Photomodifier and photomodifier

Abstract

To provide a photomodification apparatus that improves efficiency while maintaining uniformity in the photomodification process. [Solution] The processing chamber of the photomodification apparatus for a workpiece has a mounting section for placing the workpiece, which is positioned opposite the light source with a gas flow space in between, a plurality of gas supply ports, and at least one gas outlet. The plurality of gas supply ports include process gas supply ports that supply a process gas capable of modifying the workpiece by irradiation with ultraviolet light to the gas flow space, and buffer gas supply ports that supply a buffer gas that absorbs ultraviolet light less readily than the process gas to the gas flow space. The buffer gas supply ports are positioned closer to the light source than the process gas supply ports in the first direction.

Description

[Technical Field]

[0001] This invention relates to a photomodification apparatus and a photomodification method for modifying the surface of an object to be treated. [Background technology]

[0002] A photomodification method has been known for some time, which involves using ultraviolet light to activate a specific raw material gas to generate radicals, and then supplying these radicals to a workpiece to modify the surface of the workpiece.

[0003] For example, Patent Document 1 describes a photomodifying apparatus that uses a light source emitting ultraviolet light to activate a raw material gas containing an organic compound having at least one of oxygen atoms or nitrogen atoms, and modifies the surface of an object to be treated with the activated raw material gas. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] International Publication No. 2022 / 168688 [Overview of the project] [Problems that the invention aims to solve]

[0005] A light source generates heat as it emits light, transferring that heat to the object being treated. Since the heat emitted by the light source is not necessarily uniform within the light source, the amount of heat transferred to the object may differ, for example, between the center and the edges of the light source. Differences in heat distribution affect the amount of activated chemical species such as radicals generated by the light, as well as the reactivity of the resin on the surface of the object being treated. Therefore, variations in heat distribution on the surface of the object being treated are undesirable because they lead to variations in the photomodification treatment of the object being treated.

[0006] To mitigate variations in heat intensity, it is advisable to move the workpiece away from the light source. However, when the workpiece is moved away from the light source, ultraviolet light is absorbed by the process gas in the optical path before it reaches the vicinity of the workpiece, resulting in a decrease in ultraviolet light intensity (i.e., the light intensity of ultraviolet light on the surface of the workpiece). A decrease in illuminance reduces the efficiency of the photomodification process.

[0007] Therefore, the objective is to provide a photomodification apparatus and a photomodification method that improve efficiency while maintaining uniformity of the photomodification process. [Means for solving the problem]

[0008] The present invention relates to a photomodification apparatus for a workpiece, A light source that emits ultraviolet light, It comprises a processing chamber, The processing chamber is In the first direction, a mounting section for placing the object to be processed is arranged opposite the light source with a gas flow space in between, Multiple gas supply ports for supplying gas to the aforementioned gas flow space, It has at least one gas outlet for discharging the gas flowing through the gas passage space from the gas passage space, The aforementioned plurality of gas supply ports are A process gas supply port for supplying a process gas capable of modifying the workpiece by irradiation with ultraviolet light into the gas flow space, It has a buffer gas supply port for supplying a buffer gas that absorbs ultraviolet light less than the process gas to the gas flow space, The buffer gas supply port is positioned closer to the light source than the process gas supply port in the first direction.

[0009] In the above photomodifier, two flows are formed within the gas flow space. The two flows are a process gas flow from the process gas supply port to at least one gas outlet, and a buffer gas flow from the buffer gas supply port to at least one gas outlet. Both the process gas flow and the buffer gas flow flow between the light source and the object to be processed placed on the aforementioned mounting section, and so flow across the optical axis of the ultraviolet light when the light source is lit. At that time, the process gas flow flows relatively closer to the object to be processed compared to the buffer gas flow, and the buffer gas flow flows relatively closer to the light source compared to the process gas flow.

[0010] In this specification, the "optical axis" coincides with the central ray of the light beam that emanates from the light source and travels towards the object to be processed placed on the mounting section. The "optical axis" is an axis that passes through the center of the light emission surface and is perpendicular to the mounting surface. The "optical axis" may also be considered as a line connecting the mounting surface on which the object to be processed is placed in the mounting section and the center of the light emission surface of the light source facing the aforementioned mounting surface. The photomodification device may be equipped with multiple ultraviolet light sources as light sources (for example, solid light sources such as LEDs or discharge lamps). In this case, the "multiple ultraviolet light sources" may be considered as a single "light source".

[0011] The ultraviolet light emitted from the light source passes through the buffer gas flow and then reaches the process gas flow. Since the buffer gas absorbs ultraviolet light less readily than the process gas, the ultraviolet light does not attenuate significantly even when it passes through the buffer gas flow. When the ultraviolet light passes through the process gas flow, the process gas absorbs the ultraviolet light, generating activating chemical species such as radicals, which modify the workpiece located near the process gas. As a result, even if the optical path of the ultraviolet light is long, the attenuation of the ultraviolet light is suppressed, and the efficiency of the photomodification process can be increased. Since the distance from the light source to the workpiece can be long, the variation in the amount of heat transmitted from the light source is reduced, and the uniformity of the photomodification process is increased.

[0012] When using a gas containing organic compounds as the process gas, the above-mentioned photomodifier can achieve further effects. If the entire gas flow space is filled with a gas containing organic compounds, photodegradation products may adhere to the light-transmitting part, causing the surface of the light-transmitting part to become cloudy and potentially attenuating the transmitted light. However, in the above-mentioned photomodifier, even if a gas containing organic compounds is used as the process gas, a buffer gas that does not contain organic compounds can be used in contact with the light-transmitting part, thus suppressing the adhesion of the photodegradation products to the surface of the light-transmitting part. Therefore, the irradiation surface is less likely to become cloudy, and the amount of light transmitted can be maintained. The term "light-transmitting part" includes the surface of a light-transmitting member such as the light extraction surface of the light source or the light-transmitting window surface.

[0013] The wavelength of ultraviolet light used is selected according to the nature of the photomodification treatment, such as the type of process gas and the material being treated. However, among ultraviolet light, light with a relatively short wavelength, for example, ultraviolet light that shows intensity in the wavelength range of at least 205 nm or less, is absorbed more by the process gas, and therefore the effect of the photomodification device is greater. Furthermore, if the process gas contains oxygen molecules, water molecules, or organic compounds containing oxygen atoms, using ultraviolet light that shows intensity in the wavelength range of at least 205 nm or less has the advantage of efficiently decomposing the process gas contents.

[0014] The process gas supply port may be positioned opposite the at least one gas outlet, straddling the gas flow space and crossing the optical axis. Similarly, the buffer gas supply port may be positioned opposite the at least one gas outlet, straddling the gas flow space and crossing the optical axis. When the process gas supply port is positioned opposite the at least one gas outlet, the process gas flow becomes more linear, thus forming a more stable flow. The same applies to the buffer gas.

[0015] The light source is located outside the processing chamber. The processing chamber has a light-transmitting section that guides light from the light source into the interior of the processing chamber. The configuration may be provided by the optical processing device. Here, "the light-transmitting section that guides the light from the light source into the processing chamber" is a light-transmitting window surface fitted into the wall of the processing chamber.

