resin composition

Abstract

The present invention provides a novel resin composition that yields a cured product with low dielectric loss tangent, low surface roughness after desmearing, high adhesion (peel strength) to the plated conductor layer, and the ability to suppress crack formation after desmearing. [Solution] A resin composition comprising (A) a compound represented by formula (A-1), (B) a maleimide compound, and (C) an inorganic filler. TIFF2026137409000033.tif29170 (In formula (A-1), X A Each of these independently represents a 1- to 3-valent hydrocarbon group which may have substituents, and Y A Each independently represents a monovalent group containing a double bond which may have substituents, and each independently represents a divalent aromatic hydrocarbon group having two alkyl groups which may be the same or different as substituents, and Z A Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents, where n is an integer from 1 to 3 and m is an integer from 1 to 100.

Description

[Technical Field]

[0001] This invention relates to resin compositions, and more particularly to resin sheets, circuit boards, and semiconductor devices. [Background technology]

[0002] Insulating materials for circuit boards, such as printed circuit boards and redistribution boards for semiconductor chip packages, are required to exhibit good dielectric properties (low dielectric constant, low dielectric loss tangent) in order to suppress transmission loss when operating in high-frequency environments.

[0003] As an insulating material that provides good dielectric properties, for example, a resin composition containing a specific vinyl group-containing resin has been proposed (Patent Document 1). [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] International Publication No. 2023 / 008079 [Overview of the project] [Problems that the invention aims to solve]

[0005] In recent years, with the increasing sophistication of circuit boards, insulating materials are required to have further improvements in dielectric properties, such as further reduction of dielectric loss tangent. Furthermore, they are also required to have good surface smoothness (low surface roughness) after desmearing and good adhesion to the plated conductor layer.

[0006] In this regard, when using conventional resin compositions that contribute to good dielectric properties, the resulting insulating material tended to exhibit high surface roughness after desmearing and poor adhesion to the plated conductor layer. Furthermore, when using conventional resin compositions that contribute to good dielectric properties, cracks tended to occur easily after desmearing.

[0007] The object of the present invention is to provide a novel resin composition that yields a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion (peel strength) to the plated conductor layer, and the ability to suppress the occurrence of cracks after desmear treatment. [Means for solving the problem]

[0008] As a result of diligent research, the inventors of the present invention have found that the above problems can be solved by a resin composition having the following structure, and have completed the present invention.

[0009] In other words, the present invention includes the following: <1> (A) Compound represented by formula (A-1), (B) Maleimide compounds, and (C) Inorganic filler A resin composition containing the following: [ka] (In formula (A-1), X A m m X A This represents an n-valence group formed by the bonding of these elements. X A Each of these independently represents a 1- to 3-valent hydrocarbon group which may have substituents. Y A Each of these independently represents a monovalent group containing a double bond which may have substituents, Each Ar independently represents a divalent aromatic hydrocarbon group having two alkyl groups as substituents, which may be the same or different. Z A Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. n represents an integer between 1 and 3. m represents an integer between 1 and 100. <2> When the resin component in the resin composition is considered as 100% by mass, the total content of component (A) and component (B) is 50% by mass or more. <1> The resin composition described above. <3> Y A The resin composition according to <1> or <2>, wherein Y represents an acryloyl group, a methacryloyl group, or a vinylbenzyl group. <4> The resin composition according to any one of <1> to <3>, wherein the compound represented by formula (A-1) contains the compound represented by formula (A-2).

Chemical formula

Chemical formula

Advantages of the Invention

[0010] According to the present invention, there can be provided a novel resin composition that gives a cured product having a low dielectric loss tangent, exhibiting a low surface roughness after desmear treatment, having high adhesion (peel strength) to a plated conductor layer, and suppressing the generation of cracks after desmear treatment.

Embodiments for Carrying Out the Invention

[0011] <Explanation of Terms> In this specification, the term "organic group" refers to a group containing at least a carbon atom as a skeletal atom, and may be linear, branched or cyclic. In this specification, the number of skeletal atoms of the organic group is preferably 1 to 200, more preferably 1 to 150, still more preferably 1 to 100 or 1 to 50, unless otherwise specified. Examples of the organic group include a group composed of one or more skeletal atoms selected from a carbon atom, an oxygen atom, a nitrogen atom, and a sulfur atom (provided that it contains at least a carbon atom). <(

[0012] In this specification, "C[[ID=],

[19] ] p ~C q " (where p and q are positive integers and p < q) represents that the number of carbon atoms of the organic group described immediately after this term is p to q. For example, "C1~C 18 alkyl group" represents an alkyl group having 1 to 18 carbon atoms, and "C1~C6 alkylene group" represents an alkylene group having 1 to 6 carbon atoms.

[0013] In this specification, the term "aliphatic group" refers to a group obtained by removing one or more hydrogen atoms from an aliphatic compound. More specifically, an n-valent aliphatic group (where n is an integer of 1 or more) refers to a group obtained by removing n hydrogen atoms from an aliphatic compound. Here, the aliphatic compound may be a heteroatom-free aliphatic compound composed only of carbon atoms and hydrogen atoms, or it may be a heteroatom-containing aliphatic compound composed of carbon atoms, hydrogen atoms, and heteroatoms. In this specification, the term "heteroatom" refers to an atom other than carbon atoms and hydrogen atoms, such as oxygen atoms, nitrogen atoms, sulfur atoms, silicon atoms, halogen atoms, etc.

[0014] In this specification, the term "aliphatic hydrocarbon group" refers to a group obtained by removing one or more hydrogen atoms from a heteroatom-free aliphatic compound composed only of carbon atoms and hydrogen atoms. More specifically, an n-valent aliphatic hydrocarbon group (where n is an integer of 1 or more) refers to a group obtained by removing n hydrogen atoms from a heteroatom-free aliphatic compound. Examples of monovalent aliphatic hydrocarbon groups include optionally substituted alkyl groups, optionally substituted cycloalkyl groups, optionally substituted alkenyl groups, optionally substituted cycloalkenyl groups, and optionally substituted alkapolienyl groups (preferably 2 to 10, more preferably 2 to 6, even more preferably 2 to 4, and even more preferably 2). Examples of divalent aliphatic hydrocarbon groups include optionally substituted alkylene groups, optionally substituted cycloalkylene groups, optionally substituted alkenylene groups, optionally substituted cycloalkenylene groups, and optionally substituted alkapolienylene groups (preferably 2 to 10, more preferably 2 to 6, even more preferably 2 to 4, and even more preferably 2). Examples of trivalent aliphatic hydrocarbon groups include optionally substituted alkanetriyl groups, optionally substituted cycloacantriyl groups, optionally substituted alkenetriyl groups, optionally substituted cycloalkenetriyl groups, and optionally substituted alkapolitriyl groups (preferably 2 to 10, more preferably 2 to 6, even more preferably 2 to 4, and even more preferably 2 double bonds). Here, alkyl groups, alkenyl groups, alkapolienyl groups, alkylene groups, alkenylene groups, and alkapolienylene groups may be linear or branched. In this specification, unless otherwise specified, the number of carbon atoms in an aliphatic hydrocarbon group is preferably 1 or more, more preferably 2 or more or 3 or more, preferably 100 or less, more preferably 80 or less, and even more preferably 60 or less, 50 or less, or 40 or less. The number of carbon atoms in substituents is not included in this number of carbon atoms.

[0015] In this specification, the term "aromatic group" means a group obtained by removing one or more hydrogen atoms from an aromatic compound. More specifically, an n-valent aromatic group (where n is an integer of 1 or more) means a group obtained by removing n hydrogen atoms from an aromatic compound. Here, the aromatic compound may be a heteroatom-free aromatic compound composed only of carbon atoms and hydrogen atoms, or it may be a heteroatom-containing aromatic compound composed of carbon atoms, hydrogen atoms, and heteroatoms. In this specification, the term "aromatic compound" means a compound containing an aromatic ring. In this specification, the term "aromatic ring" means a ring that obeys Hückel's rule, where the number of electrons in the π-electron system on the ring is 4p+2 (where p is a natural number), and includes monocyclic aromatic rings and fused polycyclic aromatic rings formed by the fusion of two or more monocyclic aromatic rings. The aromatic ring may be an aromatic carbocyclic ring having only carbon atoms as ring constituent atoms, or an aromatic heterocyclic ring having heteroatoms such as oxygen atoms, nitrogen atoms, and sulfur atoms in addition to carbon atoms as ring constituent atoms. In this specification, unless otherwise specified, the number of carbon atoms in the aromatic ring is preferably 3 or more, more preferably 4 or more or 5 or more, and even more preferably 6 or more, with an upper limit of preferably 24 or less, more preferably 18 or less or 14 or less, and even more preferably 10 or less. The number of carbon atoms in substituents is not included in this number of carbon atoms.

[0016] In this specification, the term "aromatic hydrocarbon group" means a group obtained by removing one or more hydrogen atoms from a heteroatom-free aromatic compound composed only of carbon atoms and hydrogen atoms. More specifically, an n-valent aromatic hydrocarbon group (where n is an integer of 1 or more) means a group obtained by removing n hydrogen atoms from a heteroatom-free aromatic compound. Examples of monovalent aromatic hydrocarbon groups include optionally substituted aryl groups, and examples of divalent aromatic hydrocarbon groups include optionally substituted arylene groups. Examples of trivalent aromatic hydrocarbon groups include optionally substituted aryltriyl groups. In this specification, unless otherwise specified, the number of carbon atoms in an aromatic hydrocarbon group is preferably 6 or more, preferably 100 or less, more preferably 80 or less, and even more preferably 60 or less, 50 or less, or 40 or less. The number of carbon atoms in substituents is not included in this number.

[0017] In this specification, the term "ethylenic double bond" refers to a carbon-carbon double bond, and the term "ethylenic double bond-containing group" refers to a group that contains an ethylenic double bond. Here, the carbon atoms constituting the ethylenic double bond are not the carbon atoms constituting the aromatic ring. That is, an aromatic ring may contain a carbon-carbon double bond, but the carbon-carbon double bond constituting the aromatic ring does not qualify as an ethylenic double bond.

[0018] In this specification, the term “may have substituents” with respect to a compound or group means both cases where the hydrogen atoms of the compound or group are not substituted with substituents, and cases where some or all of the hydrogen atoms of the compound or group are substituted with substituents.

[0019] In this specification, unless otherwise specified, the term "substituent" means halogen atoms, alkyl groups, alkenyl groups, alkynyl groups, alkapolenyl groups, cycloalkyl groups, cycloalkenyl groups, alkoxy groups, alkenyloxy groups, cycloalkyloxy groups, cycloalkenyloxy groups, alkylthio groups, cycloalkylthio groups, aryl groups, aryloxy groups, arylthio groups, arylalkyl groups, arylalkoxy groups, monovalent aliphatic heterocyclic groups, alkylidene groups, acyl groups, acyloxy groups, amino groups, silyl groups, carboxyl groups, sulfo groups, cyano groups, aldehyde groups, nitro groups, mercapto groups, and oxo groups.

[0020] Examples of halogen atoms used as substituents include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms. The alkyl group used as a substituent may be linear or branched. The number of carbon atoms in the alkyl group is preferably 1 to 30, more preferably 1 to 20, even more preferably 1 to 12, 1 to 6, or 1 to 3. The alkenyl group or alkynyl group used as a substituent may be linear or branched. The number of carbon atoms in the alkenyl group or alkynyl group is preferably 2 to 30, more preferably 2 to 20, even more preferably 2 to 12, 2 to 6, or 2 to 3. The alkapolienyl group used as a substituent may be linear or branched, and the number of double bonds is preferably 2 to 10, more preferably 2 to 6, even more preferably 2 to 4, and even more preferably 2. The number of carbon atoms in the alkapolienyl group is preferably 3 to 30, more preferably 3 to 20, even more preferably 3 to 14, 3 to 12, or 3 to 6. The number of carbon atoms in the cycloalkyl group or cycloalkenyl group used as a substituent is preferably 3 to 12, more preferably 3 to 6. The alkoxy group used as a substituent may be linear or branched. The number of carbon atoms in the alkoxy group is preferably 1 to 12, more preferably 1 to 6. The alkenyloxy group used as a substituent may be linear or branched. The number of carbon atoms in the alkenyloxy group is preferably 2 to 12, more preferably 2 to 6, and even more preferably 2 or 3. The number of carbon atoms in the cycloalkyloxy group or cycloalkenyloxy group used as a substituent is preferably 3 to 12, more preferably 3 to 6. The alkylthio group used as a substituent may be linear or branched. The number of carbon atoms in the alkylthio group is preferably 1 to 12, more preferably 1 to 6. The number of carbon atoms in the cycloalkylthio group used as a substituent is preferably 3 to 12, more preferably 3 to 6. The number of carbon atoms in the aryl group used as a substituent is preferably 6 to 14, more preferably 6 to 10. The number of carbon atoms in the aryloxy group used as a substituent is preferably 6 to 14, more preferably 6 to 10.The number of carbon atoms in the arylthio group used as a substituent is preferably 6 to 14, more preferably 6 to 10. The number of carbon atoms in the arylalkyl group used as a substituent is preferably 7 to 15, more preferably 7 to 11. The number of carbon atoms in the arylalkoxy group used as a substituent is preferably 7 to 15, more preferably 7 to 11. A monovalent aliphatic heterocyclic group used as a substituent refers to a group obtained by removing one hydrogen atom from an aliphatic heterocyclic compound. The number of carbon atoms in the monovalent aliphatic heterocyclic group is preferably 3 to 15, more preferably 3 to 9. An alkylidene group used as a substituent refers to a group obtained by removing two hydrogen atoms from the same carbon atom of an alkane. The number of carbon atoms in the alkylidene group is preferably 1 to 12, more preferably 1 to 6, and particularly preferably 1 to 3. The acyl group used as a substituent has the formula: -C(=O)-R. S The base represented by (wherein R S R refers to an alkyl group. S The alkyl group represented by may be linear or branched. The number of carbon atoms in the acyl group is preferably 2 to 13, more preferably 2 to 7. The acyloxy group used as a substituent is of the formula: -OC(=O)-R S The base represented by (wherein R S (This is the same as above.) The number of carbon atoms in the acyloxy group is preferably 2 to 13, more preferably 2 to 7. The above substituent may have further substituents (sometimes referred to as "secondary substituents"). Unless otherwise specified, the same substituents as above may be used as secondary substituents.

[0021] In this specification, the term "non-volatile component" refers to the components of the resin composition other than the organic solvents described later. Furthermore, the term "resin component" refers to the non-volatile components of the resin composition other than the inorganic fillers described later.

[0022] The present invention will be described in detail below with reference to embodiments and examples. However, the present invention is not limited to the embodiments and examples described below, and may be implemented with modifications as appropriate without departing from the scope of the claims and equivalents of the present invention.

[0023] [Resin composition] The resin composition of the present invention is characterized by comprising (A) a compound represented by formula (A-1), (B) a maleimide compound, and (C) an inorganic filler.

[0024] [ka] (In formula (A-1), X A m m X A This represents an n-valence group formed by the bonding of these elements. X A Each of these independently represents a 1- to 3-valent hydrocarbon group which may have substituents. Y A Each of these independently represents a monovalent group containing a double bond which may have substituents, Each Ar independently represents a divalent aromatic hydrocarbon group having two alkyl groups as substituents, which may be the same or different. Z A Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. n represents an integer between 1 and 3. m represents an integer between 1 and 100.

[0025] As mentioned above, when using conventional resin compositions that contribute to good dielectric properties to form insulating materials, the resulting insulating materials tended to exhibit high surface roughness after desmearing and poor adhesion to the plated conductor layer. Furthermore, when using conventional resin compositions that contribute to good dielectric properties, cracks tended to occur easily after desmearing.

[0026] In contrast, the resin composition of the present invention, which uses a combination of components (A) to (C), provides a cured product that has a low dielectric loss tangent, exhibits low surface roughness after desmear treatment, has high adhesion (peel strength) to the plated conductor layer, and suppresses the occurrence of cracks after desmear treatment.

[0027] The following describes each component.

[0028] <(A) Compound represented by formula (A-1)> The resin composition of the present invention contains a compound represented by formula (A-1) as component (A). Component (A) may be used alone or in combination of two or more types.

[0029] [ka]

[0030] (In formula (A-1), X A m m X A This represents an n-valence group formed by the bonding of these elements. X A Each of these independently represents a 1- to 3-valent hydrocarbon group which may have substituents. Y A Each of these independently represents a monovalent group containing a double bond which may have substituents, Each Ar independently represents a divalent aromatic hydrocarbon group having two alkyl groups as substituents, which may be the same or different. Z A Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. n represents an integer between 1 and 3. m represents an integer between 1 and 100.

[0031] n represents an integer between 1 and 3, preferably 2 or 3, and more preferably 2.

[0032] X AEach of these independently represents a substituted 1- to 3-valent hydrocarbon group, specifically a monovalent hydrocarbon group, a divalent hydrocarbon group, or a trivalent hydrocarbon group.

[0033] X A The number of carbon atoms in the 1- to 3-valent hydrocarbon group is preferably 2 or more, more preferably 5 or more, even more preferably 10 or more, preferably 50 or less, more preferably 40 or less, even more preferably 30 or less, or 20 or less. The number of carbon atoms of substituents is not included in this number of carbon atoms.

[0034] X A The hydrocarbon group in this can be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

[0035] X A The aliphatic hydrocarbon group in this compound may be linear, branched, or cyclic. Examples of aliphatic hydrocarbon groups include monovalent aliphatic hydrocarbon groups such as alkyl groups and alkenyl groups; divalent aliphatic hydrocarbon groups such as alkylene groups and alkenylene groups; and trivalent aliphatic hydrocarbon groups such as alkanetriyl groups and alkenetriyl groups. The preferred range for the number of carbon atoms in the aliphatic hydrocarbon group is as previously described for 1- to trivalent hydrocarbon groups. The number of carbon atoms in substituents is not included in this range.

[0036] Examples of alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and cyclohexyl groups.

[0037] Examples of alkenyl groups include vinyl, allyl, 1-propenyl, butenyl, sec-butenyl, isobutenyl, tert-butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, and decenyl groups.

[0038] Examples of alkylene groups include methylene, ethylene, propylene, butylene, pentylene, and hexylene groups.

[0039] Examples of alkenylene groups include etenylene, propenylene, butenylene, pentenylene, and hexenylene groups.

[0040] Examples of alkanetriyl groups include methanetriyl, ethanetriyl, propanetriyl, butanetriyl, pentanetriyl, and hexantriyl groups.

[0041] Examples of alkenetriyl groups include ethentriyl, propentriyl, butentriyl, pententriyl, and hexentriyl groups.

[0042] X A Examples of aromatic hydrocarbon groups include monovalent aromatic hydrocarbon groups such as aryl groups; divalent aromatic hydrocarbon groups such as arylene groups; and trivalent aromatic hydrocarbon groups such as aryltriyl groups. The number of carbon atoms in the aromatic hydrocarbon group is as described above for 1- to 3-valent hydrocarbon groups, but is preferably 5 or more, more preferably 10 or more, preferably 50 or less, more preferably 40 or less, and even more preferably 30 or less, or 20 or less. The number of carbon atoms of substituents is not included in this number of carbon atoms.

[0043] Examples of aryl groups include phenyl, naphthyl, and anthracenyl groups.

[0044] Examples of arylene groups include phenylene groups, naphthylene groups, indanediyl groups, groups consisting of indanediyl-phenylene, groups represented by formula (x1), and groups represented by formula (x2). Indanediyl groups, groups consisting of indanediyl-phenylene, groups represented by formula (x1), and groups represented by formula (x2) are preferred, groups consisting of indanediyl-phenylene, groups represented by formula (x1), and groups represented by formula (x2) are more preferred, and groups represented by formula (x2) are even more preferred. In the formulas, "*" represents a bond. [ka]

[0045] Examples of aryltriyl groups include benzenetriyl groups, naphthalentriyl groups, indantriyl groups, groups consisting of indantriyl-phenylene, groups consisting of indandiyl-benzenetriyl, groups consisting of trimethylindantriyl-phenylene, and groups consisting of trimethylindandiyl-benzenetriyl.

[0046] X A The 1- to 3-valent hydrocarbon groups in may have substituents. Suitable substituents are as described above, but preferred examples include halogen atoms, -OH, and -OC. 1-6 Alkyl, -N(C 1-10 Alkyl(2), C 1-20 Alkyl alkyl group, C 2-30 Alkenyl group, C 2-30 Alkynyl group, C 6-10 Aryl group, -NH2, -CN, -C(O)OC 1-10 Examples include alkyl groups, -COOH, -C(O)H, -NO2, etc. Among these, C is a particularly important substituent. 1-20 Alkyl alkyl groups are preferred, C 1-10 Alkyl alkyl groups are more preferred, C 1-3 Alkyl groups are more preferred, and methyl groups are particularly preferred. These substituents may be bonded to each other to form a ring, and the ring structure may include spiro rings and fused rings.

[0047] X APreferably, it represents a divalent aromatic hydrocarbon group which may have substituents, more preferably an arylene group which may have substituents, even more preferably an indanediyl group, a group consisting of indanediyl-phenylene, a group represented by formula (x1), or a group represented by formula (x2), even more preferably an indanediyl group, a group represented by formula (x1), or a group represented by formula (x2), and particularly preferably a group represented by formula (x2).

[0048] Y A Each of these independently represents a monovalent group containing a double bond which may have substituents. A Examples of monovalent groups containing double bonds in Y include monovalent groups containing a carbon-carbon double bond (ethylenic double bond), a carbon-oxygen double bond, or any combination thereof. A The monovalent group containing a double bond in this compound may contain multiple carbon-carbon double bonds (ethylenic double bonds) and multiple carbon-oxygen double bonds.

[0049] Y A Examples of monovalent groups containing a double bond include vinyl, allyl, vinylbenzyl, styryl, acryloyl, methacryloyl, fumaroyl, maleoyl, and carbonyl groups. The vinylbenzyl group is preferably one of o-vinylbenzyl, m-vinylbenzyl, or p-vinylbenzyl, with p-vinylbenzyl being preferred.

[0050] Y A The monovalent group containing the double bond in the above may have substituents. As mentioned above, suitable substituents include X A This is the same substituent that may be present on the 1- to 3-valent hydrocarbon group represented by .

[0051] In one preferred embodiment, Y APreferably, it represents an acryloyl group, a methacryloyl group, or a vinylbenzyl group, and more preferably a methacryloyl group or a vinylbenzyl group. In particular, from the viewpoint of realizing a resin composition that yields a cured product with an even lower dielectric loss tangent and better heat resistance (high glass transition temperature) in combination with components (B) and (C), one or more Y A Preferably, the Y group is a vinylbenzyl group, and all n Y groups (1 for n=1, 2 for n=2, 3 for n=3) A It is more preferable that the group is a vinylbenzyl group.

[0052] Each Ar independently represents a divalent aromatic hydrocarbon group having two alkyl groups as substituents, which may be the same or different. The divalent aromatic hydrocarbon group in Ar preferably has 6 to 20 carbon atoms, more preferably 6 to 15 carbon atoms, and even more preferably 6 to 10 carbon atoms. The number of carbon atoms does not include the number of carbon atoms of the alkyl groups as substituents.

[0053] Examples of divalent aromatic hydrocarbon groups in Ar include arylene groups. Examples of arylene groups include phenylene groups, naphthylene groups, indanediyl groups, and groups consisting of indanediyl-phenylene, with phenylene groups being preferred.

