Method for manufacturing an interposer electronic module, structure of an interposer electronic module, and semiconductor package structure

Abstract

This invention provides an interposer electronic module used in the semiconductor production and manufacturing fields, a method for manufacturing an interposer electronic module, an interposer electronic module structure, and a semiconductor package structure. [Solution] The interposer electronic module M1 comprises an insulating layer 10 and a plurality of conductors 20 that completely or partially cover the insulating layer. The insulating layer is made of a material that has an insulating effect, and the conductors are columnar in shape and have excellent conductivity. In the interposer electronic module, at least one end face 21 of each conductor is exposed from the surface of the insulating layer. The aforementioned interposer electronic module has the same effect as a passive element and can be used as an interposer module to connect chips to chips, chips to circuit boards, or circuit boards to circuit boards, improving upon the complex manufacturing process of conventional methods and offering greater versatility.

Description

Technical Field

[0001] The present invention relates to an interposer used in the field of semiconductor production and manufacturing, and particularly relates to a method for manufacturing an interposer electronic module, an interposer electronic module structure, and a semiconductor package structure.

Background Art

[0002] All conventional advanced package manufacturing processes use a silicon substrate as the main interposer material. Current interposer modules are generated using layer-by-layer stacking. For example, the manufacturing process of semiconductor chips is to repeatedly stack layer by layer, align, and repeat the above various processing flows many times according to the conventional flow of performing TSV, coating, development, etching, plating, etc. on a silicon chip or a glass sheet, and finally stack to the target height.

[0003] According to the conventional manufacturing process of an interposer (layer / substrate), usually, a multi-layered interposer module can be manufactured only by repeatedly undergoing complicated manufacturing processes such as multi-stage stacking, drilling, and plating. Finally, the manufactured interposer cannot be used as a medium for connecting the chip and the circuit board.

[0004] In the aforementioned interposer, for example, because it is a manufacturing process of multi-layer stacking, there is a possibility of partial misalignment during drilling and alignment formed in each layer. When the number of layers increases, the misalignment of each layer becomes larger, which easily leads to a situation of short circuit or non-connection of the circuit.

[0005] In addition, each conductive layer may also lead to situations such as poor conductivity (errors in impedance / current / inductance, etc.) due to different production conditions, for example, different parameters of the plating solution, which will easily result in a decrease in production yield.

[0006] To further improve yield and reduce production costs, the inventors have overcome the difficulties encountered in the production of conventional interposer modules by proposing appropriate solutions. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Taiwanese Patent Publication No. 2023-31971 [Overview of the project] [Means for solving the problem]

[0008] To solve the problems encountered during the production of the interposer module described above, the present invention provides: A workpiece pre-molding step to obtain a pre-manufactured and molded workpiece comprising a silicon substrate, a conductor positioned on the surface of the silicon substrate according to predetermined positions, and a resin layer for fixing the silicon substrate and the conductor; An insulating layer molding step is to apply or inject an insulating adhesive, an insulating mold sealing material, or a powder metallurgy ceramic material onto the outside of the pre-formed workpiece using a molding method to cover the workpiece and form an insulating layer; A removal step is performed in which the above-mentioned insulating layer molding step removes the above-mentioned silicone substrate, the above-mentioned resin layer, and a portion of the above-mentioned insulating layer from the above-mentioned workpiece so that the above-mentioned conductor is completely covered by the above-mentioned insulating layer; A finishing step in which at least one end face of the conductor is exposed or protrudes from the insulating layer by trimming the finishing method. The present invention provides a manufacturing method for producing interposer electronic modules, including [specific components / features].

[0009] The present invention further provides an interposer electronic module manufactured by the above-described manufacturing method, and a semiconductor package structure that utilizes this interposer electronic module.

