561] In some non-limiting examples, the deposited layer 130 may be deposited on top of at least one semiconducting layer 630, which includes above the pixel region 1810 for forming its subpixels 134x, but does not include above the surrounding PDL 740 within the transparent region 1820. In some non-limiting examples, the first deposited layer 130a may be deposited using an open-mask and / or mask-free deposition process. In some non-limiting examples, such deposition may be carried out by selectively depositing the deposited layer 130 on top of the NIC 110, on a second portion 102 of at least one semiconducting layer 630 which in some non-limiting examples may substantially lack the pixel region 1810.

[0562] In some non-limiting examples, the transparent region 1820 of device 1910 may remain substantially devoid of any material that could substantially affect the transmission of light through it. In particular, as shown in the figure, the TFT structure 701 and / or the first electrode 620 may be positioned within the lower cross-sectional side of the corresponding subpixels 134x and beyond the transparent region 1820. As a result, these components cannot attenuate or obstruct the transmission of light through the transparent region 1820. In some non-limiting examples, such arrangement may allow a person viewing device 1910 from a typical viewing distance to see through device 3110, when fabricating an AMOLED device 3110 that does not emit (sub)pixels 1810 / 134x and is therefore transparent.

[0563] By providing a permeable region 1820 that may not contain and / or substantially lack the deposited layer 130, the transmittance in such a region can be preferably enhanced in some non-limiting examples, as an example compared to device 1900 in Figure 19B.

[0564] Although not shown in the figure, in some non-limiting examples, device 1910 may further include an NPC520 disposed between the deposited layer 130 and at least one semiconducting layer 630. In some non-limiting examples, the NPC520 may also be disposed between the NIC110 and the PDL740.

[0565] In some non-limiting examples, the NIC110 may be formed simultaneously with at least one semiconducting layer 630. In a non-limiting example, at least one material used to form the NIC110 may also be used to form at least one semiconducting layer 630. In such non-limiting examples, some steps for manufacturing the device 3110 may be reduced.

[0566] Those skilled in the art will understand that, in some non-limiting examples, various other layers and / or coatings, including but not limited to those forming at least one semiconducting layer 630 and / or deposited layer 130, may cover a portion of the transparent region 1820, particularly if such layers and / or coatings are substantially transparent. In some non-limiting examples, the PDL 740 may have a reduced thickness, including, but not limited to, forming wells therein that may be similar to wells defined for the emission region 1210 in some non-limiting examples, to further facilitate light transmission through the transparent region 1820.

[0567] Those skilled in the art will understand that (sub)pixel 1810 / 134x arrangements other than those shown in Figures 19A and 19C may be adopted in some non-limiting examples.

[0568] Selective deposition to adjust the electrode thickness above the emission region. As discussed above, the observable microcavity effect can be influenced by adjusting the thickness of the electrodes 620, 640, and 1150 on and around the lateral surfaces 710 of the emission region 1210 for (sub)pixels 1810 / 134x. In some non-limiting examples, the selective deposition of at least one deposition layer 130 through the deposition of at least one patterning coating 210, such as NIC 110 and / or NPC 520, into the lateral surfaces 710 of the emission region 1210 corresponding to different subpixels 134x in the pixel region 1810 may control and / or adjust the optical microcavity effect in each emission region 1210 to optimize a desired optical microcavity effect on a subpixel 134x basis, including, but not limited to, the angular dependence of the emission spectrum, luminosity, and / or the brightness and / or color shift of the emitted light.

[0569] Such effects can be controlled by independently adjusting the thickness and / or several depositional layers 130 located in each emission region 1210 of subpixel 134x. As a non-limiting example, the thickness of a second electrode 640 located above a B (blue) subpixel 1343 may be less than the thickness of a second electrode 640 located above a G (green) subpixel 1342, and the thickness of a second electrode 640 located above a G (green) subpixel 1342 may be less than the thickness of a second electrode 640 located above a R (red) subpixel 1341.

[0570] In some non-limiting examples, such effects can be controlled even more significantly by independently adjusting the thickness and / or number of patterning coatings 210, which include not only the deposited layer 130 but also portions of each emission region 1210 of the subpixels 134x, as well as the NIC 110 and / or NPC 520 deposited on those areas.

