Highly oriented buffer layers for growing YBiPt(110) for spintronic applications

Abstract

The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used for high-temperature applications. Disclosed herein are various buffer and / or intermediate layer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack including a buffer layer including one or more layers each individually including MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, or YBiPt; an SOT layer including YBiPt with a (110) orientation; an intermediate layer including one or more of MgO, Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN; and a ferromagnetic layer.

Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims the benefit of U.S. Provisional Patent Application No. 63 / 508,164, filed June 14, 2023, which claims the benefit of U.S. Provisional Patent Application No. 18 / 740,054, filed June 11, 2024, which applications are incorporated herein by reference. [Background technology]

[0002] FIELD OF THE INVENTION Embodiments of the present disclosure generally relate to spintronic devices having an oriented buffer layer for growing topological semimetallic materials.

[0003] Description of Related Art Spintronic devices are used in a variety of sensor, data storage, memory, and logic applications and have recently shown promise for supporting devices for artificial intelligence applications. In the search for efficient spin Hall effect (SHE) materials for such devices, various materials have been attempted, including various topological insulator materials with high spin Hall angles.

[0004] YPtBi layers are narrow-bandgap topological semimetals that possess both a giant spin Hall effect and high electrical conductivity. YPtBi has been proposed for various spin-orbit torque (SOT) device applications, such as magnetoresistive random access memory (MRAM) devices, magnetic recording read heads, sensors, and spin Hall layers for energy-assisted magnetic recording (EAMR) magnetic recording heads. However, utilizing YPtBi materials in commercial SOT applications can present several obstacles. For example, YPtBi materials require specific buffer and / or intermediate layers, as well as optimal processing conditions, to achieve the desired orientation.

[0005] Therefore, there is a need for improved SOT devices that utilize TSM layers with desired crystal orientations. Summary of the Invention

[0006] The present disclosure generally relates to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used in high-temperature applications. Various buffer and / or intermediate layer configurations in spintronic stacks are disclosed herein that can promote the growth of YBiPt in a (110) orientation to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer including a layer having an orientation comprising a bcc alloy with a lattice spacing in the range of approximately a=3.15 Å to a=3.32 Å, composed of one or more materials selected from the group consisting of Ta, Nb, Hf, Mo, V, and W. Alloy options include (1) forming either a (110) or (100) orientation, such as the Ta-rich Ta-W alloy Ta3W2(110); (2) forming either a (110) or (100) orientation, such as the W-rich TaW2(100); and (3) using nitride alloys of these elements with fcc (100) orientation, such as Ta3W2N, TaW2N, or HfN, with lattice spacings ranging from a=4.45 Å to a=4.70 Å. The buffer layer may further include one or more growth template layers of either MgO(100), TiN(100), or RuAl(100), or on a thin layer of heated YPt. The spintronic stack further includes a SOT layer comprising (110)-oriented YBiPt disposed on the buffer layer, an optional intermediate layer disposed on the SOT layer, a ferromagnetic layer disposed on the intermediate layer, and a capping layer disposed on the ferromagnetic layer.

[0007] In one embodiment, the spintronic stack includes a buffer layer including a layer having an orientation including Ta or Nb, a spin-orbit torque (SOT) layer including YBiPt with a (110) orientation disposed on the buffer layer, an intermediate layer disposed on the SOT layer, and a ferromagnetic layer disposed on the intermediate layer.

[0008] In another embodiment, the spintronic stack includes a buffer layer including HfN, Ta3W(110), TaW3(100), Ta3WN, TaW3N, MgO(100), TiN(100), or a bcc alloy including YPt; a spin-orbit torque (SOT) layer including (110) oriented YBiPt disposed on the buffer layer; an intermediate layer disposed on the SOT layer; a ferromagnetic layer disposed on the intermediate layer; and a capping layer disposed on the ferromagnetic layer.

[0009] In yet another embodiment, the spintronic stack includes at least one amorphous non-magnetic migration barrier layer comprising CoX, CoFeX, NiX, or NiFeX, where X is one of Ta, W, Hf, or Ge; and a buffer layer disposed on the at least one amorphous non-magnetic migration barrier layer, the buffer layer comprising: (1) an orientation-inducing template layer disposed on the at least one amorphous non-magnetic migration barrier layer, the orientation-inducing template layer comprising MgO(100), TiN(100), RuAl(100), or YPt; and (2) two or more orientation-inducing sublayers disposed on the orientation-inducing template layer, the two or more orientation-inducing sublayers each individually comprising a bcc alloy of Ta, W, Nb, V, and Hf, and a bcc alloy of Ta, W, Nb, V, or Hf. and a sublayer having two or more orientations, the sublayer comprising a material selected from the group consisting of fcc alloy nitride compounds of YBiPt and Hf; a spin-orbit torque (SOT) layer comprising YBiPt with a (110) orientation disposed on the buffer layer; an intermediate layer disposed on the SOT layer, the intermediate layer comprising a fist sublayer and a second sublayer, the first sublayer comprising a material selected from the group consisting of Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, and HfN, and the second sublayer being an oxide layer; a ferromagnetic layer disposed on the second sublayer of the intermediate layer; and a capping layer disposed on the ferromagnetic layer. [Brief explanation of the drawings]

[0010] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting its scope, as the present disclosure may admit of other equally effective embodiments.

