Substrate processing apparatus and substrate processing method

Abstract

This enables high-precision substrate processing while suppressing the consumption of fluid resources used in processing the substrate after pattern formation. [Solution] The substrate processing apparatus 1 comprises a nozzle device 100 having a liquid discharge section, a fluid supply system that supplies a processing liquid having a lower surface tension than the residual liquid to the nozzle device 100, a horizontal drive device 151 that moves the nozzle device 100 to multiple different parts of the substrate W in the radial direction while maintaining it in a position above the rotating substrate W, and a control unit 200 that controls the fluid supply system and the horizontal drive device 151 according to the liquid processing conditions. The liquid processing conditions include a liquid flow rate condition that defines the flow rate of the processing liquid to be supplied to the nozzle device 100 at each of the multiple parts of the substrate W, and a liquid movement condition that defines the movement speed of the nozzle device 100 when moving each of the multiple parts of the substrate W in order to supply the processing liquid to each of the multiple parts of the substrate W.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.

Background Art

[0002] A substrate processing apparatus is used to perform various processes on substrates such as semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates.

[0003] In the manufacturing process of semiconductor devices, for example, a pattern of a photosensitive resist is formed on a substrate using photolithography. By supplying a chemical solution (chemical solution treatment) onto the substrate on which the photosensitive resist is formed, various patterns such as wiring circuits are formed on the substrate.

[0004] In order to stop the progress of the chemical solution treatment and remove the chemical solution remaining on the substrate after pattern formation, a rinse treatment is performed. In the rinse treatment, a rinse solution is supplied onto the substrate after the chemical solution treatment. Thereby, the chemical solution on the substrate is replaced with the rinse solution. Thereafter, a drying treatment for removing the rinse solution remaining on the substrate is performed. Patent Document 1 describes a substrate processing system capable of sequentially performing the above chemical solution treatment, rinse treatment, and drying treatment within one processing unit.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] In the processing unit described in Patent Document 1, a substrate is held and rotated by a substrate holding mechanism and subjected to chemical treatment. During the rinsing process after the chemical treatment, a predetermined amount of DIW (De-ionized water) is supplied to the upper surface of the substrate as a rinsing liquid. After rinsing, IPA (Isopropyl Alcohol) is supplied to the substrate as a drying liquid. As a result, the DIW on the substrate is sequentially replaced with IPA. The IPA supplied to the substrate is scattered to the sides of the substrate by centrifugal force. This forms a drying region in the center of the upper surface of the substrate. By supplying N2 gas to the drying region, the drying of the substrate is accelerated.

[0007] In the above series of processes, the IPA and N2 gas fluids are supplied to the substrate from their respective nozzles, and the nozzles are moved relative to the substrate to ensure that the fluids are distributed across the entire surface of the substrate.

[0008] Incidentally, excessive consumption of fluid resources such as IPA and N2 gas, not just chemicals and DIW, increases the cost of substrate processing. Furthermore, from an environmental perspective, an increase in the consumption of organic solvents such as IPA is undesirable. On the other hand, simply reducing the amount of fluids such as IPA and N2 gas used will not improve the manufacturing yield of substrates if the substrate processing cannot be performed with high precision.

[0009] The object of the present invention is to provide a substrate processing apparatus and a substrate processing method that enable high-precision processing of a substrate while suppressing the consumption of fluid resources used in processing the substrate after pattern formation. [Means for solving the problem]

[0010] A substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus for removing residual liquid remaining on a substrate after pattern formation from the substrate, comprising: a rotation drive unit for rotating a substrate holding unit that holds the substrate; a nozzle device having a liquid discharge unit; a fluid supply system for supplying a processing liquid having a lower surface tension than the residual liquid to the nozzle device; a movement drive unit for moving the nozzle device, which is in one position, to a plurality of radially different parts of the substrate while maintaining it in a position above the substrate held by the substrate holding unit; and a control unit for controlling the fluid supply system and the movement drive unit according to liquid processing conditions, wherein the liquid discharge unit is formed to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, and the liquid processing conditions include a liquid flow rate condition that defines the flow rate of the processing liquid to be supplied to the nozzle device in each of the plurality of parts, and a liquid movement condition that defines the movement speed of the nozzle device when moving each of the plurality of parts in order to supply the processing liquid to each of the plurality of parts of the substrate.

[0011] A substrate processing apparatus according to another aspect of the present invention is a substrate processing apparatus for drying a substrate by removing a processing liquid remaining on the substrate after pattern formation, comprising: a rotation drive unit for rotating a substrate holding unit that holds the substrate; a nozzle device having a first gas injection unit; a fluid supply system for supplying a first gas to the nozzle device; a movement drive unit for moving the nozzle device, which is in one position, to a plurality of radially different parts of the substrate while maintaining it above the substrate held by the substrate holding unit; and a control unit for controlling the fluid supply system and the movement drive unit according to gas processing conditions, wherein the first gas injection unit is formed to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, and the gas processing conditions include a gas flow rate condition that defines the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts, and a gas movement condition that defines the movement speed of the nozzle device when moving each of the plurality of parts in order to supply the first gas to each of the plurality of parts of the substrate.

[0012] A substrate processing method according to yet another aspect of the present invention is a substrate processing method for removing residual liquid remaining on a substrate after pattern formation using a nozzle device, wherein the nozzle device has a liquid discharge section, the liquid discharge section is formed to discharge a processing liquid supplied to the nozzle device downward when the nozzle device is in one position, the processing liquid has a lower surface tension than the residual liquid, and the substrate processing method includes the steps of rotating the substrate while holding it with a substrate holder, and moving the nozzle device in one position to a plurality of radially different parts of the substrate while maintaining it in a position above the substrate held by the substrate holder, according to liquid processing conditions, and supplying the processing liquid to the plurality of parts of the substrate, wherein the liquid processing conditions include liquid flow rate conditions that define the flow rate of the processing liquid to be supplied to the nozzle device in each of the plurality of parts, and liquid movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts in order to supply the processing liquid to each of the plurality of parts of the substrate.

[0013] A substrate processing method according to yet another aspect of the present invention is a substrate processing method for drying a substrate by removing a processing liquid remaining on the substrate after pattern formation using a nozzle device, wherein the nozzle device has a gas injection unit, the gas injection unit is formed to inject a first gas supplied to the nozzle device downward when the nozzle device is in one position, and the substrate processing method includes the steps of rotating the substrate while holding it with a substrate holder, and moving the nozzle device in one position to a plurality of radially different parts of the substrate while maintaining it in a position above the substrate held by the substrate holder, according to gas processing conditions, and injecting the first gas into the plurality of parts of the substrate, wherein the gas processing conditions include gas flow rate conditions that define the flow rate of the first gas to be supplied to the nozzle device in each of the plurality of parts, and gas movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts in order to supply the first gas to each of the plurality of parts of the substrate. [Effects of the Invention]

[0014] According to the present invention, it is possible to perform substrate processing with high accuracy while suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

Brief Description of the Drawings

[0015] [Figure 1] It is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a schematic plan view showing the internal configuration of the substrate processing apparatus of FIG. 1. [Figure 3] It is a schematic external perspective view of the nozzle device of FIG. 1. [Figure 4] It is a schematic plan view of the nozzle device of FIG. 1. [Figure 5] It is a longitudinal sectional view taken along the Q-Q line of the nozzle device of FIG. 4. [Figure 6] It is a block diagram showing an outline of the configuration of the control system of the substrate processing apparatus of FIG. 1. [Figure 7] It is a plan view showing an example of a plurality of divided regions defined on the upper surface of a substrate W to be processed. [Figure 8] It is a diagram showing an example of liquid processing conditions. [Figure 9] It is a diagram showing an example of gas processing conditions. [Figure 10] It is a block diagram for explaining a configuration example of a functional unit for performing control based on liquid processing conditions and gas processing conditions. [Figure 11] It is a flowchart showing the flow of processing by a plurality of functional units of FIG. 10. [Figure 12] It is a flowchart showing the flow of processing by a plurality of functional units of FIG. 10. [Figure 13] It is a time chart for explaining an example of the operation of each component when performing a series of processes on a substrate using the substrate processing apparatus of FIG. 1. [Figure 14] It is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 13. [Figure 15]It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 16] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 17] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 18] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 19] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 20] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 21] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 22] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 23] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 24] It is a schematic side view showing the operations of each component of a substrate processing apparatus according to the time chart of FIG. 13. [Figure 25] It is a schematic plan view showing an example of a substrate processing system including the substrate processing apparatus of FIG. 1. [Figure 26] It is a schematic side view of a substrate processing apparatus according to another embodiment. [[ID=3�]] [Figure 27] It is a diagram showing an example of temperature adjustment conditions. [Figure 28] It is a block diagram for explaining a configuration example of a functional unit for performing control based on liquid processing conditions, gas processing conditions, and temperature adjustment conditions. [Figure 29] It is a flowchart showing the flow of processing by a plurality of functional units in FIG. 28. [Figure 30]This is a schematic side view of a substrate processing apparatus according to another embodiment. [Figure 31] This figure shows an example of gaseous radiation conditions. [Figure 32] This is a block diagram illustrating an example configuration of a functional unit for controlling based on liquid treatment conditions, gas treatment conditions, and gas discharge conditions. [Figure 33] Figure 32 is a flowchart showing the processing flow by multiple functional units. [Modes for carrying out the invention]

[0016] The following describes a substrate processing apparatus and a substrate processing method according to one embodiment of the present invention with reference to the drawings. In the following description, "substrate" refers to a substrate used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, such as a flat panel display (FPD) substrate, semiconductor substrate, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate, ceramic substrate, or solar cell substrate. The upper surface of the substrate refers to the surface of the substrate facing upward, and the lower surface of the substrate refers to the surface of the substrate facing downward. The upper surface of the substrate may be the circuit formation surface (front surface) or the surface opposite to the circuit formation surface (back surface). The substrate has a circular shape in plan view, excluding notches.

[0017] Furthermore, the substrate processing apparatus described below performs chemical treatment, rinsing, and drying treatments on the substrate to be processed. In this embodiment, chemical treatment is a process in which a predetermined pattern structure is formed on the upper surface of the substrate by supplying a chemical solution to the upper surface of the substrate. Rinsing treatment is a process in which the chemical solution is washed away from the upper surface of the substrate by supplying a rinsing solution to the upper surface of the substrate after chemical treatment. Furthermore, drying treatment is a process in which the rinse solution remaining on the substrate is replaced with a treatment solution by supplying a treatment solution having a lower surface tension than the rinsing solution to the upper surface of the substrate after rinsing, and then the substrate is dried. In the following description, the treatment solution used in the drying treatment, i.e., the treatment solution having a lower surface tension than the rinsing solution, will be referred to as the replacement solution.

[0018] 1. Outline of the configuration of the substrate processing apparatus Figure 1 is a schematic side view of a substrate processing apparatus according to one embodiment of the present invention. Figure 2 is a schematic plan view showing the internal configuration of the substrate processing apparatus 1 of Figure 1. In Figure 2, only some of the multiple components of the substrate processing apparatus 1 of Figure 1 are shown. As shown in Figure 1, the substrate processing apparatus 1 includes a substrate holding device 20, a cup device 30, a drainage device 39, a chemical supply device 40, a rinse liquid supply system 50, and a replacement liquid supply system 60. The substrate processing apparatus 1 also includes a first gas supply system 70, a second gas supply system 80, a third gas supply system 90, a nozzle device 100, a nozzle moving device 150, and a control unit 200.

[0019] Furthermore, the substrate processing apparatus 1 includes a chamber CH that houses each of the above-mentioned components. The chamber CH has four side sections, a top section, and a bottom section. A transport opening (not shown) for transporting substrates between the inside and outside of the chamber CH is formed in one of the side sections of the chamber CH. In addition, an FFU (filter fan unit) 10 is provided in the top section of the chamber CH. The FFU 10 generates a downward airflow of clean air inside the chamber CH.

[0020] A substrate holding device 20 is provided approximately in the center of the bottom of the chamber CH. The substrate holding device 20 includes a substrate holding section 21 and a rotary drive section 22. The rotary drive section 22 is, for example, a motor and is fixed to the bottom of the chamber CH. The rotary drive section 22 has a rotating shaft that extends upward. The substrate holding section 21 is connected to the upper end of the rotating shaft.

[0021] The substrate holding unit 21 is a so-called mechanical chuck type spin chuck that holds the outer peripheral edge of the substrate W. Specifically, the substrate holding unit 21 includes a disc-shaped spin base 21a and a plurality of rotatable holding pins 21b provided on the upper peripheral edge of the spin base 21a. In the substrate holding unit 21, the lower peripheral edge and outer peripheral edge of the substrate W, which is placed on the spin base 21a, are held by the plurality of holding pins 21b. In this state, the rotation drive unit 22 operates, causing the substrate W to rotate in a horizontal position. In Figures 1 and 2, the substrate W held by the substrate holding device 20 is shown by a dashed line.

[0022] Various treatment liquids are supplied to the upper surface of the substrate W, which is held and rotated by the substrate holding device 20, thereby performing the above-mentioned chemical treatment, rinsing treatment, and drying treatment. A cup device 30 and a drainage device 39 are used to dispose of the various liquids that are scattered from the rotating substrate W during each treatment.

[0023] The cup device 30 includes an outer cup 30A, an inner cup 30B, and a cup drive unit 31. Each of the outer cup 30A and the inner cup 30B has a substantially cylindrical shape and is provided to surround the substrate holding unit 21 in a plan view (Figure 2) and to extend in the vertical direction. The inner diameter of the outer cup 30A is larger than the outer diameter of the inner cup 30B. As a result, the inner cup 30B is positioned inside the outer cup 30A. Furthermore, each of the outer cup 30A and the inner cup 30B is provided to be movable in the vertical direction.

[0024] The cup drive unit 31 includes an actuator such as a motor or an air cylinder. The cup drive unit 31 moves the outer cup 30A and the inner cup 30B, respectively, between predetermined upper and lower cup positions in accordance with the processing performed on the substrate W.

[0025] The upper position of each cup 30A and 30B is such that the upper end of the cup is above the height (vertical position) of the substrate W held by the substrate holding part 21. This allows each cup to receive the processing liquid splashing from the substrate W while in the upper position. On the other hand, the lower position of each cup 30A and 30B is such that the upper end of the cup is below the height of the substrate W held by the substrate holding part 21. In this embodiment, the upper position of the outer cup 30A and the upper position of the inner cup 30B are the same. Also, the lower position of the outer cup 30A and the lower position of the inner cup 30B are the same.

[0026] The drainage device 39 includes an outer container 39A and an inner container 39B, which correspond to the outer cup 30A and inner cup 30B, respectively. Each of the outer container 39A and the inner container 39B has an annular groove that opens upward, which guides the liquid received by the corresponding cup to the waste disposal facility within the factory.

[0027] A chemical solution nozzle 41 is provided inside the chamber CH. The chemical solution supply device 40 includes a chemical solution supply system and a chemical solution nozzle moving device (not shown). The chemical solution nozzle 41 is supported by the chemical solution nozzle moving device. When the substrate W is treated with a chemical solution, the chemical solution nozzle moving device moves the chemical solution nozzle 41 between a processing position above the center WC (Figure 2) of the substrate W, which is held by the substrate holding part 21, and a standby position on the side of the substrate W. The chemical solution supply system of the chemical solution supply device 40 supplies chemical solution to the chemical solution nozzle 41 at the processing position when the substrate W is treated with a chemical solution. As a result, the chemical solution is supplied to the upper surface of the substrate W, which is held and rotated by the substrate holding part 21.

[0028] The chemicals used include hydrofluoric acid (HF), a mixture of sulfuric acid and hydrogen peroxide (SPM), a mixture of ammonia water and hydrogen peroxide (SC1), a mixture of hydrochloric acid and hydrogen peroxide (SC2), dilute hydrofluoric acid (DHF), organic alkalis (e.g., tetramethylammonium hydroxide (TMAH)), or buffered hydrofluoric acid (BHF).

