Multilayer electronic components

Abstract

To provide a miniaturized stacked electronic component having low ESL (Equivalent Series Inductance) and low ESR (Equivalent Series Resistance). [Solution] The stacked electronic component includes a body 110 including a dielectric layer 111 and internal electrodes 121, 122, and electrodes 131, 133 that penetrate the body and are arranged on the body and connected to the internal electrodes. The electrodes include first electrode layers 131a, 133a arranged on the body and mainly composed of a first conductive metal, second electrode layers 131b, 133b arranged to penetrate the body and be in contact with the electrodes and mainly composed of a second conductive metal, and third electrode layers 131c, 133c that are in contact with the second electrode layers, penetrate the body and are arranged across the first electrode layers and mainly composed of a third conductive metal. The second and third conductive metals may be different metals from each other.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] On the other hand, MLCCs are also widely used for decoupling, which removes noise from electrical signals within a set, due to their excellent high-frequency characteristics (Low ESL: Equivalent Series Inductance).

[0005] Furthermore, to resolve noise in high-speed integrated circuits (ICs), Land Side Capacitors (LSCs), a type of MLCC, can be placed adjacent to the IC. However, LSCs or LICCs are known to require low thickness, low ESL (low ESL), and low equivalent series resistance (Low ESR) characteristics.

[0006] For low ESL, it is crucial to minimize the number of magnetic flux linkages per unit current in the high-frequency range. This is addressed by various methods, such as controlling the structure to minimize the current loop or arranging internal electrodes and electrodes in a direction that cancels out the magnetic field. Similarly, for low ESR, methods such as arranging internal electrodes and electrodes in a direction that minimizes the loop current are also applied.

[0007] As mentioned above, LSCs are generally placed at the bottom of the IC substrate, and therefore require low ESL and appropriate ESR while maintaining a low thickness. In this case, LSCs are mounted either in the area where the solder balls have been removed from the bottom of the substrate or inside the substrate. Conventionally, LICC (Low Inductance Ceramic Capacitor) type capacitors were mainly used, but the need for capacitors with a square form factor is gradually increasing. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Korean Published Patent Gazette No. 10-2015-0052510 [Overview of the Initiative] [Problems that the invention aims to solve]

[0009] One of the problems that this invention aims to solve is to improve the high-frequency characteristics (Low ESL) of multilayer electronic components.

[0010] One of the problems that this invention aims to solve is achieving low equivalent series resistance (Low ESR) characteristics for multilayer electronic components.

[0011] One of the problems that this invention aims to solve is to reduce the size of multilayer electronic components.

[0012] One of the problems that this invention aims to solve is to improve the capacitance characteristics of stacked electronic components.

[0013] One of the problems that this invention aims to solve is to improve the reliability of stacked electronic components.

[0014] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0015] A stacked electronic component according to one embodiment of the present invention includes a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, and comprises a body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, and electrodes that penetrate the body in the first direction and are arranged across the first and second surfaces and are connected to the internal electrodes, wherein the electrodes comprise a first electrode layer arranged on the first and second surfaces and mainly comprising a first conductive metal, a second electrode layer that penetrates the body in the first direction and is in contact with the internal electrodes and mainly comprising a second conductive metal, and a third electrode layer that is in contact with the second electrode layer, penetrates the body in the first direction and is arranged across the first electrode layer and mainly comprising a third conductive metal, wherein the second and third conductive metals may be different metals. [Effects of the Invention]

[0016] One of the several effects of the present invention is to provide a multilayer electronic component with improved high-frequency characteristics (Low ESL).

[0017] One of the effects of the present invention is to provide a multilayer electronic component that achieves a low equivalent series resistance (Low ESR).

[0018] One of the effects of the present invention is to provide a (super) small-sized multilayer electronic component.

[0019] One of the effects of the present invention is to provide a multilayer electronic component with excellent capacitance characteristics.

[0020] One of the effects of the present invention is to provide a multilayer electronic component with improved reliability.

[0021] However, the diverse and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0022] [Figure 1] It schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention. [Figure 2] It schematically shows a plan view of FIG. 1. [Figure 3] It schematically shows a cross-sectional view taken along the line I-I' of FIG. 1. [Figure 4] (a) and (b) schematically show cross-sectional views of internal electrodes. [Figure 5] (a) to (c) schematically show plan views of multilayer electronic components according to various embodiments of the present invention.

Modes for Carrying Out the Invention

[0023] Embodiments of the present invention will be described below with reference to specific embodiments and accompanying drawings. However, embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to give a more complete explanation of the present invention to a person of the ordinary skill. Accordingly, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

[0024] Furthermore, in order to clearly illustrate the present invention in the drawings, parts unrelated to the explanation have been omitted, and the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of explanation; therefore, the present invention is not necessarily limited to what is shown. Components with the same function within the scope of the same concept are described using the same reference numerals. Moreover, throughout the specification, when a part "includes" a certain component, this does not exclude other components unless otherwise stated, but rather means that it may further include other components.

