Gas supply system, processing apparatus, gas supply method, and method for manufacturing a semiconductor device

Abstract

This technology provides a way to equalize the amount of gas supplied from each gas supply line to the processing chamber. [Solution] The system comprises an inlet valve through which gas flows in, a storage section through which gas is accumulated, and an outlet valve through which gas flows out of the storage section, and a plurality of gas supply lines connected to a processing chamber, and an adjustment unit provided in at least one of the plurality of gas supply lines, which can adjust the flow resistance of the gas supply lines and equalize the amount of gas supplied by each gas supply line to the processing chamber.

Description

Technical Field

[0001] The present disclosure relates to a gas supply system, a processing apparatus, a gas supply method, and a method of manufacturing a semiconductor device.

Background Art

[0002] As an example of a semiconductor manufacturing apparatus for manufacturing a semiconductor device, which is a type of processing apparatus, an apparatus for processing a plurality of substrates is disclosed (Patent Documents 1 and 2). Further, in Patent Documents 1 and 2, when supplying gas to a processing chamber through two systems of piping to process a substrate, it is described that the accumulation of gas in a tank provided for each piping and the discharge to the processing chamber are alternately repeated to process the substrate. However, it may be difficult to make the supply amounts of the gases supplied from each system to the processing chamber the same.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for making the supply amounts of the gases supplied from each gas supply line to the processing chamber coincide.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, an inlet-side valve through which gas flows in, a storage portion in which gas is accumulated through the inlet-side valve, and an outlet-side valve through which gas flows out from the storage portion, and a plurality of gas supply lines connected to a processing chamber, An adjustment unit provided in at least one of the plurality of gas supply lines, which is capable of adjusting the flow resistance of the gas supply line and equalizing the amount of gas supplied by each gas supply line to the processing chamber, A technology possessing this feature is provided. [Effects of the Invention]

[0006] According to this disclosure, the amount of gas supplied from each gas supply line to the processing room can be made consistent. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic diagram showing the general configuration of a substrate processing apparatus according to one embodiment of the present disclosure. [Figure 2] This is a schematic diagram of the controller of a substrate processing apparatus according to one embodiment of the present disclosure, and shows the controller's control system in block diagram form. [Figure 3] This is a time chart showing an example of the opening and closing timing of each valve in a substrate processing apparatus according to one embodiment of the present disclosure. [Figure 4A] This is a schematic diagram showing the ideal state of each gas supply line. [Figure 4B] This is a schematic diagram showing an example of the actual state of each gas supply line. [Figure 5] Figure 4B is a graph showing the gas supply amount when using each gas supply line. [Figure 6A] This is a schematic diagram showing the general configuration of a substrate processing apparatus using each gas supply line in the comparative example. [Figure 6B] This is a schematic diagram showing the general configuration of a substrate processing apparatus using each gas supply line in the embodiment. [Figure 6C] These graphs show the gas supply amounts when using the gas supply lines shown in Figures 6A and 6B. [Figure 7A] This is a schematic diagram showing a modified gas supply line. [Figure 7B] This is a schematic diagram showing a modified gas supply line. [Figure 7C]This is a schematic diagram showing the general configuration of a substrate processing apparatus using a modified gas supply line. [Figure 7D] This is a schematic diagram showing the general configuration of a substrate processing apparatus using a modified gas supply line. [Figure 8] This is a schematic diagram showing a modified gas supply line. [Modes for carrying out the invention]

[0008] [Nature of this disclosure] The aspects of this disclosure will be described below, primarily with reference to Figures 1 to 5. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0009] Figure 1 shows a schematic diagram of the general configuration of a substrate processing apparatus 1 as an apparatus according to one embodiment of the present disclosure.

[0010] In the processing chamber 2 into which the substrate 31 is carried and processed, two nozzles for discharging gas inside, that is, the first nozzle 56A and the second nozzle 56B are provided. Gas is supplied to the first nozzle 56A from a gas supply source 72A. Gas is supplied to the second nozzle 56B from a gas supply source 72B. The gas flow path from the gas supply source 72A to the first nozzle 56A is constituted by a first gas supply line (hereinafter abbreviated as "first supply line") 47A. Also, the gas flow path from the gas supply source 72B to the second nozzle 56B is constituted by a second gas supply line (hereinafter abbreviated as "second supply line") 47B. Note that the first supply line 47A and the second supply line 47B in the present embodiment are examples of a plurality of gas supply lines in the present disclosure. In the figure, the arrows marked with "A" and "B" respectively indicate the directions in which the gas flows in the first supply line 47A and the second supply line 47B. Note that the gas supply sources 72A and 72B may be a single supply source. Also, the gas supply sources 72A and 72B may each be a supply source of the same type of gas or a supply source of different types of gas. On the other hand, on the downstream side of the processing chamber 2, an exhaust duct 66 through which the processed gas is discharged is provided.