[0571] As shown by the non-limiting examples in Figure 20, in some non-limiting examples, in version 2000 of the OLED display device 600 having different emission spectra, there may be deposited layers 330 of varying thicknesses selectively deposited for emission regions 1210 corresponding to subpixels 134x. In some non-limiting examples, a first emission region 1210a may correspond to a subpixel 134x configured to emit light of a first wavelength and / or emission spectrum, and / or in some non-limiting examples, a second emission region 1210b may correspond to a subpixel 134x configured to emit light of a second wavelength and / or emission spectrum. In some non-limiting examples, the device 600 may include a third emission region 1210c which may correspond to a subpixel 134x configured to emit light of a third wavelength and / or emission spectrum.

[0572] In some non-limiting examples, the first wavelength is one of the second wavelength and / or third wavelength. It may be less than, greater than, and / or equal to at least one of the first wavelength and / or the third wavelength. In some non-limiting examples, the second wavelength may be less than, greater than, and / or equal to at least one of the first wavelength and / or the third wavelength. In some non-limiting examples, the third wavelength may be less than, greater than, and / or equal to at least one of the first wavelength and / or the second wavelength.

[0573] In some non-limiting examples, the device 2000 may also include at least one additional emission region 1210 (not shown) which may be configured to emit light having a wavelength and / or emission spectrum substantially identical to at least one of the first emission region 1210a, the second emission region 1210b, and / or the third emission region 1210c.

[0574] In some non-limiting examples, the NIC 110 may be selectively deposited using a shadow mask 215, which can also be used to deposit at least one semiconducting layer 630 in the first emission region 1210a. In some non-limiting examples, such shared use of the shadow mask 215 can modulate the optical microcavity effect for each subpixel 134x in a cost-effective manner.

[0575] The device 2000 may be described as comprising a substrate 10, a TFT insulating layer 709, and a plurality of first electrodes 620a to 620c formed on the exposed layer surface 11 of the TFT insulating layer 709.

[0576] The substrate 10 may include a base substrate 612 (not shown for the sake of simplicity of illustration) and / or substantially at least one TFT structure 701a-701c positioned beneath and for driving corresponding emission regions 1210a-2210c, each having corresponding subpixels 134x electrically coupled to its associated first electrodes 620a-620c. PDLs 740a-740d may be formed above the substrate 10 to define the emission regions 1210a-1210c. PDLs 740a-740d may cover the edges of each of their first electrodes 620a-620c.

[0577] In some non-limiting examples, at least one semiconducting layer 630a-630c may be deposited over the exposed region of each of their first electrodes 620a-620c, and, in some non-limiting examples, over at least a portion of the surrounding PDL 740a-740d.

[0578] In some non-limiting examples, the first deposited layer 130a may be deposited above at least one semiconducting layer 630a-630c. In some non-limiting examples, the first deposited layer 130a may be deposited using an open-mask and / or mask-free deposition process. In some non-limiting examples, such deposition may be carried out by exposing the entire exposed layer surface 11 of the device 2000 to a vapor flux 332 of a deposition material 331, which may be Mg in some non-limiting examples, to deposit the first deposited layer 130a above at least one semiconducting layer 630a-1030c, thereby forming a first layer of a second electrode 640a (not shown), which may be a common electrode for at least a first emission region 1210a in some non-limiting examples. Such a common electrode has a first thickness t in the first emission region 1210a c1 It may have a first thickness t. c1 This can correspond to the thickness of the first sedimentary layer 130a.

[0579] In some non-limiting examples, the first NIC 110a may be selectively deposited on top of the first portion 101 of the device 3300, which includes the first emission region 1210a.

