Non-contact low substrate temperature measurement method
Infrared edge imaging with a factory interface and blackbody elements addresses the challenge of low-temperature measurement in semiconductor processing, ensuring accurate and contamination-free temperature control.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2026-02-09
- Publication Date
- 2026-06-16
AI Technical Summary
Existing infrared imaging techniques struggle to accurately measure substrate temperatures below 400°C due to substrate transparency, especially for blank substrates, and existing contact methods face challenges with large substrates and contamination concerns.
Measuring substrate temperature by imaging the edge rather than the top surface using infrared cameras, employing a factory interface with robots and controllers to position substrates for edge imaging, and using reflective blackbody elements for accurate temperature determination.
Enables accurate temperature measurement below 400°C, independent of substrate type, with improved accuracy and reduced contamination risk, facilitating reliable process control in semiconductor manufacturing.
Smart Images
Figure 2026097825000001_ABST
Abstract
Description
Technical Field
[0001]
[0001] Embodiments of the present disclosure generally relate to semiconductor device manufacturing, and more specifically, to an apparatus and method for measuring the temperature of a substrate using one or more infrared (IR) cameras.
Background Art
[0002]
[0002] Ultra-large scale integration (ULSI) circuits are formed on a semiconductor substrate such as a silicon (Si) substrate and may include more than one million electronic devices (e.g., transistors) that cooperate to perform various functions within the device. During processing, many heat treatment steps may be performed on the substrate surface. In heat treatment, accurate substrate temperature measurement is usually performed for process control. If the substrate temperature control is not accurate, the process result may deteriorate, which may affect the performance of the device and / or damage the substrate film material.
[0003]
[0003] To measure the temperature of a substrate during heat treatment, various types of temperature measurement tools may be used. For example, thermocouples are often used to measure the substrate temperature by physically contacting the substrate at a predetermined position on the substrate surface. However, for a substrate with a large diameter, since the distance between measurement positions becomes large, it is difficult to determine the temperature change across the entire substrate surface. Furthermore, it is difficult to control the reliability of the thermal physical contact of the thermocouple with the substrate surface, and there is also a concern about contamination.
[0004]
[0004] Using optical temperature measurement techniques, the temperature of a substrate during processing can be monitored in real time. One technique for monitoring temperature is to measure the infrared (IR) energy radiated from the surface of a heated substrate and convert this measured energy into a temperature measurement value.
[0005]
[0005] Scanning monochromators and lock-in amplifiers have been used to measure the IR energy reflected from a substrate. The reflected IR energy spectrum changes with the substrate temperature, so the substrate temperature can be determined from this measurement. A series of filters are rotated within the monochromator to allow the monochromator to accurately scan the reflection wavelength range. This apparatus is large, expensive, and time-consuming.
[0006]
[0006] Furthermore, the material used to form the substrate, such as crystalline silicon, may be transparent to IR wavelengths over the range of substrate temperatures for which temperature measurement is desired. Therefore, if a photodetector is positioned on the substrate to measure reflected IR energy, the IR energy directed towards the substrate passes through the detector instead of being reflected towards it, negatively affecting the accuracy of the measurement. Infrared (IR) cameras have also been used to measure the temperature of the substrate, oriented to view the top or bottom of the substrate. Blank substrates are transparent to IR wavelengths at temperatures below 400°C. No non-contact measurement technique is known that can measure substrate temperatures below 400°C for any type of substrate, especially blank substrates.
[0007]
[0007] Therefore, improved methods and apparatus for measuring the low temperature of substrates are needed. [Overview of the project]
[0008]
[0008] In one embodiment, a method for measuring the temperature of a substrate located in a semiconductor processing environment is disclosed. The substrate has a top surface and an edge surface and is placed at a predetermined location in the semiconductor processing environment. An infrared camera oriented to view one side of the edge surface of the substrate is triggered in order to obtain an infrared image of one side of the edge surface of the substrate. The infrared image is processed in order to obtain a temperature profile of the substrate.
[0009]
[0009] In one embodiment, a factory interface configured to measure the temperature of a substrate is disclosed. The factory interface includes a body. The factory interface further includes a robot positioned on the body and having an end effector for transporting a substrate between one or more load lock chambers and the factory interface. The factory interface robot is configured to position the substrate at a predetermined location on the factory interface. An infrared camera is positioned on the factory interface and radially aligned with the predetermined location. The factory interface further includes a controller configured to trigger the infrared camera to view one side of the edge surface of the substrate in order to obtain a first infrared image of the substrate. Data from the first infrared image is processed to determine the absolute temperature profile of the substrate.
[0010]
[0010] In one embodiment, a factory interface configured to measure the temperature of a substrate is disclosed. The factory interface includes a body. The factory interface further includes a robot positioned on the body and having an end effector for transporting a substrate through the factory interface. The factory interface robot is configured to position the substrate in a predetermined location on the factory interface. The factory interface robot is further configured to position the substrate so that its top surface is in the field of view of an infrared camera positioned close to the edge of the substrate and radially aligned with the substrate. The factory interface robot is further configured to position a reflective blackbody element beneath the bottom surface of the substrate. The blackbody element is obscured by the substrate. The factory interface further includes a controller configured to trigger an infrared camera to obtain an image of the top surface of the substrate, including the blackbody element, which the infrared camera can see through the substrate. The controller is further configured to analyze the image to determine the temperature of the substrate based on the amount of infrared light reflected from the blackbody element and visible through the substrate.