[0011] The processing chamber 2 may be configured as a reaction tube in a vertical furnace. In that case, a plurality of substrates 31 are arranged in multiple stages inside the processing chamber 2. The first nozzle 56A and the second nozzle 56B can inject gas from the side of the substrate 31 so as to form a gas flow parallel to the surface of each of the substrates 31 arranged in multiple stages. The first nozzle 56A and the second nozzle 56B may be configured to be plane-symmetric with respect to a certain plane perpendicular to the substrate 31 passing through the center of the substrate 31 as an example. The processing chamber 2 is decompressed to, for example, 100 Pa or less by a vacuum pump connected to the exhaust duct 66.

[0012] In the first supply line 47A, with the gas supply source 72A at the most upstream, in order from the most upstream to the most downstream towards the first nozzle 56A, a mass flow controller (hereinafter abbreviated as "MFC") 100A as a flow rate controller, an inlet valve 93A as the first introduction section, a first tank 95A (hereinafter abbreviated as "the first tank") as a storage section, and an outlet valve 97A as the first discharge section are provided in series. The first supply line 47A also includes a pipe 48A. The gas supply source 72A, MFC 100A, inlet valve 93A, first tank 95A, outlet valve 97A, and first nozzle 56A are connected by the pipe 48A. In the pipe 48A, a pressure sensor 94A is provided in the portion between the inlet valve 93A and the first tank 95A.

[0013] In the second supply line 47B, with the gas supply source 72B at the most upstream, in order from the most upstream to the most downstream towards the second nozzle 56B, MFC 100B, an inlet valve 93B as the second introduction section, a second tank 95B (hereinafter abbreviated as "the second tank") as a storage section, and an outlet valve 97B as the second discharge section are provided in series. A pressure sensor 94B is provided in the flow path between the inlet valve 93B and the second tank 95B. The second supply line 47B also includes a pipe 48B. The gas supply source 72B, MFC 100B, inlet valve 93B, second tank 95B, outlet valve 97B, and second nozzle 56B are connected by the pipe 48B. In the pipe 48B, a pressure sensor 94B is provided in the portion between the inlet valve 93B and the second tank 95B.

[0014] The first tank 95A and the second tank 95B have substantially equal volumes and store gas supplied from gas sources 72A and 72B by MFCs 100A and 100B, respectively. By releasing the gas in a shorter time than the storage time, a large flow rate pulsed supply is performed, and the surface of the substrate 31 is uniformly exposed to the gas. Such a gas supply method can be effective for performing film deposition on a substrate 31 that has patterns such as deep grooves with a width smaller than the mean free path of the gas, with good uniformity and step coverage. Furthermore, in such a gas supply method, it is preferable that the error is 1% or less of the standard flow rate or flow velocity per unit time (e.g., 1 minute or 1 second).

[0015] When the inlet valves 93A and 93B are opened, gas with a constant mass flow rate flows from the MFCs 100A and 100B into the first tank 95A and the second tank 95B, respectively. When gas accumulates in the first tank 95A and the second tank 95B, the pressure sensors 94A and 94B detect an increase in the flow path pressure. Upon detection of this pressure increase, the controller 41, described later, closes the inlet valves 93A and 93B, respectively, thereby stopping the flow of gas into the first tank 95A and the second tank 95B.

[0016] The outlet valve 97A is located in the first supply line 47A, which connects the gas supply source 72A to the first nozzle 56A that releases gas into the processing chamber 2, and controls the release of gas from the first nozzle 56A.

[0017] The outlet valve 97B is located in the second supply line 47B, which connects the gas supply source 72B to the second nozzle 56B that releases gas into the processing chamber 2, and controls the release of gas from the second nozzle 56B.

[0018] The gas supplied from gas sources 72A and 72B to the processing chamber 2 may be, for example, the same type of gas. As an example, the gas supplied to the processing chamber 2 is a gaseous gas (raw material gas) obtained by vaporizing or sublimating the raw material. Alternatively, it may be a mixed gas (mixed gas) of the raw material gas and an inert gas (carrier gas, etc.).

[0019] The gas accumulated in the first tank 95A is released to the processing chamber 2 through the first nozzle 56A via the first supply line 47A by opening the outlet valve 97A. Meanwhile, the gas accumulated in the second tank 95B is released to the processing chamber 2 through the second nozzle 56B via the second supply line 47B by opening the outlet valve 97B.