[0010] The interposer electronic module of the present invention has advantages such as simplified manufacturing processes, simple structure, high versatility, and improved production efficiency. [Brief explanation of the drawing]

[0011] [Figure 1A] This is a schematic diagram of the structure of the interposer electronic module in the present invention. [Figure 1B] This is a schematic diagram of the structure of the interposer electronic module in the present invention. [Figure 1C] This is a schematic diagram of the structure of the interposer electronic module in the present invention. [Figure 2] This is a schematic diagram of the semiconductor package structure in the present invention. [Figure 3] This is a schematic diagram of the semiconductor package structure in the present invention. [Figure 4] This is a schematic diagram of the semiconductor package structure in the present invention. [Figure 5] This is a flowchart of the pre-forming step for the interposer electronic module in the present invention. [Figure 6] This is a schematic diagram of the structure of the workpiece of the interposer electronic module according to the present invention. [Figure 7] This is a schematic diagram of the structure of the insulating layer molding step of the interposer electronic module according to the present invention. [Figure 8] This is a schematic diagram of the structure of the interposer electronic module removal step in the present invention. [Figure 9A] This is a schematic diagram of the structure of the interposer electronic module after the finishing step in the present invention. [Figure 9B] This is a schematic diagram of the structure of the interposer electronic module after the finishing step in the present invention. [Figure 9C] This is a schematic diagram of the structure of the interposer electronic module after the finishing step in the present invention. [Figure 10A] This is a schematic diagram of the structure of the interposer electronic module in the present invention. [Figure 10B]It is a schematic structural diagram of an interposer electronic module in the present invention. [Figure 10C] It is a schematic structural diagram of an interposer electronic module in the present invention. [Figure 10D] It is a schematic structural diagram of an interposer electronic module in the present invention.

Embodiments for Carrying Out the Invention

[0012] As shown in FIGS. 1A to 1C, the present invention is an interposer electronic module that can be used in a semiconductor manufacturing process and a method for manufacturing the same. The interposer electronic module can be used as an interposer that connects chip to chip, chip to circuit board, or circuit board to circuit board, having the same effect as a passive element.

[0013] As shown in FIGS. 1A to 1C, the above-mentioned interposer electronic modules M1 to M3 include an insulating layer 10 and a plurality of conductors 20 that are completely or partially covered by the insulating layer 10. In this embodiment, the above-mentioned insulating layer 10 covers the plurality of conductors 20, and each conductor 20 is separated to avoid short-circuiting due to contact. Here, the insulating layer 10 is a molding encapsulation material or a ceramic material commonly used in the semiconductor field. The aforementioned molding encapsulation materials, such as liquid molding encapsulation materials, solid molding encapsulation materials, sheet molding encapsulation materials, etc., are polymer polymers with insulating effects, such as general epoxy resins, underfills or inorganic powders. In this embodiment, the insulating layer 10 is an epoxy resin, and the insulating layer 10 is a coating layer formed through molding. By injecting resin under pressure in a vacuum mold, the air inside the insulating layer can be extruded to make the inside of the insulating layer 10 completely vacuum and bubble-free. The above-mentioned insulating layer 10 can also be coated outside the plurality of conductors 20 by a powder metallurgy method using a ceramic material, so that each conductor 20 is separated from each other and does not contact.

[0014] The conductor 20 described above is columnar in shape and has excellent conductivity. It may be a metal such as copper, gold, aluminum, silver or alloys thereof, which are commonly used for circuit conductivity, or another dissimilar conductor such as graphite. The conductor 20 includes but is not limited to materials such as superconductors and semiconductors, and is only required to be able to conduct electric current. The present invention does not limit this. The conductor 20 described above has a diameter of 50 μm to 2000 μm or more (specifically, diameters of 50 μm, 60 μm, 80 μm, 100 μm, 120 μm, 150 μm, 200 μm, 300 μm and 300 to 2000 μm or more) and a length of 100 μm to 2000 μm or more (specifically, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 3 These are elongated cylinders, primarily made of copper metal, with lengths of 50 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm, 1400 μm, 1500 μm, 1600 μm, 1700 μm, 1800 μm, 1900 μm, 2000 μm, and 2000 μm or more.