[0011] [Figure 1] 1 is a schematic diagram of a particular embodiment of a magnetic media drive including a magnetic recording head with a spintronic device. [Figure 2] FIG. 2 is a partial cross-sectional side view of one particular embodiment of a read / write head having a spintronic device. [Figure 3A] 1A-1D are schematic diagrams of spintronic material stacks according to various embodiments. [Figure 3B] 1A-1D are schematic diagrams of spintronic material stacks according to various embodiments. [Figure 3C] 1A-1D are schematic diagrams of spintronic material stacks according to various embodiments. [Figure 3D] 1A-1D are schematic diagrams of spintronic material stacks according to various embodiments. [Figure 4A] Schematic of the lattice matching of YBiPt(110) to alpha Ta(110). [Figure 4B] 1 illustrates the out-of-plane XRD patterns of buffer layers with Ta3W(110) and TaW2(100) orientation in a TSM SOT stack with (110) orientation, according to one embodiment. [Figure 4C] 10 illustrates out-of-plane XRD patterns of various orientation-inducing templates, buffers, intermediate layers, and capping layers of a TSM stack with (110) orientation, according to another embodiment. [Figure 5A] 2 is a schematic cross-sectional view of a SOT device for use in a MAMR magnetic recording head, such as the MAMR magnetic recording head of the drive of FIG. 1 or other suitable magnetic media drive. [Figure 5B] FIG. 5B is a schematic MFS diagram of one particular embodiment of a portion of a MAMR magnetic recording head with the SOT device of FIG. 5A. [Figure 5C] FIG. 5B is a schematic MFS diagram of one particular embodiment of a portion of a MAMR magnetic recording head with the SOT device of FIG. 5A. [Figure 6] FIG. 1 is a schematic cross-sectional view of an SOT MTJ used as an MRAM device. [Figure 7] 1 illustrates a schematic diagram of a simplified deep neural network (DNN) or logic device, according to one embodiment. [Figure 8] 1 illustrates a spin orbital-spin orbital (SO-SO) device, according to one embodiment.

[0012] To facilitate understanding, the same reference numbers have been used, whenever possible, to designate identical elements common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific mention thereof. DETAILED DESCRIPTION OF THE INVENTION

[0013] Reference will be made below to embodiments of the present disclosure. However, it should be understood that the present disclosure is not limited to the specifically described embodiments. Instead, any combination of the following features and elements, whether associated with different embodiments or not, is contemplated to implement and practice the present disclosure. Furthermore, while embodiments of the present disclosure may achieve advantages over other possible solutions and / or over the prior art, whether or not a particular advantage is achieved by a given embodiment does not limit the present disclosure. Accordingly, the following aspects, features, embodiments, and advantages are merely exemplary and are not considered elements or limitations of the appended claims unless expressly recited in the claims. Similarly, references to "the present disclosure" should not be construed as a generalization of any inventive subject matter disclosed herein, and should not be considered elements or limitations of the appended claims unless expressly recited in the claims.

[0014] The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used in high-temperature applications (>300-600°C), such as magnetic sensors, logic designs, and memory cells (e.g., MRAM (magnetoresistive random access memory)). Such applications require materials to withstand high-temperature fabrication and in-use environments. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications.

[0015] In one embodiment, a spintronic stack is disclosed that includes a buffer layer including a layer having an orientation including Ta, Nb, HfN, Ta3W(110), TaW3(100), or YPt(110), a spin-orbit torque (SOT) layer including YBiPt with a (110) orientation disposed on the buffer layer, an intermediate layer disposed on the SOT layer, and a ferromagnetic layer disposed on the intermediate layer.

[0016] 1 is a schematic diagram of a particular embodiment of a magnetic media drive 100 including a magnetic recording head with a SOT MTJ device. Such a magnetic media drive may be a single drive or may comprise multiple drives. For illustrative purposes, a single disk drive 100 according to a particular embodiment is shown. As shown, at least one rotatable magnetic disk 112 is supported on a spindle 114 and rotated by a drive motor 118. The magnetic recording on each magnetic disk 112 is in the form of any suitable pattern of data tracks, such as an annular pattern of concentric data tracks (not shown) on the magnetic disk 112.

[0017] At least one slider 113 is positioned near the magnetic disk 112, with each slider 113 supporting one or more magnetic head assemblies 121 including a SOT device. As the magnetic disk 112 rotates, the slider 113 moves radially in and out above the disk surface 122 so that the magnetic head assemblies 121 can access different tracks on the magnetic disk 112 where desired data is written. Each slider 113 is attached to an actuator arm 119 by a suspension 115. The suspension 115 provides a slight spring force that urges the slider 113 toward the disk surface 122. Each actuator arm 119 is attached to an actuator means 127. The actuator means 127 shown in FIG. 2 can be a voice coil motor (VCM). The VCM includes a coil movable within a fixed magnetic field, and the direction and speed of the coil movement are controlled by motor current signals provided by a control unit 129.

[0018] During operation of disk drive 100, the rotation of magnetic disk 112 creates an air bearing between slider 113 and disk surface 122, which exerts an upward force, or lift, on slider 113. The air bearing thus counteracts the slight spring force of suspension 115 and supports slider 113 a small, substantially constant distance away from and slightly above disk surface 122 during normal operation.

[0019] The various components of disk drive 100 are operationally controlled by control signals generated by control unit 129, such as access control signals and internal clock signals. Control unit 129 typically includes logic control circuits, storage means, and a microprocessor. Control unit 129 generates control signals for controlling various system operations, such as drive motor control signals on line 123 and head position and seek control signals on line 128. The control signals on line 128 provide desired current profiles to optimally move and position slider 113 to the desired data track on disk 112. Write and read signals are communicated to and from the write and read heads on assembly 121 by recording channel 125.

[0020] The above description of a typical magnetic media drive, and the accompanying illustration of Figure 1, are for representational purposes only. It will become apparent that a magnetic media drive may include multiple media or disks and actuators, and each actuator may support several sliders.

[0021] 2 is a partial cross-sectional side view of one specific embodiment of a read / write head 200 having an SOT device. The read / write head 200 faces the magnetic medium 112. The read / write head 200 may correspond to the magnetic head assembly 121 shown in FIG. 1. The read / write head 200 includes a media facing surface (MFS) 212, such as a gas bearing surface, that faces the disk 112, a write head 210, and a magnetic read head 211. As shown in FIG. 2, the magnetic medium 112 moves past the write head 210 in the direction indicated by arrow 232, and the read / write head 200 moves in the direction indicated by arrow 234.

