Embedded quantum random number generator (QRNG) based device
The integration of polarization-based QRNG modules with silicon nitride or silicon photonics materials addresses the challenges of size and cost in conventional QRNGs, resulting in compact and cost-effective devices suitable for consumer applications.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- II VI DELAWARE INC
- Filing Date
- 2025-01-24
- Publication Date
- 2026-05-27
AI Technical Summary
Conventional quantum random number generators (QRNGs) face challenges in achieving compact size and cost-effectiveness, particularly in consumer applications, due to bulky package sizes and high costs, which are not adequately addressed by existing package designs.
Implementing a polarization-based QRNG module with an optimized integrated structure using silicon nitride (SiN) or silicon photonics (SiP) materials, incorporating VCSEL or EEL light sources, polarizers, and photodetectors, to create a compact and cost-effective QRNG device.
The integrated structure results in a significantly smaller footprint and lower costs, enabling easier integration into chipsets while maintaining high entropy data rates, and addressing the limitations of conventional QRNGs.
Smart Images
Figure 2026087441000001_ABST
Abstract
Description
Technical Field
[0001]
[0001] Aspects of the present disclosure relate to optical communication-based solutions. More specifically, various implementations based on the present disclosure relate to methods and systems for implementing and utilizing an embedded quantum random number generator (QRNG)-based device.
Background Art
[0002]
[0002] The limitations and drawbacks of conventional random number generators will become apparent to those skilled in the art by comparison of such systems with some aspects of the present disclosure described in the remainder of the application with reference to the drawings.
Summary of the Invention
[0003]
[0003] A system and method for an embedded quantum random number generator (QRNG)-based device, substantially illustrated in at least one figure and / or described in relation thereto, are provided as more fully set forth in the claims.
[0004]
[0004] These and other advantages, aspects, and novel features of the present disclosure, as well as details of its illustrated embodiments, will be more fully understood from the following description and the drawings.
Brief Description of the Drawings
[0005] [Figure 1]
[0005] FIG. 1 illustrates an exemplary system incorporating a quantum random number generator (QRNG). [Figure 2]
[0006] FIG. 2 illustrates an exemplary integrated vertical cavity surface emitting laser (VCSEL)-based quantum random number generator (QRNG) device. [Figure 3]
[0007] FIG. 3 illustrates an exemplary integrated edge emitting laser (EEL)-based quantum random number generator (QRNG) device.
Mode for Carrying Out the Invention
[0006]
[0008] This disclosure covers solutions related to optical devices. In particular, implementations based on this disclosure cover enhanced solutions for quantum random number generation-based systems or devices. In this regard, random number generation is the process by which one or more (e.g., a series of) digits are generated in a manner in which these digits are not reasonably predictable, at least in a manner in which they are not as predictable as if they were randomly generated. Random number generation is typically performed using a random number generator (RNG). In this regard, a random number generator can be a hardware-based component in which random number generation can or may be performed based on and / or as a function of the current value of some attribute (e.g., a physical attribute) that is constantly changing in a manner that is substantially unmodelable. In the case of quantum random number generation, the attribute used in the random number generation process can be a quantum phenomenon associated with and / or tracked within the component. Such a component may be referred to as a quantum random number generator (QRNG).
[0007]
[0009] The solutions based on this disclosure provide a more compact and cost-effective QRNG, particularly through the use of a polarization-based module incorporating an optimized package design. In this regard, such package designs may combine suitable emitter components with other necessary components, particularly to facilitate polarization-based detection. In various embodiments, the emitter components may comprise a vertical-cavity surface-emitting laser (VCSEL) based device or an edge-emitting laser (EEL) based device. Nevertheless, although various embodiments are described herein as VCSEL or EEL-based implementations, this disclosure is not limited to the use of such emitters, and any suitable emitter component may be used as long as it can be configured to provide emission with suitable polarization characteristics (e.g., optical mode competition).
