Multilayer electronic components

Abstract

We provide a multilayer electronic component that offers excellent high-temperature reliability and achieves the target TCC characteristics. [Solution] A stacked electronic component according to one embodiment of the present invention includes a body including a dielectric layer containing (Ba,Ca)TiO3 and BaTiO3 as main components, and a capacitance forming section including internal electrodes arranged alternately with the dielectric layer, and an external electrode arranged on the body, wherein the dielectric layer contains calcium (Ca) and titanium (Ti), and when the atomic percentage of rare earth elements is 0.1 at% or more, the dielectric layer includes the first secondary phase, and the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance forming section, may be more than 0% and less than 4.58%.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] These multilayer ceramic capacitors offer the advantages of being small yet guaranteeing high capacitance and being easy to mount, making them suitable for use as components in various electronic devices. As electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] As the market for MLCCs for electrical applications expands, in addition to the market for IT applications, there is a growing demand for products with superior reliability under high-voltage and high-temperature environments within the same capacitance range.

[0005] On the other hand, it has been reported that even with the same dielectric composition, there are significant differences in reliability depending on the microstructure, the distribution and degree of solid solution of additive elements, and the process conditions. Recently, research has been actively being conducted on the appropriate formation of a secondary phase with a high content of rare earth additives that is not solid-dissolved in the crystal grains within the dielectric layer, as this improves reliability and enables the achievement of the target temperature-dependent capacitance change characteristics (TCC characteristics). [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2001-6966 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] One of the various problems that this invention aims to solve is to provide a multilayer electronic component with excellent high-temperature reliability.

[0008] One of the various problems that this invention aims to solve is to provide a stacked electronic component that achieves the target TCC characteristics.

[0009] However, the various problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0010] A stacked electronic component according to one embodiment of the present invention includes a body including a dielectric layer containing (Ba,Ca)TiO3 and BaTiO3 as main components, and a capacitance forming section including internal electrodes arranged alternately with the dielectric layer, and an external electrode arranged on the body, wherein the dielectric layer contains calcium (Ca) and titanium (Ti), and when the atomic percentage of rare earth elements is 0.1 at% or more, the dielectric layer includes the first secondary phase, and the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance forming section, may be more than 0% and less than 4.58%.

[0011] A multilayer electronic component according to another embodiment of the present invention includes a main body including a capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer, and external electrodes disposed on the main body. When a secondary phase containing calcium (Ca) and titanium (Ti) and having an atomic percentage of rare earth elements of 0.1 at% or more is defined as a first secondary phase, and a secondary phase containing calcium (Ca), silicon (Si), and titanium (Ti) and having an atomic percentage of rare earth elements of 0 at% or more and less than 0.1 at% is defined as a second secondary phase, the dielectric layer includes the first secondary phase and the second secondary phase. Based on the cross-sectional area of the capacitance forming portion, the area percentage of the first secondary phase contained in the dielectric layer is more than 0% and less than 4.58% with respect to the area excluding the internal electrodes, and the area percentage of the second secondary phase contained in the dielectric layer with respect to the cross-sectional area of the capacitance forming portion may be 0.05% or more and less than 0.1%.

Advantages of the Invention

[0012] One of the various effects of the present invention is to improve the high-temperature reliability of the multilayer electronic component.

[0013] One of the various effects of the present invention is to achieve the target TCC characteristics of the multilayer electronic component.

[0014] However, the diverse and significant advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0015] [Figure 1] A perspective view schematically showing a multilayer electronic component according to an embodiment of the present invention is shown. [Figure 2] A separated perspective view schematically showing the laminated structure of the internal electrodes is shown. [Figure 3] A cross-sectional view taken along line I-I' of FIG. 1 is schematically shown. [Figure 4] A cross-sectional view taken along line II-II' of FIG. 1 is schematically shown. [Figure 5]It schematically shows a cross-sectional view taken along line II-II' of FIG. 1 according to another embodiment of the present invention. [Figure 6] It schematically shows an enlarged view of the P region in FIG. 3. [Figure 7] (a) is an image obtained by photographing a cross-section of a dielectric layer according to an embodiment of the present invention through a scanning transmission electron microscope (STEM), (b) is an image obtained by mapping silicon (Si) in the same region by energy-dispersive X-ray spectroscopy (EDS), and (c) is an image obtained by mapping a rare earth element (RE) in the same region by energy-dispersive X-ray spectroscopy (EDS). [Figure 8] (a) is an image obtained by photographing a cross-section of a dielectric layer according to another embodiment of the present invention through a scanning transmission electron microscope (STEM) and then mapping silicon (Si) by energy-dispersive X-ray spectroscopy (EDS), and (b) is an image obtained by mapping a rare earth element (RE) in the same region by energy-dispersive X-ray spectroscopy (EDS). [Figure 9] (a) is an image obtained by photographing a cross-section of a capacitance forming portion of a comparative example through a scanning transmission electron microscope (STEM), (b) is an image obtained by mapping elements in the same region as (a) by energy-dispersive X-ray spectroscopy (EDS), (c) is shown after selecting a region where a first secondary phase is distributed through a program built in the scanning transmission electron microscope (STEM) for the same region as (a), (d) is an image obtained by photographing a cross-section of a capacitance forming portion of an embodiment through a scanning transmission electron microscope (STEM), (e) is an image obtained by mapping elements in the same region as (d) by energy-dispersive X-ray spectroscopy (EDS), and (f) is shown after selecting a region where a first secondary phase contained in the dielectric layer is distributed with respect to the area excluding the internal electrode based on the cross-sectional area of the capacitance forming portion for the same region as (d) through a program built in the scanning transmission electron microscope (STEM).

Embodiments for Carrying Out the Invention

[0016] Embodiments of the present invention will be described below with reference to specific embodiments and accompanying drawings. However, embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to give a more complete explanation of the present invention to a person of the ordinary skill. Accordingly, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for a clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

[0017] Furthermore, in order to clearly illustrate the present invention in the drawings, parts unrelated to the description have been omitted, and the size and thickness of each component shown are arbitrarily indicated for the convenience of explanation; therefore, the present invention is not necessarily limited by the illustrations. Also, components with the same function within the scope of the same concept are described using the same reference numerals. Moreover, throughout the specification, when a part "includes" a certain component, unless otherwise stated to the contrary, it does not mean that other components are excluded, but rather that other components may be further included.

[0018] In drawings, the Z direction can be defined as the first direction, the lamination direction, or the thickness (T) direction; the X direction as the second direction or the length (L) direction; and the Y direction as the third direction or the width (W) direction.

[0019] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a separated perspective view showing the stacked structure of the internal electrodes, Figure 3 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figure 4 schematically shows a cross-sectional view along the line II-II' in Figure 1, Figure 5 schematically shows a cross-sectional view along the line II-II' in Figure 1 according to another embodiment of the present invention, and Figure 6 schematically shows an enlarged view of region P in Figure 3.

[0020] Hereinafter, with reference to Figures 1 to 6, a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic components using dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0021] A stacked electronic component 100 according to one embodiment of the present invention includes a main body 110 including a dielectric layer 111 containing (Ba,Ca)TiO3 and BaTiO3 as main components, and a capacitance forming section Ac including internal electrodes 121 and 122 arranged alternately with the dielectric layer 111, and external electrodes 131 and 132 arranged on the main body 110, wherein the dielectric layer 111 contains calcium (Ca) and titanium (Ti), and the atomic percentage of rare earth elements is 0.1 at% or more, and the dielectric layer 111 includes the first secondary phase 141, and the area percentage of the first secondary phase 141 included in the dielectric layer 111 with respect to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance forming section Ac, may be greater than 0% and less than 4.58%.

[0022] A stacked electronic component 100 according to another embodiment of the present invention includes a body 110 including a dielectric layer 111 and a capacitance forming section Ac including internal electrodes 121 and 122 arranged alternately with the dielectric layer 111, and external electrodes 131 and 132 arranged on the body 110, comprising a first secondary phase 141 containing calcium (Ca) and titanium (Ti), with an atomic percentage of rare earth elements of 0.1 at% or more, and a second secondary phase containing calcium (Ca), silicon (Si) and titanium (Ti), with an atomic percentage of rare earth elements of 0 at% or more. When a secondary phase less than 1 is defined as the second secondary phase 142, the dielectric layer 111 includes the first secondary phase 141 and the second secondary phase 142. Based on the cross-sectional area of ​​the capacitance forming portion Ac, the area percentage of the first secondary phase 141 included in the dielectric layer 111 relative to the area excluding the internal electrodes is greater than 0% and less than 4.58%. Based on the cross-sectional area of ​​the capacitance forming portion Ac, the area percentage of the second secondary phase 142 included in the dielectric layer 111 relative to the area excluding the internal electrodes may be 0.05% or more and less than 0.1%.