[0011]
[0011] In order to understand the features of the present disclosure described above in detail, the present disclosure summarized above will be described more specifically with reference to embodiments illustrated in part in the accompanying drawings. However, it should be noted that the accompanying drawings merely illustrate typical embodiments of the present disclosure and should not be considered to limit the scope of the present disclosure, and that the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]
[0012] [Figure 1] This figure shows an integrated platform configured to use a single infrared camera to capture the absolute temperature profile of the substrate edge. [Figure 2] This figure shows a factory interface according to another embodiment. [Figure 3] This figure shows a factory interface according to another embodiment. [Figure 4] This figure shows a factory interface according to another embodiment. [Figure 5] Figures A and B show examples of a first and second temperature profile for identifying that the substrate is tilted. [Figure 6] Figures A and B show embodiments of the factory interface of the integrated platform in Figure 1, configured to measure the temperature of the substrate using a known heat source. [Figure 7A] This figure shows a blackbody element for a robot end effector according to one embodiment of the present disclosure. [Figure 7B-C] This figure shows a blackbody element coupled to the end effector of a robot. [Figure 8] This flowchart illustrates a method for measuring the temperature of a substrate located at the factory interface of a semiconductor processing environment, and corresponds to Figure 1. [Figure 9] This flowchart illustrates a method for measuring the temperature of a substrate located at the factory interface of a semiconductor processing environment, and corresponds to Figure 2. [Figure 10] This flowchart illustrates a method for measuring the temperature of a substrate located at the factory interface of a semiconductor processing environment, and corresponds to Figure 3. [Figure 11] This flowchart illustrates a method for measuring the temperature of a substrate located at the factory interface of a semiconductor processing environment, and corresponds to Figure 4. [Figure 12] This flowchart illustrates a method for determining whether a substrate is tilted or not in a factory interface for a semiconductor processing environment, and corresponds to Figure 5. [Figure 13] This flowchart illustrates a method for determining the type of substrate in a semiconductor processing environment, and corresponds to Figures 6A and 6B. [Figure 14] This flowchart illustrates a method for measuring the temperature of a substrate located at the factory interface of a semiconductor processing environment, and corresponds to Figures 7A to 7C.
[0013]
[0027] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings whenever possible. Elements disclosed in one embodiment are considered to be usefully applicable to other embodiments without specific detail thereto. [Modes for carrying out the invention]
[0014]
[0028] Low temperature measurement of a substrate below about 400 °C is problematic with existing infrared imaging techniques that image the top surface of the substrate. Below 400 °C, the substrate appears transparent. In particular, low temperature measurement is required during the annealing process of semiconductor substrate manufacturing. In the following disclosure, an improved technique for measuring the low temperature of a substrate using one or more infrared cameras that image the edge of the substrate will be described. By measuring the temperature of the edge of the substrate rather than the top surface of the substrate, a greater effective distance or thickness of the measured substrate that is not transparent to the infrared camera is obtained. Measuring the edge temperature of the substrate is effective for any type of substrate, such as a bare, doped substrate, or a substrate on which a circuit is fabricated. Measuring the low temperature at the end of the annealing process makes it possible to measure a temperature below the oxidation temperature of the substrate.
[0015]
[0029] FIG. 1 is a diagram showing an integrated platform 100 configured to use one infrared camera to capture the absolute temperature profile of the edge of a substrate 106 according to one or more embodiments. For example, the integrated platform 100 can fabricate semiconductor devices by depositing or etching one or more metal layers, semiconductor layers, and / or organic materials on the substrate 106. Examples of integrated platforms that include multiple processing chambers include those commercially available from Applied Materials, Inc. of Santa Clara, California. Alternatively, other substrate processing platforms may be modified according to the present disclosure.
[0016]
[0030] The integrated platform 100 may include a vacuum-tight processing platform 160, a factory interface 162, and a controller 150. Further, the integrated platform 100 may also be referred to as a cluster tool or a multi-chamber processing system.
[0017]
[0031] The processing platform 160 includes one or more process chambers. For example, the processing platform 160 may include process chambers 112, 114, 116, 118, 132, 134, 138, 136, and 140. Further, the processing platform 160 includes one or more transfer chambers. For example, as shown in FIG. 1, the processing platform 160 includes transfer chambers 110 and 130. The processing platform 160 may also include one or more pass-through chambers that enable the substrate 106 to be transferred between the transfer chambers 110 and 130. For example, the pass-through chambers 122 and 124 enable the substrate 106 to be transferred between the transfer chambers 110 and 130.
[0018]
[0032] The processing platform 160 may also include one or more load lock chambers. For example, as shown in FIG. 1, the processing platform 160 includes load lock chambers 102 and 104. The load lock chambers 102 and 104 can be pumped down to operate under vacuum before transferring the substrate 106 from the factory interface 162 and the transfer chamber 110.
[0019]
[0033] The factory interface 162 includes a main body 183, one or more factory interface robots 185, and an interface for engaging one or more forward-opening unified pods (FOUPS) 187A-187D. The factory interface robot 185 is capable of linear and rotational motion to facilitate the transfer of the substrate 106, as indicated by arrow 182. Furthermore, the factory interface robot 185 transfers the substrate 106, which is stationary on the robot's end effector 188, between the FOUPS 187A-D and the load lock chambers 102, 104. The substrate 106 can be transferred from the load lock chambers 102, 104 and then transferred by the factory interface robot 185 to one of the FOUPS 187A-D. As soon as the substrate 106 exits one or both of the load lock chambers 102, 104, the factory interface robot 185 may be configured to place the substrate 106 on a substrate support (not shown) or to hold the substrate 106 in one or more predetermined positions within the factory interface 162 (e.g., end effector 188). At the predetermined position, the substrate 106 is imaged according to one or more embodiments described herein. The substrate 106 is then transferred by the factory interface robot 185 from the substrate support / predetermined position to one or more of the load lock chambers 102, 104, or to FOUPS 187A-D.