[0029] Within the chamber CH, a rinse liquid nozzle 51 is provided at a predetermined position above the substrate holding device 20 and the cup device 30. The rinse liquid nozzle 51 is fixed so that its discharge port faces the center WC of the substrate W held by the substrate holding unit 21. The rinse liquid supply system 50 supplies rinse liquid to the rinse liquid nozzle 51 when rinsing the substrate W. As a result, the rinse liquid is supplied to the upper surface of the substrate W, which is held and rotated by the substrate holding unit 21.

[0030] As rinsing solutions, pure water (deionized water), carbonated water, ozonated water, magnetic water, ultra-diluted ammonia water (1 ppm to 100 ppm), ultra-diluted hydrochloric acid water (1 ppm to 100 ppm), reduced water (hydrogen water), or ionized water can be used.

[0031] The nozzle device 100 is supported within the chamber CH by a nozzle moving device 150. As shown in Figure 2, the nozzle moving device 150 includes a base 153, a support shaft 154, and an arm 155. The base 153 is fixed to the bottom of the chamber CH so as to be located outside the outer cup 30A in a plan view. The support shaft 154 is provided so as to extend upward for a certain distance from the base 153. An arm 155 extending horizontally is attached to the upper end of the support shaft 154. The nozzle device 100 is attached to the tip of the arm 155.

[0032] As shown in Figure 1, the nozzle moving device 150 further includes a horizontal drive device 151 and a vertical drive device 152. Each of the horizontal drive device 151 and the vertical drive device 152 is built into, for example, the base portion 153 in Figure 2 and includes an actuator such as a motor or an air cylinder.

[0033] The horizontal drive device 151 rotates the support shaft 154 around its axis during the drying process of the substrate W. As a result, the nozzle device 100 moves in an arc in plan view between the space above the substrate W held by the substrate holding section 21 and the standby position to the side of the substrate W (see the thick solid arrow in Figure 2).

[0034] Furthermore, the vertical drive device 152 moves the support shaft 154 in the vertical direction. As a result, the horizontal drive device 151 moves the nozzle device 100 between the nozzle upper position and the nozzle lower position in the space above the substrate W held by the substrate holding part 21 during the drying process of the substrate W.

[0035] In the following description, the height position of the nozzle device 100 refers to the height position of the lower end of the nozzle device 100. The nozzle upper position is a height position above the cup upper positions of the outer cup 30A and the inner cup 30B, and a predetermined distance (for example, about 30 mm) above the substrate W held by the substrate holding part 21. The nozzle lower position is a height position below the nozzle upper position, and above the substrate W held by the substrate holding part 21.

[0036] The displacement liquid supply system 60, the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90 supply the displacement liquid, the first gas, the second gas, and the third gas, respectively, to the nozzle device 100 during the drying process of the substrate W.

[0037] As described above, the displacement solution is a treatment solution having a lower surface tension than the rinsing solution used in the rinsing treatment immediately preceding the drying treatment. Organic solvents are used as such treatment solutions. In this embodiment, IPA (isopropyl alcohol) is used as the displacement solution. In addition to IPA, other organic solvents such as HFE (hydrofluoroether), methanol, ethanol, or acetone can be used as the displacement solution. Furthermore, the displacement solution may be a mixture of an organic solvent and pure water.

[0038] In this embodiment, the first gas, the second gas, and the third gas are nitrogen gas. Note that the first gas, the second gas, and the third gas may be any inert gas; argon gas or helium gas, for example, can be used instead of nitrogen gas. Furthermore, the first gas, the second gas, and the third gas may be the same type of inert gas, or at least one of them may be a different type of inert gas from the others.

[0039] The control unit 200 controls each part of the substrate processing apparatus 1 so that chemical treatment, rinsing, and drying treatments are performed on the substrate W. Details of the control unit 200 will be described later.

[0040] 2. Configuration of nozzle device 100 The configuration of the nozzle device 100 will now be described. Figure 3 is a schematic external perspective view of the nozzle device 100 in Figure 1, Figure 4 is a schematic plan view of the nozzle device 100 in Figure 1, and Figure 5 is a longitudinal cross-sectional view of the nozzle device 100 in Figure 4 along the QQ line.

[0041] As shown in Figure 3, the nozzle device 100 includes a nozzle body portion 101 having a substantially cylindrical shape. In the substrate processing apparatus 1, the nozzle device 100 is supported by a nozzle moving device 150 in a position in which the axis (central axis) of the nozzle body portion 101 extends in the vertical direction.

[0042] The nozzle body portion 101 has an upper surface 110, a lower surface 120, and an outer peripheral surface 130. The upper surface 110 is circular in shape and faces upward when the nozzle device 100 is in one position. The lower surface 120 is circular in shape and faces downward when the nozzle device 100 is in one position. The central part of the lower surface 120 is concave in a mortar shape. The outer peripheral surface 130 is a cylindrical surface that connects the outer edge of the upper surface 110 and the outer edge of the lower surface 120.

[0043] The nozzle body 101 has two through holes 102 and 103 formed therein, extending vertically along the axis of the nozzle body 101 and positioned close to each other. One of the through holes 102 is into which a replacement fluid pipe 61, which constitutes part of the replacement fluid supply system 60 in Figure 1, is inserted. The other through hole 103 is into which a first gas pipe 71, which constitutes part of the first gas supply system 70 in Figure 1, is inserted.

[0044] As shown in Figure 5, with the displacement fluid pipe 61 inserted into the through hole 102, the tip of the displacement fluid pipe 61 is located at the lower end of the nozzle device 100 and functions as a displacement fluid outlet 62 that discharges the displacement fluid downward. On the other hand, with the first gas pipe 71 inserted into the through hole 103, the tip of the first gas pipe 71 is located at the lower end of the nozzle device 100 and functions as a first gas injection port 72 that injects the first gas downward. In Figures 3 and 5, the flow of displacement fluid discharged from the nozzle device 100 through the displacement fluid pipe 61 is indicated by a thick solid arrow. Also, the flow of the first gas injected from the nozzle device 100 through the first gas pipe 71 is indicated by a thick dotted arrow.

[0045] As shown in Figure 3, near the lower end of the outer circumferential surface 130 of the nozzle body 101, a second gas injection port 131 and a third gas injection port 132 are formed in an annular shape extending circumferentially around the entire circumference of the outer circumferential surface 130. The third gas injection port 132 is located above the second gas injection port 131 and is close to it. In Figure 3, a dot pattern is added to the second gas injection port 131 and the third gas injection port 132 to facilitate understanding of their shapes.

[0046] A second gas pipe 81, which constitutes part of the second gas supply system 80 in Figure 1, is connected to the outer circumferential surface of the nozzle body 101, as is a third gas pipe 91, which constitutes part of the third gas supply system 90 in Figure 1.

[0047] As shown in Figure 5, a gas flow path 141 is formed inside the nozzle body 101 to guide the second gas supplied from the second gas pipe 81 to the second gas injection port 131. In addition, a gas flow path 142 is formed inside the nozzle body 101 to guide the third gas supplied from the third gas pipe 91 to the third gas injection port 132.

[0048] As a result, when the second gas is supplied to the nozzle device 100, the second gas is injected from the second gas nozzle 131 through the second gas pipe 81 and gas flow path 141, as shown by the thick dashed arrows in Figures 3 to 5. The flow of the second gas injected from the second gas nozzle 131 spreads radially in a direction perpendicular to the axis of the nozzle body 101.

[0049] Furthermore, when the third gas is supplied to the nozzle device 100, the third gas is injected from the third gas nozzle 132 through the third gas piping 91 and gas flow path 142, as shown by the thick dashed arrows in Figures 3 to 5. The flow of the third gas injected from the third gas nozzle 132 spreads radially in a direction perpendicular to the axis of the nozzle body 101, similar to the flow of the second gas.

[0050] 3. Control system of substrate processing device 1 The control system of the substrate processing apparatus 1 will be described along with the configuration of the control unit 200 shown in Figure 1. Figure 6 is a block diagram illustrating the schematic configuration of the control system of the substrate processing apparatus 1 shown in Figure 1. As shown in Figure 6, the control unit 200 includes a CPU (Central Processing Unit) 201, RAM (Random Access Memory) 202, ROM (Read-Only Memory) 203, and a storage device 204. The RAM 202 is used as the working area for the CPU 201. The ROM 203 stores the system program. The storage device 204 includes a storage medium such as a hard disk or semiconductor memory and stores the substrate cleaning program, liquid treatment conditions, and gas treatment conditions for performing the above-mentioned series of processes (chemical treatment, rinsing treatment, and drying treatment) on the substrate W.

[0051] The circuit board cleaning program may be provided on a recording medium such as a CD-ROM 209 and installed in ROM 203 or storage device 204. Alternatively, the circuit board cleaning program may be distributed from an external server to the circuit board processing device 1 via a communication network and installed in ROM 203 or storage device 204.

[0052] The CPU 201 executes a circuit board cleaning program, which controls the operation of each part of the circuit board processing apparatus 1. Specifically, the control unit 200 controls the circuit board holding device 20. As a result, the control unit 200 causes the circuit board W being brought into the circuit board processing apparatus 1 to be held by the circuit board holding device 20. The control unit 200 also releases the circuit board W from the holding device 20 in order to remove the circuit board W from the circuit board processing apparatus 1. Furthermore, the control unit 200 rotates the circuit board W held by the circuit board holding device 20 at a preset speed.

[0053] Furthermore, the control unit 200 controls the cup device 30. As a result, the control unit 200 moves the outer cup 30A and the inner cup 30B, respectively, between the upper cup position and the lower cup position.

[0054] Furthermore, the control unit 200 controls the chemical solution supply device 40. As a result, the control unit 200 moves the chemical solution nozzle 41 within the chamber CH and supplies the chemical solution to the chemical solution nozzle 41 during chemical solution processing. The control unit 200 also controls the rinse solution supply system 50. As a result, the control unit 200 supplies rinse solution to the rinse solution nozzle 51 during the rinsing process.

[0055] Furthermore, the control unit 200 controls the replacement liquid supply system 60. As a result, when the rinse liquid on the substrate W is replaced with the replacement liquid during the drying process, the control unit 200 supplies the replacement liquid to the nozzle device 100.

[0056] Furthermore, the control unit 200 controls the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90. As a result, the control unit 200 supplies the first gas to the nozzle device 100 when removing the displacement liquid from the substrate W during the drying process. The control unit 200 also supplies the second gas and the third gas to the nozzle device 100 during the drying process.

[0057] Furthermore, the control unit 200 controls the horizontal drive unit 151 and the vertical drive unit 152 of the nozzle moving device 150. As a result, the control unit 200 moves the nozzle device 100 within the chamber CH during the drying process.

[0058] The liquid processing conditions stored in the storage device 204 include liquid flow rate conditions and liquid transfer conditions. These will be described later. The gas processing conditions stored in the storage device 204 also include gas flow rate conditions and gas transfer conditions. These will be described later.

[0059] The substrate processing apparatus 1 further comprises an operation unit 190. The operation unit 190 includes, for example, a keyboard and a pointing device, and is configured to be operable by a user. The user can input the above-mentioned liquid processing conditions and gas processing conditions by operating the operation unit 190. The input liquid processing conditions and gas processing conditions are stored in the storage device 204 of the control unit 200.

[0060] 4. Details and specific examples of liquid treatment conditions In the substrate processing apparatus 1 according to this embodiment, multiple divided regions are defined on multiple parts of the upper surface of the substrate W held by the substrate holding device 20, for the purpose of identifying each of the multiple parts.

[0061] Figure 7 is a plan view showing an example of multiple divided regions defined on the upper surface of the substrate W to be processed. In Figure 7, the substrate W is shown along with the substrate holding device 20 and nozzle moving device 150 shown in Figure 1.

[0062] In the example shown in Figure 7, a divided region R1 is defined in the central part of the upper surface of the substrate W, and a divided region R2 is defined outside the central part of the upper surface of the substrate W. Divided region R1 has a circular shape with respect to the center WC of the substrate W. The length La of the radius of divided region R1 is half the radius of the substrate W. Divided region R2 has an annular shape that includes the outer edge of the substrate W and surrounds divided region R1. Divided region R2 is also adjacent to divided region R1. The length Lb between the inner and outer circles of divided region R2, i.e., the width of divided region R2 in the radial direction of the substrate W, is the same as the length La of divided region R1.

[0063] In Figure 7, a dot pattern is applied to divided region R1 and hatching is applied to divided region R2 so that the shapes of the divided regions R1 and R2 defined on the substrate W can be easily understood.

[0064] During the drying process, as described above, the nozzle moving device 150 moves the nozzle device 100 from the standby position WP on the side of the substrate W to the space above the substrate W. The nozzle moving device 150 also moves the nozzle device 100 from the space above the substrate W to the standby position WP.

[0065] In Figure 7, the movement path MP of the nozzle device 100 during the drying process in the horizontal direction is shown by a thick dashed line. The movement path MP extends in an arc shape. One end of the movement path MP coincides with the center WC of the substrate W in a plan view, and the other end of the movement path MP coincides with the standby position WP in a plan view.

[0066] In the following explanation, the three positions on the movement path MP, as shown by the three black dots in Figure 7, will be referred to as the first position p1, the second position p2, and the third position p3. The first position p1 coincides with the center WC of the substrate W and is located at one end of the movement path MP in a plan view. The second position p2 is a position on the movement path MP that coincides with the boundary between the divided regions R1 and R2 in a plan view. The third position p3 is a position on the movement path MP that coincides with the outer edge of the substrate W in a plan view.

[0067] During the drying process, when replacing the rinse liquid on the substrate W with a replacement liquid, the nozzle device 100 moves along a movement path MP from a first position p1 to a third position p3 in a plan view, while discharging the replacement liquid downwards. In this case, while the nozzle device 100 moves from the first position p1 to the second position p2 along the movement path MP, it faces the divided region R1 of the substrate W at a position above the substrate W. Also, while the nozzle device 100 moves from the second position p2 to the third position p3 along the movement path MP, it faces the divided region R2 of the substrate W at a position above the substrate W.

[0068] Here, the liquid flow rate condition is a condition that defines the flow rate of the replacement liquid (the amount of replacement liquid to be supplied per unit time) to each of the multiple parts (divided regions R1, R2) of the substrate W. More specifically, the liquid flow rate condition in this example defines the flow rate of the replacement liquid to be supplied to the nozzle device 100 when the nozzle device 100 is facing each part of the substrate W as it moves along the movement path MP.

[0069] Furthermore, the liquid movement conditions define the movement speed of the nozzle device 100 when it moves through the space above each part of the substrate W in order to supply replacement liquid to each of the multiple parts of the substrate W (divided regions R1, R2). More specifically, the liquid movement conditions in this example define the horizontal movement speed of the nozzle device 100 when the nozzle device 100 is facing each part of the substrate W during the supply of replacement liquid to the substrate W.

[0070] Figure 8 shows an example of liquid treatment conditions. The upper part of Figure 8 shows the liquid flow rate conditions among the liquid treatment conditions in a graph. In the upper part of the graph in Figure 8, the vertical axis represents the discharge flow rate of the replacement liquid discharged from the nozzle device 100, and the horizontal axis represents the position on the movement path MP in Figure 7.

[0071] According to the liquid flow rate conditions in Figure 8, the discharge flow rate of the replacement liquid when the nozzle device 100 is positioned opposite the divided region R1 of the substrate W is set to be constant at flow rate f01. On the other hand, when the nozzle device 100 is positioned opposite the divided region R2 of the substrate W, the discharge flow rate of the replacement liquid is set to increase at a constant rate as the nozzle device 100 approaches the third position p3 from the second position p2. As a result, the discharge flow rate of the replacement liquid when the nozzle device 100 is at the third position p3 is a flow rate f02 which is greater than the discharge flow rate of the replacement liquid (flow rate f01) when the nozzle device 100 is at the second position p2. In the liquid flow rate conditions of this example, the flow rate f01 is, for example, 200 (ml / min), and the flow rate f02 is, for example, 500 (ml / min).

[0072] The lower part of Figure 8 shows the liquid movement conditions among the liquid processing conditions in a graph. In the upper part of the graph in Figure 8, the vertical axis represents the movement speed of the nozzle device 100, and the horizontal axis represents the position on the movement path MP in Figure 7.