[0023] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0024] More specifically, the main body 110 may include a capacitance forming section Ac which is located inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately arranged facing each other with a dielectric layer 111 in between, thereby forming a capacitance.

[0025] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be hexahedral or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but rather substantially hexahedral.

[0026] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in a third direction.

[0027] The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0028] The raw materials for forming the dielectric layer 111 are not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3) materials can be used, such as barium titanate materials, lead-composite perovskite materials, or strontium titanate materials. Barium titanate materials can include BaTiO3 ceramic particles, and examples of ceramic particles include BaTiO3, and BaTiO3 in which Ca (calcium), Zr (zirconium), etc., are partially dissolved (BaTiO3). 1-x Cax )TiO3(0 < x < 1), Ba(Ti 1-y Ca y )O3(0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3(0 < y < !) etc. can be mentioned.

[0029] To improve high - temperature reliability, rather than using only BaTiO3 with a Curie temperature (Curie temperature, T c ) of about 120°C as the main component raw material, it may be easier to improve high - temperature reliability by using (Ba, Ca)TiO3 with a higher Curie temperature in combination or alone. That is, it is preferable to use (Ba, Ca)TiO3 and / or BaTiO3 as the main component, and it is more preferable that the content of the (Ba, Ca)TiO3 substance (meaning wt%, at% or mol%) is not less than the content of the BaTiO3 substance (meaning wt%, at% or mol%), but it is not particularly limited thereto.

[0030] More specifically, for example, the main components of the dielectric layer 111 are composed of (Ba, Ca)TiO3 and BaTiO3. When the total number of moles of (Ba, Ca)TiO3 and BaTiO3 in the main components is set to 100, the molar ratio of (Ba, Ca)TiO3:BaTiO3 can be 10:90 to 90:10, preferably 50:50 to 90:10, and more preferably 70:30 to 90:10.

[0031] When using (Ba, Ca)TiO3 and / or BaTiO3 as the main component raw material, it can contain particles of (Ba, Ca)TiO3 and / or BaTiO3 after firing as the main component, which means that the dielectric layer 111 contains crystal grains with (Ba, Ca)TiO3 and / or BaTiO3 as the crystal lattice as the main component.

[0032] Furthermore, the raw materials for forming the dielectric layer 111 can include particles such as (Ba,Ca)TiO3 and / or BaTiO3, to which various ceramic additives, organic solvents, binders, dispersants, etc., can be added according to the purpose of the present invention.

[0033] More specifically, the dielectric layer 111 may include a main component of perovskite (ABO3), such as (Ba,Ca)TiO3 and / or BaTiO3 dielectric material, particles or crystal grains, and minor components, more specifically, the minor components may include the following first to fifth minor components.

[0034] Furthermore, as a more specific example of a method for measuring the elemental content of each component of the stacked electronic component 100 in the present invention, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, an analytical sample is prepared by thinning it using a focused ion beam (FIB) in the area to be measured. Then, the surface damage layer of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and after that, each component to be measured is mapped using an image obtained with SEM-EDS, TEM-EDS, or STEM-EDS to perform qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graphs for each component can be shown converted to the content of each element, for example, mass percentage (wt%), atomic percentage (at%), or mole percentage (mol%), and can also be shown converted to the content of other specific components relative to the content of a specific component.

[0035] Another method involves crushing the chip to select the region to be measured, and then analyzing the specific components of the selected region containing dielectric microstructure using instruments such as an inductively coupled plasma spectrometer (ICP-OES) or inductively coupled plasma mass spectrometer (ICP-MS).

[0036] In this invention, the content of a substance in a certain configuration or region can mean the average value of the substance in that configuration or region, unless there are special circumstances. For example, the statement later described as "the atomic percentage of rare earth elements in the first secondary phase 141 is 0.1 at% or more" can mean that the average atomic percentage of rare earth elements contained in the first secondary phase 141 is 0.1 at% or more. Furthermore, the statement later described as "the number of moles of minor elements per 100 moles of titanium (Ti) contained in the dielectric layer 111" can mean the average number of moles of minor elements per 100 moles of titanium (Ti) contained in the dielectric layer 111, and may be a value that has been analyzed and measured in at least a portion of the dielectric layer 111.

[0037] In this invention, "main component" can mean a component that accounts for a relatively large weight ratio, atomic ratio, or molar ratio compared to other components, and can mean a component that accounts for 50 wt% or more of the weight of the whole composition or the whole dielectric layer, a component that accounts for 50 at% or more of the atomic ratio, or a component that accounts for 50 mol% or more of the molar ratio. More specifically, for example, the dielectric layer can contain (Ba, Ca)TiO3 and / or BaTiO3 as the main component, can contain (Ba, Ca)TiO3 and / or BaTiO3 particles as the main component, or can contain (Ba, Ca)TiO3 and / or BaTiO3 crystal grains as the main component. In this case, if (Ba, Ca)TiO3 and BaTiO3 are included together, the whole particles or whole crystal grains of (Ba, Ca)TiO3 and BaTiO3 can be the main component.

[0038] Similarly, in the present invention, "sub-component" can mean a component that occupies a relatively small weight ratio, atomic ratio, or molar ratio compared to other components, and can mean a component that is less than 50 wt% based on the weight of the whole composition or the whole dielectric layer, a component that is less than 50 at% based on the number of atoms, or a component that is less than 50 mol% based on the number of moles.

[0039] a) First subcomponent In one embodiment of the present invention, the dielectric layer 111 contains a first minor component element, the first minor component element is a valence-variable acceptor element, the valence-variable acceptor element is at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn), preferably at least one of manganese (Mn) and vanadium (V), and more preferably manganese (Mn) and vanadium (V).

[0040] The first minor element may be an additive consisting of at least one oxide or carbonate of a valence-variable acceptor element, and may be added together with the main raw material before calcination.

[0041] The first minor component element, a valence-variable acceptor element, can play a role in reducing firing temperature, improving dielectric properties, insulation resistance (IR), and high-temperature reliability.

[0042] In this case, the number of moles of the first minor element contained in the dielectric layer 111 relative to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be between 0.1 moles and 1.0 moles, and if there are multiple first minor elements, the total number of moles of these combined can be defined as the number of moles of the first minor element.

[0043] If the number of moles of the first minor component element contained in the dielectric layer 111 is less than 0.1 moles per 100 moles of titanium (Ti) contained in the dielectric layer 111, the insulation resistance (IR) may decrease. If the number of moles of the first minor component element contained in the dielectric layer 111 is more than 1.0 mole per 100 moles of titanium (Ti) contained in the dielectric layer 111, the DC-bias change rate may decrease.

[0044] b) Second subcomponent In one embodiment of the present invention, the dielectric layer 111 may contain a second minor element, and the second minor element may be magnesium (Mg).

[0045] The second minor element may consist of at least one additive from among magnesium (Mg) oxides and carbonates, and may be added together with the main raw material before calcination.

[0046] Magnesium (Mg), the second minor component element, can impart reduction resistance and enhance the Reliability Class (RC) value. Here, the RC value can represent reliability under temperature conditions, reliability at high temperatures, reliability at high voltages, and lifetime evaluation.

[0047] In this case, the number of moles of the second minor element contained in the dielectric layer 111 relative to 100 moles of titanium (Ti) contained in the dielectric layer 111 may be 0.2 moles or more and 0.4 moles or less.

[0048] If the number of moles of the second minor element contained in the dielectric layer 111 is less than 0.2 moles relative to 100 moles of titanium (Ti) contained in the dielectric layer 111, reliability may be reduced. If the number of moles of the second minor element contained in the dielectric layer 111 is more than 0.4 moles relative to 100 moles of titanium (Ti) contained in the dielectric layer 111, the target TCC characteristics may not be met.

[0049] c) Third subcomponent In one embodiment of the present invention, the dielectric layer 111 may contain a third minor element, the third minor element may be a rare earth element, and the rare earth element may include, but is not limited to, at least one of yttrium (Y), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd).

[0050] Rare earth elements, which are the third minor component elements, can play a role in improving high-temperature reliability and thus enhance overall reliability.