[0054] In Ar, the two alkyl groups included as substituents, which may be the same or different, are preferably alkyl groups having 1 to 12 carbon atoms, more preferably alkyl groups having 1 to 10 carbon atoms, even more preferably alkyl groups having 1 to 6 carbon atoms, even more preferably alkyl groups having 1 to 3 carbon atoms, and particularly preferably methyl groups. The substituents may be the same or different, but from the viewpoint of obtaining the effects of the present invention significantly in combination with components (B) and (C), they are preferably the same.

[0055] The bond positions of the two alkyl groups that Ar has as substituents may be any of the ortho, meta, and para positions relative to the site bonded to the oxygen atom in formula (A-1). However, from the viewpoint of significantly obtaining the effects of the present invention in combination with components (B) and (C), it is preferable that both alkyl groups are bonded at the ortho position.

[0056] Z A Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. A The divalent aromatic hydrocarbon group in this compound preferably has 6 to 20 carbon atoms, more preferably 6 to 15 carbon atoms, and even more preferably 6 to 10 carbon atoms. The number of carbon atoms does not include the number of carbon atoms as substituents.

[0057] Z A Examples of divalent aromatic hydrocarbon groups in this compound include arylene groups. Examples of arylene groups include phenylene groups and naphthylene groups, with phenylene groups being preferred. A The divalent aromatic hydrocarbon group in may have substituents. Suitable substituents are as described above, but a preferred example is X A This is the same substituent that may be present on the 1- to 3-valent hydrocarbon group represented by .

[0058] If n represents 2 or 3, then multiple Z A Preferably, at least one of these represents a divalent aromatic hydrocarbon group which may have substituents.

[0059] As mentioned above, X A m m X A This represents an n-valence group formed by the combination of two X's. For example, two X's A When representing a monovalent group formed by the bonding of (m=2, n=1), X A m The formula is: -X A -X A It has a structure represented by; 4 X A When representing a divalent group formed by the bonding of (m=4, n=2), XA m has the structure represented by the formula: -X A -X A -X A -X A - and has a trivalent group formed by the combination of three Xs A When representing a trivalent group formed by the combination of three Xs (m = 3, n = 3), X​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​ (In formula (A-2), Y A , Ar, Z A and m represent the same meanings as described above, X A1 each independently represents a divalent aromatic hydrocarbon group which may have a substituent.)

[0064] Y A , Ar, Z A and m represent the same meanings as described above, and the preferred examples and ranges are also as described in relation to formula (A-1).

[0065] X A1 each independently represents a divalent aromatic hydrocarbon group which may have a substituent. X A1 The number of carbon atoms of the divalent aromatic hydrocarbon group in X is preferably 5 or more, more preferably 10 or more, preferably 50 or less, more preferably 40 or less, still more preferably 30 or less, or 20 or less. The number of carbon atoms of the substituent is not included in the number of carbon atoms.

[0066] X A1 Examples of the divalent aromatic hydrocarbon group in X include an arylene group and the like. Examples of the arylene group include a phenylene group, a naphthylene group, an indanediyl group, a group composed of indanediyl-phenylene, a group represented by formula (x1), a group represented by formula (x2), etc. The indanediyl group, a group composed of indanediyl-phenylene, a group represented by formula (x1), and a group represented by formula (x2) are preferred, the indanediyl group and a group represented by formula (x2) are more preferred, and a group represented by formula (x2) is still more preferred.

[0067] X A1 The divalent aromatic hydrocarbon group in X may have a substituent. The substituents are as described above, and preferred examples are as described in relation to X A in formula (A-1).

[0068] As described above in relation to formula (A-1), two Z AIt is preferable that at least one of them represents a divalent aromatic hydrocarbon group which may have a substituent.

[0069] In one embodiment, the compound represented by formula (A-1) is preferably a compound represented by formula (A-3) (n = 2, and X A is a group represented by formula (x2)).

[0070] [Chemical formula]

[0071] (In formula (A-3), Y A , Ar, Z A and m represent the same meanings as described above.)

[0072] Y A , Ar, Z A and m represent the same meanings as described above, and the preferred examples and ranges are as described in relation to formula (A-1).

[0073] (From the viewpoint of significantly obtaining the effects of the present invention in the combination with component (B) and component (C), preferred component (A) includes compounds represented by the following formula (A-4) or formula (A-5). In the formula, m represents the same meaning as described above, and the preferred range is also as described in relation to formula (A-1). As described above, Y A is a vinylbenzyl group, and the compound represented by formula (A-5) is particularly preferred because it can realize a resin composition that provides a cured product having a lower dielectric tangent and better heat resistance in the combination with component (B) and component (C).

[0074] ) [Chemical formula] <s

[0075] ) In particular, as specific examples of component (A) that are especially suitable from the viewpoint of obtaining the effects of the present invention significantly in combination with components (B) and (C), we can list compounds represented by the following formulas (a1) or (a2). Hereinafter, the compound represented by formula (a1) may be referred to as "compound a1," and the compound represented by formula (a2) may be referred to as "compound a2." In the formulas, m has the same meaning as above, and the suitable range is as explained in relation to formula (A-1).

[0076] [ka]

[0077] (A) Component may be synthesized by known methods. (A) Component may be synthesized, for example, by the method described in International Publication No. 2023 / 008079.

[0078] The weight-average molecular weight of component (A) is preferably 500 or more, more preferably 1000 or more, even more preferably 1200 or more, 1400 or more, or 1500 or more, and preferably 50000 or less, more preferably 10000 or less, and even more preferably 5000 or less, from the viewpoint of obtaining the effects of the present invention in combination with components (B) and (C).

[0079] From the viewpoint of realizing a resin composition that, in combination with components (B) and (C), produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (A) is preferably 20% by mass or more, more preferably 25% by mass or more, even more preferably 30% by mass or more, 32% by mass or more, 34% by mass or more, 36% by mass or more, 38% by mass or more, or 40% by mass or more, when the total resin components in the resin composition are taken as 100% by mass. From the viewpoint of significantly obtaining the effects of the present invention in combination with components (B) and (C), the upper limit of the content of component (A) is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, 68% by mass or less, 66% by mass or less, 64% by mass or less, 62% by mass or less, or 60% by mass or less. (A) When the content of component is within this range, it is preferable because it is easy to achieve a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0080] From the viewpoint of realizing a resin composition that, in combination with components (B) and (C), produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (A) is preferably 3% by mass or more, more preferably 5% by mass or more, even more preferably 6% by mass or more, 8% by mass or more, or 10% by mass or more, when the nonvolatile components in the resin composition are taken as 100% by mass. From the viewpoint of significantly obtaining the effects of the present invention in combination with components (B) and (C), the upper limit of the content of component (A) is preferably 40% by mass or less, more preferably 35% by mass or less, even more preferably 30% by mass or less, 28% by mass or less, 26% by mass or less, 25% by mass or less, 24% by mass or less, 22% by mass or less, or 20% by mass or less. (A) When the content of component is within this range, it is preferable because it is easy to achieve a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0081] <(B) Maleimide compound> The resin composition of the present invention contains a maleimide compound as component (B). Component (B) may be used alone or in combination of two or more types.

[0082] (B) Component is preferably a compound having two or more maleimide groups (2,5-dihydro-2,5-dioxo-1H-pyrrole-1-yl groups) in one molecule.

[0083] Examples of component (B) include (B-1) aliphatic maleimide compounds having an aliphatic group directly bonded to the nitrogen of the maleimide group (in other words, not having an aromatic ring directly bonded to the nitrogen of the maleimide group), and (B-2) aromatic maleimide compounds having an aromatic ring directly bonded to the nitrogen of the maleimide group. Here, maleimide compounds having both an aliphatic group directly bonded to the nitrogen of the maleimide group and an aromatic ring directly bonded to the nitrogen of the maleimide group are treated as (B-2) aromatic maleimide compounds. Direct bonding between the nitrogen of the maleimide group and the aliphatic group means that there are no other groups between the nitrogen atom of the maleimide group and the aliphatic group, and direct bonding between the nitrogen of the maleimide group and the aromatic ring means that there are no other groups between the nitrogen atom of the maleimide group and the aromatic ring.

[0084] Component (B) may be one or more maleimide compounds selected from the group consisting of (B-1) aliphatic maleimide compounds and (B-2) aromatic maleimide compounds. In combination with components (A) and (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, it is preferable that component (B) contains an (B-2) aromatic maleimide compound. From the viewpoint of significantly obtaining the effects of the present invention, the content of the (B-2) aromatic maleimide compound in component (B) is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, 75% by mass or more, 80% by mass or more, 85% by mass or more, or 90% by mass or more. The upper limit of the content of the (B-2) aromatic maleimide compound in component (B) may be 100% by mass, or it may be 99% by mass or less, or 98% by mass or less. Here, the content of the (B-2) aromatic maleimide compound in component (B) refers to the content of the (B-2) aromatic maleimide compound when the total amount of component (B) is taken as 100% by mass. By setting the content of the (B-2) aromatic maleimide compound in component (B) to this range, it is possible to realize a resin composition that produces a cured product with good adhesion to the plated conductor layer even when the plated conductor layer is formed by dry plating, and it is also preferable because it has excellent heat resistance, exhibits an exceptionally low surface roughness after desmear treatment, and significantly suppresses the occurrence of cracks after desmear treatment.

[0085] (B-1) Aliphatic maleimide compounds and (B-2) aromatic maleimide compounds will be described later in their preferred embodiments. When the component (B) contains (B-2) aromatic maleimide compounds, the aromatic maleimide compounds preferably include maleimide compounds having one or more skeletons selected from a biphenyl skeleton, an indane skeleton, and an aralkyl skeleton. When the component (B) contains (B-1) aliphatic maleimide compounds, the aliphatic maleimide compounds preferably include maleimide compounds having a carbon skeleton derived from dimer acid. The carbon skeleton derived from dimer acid means a carbon skeleton obtained by removing two terminal carboxy groups (-COOH) of dimer acid, or a carbon skeleton obtained by replacing two terminal carboxy groups (-COOH) with a methylene group (-CH2-). Dimer acid is a known compound obtained by dimerizing unsaturated fatty acids (preferably those having 11 to 22 carbon atoms, more preferably those having 14 to 20 carbon atoms, and particularly preferably those having 18 carbon atoms), and its industrial manufacturing process is almost standardized in the industry. Dimer acid is mainly composed of dimer acid having 36 carbon atoms obtained by dimerizing unsaturated fatty acids having 18 carbon atoms such as oleic acid and linoleic acid, which are particularly inexpensive and easily available, and can be easily obtained. Further, depending on the production method, the degree of purification, etc., dimer acid may contain an arbitrary amount of monomer acid, trimer acid, other polymerized fatty acids, etc. Also, although double bonds remain after the polymerization reaction of unsaturated fatty acids, in this specification, hydrogenated products obtained by further hydrogenation reaction to reduce the degree of unsaturation are also included in dimer acid.

[0086] Hereinafter, preferred embodiments of (B-1) aliphatic maleimide compounds and (B-2) aromatic maleimide compounds will be shown.

[0087] -(B-1) Aliphatic maleimide compound- In one embodiment, the (B-1) aliphatic maleimide compound is a maleimide compound having a carbon skeleton derived from dimer acid. Examples of such maleimide compounds include maleimide resins represented by the following formula (B1-1).

[0088] [Chemical formula]

[0089] (In formula (B1-1), q1+1 X B Each of these independently represents a divalent organic group consisting of five or more skeletal atoms selected from carbon atoms, nitrogen atoms (that do not form imides), oxygen atoms, and sulfur atoms, and non-skeletal atoms selected from hydrogen atoms and halogen atoms, with q1+1 X B At least one of them represents a divalent hydrocarbon group derived from a dimer acid; q1 Y B Each of these independently represents a tetravalent organic group consisting of five or more skeletal atoms selected from carbon atoms, nitrogen atoms (that do not form imides), oxygen atoms, and sulfur atoms, and non-skeletal atoms selected from hydrogen atoms and halogen atoms; q1 represents 0 or an integer greater than or equal to 1.

[0090] In equation (B1-1), q1+1 X B Each independently represents a divalent organic group consisting of five or more (preferably 5 to 200, more preferably 5 to 100, and even more preferably 5 to 50) skeletal atoms selected from carbon atoms, nitrogen atoms (that do not form imides), oxygen atoms, and sulfur atoms, and non-skeletal atoms selected from hydrogen atoms and halogen atoms, with q1+1 X B At least one of these represents a divalent hydrocarbon group derived from a dimer acid.

[0091] A divalent hydrocarbon group derived from dimer acid refers to a divalent hydrocarbon group obtained by removing the two terminal carboxyl groups (-COOH) of a dimer acid, or a divalent hydrocarbon group obtained by replacing the two terminal carboxyl groups (-COOH) with methylene groups (-CH2-).

[0092] q1+1 X B The divalent organic groups other than the divalent hydrocarbon groups derived from the dimer acid may be divalent organic groups without an aromatic ring, or divalent organic groups having an aromatic ring.

[0093] In equation (B1-1), q1 Y B Each independently represents a tetravalent organic group consisting of five or more (preferably 5 to 200, more preferably 5 to 100, and even more preferably 5 to 50) skeletal atoms selected from carbon atoms, nitrogen atoms (that do not form imides), oxygen atoms, and sulfur atoms, and non-skeletal atoms selected from hydrogen atoms and halogen atoms. B The tetravalent organic group indicated by may be a tetravalent organic group without an aromatic ring, or a tetravalent organic group having an aromatic ring.

[0094] Y B In one embodiment, the tetravalent organic group represented by is preferably a tetravalent group selected from the following formulas (Y1) to (Y5).

[0095] [ka]

[0096] (In formulas (Y1) to (Y5), Ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 Each of these independently represents an aromatic ring which may have substituents, or an unaromatic ring which may have substituents; Y 2a , Y 3a , Y 3b , Y 4a , Y 4b , Y 4c , Y 5a , Y 5b , Y 5c and Y 5dThese are, independently, single bonds, -C(R B11 ) represents -2-, -O-, -CO-, -S-, -SO-, -SO2-, -CONH-, or -NHCO-; R B11 Each independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom, or two R atoms bonded to the same carbon atom. B11 They bond together to form a non-aromatic ring which may have substituents; * indicates a binding site; The two bonding sites on the same ring, represented by *, are bonding sites with two adjacent carbon atoms on that ring.

[0097] In equations (Y1) to (Y5), ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 Each of these independently represents an optionally substituted aromatic ring or an optionally substituted non-aromatic ring. These cyclic structures are preferably optionally substituted aromatic rings, more preferably optionally substituted benzene rings, and even more preferably alkyl-substituted benzene rings.

[0098] A non-aromatic ring refers to a ring other than an aromatic ring. A non-aromatic ring may be a non-aromatic carbocyclic ring having only carbon atoms as ring constituent atoms, or it may be a non-aromatic heterocyclic ring having heteroatoms such as oxygen, nitrogen, or sulfur atoms in addition to carbon atoms as ring constituent atoms. Non-aromatic carbocyclic rings are preferred. Non-aromatic rings may be saturated or unsaturated rings. Non-aromatic rings with 3 to 21 members are preferred, non-aromatic rings with 4 to 17 members are more preferred, and non-aromatic rings with 5 to 14 members are even more preferred. Suitable examples of non-aromatic rings (non-aromatic carbon rings) include monocyclic non-aromatic saturated carbon rings such as cyclobutane rings, cyclopentane rings, cyclohexane rings, cycloheptane rings, and cyclooctane rings; monocyclic non-aromatic unsaturated carbon rings such as cyclobutene rings, cyclopentene rings, cyclohexene rings, cycloheptene rings, cyclooctene rings, cyclopentadiene rings, and cyclohexadiene rings; bicyclo[2.2.1]heptane rings (norbornane rings), bicyclo[4.4.0]decane rings (decalin rings), bicyclo[5.3.0]decane rings, bicyclo[4.3.0]nonane rings (hydrindane rings), bicyclo[3.2.1]octane rings, bicyclo[5.4.0]undecane rings, bicyclo[3.3.0]octane rings, bicyclo[3.3.1]nonane rings, and tricyclo[5.2.1.0 2,6 ] Decane ring (tetrahydrodicyclopentadiene ring), tricyclo[3.3.1.1 3,7 ] Decane ring (adamantane ring), tricyclo[6.2.1.0 2,7 Examples of non-aromatic saturated carbocyclic rings with two or more rings, such as undecane rings; bicyclo[2.2.1]hepta-2-ene rings (norbornene rings), bicyclo[2.2.2]octa-2-ene rings, bicyclo[4.4.0]deca-2-ene rings, and other non-aromatic unsaturated carbocyclic rings with two or more rings. Non-aromatic rings may also be non-aromatic rings in which an aromatic ring is partially fused. Examples of non-aromatic rings in which an aromatic ring is partially fused include indane rings, indene rings, tetralin rings, 1,2-dihydronaphthalene rings, 1,4-dihydronaphthalene rings, fluorene rings, 9,10-dihydroanthracene rings, and 9,10-dihydrophenanthrene rings.

[0099] Ring Y 11 , ring Y 21, ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 The substituents that can be present are as described above, but preferred examples include halogen atoms, -NO2, -CN, -COH, -OH, -SH, -NH2, -COOH, and -R B , -COR B , -OR B , -SR B -SOR B , -SO2R B , -NHR B , -NR B ,-COOR B , -OCOR B -CONH2, -CONHR B ,-CONR B , -NHCOR B Examples of monovalent substituents include (where R B Each of these independently represents a monovalent hydrocarbon group.

[0100] R B The number of carbon atoms in the monovalent hydrocarbon group represented is preferably 1 to 50, more preferably 1 to 20. B The monovalent hydrocarbon group represented by may be a monovalent saturated hydrocarbon group or a monovalent unsaturated hydrocarbon group. Also, R B The monovalent hydrocarbon group represented by may or may not have an aromatic structure. B Examples of monovalent hydrocarbon groups represented by include alkyl groups, alkenyl groups, aryl groups, aralkyl groups, and alkylaryl groups.

[0101] Alkyl groups may be linear, branched, or cyclic. The number of carbon atoms in an alkyl group is preferably 1 to 14, more preferably 1 to 10, even more preferably 1 to 6, and particularly preferably 1 to 3. Examples of alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, sec-pentyl, neopentyl, tert-pentyl, hexyl, isohexyl, heptyl, isoheptyl, octyl, isooctyl, tert-octyl, cyclopentyl, cyclohexylmethyl, and the like.

[0102] The alkenyl group may be linear, branched, or cyclic. The number of carbon atoms in the alkenyl group is preferably 2 to 14, more preferably 2 to 10, even more preferably 2 to 6, and particularly preferably 2 to 3. Examples of alkenyl groups include vinyl group, propenyl group (allyl group, 1-propenyl group, isopropenyl group), butenyl group (1-butenyl group, clotyl group, methallyl group, isoclotyl group, etc.), pentenyl group (1-pentenyl group, etc.), hexenyl group (1-hexenyl group, etc.), heptenyl group (1-heptenyl group, etc.), octenyl group (1-octenyl group, etc.), cyclopentenyl group (2-cyclopentenyl group, etc.), cyclohexenyl group (3-cyclohexenyl group), and the like.

[0103] The number of carbon atoms in the aryl group is preferably 6 to 14, more preferably 6 to 10. Examples of aryl groups include phenyl, 1-naphthyl, and 2-naphthyl groups.

[0104] The aralkyl group may be an alkyl group substituted with one or more (preferably one) aryl groups. The number of carbon atoms in the aralkyl group is preferably 7 to 15, more preferably 7 to 11. Examples of aralkyl groups include benzyl group, phenethyl group, hydrocinnamyl group, α-methylbenzyl group, α-cumyl group, 1-naphthylmethyl group, and 2-naphthylmethyl group.

[0105] The alkylaryl group may be an aryl group substituted with one or more (preferably one) alkyl groups. The number of carbon atoms in the alkylaryl group is preferably 7 to 15, more preferably 7 to 11. Examples of alkylaryl groups include 4-methylphenyl, 3-methylphenyl, 2-methylphenyl, 4-ethylphenyl, 3-ethylphenyl, 2-ethylphenyl, 4-isopropylphenyl, 3-isopropylphenyl, and 2-isopropylphenyl.

[0106] In equations (Y1) to (Y5), Y 2a , Y 3a , Y 3b , Y 4a , Y 4b , Y 4c , Y 5a , Y 5b , Y 5c and Y 5d These are, independently, single bonds, -C(R B11 )2-, -O-, -CO-, -S-, -SO-, -SO2-, -CONH-, or -NHCO-, preferably a single bond, -C(R B11 )2-, or -O-.

[0107] R B11 Each of these independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom, or two R atoms bonded to the same carbon atom. B11 They bond together to form a non-aromatic ring which may have substituents. The alkyl group is R B It may be the same as the alkyl group in R. B11 Each of these independently preferably represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom; more preferably represents a methyl group which may be substituted with a hydrogen atom or a halogen atom; even more preferably represents a hydrogen atom, a methyl group or a trifluoromethyl group; and even more preferably represents a hydrogen atom or a methyl group.

[0108] R B11The substituents that can be present are as described above, but preferred examples include halogen atoms, -NO2, -CN, -COH, -OH, -SH, -NH2, -COOH, and -R B , -COR B , -OR B , -SR B -SOR B , -SO2R B , -NHR B , -NR B ,-COOR B , -OCOR B -CONH2, -CONHR B ,-CONR B , -NHCOR B Examples of monovalent substituents include (R B (As stated above).

[0109] In formula (B1-1), q1 represents 0 or an integer greater than or equal to 1, preferably an integer between 0 and 1 to 10, and more preferably 0.

[0110] -(B-2) Aromatic Maleimide Compounds- In one preferred embodiment, the (B-2) aromatic maleimide compound is a maleimide compound represented by the following formula (B1-2).

[0111] [ka]

[0112] (In formula (B1-2), R B12 Each of these independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom; Ring B 21 Each of these independently represents an aromatic carbon ring which may have substituents; q2 represents an integer greater than or equal to 1; q2 units may be the same or different for each unit.

[0113] In equation (B1-2), R B12Each of these independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom. The alkyl group is R B It may be the same as the alkyl group in R. B12 Each of these independently preferably represents a hydrogen atom or an alkyl group; more preferably a hydrogen atom or a methyl group; and even more preferably a hydrogen atom.

[0114] In equation (B1-2), ring B 21 Each of these independently represents an aromatic carbon ring, which may have substituents. The aromatic carbon ring is a ring Y. 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 It may be the same as the aromatic carbocyclic ring described in the section on aromatic rings. Also, ring B 21 The substituents in are as described above, but for example, ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 The substituents may be the same as those that can be present in ring B. 21 Each of these independently preferably represents a benzene ring which may have substituents; more preferably a benzene ring which may have substituents selected from alkyl and aryl groups; and even more preferably an (unsubstituted) benzene ring.

[0115] In equation (B1-2), q2 represents an integer greater than or equal to 1, and is preferably an integer between 1 and 10.

[0116] In other preferred embodiments, the (B-2) aromatic maleimide compound is a maleimide compound represented by the following formula (B1-3).

[0117] [ka]

[0118] (In formula (B1-3), R B13 Each of these independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom; Ring B 31 , ring B 32 and ring B 33 Each of these independently represents an aromatic carbon ring which may have substituents; q3 represents an integer greater than or equal to 1; q3 The units may be the same or different for each unit.