[0073] According to the liquid movement conditions in Figure 8, the movement speed of the nozzle device 100 when it is in a position opposite the divided region R1 is set to decrease as the nozzle device 100 approaches the second position p2 from the first position p1. More specifically, the movement speed of the nozzle device 100 is set to the highest speed v01 at the first position p1 and to a lower speed v02 at the second position p2. Furthermore, the movement speed of the nozzle device 100 changes gradually within a certain range from the first position p1 and within a certain range from the second position p2, and changes relatively sharply in the rest of the range.

[0074] Furthermore, the moving speed of the nozzle device 100 when it is in a position opposite the divided region R2 is set to decrease as the nozzle device 100 approaches the third position p3 from the second position p2. More specifically, the moving speed of the nozzle device 100 is set to speed v02 at the second position p2 and to speed 0 at the third position p3. In addition, the moving speed of the nozzle device 100 is set to change gradually from the second position p2 to an approximately midpoint between the second position p2 and the third position p3, and then change sharply near the third position p3.

[0075] Here, we assume that the nozzle device 100 moves at a constant speed along the movement path MP from a first position p1 to a third position p3 in the space above the rotating substrate W. In this case, the area on the substrate W facing the nozzle device 100 per unit time is smaller the closer the nozzle device 100 is to the first position p1, i.e., the center WC of the substrate W. Also, the area on the substrate W facing the nozzle device 100 per unit time is larger the closer the nozzle device 100 is to the third position p3, i.e., the outer edge of the substrate W. Therefore, when the nozzle device 100 moves as described above, if fluid is also supplied to the substrate W from the nozzle device 100 at a constant flow rate, the amount of fluid supplied per unit time will be greater in the area closer to the center WC of the substrate W. Also, the amount of fluid supplied per unit time will be less in the area closer to the outer edge of the substrate W. Therefore, the processing efficiency of the substrate W by the fluid decreases in the vicinity of the outer edge of the substrate W compared to the area near the center WC and its vicinity.

[0076] To address these challenges, the liquid treatment conditions shown in Figure 8 allow for adjustment of the discharge volume of the replacement liquid from the nozzle device 100 and the movement speed of the nozzle device 100 during the drying process when the rinse liquid on the substrate W is replaced with the replacement liquid. This prevents an excessive amount of replacement liquid from being supplied to the center WC and surrounding areas of the substrate W per unit time. Furthermore, the amount of replacement liquid supplied to the outer edges and nearby areas of the substrate W per unit time increases, improving the efficiency of replacing the rinse liquid with the replacement liquid at the outer edges and nearby areas of the substrate W.

[0077] 5. Details and specific examples of gas treatment conditions During the drying process to remove the displacement liquid from the substrate W, the nozzle device 100 moves along a movement path MP from a first position p1 to a third position p3 in a plan view, while spraying a first gas downwards. In this case, the nozzle device 100 sequentially faces the divided regions R1 and R2 of the substrate W.

[0078] Here, the gas flow rate condition is a condition that defines the flow rate of the first gas to be supplied (injected) to each of the multiple parts (divided regions R1, R2) of the substrate W (the amount of the first gas to be supplied per unit time). More specifically, the gas flow rate condition in this example is a condition that defines the flow rate of the first gas to be supplied to the nozzle device 100 when the nozzle device 100 is facing each part of the substrate W as it moves along the movement path MP.

[0079] Furthermore, the gas movement conditions define the movement speed of the nozzle device 100 when it moves through the space above each part of the substrate W in order to supply the first gas to each of the multiple parts of the substrate W (divided regions R1, R2). More specifically, the gas movement conditions in this example define the horizontal movement speed of the nozzle device 100 when it is facing each part of the substrate W during the supply of the first gas to the substrate W.

[0080] Figure 9 shows an example of gas treatment conditions. The upper part of Figure 9 shows the gas flow rate conditions among the gas treatment conditions in a graph. In the graph in the upper part of Figure 9, the vertical axis represents the injection flow rate of the first gas injected from the nozzle device 100, and the horizontal axis represents the position on the movement path MP in Figure 7.

[0081] According to the gas flow rate conditions in Figure 9, the first gas injection flow rate is set to be constant at flow rate f11 when the nozzle device 100 is positioned opposite the divided region R1 of the substrate W. On the other hand, the first gas injection flow rate when the nozzle device 100 is positioned opposite the divided region R2 of the substrate W is set to increase at a constant rate as the nozzle device 100 approaches the third position p3 from the second position p2. As a result, the first gas injection flow rate when the nozzle device 100 is at the third position p3 is a flow rate f12 that is greater than the first gas injection flow rate (flow rate f11) when the nozzle device 100 is at the second position p2. In the gas flow rate conditions of this example, the flow rate f11 is, for example, 50 (l / min), and the flow rate f12 is, for example, 100 (l / min).

[0082] The lower part of Figure 9 shows the gas movement conditions among the gas processing conditions in a graph. In the upper part of the graph in Figure 9, the vertical axis represents the movement speed of the nozzle device 100, and the horizontal axis represents the position on the movement path MP in Figure 7.

[0083] According to the gas movement conditions in Figure 9, the movement speed of the nozzle device 100 when it is in a position opposite the divided region R1 is set to decrease as the nozzle device 100 approaches the second position p2 from the first position p1, similar to the example of liquid movement conditions in Figure 8. More specifically, the movement speed of the nozzle device 100 is set to the highest speed v11 at the first position p1 and to a lower speed v12 at the second position p2. Furthermore, the movement speed of the nozzle device 100 changes gradually within a certain range from the first position p1 and within a certain range from the second position p2, and changes relatively sharply in the rest of the range.

[0084] Furthermore, the moving speed of the nozzle device 100 when it is in a position opposite the divided region R2 is set to decrease as the nozzle device 100 approaches the third position p3 from the second position p2, similar to the example of liquid movement conditions in Figure 8. More specifically, the moving speed of the nozzle device 100 is set to a speed v12 at the second position p2 and to a speed of 0 at the third position p3. In addition, the moving speed of the nozzle device 100 is set to change gradually from the second position p2 to approximately an intermediate position between the second position p2 and the third position p3, and then change sharply near the third position p3.

[0085] As described above, under the liquid treatment conditions shown in Figure 9, when removing the displacement liquid from the substrate W during the drying process, the amount of first gas injected from the nozzle device 100 and the movement speed of the nozzle device 100 are adjusted. This prevents an excessive amount of first gas from being supplied to the center WC and surrounding area of ​​the substrate W per unit time. In addition, the amount of first gas supplied to the outer edge and its vicinity of the substrate W per unit time increases, improving the efficiency of removing the displacement liquid by the first gas at the outer edge and its vicinity of the substrate W.

[0086] 6. Functional unit for control based on liquid treatment conditions and gas treatment conditions Figure 10 is a block diagram illustrating an example configuration of a functional unit for performing control based on liquid treatment conditions and gas treatment conditions. As shown in Figure 10, the CPU 201 of the control unit 200 includes an operation reception unit 211, a movement condition acquisition unit 212, a flow rate condition acquisition unit 213, a horizontal movement control unit 214, a displacement liquid flow rate control unit 215, and a first gas flow rate control unit 216 as functional units for performing control based on liquid treatment conditions and gas treatment conditions. These functional units are realized when the CPU 201 of the control unit 200 executes a substrate cleaning program stored in the storage device 204. Note that some or all of the above functional units may be realized by hardware such as electronic circuits.

[0087] The operation reception unit 211 receives liquid treatment conditions and gas treatment conditions input from the operation unit 190 in Figure 6. The operation reception unit 211 also stores the received liquid treatment conditions and gas treatment conditions in the storage device 204.

[0088] The movement condition acquisition unit 212 acquires liquid movement conditions from the liquid treatment conditions stored in the storage device 204 when the substrate W is being dried. The movement condition acquisition unit 212 also acquires gas movement conditions from the gas treatment conditions stored in the storage device 204. Furthermore, the movement condition acquisition unit 212 provides the acquired liquid movement conditions and gas movement conditions to the horizontal movement control unit 214.

[0089] The flow rate condition acquisition unit 213 acquires the liquid flow rate condition from the liquid treatment conditions stored in the storage device 204 when the substrate W is being dried. The flow rate condition acquisition unit 213 also acquires the gas flow rate condition from the gas treatment conditions stored in the storage device 204. Furthermore, the flow rate condition acquisition unit 213 provides the acquired liquid flow rate condition and gas flow rate condition to the displacement liquid flow rate control unit 215 and the first gas flow rate control unit 216, respectively.

[0090] When the drying process of the substrate W begins, the horizontal movement control unit 214 controls the horizontal drive device 151 shown in Figure 6 based on the liquid movement conditions provided by the movement condition acquisition unit 212. The horizontal drive device 151 in this embodiment includes a pulse motor as a drive source. In this case, the horizontal movement control unit 214 controls the rotation angle of the pulse motor by providing one or more drive pulses to the horizontal drive device 151. At this time, the horizontal movement control unit 214 detects the rotation angle of the pulse motor by counting the number of drive pulses provided to the horizontal drive device 151.

[0091] Furthermore, the horizontal movement control unit 214 detects the position of the nozzle device 100 on the movement path MP based on the detected rotation angle of the pulse motor. That is, the horizontal movement control unit 214 detects the relative position of the nozzle device 100 with respect to the substrate W in the horizontal plane.

[0092] The horizontal drive unit 151 may have a motor with a built-in encoder. In this case, the horizontal movement control unit 214 may detect the rotation angle of the motor based on the output signal of the encoder of the horizontal drive unit 151 and detect the position of the nozzle device 100 on the movement path MP.

[0093] Furthermore, the horizontal movement control unit 214 provides the displacement liquid flow rate control unit 215 and the first gas flow rate control unit 216 with information indicating the position of the nozzle device 100 on the detected movement path MP.

[0094] The replacement liquid flow rate control unit 215 controls the replacement liquid supply system 60 shown in Figure 6 based on the liquid flow rate conditions and information provided by the horizontal movement control unit 214 when replacing the rinse liquid on the substrate W with the replacement liquid during the substrate W drying process. As a result, the replacement liquid is supplied to the nozzle device 100 at a flow rate according to the liquid flow rate conditions, depending on the position of the nozzle device 100 relative to the substrate W.

[0095] The first gas flow control unit 216 controls the first gas supply system 70 in Figure 6 based on the gas flow conditions and information provided by the horizontal movement control unit 214 when removing the displacement liquid from the substrate W during the substrate W drying process. As a result, the first gas is supplied to the nozzle device 100 at a flow rate according to the gas flow conditions, depending on the position of the nozzle device 100 relative to the substrate W.

[0096] Figures 11 and 12 are flowcharts showing the processing flow by the multiple functional units of Figure 10. Note that in Figures 11 and 12, in order to show the processing by the multiple functional units of Figure 10, the processing related to the vertical movement of the nozzle device 100 and the processing of supplying the second and third gases to the nozzle device 100 are omitted.

[0097] The CPU 201 in Figure 6 executes the substrate cleaning program, which initiates the drying process of the substrate W at a predetermined timing. In the initial state, the storage device 204 is assumed to have pre-stored liquid treatment conditions and gas treatment conditions based on the user's operation of the control unit 190.

[0098] When the drying process of the substrate W begins, the movement condition acquisition unit 212 and the flow rate condition acquisition unit 213 acquire the liquid movement conditions and liquid flow rate conditions, respectively (step S10). Next, the control unit 200 rotates the substrate W at a predetermined speed by controlling the rotation drive unit 22 of the substrate holding device 20 (step S11).

[0099] Next, the horizontal movement control unit 214 moves the nozzle device 100 to a first position p1 by controlling the horizontal drive unit 151 (step S12). When the nozzle device 100 reaches the first position p1, the horizontal movement control unit 214 starts moving the nozzle device 100 according to the acquired liquid movement conditions (step S13).

[0100] Next, the horizontal movement control unit 214 detects the position of the nozzle device 100 in the movement path MP based on the count by counting the drive pulses supplied to the horizontal drive device 151 (step S14).

[0101] Next, the displacement fluid flow rate control unit 215 determines the flow rate of the displacement fluid to be supplied to the nozzle device 100 at that moment, based on the fluid flow rate conditions and the detected position of the nozzle device 100 (step S15).

[0102] Next, the displacement fluid flow rate control unit 215 controls the displacement fluid supply system 60 to supply displacement fluid to the nozzle device 100 at the determined flow rate (step S16). Subsequently, the horizontal movement control unit 214 determines whether or not the nozzle device 100 is in the third position p3 (step S17).

[0103] If the nozzle device 100 is not in the third position p3, the process returns to step S14. On the other hand, if the nozzle device 100 is in the third position p3, the displacement fluid flow control unit 215 stops supplying displacement fluid to the nozzle device 100 (step S18).

[0104] Next, the movement condition acquisition unit 212 and the flow rate condition acquisition unit 213 acquire the gas movement conditions and gas flow rate conditions, respectively (step S19). The horizontal movement control unit 214 also controls the horizontal drive device 151 to move the nozzle device 100 back to the first position p1 (step S20). When the nozzle device 100 reaches the first position p1, the horizontal movement control unit 214 starts moving the nozzle device 100 according to the acquired gas movement conditions (step S21).

[0105] Next, the horizontal movement control unit 214 detects the position of the nozzle device 100 in the movement path MP in the same manner as in step S14 (step S22).

[0106] Next, the first gas flow control unit 216 determines the flow rate of the first gas to be supplied to the nozzle device 100 at that moment, based on the gas flow rate conditions and the detected position of the nozzle device 100 (step S23).

[0107] Next, the first gas flow rate control unit 216 supplies the first gas to the nozzle device 100 at a determined flow rate by controlling the first gas supply system 70 (step S24). Subsequently, the horizontal movement control unit 214 determines whether or not the nozzle device 100 is in the third position p3 (step S25).

[0108] If the nozzle device 100 is not in the third position p3, the process returns to step S22. On the other hand, if the nozzle device 100 is in the third position p3, the first gas flow control unit 216 stops supplying the first gas to the nozzle device 100 (step S26).

[0109] Finally, the control unit 200 controls the rotation drive unit 22 of the substrate holding device 20 to stop the rotation of the substrate W (step S27), and moves the nozzle device 100 to the standby position WP (step S28). This completes the drying process of the substrate W.

[0110] 7. Operation of the substrate processing device 1 Figure 6 describes a specific example of the operation of the substrate processing apparatus 1 when a series of processes are performed on the substrate W by the execution of a substrate cleaning program by the CPU 201 shown in Figure 6. Figure 13 is a time chart illustrating an example of the operation of each component when a series of processes are performed on a substrate using the substrate processing apparatus 1 shown in Figure 1. Figures 14 to 24 are schematic side views showing the operation of each component of the substrate processing apparatus 1 according to the time chart in Figure 13. The diameter of the substrate W to be processed in this example is assumed to be 300 mm.

[0111] The leftmost part of Figure 13 shows the 10 items that control the operation of the substrate processing apparatus 1. The 10 items are "chemical solution," "rinse solution," "nozzle height position," "nozzle horizontal position," "displacement solution," "first gas," "second and third gases," "outer cup height position," "inner cup height position," and "substrate rotation speed," and are arranged vertically in this order from the top row (1st row) to the bottom row (10th row).

[0112] To the right of the above 10 items, the control content corresponding to those items is shown chronologically using a common time axis. To the right of the first item, "Chemical Solution," it is indicated whether or not chemical solution is supplied from the chemical solution supply device 40 to the chemical solution nozzle 41 (supply or stop). To the right of the second item, "Rinse Solution," it is indicated whether or not rinse solution is supplied from the rinse solution supply system 50 to the rinse solution nozzle 51 (supply or stop).