[0020] When the same gas is stored in the first tank 95A and the second tank 95B and supplied to the processing chamber 2 from their respective gas supply lines, the only way to match the flow rates between the gas supply lines is to match the volume between the inlet valve and the outlet valve, which requires all gas supply lines to have the same piping shape. Figure 4A shows an ideal piping shape where all gas supply lines have the same piping shape. However, in reality, the routing of the piping 48A and 48B of the gas supply lines from the gas supply sources 72A and 72B to the processing chamber 2 often results in different piping shapes for each gas supply line, as shown in Figure 4B. Therefore, the Discloser has found a technique that allows the amount of gas supplied over a certain period of time to be matched between the gas supply lines by adjusting the gas flow velocity or flow rate, even when the piping shapes of the gas supply lines are not the same, i.e., when the volume between the inlet valve and the outlet valve does not match, as shown in Figure 4B.

[0021] As shown in Figure 4B, in this embodiment, the volume from the inlet valve 93A to the outlet valve 97A in the first supply line 47A is different from the volume from the inlet valve 93B to the outlet valve 97B in the second supply line 47B. Therefore, an adjustment unit 60 is provided in at least one of the gas supply lines, the first supply line 47A and the second supply line 47B. The adjustment unit 60 is a piping component that has the function of adjusting the flow resistance in the gas supply line. Herein, "volume" of the gas supply line means the volume from the inlet valve to the outlet valve. Below, the volume of the first supply line 47A is shown as XA, and the volume of the second supply line 47B is shown as XB. Herein, "flow resistance" of the gas supply line means the flow resistance in the region between the storage unit and the outlet valve. Below, the flow resistance of the first supply line 47A is shown as YA, and the flow resistance of the second supply line 47B is shown as YB.

[0022] In this embodiment, the adjustment unit 60 ensures that the supply amounts of gas from the first supply line 47A and the second supply line 47B to the processing chamber 2 are equal. That is, the adjustment unit 60 is a piping component configured to ensure that the supply amounts of gas from the first supply line 47A and the second supply line 47B to the processing chamber 2 are equal for at least a certain period of time, by being installed in at least one of the gas supply lines among the first supply line 47A and the second supply line 47B. Here, "supply amount of gas" refers to the cumulative supply amount when supplying (also called releasing) gas to the processing chamber 2. Furthermore, as can be seen in Figure 5, the supply amounts of gas over a certain period of time are slightly different, making it difficult to achieve zero error in the supply amounts of gas supplied from the first supply line 47A and the second supply line 47B to the processing chamber 2. Therefore, "equal supply amounts" here refers to the case where the difference in the supply amounts of gas between each gas supply line over a certain period of time is less than ±10%, for example, within ±3%. Furthermore, it is preferable that the difference in gas supply volume between each gas supply line over a certain period of time be within ±1%, as described above.

[0023] Furthermore, if the volumes XA and XB of the respective gas supply lines are different, at least one of the following cases is included: the piping length from the inlet valve 93A to the first tank 95A in the first supply line 47A is different from the piping length from the inlet valve 93B to the second tank 95B in the second supply line 47B; the piping length from the first tank 95A to the outlet valve 97A is different from the piping length from the second tank 95B to the outlet valve 97B; or the volume of the first tank 95A is different from the volume of the second tank 95B.

[0024] In this embodiment, as shown in Figure 4B, an adjustment unit 60 is provided in the second supply line 47B. Specifically, the adjustment unit 60 is provided between the second tank 95B and the outlet valve 97B of the second supply line 47B.

[0025] The adjustment section 60 is a connecting pipe (a so-called joint) that connects the pipes constituting the second supply line 47B. Examples of connecting pipes include elbow pipes, bellows pipes, and reducer pipes. In this embodiment, elbow pipes are used as connecting pipes. In addition to elbow pipes, other types of pipes that bend at angles such as 45° or 180°, i.e., pipes whose direction can be changed, may also be used as connecting pipes.

[0026] In this embodiment, as an example, two adjustment units 60 are provided between the second tank 95B and the outlet valve 97B. The section between the second tank 95B and the outlet valve 97B of the second supply line 47B is composed of three pipes 48B1, 48B2, and 48B3 that make up the piping 48B. Pipe 48B1 connects the second tank 95B and the first adjustment unit 60. Pipe 48B2 connects the first adjustment unit 60 and the second adjustment unit 60. Pipe 48B3 connects the second adjustment unit 60 and the outlet valve 97B.