[0016] The at least one gas outlet is, A process gas outlet that primarily discharges process gas, wherein the process gas outlet is located between the light source and the previously described mounting part in the first direction, A buffer gas outlet that primarily discharges buffer gas may be provided, wherein the buffer gas outlet is located between the light source and the process gas outlet in the first direction. Here, "primarily discharges process gas" means that the discharge amount of process gas is greater than the discharge amount of buffer gas. However, in the case of a process gas outlet, it is desirable that 70 vol% or more of the total gas discharged from the outlet is process gas, and preferably 90 vol% or more is process gas. In the case of a buffer gas outlet, it is desirable that 70 vol% or more of the total gas discharged from the outlet is buffer gas, and preferably 90 vol% or more is buffer gas.

[0017] At least one of the process gas supply port and the buffer gas supply port may have a slit-shaped opening or a planar opening.

[0018] Of the at least one of the aforementioned gas outlets, at least one gas outlet may have a planar opening.

[0019] The processing chamber may also be provided with a gas partition plate extending from the inner wall between the process gas supply port and the buffer gas supply port toward the central portion of the gas flow space.

[0020] The mounting portion may protrude toward the center of the gas flow space, or may be configured to protrude toward the center of the gas flow space.

[0021] The gas passage space may also be provided with a backflow prevention plate positioned between it and the at least one gas outlet to prevent backflow of the buffer gas.

[0022] The photomodifier may be equipped with at least one of the following control valves: a first control valve capable of adjusting the supply amount of the process gas, and a second control valve capable of adjusting the supply amount of the buffer gas.

[0023] The photomodifier includes a control unit, The control unit may control at least one of the first and second control valves so that the representative flow velocity of the buffer gas is 0.1 times or more and 10 times or less the representative flow velocity of the process gas. Alternatively, the representative flow velocity of the buffer gas may be 0.2 times or more and 5 times or less the representative flow velocity of the process gas.

[0024] The present invention relates to a method for photomodifying an object to be treated, The aforementioned photomodification method is, By emitting ultraviolet light from the light source, In the first direction, ultraviolet light is incident on the object to be processed, which is positioned opposite the light source with a gas flow space in between. The aforementioned gas flow space is The process gas flow that constitutes the process gas flow used to modify the material to be processed, The system includes a buffer gas flow that flows in the first direction closer to the light source than the process gas flow, wherein the buffer gas constituting the buffer gas flow is a gas that absorbs ultraviolet light less readily than the process gas.

[0025] When the ultraviolet light is incident on the object to be processed, the representative flow velocity of the buffer gas may be 0.1 times or more and 10 times or less than the representative flow velocity of the process gas, or 0.2 times or more and 5 times or less.

[0026] The process gas is a gas containing at least one of an organic compound, oxygen, and water vapor. The buffer gas may be nitrogen gas.

[0027] The process gas is air. The buffer gas may be nitrogen gas. [Effects of the Invention]

[0028] This makes it possible to provide a photomodification apparatus and photomodification method that improve efficiency while maintaining uniformity of the photomodification process. [Brief explanation of the drawing]

[0029] [Figure 1] This is a diagram showing a photomodifier. [Figure 2A] Figure 1 is a perspective view of the processing chamber inside the photomodifier. [Figure 2B] This is a view from plane A1 in the -X direction in Figure 2A. [Figure 3] Figure 1 is a control block diagram of the photomodifier. [Figure 4] This is a diagram showing a photomodifier according to the second embodiment. [Figure 5A] This is a diagram showing a photomodifier according to the third embodiment. [Figure 5B] This diagram shows a modified example of the photomodifier according to the third embodiment. [Figure 6A] This figure shows the photomodification treatment according to the fourth embodiment. [Figure 6B] This is an enlarged view of the main part of Figure 6A. [Figure 7] This is a diagram showing a photomodifier according to the fifth embodiment. [Figure 8A] This is a top view of the photomodifier according to the sixth embodiment. [Figure 8B] This is a cross-sectional view taken along line A2-A2 in Figure 8A. [Figure 8C] This is a cross-sectional view taken along line A3-A3 in Figure 8A. [Figure 9A] This is a top view of the photomodifier according to the seventh embodiment. [Figure 9B] This is a cross-sectional view of A4-A4 in Figure 9A. [Figure 9C] This is a cross-sectional view from A5-A5 in Figure 9A. [Modes for carrying out the invention]

[0030] Each embodiment of the above-described invention will be explained with reference to the drawings. It should be noted that the drawings disclosed herein are for illustrative purposes only. That is, the dimensional ratios in the drawings do not necessarily correspond to the actual dimensional ratios, and the dimensional ratios do not necessarily correspond between the drawings.

[0031] In the following, the drawings will be described with reference to the XYZ coordinate system as appropriate. In this specification, when expressing direction, positive and negative directions are distinguished, and are indicated with a positive or negative sign, such as "+X direction" and "-X direction". When expressing direction without distinguishing between positive and negative directions, it is simply described as "X direction". That is, in this specification, when simply described as "X direction", both "+X direction" and "-X direction" are included. The same applies to the Y direction and Z direction. In the embodiments described below, the direction in which the optical axis of the light emitted by the light source extends is the Z direction. Ultraviolet light travels in the -Z direction.

[0032] <First Embodiment> [Photomodifier] Referring to Figure 1, a first embodiment of a photomodification apparatus for modifying the surface of an object to be treated will be described. The photomodification apparatus 100 includes a light source unit 7 having a light source 3 that emits ultraviolet light L1, and a processing chamber 1 having a gas flow space 2 inside. The object to be treated 9 is placed inside the processing chamber 1. Note that the object to be treated 9 itself is not a component of the processing chamber 1. The ultraviolet light L1 reaches the processing chamber 1 from the light source unit 7 by passing through the light-transmitting member 15.

[0033] The processing chamber 1 will now be described. The processing chamber 1 has a gas flow space 2 that can be isolated from the environment in which the photomodifier 100 is located, gas supply ports (4a, 4b) for supplying gas to the gas flow space 2, and a gas outlet 5 for discharging the gas flowing through the gas flow space 2 from the gas flow space 2. The gas supply ports (4a, 4b) and the gas outlet 5 are positioned opposite each other so as to straddle the gas flow space 2 and cross the emitted ultraviolet light L1. In Figure 1, the beam of ultraviolet light L1 is shown by a dashed line. The area between the two dashed lines represents the beam of light. This beam of light represents a beam of light with sufficient intensity to activate the process gas and modify the material to be processed.

[0034] The system has at least two gas supply ports (4a, 4b). The first gas supply port is the process gas supply port 4a. The process gas supply port 4a is located between the light source 3 and the mounting section on which the workpiece 9 is placed, in the Z direction, which is the direction in which the optical axis Lox extends, and is positioned closer to the mounting section than the light source 3. In the processing chamber 1 shown in Figure 1, the bottom surface of the processing chamber 1 is the mounting section. The process gas PG supplied from the process gas supply port 4a is a gas capable of modifying the workpiece 9 by irradiation with ultraviolet light L1. Details of the process gas PG will be described later.