[0113] To the right of the third item, "Height position of the nozzle device," the vertical position of the nozzle device 100 in the substrate processing apparatus 1 (upper nozzle position and lower nozzle position) is shown. To the right of the fourth item, "Horizontal position of the nozzle device," the horizontal position of the nozzle device 100 in the substrate processing apparatus 1 is shown. The "standby position" shown as the horizontal position is the standby position WP in Figure 7. Furthermore, "Outer edge of the substrate" is the position of the nozzle device 100 when, in a plan view, the nozzle device 100 overlaps with the outer edge of the substrate W, that is, when the nozzle device 100 is above the outer edge of the substrate W (third position p3 in Figure 7). Furthermore, "Center of the substrate" is the position of the nozzle device 100 when, in a plan view, the nozzle device 100 overlaps with the center WC of the substrate W, that is, when the nozzle device 100 is above the center WC of the substrate W (first position p1 in Figure 7).

[0114] To the right of the fifth item, "Replacement Fluid," it is indicated whether or not replacement fluid is supplied from the replacement fluid supply system 60 to the nozzle device 100 (supply or stop). To the right of the sixth item, "First Gas," it is indicated whether or not the first gas is supplied from the first gas supply system 70 to the nozzle device 100 (supply or stop). To the right of the seventh item, "Second and Third Gases," it is indicated whether or not the second and third gases are supplied from the second gas supply system 80 and the third gas supply system 90 to the nozzle device 100 (supply or stop).

[0115] To the right of the 8th item, "Height position of the outer cup," the vertical position of the outer cup 30A in the substrate processing apparatus 1 is shown. To the right of the 9th item, "Height position of the inner cup," the vertical position of the inner cup 30B in the substrate processing apparatus 1 is shown. To the right of the 10th item, "Rotation speed of the substrate," the change in the rotation speed of the substrate W, which is held and rotated by the substrate holding device 20, is shown.

[0116] In the schematic side views of Figures 14 to 24, the first position p1, the second position p2, and the third position p3 on the movement path MP in Figure 7 are each indicated by thick dashed arrows.

[0117] First, in the initial state (time t0), the supply of the "chemical solution" to the chemical solution nozzle 41 is stopped. Also, the supply of the "rinse solution" to the rinse solution nozzle 51 is stopped. Furthermore, the supply of the "displacement liquid," "first gas," and "second and third gases" to the nozzle device 100 is stopped. In addition, the "nozzle height position" is maintained at the nozzle upper position, the "nozzle horizontal position" is maintained at the standby position, and the "outer cup height position" and "inner cup height position" are maintained at the cup lower position. Furthermore, in the initial state, since the substrate W is not held in the substrate holding device 20, the "substrate rotation speed" is 0 rpm.

[0118] At time t1, the substrate W is loaded into the chamber CH of the substrate processing apparatus 1 and placed on the substrate holding section 21. The substrate W is then held by the substrate holding section 21. Next, from time t2 to time t3, the substrate W is treated with a chemical solution. Specifically, from time t2, the rotation of the substrate W held by the substrate holding section 21 begins. The rotation speed is increased from 0 rpm to a relatively high first speed and maintained at the first speed. In this embodiment, the first speed is 1500 rpm.

[0119] With the rotation speed of the substrate W maintained at a first speed, the chemical nozzle 41 is positioned at a processing position above the substrate W (in this example, the first position p1), as shown in Figure 14. The chemical solution L1 is then discharged from the chemical nozzle 41 toward the center WC of the substrate W for a predetermined period of time. This causes a liquid film of the chemical solution L1 to spread across the entire upper surface of the substrate W.

[0120] As described above, the chemical treatment proceeds. During the chemical treatment, the chemical solution L1 is scattered from the rotating substrate W. To catch the scattered chemical solution L1, an outer cup 30A is set in the cup-up position just before time t2. As a result, the chemical solution L1 caught by the outer cup 30A is discarded through the outer container 39A. In Figure 14, the height position of the upper end of the outer cup 30A in the cup-up position is indicated by the symbol RP.

[0121] Next, after the discharge of the chemical solution L1 from the chemical nozzle 41 to the substrate W is stopped, the substrate W is rinsed from time t3 to time t4. During the rinsing process, the rotation speed of the substrate W is maintained at the first speed. Also, as shown in Figure 15, the rinse liquid L2 is discharged from the rinse liquid nozzle 51 toward the center WC of the substrate W. As a result, a liquid film of the rinse liquid L2 spreads across the entire upper surface of the substrate W, and the chemical solution L1 remaining on the substrate W is replaced by the rinse liquid L2.

[0122] Figure 15 shows a magnified cross-sectional view of a portion of the substrate W during the rinsing process, within the dashed-dotted nozzle. According to this cross-sectional view, numerous grooves with depths perpendicular to the substrate W (in this example, vertically) are formed on the upper surface of the substrate W in a predetermined pattern. The rinsing liquid L2 fills the entire interior of each groove.

[0123] As described above, the rinsing process proceeds. During the rinsing process, the rinsing liquid L2 is mainly splashed from the rotating substrate W. To catch the splashed rinsing liquid L2, an inner cup 30B is set in the cup-up position just before time t3. As a result, the rinsing liquid L2 caught by the inner cup 30B is discarded through the inner container 39B. In the predetermined figures from Figure 15 onward, the height position of the upper end of the inner cup 30B in the cup-up position is indicated by the symbol RP.

[0124] Next, after the rinsing process is completed, the substrate is dried from time t4 to time t6. In the drying process, as a preliminary step, the rinse liquid L2 remaining on the substrate W is replaced with replacement liquid L3 from time t4 to time t5. Time points t41 and t42, described below, represent specific time points between time t4 and time t5.

[0125] Specifically, as time t4 progresses, the nozzle device 100 is moved horizontally along the movement path MP in Figure 7 from the standby position WP to the first position p1, while maintaining the height position of the nozzle device 100 at the nozzle upper position HP. This movement corresponds to the movement of the nozzle device 100 in step S12 of Figure 11. The nozzle upper position HP is a height position above the cup upper positions of the outer cup 30A and the inner cup 30B. As a result, as shown in Figure 16, the lower end of the nozzle device 100 (the displacement liquid discharge port 62 and the first gas injection port 72 in Figure 5) faces the center WC of the substrate W.

[0126] At time t4, the second gas and the third gas are further supplied to the nozzle device 100 from the second gas supply system 80 and the third gas supply system 90. As a result, a flow F23 of the second and third gases is formed horizontally from near the lower end of the nozzle device 100 (specifically, from the second gas injection port 131 and the third gas injection port 132 in Figure 5), as shown by the thick solid arrows in Figure 16. In this embodiment, the flow rate of the second gas supplied to the nozzle device 100 is 72.5 L / min, and the flow rate of the third gas supplied to the nozzle device 100 is also 72.5 L / min.

[0127] Furthermore, at the time t4, the substrate holding device 20 is controlled to reduce the rotation speed of the substrate W from the first speed to a second speed lower than the first speed, and maintain it at the second speed. In this embodiment, the second speed is 100 rpm.

[0128] At time t41, a short period of time after time t4, the supply of replacement liquid L3 from the replacement liquid supply system 60 to the nozzle device 100 begins. In this case, as shown in Figure 17, the replacement liquid L3 is discharged from the lower end of the nozzle device 100 (replacement liquid discharge port 62 in Figure 5) toward the center WC of the substrate W. As a result, a liquid film of replacement liquid L3 spreads across the entire upper surface of the substrate W. At this time, as shown in the upper part of the dashed-dotted discharge in Figure 17, the replacement liquid L3 discharged in a direction perpendicular to the substrate W is smoothly guided into the interior of the multiple grooves formed on the substrate W. Furthermore, since the replacement liquid L3 is discharged from the nozzle device 100 located at the upper position HP of the nozzle, it collides with the surface of the substrate W with higher energy compared to when it is discharged from the nozzle device 100 located at the lower position of the nozzle. As a result, the rinse liquid L2 remaining inside the groove located at the center WC of the substrate W is efficiently replaced by the replacement liquid L3.

[0129] However, in areas of the substrate W excluding the central WC, the replacement liquid L3 flows horizontally toward the periphery of the substrate W, making it difficult for it to enter the interior of each groove. Therefore, as shown in the lower section of the dashed-dotted outlet in Figure 17, it is highly likely that the interior of most of the grooves will remain with residual rinse liquid L2. In this example, from time t42 to time t5, after a further small period has elapsed from time t41, the nozzle device 100 is moved horizontally from the first position p1 to the third position p3 while its height is maintained at the nozzle upper position HP. This movement corresponds to the operation of the nozzle device 100 that is started in step S13 of Figure 11. As a result, the movement speed of the nozzle device 100 is adjusted according to its position on the movement path MP.

[0130] As the nozzle device 100 moves along the movement path MP, as shown in Figure 18, the rinse liquid L2 in the groove located directly beneath the nozzle device 100 is forcibly replaced by the replacement liquid L3 as the nozzle device 100 moves. Subsequently, as shown in Figure 19, at time t5, the nozzle device 100 reaches the outer edge of the substrate, filling all grooves on the substrate W with the replacement liquid L3 and removing the rinse liquid L2. The time from time t42 to time t5 is, for example, 5 seconds.

[0131] As described above, in the step of replacing the rinse liquid L2 on the substrate W with the replacement liquid L3, the nozzle device 100 is maintained at the nozzle upper position HP. Also, as described above, the nozzle upper position HP is above the cup upper positions of the outer cup 30A and the inner cup 30B. As a result, when discharging the replacement liquid L3 to the outer edge of the substrate W and the surrounding area, the nozzle device 100 does not interfere with the outer cup 30A and the inner cup 30B.

[0132] The operation of supplying the replacement liquid L3 to the nozzle device 100 from time t42 to time t5 corresponds to the processes in steps S14 to S17 of Figure 11. As a result, the amount of replacement liquid L3 supplied to the nozzle device 100, i.e., the flow rate of the replacement liquid L3 discharged from the nozzle device 100 onto the substrate W, is adjusted according to the position on the movement path MP.

[0133] For example, the flow rate of the replacement fluid L3 discharged from the nozzle device 100 is maintained at 200 ml / min while the nozzle device 100 moves from the first position p1 to the second position p2. Furthermore, the flow rate of the replacement fluid L3 discharged from the nozzle device 100 is increased at a constant rate from 200 ml / min to 500 ml / min while the nozzle device 100 moves from the second position p2 to the third position p3.

[0134] Next, as a post-processing step after the drying process, a procedure is performed to remove the replacement liquid L3 remaining on the substrate W from time t5 to time t6. Time points t51, t52, t53, and t54, described below, represent specific time points between time t5 and time t6.

[0135] Specifically, as time t5 progresses, the supply of replacement fluid L3 from the replacement fluid supply system 60 to the nozzle device 100 is stopped. Subsequently, as shown in Figure 20, with the height position of the nozzle device 100 maintained at the nozzle upper position HP, the nozzle device 100 is moved horizontally along the movement path MP in Figure 7 from the third position p3 to the first position p1. This movement corresponds to the movement of the nozzle device 100 in step S20 of Figure 12.

[0136] Next, at time t51, a small period of time after time t5, with the nozzle device 100 positioned above the center WC of the substrate W, the first gas is supplied to the nozzle device 100 from the first gas supply system 70. This supply operation takes place between the processes of step S20 and step S21 in Figure 12. Here, the flow rate of the first gas supplied to the nozzle device 100 is 5 L / min, 25 L / min, or 50 L / min. In this case, as shown in Figure 21, the first gas is injected from the lower end of the nozzle device 100 (the first gas injection port 72 in Figure 5) toward the center WC of the substrate W.

[0137] At the start of the first gas injection, the nozzle device 100 is in the nozzle-up position HP. Therefore, a relatively large distance is maintained between the nozzle device 100 and the substrate W. Consequently, the degree of impact generated when the first gas injected from the nozzle device 100 collides with the substrate W is significantly lower than when the first gas is injected with the nozzle device 100 in the nozzle-down position. Therefore, as shown within the dashed-dotted line in Figure 21, at time t51, the displacement liquid L3 on the substrate W is hardly affected by the first gas.

[0138] Next, at time t52, the rotation speed of the substrate W is increased from the second speed to a third speed that is higher than the second speed and lower than the first speed, and is maintained at the third speed. In this embodiment, the third speed is 300 rpm.

[0139] Furthermore, from time t52 to time t53, as shown in Figure 22, the height of the nozzle device 100 is lowered from the nozzle upper position HP to the nozzle lower position LP. The nozzle lower position LP is lower than the nozzle upper position HP and higher than the substrate W. As a result, the degree of impact when the first gas ejected from the nozzle device 100 collides with the substrate W gradually increases.

[0140] At this time, as shown within the dashed-dotted outlet in Figure 22, the first gas, which is injected in a direction perpendicular to the substrate W, is smoothly guided into the interior of the multiple grooves of the pattern formed on the substrate W. As a result, the rinse liquid L2 remaining inside the groove located at the center WC of the substrate W is completely removed by the replacement liquid L3 at time t53.

[0141] However, in areas other than the center WC of the substrate W, the first gas is not blown onto the bottom of each groove, making it difficult to completely remove the displacement liquid L3 remaining inside the grooves. Therefore, in this example, from time t53 to time t6, the nozzle device 100 is moved horizontally from the center of the substrate to the outer edge of the substrate while its height is maintained at the nozzle-down position LP. This movement corresponds to the operation of the nozzle device 100 that is started in step S21 of Figure 12. As a result, the movement speed of the nozzle device 100 is adjusted according to its position on the movement path MP.

[0142] As the nozzle device 100 moves along the movement path MP, as shown in Figure 23, the displacement liquid L3 in the grooves directly beneath the nozzle device 100 is forcibly blown away and removed by the first gas as the nozzle device 100 moves. Then, as shown in Figure 24, at time t6, the nozzle device 100 reaches the outer edge of the substrate, completely removing the displacement liquid L3 from all grooves on the substrate W, and the substrate W dries. The time from time t53 to time t6 is, for example, 10 seconds.

[0143] Incidentally, when the nozzle device 100, which is in the nozzle-lower position LP, moves toward the outer edge of the substrate W while the outer cup 30A and inner cup 30B are in the cup-up position, there is a high possibility that the nozzle device 100 and the outer cup 30A and inner cup 30B will interfere with each other. Therefore, in this example, at time t54, just before time t6 when the nozzle device 100 reaches the outer edge of the substrate, the height positions of the outer cup 30A and inner cup 30B are changed from the cup-up position to the cup-lower position.

[0144] The operation of supplying the first gas to the nozzle device 100 from time t53 to time t6 corresponds to the processing in steps S22 to S25 in Figure 12. As a result, the amount of the first gas supplied to the nozzle device 100, i.e., the flow rate of the first gas injected from the nozzle device 100 onto the substrate W, is adjusted according to the position on the travel path MP.

[0145] For example, the flow rate of the first gas injected from the nozzle device 100 is maintained at 50 (l / min) while the nozzle device 100 moves from the first position p1 to the second position p2. Furthermore, the flow rate of the first gas injected from the nozzle device 100 is increased at a constant rate from 50 (l / min) to 100 (l / min) while the nozzle device 100 moves from the second position p2 to the third position p3.

[0146] As described above, the drying process is completed at time t6. After the drying process is completed, the supply of the first gas, second gas, and third gas to the nozzle device 100 is stopped. The height position of the nozzle device 100 is adjusted to the nozzle upper position HP, and the nozzle device 100 is returned to the standby position. Furthermore, the rotation of the substrate W is stopped. In this state, the substrate W is discharged from the chamber CH of the substrate processing apparatus 1.

[0147] 8. Effects of the Embodiment (a) According to the substrate processing apparatus 1 described above, in the pre-processing step for drying the substrate W, the rinse liquid L2 remaining on the substrate W is replaced with replacement liquid L3. At this time, the amount of replacement liquid L3 supplied to each of the multiple parts (divided regions R1, R2) of the substrate W is adjusted. In addition, the movement speed of the nozzle device 100 when moving over each of the multiple parts (divided regions R1, R2) of the substrate W is adjusted. As a result, the rinse liquid L2 remaining on the substrate W can be appropriately replaced with replacement liquid L3 according to the part of the substrate W. Therefore, it becomes possible to properly remove the rinse liquid L2 from the substrate W. In addition, it becomes possible to reduce the consumption of replacement liquid L3. As a result, it becomes possible to process the substrate W with high precision while suppressing the consumption of replacement liquid L3 used for processing the substrate W after pattern formation.

