Detection device

Abstract

The present invention provides a detection device with different pressure sensitivity ranges for the detection electrodes. [Solution] The detection device has an array substrate and a sensor layer stacked in order. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes provided on the first surface and separated from the sensor layer. The plurality of detection electrodes include a plurality of aperture detection electrodes in which openings are formed that expose the first surface. The plurality of aperture detection electrodes include two or more types of aperture detection electrodes with different numbers of openings.

Description

【Technical Field】 【0001】 The present invention relates to a detection device. 【Background Art】 【0002】 A detection device is a device that detects a load (pressure) acting perpendicular to a detection surface. The detection device includes a protective layer, a sensor layer, and an array substrate laminated in order from the detection surface side. Note that one surface of the protective layer constitutes the detection surface. Further, the array substrate of Patent Document 1 below has detection electrodes and common electrodes disposed on a surface facing the sensor layer. The sensor layer has contact surfaces facing each of the detection electrodes and the common electrodes and separated from each of the detection electrodes and the common electrodes. When pressure is input to the detection surface, the contact surfaces move toward the detection electrodes and the common electrodes and contact each of the detection electrodes and the common electrodes. As a result, current flows from the common electrode to the detection electrode through the sensor layer. Further, when the pressure input to the detection surface is large, the contact area of the contact surfaces contacting the common electrode and the detection electrode increases. As a result, the current flowing from the common electrode to the detection electrode increases. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent Application Laid-Open No. 2023-109115 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 By the way, the pressure input to the detection device may be large or small. Therefore, it is desired to achieve both a large pressure-sensitive range for detecting a large pressure and a small pressure-sensitive range for accurately detecting a small pressure. 【0005】 An object of the present invention is to provide a detection device having detection electrodes with different pressure-sensitive ranges. 【Means for Solving the Problems】 【0006】 A detection device according to a first aspect of the present disclosure has an array substrate and a sensor layer stacked in order. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes provided on the first surface and spaced apart from the sensor layer. The plurality of detection electrodes include a plurality of aperture detection electrodes having openings formed therein that expose the first surface. The plurality of aperture detection electrodes include two or more types of aperture detection electrodes with different numbers of openings. 【0007】 A detection device according to a second aspect of the present disclosure has an array substrate and a sensor layer stacked in order. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes provided on the first surface and spaced apart from the sensor layer. The plurality of detection electrodes includes a plurality of protruding detection electrodes, each having a protrusion that projects toward the sensor layer. The plurality of protruding detection electrodes includes two or more types of protruding detection electrodes with different numbers of protrusions. [Brief explanation of the drawing] 【0008】 [Figure 1] Figure 1 is a schematic diagram of the detection device according to Embodiment 1, viewed from the front. [Figure 2] Figure 2 is a schematic diagram of a cross-section of the detection device of Embodiment 1, and more specifically, it is a schematic cross-sectional view of the cross-section taken along line II-II in Figure 4. [Figure 3] Figure 3 is an enlarged view of a portion of the first surface (four individual detection regions) of the array substrate of Embodiment 1, as seen from the sensor layer side. [Figure 4] Figure 4 is an enlarged view of a portion of the first surface (one individual detection area) of the array substrate of Embodiment 1, as seen from the sensor layer side. [Figure 5] Figure 5 is a circuit diagram showing the circuit configuration of the detection device of Embodiment 1. [Figure 6] Figure 6 is a schematic cross-sectional view showing the state in which pressure is applied to individual detection regions where flat plate detection electrodes are arranged in the detection device of Embodiment 1. [Figure 7]Figure 7 is a schematic cross-sectional view showing the state in which pressure is applied to an individual detection region where an aperture detection electrode (third aperture detection electrode) is located in the detection device of Embodiment 