[0119] In equation (B1-3), R B13 Each of these independently represents an alkyl group which may be substituted with a hydrogen atom or a halogen atom. The alkyl group is R B It may be the same as the alkyl group in R. B13 Each of these is preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom or a methyl group, and even more preferably a hydrogen atom.

[0120] In equation (B1-3), ring B 31 , ring B 32 and ring B 33 Each of these independently represents an aromatic carbon ring which may have substituents. Ring B 31 , ring B 32 and ring B 33 The aromatic carbon ring shown is ring Y. 11 , ring Y 21 , ring Y22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 It may be the same as the aromatic carbocyclic ring described in the section on aromatic rings. Also, ring B 31 , ring B 32 and ring B 33 The substituents in are as described above, but for example, ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 The substituents may be the same as those that can be present in ring B. 31 , ring B 32 and ring B 33 Each of these is preferably an optionally substituted benzene ring, more preferably an optionally substituted benzene ring with a group selected from alkyl and aryl groups, and even more preferably an unsubstituted benzene ring.

[0121] In equation (B1-3), q3 represents an integer greater than or equal to 1, and is preferably an integer between 1 and 10.

[0122] In another preferred embodiment, the (B-2) aromatic maleimide resin is a maleimide compound represented by the following formula (B1-4).

[0123] [ka]

[0124] (In formula (B1-4), R B14 Each of these independently represents an alkyl group; Ring B 41 and ring B 42 Each of these independently represents an aromatic carbon ring which may have substituents; q4 represents an integer greater than or equal to 1; q4 The units may be the same or different for each unit.

[0125] In equation (B1-4), R B14 Each of these independently represents an alkyl group. B14 It is preferable that it be a methyl group.

[0126] In equation (B1-4), ring B 41 Each of these independently represents an aromatic carbon ring which may have substituents. Also, ring B 41 The substituents in are as described above, but for example, ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 The substituents may be the same as those that can be present in ring B. 41 Each of these is preferably an optionally substituted benzene ring, more preferably an optionally substituted benzene ring with an alkyl group, and even more preferably an alkyl group-substituted benzene ring.

[0127] In equation (B1-4), ring B 42 Each of these independently represents an aromatic carbon ring which may have substituents. Also, ring B 42The substituents in are as described above, but for example, ring Y 11 , ring Y 21 , ring Y 22 , ring Y 31 , ring Y 32 , ring Y 33 , ring Y 41 , ring Y 42 , ring Y 43 , ring Y 44 , ring Y 51 , ring Y 52 , ring Y 53 , ring Y 54 and ring Y 55 The substituents may be the same as those that can be present in ring B. 42 Each of these is preferably an optionally substituted benzene ring, more preferably an optionally substituted alkyl group benzene ring, and even more preferably an unsubstituted benzene ring.

[0128] In equation (B1-4), q4 represents an integer greater than or equal to 1, and is preferably an integer between 1 and 20.

[0129] In another preferred embodiment, the (B-2) aromatic maleimide compound is a maleimide compound represented by the following formula (B1-5-1). [ka]

[0130] (In formula (B1-5-1), R B15 Each of these independently represents an alkylene group; R B16 Each of these independently represents an alkyl group; Z B1 represents a hydrogen atom or a group represented by the following formula (B1-5-2); Z B2 represents a hydrogen atom or a group represented by the following formula (B1-5-3); q 51 This represents an integer greater than or equal to 1, q 51The units may be the same or different for each unit.

[0131] [ka]

[0132] (In formulas (B1-5-2) and (B1-5-3), R S1 Each of these independently represents a hydrocarbon group having 1 to 18 carbon atoms; s1 represents an integer from 0 to 5; * indicates a binding site; The other symbols are as described above.

[0133] In equations (B1-5-1) and (B1-5-2), R B15 Each of these independently represents an alkylene group. B15 The group is preferably a methylene group, an ethylene group, or an ethylidene group, and more preferably an ethylidene group.

[0134] In equations (B1-5-1) and (B1-5-3), R B16 Each of these independently represents an alkyl group. B16 It is preferable that it be an ethyl group.

[0135] In equation (B1-5-2), R S1 Each of these independently represents a hydrocarbon group with 1 to 18 carbon atoms. S1 It is preferably an alkyl group, and more preferably an ethyl group.

[0136] In equation (B1-5-1), q 51 represents an integer greater than or equal to 1. In formula (B1-5-2), s1 represents an integer between 0 and 5. s1 is preferably 4 or less, more preferably 3 or less, even more preferably 2 or less, and even more preferably 1 or less. In a preferred embodiment, s1 may be 0 or 1.

[0137] In another preferred embodiment, the (B-2) aromatic maleimide compound is a maleimide compound containing the structural unit of the following formula (B1-6-1).

[0138] [ka]

[0139] (in formula (B1-6-1) R B17 Each of these independently represents an alkylene group; L B1 Each of these independently represents a single bond or -O-; R B18 Each of these independently represents an alkyl group; Z B3 This represents the base represented by the following formula (B1-6-2); R S2 and R S3 Each of these independently represents a hydrocarbon group having 1 to 18 carbon atoms; q 61 Each of these independently represents an integer of 0 or greater than or equal to 1; q 61 The units may be the same or different for each unit; q 62 Each of these independently represents an integer of 0 or greater than or equal to 1; q 62 The units may be the same or different for each unit; q 63 Each of these independently represents an integer of 0 or greater than or equal to 1; q 63 The units may be the same or different for each unit; s2 and s3 independently represent 0, 1, or 2, satisfying the relationship 0 ≤ s2 + s3 ≤ 2; Each of s4 independently represents either 0 or an integer from 1 to 4.

[0140] [ka]

[0141] (In formula (B1-6-2), R S4 Each of these independently represents a hydrocarbon group having 1 to 18 carbon atoms; q 64 Each of these independently represents an integer of 0 or greater than or equal to 1; q 64 The units may be the same or different for each unit; Each of s5 independently represents either 0 or an integer from 1 to 5; * indicates a binding site; The other symbols are as described above.

[0142] In equations (B1-6-1) and (B1-6-2), R B17 Each of these independently represents an alkylene group. B17 The group is preferably a methylene group, an ethylene group, or an ethylidene group, and more preferably a methylene group.

[0143] In equation (B1-6-1), R B18 Each of these independently represents an alkyl group. B18 It is preferable that it be an ethyl group.

[0144] In equation (B1-6-1), R S2 and R S3 Each of these independently represents a hydrocarbon group with 1 to 18 carbon atoms. S2 and R S3 It is preferably an alkyl group, and more preferably a methyl group.

[0145] In equation (B1-6-2), R S4 Each of these independently represents a hydrocarbon group with 1 to 18 carbon atoms. S4 It is preferably an alkyl group, and more preferably a methyl group.

[0146] In equation (B1-6-1), s2 and s3 independently represent 0, 1, or 2, and s2 and s3 satisfy the relationship 0 ≤ s2 + s3 ≤ 2.

[0147] In formula (B1-6-1), s4 independently represents either 0 or an integer from 1 to 4. s4 is preferably 3 or less, more preferably 2 or less, and even more preferably 1 or less. In a preferred embodiment, s4 may be 0 or 1.

[0148] In formula (B1-6-2), s5 independently represents either 0 or an integer from 1 to 5. s5 is preferably 4 or less, more preferably 3 or less, even more preferably 2 or less, and even more preferably 1 or less. In a preferred embodiment, s5 may be 0 or 1.

[0149] The maleimide group equivalent of component (B) is preferably 50 g / eq. or more, more preferably 100 g / eq. or more, even more preferably 150 g / eq. or more, 160 g / eq. or more, 180 g / eq. or more, or 200 g / eq. or more, with an upper limit preferably 2,000 g / eq. or less, more preferably 1,000 g / eq. or less, even more preferably 800 g / eq. or less, 600 g / eq. or less, 500 g / eq. or less, or 450 g / eq. or less. The maleimide group equivalent is the mass of component (B) per molar equivalent of maleimide groups.

[0150] The molecular weight of component (B) is preferably less than 5,000, more preferably less than 3,000, even more preferably less than 2,000, less than 1,500, less than 1,200, or less than 1,000, and the lower limit is not particularly limited, but may be, for example, 300 or more, 400 or more, 500 or more, etc.

[0151] (B) Examples of commercially available components include, for (B-1) aliphatic maleimide compounds, maleimide compounds having a carbon skeleton derived from dimer acid (compounds represented by the above formula (B1-1)), such as "SLK-2600", "SLK-2700-T50", and "SLK-6895-T90" manufactured by Shin-Etsu Chemical Co., Ltd.; and maleimide compounds having a carbon skeleton derived from dimer acid (compounds represented by the above formula (B1-1)), such as "BMI-1500", "BMI-1700", "BMI-3000", "BMI-3000J", "BMI-689", and "BMI-2500" manufactured by Designer Molecules Inc. Furthermore, (B-2) Aromatic maleimide compounds include, for example, diisopropylidenebenzene-type maleimide compounds such as "MIR-5000-60T" manufactured by Nippon Kayaku Co., Ltd. (compounds represented by the above formula (B1-2)), biphenylaralkyl-type maleimide resins such as "MIR-3000-70MT" and "MIR-3000-70T" manufactured by Nippon Kayaku Co., Ltd. (compounds represented by the above formula (B1-3)); aromatic maleimide compounds such as "BMI-6100" manufactured by Designer Molecules Inc.; "BMI-70" and "BMI-80" manufactured by K.I. Chemicals Co., Ltd.; and "BMI-2300" and "BMI-TMH" manufactured by Yamato Chemical Industries, Ltd. In addition, as maleimide resins, maleimide resins disclosed in the Japan Institute of Invention and Innovation Publication No. 2020-500211 (indane ring skeleton-containing maleimide compounds; compounds represented by the above formula (B1-4)) may be used.

[0152] Furthermore, the maleimide resin represented by formula (B1-5-1) may be synthesized by known synthesis methods, for example, or a commercially available product may be used. Examples of known synthesis methods include the method described in Synthesis Example 1 of Japanese Patent Application Publication No. 2024-102755.

[0153] Furthermore, as the maleimide resin containing the structural unit represented by formula (B1-6-1), for example, a maleimide resin produced by the following steps (1) and (2) may be used. Step (1): A step of reacting an aromatic amine compound represented by the following formula (b1) with a compound having a benzyl ether skeleton under a solid acid catalyst. Step (2): A step of condensing the intermediate amine compound produced in step (1) with maleic anhydride.

[0154] [ka]

[0155] (In formula (b1), R b1 This represents a hydrocarbon group with 1 to 18 carbon atoms; R b2 and R b3 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 18 carbon atoms; R b4 and R b5 Each of these independently represents either a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.

[0156] From the viewpoint of realizing a resin composition that, in combination with component (A) and component (C), produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (B) is preferably 10% by mass or more, more preferably 15% by mass or more, even more preferably 20% by mass or more, 25% by mass or more, 30% by mass or more, 32% by mass or more, 34% by mass or more, 36% by mass or more, 38% by mass or more, or 40% by mass or more. From the viewpoint of significantly obtaining the effects of the present invention in combination with component (A) and component (C), the upper limit of the content of component (B) is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, 68% by mass or less, 66% by mass or less, 64% by mass or less, 62% by mass or less, or 60% by mass or less. (B) When the content of component (B) is within this range, it is preferable because it is easy to achieve a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0157] From the viewpoint of realizing a resin composition that, in combination with component (A) and component (C), produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (B) is preferably 3% by mass or more, more preferably 5% by mass or more, even more preferably 6% by mass or more, 8% by mass or more, or 10% by mass or more, when the nonvolatile components in the resin composition are taken as 100% by mass. From the viewpoint of significantly obtaining the effects of the present invention in combination with component (A) and component (C), the upper limit of the content of component (B) is preferably 40% by mass or less, more preferably 35% by mass or less, even more preferably 30% by mass or less, 28% by mass or less, 26% by mass or less, 25% by mass or less, 24% by mass or less, 22% by mass or less, 20% by mass or less, or 18% by mass or less. (B) When the content of component (B) is within this range, it is preferable because it is easy to achieve a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0158] From the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, when the resin component in the resin composition is taken as 100% by mass, the total content of component (A) and component (B) is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more or 80% by mass or more, and even more preferably 85% by mass or more or 90% by mass or more. From the viewpoint of significantly obtaining the effects of the present invention, the upper limit of the total content of component (A) and component (B) is preferably 99.5% by mass or less, more preferably 99% by mass or less, and even more preferably 98.5% by mass or less or 98% by mass or less. When the total content of component (A) and component (B) is within such a range, it is preferable because it is easier to realize a cured product with particularly good heat resistance and particularly good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0159] From the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, when the non-volatile components in the resin composition are taken as 100% by mass, the total content of components (A) and (B) is preferably 10% by mass or more, more preferably 15% by mass or more, even more preferably 20% by mass or more, 22% by mass or more, 24% by mass or more, or 25% by mass or more. From the viewpoint of significantly obtaining the effects of the present invention, the upper limit of the total content of components (A) and (B) is preferably 50% by mass or less, more preferably 45% by mass or less, even more preferably 40% by mass or less, or 35% by mass or less. When the total content of components (A) and (B) is within such a range, it is preferable because it is easier to realize a cured product with particularly good heat resistance and particularly good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0160] As described above, from the viewpoint of significantly obtaining the effects of the present invention in combination with components (A) and (C), it is preferable that component (B) contains the (B-2) aromatic maleimide compound. When the resin components in the resin composition are considered as 100% by mass, the content of the (B-2) aromatic maleimide compound is preferably 20% by mass or more, more preferably 25% by mass or more, even more preferably 30% by mass or more, 32% by mass or more, 34% by mass or more, 36% by mass or more, 38% by mass or more, or 40% by mass or more. From the viewpoint of significantly obtaining the effects of the present invention in combination with components (A) and (C), the upper limit of the content of the (B-2) aromatic maleimide compound is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, 68% by mass or less, 66% by mass or less, 64% by mass or less, 62% by mass or less, or 60% by mass or less. (B-2) When the content of the aromatic maleimide compound is within this range, it is possible to realize a resin composition that yields a cured product with good adhesion to the plated conductor layer even when the plated conductor layer is formed by dry plating, and it is also preferable because it can significantly suppress the occurrence of cracks after desmear treatment. Furthermore, when the content of the aromatic maleimide compound (B-2) is within this range, the heat resistance is even better, and it is also preferable because it is easier to realize a cured product with even better adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0161] From the viewpoint of significantly obtaining the effects of the present invention in combination with component (A) and component (C), when the nonvolatile component in the resin composition is taken as 100% by mass, the content of the (B-2) aromatic maleimide compound is preferably 3% by mass or more, more preferably 5% by mass or more, even more preferably 6% by mass or more, 8% by mass or more, or 10% by mass or more. From the viewpoint of significantly obtaining the effects of the present invention in combination with component (A) and component (C), the upper limit of the content of the (B-2) aromatic maleimide compound is preferably 40% by mass or less, more preferably 35% by mass or less, even more preferably 30% by mass or less, 28% by mass or less, 26% by mass or less, 25% by mass or less, 24% by mass or less, 22% by mass or less, 20% by mass or less, or 18% by mass or less. When the content of the (B-2) aromatic maleimide compound is within such a range, it is possible to realize a resin composition that provides a cured product with good adhesion to the plated conductor layer even when the plated conductor layer is formed by dry plating, and it is also preferable because it can significantly suppress the occurrence of cracks after desmear treatment. Furthermore, (B-2) When the content of aromatic maleimide compounds is within this range, the heat resistance is even better, and it is easier to achieve a cured product with even better adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST), making it preferable.

[0162] From the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the mass ratio of component (A) to component (B) ((B) component / (A) component) is preferably 0.05 or more, more preferably 0.1 or more, even more preferably 0.2 or more, 0.3 or more, or 0.4 or more. From the viewpoint of significantly obtaining the effects of the present invention, the upper limit of this mass ratio is preferably 5 or less, more preferably 4 or less, even more preferably 3 or less, 2.5 or less, 2.3 or less, 2.1 or less, 2.0 or less, or 1.9 or less. Furthermore, the mass ratio of component (A) to (B-2) aromatic maleimide compound ((B-2) aromatic maleimide compound / (A) component) is preferably 0.05 or more, more preferably 0.1 or more, even more preferably 0.2 or more, 0.3 or more, or 0.4 or more. The upper limit of the mass ratio is preferably 5 or less, more preferably 4 or less, even more preferably 3 or less, 2.5 or less, 2.3 or less, 2.1 or less, 2.0 or less, 1.9 or less, 1.8 or less, 1.7 or less, 1.6 or less, or 1.5 or less, from the viewpoint of significantly obtaining the effects of the present invention. When the mass ratio of component (A) to the aromatic maleimide compound (B-2) is within this range, the effects of the present invention can be obtained more significantly, and even when the plated conductor layer is formed by dry plating, a resin composition that provides a cured product with good adhesion to the plated conductor layer can be realized, and the occurrence of cracks after desmear treatment can be significantly suppressed, making it preferable.

[0163] <(C) Inorganic filler> The resin composition of the present invention contains an inorganic filler as component (C). Component (C) may be used alone or in combination of two or more types.

[0164] Examples of materials for component (C) include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum silicate, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica is particularly preferred. Examples of silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. Spherical silica is preferred as the silica. The inorganic filler may be used alone or in combination of two or more types.

[0165] Examples of commercially available products containing component (C) include "SP60-05" and "SP507-05" from Nippon Steel Chemical & Material Co., Ltd.; "YC100C", "YA050C", "YA050C-MJE", "YA010C", "SC2500SQ", "SO-C4", "SO-C2", and "SO-C1" from Admatex Co., Ltd.; "UFP-30", "DAW-03", and "FB-105FD" from Denka Co., Ltd.; "Silfil NSS-3N", "Silfil NSS-4N", and "Silfil NSS-5N" from Tokuyama Corporation; and "Cellspheres" and "MGH-005" from Taiheiyo Cement Corporation.

[0166] The average particle size of component (C) is not particularly limited, but is preferably 10 μm or less, more preferably 5 μm or less, even more preferably 3 μm or less, 2 μm or less, 1 μm or less, 0.8 μm or less, or 0.7 μm or less. The lower limit of the average particle size is not particularly limited, but is preferably 0.01 μm or more, more preferably 0.05 μm or more, even more preferably 0.07 μm or more, 0.1 μm or more, or 0.2 μm or more. The average particle size of component (C) can be measured by the laser diffraction-scattering method based on Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be prepared on a volume basis using a laser diffraction-scattering particle size distribution analyzer, and the median diameter can be used as the average particle size. A sample can be prepared by weighing 100 mg of inorganic filler and 10 g of methyl ethyl ketone into a vial and dispersing them using ultrasound for 10 minutes. The particle size distribution of the inorganic filler was measured using a laser diffraction particle size distribution analyzer with blue and red light source wavelengths, employing a flow cell method. The average particle size was calculated as the median diameter from the obtained particle size distribution. Examples of laser diffraction particle size distribution analyzers include the "LA-960" manufactured by Horiba, Ltd.

[0167] The specific surface area of ​​component (C) is not particularly limited, but is preferably 0.1 m². 2 / g or more, more preferably 0.5m 2 / g or more, more preferably 1m 2 / g or more, 3m 2 / g or more or 5m 2 The specific surface area is 100 m² or more. The upper limit of the specific surface area is not particularly limited, but is preferably 100 m². 2 / g or less, more preferably 80m 2 / g or less, more preferably 60mg 2 / g or less, 50m 2 / g or less or 40m 2 The value is less than or equal to / g. The specific surface area of ​​component (C) is obtained by adsorbing nitrogen gas onto the sample surface using a specific surface area measuring device (Macsorb HM-1210, manufactured by Mountec Co., Ltd.) according to the BET method, and calculating the specific surface area using the BET multipoint method.

[0168] Component (C) is preferably surface-treated with an appropriate surface treatment agent. Surface treatment can improve the moisture resistance and dispersibility of component (C). Examples of surface treatment agents include silane coupling agents such as vinyl silane coupling agents, epoxy silane coupling agents, styryl silane coupling agents, (meth)acrylic silane coupling agents, amino silane coupling agents, isocyanurate silane coupling agents, ureido silane coupling agents, mercapto silane coupling agents, isocyanate silane coupling agents, and acid anhydride silane coupling agents; non-silane coupling alkoxysilane compounds such as methyltrimethoxysilane and phenyltrimethoxysilane; and silazane compounds. The surface treatment agent may be used alone or in combination of two or more types.

[0169] Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane), "KBM803" (3-mercaptopropyltrimethoxysilane), "KBE903" (3-aminopropyltriethoxysilane), "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), and "SZ-31" (hexamethyldisilazane), all manufactured by Shin-Etsu Chemical Co., Ltd.

[0170] From the viewpoint of improving the dispersibility of the inorganic filler, the degree of surface treatment by the surface treatment agent is preferably within a predetermined range. Specifically, it is preferable that 100% by mass of the inorganic filler is surface-treated with 0.2 to 5% by mass of the surface treatment agent.

[0171] From the viewpoint of realizing a resin composition that, in combination with component (A) and component (B), produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (C) is preferably 40% by mass or more, more preferably 50% by mass or more, even more preferably 55% by mass or more, 60% by mass or more, 65% by mass or more, or 70% by mass or more, when the nonvolatile components in the resin composition are taken as 100% by mass. From the viewpoint of significantly obtaining the effects of the present invention, the upper limit of the content of component (C) is preferably 90% by mass or less, more preferably 85% by mass or less, even more preferably 84% by mass or less, 82% by mass or less, or 80% by mass or less.

[0172] From the viewpoint of significantly obtaining the effects of the present invention, and from the viewpoint of easily realizing a cured product with even better heat resistance and even better adhesion to the conductive layer even after high temperature and high humidity environment testing (HAST), when the nonvolatile components in the resin composition are taken as 100% by mass, the total content of components (A), (B), and (C) is preferably 90% by mass or more, more preferably 92% by mass or more, even more preferably 94% by mass or more, 95% by mass or more, or 96% by mass or more. The upper limit of this total can be, for example, 99.95% by mass or less, 99.94% by mass or less, 99.92% by mass or less, 99.9% by mass or less, etc.

[0173] The resin composition of the present invention may further contain components selected from (D) thermoplastic resin, (E) curing accelerator, (F) resin containing an ethylenic double bond (excluding those corresponding to components (A) to (E)), (G) epoxy resin, and (H) epoxy resin curing agent. Each component will be described below.

[0174] <(D) Thermoplastic resin> The resin composition of the present invention may include a thermoplastic resin as component (D). The thermoplastic resin as component (D) does not include those corresponding to components (A) and (B) described above. Component (D) may be used alone or in combination of two or more types.

[0175] Examples of component (D) include polyimide resin, phenoxy resin, polystyrene resin, polyvinyl acetal resin, polyolefin resin, polybutadiene resin, polyamideimide resin, polyetherimide resin, polysulfone resin, polyethersulfone resin, polyphenylene ether resin, polycarbonate resin, polyetheretherketone resin, polyester resin, etc. Among these, it is preferable that component (D) contains one or more selected from polyimide resin, phenoxy resin, and polystyrene resin.