[0008]
[0010] For example, in VCSEL-based implementations, the polarization of the light emitted by the VCSEL can be used to facilitate quantum random number generation. In this regard, VCSELs without polarization stabilization capabilities can typically have their polarization reversed under certain driving conditions. If such a VCSEL is then carefully operated under pulsed conditions, the mode competition of the laser polarizations in each pulse can be considered to have quantum properties. The operating conditions can be carefully adjusted (e.g., by current level) so that polarization selection provides approximately a 50 / 50 probability. Thus, utilizing a polarizer set to the correct orientation, followed by a photodetector (e.g., a photodiode), can be a means of providing random quantum generated bits. EEL-based designs can operate in substantially similar ways, with mode selection based on the polarization of the light emitted by the EEL being similarly used to provide or otherwise facilitate quantum-like random number generation.
[0009]
[0011] However, polarization-based QRNG modules may need to meet particularly challenging requirements. For example, package height and size can be extremely difficult, especially in certain consumer applications. Therefore, if the package size or height exceeds a certain value (e.g., a 5mm thickness range), the package may become too bulky. Furthermore, cost and parallelization can also be issues in certain consumer applications and / or in specific operational requirements that may be needed (e.g., high-throughput entropy data rates). Existing conventional package designs may not be suitable for meeting such requirements.
[0010]
[0012] Accordingly, various exemplary embodiments based on this disclosure provide enhanced polarization-based QRNG modules, such modules incorporating optimized package designs by integrating the light emitters and other necessary components into an integrated structure. Such integrated structures result in a smaller footprint and lower costs compared to any existing solutions.
[0011]
[0013] Exemplary embodiments of this disclosure and related details are illustrated in the figures and will be described below with reference to the figures.
[0014] Figure 1 illustrates an example system incorporating a quantum random number generator (QRNG). System 100 is shown in Figure 1.
[0012]
[0015] System 100 may have a suitable circuit configuration configured to perform various functions and / or operations. For example, functions and / or operations may include processing functions and / or processing operations, memory functions and / or memory operations, control functions and / or control operations, communication functions and / or communication operations, and / or any combination thereof. Therefore, the circuit configuration in System 100 may include processing circuit configurations, memory circuit configurations, control circuit configurations, communication circuit configurations, and / or any combination thereof.
[0013]
[0016] In some cases, random number generation may be required to perform at least some of the functions and / or operations supported in system 100. As mentioned above, a dedicated component (a random number generator (RNG)) may be used to provide or otherwise facilitate random number generation. In this regard, various types of RNGs may be available or used. One exemplary type is a quantum random number generator (QRNG).
[0014]
[0017] For example, as illustrated in Figure 1, the system 100 includes a quantum random number generator (QRNG) 110 which may be configured to perform quantum random number generation. In this regard, as previously mentioned, in quantum random number generation, the random number generation process may be driven by quantum phenomena which may be associated with and / or tracked within the components.
[0015]
[0018] According to this disclosure, a quantum random number generator (e.g., QRNG110) can be implemented using an enhanced package design. Specifically, as stated above, the solution based on this disclosure provides a compact and cost-effective QRNG, particularly by using a polarization-based module for quantum random number generation, such as one based on polarization construction, and such a module incorporates an optimized package design, i.e., by using an integrated structure.
[0016]
[0019] In this regard, in some cases, quantum random number generators can be implemented in relatively small modules (e.g., with free-space optics / mirrors and polarizers). Such small modules may use VCSELs as light sources. In this regard, VCSELs can be used as bistable points of polarization. Thus, the polarization of each pulse can be determined by quantum gain competition for stimulated emission. Therefore, by projecting the readout (e.g., using polarizers and photodiodes), it is possible to obtain a value of "0" or "1" that can be used in the random number generation process. Thus, "quantum entropy" may provide one of the best types of quantum random number generators available.
[0017]
[0020] Nevertheless, such miniature modules can still have some limitations and drawbacks. For example, while the volume of such miniature modules can be relatively small (e.g., in the range of 3x5x5mm), such a volume can still be relatively bulky, especially in certain applications and / or platforms.