[0020]
[0034] The transfer chamber 110 includes a transfer robot 111. The transfer robot 111 transfers the substrate 106 to and from the load lock chambers 102 and 104, to and from the process chambers 112, 114, 116, and 118, and to and from the pass-through chambers 122 and 124. The pass-through chambers 122 and 124 may be used to maintain vacuum conditions while allowing the substrate 106 to be transferred between the transfer chambers 110 and 130 within the integrated platform 100. The transfer robot 131 transfers the substrate 106 between the pass-through chambers 122 and 124 and the process chambers 132, 134, 136, 138, and 140, and between the process chambers 132, 134, 136, 138, and 140.
[0021]
[0035] Process chambers 112, 114, 116, 118, 132, 134, 138, 136, and 140 are configured in any way suitable for processing the substrate 106. For example, process chambers 112, 114, 116, 118, 132, 134, 138, 136, and 140 may be configured to deposit one or more metal layers, one or more semiconductor layers, one or more organic films on the substrate 106 and to apply one or more cleaning processes in order to fabricate semiconductor devices such as photodetectors. Process chambers 112, 114, 116, 118, 132, 134, 138, 136, and 140 may be configured additionally or alternatively for etching, annealing, curing, gas release, measurement, or other processes.
[0022]
[0036] One or more of the first process chambers, for example process chambers 116, 118, are configured to perform a pre-cleaning process to remove contaminants and / or degas volatile gases from the substrate 106 before transferring it to another process chamber. Process chambers 114 and 112 may be configured to deposit one or more metal layers on the substrate 106. Process chamber 138 may be configured to deposit one or more layers of semiconductor material on the substrate 106. Process chambers 116, 118, 132, 134, 138, 136, and 140 may be configured to deposit material (e.g., metal layers or organic films) using chemical deposition processes such as chemical vapor deposition (CVD), atomic layer deposition (ALD), metal-organic chemical vapor deposition (MOCVD), plasma chemical vapor deposition (PECVD), and physical vapor deposition (PVD).
[0023]
[0037] Controller 150 is configured to control components of the integrated platform 100. Controller 150 may be any suitable controller for controlling one or more processes among the process chamber, transfer chamber, pass-through chamber, and factory interface. For example, Controller 150 may be configured to control the operation of the transfer robot 111 and / or transfer robot 131, and optionally the factory interface robot 185. Controller 150 includes a central processing unit (CPU) 152, memory 154, and support circuits 156. CPU 152 may be any general-purpose computer processor that can be used in an industrial environment. Support circuits 156 are coupled to CPU 152 and may include a cache, clock circuit, input / output subsystem, power supply, etc. Software routines may be stored in memory 154. Software routines may be executed by CPU 152. Alternatively or additionally, one or more software routines may be executed by a second CPU (not shown). The second CPU may be part of Controller 150 or remote from Controller 150.
[0024]
[0038] One or more infrared (IR) cameras 166, one or more camera triggers 168, and / or a factory interface 162 may have a dedicated controller 164 or a controller integrated with or with controller 150. Controller 164 is configured to control the measurement of the temperature of a substrate 106 located in a semiconductor processing environment (e.g., an integrated platform 100). In one embodiment, controller 164 is configured to instruct a factory interface robot 185 to retrieve the substrate 106 from one of the load lock chambers 102, 104 and place the substrate 106 on a substrate support 190 located in the factory interface 162. The factory interface robot 185 can move the substrate 106 held on the robot's end effector 188 to place the substrate 106, which has a top surface and edge surfaces, at one or more predetermined locations in the semiconductor processing environment (for example, placed on the substrate support 190, or the substrate 106 is held directly on the robot's end effector 188 as it is away from and close to one of the load lock chambers 102, 104).
[0025]
[0039] Trigger(s) 168 is configured to trigger one or more infrared cameras 166 oriented to view one side of the edge surface of the substrate 106 along the radial axis of the substrate 106 in order to obtain an infrared image of one side of the edge surface of the substrate 106. One or more infrared cameras 166 may be positioned close to the edge of the substrate support 190 and radially aligned with the substrate support 190. Trigger(s) 168 may be a hardware trigger, such as a proximity sensor, or a software trigger. Trigger(s) 168 may be triggered in response to the substrate 106 being removed from one of the load lock chambers 102, 104 by the factory interface robot 185. Controller 164 is configured to process the infrared images in order to obtain an absolute temperature profile or a relative temperature profile of the substrate 106. When determining the (absolute) temperature profile of the substrate 106, the profile is independent of the type of substrate (e.g., bare substrate, doped substrate, substrate with semiconductor devices fabricated on it, etc.). Since the infrared camera 166 captures a side view (e.g., profile) of the substrate 106, a detectable infrared image for processing can be obtained even if the substrate 106 has a temperature of approximately 400°C or lower.
[0026]
[0040] Figure 2 shows another embodiment of the factory interface 262, with load lock chambers 102 and 104 illustrated for reference. The factory interface 262 is configured to use two infrared cameras 166 to capture the absolute temperature profile of the edges of the substrate 106. The factory interface 262 may be used in the integrated platform 100 of Figure 1.