[0027] Here, the relationship between the volumes XA and XB shown in Figure 4B and the flow resistance, and the matching of the gas supply amount over a certain period of time, will be explained using Figure 5. The example shown in Figure 4B will be described as an embodiment, and an example in which the adjustment unit 60 is removed from the example shown in Figure 4B will be described as a comparative example. In the comparative example, the flow resistance of each gas supply line is almost the same, and the volumes XA and XB are in the relationship first supply line 47A < second supply line 47B, so the gas supply amount is greater in the second supply line 47B than in the first supply line 47A. For this reason, in the embodiment, the adjustment unit 60 is provided in the second supply line 47B to adjust (increase) the flow resistance of the second supply line 47B. Figure 5 shows the gas supply amounts in the first supply line 47A and the second supply line 47B. In this embodiment, the flow resistance is adjusted by the adjustment unit 60 so that the first supply line 47A < second supply line 47B, depending on the relationship between volumes XA and XB such that volumes XA and XB are less than volumes XA and XB. It can be seen that by increasing the flow resistance of the second supply line 47B, the gas supply amount is matched over a certain period of time. In other words, by designing the system to adjust the flow resistance between tanks 95A and 95B and outlet valves 97A and 97B according to the difference between volumes XA and XB, even if there is a volume difference between the gas supply lines, the gas supply amount can be matched over a certain period of time by creating a difference in the gas supply rate through flow resistance. If volumes XA and XB are greater than volumes XA and XB such that volumes XA and XB are greater than volumes XA and XB, the flow resistance of the first supply line 47A can be increased by providing the adjustment unit 60 in the first supply line 47A.

[0028] Therefore, in the actual routing of piping from the gas supply source to the processing chamber 2, the volumes of each gas supply line will not be the same, and the volume of one of them will be larger than the other. In this case, by using the adjustment unit 60, the gas supply amount of each gas supply line can be made equal within a predetermined time.

[0029] Furthermore, the substrate processing device 1 has a controller 41 that controls the operation of each part. A schematic of the controller 41 is shown in Figure 2. The controller 41, as a processing unit (processing means), is configured as a computer equipped with a CPU (Central Processing Unit) 41a, RAM (Random Access Memory) 41B, storage device 41c, and I / O port 41d. The RAM 41B, storage device 41c, and I / O port 41d are configured to exchange data with the CPU 41a via an internal bus 41e. The controller 41 is configured to be connectable to input / output devices 411, such as a touch panel, and an external storage device 412.

[0030] The storage device 41c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 41c contains, in a readable format, control programs that control the operation of the board processing device 1, process recipes that describe the procedures and conditions for board processing, and correction recipes. The RAM 41B is configured as a memory area (work area) where programs and data read by the CPU 41a are temporarily held.

[0031] The I / O port 41d is connected to the pressure sensors 94A and 94B and MFCs 100A and 100B mentioned above, as well as to the solenoid valves 92 that open and close the inlet valves 93A and 93B, respectively.

[0032] The controller 41 controls the inlet valve 93A and outlet valve 97A, and the inlet valve 93B and outlet valve 97B, so that the accumulation of gas in the first tank 95A and the second tank 95B and the release of gas from the first tank 95A and the second tank 95B are repeated alternately.

[0033] The controller 41 calculates the gas supply amount in the first supply line 47A based on the volume XA from the inlet valve 93A through the first tank 95A to the outlet valve 97A, and the flow resistance from the first tank 95A to the outlet valve 97A. The controller 41 also calculates the gas supply amount in the second supply line 47B based on the volume XB from the inlet valve 93B through the second tank 95B to the outlet valve 97B, and the flow resistance from the second tank 95B to the outlet valve 97B. The controller 41 can then predict the time at which the calculated gas supply amounts will match. Furthermore, the controller 41 can arbitrarily display information such as the gas supply amount in the first supply line 47A over a certain period of time, the gas supply amount in the second supply line 47B over a certain period of time, the difference between the respective gas supply amounts, the time at which the calculated gas supply amounts will match, and the prediction result (prediction result of whether the gas supply amounts match or not) on the display device. This makes it possible to adjust the time at which the gas supply amounts match between each gas supply line using the adjustment unit. For example, in the case shown in Figure 5, by further adding an adjustment unit to the second supply line 47B, it is possible to further increase the flow resistance and shorten the time it takes for the gas supply amounts of each gas supply line to match. In addition, the controller 41 can display on the display device that adjustment of the flow resistance by the adjustment unit 60 is unnecessary when the volumes XA and XB are the same between each gas supply line.

[0034] The controller 41 is not limited to being configured as a dedicated computer; it may also be configured as a general-purpose computer. For example, the controller 41 according to this embodiment can be configured by preparing an external storage device 412 (for example, a semiconductor memory such as a USB memory or memory card) that stores the above-mentioned program, and installing the program on a general-purpose computer using such an external storage device 412. The means for supplying the program to the computer is not limited to supplying it via the external storage device 412. For example, the program may be supplied without going through the external storage device 412 by using communication means such as the internet or a dedicated line. The storage device 41c and the external storage device 412 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the storage device 41c, only the external storage device 412, or both.