[0176] As the polyimide resin, a resin having an imide structure can be used. Polyimide resins can generally be obtained by an imidation reaction between a diamine compound and an acid anhydride, or by an imidation reaction between a diisocyanate compound and an acid anhydride. Specific examples of polyimide resins include, for example, linear polyimides obtained by reacting a bifunctional hydroxyl-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride (polyimide described in Japanese Patent Publication No. 2006-37083), and modified polyimides containing a polysiloxane skeleton (polyimides described in Japanese Patent Publication No. 2002-12667 and Japanese Patent Publication No. 2000-319386, etc.). Commercially available polyimide resins may also be used, for example, "Ricacoat SN20" and "Ricacoat PN20" manufactured by Shin Nippon Rika Co., Ltd. Polyimide resins may be used alone or in combination of two or more types.

[0177] In one preferred embodiment, the polyimide resin contains structural units represented by the following formula (1) (hereinafter also referred to as "structural unit (1)"). The number of structural units (1) contained in one molecule of polyimide resin is 1 or more, and is not particularly limited, but may be 100 or less, 50 or less, or 30 or less.

[0178] [ka]

[0179] (In formula (1), R1 is a tetravalent group represented by the following formula (1-1): R2 is a divalent group represented by the following formula (1-2).

[0180] [ka]

[0181] (In formula (1-1), Ar 11 Ar 12 Ar 13 and Ar 14 Each of these independently represents an aromatic ring which may have substituents, L 11 , L 12 and L 13 Each of these independently represents a divalent linking group. nc1 represents a non-negative integer.

[0182] [ka]

[0183] (In formula (1-2), Ar 21 Ar 22 Ar 23 and Ar 24 Each of these independently represents an aromatic ring which may have substituents, L 21 , L 22 and L 23 Each of these independently represents a divalent linking group. nc2 represents an integer greater than or equal to 1.

[0184] In formula (1-1), Ar 11 Ar 12 Ar 13 and Ar 14 Each of these independently represents an aromatic ring that may or may not have substituents. 11 Ar 12 Ar 13 and Ar 14The aromatic ring represented by (hereinafter also referred to as "aromatic ring D") is preferably an aromatic ring having 6 to 100 carbon atoms, more preferably 6 to 50 carbon atoms, and even more preferably an aromatic carbon ring having 6 to 100 carbon atoms, and even more preferably 6 to 50 carbon atoms.

[0185] Ar 11 Ar 12 Ar 13 and Ar 14 Examples of aromatic rings represented by Ar include monocyclic aromatic rings such as benzene rings, furan rings, thiophene rings, pyrrole rings, pyrazole rings, oxazole rings, isoxazole rings, thiazole rings, imidazole rings, pyridine rings, pyridazine rings, pyrimidine rings, and pyrazine rings; condensed rings formed by the fusion of two or more monocyclic aromatic rings such as naphthalene rings, anthracene rings, benzofuran rings, isobenzofuran rings, indole rings, isoindole rings, benzothiophene rings, benzimidazole rings, indazole rings, benzoxazole rings, benzoisoxazole rings, benzothiazole rings, quinoline rings, isoquinoline rings, quinoxaline rings, acridine rings, quinazoline rings, sinnoline rings, and phthalazine rings; and condensed rings formed by the fusion of one or more monocyclic aromatic rings with one or more monocyclic non-aromatic rings, such as indan rings, fluorene rings, and tetraline rings. 11 Ar 12 Ar 13 and Ar 14 The aromatic rings represented are preferably, independently, aromatic carbon rings having 6 to 14 carbon atoms, which may have substituents, and more preferably, benzene rings.

[0186] In formula (1-1), Ar 11 Ar 12 Ar 13 and Ar 14When represents an aromatic ring having substituents, the number of substituents is not limited. Such substituents (hereinafter also referred to as "substituents S") are as described above, but examples include halogen atoms, alkyl groups, cycloalkyl groups, alkoxy groups, cycloalkyloxy groups, aryl groups, aryloxy groups, arylalkyl groups, arylalkoxy groups, monovalent heterocyclic groups, alkylidene groups, amino groups, silyl groups, acyl groups, acyloxy groups, carboxyl groups, sulfo groups, cyano groups, nitro groups, hydroxyl groups, mercapto groups, and oxo groups.

[0187] In formula (1-1), L 11 , L 12 and L 13 Each of these independently represents a divalent linking group. 11 , L 12 and L 13 The divalent linking group represented by is preferably a divalent group consisting of one or more skeletal atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, sulfur atoms, and silicon atoms (for example, 1 to 3000, 1 to 1000, 1 to 100, and 1 to 50 atoms). Examples of divalent linking groups include -SO2-, -CO-, -COO-, -O-, -S-, -O-C6H4-O- (where -C6H4- represents a phenylene group), -O-C6H4-C(CH3)2-C6H4-O-, and -COO-(CH2). m -OCO- (where m represents an integer from 1 to 20), -COO-H2C-HC(-OC(=O)-CH3)-CH2-OCO-, alkylene group, alkenylene group, alkynylene group, arylene group, heteroarylene group, -C(=O)-, -C(=O)-O-, -NR 0 -(Here, R 0 ) represents a hydrogen atom and an alkyl group having 1 to 3 carbon atoms. ) and -C(=O)-NR 0 - are listed.

[0188] L 11 , L 12 and L 13 The number of carbon atoms in the alkylene group is preferably 1 to 10, more preferably 1 to 6, and even more preferably 1 to 5 or 1 to 4. 11 , L12 and L 13 The number of carbon atoms in the alkenylene group is preferably 2 to 10, more preferably 2 to 6, and even more preferably 2 to 5. 11 , L 12 and L 13 The number of carbon atoms in the arylene group is preferably 6 to 20, more preferably 6 to 10. 11 , L 12 and L 13 The number of carbon atoms in the heteroarylene group is preferably 2 to 20, more preferably 3 to 10, 4 to 10, or 5 to 10.

[0189] L 11 , L 12 and L 13 The divalent linking group represented by preferably does not contain an aromatic ring. In one embodiment, L 11 The divalent linking group and L 13 The divalent linking groups represented by are the same as L 11 The divalent linking group and L 12 The divalent linking groups represented by are different from each other. In one preferred embodiment, L 11 and L 13 is -O-, L 12 is an alkylene group which may have substituents. In a more preferred embodiment, L 11 and L 13 is -O-, L 12 This is a dimethylmethylene group.

[0190] In equation (1-1), nc1 represents an integer greater than or equal to 0. In a preferred embodiment, nc1 represents an integer greater than or equal to 1. The upper limit of the integer represented by nc1 is not particularly limited, but could be, for example, 50, 40, 30, or 20.

[0191] In the tetravalent group represented by formula (1-1), L 11 and L 13 is -O- and L 12 It is preferable that is an alkylene group which may have substituents. Also, Ar 11 Ar 12 Ar13 and Ar 14 However, each is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents, L 11 and L 13 is -O- and L 12 It is more preferable that is an alkylene group which may have substituents. Also, Ar 11 Ar 12 Ar 13 and Ar 14 However, each is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents, L 11 and L 13 is -O-, L 12 It is even more preferable that the group is a dimethylmethylene group.

[0192] In formula (1-2), Ar 21 Ar 22 Ar 23 and Ar 24 Each of these independently represents an aromatic ring that may or may not have substituents. 21 Ar 22 Ar 23 and Ar 24 Examples of the aromatic ring represented by and the substituents that the aromatic ring may have are the same as those described above for the aromatic ring D and substituent S. Therefore, in one preferred embodiment, Ar 21 Ar 22 Ar 23 and Ar 24 Each of these is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents.

[0193] In formula (1-2), L 21 , L 22 and L 23 Each of these independently represents a divalent linking group. 21 , L 22 and L 23 An example of a divalent linking group represented by is L 11 , L 12 and L 13 This is similar to the divalent linking group represented by . Therefore, in a preferred embodiment, L 21 and L23 is -O-, L 22 is an alkylene group which may have substituents, and in a more preferred embodiment, L 21 and L 23 is -O-, L 22 This is a dimethylmethylene group.

[0194] In equation (1-2), nc2 represents an integer greater than or equal to 1. In a preferred embodiment, nc2 represents an integer greater than or equal to 2. The upper limit of the integer represented by nc2 is not particularly limited, but could be, for example, 60, 50, 40, or 30.

[0195] In the divalent group represented by formula (1-2), L 21 and L 23 is -O- and L 22 It is preferable that is an alkylene group which may have substituents. Also, Ar 21 Ar 22 Ar 23 and Ar 24 However, each is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents, L 21 and L 23 is -O- and L 22 It is more preferable that is an alkylene group which may have substituents. Also, Ar 21 Ar 22 Ar 23 and Ar 24 However, each is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents, L 21 and L 23 is -O-, L 12 It is even more preferable that the group is a dimethylmethylene group.

[0196] In the tetravalent group represented by formula (1-1) and the divalent group represented by formula (1-2), Ar 11 Ar 12 Ar 13 and Ar 14 However, each is independently an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents, and Ar 21Ar 22 Ar 23 and Ar 24 However, each is preferably an aromatic carbon ring having 6 to 14 carbon atoms, which may have substituents. 11 and L 13 is -O-, L 12 L is an alkylene group which may have substituents. 21 and L 23 is -O- and L 22 It is preferable that the alkylene group may have substituents.

[0197] The above structural unit (1) can be obtained, for example, by a known method for producing polyimide resins, typically by polymerizing a monomer composition containing a tetracarboxylic dianhydride and a diamine compound to imidize it, or by polymerizing a monomer composition containing a tetracarboxylic dianhydride and a diisocyanate compound to imidize it. It is acceptable for the polyimide resin to partially contain polyamic acid structures that may be formed during the imidization process.

[0198] Structural unit (1) may be obtained, for example, by reacting 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (a compound represented by formula (I) below; hereinafter also referred to as "BPADA") with 4,4'-[1,4-phenylenebis[(1-methylethylidene)-4,1-phenyleneoxy]]bisbenzeneamine (a compound represented by formula (II) below; hereinafter also referred to as "BPPAN"). That is, R1 in structural unit (1) is a skeleton derived from BPADA, and R2 is a skeleton derived from BPPAN.

[0199] [ka]

[0200] Furthermore, the polyimide resin may also contain structural units represented by the following formula (2) (hereinafter also referred to as "structural unit (2)"). Therefore, in one embodiment, the polyimide resin further contains structural units represented by the following formula (2). The number of structural units (2) contained in one molecule of polyimide resin is 0 or more and is not particularly limited, but can be 100 or less, 50 or less, or 30 or less.

[0201] [ka]

[0202] (In formula (2), R3 represents a tetravalent aliphatic group which may have substituents or a tetravalent aromatic group which may have substituents. R4 represents a divalent aliphatic group or a divalent aromatic group, which may have substituents. However, if R3 is the same as R1, R4 is different from R2, and if R4 is the same as R2, R3 is different from R1.

[0203] In formula (2), R3 represents an optionally substituted tetravalent aliphatic group or an optionally substituted tetravalent aromatic group.

[0204] The tetravalent aliphatic group represented by R3 is a tetravalent group comprising at least carbon atoms, and preferably consisting of one or more skeletal atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, sulfur atoms, and silicon atoms (e.g., 1 to 3000, 1 to 1000, 1 to 100, 1 to 50). The tetravalent aliphatic group represented by R3 is more preferably a tetravalent aliphatic group having 1 to 100 carbon atoms, and even more preferably 1 to 50 carbon atoms. When R3 represents a tetravalent aliphatic group with a substituent, the examples of the substituent are the same as the examples of substituent S.

[0205] The tetravalent aromatic group represented by R3 is preferably a tetravalent aromatic group having 6 to 100 carbon atoms, more preferably 6 to 50 carbon atoms. The aromatic group contains at least an aromatic ring. An example of an aromatic ring included in the aromatic group is Ar in formula (1-1). 11 Ar 12Ar 13 and Ar 14 The example of the aromatic ring represented is the same as that of the example

[0206] The tetravalent aromatic group represented by R3 can be a group obtained by removing two acid anhydride groups from a tetracarboxylic dianhydride having an aromatic group that may have substituents. Specific examples of tetracarboxylic dianhydrides having an aromatic group that may have substituents include BPADA, pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, and 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride.

[0207] In formula (2), R4 represents a divalent aliphatic group which may have substituents or a divalent aromatic group which may have substituents.

[0208] The divalent aliphatic group represented by R4 is a divalent group comprising at least carbon atoms, and preferably consisting of one or more skeleton atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, sulfur atoms, and silicon atoms (e.g., 1 to 3000, 1 to 1000, 1 to 100, 1 to 50). In formula (2), the divalent aliphatic group represented by R4 is more preferably a divalent aliphatic group having 1 to 100 carbon atoms, and even more preferably 1 to 50 carbon atoms. In formula (2), when R4 represents a substituted divalent aliphatic group, examples of the substituent are the same as examples of substituent S, for example, an alkyl group having 1 to 6 carbon atoms. Therefore, in one embodiment, R4 is a divalent aliphatic group which may have substituents, and one of the substituents is an alkyl group having 1 to 6 carbon atoms. In another embodiment, R4 is a divalent aliphatic group which may have substituents, and is a divalent group obtained by removing two amino groups from an isophorone diamine or dimer amine.

[0209] When R4 represents a divalent aliphatic group which may have substituents, it may be a group obtained by removing two amino groups from a diamine compound having a linear aliphatic group which may have substituents, selected from 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-hexanediamine, 1,7-heptanediamine, 1,8-octanediamine, 1,9-nonanediamine, 1,10-decanediamine, 1,11-undecanediamine, and 1,12-dodecanediamine.

[0210] When R4 represents a divalent aliphatic group which may have substituents, it may be a group obtained by removing two amino groups from a diamine compound having a branched aliphatic group which may have substituents, selected from 1,2-diaminopropane, 1,2-diamino-2-methylpropane, 1,3-diamino-2-methylpropane, 1,3-diamino-2,2-dimethylpropane, 1,3-diaminopentane, and 1,5-diamino-2-methylpentane.

[0211] When R4 represents a divalent aliphatic group which may have substituents, 5-amino-1,3,3-trimethylcyclohexanemethylamine (isophorone diamine), 1,4-diaminocyclohexane, 1,3-diaminocyclohexane, 1,4-cyclohexanebis(methylamine), 1,3-cyclohexanebis(methylamine), 4,4'-diaminodicyclohexylmethane, bis(4-amino-3-methylcyclohexyl)methane, 3(4),8(9)-bis(aminomethyl)tricyclo[5.2.1.0 2,6 The group may be a diamine compound having an aliphatic group which may have substituents, selected from decane, 2,5(6)-bis(aminomethyl)bicyclo[2.2.1]heptane, 1,3-diaminoadamantane, 3,3'-diamino-1,1'-biadamantyl, 1,6-diaminoadamantane, and dimer amine, from which two amino groups have been removed. These diamine compounds are characterized in that their aliphatic group contains an alicyclic carbocyclic ring.

[0212] The divalent aromatic group represented by R4 is preferably a divalent aromatic group having 6 to 100 carbon atoms, more preferably 6 to 50 carbon atoms. The aromatic group includes at least an aromatic ring. Examples of aromatic rings included in the aromatic group are the same as those of aromatic ring D. In formula (2), when R4 represents a divalent aromatic group having a substituent, examples of the substituent are the same as those of substituent S.

[0213] If R4 represents a divalent aromatic group which may have substituents, it may be a group obtained by removing two amino groups from a diamine compound having an aromatic group which may have substituents, selected from 4,4'-diaminodiphenyl ether, 1,4-phenylenediamine, and 2,2-bis[4-(4-aminophenoxy)phenyl]propane.

[0214] However, if R3 is the same as R1, R4 is different from R2, and if R4 is the same as R2, R3 is different from R1. In one embodiment, R3 is the same as R1.

[0215] The structural unit (2) described above can be obtained, for example, by a known method for producing polyimide resins. Structural unit (2) can be obtained, for example, by reacting BPADA with isophorone diamine or dimer amine. That is, in such structural unit (2), R3 is a skeleton derived from BPADA, and R4 is a skeleton derived from isophorone diamine or dimer amine. When R3 is the same as R1, R3 and R1 are skeletons derived from BPADA.

[0216] The terminal structure of the polyimide resin is not particularly limited. For example, the terminal structure of the polyimide resin may be an acid anhydride group, a carboxyl group, or an amino group derived from its raw material compound (e.g., an acid such as BPADA, or an amine compound such as BPPAN). If the raw material compound further contains maleic anhydride, the terminal structure of the polyimide resin may be a maleimide group.

[0217] The glass transition temperature Tg (°C) of polyimide resin is preferably 140°C or higher, more preferably 145°C or higher, and even more preferably 150°C or higher, 160°C or higher, or 170°C or higher. There is no particular upper limit, but it can be 300°C or lower. The glass transition temperature Tg (°C) of polyimide resin can be measured by thermomechanical analysis (TMA).

[0218] The content of structural unit (1) in the polyimide resin is preferably 5% by mass or more, more preferably 10% by mass or more, and even more preferably 20% by mass or more, 30% by mass or more, or 40% by mass or more. The upper limit of this content can be, for example, 98% by mass or less, 95% by mass or less, 90% by mass or less, or 85% by mass or less. Here, the content of structural unit (1) (mass percentage) can be calculated from the proportion of the amount (parts by mass) of each material used in the synthesis of the polyimide resin. Alternatively, the molecular weight of the polyimide resin and the formula weight of structural unit (1) may be specified, and the content of structural unit (1) may be calculated as the ratio of the formula weight of structural unit (1) to the molecular weight. When the polyimide resin is a polymer, it is preferable that the content of structural unit (1) estimated from the degree of polymerization falls within the above range.

[0219] The content of structural unit (2) in the polyimide resin may be 0% by mass (i.e., no structural unit (2)), and there is no upper limit as long as it does not hinder the effects of the present invention. If the polyimide resin is a resin that further contains structural unit (2), the content of structural unit (2) in the polyimide resin may be, for example, 1% by mass or more, 5% by mass or more, 10% by mass or more, 20% by mass or more, or 30% by mass or more, 95% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, or 60% by mass or less. Here, the content of structural unit (2) is calculated in the same way as the content of structural unit (1).

[0220] The weight-average molecular weight (Mw) of the polyimide resin is 1,000 or more, preferably 1,000 to 10,000, and more preferably 1,000 to 5,000. The weight-average molecular weight of the polyimide resin is the weight-average molecular weight in terms of polystyrene, measured by gel permeation chromatography (GPC).

[0221] Examples of phenoxy resins include phenoxy resins having one or more skeletons selected from the group consisting of bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenolacetophenone skeleton, novolac skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, naphthalene skeleton, anthracene skeleton, adamantane skeleton, terpene skeleton, and trimethylcyclohexane skeleton. The terminal end of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. Specific examples of phenoxy resins include "1256" and "4250" (both phenoxy resins containing a bisphenol A skeleton) manufactured by Mitsubishi Chemical Corporation; "YX8100" (phenoxy resin containing a bisphenol S skeleton) manufactured by Mitsubishi Chemical Corporation; "YX6954" (phenoxy resin containing a bisphenol acetophenone skeleton) manufactured by Mitsubishi Chemical Corporation; "FX280" and "FX293" manufactured by Nippon Steel Chemical & Material Co., Ltd.; and "YL7500BH30", "YX6954BH30", "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7482", "YX7891T30", and "YL7891BH30" manufactured by Mitsubishi Chemical Corporation. Phenoxy resins may be used individually or in combination of two or more types.

[0222] Examples of polystyrene resins include styrene homopolymers, copolymers of styrene and diene compounds (butadiene, isoprene, etc.), and their hydrogenated products. Specific examples of polystyrene resins include hydrogenated styrene thermoplastic resins "H1041", "ToughTec H1043", "ToughTec P2000", and "ToughTec MP10" (manufactured by Asahi Kasei Corporation); epoxidized styrene-butadiene thermoplastic resins "Epofriend AT501" and "CT310" (manufactured by Daicel Corporation); modified polystyrene resin with hydroxyl groups "Septon HG252" (manufactured by Kuraray Co., Ltd.); modified polystyrene resin with carboxyl groups "ToughTec N503M", modified polystyrene resin with amino groups "ToughTec N501", modified polystyrene resin with acid anhydride groups "ToughTec M1913" (manufactured by Asahi Kasei Corporation); unmodified polystyrene resin "Septon S8104" (manufactured by Kuraray Co., Ltd.); and styrene-ethylene / butylene-styrene block copolymers "FG1924" (manufactured by Kraton) and "EF-40" (manufactured by Cray Valley).

[0223] Examples of polyvinyl acetal resins include polyvinyl formal resin and polyvinyl butyral resin, with polyvinyl butyral resin being preferred. Specific examples of polyvinyl acetal resins include S-Rec BH series, BX series (e.g., BX-5Z), KS series (e.g., KS-1), BL series, BM series, etc., manufactured by Sekisui Chemical Co., Ltd. Polyvinyl acetal resins may be used individually or in combination of two or more types.

[0224] Examples of polyolefin resins include ethylene-based copolymer resins such as low-density polyethylene, ultra-low-density polyethylene, high-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, and ethylene-methyl acrylate copolymer; and polyolefin polymers such as polypropylene and ethylene-propylene block copolymer. Polyolefin resins may be used individually or in combination of two or more types.

[0225] Examples of polybutadiene resins include hydrogenated polybutadiene skeleton-containing resins, hydroxyl group-containing polybutadiene resins, phenolic hydroxyl group-containing polybutadiene resins, carboxyl group-containing polybutadiene resins, acid anhydride group-containing polybutadiene resins, epoxy group-containing polybutadiene resins, isocyanate group-containing polybutadiene resins, urethane group-containing polybutadiene resins, and polyphenylene ether-polybutadiene resins. Polybutadiene resins may be used individually or in combination of two or more types.

[0226] Specific examples of polyamide-imide resins include "Viromax HR11NN" and "Viromax HR16NN" manufactured by Toyobo Co., Ltd. Other specific examples of polyamide-imide resins include modified polyamide-imides such as "KS9100" and "KS9300" (polysiloxane skeleton-containing polyamide-imide) manufactured by Resonaq Corporation. Polyamide-imide resins may be used individually or in combination of two or more types.

[0227] Specific examples of polysulfone resins include Solvay Advanced Polymers' polysulfones "P1700" and "P3500." Polysulfone resins may be used individually or in combination of two or more types.

[0228] Specific examples of polyethersulfone resins include "PES5003P" manufactured by Sumitomo Chemical Co., Ltd. Specific examples of polyphenylene ether resins include "NORYL SA90" manufactured by SABIC Corporation. Specific examples of polyetherimide resins include "Ultem" manufactured by GE Corporation.

[0229] Examples of polycarbonate resins include hydroxyl group-containing carbonate resins, phenolic hydroxyl group-containing carbonate resins, carboxyl group-containing carbonate resins, acid anhydride group-containing carbonate resins, isocyanate group-containing carbonate resins, and urethane group-containing carbonate resins. Specific examples of polycarbonate resins include "FPC0220" from Mitsubishi Gas Chemical Co., Ltd., "T6002" and "T6001" (polycarbonate diols) from Asahi Kasei Corporation, and "C-1090," "C-2090," and "C-3090" (polycarbonate diols) from Kuraray Co., Ltd. Polycarbonate resins may be used individually or in combination of two or more types.

[0230] Specific examples of polyether ether ketone resins include "Sumiproi K" manufactured by Sumitomo Chemical Co., Ltd.