[0022] In some embodiments, the magnetic read head 211 is a magnetoresistive (MR) read head including an MR sensing element 204 positioned between MR shields S1 and S2. In other embodiments, the magnetic read head 211 is a magnetic tunnel junction (MTJ) read head including an MTJ sensing element 204 disposed between MR shields S1 and S2. The magnetic fields of adjacent magnetized regions in the magnetic disk 112 are detectable by the MR (or MTJ) sensing element 204 as recorded bits. Various embodiments of an SOT device may be incorporated into the read head 211 as the sensing element. Examples of SOT read heads are described in commonly assigned U.S. patent application Ser. No. 17 / 828,226, filed May 31, 2022, entitled "Topological Insulator Based Spin Torque Oscillator Reader," which is incorporated herein by reference. Further examples of SOT read heads are described in U.S. patent application Ser. No. 18 / 367,877, filed September 13, 2023, entitled "Non-Localized Spin Valve Reader Hybridized With Spin Orbit Torque Layer," and in co-pending patent applications Ser. No. 18 / 367,882, filed September 13, 2023, entitled "Non-Localized Spin Valve Multi-Free-Layer Reader Hybridized With Spin Orbit Torque Layers," which are incorporated herein by reference.

[0023] The write head 210 includes a center or main pole 220, a leading shield 206, a trailing shield 240, an optional spin-orbit torque (SOT) device 250, and a coil 218 that excites the main pole 220. The coil 218 may have a “pancake” configuration that wraps around the back contact between the main pole 220 and the trailing shield 240 instead of the “spiral” configuration shown in FIG. 2. For example, if included to achieve the Microwave Assisted Magnetic Recording (MAMR) effect, the SOT device 250 is formed in a gap 254 between the main pole 220 and the trailing shield 240. In certain embodiments, the read / write head 200 additionally includes a mechanism (not shown) for assisting heat-assisted magnetic recording (HAMR), which may include a waveguide coupled to a light source and a near field transducer (NFT) positioned adjacent to the main pole 220 and coupled to the waveguide for converting the delivered light into a heated spot on the medium.

[0024] The main pole 220 includes a trailing taper 242 and a leading taper 244. The trailing taper 242 extends from a position recessed from the MFS 212 to the MFS 212. The leading taper 244 extends from a position recessed from the MFS 212 to the MFS 212. The trailing taper 242 and the leading taper 244 may have the same degree of taper, where the degree of taper is measured relative to the longitudinal axis 260 of the main pole 220. In some embodiments, the main pole 220 does not include the trailing taper 242 and the leading taper 244. Instead, the main pole 220 includes a trailing side (not shown) and a leading side (not shown), where the trailing side and the leading side are substantially parallel. The main pole 220 may be a magnetic material such as an FeCo alloy. The leading shield 206 and the trailing shield 240 may include a magnetic material such as a NiFe alloy.

[0025] 3A-3D illustrate spintronic stacks 300a-300d, respectively, according to various embodiments. Each spintronic stack 300a-300d may be utilized in magnetic media drive 100 of FIG. 1, the reader and / or writer portion of head 200 of FIG. 2, or other suitable magnetic media drives. Each spintronic stack 300a-300d may be utilized, for example, as a memory cell element in an MRAM or as a logic cell, as disclosed in FIGS. 6-7. Aspects of spintronic stacks 300a-300d may be used in combination with each other.

[0026] 3A is a schematic diagram of a spintronic stack 300a according to one embodiment. The spintronic stack 300a includes an amorphous layer 302a, a buffer layer 302b, an SOT layer 304 disposed on the buffer layer 302b, an optional intermediate layer 306 disposed on the SOT layer 304, a ferromagnetic (FM) layer 308 disposed on the intermediate layer 306, and a cap layer 310 disposed on the FM layer 308. Although the FM layer 308 is shown on the SOT layer 304, in some embodiments, the SOT layer 304 may be on the FM layer 308. In such embodiments, the positions of the SOT layer 304 and the FM layer 308 are swapped.

[0027] The stack 300a includes an amorphous layer 302a that may have high resistivity properties and may include NiTa, NiW, NiFeTa, NiFeW, CoFeTa, or NiFeGe. In some embodiments, the amorphous layer 302a may be doped with nitrogen. This layer may be disposed on other seed or substrate layers.

[0028] The buffer layer 302b includes multiple layers, such as three sub-layers. In one embodiment, the first sub-buffer layer 302b-1 and the second sub-buffer layer 302b-2 each individually include Ta3W(110), TaW3(100), Ta3WN, TaW3N, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, MgO(100), TiN(100), or YPt(110), each of which provides a (110) orientation to the third sub-buffer layer 302b-3 and the SOT layer 304. The first sub-buffer layer 302b-1 may have a thickness of about 10 Å to about 20 Å, and the second sub-buffer layer 302b-2 may have a thickness of about 10 Å to about 30 Å. In such an embodiment, the third sub-buffer layer 302b-3 includes HfN, Ta3W(110), TaW3(100), Ta3WN, TaW3N, or YPt(110). The third sub-buffer layer 302b-3 may include HfN, Ta3WN, or TiN, which have high resistivity. The third sub-buffer layer 302b-3 has a thickness of about 10 Å to about 30 Å.

[0029] The first, second, and third sub-buffer layers 302b-1, 302b-2, and 302b-3 each contain a different material. For example, the first sub-buffer layer 302b-1 may contain MgO or TiN, the second sub-buffer layer 302b-2 may contain Ta3W or Ta3WN, and the third sub-buffer layer 302b-3 may contain HfN or TiN. As another example, the first sub-buffer layer 302b-1 may contain YPt, TaW3, or TaW3N, the second sub-buffer layer 302b-2 may contain Ta3W, Ta3WN, or HfN, and the third sub-buffer layer 302b-3 may contain HfN, TiN, Ta3W, or Ta3WN.

[0030] In one embodiment, the intermediate layer 306 includes Ta (e.g., alpha Ta) or Nb (a material similar to or the same as the secondary buffer layer 302b-3) and is disposed on the SOT layer 304. In another embodiment, the intermediate layer 306 includes Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, or HfN, which are high-resistivity materials that provide shunt blocking for the FM layer 308. In some embodiments, the intermediate layer 306 may also include MgO, such as NiFeGe / MgO, NiFeGeN / MgO, Ta3WN / MgO, or HfN / MgO. The intermediate layer 306 may be a multilayer structure, as described below in FIGS. 3C-3D. The intermediate layer 306 inherits its (110) orientation from the layer below.

