Substrate processing apparatus, film deposition system, control method, and method for manufacturing electronic devices

Abstract

The electrostatic chuck is used to attract the substrate according to its charge state. [Solution] The substrate processing apparatus comprises an electrostatic chuck for adsorbing a substrate to be deposited on, a detection means for detecting the behavior of the substrate when adsorption by the electrostatic chuck is released, and a control means for setting the driving conditions of the electrostatic chuck based on the detection result of the detection means.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a film forming system, a control method, and a method for manufacturing an electronic device.

Background Art

[0002] There is known a film forming apparatus that adsorbs a substrate to an electrostatic chuck and performs a film forming process on the adsorbed substrate (Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Through processes such as the peeling operation of the mask and the substrate, the substrate may become charged. If the degree of charging of the substrate is strong, the adsorption force of the substrate by the electrostatic chuck may become too strong, and an excessive load may be applied to the substrate.

[0005] The present invention provides a technique capable of performing adsorption by an electrostatic chuck according to the charged state of a substrate.

Means for Solving the Problems

[0006] According to the present invention, an electrostatic chuck that adsorbs a substrate to be film formed, detection means for detecting the behavior of the substrate when the adsorption by the electrostatic chuck is released, control means for setting driving conditions of the electrostatic chuck based on a detection result of the detection means, are provided. There is provided a substrate processing apparatus characterized by this.

Effects of the Invention

[0007] According to the present invention, it is possible to provide a technology that enables adsorption by an electrostatic chuck according to the charge state of the substrate. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic diagram of a film deposition system according to one embodiment of the present invention. [Figure 2] A schematic diagram of a film deposition apparatus according to one embodiment. [Figure 3] Diagram illustrating the circuit board support unit and electrostatic chuck. [Figure 4] A flowchart illustrating an example of the processing steps in the control system of a film deposition apparatus. [Figure 5] Operational diagram of the film deposition apparatus. [Figure 6] A diagram illustrating an example of substrate behavior during detachment. [Figure 7] This figure shows the relationship between the vibration frequency of the substrate and the amount of charge on the substrate when the adsorption is released. [Figure 8] A flowchart illustrating an example of the processing steps in the control system of a film deposition apparatus. [Figure 9] A diagram showing an example of the driving conditions for an electrostatic chuck. [Figure 10] A schematic diagram of a measuring device according to one embodiment. [Figure 11] Diagram illustrating film thickness measurement. [Figure 12] Perspective view of an electrostatic chuck. [Figure 13] Perspective view of the substrate support unit and measurement unit. [Figure 14] A flowchart illustrating an example of processing performed by the control device of a measuring instrument. [Figure 15] Operational diagram of the film deposition apparatus. [Figure 16] Operational diagram of the film deposition apparatus. [Figure 17] A flowchart illustrating an example of processing performed by the control device of a measuring instrument. [Figure 18] An explanatory diagram showing another example of the behavior of the substrate when adsorption is released. [Figure 19] This diagram illustrates an example where the detection of the substrate's behavior during suction release and the setting of the electrostatic chuck's drive are performed using different devices. [Figure 20] Figure showing an example of a charge removal device. [Figure 21] Figure showing an example of a charge removal device. [Figure 22] Figure showing an example of a charge removal device. [Figure 23] Figure showing an example of a charge removal device. [Figure 24] Figure showing an example of a charge removal device. [Figure 25] Figure showing an example of a charge removal device. [Figure 26] Figure showing an example of a charge removal device. [Figure 27] Figure showing an example of a charge removal device. [Figure 28] Figure showing an example of a charge removal device. [Figure 29] (A) is an overall view of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of one pixel.

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are given the same reference numerals, and redundant explanations are omitted.

[0010] <First Embodiment> <Film Formation System> FIG. 1 is a schematic diagram showing the configuration of a film formation system A according to an embodiment. The film formation system A is a device for forming a film of a vapor deposition material on a substrate 100. The film formation system A can be applied, for example, to the manufacture of a display panel of an organic EL display device for a smartphone.

[0011] The substrate 100 is transported in the following order, as indicated by the arrows: buffer chamber 306A → swivel chamber 307A → transfer chamber 308A → deposition block 301A → buffer chamber 306B → swivel chamber 307B → transfer chamber 308B → deposition block 301B → buffer chamber 306C → swivel chamber 307C → transfer chamber 308C. In the following explanation, buffer chambers 306A to 306C will be referred to as buffer chamber 306 if they are not distinguished or are referred to collectively. Similarly, swivel chambers 307A to 307C will be referred to as swivel chamber 307, transfer chambers 308A to 308C will be referred to as transfer chamber 308, and deposition blocks 301A and 301B will be referred to as deposition block 301.

[0012] The deposition block 301 has a transport chamber 302 which has an octagonal shape in plan view, surrounded by multiple deposition chambers 303 where the deposition process on the substrate 100 takes place, and a mask storage chamber 305 where masks before and after use are stored. A transport robot 302a for transporting the substrate 100 is positioned in the transport chamber 302. The transport robot 302a includes a hand for holding the substrate 100 and a multi-joint arm for moving the hand horizontally. In other words, the deposition block 301 is a cluster-type deposition unit in which multiple deposition chambers 303 are arranged to surround the transport robot 302a. In the deposition block 301, the substrate 100 may be transported sequentially to multiple deposition chambers 303 for deposition. Alternatively, the substrate 100 may be transported to only one of the multiple deposition chambers 303 for deposition.

[0013] The buffer chamber 306, the swirling chamber 307, and the transfer chamber 308 are located upstream and downstream of the film deposition block 301, respectively, in the transport direction of the substrate 100. During the manufacturing process, each chamber is maintained under vacuum. Although two film deposition blocks 301 are shown in Figure 1, the film deposition system 1 may have three or more film deposition blocks 301, or it may have only one film deposition block 301.

[0014] In this embodiment, the film deposition system A constitutes a manufacturing line in which a plurality of film deposition blocks 301 are connected by a coupling device consisting of a buffer chamber 306, a swirling chamber 307, and a transfer chamber 308. However, the configuration of the coupling device is not limited to this, and may consist of, for example, only a buffer chamber 306 or a transfer chamber 308.

[0015] The transport robot 302a performs the following tasks: transporting the substrate 100 from the upstream transfer chamber 308 to the transport chamber 302, transporting the substrate 100 between the film deposition chambers 303, transporting the mask between the mask storage chamber 305 and the film deposition chamber 303, and transporting the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0016] The buffer chamber 306 is a chamber for temporarily storing the circuit boards 100 depending on the operating status. The buffer chamber 306 is equipped with a circuit board storage shelf, also called a cassette, and a lifting mechanism. The circuit board storage shelf has a multi-tiered structure that can store multiple circuit boards 100 while maintaining a horizontal state with the processing surface (film-forming surface) of the circuit boards 100 facing downward in the direction of gravity. The lifting mechanism raises and lowers the circuit board storage shelf to align the stage in which the circuit boards 100 are loaded or unloaded with the transport position. As a result, multiple circuit boards 100 can be temporarily stored and retained in the buffer chamber 306.

[0017] The rotating chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the rotating chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot provided in the rotating chamber 307. The transport robot provided in the rotating chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and hands it over to the transfer chamber 308, so that the front and rear ends of the substrate are swapped between the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is brought into the deposition chamber 303 is the same in each deposition block 301, so that the scanning direction of the evaporation source and the orientation of the mask relative to the substrate 100 can be matched in each deposition block 301. With this configuration, the orientation in which the mask is installed in the mask storage chamber 305 can be matched in each deposition block 301, simplifying mask management and improving usability.

[0018] The control system of the film deposition system A includes a host computer, a higher-level device 300 that controls the entire line, and control devices 310 to 313 that control each component, which can communicate via a wired or wireless communication line 300a. Control device 310 controls the substrate processing equipment in the turning chamber 307. Control device 311 controls the substrate processing equipment in the transfer chamber 308. Control device 312 controls the substrate processing equipment in the transport chamber 302. Control device 313 controls the substrate processing equipment in the film deposition chamber 303. A control device 313 is provided for each film deposition chamber 303. The higher-level device 300 transmits information about the substrate 100 and instructions such as transport timing to each control device 310 to 313, and each control device 310 to 313 controls each component based on the received instructions.

[0019] <Overview of the film deposition apparatus> Figure 2 is a schematic diagram of a film deposition apparatus 1 according to one embodiment. The film deposition apparatus 1, which is a substrate processing apparatus provided in the film deposition chamber 303, is a deposit-up type film deposition apparatus that deposits a deposition material onto a substrate 100 from below, forming a thin film of a predetermined pattern of deposition material on the substrate 100 via a mask 101. The material of the substrate 100 on which film deposition is performed in the film deposition apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and a material with a resin layer such as polyimide formed on glass is preferably used. The deposition material can be an organic material or an inorganic material (metal, metal oxide, etc.). The film deposition apparatus 1 can be applied to manufacturing equipment for electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film image sensors), as well as optical components, and is particularly applicable to manufacturing equipment for manufacturing organic EL panels. In the following description, an example in which the film deposition apparatus 1 deposits a film on the substrate 100 by vacuum deposition will be described, but this embodiment is not limited to this and can be applied to various film deposition methods such as sputtering and CVD.

[0020] The film deposition apparatus 1 has a box-shaped vacuum chamber 3 (also simply called a chamber) capable of maintaining a vacuum inside. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state. The internal space 3a of the vacuum chamber 3 is equipped with a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask stand 5 that supports the mask 101, a film deposition unit 4, a plate unit 9, and an electrostatic chuck 15.

[0021] The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern to be formed on the substrate 100, and is placed on the mask stand 5. The mask stand 5 can be replaced with other means for fixing the mask 101 in a predetermined position. As the mask 101, a mask having a structure in which a mask foil with a thickness of several μm to several tens of μm is welded and fixed to a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, but a metal with a low coefficient of thermal expansion, such as Invar material, may be used. The film formation process is carried out with the substrate 100 placed on the mask 101, and the substrate 100 and the mask 101 superimposed on each other.

[0022] The plate unit 9 comprises a cooling plate 10 and a magnetic plate 11. The cooling plate 10 is suspended below the magnetic plate 11 so as to be displaceable in the Z direction relative to the magnetic plate 11. The cooling plate 10 has the function of cooling the substrate 100 that is attracted to the electrostatic chuck 15 during film formation by contacting the electrostatic chuck 15, which will be described later. The cooling plate 10 is not limited to one that actively cools the substrate 100 by having a water cooling mechanism or the like, and may be a plate-shaped member that removes heat from the substrate 100 by contacting the electrostatic chuck 15, even if it does not have a water cooling mechanism or the like. The magnetic plate 11 is a plate that attracts the mask 101 by magnetic force and is placed on the upper surface of the substrate 100 to improve the adhesion between the substrate 100 and the mask 101 during film formation.

