Method for manufacturing electronic components, electronic components, and thin-film resistors

Abstract

This invention discloses a method for manufacturing electronic components, electronic components, and thin-film resistors. [Solution] The method for manufacturing the electronic component 200 includes forming a through hole 11 penetrating a ceramic substrate 1, forming a resistive film 2 on one side of the ceramic substrate 1, forming metal layers 3 on both sides of the ceramic substrate 1, with the metal layers 3 covering a portion of the resistive film 2 and a portion of the metal layers 3 located within the through hole 11, forming a conductive structure 4 on one side of the metal layer 3, with a portion of the conductive structure 4 constituting a first electrode 41, a second electrode 42, and a wiring structure 43 on one side of the ceramic substrate 1, forming a third electrode 44 on the other side of the ceramic substrate 1, with the third electrode 44 being electrically connected to the first electrode 41, the second electrode 42, or the wiring structure 43, forming an insulating protective layer 5 on one side of the resistive film 2 so as to cover the portion of the resistive film 2 not covered by the metal layers 3, and forming a welding auxiliary structure 6 on one side of the second electrode 42.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an electronic component, an electronic component, and a thin film resistor, and particularly to a method for manufacturing an electronic component having a resistance film and an electronic component having a resistance film.

Background Art

[0002] In the prior art, in an electronic component including a thin film resistor, since the thin film resistor is mostly directly exposed, there is a problem that it is likely to fail due to various environmental factors.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The present invention discloses a method for manufacturing an electronic component, an electronic component, and a thin film resistor. It is mainly used to improve the problem that the thin film resistor included in the electronic component having a thin film resistor in the prior art is likely to fail due to various environmental factors.

Means for Solving the Problems

[0004] A method for manufacturing an electronic component disclosed in one embodiment of the present invention includes: a through-hole forming step of forming at least one through-hole in a ceramic substrate so that the through-hole penetrates the ceramic substrate; a resistive film forming step of forming a resistive film on one side of the ceramic substrate; a metal layer forming step of forming metal layers on both sides of the ceramic substrate so that a portion of the metal layer covers a portion of the resistive film and a portion of the metal layer is formed on the inner wall of the through-hole; a conductive structure forming step of forming a conductive structure on one side of the metal layer so that a portion of the conductive structure constitutes a first electrode, a second electrode and at least one wiring structure on one side of the ceramic substrate, and a portion of the conductive structure forms a third electrode on the other side of the ceramic substrate, and the third electrode is electrically connected to the first electrode, the second electrode or the wiring structure via a conductive material provided in the through-hole; an insulating protective layer forming step of forming an insulating protective layer on one side of the resistive film so as to cover the portion of the resistive film not covered by the metal layer; and a welding auxiliary structure forming step of forming a welding auxiliary structure used for mounting a chip on one side of the second electrode.

[0005] One embodiment of the present invention discloses an electronic component comprising a ceramic substrate, a resistive film, a metal layer, a conductive material, a first electrode, a second electrode, a wiring structure, a third electrode, an insulating protective layer, and a welding auxiliary structure. The ceramic substrate has a plurality of through holes, each through hole penetrating the ceramic substrate. The resistive film is formed on one side of the ceramic substrate. The metal layer is formed on both sides of the ceramic substrate, with some of the metal layer covering some of the resistive film and some of the metal layer forming on the inner walls of the through holes. The conductive material is filled into each through hole. The first electrode is formed on one side of some of the metal layers. The second electrode is formed on one side of some of the metal layers. The wiring structure is formed on one side of some of the metal layers. The third electrode is formed on the other side of some of the metal layers and is electrically connected to the first electrode, the second electrode, or the wiring structure via the conductive material. The insulating protective layer is formed on one side of the resistive film and covers the portion of the resistive film not covered by the metal layer. The welding auxiliary structure is formed on one side of the second electrode and is used for mounting the chip.