[0035] The second gas supply port is the buffer gas supply port 4b. In the Z direction, which is the direction in which the optical axis Lox extends, the buffer gas supply port 4b is positioned closer to the light source 3 than the process gas supply port 4a. The buffer gas BG is a gas in which light at wavelengths showing peak intensity in the emission spectrum of ultraviolet light L1 is less absorbed than that of the process gas PG. Details of the buffer gas BG will be described later.

[0036] The process gas inlet 4a is connected to a process gas source (not shown) by a gas supply pipe. A first control valve 14a and a first flow meter 13a are located in the gas supply pipe between the process gas inlet 4a and the process gas source, allowing adjustment of the amount of process gas PG supplied. The amount of process gas PG supplied is adjusted using the first control valve 14a and the first flow meter 13a.

[0037] The buffer gas supply port 4b is connected to a buffer gas supply source (not shown) by a gas supply pipe. A second control valve 14b, which can adjust the supply amount of buffer gas BG, and a second flow meter 13b are located in the gas supply pipe between the buffer gas supply port 4b and the buffer gas supply source. The supply amount of buffer gas BG is adjusted using the second control valve 14b and the second flow meter 13b.

[0038] In this embodiment, the shape of the gas supply port (4a, 4b) is a small circular gas flow port formed by connecting a round pipe to the processing chamber 1. However, there are no restrictions on the shape and size of the gas supply port (4a, 4b), and it may be, for example, a slit-shaped gas flow port that is long in one direction. The same applies to the gas outlet 5; there are no restrictions on the shape and size of the gas outlet 5.

[0039] In the gas flow space 2, the process gas supply port 4a is connected to the process gas flow F PG The buffer gas supply port 4b forms the buffer gas flow F BG Forms a process gas flow F. PG This is formed from the process gas supply port 4a toward the gas outlet 5. Process gas flow F PG The direction of travel and the buffer gas flow F BG The direction of travel should form an angle of 70 degrees to 110 degrees with respect to the direction in which the optical axis Lox of the ultraviolet light L1 emitted from the light source 3 extends. In this embodiment, the process gas flow F PG Direction of propagation and buffer gas flow F BG The direction of propagation forms an angle of approximately 90 degrees (between 85 and 95 degrees) with respect to the optical axis Lox of ultraviolet light L1.

[0040] The ultraviolet light L1 reaches the process gas flow F after passing through the buffer gas flow F. BG After passing through the buffer gas flow F, it reaches the process gas flow F. PG When the ultraviolet light L1 passes through the buffer gas flow F, since it is difficult for the ultraviolet light L1 to be absorbed by the buffer gas flow F, the attenuation of the light intensity of the ultraviolet light L1 can be suppressed. On the other hand, when the ultraviolet light L1 passes through the process gas flow F, the ultraviolet light L1 is absorbed by the process gas flow F, generating active chemical species such as radicals that modify the object to be processed 9. Thereby, even if the optical path of the ultraviolet light L1 becomes longer, by suppressing the attenuation of the ultraviolet light L1, the illuminance on the surface of the object to be processed 9 is increased, improving the efficiency of the photo-modification treatment.

[0041] The process gas supply port 4a is preferably arranged so as to be separated from the buffer gas supply port 4b so that the process gas flow F does not contact the buffer gas flow F as much as possible. And it is preferable to prevent the generation of turbulent flow even if the process gas flow F contacts the buffer gas flow F. That is, it is preferable that the process gas flow F and the buffer gas flow F each form a laminar flow. Even if turbulent flow occurs, it is preferable that the amount of the turbulent flow is a small amount as viewed from the entire gas flow.

[0042] The direction of the process gas flow F and the direction of the buffer gas flow F are preferably parallel to each other. However, after passing through the light beam of the ultraviolet light L1 or after crossing above the object to be processed 9, the direction of the process gas flow F and the direction of the buffer gas flow F do not have to be parallel to each other, and the process gas flow F may contact the buffer gas flow F, and the process gas flow F and the buffer gas flow F BG ​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​This may form turbulence.

[0043] Process gas flow F PG and buffer gas flow F BG It is desirable that there be an interface between these two flows. Furthermore, it is preferable that this interface is planar. Such a planar interface is represented as a virtual line Vf in Figure 1. Process gas flow F PG and buffer gas flow F BG To prevent them from intersecting, the gas flow (F) on the virtual line Vf PG or F BG The typical flow velocity of the process gas flow F is PG The typical flow velocity of process gas PG at the center and the buffer gas flow F BG It is smaller than the representative flow velocity of buffer gas BG at the center. In other words, along the virtual line Vf, the flow of process gas PG and buffer gas BG is smaller than the process gas flow F from the process gas supply port 4a. PG Alternatively, the buffer gas flow F from the buffer gas supply port 4b. BG It is preferable that the process gas flow F is gentler. PG Buffer gas flow F BG This can suppress the generation of turbulence caused by the intersection of the gases. Increasing the spacing between the process gas supply port 4a and the buffer gas supply port 4b can also reduce the process gas flow F PG Buffer gas flow F BG This is effective in suppressing the generation of turbulence caused by intersections.

[0044] The method for calculating the representative gas flow velocity will be explained with reference to Figures 2A and 2B. Figure 2A is a perspective view of the processing chamber 1 of the photoreform apparatus 100 shown in Figure 1. Figure 2B is a cross-sectional view of Figure 2A at plane A1 (plane A1 is a plane parallel to the YZ plane and contains the optical axis Lox), and is a view from plane A1 in the -X direction. Process gas flow F PG and buffer gas flow F BG The boundary between these two points is represented as a virtual plane Vs in Figure 2A and as a virtual line Vg in Figure 2B. Both the virtual line Vf and the virtual line Vg lie within the virtual plane Vs.

[0045] Process gas flow F PG Representative flow velocity U PG We will examine the following. Representative flow velocity U PG This is the length (in m) that the process gas PG travels within the processing chamber 1 per unit time (e.g., per second), and the representative flow velocity U PG It is used as an indicator for flow control. And the representative flow velocity U PG (Unit: m / s) is the volume Q of process gas PG flowing into the processing chamber 1 per unit time (e.g., in 1 second). PG (Unit: m) 3 The cross-sectional area S of the section occupied by the process gas PG in the processing chamber 1 ( / s) PG (Unit: m) 2 It can be calculated by dividing by ). That is, the process gas flow F is given by the following equation (1). PG Representative flow velocity U PG It is possible to find this. U PG (m / s) = Q PG (m 3 / s) / S PG (m 2 ) ···(1)

[0046] Volume Q of process gas PG flowing into processing chamber 1 per unit time PG The (supply amount) can be determined using the first flow meter 13a shown in Figure 1. The cross-sectional area S of the area occupied by the process gas PG. PG This refers to the Z-direction length L in the area occupied by the process gas PG. PG It can be calculated by the product of (unit: m) and the Y-direction length D (unit: m). That is, the cross-sectional area S of the area occupied by the process gas PG is calculated by the following equation (2). PG It is possible to find this. S PG (m 2 ) = L PG (m) × D(m) ... (2)

[0047] Note that the length L in the Z direction PGL is the distance from the surface of the object to be processed 9 to the imaginary line Vg. If the distance from the surface of the object to be processed 9 to the imaginary line Vg is not uniform, the minimum value of the distance from the surface of the object to be processed 9 to the imaginary line Vg is L. PG This may also be done. Furthermore, as in other embodiments described later, if the object to be processed 9 is placed on the mounting section, L PG The value of becomes smaller.