[0015] The shape of the conductor 20 may be a slender cylinder, or a column with an irregular cross-section, such as a polygonal prism, triangular prism, or rectangular prism. In addition to a slender prism, it may be a column of various shapes, such as a cruciform prism, T-shaped prism, L-shaped prism, U-shaped prism, or Y-shaped prism. Since the number of exposed ends differs for various shaped columns, each is determined according to the actual production needs. The silicon substrate 30 is mainly made of silicon material, but other materials may be used. Metal materials with small thermal deformation are mainly selected and used, and polymer or ceramic materials may also be selected and used if suitable for the purpose, but the present invention is not limited thereto.

[0016] In this embodiment, the conductor 20 is an elongated cylinder mainly made of copper metal with a diameter of 50 μm to 2000 μm or more, and the conductor 20 has both end faces 21, with at least one end face 21 exposed from the upper surface 11 or lower surface 12 of the insulating layer 10.

[0017] As shown in Figure 1A, in the interposer electronic module M1 described above, both end faces 21 of the multiple conductors 20 are flush with the upper surface 11 and lower surface 12 of the insulating layer 10. The definition of "flush" here means that both end faces 21 of each conductor and the upper surface 11 or lower surface 12 of the insulating layer 10 are on the same horizontal plane or close to the same horizontal plane. For example, the difference in the vertical direction is within a distance of 10 to 50 μm, or both end faces 21 of each conductor 20 are exposed from the upper surface 11 and lower surface 12 of the insulating layer 10. The definition of "exposed" of both end faces 21 here means that they are exposed if the insulating layer 10 can contact the end faces 21 of the conductors 20, and regardless of whether the height of the conductor 20 is lower than the surface of the insulating layer 10 or whether it is flush with the upper surface 11 or lower surface 12 of the insulating layer 10, the side edges of each conductor 20 are embedded within the insulating layer 10.

[0018] As shown in Figure 1B, in the interposer electronic module M2 described above, one end face 21 of the plurality of conductors 20 is flush with one side surface of the insulating layer 10, while the other end protrudes from the other side surface of the insulating layer 10. Here, "protruding" is defined as the height of the end face 21 of one end of the conductor 20 being higher than the surface of the insulating layer 10, and one end of the conductor 20 being outside the insulating layer 10.

[0019] Taking Figure 1B as an example, the aforementioned multiple conductors 20 protrude from the upper surface 11 of the insulating layer 10, and the aforementioned multiple conductors 20 are flush with the lower surface 12 of the insulating layer 10, with only the lower end surface of each conductor 20 exposed from the lower surface 12. The state in Figure 1B is merely illustrative and not an absolute, single embodiment. The conductors 20 may protrude from the lower surface 12 and be flush with the upper surface 11, or only one end surface 21 of some of the individual conductors 20 may protrude from one side of the insulating layer 10, while the other conductors do not protrude. Since it is impossible to cover all possible combinations of arrangements, this example is merely illustrative for explanatory purposes.

[0020] As shown in Figure 1C, in the interposer electronic module M3 described above, both end faces 21 of the plurality of conductors 20 protrude from both sides of the insulating layer 10. Taking Figure 1C as an example, the multiple conductors 20 have both end faces 21 protruding from the upper surface 11 and the lower surface 12 of the insulating layer 10, respectively. The state in Figure 1C is merely illustrative and not an absolute, single embodiment. Here, among the individual conductors 20, there may be cases where both ends protrude from the surface, or where only one end face 21 of some of the individual conductors 20 protrudes from one side of the insulating layer 10, while other conductors do not protrude, or where both end faces 21 of the individual conductors 20 protrude from the surface, while the ends of the other conductors 20 are exposed from the surface of the insulating layer 10. Since it is impossible to cover all combinations of such arrangements, this example is merely illustrative for explanation purposes and does not limit the individual states.

[0021] As shown in Figure 2, which represents the semiconductor package structure, the interposer electronic module M1 in Figure 1A is used as an interposer, and chips can be connected to both the top and bottom. By using a chip-size package (CSP), a ball grid array package (BGA), or other conventional packaging technology, the top and bottom of the interposer electronic module M1 are connected to chips C1 and C2 using current package bonding technology. Each contact of each chip C1 and C2 can be connected to each conductor 20, thereby enabling each chip C1 and C2 to conduct current effectively and produce a connection effect.