[0025] In drawings, the Z direction can be defined as the lamination direction, the first direction, or the thickness T direction; the X direction as the second direction or the length L direction; and the Y direction as the third direction or the width W direction.

[0026] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a plan view of Figure 1, Figure 3 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figures 4(a) and 4(b) schematically show cross-sectional views of the internal electrodes, and Figures 5(a) to 5(c) schematically show plan views of stacked electronic components according to various embodiments of the present invention.

[0027] Hereinafter, with reference to Figures 1 to 5(c), a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0028] A stacked electronic component 100 according to one embodiment of the present invention includes a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer 1111 in a first direction, and a body 110 including first and second surfaces 1, 2 facing each other in the first direction, third and fourth surfaces 3, 4 connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces 5, 6 connected to the first to fourth surfaces 1, 2, 3, 4 and facing each other in a third direction, and electrodes 131, 132, 133, 134 that penetrate the body 110 in the first direction and are arranged across the first and second surfaces 1, 2 and are connected to the internal electrodes 121, 122, and the electrodes 131, 132, 133, 134 are the first and The second electrode includes first electrode layers 131a, 132a, 133a, and 134a arranged on the second surfaces 1 and 2, which mainly consist of a first conductive metal; second electrode layers 131b, 132b, 133b, and 134b arranged so as to penetrate the main body 110 in the first direction and contact the internal electrodes 121 and 122, which mainly consist of a second conductive metal; and third electrode layers 131c, 132c, 133c, and 134c arranged across the first electrode layers 131a, 132a, 133a, and 134a, which mainly consist of a third conductive metal, and the second and third conductive metals may be different metals from each other.

[0029] In the following, one embodiment of the present invention will be described in more detail. For the sake of convenience, structures not shown in the drawings may be described with corresponding reference numerals. However, an ordinary engineer should be able to understand them appropriately by referring to the corresponding reference numerals.

[0030] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0031] More specifically, the main body 110 may include a capacitance forming section that includes a first internal electrode 121 and a second internal electrode 122, which are disposed inside the main body 110 and are alternately arranged facing each other with a dielectric layer 111 in between, to form a capacitance.

[0032] There are no particular limitations on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but may have a substantially hexahedron shape.

[0033] The main body 110 may have a first and second surface 1, 2 that are opposite to each other in the first direction, a third and fourth surface 3, 4 that are opposite to each other in the second direction, and a fifth and sixth surface 5, 6 that are opposite to each other in the third direction.

[0034] The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0035] The raw materials for forming the dielectric layer 111 are not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3) materials can be used, such as barium titanate materials, lead-composite perovskite materials, or strontium titanate materials. Barium titanate materials can include BaTiO3 ceramic particles, and examples of ceramic particles include BaTiO3, BaTiO3 in which Ca (calcium), Zr (zirconium), etc. are partially dissolved (BaTiO3). 1-x Ca x )TiO3(0 <x<1)、Ba(Ti 1-y Cay )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc. may be mentioned.

[0036] Also, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) as raw materials for forming the dielectric layer 111 according to the purpose of the present invention.

[0037] On the other hand, in order to distinguish from the dielectric layers included in the cover parts 112 and 113 described later, the dielectric layer 111 included in the capacitance forming part can be defined as the first dielectric layer, and the dielectric layers included in the cover parts 112 and 113 can be defined as the second dielectric layer. The first dielectric layer and the second dielectric layer may be the same or different, and are not particularly limited.

[0038] And since the first and second dielectric layers can be formed using a dielectric material such as barium titanate (BaTiO3), they can include a dielectric microstructure after firing. The dielectric microstructure includes a plurality of dielectric crystallites, grain boundaries disposed between the adjacent dielectric crystallites, and n-fold points disposed at points where three or more of the grain boundaries meet, and can include a plurality of dielectric crystallites, grain boundaries, and n-fold points respectively.

[0039] The dimension of the dielectric layer 111 in the first direction does not need to be particularly limited.

[0040] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the dimension of the dielectric layer 111 in the first direction may be 3.0 μm or less, 2.0 μm or less, 1.0 μm or less, 0.8 μm or less, 0.6 μm or less, 0.5 μm or less, or 0.4 μm or less.

[0041] In this case, the dimension of the dielectric layer 111 in the first direction may be a concept that includes the dimension of at least one of the plurality of dielectric layers 111 in the first direction, or it may be a concept that includes the dimension of each of the dielectric layers 111 in the first direction.

[0042] Here, the dimension of the dielectric layer 111 in the first direction can mean the dimension of the dielectric layer 111 in the first direction that is positioned between the first and second internal electrodes 121 and 122.

[0043] On the other hand, the dimension of the dielectric layer 111 in the first direction can mean the dimension, distance, size, or length of the dielectric layer 111 in the first direction, or it can mean the thickness of the dielectric layer 111.

[0044] In this case, the dimension of the dielectric layer 111 in the first direction may be a concept that includes the dimension of at least one of the plurality of dielectric layers 111 in the first direction, or it may be a concept that includes the dimension of each of the dielectric layers 111 in the first direction.