[0023] Note that the cooling plate 10 and the magnetic plate 11 may be omitted as appropriate. For example, if the electrostatic chuck 15 is equipped with a cooling mechanism, the cooling plate 10 may be omitted. Also, if the electrostatic chuck 15 attracts the mask 101, the magnetic plate 11 may be omitted.

[0024] The film deposition unit 4 consists of a heater, shutter, drive mechanism, evaporation rate monitor, etc., and is a deposition source for depositing the deposition material onto the substrate 100. More specifically, the film deposition unit 4 is a linear evaporation source equipped with multiple nozzles (not shown), from which the deposition material is discharged. For example, the linear evaporation source is reciprocated in the depth direction of the apparatus by an evaporation source movement mechanism (not shown). In this embodiment, the film deposition unit 4 is installed in the vacuum chamber 3 where the alignment process described later is performed.

[0025] In addition to Figure 2, Figure 3 will be used for further explanation. Figure 3 is an explanatory diagram of the substrate support unit 6 and the electrostatic chuck 15, and is a view of them from below.

[0026] The substrate support unit 6 supports the peripheral edge of the substrate 100. The substrate support unit 6 comprises a plurality of base portions 61a to 61d that constitute its outer frame, and a plurality of mounting portions 62 and 63 that protrude inward from the base portions 61a to 61d. The mounting portions 62 and 63 are sometimes also called "receiving claws" or "fingers". The base portions 61a to 61d are each supported by a support shaft R3. The plurality of mounting portions 62 are arranged at intervals between the base portions 61a to 61d so as to receive the long side of the peripheral edge of the substrate 100. The plurality of mounting portions 63 are also arranged at intervals between the base portions 61a to 61d so as to receive the short side of the peripheral edge of the substrate 100. The substrate 100, which has been transported into the film deposition apparatus 1 by the transport robot 302a, is supported by the plurality of mounting portions 62 and 63. When referring collectively to base sections 61a to 61d, or when not distinguishing between them, they are referred to as base section 61.

[0027] In this embodiment, the multiple mounting portions 62 and 63 are made of leaf springs, and when the substrate 100 supported by the multiple mounting portions 62 and 63 is attracted to the electrostatic chuck 15, the elastic force of the leaf springs can press the periphery of the substrate 100 against the electrostatic chuck 15.

[0028] In the example shown in Figure 3, a rectangular frame with partial cutouts is formed by four base portions 61, but the design is not limited to this. The base portions 61 may be a continuous rectangular frame that surrounds the outer periphery of the rectangular substrate 100. However, by providing cutouts with multiple base portions 61, the transport robot 302a can avoid the base portions 61 and move out of the way when transferring the substrate 100 to the mounting portions 62 and 63. This improves the efficiency of transporting and transferring the substrate 100.

[0029] Furthermore, the substrate support unit 6 may be provided with multiple clamping parts corresponding to the multiple mounting parts 62 and 63, and the peripheral edges of the substrate 100 placed on the mounting parts 62 and 63 may be held by being clamped by the clamping parts.

[0030] The electrostatic chuck 15 attracts the substrate 100 to be deposited. In this embodiment, the electrostatic chuck 15 is provided between the substrate support unit 6 and the plate unit 9 and is supported by a plurality of support shafts R1. In this embodiment, the electrostatic chuck 15 is supported by four support shafts R1. In one embodiment, the support shafts R1 are cylindrical shafts.

[0031] The electrostatic chuck 15 includes a structure in which an electrical circuit, such as a metal electrode, is embedded inside a matrix (also called a base) made of ceramic material. The surface of the electrostatic chuck 15 may be made of polyimide (resin) and may be anodized. In this embodiment, the electrostatic chuck 15 has a plurality of electrode portions 151. The electrode portion 151 includes an electrode 1511 to which a positive (+) voltage is applied and an electrode 1512 to which a negative (-) voltage is applied. When a voltage is applied to electrodes 1511 and 1512, a polarization charge is induced in the substrate 100 through the ceramic matrix, and the substrate 100 is attracted to the adsorption surface 150 of the electrostatic chuck 15 by an electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15.

[0032] In this embodiment, electrodes 1511 and 1512 each have a comb-shaped metal member, and these comb-shaped portions are arranged alternately so that they are intricately intertwined. However, the configuration of the electrode portion 151 can be set as appropriate, as long as it can generate an electrostatic attraction force with the substrate 100 which is the object to be adsorbed. The shape and number of electrode portions 151 can also be changed as appropriate. For example, one electrode portion 151 may be formed over substantially the entire surface of the adsorption surface 150 of the electrostatic chuck 15.

[0033] Furthermore, the electrostatic chuck 15 has multiple openings 152, and the measurement units (first measurement unit 7 and second measurement unit 8), which will be described later, acquire information regarding the relative positional relationship between the substrate 100 and the mask 101 by imaging alignment marks, which will be described later, through the multiple openings 152.

[0034] The film deposition apparatus 1 is equipped with a sensor 16 that detects the behavior of the substrate 100 when the suction by the electrostatic chuck 15 is released. In this embodiment, the sensor 16 is a plurality of touch sensors provided on the electrostatic chuck 15. In the illustrated example, the sensor 16 is arranged along the periphery of the electrostatic chuck 15. The sensor 16 is also used to detect the degree of suction of the substrate 100 to the suction surface 150. Based on the detection results of the sensor 16, it is possible to detect whether the entire surface of the substrate 100 is suctioned to the suction surface 150, or whether a part of it is not suctioned, etc.

[0035] The sensor 16 may be a mechanical sensor. For example, the sensor 16 has a tip that is biased by a spring or the like. The tip is provided to protrude from the suction surface 150 when it is not in contact with the substrate 100. When the substrate 100 is attracted to the suction surface 150, the tip of the sensor 16 is pushed back by the substrate 100 and retracts, and the sensor 16 is configured to output a predetermined electrical signal when it comes into contact with an internal contact.

[0036] Refer to Figure 2. The position adjustment unit 20 adjusts the relative position between the substrate 100, whose peripheral edge is supported by the substrate support unit 6, or the substrate 100 which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 in the XY plane. In other words, the position adjustment unit 20 can also be said to be a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in two mutually orthogonal horizontal directions and rotate it around the vertical axis. In this embodiment, the position of the mask 101 is fixed and the relative position of the substrate 100 is displaced to adjust it, but the mask 101 may be displaced to adjust it, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjustment unit 20 may displace the substrate support unit 6 using a well-known configuration, such as a motor that is a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0037] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask stand 5 by raising and lowering them, thereby bringing the substrate 100 and the mask 101 closer together and further apart in the thickness direction (vertical direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lifting plate 22a that supports the electrostatic chuck 15 via a plurality of support shafts R1 and the substrate support unit 6 via a plurality of support shafts R3. The distance adjustment unit 22 raises and lowers the electrostatic chuck 15 and the substrate support unit 6 by raising and lowering the first lifting plate 22a.

[0038] In other words, the distance adjustment unit 22 moves the substrate 100 and the mask 101 closer together in the direction of overlapping, or further apart in the opposite direction. The "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or vertical distance), and the distance adjustment unit can also be said to be a unit that adjusts the vertical position of the mask 101 and the substrate 100. For example, the position adjustment unit 20 may displace the first lifting plate 22a by a well-known configuration such as a motor that is the drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0039] Furthermore, the distance adjustment unit 22 includes an actuator (lifting unit) 65 that moves the substrate support unit 6 up and down relative to the first lifting plate 22a, thereby changing the vertical relative position of the substrate support unit 6 with respect to the electrostatic chuck 15.

[0040] In this embodiment, the distance adjustment unit 22 fixes the position of the mask stand 5 and adjusts the distance between the substrate support unit 6 and the electrostatic chuck 15 in the Z direction by moving them, but it is not limited to this. The position of the substrate support unit 6 or the electrostatic chuck 15 may be fixed and the mask stand 5 may be moved to adjust the distance, or the distance between the substrate support unit 6, the electrostatic chuck 15, and the mask stand 5 may be adjusted by moving each of them.

[0041] The plate unit lifting unit 13 is connected to the second lifting plate 12, which is located outside the vacuum chamber 3, and lifts and lowers the plate unit 9, which is located inside the vacuum chamber 3, by raising and lowering the second lifting plate 12, which is located outside the vacuum chamber 3. The plate unit 9 is connected to the second lifting plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lifting plate 12 by passing through the opening in the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening in the first lifting plate 22a. For example, the position adjustment unit 20 may displace the second lifting plate 12 by a well-known configuration such as a motor that is a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0042] The openings in the upper wall 30 of the vacuum chamber 3, through which each of the aforementioned support shafts R1 to R3 passes, are sized to allow each of the support shafts R1 to R3 to be displaced in the X and Y directions. To maintain the airtightness of the vacuum chamber 3, bellows or the like are provided at the openings in the upper wall 30 through which each of the support shafts R1 to R3 passes.

[0043] The measurement units (first measurement unit 7 and second measurement unit 8) measure the misalignment between the substrate 100, whose peripheral edge is supported by the substrate support unit 6, and the mask 101. Both the first measurement unit 7 and the second measurement unit 8 in this embodiment are imaging devices (cameras) that capture images. The first measurement unit 7 and the second measurement unit 8 are positioned above the upper wall portion 30 and can capture images of the inside of the vacuum chamber 3 through a window portion (not shown) formed in the upper wall portion 30.

[0044] In this embodiment, alignment marks used for their alignment are formed on the substrate 100 and the mask 101, respectively. Furthermore, the substrate 100 and the mask 101 are provided with rough alignment marks for roughly adjusting their positions and fine alignment marks for more precise position adjustments, respectively.

[0045] The first measurement unit 7 is a low-magnification CCD camera (rough camera) with a relatively wide field of view and low resolution, and measures the approximate positional misalignment between the substrate 100 and the mask 101. For example, the first measurement unit 7 is provided with two units that image rough alignment marks, which are provided near the center of the short sides of the substrate 100 and the mask 101, respectively, through the aperture 152.

[0046] The second measurement unit 8 is a high-magnification CCD camera (fine camera) with a relatively narrow field of view but high resolution (e.g., on the order of several micrometers), and measures the positional misalignment between the substrate 100 and the mask 101 with high precision. The second measurement unit 8 is provided with four units, for example, to image the fine alignment marks provided at the four corners of the substrate 100 and the mask 101 through the aperture 152.