[0031] FM layer 308, disposed on intermediate layer 306, comprises Co, CoFeB, NiFe, CoFe, CoFeN, CoFeHf, or other suitable ferromagnetic material or alloy. Finally, cap layer 310 may be multiple layers disposed on FM layer 308 and comprises: (1) a material selected from the group consisting of high resistivity amorphous SiN, Al2O3, SiO2, NiFeTa, NiTa, NiW, NiFeW, NiFeGe, HfN, and NiFeGeN, or (2) a high resistivity crystalline ceramic material such as a TiO layer, MgO layer, or MgTiO layer, or (3) lower resistivity transition heavy metals and their alloys such as Pt, Co, Cu, Ni, Ru, Ta, Cr, Au, and Rh when used in combination with a higher resistivity cap layer, or (4) other non-magnetic materials, or combinations thereof. The SOT layer 304 comprises a topological semi-material (TSM), such as YBiPt(110).

[0032] FIG. 3B is a schematic diagram of a spintronic stack 300b according to one embodiment. Spintronic stack 300b is similar to stack 300a, except that the buffer layer includes different sublayers 302b-2 and materials. Amorphous layer 302a is generally an amorphous or nanocrystalline migration-suppressing layer. First sublayer 302b-1 is an orientation-inducing template layer including annealed YPt, fcc MgO, TiN, or a B2 alloy of RuAl. Second sublayer 302b-2a is generally a bcc alloy including an element selected from the group consisting of Ta, Hf, W, Nb, V, and Zr, or a bcc nitride alloy that forms an fcc compound, such as HfN or TaWN. Sublayer 302b-3, sublayer 302-2b, and sublayer 302b-2a are of similar materials, including bcc alloys or nitride bcc alloys that form an fcc phase with a larger lattice parameter. The order of these layers is chosen to reduce strain while increasing the layer resistance or improve migration in and out of the TSM SOT layer 304. Together, they form a strain-reducing layer that facilitates (110) oriented growth as described above, enabling the goal of growing a highly oriented (110) YBiPt Heusler film.

[0033] 3C is a schematic diagram of a spintronics stack 300c according to one embodiment. The spintronics stack 300c is similar to the stack 300a of FIG. 3A. However, the buffer layer 302b includes two sublayers 302b-1 and 302b-2, and the intermediate layer 306 is a multilayer structure. The first sublayer 302b-1 of the buffer layer 302b can include Ta3W(110), TaW3(100), Ta3W2N, TaW3N, MgO(100), TiN(100), or YPt(110), each of which provides a (110) orientation to the second sub-buffer layer 302b-2 and the SOT layer 304. The second sub-buffer layer 302b-2 includes HfN, Ta3W(110), Ta3WN, TaW3(100), TaW3N, or YPt(110). In one embodiment, the second sub-buffer layer 302b-2 includes HfN, which has high resistivity. The first sub-buffer layer 302b-1 may have a thickness of about 10 Å to about 20 Å, and the second sub-buffer layer 302b-2 may have a thickness of about 10 Å to about 30 Å.

[0034] The first and second sub-buffer layers 302b-1 and 302b-2 may each include a different material. For example, the first sub-buffer layer 302b-1 may include MgO or TiN, and the second sub-buffer layer 302b-2 may include Ta3W or TaW3. As another example, the first sub-buffer layer 302b-1 may include YPt, TaW3, or TaW3N, and the second sub-buffer layer 302b-2 may include Ta3W, Ta3WN, or HfN.

[0035] The intermediate layer 306 includes two sub-interlayers 306a and 306b. In some embodiments, the first sub-layer 306a is a metal protective layer, and the second sub-layer 306b is an oxide layer. The first sub-interlayer 306a may include HfN, Ta3W(110), TaW3(100), or YPt(110). The second sub-interlayer 306b may include MgO, TiO, MgTiO, HfN, Ta3W(110), TaW3(100), or YPt(110). The first sub-interlayer 306a may have a thickness of about 5 Å to about 10 Å, for example, about 8 Å, and the second sub-interlayer 306b may have a thickness of about 1 Å to about 7 Å, for example, about 4 Å.

[0036] The first and second sub-interlayers 306a and 306b each include Ta3W(110), TaW3(100), Ta3W2N, TaW2N, YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, or HfN. In some embodiments, the first and second sub-interlayers 306a and 306b may also include MgO, such as NiFeGe / MgO, NiFeGeN / MgO, Ta3WN / MgO, or HfN / MgO. For example, the first sub-interlayer 306a may include Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, or HfN, and the second sub-interlayer 306b may include Ta3W or TaW3.

[0037] FIG. 3D is a schematic diagram of a spintronic stack 300d according to one embodiment. The spintronic stack 300d is similar to the stack 300c of FIG. 3C. However, the buffer layer 302b is a single layer, and the intermediate layer 306 is a multilayer structure. The buffer layer 302b may include HfN, Ta3W(110), TaW3(100), Ta3W2N, TaW2N, or YPt(110). The buffer layer 302b may have a thickness of about 30 Å to about 50 Å. The first sub-interlayer 306a of the intermediate layer 306 may include HfN, Ta3W(110), TaW3(100), or YPt(110). The second sub-interlayer 306b may include MgO, HfN, Ta3W(110), TaW3(100), or YPt(110). The first sub-intermediate layer 306a may have a thickness of about 10 Å to about 20 Å, and the second sub-intermediate layer 306b may have a thickness of about 20 Å to about 30 Å.

[0038] The first and second sub-interlayers 306a, 306b each comprise a different material. In some embodiments, the first sub-layer 306a is a metal protective layer, and the second sub-layer 306b is an oxide layer. For example, the first sub-interlayer 306a may comprise HfN, Ta3W, or TaW3, and the second sub-interlayer 306b may comprise YPt, MgO, TiO, or MgTiO.

[0039] FIG. 4A is a schematic diagram 400 of the lattice match between YBiPt(110) and alpha Ta(110), a highly oriented sublayer of the buffer layer described above. The YBiPt molecules shown in the diagram are marked as Y(202), Bi(204), and Pt(206). YBiPt(110) has a surface of 6.64 Å (angstroms) × 9.39 Å, and the half dimensions of this (110) surface are 3.32 Å × 4.69 Å. Thus, alpha Ta(110), with dimensions of 3.31 Å × 4.675 Å (illustrated diagram 408), provides an excellent lattice-matched film. Table 410 lists the dimensions of other materials described above as usable in various buffer and / or interlayer embodiments.