[0045] Furthermore, the dimension of the dielectric layer 111 in the first direction can mean the average dimension of one dielectric layer in the first direction, or the average dimension of each of multiple dielectric layers 111 in the first direction, or the average dimension of multiple dielectric layers 111 in the first direction.

[0046] The average dimension of the dielectric layer 111 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension of a single dielectric layer in the first direction can mean the average value calculated by measuring the dimension in the first direction at five equally spaced points in the third direction of the single dielectric layer in the scanned image. These five equally spaced points can be specified in the capacitance formation section. Furthermore, by extending this measurement of average values ​​to three dielectric layers, the average dimension of multiple dielectric layers in the first direction can be further generalized.

[0047] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0048] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first and second internal electrodes 121 and 122 may be arranged alternately facing each other with a dielectric layer 111 constituting the main body 110 in between. The first and second internal electrodes 121 and 122 can be electrically isolated from each other by the dielectric layer 111 arranged between them in a first direction. Furthermore, the internal electrodes 121 and 122 may be separated from the third to sixth surfaces 3, 4, 5, and 6.

[0049] In this case, the internal electrodes 121 and 122 may be connected to electrodes 131, 132, 133, and 134 that penetrate the main body 110 in the first direction, as described later, or they may be separated by insulating parts 151 and 152 in between.

[0050] Specifically, the first internal electrode 121 can be connected to the first and third electrodes 131 and 133, and separated from the second and fourth electrodes 132 and 134. More specifically, the first internal electrode 121 may be arranged to be in contact with and connected to the second electrode layers 131b and 133b of the first and third electrodes, or it may be arranged to be separated from the second electrode layers 132b and 134b of the second and fourth electrodes with the first insulating portion 151 in between.

[0051] The first insulating portion 151 may correspond to an area where the first internal electrode pattern is not arranged when forming the first internal electrode pattern that will become the first internal electrode 121, or it may be formed by filling it with a substance contained in the dielectric layer 111, or it may correspond to at least a part of the dielectric layer 111. The first insulating portion 151 can electrically insulate the first internal electrode 121 from the second and fourth electrodes 132 and 134.

[0052] The second internal electrode 122 is connected to the second and fourth electrodes 132 and 134, and can be separated from the first and third electrodes 131 and 133. More specifically, the second internal electrode 122 may be arranged in contact with and connected to the second electrode layers 132b and 134b of the second and fourth electrodes, or it may be arranged separately from the second electrode layers 131b and 133b of the first and third electrodes with the second insulating portion 152 in between.

[0053] The second insulating portion 151 may correspond to an area where the second internal electrode pattern is not arranged when forming the second internal electrode pattern that will become the second internal electrode 122, or it may be formed by filling it with a substance contained in the dielectric layer 111, or it may correspond to at least a part of the dielectric layer 111. The second insulating portion 151 provides electrical insulation between the second internal electrode 122 and the first and third electrodes 131 and 133.

[0054] The diameters of the first and second insulating parts 151 and 152 can correspond to D1, and D1 is not particularly limited as long as it is large enough to form through holes 141, 142, 143, and 144 inside and fill the second electrode layers 131b, 132b, 133b, 134b and the third electrode layers 131c, 132c, 133c, and 134c. In this case, the first and second insulating parts 151 and 152 can correspond to substantially circular strips, and the diameter D1 of the first and second insulating parts 151 and 152 can mean the average of any two diameter sizes that share the center of the first and second insulating parts 151 and 152 (which can mean the same point as the center of the two circular lines that make up the circular strip). Here, the diameter D1 of the first and second insulating parts 151 and 152 can mean the respective diameter D1 of the first and second insulating parts 151 and 152.

[0055] The main body 110 may be formed by alternately laminating a first ceramic green sheet printed with a first internal electrode pattern and a second ceramic green sheet printed with a second internal electrode pattern, and then firing them. Here, the first and second internal electrode patterns can be formed by applying an internal electrode paste, and after firing, they can become the first and second internal electrodes 121 and 122, respectively. As a method for applying the conductive paste for internal electrodes, a screen printing method or a gravure printing method can be used, but the present invention is not limited thereto.

[0056] The material forming the internal electrodes 121 and 122 is not particularly limited and may mainly consist of a conductive metal with excellent electrical conductivity. The conductive metal that is the main component of the internal electrodes 121 and 122 can be called the fifth conductive metal in order to distinguish it from the first to fourth conductive metals described later.

[0057] In this invention, "main component" can mean a component that accounts for a relatively large weight ratio or atomic number ratio compared to other components, and can mean a component that accounts for more than 50 wt% of the total weight of the constituent substances, a component that accounts for more than 50 at% of the atomic number, or a component that accounts for more than 50 mol% of the mole number.

[0058] The fifth conductive metal, for example, the internal electrodes 121 and 122, can include nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and one or more of these, preferably containing nickel (Ni) as the main component.

[0059] On the other hand, the dimensions of the internal electrodes 121 and 122 in the first direction do not need to be particularly limited.

[0060] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component, the dimensions of the internal electrodes 121 and 122 in the first direction may be 2.0 μm or less, 1.0 μm or less, 0.8 μm or less, 0.6 μm or less, 0.5 μm or less, or 0.4 μm or less.