[0027]
[0041] The factory interface 262 includes a controller 164 (or one coupled thereto), infrared cameras 166a, 166b, triggers 168, and a factory interface robot 185. The factory interface robot 185 has an end effector 188 for holding the substrate 106 or for positioning the substrate 106 within the field of view of the infrared cameras 166a, 166b on the substrate support 190. The factory interface 162 individually holds one or more substrates 106 on the end effector 188 or on the substrate support 190 (e.g., a cool-down station) of the factory interface 162. The substrate 106, having a top surface and edge surfaces, is positioned in a predetermined location (e.g., on the substrate support 190) by the factory interface robot 185. When a trigger event occurs, trigger(s) 168 is configured to trigger a first infrared camera 166a oriented to view one side of the edge surface of substrate 106 along the radial axis of substrate 106 in order to obtain a first infrared image of one side of the edge surface of substrate 106. Trigger(s) 168 is configured to trigger a second infrared camera 166b oriented to view a second side of the edge surface of substrate 106 that is not included in (or is only partially included in) the first infrared image, along the radial axis of substrate 106, in order to obtain a second infrared image of a second side of the edge surface of substrate 106. Controller 164 is configured to process data from the first and second infrared images in order to obtain an absolute temperature profile of substrate 106. When determining the (absolute) temperature profile of substrate 106, the profile is independent of the type of substrate 106 (e.g., bare substrate, doped substrate, substrate with semiconductor devices manufactured thereon, etc.).
[0028]
[0042] In Figure 1, the substrate 106 is placed on the substrate support 190 during image acquisition, but the substrate support 190 can be omitted. In such an example, the substrate 106 may remain on the end effector 188 during image acquisition.
[0029]
[0043] Figure 3 shows another embodiment of the factory interface 362 configured to use four infrared cameras 166a, 166b, 170a, and 170d to capture absolute temperature profiles of the edges and top of the substrate 106. The factory interface 362 may also be used in the integrated platform 100, and load lock chambers 102 and 104 are shown for reference.
[0030]
[0044] The factory interface 362 is coupled to a controller 164 and includes infrared cameras 166a, 166b, 170a, and 170b, one or more triggers 168a, 168b (two shown), and a factory interface robot 185. The factory interface robot 185 has an end effector 188 for positioning the substrate 106 within the field of view of each infrared camera 166a, 170a or 166b, 170b of the substrate support 190. Note that the factory interface 362 includes two substrate supports 190, each having its own trigger 168 and infrared camera 166a, 166b (or 166c, 166d). However, it is conceivable that the factory interface 362 may also include only a single substrate 106, each having its own trigger 168 and camera 166a, 170a. In an example including only a single substrate support 190, the substrate support 190 may be located in the center of the factory interface. In another embodiment, instead of the substrate 106 being placed on the substrate support 190, the substrate 106 may be held directly on the robot's end effector 188 as the substrate 106.
[0031]
[0045] Trigger 168a is configured to trigger a first infrared camera 166a oriented to view one side of the edge surface of the first substrate 106 along the radial axis of the substrate 106. The first infrared camera 166a obtains a first infrared image of one side of the edge surface of the first substrate 106. Trigger 168a is also configured to trigger a second infrared camera 170a (simultaneously with or sequentially with the first infrared camera 166a). Camera 170a is oriented to view the top surface of the first substrate 106a perpendicular to the radial axis of the first substrate 106 in order to obtain a second infrared image of the top surface of the first substrate 106. For clarity, the illustrated infrared camera 170a is laterally offset from the substrate 106. However, it should be understood that, for ease of image acquisition, the infrared camera 170a may be positioned perpendicular to the substrate 106 without any lateral offset.
[0032]
[0046] Similarly, the second substrate 106 is positioned on the second substrate support 190 opposite the factory interface 362. The third infrared camera 166b (similar to the first infrared camera 166a) and the fourth infrared camera 170b (similar to the second infrared camera 170a) capture images of the top and sides of the second substrate 106b, respectively, in response to a signal from the trigger 168b.
[0033]
[0047] In Figure 3, the substrate 106 is placed on the substrate support 190 during image acquisition, but the substrate support 190 can be omitted. In such an example, the substrate 106 may remain on the end effector 188 during image acquisition.
[0034]
[0048] As shown in Figure 3, each load lock chamber 102, 104 is associated with its respective substrate support 190, trigger sensor 168a or 168b, and infrared camera 166a, 170a or 166b, 170b, thereby improving throughput.
[0035]
[0049] Figure 4 shows another embodiment of the factory interface 462. The factory interface 462 may be used in the integrated platform 100. The load lock chambers 102 and 104 in Figure 1 are shown for reference.
[0036]
[0050] Factory interface 462 is similar to factory interface 362, but the infrared cameras 170a and 170b are omitted. In this configuration, the acquisition of planar images (e.g., top-down images) is omitted, and the temperature of the substrate 106 is determined based only on acquired side (e.g., profile) images.
[0037]
[0051] In one embodiment, the integrated platform 100 in Figure 1 may be used to use one infrared camera 166 to determine if the substrate 106 is tilted. The substrate is considered tilted if the top surface of the substrate 106 is not parallel to a reference plane in the system, such as the substrate support surface. In another example, the top surface of the substrate 106 may be non-parallel to the bottom surface of the substrate 106 due to uneven deposition (or other processing) on the top surface of the substrate 106. The tilt may result from uneven processing at multiple locations on the integrated platform 100, including but not limited to one or more of the process chambers 112, 114, 116, 118, 132, 134, 138, 136, and 140.
