Multilayer electronic components

Abstract

To provide a multilayer electronic component that offers excellent heat dissipation performance while also possessing superior mechanical strength and equivalent series resistance (ESR) characteristics. [Solution] A stacked electronic component according to one embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer, external electrodes 130 and 140 arranged on the body and connected to the internal electrodes, and interface layers 151 and 152 arranged between the body and the external electrodes, wherein the interface layers include an oxide containing a crystalline conductive metal. A plurality of interface layers are arranged, and the plurality of interface layers are spaced apart from each other in a direction in which the dielectric layer and the internal electrodes are arranged alternately.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Currently, as electronic devices become smaller, the demand for miniaturization and high integration of multilayer electronic components is also increasing. In particular, in the case of multilayer ceramic capacitors (MLCCs), which are general-purpose electronic components, various attempts have been made to make them thinner and increase their capacitance.

[0004] As MLCCs become thinner or their capacitance increases, the problem of decreased reliability in multilayer electronic components frequently occurs. MLCCs generate heat in most operating environments, and if this heat cannot be effectively dissipated, problems such as decreased performance and shortened lifespan can occur.

[0005] In particular, with high-capacity and small-sized MLCCs, the problem of heat generation can become even more pronounced as the current density increases.

[0006] Conventional approaches to efficiently dissipate heat from MLCCs include using materials with high thermal conductivity for the dielectric layer or modifying the structure of the internal electrodes themselves.

[0007] When using a material with high thermal conductivity for the dielectric layer, it is necessary to add a separate ceramic additive to the dielectric layer, which may result in a negative effect of reduced capacitance per unit volume. Furthermore, changing the structure of the internal electrodes themselves requires changing their shape, which may make them unsuitable for mass production. It may also be difficult to ensure sufficient capacitance per unit volume, and structural changes in the internal electrodes and dielectric layer may lead to a decrease in reliability.

[0008] Therefore, structural improvements to MLCCs are needed that can enhance heat dissipation efficiency while suppressing a decrease in reliability and capacity. [Overview of the project] [Problems that the invention aims to solve]

[0009] One of the several objectives of the present invention is to mitigate the problem of reduced heat dissipation performance due to structural defects at the interface between the external electrode and the main body.

[0010] One of the several objectives of the present invention is to mitigate the problem of reduced bonding force between the main body and the external electrode when an interfacial layer is formed at the interface between the external electrode and the main body in order to improve heat dissipation performance.

[0011] However, the objectives of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0012] A stacked electronic component according to one embodiment of the present invention includes a body containing a dielectric layer, internal electrodes arranged alternately with the dielectric layer, external electrodes disposed on the body and connected to the internal electrodes, and an interface layer disposed between the body and the external electrodes, wherein the interface layer may include an oxide containing a crystalline conductive metal. [Effects of the Invention]

[0013] One of the effects of the present invention is to provide a laminated electronic component with suppressed heat dissipation and excellent heat radiation performance.

[0014] One of the effects of the present invention is to provide a laminated electronic component that is excellent in heat radiation performance, mechanical strength, and ESR characteristics.

[0015] However, the diverse and beneficial advantages and effects of the present invention are not limited to the above content and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0016] [Figure 1] It schematically shows a perspective view of a laminated electronic component according to an embodiment of the present invention. [Figure 2] It schematically shows a cross-sectional view taken along line I-I' of FIG. 1. [Figure 3] It schematically shows a cross-sectional view taken along line II-II' of FIG. 1. [Figure 4] It schematically shows an enlarged view of the P region in FIG. 2. [Figure 5] It is a schematic diagram obtained by enlarging and schematizing the Q region in FIG. 4. [Figure 6] In a laminated electronic component according to an embodiment, it schematically shows a cross-sectional view corresponding to FIG. 2. [Figure 7] It schematically shows an enlarged view of the R region in FIG. 6. [Figure 8] It is an exploded perspective view showing the configuration of a main body according to an embodiment. [Figure 9] (a) and (b) schematically show partial plan views of a method for manufacturing a laminated electronic component according to an embodiment.