[0022] As shown in Figure 3, which is a semiconductor package structure, the interposer electronic module M2 in Figure 1B is used as an interposer, and the upper part of the interposer electronic module M2 can be connected to the chip C1. The upper part of the interposer electronic module M2 is connected to the chip C1 by a chip-size package (CSP), a ball grid array package (BGA), or other conventional packaging technology, while the lower conductor 20 of the interposer electronic module M2 protrudes from the insulating layer 10 and can be directly contacted to connect to the circuit board B1. The circuit board B1 is provided with circuits to be connected, and each contact of the chip C1 can be connected to each conductor 20 via the package, so the lower end of each conductor 20 is also in communication with the circuit of the circuit board B1, enabling the chip C1 and the circuit board B1 to conduct current effectively and produce a connection effect.

[0023] As shown in Figure 4, which represents the semiconductor package structure, the interposer electronic module M3 in Figure 1C is used as an interposer. The upper and lower ends of the interposer electronic module M3 can be connected to circuit boards B1 and B2, respectively. Since both ends of the conductor 20 of the interposer electronic module M3 protrude from the surface of the insulating layer 10, each conductor 20 can directly contact each circuit board B1 and B2 to achieve circuit communication, enabling the circuit boards B1 and B2 to conduct current effectively and produce a connection effect.

[0024] Figures 2 to 4 above are merely general examples, and depending on various package needs or various connection targets and circuit designs, there may be needs to connect some conductors to the chip or some conductors to the circuit board. Therefore, the conductor design of the interposer electronic module may also have the possibility of some conductors protruding and others being exposed from the surface of the insulating layer. The embodiments described above are merely specific embodiments of the concept of the present invention and are not limiting.

[0025] The method for manufacturing an interposer electronic module of the present invention is shown in Figures 5 to 9. The embodiments of the present invention disclose a method for manufacturing an interposer electronic module used in a semiconductor manufacturing process, and include a workpiece pre-forming step, an insulating layer molding step, a removal step, and a finishing step.

[0026] As shown in Figure 5, the workpiece pre-forming step includes a silicone substrate bonding step, a pin positioning step, a module mounting step, and a module synthesis step.

[0027] In the pin positioning step, a pin positioning mold D and a plurality of conductors 20 are prepared, and the conductors 20 are placed in predetermined positions on the pin positioning mold D by manual or mechanical means, with a portion of each conductor 20 protruding from the surface of the pin positioning mold.

[0028] In the silicone substrate bonding step, first, a resin layer 40 is formed by uniformly applying a resin, mainly a thermosetting resin such as epoxy resin, to the surface of a peelable film. Then, the silicone substrate 30 is attached on top of the resin layer 40, and the silicone substrate 30 is bonded to the resin layer 40, integrating the silicone substrate 30, the resin layer 40, and the film. Next, the silicone substrate 30 is cut to the required size according to production needs, but the film can be peeled off when it is needed for use.

[0029] The pin positioning step and the silicone substrate bonding step may be performed simultaneously, or one may be performed before the other; there is no requirement regarding the order of the two steps.

[0030] As shown in Figure 5, in the module mounting step, the cut silicon substrate 30 and resin layer 40 are positioned according to production needs, such that the resin layer 40 corresponds to the end of the conductor 20, and the resin layer 40 can form a state in which it is connected to the conductor 20 by gravity and the weight of the silicon substrate 30.

[0031] As shown in Figure 5, in the module synthesis step, after the aforementioned flow is completed and the resin layer 40 and silicone substrate 30 are positioned corresponding to each conductor 20 to be joined, downward pressure is applied via the pressing plate P, and the top end of each conductor 20 penetrates the resin layer 40 until it abuts against the surface where the silicone substrate 30 and resin layer 40 are bonded to each other, thereby allowing each conductor 20 to penetrate the resin layer 40 appropriately. After completing the aforementioned step, a large number of pre-formed workpieces T can be completed. Each workpiece T comprises a silicone substrate 30, a resin layer 40, and at least one or more conductors 20. Then, each workpiece T is placed in an oven and baked at 165-180°C for approximately 2-6 hours. Due to the nature of thermosetting resin, each resin layer 40 receives heat and reaches its curing transformation temperature, after which it can firmly fix each conductor 20 and the silicone substrate 30, and finally the fixing of the resin layer 40 is completed, and a workpiece T that has been molded is obtained. Since the components of the resin layer 40 harden after being heated and become irreversible, each pin also has better reliability when fixed in place.