[0018]
[0021] Solutions based on this disclosure address such limitations and drawbacks, such as enabling further size reduction without compromising performance. In particular, in various embodiments based on this disclosure, a quantum random number generator (e.g., QRNG110) may be implemented using a polarization-based module having an integrated structure. The integrated structure may be a silicon nitride (SiN) or silicon photonics (SiP) based structure. Such integrated structures may be more desirable because they can be considerably more cost-effective than non-integrated structures. Furthermore, in many cases, parallelization may be possible in such integrated structure-based designs. The light source used in such an integrated structure may be a vertical-cavity surface-emitting laser (VCSEL) or an edge-emitting laser (EEL). Nevertheless, any suitable emitter may be used to provide light whose polarization can be used for quantum random number generation.
[0019]
[0022] For example, in some exemplary embodiments, a VCSEL-based integrated structure is used. In this regard, in such implementations, the VCSEL may be coupled to an optical waveguide structure (e.g., a SiP or SiN-based structure) and further comprises a polarizer and a photodetector (PD) (e.g., a photodiode). The VCSEL may be integrated into the waveguide structure or heterointegrated (e.g., coupled). The VCSEL may be arranged in an inverted configuration, i.e., the VCSEL is positioned above the waveguide structure but configured to allow downward radiation into the waveguide structure. To facilitate the coupling of light within the waveguide structure, the VCSEL may be coupled to appropriate components integrated into the waveguide (e.g., a grating, mirror, coupler, etc.). The VCSEL may include structures within the radiation window (e.g., a collimating lens or metalens, a phase shifter, etc.) to facilitate coupling. The VCSEL is single-mode (SM) or multimode. In this regard, SM operation may be more suitable for the polarizer, but this disclosure is not limited to the use of SM-based VCSELs. An exemplary VCSEL-based integration structure is illustrated in Figure 2, which will be explained in more detail.
[0020]
[0023] In some other exemplary embodiments, a light source configured to emit light laterally may be used. This may be in the case of having an edge-emitting laser (EEL), or may be a VCSEL configured to enable lateral emission (for example, reversing the VCSEL by 90°, arranging it on the side surface of the integrated structure, and arranging its upper radiation side against the waveguide). In such embodiments, the coupling may be performed directly using butt-joint coupling, or may be performed using a waveguide adapter to enhance the coupling. In some cases, lens coupling may also be possible. An exemplary EEL-based integrated structure is illustrated in FIG. 3 and will be described in more detail with respect to FIG. 3.
[0021]
[0024] In various embodiments, the polarizer used in an integrated structure (including both, for example, a VCSEL-based integrated structure (upper side or reversed) and an EEL-based integrated structure) may be a transverse electric / transverse magnetic (TE / TM) splitter configured to discard one polarization, or other polarizer schemes may be utilized. In some cases, the polarizer may be configured to operate within a range of temperatures and wavelengths that are compatible with a particular desired application.
[0022]
[0025] In various embodiments, the detection performed by the photodetector may be carried out using a silicon germanium (SiGe) integrated photodiode, a hetero-integrated photodiode, or any other suitable detection design / scheme. Nevertheless, regardless of what design / scheme is used, the photodetector needs to detect only one polarization after the polarizer.
[0023]
[0026] FIG. 2 illustrates an exemplary integrated vertical-cavity surface-emitting laser (VCSEL)-based quantum random number generator (QRNG) device. As shown in reference to FIG. 2, an integrated vertical-cavity surface-emitting laser (VCSEL)-based quantum random number generator (QRNG) device (hereinafter simply referred to as "device") 200 is illustrated.
[0024]
[0027] As illustrated in the exemplary embodiment illustrated in FIG. 2, device 200 includes structure 210, VCSEL 220, polarizer 230, photodetector (PD) 240, waveguide 250, and coupler 260.
[0025]
[0028] Structure 210 may comprise a silicon nitride (SiN) or silicon photonics (SiP) material that provides a structure in which the remaining components are integrated or embedded.