Modes for Carrying Out the Invention

[0017] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape, size, etc. of the elements in the drawings can be exaggerated for a clearer explanation, and the elements indicated by the same reference numerals in the drawings are the same elements.

[0018] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this does not exclude other components unless there is a contrary description, and it means that other components may be further included.

[0019] In the drawings, the first direction can be defined as the direction in which the first internal electrode and the second internal electrode are alternately arranged across the dielectric layer or the x direction, and among the second direction and the third direction which are perpendicular to the first direction, the second direction is the y direction and the third direction is the z direction.

[0020] FIG. 1 schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a cross-sectional view taken along the line I-I' of FIG. 1, FIG. 3 schematically shows a cross-sectional view taken along the line II-II' of FIG. 1, FIG. 4 schematically shows an enlarged view of the P region of FIG. 2, FIG. 5 is a schematic diagram obtained by enlarging and schematizing the Q region of FIG. 4, FIG. 6 schematically shows a cross-sectional view corresponding to FIG. 2 in a multilayer electronic component according to an embodiment, FIG. 7 schematically shows an enlarged view of the P' region of FIG. 6, FIG. 8 is an exploded perspective view showing the configuration of a main body according to an embodiment, and FIGS. 9(a) and (b) schematically show partial plan views of a method for manufacturing a multilayer electronic component according to an embodiment.

[0021] Hereinafter, with reference to Figures 1 to 9(b), a stacked electronic component 100 according to one embodiment of the present invention and various embodiments thereof will be described in detail.

[0022] A stacked electronic component 100 according to one embodiment of the present invention includes a dielectric layer 111, a body 110 including internal electrodes 121 and 122 arranged alternately with the dielectric layer 111, external electrodes 130 and 140 disposed on the body 110 and connected to the internal electrodes 121 and 122, and interface layers 151 and 152 disposed between the body 110 and the external electrodes 130 and 140, wherein the interface layers 151 and 152 may include oxides containing a crystalline conductive metal.

[0023] Referring to Figure 1, the stacked electronic component 100 may include a main body 110 and external electrodes 130 and 140 placed on the main body 110.

[0024] Referring to Figure 2, the main body 110 may be configured in which the dielectric layer 111 and internal electrodes 121 and 122 are arranged alternately. Specifically, the main body 110 may be configured in which the first internal electrode 121 and the second internal electrode 122 are arranged alternately with the dielectric layer 111 in between.

[0025] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 is not a perfectly straight hexahedron, but can be substantially hexahedron-shaped.

[0026] Referring to Figure 1, the main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4 and facing each other in a third direction. In this case, the first direction can be defined as the direction in which the dielectric layer 111 and the internal electrodes 121 and 122 are arranged alternately.

[0027] The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated so as to be difficult to confirm without using a scanning electron microscope (SEM).

[0028] The raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, a strontium titanate-based material, or the like can be used. The barium titanate-based material can contain BaTiO3-based ceramic powder. Examples of the ceramic powder include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1), and the like.

[0029] In addition, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to the powder such as barium titanate (BaTiO3) as the raw material for forming the dielectric layer 111 according to the object of the present invention.

[0030] The average thickness td of the dielectric layer 111 is not particularly limited. When aiming at miniaturization and high capacitance of the multilayer electronic component 100, the average thickness td of the dielectric layer 111 may be 0.35 μm or less, and the average thickness td of the dielectric layer 111 may be 5 μm or more in order to improve the reliability of the multilayer electronic component 100 under high temperature and high voltage.

[0031] The average thickness td of the dielectric layer 111 can mean the average thickness of one or more dielectric layers among the plurality of dielectric layers.

[0032] For example, the average thickness td of the dielectric layer 111 may be the average of the thicknesses measured at the 1 / 4, 2 / 4, and 3 / 4 points, which divide the dielectric layer into four equal parts in the length direction, using as a reference one dielectric layer adjacent to the point where the center line in the length direction and the center line in the thickness direction of the capacitance forming portion intersect, from among the dielectric layers extracted from images of the dielectric layers scanned with a scanning electron microscope (SEM) from the central part in the third direction of the main body 110. If such measurements are extended to the two upper and two lower dielectric layers that are equally spaced with respect to the one dielectric layer adjacent to the point where the center line in the length direction and the center line in the thickness direction of the capacitance forming portion intersect, the average thickness of the dielectric layer can be further generalized.