[0038]
[0052] When determining whether a substrate is tilted, the substrate may be placed on a substrate support 190. In another embodiment, instead of the substrate 106 being placed on the substrate support 190, the substrate 106 may remain directly held by the robot's end effector 188 as it approaches and moves away from one of the load lock chambers 102, 104. In such an example, triggers 168a, 168b are configured to trigger the respective infrared cameras 166a, 166b to obtain a first infrared image of the top surface of the substrate 106. The controller 164 is configured to process the first infrared image to obtain a first temperature profile. The controller 164 compares the first temperature profile to temperature profiles stored in memory 154 of substrates known to be non-tilted in order to identify that the substrate 106 is tilted based on one or more differences between the profiles. In an embodiment, the substrate 106 is identified as tilted when the controller 164 detects a difference in edge temperature and a shift in the hot position of the top center relative to a known non-tilted substrate.
[0039]
[0053] Although not shown in the diagram, it is conceivable that the temperature of the substrate 106 may be determined in addition to the tilt determination. In such an example, one or more additional infrared cameras may be placed in the factory interface 462 to capture a profile image of the substrate 106.
[0040]
[0054] Figure 5A shows an example of stored temperature profiles 500a and a second temperature profile 500b associated with the substrate 106 for identifying that the substrate 106 is tilted. The controller 164 (through the execution of a software program on it) identifies the location 502a of the substrate with the highest temperature in stored temperature profile 500a, which corresponds to an untilted profile. In an untilted orientation, the center is generally hotter than other locations on the top surface of the substrate 106 that are known not to be tilted (location 502a). The controller 164 identifies the temperature at the edge 504a of the substrate that are known not to be tilted.
[0041]
[0055] When an image of the substrate 106 is captured at the factory interface to generate a second temperature profile 500b, the controller 164 identifies the locations of hotspots 502b and edges 504b of the substrate 106 in the second temperature profile 500b. Next, the first temperature profile 500a is compared with the second temperature profile 500b. The difference (or absence thereof) between the first temperature profile 500a and the second temperature profile 500b indicates whether the substrate at the factory interface is tilted or not. The controller 164 determines that the substrate 106 is tilted by detecting a difference in edge temperatures (between 504a and 504b) that exceeds a threshold, and / or a shift from the location of the maximum temperature (502a) to an off-center location.
[0042]
[0056] Figures 6A-6B show one embodiment of a factory interface 662 for use with the integrated platform 100 of Figure 1. The factory interface 662 is configured to measure the temperature of the substrate 106 using a heating element 630. The factory interface 662 is similar to the factory interface 162 and can be used in place of the factory interface 162. The factory interface 662 may also include one or more hardware components of the factory interface 162, which may not be shown in Figures 6A-6B for clarity.
[0043]
[0057] In the factory interface 662, the substrate 106 is positioned adjacent to and / or straddling the heating element 606. The substrate 106 is positioned between the infrared camera 170a and the heating element 630. The first portion 604a of the preheating element 630 is directly within the field of view of the infrared camera 170a (not overlapping the substrate 106), and the second portion 604b of the preheating element 630 overlaps the substrate 106. The trigger 168 is configured to trigger the infrared camera 170a to obtain an image of the top surface of the substrate 106, including the first portion 604a which the infrared camera 170a can see directly and the second portion 604b which the infrared camera 170a can see through the substrate 106. The controller 164 is configured to process the infrared image to determine the difference between a first temperature of the first portion 604a and a second temperature of the second portion 604b. The controller 164 is further configured to identify the type of substrate 106 based on that difference. (For example, bare substrates, doped substrates, substrates with semiconductor devices manufactured on them, etc.)
[0044]
[0058] Figure 7A shows a blackbody element for a robot end effector according to one embodiment of the present disclosure. Figures 7B and 7C show blackbody elements coupled to a robot end effector.
[0045]
[0059] Figure 7A shows one embodiment of the components of a reflective blackbody element 742. The blackbody element 742 includes a blackbody film disk 746 and an annular film holder 744 that are axially aligned and coupled together. The annular film holder 744 includes a central opening formed to penetrate axially and is made of polyetheretherketone (PEEK). However, other materials are also possible.
[0046]
[0060] Figures 7B and 7C show a blackbody element 742 coupled to the robot's end effector 788. In Figure 7B, the blackbody element 742 is positioned in the center between opposing inclined surfaces 770 on the upper surface of the robot's end effector 788 (e.g., the factory interface robot 185). In Figure 7C, the blackbody element 742 is offset between opposing inclined surfaces 770 on the upper surface of the robot's end effector 788. The opposing inclined surfaces 770 are raised at the rear edge of the robot's end effector 788 so that when the substrate 106 is placed on it, the substrate 106 is positioned at a distance from the blackbody element 742. In such an example, the substrate 106 is positioned perpendicularly on top of the blackbody element 742 so that the substrate 106 is between the blackbody element 742 and the infrared camera 170a.
[0047]
[0061] During the process, the controller 164 (shown in Figure 1) triggers the infrared camera 170a to obtain an image of the top surface of the substrate 106, including the blackbody element 742 that the infrared camera 170a can see through the substrate 106. The controller 164 is further configured to analyze the image to determine the temperature of the substrate 106 based on the amount of infrared light emitted from the blackbody element 702 and visible through the substrate 106. Such a correlation between temperature and emitted radiation can be determined experimentally. The controller 164 may determine the temperature of the substrate 106 by referring to a lookup table stored in the controller 164's memory 154.