[0061] In this case, the dimensions of the internal electrodes 121 and 122 in the first direction may be a concept that includes the dimensions of at least one of the multiple internal electrodes 121 and 122 in the first direction, or it may be a concept that includes the dimensions of each of the internal electrodes 121 and 122 in the first direction.

[0062] Here, the dimension of the internal electrodes 122, 122 in the first direction can mean the dimension, size, or length of the internal electrodes 121, 122 in the first direction, or it can mean the thickness of the internal electrodes 121, 122.

[0063] In this case, the dimensions of the internal electrodes 121 and 122 in the first direction may be a concept that includes the dimensions of at least one of the multiple internal electrodes 121 and 122 in the first direction, or it may be a concept that includes the dimensions of each of the internal electrodes 121 and 122 in the first direction.

[0064] In this case, the dimensions of the internal electrodes 121 and 122 in the first direction can represent the average dimensions of one internal electrode 121 or 122 in the first direction, or the average dimensions of each of multiple internal electrodes 121 or 122 in the first direction, or the average dimensions of multiple internal electrodes 121 or 122 in the first direction.

[0065] The average dimensions of the internal electrodes 121 and 122 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension of a single internal electrode in the first direction can be calculated as the average value obtained by measuring the dimension in the first direction at five equally spaced points in the third direction of the single internal electrode in the scanned image. These five equally spaced points can be specified in the capacitance forming section. Furthermore, by extending this average value measurement to three internal electrodes and measuring the average values, the average dimensions of multiple internal electrodes in the first direction can be further generalized.

[0066] On the other hand, the main body 110 may include cover portions 112 and 113 arranged on both end surfaces (end-surfaces) of the volume-forming portion in the first direction.

[0067] Specifically, it may include a first cover portion 112 positioned on one side of the volume-forming portion in the first direction and a second cover portion 113 positioned on the other side of the volume-forming portion in the first direction. More specifically, for example, it may include an upper cover portion 112 positioned on the upper part of the volume-forming portion in the first direction and a lower cover portion 113 positioned on the lower part of the volume-forming portion in the first direction.

[0068] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in a first direction on the upper and lower surfaces of the capacitance forming portion, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0069] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion. That is, the first cover portion 112 and the second cover portion 113 may contain a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0070] On the other hand, the dimensions of the cover portions 112 and 113 in the first direction do not need to be particularly limited, and in the following description of the dimensions of the cover portions 112 and 113 in the first direction, it may mean the dimensions of the first cover portion 112 and the second cover portion 113, respectively.

[0071] However, in order to more easily achieve miniaturization and high capacitance of stacked electronic components, the dimensions of the cover portions 112 and 113 in the first direction may be 100 μm or less, 50 μm or less, 30 μm or less, or 20 μm or less.

[0072] Here, the dimensions of the cover portions 112 and 113 in the first direction can mean the dimensions, distance, size, or length of the cover portions 112 and 113 in the first direction, or it can mean the thickness of the cover portions 112 and 113.

[0073] Furthermore, the dimensions of the cover portions 112 and 113 in the first direction can represent the average dimensions of the first and second cover portions 112 and 113 in the first direction, or the average dimensions of the first and second cover portions 112 and 113 in the first direction.

[0074] The average dimensions of the cover portions 112 and 113 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimensions in the first direction at five equally spaced points in the third direction in an image scanned from one cover portion.

[0075] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has four electrodes 131, 132, 133, and 134. However, the number and shape of the electrodes 131, 132, 133, and 134 can be changed depending on the form of the internal electrodes 121 and 122 or other purposes.

[0076] Electrodes 131, 132, 133, and 134 are positioned on the main body 110 and can be connected to internal electrodes 121 and 122.

[0077] On the other hand, the electrodes 131, 132, 133, and 134 arranged on the main body 110 may include at least a portion of a rectangular region and at least a portion of a circular region, but are not particularly limited thereto. They may include at least a portion of a semicircular region and at least a portion of a circular region, or at least a portion of a triangular region and at least a portion of a circular region, and their shape is not particularly limited.

[0078] Electrodes 131, 132, 133, and 134 may contain any material that has electrical conductivity, such as metals, and the specific material may be determined by considering electrical properties, structural stability, etc. Furthermore, they may have a multilayer structure.

[0079] More specifically, electrodes 131, 132, 133, and 134 can be arranged through the body 110 and across the first and second surfaces 1 and 2. In other words, electrodes 131, 132, 133, and 134 may be arranged on the first surface 1, through the interior of the body 110 in a first direction and arranged inside the body 110, and on the second surface 2, or they may be arranged continuously across the first surface 1, the interior of the body 110, and the second surface 2.