[0148] Specifically, as shown in the example in Figure 8, we assume a case where, under liquid flow conditions, the flow rate of the replacement liquid L3 corresponding to the center WC of the substrate W and its surrounding area is set low, and the flow rate of the replacement liquid L3 corresponding to the outer edge of the substrate W and its surrounding area is set high. When such liquid flow conditions are used, it is possible to suppress the supply of an excessive amount of replacement liquid L3 to the center WC of the substrate W in the pre-processing step before the drying of the substrate W. In addition, a sufficient amount of replacement liquid L3 can be supplied to the outer edge of the substrate W to remove the rinse liquid L2, thereby improving the replacement efficiency of the rinse liquid L2.

[0149] Furthermore, as shown in the example in Figure 8, we can assume a case where, under liquid transfer conditions, the transfer speed corresponding to the center WC of the substrate W and its surrounding area is set high, and the transfer speed corresponding to the outer edge of the substrate W and its surrounding area is set low. When such liquid transfer conditions are used, it is possible to suppress the supply of an excessive amount of replacement liquid L3 to the center WC of the substrate W in the pre-process before the drying of the substrate W. In addition, a sufficient amount of replacement liquid L3 can be supplied to the outer edge of the substrate W to remove the rinse liquid L2, thereby improving the replacement efficiency of the rinse liquid L2.

[0150] (b) According to the substrate processing apparatus 1 described above, in the post-processing step of drying the substrate W, the displacement liquid L3 remaining on the substrate W is removed by the first gas. At this time, the amount of the first gas supplied to each of the multiple parts (divided regions R1, R2) of the substrate W is adjusted. In addition, the movement speed of the nozzle device 100 when moving over each of the multiple parts (divided regions R1, R2) of the substrate W is adjusted. As a result, the displacement liquid L3 remaining on the substrate W can be appropriately blown away with the first gas according to the part of the substrate W. Therefore, it becomes possible to appropriately remove the displacement liquid L3 from the substrate W. In addition, it becomes possible to reduce the consumption of the first gas. As a result, it becomes possible to process the substrate W with high precision while suppressing the consumption of the first gas used for processing the substrate W after pattern formation.

[0151] Specifically, as shown in the example in Figure 9, we assume a case where, under gas flow conditions, the flow rate of the first gas corresponding to the center WC of the substrate W and its surrounding area is set low, and the flow rate of the first gas corresponding to the outer edge of the substrate W and its surrounding area is set high. When such gas flow conditions are used, it is possible to suppress the supply of an excessive amount of the first gas to the center WC of the substrate W in the post-processing steps of the substrate W drying treatment. In addition, a sufficient amount of the first gas can be supplied to the outer edge of the substrate W to remove the displacement liquid L3, thereby improving the removal efficiency of the displacement liquid L3.

[0152] Furthermore, as shown in the example in Figure 9, we can assume a case where, under gas transfer conditions, the transfer speed corresponding to the center WC of the substrate W and its surrounding area is set high, and the transfer speed corresponding to the outer edge of the substrate W and its surrounding area is set low. When such gas transfer conditions are used, it is possible to suppress the supply of an excessive amount of the first gas to the center WC of the substrate W in the post-processing step of the substrate W drying treatment. In addition, a sufficient amount of the first gas can be supplied to the outer edge of the substrate W to remove the displacement liquid L3, thereby improving the removal efficiency of the displacement liquid L3.

[0153] (c) In the substrate processing apparatus 1 described above, in the step prior to the drying process, the nozzle device 100 is positioned at the nozzle upper position HP, and the replacement liquid discharge port 62 faces the center WC of the substrate W. In this state, the replacement liquid L3 is discharged downward from the replacement liquid discharge port 62 of the nozzle device 100. The nozzle device 100 is also moved horizontally from the center of the substrate to the outer edge of the substrate. In this case, the nozzle device 100 is held at a height position that is further away from the substrate W compared to when the nozzle device 100 is at the nozzle lower position LP. In particular, the nozzle upper position HP is above the upper edges of the outer cup 30A and inner cup 30B which are at the cup upper position. Therefore, when the nozzle device 100 moves toward the outer edge of the substrate, the nozzle device 100 and the outer cup 30A and inner cup 30B do not interfere with each other.

[0154] Furthermore, as the nozzle device 100 moves horizontally from the center of the substrate to the outer edge of the substrate, the replacement liquid L3 is discharged over a wide area of ​​the upper surface of the substrate W in a direction perpendicular to the substrate W. At this time, because the replacement liquid L3 is discharged from the upper nozzle position HP, it collides with the surface of the substrate W with higher energy compared to when it is discharged from the lower nozzle position LP. As a result, the rinse liquid L2 remaining inside the grooves on the substrate W is efficiently replaced by the replacement liquid L3, and the rinse liquid L2 remaining inside the grooves is smoothly removed.

[0155] Next, in the post-processing stage of the drying treatment, the nozzle device 100 is positioned at the nozzle upper position HP, and the first gas injection port 72 faces the center WC of the substrate W. In this state, the first gas is injected downward from the first gas injection port 72 of the nozzle device 100. While the state of injection of the first gas is maintained, the nozzle device 100 descends from the nozzle upper position HP to the nozzle lower position LP. At this time, the degree of impact generated when the first gas injected from the first gas injection port 72 collides with the substrate W gradually increases as the nozzle device 100 moves from the nozzle upper position HP to the nozzle lower position LP. Therefore, the change in impact applied to the displacement liquid L3 on the substrate W is mitigated compared to when the injection of the first gas is started when the nozzle device 100 is at the nozzle lower position LP. Consequently, the scattering of the displacement liquid L3 caused by the collision of the first gas with the substrate W is reduced. This suppresses the decrease in the cleanliness of the substrate W caused by the displacement liquid L3 scattered from the substrate W re-adhering to the substrate W.

[0156] Subsequently, with the nozzle device 100 in the lower nozzle position LP and the injection of the first gas continuing, the nozzle device 100 is moved horizontally from the center of the substrate to the outer edge of the substrate. In this case, the first gas is sprayed over a wide area of ​​the upper surface of the substrate W in a direction perpendicular to the substrate W. As a result, the replacement liquid L3 remaining inside the numerous grooves on the substrate W is efficiently replaced by the first gas. Therefore, the replacement liquid L3 remaining inside each groove is smoothly removed, and the substrate W dries. During this drying process, since the replacement liquid L3 has a lower surface tension than the rinsing liquid L2, the pattern formed on the substrate W is less susceptible to damage (such as pattern collapse) caused by the surface tension of the replacement liquid L3. As a result, it becomes possible to appropriately remove the rinsing liquid L2 remaining on the substrate W after pattern formation.

[0157] (d) When the nozzle device 100 is positioned in the space above the substrate W, the second gas is ejected from the second gas nozzle 131. In this case, a flow of the second gas is formed above the substrate W, spreading in a planar manner parallel to the upper surface of the substrate W. This suppresses particles scattered above the second gas nozzle 131 from falling onto the substrate W. Therefore, the decrease in the cleanliness of the substrate W after drying is suppressed.

[0158] (e) When the nozzle device 100 is positioned in the space above the substrate W, the second gas is injected from the second gas nozzle 131 while the third gas is injected from the third gas nozzle 132. The flow of the third gas injected from the third gas nozzle 132 blocks the flow of gas between the space above the third gas nozzle 132 and the space below the third gas nozzle 132. This further prevents contaminants such as particles from falling onto the substrate W from the space above the third gas nozzle 132.

[0159] Furthermore, with the nozzle device 100 in one position, the third gas injection port 132 is located above the second gas injection port 131. This makes it possible to fill the space below the third gas injection port 132 and above the substrate W with the second gas when the second and third gases are injected simultaneously from the nozzle device 100. Therefore, the space surrounding the substrate W can be maintained in a clean and unreactive environment, that is, a chemically stable environment.

[0160] 9. Substrate processing system comprising substrate processing apparatus 1 Figure 25 is a schematic plan view showing an example of a substrate processing system comprising the substrate processing apparatus 1 shown in Figure 1. As shown in Figure 25, the substrate processing system 800 in this example includes a substrate loading / unloading section 801 and a substrate processing section 802.

[0161] The substrate loading / unloading section 801 is equipped with multiple (three in this example) carrier platforms 810, a transport robot 821, and a control device 830. Each carrier platform 810 has a platform C on which multiple substrates W are stored. The transport robot 821 includes multiple (e.g., four) hands and is configured to hold and transport the substrates W. The control device 830 includes a CPU and memory or a microcomputer and controls each component within the substrate processing system 800.

[0162] The substrate processing unit 802 is equipped with a transport robot 822 and multiple (four in this example) substrate processing units 1. In a plan view, the four substrate processing units 1 are arranged to surround the transport robot 822. These substrate processing units 1 are the substrate processing units 1 shown in Figure 1. That is, in the substrate processing system 800 of Figure 25, the substrate processing unit 1 of Figure 1 is provided as one processing unit constituting the substrate processing system 800. The transport robot 822 includes multiple (e.g., four) hands and is configured to hold and transport substrates W.

[0163] In the substrate processing system 800, a transport robot 821 takes an unprocessed substrate W from one of the multiple carriers C placed on a multiple carrier platform 810 and passes it to a transport robot 822. The transport robot 822 passes the received substrate W to one of the multiple substrate processing devices 1. Thereafter, the above-mentioned series of processes (chemical treatment, rinsing, and drying) are performed in the substrate processing device 1.

[0164] Furthermore, the transport robot 822 takes a processed substrate W from one of the multiple substrate processing devices 1 and passes it to the transport robot 821. The transport robot 821 receives the processed substrate W and places it in an empty carrier C.

[0165] Each substrate processing apparatus 1 makes it possible to process the substrate W with high precision while suppressing the consumption of fluid resources (displacement liquid L3 and first gas) used for processing the substrate W after pattern formation. Therefore, the substrate processing system 800 reduces the cost required for processing the substrate W and enables highly efficient substrate processing with a high yield.

[0166] 10. Other Embodiments (a) In the substrate processing apparatus 1 according to the above embodiment, two divided regions R1 and R2 are defined on the upper surface of the substrate W to distinguish each of the multiple parts, but the present invention is not limited thereto. Three or more divided regions arranged in the radial direction of the substrate W may be defined on the upper surface of the substrate W. In this case, the lengths of the multiple divided regions in the radial direction of the substrate W may be the same or different from each other.

[0167] Furthermore, as described above, if three or more divided regions are defined on the substrate W, the liquid flow rate condition specifies the flow rate of the replacement liquid L3 to be supplied to each of the three or more divided regions. In addition, the liquid movement condition specifies the movement speed of the nozzle device 100 when it moves through the space above each of the divided regions of the substrate W in order to supply the replacement liquid L3 to each of the three or more divided regions.

[0168] Furthermore, if three or more divided regions are defined on the substrate W, the gas flow rate condition specifies the flow rate of the first gas to be supplied to each of the three or more divided regions. In addition, the gas movement condition specifies the movement speed of the nozzle device 100 when it moves through the space above each of the three or more divided regions of the substrate W in order to supply the first gas to each of the three or more divided regions.

[0169] Note that multiple divided regions do not necessarily have to be defined on the upper surface of the substrate W. In this case, the liquid flow rate conditions may be set so that the flow rates of multiple displacement liquids L3 correspond to multiple parts of the movement path MP in Figure 7. Similarly, the gas flow rate conditions may be set so that the flow rates of multiple first gases correspond to multiple parts of the movement path MP in Figure 7. Furthermore, the liquid movement conditions and gas movement conditions may each be set so that the movement speeds of the nozzle device 100 correspond to multiple parts of the movement path MP in Figure 7.

[0170] (b) In the substrate processing apparatus 1 according to the above embodiment, the control unit 200 may adjust the rotational speed of the substrate W when the replacement liquid L3 or the first gas is supplied to each of the multiple parts of the substrate W (divided regions R1, R2) by controlling the rotational drive unit 22. For example, the control unit 200 may rotate the substrate W at a first rotational speed when the replacement liquid L3 or the first gas is supplied to the divided region R1 by controlling the rotational drive unit 22. Alternatively, the substrate W may be rotated at a second rotational speed different from the first rotational speed when the replacement liquid L3 or the first gas is supplied to the divided region R2. In these cases, each of the liquid processing conditions and gas processing conditions stored in the storage device 204 may include conditions indicating the relationship between the multiple parts of the substrate W and the rotational speed of the substrate W.

[0171] (c) In the above embodiment, the flow rates of the fluids corresponding to the center WC of the substrate W and its surrounding area were set low under the liquid flow rate conditions and gas flow rate conditions, and the flow rates of the fluids corresponding to the outer edges of the substrate W and its surrounding area were set high. However, the present invention is not limited thereto. Depending on the pattern formed on the substrate W, the flow rates of the fluids corresponding to the center WC of the substrate W and its surrounding area may be set high under the liquid flow rate conditions and gas flow rate conditions, and the flow rates of the fluids corresponding to the outer edges of the substrate W and its surrounding area may be set low.

[0172] (d) In the above embodiments, the case in which the moving speed corresponding to the center WC of the substrate W and its periphery is set high and the moving speed corresponding to the outer edge of the substrate W and its periphery is set low under liquid and gas transfer conditions has been described, but the present invention is not limited thereto. Depending on the pattern formed on the substrate W, the moving speed corresponding to the center WC of the substrate W and its periphery may be set low and the moving speed corresponding to the outer edge of the substrate W and its periphery may be set high under liquid and gas transfer conditions.

[0173] (e) In the substrate processing apparatus 1 according to the above embodiment, the displacement liquid supply system 60 may be configured to supply displacement liquid L3 heated to a predetermined temperature to the nozzle device 100. Figure 26 is a schematic side view of the substrate processing apparatus 1 according to another embodiment. The differences between the configuration and operation of the substrate processing apparatus 1 in Figure 26 and the configuration and operation of the substrate processing apparatus 1 in Figure 1 according to the above embodiment will be explained.

[0174] As shown in Figure 26, in the substrate processing apparatus 1 of this example, the replacement liquid supply system 60 includes a replacement liquid supply source 63 and a replacement liquid temperature adjustment unit 64. The replacement liquid supply source 63 is composed of, for example, a tank in which the replacement liquid L3 is stored, and supplies the replacement liquid L3 to the replacement liquid temperature adjustment unit 64. The replacement liquid temperature adjustment unit 64 includes, for example, piping and a heater, and heats the replacement liquid L3 supplied from the replacement liquid supply source 63 to a temperature higher than room temperature (for example, 25°C). Specifically, the replacement liquid temperature adjustment unit 64 adjusts the temperature of the replacement liquid to, for example, 60°C to 70°C by heating the replacement liquid L3.

[0175] In this case, in the pre-processing step of the drying treatment, a displacement liquid at approximately 60°C to 70°C can be supplied from the displacement liquid supply system 60 to the nozzle device 100. As a result, the rinse liquid L2 remaining on the substrate W after the rinsing treatment is replaced by the displacement liquid L3 at a temperature higher than room temperature. Furthermore, by supplying the displacement liquid L3 at a temperature higher than room temperature to the substrate W, the temperature of the substrate W can be maintained at a temperature higher than room temperature. As a result, in the post-processing step of the drying treatment, the displacement liquid L3 on the substrate W evaporates more easily, and the drying time required for the substrate W can be shortened.

[0176] In the substrate processing apparatus 1 shown in Figure 26, the control unit 200 may adjust the temperature of the replacement liquid L3 supplied to each of the multiple parts (divided regions R1, R2) of the substrate W by controlling the replacement liquid temperature adjustment unit 64. For example, the control unit 200 may supply replacement liquid L3 at a first temperature to divided region R1 and supply replacement liquid L3 at a second temperature different from the first temperature to divided region R2 by controlling the replacement liquid temperature adjustment unit 64.

[0177] Let's explain a specific example. In the substrate processing apparatus 1 of this example, the temperature adjustment conditions are further stored in the memory device 204 (Figure 6) of the control unit 200. The displacement liquid temperature adjustment unit 64 is controlled based on the temperature adjustment conditions stored in the control unit 200.