[0051] The third minor element may be at least one additive from among oxides and carbonates of rare earth elements, and may be added together with the main raw materials before firing.

[0052] In this case, the number of moles of the third minor element contained in the dielectric layer 111 relative to 100 moles of titanium (Ti) contained in the dielectric layer 111 may be between 4.0 moles and 7.0 moles, and if there are multiple rare earth elements, the total number of moles of these combined can be defined as the number of moles of the third minor element.

[0053] If the number of moles of the third minor element contained in the dielectric layer 111 is less than 4.0 moles per 100 moles of titanium (Ti) contained in the dielectric layer 111, high-temperature reliability may decrease. If the number of moles of the third minor element contained in the dielectric layer 111 exceeds 7.0 moles per 100 moles of titanium (Ti) contained in the dielectric layer 111, the dielectric may become an n-type semiconductor, resulting in a decrease in insulation resistance (IR) or a decrease in high-temperature reliability.

[0054] d) Fourth subcomponent In one embodiment of the present invention, the dielectric layer 111 may further contain a fourth minor component element comprising at least one of barium (Ba) and calcium (Ca) by a minor component additive, preferably the fourth minor component element being at least one of barium (Ba) and calcium (Ca), and more preferably barium (Ba) and calcium (Ca).

[0055] The fourth minor element may consist of at least one additive, which is an oxide or carbonate of at least one element from among barium (Ba) and calcium (Ca). In other words, the fourth minor element can be a concept used to distinguish it from at least one of the barium (Ba) and calcium (Ca) contained in the main component, and in this invention, it can mean a fourth minor element that is not part of the main component but a separate minor component additive.

[0056] On the other hand, because the detectable content of barium (Ba) and calcium (Ca) in the dielectric layer may be inaccurate depending on whether BaTiO3 and / or (Ba,Ca)TiO3 can be used as the main components, the explanation will be based on the content added to the dielectric composition before firing. However, unless there are special circumstances, the detectable content in the dielectric layer after firing should not change.

[0057] In this case, the number of moles of the fourth minor element contained in the dielectric layer 111 relative to 100 moles of titanium (Ti) contained in the dielectric layer 111 may be between 3.0 moles and 6.0 moles, and if there are multiple fourth minor elements, it can be defined as the number of moles of the fourth minor element in the total number of moles of these elements combined.

[0058] In other words, for every 100 moles of titanium (Ti) contained in the dielectric layer 111, the number of moles of at least one of barium (Ba) and calcium (Ca) contained in the dielectric layer 111 can be said to be between 103.0 moles and 106.0 moles.

[0059] If the number of moles of the fourth minor component element contained in the dielectric layer 111 is less than 3.0 moles per 100 moles of titanium (Ti) contained in the dielectric layer 111, the dielectric properties may deteriorate. If the number of moles of the fourth minor component element contained in the dielectric layer 111 is more than 6.0 moles per 100 moles of titanium (Ti) contained in the dielectric layer 111, the dielectric properties or high-temperature withstand voltage may deteriorate.

[0060] e) Fifth subcomponent In one embodiment of the present invention, the dielectric layer 111 may contain a fifth minor component element, and the fifth minor component element may be silicon (Si).

[0061] The fifth minor component element can be at least one of silicon (Si) oxides, silicon (Si) carbonates, and silicon (Si)-containing glass, and can be added together with the main component raw materials before firing.

[0062] Silicon (Si), the fifth minor component element, can act as a sintering aid, induce grain growth in crystal grains, and improve insulation resistance (IR) or high-temperature reliability.

[0063] In this case, the number of moles of the fifth minor component element contained in the dielectric layer 111 relative to 100 moles of titanium (Ti) contained in the dielectric layer 111 may be 1.0 mole or more and 2.0 mole or less.

[0064] If the number of moles of the fifth minor component element contained in the dielectric layer 111 is less than 1.0 mole for every 100 moles of titanium (Ti) contained in the dielectric layer 111, sintering may not be sufficient or the dielectric constant at room temperature may decrease. If the number of moles of the fifth minor component element contained in the dielectric layer 111 exceeds 2.0 moles for every 100 moles of titanium (Ti) contained in the dielectric layer 111, the insulation resistance (IR) may decrease or the high-temperature reliability may decrease.

[0065] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and the side margin portions 114, 115 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer, the dielectric layer included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layer included in the side margin portions 114, 115 can be defined as the third dielectric layer.

[0066] Furthermore, the first to third dielectric layers can be formed using dielectric materials such as (Ba,Ca)TiO3 and / or BaTiO3, and therefore may include a dielectric microstructure after firing. The dielectric microstructure may include multiple crystal grains, grain boundaries arranged between adjacent crystal grains, and triple points located at points where three or more grain boundaries meet, and may include multiple crystal grains, grain boundaries, and triple points. In this case, the crystal grains may be (Ba,Ca)TiO3 and / or BaTiO3, etc., as the crystal lattice, and may be composed of the main component.

[0067] The dimension td of the dielectric layer 111 in the first direction does not need to be particularly limited.

[0068] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the dimension td of the dielectric layer 111 in the first direction may be 10.0 μm or less, 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, or 5.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the dimension td of the dielectric layer 111 in the first direction may be 4.0 μm or less, 3.5 μm or less, or 3.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the dimension td of the dielectric layer 111 in the first direction may be 2.0 μm or less or 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0069] Here, the dimension td of the dielectric layer 111 in the first direction can mean the dimension td of the dielectric layer 111 positioned between the first internal electrode 121 and the second internal electrode 122 in the first direction.

[0070] On the other hand, the dimension td of the dielectric layer 111 in the first direction can mean the dimension, distance, size, or length of the dielectric layer 111 in the first direction, or it can mean the thickness of the dielectric layer.

[0071] In this case, the dimension td of the dielectric layer 111 in the first direction may be a concept that includes the dimension td of at least one of the multiple dielectric layers 111 in the first direction, or it may be a concept that includes the dimension td of each of the dielectric layers 111 in the first direction.

[0072] Furthermore, the dimension td of the dielectric layer 111 in the first direction can mean the average dimension td of one dielectric layer 111 in the first direction, the average dimension td of each of multiple dielectric layers 111 in the first direction, or the average dimension td of multiple dielectric layers 111 in the first direction.

[0073] The average dimension td of the dielectric layer 111 in the first direction can be measured by scanning the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average dimension td of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction of one dielectric layer 111 in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this average value measurement to three dielectric layers 111 and measuring the average values, the average dimension td of multiple dielectric layers 111 in the first direction can be further generalized.

[0074] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0075] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, which are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0076] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 can be positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 can be positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0077] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically isolated from each other by the dielectric layer 111 placed in between.

[0078] On the other hand, the main body 110 can be formed by alternately stacking a first ceramic green sheet printed with a paste for the first internal electrode, which will become the first internal electrode 121, and a second ceramic green sheet printed with a paste for the second internal electrode, which will become the second internal electrode 122, and then firing them.

[0079] The materials forming the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may contain one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0080] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of the following onto a ceramic green sheet: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The printing method for the conductive paste for internal electrodes can be screen printing or gravure printing, but the present invention is not limited thereto.

[0081] Furthermore, the dimension te of the internal electrodes 121 and 122 in the first direction does not need to be particularly limited, and in the following description of the dimension te of the internal electrodes 121 and 122 in the first direction can refer to the dimension te of the first internal electrode 121 and the second internal electrode 122, respectively.

[0082] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the dimension te of the internal electrodes 121 and 122 in the first direction may be 3.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the dimension te of the internal electrodes 121 and 122 in the first direction may be 1.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the dimension te of the internal electrodes 121 and 122 in the first direction may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0083] In this case, the dimension te of the internal electrodes 121 and 122 in the first direction may be a concept that includes the dimension te of at least one of the multiple internal electrodes 121 and 122 in the first direction, or it may be a concept that includes the dimension te of all internal electrodes 121 and 122 in the first direction.

[0084] Here, the dimension te of the internal electrodes 121 and 122 in the first direction can mean the dimension, distance, size, or length of the internal electrodes 121 and 122 in the first direction, or it can mean the thickness of the internal electrodes 121 and 122.

[0085] At this time, the dimension te in the first direction of the internal electrodes 121 and 122 may be a concept including the dimension te in the first direction of at least one of the plurality of internal electrodes 121 and 122, or may be a concept including the dimension te in the first direction of each of all the internal electrodes 121 and 122.