[0032] As shown in Figure 6, after completing various steps in the aforementioned workpiece pre-forming step, such as bonding the silicon substrate, positioning the pins, mounting the modules, and assembling the modules in various manufacturing processes, a pre-formed workpiece T can be obtained. The workpiece T comprises a silicon substrate 30, at least one conductor 20 provided on the silicon substrate 30, and a resin layer 40 for fixing the silicon substrate 30 and the conductor 20.

[0033] As shown in Figure 7, in the insulating layer molding step, an insulating effect is provided by coating the workpiece T with an insulating adhesive, an insulating mold sealing material, or a powder metallurgy ceramic material by applying or injecting it onto the outside of the pre-molded workpiece T using a molding method. In this embodiment, epoxy resin is molded onto the upper surface of the silicon substrate 30 of the workpiece T, and the air inside the insulating layer is pushed out by pressurized resin injection in a vacuum mold, thereby forming an insulating layer 10 in the epoxy resin that is completely vacuum and bubble-free inside. The insulating layer 10 completely covers each conductor 20 of the workpiece T, and its height is greater than the total height of each conductor 20.

[0034] As shown in Figure 8, in the removal step, the resin layer 40 and a portion of the insulating layer 10 of the silicone substrate 30 of the workpiece T are removed so that the conductor 20 is completely covered with the insulating layer 10. In this embodiment, first the silicone substrate 30 of the workpiece T is removed by a rough polishing method. Since each conductor 20 is already covered with the insulating layer 10, the predetermined position where each conductor 20 is already placed is secured by the insulating layer 10 and does not move. Furthermore, by removing a portion of the insulating layer 10 located above each conductor 20 by a rough polishing method, the end face 21 of each conductor 20 is exposed from the surface of the insulating layer 10.

[0035] More specifically, in the removal step, at least one polishing process can be performed using an abrasive wheel with a grit size of #320 to #15000. First, 70 to 90% of the thickness of the workpiece T is roughly polished using an abrasive wheel with large abrasive particles, for example, #320 to #1500, and a fast polishing speed. In the second stage of fine polishing, the remaining 30 to 10% is polished using smaller particles, for example, #1500 to #6000, and at a slower rate than the rough polishing. Finally, depending on the needs, a third stage of polishing can be performed, in which the workpiece T is polished with finer abrasive particles to form a smooth surface. In this removal step, the order in which the silicon substrate 30 and some of the insulating layer 10 are removed can be rearranged or the order can be adjusted depending on the needs. Whether or not the polishing step is necessary can be determined depending on the needs, and the present invention is not limited thereto.

[0036] The aforementioned large-area polishing improves the flatness of the interposer electronic module, and allows for tighter contact when connecting to other elements on both the upper and lower sides of the interposer electronic module.

[0037] In Figures 9A to 9C, the finishing step involves trimming the final interposer electronic modules M1 to M3 as shown in Figure 9 using a finishing method that meets the needs of various interposer electronic modules. In this finishing step, the insulating layer 10 is removed by laser or etching, thereby manufacturing the interposer electronic modules M1 to M3. For example, the interposer electronic module M1 may have one end face 21 or both end faces 21 of the conductor 20 exposed from the surface of the insulating layer 10, or, for example, the interposer electronic modules M2 and M3 may have one end face 21 or both end faces 21 of the conductor 20 protruding from the insulating layer 10.

[0038] As shown in Figures 10A to 10D, the interposer electronic modules M4 to M7 of the present invention do not necessarily have a single plane. Depending on manufacturing needs, for example, the central part of the insulating layer of the interposer electronic module M4 in Figure 10A may be trimmed downwards, causing a localized conductor to protrude.