[0580] In some non-limiting examples, the second deposit layer 130b may be deposited on top of the device 3300. In some non-limiting examples, the second deposit layer 130b may be deposited using open-mask and / or mask-free deposition processes. In some non-limiting examples, such deposition may be carried out by depositing the second deposition layer 130b on top of the first deposition layer 130a, which may substantially lack the first NIC 110a, and in some examples, at least a portion of the non-emission region 1220 where the second and third emission regions 1210b, 1210c, and / or PDL 740a-740d are located, by exposing the entire exposed layer surface 11 of the device 3300 to the vapor flux 332 of the deposition layer 331, which may be Mg in some non-limiting examples, so that the second deposition layer 130b is deposited on top of the first deposition layer 130a, which may substantially lack the first NIC 110a, and in some examples, at least a portion of the non-emission region 1220 where the second and third emission regions 1210b, 1210c, and / or PDL 740a-740d are located. c2 It may have a second thickness t. c2 This can correspond to the total thickness of the first sedimentary layer 130a and the second sedimentary layer 130b, and in some non-limiting examples, the first thickness t c1 It may exceed that.

[0581] In some non-limiting examples, the second NIC 110b may be selectively deposited above a further first portion 101 of the device 2000, which includes the second emission region 1210b.

[0582] In some non-limiting examples, the third deposit layer 130c may be deposited on top of the device 2000. In some non-limiting examples, the third deposit layer 130c may be deposited using open-mask and / or mask-free deposition processes. In some non-limiting examples, such deposition may be carried out by depositing the third deposition layer 130c on a second deposition layer 130b which may substantially lack at least a portion of the non-emission region 1220 in which the third deposition layer 1210c and / or PDL 740a~740d are located, by exposing the entire exposed layer surface 11 of the device 3300 to the vapor flux 332 of the deposition layer 331 which may be Mg in some non-limiting examples, so that the third deposition layer 130c is deposited on a further second portion 102 of the second deposition layer 130b which substantially lacks the second NIC 110b, and in some examples substantially lacks at least a portion of the third emission region 1210c and / or the non-emission region 1220 in which the PDL 740a~740d are located. c3 It may have a third thickness t. c3 This can correspond to the total thickness of the first sedimentary layer 130a, the second sedimentary layer 130b, and the third sedimentary layer 130c, and in some non-limiting examples, the first thickness t c1 and the second thickness t c2 It may exceed one or both of the following.

[0583] In some non-limiting examples, a third NIC 110c may be selectively deposited on top of an additional first portion 101 of the device 3300, including a third emission region 1210b.

[0584] In some non-limiting examples, at least one auxiliary electrode 1150 may be located within the non-emission region 1220 of device 2000 between its adjacent emission regions 1210a-1210c, and in some non-limiting examples, above the PDL 740a-740d. In some non-limiting examples, the deposition layer 130 used to deposit at least one auxiliary electrode 1150 may be deposited using an open-mask and / or mask-free deposition process. In some non-limiting examples, such deposition may occur on the entire exposed layer surface 11 of device 3300, such that the deposition layer 130 is deposited on an additional second portion 102 which includes exposed portions of the first deposition layer 130a, second deposition layer 130b, and / or third deposition layer 130c, which may substantially lack any of the first NIC 110a, second NIC 110b, and / or third NIC 110c, to form at least one auxiliary electrode 1150. In some non-limiting examples, this may be done by exposing the deposit layer 331, which may be Mg, to a vapor flux 332 to deposit the deposit layer 130 above the exposed portions of the first deposit layer 130a, the second deposit layer 130b, and the third deposit layer 130c, which may substantially lack any of the first NIC 110a, the second NIC 110b, and / or the third NIC 110c. At least one auxiliary electrode 1150 may each be electrically coupled to one of the second electrodes 640a to 1040c. In some non-limiting examples, at least one auxiliary electrode 1150 may each be in physical contact with such second electrodes 640a to 1040c.

[0585] In some non-limiting examples, the first emission region 1210a, the second emission region 1210b, and the third emission region 1210c may substantially lack a closed coating 140 of the deposit material 331 used to form at least one auxiliary electrode 1150.