[0086] Also, the dimension te in the first direction of the internal electrodes 121 and 122 can mean the average dimension te in the first direction of one of the internal electrodes 121 and 122, or can mean the average dimension te in the first direction of each of the plurality of internal electrodes 121 and 122, or can mean the average dimension te in the first direction of the plurality of internal electrodes 121 and 122.

[0087] The average dimension te in the first direction of the internal electrodes 121 and 122 can be measured by scanning an image of the cross-section in the first and second directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the first average dimension te of one of the internal electrodes 121 and 122 may be an average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction for one internal electrode in the scanned image. The five equally spaced points can be specified by the capacitance forming portion Ac. Also, when such average value measurement is extended to three internal electrodes 121 and 122 to measure the average value, the average dimension te in the first direction of the plurality of internal electrodes 121 and 122 can be further generalized.

[0088] On the other hand, in one embodiment of the present invention, the dimension td in the first direction of at least one of the plurality of dielectric layers 111 and the dimension te in the first direction of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0089] In other words, the dimension td in the first direction of one of the dielectric layers 111 may be even larger than twice the dimension te in the first direction of one of the internal electrodes 121 and 122. Preferably, the average dimension td in the first direction of the plurality of dielectric layers 111 may be even larger than twice the average dimension te in the first direction of the plurality of internal electrodes 121 and 122.

[0090] Generally, the main issue with high-voltage electrical components is reliability problems caused by a decrease in the breakdown voltage (BDV) under high-voltage environments.

[0091] Therefore, in order to prevent a decrease in dielectric breakdown voltage under high-voltage conditions, the dielectric breakdown voltage characteristics can be improved by making the average dimension td of the dielectric layer 111 in the first direction even larger than twice the average dimension te of the internal electrodes 121 and 122 in the first direction.

[0092] If the average dimension td of the dielectric layer 111 in the first direction is less than or equal to twice the average dimension te of the internal electrodes 121 and 122 in the first direction, the dielectric breakdown voltage may decrease, and a short circuit between the internal electrodes may occur.

[0093] On the other hand, the main body 110 may include cover portions 112 and 113 that are positioned on both end surfaces (end-surfaces) of the capacity forming portion Ac in the first direction.

[0094] Specifically, it may include a first cover portion 112 positioned on one side of the volume-forming portion Ac in the first direction and a second cover portion 113 positioned on the other side of the volume-forming portion Ac in the first direction. More specifically, for example, it may include a first cover portion 112 positioned at the bottom of the volume-forming portion Ac in the first direction and a second cover portion 113 positioned at the top of the volume-forming portion Ac in the first direction.

[0095] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in a first direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0096] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac. That is, the first cover portion 112 and the second cover portion 113 may contain a dielectric material, such as (Ba,Ca)TiO3 and / or BaTiO3.

[0097] Furthermore, the dimension tc of the cover portions 112 and 113 in the first direction does not need to be particularly limited, and in the following description of the dimension tc of the cover portions 112 and 113 in the first direction can refer to the dimension tc of the first cover portion 112 and the second cover portion 113, respectively.

[0098] However, in order to more easily achieve miniaturization and high capacity of the stacked electronic component 100, the dimension tc of the cover portions 112 and 113 in the first direction may be 100 μm or less, 90 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, or 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0099] Here, the dimension tc of the cover portions 112 and 113 in the first direction can mean the dimension of the cover portions 112 and 113 in the first direction.

[0100] Furthermore, the dimension tc of the cover portions 112 and 113 in the first direction may mean the average dimension tc of the first cover portion 112 and the second cover portion 113 in the first direction, or it may mean the average dimension tc of the first cover portion 112 and the second cover portion 113 in the first direction.

[0101] The average dimension tc of the cover portions 112 and 113 in the first direction can be measured by scanning the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the first direction at five equally spaced points in the second direction in an image scanned from one cover portion 112 or 113.

[0102] Furthermore, the average dimension tc of the cover portions 112 and 113 in the first direction, measured by the method described above, can be substantially the same as the average dimension of the cover portions 112 and 113 in the first direction in the cross-section of the main body 110 in the first and third directions.

[0103] On the other hand, the stacked electronic component 100 may include side margin regions 114' and 115', which are the third-direction edge regions of the internal electrodes 121 and 122.

[0104] More specifically, the side margin regions 114' and 115' may include a first side margin region 114' located between the internal electrodes 121 and 122 and the fifth surface 5, and a second side margin region 115' located between the internal electrodes 121 and 122 and the sixth surface 6.

[0105] As shown in the figure, the side margin regions 114' and 115' can refer to the regions between the interface between the first internal electrode 121 and the second internal electrode 122 in the third direction and the interface surface of the main body 110, with reference to the cross-sections of the main body 110 in the first and third directions.

[0106] The side margin regions 114' and 115' can be interpreted as the ceramic green sheet region excluding the internal electrodes 121 and 122 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume-forming portion Ac, excluding the areas that constitute the side margin regions 114' and 115'.

[0107] The side margin regions 114' and 115' essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0108] The first side margin region 114' and the second side margin region 115' do not include the internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111, for example, they may correspond to a part of the first dielectric layer 111. That is, the first side margin region 114' and the second side margin region 115' may contain dielectric material, for example, dielectric material such as (Ba,Ca)TiO3 and / or BaTiO3.

[0109] Furthermore, the third-direction dimension wm' of the side margin regions 114' and 115' does not need to be particularly limited, and in the following, the explanation of the third-direction dimension wm' of the side margin regions 114' and 115' can mean the third-direction dimension wm' of the first side margin region 114' and the second side margin region 115', respectively.

[0110] To more easily achieve miniaturization and increased capacitance of the stacked electronic component 100, the third-direction dimension wm' of the side margin regions 114' and 115' may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0111] Here, the third-direction dimension wm' of the side margin regions 114', 115' can mean the dimension, distance, size, or length of the side margin regions 114', 115' in the third direction, or it can mean the width of the side margin regions 114', 115'.

[0112] Furthermore, the third-direction dimension wm' of the side margin regions 114' and 115' can mean the average third-direction dimension wm' of the first side margin region 114' and the second side margin region 115', respectively, or it can mean the average third-direction dimension wm' of the first side margin region 114' and the second side margin region 115'.

[0113] The average dimension wm' in the third direction of the side margin regions 114' and 115' can be measured by scanning the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the third direction at five equally spaced points in the first direction in an image scanned from one side margin region 114', 115'.

[0114] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115 arranged on both end surfaces (end-surfaces) of the main body 110 in the third direction.

[0115] More specifically, the side margins 114 and 115 may include a first side margin 114 located on the fifth surface 5 of the main body 110 and a second side margin 115 located on the sixth surface 6 of the main body 110.

[0116] Except for the side margin portions 114 and 115 which are formed on the ceramic green sheet applied to the capacitance forming portion Ac, conductive paste is applied to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, the laminated internal electrodes 121 and 122 are cut so that they are exposed on the fifth surface 5 and sixth surface 6 of the main body 110, and then a single third dielectric layer or two or more third dielectric layers can be formed by arranging or laminating them in the third direction on both end surfaces (end-surfaces) of the capacitance forming portion Ac in the third direction.

[0117] The side margins 114 and 115 essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0118] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may contain dielectric material, such as (Ba,Ca)TiO3 and / or BaTiO3.

[0119] Furthermore, the dimension wm in the third direction of the side margin portions 114 and 115 does not need to be particularly limited, and in the following description of the dimension wm in the third direction of the side margin portions 114 and 115, it can refer to the dimension wm in the third direction of the first side margin portion 114 and the second side margin portion 115, respectively.

[0120] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component 100, the dimension wm of the side margin portions 114 and 115 in the third direction may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0121] Here, the third-direction dimension wm of the side margin portions 114 and 115 may mean the dimension, distance, size, or length of the side margin portions 114 and 115 in the third direction, or it may mean the width of the side margin portions 114 and 115.

[0122] Furthermore, the third-direction dimension wm of the side margin portions 114 and 115 may mean the average dimension wm of the third direction of the first side margin portion 114 and the second side margin portion 115, or it may mean the average dimension wm of the third direction of the first side margin portion 114 and the second side margin portion 115.

[0123] The average dimension wm of the side margins 114 and 115 in the third direction can be measured by scanning the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the dimension in the third direction at five equally spaced points in the first direction in an image scanned from one side margin 114 or 115.

[0124] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed depending on the form of the internal electrodes 121 and 122 and other purposes.