[0035] <Opening and closing timing of each valve> Next, the opening and closing timings of each valve in the substrate processing apparatus 1 of this embodiment will be explained with reference to the time chart in Figure 3. In Figure 3, "O" indicates the valve is open, "C" indicates the valve is closed, and "..." indicates any state.

[0036] First, at time T1, the inlet valves 93A and 93B are opened, and gas is stored in the first tanks 95A and 95B. Then, at time T2, the inlet valves 93A and 93B are closed, and the stored gas is maintained at a predetermined pressure. Then, at time T3, with both the first tank 95A and the second tank 95B filled with gas, the controller 41 opens the outlet valves 97A and 97B. The gas stored in the first tank 95A is released from the outlet valve 97A through the first supply line 47A to the processing chamber 2 via the first nozzle 56A. Simultaneously, the gas stored in the second tank 95B is released from the outlet valve 97B through the second supply line 47B to the processing chamber 2 via the second nozzle 56B. Note that the release of gas from the first nozzle 56A and the release of gas from the second nozzle 56B do not need to be simultaneous; an appropriate time difference may be provided (the same applies hereafter). The gas supply time to processing chamber 2 is, for example, less than one minute (a few seconds to tens of seconds, for example). Therefore, it is desirable to determine the adjustment unit so that the gas supply amount of each gas supply line matches within the gas supply time to processing chamber 2. Then, at time T4, outlet valves 97A and 97B are closed, and processing chamber 2 is exhausted. At this time, purge gas or other film-forming gas may be supplied from another supply system (not shown).

[0037] The controller 41 in the substrate processing apparatus 1 of this embodiment is configured to open the outlet valve 97A when a predetermined amount of gas has accumulated in the first tank 95A, and to open the outlet valve 97B when a predetermined amount of gas has accumulated in the second tank 95B.

[0038] By performing the series of operations from time T1 to time T4 one or more times, the substrate 31 is exposed to the gas, and substrate processing such as film deposition is achieved. Furthermore, the series of operations can be repeated multiple times while rotating the substrate 31.

[0039] <Variation> As shown in Figure 6A, when the volumes XA and XB are such that the first supply line 47A > the second supply line 47B, the gas supply amount of the first supply line 47A will be greater than that of the second supply line 47B. In this case, as shown in Figure 6B, an adjustment unit 60 is provided in the first supply line 147A. In the example in Figure 6B, a reducer pipe is used as the adjustment unit 60. Here, compared to the first supply line 47A in Figure 6A where the adjustment unit 60 is not provided, the first supply line 147A in Figure 6B where the adjustment unit 60 is provided matches the gas supply amount of the second supply line 47B within the target time (a certain period of time), as shown in Figure 6C. On the other hand, as shown in Figure 6C, the first supply line 47A and the second supply line 47B in Figure 6A where the adjustment unit 60 is not provided do not match the gas supply amount of the second supply line 47B within the target time. Therefore, if volumes XA and XB are different, the gas supply amount of each gas supply line can be made equal by providing an adjustment unit 60 in at least one of the multiple gas supply lines.

[0040] Figure 7A shows that the second supply line 247B is provided with four adjustment sections 60 (elbow piping). These adjustment sections 60 are connected by piping 48B1, 48B2, 48B3, 48B4, and 48B5. In this way, the second supply line 47B may be provided with three or more adjustment sections 60. By using multiple adjustment sections 60, it becomes possible to quickly match the gas supply amounts of the first supply line 47A and the second supply line 47B.

[0041] As shown in Figure 7B, the second supply line 347B may have two additional adjustment sections 60 (elbow piping) between the inlet valve 93B of the second supply line 47B and the second tank 95B. By using multiple adjustment sections 60 in this way, it becomes possible to quickly match the gas supply amounts of the first supply line 47A and the second supply line 47B.

[0042] In the modified example shown in Figure 6B, an adjustment section 60 (reducer piping) is provided in the first supply line 147A, but the disclosure is not limited to this configuration. As shown in Figure 7C, in the first supply line 247A, another adjustment section 60 (elbow piping) may be provided between the inlet valve 93A and the first tank 95A. By using adjustment sections 60 with such different structures, it becomes possible to quickly match the gas supply amounts of the first supply line 247A and the second supply line 47B.

[0043] In the modified example shown in Figure 6B, the first supply line 147A is provided with an adjustment section 60 (reducer piping). In addition, as shown in Figure 7D, the second supply line 447B may also be equipped with an adjustment section 60 (elbow piping). That is, each gas supply line may be provided with its own adjustment section 60.