[0039] Alternatively, as shown in Figure 10B, the upper and lower sides of the insulating layer of the interposer electronic module M5 may be trimmed, causing the trimmed local conductors to protrude.

[0040] Alternatively, as shown in Figure 10C, the upper center of the insulating layer of the interposer electronic module M6 may be trimmed downwards, and both lower sides of the insulating layer may be trimmed upwards, causing the trimmed local conductors to protrude.

[0041] Alternatively, as shown in Figure 10D, the interposer electronic module M7 may be trimmed on both the upper and lower sides of the center of the insulating layer, causing the trimmed local conductors to protrude.

[0042] The above are merely examples and do not limit the manufacturing process and structure of the present invention. Due to the extremely large variations in production possibilities, the planar position of the interposer electronic module can be adjusted according to production requirements, or specific conductors can be made to protrude or not protrude according to needs, and both are within the scope of interpretation of the present invention.

[0043] The aforementioned interposer electronic module can be cut to the appropriate size according to the needs, allowing it to act as a connection mediator between different media. As previously explained, the aforementioned interposer electronic module has the same effect as a passive element and can be used to connect chips to chips, chips to circuit boards, or circuit boards to circuit boards.

[0044] The interposer electronic module and its manufacturing method according to the present invention have the following advantages.

[0045] 1. The interposer electronic module of the present invention does not need to be manufactured based on a layer-by-layer stacking method as in conventional manufacturing processes. In conventional manufacturing processes, through-silicon vias (TSVs) must be manufactured, so after completing one layer, drilling and plating must be performed before stacking and aligning the next layer, in order to continue production to a predetermined height. However, in the present invention, the length of the conductor is determined by the final thickness of the interposer, and only a single insulating layer is required, eliminating the need to stack layers in stages to form a predetermined height, thus significantly reducing the complexity and difficulty of the manufacturing process.

[0046] 2. The interposer electronic module of the present invention can be manufactured offline, meaning that it is manufactured in advance and then mounted onto the chip or circuit board to be packaged, eliminating the need to manufacture it stacked upwards together with the circuit board or chip. This significantly reduces undesirable effects caused by the production process, such as reducing problems like misalignment of holes or poor conductivity, and all of these types of problems can be avoided by simplifying the manufacturing process and the structure of the interposer module.

[0047] 3. The present invention is highly versatile, has a wide range of applications, and is not limited by conventional manufacturing processes. The interposer electronic module of the present invention can be directly mounted between multiple electronic components, just like a typical passive element. As mentioned above, it can be used to connect chips to chips, chips to circuit boards, or circuit boards to circuit boards, and other possibilities can even be considered. Since the conductor alignment process is completed in advance, the positions of all conductors are already predetermined positions for connecting circuits, making installation errors less likely.

[0048] 4. Conventional methods cannot ensure uniform height for individual conductors (copper pillars) because, when fixing conductors (copper pillars) to a circuit board, thin conductors cannot be firmly fixed to the circuit board and a complete flattening process cannot be performed. However, the method of the present invention fixes all conductors with an insulating layer, and both the upper and lower surfaces of the insulating layer are directly polished, making it easy to process all conductors to the same height. Moreover, it is an offline production method and does not pose a risk of affecting existing electronic components.

[0049] 5. The present invention allows for the incorporation of more and smaller conductors into interposer electronic modules. In conventional technology, requiring more I / Os on a circuit board of the same area necessitates more drilling and plating, further increasing production difficulties. However, the present invention, by reducing the size and pre-positioning of conductors, can significantly increase the number of I / Os within the interposer and make the manufacturing process more advanced.