[0125] The external electrodes 131 and 132 are positioned on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0126] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are arranged on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and connected to a first internal electrode 121 and a second internal electrode 122, respectively. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0127] Furthermore, the external electrodes 131 and 132 may be arranged extending over parts of the first surface 1 and the second surface 2 of the main body 110, or extending over parts of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body 110 and parts of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and parts of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110.

[0128] The external electrodes 131 and 132 can be formed using any material that has electrical conductivity, such as metal, and the specific material can be determined by considering electrical properties, structural stability, etc. Furthermore, they can have a multilayer structure.

[0129] For example, the external electrodes 131 and 132 may include first electrode layers 131a and 132a placed on the main body 110, and second electrode layers 131b and 132b placed on the first electrode layers 131a and 132a. Furthermore, they may include third electrode layers 131c and 132c placed on the second electrode layers 131b and 132b.

[0130] Here, it is preferable that the first to third electrode layers are layers that are distinct from each other. However, this is not particularly limited, and they may be divided according to the order of the manufacturing process, and at least some of the first to third electrode layers may not be distinguishable from each other and may be observed as a single layer.

[0131] In this invention, "distinguished" can mean, but is not limited to, two layers being distinguishable by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, by differences in components determined by energy-dispersive X-ray spectroscopy (EDS) analysis using equipment such as a scanning electron microscope (SEM).

[0132] The first electrode layers 131a, 132a and the second electrode layers 131b, 132b may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 in a conductive paste for external electrodes containing a conductive metal, but are not particularly limited thereto.

[0133] To give a more specific example for the electrode layers 131a, 132a, 131b, and 132b, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b.

[0134] More specifically, the external electrodes 131 and 132 may include first electrode layers 131a and 132a comprising a first conductive metal and glass, and second electrode layers 131b and 132b comprising a second conductive metal and resin, which are distinguished from the first electrode layers 131a and 132a and disposed on the first electrode layers 131a and 132a.

[0135] The conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b can be a material with excellent electrical conductivity. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0136] Here, the conductive metal contained in the first electrode layers 131a and 132a can be referred to as the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be referred to as the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same or different from each other, and if multiple conductive metals are included, only some of the conductive metals may be the same, but the invention is not particularly limited thereto.

[0137] The glass contained in the first electrode layers 131a and 132a can improve the bonding with the main body 110, and the resin contained in the second electrode layers 131b and 132b can improve the warp resistance.

[0138] The first conductive metal contained in the first electrode layers 131a and 132a can serve to electrically connect with the internal electrodes 121 and 122.

[0139] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0140] The second conductive metal contained in the second electrode layers 131b and 132b can serve to electrically connect with the first electrode layers 131a and 132a.

[0141] The second conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0142] The second conductive metal contained in the second electrode layers 131b and 132b may include at least one of spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, only of spherical particles, or in a mixed form of flake-shaped and spherical particles.

[0143] Here, spherical particles may include forms that are not perfectly spherical, for example, forms with a ratio of the length of the major axis to the minor axis (major axis / minor axis) of 1.45 or less. Flake-like particles mean particles having a flat and elongated shape, and are not particularly limited, but for example, the ratio of the length of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more. The lengths of the major axis and minor axis of the above spherical particles and flake-like particles can be measured from images obtained by scanning the cross-sections in the first and second directions, which are cut in the center of the width direction of the stacked electronic component, with a scanning electron microscope (SEM).

[0144] The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it can perform the role of ensuring bonding and shock absorption and can be mixed with the second conductive metal particles to form a paste, for example, it can include epoxy resins.

[0145] Furthermore, the second electrode layers 131b and 132b may contain an intermetallic compound.

[0146] The inclusion of an intermetallic compound can further improve the electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound plays a role in improving electrical connectivity by linking multiple second conductive metal particles, and can also play a role in surrounding and connecting multiple second conductive metal particles to one another.

[0147] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, and forms an intermetallic compound with some of the metal particles, surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal of 300°C or less. More specifically, for example, it may include tin (Sn) having a melting point of 213-220°C. During the drying and curing process, the tin (Sn) melts, and the molten tin (Sn) moistens high-melting-point metal particles such as silver (Ag), nickel (Ni), or copper (Cu) by capillary action, reacting with some of the silver (Ag), nickel (Ni), or copper (Cu) metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Silver (Ag), nickel (Ni), or copper (Cu) that are not involved in the reaction may remain in the form of metal particles.

[0148] Therefore, the multiple second conductive metal particles may include at least one of silver (Ag), nickel (Ni), and copper (Cu), and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0149] The third electrode layers 131c and 132c can play a role in improving mounting characteristics, and may be plated layers formed on the second electrode layers 131b and 132b by a plating method, but are not particularly limited thereto.

[0150] The types of the third electrode layers 131c and 132c are not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0151] The third electrode layers 131c and 132c may be a single layer or multiple layers.

[0152] More specifically, for example, the third electrode layers 131c and 132c may be nickel (Ni) electrode layers or tin (Sn) electrode layers, and may be configured such that nickel (Ni) electrode layers and tin (Sn) electrode layers are formed sequentially on the second electrode layers 131b and 132b, or may be configured such that tin (Sn) electrode layers, nickel (Ni) electrode layers, and tin (Sn) electrode layers are formed sequentially. Furthermore, the electrode layers 131c and 132c may include multiple nickel (Ni) electrode layers and / or multiple tin (Sn) electrode layers.

[0153] There is no particular limit to the size of the stacked electronic component 100.

[0154] However, in order to improve reliability in high-temperature and high-voltage environments, the effects of the present invention can be more pronounced in multilayer electronic components 100 of size 1608 (length × width: 1.6 mm × 0.8 mm, with length and width satisfying an error of ±10%) or larger. On the other hand, in order to achieve miniaturization and high capacitance simultaneously, the thickness of the dielectric layer and internal electrodes must be reduced and the number of layers increased, so the effects of the present invention can be more pronounced in multilayer electronic components 100 of size 1608 (length × width: 1.6 mm × 0.8 mm, with length and width satisfying an error of ±10%) or smaller.

[0155] In the following, a stacked electronic component 100 according to one embodiment of the present invention will be described in more detail.

[0156] Furthermore, in the present invention, the term "secondary phase" can mean particles, crystal grains, oxides, or segregation having a different composition or crystal lattice than the main component, perovskite (ABO3)-based material, particles, or crystal grains, and can also mean an aggregate of components that do not solid-solve in the crystal grains, but is not particularly limited thereto.

[0157] In one embodiment of the present invention, when the first secondary phase 141 is a secondary phase containing calcium (Ca) and titanium (Ti) and having an atomic percentage of rare earth elements of 0.1 at% or more, the dielectric layer 111 can include the first secondary phase 141. In this case, with respect to the area of ​​the capacitance forming portion Ac, excluding the internal electrodes, the lower limit of the area percentage of the first secondary phase 141 included in the dielectric layer 111 may be greater than 0%, 0.2% or more, or 1.26% or more, and the upper limit may be less than 4.58%, 4.0% or less, or 2.94% or less. Here, the first secondary phase 141 may be an oxide containing oxygen (O), but is not particularly limited thereto, and may have a crystalline structure or be amorphous.

[0158] In this case, the first secondary phase 141 may include at least one of the first-first secondary phase 141-1 having an atomic percentage of silicon (Si) of 1 at% or more, and the first-second secondary phase 141-2 having an atomic percentage of silicon (Si) of 0 at% or more and less than 1 at%. In other words, the first secondary phase 141 may include the first-first secondary phase 141-1 further containing silicon (Si), and the first-second secondary phase 141-2 substantially free of silicon (Si). Here, the first-first secondary phase 141-1 may be amorphous and not have a fixed shape, and the first-second secondary phase 141-2 may have a fixed shape such as a polygon (e.g., a facet), but is not particularly limited thereto.

[0159] More specifically, in the first secondary phase 141, when the total number of atoms of all elements is set to 100 at%, calcium (Ca) may be 2.0 at% to 10.0 at%, titanium (Ti) may be 5.0 at% to 25.0 at%, and rare earth elements may be 0.1 at% to 30.0 at%. In this case, the ratio of the atomic percentage of rare earth elements to the atomic percentage of calcium (Ca) is preferably 3.0 or higher, but is not particularly limited thereto.