[0048]
[0062] Figure 8 is a flowchart showing a method 800 for measuring the temperature of a substrate 106 located at a factory interface 162 of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figure 1. In step 802, a substrate 106 having a top surface and an edge surface is placed at a predetermined location in the semiconductor processing environment. In step 804, an infrared camera 166 having an orientation configured to view one side of the edge surface of the substrate 106 is triggered in order to obtain an infrared image of one side of the edge surface of the substrate 106. In one example, the infrared camera 166 is coplanar with the substrate 106. In step 806, data from the infrared image is processed in order to obtain a temperature profile of the substrate 106. In the embodiment, the temperature profile is an absolute temperature profile. The absolute temperature profile of the substrate 106 is independent of the type of substrate 106 (e.g., bare substrate, doped substrate, substrate with semiconductor devices manufactured thereon, etc.).
[0049]
[0063] In this embodiment, the infrared camera 166 is oriented to view the edge surface of the substrate 106 along the radial axis of the substrate 106. The correlation between the infrared intensity captured in the image and the temperature of the substrate is stored in the memory 154 of the controller 164 and can be accessed to obtain an absolute temperature profile. The correlation may be determined experimentally and stored in memory for use.
[0050]
[0064] Figure 9 is a flowchart showing a method 900 for measuring the temperature of a substrate 106 located at a factory interface 262 of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figure 2. In step 902, a substrate 106 having a top surface and an edge surface is placed at a predetermined location in the semiconductor processing environment. In step 904, a first infrared camera 166a, oriented to view one side of the edge surface of the substrate 106, is triggered to obtain a first infrared image of one side of the edge surface of the substrate 106. In step 906, a second infrared camera 166b, oriented to view the second side of the edge surface of the substrate 106 that is not included (or only partially included) in the first infrared image, is triggered to obtain a second infrared image of the second side of the edge surface of the substrate 106. In step 908, data from the first infrared image and data from the second infrared image are processed to obtain a temperature profile of the substrate 106. In the embodiment, the temperature profile is an absolute temperature profile. The absolute temperature profile of substrate 106 is independent of the type of substrate 106 (e.g., bare substrate, doped substrate, substrate with semiconductor devices manufactured thereon, etc.).
[0051]
[0065] Figure 10 is a flowchart showing a method 1000 for measuring the temperature of a substrate 106 located at a factory interface 362 of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figure 3. In step 1002, a first substrate 106a having a top surface and an edge surface is placed at a first predetermined location in the semiconductor processing environment. In step 1004, a first infrared camera 166 having an orientation configured to view one side of the edge surface of the first substrate 106 is triggered in order to obtain a first infrared image of one side of the edge surface of the first substrate 106. In step 1006, a second infrared camera 170a is triggered, which is placed close to the first predetermined location of the first substrate 106 and has an orientation configured to view the top surface of the first substrate 106 perpendicular to the radial axis of the first substrate 106, in order to obtain a second infrared image of the top surface of the first substrate 106. In step 1008, a second substrate 106 is placed at a second predetermined location in the semiconductor processing environment. In step 1010, a third infrared camera 166b is triggered, positioned close to a second predetermined location on the second substrate 106b and oriented to view the second side of the edge surface of the second substrate 106, in order to obtain a third infrared image of the second side of the edge surface of the second substrate 106. In step 1012, a fourth infrared camera 170b is triggered, positioned close to a second predetermined location on the second substrate 106 and oriented to view the upper surface of the second substrate 106b perpendicular to the radial axis of the second substrate 106, in order to obtain a fourth infrared image of the upper surface of the second substrate 106. In step 1014, data from the first, second, third, and fourth infrared images is processed to obtain temperature profiles of the first substrate 106 and the second substrate 106. In this embodiment, the temperature profile is an absolute temperature profile. The absolute temperature profile of substrate 106 is independent of the type of substrate 106 (e.g., bare substrate, doped substrate, substrate with semiconductor devices manufactured thereon, etc.). The obtained absolute temperature profile can be further processed to identify one or more locations on the upper surface of substrate 106 that exceed the oxidation temperature of substrate 106.
[0052]
[0066] Figure 11 is a flowchart showing a method 1100 for measuring the temperature of a substrate 106 located at a factory interface 462 of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figure 4. In step 1102, a first substrate 106 having a top surface and an edge surface is placed at a first predetermined location in the semiconductor processing environment. In step 1104, a first infrared camera 166a having an orientation configured to view one side of the edge surface of the first substrate 106 is triggered in order to obtain a first infrared image of one side of the edge surface of the first substrate 106. In step 1006, a second substrate 106 is placed at a second predetermined location in the semiconductor processing environment. In step 1108, a second infrared camera 166b having an orientation that is close to a second predetermined location of the second substrate 106 and views the second side of the edge surface of the second substrate 106 is triggered in order to obtain a second infrared image of the second side of the edge surface of the second substrate 106b. In step 1110, data from the first and second infrared images is processed to obtain the relative temperature profiles of the first and second substrates 106. The relative temperature profiles are independent of the type of substrate 106 (e.g., bare substrate, doped substrate, substrate with semiconductor devices manufactured thereon, etc.).