[0044] Furthermore, for example, as shown in the second supply line 547B in Figure 8, the volume of the second tank 95B may be less than the volume of the first tank 95A. By making the volume of the second tank 95B less than that of the first tank 95A, the gas supply amount of each gas supply line can be made equal. In other words, by making the volume of the second tank 95B less than that of the first tank 95A, the second tank 95B functions as an adjustment unit 60. In this case, the outlet valves 97A and 97B may be, for example, constant-level valves that act as flow control valves. Also, in the example shown in Figure 8, in order to adjust the volume of the second tank 95B, the flow resistance can be adjusted without providing a separate adjustment unit between the second tank 95B and the outlet valve 97A, and the gas supply amount over a certain period of time can be made equal between each gas supply line.

[0045] Furthermore, the adjustment section 60 is not limited to elbow piping. A pipe with a smaller diameter than the pipe to which it is connected may be used as the adjustment section 60. Alternatively, a pipe with an orifice may be used as the adjustment section 60. By adjusting the diameter of such a small-diameter section (orifice), the flow path cross-sectional area can be adjusted. In other words, the orifice (small-diameter section) of the adjustment section 60 can be said to be the part that adjusts the flow path cross-sectional area.

[0046] In the embodiment described above, gas is supplied to the processing chamber 2 from two gas supply lines, the first supply line 47A and the second supply line 47B, but the present disclosure is not limited to this configuration. For example, gas may be supplied to the processing chamber 2 from three or more gas supply lines. In this case as well, similar to the embodiment described above, the amount of gas supplied over a certain period of time can be made equal among the gas supply lines by providing an adjustment unit 60 for each gas supply line and adjusting the flow resistance.

[0047] Substrate processing process> Next, a substrate processing method having a predetermined processing step, that is, a method for manufacturing a semiconductor device, which is carried out using the substrate processing apparatus 1 according to this embodiment, will be described. Here, the predetermined processing step is given as an example of a substrate processing step, which is one of the steps in the manufacturing process of a semiconductor device.

[0048] This substrate processing process is achieved by executing a process recipe that includes at least the steps of loading the substrate 31 into the processing chamber 2 and supplying gas to the processing chamber 2 from both the first supply line 47A and the second supply line 47B.

[0049] In carrying out the substrate processing process, the process recipe is loaded into a memory (not shown), and control instructions and operation instructions are given from the controller 41 to process controllers and transport controllers (not shown) as needed. The substrate processing process carried out in this manner includes at least a loading process, a film deposition process, and an unloading process.

[0050] (Carry-in process) The controller 41 causes a substrate transfer mechanism (not shown) to transport the substrates 31 to the processing chamber 2. The number of substrates 31 to be placed in the processing chamber 2 does not have to be one. For example, when a predetermined number of substrates 31 are loaded into a boat (not shown), the boat is raised by a boat elevator (not shown) and loaded into the processing chamber 2 (boat loading). Once the boat is fully loaded, the lower end of the furnace flange of the vertical furnace is hermetically sealed.

[0051] (Processing steps) Next, the processing chamber 2 is controlled to reach a predetermined temperature and pressure (processing pressure) according to instructions from the controller 41. The processing chamber 2 is heated by a heater (not shown) to reach a predetermined temperature according to instructions from a temperature control unit (not shown). Subsequently, the flow rate is adjusted or the pressure is regulated by an on-off valve with a pressure adjustment mechanism (not shown) to reach a predetermined temperature. Then, the rotation of the substrate 21 is started by a rotating mechanism (not shown). A predetermined gas (processing gas) is supplied to the substrate 21 located in the processing chamber 2 while maintaining a predetermined pressure and temperature, and a predetermined process (e.g., film deposition) is performed on the substrate 21. Note that the temperature may be lowered from the processing temperature (predetermined temperature) before the next unloading process.

[0052] In this embodiment, the predetermined gas (processing gas) for the film formation process is supplied by two gas supply lines, the first supply line 47A and the second supply line 47B. Specifically, the gas supplied from gas supply sources 72A and 72B to the processing chamber 2 via the first supply line 47A and the second supply line 47B is the same, and as an example, it is a gaseous gas (raw material gas) obtained by vaporizing or sublimating the raw material.

[0053] In this embodiment, the raw material gas for the film deposition process is supplied simultaneously for a certain period of time from two gas supply lines, the first supply line 47A and the second supply line 47B. Specifically, the raw material gas is supplied to the processing chamber 2 from the two gas supply lines, the first supply line 47A and the second supply line 47B, during the step time of the film deposition process step in the process recipe. In other words, the step time is set to a certain period of time as shown in Figure 5.