[0160] Furthermore, the first-1 secondary phase 141-1 of the first secondary phase 141 may have an atomic percentage of silicon (Si) of 1.0 at% or more and 10.0 at% or less, and the first-2 secondary phase 141-2 of the first secondary phase 141 may have an atomic percentage of silicon (Si) of 0 at% or more and less than 1.0 at%. In other words, the first-2 secondary phase 141-2 may not contain silicon (Si) (when the atomic percentage of Si is 0 at%), or it may contain silicon at a noise level of less than 1 at% (when the atomic percentage of Si is greater than 0 at% and less than 1 at%).

[0161] Furthermore, the rare earth elements contained in the first secondary phase 141 may be the same as the rare earth elements contained in the dielectric layer 111, and may include, but are not limited to, at least one of yttrium (Y), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd).

[0162] More specifically, with reference to one embodiment of the present invention, Figure 7(a) is an image of a cross-section of the dielectric layer of one embodiment of the present invention taken via a scanning transmission electron microscope (STEM), Figure 7(b) is an image of silicon (Si) mapped to the same region by energy-dispersive X-ray spectroscopy (EDS), and Figure 7(c) is an image of rare earth elements (RE) mapped to the same region by energy-dispersive X-ray spectroscopy (EDS). The first-first secondary phase 141-1 did not have a fixed shape, and the atomic percentage of silicon (Si) was detected at 1 at% or more, while the first-secondary phase 141-2 showed a polygonal shape, and the atomic percentage of silicon (Si) was detected at less than 1 at%. In both the first-first secondary phase 141-1 and the first-secondary phase 141-2, the atomic percentage of yttrium (Y), a rare earth element, was detected at 0.1 at% or more. Although separate EDS analysis images for calcium (Ca) and titanium (Ti) were not attached, both the 1-1 and 1-2 secondary phases 141-1 and 141-2 contained calcium (Ca) and titanium (Ti).

[0163] Using the cross-sectional area of ​​the capacitance-forming portion Ac as a reference, the area percentage of the first secondary phase 141 contained in the dielectric layer 111, excluding the internal electrodes, must be between 0% and 4.58% to achieve excellent high-temperature reliability.

[0164] If the area percentage of the first secondary phase 141 contained in the dielectric layer 111 is 4.58% or more relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming portion Ac, then high-temperature reliability may be poor.

[0165] Using the cross-sectional area of ​​the capacitance-forming portion Ac as a reference, the area percentage of the first secondary phase 141 contained in the dielectric layer 111 relative to the area excluding the internal electrodes can be determined by the following method, but is not limited thereto. First, at the center of the main body 100 in the third direction, an 8 μm × 8 μm cross-sectional area within the capacitance-forming portion Ac is imaged using a scanning transmission electron microscope (STEM, SEM, TEM) or the like. Then, various elements are detected by EDS analysis to classify the internal electrodes 121, 122, the dielectric layer 111, and / or the first secondary phase 141. For example, the main component elements (e.g., nickel (Ni)) of the internal electrodes 121 and 122 are mapped to classify the internal electrodes 121 and 122 within the 8 μm × 8 μm cross-sectional area of ​​the capacitance-forming portion Ac. Here, the area remaining after removing the internal electrodes 121 and 122 can correspond to the dielectric layer 111, but is not particularly limited to this. Then, by mapping rare earth elements, calcium (Ca), silicon (Si), and titanium (Ti), the region within the dielectric layer 111 that simultaneously contains rare earth elements, calcium (Ca), and titanium (Ti) is classified as the first secondary phase 141 (for specific criteria for the atomic percentage of each element, refer to the elemental content of the first secondary phase 141 described above). In this case, within the first secondary phase 141, if the atomic percentage of silicon (Si) is 0.1 at% or more, it is classified as the 1-1 secondary phase 141-1, and if the atomic percentage of silicon (Si) is 0 at% or more and less than 0.1 at%, it can be classified as the 1-2 secondary phase 141-2. After this, the area of ​​the first secondary phase 141, which has been classified via a program built into the scanning transmission electron microscope (STEM) (including other external programs such as "Image J" and "Image Pro Plus"), can be measured. Then, using the 8 μm × 8 μm cross-sectional area of ​​the capacitance forming section Ac as a reference, the area of ​​the first secondary phase 141 can be calculated as a percentage of the area excluding the internal electrodes 121 and 122.

[0166] More specifically, for example, Figure 9(a) is an image of the cross-section of the capacitance-forming section of Test Example 9, described later, taken via a transmission electron microscope (TEM); Figure 9(b) is an image of the same region as in Figure 9(a) mapped with elements using energy-dispersive X-ray spectroscopy (EDS); and Figure 9(c) shows the same region as in Figure 9(a) after selecting the region where the primary secondary phase is distributed in the dielectric layer using a program built into the transmission electron microscope (TEM). Based on the cross-sectional area of ​​the capacitance-forming section Ac, the area percentage of the primary secondary phase was observed to be 4.58% of the area excluding the internal electrodes 121 and 122.

[0167] Figure 9(d) is an image of the cross-section of the capacitance-forming portion of Test Example 1, described later, taken using a transmission electron microscope (TEM). Figure 9(e) is an image of the same region as in Figure 9(d) mapped to elements using energy-dispersive X-ray spectroscopy (EDS). Figure 9(f) shows the same region as in Figure 9(d) after selecting the region where the primary secondary phase is distributed in the dielectric layer using a program built into the transmission electron microscope (TEM). Based on the cross-sectional area of ​​the capacitance-forming portion Ac, the area percentage of the primary secondary phase was observed to be 1.33% of the area excluding the internal electrodes 121 and 122.

[0168] In one embodiment of the present invention, when the secondary phase 142 is defined as a secondary phase containing calcium (Ca), silicon (Si), and titanium (Ti), with an atomic percentage of rare earth elements of 0 at% or more and less than 0.1 at%, the area percentage of the secondary phase 142 contained in the dielectric layer 111 relative to the area excluding the internal electrodes 121 and 122, with respect to the cross-sectional area of ​​the capacitance forming portion Ac, has a lower limit of 0% or more or 0.05% or more, and an upper limit of less than 0.1%. That is, the dielectric layer 111 may not contain the secondary phase 142 (when the area percentage of the secondary phase is 0%), or it may contain it at a trace level of 0.05% or more and less than 0.1% (when the area percentage of the secondary phase is greater than 0.05% and less than 0.1%). Here, the secondary phase 142 may be an oxide containing oxygen (O), but is not particularly limited thereto, and may be amorphous.

[0169] More specifically, when the total number of atoms of all elements in the secondary phase 142 is set to 100 at%, calcium (Ca) may be between 0.5 at% and 10.0 at%, silicon (Si) may be between 1.0 at% and 10.0 at%, titanium (Ti) may be between 5.0 at% and 15.0 at%, and rare earth elements may be between 0 at% and 0.1 at%. In other words, the secondary phase 142 may not contain rare earth elements (when the atomic percentage of rare earth elements is 0 at%), or it may contain them at a noise level of less than 0.1 at% (when the atomic percentage of rare earth elements is greater than 0 at% but less than 0.1 at%).

[0170] Based on the cross-sectional area of ​​the capacitance-forming portion Ac, the area percentage of the second secondary phase 141 contained in the dielectric layer 111 is 0% or more and less than 0.1% relative to the area excluding the internal electrodes 121 and 122, thereby satisfying the target TCC characteristics, such as the X8R characteristics. Here, the X8R characteristics refer to the capacitance (C) at 25°C. @25℃ Based on this, it can be said that the characteristic is that the capacitance change rate (ΔC) between -55℃ and 150℃ satisfies the requirement of -15% or more and 15% or less (X8R = ΔC / C between -55℃ and +150℃) @25℃≤±15%).

[0171] If the area percentage of the second secondary phase 141 contained in the dielectric layer 111 is 0.1% or more relative to the area excluding the internal electrodes 121 and 122, based on the cross-sectional area of ​​the capacitance forming part Ac, the target TCC characteristics, such as the X8R characteristics, may not be met. More specifically, the capacitance change rate (ΔC) at 150°C may be greater than the capacitance (C) at 25°C. @25℃ It can exceed +15% against ).

[0172] Using the cross-sectional area of ​​the capacitance-forming portion Ac as a reference, the area percentage of the second secondary phase 142 contained in the dielectric layer 111 relative to the area excluding the internal electrodes 121 and 122 is the same as the method for determining the area percentage of the first secondary phase 141 contained in the dielectric layer 111 relative to the area excluding the internal electrodes 121 and 122, using the cross-sectional area of ​​the capacitance-forming portion Ac as a reference, and is therefore omitted. The method for classifying the second secondary phase 142 is to map calcium (Ca), silicon (Si), and titanium (Ti) via EDS analysis and classify regions in the dielectric layer 111 that simultaneously contain calcium (Ca), silicon (Si), and titanium (Ti) as the second secondary phase 142 (for specific criteria for the atomic percentage of each element, refer to the elemental content of the second secondary phase 142 described above).