[0231] Examples of polyester resins include polyethylene terephthalate resin, polyethylene naphthalate resin, polybutylene terephthalate resin, polybutylene naphthalate resin, polytrimethylene terephthalate resin, polytrimethylene naphthalate resin, and polycyclohexanedimethyl terephthalate resin. Polyester resins may be used individually or in combination of two or more types.

[0232] From the viewpoint of significantly obtaining the effects of the present invention in combination with components (A) to (C), component (D) preferably contains an aromatic ring. The aromatic ring may be an aromatic carbocyclic ring or an aromatic heterocyclic ring. Furthermore, the aromatic ring may be a monocyclic aromatic ring, a condensed aromatic ring formed by the condensation of two or more monocyclic aromatic rings, or a condensed aromatic ring formed by the condensation of one or more monocyclic aromatic rings with one or more monocyclic non-aromatic rings. Among these, the aromatic ring contained in component (D) is preferably an aromatic carbocyclic ring. The number of carbon atoms in the aromatic carbocyclic ring is preferably 6 to 10.

[0233] (D) If component contains aromatic rings, the number of aromatic rings per molecule is, for example, one or more, preferably two or more. If component (D) contains two or more aromatic rings, these two or more aromatic rings may be the same or different.

[0234] From the viewpoint of obtaining more pronounced effects of the present invention in combination with components (A) to (C), it is more preferable that component (D) contains an aromatic ring, and that all of the aromatic rings are aromatic carbocyclic rings. That is, in a more preferred embodiment, component (D) contains an aromatic carbocyclic ring but does not contain an aromatic heterocyclic ring. In such an embodiment, component (D) may contain a non-aromatic ring or may not contain a non-aromatic ring. The non-aromatic ring may be a non-aromatic carbocyclic ring having only carbon atoms as ring constituent atoms, or it may be a non-aromatic heterocyclic ring having heteroatoms such as oxygen atoms, nitrogen atoms, sulfur atoms, etc., in addition to carbon atoms as ring constituent atoms.

[0235] When the resin composition contains a thermoplastic resin other than polyimide resin, the weight-average molecular weight (Mw) of the thermoplastic resin other than polyimide resin is preferably 5,000 or more, more preferably 8,000 or more, even more preferably 10,000 or more, 15,000 or more, or 20,000 or more, preferably 200,000 or less, more preferably 150,000 or less, or 100,000 or less, and even more preferably 80,000 or less, or 60,000 or less. The weight-average molecular weight of the thermoplastic resin other than polyimide resin is the weight-average molecular weight in terms of polystyrene, measured by gel permeation chromatography (GPC).

[0236] If the resin composition of the present invention contains component (D), the content of component (D) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, 8% by mass or less, 6% by mass or less, or 5% by mass or less, when the total amount of resin components in the resin composition is 100% by mass.

[0237] If the resin composition of the present invention contains component (D), the content of component (D) is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, even more preferably 0.3% by mass or more, 0.4% by mass or more, or 0.5% by mass or more, and preferably 5% by mass or less, more preferably 4% by mass or less, even more preferably 3% by mass or less, or 2% by mass or less, when the nonvolatile components in the resin composition are taken as 100% by mass.

[0238] <(E) Curing accelerator> The resin composition of the present invention may contain a curing accelerator as component (E). The curing accelerator as component (E) does not include any of the components (A) to (D) described above. Component (E) may be used alone or in combination of two or more types.

[0239] Examples of component (E) include phosphorus-based curing accelerators, urea-based curing accelerators, guanidine-based curing accelerators, imidazole-based curing accelerators, metal-based curing accelerators, amine-based curing accelerators, peroxide-based curing accelerators, azo-based curing accelerators, and the like.

[0240] Examples of phosphorus-based curing accelerators include aliphatic phosphonium salts such as tetrabutylphosphonium bromide, tetrabutylphosphonium chloride, tetrabutylphosphonium acetate, tetrabutylphosphonium decanoate, tetrabutylphosphonium laurate, bis(tetrabutylphosphonium) pyromelitate, tetrabutylphosphonium hydrogen hexahydrophthalate, tetrabutylphosphonium 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenolate, and di-tert-butyldimethylphosphonium tetraphenylborate; methyltriphenylphosphonium bromide, ethyltriphenylphosphonium bromide, propyltriphenylphosphonium bromide, butyltriphenylphosphonium bromide, benzyltriphenylphosphonium chloride, tetraphenylphosphonium bromide, p-tolyltriphenylphosphonium tetra-p-tolylborate, and tetraphenylphosphonium bromide. Aromatic phosphonium salts such as tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, triphenylethylphosphonium tetraphenylborate, tris(3-methylphenyl)ethylphosphonium tetraphenylborate, tris(2-methoxyphenyl)ethylphosphonium tetraphenylborate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, and butyltriphenylphosphonium thiocyanate; aromatic phosphine-borane complexes such as triphenylphosphine-triphenylborane; aromatic phosphine-quinone addition products such as triphenylphosphine-p-benzoquinone addition products; aliphatic phosphines such as tributylphosphine, tri-tert-butylphosphine, trioctylphosphine, di-tert-butyl(2-butenyl)phosphine, di-tert-butyl(3-methyl-2-butenyl)phosphine, and tricyclohexylphosphine;Dibutylphenylphosphine, di-tert-butylphenylphosphine, methyldiphenylphosphine, ethyldiphenylphosphine, butyldiphenylphosphine, diphenylcyclohexylphosphine, triphenylphosphine, tri-o-tolylphosphine, tri-m-tolylphosphine, tri-p-tolylphosphine, tris(4-ethylphenyl)phosphine, tris(4-propylphenyl)phosphine, tris(4-isopropylphenyl)phosphine, tris(4-butylphenyl)phosphine, tris(4-tert-butylphenyl)phosphine, tris(2,4-dimethylphenyl)phosphine, tris(2,5-dimethylphenyl)phosphine, tris(2,6-dimethylphenyl)phosphine Examples include aromatic phosphines such as tris(3,5-dimethylphenyl)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tris(2,6-dimethyl-4-ethoxyphenyl)phosphine, tris(2-methoxyphenyl)phosphine, tris(4-methoxyphenyl)phosphine, tris(4-ethoxyphenyl)phosphine, tris(4-tert-butoxyphenyl)phosphine, diphenyl-2-pyridylphosphine, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane, 1,4-bis(diphenylphosphino)butane, 1,2-bis(diphenylphosphino)acetylene, and 2,2'-bis(diphenylphosphino)diphenyl ether.

[0241] Examples of urea-based curing accelerators include aliphatic dimethylureas such as 1,1-dimethylurea, 1,1,3-trimethylurea, 3-ethyl-1,1-dimethylurea, 3-cyclohexyl-1,1-dimethylurea, and 3-cyclooctyl-1,1-dimethylurea; 3-phenyl-1,1-dimethylurea, 3-(4-chlorophenyl)-1,1-dimethylurea, 3-(3,4-dichlorophenyl)-1,1-dimethylurea, 3-(3-chloro-4-methylphenyl)-1,1-dimethylurea, 3-(2-methylphenyl)-1,1-dimethylurea, 3-(4-methylphenyl)-1,1-dimethylurea, and 3-(3,4-dimethylphenyl)-1,1-dimethylurea. Aromatic dimethylureas such as toluenebisdimethylurea, 3-(4-isopropylphenyl)-1,1-dimethylurea, 3-(4-methoxyphenyl)-1,1-dimethylurea, 3-(4-nitrophenyl)-1,1-dimethylurea, 3-[4-(4-methoxyphenoxy)phenyl]-1,1-dimethylurea, 3-[4-(4-chlorophenoxy)phenyl]-1,1-dimethylurea, 3-[3-(trifluoromethyl)phenyl]-1,1-dimethylurea, N,N-(1,4-phenylene)bis(N',N'-dimethylurea), and N,N-(4-methyl-1,3-phenylene)bis(N',N'-dimethylurea) [toluenebisdimethylurea] are examples.

[0242] Examples of guanidine-based curing accelerators include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]deca-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0]deca-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, and 1-(o-tolyl)biguanide.

[0243] Examples of imidazole-based curing accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2- Phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl -(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct Examples include imidazole compounds such as 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, and 2-phenylimidazoline, as well as adducts of imidazole compounds with epoxy resins. Commercially available imidazole curing accelerators may be used, such as "1B2PZ", "2MZA-PW", "2PHZ-PW", and "C11Z-A" from Shikoku Chemicals, Inc., and "P200-H50" from Mitsubishi Chemical Corporation.

[0244] Examples of metal-based hardening accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organocobalt complexes such as cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, organocopper complexes such as copper(II) acetylacetonate, organozinc complexes such as zinc(II) acetylacetonate, organoiron complexes such as iron(III) acetylacetonate, organonickel complexes such as nickel(II) acetylacetonate, and organomanganese complexes such as manganese(II) acetylacetonate. Examples of organometallic salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

[0245] Examples of amine-based curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, and 1,8-diazabicyclo(5,4,0)-undecene. Commercially available amine-based curing accelerators may also be used, such as "MY-25" manufactured by Ajinomoto Fine Techno Co., Ltd.

[0246] Examples of peroxide-based curing accelerators (radical polymerization initiators) include hydroperoxide compounds such as 1,1,3,3-tetramethylbutyl hydroperoxide; dialkylperoxide compounds such as tert-butylcumyl peroxide, di-tert-butyl peroxide, di-tert-hexyl peroxide, di-tert-amyl peroxide, dicumyl peroxide, 1,4-bis(1-tert-butylperoxy-1-methylethyl)benzene, and 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexane; dilauroyl peroxide, didecanoyl peroxide, dicyclohexyl peroxydicarbonate, bis(4-tert-butylcyclohexyl)peroxydicarbonate, etc. Examples include diacyl peroxide compounds; tert-butyl peroxyacetate, tert-butyl peroxybenzoate, tert-butyl peroxyisopropyl monocarbonate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxyneodecanoate, tert-hexyl peroxyisopropyl monocarbonate, tert-butyl peroxylaurate, (1,1-dimethylpropyl)2-ethyl perhexanoate, tert-butyl 2-ethyl perhexanoate, tert-butyl 3,5,5-trimethyl perhexanoate, tert-butyl peroxy-2-ethylhexyl monocarbonate, tert-butyl peroxymaleic acid, and other peroxyester compounds. Commercial peroxide-based curing accelerators may be used, such as NOF Corporation's "Perbutyl C," "Perbutyl A," "Perbutyl P," "Perbutyl L," "Perbutyl O," "Perbutyl ND," "Perbutyl Z," "Perbutyl I," "Permil P," "Permil D," "Perhexyl D," "Perhexyl A," "Perhexyl I," "Perhexyl Z," "Perhexyl ND," "Perhexyl O," and "Perhexyl PV"; and Arkema Yoshitomi Co., Ltd.'s "Luperox DTA."

[0247] Examples of azo-based curing accelerators (radical polymerization initiators) include azonitrile compounds such as 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobisisobutyronitrile, 2,2'-azobis(2-methylbutyronitrile), 1,1'-azobis(cyclohexane-1-carbonitride), 1-[(1-cyano-1-methylethyl)azo]formamide, and 2-phenylazo-4-methoxy-2,4-dimethylvaleronitrile; 2,2'-azobis[2-methyl-N-[1,1-bis(hydroxymethyl)-2-hydroxyethyl]propionamide], and 2,2'-azobis[2-methyl-N-[1,1-bis(hydroxymethyl) Examples include azoamide compounds such as roxymethyl)ethyl]propionamide], 2,2'-azobis[2-methyl-N-[2-(1-hydroxybutyl)]-propionamide], 2,2'-azobis[2-methyl-N-(2-hydroxyethyl)-propionamide], 2,2'-azobis(2-methylpropionamide) dihydrate, 2,2'-azobis[N-(2-propenyl)-2-methylpropionamide], 2,2'-azobis(N-butyl-2-methylpropionamide), and 2,2'-azobis(N-cyclohexyl-2-methylpropionamide); and alkylazo compounds such as 2,2'-azobis(2,4,4-trimethylpentane) and 2,2'-azobis(2-methylpropane); and so on.

[0248] If the resin composition of the present invention contains component (E), the content of component (E) is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, even more preferably 0.2% by mass or more, 0.4% by mass or more, or 0.5% by mass or more, and preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 2% by mass or less, or 1.5% by mass or less, when the total amount of resin components in the resin composition is 100% by mass.

[0249] If the resin composition of the present invention contains component (E), the content of component (E) is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, even more preferably 0.05% by mass or more, 0.06% by mass or more, 0.08% by mass or more, or 0.1% by mass or more, when the nonvolatile components in the resin composition are taken as 100% by mass, and preferably 3% by mass or less, more preferably 2% by mass or less, even more preferably 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, or 0.5% by mass or less.

[0250] <(F) Resins containing ethylenic double bonds> The resin composition of the present invention may include a resin containing an ethylenically double bond as component (F). The resin containing an ethylenically double bond as component (F) does not include those corresponding to components (A) to (E) described above. Component (F) may be used alone or in combination of two or more types.

[0251] Component (F) preferably has an ethylenic double bond as a radically polymerizable unsaturated group. Therefore, component (F) is preferably a radically polymerizable compound having a radically polymerizable unsaturated group.

[0252] Examples of radically polymerizable unsaturated groups include vinyl groups, allyl groups, vinylphenyl groups, acryloyl groups, methacryloyl groups, fumaroyl groups, and maleoyl groups. The number of radically polymerizable unsaturated groups contained in component (F) is usually one or more, preferably two or more. If component (F) contains two or more radically polymerizable unsaturated groups, these two or more radically polymerizable unsaturated groups may be the same or different.

[0253] Examples of component (F) include allyl radical polymerizable compounds, (meth)acrylic radical polymerizable compounds, and styrene radical polymerizable compounds.

[0254] Allyl radical polymerizable compounds are, for example, compounds having one or more, preferably two or more, allyl groups. Examples of allyl-based radical polymerizable compounds include aromatic carboxylic acid allyl ester compounds such as diallyl diphenate, triallyl trimellitate, diallyl phthalate, diallyl isophthalate, diallyl terephthalate, diallyl 2,6-naphthalenedicarboxylic acid, and diallyl 2,3-naphthalenecarboxylic acid; isocyanuric acid allyl ester compounds such as 1,3,5-trialyl isocyanurate and 1,3-diallyl-5-glycidyl isocyanurate; epoxy-containing aromatic allyl compounds such as 2,2-bis[3-allyl-4-(glycidyloxy)phenyl]propane; benzoxazine-containing aromatic allyl compounds such as bis[3-allyl-4-(3,4-dihydro-2H-1,3-benzoxazine-3-yl)phenyl]methane; ether-containing aromatic allyl compounds such as 1,3,5-trialyl etherbenzene; allyl silane compounds such as diallyldiphenylsilane; and resins containing multiple benzene rings and multiple allyl groups. Examples of commercially available allyl radical polymerizable compounds include "TAIC" (1,3,5-trialyl isocyanurate) from Nippon Chemical Industries, Ltd., "DAD" (diallyl diphenate) from Nichishoku Techno Fine Chemicals Co., Ltd., "TRIAM-705" (trialyl trimellitate) from Wako Pure Chemical Industries, Ltd., "DAND" (2,3-diallyl naphthalenecarboxylate) from Nippon Distillation Industry Co., Ltd., and "ALP-d" (bis[3-ali) from Shikoku Chemicals, Ltd. Examples include ru-4-(3,4-dihydro-2H-1,3-benzoxazine-3-yl)phenyl]methane), "RE-810NM" (2,2-bis[3-allyl-4-(glycidyloxy)phenyl]propane) manufactured by Nippon Kayaku Co., Ltd., "DA-MGIC" (1,3-diallyl-5-glycidyl isocyanurate) manufactured by Shikoku Chemicals Co., Ltd., and "NE-V-1100-70T" (a resin containing multiple benzene rings and allyl groups) manufactured by DIC Corporation.

[0255] (Meth)acrylic radical polymerizable compounds are, for example, compounds having one or more, preferably two or more, acryloyl groups and / or methacryloyl groups. Examples of (meth)acrylic radical polymerizable compounds include cyclohexane-1,4-dimethanol di(meth)acrylate, cyclohexane-1,3-dimethanol di(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,8-octanediol di(meth)acrylate, and 1,9-non- Low molecular weight (molecular weight less than 1000) aliphatic (meth)acrylic acid ester compounds such as dioxanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, trimethylolethane tri(meth)acrylate, glycerin tri(meth)acrylate, pentaerythritol tetra(meth)acrylate; dioxaneglycol di(meth)acrylate, 3,6-dioxa-1,8-octanediol di(meth)acrylate; Examples include low molecular weight (molecular weight less than 1000) ether-containing (meth)acrylic acid ester compounds such as (meth)acrylate, 3,6,9-trioxaundecane-1,11-diol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, 9,9-bis[4-(2-acryloyloxyethoxy)phenyl]fluorene, ethoxylated bisphenol A di(meth)acrylate, and propoxylated bisphenol A di(meth)acrylate; low molecular weight (molecular weight less than 1000) isocyanurate-containing (meth)acrylic acid ester compounds such as tris(3-hydroxypropyl) isocyanurate tri(meth)acrylate, tris(2-hydroxyethyl) isocyanurate tri(meth)acrylate, and ethoxylated isocyanurate tri(meth)acrylate; and high molecular weight (molecular weight 1000 or more) acrylic acid ester compounds such as (meth)acrylic-modified polyphenylene ether resins.Examples of commercially available (meth)acrylic radical polymerizable compounds include "A-DOG" (dioxane glycol diacrylate) from Shin Nakamura Chemical Industry Co., Ltd., "DCP-A" (tricyclodecane dimethanol diacrylate) and "DCP" (tricyclodecane dimethanol dimethacrylate) from Kyoeisha Chemical Co., Ltd., "KAYARAD R-684" (tricyclodecane dimethanol diacrylate) and "KAYARAD R-604" (dioxane glycol diacrylate) from Nippon Kayaku Co., Ltd., and "SA9000" and "SA9000-111" (methacrylic modified polyphenylene ether) from SABIC Innovative Plastics Co., Ltd.

[0256] Styrene-based radical polymerizable compounds are, for example, compounds having one or more, preferably two or more vinyl groups directly bonded to an aromatic carbon atom. Examples of styrene-based radical polymerizable compounds include low molecular weight (molecular weight less than 1000) styrene compounds such as divinylbenzene, 2,4-divinyltoluene, 2,6-divinylnaphthalene, 1,4-divinylnaphthalene, 4,4'-divinylbiphenyl, 1,2-bis(4-vinylphenyl)ethane, 2,2-bis(4-vinylphenyl)propane, and bis(4-vinylphenyl) ether; and high molecular weight (molecular weight 1000 or more) styrene compounds such as vinylbenzyl-modified polyphenylene ether resins and styrene-divinylbenzene copolymers. Examples of commercially available styrene-based radical polymerizable compounds include "ODV-XET(X03)", "ODV-XET(X04)", and "ODV-XET(X05)" (styrene-divinylbenzene copolymer) from Nippon Steel Chemical & Material Co., Ltd., and "OPE-2St 1200" and "OPE-2St 2200" (vinylbenzyl-modified polyphenylene ether resin) from Mitsubishi Gas Chemical Co., Ltd.

[0257] The ethylenically unsaturated bond equivalent of component (F) is preferably 20 g / eq. to 3,000 g / eq., more preferably 50 g / eq. to 2,500 g / eq., even more preferably 70 g / eq. to 2,000 g / eq., and particularly preferably 90 g / eq. to 1,500 g / eq. The ethylenically unsaturated bond equivalent represents the mass of the radical polymerizable compound per equivalent of ethylenically unsaturated bonds.

[0258] The weight-average molecular weight of component (F) is preferably 40,000 or less, more preferably 10,000 or less, even more preferably 5,000 or less, and particularly preferably 3,000 or less. The lower limit is not particularly limited, but may be, for example, 150 or more. The weight-average molecular weight can be measured as a polystyrene equivalent value by gel permeation chromatography (GPC).

[0259] When the resin composition of the present invention contains component (F), from the viewpoint of more favorably achieving the effects of the present invention in combination with components (A) to (C), the content of component (F) is preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably 4% by mass or less or 3% by mass or less, when the total amount of resin components in the resin composition is 100% by mass, and the lower limit can be, for example, 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more.

[0260] When the resin composition of the present invention contains component (F), from the viewpoint of more favorably achieving the effects of the present invention in combination with components (A) to (C), the content of component (F) is preferably 5% by mass or less, more preferably 3% by mass or less, and even more preferably 2% by mass or less or 1% by mass or less, when the nonvolatile components in the resin composition are taken as 100% by mass, and the lower limit can be, for example, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more.

[0261] <(G) Epoxy resin> The resin composition of the present invention may contain an epoxy resin as component (G). The epoxy resin as component (G) does not include any of the components (A) to (F) described above. Component (G) may be used alone or in combination of two or more types.

[0262] The type of component (G) is not particularly limited, as long as it has one or more (preferably two or more) epoxy groups in one molecule. Examples of epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, fluorene skeleton type epoxy resin, dicyclopentadiene type epoxy resin, anthracene type epoxy resin, linear aliphatic epoxy resin, epoxy resin having a butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiroring-containing epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy resin, halogenated epoxy resin, and the like.

[0263] Component (G) can be classified into an epoxy resin that is liquid at 20°C (hereinafter referred to as "liquid epoxy resin") and an epoxy resin that is solid at 20°C (hereinafter referred to as "solid epoxy resin"). The resin composition of the present invention may contain only a liquid epoxy resin as component (G), only a solid epoxy resin, or a combination of a liquid epoxy resin and a solid epoxy resin. When a combination of a liquid epoxy resin and a solid epoxy resin is included, the mixing ratio (liquid:solid) may be in the range of 20:1 to 1:20 by mass ratio (preferably 10:1 to 1:10, more preferably 3:1 to 1:3).

[0264] The epoxy group equivalent of component (G) is preferably 50 g / eq. to 2000 g / eq., more preferably 60 g / eq. to 1000 g / eq., and even more preferably 80 g / eq. to 500 g / eq. The epoxy group equivalent is the mass of epoxy resin containing one equivalent of epoxy groups and can be measured according to JIS K7236.

[0265] The weight-average molecular weight (Mw) of component (G) is preferably 100 to 5,000, more preferably 250 to 3,000, and even more preferably 400 to 1,500. The Mw of the epoxy resin can be measured as a polystyrene equivalent value by the GPC method.

[0266] In combination with components (A) to (C), from the viewpoint of realizing a resin composition that yields a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (G) is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, 8% by mass or less, 6% by mass or less, or 5% by mass or less, when the total resin components in the resin composition are taken as 100% by mass. The lower limit of the content of component (G) is not particularly limited and may be 0% by mass. By limiting the content of component (G) to such a range, the effects of the present invention can be obtained more significantly, and it is also preferable because it is easier to realize a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0267] In combination with components (A) to (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (G) is preferably 10% by mass or less, more preferably 8% by mass or less, even more preferably 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, or 2% by mass or less, when the non-volatile components in the resin composition are taken as 100% by mass. The lower limit of the content of component (G) is not particularly limited and may be 0% by mass. By limiting the content of component (G) to such a range, the effects of the present invention can be obtained more significantly, and it is also preferable because it is easier to realize a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0268] <(H) Epoxy resin hardener> The resin composition of the present invention may contain an epoxy resin curing agent as component (H). The epoxy resin curing agent as component (H) does not include any of the components (A) to (G) described above. Component (H) may be used alone or in combination of two or more types.