[0033] Referring to Figures 2 and 3, the main body 110 can include a capacitance forming portion Ac, which is a region where the first internal electrode 121 and the second internal electrode 122 overlap in a first direction, and cover portions 112 and 113 formed on the upper and lower parts of the capacitance forming portion Ac in the first direction.

[0034] The cover portions 112 and 113 may include an upper cover portion 112 positioned on one side of the volume-forming portion Ac in the first direction, and a lower cover portion 113 positioned on the other side of the volume-forming portion Ac in the first direction.

[0035] Referring to Figure 8, the cover portions 112 and 113 can be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0036] The cover portions 112 and 113 do not contain internal electrodes and can contain the same material as the dielectric layer 111. That is, the cover portions 112 and 113 can contain ceramic materials, for example, barium titanate (BaTiO3) based ceramic materials.

[0037] On the other hand, the average thickness of the cover portions 112 and 113 is not particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component, the average thickness tc of the cover portions 112 and 113 may be 15 μm or less.

[0038] The average thickness of the cover portions 112 and 113 can represent the size in the first direction, and can be the average value of the sizes of the cover portions 112 and 113 in the first direction measured at five equally spaced points on the upper or lower part of the volume forming portion Ac.

[0039] Margin portions 114 and 115 can be arranged on one and the other surface of the capacity forming portion Ac in the first direction.

[0040] The margin portions 114 and 115 may include a margin portion 114 located on the fifth surface 5 of the main body 110 and a margin portion 115 located on the sixth surface 6. That is, the margin portions 114 and 115 may be regions that are in contact with both end surfaces of the main body 110 in the third direction (width direction).

[0041] As shown in Figure 3, the margin portions 114 and 115 can represent the regions between the interface between both ends of the first internal electrode 121 and the second internal electrode 122 and the body 110 in a cross-section obtained by cutting the body 110 in the first direction to the third direction (xz).

[0042] The margins 114 and 115 can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0043] The margin portions 114 and 115 may be formed by applying conductive paste to the ceramic green sheet, except for the areas where the margin portions are formed, to form internal electrodes.

[0044] Furthermore, in order to suppress the step caused by the internal electrodes 121 and 122, after cutting the laminated internal electrodes so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body, a single dielectric layer or two or more dielectric layers can be laminated on both sides of the capacitance forming portion Ac in the third direction (z direction) to form margin portions 114 and 115.

[0045] On the other hand, the width of the margin portions 114 and 115 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the margin portions 114 and 115 may be 15 μm or less.

[0046] The average width of the margin portions 114 and 115 can represent the average size of the margin portions 114 and 115 in the third direction, and can be the average value of the sizes of the margin portions 114 and 115 in the third direction measured at five equally spaced points on the side surface of the volume forming portion Ac.

[0047] The internal electrodes 121 and 122 may be arranged alternately with respect to the dielectric layer 111 in the first direction.

[0048] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be connected to the third surface 3 and the fourth surface 4 of the main body 110, respectively. Specifically, one end of the first internal electrode 121 can be connected to the third surface 3, and one end of the second internal electrode 122 can be connected to the fourth surface 4.

[0049] The first internal electrode 121 is separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 130 can be placed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 140 can be placed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0050] In other words, the first internal electrode 121 is not connected to the second external electrode 140 but is connected to the first external electrode 130, and the second internal electrode 122 is not connected to the first external electrode 130 but is connected to the second external electrode 140. Therefore, the first internal electrode 121 can be formed at a certain distance from the fourth surface 4, and the second internal electrode 122 can be formed at a certain distance from the third surface 3. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 placed in between.

[0051] The main body 110 can be formed by alternately stacking ceramic green sheets printed with the first internal electrode 121 and ceramic green sheets printed with the second internal electrode 122, and then firing them.