[0040] 4B illustrates an out-of-plane XRD pattern of buffer layers with Ta3W (110) and TaW2 (100) orientations in a TSM SOT stack with a (110) orientation, according to one embodiment. As shown in the graph, a buffer layer including Ta3W can provide a (110) orientation to an SOT layer, such as SOT layer 304 of FIGS. 3A-3D. A buffer layer including TaW2 can provide a (100) orientation to SOT layer 304.

[0041] 4C illustrates out-of-plane XRD patterns of various orientation-guiding templates, buffers, intermediate layers, and capping layers of a TSM stack having a (110) orientation according to another embodiment. Line 402 represents a stack including a 30 Å thick MgO layer, a 20 Å thick TaW2 layer, a 100 Å thick YPtBi layer, a 6 Å thick CoFe layer, and a 30 Å thick NiFeGe layer. Line 404 represents a stack including a 10 Å thick CoFeTaN layer, a 10 Å thick YPt layer, a 30 Å thick HfN layer, a 10 Å thick Ta3W2 layer, a 100 Å thick YPtBi layer, a 10 Å thick CoFeB layer, a 10 Å thick NiFeGe layer, and a 40 Å thick HfN layer. Line 406 represents a stack including a 10 Å thick YPt layer, a 30 Å thick HfN layer, a 10 Å thick Ta3W2 layer, a 100 Å thick YPtBi layer, a 6 Å thick CoFe layer, a 10 Å thick NiFeGe layer, and a 20 Å thick HfN layer. Line 408 represents a stack including a 10 Å thick CoFeTaN layer, a 30 Å thick MgO layer, a 20 Å thick Ta3W2 layer, a 100 Å thick YPtBi layer, a 10 Å thick CoFeB layer, a 5 Å thick NiAlGeN layer, a 10 Å thick NiFeGe layer, and a 50 Å thick HfN layer. Line 410 represents a stack including a 10 Å thick CoFeTaN layer, a 10 Å thick YPt layer, a 30 Å thick Ta3W2N layer, a 100 Å thick YPtBi layer, a 10 Å thick CoFeB layer, a 10 Å thick NiFeGe layer, and a 40 Å thick HfN layer.

[0042] It should be noted that while FIGS. 3A-3D provide exemplary stacks of a single pair of SOT and FM layers in various sensor, memory, and logic applications, other such embodiments may include stacks including different numbers of SOT and FM layers, and the buffer and intermediate layers described above for promoting the growth characteristics discussed may be used as appropriate to support those different embodiments.

[0043] FIG. 5A is a schematic cross-sectional view of an SOT device 500 for use in a MAMR magnetic recording head, such as the MAMR magnetic recording head of drive 100 of FIG. 1 or other suitable magnetic media drive. SOT device 500 includes an SOT layer 304 formed on a buffer layer 302b formed on a substrate 501, such as SOT layer 304 and buffer layer 302b of FIGS. 3A-3D. Thus, SOT layer 304 may include YPtBi with a (110) orientation. A spin torque layer (STL) 570 is formed on top of SOT layer 304. STL 570 includes one or more layers of a ferromagnetic material, such as CoFe, CoIr, NiFe, and a CoFeX alloy (where X=B, Ta, Re, or Ir).

[0044] In a particular embodiment, the current shunt blocking layer 560 is disposed between the SOT layer 304 and the STL 570. The current shunt blocking layer 560 reduces current flow from the SOT layer 304 to the STL 570, but allows spin-orbit coupling between the SOT layer 304 and the STL 570. In a particular embodiment, the current shunt blocking layer 560 comprises a magnetic material that provides greater spin-orbit coupling between the SOT layer 304 and the STL 570 than a non-magnetic material. In a particular embodiment, the current shunt blocking layer 560 comprises a magnetic material such as FeCo, FeCoM, FeCoMO, FeCoMMeO, an FeCoM / MeO stack, an FeCoMNiMnMgZnFeO, an FeCoM / NiMnMgZnFeO stack, multiple layers / stacks thereof, or combinations thereof, where M is one or more of B, Si, P, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni. Me is one or more of Si, Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr. In certain embodiments, the current shunt blocking layer 560 is formed to a thickness of about 10 Å to about 100 Å. In certain aspects, a current shunt blocking layer 560 having a thickness greater than 100 Å may reduce spin-orbit coupling between the SOT layer 304 and the STL 570. In certain aspects, a current shunt blocking layer having a thickness less than 10 Å may not sufficiently reduce current flow from the SOT layer 304 to the STL 570.

[0045] In one particular embodiment, additional layers, such as a spacer layer 580 and a pinned layer 590, are formed over the STL 570. The pinned layer 590 can partially pin the STL 570. The pinned layer 590 includes a single layer or multiple layers of PtMn, NiMn, IrMn, IrMnCr, CrMnPt, FeMn, other antiferromagnetic materials, or combinations thereof. The spacer layer 580 includes a single layer or multiple layers of magnesium oxide, aluminum oxide, other non-magnetic materials, or combinations thereof.

[0046] 5B-5C are schematic MFS diagrams of one particular embodiment of a portion of a MAMR magnetic recording head 210 having the SOT device 500 of FIG. 5A. The MAMR magnetic storage head 210 may be the magnetic storage head of FIG. 2 or another suitable magnetic storage head in the drive 100 of FIG. 1, or another suitable magnetic media drive, such as a tape drive. The MAMR magnetic storage head 210 includes, in the track direction, a main pole 220 and a trailing shield 240. The SOT device 500 is disposed in the gap between the main pole and the trailing shield 240.