[0054] According to this implementation, the same raw material gas is supplied simultaneously for a certain period of time from two gas supply lines, the first supply line 47A and the second supply line 47B. This allows the cumulative supply amount of the raw material gas to be matched, thereby improving the in-plane uniformity of the film thickness.

[0055] Furthermore, this implementation allows for the supply of raw material gas from two gas supply lines, the first supply line 47A and the second supply line 47B, which enables greater film thickness compared to supplying raw material gas from a single supply line. In particular, for film deposition with a large target film thickness, the deposition time can be shortened.

[0056] Furthermore, according to this embodiment, the raw material gas stored in the first tank 95A is released from the outlet valve 97A through the first supply line 47A into the processing chamber 2 from the first nozzle 56A for a certain period of time, while the raw material gas stored in the second tank 95B is released from the outlet valve 97B through the second supply line 47B into the processing chamber 2 from the second nozzle 56B for a certain period of time. As a result, the raw material gas can flow evenly over the substrate 31 placed in the processing chamber 2, thereby improving the in-plane uniformity of the substrate 31. Moreover, since the raw material gases stored in the first tank 95A and the second tank 95B can be supplied to the processing chamber 2 at once, the step coverage of the high aspect ratio (3D NAND) longitudinal groove structure formed on the substrate 31 can be improved.

[0057] Then, once the film deposition process on the substrate 21 is complete, the controller 41 stops the rotation of the substrate 21 by the rotating mechanism, purges nitrogen into the processing chamber 2 (nitrogen purging process), and returns to atmospheric pressure.

[0058] (Export process) The controller 41 then proceeds to remove the processed substrates 21 from the processing chamber 2. The processed substrates 21 are effectively cooled, for example, by clean air blown from a clean unit (not shown). Once cooled to, for example, 150°C or below, the processed substrates 21 are transferred (wafer discharged) to a pod (not shown). If there is a next batch, new unprocessed substrates 21 are transferred to the boat as needed. .

[0059] According to this embodiment, one or more of the following effects can be obtained.

[0060] In this embodiment, since the flow resistance of at least one of the multiple gas supply lines is adjusted by the adjustment unit 60, the amount of gas supplied from each gas supply line to the processing chamber 2 can be made equal.

[0061] Furthermore, in this embodiment, even if there is a difference in volume between each gas supply line, the flow resistance is adjusted by the adjustment unit 60, so that the amount of gas supplied from each gas supply line to the processing chamber 2 can be made equal.

[0062] Furthermore, in this embodiment, even if a difference in volume occurs between each gas supply line due to the routing of piping to the processing chamber 2, the flow resistance can be adjusted by the adjustment unit 60 to equalize the amount of gas supplied from each gas supply line to the processing chamber 2.

[0063] Furthermore, in this embodiment, the supply amount of the same raw material gas (gas in which the raw material has been vaporized or sublimated) from each gas supply line can be made equal between each gas supply line over a certain period of time, thereby making the thickness of the film formed on the substrate 31 located in the processing chamber 2 uniform.

[0064] Furthermore, in this embodiment, the supply amount of each gas supply line can be cumulatively calculated using the step time of the process recipe, making it possible to predict the time when the gas supply amounts between each gas supply line match. This allows for adjustment of the time when the gas supply amounts match.

[0065] Furthermore, according to this embodiment, the raw material gas stored in the first tank 95A is released from the outlet valve 97A through the first supply line 47A into the processing chamber 2 from the first nozzle 56A for a certain period of time, while the raw material gas stored in the second tank 95B is released from the outlet valve 97B through the second supply line 47B into the processing chamber 2 from the second nozzle 56B for a certain period of time. As a result, the raw material gas can flow evenly over the substrate 31 placed in the processing chamber 2, thereby improving the in-plane uniformity of the substrate 31. In addition, step coverage to the longitudinal groove structure of high aspect ratio (3D NAND) can be improved.

[0066] Although embodiments of this disclosure have been specifically described above, this disclosure is not limited to the embodiments described above, and various modifications are possible without departing from its essence. For example, the processing apparatus of this embodiment can be applied not only to semiconductor manufacturing equipment but also to equipment that processes glass substrates, such as LCD equipment. Furthermore, the film formation process includes, for example, processes for forming CVD, PVD, oxide films, nitride films, or both, and processes for forming films containing metals. In addition, processes such as annealing, oxidation, nitriding, and diffusion may also be used.