[0178] Here, the temperature adjustment condition is a condition that defines the temperature to be adjusted for the replacement liquid L3 supplied to each of the multiple parts (divided regions R1, R2) of the substrate W when the replacement liquid L3 is supplied to the substrate W. More specifically, the temperature adjustment condition in this example is a condition that defines the temperature of the replacement liquid L3 to be supplied to each part of the substrate W when the nozzle device 100 is facing each part of the substrate W as the nozzle device 100 moves along the movement path MP.

[0179] Figure 27 shows an example of temperature control conditions. In Figure 27, the temperature control conditions are shown graphically. In the graph in Figure 27, the vertical axis represents the temperature of the displacement solution L3, and the horizontal axis represents the position on the migration path MP in Figure 7.

[0180] According to the temperature control conditions in Figure 27, the temperature of the replacement liquid L3 is set to be kept constant at a first temperature t01 when the nozzle device 100 is positioned facing the divided region R1 of the substrate W. On the other hand, the temperature of the replacement liquid L3 is set to be kept constant at a second temperature t02, which is higher than the first temperature t01, when the nozzle device 100 is positioned facing the divided region R2 of the substrate W.

[0181] In a rotating substrate W, the temperature of the peripheral portion of the substrate W tends to decrease compared to the central portion. Therefore, when a displacement liquid L3 at a predetermined temperature is supplied from the nozzle device 100 to the divided regions R1 and R2, the temperature of the displacement liquid L3 tends to decrease in the divided region R2 due to the temperature of the substrate W. The displacement efficiency of the rinse liquid L2 by the displacement liquid L3 is lower when the temperature of the displacement liquid L3 is lower, and higher when the temperature of the displacement liquid L3 is higher.

[0182] Therefore, in the temperature control conditions shown in Figure 27, the temperature of the replacement liquid L3 supplied to the outer edges of the substrate W and its vicinity is set to be higher than the temperature of the replacement liquid L3 supplied to the central part of the upper surface of the substrate W. As a result, the replacement efficiency of the rinse liquid L2 by the replacement liquid L3 is improved over the entire upper surface of the substrate W. In this example, the temperature control conditions are such that the first temperature t01 is, for example, 65°C, and the second temperature t02 is, for example, 70°C.

[0183] Figure 28 is a block diagram illustrating an example configuration of a functional unit for controlling based on liquid treatment conditions, gas treatment conditions, and temperature adjustment conditions. The differences between this example configuration in Figure 28 and the example in Figure 10 will be explained below.

[0184] As shown in Figure 28, the CPU 201 of the control unit 200 includes, in addition to the configuration in Figure 10, a temperature condition acquisition unit 217 and a liquid temperature control unit 218 as functional units for performing control based on liquid treatment conditions, gas treatment conditions, and temperature adjustment conditions. These functional units are realized when the CPU 201 of the control unit 200 executes a substrate cleaning program stored in the storage device 204. Note that some or all of the temperature condition acquisition unit 217 and the liquid temperature control unit 218 may be realized by hardware such as electronic circuits.

[0185] The operation reception unit 211 receives temperature adjustment conditions input from the operation unit 190. The operation reception unit 211 also stores the received temperature adjustment conditions in the storage device 204.

[0186] The temperature condition acquisition unit 217 acquires the temperature adjustment conditions stored in the storage device 204 when the substrate W is being dried. The temperature condition acquisition unit 217 also provides the acquired temperature adjustment conditions to the liquid temperature control unit 218.

[0187] The liquid temperature control unit 218 receives information from the horizontal movement control unit 214 indicating the position of the nozzle device 100 on the movement path MP. When replacing the rinse liquid L2 on the substrate W with replacement liquid L3 during the drying process of the substrate W, the liquid temperature control unit 218 controls the replacement liquid temperature adjustment unit 64 shown in Figure 27 based on the temperature adjustment conditions and the information provided by the horizontal movement control unit 214. As a result, the replacement liquid L3 is supplied to the nozzle device 100 at a temperature according to the temperature adjustment conditions, depending on the position of the nozzle device 100 relative to the substrate W.

[0188] Figure 29 is a flowchart showing the processing flow by the multiple functional units in Figure 28. Note that the processing flow by the multiple functional units in Figure 28 is the same as the processing flow shown in the flowcharts of Figures 11 and 12, with a few exceptions. Therefore, in Figure 29, some processing that is common to the processing described in Figures 11 and 12 is omitted from the illustration. The differences between the flowchart in Figure 29 and the examples in Figures 11 and 12 will now be explained.

[0189] In this example, when the drying process of the substrate W begins, the movement condition acquisition unit 212, the flow rate condition acquisition unit 213, and the temperature condition acquisition unit 217 acquire the liquid movement conditions, liquid flow rate conditions, and temperature adjustment conditions, respectively (step S10a). Next, the control unit 200 sequentially performs the processes in steps S11 to S15 of Figure 11.

[0190] Next, the liquid temperature control unit 218 determines the temperature of the replacement liquid L3 to be supplied to the nozzle device 100 at this time, based on the temperature adjustment conditions and the position of the nozzle device 100 detected in the processing of the preceding step S14 (step S15a).

[0191] Next, the displacement fluid flow rate control unit 215 and the fluid temperature control unit 218 control the displacement fluid supply system 60 to supply the displacement fluid L3 to the nozzle device 100 at the determined flow rate and temperature (step S16a). After that, the processes in steps S17 to S28 shown in Figures 11 and 12 are performed, and the series of processes is completed.

[0192] In the temperature control conditions shown in Figure 27, the temperature of the replacement fluid L3 supplied to the divided region R2 is set higher than the temperature of the replacement fluid L3 supplied to the divided region R1. However, depending on the type of rinse fluid L2 and replacement fluid L3, or the processing environment, the temperature of the replacement fluid L3 supplied to the divided region R2 may be set lower than the temperature of the replacement fluid L3 supplied to the divided region R1.

[0193] In the substrate processing apparatus 1 shown in Figure 26, a replacement liquid temperature adjustment unit 64 provided in the replacement liquid supply system 60 adjusts the temperature of the replacement liquid L3 supplied to the substrate W. However, the temperature of the replacement liquid L3 supplied to the substrate W may be adjusted indirectly via the substrate W.

[0194] Figure 30 is a schematic side view of a substrate processing apparatus 1 according to yet another embodiment. The substrate processing apparatus 1 in Figure 30 has a substrate temperature adjustment unit 65 instead of the displacement liquid temperature adjustment unit 64 in Figure 26. The substrate temperature adjustment unit 65 is configured to adjust the temperature of the substrate W held by the substrate holding unit 21.

[0195] Specifically, the substrate temperature adjustment unit 65 may be a back-rinsing device that supplies a processing liquid (e.g., pure water) at a temperature higher than room temperature to the lower peripheral edge of the substrate W held by the substrate holding unit 21. Alternatively, the substrate temperature adjustment unit 65 may be a heater provided, for example, inside the spin base 21a, which heats at least a portion of the substrate W. Alternatively, the substrate temperature adjustment unit 65 may be a liquid supply device that supplies a processing liquid (e.g., pure water) at a temperature higher than room temperature to the lower central part of the substrate W through the inside of the rotation shaft of the rotation drive unit 22.

[0196] In this case, the temperature adjustment conditions may include conditions for controlling the operation of the substrate temperature adjustment unit 65. The liquid temperature control unit 218 of the control unit 200 may control the substrate temperature adjustment unit 65 based on the temperature adjustment conditions and the position of the nozzle device 100 on the substrate W. For example, the liquid temperature control unit 218 may stop the operation of the substrate temperature adjustment unit 65 when the nozzle device 100 is facing the division region R1, and operate the substrate temperature adjustment unit 65 when the nozzle device 100 is facing the division region R2. This allows, for example, the temperature of the substrate W to be increased via the substrate W by raising the temperature of the substrate W only when the nozzle device 100 is in the division region R2.

[0197] Depending on the type of rinse liquid L2 and displacement liquid L3, or the processing environment, the liquid temperature control unit 218 may operate the substrate temperature adjustment unit 65 when the nozzle device 100 is facing the divided region R1, and stop operating the substrate temperature adjustment unit 65 when the nozzle device 100 is facing the divided region R2.

[0198] (f) In the substrate processing apparatus 1 according to the above embodiment, a mechanical chuck type spin chuck is used as the substrate holding part 21 to hold the outer peripheral edge of the substrate W, but the present invention is not limited thereto. A suction type spin chuck that suction-holds the central part of the lower surface of the substrate W can also be used as the substrate holding part 21.

[0199] (g) In the substrate processing apparatus 1 according to the above embodiment, the upper position of the outer cup 30A and the upper position of the inner cup 30B are the same, and the lower position of the outer cup 30A and the lower position of the inner cup 30B are the same, but the present invention is not limited thereto. The upper position of the outer cup 30A and the upper position of the inner cup 30B may be different from each other. Also, the lower position of the outer cup 30A and the lower position of the inner cup 30B may be different from each other. Furthermore, the outer cup 30A and the inner cup 30B may be configured to move up and down independently without interfering with each other. In this case, it is preferable that the nozzle upper position HP of the nozzle device 100 is set to a position above the upper end of the outer cup 30A in the upper position and the upper end of the inner cup 30B in the upper position.

[0200] (h) In the post-processing step of the drying treatment according to the above embodiment, in order to prevent interference between the nozzle device 100 and the outer cup 30A and inner cup 30B, the outer cup 30A and inner cup 30B are lowered from the upper cup position to the lower cup position while the nozzle device 100, which is located at the lower nozzle position LP, moves horizontally, but the present invention is not limited thereto.

[0201] If the nozzle device 100 is small enough, or for other reasons, and the nozzle device 100 does not interfere with the outer cup 30A and inner cup 30B which are in the cup-up position when the first gas is injected from the nozzle device 100 to the outer edge of the substrate W, the outer cup 30A and inner cup 30B may be held in the cup-up position during the drying process.

[0202] Furthermore, the range of horizontal movement of the nozzle device 100 may be limited if it is possible to inject the first gas over the entire pattern formation area on the substrate W by moving the nozzle device 100 horizontally within a range that does not interfere with the outer cup 30A and inner cup 30B which are in the cup-top position. Alternatively, the range of horizontal movement of the nozzle device 100 may be limited if it is possible to sufficiently dry the entire substrate W by moving the nozzle device 100 horizontally within a range that does not interfere with the outer cup 30A and inner cup 30B which are in the cup-top position. Here, limiting the range of horizontal movement of the nozzle device 100 means moving the nozzle device 100 horizontally within a range from the center of the substrate to a position a certain distance inward from the outer edge of the substrate. In these cases, the outer cup 30A and inner cup 30B may be held in the cup-top position during the drying process.

[0203] (i) The nozzle device 100 according to the above embodiment has two second gas injection ports 131 and a third gas injection port 132 formed on the outer peripheral surface 130, but the present invention is not limited thereto. One of the second gas injection port 131 and the third gas injection port 132 may not be formed.

[0204] (j) In the substrate processing apparatus 1 according to the above embodiment, the flow rates of the second and third gases injected from the nozzle device 100 when the first gas is supplied to each of the multiple parts (divided regions R1, R2) of the substrate W may be adjusted. A specific example of such a substrate processing apparatus 1 will be described.

[0205] In the substrate processing apparatus 1 of this example, the gas emission conditions are further stored in the memory device 204 (Figure 6) of the control unit 200. Based on the gas emission conditions stored in the control unit 200, the second gas supply system 80 (Figure 1) and the third gas supply system 90 (Figure 1) are controlled.

[0206] Here, the gas emission conditions are defined as the injection flow rates of the second and third gases to be injected from the nozzle device 100 into multiple parts (divided regions R1, R2) of the substrate W when the first gas is supplied to the substrate W. More specifically, the gas emission conditions in this example are defined as the flow rates of the second and third gases to be supplied to the nozzle device 100 when the nozzle device 100 is facing each part of the substrate W as it moves along the movement path MP.

[0207] Figure 31 shows an example of gaseous radiation conditions. In Figure 31, the gaseous radiation conditions are shown graphically. In the graph of Figure 31, the vertical axis represents the injection flow rates of the second and third gases ejected from the nozzle device 100, and the horizontal axis represents the position on the movement path MP in Figure 7.

[0208] According to the gas emission conditions in Figure 31, the injection flow rates of the second and third gases are set to be constant at a flow rate f21 when the nozzle device 100 is positioned facing the divided region R1 of the substrate W. On the other hand, when the nozzle device 100 is positioned facing the divided region R2 of the substrate W, the injection flow rates of the second and third gases are set to increase at a constant rate as the nozzle device 100 approaches the third position p3 from the second position p2. As a result, the injection flow rates of the second and third gases when the nozzle device 100 is at the third position p3 are a flow rate f22 which is greater than the injection flow rates (flow rate f21) of the second and third gases when the nozzle device 100 is at the second position p2. In the gas emission conditions of this example, the flow rate f21 is, for example, 72.5 (l / min), and the flow rate f22 is, for example, 150 (l / min).

[0209] When drying the substrate W by injecting the first gas into a divided region R2 that includes the outer edge of the substrate W, the displacement liquid L3 is more likely to scatter from the substrate W compared to when drying the substrate W by injecting the first gas into a divided region R1 located in the center of the substrate W.

[0210] Therefore, under the gas discharge conditions shown in Figure 31, the injection flow rates of the second and third gases when the nozzle device 100 is located on the divided region R2 are set to be higher than the injection flow rates of the second and third gases when the nozzle device 100 is located on the divided region R1. This suppresses the leakage of large amounts of droplets scattered from the substrate W into the space above the third gas injection port 132 (Figure 3) at the outer edge of the substrate W and its vicinity. In addition, it prevents contaminants and other substances floating in the space above the third gas injection port 132 (Figure 3) from falling onto the substrate W.

[0211] Figure 32 is a block diagram illustrating an example configuration of a functional unit for controlling based on liquid treatment conditions, gas treatment conditions, and gas discharge conditions. The differences between this example configuration in Figure 32 and the example in Figure 10 will be explained below.

[0212] As shown in Figure 32, the CPU 201 of the control unit 200 includes, in addition to the configuration in Figure 10, a radiation condition acquisition unit 219 and a second gas flow rate control unit 220 as functional units for performing control based on liquid treatment conditions, gas treatment conditions, and gas radiation conditions. These functional units are realized when the CPU 201 of the control unit 200 executes a substrate cleaning program stored in the storage device 204. Note that some or all of the radiation condition acquisition unit 219 and the second gas flow rate control unit 220 may be realized by hardware such as electronic circuits.

[0213] The operation reception unit 211 receives gas emission conditions input from the operation unit 190. The operation reception unit 211 also stores the received gas emission conditions in the memory device 204. The emission condition acquisition unit 219 acquires the gas emission conditions stored in the memory device 204 when the substrate W is to be dried. The emission condition acquisition unit 219 also provides the acquired gas emission conditions to the second gas flow rate control unit 220.

[0214] The second gas flow rate control unit 220 is provided with information from the horizontal movement control unit 214 indicating the position of the nozzle device 100 on the movement path MP. When removing the displacement liquid L3 from the substrate W during the drying process of the substrate W, the second gas flow rate control unit 220 controls the second gas supply system 80 and the third gas supply system 90 based on the gas emission conditions and the information provided by the horizontal movement control unit 214. As a result, the second gas and the third gas are ejected radially from the second gas injection port 131 and the third gas injection port 132 of the nozzle device 100 at a flow rate according to the gas emission conditions, depending on the position of the nozzle device 100 relative to the substrate W.

[0215] Figure 33 is a flowchart showing the processing flow by the multiple functional units in Figure 32. Note that the processing flow by the multiple functional units in Figure 32 is the same as the processing flow shown in the flowcharts of Figures 11 and 12, with a few exceptions. Therefore, in Figure 33, some processing that is common to the processing described in Figures 11 and 12 is omitted from the illustration. The differences between the flowchart in Figure 33 and the examples in Figures 11 and 12 will now be explained.