[0047] In this embodiment, after roughly adjusting the position of the substrate 100 and the mask 101 based on the measurement results of the first measurement unit 7, a precise adjustment of the position of the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0048] <Control device> Refer to Figure 2. The control device 313 controls the entire film deposition apparatus 1. The control device 313 comprises a processing unit 313a, a storage unit 313b, an input / output interface (I / O) 313c, and a communication unit 313d. The processing unit 313a is a processor, such as a CPU, and controls the film deposition apparatus 1 by executing a program stored in the storage unit 313b. The storage unit 313b is a storage device such as ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit 313a. The I / O 313c is an interface that sends and receives signals between the processing unit 313a and each component of the film deposition apparatus 1. The communication unit 313d is a communication device that communicates with a higher-level device 300 or other control devices 310 to 312, etc., via a communication line 300a. The processing unit 313a receives information from the higher-level device 300 or transmits information to the higher-level device 300 via the communication unit 313d. Furthermore, all or part of the control device 313 and the higher-level device 300 may be composed of a PLC, ASIC, or FPGA.

[0049] <Control Example> Figure 4 is a flowchart showing an example of processing performed by the processing unit 313a of the control device 313, and is an example of the control of the film deposition apparatus 1. This flowchart outlines the process performed by the film deposition apparatus 1 on one substrate 100. Figure 5 is an explanatory diagram of the state of the film deposition apparatus 1 at each stage of the process.

[0050] In step S1, the loading process is performed. In this process, the substrate 100 is loaded into the film deposition apparatus 1 by the transport robot 302a. The loaded substrate 100 is supported by the substrate support unit 6 at its peripheral edge (state ST100).

[0051] In step S2, the suction process is performed. The substrate support unit 6, which supports the substrate 100, is raised to a predetermined position by the actuator 65, and the substrate 100 is transferred from the substrate support unit 6 to the electrostatic chuck 15 (state ST101). In state ST101, the peripheral edge of the substrate 100, supported by the substrate support unit 6, is in contact with the electrostatic chuck 15 or slightly separated from it. On the other hand, the central part of the substrate 100 is flexed due to its own weight and is therefore located further away from the electrostatic chuck 15 compared to the peripheral edge. In state ST101, a voltage is applied to the electrode portion 151 of the electrostatic chuck 15 to generate a suction force, causing the substrate 100 to be attracted to the electrostatic chuck 15 (state ST102).

[0052] In step S3, the alignment process is performed. The electrostatic chuck 15 and substrate support unit 6, which are holding the substrate 100, are lowered by the distance adjustment unit 22 to bring the substrate 100 closer to the mask 101. Then, the position adjustment unit 20 adjusts the horizontal position of the substrate 100 and the mask 101 (state ST103).

[0053] In step S4, the film deposition process is performed. The electrostatic chuck 15 and substrate support unit 6, which are holding the substrate 100, are lowered by the distance adjustment unit 22, and the aligned substrate 100 and mask 101 come into contact and are stacked. Next, the plate unit 9 is lowered. The magnetic force of the magnetic plate 11 brings the substrate 100 and mask 101 into closer contact (state ST104). In this state, the film deposition unit 4 releases the deposition material and deposits it onto the substrate 100. The deposition material is then deposited.

[0054] In step S5, the peeling and inspection processes are performed. Here, the electrostatic chuck 15 and the substrate support unit 6 are raised by the distance adjustment unit 22 to separate the substrate 100 from the mask 101. By stopping the application of voltage to the electrode portion 151, the adsorption by the electrostatic chuck 15 is released, and the substrate 100 is peeled off from the electrostatic chuck 15 (state ST100). In addition, the behavior of the substrate 100 when the adsorption by the electrostatic chuck 15 is released is detected, and its charged state is inspected. Details will be described later.

[0055] In step S6, the unloading process is performed. In this process, the actuator 65 lowers the substrate support unit 6, separating the substrate 100 from the electrostatic chuck 15. The transport robot 302a enters the film deposition apparatus 1 and transfers the substrate 100 from the substrate support unit 6 to the transport robot 302a. The transport robot 302a then unloads the substrate 100 from the film deposition apparatus 1 to the outside of the apparatus.

[0056] <Contents of the inspection process> The contents of the inspection process in step S5 will now be explained. The substrate 100 may become charged due to various factors during its transport process. If the substrate is heavily charged, the suction force of the electrostatic chuck 15 on the substrate may become too strong, placing an excessive load on the substrate. In this embodiment, the behavior of the substrate 100 when the suction by the electrostatic chuck 15 is released is detected using the sensor 16, and the charged state of the substrate 100 is evaluated. Figure 6 shows an example of the behavior of the substrate 100 when the suction by the electrostatic chuck 15 is released.

[0057] In the stage of releasing the suction by the electrostatic chuck 15, in this embodiment, the peripheral edge of the substrate 100 is supported and restrained by the substrate support unit 6. When the suction is released, the central part of the substrate 100 bends downward due to its own weight, but the elasticity of the substrate 100 causes the central part of the substrate 100 to vibrate up and down. After the vibration, the substrate 100 comes to rest with its central part bent downward.

[0058] During vibration, the substrate 100 comes into contact with and separates from the suction surface 150 of the electrostatic chuck 15. In the inspection process, the number of vibrations of the substrate 100 is detected by a sensor 16. There may be one sensor 16 or multiple sensors 16 used to detect the number of vibrations. When detecting the number of vibrations with multiple sensors 16, the average value of the vibration detection results from each sensor 16 may be used as the number of vibrations of the substrate 100.

[0059] If the substrate 100 has a high charge level, it will be difficult to detach from the electrostatic chuck 15 when releasing the adsorption. Therefore, the vibration frequency tends to decrease. If the vibration frequency of the substrate 100 is low, it can be evaluated that the substrate 100 has a high charge level. Conversely, if the charge level of the substrate 100 is low, it will be easier to detach from the electrostatic chuck 15. If the vibration frequency of the substrate 100 is high, it can be evaluated that the charge level of the substrate 100 is low.

[0060] Figure 7 shows the experimental results investigating the relationship between the vibration frequency of the substrate 100 and the amount of charge on the substrate 100. In this experiment, the substrate 100 was repeatedly transported to the film deposition apparatus 1 within the film deposition block 301. Each time the number of transports to the film deposition apparatus 1 reached a predetermined number, the substrate 100 was attached to the electrostatic chuck 15 in the film deposition apparatus 1 under conditions similar to actual film deposition, and the vibration frequency of the substrate 100 was detected by the sensor 16 when the chuck was released. Furthermore, the amount of charge on the surface of the substrate 100 was measured using a surface potential meter. As shown in Figure 7, a correlation was confirmed between the amount of charge on the substrate 100 and the vibration frequency of the substrate 100 when the chuck was released. The more vibrations, the lower the charge, and the fewer vibrations, the higher the charge. In this experiment, the substrate 100 was negatively charged, but depending on the material of the substrate 100, it may be positively charged. Regardless of whether the charge is positive or negative, a larger charge makes it more difficult for the substrate 100 to detach from the electrostatic chuck 15, so the correlation between the charge and the number of vibrations is the same.

[0061] In the inspection process of step S5, the charge state of the substrate 100 is detected using this principle. In this embodiment, the charge state of the substrate 100 can be detected relatively easily by using the sensor 16. The vibration count detection result is stored, for example, in the memory unit 313b and can be used for subsequent drive control of the electrostatic chuck 15.

[0062] <Setting driving conditions according to the charge state> Depending on the charge state of the substrate 100 inspected in step S5, the driving conditions of the electrostatic chuck 15 when subsequently picking up the substrate 100 with the electrostatic chuck 15 can be set. This allows the electrostatic chuck 15 to pick up the substrate 100 according to its charge state, preventing the picking force from being too strong or too weak.

[0063] Figure 6 is a flowchart showing an example of processing performed by the processing unit 313a of the control device 313, which is the process for setting the driving conditions of the electrostatic chuck 15.

[0064] In step S11, the inspection results from the inspection process in step S5 are obtained from the storage unit 313b. In step S12, the driving conditions for the electrostatic chuck 15 are set. In this embodiment, the voltage applied to the electrode unit 151 is set as the driving condition. Figure 9 shows an example of the setting.

[0065] In the illustrated example, the reference voltage values ​​are shown as +V0 at electrode 1511 and -V0 at electrode 1512 of electrode unit 151. If the number of vibrations detected in the inspection process of step S5 is greater than or equal to a predetermined threshold Th0, this reference voltage value is set.

[0066] If the number of vibrations detected in the inspection process of step S5 is greater than or equal to a predetermined threshold Th1 and less than a predetermined threshold Th0, a voltage value smaller than the reference voltage value is set. In the illustrated example, +V1 (<V0) is set for the electrode 1511 of the electrode portion 151, and -V1 (> -V0) is set for the electrode 1512. The attractive force generated by the electrostatic chuck 15 during adsorption becomes smaller. However, since the substrate 100 is charged to a certain extent, the total adsorption force of the substrate 100 with respect to the electrostatic chuck 15 is substantially the same as when the reference voltage value is applied.

[0067] If the number of vibrations detected in the inspection process of step S5 is less than a predetermined threshold Th1, a voltage value even smaller than the reference voltage value is set. In the illustrated example, +V2 (<V1) is set for the electrode 1511 of the electrode portion 151, and -V2 (> -V1) is set for the electrode 1512. The attractive force generated by the electrostatic chuck 15 during adsorption becomes even smaller. However, since the substrate 100 is considerably charged, the total adsorption force of the substrate 100 with respect to the electrostatic chuck 15 is substantially the same as when the reference voltage value is applied.

[0068] In this embodiment, the driving conditions are set step by step by comparing the number of vibrations with the threshold value. However, the driving conditions may be derived as continuous values by an arithmetic expression using the number of vibrations as a variable. The driving conditions may be, in addition to the voltage applied to the electrode portion 151, the start timing of applying the voltage to the electrode portion 151, the end timing of ending the voltage application, the application time of applying the voltage, and the voltage application pattern. The voltage application pattern may include the application start voltage, the arrival voltage, and the voltage increase time.

