Antenna for inductively coupled plasma excitation, antenna unit for inductively coupled plasma excitation, and plasma processing apparatus.
The antenna design with a conductive plate and impedance adjustment sections enhances magnetic field generation and uniformity, addressing inefficiencies in existing plasma excitation antennas for improved semiconductor processing.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2026-04-28
- Publication Date
- 2026-07-02
AI Technical Summary
Existing inductively coupled plasma excitation antennas suffer from inefficiencies in magnetic field generation and non-uniformity of magnetic field strength due to inductive coupling and central openings, which affect plasma processing in semiconductor manufacturing.
The antenna design incorporates a conductive plate positioned above the coil assemblies, with impedance adjustment sections and a conductive cylinder, to minimize magnetic field leakage and balance current distribution, enhancing magnetic field generation and uniformity.
This design improves the efficiency and circumferential uniformity of the magnetic field strength, leading to more effective plasma processing in semiconductor treatments such as etching and film deposition.
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