[0047] In operation, charge current through the SOT layer 304, which acts as a spin Hall layer, generates a spin current in the YPtBi layer. Spin-orbit coupling between the YPtBi layer and the spin torque layer (STL) 570 causes switching or precession of the magnetization of the STL 570 due to spin-orbit coupling of the spin current from the SOT layer 304. The switching or precession of the magnetization of the STL 570 can generate an auxiliary AC magnetic field to the write field. SOT-based energy-assisted magnetic storage heads have several times greater power efficiency than MAMR magnetic storage heads based on spin transfer torque. As shown in FIG. 5B, the easy axis of the magnetization direction of the STL 570 is perpendicular to the MFS due to the shape anisotropy of the STL 570, the pinned layer 590 in FIG. 5A, and / or the hard bias element proximate to the STL 570. As shown in FIG. 5C, the easy axis of magnetization of STL 570 is parallel to the MFS from the shape anisotropy of STL 570, from pinned layer 590 in FIG. 5A, and / or from a complex bias element adjacent to STL 570.

[0048] 6 is a schematic cross-sectional view of an SOT MTJ 601 used as an MRAM device 600. The MRAM device 600 includes a reference layer (RL) 610, a spacer layer 620 on the RL 610, a recording layer 630 on the spacer layer 620, a buffer layer 302b on a current shunt blocking layer 640 on the recording layer 630, and an SOT layer 304 on the buffer layer 302b. The SOT layer 304 and the buffer layer 302b may be the SOT layer 304 and the buffer layer 302b of FIGS. 3A-3D. Thus, the SOT layer 304 may include YPtBi having a (110) orientation.

[0049] The RL 610 includes a single layer or multiple layers of CoFe, other ferromagnetic materials, and combinations thereof. The spacer layer 620 includes a single layer or multiple layers of magnesium oxide, aluminum oxide, other dielectric materials, and combinations thereof. The recording layer 630 includes a single layer or multiple layers of CoFe, NiFe, other ferromagnetic materials, and combinations thereof.

[0050] As described above, in a particular embodiment, the current shunt blocking layer 640 is disposed between the buffer layer 302b and the recording layer 630. The current shunt blocking layer 640 reduces current flow from the SOT layer 304 to the recording layer 630. The current shunt blocking layer 640 still allows spin-orbit coupling between the SOT layer 304 and the recording layer 630. For example, writing to an MRAM device may be enabled by spin-orbit coupling between the TSM layer and the recording layer 630, which enables switching of the magnetization of the recording layer 630 by spin-orbit coupling of the spin current from the SOT layer 304. In a particular embodiment, the current shunt blocking layer 640 includes a magnetic material that provides greater spin-orbit coupling between the SOT layer 304 and the recording layer 630 than a non-magnetic material. In a particular embodiment, the current shunt blocking layer 640 comprises a magnetic material of FeCoM, FeCoMO, FeCoMMeO, FeCoM / MeO stack, FeCoMNiMnMgZnFeO, FeCoM / NiMnMgZnFeO stack, multiple layers / stacks thereof, or combinations thereof, where M is one or more of B, Si, P, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni, and Me is Si, Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr.

[0051] 6 may include other layers, such as pinning layers, pinning structures (e.g., synthetic antiferromagnetic (SAF) pinning structures), electrodes, gates, and other structures. MRAM devices other than the structure of FIG. 6 can be formed utilizing an SOT layer 304 on a buffer layer 302b to form an SOT MTJ 601.

[0052] FIG. 7 illustrates a schematic diagram of a simplified deep neural network (DNN) or logic cell 700, according to one embodiment. The DNN 700 includes multiple cells or neural nodes 702a, 702b, 702c, 702d, and 702e (collectively referred to herein as neural nodes 702). Each neural node 702 includes multiple spin-orbit-spin-orbit (SO-SO) cells, each of which is a three-terminal device including a control or weight, an input, and an output. Each SO-SO cell may comprise one or more of the spintronics stacks 300a-300d of FIGS. 3A-3D. An input current (input 1, input 2, input n) is applied to the first input layer (i) of the neural node 702a and multiplied by the control or weight.

[0053] The output of each neural node 702a in the input layer is then output to each neural node 702b in the first hidden layer (h1) of the DNN 700 as an input for each neural node 702b, and each input received at each neural node 702b is then multiplied by the respective weight of each neural node 702b's respective input. The weights may conceptually represent the strength of the connection between a neural node (e.g., neural node 702a) in one layer and another neural node (e.g., neural node 702b) in the next layer. The results of the multiplications are summed together and sent to a nonlinear activation function (not shown here), such as a step or rectified linear unit (ReLU) function, which determines the final output for that neural node 702b. This process sequence of multiplications, additions, and activation functions is then repeated in various layers h2, h3, etc. throughout the DNN. Although three hidden layers are shown, the DNN 700 may comprise any number of hidden layers. Finally, the output of the last hidden layer (here, the third hidden layer) is output as the final result to the output neural node 702e of the output layer (o).

[0054] FIG. 8 illustrates a spin-orbit-spin-orbit (SO-SO) device 800, according to one embodiment. The SO-SO device 800 may be utilized within the DNN 700 of FIG. 7, such as an SO-SO cell. The various layers of the SO-SO device 800 are not drawn to scale and are for illustrative purposes only. The SO-SO device may be referred to herein as an SOT device. Multiple SO-SO devices 800 may be configured to function as the neural nodes 102 of FIG. 7. Thus, a collection of SO-SO devices may be configured to represent layers (i, h1, h2, h3, o) of the DNN of FIG. 7.

[0055] In some embodiments, the SO-SO device 800 comprises a seed layer 802, a first spin-orbit torque (SOT) layer 304-1 (SOT1) disposed on the seed layer 802, a first intermediate layer 306-1 disposed on the first SOT layer 304-1, a ferromagnetic (FM) layer 308 disposed on the first intermediate layer 306-1, an oxide layer 810 (e.g., an MgO layer) disposed on the FM layer 308, a second intermediate layer 306-2 disposed on the oxide layer 810, a second SOT layer 304-2 (SOT2) disposed on the second intermediate layer 306-2, a buffer layer 302b disposed on the second SOT layer 304-2, and a cap layer 818 disposed on the buffer layer 302b. The oxide layer 810 may include other materials such as oxides of Ti, V, Cr, Mn, Fe, Ni, Zr, nitrides of Sc, Ti, V, Cr, Fe, Zr, Ta, Hf, W, carbides of Sc, Ti, V, Zr, Ta, Hf, W, and alloy combinations thereof.