[0080] Specifically, electrodes 131, 132, 133, and 134 are arranged on the first and second surfaces 1 and 2, and may include first electrode layers 131a, 132a, 133a, and 134a mainly composed of a first conductive metal, which penetrate the main body 110 in a first direction and are in contact with the internal electrodes 121 and 122, which penetrate the main body 110 in a first direction and are in contact with the second electrode layers 131b, 132b, 133b, and 134b mainly composed of a second conductive metal, which penetrate the main body 110 in a first direction and are arranged across the first electrode layers 131a, 132a, 133a, and 134a, which contain a third conductive metal as the main component. Furthermore, electrodes 131, 132, 133, and 134 may include, but are not limited to, fourth electrode layers 131d, 132d, 133d, and 134d arranged on third electrode layers 131c, 132c, 133c, and 134c.

[0081] Here, it is preferable that the first to fourth electrode layers correspond to layers that are distinct from each other. However, it is not limited to this, and they may be separated according to the order of the manufacturing process, and at least some of the first to fourth electrode layers may be observed as a single layer without being distinguished from each other.

[0082] In this invention, "distinguished" can mean, but is not limited to, two layers being distinguishable by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, a state in which they are distinguishable by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM).

[0083] As mentioned above, although not all details are shown in the drawings, for the sake of explanation, the first to fourth electrodes 131, 132, 133, and 134 may include the first electrode layers 131a, 132a, 133a, and 134a, the second electrode layers 131b, 132b, 133b, and 134b, and the third electrode layers 131c, 132c, 133c, and 134c, and may also include the fourth electrode layers 131d, 132d, 133d, and 134d.

[0084] The first electrode layers 131a, 132a, 133a, and 134a can be arranged on the first and second surfaces 1 and 2, and more preferably, only on the first and second surfaces 1 and 2. Here, being arranged on the first and second surfaces 1 and 2 can mean being arranged on a part or at least a part of the first and second surfaces 1 and 2. Also, being arranged only on the first and second surfaces 1 and 2 can mean not being arranged on the third to sixth surfaces 3, 4, 5, and 6, or being arranged inside the body 110, or not being arranged inside by penetrating the body 110.

[0085] By arranging the first electrode layers 131a, 132a, 133a, and 134a only on the first and second surfaces 1 and 2, the third electrode layers 131c, 132c, 133c, and 134c can be arranged more uniformly and easily, making it easier to fabricate the shape of the external electrode that the present invention aims to create. Furthermore, by not arranging the first electrode layers 131a, 132a, 133a, and 134a on the third to sixth surfaces 3, 4, 5, and 6, the size of the external electrode can be reduced, thereby reducing the size of the multilayer electronic component, which may be advantageous for mounting on or inside a substrate, and can further improve dielectric capacitance.

[0086] In this case, the average dimension of the first electrode layers 131a, 132a, 133a, and 134a in the first direction may be 1 μm or more and 10 μm or less, or it may be a uniform thickness with an error of ±10% or less based on the average dimension in the first direction.

[0087] In this case, by ensuring that the average dimension of the first electrode layers 131a, 132a, 133a, and 134a in the first direction is between 1 μm and 10 μm, excellent dielectric capacitance can be achieved.

[0088] If the average dimension of the first electrode layers 131a, 132a, 133a, and 134a in the first direction is less than 1 μm, it may become difficult to control the shape of electrodes 131, 132, 133, and 134, including the third electrode layers 131c, 132c, 133c, and 134c. If the average dimension of the first electrode layers 131a, 132a, 133a, and 134a in the first direction exceeds 10 μm, the dielectric capacitance characteristics may be reduced compared to multilayer electronic components of the same size.

[0089] Here, the dimensions in the first direction or the average dimensions in the first direction of the first electrode layers 131a, 132a, 133a, and 134a can mean the dimensions in the first direction or the average dimensions in the first direction of the first electrode layers 131a, 132a, 133a, and 134a of the first to fourth electrodes 131, 132, 133, and 134, respectively.

[0090] The method for measuring the dimensions of the first electrode layers 131a, 132a, 133a, and 134a in the first direction or the average dimensions in the first direction is not limited to the above, but can be measured by scanning an image of the cross-sections in the first and third directions with a scanning electron microscope (SEM). More specifically, the average dimensions of a single first electrode layer in the first direction can mean the average value calculated by measuring the dimensions in the first direction at three equally spaced points in the third direction in the scanned image, and the dimensions in the first direction measured at the three points can correspond to an error of within ±10% of the average dimensions in the first direction.

[0091] The first electrode layers 131a, 132a, 133a, and 134a may be formed by printing a paste for the first electrode layer containing a first conductive metal onto the main body 110; the second electrode layers 131b, 132b, 133b, and 134b may be formed by forming a plating containing a second conductive metal; and the third electrode layers 131c, 132c, 133c, and 134c may be formed by forming a plating containing a third conductive metal. Furthermore, the fourth electrode layers 131d, 132d, 133d, and 134d may be formed by forming a plating containing a fourth conductive metal.

[0092] The first conductive metal contained in the first electrode layers 131a, 132a, 133a, and 134a can be a material with excellent electrical conductivity, and may include at least one of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. Preferably, it may contain nickel (Ni), and more preferably, it may contain nickel (Ni) as the main component.

[0093] The second electrode layers 131b, 132b, 133b, and 134b can play a role in improving connectivity and bonding strength with the internal electrodes 121 and 122.