[0586] In some non-limiting examples, at least one of the first deposition layer 130a, the second deposition layer 130b, and / or the third deposition layer 130c may be transparent and / or substantially transparent in at least a portion of the visible wavelength range of the electromagnetic spectrum. Thus, the second deposition layer 130b and / or the third deposition layer 130a (and / or any additional deposition layer 330) may be disposed on top of the first deposition layer 130a to form multilayer coated electrodes 620, 640, 1150 which may also be transparent and / or substantially transparent in at least a portion of the visible wavelength range of the electromagnetic spectrum. In some non-limiting examples, the transmittance of any one of the first deposit layer 130a, the second deposit layer 130b, the third deposit layer 130c, any additional deposit layer 330, and / or the multilayer coated electrodes 620, 640, 1150 may exceed about 30%, 40%, 45%, 50%, 60%, 70%, 75%, or 80% in at least a portion of the visible spectrum.

[0587] In some non-limiting examples, relatively high transmittance can be maintained by making the thickness of the first deposit layer 130a, the second deposit layer 130b, and / or the third deposit layer 130c relatively thin. In some non-limiting examples, the thickness of the first deposit layer 130a may be about 5-30 nm, 8-25 nm, or 10-20 nm. In some non-limiting examples, the thickness of the second deposit layer 130b may be about 1-25 nm, 1-20 nm, 1-15 nm, 1-10 nm, or 3-6 nm. In some non-limiting examples, the thickness of the third deposit layer 130c may be about 1-25 nm, 1-20 nm, 1-15 nm, 1-10 nm, or 3-6 nm. In some non-limiting examples, the thickness of the multilayer coated electrode formed by a combination of the first deposition layer 130a, the second deposition layer 130b, the third deposition layer 130c, and / or an additional deposition layer 330 may be approximately 6–35 nm, 10–30 nm, 10–25 nm, or 12–18 nm.

[0588] In some non-limiting examples, the thickness of at least one auxiliary electrode 1150 may exceed the thickness of the first deposition layer 130a, the second deposition layer 130b, the third deposition layer 130c, and / or the common electrode. In some non-limiting examples, the thickness of at least one auxiliary electrode 1150 may exceed approximately 50 nm, 80 nm, 100 nm, 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, 700 nm, 800 nm, 1 μm, 1.2 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm.

[0589] In some non-limiting examples, at least one auxiliary electrode 1150 may be substantially opaque and / or not transparent. However, since at least one auxiliary electrode 1150 may be provided to a non-emission region 1220 of the device 3300 in some non-limiting examples, at least one auxiliary electrode 1150 may not cause or contribute to significant optical interference. In some non-limiting examples, the transmittance of at least one auxiliary electrode 1150 may be less than about 50%, 70%, 80%, 85%, 90%, or 95% in at least a portion of the visible spectrum.

[0590] In some non-limiting examples, at least one auxiliary electrode 1150 may absorb at least a portion of the visible spectrum.

[0591] In some non-limiting examples, the thicknesses of the first NIC 110a, second NIC 110b, and / or third NIC 110c, which are arranged in the first emission region 1210a, the second emission region 1210b, and / or third emission region 1210c, may vary according to the color and / or emission spectrum of the light emitted by each emission region 1210a to 2210c. In some non-limiting examples, the thickness of the first NIC 110a is the same as the thickness of the first NIC t n1 The second NIC110b may have a second NIC thickness t n2 It may have and / or the third NIC110c has a third NIC thickness t n3 It may have the following characteristics: In some non-limiting examples, the first NIC thickness t n1 , second NIC thickness tn2 , and / or third NIC thickness t n3 They can be substantially the same. In some non-restrictive examples, the first NIC thickness t n1 , second NIC thickness t n2 , and / or third NIC thickness t n3 They can be different from one another.

[0592] In some non-limiting examples, device 2000 may also include any number of emission regions 1210a-1210c and / or its (sub)pixels 1810 / 134x. In some non-limiting examples, the device may include multiple pixels 1810, each pixel 1810 containing two, three, or more subpixels 134x.

[0593] Those skilled in the art will understand that the specific arrangement of (sub)pixels 1810 / 134x may vary depending on the device design. In some non-limiting examples, subpixels 134x may be arranged according to known arrangement schemes, including but not limited to RGB side-by-side, diamond, and / or PenTile®.

[0594] Conductive coating for electrically coupling the electrode to the auxiliary electrode Figure 21 may show a cross-sectional view of an example of version 2100 of device 600. Device 2100 may include an emission region 1210 and an adjacent non-emission region 1220 on its lateral side.