[0006] One embodiment of the present invention discloses an electronic component comprising a first ceramic substrate, a second ceramic substrate, a connecting structure, a resistive film, a conductive structure, an insulating protective layer, and a welding auxiliary structure. The first ceramic substrate has a plurality of first through holes, each of which penetrates the first ceramic substrate. The second ceramic substrate has a plurality of second through holes, each of which penetrates the second ceramic substrate. A third electrode is formed on one side of the second ceramic substrate. The first ceramic substrate is connected to the second ceramic substrate via the connecting structure. The connecting structure, the conductive material in the first through holes, and the conductive material in the second through holes are electrically connected to each other. A resistive film is formed on one side of the first ceramic substrate. A conductive structure is formed on one side of the first ceramic substrate, with some conductive structures constituting a first electrode, some conductive structures constituting a second electrode, and some conductive structures constituting at least one wiring structure. Some conductive structures cover a portion of the resistive film. The third electrode is electrically connected to the first electrode, the second electrode, or the wiring structure via a connecting structure, conductive material in the first through-hole, and conductive material in the second through-hole. An insulating protective layer is formed on one side of the resistive film and covers the portion of the resistive film not covered by the conductive structure. A welding auxiliary structure is formed on one side of the second electrode and is used for mounting the chip.

[0007] One embodiment of the present invention discloses a thin-film resistor comprising a ceramic substrate, a resistive film, a metal layer, a conductive material, a first electrode, a second electrode, a wiring structure, a third electrode, and an insulating protective layer. The ceramic substrate has a plurality of through holes, each of which penetrates the ceramic substrate. The resistive film is formed on one side of the ceramic substrate. The metal layer is formed on both sides of the ceramic substrate, with some of the metal layer covering some of the resistive film and some of the metal layer forming on the inner walls of the through holes. The conductive material is filled into each of the through holes. The first electrode is formed on one side of some of the metal layers. The second electrode is formed on one side of some of the metal layers. The wiring structure is formed on one side of some of the metal layers. The third electrode is formed on the other side of some of the metal layers and is electrically connected to the first electrode, the second electrode, or the wiring structure via the conductive material. The insulating protective layer is formed on one side of the resistive film and covers the portion of the resistive film not covered by the metal layer.

[0008] From the above, the method for manufacturing electronic components, electronic components, and thin-film resistors according to the present invention can effectively reduce the probability of resistance film failure through the design of the insulating protective layer, and further reduce the problem of short circuits occurring due to unintentional contact of the resistance film with other conductors through the design of the insulating protective layer.

[0009] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention, however, these descriptions and drawings are intended solely to illustrate the present invention and do not limit the scope of protection of the present invention in any way. [Brief explanation of the drawing]

[0010] [Figure 1] This is a flowchart of the first embodiment of the method for manufacturing electronic components according to the present invention. [Figure 2] This is a schematic cross-sectional view of the product after the metal layer formation step in the method for manufacturing electronic components according to the present invention. [Figure 3] This is a schematic cross-sectional view of the product after the conductive structure formation step in the method for manufacturing electronic components according to the present invention. [Figure 4] This is a schematic cross-sectional view of the product after the insulating protective layer formation step in the method for manufacturing electronic components according to the present invention, and is also a schematic cross-sectional view of a thin-film resistor according to the present invention. [Figure 5] This is a schematic cross-sectional view of the product after the welding auxiliary structure formation step in the method for manufacturing electronic components according to the present invention, and is also a schematic cross-sectional view of the first embodiment of the electronic component according to the present invention. [Figure 6] This is a schematic cross-sectional view of an electronic component on which the chip according to the present invention is mounted. [Figure 7] This is a flowchart of a second embodiment of the method for manufacturing electronic components according to the present invention. [Figure 8] This is a schematic cross-sectional view of a second embodiment of the electronic component according to the present invention. [Figure 9] This is a schematic cross-sectional view of a third embodiment of the electronic component according to the present invention. [Modes for carrying out the invention]

[0011] Where references are made to or shown in specific figures in the following explanation, this is solely to emphasize that much of the content related to the subsequent explanation is shown in those specific figures, and does not mean that the subsequent explanation is limited to being interpreted solely based on those specific figures.

[0012] The explanation will be given with reference to Figures 1 to 5. Figure 1 is a flowchart of the first embodiment of the method for manufacturing electronic components according to the present invention. Figures 2 to 5 are schematic cross-sectional views of the product after the metal layer formation step, the product after the conductive structure formation step, the product after the insulating protective layer formation step, and the product after the welding auxiliary structure formation step, respectively, in the method for manufacturing electronic components according to the present invention.