[0029] VCSEL 220 may comprise a semiconductor laser diode-based structure configured to provide vertical laser beam emission from the upper surface of a semiconductor structure. Within device 200, VCSEL 220 is configured in an epi-down manner, i.e., it can emit light downwardly towards structure 210. VCSEL 220 can be of any suitable type. In this regard, various types of VCSELs can be used and the present disclosure is not limited to a particular type, and thus any suitable VCSEL can be used. A VCSEL that emits on the lower side can also be used.
[0026]
[0030] For example, a VCSEL220 may have a distributed Bragg reflector (DBR) based structure, which may be configured to work with a mirror parallel to the upper surface and have an active region with one or more quantum wells for laser light generation in between. One DBR structure may be located on top of the substrate layer and the heat sink layer. A planar DBR mirror may have layers of alternating high refractive index (RI) based material and low refractive index (RI) based material. The thickness of each layer may be set to obtain high reflectivity. For example, if the thickness of the material is one-quarter of the laser wavelength, a light reflectivity of more than 99% can be obtained. Using high reflectivity can balance the short axial length of the gain region. In some implementations, p-type and n-type regions may be embedded between the DBR mirrors to form a diode junction. This may involve more complex semiconductor processes to ensure electrical contact to the active layer / region, but it may eliminate power losses in the DBR structure. Nevertheless, this disclosure is not limited to any specific VCSEL design or implementation, and any suitable design or implementation may be used.
[0027]
[0031] The polarizer 230 may comprise a suitable material for polarization selection, i.e., selectively passing or otherwise handling based on the polarization propagation of radiant energy, particularly light (e.g., a laser emitted by the VCSEL 220), as described herein. The polarizer 230 may be integrated into the structure itself (e.g., into the structure 210, in particular into the waveguide 250 in which the polarizer is used, or directly into the photodetector 240).
[0028]
[0032] The photodetector (PD) 120 may have a suitable circuit configuration for detecting light or other electromagnetic radiation. In this regard, various mechanisms and / or techniques may be used in providing the detection function offered by the photodetector, such as using the photoelectric effect or photochemical effect, spectral response, etc., and this disclosure is not limited to any particular type or mechanism. In an exemplary embodiment, the PD 240 may comprise a photodiode. The PD 240 may be integrated or embedded within the structure itself (e.g., structure 210), as illustrated in the embodiment illustrated in Figure 2. Alternatively, the PD 240 may be a separate structure (e.g., an end of the structure) coupled to (or otherwise attached to) the structure, where emitted light reaches after passing through a polarizer.
[0029]
[0033] Waveguide 250 may comprise a suitable material capable of enabling the propagation of radiated energy, particularly light (e.g., laser light emitted by VCSEL 220). As previously mentioned, waveguide 250 may be a SiP or SiN optical waveguide. In some cases, at least a portion of waveguide 250 may be omitted, such as a section between other components in the integrated structure, and these components (coupler 260, polarizer 230, and PD240) are directly mounted to each other. In some cases, the entire waveguide 250 may be omitted. Such omission may be possible when the integrated structure propagates the emitted light (from coupler 260) to polarizer 230, and then from polarizer 230 to PD240.
[0030]
[0034] The coupler 260 may comprise a material suitable for coupling light from the VCSEL 220 to a propagation path inside an integrated structure (e.g., the waveguide 250). In this regard, the coupler 260 may comprise a material suitable for enabling the reflection of radiated energy, particularly light. The coupler 260 may be configured, for example, to reflect light radiated downward by the VCSEL 220 so that the light propagates through the waveguide 250. For example, the coupler 260 may comprise a mirror positioned at a 45-degree angle to provide the necessary reflection. Nevertheless, the disclosure is not limited to such a component as a mirror, and therefore any suitable component using any suitable technique to provide the necessary handling (e.g., reflection) of the light radiated by the VCSEL 220 for propagation inside the waveguide 250 may be used.