[0094] The second conductive metal contained in the second electrode layers 131b, 132b, 133b, and 134b can be a material with excellent electrical conductivity, such as at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. Preferably, it may contain nickel (Ni), and more preferably, it may contain nickel (Ni) as the main component.

[0095] The second electrode layers 131b, 132b, 133b, and 134b may be formed by creating through holes 141, 142, 143, and 144 that penetrate the interior of the main body 110 on which the first electrode layers 131a, 132a, 133a, and 134a are formed, and then filling them with a second conductive metal by plating. As a result, the second electrode layers 131b, 132b, 133b, and 134b may include regions that are in contact with the internal electrodes 121 and 122, and regions that are separated from the internal electrodes 121 and 122 by insulating parts 151 and 152 in between, i.e., regions that are in contact with insulating parts 151 and 152, without being in contact with the internal electrodes 121 and 122. In the regions where the second electrode layers 131b, 132b, 133b, and 134b are in contact with the insulating portions 151 and 152, the bonding strength may not be excellent. However, if the second conductive metal is the same as the fifth conductive metal, which is the main component of the internal electrodes 121 and 122, the bonding strength may be excellent in the regions in contact with the internal electrodes 121 and 122. Furthermore, even if the third conductive metal contained in the third electrode layers 131c, 132c, 133c, and 134c (described later) is different from the second conductive metal, excellent bonding strength can be achieved, and by using a metal with excellent electrical properties as the third conductive metal, the electrical properties can be improved.

[0096] In other words, the second conductive metal is preferably the same as the fifth conductive metal, which is the main component contained in the internal electrodes 121 and 122, and is preferably different from the third conductive metal, which is the main component contained in the third electrode layers 131c, 132c, 133c, and 134c.

[0097] The third electrode layers 131c, 132c, 133c, and 134c can play a role in improving mounting characteristics, or in improving electrical connectivity or electrical characteristics.

[0098] The third conductive metal contained in the third electrode layers 131c, 132c, 133c, and 134c can be a material with excellent electrical conductivity, such as nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, and at least one of these may be included. Preferably, copper (Cu) may be included, and more preferably, copper (Cu) may be included as the main component. However, as described above, the properties of the stacked electronic component 100 can be improved by using a metal different from the second conductive metal, for example, a metal with excellent electrical properties, an economical metal, or a metal with excellent mechanical strength.

[0099] The third electrode layers 131c, 132c, 133c, and 134c may be formed by filling the through holes 141, 142, 143, and 144 with a third conductive metal by plating after the second electrode layers 131b, 132b, 133b, and 134b, which are filled into the through holes 141, 142, 143, and 144, are penetrated by a third conductive metal by a plating method. This allows the third electrode layers 131c, 132c, 133c, and 134c to be positioned inside the second electrode layers 131b, 132b, 133b, and 134b, and to extend from there to cover the first electrode layers 131a, 132a, 133a, and 134a, which are positioned on the first and second surfaces 1 and 2. In other words, the third electrode layers 131c, 132c, 133c, and 134c can be arranged in contact with and inside the second electrode layers 131b, 132b, 133b, and 134b, and can extend from there and be arranged over the first electrode layers 131a, 132a, 133a, and 134a.

[0100] The fourth electrode layers 131d, 132d, 133d, and 134d can play a role in improving the mounting characteristics.

[0101] The fourth conductive metal contained in the fourth electrode layers 131d, 132d, 133d, and 134d can be a material with excellent electrical conductivity, such as at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. Preferably, at least one of nickel (Ni), tin (Sn), copper (Cu), and alloys thereof may be included, and more preferably, at least one of nickel (Ni), tin (Sn), copper (Cu), and alloys thereof may be included as the main component. However, it is not limited thereto, and the fourth electrode layers 131c, 132c, 133c, and 134c may include multiple layers containing the fourth conductive metal.

[0102] The fourth electrode layers 131d, 132d, 133d, and 134d can be arranged to cover the third electrode layers 131c, 132c, 133c, and 134c, in other words, the fourth electrode layers 131d, 132d, 133d, and 134d can be arranged on top of the third electrode layers 131c, 132c, 133c, and 134c.

[0103] On the other hand, the first and third electrodes 131 and 133 can be arranged diagonally opposite each other, and the second and fourth electrodes 132 and 134 can be arranged diagonally opposite each other at a position where they intersect with the first and third electrodes 131 and 133.

[0104] In this case, if L1 is the distance between two third electrode layers 131c, 132c, 133c, and 134c of the first to fourth electrodes that are adjacent in the second direction, and L2 is the distance between two third electrode layers 131c, 132c, 133c, and 134c of the first to fourth electrodes that are adjacent in the third direction, then 0.9 ≤ L2 / L1 ≤ 1.1 can be satisfied. More specifically, for example, if L1 is the distance between the third electrode layer 133c of the third electrode and the third electrode layer 134c of the fourth electrode in the second direction, and L2 is the distance between the third electrode layer 132c of the second electrode and the third electrode layer 133c of the third electrode in the third direction, then 0.9 ≤ L2 / L1 ≤ 1.1 can be satisfied.