[0173] The observation method for the first secondary phase 141 and the second secondary phase 142 will be described more specifically with reference to one embodiment of the present invention. Figure 8(a) is an image obtained by mapping silicon (Si) using energy-dispersive X-ray spectroscopy (EDS) after taking a cross-section of the dielectric layer of another embodiment of the present invention using a scanning transmission electron microscope (STEM), and Figure 8(b) is an image obtained by mapping rare earth elements (RE) using energy-dispersive X-ray spectroscopy (EDS) to the same region. In the above observation region, the first secondary phase 141 contains all silicon (Si) and the rare earth element (RE) yttrium (Y), while the second secondary phase 142 contains silicon (Si). Although separate EDS analysis images for calcium (Ca) and titanium (Ti) are not attached, both the first secondary phase 141 and the second secondary phase 142 contain calcium (Ca) and titanium (Ti).

[0174] The present invention will be described in more detail below through test examples, but these are intended to aid in a concrete understanding of the invention and do not limit the scope of the present invention.

[0175] (Example test) Table 1 below shows the TCC characteristics and high-temperature accelerated lifetime evaluation based on the area percentage of the primary secondary phase and the presence or absence of the secondary secondary phase.

[0176] The main component base material for Test Examples 1 to 13 is one in which the average particle size of the base material powder particles is 200 nm (Ba 1-x Ca x TiO3 (x=0.07) and BaTiO3 powder were used together. Zirconia beads were used as a mixing / dispersion medium, and the main component (Ba 1-x Ca xTiO3 (x=0.07) and BaTiO3 powders, along with raw material powders containing auxiliary components corresponding to the compositions specified in each test example described below, were mixed with ethanol / toluene solvent and a dispersant and milled for 12 hours. After binder mixing, an additional 12 hours of milling was performed. A molded sheet with a thickness of 5.1 μm was produced using the slurry thus manufactured and a sheet manufacturing machine. Next, nickel (Ni) internal electrodes were printed on the molded sheet. The upper and lower cover sections were manufactured by laminating the above-mentioned molded sheet in 15 layers, and the volume-forming section was manufactured by laminating the above-mentioned molded sheet in 140 layers. That is, the laminated lower cover section, volume-forming section, and upper cover section were laminated to produce a bar, and the bar was pressed to produce a crimped bar. The crimped bar was cut into 1608 (length × width: 1.6 mm × 0.8 mm) size chips using a cutting machine. After the fabrication of the 1608-size MLCC chips was completed, they underwent calcination, then fired in a reducing atmosphere of 1.5%H2 / 98.5%N2~3.0%H2 / 97.0%N2 (H2O / H2 / N2 atmosphere, corresponding to EMF 574mV~731mV) at a temperature of 1250℃~1350℃ for a holding time of 1.5 hours~3 hours, followed by re-oxidation and firing in an N2 atmosphere at 1050℃~1100℃ for 3 hours. Subsequently, the fired chips underwent a termination process with copper (Cu) paste and external electrode firing to complete the external electrodes. As a result, a 1608-size MLCC chip was fabricated with a dielectric layer thickness of approximately 3.5 μm and 140 dielectric layers in the capacitance formation section.

[0177] Test Examples 1 to 8 show the main component of the dielectric layer (Ba 1-x Ca xThe following conditions were met for TiO3 (x=0.07) and BaTiO3: the total content of the first minor element Mn and V was 0.35 mol (Mn 0.15 mol, V 0.20 mol), the content of the second minor element Mg was 0.5 mol, the content of the third minor element, a rare earth element, was 5.5 mol, the total content of the fourth minor element Ba and Ca was 4.5 mol (Ba 3.5 mol, Ca 1.0 mol), and the content of the fifth minor element Si was 1.4 mol. Test Examples 1 to 8 used Y, Sm, Dy, Tb, Ho, Er, Gd, and Yb as the third minor element, a rare earth element.

[0178] In Test Examples 9 to 11, Y was added as a rare earth element, which is the third minor component element. The main component and the remaining minor component elements were prepared in the same manner as in Test Examples 1 to 8. In order to produce Test Examples 9 to 11 with different area percentages of the primary secondary phase or secondary secondary phase, the firing time was the same as in Test Examples 1 to 8, but a different firing atmosphere was applied.

[0179] In Test Examples 12 and 13, Y was added as a rare earth element, which is the third minor component element, and the main component and the remaining minor components were prepared in the same manner as in Test Examples 1 to 8. In order to prepare Test Examples 11 to 13 so that the area percentage of the primary secondary phase or the area percentage of the secondary phase were different, the firing atmosphere was the same as in Test Examples 1 to 8, but the firing time was changed.

[0180] In Table 1 below, the percentage of the first secondary phase area (%) is recorded by observing the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes, based on the 8 μm × 8 μm (first direction × second direction) cross-sectional area of ​​the capacitance forming portion.

[0181] The presence or absence of a secondary phase was determined by observing the area percentage of the secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes, based on the 8 μm × 8 μm (first direction × second direction) cross-sectional area of ​​the capacitance-forming portion. The observation area for the secondary phase was the same as the observation area for the primary phase. If the area percentage of the secondary phase was 0% or more and less than 1%, it was evaluated as not containing a secondary phase and indicated with "X". If the area percentage of the secondary phase was 1% or more, it was evaluated as containing a secondary phase and indicated with "O".

[0182] The capacitance change rate (ΔC) is the capacitance (C) at 25°C. @25℃ The capacitance change rate at -55℃ (ΔC@-55℃) and 150℃ (ΔC@150℃) was measured and recorded based on the reference value. If the capacitance change rate (ΔC) is between -15% and 15%, it was evaluated as meeting the target TCC characteristic, the X8R characteristic.

[0183] MTTF(hrs) refers to the Mean Time to Failure (MTTF), which is the average time between failures during a Highly Accelerated Life Time Test (HALT). In the HALT test, 40 sample chips were subjected to a voltage of 75V at 175°C. Products with an MTTF of 75 hours or more were evaluated as good products, and those with an MTTF of less than 75 hours were evaluated as defective products.

[0184] [Table 1]

[0185] In all eight test examples (1 to 8), the area percentage of the primary secondary phase contained in the dielectric layer was observed to be less than 4.58% of the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming portion. The area percentage of the secondary secondary phase contained in the dielectric layer was observed to be between 0% and less than 1% of the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming portion (including cases where the secondary secondary phase was not observed). The X8R characteristics were met, and in the accelerated lifetime evaluation, the MTTF was 75 hours or more in all cases, resulting in them being evaluated as good products.

[0186] In Test Example 9, the area percentage of the first secondary phase contained in the dielectric layer was observed to be 4.58% relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming section. The area percentage of the second secondary phase contained in the dielectric layer was observed to be between 0% and less than 1%, based on the cross-sectional area of ​​the capacitance-forming section. This did not satisfy the X8R characteristics, and the accelerated lifetime evaluation showed an MTTF of 62.2 hours, resulting in a rating of "defective." In Test Example 10, the area percentage of the first secondary phase contained in the dielectric layer was observed to be 1.28% relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming section. The area percentage of the second secondary phase contained in the dielectric layer was observed to be between 0% and less than 1%, based on the cross-sectional area of ​​the capacitance-forming section. This satisfied the X8R characteristics, and the accelerated lifetime evaluation showed an MTTF of 75.9 hours, resulting in a rating of "good product." In Test Example 11, the area percentage of the first secondary phase contained in the dielectric layer was observed to be 2.33% relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming portion. The area percentage of the second secondary phase contained in the dielectric layer was observed to be 1% or more relative to the area excluding the internal electrodes, based on the cross-sectional area of ​​the capacitance-forming portion. Although the X8R characteristics were not met, the accelerated lifetime evaluation was 103.7 hours, and it was evaluated as a good product.