[0031]
[0035] In an exemplary operation, device 200 may be used to provide and / or support quantum random number generation. In this regard, during such operation, VCSEL 220 may emit light downward, which is then reflected laterally through coupler 260 and propagates within waveguide 250. Polarization selection based on the emitted light may be used, for example, to facilitate quantum random number generation. In this regard, as previously mentioned, polarization selection, i.e., mode selection of polarization, can be considered to have quantum properties. Thus, the polarization of the light emitted by VCSEL 220 can be used as a quantum phenomenon to drive quantum random number generation. For this reason, polarizer 230 may be used to provide polarization selection applied to the light emitted by VCSEL 220, such as when the emitted light propagates through polarizer 230, and PD 240 provides polarization-based detection based on the polarization-selected output of polarizer 230, providing indications that indicate different quantum states depending on whether light passed (or blocked) by polarizer 230 is detected (or not detected), for example.
[0032]
[0036] The use of integrated structures, such as the VCSEL-based integrated structure of device 200, can produce improved devices. In this regard, as illustrated in Figure 2, a VCSEL-based integrated structure (similar to, for example, the one used in device 200) can be very compact, especially in the z-direction (i.e., considerably thinner than existing designs). In addition, some components may be integrated and / or embedded together for further integration (for example, the polarizer may be embedded inside the waveguide). Furthermore, such structures can be more easily integrated into chipsets. These characteristics result in very compact and cost-effective devices.
[0033]
[0037] However, one potential problem with VCSEL-based integration structures is the possibility of high levels of feedback to the VCSEL. Therefore, in some cases, VCSEL-based integration structures may be configured to mitigate such problems (for example, by adjusting various components).
[0034]
[0038] Figure 3 illustrates an exemplary integrated edge-emitting laser (EEL)-based quantum random number generator (QRNG) device. As shown with reference to Figure 3, an edge-emitting laser (EEL)-based quantum random number generator (QRNG) device (hereinafter simply referred to as the "device") 300 is illustrated.
[0035]
[0039] As illustrated in the exemplary embodiment shown in Figure 3, the device 300 comprises a structure 310, a quantum well (QW) laser 320, a polarizer 330, a photodetector (PD) 340, and a waveguide 350.
[0036]
[0040] Structure 310 may comprise a silicon nitride (SiN) or silicon photonics (SiP) material that provides a structure into which the remaining components are integrated or embedded.
[0041] QW laser 320 may comprise a semiconductor laser diode-based structure configured to provide laser beam emission from the side (edge) of a semiconductor structure. In particular, the semiconductor laser may comprise one or more thin layers of low-bandgap material sandwiched between high-bandgap layers (e.g., including n-type and p-type layers), so that one or more thin layers act as quantum wells and facilitate edge emission. QW laser 320 may be a distortion-free QW laser.
[0037]
[0042] The polarizer 330 may comprise a suitable material for selectively passing through or otherwise handling based on polarization selection, i.e., polarization propagation of radiant energy, particularly light (e.g., a laser emitted by the QW laser 320), as described herein. The polarizer 330 may be integrated into the structure itself (e.g., inside the structure 310, in particular inside the waveguide 350 in which the polarizer is used).
[0038]
[0043] The photodetector (PD) 340 may have a suitable circuit configuration for detecting light or other electromagnetic radiation. In this regard, various mechanisms and / or techniques may be used in providing the detection function offered by the photodetector, such as using the photoelectric effect or photochemical effect, spectral response, etc., and this disclosure is not limited to any particular type or mechanism. In exemplary embodiments, the PD 340 may comprise a photodiode. The PD 340 may be integrated or embedded within the structure itself (e.g., structure 310). Alternatively, the PD 340 may be a separate structure coupled to (or otherwise attached to) the structure (e.g., the end of waveguide 350), as illustrated in the embodiment illustrated in Figure 3.
[0039]
[0044] Waveguide 350 may comprise a suitable material capable of enabling the propagation of radiant energy, particularly light (e.g., laser light emitted by QW laser 320). As previously mentioned, waveguide 350 may be a SiP or SiN optical waveguide. As illustrated in the embodiment illustrated in Figure 3, waveguide 350 may be located on top of structure 310. This is because quantum well (QW) lasers (e.g., QW laser 320 illustrated in Figure 3) can typically incorporate a quantum well on the upper side of the laser device, requiring the addition of waveguide 350 on top of structure 310 to provide a propagation path. However, the disclosure is not limited to such designs. For example, in some cases, the QW laser 320 may be inverted and at least partially embedded in structure 310. In such a structure, waveguide 350 may be embedded in or integrated into structure 310.