[0105] One embodiment of the present invention satisfies 0.9 ≤ L2 / L1 ≤ 1.1, thereby minimizing the number of magnetic flux linkages per unit current in the high-frequency region, or minimizing the current loop, thereby satisfying high-frequency characteristics (Low ESL).

[0106] L1 and L2 can be measured by observing or measuring the cross-sections in the second and third directions. Alternatively, they can be measured by the following methods, but are not limited thereto. The third electrode layers 131c, 132c, 133c, and 134c can also be placed on the first and second surfaces 1 and 2 of the main body, but at least a portion of the third electrode layers 131c, 132c, 133c, and 134c that overlap with the insulating portions 151, 152 or the through holes 141, 142, 143, and 144 in the first direction may have lower dimensions, size, or height in the first direction compared to the areas that do not overlap with the insulating portions 151, 152 or the through holes 141, 142, 143, and 144 in the first direction, which may result in a step. In other words, the first to fourth electrodes 131, 132, 133, and 134 can be arranged on the first and second surfaces 1 and 2 so as to correspond to the first and second insulating portions 151 and 152, and the step difference between the first to fourth electrodes 131, 132, 133, and 134 may be lower in the regions corresponding to the first and second insulating portions 151 and 152. As a result, the regions with lower step differences among the first to fourth electrodes 131, 132, 133, and 134 can be considered as regions where the third electrode layers 131c, 132c, 133c, and 134c are arranged, and L1 and L2 can be obtained by measuring the distance in the second direction and the distance in the third direction between the centers of the regions with lower step differences.

[0107] Furthermore, the diameters of the first to fourth electrodes 131, 132, 133, and 134, which are arranged on the first and second surfaces 1 and 2 in accordance with the shapes of the first and second insulating portions 151 and 152, can correspond to D2. D2 is not particularly limited, as it only needs to be an area that can cover the second electrode layers 131b, 132b, 133b, and 134b, or an area that can cover the third electrode layers 131c, 132c, 133c, and 134c.

[0108] On the other hand, the diameter D1 of the first and second insulating portions 151 and 152 may be 1 μm or more larger than the diameter D2 of the first to fourth electrodes 131, 132, 133, and 134 arranged on the first and second surfaces 1 and 2 to correspond to the shapes of the first and second insulating portions 151 and 152, preferably 3 μm or more, and more preferably 5 μm or more larger. In other words, the condition 1 μm ≤ D1 - D2 can be satisfied.

[0109] By ensuring that D1 and D2 satisfy 1 μm ≤ D1 - D2, short circuits can be prevented, resulting in superior electrical characteristics.

[0110] If D1-D2 < 1 μm, a short circuit occurs more easily, which can lead to failure of the multilayer electronic component 100.

[0111] On the other hand, the size of the multilayer electronic component 100 is not particularly limited. The dimension of the multilayer electronic component 100 in the first direction (e.g., thickness) can be denoted as T, the dimension in the second direction (e.g., length) as L, and the dimension in the third direction (e.g., width) as W. Here, the dimension in the first direction can mean the average dimension of the multilayer electronic component in the first direction, the dimension in the second direction can mean the average dimension of the multilayer electronic component in the second direction, and the dimension in the third direction can mean the average dimension of the multilayer electronic component in the third direction, but it is not particularly limited to these, and can mean any generally accepted numerical value.

[0112] In this case, the average dimension (T) of the stacked electronic component 100 in the first direction satisfies 30 μm ≤ T ≤ 3 / 4 × W, the average dimension (W) in the third direction satisfies W ≤ 750 μm, and the average dimension (W) in the third direction and the average dimension (L) in the second direction can satisfy 1.75 ≤ W / L ≤ 2.25.

[0113] By satisfying the above conditions, the average dimensions T in the first direction, L in the second direction, and W in the third direction of the stacked electronic component 100 can reduce noise in high-speed integrated circuits (ICs) and can be applied to LSCs (Land Side Capacitors).

[0114] The present invention will be described in more detail below through test examples, but this is intended to aid in a concrete understanding of the present invention, and the scope of the present invention is not limited by the preferred test examples.

[0115] (Example test) Test Examples 1 to 6 involve fabricating sample chips that include a main body containing a dielectric layer and internal electrodes, and electrodes that penetrate the main body in a first direction and are arranged across the first and second surfaces of the main body, and are connected to the internal electrodes. In this case, the electrodes include a first electrode layer arranged on the first and second surfaces of the main body, a second electrode layer arranged to penetrate the main body in a first direction and be in contact with the internal electrodes, and a third electrode layer that is in contact with the second electrode layer, penetrates the main body in a first direction and is arranged across the first electrode layer. In this case, the second electrode layer and the third electrode layer were fabricated so that their main component metals were different. In this case, the sample chip was fabricated so that it had a region where one internal electrode and one electrode were connected, while also including a region where other internal electrodes and other electrodes were separated by an insulating portion in between without being connected.