[0067] Although the above-described embodiments do not limit the specific manner of substrate processing, this disclosure can be suitably applied not only when processing substrates using a batch-type substrate processing apparatus that processes multiple substrates at once, but also when processing single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, it can be suitably applied when processing substrates using a substrate processing apparatus having a hot-wall type processing furnace, as well as when processing substrates using a substrate processing apparatus having a cold-wall type processing furnace.

[0068] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and processing conditions as described in the above-described embodiments and modifications, and the same effects as described in the above-described embodiments and modifications can be obtained.

[0069] The embodiments and modifications described above can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the embodiments and modifications described above. [Explanation of Symbols]

[0070] 2... Processing chamber, 93A, 93B... Inlet valves, 95A... First tank (storage section), 95B... Second tank (storage section), 97A, 97B... Outlet valves, 47A... First gas supply line (gas supply line), 47B... Second gas supply line (gas supply line), 60... Adjustment section.

Claims

1. It comprises an inlet valve through which gas flows in, a storage section through which gas is accumulated, and an outlet valve through which gas flows out of the storage section, and a plurality of gas supply lines connected to a processing chamber, An adjustment unit provided in at least one of the plurality of gas supply lines, which is capable of adjusting the flow resistance of the gas supply line and equalizing the amount of gas supplied by each gas supply line to the processing chamber, A gas supply system having

2. The gas supply system according to claim 1, wherein the adjustment unit is a connecting pipe that connects the pipes constituting the gas supply line.

3. The gas supply system according to claim 1, wherein the adjustment section includes at least one of elbow piping, bellows piping, and reducer piping.

4. The gas supply system according to claim 2, wherein the adjustment section comprises a small-diameter portion smaller than the diameter of the pipe to which it is connected.

5. The gas supply system according to claim 4, wherein the small-diameter portion is an orifice.

6. The gas supply system according to claim 2, wherein the adjustment unit includes a portion for adjusting the cross-sectional area of ​​the flow path.

7. The gas supply system according to claim 1, wherein, when the volume from the inlet valve through the storage unit to the outlet valve differs between each of the gas supply lines, the gas supply amount of each of the gas supply lines is made equal by adjusting the flow resistance of the gas supply lines by the adjustment unit.

8. The gas supply system according to claim 7, wherein if the volumes between each of the gas supply lines are different, at least one of the following is included: the length of the piping connecting the inlet valve to the storage unit is different; the length of the piping connecting the storage unit to the outlet valve is different; or the volume of the storage unit is different.

9. The gas supply system according to claim 7, wherein the adjustment unit is provided between the storage unit and the outlet valve.

10. The gas supply system according to claim 8, wherein if the volume from the inlet valve through the storage unit to the outlet valve is the same between each of the gas supply lines, the adjustment of the flow resistance by the adjustment unit is omitted.

11. The gas supply system according to claim 1, wherein two or more adjustment units are provided between the inlet valve and the outlet valve via the storage unit.

12. The gas supply system according to claim 11, wherein the adjustment unit is provided in each of the gas supply lines.

13. The gas supply system according to claim 1, wherein the adjustment unit includes the storage unit.

14. The gas supply system according to claim 11, wherein the outlet valve is a constant water level valve.

15. The gas supply system according to claim 1, comprising three or more of the aforementioned gas supply lines.

16. The gas supplied to the processing chamber from the plurality of gas supply lines is of the same type, The gas supply system according to claim 1, wherein the gas is a gaseous gas obtained by vaporizing or sublimating a raw material.

17. Further equipped with a processing unit, The gas supply system according to claim 1, wherein the processing unit is configured to calculate the amount of gas supplied to each of the gas supply lines based on the volume from the inlet valve through the storage unit to the outlet valve and the flow resistance from the storage unit to the outlet valve.

18. It comprises an inlet valve through which gas flows in, a storage section through which gas is accumulated, and an outlet valve through which gas flows out of the storage section, and a plurality of gas supply lines connected to a processing chamber, An adjustment unit provided in at least one of the plurality of gas supply lines, which is capable of adjusting the flow resistance of the gas supply line and equalizing the amount of gas supplied by each gas supply line to the processing chamber, A processing apparatus equipped with a gas supply system having

19. It comprises an inlet valve through which gas flows in, a storage section through which gas is accumulated, and an outlet valve through which gas flows out of the storage section, and a plurality of gas supply lines connected to a processing chamber, An adjustment unit provided in at least one of the plurality of gas supply lines, which is capable of adjusting the flow resistance of the gas supply line and equalizing the amount of gas supplied by each gas supply line to the processing chamber, A gas supply method for supplying the gas by a gas supply system having the following:

20. A method for manufacturing a semiconductor device, comprising the step of supplying the gas according to the gas supply method described in claim 19 to process an object to be processed.

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