[0595] In some non-limiting examples, the emission region 1210 may correspond to subpixels 134x of the device 2100. The emission region 1210 may have a substrate 10, a first electrode 620, a second electrode 640, and at least one semiconducting layer 630 disposed between them.

[0596] The first electrode 620 may be disposed on the exposed layer surface 11 of the substrate 10. The substrate 10 may include a TFT structure 701 that can be electrically coupled to the first electrode 620. The edges and / or periphery of the first electrode 620 may generally be covered with at least one PDL 740.

[0597] The non-emission region 1220 may have an auxiliary electrode 1150, and a first portion of the non-emission region 1220 may have a protruding structure 2160 positioned to project and overlap the lateral surface of the auxiliary electrode 1150. The protruding structure 2160 may extend laterally to provide a protected region 2165. In a non-limiting example, the protruding structure 2160 may recess in and / or near at least one side of the auxiliary electrode 1150 to provide the protected region 2165. As shown, the protected region 2165 may, in some non-limiting examples, correspond to a region of the surface of the PDL 740 that may overlap with the lateral projection of the protruding structure 2160. The non-emission region 1220 may further include a deposit layer 130 disposed in the protected region 2165. The deposit layer 130 may electrically couple the auxiliary electrode 1150 with the second electrode 640.

[0598] NIC110a is positioned in the emission region 1210 above the exposed layer surface 11 of the second electrode 640. In some non-limiting examples, the exposed layer surface 11 of the protruding structure 2160 may be coated with the remaining conductive thin film from the deposition of the conductive thin film to form a second electrode 640. In some non-limiting examples, the exposed layer surface 11 of the remaining conductive thin film may be coated with the remaining NIC110b from the deposition of NIC110.

[0599] However, due to the lateral protrusion of the protruding structure 2160 above the protected region 2165, the protected region 2165 may substantially lack the NIC 110. Therefore, if the deposited layer 130 can be deposited on the device 3400 after the deposition of the NIC 110, the deposited layer 130 may be deposited on and / or migrate onto the protected region 2165 to couple the auxiliary electrode 1150 to the second electrode 640.

[0600] Those skilled in the art will understand that non-limiting examples are shown in Figure 21 and that various modifications may be apparent. In a non-limiting example, the protruding structure 2160 may provide a protected region 2165 along at least two of its sides. In some non-limiting examples, the protruding structure 2160 may be omitted, and the auxiliary electrode 1150 may include a recessed portion that can define the protected region 2165. In some non-limiting examples, the auxiliary electrode 1150 and the deposited layer 130 may be disposed directly on the surface of the substrate 10 instead of the PDL 740.

[0601] Selective deposition of optical coatings In some non-limiting examples, a device (not shown) that may be an optoelectronic device may include a substrate 10, a NIC 110, and an optical coating. The NIC 110 may cover a first lateral portion 101 of the substrate 10. The optical coating may cover a second lateral portion 102 of the substrate. At least a portion of the NIC 110 may substantially lack the closed coating 140 of the optical coating.

[0602] In some non-limiting examples, optical coatings can be used to modify the optical properties of light transmitted, emitted, and / or absorbed by devices, including but not limited to plasmon modes. In non-limiting examples, optical coatings may be used as optical filters, refractive index matching coatings, optical extraction coatings, scattering layers, diffraction gratings, or as part of these.

[0603] In some non-limiting examples, optical coatings can be used to modulate at least one optical microcavity effect in a device, including but not limited to modulating the total optical path length and / or its refractive index n. At least one optical property of a device may be influenced by modulating at least one optical microcavity effect, including but not limited to output light, including but not limited to the angular dependence of luminance and / or its color shift. In some non-limiting examples, the optical coating may be a non-electrical component, i.e., the optical coating may not be configured to conduct and / or transmit current during normal device operation.

[0604] In some non-limiting examples, the optical coating may be formed from any deposition material 331 and / or employ any mechanism for depositing the deposition layer 130 described herein.