[0040]
[0045] In an exemplary operation, device 300 may be used to provide and / or support quantum random number generation. In this regard, during such operation, the QW laser 320 may emit light laterally and thus propagate directly using the waveguide 350. Polarization selection based on the emitted light may be used, for example, to facilitate quantum random number generation. In this regard, as previously stated, polarization selection, i.e., mode selection of polarization, can be considered to have quantum properties. Thus, the polarization of the light emitted by the QW laser 320 can be used as a quantum phenomenon to drive quantum random number generation. For this reason, polarizer 330 may be used to provide polarization selection applied to the light emitted by the QW laser 320, such as when the emitted light propagates through polarizer 330, and PD 340 provides polarization-based detection based on the polarization-selected output of polarizer 330, and provides indications of different quantum states depending on whether light passed (or blocked) by polarizer 330 is detected (or not detected), for example.
[0041]
[0046] The use of integrated structures, such as the EEL-based integrated structure of device 300, can result in improved devices. In this regard, as illustrated in Figure 3, an EEL-based integrated structure (similar to the one used in device 300, for example) can be very compact, especially in the z-direction (i.e., considerably thinner than any existing design). In addition, some components may be integrated and / or embedded together for further integration (for example, a polarizer may be embedded inside the waveguide). Furthermore, such structures can be more easily integrated into a chipset. These characteristics result in very compact and cost-effective devices.
[0042]
[0047] However, one potential problem with EEL-based integrated structures is that, under certain conditions, there may be no means to control mode competition, such as when the EEL begins to deviate from mode degeneracy between TE and TM modes (for example, due to the effects of heating or strain). Therefore, in some cases, EEL-based integrated structures may be configured to account for and mitigate such problems (for example, by adjusting various components).
[0043]
[0048] In some exemplary embodiments, the polarizer used in the integrated structure implemented pursuant to this disclosure may be a splitter (rather than configured to select / pass only specific polarizations), and both polarizations may be recorded on different photodiodes. This allows for more careful monitoring of the distribution.
[0044]
[0049] In some exemplary embodiments, the light source used in the integrated structure implemented pursuant to this disclosure may have a distortion-free EEL, which may have a mixture of TE-polarized and TM-polarized elements, such as when carefully designed.
[0045]
[0050] In some exemplary embodiments, the waveguide used in the integrated structure implemented pursuant to this disclosure is g (1)It can be configured to perform an autocorrelation method such as, or used in other ways when performing it, and this can be used to prove the "quantum nature" of the distribution.
[0046]
[0051] In some exemplary embodiments, multiple integrated structures may be used. These multiple integrated structures may be parallelized, for example, using an array of VCSELs or EELs coupled to an array of waveguides / polarizers / PDs. The use of such a parallelization approach may make it possible to increase entropy generation with a very small footprint.
[0047]
[0052] The optical device according to this disclosure is configured for use in quantum random number generation, and comprises an integrated structure comprising a light source configured to emit a light beam, a photodetector configured to detect light based on a detection criterion, and a polarizer positioned between the light source and the photodetector, wherein the light source, photodetector, and polarizer are directly integrated into or embedded in the integrated structure, the polarizer is configured to process light based on a polarization criterion, the polarization criterion comprises allowing light having a particular polarization to pass through or discarding it, and the optical device is configured for use in facilitating or enabling quantum random number generation based on the detection of a light beam by the photodetector based on a detection criterion.
[0048]
[0053] In exemplary embodiments, the integrated structure comprises a silicon nitride (SiN) or silicon photonics (SiP) material.
[0054] In an exemplary embodiment, the integrated structure further comprises an optical waveguide.
[0049]
[0055] In an exemplary embodiment, the optical waveguide is configured to provide an optical path from a light source through a polarizer to a photodetector.
[0056] In exemplary embodiments, the polarizer is embedded in or integrated into the optical waveguide.