[0052] The materials used to form the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0053] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes, which includes internal electrodes containing one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, onto a ceramic green sheet. While screen printing or gravure printing can be used as printing methods for the conductive paste for internal electrodes, the present invention is not limited thereto.

[0054] The average thickness te of the internal electrodes is not particularly limited. When the purpose is to miniaturize and increase the capacitance of the multilayer electronic component 100, the average thickness te of the internal electrodes may be 0.35 μm or less, and when the purpose is to improve the reliability of the multilayer electronic component 100 under high temperature and high voltage conditions, the average thickness te of the internal electrodes may be 1 μm or more.

[0055] The average thickness te of the internal electrodes 121 and 122 can mean the average thickness of one or more internal electrodes among the multiple internal electrodes 121 and 122.

[0056] For example, the average thickness te of the internal electrodes 121 and 122 may be the average of the thicknesses measured at the 1 / 4, 2 / 4, and 3 / 4 points, which divide the internal electrodes into four equal parts in the length direction, using as a reference one layer of internal electrodes adjacent to the point where the center line in the length direction and the center line in the thickness direction of the capacitance forming section intersect, extracted from images of the internal electrodes

[0057] The external electrodes 130 and 140 may be arranged on the third surface 3 and fourth surface 4 of the main body 110. The external electrodes 130 and 140 may include a first external electrode 130 and a second external electrode 140, which are arranged on the third surface 3 and fourth surface 4 of the main body 110 and connected to a first internal electrode 121 and a second internal electrode 122, respectively.

[0058] In this embodiment, a structure in which the stacked electronic component 100 has two external electrodes 130 and 140 is described, but the number and shape of the external electrodes 130 and 140 can be changed depending on the form of the internal electrodes 121 and 122 and other purposes.

[0059] On the other hand, the external electrodes 130 and 140 may be formed using any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc., and may also have a multilayer structure.

[0060] For example, the external electrodes 130 and 140 may include electrode layers 131 and 141 placed on the main body 110, and plating layers 132, 133, 142, and 143 formed on the electrode layers 131 and 141.

[0061] As a more specific example for electrode layers 131 and 141, the electrode layers may be fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin.

[0062] Furthermore, the electrode layers 131 and 141 may be formed in a manner in which a fired electrode and a resin-based electrode are sequentially formed on the main body. Also, the electrode layers may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode.

[0063] While materials with excellent electrical conductivity can be used as the conductive metal in the electrode layer, they are not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and alloys thereof.

[0064] The plating layers 132, 133, 142, and 143 play a role in improving mounting characteristics. The types of plating layers 132, 133, 142, and 143 are not particularly limited and may be plating layers containing one or more of Ni, Sn, Pd, and their alloys, and may be formed in multiple layers.

[0065] As a more specific example for the plating layers 132, 133, 142, and 143, the plating layer may be a Ni plating layer or a Sn plating layer, and may be in a form in which a Ni plating layer and a Sn plating layer are formed sequentially on the electrode layer, or may be in a form in which a Sn plating layer, a Ni plating layer and a Sn plating layer are formed sequentially. Furthermore, the plating layer may include multiple Ni plating layers and / or multiple Sn plating layers.

[0066] The internal electrodes 121 and 122 and the dielectric layer 111 can potentially become heat sources during the operation of the multilayer electronic component. Specifically, heat may be generated due to the equivalent series resistance (ESR) of the multilayer electronic component, and heat may also be generated due to the loss coefficient (tanδ) of the dielectric layer 111.

[0067] If the heat generated inside such a multilayer electronic component 100 cannot be efficiently dissipated to the outside, it can not only cause damage to the multilayer electronic component itself, such as a decrease in reliability due to degradation of the dielectric layer 111, a decrease in capacitance per unit volume, and a shortened lifespan, but it can also degrade the performance of other components adjacent to the multilayer electronic component.

[0068] Due to differences in sintering shrinkage and material differences during the sintering process, pores or glass may be formed at the interface between the main body 110 and the external electrodes 130 and 140 of the multilayer electronic component 100. If pores or glass with low thermal conductivity are formed at the interface between the main body 110 and the external electrodes 130 and 140, the heat generated inside the main body 110 cannot be effectively transferred to and released from the external electrodes 130 and 140, which can reduce the heat dissipation performance of the multilayer electronic component 100.