[0269] Component (H) is not particularly limited as long as it has the function of curing component (G), and examples include phenolic curing agents, naphthol curing agents, active ester curing agents, acid anhydride curing agents, benzoxazine curing agents, cyanate ester curing agents, carbodiimide curing agents, and amine curing agents. Specific examples of phenolic and naphthol curing agents include, for example, "MEH-7700", "MEH-7810", "MEH-7851", and "MEH-8000H" from Meiwa Kasei Co., Ltd.; "NHN", "CBN", and "GPH" from Nippon Kayaku Co., Ltd.; and "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN-495V", and "SN-37" from Nippon Steel Chemical & Material Co., Ltd. Examples include "5", "SN-395", "TD-2090", "TD-2090-60M", "LA-7052", "LA-7054", "LA-1356", "LA-3018", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA-1163", "KA-1165" from DIC Corporation, and "GDP-6115L", "GDP-6115H", "ELPC75" from Gun-ei Chemical Co., Ltd.Suitable examples of active ester curing agents include active ester compounds containing a dicyclopentadiene-type diphenol structure, active ester compounds containing a naphthalene structure, active ester compounds containing an acetylated phenol novolac, and active ester compounds containing a benzoylated phenol novolac. Commercially available examples include active ester resins containing a dicyclopentadiene-type diphenol structure such as "EXB-9451," "EXB-9460," "EXB-9460S," "HPC-8000-65T," and "HPC-8000L-65TM" (manufactured by DIC Corporation); and active ester resins containing a naphthalene structure such as "EXB-8100L-65T" and "EX Examples include "B-8150-60T", "EXB-8150-62T", "EXB-9416-70BK", "HPC-8150-62T", and "HP-C-8151-62T" (manufactured by DIC Corporation); "EXB9401" (manufactured by DIC Corporation) as a phosphorus-containing active ester resin; "DC808" (manufactured by Mitsubishi Chemical Corporation) as an active ester resin that is an acetylated phenol novolac; "YLH1026", "YLH1030", and "YLH1048" (manufactured by Mitsubishi Chemical Corporation) as active ester resins that are benzoylated phenol novolacs; and "PC1300-02-65MA" (manufactured by Air Water Corporation) as an active ester resin containing a styryl group and a naphthalene structure. Examples of acid anhydride-based curing agents include curing agents having one or more acid anhydride groups in one molecule, and commercially available examples include "MH-700" manufactured by Shin Nippon Rika Co., Ltd. Specific examples of benzoxazine-based curing agents include "JBZ-OD100" (benzoxazine ring equivalent 218), "JBZ-OP100D" (benzoxazine ring equivalent 218), and "ODA-BOZ" (benzoxazine ring equivalent 218) manufactured by JFE Chemical Corporation; "Pd" (benzoxazine ring equivalent 217) and "Fa" (benzoxazine ring equivalent 217) manufactured by Shikoku Chemicals Co., Ltd.; and "HFB2006M" (benzoxazine ring equivalent 432) manufactured by Showa Polymer Co., Ltd.Specific examples of cyanate ester curing agents include "PT30" and "PT60" (phenol novolac type polyfunctional cyanate ester resin), "ULL-950S" (polyfunctional cyanate ester resin), "BA230", and "BA230S75" (prepolymers in which part or all of bisphenol A dicyanate is triazined and trimerized), all manufactured by Lonza Japan. Specific examples of carbodiimide curing agents include Carbodilite® V-03 (carbodiimide group equivalent: 216 g / eq.), V-05 (carbodiimide group equivalent: 262 g / eq.), V-07 (carbodiimide group equivalent: 200 g / eq.); V-09 (carbodiimide group equivalent: 200 g / eq.), all manufactured by Nisshinbo Chemical Co., Ltd., and Stavaxol® P (carbodiimide group equivalent: 302 g / eq.), all manufactured by Rhein Chemie. Examples of amine-based curing agents include those having one or more amino groups in a single molecule. Commercially available examples include "KAYABOND C-200S," "KAYABOND C-100," "KAYAHARD AA," "KAYAHARD AB," and "KAYAHARD AS" from Nippon Kayaku Co., Ltd., and "Epicure W" from Mitsubishi Chemical Corporation.

[0270] In combination with components (A) to (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (H) is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, 8% by mass or less, 6% by mass or less, or 5% by mass or less, when the total resin components in the resin composition are taken as 100% by mass. The lower limit of the content of component (H) is not particularly limited and may be 0% by mass. By limiting the content of component (H) to such a range, the effects of the present invention can be obtained more significantly, and it is also preferable because it is easier to realize a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0271] In combination with components (A) to (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, the content of component (H) is preferably 10% by mass or less, more preferably 8% by mass or less, even more preferably 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, or 2% by mass or less, when the non-volatile components in the resin composition are taken as 100% by mass. The lower limit of the content of component (H) is not particularly limited and may be 0% by mass. By limiting the content of component (H) to such a range, the effects of the present invention can be obtained more significantly, and it is also preferable because it is easier to realize a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0272] As described above, in combination with components (A) to (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, and also from the viewpoint of easily realizing a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST), when the resin component in the resin composition is taken as 100% by mass, the total content of components (G) and (H) is preferably 30% by mass or less, more preferably 20% by mass or less, even more preferably 15% by mass or less, 10% by mass or less, 8% by mass or less, 6% by mass or less, or 5% by mass or less, and the lower limit may be 0% by mass.

[0273] As described above, in combination with components (A) to (C), from the viewpoint of realizing a resin composition that produces a cured product with low dielectric loss tangent, low surface roughness after desmear treatment, high adhesion to the plated conductor layer, and suppression of crack occurrence after desmear treatment, and also from the viewpoint of easily realizing a cured product with good heat resistance and good adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST), when the nonvolatile components in the resin composition are taken as 100% by mass, the total content of components (G) and (H) is preferably 15% by mass or less, more preferably 10% by mass or less, even more preferably 8% by mass or less, 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, or 2% by mass or less, and the lower limit may be 0% by mass.

[0274] <Other additives> In addition to the components described above, the resin composition of the present invention may further contain other additives as optional components.

[0275] Other additives include, for example, organometallic compounds such as organocopper compounds, organozinc compounds, and organocobalt compounds; organic fillers such as rubber particles; colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium dioxide, and carbon black; polymerization inhibitors such as hydroquinone, catechol, pyrogallol, and phenothiazine; leveling agents such as silicone-based leveling agents and acrylic polymer-based leveling agents; thickeners such as bentonite and montmorillonite; defoamers such as silicone-based defoamers, acrylic-based defoamers, fluorine-based defoamers, and vinyl resin-based defoamers; ultraviolet absorbers such as benzotriazole-based ultraviolet absorbers; adhesion improvers such as urea silane; adhesion ferrants such as triazole-based adhesion ferrants, tetrazole-based adhesion ferrants, and triazine-based adhesion ferrants; and hindered phenol-based oxides. Examples of additives include antioxidants such as preservatives; fluorescent whitening agents such as stilbene derivatives; surfactants such as fluorine-based surfactants and silicone-based surfactants; flame retardants such as phosphorus-based flame retardants (e.g., phosphate ester compounds, phosphazene compounds, phosphinic acid compounds, red phosphorus), nitrogen-based flame retardants (e.g., melamine sulfate), halogen-based flame retardants, and inorganic flame retardants (e.g., antimony trioxide); dispersants such as phosphate ester-based dispersants, polyoxyalkylene-based dispersants, acetylene-based dispersants, silicone-based dispersants, anionic dispersants, and cationic dispersants; stabilizers such as borate-based stabilizers, titanate-based stabilizers, aluminate-based stabilizers, zirconate-based stabilizers, isocyanate-based stabilizers, carboxylic acid-based stabilizers, and carboxylic acid anhydride-based stabilizers; photopolymerization initiators such as tertiary amines; and photosensitizers such as pyrarizones, anthracenes, coumarins, xanthones, and thioxanthones. Other additives may be used individually or in combination of two or more types. The content of such other additives may be determined according to the properties required of the resin composition.

[0276] <Organic solvents> The resin composition of the present invention may further contain an organic solvent as a volatile component.

[0277] Examples of organic solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, isoamyl acetate, methyl propionate, ethyl propionate, and γ-butyrolactone; ether solvents such as tetrahydropyran, tetrahydrofuran, 1,4-dioxane, diethyl ether, diisopropyl ether, dibutyl ether, and diphenyl ether; alcohol solvents such as methanol, ethanol, propanol, butanol, and ethylene glycol; and 2-ethoxyethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl diglycol acetate, γ-butyrolactone, and methyl methoxypropionate. Examples include ether ester solvents such as methyl lactate, ethyl lactate, and methyl 2-hydroxyisobutyrate; ether alcohol solvents such as 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, and diethylene glycol monobutyl ether (butyl carbitol); amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; nitrile solvents such as acetonitrile and propionitrile; aliphatic hydrocarbon solvents such as hexane, cyclopentane, cyclohexane, and methylcyclohexane; and aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, and trimethylbenzene. Organic solvents may be used individually or in combination of two or more.

[0278] The resin composition of the present invention can be manufactured, for example, by adding components (A), (B), (C), and optionally (D), (E), (F), (G), (H), and other additives and organic solvents in any order and / or some or all at the same time to any preparation container and mixing. The temperature can be set appropriately during the process of adding and mixing each component, and heating and / or cooling may be performed temporarily or throughout the process. In addition, during or after the process of adding and mixing, the resin composition may be stirred or shaken using, for example, a stirring device such as a mixer or a shaking device to disperse it uniformly. In addition, degassing may be performed simultaneously with stirring or shaking under low pressure conditions such as vacuum.

[0279] As described above, the resin composition of the present invention, which contains a combination of components (A) to (C), has a low dielectric loss tangent, exhibits low surface roughness after desmearing, has high adhesion to the plated conductor layer, and can produce a cured product that can suppress the occurrence of cracks after desmearing. Furthermore, as described above, by setting the type and content of each component within a specific range, it is possible to realize a resin composition that produces a cured product with good adhesion to the plated conductor layer even when the plated conductor layer is formed by dry plating, and is suitable because it can significantly suppress the occurrence of cracks after desmearing. Moreover, it can also achieve the excellent effect of having even better heat resistance and making it easier to produce a cured product with even better adhesion to the conductor layer even after high temperature and high humidity environment testing (HAST).

[0280] In one embodiment, the cured product of the resin composition of the present invention exhibits a low dielectric loss tangent (Df). For example, when measured at 5.8 GHz and room temperature (23°C) as described in <Measurement of Dielectric Loss Tangent> below, the Df of the cured product of the resin composition of the present invention may preferably be 0.0030 or less, less than 0.0030, 0.0028 or less, 0.0026 or less, 0.0025 or less, 0.0024 or less, 0.0022 or less, or 0.0020 or less. There is no particular lower limit to the Df, but for example, it may be 0.0005 or more, 0.0006 or more, 0.0008 or more, or 0.0010 or more.

[0281] In one embodiment, the cured product of the resin composition of the present invention exhibits good surface smoothness (low surface roughness) after desmear treatment. For example, when the surface roughness is measured as described in <Measurement of Arithmetic Mean Roughness Ra> below, the arithmetic mean surface roughness Ra of the cured product of the resin composition of the present invention may preferably be less than 200 nm, 180 nm or less, 160 nm or less, 150 nm or less, 140 nm or less, 120 nm or less, or 110 nm or less. There is no particular limit to the lower limit of Ra, but it may be, for example, 10 nm or more, 30 nm or more, or 50 nm or more.

[0282] In one embodiment, the cured product of the resin composition of the present invention exhibits good adhesion to the plated conductor layer. For example, when the peel strength with respect to the plated conductor layer is measured as described in <Measurement of Peel Strength of Plated Conductor Layer> below, the wet plating peel strength (peel strength with respect to the plated conductor layer formed by wet plating) of the cured product of the resin composition of the present invention may preferably be 0.3 kgf / cm or more, greater than 0.3 kgf / cm, 0.35 kgf / cm or more, 0.4 kgf / cm or more, 0.42 kgf / cm or more, 0.44 kgf / cm or more, or 0.45 kgf / cm or more. There is no particular upper limit to the wet plating peel strength, but it may be, for example, 1.5 kgf / cm or less, 1 kgf / cm or less, 0.8 kgf / cm or less, etc. In one embodiment, the dry plating peel strength (peel strength with the plated conductor layer formed by dry plating) of the cured resin composition of the present invention is preferably 0.4 kgf / cm or more, greater than 0.4 kgf / cm, 0.45 kgf / cm or more, 0.5 kgf / cm or more, 0.52 kgf / cm or more, 0.54 kgf / cm or more, or 0.55 kgf / cm or more. There is no particular upper limit to the dry plating peel strength, but it may be, for example, 1.5 kgf / cm or less, 1 kgf / cm or less, 0.8 kgf / cm or less, etc. Furthermore, in one embodiment, the cured resin composition of the present invention exhibits good adhesion to the plated conductor layer even after high temperature and high humidity testing (HAST). The post-HAST plating peel strength of the cured resin composition of the present invention is preferably 0.1 kgf / cm or more, greater than 0.1 kgf / cm, 0.15 kgf / cm or more, 0.2 kgf / cm or more, 0.25 kgf / cm or more, 0.3 kgf / cm or more, or 0.32 kgf / cm or more. There is no particular upper limit to the post-HAST plating peel strength, but it may be, for example, 1.5 kgf / cm or less, 1 kgf / cm or less, 0.8 kgf / cm or less, 0.6 kgf / cm or less, etc.

[0283] In one embodiment, the cured product of the resin composition of the present invention exhibits good crack resistance after desmear treatment. For example, as described in <Evaluation of crack resistance after desmear treatment> below, when a cured product of the resin composition is formed on both sides of a core material in which circular copper pads with a diameter of 350 μm are formed in a grid pattern at 400 μm intervals so that the residual copper content is 60%, and then desmeared, the number of cracks observed in 100 copper pad portions after roughening treatment is preferably 50 or less, 30 or less, 20 or less, or 10 or less.

[0284] In one embodiment, the cured product of the resin composition of the present invention exhibits good heat resistance. For example, when thermomechanical analysis is performed using a thermomechanical analyzer (TMA) as described in <Measurement of Glass Transition Temperature Tg> below, under measurement conditions of a load of 1g and a heating rate of 5°C / min, the Tg of the cured product of the resin composition of the present invention may preferably be 160°C or higher, 170°C or higher, 175°C or higher, 180°C or higher, or 185°C or higher. There is no particular upper limit to the Tg, but it may be, for example, 250°C or lower, 230°C or lower, 220°C or lower, or 210°C or lower.

[0285] As described above, the resin composition of the present invention provides a cured product with a low dielectric loss tangent, low surface roughness after desmearing, high adhesion to the plated conductor layer, and suppression of crack formation after desmearing. Therefore, the resin composition of the present invention can be suitably used as a resin composition for forming the insulating layer of a printed wiring board (resin composition for the insulating layer of a printed wiring board), and more suitably used as a resin composition for forming the interlayer insulating layer of a printed wiring board (resin composition for the interlayer insulating layer of a printed wiring board). The resin composition of the present invention can also be suitably used when the printed wiring board is a circuit board with embedded components. The resin composition of the present invention can also be suitably used as a resin composition for forming the insulating layer of a redistribution substrate for a semiconductor package (resin composition for the insulating layer of a redistribution substrate). In this invention, printed wiring boards and redistribution substrates are collectively referred to as "circuit boards," and therefore the resin composition of the present invention can be suitably used for the insulating layer of a circuit board.

[0286] The resin composition of the present invention can be used in a wide range of applications where a resin composition is required, such as sheet-like laminated materials like resin sheets and prepregs, solder resists, underfill materials, die bonding materials, hole-filling resins, sealing resins, and component embedding resins.

[0287] [Sheet-like laminated materials (resin sheets, prepregs)] The resin composition of the present invention can be used as is, or it may be used in the form of a sheet-like laminated material containing the resin composition.

[0288] As sheet-like laminated materials, the following resin sheets and prepregs are preferred.

[0289] In one embodiment, the resin sheet comprises a support and a layer of a resin composition provided on the support (hereinafter simply referred to as the "resin composition layer"), characterized in that the resin composition layer is formed from the resin composition of the present invention.

[0290] The optimal thickness of the resin composition layer varies depending on the application and may be determined appropriately according to the application. For example, from the viewpoint of thinning printed circuit boards and semiconductor chip packages, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, 120 μm or less, 100 μm or less, 80 μm or less, 60 μm or less, or 50 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, but can usually be 1 μm or more, 5 μm or more, etc.

[0291] Examples of support materials include thermoplastic resin films, metal foils, and release paper, with thermoplastic resin films and metal foils being preferred. Therefore, in one preferred embodiment, the support material is a thermoplastic resin film or a metal foil.

[0292] When using a thermoplastic resin film as a support, examples of thermoplastic resins include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), acrylics such as polycarbonate (PC) and polymethyl methacrylate (PMMA), cyclic polyolefins, triacetylcellulose (TAC), polyether sulfide (PES), polyether ketones, and polyimides. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred, and inexpensive polyethylene terephthalate is particularly preferred.

[0293] When using metal foil as a support, examples of metal foil include copper foil and aluminum foil, with copper foil being preferred. As for copper foil, foil made of single-metal copper may be used, or foil made of an alloy of copper with another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used.

[0294] The support may have a matte finish, corona treatment, or antistatic treatment applied to the surface that bonds with the resin composition layer. Alternatively, a support with a release layer may be used, which has a release layer on the surface that bonds with the resin composition layer. Examples of release agents used in the release layer of the support with a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. Examples of commercially available release agents include "SK-1", "AL-5", and "AL-7" from Lintec Corporation. Furthermore, commercially available support with a release layer may also be used, for example, "Purex" from Toyobo Co., Ltd. and "Unipeel" from Unitika Corporation, which are PET films having a release layer mainly composed of alkyd resin-based release agents or polyolefin resin-based release agents.

[0295] The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. When using a support with a release layer, it is preferable that the overall thickness of the support with the release layer is within the above range.

[0296] When using metal foil as a support, a metal foil with a support substrate, which is formed by laminating a peelable support substrate onto a thin metal foil, may be used. In one embodiment, the metal foil with a support substrate includes a support substrate, a release layer provided on the support substrate, and a metal foil provided on the release layer. When using metal foil with a support substrate as a support, the resin composition layer is provided on the metal foil.

[0297] In a metal foil with a support substrate, the material of the support substrate is not particularly limited, but examples include copper foil, aluminum foil, stainless steel foil, titanium foil, copper alloy foil, etc. When copper foil is used as the support substrate, it may be electrolytic copper foil or rolled copper foil. Furthermore, the release layer is not particularly limited as long as it can be used to peel the metal foil from the support substrate, and examples include an alloy layer of elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, and P; an organic coating, etc.

[0298] In a metal foil with a support substrate, the material of the metal foil is preferably, for example, copper foil or copper alloy foil.

[0299] In a metal foil with a support substrate, the thickness of the support substrate is not particularly limited, but is preferably in the range of 10 μm to 150 μm, and more preferably in the range of 10 μm to 100 μm. The thickness of the metal foil may be, for example, in the range of 0.1 μm to 10 μm.

[0300] In one embodiment, the resin sheet may further include any additional layer as needed. Such an additional layer may be, for example, a protective film provided on the side of the resin composition layer that is not bonded to the support (i.e., the side opposite to the support). The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating the protective film, the adhesion of dust and other debris to the surface of the resin composition layer and scratches can be suppressed.

[0301] A resin sheet can be manufactured, for example, by preparing a resin composition varnish by using a liquid resin composition as is or by dissolving the resin composition in an organic solvent, applying this varnish to a support using a die coater or the like, and then drying it to form a resin composition layer.

[0302] Examples of organic solvents include those similar to those described as components of the resin composition in the <Organic Solvents> section. Organic solvents may be used individually or in combination of two or more.

[0303] Drying may be carried out by known methods such as heating or blowing hot air. The drying conditions are not particularly limited, but the resin composition layer should be dried so that the content of the organic solvent in the resin composition layer is 10% by mass or less, preferably 5% by mass or less. Depending on the boiling point of the organic solvent in the resin composition or resin varnish, for example, when using a resin composition or resin varnish containing 10% to 60% by mass of organic solvent, the resin composition layer can be formed by drying at 50°C to 150°C for 3 to 10 minutes.

[0304] The resin sheet can be stored by rolling it up. If the resin sheet has a protective film, it can be used after removing the protective film.

[0305] In one embodiment, the prepreg is formed by impregnating a sheet-like fibrous substrate with the resin composition of the present invention.

[0306] The sheet-like fibrous substrate used for the prepreg is not particularly limited, and commonly used prepreg substrates such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning printed circuit boards and semiconductor chip packages, the thickness of the sheet-like fibrous substrate is preferably 50 μm or less, more preferably 40 μm or less, even more preferably 30 μm or less, and particularly preferably 20 μm or less. The lower limit of the thickness of the sheet-like fibrous substrate is not particularly limited, but is usually 10 μm or more.

[0307] Prepregs can be manufactured by known methods such as the hot melt method and the solvent method.

[0308] The thickness of the prepreg can be within the same range as the resin composition layer in the resin sheet described above.

[0309] The sheet-like laminated material of the present invention can be suitably used to form an insulating layer of a printed circuit board (for insulating layers of printed circuit boards), and more suitably used to form an interlayer insulating layer of a printed circuit board (for interlayer insulating layers of printed circuit boards). The sheet-like laminated material of the present invention can also be suitably used to form an insulating layer of a redistribution substrate for a semiconductor chip package (for insulating layers of a redistribution substrate). In other words, the sheet-like laminated material of the present invention can be suitably used as an insulating layer for a circuit board. The sheet-like laminated material of the present invention can also be suitably used to encapsulate a semiconductor chip (for semiconductor encapsulation).

[0310] [Circuit board] The resin composition of the present invention can be used to form an insulating layer on a circuit board. The present invention also provides such a circuit board, that is, a circuit board including an insulating layer made of a cured product of the resin composition of the present invention.

[0311] <Printed wiring board> In one embodiment, the circuit board of the present invention is a printed wiring board.

[0312] Printed circuit boards can be manufactured, for example, using the above-mentioned resin sheet by a method including the following steps (I) and (II). (I) A process of laminating a resin sheet onto an inner layer substrate such that the resin composition layer of the resin sheet is bonded to the inner layer substrate. (II) A step of curing (e.g., thermal curing) the resin composition layer to form an insulating layer.

[0313] The "internal layer substrate" used in process (I) is a material that serves as the substrate for a printed wiring board, and examples include glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, etc. The substrate may also have a conductive layer on one or both sides, and this conductive layer may be patterned. An internal layer substrate in which a conductive layer (circuit) is formed on one or both sides of the substrate is sometimes called an "internal layer circuit board." Furthermore, an intermediate product on which an insulating layer and / or a conductive layer is to be formed during the manufacturing of a printed wiring board is also included in the "internal layer substrate" as defined in this invention. If the printed wiring board is a circuit board with embedded components, an internal layer substrate with embedded components may be used.

[0314] The lamination of the inner layer substrate and the resin sheet can be performed, for example, by heating and pressing the resin sheet onto the inner layer substrate from the support side. Examples of the heating and pressing member used to heat and press the resin sheet onto the inner layer substrate (hereinafter also referred to as the "heat pressing member") include a heated metal plate (such as a SUS end plate) or a metal roll (such as a SUS roll). The heating and pressing member may be pressed directly onto the resin sheet, or it may be pressed via an elastic material such as heat-resistant rubber so that the resin sheet can adequately follow the surface irregularities of the inner layer substrate.