[0013] The method for manufacturing an electronic component according to the present invention includes the following steps.

[0014] Through-hole formation step S1: At least one through-hole 11 is formed in the ceramic substrate 1, and the through-hole 11 penetrates the ceramic substrate 1.

[0015] Resistance film formation step S2: A resistance film 2 is formed on one side of the ceramic substrate 1.

[0016] Metal layer formation step S3: Metal layers 3 are formed on both sides of the ceramic substrate 1, a part of the metal layer 3 covers a part of the resistance film 2, and a part of the metal layer 3 is formed on the inner wall of the through hole 11.

[0017] Conductive structure formation step S4: A conductive structure 4 is formed on one side of the metal layer 3. A part of the conductive structure 4 constitutes a first electrode 41, a second electrode 42 and at least one wiring structure 43 on one side of the ceramic substrate 1. A part of the conductive structure 4 forms a third electrode 44 on the other side of the ceramic substrate 1. The third electrode 44 is electrically connected to the first electrode 41, the second electrode 42 or the wiring structure 43 through a conductive material 45 provided in the through hole 11.

[0018] Insulating protection layer formation step S5: An insulating protection layer 5 is formed on one side of the resistance film 2 so as to cover the portion of the resistance film 2 not covered by the metal layer 3.

[0019] Welding auxiliary structure formation step S6: A welding auxiliary structure 6 used for mounting the chip is formed on one side of the second electrode 42.

[0020] In actual applications, the ceramic substrate 1 is a polished ceramic substrate, and the surface roughness Ra of the ceramic substrate 1 may be less than 0.05 micrometers (μm). As an example, the main component of the ceramic substrate 1 may be 99.6% Al2O3, 96% Al2O3, aluminum nitride (AlN) or zirconia toughened alumina (ZTA). It can be selected as needed and is not limited hereby.

[0021] As shown in Figures 1 and 2, in practice, in the through-hole formation step S1, the ceramic substrate 1 is processed using laser processing so that, for example, through-holes 11 that penetrate the ceramic substrate 1 are formed. There are no particular restrictions on the diameter of each through-hole 11, and in practice, it can be designed based on the thickness of the ceramic substrate 1. For example, if the thickness of the ceramic substrate 1 is 5 to 40 mils, the diameter of each through-hole 11 may be 1 to 5 mils.

[0022] In the resistive film formation step S2, a resistive film 2 is formed on one side of the ceramic substrate 1, for example, using photolithography in combination with the sputtering method. The resistive film 2 is made of, for example, TaN, Ta2N, or Ta x N x It may also be the case that the thickness of the resistive film 2 is 10 to 800 nanometers (nm). In the process of forming the resistive film 2 on one side of the ceramic substrate 1 by sputtering, by adjusting the flow rate of N2, TaN, Ta2N, or Ta x N x The resistive film may be sputtered. The specific pattern of the resistive film 2 can be designed as needed and is not limited thereto.

[0023] In the metal layer formation step S3, a metal layer 3 may be formed on the ceramic substrate 1 using, for example, photolithography in combination with the sputtering method. Furthermore, in the metal layer formation step S3, a metal layer 3 may be formed in the through-hole 11 using PTH (Plated Through Hole) technology. The metal layer 3 is made of a material such as titanium (Ti) or copper (Cu).

[0024] As shown in Figure 2, in the metal layer formation step S3, in a cross-section including the ceramic substrate 1, the resistive film 2, and the metal layer 3, both ends of the resistive film 2 are covered by the metal layer 3 to a extent of at least 10 micrometers. This ensures the connection strength between the metal layer 3 and the first electrode 41 to which it is connected, and the resistive film 2. In the actual manufacturing process, misalignment of the metal layer 3 may occur during the formation process of the metal layer 3. Therefore, the ratio design of the first width D1 and the second width D2 described above ensures that the metal layer 3 accurately covers a portion of the resistive film 2.