[0053]
[0067] Figure 12 is a flowchart showing a method 1200 for determining whether a substrate is tilted in a factory interface of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figure 5. In step 1202, a substrate 106b having a top surface and an edge surface is placed at a predetermined position in the semiconductor processing environment. In step 1204, an infrared camera 166 having an orientation configured to view one side of the top surface and edge surface of the substrate 106b is triggered in order to obtain a first infrared image of one side of the top surface and edge surface of the substrate 106b. In step 1206, the first infrared image is for obtaining a first temperature profile of the substrate 106b. In step 1208, the first temperature profile is compared with a second temperature profile of the substrate 106a, which is known not to be tilted and is stored in memory 154, in order to identify whether the first substrate 106a is tilted based on one or more differences between the profiles. In one embodiment, to identify that the first substrate 106a is tilted, the controller 164 detects a change in edge temperature and a shift of the high-temperature position at the center of the upper surface of substrate 106a to a second position on the upper surface of substrate 106b between temperature profiles.
[0054]
[0068] Figure 13 is a flowchart showing a method 1300 for determining the type of substrate in a semiconductor processing environment according to one or more embodiments, and corresponds to Figures 6A and 6B. In step 1302, the substrate 106 is positioned such that the top surface of the substrate 106 is in the field of view of the infrared camera 170a. In step 1304, a heating element 630 of a known temperature is positioned across the edge of the substrate 106. The substrate 106 is positioned between the infrared camera 170a and the heating element 630. A first portion 604a of the heating element 630 is directly in the field of view of the infrared camera 170a, while a second portion 604b of the heating element 630 is obscured by the substrate 106. In step 1306, the infrared camera 170a is triggered to obtain an image of the top surface of the substrate 106, including the first portion 604a which the infrared camera 170a can see directly and the second portion 604b which the infrared camera 170a can see through the substrate 106. In step 1308, an infrared image is processed to determine the difference between the first temperature of the first portion 604a and the second temperature of the second portion 604b. In step 1310, the type of substrate 106 is determined based on this difference (e.g., bare substrate, doped substrate, substrate with semiconductor devices fabricated thereon, etc.).
[0055]
[0069] Figure 14 is a flowchart showing a method 1400 for measuring the temperature of a substrate 106 located on an integrated platform 100 of a semiconductor processing environment, according to one or more embodiments, and corresponds to Figures 7A to 7C. In step 1402, the substrate 106 is positioned such that its top surface is in the field of view of an infrared camera 166. In step 1404, a reflective blackbody element 702 is positioned beneath the bottom surface of the substrate 106, with the blackbody element 702 obscured by the substrate 106. In step 1406, the infrared camera 166 is triggered to obtain an image of the top surface of the substrate 106, including the blackbody element 702, which can be seen through the substrate 106 by the infrared camera 166. In block 1408, the infrared image is processed to determine the temperature of the substrate 106 based on the amount of infrared light emitted from the blackbody element 702 and visible through the substrate 106.
[0056]
[0070] Embodiments of this disclosure further relate to one or more of the following sections.
[0057]
[0071] 1. A method for identifying the type of substrate located in a semiconductor processing environment, comprising: positioning the substrate such that its top surface is within the field of view of an infrared camera; positioning a preheated element to a known temperature next to the edge of the substrate, wherein the substrate is positioned between the infrared camera and the preheated element, with a first portion of the preheated element directly within the field of view of the infrared camera and a second portion of the preheated element obscured by the substrate; triggering the infrared camera to obtain an infrared image of the top surface of the substrate, including a first portion that the infrared camera can directly see and a second portion that the infrared camera can see through the substrate; processing data from the infrared image to determine the difference between a first temperature of the first portion and a second temperature of the second portion; and identifying the type of substrate based on this difference.
[0058]
[0072] 2. A method for determining whether a substrate is tilted, comprising: positioning the top surface of a first substrate in the field of view of an infrared camera; triggering the infrared camera to obtain a first infrared image of the top surface of the first substrate; processing data from the first infrared image to obtain a first temperature profile; and comparing the first temperature profile with a stored temperature profile of a second substrate known to be non-tilted, in order to identify whether the first substrate is tilted based on one or more differences between the profiles.
[0059]
[0073] 3. A method for determining whether a substrate is tilted, comprising: positioning the top surface of a first substrate in the field of view of an infrared camera; triggering the infrared camera to obtain a first infrared image of the top surface of the first substrate; processing data from the first infrared image to obtain a first temperature profile; and comparing the first temperature profile with a stored temperature profile of a second substrate known not to be tilted, in order to identify that the first substrate is tilted based on one or more differences between the profiles, wherein identifying that the first substrate is tilted includes detecting a change in edge temperature between the first substrate and the second substrate that exceeds a first threshold, and detecting a shift of a high-temperature location at the center of the top surface of the second substrate to a second location on the top surface of the second substrate that exceeds a second threshold.
[0060]
[0074] While embodiments have been described herein, those skilled in the art who are interested in this disclosure will likely understand that other embodiments that do not depart from the scope of the invention are conceivable. Therefore, the scope of this claim or any subsequent related claims should not be unduly limited by the description of embodiments herein.
Claims
1. A method for measuring the temperature of a substrate located in a semiconductor processing environment, The substrate having an upper surface and an edge surface is placed at a predetermined position within the semiconductor processing environment, To obtain an infrared image of one side of the edge surface of the substrate, an infrared camera oriented to view that one side of the edge surface of the substrate is triggered. To obtain the temperature profile of the substrate, the data from the infrared image is processed. A method that includes this.
2. The method according to claim 1, wherein the infrared camera is oriented to view the edge surface of the substrate along the radial axis of the substrate.