[0315] Lamination of the inner layer substrate and the resin sheet may be carried out by a vacuum lamination method. In the vacuum lamination method, the heat-pressure temperature is preferably in the range of 60°C to 160°C, more preferably in the range of 80°C to 140°C, the heat-pressure pressure is preferably in the range of 0.098 MPa to 1.77 MPa, more preferably in the range of 0.29 MPa to 1.47 MPa, and the heat-pressure time is preferably in the range of 20 seconds to 400 seconds, more preferably in the range of 30 seconds to 300 seconds. Lamination may preferably be carried out under reduced pressure conditions of 26.7 hPa or less.

[0316] Lamination can be performed using a commercially available vacuum laminator. Examples of commercially available vacuum laminators include vacuum pressure laminators manufactured by Meiki Seisakusho Co., Ltd., vacuum applicators manufactured by Nikko Materials Co., Ltd., and batch-type vacuum pressure laminators.

[0317] After lamination, the laminated resin sheets may be smoothed by pressing a heat-sealing member from the support side under normal pressure (atmospheric pressure). The pressing conditions for the smoothing process can be the same as the heat-sealing conditions for lamination. The smoothing process can be performed using a commercially available laminator. Lamination and smoothing may be performed continuously using the commercially available vacuum laminator mentioned above.

[0318] The support may be removed between steps (I) and (II), or after step (II). If a metal foil is used as the support, the conductive layer may be formed using the metal foil without peeling off the support. If a metal foil with a support substrate is used as the support, the support substrate (and release layer) should be peeled off. Then, the conductive layer can be formed using the metal foil.

[0319] In step (II), the resin composition layer is cured (e.g., by thermal curing) to form an insulating layer made of the cured resin composition. The curing conditions for the resin composition layer are not particularly limited, and conditions commonly used when forming an insulating layer for a printed circuit board may be used.

[0320] For example, the thermal curing conditions for the resin composition layer vary depending on the type of resin composition, but in one embodiment, the curing temperature is preferably 140°C to 250°C, more preferably 150°C to 240°C, and even more preferably 170°C to 230°C. The curing time can be preferably 5 minutes to 240 minutes, more preferably 10 minutes to 150 minutes, and even more preferably 15 minutes to 120 minutes.

[0321] Prior to thermal curing the resin composition layer, the resin composition layer may be preheated at a temperature lower than the curing temperature. For example, prior to thermal curing the resin composition layer, it may be preheated at a temperature of 50°C to 140°C, preferably 60°C to 135°C, more preferably 70°C to 130°C for 5 minutes or more, preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes, and even more preferably 15 minutes to 100 minutes.

[0322] In manufacturing printed circuit boards, the following steps may be further performed: (III) drilling holes in the insulating layer, (IV) desmearing (roughening) the insulating layer, and (V) forming the conductor layer. These steps (III) through (V) may be carried out according to various methods known to those skilled in the art that are used in the manufacture of printed circuit boards. If the support is removed after step (II), the removal of the support may be carried out between steps (II) and (III), between steps (III) and (IV), or between steps (IV) and (V). Furthermore, if necessary, the formation of the insulating layer and conductor layer in steps (I) through (V) may be repeated to form a multilayer circuit board.

[0323] In other embodiments, the printed circuit board of the present invention can be manufactured using the prepreg described above. The manufacturing method is basically the same as when a resin sheet is used.

[0324] Step (III) is a step of drilling holes in the insulating layer, thereby forming holes such as via holes and through holes in the insulating layer. Step (III) may be carried out using, for example, a drill, laser, plasma, etc., depending on the composition of the resin composition used to form the insulating layer. The dimensions and shape of the holes may be appropriately determined according to the design of the printed circuit board.

[0325] Step (IV) is a step of desmearing (roughening) the insulating layer. This removes the smear generated in the via holes by the drilling process. The desmearing is not particularly limited and can be carried out by various known methods. In one embodiment, the desmearing may be dry desmearing, wet desmearing, or a combination thereof.

[0326] Examples of dry desmear treatment include plasma-based desmear treatment. Plasma-based desmear treatment removes smear generated in via holes by treating the insulating layer with plasma generated by introducing gas into a plasma generator. There are no particular restrictions on the method of generating the plasma, and examples include microwave plasma generated by microwaves, radio frequency plasma generated by radio frequency, atmospheric pressure plasma generated under atmospheric pressure, and vacuum plasma generated under vacuum, with vacuum plasma generated under vacuum being preferred. Furthermore, the plasma used in desmear treatment is preferably RF plasma excited by radio frequency.

[0327] The gas used for plasma generation is not particularly limited as long as it can remove smear in the via holes. For example, it is preferable to use a gas containing fluorine atoms, or a gas containing either N2 or O2. Examples of gases containing fluorine atoms include F2, CF4, C2F6, and SF6. In this case, in addition to the gas containing fluorine atoms, N2, and O2, other gases such as Ar may also be included. In particular, from the viewpoint of improving smear removal and facilitating the realization of an insulating layer with low surface roughness after desmearing, the gas used for plasma generation is preferably a gas containing fluorine atoms, or a gas containing either N2 or O2, more preferably a gas containing fluorine atoms and O2, even more preferably a mixed gas containing O2 and at least one of N2 and CF4, and especially preferably a mixed gas containing O2 and CF4.

[0328] When a mixed gas is used as the gas species, the mixing ratio (gas containing either N2 or O2 / other gas: unit is sccm) is preferably 1 / 0.01 to 1 / 100, more preferably 1 / 0.5 to 1 / 10, and even more preferably 1 / 1 to 1 / 5, from the viewpoint of improving smear removal performance and from the viewpoint of easily realizing an insulating layer with low surface roughness after desmear treatment.

[0329] The duration of the desmear treatment using plasma is not particularly limited, but is preferably 30 seconds or more, more preferably 60 seconds or more, 90 seconds or more, or 120 seconds or more. The upper limit of the desmear treatment duration is preferably 10 minutes or less, and more preferably 5 minutes or less, from the viewpoint of easily achieving an insulating layer with low surface roughness after the desmear treatment.

[0330] Desmearing using plasma can be performed using commercially available plasma desmearing equipment. Among commercially available plasma desmearing equipment, examples suitable for circuit board manufacturing include plasma dry etching equipment from Oxford Instruments, microwave plasma equipment from Nissin, and atmospheric pressure plasma etching equipment from Sekisui Chemical Co., Ltd.

[0331] Alternatively, dry sandblasting can be used as a dry desmear treatment, in which an abrasive material is sprayed from a nozzle to polish the object to be treated. Dry sandblasting can be carried out using commercially available dry sandblasting equipment. When a water-soluble abrasive material is used, rinsing with water after dry sandblasting will prevent the abrasive material from remaining inside the via hole, and the smear can be effectively removed.

[0332] Examples of wet desmear treatments include desmear treatment using an oxidizing agent solution. When desmear treatment is performed using an oxidizing agent solution, it is preferable to perform swelling treatment with a swelling solution, oxidation treatment with an oxidizing agent solution, and neutralization treatment with a neutralizing solution in this order. Examples of swelling solutions include "Swelling Dip Securiganth P" and "Swelling Dip Securiganth SBU" manufactured by Atotec Japan. The swelling treatment is preferably performed by immersing the substrate with via holes in a swelling solution heated to 60°C to 80°C for 5 to 10 minutes. As the oxidizing agent solution, an alkaline permanganate aqueous solution is preferred, for example, a solution obtained by dissolving potassium permanganate or sodium permanganate in an aqueous solution of sodium hydroxide. The oxidation treatment with an oxidizing agent solution is preferably carried out by immersing the substrate after swelling treatment in an oxidizing agent solution heated to 60°C to 80°C for 10 to 30 minutes. Examples of commercially available alkaline permanganate aqueous solutions include "Concentrate Compact P", "Concentrate Compact CP", and "Dozing Solution Securigans P" from Attec Japan. The neutralization treatment with a neutralizing solution is preferably carried out by immersing the substrate after oxidation treatment in a neutralizing solution heated to 30°C to 50°C for 3 to 10 minutes. An acidic aqueous solution is preferred as the neutralizing solution, and an example of a commercially available product is "Reduction Solution Securigans P" from Attec Japan.

[0333] As a wet desmear treatment, a wet sandblasting treatment may also be used, in which an abrasive material and a dispersion medium are sprayed from a nozzle to polish the object to be treated. Wet sandblasting treatment can be carried out using commercially available wet sandblasting equipment.

[0334] When combining dry desmearing and wet desmearing, the dry desmearing may be performed first, or the wet desmearing may be performed first.

[0335] Step (V) is a step of forming a conductive layer, in which a conductive layer is formed on an insulating layer. The conductive material used for the conductive layer is not particularly limited. In a preferred embodiment, the conductive layer contains one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. The conductive layer may be a single-metal layer or an alloy layer, and examples of alloy layers include layers formed from alloys of two or more metals selected from the above group (e.g., nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy). In particular, from the viewpoint of versatility in conductor layer formation, cost, and ease of patterning, single metal layers of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or alloy layers of nickel-chromium alloy, copper-nickel alloy, or copper-titanium alloy are preferred, single metal layers of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or alloy layers of nickel-chromium alloy are more preferred, and single metal layers of copper are even more preferred.

[0336] The conductive layer may be a single-layer structure, or it may be a multi-layer structure in which two or more single-metal layers or alloy layers made of different types of metals or alloys are laminated. When the conductive layer is a multi-layer structure, the layer in contact with the insulating layer is preferably a single-metal layer of chromium, zinc, or titanium, or an alloy layer of nickel-chromium alloy.

[0337] The thickness of the conductor layer depends on the desired circuit board design, but is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.

[0338] The conductor layer may be formed in accordance with known circuit formation methods such as the semi-additive method or the fully additive method.

[0339] For example, when forming a conductive layer by a semi-additive method, a plating seed layer is formed on the surface of the insulating layer, a photoresist is placed on the plating seed layer, and then the photoresist is exposed and developed to expose a portion of the plating seed layer corresponding to the desired circuit pattern. Next, a conductive layer is formed on the exposed plating seed layer by an electroplating method, and then the photoresist is removed. After that, unnecessary metal layers other than the conductive layer formation area are removed by etching or the like to form a conductive layer having the desired circuit pattern.

[0340] When forming a conductive layer by a semi-additive method, the plating seed layer may be formed by dry plating or by wet plating. Examples of dry plating methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, and vacuum deposition, and chemical vapor deposition (CVD) methods such as thermal CVD and plasma CVD. Examples of wet plating methods include electroless plating. The thickness of the plating seed layer is preferably thin from the viewpoint of forming a thin conductive layer, and can be, for example, 1 μm or less, 0.8 μm or less, 0.6 μm or less, 0.5 μm or less, 0.4 μm or less, or 0.2 μm or less. The lower limit of the thickness of the plating seed layer can be, for example, 0.01 μm or more, 0.02 μm or more, from the viewpoint of suppressing plating burn when forming the conductive layer by electroplating.

[0341] In other embodiments, the conductor layer may be formed using metal foil. When forming the conductor layer using metal foil, step (V) is preferably performed between steps (I) and (II). For example, after step (I), the support is removed and the metal foil is laminated onto the surface of the exposed resin composition layer. The lamination of the resin composition layer and the metal foil may be carried out by a vacuum lamination method. The lamination conditions may be the same as those described for step (I). Next, step (II) is performed to form an insulating layer. Subsequently, the metal foil on the insulating layer can be used to form a conductor layer having a desired wiring pattern by conventional known techniques such as the modified semi-additive method.

[0342] Metal foils can be manufactured by known methods such as electrolysis and rolling. Examples of commercially available metal foils include HLP foil and JXUT-III foil manufactured by JX Metals, and 3EC-III foil and TP-III foil manufactured by Mitsui Mining & Smelting Co., Ltd.

[0343] Alternatively, as mentioned above, if a metal foil or a metal foil with a support substrate is used as the support for the resin sheet, the conductive layer may be formed using the metal foil.

[0344] <Semiconductor package redistribution substrate> In one embodiment, the circuit board of the present invention is a redistribution substrate (redistribution layer) for a semiconductor package. The following description will be based on the manufacturing method of the semiconductor package.

[0345] The semiconductor package includes an insulating layer made of a cured product of the resin composition of the present invention as an insulating layer of the redistribution substrate. The semiconductor package may also include a sealing layer made of a cured product of the resin composition of the present invention.

[0346] A semiconductor package can be manufactured, for example, using the resin composition and resin sheet of the present invention by a method including the following steps (1) to (6). The resin composition and resin sheet of the present invention may be used to form the redistribution layer (insulating layer for forming a redistribution substrate) in step (5) or the sealing layer in step (3). An example of forming a redistribution layer and a sealing layer using the resin composition and resin sheet is shown below, but the techniques for forming redistribution layers and sealing layers of semiconductor packages are well known, and those skilled in the art can manufacture semiconductor packages using the resin composition and resin sheet of the present invention in accordance with known techniques. (1) A step of laminating a temporary fixing film onto the substrate, (2) A step of temporarily fixing the semiconductor chip onto a temporary fixing film, (3) A step of forming a sealing layer on a semiconductor chip, (4) Steps to peel off the substrate and temporary fixing film from the semiconductor chip, (5) A step of forming a rewiring layer as an insulating layer on the surface from which the substrate and temporary fixing film of the semiconductor chip have been peeled off, and (6) Step of forming a redistribution layer as a conductor layer on the redistribution formation layer.

[0347] -Process (1)- The material used for the substrate is not particularly limited. Examples of substrates include semiconductor wafers such as silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel sheets (SPCC); substrates made by impregnating glass fibers with epoxy resin and heat-curing them (e.g., FR-4 substrates); and substrates made of bismaleimidotriazine resin (BT resin).

[0348] The temporary fixing film is not limited in material as long as it can be peeled off from the semiconductor chip in step (4) and temporarily fix the semiconductor chip. Commercially available temporary fixing films can be used. Examples of commercially available products include Riva Alpha manufactured by Nitto Denko Corporation.

[0349] -Process (2)- Temporary fixing of semiconductor chips can be performed using known devices such as flip-chip bonders and die bonders. The layout and number of semiconductor chips can be appropriately set according to the shape and size of the temporary fixing film, the number of semiconductor packages to be produced, etc. For example, they can be temporarily fixed in a matrix arrangement with multiple rows and multiple columns.

[0350] -Process (3)- The resin composition layer of the resin sheet of the present invention is laminated onto a semiconductor chip, or the resin composition of the present invention is applied onto a semiconductor chip and cured (e.g., by heat curing) to form a sealing layer.

[0351] For example, lamination of a semiconductor chip and a resin sheet can be performed by removing the protective film from the resin sheet and then heating and pressing the resin sheet onto the semiconductor chip from the support side. Examples of the heating and pressing member used to heat and press the resin sheet onto the semiconductor chip (hereinafter also referred to as the "heating and pressing member") include a heated metal plate (such as a SUS end plate) or a metal roll (such as a SUS roll). It is preferable to press the resin sheet via an elastic material such as heat-resistant rubber, rather than directly pressing the heating and pressing member onto the resin sheet, so that the resin sheet can adequately follow the surface irregularities of the semiconductor chip. Lamination of the semiconductor chip and the resin sheet may also be carried out by a vacuum lamination method, and the lamination conditions are the same as those described in relation to the manufacturing method of printed circuit boards, and the preferred range is also the same.

[0352] After lamination, the resin composition is heat-cured to form a sealing layer. The heat-curing conditions are the same as those described in relation to the manufacturing method of printed circuit boards.

[0353] The resin sheet support may be peeled off after the resin sheet has been laminated onto the semiconductor chip and heat-cured, or the support may be peeled off before the resin sheet has been laminated onto the semiconductor chip.

[0354] When applying the resin composition of the present invention to form a sealing layer, the application conditions are the same as those for forming the resin composition layer described in relation to the resin sheet of the present invention, and the preferred ranges are also the same.

[0355] -Process (4)- The method for peeling off the substrate and the temporary fixing film can be appropriately changed depending on the material of the temporary fixing film, etc. Examples include a method of peeling off the temporary fixing film by heating and foaming (or expanding) it, and a method of peeling off the temporary fixing film by irradiating it with ultraviolet light from the substrate side to reduce the adhesive strength of the temporary fixing film.

[0356] In the method of peeling off a temporary fixing film by heating and foaming (or expanding) it, the heating conditions are usually 100-250°C for 1-90 seconds or 5-15 minutes. In the method of peeling off a temporary fixing film by irradiating it with ultraviolet light from the substrate side to reduce its adhesive strength, the amount of ultraviolet light irradiated is usually 10 mJ / cm². 2 ~1000 mJ / cm 2 That is the case.

[0357] -Process (5)- The present invention provides a resin composition and resin sheet used to form a rewiring layer (an insulating layer for a rewiring substrate).

[0358] After forming the redistribution layer, via holes may be formed in the redistribution layer to interlayer connect the semiconductor chip with the conductor layer described later. The via holes may be formed by known methods depending on the material of the redistribution layer.

[0359] -Process (6)- The formation of the conductor layer on the rewiring layer may be carried out in the same manner as in step (V) described in relation to the manufacturing method of a printed circuit board. Alternatively, steps (5) and (6) may be repeated to alternately stack the conductor layer (rewiring layer) and the rewiring layer (insulating layer) (build-up).

[0360] In manufacturing a semiconductor package, the following steps may be further performed: (7) forming a solder resist layer on a conductor layer (redistribution layer), (8) forming bumps, and (9) dicing multiple semiconductor packages into individual semiconductor packages to form individual pieces. These steps may be carried out in accordance with various methods known to those skilled in the art that are used in the manufacture of semiconductor packages.

[0361] The resin composition and resin sheet of the present invention provide a cured product with low dielectric loss tangent, low surface roughness after desmearing, high adhesion to the plated conductor layer, and suppression of crack formation after desmearing. By forming a rewiring layer (insulating layer) using these materials, it is possible to realize a semiconductor package with extremely low transmission loss, regardless of whether the semiconductor package is a fan-in or fan-out type package. In one embodiment, the semiconductor package of the present invention is a fan-out type package. The resin composition and resin sheet of the present invention can be applied to fan-out type panel-level packages (FOPLPs) and fan-out type wafer-level packages (FOWLPs). In one embodiment, the semiconductor package of the present invention is a fan-out type panel-level package (FOPLP) or a fan-out type wafer-level package (FOWLP).

[0362] [Semiconductor device] The semiconductor device of the present invention includes a layer made of a cured product of the resin composition layer of the present invention. The semiconductor device of the present invention can be manufactured using the circuit board of the present invention.

[0363] Examples of semiconductor devices include various types of semiconductor devices used in electrical products (e.g., computers, mobile phones, digital cameras, and televisions) and vehicles (e.g., motorcycles, automobiles, trains, ships, and aircraft). [Examples]

[0364] The present invention will be described in detail below with reference to examples. The present invention is not limited to these examples. In the following, unless otherwise specified, "parts" and "%" refer to "parts by mass" and "% by mass," respectively.

[0365] <Synthesis Example 1: Preparation of Compound a1> In a 1 L flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer, 48.9 g (0.4 mol) of 2,6-dimethylphenol, 272.0 g (1.4 mol) of a,a'-dihydroxy-1,3-diisopropylbenzene, 220 g of xylene, and 70 g of activated clay were charged and heated to 120°C while stirring. The mixture was then heated to 210°C while removing the distillate using a Dean-Stark tube, and the reaction was allowed to proceed for 3 hours. After cooling to 140°C, 146.69 g (1.2 mol) of 2,6-dimethylphenol was charged, and the mixture was heated to 220°C and reacted for 3 hours. After the reaction, the mixture was air-cooled to 100°C, diluted with 300 g of toluene, and the activated clay was removed by filtration. Under reduced pressure, the solvent and low molecular weight substances such as unreacted materials were removed by distillation to obtain intermediate phenol compound (a) 365.3 g. The hydroxyl group equivalent (phenol equivalent) of the obtained intermediate phenol compound (a) was 299 g / eq.

[0366] In a 2L flask equipped with a thermometer, condenser, and stirrer, 365.3g of the obtained intermediate phenol compound (a) and 700g of toluene were charged and stirred at approximately 85°C. Next, 29.9g (0.24mol) of dimethylaminopyridine was charged, and when it appeared that all the solid had dissolved, 277.5g (1.8mol) of methacrylic anhydride was added dropwise over 1 hour. After the addition was complete, the reaction was continued at 85°C for a further 3 hours. The reaction solution was added dropwise over 1 hour to 4000g of methanol in a 5L beaker, which had been vigorously stirred with a magnetic stirrer. The resulting precipitate was filtered under reduced pressure through a membrane filter and then dried to obtain compound a1 (average number of repeating units m), which has an indan skeleton with the following structural formula. A A compound with a molecular weight of 1.6 (weight-average molecular weight of 1500) was obtained. In the examples described later, a toluene solution of compound a1 (70% by mass of non-volatile components) was used.

[0367] [ka]

[0368] <Synthesis Example 2: Preparation of Compound a2> In a 1 L flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer, 48.9 g (0.4 mol) of 2,6-dimethylphenol, 272.0 g (1.4 mol) of α,α'-dihydroxy-1,3-diisopropylbenzene, 280 g of xylene, and 70 g of activated clay were charged and heated to 120°C while stirring. The mixture was then heated to 210°C while removing the distillate using a Dean-Stark tube, and the reaction was carried out for 3 hours. After cooling to 140°C, 146.6 g (1.2 mol) of 2,6-dimethylphenol was charged, and the mixture was heated to 220°C and reacted for 3 hours. After the reaction, the mixture was air-cooled to 100°C, diluted with 300 g of toluene, and the activated clay was removed by filtration. Under reduced pressure, the solvent and low molecular weight substances such as unreacted materials were removed by distillation to obtain intermediate phenol compound (a) 365.3 g. The hydroxyl group equivalent (phenol equivalent) of the obtained intermediate phenol compound (a) was 299 g / eq.

[0369] In a 2 L flask equipped with a thermometer, condenser, and stirrer, 365.3 g of the obtained intermediate phenol compound (a), 0.184 g (0.001 mol) of 2,4-dinitrophenol (2,4-DNP), 23.5 g (0.073 mol) of tetrabutylammonium bromide (TBAB), 209 g (1.37 mol) of chloromethylstyrene, and 400 g of methyl ethyl ketone were added, and the mixture was heated to 75°C while stirring. Next, a 48% NaOH aqueous solution was added dropwise to the reaction vessel, which was maintained at 75°C, over 20 minutes. After the addition was complete, stirring was continued at 75°C for 4 hours. After 4 hours, the mixture was cooled to room temperature, 100 g of toluene was added, and then 10% HCl was added to neutralize it. The aqueous phase was then separated by liquid-liquid extraction and washed three times with 300 ml of water. The obtained organic phase was concentrated by distillation, and the product was reprecipitated by adding methanol. The precipitate is filtered and dried to obtain compound a2 having an indan skeleton with the following structural formula (average number of repeating units m). A A compound with a molecular weight of 1.6 (weight-average molecular weight of 1500) was obtained. In the examples described later, a toluene solution of compound a2 (70% by mass of non-volatile components) was used.