1. [Figure 8] Figure 8 is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing through the detection electrode in the detection device of Embodiment 1. [Figure 9] Figure 9 is a cross-sectional view of the detection device of Embodiment 2, cut in the stacking direction, and more specifically, it is a schematic diagram illustrating the cross-section cut along the line IX-IX in Figure 10. [Figure 10] Figure 10 is an enlarged view of a portion of the first surface (four individual detection regions) of the array substrate of Embodiment 2, as seen from the sensor layer side. [Figure 11] Figure 11 is a cross-sectional view of the detection device of Embodiment 2, showing the state in which pressure is applied to individual detection regions where convex detection electrodes are arranged. [Figure 12] Figure 12 is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing through the detection electrode in the detection device of Embodiment 2. [Modes for carrying out the invention] 【0009】 Embodiments for implementing the detection device of this disclosure will be described in detail with reference to the drawings. The invention of this disclosure is not limited by the contents described in the following embodiments. Furthermore, the components described below include those that can be easily conceived by a person skilled in the art, and those that are substantially the same. Moreover, the components described below can be combined as appropriate. It should be noted that the disclosure is merely an example, and any modifications that can be easily conceived by a person skilled in the art while maintaining the spirit of the invention are naturally included within the scope of the present invention. In order to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components that are the same as those described above with respect to previously shown drawings are denoted by the same reference numerals, and detailed explanations may be omitted as appropriate. 【0010】 Furthermore, in this specification and the claims, when describing a manner in which one structure is placed on top of another structure, unless otherwise specified, the term "on top of" includes both cases: when one structure is placed directly on top of another structure so as to be in contact with it, and when another structure is placed above another structure via yet another structure. 【0011】 (Embodiment 1) Figure 1 is a schematic diagram of the detection device according to Embodiment 1, viewed from the front. The detection device 100 is a device that detects the pressure acting on the detection surface 1. As shown in Figure 1, the detection device 100 is formed in a flat plate shape. The detection device 100 has a planar surface (detection surface 1) and a planar back surface 2 (not shown in Figure 1; see Figure 2). The detection device 100 is rectangular when viewed from the direction normal to the detection surface 1. Since the detection device 100 shown in Figure 1 has a planar detection surface 1, it can detect the pressure distribution within the detection surface 1. 【0012】 The detection surface 1 is divided into a detection area 3 where pressure can be detected and a peripheral area 4 where pressure cannot be detected. The detection area 3 is located in the center of the detection surface 1. The peripheral area 4 is formed in a frame shape and surrounds the outside of the detection area 3. 【0013】 The detection area 3 is formed as a rectangle when viewed from the normal direction of the detection surface 1. Therefore, the outer frame M of the detection area 3 has a pair of short sides 3a and a pair of long sides 3b. Hereinafter, the direction parallel to the detection surface 1 and parallel to the short sides 3a will be referred to as the first direction X. The direction parallel to the detection surface 1 and parallel to the long sides 3b will be referred to as the second direction Y. Therefore, the second direction Y is perpendicular (intersecting) to the first direction X. Furthermore, in the following, the direction parallel to the detection surface 1 may be referred to as the planar direction. 【0014】 The detection area 3 is divided into a plurality of individual detection areas 5. In other words, the detection area 3 is a collection of a plurality of individual detection areas 5. And the pressure value is detected in each of the individual detection areas 5. When viewed from the normal direction of the detection surface 1, the individual detection area 5 is square-shaped. The plurality of individual detection areas 5 are arranged in the first direction X and the second direction Y. 