[0116] Table 1 below shows the short-circuit rate (%) for each of the six test examples, where the difference in diameter D1 of the insulating part and the shape of the insulating part was varied, and the difference in diameter D2 of the electrodes arranged on the first and second surfaces in the first direction of the main body (D1-D2 (μm)) was changed accordingly.

[0117] The short-circuit rate (%) is calculated by preparing 100 sample chips for each test example, measuring the insulation resistance (IR) when a voltage of 1Vr is applied using an insulation resistance meter (KEYSIGHT 4339B), and then evaluating any sample chips that fall outside the impedance measurement range ("OVLD") as having experienced a short circuit. The ratio of the number of short-circuited chips to the total number of sample chips is then expressed as a percentage.

[0118] [Table 1]

[0119] As can be seen in Test Examples 1 and 2, when the D1-D2 (μm) values ​​were -1 μm or 0 μm, i.e., less than 1 μm (D1-D2 < 1 μm), a short circuit occurred in all sample chips. On the other hand, as can be seen in Test Examples 3 to 6, when the D1-D2 (μm) values ​​were 1 μm, 3 μm, 5 μm, or 20 μm, i.e., 1 μm or greater (1 μm ≤ D1-D2), a short circuit did not occur in at least some sample chips, and it can be confirmed that the electrical characteristics were good.

[0120] As described above, embodiments of the present invention have been explained in detail, but the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0121] Furthermore, the expression "one embodiment" as used herein does not mean that each embodiment is the same as another, but is provided to highlight and describe the unique and distinct features of each embodiment. However, the above-presented embodiments do not preclude their realization in combination with the features of other embodiments. For example, even if a matter described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment unless there is a description in the other embodiment that contradicts or inconsists with that matter.

[0122] The terms used herein are used solely to describe one embodiment and are not intended to limit the invention. Where otherwise clearly the context indicates otherwise, singular expressions include plural expressions. [Explanation of Symbols]

[0123] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 112, 113: Cover section 121, 122: Internal electrode 131, 132, 133, 134: Electrode 141, 142, 143, 144: Through holes 151, 152: Insulation part

Claims

1. A body comprising a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, the body comprising first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, The body includes an electrode that penetrates the body in a first direction and is arranged across the first and second surfaces, and is connected to the internal electrode, The electrode includes a first electrode layer disposed on the first and second surfaces and mainly comprising a first conductive metal, a second electrode layer disposed so as to penetrate the body in the first direction and be in contact with the internal electrode and mainly comprising a second conductive metal, and a third electrode layer in contact with the second electrode layer, disposed across the first electrode layer and penetrating the body in the first direction and mainly comprising a third conductive metal. A multilayer electronic component in which the second and third conductive metals are different metals from each other.

2. The internal electrode mainly contains a fifth conductive metal, The stacked electronic component according to claim 1, wherein the second and fifth conductive metals are the same metal.

3. The internal electrodes include first and second internal electrodes. The electrode includes the first to fourth electrodes, The first internal electrode is connected to the first and third electrodes and separated from the second and fourth electrodes, and the second internal electrode is connected to the second and fourth electrodes and separated from the first and third electrodes. The first and third electrodes are arranged diagonally opposite to each other, and the second and fourth electrodes are arranged diagonally opposite to each other at positions where they intersect with the first and third electrodes. The stacked electronic component according to claim 1, wherein when L1 is the distance between two third electrode layers of the first to fourth electrodes that are arranged adjacently in the second direction, and L2 is the distance between two electrodes of the first to fourth electrodes that are arranged adjacently in the third direction, the following condition is met: 0.9 ≤ L2 / L1 ≤ 1.

1.

4. The internal electrodes include first and second internal electrodes. The electrode includes the first to fourth electrodes, The first internal electrode is connected to the first and third electrodes and separated from the second and fourth electrodes, and the second internal electrode is connected to the second and fourth electrodes and separated from the first and third electrodes. When the region where the first internal electrode is separated from the second and fourth electrodes is defined as the first insulating portion, and the region where the second internal electrode is separated from the first and third electrodes is defined as the second insulating portion, The first to fourth electrodes are arranged on the first and second surfaces so as to correspond to the first and second insulating portions. The stacked electronic component according to claim 1, wherein when D1 is the diameter of the first and second insulating portions, and D2 is the diameter of the first to fourth electrodes arranged on the first and second surfaces corresponding to the shapes of the first and second insulating portions, 1 μm ≤ D1 - D2.

5. The stacked electronic component according to claim 1, wherein the average dimension of the first electrode layer in the first direction is 1 μm or more and 10 μm or less.

6. The laminated electronic component according to claim 1, wherein the electrode is disposed on the third electrode layer and further comprises a fourth electrode layer mainly composed of a fourth conductive metal.

7. When the average dimension of the stacked electronic component in the first direction is T and the average dimension in the third direction is W, A multilayer electronic component according to claim 1, satisfying 30 μm ≤ T ≤ 3 / 4 × W.

8. When the average dimension of the stacked electronic component in the second direction is L, The stacked electronic component according to claim 7, wherein W and L satisfy 0.85 ≤ W / L ≤ 1.15.

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