[0048] Similarly, buffer gas flow F BG Representative flow velocity U BG This refers to the length (in meters) that the buffer gas BG travels through the processing chamber 1 in a unit of time (e.g., in 1 second), and the representative flow velocity U BG It is used as an indicator for flow control. And the buffer gas flow F BG Representative flow velocity U BG (Unit: m / s) is the volume Q of buffer gas BG flowing into the processing chamber 1 per unit time (e.g., in 1 second). BG (Unit: m) 3 The cross-sectional area S of the section occupied by buffer gas BG in the processing chamber 1 ( / s) BG (Unit: m) 2 It can be calculated by dividing by ). That is, the buffer gas flow F is given by equation (3) below. BG Representative flow velocity U BG It is possible to find this. U BG (m / s) = Q BG (m 3 / s) / S BG (m 2 ) ···(3)

[0049] Volume Q of buffer gas BG flowing into processing chamber 1 per unit time BG The (supply amount) can be determined using the second flow meter 13b shown in Figure 1. The cross-sectional area S of the compartment occupied by the buffer gas BG. BG This refers to the Z-direction length L in the area occupied by the buffer gas BG. BG It can be calculated by the product of (unit: m) and the Y-direction length D (unit: m). That is, the cross-sectional area S of the area occupied by buffer gas BG is calculated by the following equation (4). BGcan be obtained. S BG (m 2 ) = L BG (m)×D(m) ···(4)

[0050] In addition, regarding the Z-direction length L BG if the distance from the virtual line Vg to the ceiling in the internal space of the processing chamber 1 is not uniform, the distance from the virtual line Vg to the ceiling in the internal section of the processing chamber 1 on the optical axis may be taken as L BG as well.

[0051] The Z-direction position of the virtual line Vg (i.e., the Z-direction position of the boundary between the process gas flow F PG and the buffer gas flow F BG ) varies depending on the ratio of the volume Q PG of the process gas PG flowing into the processing chamber 1 per unit time (e.g., within 1 second) to the volume Q BG of the buffer gas BG. However, as shown in FIG. 2B, the Z-direction position of the virtual line Vg may be regarded as a position including the midpoint CP between the height of the center of the process gas supply port 4a and the height of the center of the buffer gas supply port 4b.

[0052] The representative flow velocity U BG of the buffer gas flow F BG is preferably 0.1 times or more, and more preferably 0.2 times or more, of the representative flow velocity U PG of the process gas flow F PG . The representative flow velocity U BG of the buffer gas flow F BG is preferably 10 times or less, and more preferably 5 times or less, of the representative flow velocity U PG of the process gas flow F PG . Thus, the representative flow velocity U BG of the buffer gas flow F BG is preferably 0.1 times or more and 10 times or less, and more preferably 0.2 times or more and 5 times or less, of the representative flow velocity U PG of the process gas flow F PG .

[0053] Figure 3 is a control block diagram of the photomodifier 100. The photomodifier 100 may have a control unit 8. The control unit 8 calculates the supply amount of process gas PG and buffer gas BG to achieve the above-mentioned representative flow velocity of the gas (PG, BG) in the gas flow space 2, and adjusts at least one of the first control valve 14a and the second control valve 14b based on the calculated supply amounts of process gas PG and buffer gas BG, and the measured values ​​of the first flow meter 13a and the second flow meter 13b. In addition to the processor for the above calculation, the control unit 8 also calculates the supply amounts of process gas PG and buffer gas BG and their representative flow velocities (U PG ,U BG The control unit 8 may have a memory unit that stores a function or data table that describes the relationship with ). The control unit 8 may also control other drive mechanisms provided by the photomodifier 100.

[0054] The gas outlet 5 may be connected to a negative pressure source (not shown) for drawing gas from the gas flow space 2. When connected to a negative pressure source, process gas flow F PG and buffer gas flow F BG The suction force should be adjusted to promote the formation of laminar flow. The suction force may be adjusted by adjusting the exhaust capacity of the vacuum pump that constitutes the negative pressure source, or by adjusting the conductance of the piping between the negative pressure source and the gas flow space 2. Even without a negative pressure source, the gas in the gas flow space 2 will be naturally discharged by supplying the process gas PG and buffer gas BG to the gas flow space 2. Therefore, it is not essential that the gas outlet 5 is connected to a negative pressure source.

[0055] The gas flow space 2 should be at approximately the same pressure as the atmosphere in which the photoreformer 100 is located. Approximately the same pressure means that it is between half and twice the atmospheric pressure (in Pa) of the atmosphere in which the photoreformer 100 is located. For example, if the atmospheric pressure of the atmosphere in which the photoreformer 100 is located is 10 5 When the pressure is Pa (approximately 1 atmosphere), the pressure in gas flow space 2 is 5 × 10⁻⁶. 4 ~2×10 5It is preferable that the pressure be Pa. Even when using a negative pressure source to draw in the process gas PG and buffer gas BG, it is preferable to set the pressure to be between 1 / 10 and 10 times the atmospheric pressure (in Pa) of the atmosphere in which the photomodifier 100 is located.

[0056] [Object to be processed] Specific examples of the workpiece 9 include resins, metals, ceramics, and paper. Surface treatment can bring about chemical changes such as hydrophilization, hydrophobicity, oxidation, and reduction, as well as physical changes such as planarization, roughening, and porosity, on the surface of the workpiece 9. Specific examples of the workpiece 9 include fluororesins used in various applications such as medical equipment and high-frequency circuit boards, and printed circuit boards with metal oxide films on their surfaces.

[0057] Examples of surface modification treatments include removing components adhering to the surface of the object to be treated 9 (cleaning), changing the chemical or physical properties of the surface of the object to be treated 9 (surface modification), and forming a new layer on the surface of the object to be treated (film formation). However, surface modification treatments are not limited to these examples. If the surface of the object to be treated 9 is a fluororesin, surface modification treatment can change the surface of the fluororesin from hydrophobic to hydrophilic. This can, for example, increase the bonding strength between the fluororesin and other materials. If the object to be treated 9 is a printed circuit board having a metal oxide film on its surface, surface modification treatment can reduce the metal oxide film. This can increase the conductivity of the wiring portion of the printed circuit board or improve the bonding strength of solder.

[0058] [light source] A light source unit 7 having a light source 3 inside will be described. The light source 3 is located in a light source chamber 12, which is the internal space of the light source unit 7. The light source chamber 12 is preferably filled with an inert gas (for example, nitrogen gas). As will be described in detail later, the ultraviolet light L1 emitted by the light source 3 used in this embodiment is light that shows a peak intensity in the wavelength range of at least 205 nm or less in the emission spectrum of the light source 3. The ultraviolet light L1 activates the process gas PG, generating radicalized substances, and these radicalized substances modify the surface of the workpiece 9.