[0025] In actual applications, in conductive structure formation step S4, a conductive structure 4 may be formed on one side of the metal layer 3 using techniques such as DPC (Direct Plated Copper) or TFC (Thin Film Ceramic). In one embodiment, the conductive material 45 in the through hole 11 may be the same material as the conductive structure 4, but is not limited to this. In actual applications, the first electrode 41 and the second electrode 42 may be used as, for example, a positive electrode and a negative electrode. Furthermore, the design of the third electrode 44 makes it easier for the relevant personnel or equipment to mount electronic components onto the circuit board. The specific positions and dimensions of the first electrode 41, the second electrode 42, the wiring structure 43, and the third electrode 44 can be designed as needed.

[0026] In one modified example, in the conductive structure formation step S4, first, the conductive material 45 is formed on the outside of the metal layer 3 inside the through-hole 11 so that each through-hole 11 is filled with the metal layer 3 and the conductive material 45, and then the conductive structure 4 is formed on one side of a portion of the metal layer 3. Alternatively, the conductive material 45 and the conductive structure 4 may be made of different metal materials.

[0027] As shown in Figure 3, in the cross-sectional view of the product after the conductive structure formation step S4, the upper part of the resistive film 2, the surrounding conductive structure 4 (i.e., the first electrode 41 and the wiring structure 43), and the metal layer 3 jointly form a groove. As shown in Figure 4, in the cross-sectional view of the product after the insulating protective layer formation step S5, the insulating protective layer 5 fills some of the groove so as not to expose the resistive film 2. Of course, in one embodiment, the insulating protective layer 5 may completely fill the groove, or the insulating protective layer 5 may completely fill the groove, with some of the insulating protective layer 5 protruding from the groove and covering some of the first electrode 41 and some of the wiring structure 43.

[0028] As shown in Figure 4, in actual applications, in the insulating protective layer formation step S5, an insulating protective layer 5 may be formed on the resistive film 2 using, for example, photolithography. The thickness of the insulating protective layer 5 may be, for example, less than 10 micrometers. The material of the insulating protective layer 5 may be, for example, polyamic acid (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin (Epoxy), or SU-8 photoresist. The insulating protective layer 5 completely covers the portion of the resistive film 2 that is not covered by the metal layer 3. This design effectively protects the resistive film 2 and improves its moisture resistance, chemical resistance, and resistance to temperature changes. Furthermore, the insulating protective layer 5 can also prevent the problem of short circuits occurring due to unintentional contact between the resistive film 2 and other conductors. In addition, the insulating protective layer 5 can also physically protect the resistive film 2 to improve its resistance to vibration, bending, and external shocks.

[0029] As shown in Figure 5, in actual applications, in welding auxiliary structure formation step S6, the welding auxiliary structure 6 may be formed on the second electrode 42 using a technique such as vapor deposition. The welding auxiliary structure 6 may be made of, for example, a gold-tin alloy (AuSn). Furthermore, the thickness of the welding auxiliary structure 6 may be 2 to 6 micrometers (μm), and the weight percentage of gold in the welding auxiliary structure 6 may be 65 to 80%.

[0030] The explanation will be given with reference to Figures 1, 5, and 6. Figure 6 is a schematic cross-sectional view of an electronic component on which a chip according to the present invention is mounted. In one embodiment, after the welding auxiliary structure formation step S6, a chip mounting step may be included in which a chip 7 is mounted on the welding auxiliary structure 6 and the chip 7 is connected to the first electrode 41. For example, the chip 7 may be a light-emitting diode, a power supply chip, etc., and the type of chip 7 is not limited thereto.

[0031] The following explanation will be given with reference to Figures 4 and 5. Figure 4 is a schematic cross-sectional view of a thin-film resistor according to the present invention, and Figure 5 is a schematic cross-sectional view of a first embodiment of an electronic component according to the present invention. The thin-film resistor 100 and the electronic component 200 according to the present invention may be manufactured, for example, using the manufacturing method of the electronic component according to the present invention described above, but are not limited thereto. As shown in Figure 4, the thin-film resistor 100 according to this embodiment comprises a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a wiring structure 43, a third electrode 44, a conductive material 45, an insulating protective layer 5, and an insulating protective layer 5. As shown in Figure 5, the electronic component 200 according to this embodiment comprises a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a wiring structure 43, a third electrode 44, a conductive material 45, an insulating protective layer 5, and a welding auxiliary structure 6. Details of these components included in the thin-film resistor 100 and the electronic component 200 according to the present invention can be found in the embodiments described above, and a detailed explanation is omitted here.