[0050] 6. Regarding production problems that are difficult to handle in conventional, well-known methods, when drilling silicon substrates / glass / FR4 / FR5 / BT, the processing becomes more difficult as the size and thickness increase. In general needs, the pore diameter of TSVs is getting smaller and the height is getting higher. In conventional methods, the plating after drilling becomes more difficult as the size and height increase. The method of the present invention can improve upon the shortcomings of conventional manufacturing processes because the manufacturing process is consistent even when the conductor diameter is 50 μm to 2000 μm and the height (thickness) is 100 μm to 2000 μm or more. [Explanation of symbols]

[0051] 10 Insulating layer 11 Top side 12 Bottom side 20 Conductors 21 End face 30 Silicone substrate 40 resin layer M1 Interposer Electronic Module M2 Interposer Electronic Module M3 Interposer Electronic Module M4 Interposer Electronic Module M5 Interposer Electronic Module M6 Interposer Electronic Module M7 Interposer Electronic Module C1 Chip C2 Chip B1 Circuit Board B2 Circuit Board T Work

Claims

1. A workpiece pre-molding step to obtain a pre-manufactured and molded workpiece comprising a silicon substrate, a conductor positioned on the surface of the silicon substrate according to predetermined positions, and a resin layer for fixing the silicon substrate and the conductor; An insulating layer molding step is to apply or inject an insulating adhesive, an insulating mold sealing material, or a powder metallurgy ceramic material onto the outside of the pre-formed workpiece using a molding method to cover the workpiece and form an insulating layer; A removal step in which the above-mentioned insulating layer molding step removes the above-mentioned silicone substrate, the above-mentioned resin layer, and a portion of the above-mentioned insulating layer from the above-mentioned workpiece so that the above-mentioned conductor is completely covered by the above-mentioned insulating layer; A finishing step in which at least one end face of the conductor is exposed or protrudes from the insulating layer by trimming the finishing method. A manufacturing method for producing an interposer electronic module, including [a specific component].

2. The workpiece preforming step is, A pin positioning step of positioning each pin within a pin positioning mold; A silicone substrate bonding step involves applying and forming a resin layer on a film to fix the silicone substrate to the resin layer; A module mounting step in which the silicone substrate and resin layer are moved to a pin positioning mold having each pin, aligned and positioned, and then moved to form a bond between the resin layer of the silicone substrate and each corresponding pin; After the above steps are completed, the silicon substrate is pressed with a pressing plate, the silicon substrate and resin layer bonded to each pin are heated, and after heating to the curing temperature of the resin layer, it is cured and molded to form a module synthesis step. The manufacturing method according to claim 1, including

3. An electrically insulating polymer comprising an insulating layer having an upper surface and a lower surface; A plurality of conductors partially covered with the above insulating layer, each conductor having both end faces, with at least one of the end faces exposed from the upper or lower surface of the insulating layer, and each conductor being a columnar body with a diameter of 50 μm or more and a length of 100 μm or more, and An interposer electronic module manufactured by the method according to any one of claims 1 to 2, comprising:

4. The first chip and; The second chip; An interposer electronic module, located between the first chip and the second chip, manufactured by the manufacturing method described in any one of claims 1 to 2, An insulating layer which is an electrically insulating polymer; A plurality of conductors partially covered with the insulating layer, each conductor being a columnar body with a diameter of 50 μm or more and a length of 100 μm or more, each conductor being exposed or protruding from the insulating layer, and the interposer electronic module connecting the first chip and the second chip with each conductor, and Interposer electronic module equipped with A semiconductor package structure comprising the following features.

5. Tip and; Circuit board and; An interposer electronic module, located between a chip and a circuit board, manufactured by the manufacturing method described in any one of claims 1 to 2, An insulating layer which is an electrically insulating polymer; A plurality of conductors partially covered with the insulating layer, each conductor being a columnar body with a diameter of 50 μm or more and a length of 100 μm or more, each conductor being exposed or protruding from the insulating layer, and the interposer electronic module connecting the chip and the circuit board with each conductor, and Interposer electronic module equipped with A semiconductor package structure comprising the following features.

6. First circuit board and; The second circuit board and; An interposer electronic module, located between the first circuit board and the second circuit board, manufactured by the manufacturing method described in any one of claims 1 to 2, An insulating layer which is an electrically insulating polymer; A plurality of conductors partially covered with an insulating layer, each conductor being a columnar body with a diameter of 50 μm or more and a length of 100 μm or more, each conductor being exposed or protruding from the insulating layer, and the interposer electronic module connecting the first circuit board and the second circuit board with each conductor, and Interposer electronic module equipped with A semiconductor package structure comprising the following features.

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