[0059] In this specification, "ultraviolet light exhibiting peak intensity in a wavelength range of at least 205 nm" refers to light having a maximum light intensity value of 205 nm or less in its emission spectrum. Such light includes, for example, light exhibiting an emission spectrum in which the peak emission wavelength showing maximum intensity in broad-wavelength light is 205 nm or less, and light exhibiting an emission spectrum in which, if it has emission wavelengths showing multiple maximum intensities (multiple peaks), one of the peaks is included in the wavelength range of 205 nm or less.

[0060] In this embodiment, a xenon excimer lamp with a peak emission wavelength of 172 nm is used as the light source 3. The light emitted from this excimer lamp is readily absorbed by organic compounds, generating many radicals of the organic compounds. Furthermore, the light emitted from this excimer lamp is not readily absorbed by inert gases. In Figure 1, the light source 3 is shown to consist of a single lamp. However, as described above, the light source 3 may consist of multiple lamps.

[0061] [Gas supplied to a gas flow space] Table 1 shows examples of process gas PG and buffer gas BG combinations used in this embodiment.

[0062] [Table 1]

[0063] Let's explain combination number C1. An organic compound-containing gas is used as the process gas (PG), and nitrogen gas is used as the buffer gas (BG).

[0064] This section describes the process of using gases containing organic compounds. The organic compounds in the gas are radicalized using ultraviolet light L1, and the resulting radicalized organic compounds are brought into contact with the object to be treated. A radical is an atom or molecule with unpaired electrons. The number of carbon atoms in the organic compound molecule is preferably 10 or less, and more preferably 4 or less.

[0065] The organic compound in the process gas PG may be an organic compound consisting only of carbon atoms and hydrogen atoms. The organic compound in the process gas PG may also be an organic compound containing at least one of oxygen atoms and nitrogen atoms in its chemical structure, in addition to carbon atoms and hydrogen atoms. The organic compound in the process gas PG may also be an organic compound containing multiple bonds in its chemical structure.

[0066] If an organic compound in the process gas PG contains an oxygen atom in its chemical structure, the organic compound produced by the photoreaction will also contain an oxygen atom. Since organic compounds containing oxygen atoms are polar, they have high boiling points. As a result, if the organic compound used as a raw material contains an oxygen atom, the boiling points of at least one of the organic compounds—the raw material and the produced organic compound—become particularly prone to adhering to or re-adhering to the light-transmitting member 15. However, in this embodiment, since a buffer gas BG, rather than the process gas PG, is present around the light-transmitting member 15, the adhesion of organic compounds to the light-transmitting member 15 is suppressed. Examples of organic compounds containing oxygen atoms in addition to carbon and hydrogen atoms include organic compounds containing at least one of a hydroxyl group, a carbonyl group, and an ether bond. Furthermore, alcohols, ketones, aldehydes, and carboxylic acids are suitably used as process gas PG. Examples of alcohols include methanol, ethanol, or propanol. When an organic compound molecule containing an oxygen atom is irradiated with ultraviolet light L1, it generates a radical consisting of a carbon atom, a hydrogen atom, and an oxygen atom (sometimes denoted as a "{CxHyOz} radical"), and a hydrogen radical. The {CxHyOz} radical includes both a radicalized C and a radicalized O.

[0067] If an organic compound in the process gas PG contains a nitrogen atom in its chemical structure, the organic compound produced by the photoreaction will also contain a nitrogen atom. Since organic compounds containing a nitrogen atom are polar, they have a high boiling point. As a result, if the organic compound used as a raw material contains a nitrogen atom, the boiling point of the resulting organic compound will be higher, making it particularly prone to adhering to the light-transmitting member 15. However, in this embodiment, since buffer gas BG, rather than process gas PG, is present around the light-transmitting member 15, the adhesion of the organic compound to the light-transmitting member 15 is suppressed. Examples of organic compounds containing a nitrogen atom in addition to carbon and hydrogen atoms include organic compounds containing at least one of an amino group, an imino group, or a cyano group. Examples include methylamine, ethylamine, or acetonitrile. When ultraviolet light L1 is irradiated onto a molecule of an organic compound containing carbon, hydrogen, and nitrogen atoms, it generates a radical consisting of carbon, hydrogen, and nitrogen atoms (sometimes denoted as "{CxHyNz} radical") and a hydrogen radical.

[0068] Furthermore, organic compounds may contain both oxygen and nitrogen atoms in their chemical structure. When such organic compound molecules are irradiated with ultraviolet light L1, they generate radicals consisting of carbon atoms, hydrogen atoms, nitrogen atoms, and oxygen atoms (sometimes denoted as "{CxHyNzOw} radicals") and hydrogen radicals.

[0069] Multiple bonds are a general term for double and triple bonds. Examples of multiple bonds include C=C, C≡C, and C≡N. When an organic compound contains multiple bonds, polymerization reactions that occur when irradiated with ultraviolet light tend to produce organic compounds with larger molecular weights. Organic compounds with larger molecular weights have higher boiling points and tend to adhere to the light-transmitting member 15. Therefore, cleaning the light-transmitting member 15 is particularly important. Examples of organic compounds containing multiple bonds include alkenes such as ethylene and propylene, alkynes such as acetylene and methylacetylene, nitriles such as acetonitrile and propanenitrile, or organic compounds having alkenes, alkynes, or cyano groups as functional groups. When an ethylene molecule is irradiated with ultraviolet light L1, it generates a radical consisting of carbon and hydrogen atoms (sometimes denoted as "{CxHy} radical") and a hydrogen radical. Although ethylene was used as an example here, other organic compounds containing multiple bonds also generate radicals in which hydrogen atoms are removed from the chemical structure of the organic compound.

[0070] Various mechanisms exist for the surface modification process of the workpiece 9 using a substance obtained by radicalizing a gas containing organic compounds. When the workpiece 9 is a fluororesin, the fluorine atoms on the surface are replaced by radicalized organic compounds (e.g., {CxHyOz} radical, {CxHyNz} radical, or {CxHyNzOw} radical), resulting in a change from hydrophobic to hydrophilic. When the workpiece 9 is a metal oxide film formed on the surface of an electronic circuit board such as a printed wiring board, oxygen atoms are removed from the surface of the metal oxide film (i.e., reduced). In this way, substances obtained by radicalizing a gas containing organic compounds can be used for various modifications of workpieces.

[0071] This section describes nitrogen gas used as a buffer gas (BG). Nitrogen gas absorbs ultraviolet light L1 less readily than gases containing organic compounds. More specifically, ultraviolet light L1 has at least one wavelength that exhibits a peak intensity in its emission spectrum. Nitrogen gas has a lower absorption rate than gases containing organic compounds for at least one of the wavelengths that exhibit the peak intensity. Furthermore, the light used may not consist only of wavelengths that are more easily absorbed by gases containing organic compounds than by nitrogen gas, but may also be broad light that includes wavelengths that are more easily absorbed by nitrogen gas than by gases containing organic compounds.

[0072] This section describes combination number C2. Air is used as the process gas (PG), and nitrogen gas is used as the buffer gas (BG). The air used as the process gas (PG) may be atmospheric air or artificially produced CDA (Clean Dry Air). In the case of atmospheric air, oxygen molecules or water vapor (water molecules) contained in the air are the radical sources. Ultraviolet light (L1) is used to radicalize the oxygen molecules, and the radicalized oxygen atoms (oxygen radicals) are brought into contact with the workpiece. Alternatively, ultraviolet light (L1) is used to radicalize the water molecules that make up the water vapor, and the hydroxyl radicals or hydrogen radicals obtained from the decomposition of the water molecules are brought into contact with the workpiece.