[0032] The explanation will be given with reference to Figures 5 and 7. Figure 7 is a flowchart of a second embodiment of the method for manufacturing electronic components according to the present invention. The main difference between this embodiment and the previously described embodiment is that the following additional steps are included between the conductive structure formation step S4 and the insulating protective layer formation step S5.

[0033] Annealing step SX: The product manufactured in conductive structure formation step S4 is baked in an oxygen-free environment at a temperature of 200-400 degrees Celsius (°C).

[0034] Laser step SY: A laser is used to trim the resistive film 2 and adjust its resistance value to a predetermined resistance range.

[0035] The annealing step SX design stabilizes the resistance value of the resistive film 2 and reduces its resistance range. For example, while the resistance value range of the resistive film 2 is 9 to 12 ohms before the annealing step SX, after the annealing step SX, the resistance value range of the resistive film 2 can be reduced to 8.4 to 8.5 ohms.

[0036] In laser step SY, the resistive film 2 is trimmed using a UV laser or a green laser to adjust its resistance value. In practice, for example, laser step SY may be used to control the accuracy error range of the resistance value of the resistive film 2 to within ±1%.

[0037] It should be noted that the method for manufacturing electronic components according to the first embodiment can also be configured by combining only the annealing step SX to form another embodiment, or the method for manufacturing electronic components according to the first embodiment can also be configured by combining only the laser step SY to form another embodiment.

[0038] The explanation will be given with reference to Figure 8. Figure 8 is a schematic cross-sectional view of a second embodiment of the electronic component according to the present invention. The electronic component 300 according to this embodiment comprises a first ceramic substrate 1A, a second ceramic substrate 1B, a connection structure 1C, a resistive film 2, a conductive structure 4, an insulating protective layer 5, and a welding auxiliary structure 6.

[0039] The first ceramic substrate 1A has a plurality of first through holes 12, each of which penetrates the first ceramic substrate 1A. The second ceramic substrate 1B has a plurality of second through holes 13, each of which penetrates the second ceramic substrate 1B. The first ceramic substrate 1A is connected to the second ceramic substrate 1B via a connecting structure 1C. The connecting structure 1C may be a metallic paint such as silver paste, for example. It can be selected as needed and is not limited thereto. The connecting structure 1C, the conductive material 8 in the first through holes 12, and the conductive material 9 in the second through holes 13 are electrically connected. The connecting structure 1C, the conductive material 8, and the conductive material 9 may be the same material, for example, or they may be different materials.

[0040] The resistive film 2 is formed on one side of the first ceramic substrate 1A. A portion of the conductive structure 4 is formed on one side of the first ceramic substrate 1A, with a portion of the conductive structure 4 constituting the first electrode 41 and a portion of the conductive structure 4 constituting the second electrode 42. The portion of the conductive structure 4 located on the first ceramic substrate 1A covers a portion of the resistive film 2. A third electrode 44 is provided on one side of the second ceramic substrate 1B. The third electrode 44 is electrically connected to the first electrode 41, the second electrode 42, or the wiring structure 43 via the connection structure 1C, the conductive material 8 in the first through hole 12, and the conductive material 9 in the second through hole 13. Details of the resistive film 2, the insulating protective layer 5, and the welding auxiliary structure 6 can be found in the previously described embodiments and are omitted here. In actual applications, the conductive structure 4 and the third electrode 44 may be made of the same material, but are not limited to this. In another example, the conductive structure 4 and the third electrode 44 may be made of different materials.

[0041] The explanation will be given with reference to Figure 9. Figure 9 is a schematic cross-sectional view of a third embodiment of the electronic component according to the present invention. The electronic component 400 according to this embodiment comprises a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a wiring structure 43, a third electrode 44, a conductive material 45, an insulating protective layer 5, and a welding auxiliary structure 6. The difference between this embodiment and the electronic component shown in Figure 5 is that the metal layer 3 is formed only within the through hole 11, but the metal layer 3 is not formed on both sides of the ceramic substrate 1, and a part of the resistive film 2 is covered by the wiring structure 43. Details of the ceramic substrate 1, resistive film 2, metal layer 3, first electrode 41, second electrode 42, wiring structure 43, third electrode 44, conductive material 45, insulating protective layer 5, and welding auxiliary structure 6 can be found in the previously described embodiment, and a detailed explanation is omitted here.