[0056] The first interlayer 306-1 and the second interlayer 306-2 may each individually be the interlayer 306 of Figures 3A-3D. The butter layer 302 may each individually be the buffer layer 302b of Figures 3A-3D. The SOT1 304-1 and the SOT2 304-2 may each individually be the SOT layer 304 of Figures 3A-3D. The FM layer 308 may each individually be the FM layer 308 of Figures 3A-3D.

[0057] In some embodiments, the SO-SO device 800 comprises three terminals or interconnects. The first SOT layer 304-1 is coupled to interconnect or terminal 1. The second SOT layer 304-2 is coupled to interconnect or terminal 3, which is coupled to the first SOT layer 304-1 of the second SO-SO device through terminal 1. An input current is applied to terminal 2 (input X to the neural node). n The SO-SO devices 800-800 can be arranged to build various circuits.

[0058] By using the above-mentioned materials for the buffer layer and / or sub-buffer layer, the SOT layer can be grown in the (110) orientation while maintaining high resistivity. Furthermore, by using the above-mentioned materials for the intermediate layer and / or sub-intermediate layer, the intermediate layer can have high resistivity and function as a shunt blocking layer.

[0059] In one embodiment, the spintronic stack comprises a buffer layer including a layer having an orientation including Ta or Nb, a spin-orbit torque (SOT) layer including YBiPt with a (110) orientation disposed on the buffer layer, an intermediate layer disposed on the SOT layer, and a ferromagnetic layer disposed on the intermediate layer.

[0060] The buffer further includes a first sublayer including Ta, a second sublayer including Cr disposed on the first sublayer, and a third sublayer including Ta or Nb disposed on the second sublayer, which is an textured layer. The Ta in the first sublayer is beta-Ta, and the Ta in the third sublayer is alpha-Ta. The beta-Ta in the third sublayer is thicker than the alpha-Ta in the first sublayer. The buffer further includes a first sublayer including Ta, a second sublayer disposed on the first sublayer and including Cr, V, Mo, or an alloy thereof, a third sublayer disposed on the second sublayer and including Mo, W, WTi, or an alloy thereof, and a fourth sublayer disposed on the third sublayer, which is an textured layer including Ta or Nb. The Ta in the first sublayer is beta-Ta, and the Ta in the fourth sublayer is alpha-Ta. The beta Ta of the fourth sublayer is thicker than the alpha Ta of the first sublayer. The spintronics stack further comprises an amorphous layer comprising CoX, CoFeX, NiX, or NiFeX, where X is one or more of Ta, W, Hf, and Ge, the amorphous layer being nitrided, and the buffer layer being disposed on the amorphous layer. The intermediate layer comprises Ta or Nb. The memory cell comprises the spintronics stack. The logic cell comprises the spintronics stack. The magnetic sensor comprises the spintronics stack.

[0061] In another embodiment, a spintronic stack includes a buffer layer including Ta3W(110), TaW3(100), Ta3WN, TaW3N, MgO(100), TiN(100), or YPt; a spin-orbit torque (SOT) layer including (110)-oriented YBiPt disposed on the buffer layer; an intermediate layer disposed on the SOT layer; and a ferromagnetic layer disposed on the intermediate layer.

[0062] The buffer layer is a multilayer stack. The buffer layer further includes a first sublayer including Ta3W(110), TaW3(100), or YPt(110) and a second sublayer including HfN, Ta3W(110), TaW3(100), or YPt(110). The second sublayer includes HfN, and the first and second sublayers include different materials. The buffer layer further includes a third sublayer disposed between the first and second sublayers, the third sublayer including Ta3WN(110), TaW3N(100), TiN, or YPt(110). The intermediate layer includes one or more materials selected from the group consisting of HfN, Ta3W(110), TaW3(100), NiFeGe, NiAlGe, or YPt(110), MgO, TiN, TiO, MgTiO, or MgTiN. The memory cell comprises a spintronics stack. The logic cell comprises a spintronics stack. The magnetic sensor comprises a spintronics stack.

[0063] In yet another embodiment, a spintronic stack includes at least one amorphous non-magnetic migration barrier layer comprising CoX, CoFeX, NiX, or NiFeX, where X is one of Ta, W, Hf, or Ge; and a buffer layer disposed on the at least one amorphous non-magnetic migration barrier layer, the buffer layer comprising: (1) an orientation-inducing template layer comprising MgO(100), TiN(100), RuAl(100), or YPt disposed on the at least one amorphous non-magnetic migration barrier layer; and (2) two or more orientation-inducing sublayers disposed on the orientation-inducing template layer, the two or more orientation-inducing sublayers each independently selected from the group consisting of Ta, W, Nb, V, and Hf. a buffer layer including a sublayer having two or more orientations, the sublayer including a bcc alloy of Ta, W, Nb, V, and Hf, or an fcc alloy nitride compound of Ta, W, Nb, V, and Hf; a spin-orbit torque (SOT) layer including YBiPt with a (110) orientation disposed on the buffer layer; an intermediate layer disposed on the SOT layer, the intermediate layer including a fist sublayer and a second sublayer, the first sublayer including a material selected from the group consisting of Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, and HfN, and the second sublayer being an oxide layer; a ferromagnetic layer disposed on the second sublayer of the intermediate layer; and a capping layer disposed on the ferromagnetic layer.

[0064] The first sublayer of the sublayers having two or more orientations includes Ta3W(110), TaW3(100), or YPt(110), and the second sublayer of the sublayers having two or more orientations includes HfN, Ta3W(110), TaW3(100), or YPt(110). The buffer layer further includes a third sublayer disposed between the first and second sublayers, the third sublayer including Ta3WN(110), TaW3N(100), TiN, or YPt(110), and the third sublayer includes a material different from the first and second sublayers. The intermediate layer includes two or more sub-interlayers. The first sub-interlayer includes HfN, Ta3W(110), TaW3(100), or YPt(110), and the second sub-interlayer includes MgO, HfN, Ta3W(110), TaW3(100), or YPt(110). The interlayer further includes a third sub-interlayer, and the third sub-interlayer includes MgO, HfN, Ta3W(110), TaW3(100), or YPt(110), and the first sub-interlayer, the second sub-interlayer, and the third sub-interlayer each include a different material. The interlayer further includes one or more of TiN, TiO, MgTiO, or MgTiN. The memory cell includes a spintronics stack. The logic cell includes a spintronics stack. The magnetic sensor includes a spintronics stack.