[0073] In combination number C2, air is listed as the process gas PG. Air contains radical sources such as oxygen molecules and water molecules, while approximately 80% of the air is nitrogen gas, which is also used as a buffer gas (BG). In this specification, when the gas used as the buffer gas (BG) is supplied to the gas flow space 2 from the process gas supply port 4a in a mixed state with the gas that will become a radical source, the entire mixed gas supplied from the process gas supply port 4a can be treated as the process gas PG.

[0074] This section explains combination number C3. An organic compound-containing gas is used as the process gas (PG), and air is used as the buffer gas (BG). The organic compound-containing gas used as the process gas (PG) can be the same gas as that described in combination number C1. As for the air used as the buffer gas (BG), air was used as the process gas (PG) in combination number C2. Air absorbs ultraviolet light (L1) less readily than organic compound-containing gases, but absorbs ultraviolet light (L1) more readily than nitrogen gas.

[0075] In other words, air is a gas that can be used as both a process gas (PG) and a buffer gas (BG). Whether air is used as a process gas (PG) or a buffer gas (BG) depends on the properties of the other gas it is combined with. Specifically, if air is more easily attenuated by ultraviolet light L1 than the gas it is combined with, air is used as a process gas (PG). If air is less easily attenuated by ultraviolet light L1 than the gas it is combined with, air is used as a buffer gas (BG). Gases that can be used as both a process gas (PG) and a buffer gas (BG) are not limited to air; other gases also exist.

[0076] The above describes three examples of process gas PG and buffer gas BG combinations. In each combination, only one type of process gas PG and one type of buffer gas BG are shown. However, multiple types of process gas PG and multiple types of buffer gas BG may be used, as long as they provide the functions of process gas PG and buffer gas BG described above. Furthermore, the three combinations are merely examples. Other combinations are also possible. The process gas PG may be a gas containing organic compounds or something other than air, and the buffer gas BG may be an inert gas other than nitrogen gas, or a mixed gas other than air (a mixture of an active gas and an inert gas).

[0077] [Other features of the photomodifier] Other features of the photomodifier 100 are described below. A light-transmitting member 15 is positioned at the boundary between the light source unit 7 and the processing chamber 1. The light source 3 is positioned outside the processing chamber 1, and the light-transmitting member 15 guides light from the light source 3 into the processing chamber 1. The light-transmitting member 15 may be made of a material with high transmittance to ultraviolet light L1, such as quartz glass or calcium fluoride. The light source unit 7 may be filled with an inert gas that does not easily attenuate light (such as nitrogen gas). The light source 3 may also be positioned in contact with the light-transmitting member 15.

[0078] The processing chamber 1 may have an opening in its housing that is large enough to allow the material to be processed to be loaded and unloaded. This opening should be configured to be closed with a door or the like.

[0079] The workpiece 9 may be fixed to the mounting section (processing chamber 1) by applying a fixing force such as vacuum suction, electrostatic suction, or mechanical pressure. When loading and transporting the workpiece 9, it is preferable to weaken the fixing force. The workpiece 9 may be automatically loaded into and unloaded from the processing chamber 1 using a robot or the like that for loading and unloading the workpiece 9.

[0080] <Second Embodiment> Referring to Figure 4, a second embodiment of the photomodifying apparatus for modifying the surface of an object to be treated will be described. In the photomodifying apparatus of the second embodiment, matters common to the photomodifying apparatus 100 of the preceding first embodiment will be omitted from the description, and matters characteristic of the photomodifying apparatus of the second embodiment that differ from the preceding first embodiment will be described. Therefore, the characteristics of the photomodifying apparatus not described as the second embodiment are the same as those of the photomodifying apparatus 100 of the preceding first embodiment. The third embodiment and subsequent embodiments will be described in the same manner.

[0081] In the photomodifier 200 of the second embodiment, the gas outlets (5a, 5b) include a process gas outlet 5a that mainly discharges process gas and a buffer gas outlet 5b that mainly discharges buffer gas. In the Z direction extending along the optical axis Lox, the buffer gas outlet 5b is positioned closer to the light source 3 than the process gas outlet 5a. The position height of the process gas supply port 4a and the position height of the process gas outlet 5a may be the same or different. The position height of the buffer gas supply port 4b and the position height of the buffer gas outlet 5b may be the same or different.

[0082] When the two divided gas outlets (5a, 5b) of this embodiment are connected to the negative pressure source (not shown) described above, the process gas flow F PG and buffer gas flow F BG The suction force at the process gas outlet 5a and the buffer gas outlet 5b may be individually adjusted so that each can easily form a laminar flow.

[0083] <Third Embodiment> Referring to Figure 5A, a third embodiment of a photomodifying apparatus for modifying the surface of an object to be processed will be described. In the photomodifying apparatuses of the first and second embodiments (100, 200), the gas flow ports (4a, 4b, 5, 5a, 5b) are openings with a diameter of about the same size as the piping connected to the processing chamber 1. In contrast, in the photomodifying apparatus 300 of the third embodiment, the gas supply ports (4a, 4b) and gas discharge port 5 are composed of planar openings (hereinafter simply referred to as "planar openings") which are two-dimensional openings with a diameter larger than the diameter of the piping connected to the processing chamber 1. By using planar openings, the gas flow (F PG F BG ) can expand the space it occupies.

[0084] A planar opening is an opening in which the shape of the gas flow port extends in two dimensions. The planar opening may be composed of, for example, a nonwoven fabric filter made of nonwoven fabric, a chemical filter in which fibrous material is intertwined three-dimensionally, or perforated metal with a large number of small openings arranged thereon. Furthermore, the planar opening may consist of multiple slit-shaped openings arranged in parallel. Each small opening may have the same opening area or different opening areas.

[0085] In the photomodifier 300 shown in Figure 5A, both the gas supply ports (4a, 4b) and the gas outlet 5 are made of planar openings. However, only the gas supply ports (4a, 4b) may be made of planar openings, or only the gas outlet 5 may be made of planar openings. Alternatively, one of the gas supply ports (4a, 4b) may be made of planar openings.

[0086] Figure 5B illustrates a modified example of the third embodiment. The process gas outlet 5a and the buffer gas outlet 5b are each composed of planar openings.

[0087] <Fourth Embodiment> A fourth embodiment of a photomodifying apparatus for modifying the surface of an object to be treated will be described with reference to Figure 6A. In the photomodifying apparatus 400 of the fourth embodiment, the object to be treated 9 placement section 6 is composed of a table that protrudes toward the center of the gas flow space 2. The object to be treated 9 is placed on the table-shaped placement section 6.

[0088] In this embodiment, a recess into which the object to be processed 9 can be fitted is provided in the mounting section 6, and the process gas flow F PG This makes it less likely for the gas to collide with the side surface of the workpiece 9, and the process gas flow F PG This makes it less likely for turbulence to occur. In addition, by making the sides of the mounting section 6 inclined, the process gas flow F PG Even if it collides with the side surface of the mounting section 6, it may be designed to be less likely to create turbulence.