[0042] In summary, the electronic component, thin-film resistor, and method for manufacturing the electronic component according to the present invention effectively improve the service life of the resistive film and the reliability of the resistive film by combining a design in which a metal layer covers the resistive film or a wiring structure covers the resistive film with a design in which an insulating protective layer is formed on one side of the resistive film.

[0043] The foregoing describes only preferred embodiments of the present invention and does not limit the scope of the claims of the present invention. Accordingly, all equivalent technical modifications made using the specification and drawings of the present invention are all within the scope of protection of the present invention. [Explanation of symbols]

[0044] 100: Thin film resistor 200: Electronic components 300: Electronic components 400: Electronic components 1: Ceramic substrate 1A: First ceramic substrate 1B: Second ceramic substrate 1C: Connection structure 11: Through hole 12: First through hole 13: Second through hole 2: Resistive film 3: Metal layer 4: Conductive structure 41: 1st electrode 42:Second electrode 43:Wiring structure 44:Third electrode 45: Conductive materials 5: Insulating protective layer 6: Welding support structure 7: Tip 8: Conductive materials 9: Conductive materials D1: 1st width D2: 2nd width S1: Through-hole forming step S2: Resistive film formation step S3: Metal layer formation step S4: Step for forming a sufficiently structured structure S5: Insulation protective layer formation step S6: Welding auxiliary structure formation step SX: Annealing Step SY: Laser Step

Claims

1. A through-hole forming step in which at least one through-hole is formed in a ceramic substrate, and the through-hole penetrates the ceramic substrate, A resistive film forming step of forming a resistive film on one side of the ceramic substrate, A metal layer forming step, in which a metal layer is formed on both sides of the ceramic substrate, a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the through hole, A conductive structure forming step, wherein a conductive structure is formed on one side of the metal layer, a portion of the conductive structure constitutes a first electrode, a second electrode and at least one wiring structure on one side of the ceramic substrate, a portion of the conductive structure forms a third electrode on the other side of the ceramic substrate, and the third electrode is electrically connected to the first electrode, the second electrode or the wiring structure via a conductive material provided in the through hole, An insulating protective layer forming step, in which an insulating protective layer is formed on one side of the resistive film so as to cover the portion of the resistive film that is not covered by the metal layer, The step includes forming a welding auxiliary structure on one side of the second electrode, which is used for mounting the chip. Manufacturing methods for electronic components.

2. In the metal layer formation step, in a cross-section including the ceramic substrate, the resistive film, and the metal layer, both ends of the resistive film are covered by the metal layer in portions of at least 10 micrometers. A method for manufacturing an electronic component according to claim 1.

3. The thickness of the insulating protective layer is less than 10 micrometers. The material of the insulating protective layer is polyamic acid (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin (Epoxy), or SU-8 photoresist. A method for manufacturing an electronic component according to claim 1.

4. The resistive film is TaN, Ta ２ N or Ta ｘ N ｘ And, The thickness of the resistive film is 10 to 800 nanometers (nm). A method for manufacturing an electronic component according to claim 1.

5. The welding auxiliary structure is made of gold-tin alloy (AuSn), and the thickness of the welding auxiliary structure is 2 to 6 micrometers (μm). The weight percentage of gold in the aforementioned welding auxiliary structure is 65-80%. A method for manufacturing an electronic component according to claim 1.

6. Between the conductive structure formation step and the insulating protective layer formation step, there is further an annealing step in which the product manufactured in the conductive structure formation step is baked in an oxygen-free environment at a temperature of 200 to 400 degrees Celsius. A method for manufacturing an electronic component according to claim 1.

7. Between the annealing step and the insulating protective layer formation step, a laser step is further included in which the resistive film is trimmed using a laser and the resistance value of the resistive film is adjusted to a predetermined resistance range. A method for manufacturing an electronic component according to claim 6.