[0069] Furthermore, the absolute value of the voltage applied to electrode portion 1511 and the absolute value of the voltage applied to electrode portion 1512 may be different depending on whether the substrate 100 is positive or negative. For example, if the substrate 100 is positively charged and the reference voltage is ±1.5kV, the voltage applied to electrode portion 1511, to which a positive voltage is applied, may be set to +1.0kV, and the voltage applied to electrode portion 1512, to which a negative voltage is applied, may be set to -2.0kV. Also, for example, if the substrate 100 is negatively charged and the reference voltage is ±1.5kV, the voltage applied to electrode portion 1511, to which a positive voltage is applied, may be set to +2.0kV, and the voltage applied to electrode portion 1512, to which a negative voltage is applied, may be set to -1.0kV.

[0070] <Regarding the setting of inspection processes and driving conditions> In the example in Figure 4, the inspection step S5 is performed after each process in Figure 4. However, the inspection step may be performed after each multiple execution of the process in Figure 4. Furthermore, the inspection step may be performed only when the film deposition system 1 starts operating, or it may be performed on a dummy substrate that is not actually subjected to film deposition. The same applies to the drive condition setting process in Figure 8. That is, the process in Figure 8 may be executed after each process in Figure 4, or it may be performed each time the inspection step is performed. Also, the drive condition setting process in Figure 8 may be performed each time the inspection step is performed multiple times, in which case the vibration count may be the average value of the detection results from multiple instances or processes.

[0071] <Second Embodiment> In the first embodiment, the inspection process in step S5 and the drive condition setting process in Figure 8 were performed on the electrostatic chuck 15 of the film deposition apparatus 1, but it is also possible to apply these to electrostatic chucks other than those of the film deposition apparatus 1.

[0072] Figure 10 is a schematic diagram of a measuring device 201 according to one embodiment of the present invention. The measuring device 201 is a substrate processing apparatus installed, for example, in the transfer chamber 308B or the transfer chamber 308C, and is a device for measuring the film thickness of a substrate 100 that has been deposited on the film deposition block 301A or the film deposition block 301B. The measuring device 201 includes a chamber 210, an electrostatic chuck 211, a moving unit 212, a suction assist unit 213, a positioning unit 214, a substrate support unit 215, and a measuring unit 216.

[0073] The chamber 210 has a box-like shape and forms a transfer chamber 308. The inside of the chamber 210 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the chamber 210 is connected to a vacuum pump (not shown).

[0074] In this embodiment, the pre-filmed substrate 100 to be measured is transported into the chamber 210 by a transport robot in the rotating chamber 307 through an entrance (not shown) formed in the chamber 210. The inspected substrate 100 is then transported out of the chamber 210 by a transport robot (not shown) downstream of the transfer chamber 308 through an exit (not shown) formed in the chamber 210.

[0075] The measurement unit 216 measures the film thickness of the film deposited on the substrate 100. The measurement results are used to control the film deposition apparatus in the deposition chamber 303, thereby improving the quality of the deposited film.

[0076] Figure 3 is an explanatory diagram of film thickness measurement. In the illustrated example, a film 100a such as an organic EL is deposited on the lower surface of the substrate 100, and the film 100a is deposited in the film deposition area, which is the manufacturing area for electronic devices. An inspection film 100c for film thickness measurement is deposited in an inspection area 100b adjacent to the film deposition area of ​​film 100a. The inspection area 100b is set at a predetermined position (in this embodiment, the edge of the substrate 100). In this embodiment, the inspection area 100b is distinguished from the film deposition area (manufacturing area), but the inspection area 100b may be part of the film deposition area. Film thickness measurement is performed by moving the measuring head 2161 of the measuring unit 216 along the lower surface of the substrate 100 and reading the inspection film 100c with the measuring head 2161.

[0077] In this embodiment, the measuring head 2161 optically measures the thickness of the inspection film 100c. The measuring head 2161 includes a light source that irradiates light onto the substrate 100 and a light receiving unit that receives reflected light from the substrate 100. The light received by the light receiving unit is spectrally analyzed, and the light intensity is calculated for each wavelength band. The thickness can then be estimated from the relationship between the thickness and light intensity in multiple wavelength bands, which has been obtained in advance through experiments or other means. Note that the method for measuring the thickness is not limited to this example, and the inspection content by the measuring unit 216 may be properties of the film other than thickness.

[0078] The electrostatic chuck 211 will be described with reference to Figure 12. Figure 4 is a perspective view of the electrostatic chuck 211. In this embodiment, the electrostatic chuck 211 is a unit that attracts the substrate 100 by electrostatic force.

[0079] The electrostatic chuck 211 includes a frame 2111 and an electrode placement section 2112. The frame 2111 is a rectangular member that forms the outer shape of the electrostatic chuck 211. For example, the frame 2111 forms a frame that is equal to or larger than the size of the substrate 100 to be attracted by the electrostatic chuck 211. Components of the moving unit 212 and the positioning unit 214, which will be described later, are provided on the side of the frame 2111. The electrode placement section 2112 attracts the substrate 100 by electrostatic force. The electrode placement section 2112 has electrodes similar to those of the electrode section 151 of the electrostatic chuck 15.

[0080] The measuring device 201 includes a sensor 217 that detects the behavior of the substrate 100 when the electrostatic chuck 211 releases its hold. In this embodiment, the sensor 217 is the same type of sensor as the sensor 16, and is a touch sensor provided in multiple locations on the electrode arrangement section 2112 of the electrostatic chuck 211. The sensor 217 is also used to detect the hold of the substrate 100.

[0081] Refer to Figures 10 and 12. The moving unit 212 is a mechanism for moving the electrostatic chuck 211. In this embodiment, the moving unit 212 is a lifting unit that raises and lowers the electrostatic chuck 211 in the vertical direction. The moving unit 212 includes a movable part 2121, a fixed part 2122, and a drive part 2123.

[0082] The movable part 2121 supports the electrostatic chuck 211 and is provided to be movable together with the electrostatic chuck 211. The movable part 2121 includes a lifting member 21211, a plurality of connecting members 21212, and a plurality of lifting shafts 21214. The lifting shafts 21214 are shaft members that extend in the Z direction so as to be suspended from the lifting member 21211, and only their lower ends are shown in Figure 10. The connecting members 21212 are members that are connected to the electrostatic chuck 211. The lifting shafts 21214 and the connecting members 21212 are connected via a joint 21213 equipped with a spherical bearing, and the connecting members 21212 are pivotable relative to the lifting shafts 21214.

[0083] The fixed part 2122 is fixed to the upper wall 210a of the chamber 210. The drive unit 2123 includes a drive source that generates a driving force to move the movable part 2121, and a mechanism that converts the driving force of the drive source into translational motion. For example, the rotational driving force of an electric motor is converted into translational motion by a ball screw mechanism and transmitted to the movable part 2121, causing the movable part 2121 to move up and down. This causes the electrostatic chuck 211 to move up and down.

[0084] The suction assist unit 213 corrects the substrate 100 during suction by the electrostatic chuck 211, reducing the curvature of the substrate 100 so that it can be suctioned in a flatter position. The substrate 100 is supported at its periphery by the substrate support unit 215. As a result, the central part curves downward. The suction assist unit 213 corrects this curvature by pressing the periphery of the substrate 100 downward.

[0085] The suction assist unit 213 of this embodiment includes a shaft-shaped pressing portion 2131 that presses against the substrate 100, and a lifting portion 2132 that raises and lowers the pressing portion 2131. The lifting portion 2132 can appropriately employ known technologies such as an electric motor and a ball screw mechanism.

[0086] In this embodiment, the suction assist unit 213 presses the substrate 100 so that the substrate 100 supported by the substrate support unit 215 is partially separated from the electrostatic chuck 211. Specifically, the pressing portion 2131 presses the substrate 100 from above through the through hole 21112 formed in the frame 2111 of the electrostatic chuck 211. In addition, in this embodiment, the suction assist unit 2213 uses its four pressing portions 22131 to press the four corners of the substrate 100 from above, correcting the substrate 100 to a more horizontal position.

[0087] The positioning unit 214 is a unit that positions the electrostatic chuck 211. Specifically, the positioning unit 214 positions the electrostatic chuck 211 to the position where it will be inspected by the measuring unit 216. The positioning unit 214 includes a stopper portion 2141 and a receiving portion 2142.

[0088] The abutment portion 2141 is provided on the side surface of the frame 2111 of the electrostatic chuck 211. That is, the abutment portion 2141 moves together with the electrostatic chuck 211 by the moving unit 212. In this embodiment, the abutment portion 2141 is formed such that the portion that abuts against the receiving portion 2142 is spherical.

[0089] The receiving portion 2142 is fixed within the chamber 210 at a position corresponding to the abutment portion 2141, and receives the abutment portion 2141. Here, the receiving portion 2142 is shown as a conical recess opening upward. The position of the electrostatic chuck 211 is defined by the fitting of the spherical portion of the receiving portion 2142 into the recess of the receiving portion 2142. In this embodiment, six abutment portions 2141 are provided on the side surface of the frame 2111 of the electrostatic chuck 211, and six receiving portions 2142 are provided at corresponding positions. However, the number of abutment portions 2141 and receiving portions 2142 can be changed. Also, not all of the receiving portions 2142 have to be conical recesses as shown. For example, multiple receiving portions 2142 may include V-shaped grooves and flat surfaces. Furthermore, the abutment portions 2141 and receiving portions 2142 may form a so-called kinematic mount.

[0090] Figure 13 is a perspective view of the substrate support unit 215 and the measuring unit 216. The substrate support unit 215 is a unit that supports the substrate 100. The substrate 100 to be inspected, which is brought into the measuring device 201, is supported by the substrate support unit 215, and the inspected substrate 100 is discharged from the substrate support unit 215 to the outside. The substrate support unit 215 supports the substrate 100 from below. The substrate support unit 215 is located in the chamber 210 between the electrostatic chuck 211 and the measuring unit 216 in the vertical direction. In this embodiment, the substrate support unit 215 includes a frame 2151 and a plurality of support members 2152.

[0091] The frame 2151 forms the outer shape of the substrate support unit 215 and is supported by the base member 2164 via a support column member. The base member 2164 is fixed inside the chamber 210. The frame 2151 has a rectangular frame shape, and the substrate 100 is supported inside the frame formed by the frame 2151. In this embodiment, the frame 2151 is composed of a plurality of members 21511 to 21514. Members 21511 and 21513 are arranged facing each other, and members 21512 and 21514 are arranged facing each other. Gaps are provided between members 21511 and 21513 and between members 21512 and 21514. By providing gaps between members in the short side portions of the frame 2151, contact between the frame 2151 and the transport robot can be avoided when the substrate 100 is transported by a transport robot or the like.