[0089] The photomodifier 400 controls the process gas flow F PG and buffer gas flow F BGIt has a gas partition plate 23 to prevent mixing. Furthermore, the photomodifier 500 has a backflow prevention plate 25 to prevent backflow of buffer gas BG.

[0090] Figure 6B is a magnified view of the main part of Figure 6A, showing the gas flow space 2 in detail. The gas partition plate 23 extends from the inner wall of the processing chamber 1 between the process gas supply port 4a and the buffer gas supply port 4b toward the central part of the gas flow space 2. The length a2 of the gas partition plate 23 should be long enough not to obstruct the ultraviolet light L1 incident on the workpiece 9. In other words, process gas flow F PG The length a2 of the gas partition plate 23 should be set such that the distance a1 between the upstream (-X side) position of the workpiece 9 and the downstream (+X side) position of the gas partition plate 23 on the X-axis along the direction is 0 mm or more. Preferably, the distance a1 is 5 mm or more, and preferably the length a2 of the gas partition plate 23 is 30 mm or more.

[0091] In the photomodifier 400 having a gas partition plate 23, virtual line Vf (process gas flow F) PG and buffer gas flow F BG The boundary between the two can be considered to coincide with the extension of the gas partition plate 23 in the direction in which it extends. That is, the Z-direction position of the virtual line Vf can be considered to be the same as the Z-direction position of the gas partition plate 23. In this case, the virtual line Vf does not have to include the midpoint CP (see Figure 2B) between the height of the center of the process gas supply port 4a and the height of the center of the buffer gas supply port 4b.

[0092] To allow the process gas PG to flow smoothly, the distance d1 in the Z direction between the gas partition plate 23 and the surface of the mounting section 6 is preferably 2 mm or more and 50 mm or less, and more preferably 5 mm or more and 10 mm or less. When d1 is within this range, the process gas flow F of an appropriate thickness is achieved. PG It is exposed to ultraviolet light L1.

[0093] Furthermore, in this embodiment, the height d2 of the process gas supply port 4a is set higher than the height d3 of the mounting section 6, but the height d2 of the process gas supply port 4a may be set lower than the height d3 of the mounting section 6. Even if the height d2 of the process gas supply port 4a is lower than the height d3 of the mounting section 6, the gas partition plate 23 will function to control the process gas flow F PG A gas can be formed on the workpiece 9. In addition, although the height d3 of the mounting part 6 in this embodiment is fixed, the mounting part 6 may be equipped with a lifting mechanism so that the height d3 can be changed. A mounting part 6 that is configured to be able to move up and down can be said to be configured to be able to protrude toward the gas flow space 2. In addition, the mounting part 6 may be composed of an object with a smaller volume than the workpiece (for example, a pin-shaped object such as a lift pin). In this case, gas also flows on the lower side (-Z side) of the workpiece 9, so the process gas flow F PG It is less likely to obstruct flow and less likely to cause turbulence.

[0094] The backflow prevention plate 25 is located between the optical axis Lox and the gas outlet 5. Buffer gas flow F BG If some of the gas does not go towards the gas outlet 5 but instead hits the inner wall of the processing chamber 1, it may bounce off the inner wall and generate turbulence. Therefore, the buffer gas flow F BG To ensure that the light is directed towards the gas outlet 5, a backflow prevention plate 25 is placed between the optical axis Lox and the gas outlet 5. The backflow prevention plate 25 should be positioned so as not to interfere with the ultraviolet light L1 directed towards the workpiece 9.

[0095] The inclination angle θ1 of the backflow prevention plate 25 is determined by the buffer gas flow F BG It is best to set it so that it is directed towards the gas outlet 5, but if the inclination angle θ1 of the backflow prevention plate 25 is too large, the buffer gas flow F BG Turbulence may occur when the flow collides with the backflow prevention plate 25. The inclination angle θ1 of the backflow prevention plate 25 should be 20 degrees or more, and preferably 45 degrees or less. The length a3 of the backflow prevention plate 25 should be 15 mm or more.

[0096] In this embodiment, the buffer gas flow F BG Although only a backflow prevention plate 25 that prevents backflow is shown, process gas flow FPG A backflow prevention plate may be installed to prevent backflow.

[0097] <Fifth Embodiment> A fifth embodiment of a photomodification apparatus for modifying the surface of an object 9 to be processed will be described with reference to Figure 7. The photomodification apparatus 500 has a light source 3 inside the processing chamber 1. Therefore, the photomodification apparatus 500 does not have a light-transmitting member for guiding light from outside the processing chamber 1 into the processing chamber 1.

[0098] The light source 3 is located in most of the ceiling area (more than 90% of the ceiling area) within the internal space of the processing chamber 1. Therefore, even a small processing chamber 1 can process large objects 9. The processing chamber 1 may have a wide and flat gas flow space 2, for example, a gas flow space 2 whose dimension in the Z direction is smaller than its dimension in the Y direction.

[0099] <Sixth Embodiment> A sixth embodiment of a photomodifying apparatus for modifying the surface of an object to be processed will be described with reference to Figures 8A, 8B, and 8C. Figure 8A is a top view of the photomodifying apparatus 600, showing only the inside of the processing chamber 1. Also, to make Figure 8A easier to view, the light source 3 is not shown in Figure 8A. Figure 8B is a cross-sectional view taken along line A2-A2 in Figure 8A. Figure 8C is a cross-sectional view taken along line A3-A3 in Figure 8A.

[0100] In the photomodifiers of the first to fifth embodiments, the process gas supply port 4a and the buffer gas supply port 4b are positioned opposite each other, with the gas outlets (5, 5a, 5b) and the gas flow space 2 in between, and crossing the optical axis Lox of the emitted ultraviolet light. In contrast, in the photomodifier 600, the process gas supply port 4a is not positioned opposite the gas outlet 5. Therefore, the process gas flow F in the processing chamber 1 PG The flow is not straight, but curves along the way. In contrast, the buffer gas supply port 4b is positioned opposite the gas outlet 5, straddling the gas flow space 2, and crossing the optical axis Lox of the emitted ultraviolet light, and the buffer gas flow F BGThe flow is linear. Furthermore, since the buffer gas supply port 4b is located higher than the process gas supply port 4a (its position in the Z direction is larger), the buffer gas flow F BG is process gas flow F PG This forms layers of different heights. Then, the process gas flow F PG Although it curves, the curve is mainly in the horizontal plane, resulting in a linear buffer gas flow F. BG They hardly ever mix together.

[0101] As a variation of the sixth embodiment, the buffer gas supply port 4b is not positioned opposite the gas outlet 5, forming a curved flow, while the process gas supply port 4a is positioned opposite the gas outlet 5, with the gas flow space 2 in between, and crossing the optical axis Lox of the emitted ultraviolet light, forming a straight flow.