[0605] Partitions and recesses Figure 22 may show a cross-sectional view of an example of version 2200 of device 600. Device 2200 may include a substrate 10 having an exposed layer surface 11. The substrate 10 may include at least one TFT structure 701. In some non-limiting examples, the substrate 10 may include at least one TFT structure 701 as described herein. It can be formed by depositing and patterning a series of thin films during the manufacturing process.

[0606] The device 2200 may include, on its lateral side, an emission region 1210 having an associated lateral side 710, and at least one adjacent non-emission region 1220, each having an associated lateral side 720. The exposed layer surface 11 of the substrate 10 in the emission region 1210 may be provided with a first electrode 620 that can be electrically coupled to at least one TFT structure. The PDL 740 may be provided on the exposed layer surface 11 such that the PDL 740 covers the exposed layer surface 11 and at least one edge and / or periphery of the first electrode 620. In some non-limiting examples, the PDL 740 may be provided on the lateral side 720 of the non-emission region 1220. The PDL 740 may define a valley-shaped configuration that can provide an opening that can generally correspond to the lateral side 710 of the emission region 1210, from which the layer surface of the first electrode 620 can be exposed. In some non-limiting examples, device 2200 may include multiple such apertures defined by PDL400, each of which may correspond to a (sub)pixel 1810 / 134x area of ​​device 2200.

[0607] As shown, in some non-limiting examples, the partition 2221 may be provided on the exposed layer surface 11 of the lateral side surface 720 of the non-emission area 1220 and may define a protected area 2165 such as a recess 2222, as described herein. In some non-limiting examples, the recess 2222 may be formed by making the edges of the lower section of the partition 2221 concave, staggered, and / or offset with respect to the edges of the upper section of the partition 2221 which may overlap and / or protrude beyond the recess 2222.

[0608] In some non-limiting examples, the lateral surface 710 of the emission region 1210 may include at least one semiconducting layer 630 disposed above the first electrode 620, a second electrode 640 disposed above the at least one semiconducting layer 630, and a NIC 110 disposed above the second electrode 640. In some non-limiting examples, the at least one semiconducting layer 630, the second electrode 640, and the NIC 110 may extend laterally to cover at least the lateral surface 720 of a portion of at least one adjacent non-emission region 1220. In some non-limiting examples, as shown, the at least one semiconducting layer 630, the second electrode 640, and the NIC 110 may be disposed on at least a portion of at least one PDL 740 and at least a portion of the partition 2221. Therefore, as shown, the lateral surfaces 710 of the emission region 1210, a portion of at least one adjacent non-emission region 1220, a portion of at least one PDL 740, and a lateral surface 720 of at least a portion of the partition 2221 may together constitute a first portion 101 in which the second electrode 640 may be located between the NIC 110 and at least one semiconducting layer 630.

[0609] The auxiliary electrode 1150 may be disposed adjacent to and / or inside the recess 2222, and the deposited layer 130 may be arranged so as to electrically couple the auxiliary electrode 1150 with the second electrode 640. Thus, as shown, the recess 2222 may include a second portion 102 on which the deposited layer 130 is disposed on the exposed layer surface 11.

[0610] In some non-limiting examples, when depositing the deposition layer 130, at least a portion of the evaporation flux 332 of the deposition material 331 may be directed at an angle not perpendicular to the transverse plane of the exposed layer surface 11. In some non-limiting examples, at least a portion of the evaporation flux 332 may be incident on the device 2100 at an incident angle of less than approximately 90°, 85°, 80°, 75°, 70°, 60°, or 50° with respect to such a transverse plane of the exposed layer surface 11. By directing the evaporation flux of the deposition material 331 (including at least a portion of it incident at an angle not perpendicular), the recess 2222 and / or at least one exposed layer surface 11 within it may be exposed to such evaporation flux.

[0611] In some non-limiting examples, the possibility that such evaporation flux 332 may be prevented from incident on the recess 2222 and / or at least one exposed layer surface 11 within it due to the presence of the partition 2221 can be reduced because at least a portion of such evaporation flux 332 may flow at a non-perpendicular angle of incidence.

[0612] In some non-limiting examples, at least a portion of such evaporation flux 332 may not be collimated. In some non-limiting examples, at least a portion of such evap...

Claims

[Claim 1] The invention described in the specification.

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