[0092] The support member 2152 is the part of the substrate support unit 215 that directly supports the substrate 100, and is formed, for example, by a leaf spring. In this embodiment, a plurality of support members 2152 are supported by the frame 2151 so as to extend inward into the frame formed by the frame 2151, and the peripheral edge of the substrate 100 is placed on the plurality of support members 2152. Because the support members 2152 are elastic, the load acting on the substrate 100 when the substrate 100 supported by the plurality of support members 2152 comes into contact with the electrostatic chuck 211 can be relieved by the elastic deformation of the support members 2152.

[0093] The measuring unit 216 comprises a measuring head 2161, a slider 2162, and a guide rail 2163. The guide rail 2163 extends on the base member 2164 in the direction of the short side of the substrate 100. The slider 2162 is reciprocable in the Y direction guided by the guide rail 2163. The mechanism for moving the slider 2162 can be, for example, a ball screw mechanism driven by a motor or a linear motor. The measuring head 2161 is mounted on the slider 2162 and reciprocates in the Y direction together with the slider 2162.

[0094] Refer to Figure 10. The control device 311 controls the measuring device 201. The control device 311 comprises a processing unit 311a, a storage unit 311b, an input / output interface (I / O) 311c, and a communication unit 311d. The processing unit 311a is a processor, such as a CPU, and controls the film deposition apparatus measuring device 201 by executing a program stored in the storage unit 311b. The storage unit 311b is a storage device such as ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit 311a. The I / O 311c is an interface for sending and receiving signals between the processing unit 311a and external devices. External devices include actuators and sensors provided by the measuring device 201. The communication unit 311d is a communication device that communicates with the host device 300 or other control devices 310, 312, 313, etc. via a communication line.

[0095] <Control Example> An example of control of the measuring device 201 by the control device 311 will be described. Figure 14 is a flowchart showing an example of processing performed by the processing unit 311a, and in particular, it shows an example of processing related to the measurement of the film thickness of the substrate 100. Figures 15 and 16 are explanatory diagrams of the operation of the measuring device 201.

[0096] In step S21, the substrate 100 is loaded into the measuring device 201 (loading process). Figure 15 shows the operation of the measuring device 201 when the substrate 100 is loaded. State ST151 shows the state before the substrate 100 is loaded. In state ST151, the electrostatic chuck 211 is in the retracted position. The retracted position is higher than the measurement position during film thickness measurement (see state ST161), and is a position that avoids contact between the substrate 100 being transported and the electrostatic chuck 211 or the substrate support unit 215. The measuring head 2161 is in the retracted position, moved to the outside of the substrate 100.

[0097] State ST152 shows the transport robot 307a in the rotating chamber 307 loading the substrate 100 into the chamber 210. State ST153 shows the state after the transport robot 307a has placed the substrate 100 on the substrate support unit 215 and moved away. In this state, the central part of the substrate 100 is sagging due to its own weight. With this, the loading of the substrate 100 is complete.

[0098] In step S22 of Figure 14, the substrate 100 is attracted by the electrostatic chuck 211 (attraction step). State ST161 in Figure 16 shows the state in which the substrate 100 is attracted to the electrostatic chuck 211. In the attraction step, first, the attraction assist unit 213 corrects the deflection of the substrate 100. The pressing part 2131 presses the four corners of the substrate 100 from above to correct the substrate 100 to a more horizontal position. By pressing the corners of the substrate 100 with the pressing part 2131 of the attraction assist unit 213, deformation of the substrate 100 that causes the outside of the substrate 100 to point upward is suppressed. After this, the electrostatic chuck 211 is lowered to the measurement position and a voltage is applied to the electrode part of the electrostatic chuck 211.

[0099] This causes the substrate 100 to be attracted to the electrostatic chuck 211. The electrostatic chuck 211 is also positioned by the positioning unit 214. The electrostatic chuck 211 is lowered to the measurement position for film thickness measurement by the moving unit 212, and this movement by the moving unit 212 presses the electrostatic chuck 211 against the substrate 100 supported by the substrate support unit 215. The abutment portion 2141 fits into the receiving portion 2142, defining the position of the electrostatic chuck 211. At this time, the electrostatic chuck 211 can be slightly displaced by the joint 21213 equipped with a spherical bearing, and is positioned by the positioning unit 214. When the sensor 217 detects contact with the substrate 100, it is determined that the attraction of the substrate 100 is complete.

[0100] In step S23 of Figure 14, the film thickness of the substrate 100 is measured (measurement process). Here, the film thickness of the inspection film 100c (Figure 11) in the inspection area 100b is measured. State ST162 in Figure 16 shows this state. The measuring head 2161 moves from the retracted position to the position for film thickness measurement. The film thickness of the inspection film 100c is measured during the movement of the measuring head 2161. This completes the film thickness measurement.

[0101] In step S24 of Figure 14, the peeling and inspection processes are performed. First, the pressing portion 2131 of the suction assist unit 213 is raised to release the pressure on the four corners of the substrate 100. By stopping the application of voltage to the electrode portion of the electrostatic chuck 211, the suction by the electrostatic chuck 211 is released, and the substrate 100 is peeled off from the electrostatic chuck 211. The behavior of the substrate 100 when the suction by the electrostatic chuck 211 is released is detected by the sensor 217, and its charged state is inspected. State ST163 in Figure 16 shows this state. The inspection method is the same as the detection of the number of vibrations of the substrate 100 described with reference to Figure 6. The detection results are stored in the storage unit 311b.

[0102] In step S25 of Figure 14, a command to remove the substrate 100 is sent to the higher-level device 300, etc. In response, the transport robot 302a, located downstream of the measuring device 201, removes the substrate 100, whose film thickness has been measured, from the measuring device 201.

[0103] Next, the driving conditions for the electrostatic chuck 211 when subsequently picking up the substrate 100 can be set according to the charge state of the substrate 100 inspected in step S24. This allows the electrostatic chuck 211 to pick up the substrate 100 according to its charge state, preventing the picking force from being too strong or too weak.

[0104] Figure 17 is a flowchart showing an example of processing performed by the processing unit 311a of the control device 311, which is the process for setting the drive conditions of the electrostatic chuck 211. The content of the process is the same as the process for setting the drive conditions of the power supply chuck 15, which was explained with reference to Figure 8.

[0105] In step S31, the inspection results from the inspection process in step S24 are obtained from the storage unit 313b. In step S32, the driving conditions for the electrostatic chuck 211 are set. The setting method is the same as that of the first embodiment described with reference to Figure 9.

[0106] Through the above process, the electrostatic chuck 211 can perform adsorption according to the charge state of the substrate 100, preventing the adsorption force from being too strong or too weak.

[0107] Similar to the first embodiment, the inspection process may be performed each time the process shown in Figure 14 is repeated multiple times. Furthermore, the inspection process may be performed only when the film deposition system 1 starts operating, or it may be performed on a dummy substrate that is not actually subjected to film deposition. The same applies to the drive condition setting process shown in Figure 17. That is, the process in Figure 17 may be executed each time the process shown in Figure 14 is performed, or it may be performed each time the inspection process is carried out. Also, the drive condition setting process in Figure 17 may be performed each time the inspection process is repeated multiple times, in which case the vibration count may be the average value of the detection results from multiple attempts or processes.

[0108] <Third Embodiment> In the first and second embodiments, the number of vibrations of the substrate 100 was used as an indicator of the behavior of the substrate 100 at the time of release from the electrostatic chuck, which serves as an indicator for detecting the charged state. However, the position of the substrate 100 relative to the electrostatic chuck at the time of release from the electrostatic chuck may also be used. When the substrate 100 is heavily charged, it is difficult for the substrate 100 to separate from the electrostatic chuck, so the amount of deflection of the substrate 100 in the peeling direction at the time of release from the electrostatic chuck is small, and when the substrate 100 is lightly charged, the amount of deflection is large. Therefore, the charged state can be inferred from the position of the substrate 100 at the time of release from the electrostatic chuck.

[0109] Figure 18 shows one example. The illustrated example shows another example of the measuring device 201, in which sensor 217' is provided as a sensor instead of sensor 217. Sensor 217' is a laser displacement meter that measures the position of the substrate 100 (the distance of the center of the substrate 100 to sensor 217'). Sensor 217' detects the maximum displacement L of the center of the substrate 100 when the electrostatic chuck 211 is released. The maximum displacement L is the distance between the suction surface of the electrostatic chuck 211 and the center of the substrate 100, and is the shortest distance between the center of the substrate 100 and sensor 217'.

[0110] When setting the drive voltage of the electrode portion of the electrostatic chuck 211 as a driving condition, the longer the maximum displacement L, the less charge the substrate 100 is assumed to have, and the higher the drive voltage should be, and the shorter the maximum displacement L, the more charge the substrate 100 is assumed to have, and the lower the drive voltage should be,

[0111] Although the example in Figure 18 shows an application to the measuring device 201, this embodiment can also be applied to the film deposition apparatus 1. In this case, the sensor corresponding to sensor 217' may be provided with a moving mechanism that moves the sensor so that it is located below the center of the substrate 100 only during detection timing, and retracts outside the substrate 100 during non-detection timing.

[0112] <Fourth Embodiment> The film deposition system 1 is equipped with multiple film deposition apparatuses 1 and measuring devices 201 at various locations. The detection result of the charge state of the substrate 100 in one apparatus may be used to set the driving conditions of the electrostatic chuck in another apparatus. A specific example will be explained with reference to Figure 19.

[0113] In Figure 19, as an example, we focus on the film deposition apparatus 1 (referred to as apparatus P1) provided in the film deposition chamber 303 of film deposition block 301A, the measuring device 201 (referred to as apparatus P2) provided in the transfer chamber 308B, and the film deposition apparatus 1 (referred to as apparatus P3) provided in the film deposition chamber 303 of film deposition block 301B. Looking at the positions in the transport direction of the substrate 100, apparatus P1 is located at the upstream end, apparatus P3 is located at the downstream end, and apparatus P2 is located in between them. As information on the charged state of the substrate 100, we assume that the number of vibrations of the substrate 100 when adsorption is released is used, as in the first and second embodiments, but the application of the third embodiment is also possible.

[0114] Devices P1 and P3 are equipped with an electrostatic chuck 15 and a sensor 16, and the number of vibrations of the substrate 100 when suction is released is detected by the sensor 16. This detection result is transmitted from the control device 313 to the higher-level device 300, and can be notified from the higher-level device 300 to other control devices. Device P2 is equipped with an electrostatic chuck 211 and a sensor 217, and the number of vibrations of the substrate 100 when suction is released is detected by the sensor 217. This detection result is transmitted from the control device 311 to the higher-level device 300, and can be notified from the higher-level device 300 to other control devices. In other words, in S11 in Figure 8 and S31 in Figure 17, the detection result is obtained from the higher-level device 300 and the driving conditions are set.