[0069] Therefore, the stacked electronic component 100 according to one embodiment of the present invention includes interface layers 151 and 152 disposed between the main body 110 and the external electrodes 130 and 140, thereby improving the heat dissipation performance of the stacked electronic component 100 by effectively releasing the heat generated inside the main body 110 to the external electrodes 130 and 140 along the interface layers 151 and 152.

[0070] The interface layers 151 and 152 according to one embodiment of the present invention may contain an oxide containing a conductive metal, and the oxide containing the conductive metal contained in the interface layers 151 and 152 may have a crystalline structure.

[0071] During the sintering process of the multilayer electronic component 100, voids or amorphous glass may form at the interface between the main body 110 and the external electrodes 130 and 140. The low electrical conductivity of these voids or glass may reduce the heat dissipation performance of the multilayer electronic component 100. According to one embodiment of the present invention, since the interface layers 151 and 152 contain an oxide containing a crystalline conductive metal, superior electrical conductivity can be ensured compared to the case where amorphous glass is formed at the interface between the main body 110 and the external electrodes 130 and 140. This improves the heat dissipation characteristics of the multilayer electronic component 100.

[0072] Whether or not the oxide containing the conductive metal in the interface layers 151 and 152 is crystalline can be confirmed by whether or not a clear peak or diffraction pattern can be obtained by X-ray diffraction analysis (XRD) or electron diffraction pattern analysis (SAED, Selected Area Electron Diffraction), and various analytical techniques can be used.

[0073] Referring to Figure 5, in one embodiment, the interface layer 151 may be a composite layer comprising a first region R1 composed of an oxide containing a conductive metal and a second region R2 made of a conductive metal. The first region R1, composed of an oxide containing a conductive metal, can improve the bonding force between the main body 110 and the external electrodes 130 and 140, and the second region R2, composed of a conductive metal, can improve the heat dissipation efficiency. Therefore, as in one embodiment, when the interface layer 151 simultaneously comprises a first region R1 composed of an oxide containing a conductive metal and a second region R2 made of a conductive metal, it is possible to improve the bonding force between the main body 110 and the external electrodes 130 and 140 while simultaneously improving the heat dissipation efficiency.

[0074] On the other hand, an oxide containing a conductive metal included in the first region R1 may also be an oxide containing a conductive metal included in the second region R2.

[0075] The interface layers 151 and 152 may contain oxides that include conductive metals. However, if the oxygen content is excessive relative to the conductive metal content in the interface layers 151 and 152, the heat dissipation effect may decrease. Conversely, if the oxygen content is insufficient relative to the conductive metal content, the bonding strength between the main body 110 and the external electrodes 130 and 140 may decrease. Therefore, in one embodiment, by adjusting the ratio of the oxygen content to the conductive metal content in the interface layers 151 and 152 to 0.5 at% or more and 10 at% or less, it is possible to simultaneously obtain both a heat dissipation effect and an improved bonding strength between the main body 110 and the external electrodes 130 and 140.

[0076] The oxide containing a conductive metal included in the interface layers 151 and 152 may be an oxide containing a conductive metal with excellent thermal conductivity. Examples of conductive metals with excellent thermal conductivity include silver (Ag), aluminum (Al), and copper (Cu). In other words, in one embodiment, the conductive metal may include one or more of silver (Ag), aluminum (Al), and copper (Cu), and the oxide containing a conductive metal included in the interface layers 151 and 152 may be an oxide containing one or more of gold (Au), silver (Ag), and copper (Cu).

[0077] The method for confirming the composition of the interface layers 151 and 152 is not particularly limited. For example, in the cross-sections in the first and second directions, polished to the center of the third direction of the multilayer electronic component 100, a specific region of the interface between the main body 110 and the external electrodes 130 and 140 can be analyzed using SEM-EDX (Scanning Electron Microscope-Energy Dispersive X-ray Spectroscopy) to confirm the presence and concentration (at%) of conductive metal elements and oxygen elements.