[0187] In Test Example 12, based on the cross-sectional area of ​​the capacitance-forming portion, the area percentage of the first secondary phase contained in the dielectric layer was observed to be 1.98% relative to the area excluding the internal electrodes, and the area percentage of the second secondary phase was observed to be 1% or more. Although the X8R characteristics were not met, the accelerated lifetime evaluation showed an MTTF of 92.5 hours, and it was evaluated as a good product. In Test Example 13, based on the cross-sectional area of ​​the capacitance-forming portion, the area percentage of the first secondary phase contained in the dielectric layer was observed to be 2.64% relative to the area excluding the internal electrodes, and the area percentage of the second secondary phase was observed to be 1% or more. Although the X8R characteristics were not met, the accelerated lifetime evaluation showed an MTTF of 103.7 hours, and it was evaluated as a good product.

[0188] Figure 9(a) is an image of the cross-section of the capacitance-forming area of ​​Test Example 9, taken using a transmission electron microscope (TEM). Figure 9(b) is an image of the same region as in Figure 9(a) mapped to elements using energy-dispersive X-ray spectroscopy (EDS). Figure 9(c) shows the same region as in Figure 9(a) after selecting the region where the primary secondary phase is distributed in the dielectric layer using a program built into the transmission electron microscope (TEM). Based on the cross-sectional area of ​​the capacitance-forming area, the area percentage of the primary secondary phase contained in the dielectric layer, excluding the internal electrodes, was observed to be 4.58%.

[0189] Figure 9(d) is an image of the cross-section of the capacitance-forming area of ​​Test Example 1, taken using a transmission electron microscope (TEM); Figure 9(e) is an image of the same region as in Figure 9(d) mapped to elements using energy-dispersive X-ray spectroscopy (EDS); and Figure 9(f) shows the same region as in Figure 9(d) after selecting the region where the primary secondary phase is distributed in the dielectric layer using a program built into the transmission electron microscope (TEM). Based on the cross-sectional area of ​​the capacitance-forming area, the area percentage of the primary secondary phase contained in the dielectric layer, excluding the internal electrodes, was observed to be 1.33%.

[0190] Although embodiments and test examples of the present invention have been described in detail above, the present invention is not limited by the embodiments and accompanying drawings described above, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0191] Furthermore, the term "embodiment" as used in this invention does not mean that each embodiment is identical to the others, but rather is provided to emphasize and describe the unique and distinct characteristics of each embodiment. However, the embodiments presented above do not preclude their implementation in combination with the features of other embodiments. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, as long as there is no description in the other embodiment that contradicts or is contrary to that matter.

[0192] The terms used in this invention are used merely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless they clearly mean something different in context. [Explanation of Symbols]

[0193] 100 Stacked Electronic Components 110 Main Unit 111 Dielectric layer 112, 113 Cover section 114', 115' Side margin area 114, 115 Side margin section 121, 122 Internal electrode 131, 132 External electrode 141, 142 1st secondary phase, 2nd secondary phase 141-1, 141-2 1st-1 secondary phase, 1-2 secondary phase

Claims

1. The main component is (Ba, Ca)TiO ３ and BaTiO ３ A body including a dielectric layer and a capacitance forming section including internal electrodes arranged alternately with the dielectric layer, The body includes an external electrode disposed on the main body, When the first secondary phase is a secondary phase containing calcium (Ca) and titanium (Ti) and having an atomic percentage of rare earth elements of 0.1 at% or more, the dielectric layer includes the first secondary phase. A multilayer electronic component in which, with respect to the cross-sectional area of ​​the capacitance-forming portion, the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is greater than 0% and less than 4.58%.

2. When a secondary phase containing calcium (Ca), silicon (Si), and titanium (Ti), and in which the atomic percentage of rare earth elements is 0 at% or more and less than 0.1 at%, is defined as the secondary phase, The stacked electronic component according to claim 1, wherein, with respect to the cross-sectional area of ​​the capacitance forming portion, the area percentage of the second secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is 0% or more and less than 0.1%.

3. The dielectric layer includes the second secondary phase, The laminated electronic component according to claim 2, wherein, with respect to the cross-sectional area of ​​the capacitance forming portion, the area percentage of the second secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is 0.05% or more and less than 0.1%.

4. The laminated electronic component according to claim 2, wherein, with respect to the cross-sectional area of ​​the capacitance forming portion, the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is 1.26% or more and 2.94% or less.

5. The stacked electronic component according to claim 1, wherein the first secondary phase includes at least one of a first-first secondary phase having an atomic percentage of silicon (Si) of 1.0 at% or more and a first-second secondary phase having an atomic percentage of silicon (Si) of 0 at% or more and less than 1.0 at%.

6. The dielectric layer contains a first minor element comprising at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn). The stacked electronic component according to any one of claims 1 to 5, wherein the number of moles of the first minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 0.1 moles or more and 1.0 mole or less.

7. The dielectric layer contains a second minor element including magnesium (Mg), The laminated electronic component according to any one of claims 1 to 5, wherein the number of moles of the second minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 0.2 moles or more and 0.4 moles or less.

8. The dielectric layer contains a third minor element including a rare earth element, The laminated electronic component according to any one of claims 1 to 5, wherein the number of moles of the third minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 4.0 moles or more and 7.0 moles or less.

9. The dielectric layer further contains a fourth minor component element comprising at least one of barium (Ba) and calcium (Ca) as a minor component additive. The multilayer electronic component according to any one of claims 1 to 5, wherein the number of moles of the fourth minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 3.0 moles or more and 6.0 moles or less.

10. The dielectric layer contains a fifth minor element including silicon (Si), The stacked electronic component according to any one of claims 1 to 5, wherein the number of moles of the fifth minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 1.0 mole or more and 2.0 mole or less.

11. The main component is (Ba, Ca)TiO ３ and BaTiO ３ It consists of, The (Ba, Ca)TiO ３ :BaTiO ３ The multilayer electronic component according to any one of claims 1 to 5, wherein the molar ratio satisfies 10:90 to 90:

10.

12. A body including a dielectric layer and a capacitance forming section including internal electrodes arranged alternately with the dielectric layer, The body includes an external electrode disposed on the main body, When a secondary phase containing calcium (Ca) and titanium (Ti) with an atomic percentage of rare earth elements of 0.1 at% or more is defined as the first secondary phase, and a secondary phase containing calcium (Ca), silicon (Si), and titanium (Ti) with an atomic percentage of rare earth elements of 0 at% or more and less than 0.1 at% is defined as the second secondary phase, The dielectric layer includes the first secondary phase and the second secondary phase, With respect to the cross-sectional area of ​​the capacitance forming portion, the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is greater than 0% and less than 4.58%. A multilayer electronic component in which, with respect to the cross-sectional area of ​​the capacitance-forming portion, the area percentage of the second secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is 0.05% or more and less than 0.1%.

13. The laminated electronic component according to claim 12, wherein, with respect to the cross-sectional area of ​​the capacitance forming portion, the area percentage of the first secondary phase contained in the dielectric layer relative to the area excluding the internal electrodes is 1.26% or more and 2.94% or less.

14. The stacked electronic component according to claim 12, wherein the first secondary phase includes at least one of a first-first secondary phase having an atomic percentage of silicon (Si) of 1.0 at% or more and a first-second secondary phase having an atomic percentage of silicon (Si) of 0 at% or more and less than 1.0 at%.

15. The dielectric layer contains a first minor element comprising at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn). The laminated electronic component according to any one of claims 12 to 14, wherein the number of moles of the first minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 0.1 moles or more and 1.0 mole or less.

16. The dielectric layer contains a second minor element including magnesium (Mg), The stacked electronic component according to any one of claims 12 to 14, wherein the number of moles of the second minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 0.2 moles or more and 0.4 moles or less.

17. The dielectric layer contains a third minor element including a rare earth element, The stacked electronic component according to any one of claims 12 to 14, wherein the number of moles of the third minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 4.0 moles or more and 7.0 moles or less.

18. The dielectric layer contains a fourth minor component element comprising at least one of barium (Ba) and calcium (Ca) as a minor component additive. The stacked electronic component according to any one of claims 12 to 14, wherein the number of moles of the fourth minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 3.0 moles or more and 6.0 moles or less.

19. The dielectric layer contains a fifth minor element including silicon (Si), The stacked electronic component according to any one of claims 12 to 14, wherein the number of moles of the fifth minor component element contained in the dielectric layer relative to 100 moles of titanium (Ti) contained in the dielectric layer is 1.0 mole or more and 2.0 mole or less.

20. The dielectric layer has (Ba,Ca)TiO as its main component. ３ and BaTiO ３ Includes, The above-mentioned (Ba, Ca)TiO ３ : BaTiO ３ The laminated electronic component according to any one of claims 12 to 14, wherein the molar ratio thereof satisfies 10:90 to 90:10.

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