[0115] Next, a specific example will be described. For example, the driving conditions of the electrostatic chuck 211 of device P2 are set based on the number of vibrations detected by the sensor 16 of device P1. In this method, when the same substrate 100 whose charge state has been inspected by device P1 is to be picked up by the electrostatic chuck 211 of device P2, the driving conditions can be set appropriately.

[0116] Similarly, the driving conditions for the electrostatic chuck 15 of device P3 are set based on the number of vibrations detected by the sensor 217 of device P2. In this method, the driving conditions can be appropriately set when the same substrate 100 that has had its charge state checked by device P2 is picked up by the electrostatic chuck 15 of device P3.

[0117] Similarly, the driving conditions for the electrostatic chuck 15 of device P3 are set based on the number of vibrations detected by the sensor 16 of device P1. In this method, the driving conditions can be appropriately set when the same substrate 100 that has been inspected for charge state by device P1 is to be picked up by the electrostatic chuck 15 of device P3.

[0118] As another example, the driving conditions for the electrostatic chuck 16 of device P1 are set based on the number of vibrations detected by the sensor 217 of device P2. It is presumed that each substrate 100 that is transported continuously will have a similar charge state. In this method, the driving conditions can be appropriately set when the electrostatic chuck 16 of device P1 picks up substrates 100 that are transported to device P1 after the substrates 100 whose charge state has been checked in device P2.

[0119] Similarly, the driving conditions for the electrostatic chuck 217 of device P2 are set based on the number of vibrations detected by the sensor 217 of device P3. In this method, the driving conditions can be appropriately set when the electrostatic chuck 217 of device P2 picks up a substrate 100 that has been transported to device P2 after its charge state has been inspected in device P3.

[0120] Similarly, the driving conditions for the electrostatic chuck 15 of device P1 are set based on the number of vibrations detected by the sensor 217 of device P3. In this method, the driving conditions can be appropriately set when the electrostatic chuck 15 of device P1 picks up a substrate 100 that has been transported to device P1 after its charge state has been inspected in device P3.

[0121] As yet another example, the driving conditions for the electrostatic chuck 15 of device P1 are set based on the number of vibrations detected by the sensor 16 of device P1 and the number of vibrations detected by the sensor 217 of device P2 for the same substrate 100. In this method, the driving conditions can be appropriately set when the electrostatic chuck 15 of device P1 picks up a substrate 100 that has been transported to device P1 after the substrate 100 has been inspected for charge state by devices P1 and P2, respectively. The driving conditions can be set, for example, from the average value of each detection result of the number of vibrations. By utilizing two detection results for the same substrate 100, the accuracy of estimating the charge state of the substrate 100 can be improved.

[0122] Similarly, for the same substrate 100, the driving conditions for the electrostatic chuck 211 of device P2 may be set based on the number of vibrations detected by the sensor 217 of device P2 and the number of vibrations detected by the sensor 16 of device P3.

[0123] Similarly, for the same substrate 100, the driving conditions for the electrostatic chuck 217 of device P2 may be set based on the number of vibrations detected by the sensor 16 of device P1 and the number of vibrations detected by the sensor 217 of device P2.

[0124] Alternatively, the driving conditions for at least one of the electrostatic chucks of devices P1 to P3 may be set based on the number of vibrations detected by the sensor 16 of device P1, the number of vibrations detected by the sensor 217 of device P2, and the number of vibrations detected by the sensor 16 of device P3 for the same substrate 100. By utilizing the results of three detections for the same substrate 100, the accuracy of estimating the charged state of the substrate 100 can be improved.

[0125] As another example, the film deposition apparatus 1 may not perform a charge state inspection, i.e., it may not detect the number of vibrations of the substrate 100 when the adsorption is released, and the charge state inspection may be performed only in the measuring device 201. In this case as well, the inspection results from the measuring device 201 may be used to set the driving conditions of the electrostatic chuck 15 of the film deposition apparatus 1.

[0126] <Fifth Embodiment> The film deposition system A may include a static elimination device for removing static electricity from the substrate 100 during the transport process. This prevents the substrate 100 from becoming excessively charged and being attracted to the electrostatic chuck.

[0127] <Example of static elimination device configuration 1: Example of installing a static elimination device in the transport chamber 302> Figure 20 shows an example of a static elimination device configuration 1. As an example of a static elimination device configuration 1, a configuration using a static elimination device (ionizer) 350 that can be used in a vacuum environment is described. In Figure 20, an example of a transport path for the substrate 100 before film deposition is shown, in which the static elimination device (ionizer) 350 is installed in the transport chamber 302. Specifically, an example is shown in which the static elimination device (ionizer) 350 is installed in front of (near) the gate valve 361 between the film deposition chamber 303 and the transport chamber 302.

[0128] The static elimination device (ionizer) 350 is a device that emits ultraviolet light that induces ionization, and as an example, it may be a device that employs a vacuum ultraviolet light ion generation method (photoionization). The static elimination device (ionizer) 350 can be connected to a vacuum chamber (for example, a transport chamber 302 in configuration example 1 of Figure 20) via a vacuum flange 352. Here, the vacuum flange 352 is a vacuum component that has a sealing function and can connect the vacuum chamber and the static elimination device (ionizer) 350.

[0129] The static elimination device (ionizer) 350 includes a vacuum ultraviolet light generation unit 351 (light source unit) and an irradiation unit 353 that irradiates vacuum ultraviolet light generated by the vacuum ultraviolet light generation unit 351, and vacuum ultraviolet light 354 is irradiated from the irradiation unit 353.

[0130] In the configuration shown in Figure 20, an example is shown in which static eliminators (ionizers) 350 are provided on both the upper and lower sides of the transport chamber 302. However, in a deposit-up type film deposition apparatus 1, when static elimination is performed on the upper surface of the substrate 100 (the suction surface of the electrostatic chuck), it is sufficient to provide at least one static eliminator (ionizer) 350 on the upper side of the transport chamber 302. The transport robot 302a can adjust the irradiation range of vacuum ultraviolet light 354 by controlling its position in the Z direction (vertical direction) to adjust the distance between the irradiation unit 353 and the suction surface 100a.

[0131] As the transport robot 302a transports the substrate 100 to the film deposition chamber 303, the suction surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the transport path of the substrate 100 before film deposition, thereby eliminating the potential (static electricity) charged on the substrate 100. To eliminate static electricity over a wider irradiation area simultaneously on the substrate transport path before film deposition, multiple static elimination devices (ionizers) 350 may be provided in the depth direction.

[0132] <Example of static elimination device configuration 2: Example of installing a static elimination device in buffer chamber 306> The location where the static elimination device (ionizer) 350 is installed is not limited to the transport chamber 302; the vacuum ultraviolet light 354 may also be irradiated onto the substrates 100 stored in the stocker for storing the substrates 100 or in the substrate storage shelves provided in the buffer chamber 306.

[0133] Figure 21 shows an example of a static elimination device configuration 2. As an example of a static elimination device configuration 2, Figure 21 shows an example in which a static elimination device (ionizer) 350 is installed in the buffer chamber 306A. The substrates 100 stored in the substrate storage shelf of the buffer chamber 306A are stored in a horizontal state with the surface to be processed (film-forming surface) facing downward in the direction of gravity (vertically downward), so the suction surface of the electrostatic chuck is the top surface of the substrate 100.

[0134] The configuration shown in Figure 21 illustrates an example where static elimination devices (ionizers) 350 are provided on both the upper and lower sides of the transport chamber 302. However, in a deposit-up type film deposition apparatus 1, when static elimination is performed on the upper surface of the substrate 100 (the adsorption surface of the electrostatic chuck), it is sufficient to provide at least one static elimination device (ionizer) 350 on the upper side of the buffer chamber 306.

[0135] In the configuration example 2 of Figure 21, multiple static eliminators (ionizers) 350 are provided horizontally to irradiate the substrate 100 with vacuum ultraviolet light 354 over a wide area while it is stored. However, providing multiple static eliminators 350 is not an essential configuration. For example, if the area of ​​the substrate 100 that requires static elimination can be eliminated with a single static eliminator (ionizer) 350, then at least one static eliminator (ionizer) 350 should be provided above the buffer chamber 306.

[0136] <Example of static elimination device configuration 3: Example of installing a static elimination device in the swivel chamber 307> Figure 22 shows an example in which a static elimination device (ionizer) 350 is installed in the rotating chamber 307A. When the transport robot 307a in the rotating chamber 307 moves horizontally and transports the substrate 100 to the transfer chamber 308A, the upper surface of the substrate 100 (the suction surface of the electrostatic chuck 211) is irradiated with vacuum ultraviolet light 354, and the potential (static electricity) charged on the substrate 100 can be eliminated. Multiple static elimination devices (ionizers) 350 may be installed in the depth direction to eliminate static electricity over a wider irradiation area simultaneously. The location of the static elimination device (ionizer) 350 is not limited to the rotating chamber 307 shown in Figure 22, but may also be in the transfer chamber 308.

[0137] In the configuration shown in Figure 22, similar to Figure 20, an example is shown in which static eliminators (ionizers) 350 are provided on both the upper and lower sides of the rotating chamber 307. However, in a deposit-up type film deposition apparatus 1, when static elimination is performed on the upper surface of the substrate 100, it is sufficient to provide at least one static eliminator (ionizer) 350 on the upper side of the rotating chamber 307. The transport robot 307a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling its position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the adsorption surface 100a.

[0138] <Example of static elimination device configuration 4: Example of installing a static elimination device on the side wall of the film deposition apparatus 1> Figure 23 shows an example in which an ionizer 350 is installed on the side wall of the vacuum chamber 3.

[0139] The substrate 100 is supported by a substrate support unit 6 that supports the peripheral edge of the substrate 100. In this state, the substrate 100 is not attracted to the electrostatic chuck 15. In this state, the static eliminator (ionizer) 350 is installed on the side wall of the vacuum chamber 3 so as to irradiate the substrate 100 with vacuum ultraviolet light 354 from a horizontal direction.

[0140] As shown in Configuration Examples 1 to 4 above, the substrate 10 can be destaticized by irradiating the substrate 100 with vacuum ultraviolet light 354 using the static elimination device (ionizer) 350.