[0078] On the other hand, the interface layers 151 and 152, whose components were analyzed by SEM-EDX, can be divided into regions with an oxygen concentration of less than 0.5 at% and regions with an oxygen concentration of 0.5 at% or more. The region with an oxygen concentration of less than 0.5 at% can be defined as a region composed substantially only of conductive metals, while the region with an oxygen concentration of 0.5 at% or more can be defined as a region composed substantially only of oxides containing conductive metals.

[0079] The interface layers 151 and 152 can be in contact with the third surface 3 or the fourth surface 4 of the main body 110. Specifically, the first interface layer 151 can be in contact with the third surface 3 of the main body 110, and the second interface layer 152 can be in contact with the fourth surface 4 of the main body 110. Since the third surface 3 of the main body 110 is the surface in contact with the first internal electrode 121, and the fourth surface 4 of the main body 110 is the surface in contact with the second internal electrode 122, the third surface 3 and the fourth surface 4 of the main body 110 can become the main heat dissipation pathways for heat generated inside the main body 110. According to one embodiment, since the interface layers 151 and 152 are arranged to be in contact with the third surface 3 or the fourth surface 4 of the main body 110, which are the main heat dissipation pathways for heat generated inside the main body 110, the heat dissipation characteristics of the stacked electronic component 100 can be further improved.

[0080] Since the interface layers 151 and 152 contain an oxide containing a conductive metal, when the interface layers 151 and 152 are in contact with the internal electrodes 121 and 122, the electrical connectivity between the internal electrodes 121 and 122 and the external electrodes 130 and 140 may decrease. Therefore, in one embodiment, by arranging the interface layers 151 and 152 at a distance from the internal electrodes 121 and 122, the phenomenon of decreased electrical connectivity between the internal electrodes 121 and 122 and the external electrodes 130 and 140 can be prevented.

[0081] During the sintering process that bonds the main body 110 and the external electrodes 130 and 140, voids or amorphous glass may form at the interface between the dielectric layer 111 of the main body 110 and the external electrodes 130 and 140. In this case, the heat released from the dielectric layer 111 to the external electrodes 130 and 140 can be absorbed by the voids or amorphous glass at the interface between the dielectric layer 111 and the external electrodes 130 and 140, which may reduce the heat dissipation efficiency of the multilayer electronic component 100. Therefore, in one embodiment, by arranging the interface layers 151 and 152 in contact with the dielectric layer 111, it is possible to prevent the formation of voids or amorphous glass at the interface between the dielectric layer 111 and the external electrodes 130 and 140, thereby further improving the heat dissipation characteristics of the multilayer electronic component 100.

[0082] In one embodiment, multiple interface layers 151 and 152 can be arranged on the third surface 3 or the fourth surface 4.

[0083] Specifically, referring to Figure 2, multiple first interface layers 151 can be arranged on the third surface 3, and multiple second interface layers 152 can be arranged on the fourth surface 4. In this case, the multiple first interface layers 151 may be spaced apart from each other in the first direction, which is the direction in which the dielectric layer 111 and the internal electrodes 121 and 122 are arranged alternately, and the second interface layers 152 may also be spaced apart from each other in the first direction. This makes it possible to create irregularities at the interface between the main body 110 and the external electrodes 130 and 140, thereby improving the mechanical strength of the bond between the main body 110 and the external electrodes 130 and 140.

[0084] Referring to Figure 4, in order to further improve the mechanical strength of the bond between the main body 110 and the external electrodes 130 and 140, it is preferable that the electrode layers 131 and 142, which constitute the external electrodes 130 and 140, are arranged in the space S separated by the multiple interface layers 151 and 152. That is, in one embodiment, a part of the external electrodes may be arranged in the space S separated by the multiple interface layers 151 and 152 in the first direction.

[0085] The formation length of the interface layers 151 and 152 can be adjusted considering the degree of heat dissipation effect and the formation thickness of the external electrodes 130 and 140. Specifically, the maximum length of the interface layers 151 and 152 may be between 0.10 μm and 7.00 μm.