【0015】 FIG. 2 is a schematic cross-sectional view of the detection device according to Embodiment 1, and more specifically, it is a cross-sectional view schematically showing the cross-section cut along line II-II in FIG. 4. As shown in FIG. 2, the detection device 100 includes an array substrate 10, a sensor layer 70, and a protection layer 80 stacked in this order. Hereinafter, the direction in which the array substrate 10, the sensor layer 70, and the protection layer 80 are stacked is referred to as the stacking direction. Note that the normal direction of the detection surface 1 described above has the same meaning as the stacking direction. Also, among the stacking directions, the direction in which the sensor layer 70 is arranged when viewed from the array substrate 10 is referred to as the first stacking direction Z1, and the opposite direction is referred to as the second stacking direction Z2. Viewing from the first stacking direction Z1 is referred to as a plan view. 【0016】 The array substrate 10 includes a base material 11 and an array layer 12 formed on the surface of the base material 11 in the first stacking direction Z1. The base material 11 is a plate-like member that supports the array layer 12 and has insulating properties. Examples of the base material 11 include a flexible substrate formed of polyimide, but the present disclosure is not limited thereto. Also, the surface of the base material 11 in the second stacking direction Z2 constitutes the back surface 2 of the detection device 100. 【0017】 The array layer 12 has a first insulating layer 13, a second insulating layer 14, and a third insulating layer 15 stacked in this order on the surface of the base material 11 in the first stacking direction Z1. Note that a gate insulating film 42 of a transistor 4 is provided between the first insulating layer 13 and the second insulating layer 14, which will be described later. 【0018】 The first insulating layer 13, the second insulating layer 14, and the third insulating layer 15 are formed of an insulating material. The insulating material may be either an inorganic or organic material. The third insulating layer 15 is a layer (planarization film) for planarizing the first surface 16 of the array layer 12 in the first stacking direction Z1. Although the array layer 12 in this embodiment has three insulating layers, this disclosure does not particularly limit the number of insulating layers. 【0019】 The first surface 16 of the array layer 12 has a detection electrode 20, a common electrode 30, a first contact hole 6, and a second contact hole 7 formed thereon. The detection electrode 20 and the common electrode 30 are metal films (metal layers) deposited on the first surface 16 using a metallic material such as ITO (Indium Tin Oxide). 【0020】 Figure 3 is an enlarged view of a portion of the first surface (four individual detection areas) of the array substrate of Embodiment 1, viewed from the sensor layer. Figure 4 is an enlarged view of a portion of the first surface (one individual detection area) of the array substrate of Embodiment 1, viewed from the sensor layer. In Figures 3 and 4, dots have been added to the detection electrode 20 and the common electrode 30 to make them easier to see. 【0021】 As shown in Figures 3 and 4, multiple detection electrodes 20 are formed on the first surface 16. One detection electrode 20 is placed for each individual detection region 5. The detection electrodes 20 are located in the center of each individual detection region 5. When viewed from above, the outer shape of the detection electrode 20 is square. 【0022】 Some of the multiple detection electrodes 20 have an opening 27. The opening 27 penetrates the detection electrode 20 in the stacking direction. Therefore, the first surface 16 is exposed through the opening 27. The opening 27 is square in plan view. Hereinafter, the detection electrode 20 in which the opening 27 is formed will be referred to as the aperture detection electrode 21. 【0023】 The multiple aperture detection electrodes 21 include those with different numbers of openings 27. Specifically, the types of aperture detection electrodes 21 include a first aperture detection electrode 22 with nine openings 27, a second aperture detection electrode 23 with thirteen openings 27, and a third aperture detection electrode 24 with twenty-five openings 27. 【0024】 Furthermore, among the multiple detection electrodes 20, there are detection electrodes 20 in which no opening 27 is formed. Hereinafter, the detection electrodes 20 in which the opening 27 is formed will be referred to as the flat plate detection electrode 25. In this embodiment, four adjacent individual detection regions 5 are treated as a set, and the four detection electrodes 20 arranged in these four individual detection regions 5 are the first aperture detection electrode 22, the second aperture detection electrode 23, the third aperture detection electrode 24, and the flat plate detection electrode 25. 【0025】 As shown in Figures 3 and 4, multiple common electrodes 30 are formed on the first surface 16. The common electrodes 30 are formed in a rectangular frame shape in a plan view. One common electrode 30 is placed for each individual detection region 5. The detection electrodes 20 are placed inside the common electrodes 30, and the common electrodes 30 surround the detection electrodes 20. Furthermore, the common electrodes 30 and the detection electrodes 20 are separated in the planar direction on the first surface 16 and are not connected. 