[0141] <Example of static elimination device configuration 5: Example using electrostatic dissipative material: Protruding shape> Configuration Examples 1 to 4 describe configurations using an ionizer 350, but the configuration of the ionizer is not limited to these examples. For example, a material with electrostatic dissipative properties may be used. A material with electrostatic dissipative properties is a material that has the characteristic of dissipating charged electricity (electrostatic dissipative property). Here, "having electrostatic dissipative properties" means that the surface resistance value (Rs) measured according to the provisions of IEC International Electrotechnical Commission 61340-5-1, 5-2 is between 1 × 10⁴ Ω and less than 1 × 10¹¹ Ω. This numerical range of surface resistance value (Rs) is also called the electrostatic dissipative region. Hereafter, a material with electrostatic dissipative properties will also be called an electrostatic dissipative material.

[0142] As materials with electrostatic dissipative properties, for example, resins (e.g., thermosetting resins) or ceramics in the electrostatic dissipative region can be used. The electrostatic dissipative material can be molded into various shapes of parts, such as protruding shapes (pin shapes), two-dimensionally spreading sheet shapes (plate shapes), or roller shapes (cylindrical shapes), so as to facilitate contact with the static-dissipating member (adsorption surface 100a of the substrate 100).

[0143] Figure 24 shows an example of a static elimination device configuration 5. As an example of a static elimination device configuration 5, an example of a protruding (pin-shaped) component formed from an electrostatic dissipative material 504 is shown.

[0144] The transport chamber 302 is equipped with a static elimination robot 501 capable of moving the electrostatic dissipative material 504 vertically (up and down). The static elimination robot 501 has a static elimination hand 503 that holds protruding (pin-shaped) parts formed from the electrostatic dissipative material 504, and an actuator 502 that moves the static elimination hand 503 vertically. Multiple protruding (pin-shaped) parts formed from the electrostatic dissipative material 504 are arranged two-dimensionally within the holding surface of the static elimination hand 503 so as to contact the upper surface of the substrate 100 (the suction surface of the electrostatic chuck). In this embodiment, the static elimination robot 501 having the electrostatic dissipative material 504 is referred to as a static elimination device. The configuration shown in Figure 24 shows an example in which the static elimination robot 501 is provided on the upper side of the transport chamber 302, but it is not limited to this example, and for example, the static elimination robot 501 may be provided on the lower side of the transport chamber 302 so as not to interfere with the transport robot 302a.

[0145] The static elimination device (static elimination robot 501) operates the actuator 502 to lower the static elimination hand 503 vertically downward. As the static elimination hand 503 descends, the protruding (pin-shaped) components formed from the electrostatic dissipative material 504 come into contact with the suction surface 100a of the substrate 100, thereby eliminating static electricity from the substrate 100.

[0146] <Example of static elimination device configuration 6: Example using electrostatic dissipative material: Sheet shape> Figure 25 shows an example of a static elimination device configuration 6, which consists of a sheet-shaped (plate-shaped) component with a two-dimensional spread, formed from an electrostatic dissipative material 504.

[0147] Similar to Figure 24, the transport chamber 302 is equipped with a static elimination robot 501 capable of moving the electrostatic dissipative material 504 vertically (up and down). The configuration of the static elimination robot 501 is basically the same as in Figure 24, but in the configuration example 6 shown in Figure 25, the sheet-shaped part formed from the electrostatic dissipative material 504 is held by the static elimination hand 503 via a sheet holding member 505. The sheet-shaped part, which has a two-dimensional spread and is formed from the electrostatic dissipative material 504, is held within the holding surface of the static elimination hand 503 so that it can make surface contact with the upper surface of the substrate 100 (the suction surface of the electrostatic chuck).

[0148] The static elimination device (static elimination robot 501) operates the actuator 502 to lower the static elimination hand 503 vertically downward. As the static elimination hand 503 descends, a sheet-shaped component with a two-dimensional spread, formed from the electrostatic dissipative material 504, comes into contact with the substrate 100, thereby eliminating static electricity from the substrate 100.

[0149] <Example of static elimination device configuration 7: Example using electrostatic dissipative material: Roller shape> Figure 26 shows an example of a static elimination device configuration 7, which consists of a roller-shaped (cylindrical) component formed from an electrostatic dissipative material 504.

[0150] Similar to Figures 24 and 25, the transport chamber 302 is equipped with a static elimination robot 501 capable of moving roller-shaped (cylindrical) parts formed from the electrostatic dissipative material 504 vertically (up and down). The configuration of the static elimination robot 501 is basically the same as that in Figures 24 and 25, but in the configuration example 7 shown in Figure 26, the roller-shaped (cylindrical) parts formed from the electrostatic dissipative material 504 are positioned within the holding surface of the static elimination hand 503 so that they can make surface contact with the upper surface of the substrate 100 (the suction surface of the electrostatic chuck). A roller holding member 506 is provided on the holding surface of the static elimination hand 503. The roller holding member 506 rotatably holds the roller-shaped (cylindrical) parts formed from the electrostatic dissipative material 504. The static elimination hand 503 of the static elimination robot 501 holds a roller-shaped (cylindrical) part formed from an electrostatic dissipative material 504 via a roller holding member 506.

[0151] In Figure 26, the static elimination device (static elimination robot 501) operates the actuator 502 to lower the static elimination hand 503 vertically downward. As the static elimination hand 503 descends, the roller-shaped (cylindrical) component formed from the electrostatic dissipative material 504 comes into contact with the substrate 100, thereby eliminating the potential charge on the substrate 100. With the roller-shaped (cylindrical) component formed from the electrostatic dissipative material 504 in contact with the substrate 100, the transport robot 302a is moved horizontally, causing the roller-shaped (cylindrical) component formed from the electrostatic dissipative material 504 to roll on the substrate 100, thereby eliminating the static charge on the substrate 100.

[0152] In the configuration examples 5 to 7 of the static elimination device described in Figures 24 to 26, an example was described in which the static elimination robot 501 is installed in the transport chamber 302. However, the example is not limited to this, and the static elimination robot 501 may also be installed on the substrate transport path before film deposition, for example, in the buffer chamber 306, the turning chamber 307, the transfer chamber 308, etc.

[0153] <Example of static elimination device configuration 8: Example using electrostatic dissipative material: Substrate support part> Configuration Examples 5 to 7 of the static elimination device describe an example in which an electrostatic dissipative material 504 is provided on the static elimination hand 503 of the static elimination robot 501. Configuration Example 8 of the static elimination device describes an example in which the mounting portion 62 that contacts the film-forming surface of the substrate 100 and the contact portion 64 that contacts the upper surface of the substrate 100 (the adsorption surface of the electrostatic chuck) are made of an electrostatic dissipative material. Figures 27 and 28 show Configuration Example 8 of the static elimination device.

[0154] In Figures 27 and 28, the base portion 61 holds the mounting portion 62 and the contact portion 64. The actuator 160 moves the base portion 61 in the horizontal direction (X direction). In this embodiment, the mounting portion 62 and the contact portion 64, the base portion 61, and the actuator 160, which are made of an electrostatic dissipative material, are referred to as an electrostatic elimination device.

[0155] The actuator 160 moves the base portion 61, the mounting portion 62, and the contact portion 63 horizontally relative to the substrate 100 that has been brought into the vacuum chamber 3 of the film deposition apparatus 1. Figure 28 is a schematic diagram showing the operation of the base portion 61, the mounting portion 62, and the contact portion 63 in the static elimination device.

[0156] As shown in ST281 of Figure 28, the operation of the actuator 160 causes the left base portion 61, mounting portion 62, and contact portion 64 to move in the direction of arrow D1, thereby contacting the left edge of the substrate 100. Also, the operation of the actuator 160 causes the left base portion 61, mounting portion 62, and contact portion 64 to move in the direction of arrow D3, thereby separating them from the left edge of the substrate 100.

[0157] Similarly, the operation of the actuator 160 causes the right-side base portion 61, mounting portion 62, and contact portion 64 to move in the direction of arrow D2, thereby contacting the right edge of the substrate 100. Furthermore, the operation of the actuator 160 causes the right-side base portion 61, mounting portion 62, and contact portion 64 to move in the direction of arrow D4, thereby separating them from the right edge of the substrate 100.

[0158] The mounting portion 62 and contact portion 64, which are made of an electrostatic dissipative material, function as a pair of leaf springs (clips). The mounting portion 62 functions as a leaf spring biased vertically upward, and the contact portion 64 functions as a leaf spring biased vertically downward, with the upper and lower mounting portion 62 and contact portion 64 in contact when their biasing forces are balanced.

[0159] As shown in Figure 28, ST282, the left and right base portions 61 and the mounting portion 62 contact portion 64 move in the directions of arrows D1 and D2 and come into contact with the edges of the substrate 100. As the actuator 160 operates and the movement in the directions of arrows D1 and D2 progresses, the left edge of the substrate 100 is sandwiched between the left mounting portion 62 and contact portion 64, as indicated by the up and down arrows. Similarly, the right edge of the substrate 100 is sandwiched between the right mounting portion 62 and contact portion 64, as indicated by the up and down arrows.

[0160] The left and right mounting portions 62 and contact portions 64 are made of an electrostatically dissipative material. The left and right ends of the substrate 100 are sandwiched between the mounting portions 62 and contact portions 64, so that the upper surface of the substrate 100 comes into contact with the contact portions 64. As a component made of an electrostatically dissipative material, the contact portions 64 come into contact with the upper surface of the substrate 100 when supporting the periphery of the substrate 100. By the contact of the electrostatically dissipative material contact portions 64 with the substrate 100, the upper surface of the substrate 100 (the adsorption surface of the electrostatic chuck) can be electrostatically discharged.

[0161] In the configuration example 8 shown in Figures 27 and 28, the mounting portion 62 and the contact portion 64 are formed of an electrostatically dissipative material. However, when removing static electricity from the upper surface (adsorption surface) of the substrate 100, it is sufficient to form at least the contact portion 64 of an electrostatically dissipative material.

[0162] To facilitate the insertion of the left and right ends of the substrate 100 between the mounting portion 62 and the contact portion 64, a taper may be formed at the ends of the mounting portion 62 and the contact portion 64. Alternatively, the cross-sectional shape may be formed to have curvature rather than being limited to a taper. By forming a taper or curvature at the ends of the mounting portion 62 and the contact portion 64, it becomes easier to guide the ends of the substrate 100 between the mounting portion 62 and the contact portion 64 along the taper or curvature.

[0163] With both ends of the substrate 100 sandwiched between the left and right mounting portions 62 and contact portions 64, the actuator 65 moves the base portion 61 vertically upward, causing the substrate 100 to move vertically upward, and the upper surface of the substrate 100 is attracted to the electrostatic chuck 15, bringing the entire surface of the substrate 100 to contact the mask 101, and the film deposition process is performed. After the film deposition process is completed, the actuator 65 moves the base portion 61 vertically downward, causing the substrate 100 to move vertically downward, and then the actuator 160 moves the left and right mounting portions 62 and contact portions 64 in the directions of arrows D3 and D4, releasing the substrate 100.