[0086] Referring to Figure 4, the maximum length of the interface layer 151 can be represented by L1, which can mean the maximum length in the first direction measured at any interface layer in the cross-section of the first and second directions after polishing to the center of the third direction of the multilayer electronic component 100.

[0087] If the maximum length L1 of the interface layers 151 and 152 is less than 0.10 μm, the heat dissipation effect may be somewhat insufficient, and it may not be possible to prevent the formation of voids or glass at the interface between the main body 110 and the external electrodes 130 and 140. If the maximum length L1 of the interface layers 151 and 152 exceeds 7.00 μm, the space for forming the external electrodes containing conductive metal may be insufficient, resulting in a decrease in the heat dissipation effect.

[0088] Referring to Figure 6, in one embodiment, the ratio of copper (Cu) content to oxygen (O) content in the interface layers 151' and 152' may differ depending on the position.

[0089] Referring to Figure 7, the main body 110 according to one embodiment can be divided into a central portion CP located in the center, and an outer portion OP located above and below the central portion, when the x-direction, which is the direction in which the dielectric layer and internal electrodes are alternately arranged, is divided into three equal parts. In this case, the interface layer 151' may include a first interface layer 151a in contact with the central portion CP and a second interface layer 151b in contact with the outer portion OP.

[0090] On the other hand, the amount of heat generated inside the main body 110 can reach its maximum value in the central part CP, which has a high current density. Therefore, in order to significantly improve the heat dissipation characteristics of the stacked electronic component 100, it is necessary to efficiently release the heat generated in the central part CP.

[0091] Therefore, in one embodiment, when M1 is the ratio of the content of conductive metal elements (at%) to the content of oxygen (O) elements (at%) in the first interface layer 151a, and M2 is the ratio of the content of conductive metal elements (at%) to the content of oxygen (O) elements (at%) in the second interface layer 151b, the condition M1 > M2 can be satisfied. As a result, the heat generated intensively in the central part CP can be efficiently released along the first interface layer 151a, where the ratio of the content of conductive metal elements to the content of oxygen (O) elements is relatively high, and the second interface layer 151b, where the ratio of the content of conductive metal elements to the content of oxygen (O) elements is relatively low, is arranged in the outer part OP, thereby improving the bonding force between the main body 110 and the external electrodes 130 and 140.

[0092] In one embodiment, the ratio of M1 to M2 (M1 / M2) can be greater than 1, but more preferably it can be 2 or more, which further improves the heat dissipation effect and the effect of improving the bonding force between the main body 110 and the external electrodes 130 and 140 of the present invention.

[0093] On the other hand, there is no particular upper limit to the ratio of M1 to M2 (M1 / M2), and it may vary depending on the type of conductive metal and oxide containing the conductive metal. For example, M1 / M2 may be 4 or less.

[0094] The method for forming the interface layers 151 and 152 according to the present invention is not particularly limited. Referring to Figure 9(a), pattern sheets 211 and 212 may be placed on the third surface 3 and fourth surface 4 of the main body 110. The pattern sheets 211 and 212 may include the interface layers 151 and 152 and the side dielectric layers 161 and 162, and the interface layers 151 and 152 and the side dielectric layers 161 and 162 may be in the state of conductive paste and ceramic sheets before firing.

[0095] Referring to Figure 9(b), the side dielectric layers 161 and 162 of the pattern sheets 211 and 212 can be removed by a separate process, so that only the interface layers 151 and 152 can exist on the third surface 3 and fourth surface 4 of the main body 110. In this case, the method for removing the side dielectric layers 161 and 162 is not particularly limited. For example, the side dielectric layers 161 and 162 can be removed by chemical etching using an acidic solution, high-energy plasma, or physical etching using a laser. On the other hand, in order to remove the side dielectric layers 161 and 162 more efficiently, the etching area can be controlled via mask patterning, and such etching can also be applied when the pattern sheet is made of a conductive metal and no separate dielectric layer is formed.