【0026】 The first contact hole 6 and the second contact hole 7 are holes extending from the first surface 16 of the array substrate 10 in the second stacking direction Z2 (see Figure 2). As shown in Figure 4, one first contact hole 6 and one second contact hole 7 are formed for each individual detection region 5. The first contact hole 6 is located in the portion of the first surface 16 covered by the detection electrode 20. The second contact hole 7 is located in the portion of the first surface 16 covered by the common electrode 30. As a result, as shown in Figure 2, a portion of the detection electrode 20 is located in the first contact hole 6 to form the first contact portion 29. Also, a portion of the common electrode 30 is located in the second contact hole 7 to form the second contact portion 39. 【0027】 Figure 5 is a circuit diagram showing the circuit configuration of the detection device of Embodiment 1. As shown in Figure 5, the array layer 12 contains a transistor 40, a gate line 46, a signal line 47, a reference potential wiring 48, a connection part 50 (see Figure 1), a gate line drive circuit 51 (see Figure 1), a signal line selection circuit 52 (see Figure 1), and a common wiring 53 (see Figure 1). In addition, multiple transistors 40, gate lines 46, signal lines 47, and reference potential wiring 48 are formed in the array layer 12 (array substrate 10). 【0028】 Transistor 40 is a switching element. Multiple transistors 40 are arranged one at a time for each individual detection region 5. As shown in Figure 2, transistor 40 comprises a semiconductor layer 41, a gate insulating film 42, a gate electrode 43, a drain electrode 44, and a source electrode 45. The end of the source electrode 45 in the first stacking direction Z1 is connected to a connecting wire 49. The connecting wire 49 extends in the planar direction (see Figure 4) and is connected to the first contact portion 29. Therefore, the source electrode 45 is connected to the detection electrode 20 via the connecting wire 49 and the first contact portion 29. 【0029】 As shown in Figure 5, the gate line 46 extends in the first direction X. Multiple gate lines 46 are arranged in the second direction Y. As shown in Figure 4, the gate line 46 is provided with a branch portion 46a that extends in the second direction Y. The branch portion 46a is provided in each individual detection region 5. The gate line 46 is connected to each gate electrode 43 (see Figure 2) of the multiple transistors 40 arranged in the first direction X via the branch portion 46a. 【0030】 As shown in Figure 5, the signal line 47 extends in the second direction Y. Multiple signal lines 47 are arranged in the first direction X. The signal line 47 is connected to the drain electrodes 44 (see Figure 2) of multiple transistors 40 arranged in the second direction Y. 【0031】 As shown in Figure 5, the reference potential wiring 48 extends in the second direction Y. Multiple reference potential wirings 48 are arranged in the first direction X. As shown in Figure 2, the reference potential wiring 48 is connected to the second contact portion 39 of the common electrode 30. 【0032】 As shown in Figure 1, the connection section 50, gate line drive circuit 51, signal line selection circuit 52, and common wiring 53 are located in the peripheral region 4 of the array layer 12. The connection section 50 is for connecting to a drive IC (Integrated Circuit) located outside the detection device 100. The drive IC may be mounted as COF (Chip On Film) on a flexible printed circuit board or rigid board connected to the connection section 50. Alternatively, the drive IC may be mounted as COG (Chip On Glass) in the peripheral region 4 of the array substrate 10. 【0033】 The gate line drive circuit 51 is a circuit that drives multiple gate lines 46 (see Figure 5) based on various control signals from the drive IC. The gate line drive circuit 51 sequentially or simultaneously selects multiple gate lines 46 and supplies gate drive signals to the selected gate lines 46. 【0034】 The signal line selection circuit 52 is a switch circuit that sequentially or simultaneously selects multiple signal lines 47 (see Figure 5). The signal line selection circuit 52 is, for example, a multiplexer. Based on the selection signal supplied from the drive IC, the signal line selection circuit 52 connects the selected signal line 47 to the drive IC. Since the detection region 3 is equipped with a transistor 40, a gate line 46, signal lines 47, and a reference potential wiring 48, the detection device 100 can measure the change in the pressure distribution in the plane over time. 【0035】 The common wiring 53 is connected to the drive IC via the connection part 50, and a constant amount of current is supplied from the drive IC. The common wiring 53 extends along the surrounding region and is ring-shaped. The reference potential wiring 48 is connected to the common wiring 53. As a result, a constant amount of current is supplied to the common electrode 30. 