[0102] <Seventh Embodiment> A seventh embodiment of a photomodifying apparatus for modifying the surface of an object to be processed will be described with reference to Figures 9A, 9B, and 9C. Figure 9A is a top view of the photomodifying apparatus 700 of the seventh embodiment. However, only the inside of the processing chamber 1 is shown. Also, in order to make Figure 9A easier to view, the light source 3 is not shown in Figure 9A. Figure 9B is a cross-sectional view taken from A4-A4 in Figure 9A. Figure 9C is a cross-sectional view taken from A5-A5 in Figure 9A. In the photomodifying apparatus 700, two process gas supply ports 4a are arranged opposite each other, with the gas flow space 2 in between. Two buffer gas supply ports 4b are arranged opposite each other, with the gas flow space 2 in between. Two gas outlets 5 are arranged opposite each other on the inner wall between the two process gas supply ports 4a (two buffer gas supply ports 4b). Similar to the sixth embodiment, the buffer gas supply ports 4b are located higher than the process gas supply ports 4a (their position in the Z direction is larger), so the buffer gas flow F BG is process gas flow F PG It forms layers of different heights.

[0103] As shown in Figure 9A, the process gas supply port 4a and buffer gas supply port 4b on the left side (-X side) are close to the gas outlet 5 on the upper side (-Y side), and most of the process gas flow F PG and buffer gas flow F BG However, a small amount of process gas flow F flows towards the upper (-Y side) gas outlet 5. PG and buffer gas flow F BG However, it heads towards the gas outlet 5 on the lower side (+Y side). Conversely, the process gas supply port 4a and buffer gas supply port 4b on the right side (+X side) are close to the gas outlet 5 on the lower side (+Y side), and most of the process gas flow F PG and buffer gas flow F BG However, a small amount of process gas flow F flows towards the gas outlet 5 on the lower side (+Y side). PG and buffer gas flow F BG However, it heads towards the upper (+Y side) gas outlet 5. Furthermore, to form this flow, the process gas supply amount, buffer gas supply amount, and gas discharge amount are adjusted. Process gas flow F PG and buffer gas flow F BG Both curve midway. Two curved gas flows (F PG and F BG ) In all cases, because the curve is mainly in the horizontal plane, the gas flow (F PG and F BG They hardly ever mix together.

[0104] The above describes various embodiments of the photomodification apparatus and photomodification method, and within the description of each embodiment, various modifications have been explained. The present invention is not limited in any way to the embodiments and their modifications described above, and various changes or improvements can be made to the above embodiments without departing from the spirit of the present invention. Furthermore, each embodiment and its modifications can be combined.

[0105] Although the photomodification apparatus in each of the embodiments described above does not include a process gas supply source and a buffer gas supply source, a photomodification system may be configured in which the photomodification apparatus in each of the embodiments described above is equipped with at least one of a process gas supply source and a buffer gas supply source. [Explanation of symbols]

[0106] 1: Processing Chamber 2: Gas flow space 3:Light source 4a: Process gas supply port 4b: Buffer gas supply port 5: Gas outlet 5a: Process gas outlet 5b: Buffer gas outlet 6: Mounting section 7: Light source unit 8: Control Unit 9: Object to be processed 12:Light source room 13a: First flow meter 13b:Second flow meter 14a: First regulating valve 14b: Second regulating valve 15: Light-transmitting member 23: Gas partition plate 25: Backflow prevention plate 100, 200, 300, 350, 400, 500: Photomodifier BG: Buffer gas L1: Ultraviolet light Lox: optical axis PG: Process gas Vf, Vg: virtual lines Vs: virtual plane

Claims

1. A photomodification apparatus for a material to be processed, The aforementioned photomodifier is, A light source that emits ultraviolet light, It comprises a processing chamber, The processing chamber is In the first direction, a mounting section for placing the object to be processed is arranged opposite the light source with a gas flow space in between, Multiple gas supply ports for supplying gas to the aforementioned gas flow space, It has at least one gas outlet for discharging the gas flowing through the gas passage space from the gas passage space, The aforementioned plurality of gas supply ports are A process gas supply port for supplying a process gas capable of modifying the workpiece by irradiation with ultraviolet light into the gas flow space, It has a buffer gas supply port for supplying a buffer gas that absorbs ultraviolet light less than the process gas to the gas flow space, The photomodifier is characterized in that the buffer gas supply port is located closer to the light source than the process gas supply port in the first direction.

2. The photomodifier according to claim 1, characterized in that the process gas supply port and / or the buffer gas supply port are arranged opposite to the at least one gas outlet so as to straddle the gas flow space and so as to cross the optical axis.

3. The light source is located outside the processing chamber. The processing chamber has a light-transmitting section that guides light from the light source into the interior of the processing chamber. The photomodifier according to claim 1, characterized in that

4. The at least one gas outlet is, A process gas outlet that primarily discharges process gas, wherein the process gas outlet is located between the light source and the previously described mounting part in the first direction, A buffer gas outlet primarily for discharging buffer gas, wherein the buffer gas outlet is located between the light source and the process gas outlet in the first direction, comprising: The photomodifier according to claim 1, characterized in that

5. The photomodifier according to any one of claims 1 to 4, characterized in that at least one of the plurality of gas supply ports has a slit-shaped opening or a planar opening.

6. The photomodifier according to any one of claims 1 to 4, characterized in that at least one of the at least one gas outlets has a planar opening.

7. The photomodifier according to any one of claims 1 to 4, characterized in that it comprises a gas partition plate extending from the inner wall of the processing chamber between the process gas supply port and the buffer gas supply port toward the central portion of the gas flow space.

8. The photomodifier according to any one of claims 1 to 4, characterized in that the mounting portion protrudes toward the center of the gas flow space, or is configured to be able to protrude toward the center of the gas flow space.

9. The photomodifier according to any one of claims 1 to 4, characterized in that it is provided with a backflow prevention plate positioned between the optical axis and the at least one gas outlet to prevent backflow of the buffer gas.

10. The photomodifier according to any one of claims 1 to 4, characterized in that it comprises at least one control valve, which is selected from a first control valve capable of adjusting the supply amount of the process gas and a second control valve capable of adjusting the supply amount of the buffer gas.

11. The photomodifier includes a control unit, The control unit controls at least one of the first and second control valves so that the representative flow velocity of the buffer gas is between 0.1 and 10 times the representative flow velocity of the process gas. The photomodifier according to claim 10, characterized in that

12. A method for photomodifying an object to be treated, The aforementioned photomodification method is, By emitting ultraviolet light from the light source, In the first direction, ultraviolet light is incident on the object to be processed, which is positioned opposite the light source with a gas flow space in between. The aforementioned gas flow space is The process gas flow that constitutes the process gas flow used to modify the material to be processed, A buffer gas flow that flows in the first direction closer to the light source than the process gas flow, wherein the buffer gas constituting the buffer gas flow is a gas that absorbs ultraviolet light less readily than the process gas, and the buffer gas flow comprises a buffer gas flow. A method for photomodifying an object to be treated, characterized by the features described above.

13. The photomodification method according to claim 12, characterized in that when the ultraviolet light is incident on the object to be treated, the representative flow velocity of the buffer gas flow is 0.1 times or more and 10 times or less the representative flow velocity of the process gas flow.

14. The process gas is a gas containing at least one of an organic compound, oxygen, and water vapor. The buffer gas is nitrogen gas. A photomodification method according to claim 12 or 13, characterized in that

15. The process gas is air. The buffer gas is nitrogen gas. A photomodification method according to claim 12 or 13, characterized in that

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