[0096] Although not shown in the drawings, the third surface 3 and fourth surface 4 of the main body 110 can subsequently undergo processes to form external electrodes 130 and 140, and to fire the main body 110 and the external electrodes 130 and 140.

[0097] The composition of the interface layers 151 and 152 according to one embodiment of the present invention and various examples thereof can be adjusted by adjusting the composition of the conductive paste contained in the pattern sheets 211 and 212, or by adjusting the firing atmosphere of the main body 110 and the external electrodes 130 and 140. Furthermore, the structure or pattern of the interface layers 151 and 152 can be formed by adjusting the position or arrangement of the conductive paste located on the pattern sheets 211 and 212, or by adjusting the position or arrangement of the conductive paste located on the pattern sheets 211 and 212.

[0098] As described above, embodiments of the present invention have been explained in detail, but the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0099] Furthermore, the expression “one embodiment” as used in this disclosure does not mean that each embodiment is the same as another, but is provided to highlight and illustrate the unique and distinct features of each embodiment. However, the embodiments presented above do not preclude their realization in combination with the features of other embodiments. For example, even if a matter described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment unless there is a contradictory or contrary description of that matter in the other embodiment.

[0100] The terms used in this disclosure are used solely to illustrate one embodiment and are not intended to limit the disclosure. Where otherwise clearly the context indicates otherwise, singular expressions include plural expressions. [Explanation of symbols]

[0101] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 121, 122: Internal electrode 130, 140: External electrode 112, 113: Cover section 114, 115: Margin section 151, 152: Interface layer

Claims

1. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, An external electrode is placed on the main body and connected to the internal electrode, The interface layer is disposed between the main body and the external electrode, The aforementioned interface layer comprises an oxide containing a crystalline conductive metal, and is a multilayer electronic component.

2. The laminated electronic component according to claim 1, wherein the interface layer includes a first region composed of an oxide containing the conductive metal and a second region composed of the conductive metal.

3. The multilayer electronic component according to claim 1, wherein the ratio of the content of oxygen element to the content of conductive metal element contained in the interface layer is 0.5 at% or more and 10 at% or less.

4. The laminated electronic component according to claim 1, wherein the conductive metal comprises one or more of silver (Ag), aluminum (Al), and copper (Cu).

5. The internal electrode includes a first internal electrode and a second internal electrode. The external electrode includes a first external electrode connected to the first internal electrode, and a second external electrode positioned apart from the first external electrode and connected to the second internal electrode. The main body includes a first and second surface facing a first direction in which the dielectric layer and the internal electrodes are alternately arranged, a third and fourth surface facing a second direction in which the first external electrode and the second external electrode are separated, and a fifth and sixth surface facing a third direction perpendicular to the first and second directions. The laminated electronic component according to claim 1, wherein the interface layer is in contact with the third surface or the fourth surface.

6. The laminated electronic component according to claim 1, wherein the interface layer is arranged separately from the internal electrodes.

7. The laminated electronic component according to claim 1, wherein the interface layer is in contact with the dielectric layer.

8. Multiple interface layers are arranged, The stacked electronic component according to claim 1, wherein the plurality of interface layers are arranged apart from each other in a direction in which the dielectric layer and the internal electrode are alternately arranged.

9. The stacked electronic component according to claim 8, wherein a portion of the external electrodes is arranged in the space between the plurality of interface layers.

10. The stacked electronic component according to claim 1, wherein the maximum length of the interface layer is 0.10 μm or more and 7.00 μm or less.

11. When the main body is divided into three equal parts in a direction in which the dielectric layer and the internal electrodes are arranged alternately, the region located in the center of the main body is defined as the central part, and the regions located above and below the central part are defined as the outer casing, When M1 is the ratio of the content of conductive metal elements (at%) to the content of oxygen (O) elements (at%) in the interface layer in contact with the central portion, and M2 is the ratio of the content of conductive metal elements (at%) to the content of oxygen (O) elements (at%) in the interface layer in contact with the outer portion, A stacked electronic component according to any one of claims 1 to 10, satisfying M1 > M2.

12. The stacked electronic component according to claim 11, wherein M1 / M2 satisfies the condition of 2 or more and 4 or less.

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