[0370] [ka]

[0371] <Synthesis Example 3: Preparation of Maleimide Compound A> A MEK solution (62% by mass of non-volatile components) of maleimide compound A (Mw / Mn=1.81, t''=1.47 (mainly 1, 2, or 3)) synthesized by the method described in Synthesis Example 1 of the Japan Institute of Invention and Innovation, Technical Report No. 2020-500211 was prepared. This maleimide compound A has a structure represented by the following formula (M) and corresponds to the maleimide compounds represented by the aforementioned formula (B1-4).

[0372] [ka]

[0373] <Synthesis Example 4: Preparation of Maleimide Compound B> (I) Synthesis of intermediate amine compound B' In a flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer, 242.4 g (2.0 mol) of 2-ethylaniline, 242 g of xylene, and 80 g of activated clay were charged. The mixture was heated to 130°C while stirring and held for 30 minutes. Then, 272.0 g of a divinylbenzene / ethylstyrene mixture (DVB-810, manufactured by Nippon Steel Chemical & Material Co., Ltd., divinylbenzene / ethylstyrene = 81 / 19 (mol)%) was added dropwise over 2 hours, and the mixture was allowed to react for 1 hour. The mixture was then heated to 190°C over 6 hours and held for 10 hours. After the reaction, the mixture was air-cooled to 100°C, diluted with 300 g of toluene, and the activated clay was removed by filtration. The solvent and low molecular weight substances such as unreacted materials were removed under reduced pressure to obtain the intermediate amine compound B'. The amine equivalent of intermediate amine compound B' was 214 g / eq.

[0374] (II) Synthesis of maleimide compound B (maleimidization) A 2L flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer was charged with 117.7g (1.2mol) maleic anhydride and 700g toluene, and stirred at room temperature. Next, a mixed solution of intermediate amine compound B' (214g, 1 equivalent) and dimethylformamide (175g) was added dropwise over 1 hour, followed by a reaction for 2 hours. 37.1g of p-toluenesulfonic acid monohydrate was added to the reaction mixture, and the mixture was heated to 115°C. Under reflux, the azeotropic formation of water and toluene was cooled and separated. Only the toluene was returned to the system for dehydration over 5 hours. After air cooling to room temperature, the mixture was neutralized with a 49% NaOH aqueous solution. Subsequently, toluene and water were removed by vacuum distillation at 60°C, and 600g of MEK (methyl ethyl ketone) was added to the DMF solution remaining in the flask. The solution was heated to 60°C, and the salts in the solution were removed by three separate liquid-liquid treatments with 200g of deionized water. Further addition of sodium sulfate and drying, the reaction product was concentrated under reduced pressure and vacuum-dried at 80°C to obtain maleimide compound B. Maleimide compound B corresponds to the maleimide compound represented by the aforementioned formula (B1-5-1).

[0375] <Synthesis Example 5: Preparation of Maleimide Compound C> (I) Synthesis of intermediate amine compound C' In a flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer, 400 g (3.3 mol) of 2-ethylaniline, 127 g of a compound having a benzyl ether skeleton (Fudo Co., Ltd. "Nikanol L"), 193 g of toluene, and 53 g of activated clay were charged. The mixture was heated to 120°C while stirring and held for 30 minutes. Then, the temperature was raised to 150°C and held for 3 hours. After that, the temperature was raised to 200°C over 30 minutes and held for 10 hours. Next, the mixture was diluted with 193 g of toluene, and the activated clay was filtered off. The filtrate was heated under reduced pressure to remove the solvent and excess 2-ethylaniline, yielding the intermediate amine compound C'. The amine equivalent of the intermediate amine compound C' was 209 g / eq.

[0376] (II) Synthesis of maleimide compound C (maleimidization) A 2L flask equipped with a thermometer, condenser, Dean-Stark trap, and stirrer was charged with 73.2g (126mol, 1.3 equivalents) of maleic anhydride and 461g of toluene, and stirred at room temperature. Next, a mixed solution of intermediate amine compound C' 209g (1 equivalent) and dimethylformamide 57.7g was added dropwise over 1 hour, and the reaction was allowed to proceed for 2 hours. 9.72g of p-toluenesulfonic acid monohydrate was added to the reaction solution, and the solution was heated under reflux. The azeotropic formation of water and toluene was cooled and separated. After heating to 115°C and cooling the azeotropic formation of water and toluene under reflux, only toluene was returned to the system and the dehydration reaction was carried out for 5 hours. After air cooling to room temperature, the solution was concentrated under reduced pressure, and the brown solution was dissolved in 600g of ethyl acetate. The solution was washed three times with 200g of deionized water and three times with 150g of 2% sodium bicarbonate aqueous solution. Next, sodium sulfate was added and dried, and the reaction product was concentrated under reduced pressure. The resulting product was then vacuum-dried at 80°C for 4 hours to obtain maleimide compound C. In the examples described later, a MEK solution of maleimide compound C (62% by mass of non-volatile components) was used. Maleimide compound C corresponds to the maleimide compound represented by the formula (B1-6-1) described above.

[0377] <Synthesis Example 6: Preparation of Thermoplastic Resin A> A monomer composition was obtained by mixing 46.5 g of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (BPADA), 37.8 g of 4,4'-[1,4-phenylenebis[(1-methylethylidene)-4,1-phenyleneoxy]]bisbenzeneamine (BPPAN), 12.8 g of dimeramine (PRIAMINA1075, manufactured by Croda Japan), 1.9 g of 5-norbornene-2,3-dicarboxylic acid anhydride, and 40 g of toluene as a solvent in 400 g of N,N-dimethylacetamide (DMAc) as a solvent. The mixture was stirred and reacted at room temperature and atmospheric pressure for 3 hours. This yielded a polyamic acid solution.

[0378] Next, the polyamic acid solution was heated, and while maintaining the temperature at approximately 160°C, the condensed water was azeotropically removed with toluene under a nitrogen stream. It was confirmed that a predetermined amount of water had accumulated in the moisture meter and that no further water leakage was observed. After confirmation, the reaction solution was further heated, stirred at 200°C for 1 hour, and then cooled. This yielded a varnish containing thermoplastic resin A, which is a terminally olefin-modified polyimide resin (20% by mass of non-volatile components).

[0379] <Manufacturing of resin composition varnish: Examples 1-17 and Comparative Examples 1-3> Each component was weighed in the mass parts listed in Table 1, and then 10 parts of MEK and 10 parts of cyclohexanone were added and uniformly dispersed using a high-speed rotary mixer to obtain a resin composition varnish.

[0380] The details of each component listed in Table 1 are as follows:

[0381] (A) Compound represented by formula (A-1) • Compound a1: The compound obtained in Synthesis Example 1, in a toluene solution containing 70% by mass of nonvolatile components. • Compound a2: The compound obtained in Synthesis Example 2, in a toluene solution containing 70% by mass of non-volatile components.

[0382] (A')(A) component comparison compound • SA9000: Methacrylic-modified polyphenylene ether compound, manufactured by SABIC. • OPE-2St: Styrene-modified polyphenylene ether compound, toluene solution containing 65% by mass of non-volatile components, manufactured by Mitsubishi Gas Chemical Company.

[0383] (B) Maleimide compound • MIR-3000-70MT: Aromatic maleimide compound, manufactured by Nippon Kayaku Co., Ltd., MEK-toluene mixed solution with 70% by mass of non-volatile components. • MIR-5000-60T: Aromatic maleimide compound, manufactured by Nippon Kayaku Co., Ltd., toluene solution with 60% by mass of non-volatile components. • Maleimide compound A: Maleimide compound obtained in Synthesis Example 3, in a MEK solution containing 62% by mass of nonvolatile components. • Maleimide compound B: Maleimide compound obtained in Synthesis Example 4 • Maleimide compound C: Maleimide compound obtained in Synthesis Example 5, in a MEK solution containing 62% by mass of nonvolatile components. BMI-689: Aliphatic maleimide compound, Desinger Molecules N-alkylbismaleimide with a dimeramine-derived skeleton, manufactured by Inc. • BMI-1500: Aliphatic maleimide resin, Desinger Molecule N-alkylbismaleimide with a dimeramine-derived skeleton, manufactured by s Inc.

[0384] (C) Inorganic filler • SO-C2: Spherical silica surface-treated with an amine-based silane coupling agent (KBM573, manufactured by Shin-Etsu Chemical Co., Ltd.), with an average particle size of 0.5 μm and a specific surface area of ​​5.8 m². 2 / g, manufactured by Admatex Corporation

[0385] (D) Thermoplastic resin • Thermoplastic resin A: A solution of the polyimide resin obtained in Synthesis Example 6, containing 20% ​​by mass of non-volatile components. • P2000: Hydrogenated styrene-based thermoplastic elastomer, manufactured by Asahi Kasei Corporation. • YX7891T30: Phenoxy resin, toluene solution containing 30% by mass of non-volatile components, manufactured by Mitsubishi Chemical Corporation.

[0386] (E) Curing accelerator • 1B2PZ: Manufactured by Shikoku Chemicals Co., Ltd. • Luperox DTA: di-t-amyl peroxide (manufactured by Arkema Yoshitomi Co., Ltd.)

[0387] <Preparation of hardened sample A for evaluation> (1) Preparation of a resin sheet with a resin composition layer thickness of 30 μm A polyethylene terephthalate film (Lintec Corporation's "AL5", 38 μm thick) with a release layer was prepared as a support. The resin composition varnish obtained in the examples and comparative examples was uniformly applied to the release layer of this support so that the thickness of the resin composition layer after drying was 30 μm. The resin composition was then dried at 80°C to 100°C (average 90°C) for 2 minutes to obtain a resin sheet containing the support and the resin composition layer.

[0388] (2) Preparation of hardened material for evaluation The obtained resin sheet was heated in a 200°C oven for 90 minutes to cure. By peeling the support from the resin sheet after removing it from the oven, a cured resin composition layer was obtained. The obtained cured product is referred to as "Cured Product A for Evaluation".

[0389] <Fabrication of evaluation substrates A, B, and C> (1) Preparation of a resin sheet with a resin composition layer thickness of 30 μm A polyethylene terephthalate film (Lintec Corporation's "AL5", 38 μm thick) with a release layer was prepared as a support. The resin composition varnish obtained in the examples and comparative examples was uniformly applied to the release layer of this support so that the thickness of the resin composition layer after drying was 30 μm. The resin composition was then dried at 80°C to 100°C (average 90°C) for 2 minutes to obtain a resin sheet containing the support and the resin composition layer.

[0390] (2) Preparation of inner layer substrate A glass cloth substrate epoxy resin double-sided copper-clad laminate (copper foil thickness 18 μm, substrate thickness 0.4 mm, Panasonic "R1515A") with an inner layer circuit was subjected to a 1 μm roughening treatment of the copper surface by etching both sides with a micro-etching agent (MEC "CZ8101").

[0391] (3) Lamination of resin sheets Using a batch-type vacuum pressure laminator (Nikko Materials Co., Ltd., 2-stage build-up laminator "CVP700"), resin sheets were laminated to both sides of the inner layer substrate so that the resin composition layer was in contact with the inner layer substrate. Lamination was performed by reducing the pressure to 13 hPa or less by depressurizing for 30 seconds, and then pressing at 140°C and a pressure of 0.74 MPa for 30 seconds. Subsequently, a hot press was performed at 110°C and a pressure of 0.5 MPa for 60 seconds.

[0392] (4) Thermocuring of the resin composition layer Subsequently, the inner layer substrate laminated with a resin sheet was placed in a 100°C oven and heated for 30 minutes, then transferred to a 190°C oven and heated for another 30 minutes to heat-cur the resin composition layer and form an insulating layer. After that, the support was peeled off to obtain a cured substrate in which the insulating layer, inner layer substrate, and insulating layer were laminated in that order.

[0393] (5) Formation of plated conductor layer The plated conductor layer was formed using the wet method and the dry method as described below.

[0394] (5-1) Formation of plated conductor layer by wet method (5-1-1) Desmear treatment The cured substrate obtained in (4) above was subjected to a desmear treatment as a roughening treatment. For the desmear treatment, a wet desmear treatment was performed as follows. Specifically, the cured substrate was immersed in a swelling solution (Atotec Japan's "Swelling Dip Securigant P," an aqueous solution of diethylene glycol monobutyl ether and sodium hydroxide) at 60°C for 5 minutes, and then in an oxidizing agent solution (Atotec Japan's "Concentrate Compact CP," an aqueous solution of potassium permanganate at approximately 6% and sodium hydroxide at approximately 4%) at 80°C for 20 minutes. Next, it was immersed in a neutralizing solution (Atotec Japan's "Reduction Solution Securigant P," an aqueous sulfuric acid solution) at 40°C for 5 minutes, and then dried at 80°C for 10 minutes. The resulting substrate is referred to as "Evaluation Substrate A."

[0395] (5-1-2) Formation of the plated conductor layer The conductive layer was formed by wet plating as follows. Specifically, a conductive layer was formed on the roughened surface of the insulating layer according to a semi-additive method. In detail, the substrate after roughening was immersed in an electroless plating solution containing PdCl2 at 40°C for 5 minutes, and then immersed in an electroless copper plating solution at 25°C for 20 minutes to form a plating seed layer. Next, after annealing by heating at 150°C for 30 minutes, a plating resist was formed, and a pattern was created so that a portion of the plating seed layer was exposed corresponding to the desired circuit pattern. Subsequently, copper sulfate electroplating was performed to form a conductive layer with a thickness of 25 μm. The obtained substrate is referred to as "evaluation substrate B".

[0396] (5-2) Formation of plated conductor layer by dry method (5-2-1) Desmear treatment The cured substrate obtained in (4) above was subjected to a desmear treatment as a roughening treatment. For the desmear treatment, a dry desmear treatment was performed as follows. Specifically, the hardened substrate was subjected to dry desmearing for 5 minutes using a vacuum plasma etching system (Tepla 100-E PLASMA SYSTEM) under the conditions of O2 / CF4 (mixed gas ratio) = 25 / 75 and a vacuum of 100 Pa.

[0397] (5-2-2) Formation of the plated conductor layer A conductive layer was formed by dry plating as follows. In detail, a 20 nm thick diffusion barrier layer (Ti layer) was formed on the surface of the insulating layer of the substrate obtained in (5-2-1) using a sputtering apparatus (Canon Anelva "E-400S"), and then a 150 nm thick conductive seed layer (Cu layer) was formed, thereby creating a 170 nm thick plating seed layer. The obtained substrate was annealed by heating at 130°C for 30 minutes, after which a plating resist was formed, and a pattern was created so that a portion of the plating seed layer was exposed corresponding to the desired circuit pattern. Subsequently, copper sulfate electroplating was performed to form a conductive layer with a thickness of 25 μm. The obtained substrate is referred to as "evaluation substrate C".

[0398] <Measurement of dielectric loss tangent> Each evaluation cured material A was cut to a length of 80 mm and a width of 2 mm to obtain test specimens. The dielectric loss tangent (Df value) of these test specimens was measured using the cavity resonance perturbation method with an Agilent Technologies HP8362B at a measurement frequency of 5.8 GHz and a measurement temperature of 23 °C. Measurements were performed on two test specimens, and the arithmetic mean was taken as the dielectric loss tangent of each evaluation cured material.

[0399] <Measurement of arithmetic mean roughness Ra> For evaluation substrate A, the arithmetic mean roughness Ra of the insulating layer surface was determined using a non-contact surface roughness meter (Bruker WYKO GT-X) in VSI mode with a 50x lens, measuring a range of 121 μm × 92 μm. The measurement was performed by calculating the average of 10 points.

[0400] <Measurement of peel strength of plated conductor layer> The peel strength of the insulating layer and the plated conductor layer was measured in accordance with the Japanese Industrial Standard (JIS C6481) as follows. A tensile testing machine (TSE Corporation "AC-50C-SL") was used for the measurements.

[0401] -Wet plating peel strength- Regarding the peel strength of the plated conductor layer formed by wet plating (wet plating peel strength), a 10 mm wide and 100 mm long cut was made in the conductor layer of evaluation substrate B, one end of which was peeled off and grasped with a gripper. The load (kgf / cm) was measured when 35 mm was peeled off vertically at a speed of 50 mm / min at room temperature, and the peel strength was determined.

[0402] - Dry plating peel strength - Regarding the peel strength (dry plating peel strength) of the plated conductor layer formed by dry plating, a 10 mm wide and 100 mm long cut was made in the conductor layer of evaluation substrate C, one end of which was peeled off and grasped with a gripper. The load (kgf / cm) was measured when 35 mm was peeled off vertically at a speed of 50 mm / min at room temperature, and the peel strength was determined.

[0403] -Plating peel strength after high temperature and high humidity environment testing (HAST)- Furthermore, evaluation substrate B underwent a 100-hour high-temperature, high-humidity environment test at 130°C and 85%RH using an accelerated lifetime testing apparatus (PM422, manufactured by Kusumoto Chemical Co., Ltd.). Subsequently, a 10mm wide, 100mm long cut was made in the conductive layer of evaluation substrate B, one end of which was peeled off and grasped with a gripper. The load (kgf / cm) was measured when 35mm was peeled off vertically at a speed of 50mm / min at room temperature, and the peel strength was determined.

[0404] <Evaluation of crack resistance after desmear treatment> A polyethylene terephthalate film (Lintec Corporation's "AL5", 38 μm thick) with a release layer was prepared as a support. The resin varnish obtained in the examples and comparative examples was uniformly applied to the release layer of this support so that the thickness of the resin composition layer after drying was 30 μm, and the film was dried at 90°C for 2 minutes to obtain a resin sheet containing the support and the resin composition layer.

[0405] The obtained resin sheet was laminated to both sides of an inner layer substrate using a batch-type vacuum pressure laminator (Nikko Materials 2-stage build-up laminator "CVP700"), which was made by forming a grid of circular copper pads (copper thickness 35 μm) with a diameter of 350 μm at 400 μm intervals, so that the remaining copper content was 60%. This lamination was performed by reducing the pressure to 13 hPa or less for 30 seconds, then pressing at a temperature of 140°C and a pressure of 0.74 MPa for 30 seconds. Next, a hot press was performed at a temperature of 110°C and a pressure of 0.5 MPa for 60 seconds. This was then placed in a 100°C oven and heated for 30 minutes, and then transferred to a 190°C oven and heated for another 30 minutes. Furthermore, the support was peeled off, and the resulting circuit board was subjected to a desmear treatment as a roughening treatment. Specifically, it was immersed in a swelling solution (Atotec Japan's "Swelling Dip Securigant P") at 60°C for 10 minutes, then in a roughening solution (Atotec Japan's "Concentrate Compact P", an aqueous solution of KMnO4: 60 g / L, NaOH: 40 g / L) at 80°C for 30 minutes, and finally immersed in a neutralizing solution (Atotec Japan's "Reduction Solution Securigant P") at 40°C for 5 minutes. After the desmear treatment, 100 copper pads of the circuit board were observed, and the presence or absence of cracks in the resin composition layer was evaluated according to the following criteria. ○: 10 or fewer cracks △: 0 to 50 cracks ×: More than 50 cracks

[0406] <Measurement of glass transition temperature Tg> Each hardened material A for evaluation was cut to a width of approximately 5 mm and a length of approximately 15 mm to obtain test specimens. Thermomechanical analysis was performed on these test specimens using a thermomechanical analyzer (Rigaku Corporation, "Thermo Plus TMA8310") by the tensile loading method. Specifically, after mounting the test specimens in the apparatus, measurements were taken twice consecutively under measurement conditions of a load of 1 g and a heating rate of 5 °C / min (the first time the temperature was raised to 200 °C, and the second time to 260 °C). The glass transition temperature was obtained in the second measurement.

[0407] The results for Examples 1-17 and Comparative Examples 1-3 are shown in Table 1. In the table, "NV" represents the non-volatile component content (the mass of the non-volatile component when the total mass of the target component is set to 1). Furthermore, a × in the dielectric loss tangent evaluation result indicates that the material was too hard and brittle to measure, and a × in the plating peel strength evaluation result indicates that the plating did not adhere when forming the plated conductor layer, making measurement impossible.

[0408] [Table 1]

Claims

1. (A) Compound represented by formula (A-1), (B) Maleimide compounds, and (C) Inorganic filler A resin composition containing the following: 【Chemistry 1】 (In formula (A-1), X Ａ ｍ m X Ａ This represents an n-valent group formed by the bonding of these elements. X Ａ Each of these independently represents a 1- to 3-valent hydrocarbon group which may have substituents, Y Ａ Each of these independently represents a monovalent group containing a double bond which may have substituents, Each Ar independently represents a divalent aromatic hydrocarbon group having two alkyl groups as substituents, which may be the same or different. Z Ａ Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. n represents an integer between 1 and 3. (m represents an integer between 1 and 100.)

2. The resin composition according to claim 1, wherein when the resin component in the resin composition is considered to be 100% by mass, the total content of component (A) and component (B) is 50% by mass or more.

3. Y Ａ The resin composition according to claim 1, wherein the group represents an acryloyl group, a methacryloyl group, or a vinylbenzyl group.

4. The resin composition according to claim 1, wherein the compound represented by formula (A-1) includes the compound represented by formula (A-2). 【Chemistry 2】 (In formula (A-2), X Ａ１ Each of these independently represents a divalent aromatic hydrocarbon group which may have substituents, Y Ａ each independently represents a monovalent group containing a double bond which may have a substituent; Ar each independently represents a divalent aromatic hydrocarbon group having two alkyl groups which may be the same or different as substituents; Z Ａ Each of these independently represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. (m represents an integer between 1 and 100.)

5. The resin composition according to claim 1, wherein the compound represented by formula (A-1) includes the compound represented by formula (A-3). 【Transformation 3】 (In formula (A-3), Y Ａ Each independently represents a monovalent group containing a double bond which may have substituents, and each independently represents a divalent aromatic hydrocarbon group having two alkyl groups which may be the same or different as substituents. Z Ａ This represents a single bond or a divalent aromatic hydrocarbon group which may have substituents. (m represents an integer between 1 and 100.)

6. The resin composition according to claim 1, wherein component (B) comprises an aromatic maleimide compound.

7. The resin composition according to claim 6, wherein the content of aromatic maleimide compounds in component (B) is 50% by mass or more.

8. The resin composition according to claim 6, wherein the mass ratio of component (A) to the aromatic maleimide compound (aromatic maleimide compound / component (A)) is 5 or less.

9. The resin composition according to claim 1, wherein when the total amount of resin components in the resin composition is 100% by mass, the content of component (A) is 20% by mass or more.

10. The resin composition according to claim 1, wherein when the resin component in the resin composition is considered to be 100% by mass, the content of component (B) is 20% by mass or more.

11. The resin composition according to claim 1, wherein, when the nonvolatile components in the resin composition are taken as 100% by mass, the content of component (C) is 50% by mass or more.

12. The resin composition according to claim 1, further comprising (D) a thermoplastic resin.

13. The resin composition according to claim 1, further comprising (E) a curing accelerator.

14. The resin composition according to claim 1, for use as an insulating layer for a circuit board.

15. A resin sheet comprising a support and a layer of the resin composition according to any one of claims 1 to 14 provided on the support.

16. The resin sheet according to claim 15, wherein the support is a thermoplastic resin film or a metal foil.

17. A circuit board comprising an insulating layer made of a cured product of the resin composition according to any one of claims 1 to 14.

18. A semiconductor device comprising the circuit board described in claim 17.

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