【0036】 As shown in Figure 2, the sensor layer 70 is formed from a conductive resin material (hereinafter referred to as conductive resin material) and is in the shape of a flat plate. The sensor layer 70 is bonded to the surface 81 of the protective layer 80 in the second stacking direction Z2 and is integrated with the protective layer 80. The surface of the sensor layer 70 in the second stacking direction Z2 is the contact surface 71. The contact surface 71 faces the first surface 16 of the array substrate 10. The contact surface 71 is also separated from the detection electrode 20 and the common electrode 30. Therefore, a space S is formed between the contact surface 71 and the first surface 16. 【0037】 As shown in Figure 2, the protective layer 80 is made of an elastically deformable and insulating material, such as rubber or resin. The surface of the protective layer 80 in the first lamination direction is the detection surface 1. In addition, the integrated sensor layer 70 and protective layer 80 are bonded to the array substrate 10 via a frame-shaped frame portion (not shown) in the area overlapping with the peripheral region 4. 【0038】 Figure 6 is a schematic cross-sectional view showing the state in which pressure is applied to the individual detection region 5 where the flat plate detection electrode is located in the detection device of Embodiment 1. Figure 7 is a schematic cross-sectional view showing the state in which pressure is applied to the individual detection region 5 where the aperture detection electrode (third aperture detection electrode) is located in the detection device of Embodiment 1. Next, the case in which pressure is applied to the individual detection region 5 will be described. 【0039】 As shown in Figures 6 and 7, when pressure F1 is applied to the detection surface 1, the protective layer 80 and sensor layer 70 of the individual detection region 5 to which pressure F1 is applied deform in the second stacking direction Z2. Then, a part of the contact surface 71 of the sensor layer 70 comes into contact with the detection electrode 20. As a result, current flows from the common electrode 30 to the detection electrode 20 via the sensor layer 70 (see arrows A1 in Figure 6 and A2 in Figure 7). 【0040】 Furthermore, as the pressure F1 increases, the amount of deformation of the sensor layer 70 in the second stacking direction Z2 also increases. In other words, the contact area between the sensor layer 70 and the detection electrode 20 increases, and the amount of current flowing from the common electrode 30 to the detection electrode 20 also increases. The electrical signal (current value) input to the detection electrode 20 is then output to the drive IC via the signal line 47. The drive IC determines the load input to the individual detection area 5 based on the magnitude of the current value. 【0041】 In this embodiment, as shown in Figure 7, the aperture detection electrode 21 (the third aperture detection electrode 24 is shown in Figure 7) has multiple openings 27. Therefore, even at the same pressure, the contact area with the sensor layer 70 is smaller for the aperture detection electrode 21 than for the flat plate detection electrode 25. Consequently, the amount of current flowing through the aperture detection electrode 21 (arrow A2 in Figure 7) is smaller than the amount of current flowing through the flat plate detection electrode 25 (see arrow A1 in Figure 6). 【0042】 Figure 8 is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing through the detection electrode in the detection device of Embodiment 1. Next, the relationship between the contact area between the sensor layer 70 and the detection electrode 20 and the amount of current flowing through the detection electrode 20 will be explained. When the contact area between the sensor layer 70 and the detection electrode 20 does not exceed a predetermined amount (threshold), there is a proportional relationship where the current flowing through the detection electrode 20 increases as the contact area between the sensor layer 70 and the detection electrode 20 increases. On the other hand, when the contact area between the sensor layer 70 and the detection electrode 20 exceeds a predetermined amount (threshold), the rate of increase in the amount of current to the detection electrode 20 relative to the rate of increase in the contact area becomes small, and the proportional relationship does not hold. Note that when detecting the pressure value, the range in which the proportional relationship holds is used. 【0043】 More specifically, as shown in Figure 8, a proportional relationship exists between the input pressure value of the individual detection region 5 where the flat plate detection electrode 25 is located, in the range from 0 (zero) to B1. On the other hand, when the pressure value exceeds B1, the proportional relationship does not hold. In other words, in the individual detection region 5 where the flat plate detection electrode 25 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B1. Therefore, the pressure sensitivity range (the magnitude of the pressure that can be detected) of the individual detection region 5 where the flat plate detection electrode 25 is located is in the range of pressure from 0 (zero) to B1. 