[0050]
[0057] In an exemplary embodiment, the integrated structure further comprises a coupler configured to connect a light source.
[0058] In an exemplary embodiment, the coupler is configured to adjust the direction of the light beam emitted by the light source.
[0051]
[0059] In an exemplary embodiment, the coupler includes a mirror configured to reflect a light beam emitted by a light source.
[0060] In an exemplary embodiment, the photodetector includes a photodiode.
[0052]
[0061] In exemplary embodiments, the photodiode comprises a silicon-germanium (SiGe) integrated photodiode or a hetero-integrated photodiode.
[0062] In an exemplary embodiment, the photodiode is configured to detect only one polarization.
[0053]
[0063] In exemplary embodiments, the polarizer includes a transverse electric / transverse magnetic (TE / TM) splitter.
[0064] In an exemplary embodiment, the polarizer is configured to record the polarization of both the transmitted and blocked light.
[0054]
[0065] In an exemplary embodiment, the polarizer is configured to operate within a predefined range of temperature and / or wavelength, compatible with one or more specific applications.
[0066] In an exemplary embodiment, the light source comprises a vertical-cavity surface-emitting laser (VCSEL).
[0055]
[0067] In an exemplary embodiment, the vertical-cavity surface-emitting laser (VCSEL) is positioned in an inverted configuration on the upper side of the integrated structure to radiate the light beam downward into the integrated structure.
[0068] In an exemplary embodiment, the vertical-cavity surface-emitting laser (VCSEL) is positioned on the side of the integrated structure, and the VCSEL is inverted by 90° to radiate the light beam downward into the integrated structure.
[0056]
[0069] In an exemplary embodiment, the light source comprises an edge-emitting laser (EEL).
[0070] In exemplary embodiments, edge-emitting lasers (EELs) are directly coupled using butt coupling, waveguide adapters, or lens coupling.
[0057]
[0071] In an exemplary embodiment, the edge-emitting laser (EEL) comprises a non-distorted EEL that emits light in which transverse electric (TE) polarization and transverse magnetic (TM) polarization are mixed.
[0072] As used herein, “and / or” means any one or more items in the list joined by “and / or.” For example, “x and / or y” means any element of the three-element set {(x),(y),(x,y)}. In other words, “x and / or y” means “one or both of x and y.” As another example, “x, y, and / or z” means any element of the seven-element set {(x),(y),(z),(x,y),(x,z),(y,z),(x,y,z)}. In other words, “x, y, and / or z” means “one or more of x, y, and z.” As used herein, the term “exemplary” means serving as an unrestricted example, case, or illustration. As used herein, the terms “for example” and “eg” begin a list of one or more unrestricted examples, cases, or illustrations.
[0058]
[0073] As used herein, the terms “circuit” and “circuit configuration” refer to physical electronic components (e.g., hardware) and any software and / or firmware ("code") that constitutes, is executed by, and / or is otherwise associated with the hardware. As used herein, for example, a particular processor and memory (e.g., volatile or non-volatile memory devices, general computer-readable media, etc.) may have a first “circuit” that executes one or more lines of first code, and a second “circuit” that executes one or more lines of second code. In addition, a circuit may have analog and / or digital circuit configurations. Such circuit configurations may, for example, operate with analog and / or digital signals. It should be understood that a circuit may reside in a single device or chip, a single motherboard, a single chassis, multiple enclosures in a single geographical location, multiple enclosures distributed across multiple geographical locations, and so on. Similarly, the term “module” could refer, for example, to a physical electronic component (e.g., hardware) and any software and / or firmware ("code") that may constitute the hardware, be executed by the hardware, or otherwise be associated with the hardware.
[0059]
[0074] As used herein, a circuit configuration or module is "operable" to perform a function whenever the circuit configuration or module has the necessary hardware and (if necessary) code to perform the function, regardless of whether the performance of the function is disabled or deactivated (for example, by user-configurable settings, factory trim, etc.).
