Robust, abrasive hard mask

Halogen-containing precursors in PECVD processes enhance the etching resistance and selectivity of AHMs by reducing hydrogen content, addressing the limitations of current AHMs in semiconductor processing.

JP2026094245APending Publication Date: 2026-06-09LAM RES CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
LAM RES CORP
Filing Date
2026-02-25
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Current amorphous carbon films used as ashingable hard masks (AHMs) in semiconductor processing face challenges with low etching selectivity and high hydrogen content, which affect their performance in high aspect ratio etching applications.

Method used

The use of halogen-containing precursors in plasma-enhanced chemical vapor deposition (PECVD) processes to form AHMs with reduced hydrogen and halogen content, improving etching resistance and selectivity by forming halogen-containing films with lower hydrogen content and higher density.

Benefits of technology

The resulting AHMs exhibit improved etching selectivity and reduced etching rates, maintaining deposition rates and film properties, making them suitable for high aspect ratio etching processes.

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Abstract

The present invention provides a method and apparatus for forming an ashingable hard mask (AHM) with improved etching resistance by using a halogen-containing precursor. [Solution] The method includes depositing AHM on a layer to be etched by plasma-enhanced chemical vapor deposition (PECVD), depositing, exposing and developing a photoresist layer according to a desired etching pattern, opening the AHM film by etching the exposed portions of the AHM, selectively etching a substrate layer to transfer the pattern to the substrate layer, and removing the AHM using a technique called ashing, plasma ashing, or dry stripping.
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