【0044】 On the other hand, the first aperture detection electrode 22 has an opening 27, and even when the pressure value is B1, the contact area does not reach the threshold. Therefore, in the individual detection region 5 where the first aperture detection electrode 22 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B2, which is greater than B1. From the above, the pressure sensitivity range of the individual detection region 5 where the first aperture detection electrode 22 is located is from a pressure of 0 (zero) to B2. 【0045】 Because the second aperture detection electrode 23 has a larger opening 27 than the first aperture detection electrode 22, the contact area with the sensor layer 70 does not reach the threshold even when the pressure value is B2. In the individual detection region 5 where the second aperture detection electrode 23 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B3, which is greater than B2. Therefore, the pressure sensitivity range of the individual detection region 5 where the second aperture detection electrode 23 is located is from a pressure of 0 (zero) to B3. 【0046】 Because the third aperture detection electrode 24 has a larger opening 27 than the second aperture detection electrode 23, the contact area with the sensor layer 70 does not reach the threshold even when the pressure value is B3. Therefore, in the individual detection region 5 where the third aperture detection electrode 24 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B4, which is greater than B3. From the above, the pressure sensitivity range of the individual detection region 5 where the third aperture detection electrode 24 is located is from a pressure of 0 (zero) to B4. 【0047】 As described above, in the detection device 100 of Embodiment 1, the pressure sensitivity range of each individual detection region 5 where the flat plate detection electrode 25, the first aperture detection electrode 22, the second aperture detection electrode 23, and the third aperture detection electrode 24 are arranged is different. Furthermore, the pressure sensitivity range increases in the order of the flat plate detection electrode 25, the first aperture detection electrode 22, the second aperture detection electrode 23, and the third aperture detection electrode 24. 【0048】 In addition, in Embodiment 1, the aperture detection electrode 21 has an opening 27, and its installation area when viewed from above is smaller than that of the flat plate detection electrode. For this reason, the maximum current flowing through each detection electrode 20 (see vertical axes E1, E2, E3, and E4 in Figure 8) is not the same, and is smaller in the order of flat plate detection electrode 25, first aperture detection electrode 22, second aperture detection electrode 23, and third aperture detection electrode 24. 【0049】 Embodiment 1 has been described above. In Embodiment 1, the opening 27 is rectangular, but this disclosure does not particularly limit the shape of the opening. Also, in Embodiment 1, one of the four detection electrodes 20 is a flat plate detection electrode 25, but in this disclosure, all four detection electrodes 20 may be aperture detection electrodes 21. Also, in this embodiment, there are three types of aperture detection electrodes 21 with different numbers of openings 27, but in this disclosure, it is sufficient to have two or more types. Next, the detection device 100A of Embodiment 2 will be described. In Embodiment 2, the differences from Embodiment 1 will be described in detail. 【0050】 (Embodiment 2) Figure 9 is a cross-sectional view of the detection device of Embodiment 2, cut in the stacking direction, and more specifically, a schematic diagram illustrating the cross-section cut along the line IX-IX in Figure 10. Figure 10 is an enlarged view of a part of the first surface (four individual detection regions) of the array substrate of Embodiment 2, viewed from the sensor layer side. As shown in Figure 9, the detection device 100A of Embodiment 2 differs from Embodiment 1 in that it is provided with a protrusion detection electrode 121 instead of an aperture detection electrode 21. 【0051】 As shown in Figure 9, a base projection 17 is formed on the first surface 16 of the array substrate 10, projecting in the first stacking direction Z1. The base projection 17 is positioned in an area that overlaps with the projection detection electrode 121. Therefore, the portion of the projection detection electrode 121 that is stacked on the base projection 17 becomes a projection 127 that protrudes toward the sensor layer 70. The portion of the projection detection electrode 121 that is stacked on the first surface 16 rather than the base projection 17 is referred to as the bottom portion 128. 【0052】 The base protrusion 17 is conical in shape. Therefore, the protrusion 127 is also conical in shape. Furthermore, as shown in Figure 10, the protrusion 127 is circular in shape when viewed from above. 