[0216] In this example, once the drying process of the substrate W begins, steps S10 to S18 in Figure 11 are performed. Subsequently, the movement condition acquisition unit 212, the flow rate condition acquisition unit 213, and the radiation condition acquisition unit 219 acquire the liquid movement conditions, liquid flow rate conditions, and gas radiation conditions, respectively (step S19a). Next, the control unit 200 sequentially performs steps S20 to S22 in Figure 12.

[0217] Next, the first gas flow control unit 216 and the second gas flow control unit 220 determine the flow rates of the first gas, the second gas, and the third gas to be supplied to the nozzle device 100 at that moment, based on the gas flow conditions, the gas discharge conditions, and the position of the nozzle device 100 detected in the processing of the preceding step S22 (step S23a).

[0218] Next, the first gas flow control unit 216 and the second gas flow control unit 220 control the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90 to supply the first gas, the second gas, and the third gas to the nozzle device 100 at the determined flow rates (step S24a). After that, the processes in steps S25 to S28 shown in Figures 11 and 12 are performed, and the series of processes is completed.

[0219] Furthermore, the second gas flow control unit 220 may control the second gas supply system 80 and the third gas supply system 90 shown in Figure 1 according to the gas emission conditions when replacing the rinse solution on the substrate W with the replacement solution during the drying process of the substrate W.

[0220] Furthermore, the gas emission conditions in Figure 31 are used in common for both the injection flow rate of the second gas and the injection flow rate of the third gas. However, the gas emission conditions corresponding to the injection flow rate of the second gas and the gas emission conditions corresponding to the injection flow rate of the third gas may be different from each other.

[0221] 11. Correspondence between each component of the claim and each part of the embodiment The following describes examples of the correspondence between each component of the claims and each element of the embodiments, but the present invention is not limited to the following examples. Various other elements having the configuration or function described in the claims can also be used as each component of the claims.

[0222] In the above embodiment, rinsing liquid L2 is an example of residual liquid, substrate processing apparatus 1 and substrate processing system 800 are examples of substrate processing apparatus, substrate holding unit 21 is an example of substrate holding unit, rotary drive unit 22 is an example of rotary drive unit, replacement liquid discharge port 62 is an example of liquid discharge unit, nozzle device 100 is an example of nozzle device, replacement liquid L3 is an example of processing liquid, and replacement liquid supply system 60 and first gas supply system 70 are examples of fluid supply systems.

[0223] Furthermore, the divided regions R1 and R2 of the substrate W are examples of multiple parts of the substrate, the nozzle moving device 150 is an example of a moving drive unit, the control unit 200, horizontal movement control unit 214, displacement liquid flow rate control unit 215 and the first gas flow rate control unit 216 are examples of control units, the first gas injection port 72 is an example of a first gas injection unit, the nozzle upper position HP is an example of an upper position, the nozzle lower position LP is an example of a lower position, and the second gas injection port 131 is an example of a second gas injection unit.

[0224] 12. Summary of Embodiments (Paragraph 1) The substrate processing apparatus relating to Paragraph 1 is: A substrate processing apparatus for removing residual liquid remaining on a substrate after pattern formation from the substrate, A rotation drive unit that rotates the substrate holding part that holds the substrate, A nozzle device having a liquid dispensing section, The nozzle device is provided with a fluid supply system that supplies a processing liquid having a lower surface tension than the residual liquid, A moving drive unit moves the nozzle device, which is in one position, to multiple different parts in the radial direction of the substrate while maintaining it in a position above the substrate held by the substrate holding unit, The system includes a control unit that controls the fluid supply system and the mobile drive unit according to the liquid processing conditions, The liquid discharge section is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the first position. The aforementioned liquid treatment conditions are: Liquid flow rate conditions that define the flow rate of the processing liquid to be supplied to the nozzle device in each of the aforementioned plurality of parts, The system includes liquid transfer conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the processing liquid to each of the plurality of parts of the substrate.

[0225] This substrate processing apparatus adjusts the amount of processing liquid supplied to each of the multiple parts of the substrate. It also adjusts the movement speed of the nozzle device when moving over each of the multiple parts of the substrate. This allows for the appropriate replacement of residual liquid on the substrate with processing liquid according to the specific part of the substrate. Therefore, it becomes possible to properly remove residual liquid from the substrate. Furthermore, it becomes possible to reduce the consumption of processing liquid. As a result, it becomes possible to process the substrate with high precision while suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0226] (Paragraph 2) In the substrate processing apparatus relating to Paragraph 1, The nozzle device further comprises a first gas injection section, The fluid supply system is configured to supply the first gas to the nozzle device, The first gas injection unit is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first position. The control unit, The fluid supply system and the moving drive unit may be controlled so that, while the processing liquid is present on the substrate held by the substrate holding unit, the first gas is injected onto the substrate from the first gas injection unit of the nozzle device.

[0227] In this case, the first gas can be sprayed onto the substrate from the nozzle device. This replaces the residual liquid on the substrate with the processing liquid, and then the processing liquid on the substrate can be blown off by spraying the first gas onto various parts of the substrate. This allows the substrate to be dried.

[0228] (Paragraph 3) In the substrate processing apparatus relating to Paragraph 2, The control unit controls the fluid supply system and the mobile drive unit according to the gas processing conditions. The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, The system may also include gas movement conditions that define the moving speed of the nozzle device when moving over each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

[0229] In this case, the amount of the first gas supplied to each of the multiple parts of the substrate is adjusted. Additionally, the movement speed of the nozzle device when moving over each of the multiple parts of the substrate is adjusted. This allows the processing liquid remaining on the substrate to be appropriately replaced with the first gas according to the part of the substrate. Therefore, it becomes possible to properly remove the processing liquid from the substrate. Furthermore, it becomes possible to reduce the consumption of the first gas. As a result, it becomes possible to process the substrate with higher precision while further suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0230] (Paragraph 4) In the substrate processing apparatus relating to Paragraph 3, The moving drive unit is capable of moving the nozzle device, which is in one position, between an upper position, which is a predetermined distance above the substrate held by the substrate holding unit, and a lower position, which is below the upper position and above the substrate. The control unit, The rotation drive unit is controlled so that the substrate held by the substrate holding unit rotates. With the residual liquid present on the substrate held by the substrate holding unit, the control of the fluid supply system and the moving drive unit is performed as liquid displacement control according to the liquid treatment conditions. After the liquid displacement control, with the processing liquid present on the substrate, a first gas displacement control is performed to control the moving drive unit so that the nozzle device is positioned in the upper position and the first gas injection unit faces the center of the substrate. After the first gas displacement control, a second gas displacement control is performed to control the fluid supply system and the moving drive unit so that the nozzle device descends from the upper position to the lower position while the first gas is ejected from the first gas injection unit. After the second gas displacement control, a third gas displacement control may be performed in which, with the nozzle device in the lower position, the first gas is injected from the first gas injection unit, and the nozzle device in the lower position moves from the center of the substrate toward the outer edge of the substrate, thereby controlling the fluid supply system and the movement drive unit.

[0231] In this case, residual liquid on the substrate is replaced with the processing liquid by liquid displacement control. Subsequently, by the first gas displacement control, the nozzle device is positioned in the upper position, and the first gas injection part faces the center of the substrate. In this state, by the second gas displacement control, gas is injected downward from the first gas injection part of the nozzle device. The nozzle device descends from the upper position to the lower position while the state of downward gas injection from the first gas injection part is maintained. At this time, the degree of impact generated when the first gas injected from the first gas injection part collides with the substrate gradually increases as the nozzle device moves from the upper position to the lower position. Therefore, the change in impact applied to the processing liquid on the substrate is mitigated compared to when the injection of the first gas is started with the nozzle device in the lower position. Consequently, the scattering of the processing liquid generated when the first gas collides with the substrate is reduced. As a result, the decrease in the cleanliness of the substrate due to the processing liquid scattered from the substrate re-adhering to the substrate is suppressed.

[0232] After pattern formation, numerous grooves with depths perpendicular to the substrate are formed on the substrate. With the above configuration, the third gas displacement control allows the first gas to be injected perpendicular to the substrate over a wide area of ​​the upper surface of the substrate. As a result, the processing liquid remaining inside the grooves on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate dries. During this drying process, the processing liquid removed from the substrate has a lower surface tension than the residual liquid, so the pattern formed on the substrate is less susceptible to damage caused by the surface tension of the processing liquid. As a result, it becomes possible to appropriately remove residual liquid remaining on the substrate after pattern formation.

[0233] (Paragraph 5) In the substrate processing apparatus relating to Paragraph 4, The third gas displacement control may also include the control unit controlling the fluid supply system and the mobile drive unit according to the gas processing conditions.

[0234] In this case, the substrate can be properly dried in the third gas displacement control. Furthermore, it becomes possible to reduce the consumption of the first gas. In other words, it becomes possible to process the substrate with higher precision while further suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0235] (Paragraph 6) In a substrate processing apparatus relating to Paragraph 4 or Paragraph 5, The nozzle device further comprises a second gas injection section, The fluid supply system is configured to supply a second gas to the nozzle device, The second gas injection unit is configured to inject the second gas supplied from the fluid supply system radially toward the outer edge of the substrate in a plan view, when the nozzle device is in the first position and positioned in the space above the substrate held by the substrate holding unit. The control unit, The fluid supply system may be further controlled so that the second gas is injected from the second gas injection unit while the second gas displacement control and the third gas displacement control are being performed.

[0236] In this case, while the second gas displacement control and the third gas displacement control are being performed, a second gas flow is formed above the substrate, spreading planarly in a direction parallel to the upper surface of the substrate. This suppresses particles scattered above the second gas injection section from falling onto the substrate. Therefore, the decrease in the cleanliness of the substrate after drying is suppressed.

[0237] (Paragraph 7) The substrate processing apparatus relating to Paragraph 7 is: A substrate processing apparatus for removing a processing liquid remaining on a substrate after pattern formation and drying the substrate, A rotation drive unit that rotates the substrate holding part that holds the substrate, A nozzle device having a first gas injection section, The nozzle device is provided with a fluid supply system that supplies a first gas, A moving drive unit moves the nozzle device, which is in one position, to multiple different parts in the radial direction of the substrate while maintaining it in a position above the substrate held by the substrate holding unit, The system comprises a control unit that controls the fluid supply system and the mobile drive unit according to the gas processing conditions, The first gas injection unit is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first position. The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, The gas movement conditions include defining the moving speed of the nozzle device when moving over each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

[0238] According to this substrate processing apparatus, the amount of first gas supplied to each of the multiple parts of the substrate is adjusted. Furthermore, the movement speed of the nozzle device when moving over each of the multiple parts of the substrate is adjusted. This allows the processing liquid remaining on the substrate to be appropriately blown away with the first gas according to the part of the substrate. Therefore, it becomes possible to properly remove the processing liquid from the substrate. In addition, it becomes possible to reduce the consumption of the first gas. As a result, it becomes possible to process the substrate with high precision while suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0239] (Paragraph 8) In the substrate processing apparatus relating to Paragraph 7, The processing liquid is used to remove residual liquid remaining on the substrate after pattern formation, and has a lower surface tension than the residual liquid. The moving drive unit is capable of moving the nozzle device, which is in one position, between an upper position, which is a predetermined distance above the substrate held by the substrate holding unit, and a lower position, which is below the upper position and above the substrate. The control unit, The rotation drive unit is controlled so that the substrate held by the substrate holding unit rotates. With the substrate having the processing liquid that has replaced the residual liquid, a first gas displacement control is performed to control the moving drive unit so that the nozzle device is positioned in the upper position and the first gas injection unit faces the center of the substrate. After the first gas displacement control, a second gas displacement control is performed to control the fluid supply system and the moving drive unit so that the nozzle device descends from the upper position to the lower position while the first gas is ejected from the first gas injection unit. After the second gas displacement control, with the nozzle device in the lower position, the control of the fluid supply system and the mobile drive unit according to the gas processing conditions may be performed as a third gas displacement control.

[0240] In this case, the first gas displacement control positions the nozzle device in the upper position, and the first gas injection part faces the center of the substrate. In this state, the second gas displacement control causes gas to be injected downward from the first gas injection part of the nozzle device. The nozzle device descends from the upper position to the lower position while the state of gas being injected downward from the first gas injection part is maintained. At this time, the degree of impact generated when the first gas injected from the first gas injection part collides with the substrate gradually increases as the nozzle device moves from the upper position to the lower position. Therefore, the change in impact applied to the processing liquid on the substrate is mitigated compared to when the injection of the first gas is started with the nozzle device in the lower position. Consequently, the scattering of the processing liquid caused by the collision of the first gas with the substrate is reduced. As a result, the decrease in the cleanliness of the substrate due to the processing liquid scattered from the substrate re-adhering to the substrate is suppressed.

[0241] After pattern formation, numerous grooves with depths perpendicular to the substrate are formed on the substrate. With the above configuration, the third gas displacement control allows the first gas to be injected perpendicular to the substrate over a wide area of ​​the upper surface of the substrate. As a result, the processing liquid remaining inside the grooves on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate dries. During this drying process, the processing liquid removed from the substrate has a lower surface tension than the residual liquid, so the pattern formed on the substrate is less susceptible to damage caused by the surface tension of the processing liquid. As a result, it becomes possible to appropriately remove residual liquid remaining on the substrate after pattern formation.

[0242] (Paragraph 9) In the substrate processing apparatus relating to Paragraph 8, The nozzle device further comprises a liquid discharge section, The fluid supply system is configured to supply the processing liquid to the nozzle device, The liquid discharge section is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the first position. The control unit, With the residual liquid present on the substrate held by the substrate holding unit, liquid displacement control is performed to control the fluid supply system and the moving drive unit so that the processing liquid is discharged onto the substrate from the liquid discharge unit of the nozzle device. The first gas displacement control may be performed after the liquid displacement control.

[0243] In this case, the processing liquid can be discharged from the nozzle device onto the substrate. This allows the residual liquid on the substrate to be replaced with the processing liquid. Subsequently, the processing liquid on the substrate can be blown off by spraying the first gas onto various parts of the substrate. This dries the substrate.

[0244] (Paragraph 10) In the substrate processing apparatus relating to Paragraph 9, The control unit performs the liquid replacement control by controlling the fluid supply system and the movement drive unit according to liquid treatment conditions. The liquid treatment conditions are as follows. a liquid flow rate condition that determines the flow rate of the treatment liquid to be supplied to the nozzle device in each of the plurality of portions; and a liquid movement condition that determines the movement speed of the nozzle device when moving each of the plurality of portions of the substrate to supply the treatment liquid to each of the plurality of portions of the substrate.

[0245] In this case, the amount of the treatment liquid supplied to each of the plurality of portions of the substrate is adjusted. Further, the movement speed of the nozzle device when moving each of the plurality of portions of the substrate is adjusted. Thereby, the residual liquid remaining on the substrate can be appropriately replaced with the treatment liquid according to the portion of the substrate. For this reason, the residual liquid on the substrate can be appropriately removed. Further, the consumption amount of the treatment liquid can be reduced. As a result, it is possible to further suppress the consumption of the fluid resources used for the treatment of the substrate after the pattern formation and to perform the treatment of the substrate with higher accuracy.

[0246] (Item 11) In the substrate processing apparatus according to any one of Items 8 to 10, the nozzle device further includes a second gas injection unit, the fluid supply system is configured to supply a second gas to the nozzle device, the second gas injection unit is formed to inject the second gas supplied from the fluid supply system radially toward the outer peripheral end portion of the substrate in a plan view in a state where the nozzle device is in the one posture and is disposed in a space above the substrate held by the substrate holding unit, the control unit, may further control the fluid supply system so that the second gas is injected from the second gas injection unit while the second gas replacement control and the third gas replacement control are being performed.

[0247] In this case, while the second gas replacement control and the third gas replacement control are being performed, a flow of the second gas is formed in a direction parallel to the upper surface of the substrate and spreading planar above the substrate. Thereby, particles scattered above the second gas injection part are suppressed from falling onto the substrate. Therefore, a decrease in the cleanliness of the substrate after drying is suppressed.