8. A ceramic substrate having multiple through holes, wherein each of the through holes penetrates the ceramic substrate, A resistive film formed on one side of the ceramic substrate, A metal layer formed on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the through hole, A conductive material is filled into each of the through holes, A first electrode formed on one side of a portion of the metal layer, A second electrode formed on one side of a portion of the aforementioned metal layer, A wiring structure formed on one side of a portion of the metal layer, A third electrode is formed on the other side of a portion of the metal layer and is electrically connected to the first electrode, the second electrode, or the wiring structure via the conductive material, An insulating protective layer formed on one side of the resistive film, covering the portion of the resistive film not covered by the metal layer, The second electrode comprises a welding auxiliary structure formed on one side of the second electrode and used for mounting the chip, Electronic components.

9. In a cross-section including the ceramic substrate, the resistive film, and the metal layer, both ends of the resistive film are covered by the metal layer in portions of at least 10 micrometers. The electronic component according to claim 8.

10. The thickness of the insulating protective layer is less than 10 micrometers. The material of the insulating protective layer is polyamic acid (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin (Epoxy), or SU-8 photoresist. The electronic component according to claim 8.

11. The resistive film is TaN, Ta ２ N or Ta ｘ N ｘ And, The thickness of the resistive film is 10 to 800 nanometers (nm). The electronic component according to claim 8.

12. The welding auxiliary structure is made of gold-tin alloy (AuSn), and the thickness of the welding auxiliary structure is 2 to 6 micrometers (μm). The weight percentage of gold in the aforementioned welding auxiliary structure is 65-80%. The electronic component according to claim 8.

13. The materials constituting the first electrode, the second electrode, and the third electrode are different from the conductive material, and the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold. The electronic component according to claim 8.

14. A first ceramic substrate having a plurality of first through holes, wherein each of the first through holes penetrates the first ceramic substrate, A second ceramic substrate having a plurality of second through holes, wherein each of the second through holes penetrates the second ceramic substrate, and a third electrode is formed on one side of the second ceramic substrate, A connection structure wherein the first ceramic substrate is connected to the second ceramic substrate via the connection structure, and the connection structure, the conductive material in the first through-hole, and the conductive material in the second through-hole are electrically connected to each other. A resistive film formed on one side of the first ceramic substrate, A conductive structure formed on one side of the first ceramic substrate, wherein a portion of the conductive structure constitutes a first electrode, a portion of the conductive structure constitutes a second electrode, a portion of the conductive structure constitutes at least one wiring structure, a portion of the conductive structure covers a portion of the resistive film, and the third electrode is a conductive structure electrically connected to the first electrode, the second electrode, or the wiring structure via the connecting structure, the conductive material in the first through-hole, and the conductive material in the second through-hole. An insulating protective layer formed on one side of the resistive film, covering the portion of the resistive film not covered by the conductive structure, The second electrode comprises a welding auxiliary structure formed on one side of the second electrode and used for mounting the chip, Electronic components.

15. A ceramic substrate having multiple through holes, wherein each of the through holes penetrates the ceramic substrate, A resistive film formed on one side of the ceramic substrate, A metal layer formed on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the through hole, A conductive material is filled into each of the aforementioned through holes, A first electrode formed on one side of a portion of the metal layer, A second electrode formed on one side of a portion of the aforementioned metal layer, A wiring structure formed on one side of a portion of the metal layer, A third electrode is formed on the other side of a portion of the metal layer and is electrically connected to the first electrode, the second electrode, or the wiring structure via the conductive material, The resistive film comprises an insulating protective layer formed on one side of the resistive film and covering the portion of the resistive film not covered by the metal layer, Thin film resistor.

16. In a cross-section including the ceramic substrate, the resistive film, and the metal layer, both ends of the resistive film are covered by the metal layer in portions of at least 10 micrometers. The thin-film resistor according to claim 15.

17. The thickness of the insulating protective layer is less than 10 micrometers. The material of the insulating protective layer is polyamic acid (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin (Epoxy), or SU-8 photoresist. The thin-film resistor according to claim 15.

18. The resistive film is TaN, Ta ２ N or Ta ｘ N ｘ and is The thickness of the resistive film is 10 to 800 nanometers (nm). The thin-film resistor according to claim 15.

19. The materials constituting the first electrode, the second electrode, and the third electrode are different from the conductive material, and the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold. The thin-film resistor according to claim 15.

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