【0053】 As shown in Figure 10, the multiple protrusion detection electrodes 121 include those with a different number of protrusions 127. Specifically, the types of protrusion detection electrodes 121 include a first protrusion detection electrode 122 having four protrusions 127, a second protrusion detection electrode 123 having five protrusions 127, and a third protrusion detection electrode 124 having nine protrusions 127. 【0054】 Next, we will explain the case where pressure is applied to the individual detection region 5 where the protrusion detection electrode 121 is located. As a representative example of the protrusion detection electrode 121, we will use the second protrusion detection electrode 123 as an example. 【0055】 Figure 11 is a cross-sectional view of the detection device of Embodiment 2 in which pressure is applied to individual detection regions where protruding detection electrodes are arranged. As shown in Figure 11, when pressure F2 is applied to the detection surface 1, the protective layer 80 and the sensor layer 70 deform in the second stacking direction Z2. The contact surface 71 of the sensor layer 70 then contacts the top of the protrusion 127 (the end in the first stacking direction Z1). As a result, current flows from the common electrode 30 (not shown in Figure 11) to the second protruding detection electrode 123 via the sensor layer 70 (see A3 in Figure 11). 【0056】 As the pressure applied to the detection surface 1 increases, the sensor layer 70 moves further in the second stacking direction Z2 and makes contact with the middle portion of the protrusion 127 in the stacking direction (see dashed line K1 in Figure 11). Furthermore, as the applied pressure increases even more, the sensor layer 70 makes contact with the entire protrusion 127 and the entire bottom portion 126, that is, the entire second protrusion detection electrode 123 (see dashed line K2 in Figure 11). 【0057】 Thus, with respect to the protrusion detection electrode 121, when the sensor layer 70 moves in the second stacking direction Z2, it first contacts the protrusion 127. For this reason, the sensor layer 70 is less likely to come into contact with the bottom 128. For this reason, when the same amount of pressure is applied, the contact area with the sensor layer 70 is smaller with the protrusion detection electrode 121 than with the flat plate detection electrode 25. 【0058】 From the above, in this embodiment 2, when the same amount of pressure is applied, the contact area between the detection electrode 20 and the sensor layer 70 decreases in the order of the flat plate detection electrode 25, the third protruding detection electrode 124, the second protruding detection electrode 123, and the first protruding detection electrode 122. Next, the pressure sensitivity range of each detection electrode 20 will be explained. 【0059】 Figure 12 is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing through the detection electrode in the detection device of Embodiment 2. As shown in Figure 12, in the flat plate detection electrode 25 of Embodiment 2, the contact area with the sensor layer 70 reaches a threshold when the pressure value is C1. Therefore, the pressure sensitivity range (the magnitude of detectable pressure) of the individual detection region 5 where the flat plate detection electrode 25 is located is in the range from a pressure of 0 (zero) to C1. 【0060】 The third protruding detection electrode 124 has a protrusion 127 formed on it, and even when the pressure value is C1, the contact area with the sensor layer 70 does not reach the threshold. Therefore, in the individual detection region 5 where the third protruding detection electrode 124 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is C2, which is greater than C1. From the above, the pressure sensitivity range of the individual detection region 5 where the third protruding detection electrode 124 is located is from a pressure of 0 (zero) to C2. 【0061】 Since the second protrusion detection electrode 123 has fewer protrusions 127 than the third protrusion detection electrode 124, the contact area does not reach the threshold even when the pressure value is C2. Therefore, in the individual detection region 5 where the second protrusion detection electrode 123 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is C3, which is greater than C2. From the above, the pressure sensitivity range of the individual detection region 5 where the second aperture detection electrode 23 is located is from a pressure of 0 (zero) to C3. 【0062】 Since the first protrusion detection electrode 122 has fewer protrusions 127 than the second protrusion detection electrode 123, the contact area does not reach the threshold even when the pressure value is C3. Therefore, in the individual detection region 5 where the first protrusion detection electrode 122 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is C4, which is greater than C3. From the above, the pressure sensitivity range of the individual detection region 5 where the third aperture detection electrode 24 is located is from a pressure of 0 (zero) to C4. 