3. The infrared camera is a first infrared camera, the infrared image is a first infrared image, and the method further, To obtain a second infrared image of the second side of the edge surface of the substrate, a second infrared camera is triggered, which is oriented to view the second side of the edge surface of the substrate that is not included in the first infrared image. The method according to claim 1, including the method described in claim 1.
4. The method according to claim 3, wherein processing the infrared image includes processing data from the first infrared image and data from the second infrared image in order to obtain the temperature profile of the substrate.
5. The infrared camera is a first infrared camera, the infrared image is a first infrared image, the substrate is a first substrate, the second infrared camera is positioned in close proximity to a second predetermined position on the second substrate, and the method further comprises: To obtain a second infrared image of one side of the edge surface of the second substrate, the second infrared camera is oriented to view the one side of the edge surface of the second substrate. Processing the infrared image involves processing data from the first infrared image in order to obtain a first temperature profile of the first substrate, and processing data from the second infrared image in order to obtain a second temperature profile of the second substrate. The method according to claim 1, including the method described in claim 1.
6. The infrared camera is a first infrared camera, the infrared image is a first infrared image, the predetermined position is a first predetermined position, the substrate is a first substrate, and the method further... To obtain a second infrared image of the upper surface of the first substrate, a second infrared camera is triggered, which is positioned close to the first predetermined position on the first substrate and oriented to view the upper surface of the first substrate perpendicular to the radial axis of the first substrate. Placing a second substrate at a second predetermined location within the semiconductor manufacturing environment, To obtain a third infrared image of one side of the edge surface of the second substrate, a third infrared camera is triggered, which is positioned close to the second predetermined position on the second substrate and oriented to view the one side of the edge surface of the substrate. In order to obtain a fourth infrared image of the upper surface of the second substrate, a fourth infrared camera is triggered, which is positioned close to the second predetermined position on the second substrate and oriented to view the upper surface of the second substrate perpendicular to the radial axis of the second substrate. Includes, The method according to claim 1, wherein processing the infrared images includes processing data from the first, second, third, and fourth infrared images to obtain temperature profiles of the first and second substrates.
7. The method according to claim 6, further comprising performing a second processing on the data to identify one or more locations on the upper surface of the first substrate and / or the second substrate where the oxidation temperature of the first substrate and / or the second substrate is above.
8. The method according to claim 1, wherein the reflective blackbody element is placed below the bottom surface of the substrate.
9. The method according to claim 8, wherein data from the infrared image is processed to determine the temperature of the substrate based on the amount of infrared light reflected from the blackbody element and visible through the substrate.
10. The method according to claim 8, wherein the blackbody element includes a blackbody film disk and an annular film holder.
11. The method according to claim 10, wherein the infrared light reflected from the blackbody element and visible through the substrate is from the exposed portion of the blackbody film disk that is not obstructed by the annular film holder.
12. A factory interface configured to measure the temperature of a substrate, The main unit and A factory interface robot having an end effector disposed on the main body for transferring the substrate between one or more load lock chambers and a factory interface, and configured to position the substrate at a predetermined location on the factory interface, An infrared camera is positioned in the factory interface and radially aligned with the predetermined position, It is a controller, To obtain a first infrared image of the substrate, the infrared camera, which is oriented to view one side of the edge surface of the substrate, is triggered. To obtain the absolute temperature profile of the substrate, the data from the first infrared image is processed. A controller configured in such a way Equipped with a factory interface.
13. The factory interface according to claim 12, further comprising a trigger configured to trigger the infrared camera in response to the substrate entering the factory interface.
14. The factory interface according to claim 12, wherein the controller is configured to trigger the infrared camera in response to a signal from the proximity sensor.
15. The factory interface robot is located in the center of the factory interface, as described in claim 12.
16. The infrared camera is a first infrared camera, the infrared image is a first infrared image, and the controller further... To obtain a second infrared image of the second side of the edge surface of the substrate, a second infrared camera is triggered, which is oriented to view the second side of the edge surface of the substrate that is not included in the first infrared image. It is configured in such a way, Obtaining the absolute temperature profile of the substrate includes processing data from the first infrared image and processing data from the second infrared image, according to claim 12.
17. A factory interface configured to measure the temperature of a substrate, The main unit and A factory interface robot is provided on the main body and has an end effector for transporting the substrate through the factory interface, and is configured to position the substrate at a predetermined location on the factory interface, The substrate is placed at a predetermined position in the factory interface, The substrate is positioned such that its upper surface is within the field of view of an infrared camera that is positioned close to the edge of the substrate and radially aligned with the substrate. A reflective blackbody element is placed below the bottom surface of the aforementioned substrate. A factory interface robot is configured such that the blackbody element is covered by the substrate, It is a controller, In order to obtain an image of the upper surface of the substrate, including the blackbody element, which can be seen through the substrate by the infrared camera, the infrared camera is triggered, The image is analyzed to determine the temperature of the substrate based on the amount of infrared light reflected from the blackbody element and visible through the substrate. A controller configured in such a way Equipped with a factory interface.
18. The factory interface according to claim 17, wherein the blackbody element includes a blackbody film disk and an annular film holder.
19. The factory interface according to claim 18, wherein the infrared light reflected from the blackbody element and visible through the substrate is from the exposed portion of the blackbody film disk that is not obstructed by the annular film holder.
20. The factory interface according to claim 17, wherein the predetermined position is perpendicularly spaced away from the blackbody element.