[0164] <Sixth Embodiment> Next, an example of a manufacturing method for electronic devices will be described. Below, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of an electronic device. In this example, the film deposition block 301 illustrated in Figure 1 is provided in, for example, three locations on the manufacturing line.

[0165] First, let me explain the organic EL display device that will be manufactured. Figure 29(A) is an overall view of the organic EL display device 50, and Figure 29(B) is a diagram showing the cross-sectional structure of one pixel.

[0166] As shown in Figure 29(A), the display area 51 of the organic EL display device 50 has multiple pixels 52, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes.

[0167] In this context, a pixel refers to the smallest unit that enables the display of a desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is composed of a combination of multiple subpixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit different amounts of light from each other. A pixel 52 is often composed of a combination of three types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. A pixel 52 may contain at least one type of subpixel, preferably two or more types, and more preferably three or more types. For example, the subpixels constituting a pixel 52 may be a combination of four types of subpixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0168] Figure 29(B) is a schematic partial cross-sectional view of the line A and B in Figure 29(A). Pixel 52 has multiple subpixels on a substrate 53, each composed of an organic EL element comprising a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, or a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are organic layers. The red layer 56R, green layer 56G, and blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0169] Furthermore, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across multiple light-emitting elements 52R, 52G, and 52B, or they may be formed for each light-emitting element. That is, as shown in Figure 29(B), the hole transport layer 55 may be formed as a common layer across multiple sub-pixel regions, on which the red layer 56R, green layer 56G, and blue layer 56B may be formed separately for each sub-pixel region, and on top of that, the electron transport layer 57 and the second electrode 58 may be formed as a common layer across multiple sub-pixel regions.

[0170] Furthermore, an insulating layer 59 is provided between the first electrodes 54 to prevent short circuits between the adjacent first electrodes 54. In addition, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0171] In Figure 29(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers having hole blocking layers and electron blocking layers. In addition, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0172] Each of the red layer 56R, green layer 56G, and blue layer 56B may be formed as a single light-emitting layer or by stacking multiple layers. For example, the red layer 56R may consist of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. By providing layers below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0173] Although the example shown here is for the red layer 56R, a similar structure may be used for the green layer 56G or the blue layer 56B. Furthermore, the number of layers may be two or more. Additionally, layers of different materials, such as the light-emitting layer and the electron-blocking layer, may be stacked, or layers of the same material may be stacked, for example, by stacking two or more light-emitting layers.

[0174] Next, we will specifically describe an example of a method for manufacturing an organic EL display device. Here, we assume that the red layer 56R consists of two layers, a lower layer 56R1 and an upper layer 56R2, and that the green layer 56G and the blue layer 56B consist of a single light-emitting layer.

[0175] First, a circuit (not shown) for driving the organic EL display device and a substrate 53 on which the first electrode 54 is formed are prepared. The material of the substrate 53 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate 53 is used in which a polyimide film is laminated on a glass substrate.

[0176] A resin layer, such as acrylic or polyimide, is coated onto the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating. The resin layer is then patterned by lithography to form an insulating layer 59 in the area where the first electrode 54 is formed. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0177] A substrate 53 with an insulating layer 59 patterned on it is brought into the first deposition chamber 303, and a hole transport layer 55 is deposited as a common layer on the first electrode 54 of the display area. The hole transport layer 55 is deposited using a mask in which an opening is formed for each display area 51 that will ultimately become the panel portion of each organic EL display device.

[0178] Next, the substrate 53, on which the hole transport layer 55 has been formed, is brought into the second deposition chamber 303. The substrate 53 is aligned with the mask, the substrate is placed on the mask, and the red layer 56R is deposited on the portion of the substrate 53 where the red-emitting elements are placed (the region where the red subpixels are formed) above the hole transport layer 55. Here, the mask used in the second deposition chamber is a high-resolution mask in which openings are formed only in the multiple regions on the substrate 53 that will become the subpixels of the organic EL display device, specifically in the regions that will become the red subpixels. As a result, the red layer 56R, including the red light-emitting layer, is deposited only in the regions that will become the red subpixels among the multiple regions that will become the subpixels on the substrate 53. In other words, the red layer 56R is not deposited in the regions that will become the blue subpixels or the regions that will become the green subpixels among the multiple regions that will become the subpixels on the substrate 53, but is selectively deposited in the regions that will become the red subpixels.

[0179] Similar to the deposition of the red layer 56R, the green layer 56G is deposited in the third deposition chamber 303, and then the blue layer 56B is deposited in the fourth deposition chamber 303. After the deposition of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth deposition chamber 303. The electron transport layer 57 is formed as a common layer for the three color layers 56R, 56G, and 56B.

[0180] The substrate with the electron transport layer 57 formed on it is moved to the sixth deposition chamber 303, where the second electrode 58 is deposited. In this embodiment, each layer is deposited by vacuum deposition in the first to sixth deposition chambers 303. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth deposition chamber 303 may be deposited by sputtering. After that, the substrate with the second electrode 58 formed on it is moved to a sealing device, where a protective layer 60 is deposited by plasma CVD (sealing step), and the organic EL display device 50 is completed. Here, the protective layer 60 is formed by the CVD method, but it is not limited to this, and may be formed by the ALD method or the inkjet method.

[0181] In the first to sixth deposition chambers 303, film deposition is carried out using a mask with openings corresponding to the pattern of each layer to be formed. During film deposition, the substrate 53 and the mask are aligned, and then the substrate 53 is placed on the mask to perform the deposition. The alignment process in each deposition chamber is carried out as described above.

[0182] <Other Embodiments> The present invention can also be realized by supplying a program that implements one or more of the functions of the above-described embodiments to a system or device via a network or storage medium, and by having one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that implements one or more functions.

[0183] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]

[0184] 1 film deposition apparatus, 5 mask stand, 6 substrate support unit, 15 electrostatic chuck, 16 sensor, 100 substrate, 101 mask

Claims

1. An electrostatic chuck that holds the substrate to be deposited, A detection means for detecting the behavior of the substrate when the adsorption by the electrostatic chuck is released, The system includes a control means for setting the driving conditions of the electrostatic chuck based on the detection result of the detection means. A substrate processing apparatus characterized by the following:

2. A substrate processing apparatus according to claim 1, The detection means detects the number of vibrations of the substrate as a behavior of the substrate. A substrate processing apparatus characterized by the following:

3. A substrate processing apparatus according to claim 1, The detection means detects the position of the substrate relative to the electrostatic chuck as a behavior of the substrate. A substrate processing apparatus characterized by the following:

4. A substrate processing apparatus according to claim 1, The substrate support means supports the peripheral edge of the substrate that has been brought in and transfers the substrate to the electrostatic chuck, When the electrostatic chuck releases its hold, the peripheral edge of the substrate is supported by the substrate support means. A substrate processing apparatus characterized by the following:

5. A substrate processing apparatus according to claim 1, The substrate processing apparatus is a film deposition apparatus equipped with a deposition means for releasing a deposition material onto the substrate via a mask. A substrate processing apparatus characterized by the following:

6. A substrate processing apparatus according to claim 5, The aforementioned film deposition apparatus is a deposit-up type film deposition apparatus. A substrate processing apparatus characterized by the following:

7. A substrate processing apparatus according to claim 1, The substrate processing apparatus is a measuring device equipped with a measuring means for measuring the thickness of a film formed on the substrate adsorbed by the electrostatic chuck. A substrate processing apparatus characterized by the following:

8. A substrate processing apparatus according to claim 1, The substrate is equipped with a means for removing static electricity, A substrate processing apparatus characterized by the following:

9. A film deposition system for depositing a vapor-deposited material onto a substrate, It comprises a first device and a second device, The first device is A first electrostatic chuck that holds the substrate to be deposited, The system includes a first detection means for detecting the behavior of the substrate when the adsorption by the first electrostatic chuck is released, The second device is, It is equipped with a second electrostatic chuck that holds the substrate to be deposited, Based on the detection result of the first detection means, the driving conditions for the second electrostatic chuck are set. A film deposition system characterized by the following features.

10. A film deposition system according to claim 9, In the order in which the substrates are transported, the first device is the device that transports the substrates before the second device. A film deposition system characterized by the following features.

11. A film deposition system according to claim 9, In the order in which the substrates are transported, the second device is one in which the substrates are transported before the first device. A film deposition system characterized by the following features.

12. A film deposition system according to claim 9, The driving conditions for the second electrostatic chuck are those that occur when the second electrostatic chuck holds the same substrate as the substrate held by the first electrostatic chuck. A film deposition system characterized by the following features.

13. A film deposition system according to claim 9, The driving conditions for the second electrostatic chuck are those that occur when the second electrostatic chuck picks up a substrate different from the substrate picked up by the first electrostatic chuck. A film deposition system characterized by the following features.

14. A film deposition system according to claim 9, The second device is, The system includes a second detection means for detecting the behavior of the substrate when the adsorption by the second electrostatic chuck is released, Based on the detection result of the first detection means and the detection result of the second detection means, the driving conditions for the second electrostatic chuck are set. A film deposition system characterized by the following features.

15. A film deposition system according to claim 9, The aforementioned driving conditions are conditions relating to the voltage applied to the electrodes of the second electrostatic chuck. A film deposition system characterized by the following features.

16. A film deposition system according to claim 9, The substrate is equipped with a means for removing static electricity, A film deposition system characterized by the following features.

17. The process involves using an electrostatic chuck to hold the substrate to be coated, A detection step for detecting the behavior of the substrate when the adsorption by the electrostatic chuck is released, The system includes a setting step for setting the driving conditions of the electrostatic chuck based on the detection results of the detection step. A control method characterized by the following:

18. The process involves using a first electrostatic chuck to hold the substrate to be coated, A detection step for detecting the behavior of the substrate when the adsorption by the first electrostatic chuck is released, The system includes a setting step, which sets the driving conditions for a second electrostatic chuck that adsorbs the substrate to be film-formed, based on the detection results of the aforementioned detection step. A control method characterized by the following:

19. The invention comprises a film deposition step of forming a film on a substrate using the film deposition apparatus described in claim 5. A method for manufacturing an electronic device characterized by the following:

20. The system comprises a film deposition step of forming a film on a substrate using the film deposition system described in claim 9. A method for manufacturing an electronic device characterized by the following:

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