[0060]
[0075] Other embodiments of the present invention provide a non-temporary computer-readable medium and / or storage medium storing machine code and / or computer programs having at least one code section executable by a machine and / or computer, and / or a non-temporary machine-readable medium and / or storage medium, thereby enabling a machine and / or computer to perform the processes described herein.
[0061]
[0076] Various embodiments of the present invention may also be incorporated into a computer program product that has all the functions to enable the implementation of the methods described herein and can perform these methods when loaded into a computer system. In this context, a computer program means any expression in any language, code, or notation of a set of instructions intended to cause a system having information processing capabilities to perform a particular function, either directly or after either or both of the following: a) conversion to another language, code, or notation, or b) reproduction in different material forms.
[0062]
[0077] While the Method and / or System is described with reference to a specific implementation, it will be understood by those skilled in the art that various modifications or substitutions can be made without departing from the scope of the Method and / or System. In addition, many modifications can be made to adapt specific circumstances or materials to the teachings of this disclosure without departing from the scope of this disclosure. Thus, the Method and / or System is not limited to the specific implementation disclosed, and is intended to include all implementations within the scope of the appended claims.
Claims
1. An optical device configured for use in quantum random number generation, Includes an integrated structure, the integrated structure is A light source configured to emit a light beam, A photodetector configured to detect light based on detection criteria, A polarizer disposed between the light source and the photodetector. Includes, The light source, the photodetector, and the polarizer are either directly integrated into the integrated structure or embedded within it. The polarizer is configured to process light based on a polarization criterion, the polarization criterion includes allowing light having a specific polarization to pass through or discarding it. The optical device is configured for use in facilitating or enabling quantum random number generation based on the detection of the light beam by the photodetector based on the detection criteria, Optical devices.
2. An optical device according to claim 1, wherein the integrated structure comprises a silicon nitride (SiN) or silicon photonics (SiP) material.
3. An optical device according to claim 1, wherein the integrated structure further includes an optical waveguide.
4. An optical device according to claim 3, wherein the optical waveguide is configured to provide an optical path from the light source through the polarizer to the photodetector.
5. An optical device according to claim 3, wherein the polarizer is embedded in or integrated into the optical waveguide.
6. An optical device according to claim 1, wherein the integrated structure further includes a coupler configured to connect the light source.
7. An optical device according to claim 6, wherein the coupler is configured to adjust the direction of the light beam emitted by the light source.
8. An optical device according to claim 7, wherein the coupler includes a mirror configured to reflect the light beam emitted by the light source.
9. An optical device according to claim 1, wherein the photodetector includes a photodiode.
10. An optical device according to claim 9, wherein the photodiode includes a silicon germanium (SiGe) integrated photodiode or a heterointegrated photodiode.
11. An optical device according to claim 9, wherein the photodiode is configured to detect only one polarization.
12. An optical device according to claim 1, wherein the polarizer includes a transverse electric / transverse magnetic (TE / TM) splitter.
13. An optical device according to claim 1, wherein the polarizer is configured to record the polarization of both the light that has passed through and the light that has been blocked.
14. An optical device according to claim 1, wherein the polarizer is configured to operate within a predefined range of temperature and / or wavelength compatible with one or more specific applications.
15. An optical device according to claim 1, wherein the light source includes a vertical cavity surface-emitting laser (VCSEL).
16. An optical device according to claim 15, wherein the vertical cavity surface-emitting laser (VCSEL) is positioned upside down on the upper side of the integrated structure to radiate the light beam downward into the integrated structure.
17. An optical device according to claim 15, wherein the vertical cavity surface-emitting laser (VCSEL) is positioned on the side of the integrated structure, and the vertical cavity surface-emitting laser (VCSEL) is inverted by 90° to radiate the light beam downward into the integrated structure.
18. An optical device according to claim 1, wherein the light source includes an edge-emitting laser (EEL).
19. An optical device according to claim 18, wherein the edge-emitting laser (EEL) is directly coupled using butt coupling, waveguide adapter, or lens coupling.
20. An optical device according to claim 18, wherein the edge-emitting laser (EEL) includes a non-distorted EEL that emits light in which transverse electric (TE) polarization and transverse magnetic (TM) polarization are mixed.