[0248] (Item 12) The substrate processing method according to Item 12 is a substrate processing method for removing a residual liquid remaining on a substrate after pattern formation from the substrate using a nozzle device, where the nozzle device has a liquid discharge part, the liquid discharge part is formed to discharge the processing liquid supplied to the nozzle device downward in a state where the nozzle device is in a certain posture, the processing liquid has a lower surface tension than the residual liquid, the substrate processing method is a step of rotating the substrate while holding the substrate by a substrate holding part; a step of moving the nozzle device in a certain posture to a plurality of different portions in the radial direction of the substrate while maintaining the nozzle device above the substrate held by the substrate holding part according to liquid processing conditions, and supplying the processing liquid to the plurality of portions of the substrate, the liquid processing conditions are a liquid flow rate condition that determines the flow rate of the processing liquid to be supplied to the nozzle device in each respective one of the plurality of portions, and a liquid movement condition that determines the movement speed of the nozzle device when moving each respective one of the plurality of portions to supply the processing liquid to the plurality of portions of the substrate, a substrate processing method.

[0249] According to this substrate processing method, the amount of processing liquid supplied to each of the multiple parts of the substrate is adjusted. Furthermore, the movement speed of the nozzle device when moving over each of the multiple parts of the substrate is adjusted. This allows for the appropriate replacement of residual liquid remaining on the substrate with processing liquid according to the specific part of the substrate. Therefore, it becomes possible to properly remove residual liquid from the substrate. Additionally, it becomes possible to reduce the consumption of processing liquid. As a result, it becomes possible to process the substrate with higher precision while suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0250] (Paragraph 13) The substrate processing method relating to Paragraph 13 is: A substrate processing method comprising using a nozzle device to remove residual processing liquid from a substrate after pattern formation and drying the substrate, The nozzle device has a gas injection section, The gas injection unit is configured to inject the first gas supplied to the nozzle device downwards when the nozzle device is in one position. The substrate processing method is The steps include: rotating the substrate while holding it with the substrate holding part; The process includes the steps of: moving the nozzle device, which is in one position, to a plurality of different radial portions of the substrate while maintaining it in a position above the substrate held by the substrate holding portion, according to the gas processing conditions, and injecting the first gas into the plurality of portions of the substrate; The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, A substrate processing method, comprising gas movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

[0251] According to this substrate processing apparatus, the amount of first gas supplied to each of the multiple parts of the substrate is adjusted. Furthermore, the movement speed of the nozzle device when moving over each of the multiple parts of the substrate is adjusted. This allows the processing liquid remaining on the substrate to be appropriately blown away with the first gas according to the part of the substrate. Therefore, it becomes possible to properly remove the processing liquid from the substrate. In addition, it becomes possible to reduce the consumption of the first gas. As a result, it becomes possible to process the substrate with high precision while suppressing the consumption of fluid resources used for processing the substrate after pattern formation.

[0252] (Paragraph 14) In a substrate processing apparatus relating to any one of paragraphs 1 to 6, The substrate processing apparatus is The nozzle device further comprises a temperature adjustment unit for adjusting the temperature of the processing liquid discharged from the nozzle device onto the substrate held by the substrate holding unit, or the temperature of the processing liquid on the substrate. The control unit may control the temperature adjustment unit according to temperature adjustment conditions that define the temperature to be adjusted of the processing liquid supplied to each of the plurality of parts.

[0253] In this case, the temperature of the processing solution supplied to multiple parts of the substrate is adjusted. Therefore, each of the multiple parts of the substrate can be supplied with processing solution adjusted to the appropriate temperature. As a result, improvements in the processing efficiency of the substrate are achieved.

[0254] (Paragraph 15) In the substrate processing apparatus relating to Paragraph 6, The control unit may further control the fluid supply system according to gas discharge conditions that define the flow rate of the second gas to be supplied to the nozzle device in each of the plurality of parts.

[0255] In this case, when the nozzle device is positioned at each of a plurality of portions of the substrate, the flow rate of the second gas jetted radially from the nozzle device is adjusted. That is, according to the position of the nozzle device on the substrate, the degree of the effect obtained by jetting the second gas is appropriately adjusted. Therefore, it is possible to suppress waste of the second gas and suppress a decrease in the cleanliness of the substrate after drying.

[0256] (Item 16) In the substrate processing apparatus according to Item 9 or Item 10, the substrate processing apparatus further includes a temperature adjustment unit that adjusts the temperature of the processing liquid discharged from the nozzle device to the substrate held by the substrate holding unit or the processing liquid on the substrate, and the control unit may control the temperature adjustment unit according to temperature adjustment conditions that define the temperature to be adjusted for the processing liquid supplied to each of the plurality of portions.

[0257] In this case, the temperature of the processing liquid supplied to a plurality of portions of the substrate is adjusted. Therefore, it is possible to supply the processing liquid adjusted to an appropriate temperature to each of the plurality of portions of the substrate. As a result, improvement in the processing efficiency of the substrate and the like are realized.

[0258] (Item 17) In the substrate processing apparatus according to Item 11, the control unit may further control the fluid supply system according to gas emission conditions that define the flow rate of the second gas to be supplied to the nozzle device in each of the plurality of portions.

[0259] In this case, when the nozzle device is positioned at each of a plurality of portions of the substrate, the flow rate of the second gas jetted radially from the nozzle device is adjusted. That is, according to the position of the nozzle device on the substrate, the degree of the effect obtained by jetting the second gas is appropriately adjusted. Therefore, it is possible to suppress waste of the second gas and suppress a decrease in the cleanliness of the substrate after drying.

Explanation of Signs

[0260] 1...Substrate processing device, 20...Substrate holding device, 21...Substrate holding part, 21a...Spin base, 21b...Holding pin, 22...Rotation drive unit, 30...Cup device, 30A...Outer cup, 30B...Inner cup, 31...Cup drive unit, 39...Drainage device, 39A...Outer container, 39B...Inner container, 40...Chemical solution supply device, 41...Chemical solution nozzle, 50...Rinse solution supply system, 51...Rinse solution nozzle, 60...Replacement fluid supply system, 61...Replacement fluid piping, 62...Replacement fluid outlet, 63...Replacement fluid supply source, 64...Replacement fluid temperature adjustment unit, 65...Substrate temperature adjustment unit, 70...First gas 71...Gas supply system, 72...First gas piping, 80...Second gas supply system, 81...Second gas piping, 90...Third gas supply system, 91...Third gas piping, 100...Nozzle device, 101...Nozzle body, 102...Through hole, 103...Through hole, 110...Top surface, 120...Bottom surface, 130...Outer surface, 131...Second gas injection port, 132...Third gas injection port, 141...Gas flow path, 142...Gas flow path, 150...Nozzle moving device, 151...Horizontal drive device, 152...Vertical drive device, 153...Base, 154...Support Axis, 155…Arm, 190…Operation Unit, 200…Control Unit, 201…CPU, 202…RAM, 203…ROM, 204…Storage Device, 209…CD-ROM, 211…Operation Reception Unit, 212…Movement Condition Acquisition Unit, 213…Flow Rate Condition Acquisition Unit, 214…Horizontal Movement Control Unit, 215…Displacement Liquid Flow Rate Control Unit, 216…First Gas Flow Rate Control Unit, 217…Temperature Condition Acquisition Unit, 218…Liquid Temperature Control Unit, 219…Radiation Condition Acquisition Unit, 220…Second Gas Flow Rate Control Unit, 800…Substrate Processing System, 801…Substrate Loading / Unloading Unit, 802…Substrate Processing Unit ,810…Carrier mounting platform,821…Transport robot,822…Transport robot,830…Control device,C…Carrier,CH…Chamber,HP…Nozzle upper position,L1…Chemical solution,L2…Rinse solution,L3…Displacement solution,LP…Nozzle lower position,MP…Movement path,R1,R2…Divided region,W…Substrate,WC…Center,WP…Standby position,f01,f02,f11,f12,f21,f22…Flow rate,p1…First position,p2…Second position,p3…Third position,t0…First temperature,t02…Second temperature,v01,v02,v11,v12…Speed

Claims

1. A substrate processing apparatus for removing residual liquid remaining on a substrate after pattern formation from the substrate, A rotation drive unit that rotates the substrate holding part that holds the substrate, A nozzle device having a liquid dispensing section, The nozzle device is provided with a fluid supply system that supplies a processing liquid having a lower surface tension than the residual liquid, A moving drive unit moves the nozzle device, which is in one position, to multiple different parts in the radial direction of the substrate while maintaining it in a position above the substrate held by the substrate holding unit, The system includes a control unit that controls the fluid supply system and the mobile drive unit according to the liquid processing conditions, The liquid discharge section is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the first position. The aforementioned liquid treatment conditions are: Liquid flow rate conditions that define the flow rate of the processing liquid to be supplied to the nozzle device in each of the aforementioned plurality of parts, A substrate processing apparatus comprising liquid transfer conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the processing liquid to each of the plurality of parts of the substrate.

2. The nozzle device further comprises a first gas injection section, The fluid supply system is configured to supply the first gas to the nozzle device. The first gas injection unit is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first position. The control unit, The substrate processing apparatus according to claim 1, wherein the fluid supply system and the moving drive unit are controlled so that the first gas is injected onto the substrate from the first gas injection unit of the nozzle device while the processing liquid is present on the substrate held by the substrate holding unit.

3. The control unit controls the fluid supply system and the mobile drive unit according to the gas processing conditions. The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, The substrate processing apparatus according to claim 2, further comprising gas movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

4. The moving drive unit is capable of moving the nozzle device, which is in one position, between an upper position, which is a predetermined distance above the substrate held by the substrate holding unit, and a lower position, which is below the upper position and above the substrate. The control unit, The rotation drive unit is controlled so that the substrate held by the substrate holding unit rotates. With the residual liquid present on the substrate held by the substrate holding unit, the control of the fluid supply system and the moving drive unit is performed as liquid displacement control according to the liquid treatment conditions. After the liquid displacement control, with the processing liquid present on the substrate, a first gas displacement control is performed to control the moving drive unit so that the nozzle device is positioned in the upper position and the first gas injection unit faces the center of the substrate. After the first gas displacement control, a second gas displacement control is performed to control the fluid supply system and the moving drive unit so that the nozzle device descends from the upper position to the lower position while the first gas is injected from the first gas injection unit. The substrate processing apparatus according to claim 3, wherein, after the second gas displacement control, a third gas displacement control is performed in which, with the nozzle device in the lower position, the first gas is injected from the first gas injection unit, and the fluid supply system and the movement drive unit are controlled so that the nozzle device in the lower position moves from the center of the substrate toward the outer edge of the substrate.

5. The substrate processing apparatus according to claim 4, wherein the third gas displacement control includes the control unit controlling the fluid supply system and the moving drive unit according to the gas processing conditions.

6. The nozzle device further comprises a second gas injection section, The fluid supply system is configured to supply a second gas to the nozzle device, The second gas injection unit is formed to inject the second gas supplied from the fluid supply system radially toward the outer edge of the substrate in a plan view, when the nozzle device is in the first position and is positioned in the space above the substrate held by the substrate holding unit. The control unit, The substrate processing apparatus according to claim 4 or 5, further controlling the fluid supply system so that the second gas is injected from the second gas injection unit while the second gas replacement control and the third gas replacement control are being performed.

7. A substrate processing apparatus for removing a processing liquid remaining on a substrate after pattern formation and drying the substrate, A rotation drive unit that rotates the substrate holding part that holds the substrate, A nozzle device having a first gas injection section, The nozzle device is provided with a fluid supply system that supplies a first gas, A moving drive unit moves the nozzle device, which is in one position, to multiple different parts in the radial direction of the substrate while maintaining it in a position above the substrate held by the substrate holding unit, The system comprises a control unit that controls the fluid supply system and the mobile drive unit according to the gas processing conditions, The first gas injection unit is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first position. The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, A substrate processing apparatus comprising gas movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

8. The processing liquid is used to remove residual liquid remaining on the substrate after pattern formation, and has a lower surface tension than the residual liquid. The moving drive unit is capable of moving the nozzle device, which is in one position, between an upper position, which is a predetermined distance above the substrate held by the substrate holding unit, and a lower position, which is below the upper position and above the substrate. The control unit, The rotation drive unit is controlled so that the substrate held by the substrate holding unit rotates. With the substrate having the processing liquid that has replaced the residual liquid, a first gas displacement control is performed to control the moving drive unit so that the nozzle device is positioned in the upper position and the first gas injection unit faces the center of the substrate. After the first gas displacement control, a second gas displacement control is performed to control the fluid supply system and the moving drive unit so that the nozzle device descends from the upper position to the lower position while the first gas is injected from the first gas injection unit. The substrate processing apparatus according to claim 7, wherein, after the second gas displacement control, with the nozzle device in the lower position, the control of the fluid supply system and the moving drive unit according to the gas processing conditions is performed as a third gas displacement control.

9. The nozzle device further comprises a liquid discharge section, The fluid supply system is configured to supply the processing liquid to the nozzle device, The liquid discharge section is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the first position. The control unit, With the residual liquid present on the substrate held by the substrate holding unit, liquid displacement control is performed to control the fluid supply system and the moving drive unit so that the processing liquid is discharged onto the substrate from the liquid discharge unit of the nozzle device. The substrate processing apparatus according to claim 8, wherein the first gas displacement control is performed after the liquid displacement control.

10. The control unit performs the liquid replacement control by controlling the fluid supply system and the moving drive unit according to the liquid treatment conditions. The aforementioned liquid treatment conditions are: Liquid flow rate conditions that define the flow rate of the processing liquid to be supplied to the nozzle device in each of the aforementioned plurality of parts, The substrate processing apparatus according to claim 9, further comprising liquid transfer conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the processing liquid to each of the plurality of parts of the substrate.

11. The nozzle device further comprises a second gas injection section, The fluid supply system is configured to supply a second gas to the nozzle device, The second gas injection unit is formed to inject the second gas supplied from the fluid supply system radially toward the outer edge of the substrate in a plan view, when the nozzle device is in the first position and is positioned in the space above the substrate held by the substrate holding unit. The control unit, The substrate processing apparatus according to any one of claims 8 to 10, further controlling the fluid supply system so that the second gas is injected from the second gas injection unit while the second gas replacement control and the third gas replacement control are being performed.

12. A substrate processing method for removing residual liquid remaining on a substrate after pattern formation using a nozzle device, The nozzle device has a liquid discharge section, The liquid discharge section is formed to discharge the processing liquid supplied to the nozzle device downward when the nozzle device is in one position. The processing liquid has a lower surface tension than the residual liquid. The substrate processing method is The steps include: rotating the substrate while holding it with the substrate holding part; The process includes the steps of: moving the nozzle device, which is in one position, to a plurality of different radial portions of the substrate while maintaining it in a position above the substrate held by the substrate holding portion, according to the liquid processing conditions, and supplying the processing liquid to the plurality of portions of the substrate; The aforementioned liquid treatment conditions are: Liquid flow rate conditions that define the flow rate of the processing liquid to be supplied to the nozzle device in each of the aforementioned plurality of parts, A substrate processing method, comprising liquid transfer conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply processing liquid to each of the plurality of parts of the substrate.

13. A substrate processing method comprising using a nozzle device to remove residual processing liquid from a substrate after pattern formation and drying the substrate, The nozzle device has a gas injection section, The gas injection unit is configured to inject the first gas supplied to the nozzle device downwards when the nozzle device is in one position. The substrate processing method is The steps include: rotating the substrate while holding it with the substrate holding part; The process includes the steps of: moving the nozzle device, which is in one position, to a plurality of different radial portions of the substrate while maintaining it in a position above the substrate held by the substrate holding portion, according to the gas processing conditions, and injecting the first gas into the plurality of portions of the substrate; The aforementioned gas treatment conditions are: A gas flow rate condition that determines the flow rate of the first gas to be supplied to the nozzle device in each of the aforementioned plurality of parts, A substrate processing method, comprising gas movement conditions that define the moving speed of the nozzle device when moving each of the plurality of parts of the substrate in order to supply the first gas to each of the plurality of parts of the substrate.

Images