【0063】 From the above, in the detection device 100A of Embodiment 1, the pressure sensitivity range of each individual detection region 5 where the flat plate detection electrode 25, the first protrusion detection electrode 122, the second protrusion detection electrode 123, and the third protrusion detection electrode 124 are arranged is different. Furthermore, the pressure sensitivity range increases in the order of the flat plate detection electrode 25, the third protrusion detection electrode 124, the second protrusion detection electrode 123, and the first protrusion detection electrode 122. 【0064】 Furthermore, the protruding detection electrode 121 of Embodiment 2 has the same installation area as the flat plate detection electrode 25 when viewed from above (see Figure 10). Therefore, the maximum current flowing through each detection electrode 20 (see E on the vertical axis in Figure 12) is the same for the flat plate detection electrode 25 and the protruding detection electrode 121. 【0065】 Embodiment 2 has been described above. In Embodiment 2, the protrusion 127 is a frustum (frustum of a cone), but in this disclosure it may also be a column (including cylinders and rectangular prisms), and there are no particular restrictions on the shape of the protrusion 127. Also, in Embodiment 2 the protrusion 127 is circular in plan view, but in this disclosure there are no particular restrictions on the shape of the protrusion when viewed from a plan view. In Embodiment 2, one of the four detection electrodes 20 is a flat plate detection electrode 25, but in this disclosure all four detection electrodes 20 may be protrusion detection electrodes 121. Also, the opening 27 may be long in the planar direction and be a groove. Also, the protrusion 127 may be long in the planar direction and be a ridge. Also, in this embodiment there are three types of protrusion detection electrodes 121 with different numbers of protrusions 127, but in this disclosure there may be two or more types. 【0066】 Furthermore, regarding the sensor layer 70, in the embodiment, a sensor layer formed from a conductive resin material was given as an example, but the present disclosure may also provide a sensor layer having a deformable insulating body made of silicone rubber or the like, and conductive fine particles dispersed inside the body. When no pressure is applied to such a sensor layer, the resistance value is high. On the other hand, when pressure is applied to the sensor layer and the body deforms, the conductive particles come into contact with or near each other, and the resistance value of the sensor layer decreases. However, in the present disclosure, the material of the sensor layer is limited to a material that can be printed on the first surface. [Explanation of Symbols] 【0067】 1 Detection surface 2 Back side 3. Detection area 4. Peripheral area 5 Individual detection area 10 Array substrates 11 Base material 12 array layers 16 Page 1 17. Raised areas of the base surface 20 detection electrodes 21 Aperture detection electrode 22 First aperture detection electrode 23. Second aperture detection electrode 24. Third aperture detection electrode 25 Flat plate detection electrode 27 Opening 30 common electrode 70 Sensor Layers 80 protective layer 100, 100A detection device 121 Protrusion detection electrode 122 First protrusion detection electrode 123 Second protrusion detection electrode 124 Third protrusion detection electrode 127 Convex part 128 Bottom

Claims

[Claim 1] It has an array substrate and a sensor layer stacked in order, The aforementioned array substrate is The first surface facing the sensor layer, A plurality of detection electrodes are provided on the first surface and are separated from the sensor layer, It has, The multiple detection electrodes include multiple aperture detection electrodes, each having an opening on which the first surface is exposed. The plurality of aperture detection electrodes include two or more types of aperture detection electrodes with different numbers of openings. Detection device. [Claim 2] Multiple detection electrodes include flat plate detection electrodes that do not have the aforementioned openings. The detection device according to claim 1. [Claim 3] It has an array substrate and a sensor layer stacked in order, The aforementioned array substrate is The first surface facing the sensor layer, A plurality of detection electrodes are provided on the first surface and are separated from the sensor layer, It has, The multiple detection electrodes include multiple protruding detection electrodes, each having a protrusion that extends toward the sensor layer. The multiple protrusion detection electrodes include two or more types of protrusion detection electrodes with different numbers of protrusions. Detection device. [Claim 4] Multiple detection electrodes include flat plate detection electrodes that do not have the aforementioned protrusions. The detection device according to claim 3.

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