[0065] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is determined by the following claims.

Claims

1. It is a spintronics stack, A buffer layer comprising an orientation layer containing Ta or Nb, A spin-orbit torque (SOT) layer containing YBiPt in the (110) orientation is disposed on the buffer layer, An intermediate layer disposed on the spin-orbit torque layer, A spintronics stack comprising a ferromagnetic layer disposed on the aforementioned intermediate layer.

2. The aforementioned buffer layer The first sublayer containing Ta, Displaced on the first sublayer, a second sublayer containing Cr, The spintronics stack according to claim 1, further comprising: a third sublayer disposed on the second sublayer, which is the oriented layer comprising Ta or Nb.

3. The spintronics stack according to claim 2, wherein the Ta of the first sublayer is beta Ta, and the Ta of the third sublayer is alpha Ta.

4. The spintronics stack according to claim 3, wherein the beta Ta of the third sublayer is thicker than the alpha Ta of the first sublayer.

5. The aforementioned buffer layer The first sublayer containing Ta, Displaced on the first sublayer, a second sublayer comprising Cr, V, Mo, or an alloy thereof, Displaced on the second sublayer is a third sublayer comprising Mo, W, WTi, or an alloy thereof, The spintronics stack according to claim 1, further comprising: a fourth sublayer disposed on the third sublayer, which is the oriented layer comprising Ta or Nb.

6. The spintronics stack according to claim 5, wherein the Ta of the first sublayer is beta Ta, and the Ta of the fourth sublayer is alpha Ta.

7. The spintronics stack according to claim 5, wherein the beta Ta of the fourth sublayer is thicker than the alpha Ta of the first sublayer.

8. The spintronics stack according to claim 1, further comprising an amorphous layer containing CoX, CoFeX, NiX, or NiFeX, wherein X is one or more of Ta, W, Hf, and Ge, the amorphous layer is nitrogenized, and a buffer layer is disposed on the amorphous layer.

9. The spintronics stack according to claim 1, wherein the intermediate layer comprises Ta or Nb.

10. A memory cell comprising the spintronics stack described in claim 1.

11. A logic cell comprising the spintronics stack described in claim 1.

12. A magnetic sensor comprising the spintronics stack described in claim 1.

13. It is a spintronics stack, HfN, Ta ３ W(110), TaW ３ (100), Ta ３ WN, TaW ３ A buffer layer containing N, MgO(100), TiN(100), or YPt, A spin-orbit torque (SOT) layer containing YBiPt in the (110) orientation is disposed on the buffer layer, An intermediate layer disposed on the spin-orbit torque layer, A spintronics stack comprising a ferromagnetic layer disposed on the aforementioned intermediate layer.

14. The spintronics stack according to claim 13, wherein the buffer layer is a multilayer stack.

15. The buffer layer Ta ３ W(110), TaW ３ (100), or a first sublayer including YPt(110), HfN, Ta ３ W(110), TaW ３ The spintronics stack according to claim 13, further comprising a second sublayer comprising (100) or YPt(110).

16. The spintronics stack according to claim 15, wherein the second sublayer contains HfN, and the first sublayer and the second sublayer contain different materials.

17. The buffer layer further includes a third sub-layer disposed between the first sub-layer and the second sub-layer, and the third sub-layer is Ta ３ WN(110), TaW ３ N(100), TiN, or YPt(110), and the spintronics stack according to claim 15.

18. The aforementioned intermediate layer is HfN, Ta ３ W(110), TaW ３ The spintronics stack according to claim 13, comprising one or more materials selected from the group consisting of (100), NiFeGe, NiAlGe, or YPt(110), MgO, TiN, TiO, MgTiO, or MgTiN.

19. A memory cell comprising the spintronics stack described in claim 13.

20. A logic cell comprising the spintronics stack described in claim 13.

21. A magnetic sensor comprising the spintronics stack described in claim 13.

22. It is a spintronics stack, An amorphous layer containing CoX, CoFeX, NiX, or NiFeX, where X is one or more of Ta, W, Hf, and Ge, A buffer layer disposed on the amorphous layer and The buffer layer includes, (1) An orientation-inducing template layer disposed on the amorphous layer, comprising MgO(100), TiN(100), RuAl(100), or YPt, (2) A buffer layer comprising two or more oriented sublayers disposed on the orientation induction template layer, wherein each of the two or more oriented sublayers comprises a material selected from the group consisting of a bcc alloy of Ta, W, Nb, V, and Hf, and an fcc alloy nitride compound of Ta, W, Nb, V, and Hf, A spin-orbit torque (SOT) layer containing YBiPt in the (110) orientation is disposed on the buffer layer, An intermediate layer disposed on the spin orbit torque layer, wherein the intermediate layer includes a first sublayer and a second sublayer, and the first sublayer is Ta ３ WN, TaW ３ N, Ta ３ W(110), TaW ３ The intermediate layer comprises a material selected from the group consisting of (100), YPt(110), NiFeGenN, NiAlN, NiAl, NiFeGe, NiAlGe, and HfN, wherein the second sublayer is an oxide layer. A ferromagnetic layer disposed on the second sublayer of the intermediate layer, A spintronics stack comprising a capping layer disposed on the ferromagnetic layer.

23. Of the two or more oriented sublayers, the first sublayer is Ta ３ W(110), TaW ３ (100), or YPt(110), wherein the second sublayer among the two or more oriented sublayers is HfN, Ta ３ W(110), TaW ３ The spintronics stack according to claim 22, comprising (100), or YPt(110).

24. The buffer layer further includes a third sublayer disposed between the first sublayer and the second sublayer, wherein the third sublayer is Ta ３ WN (110), TaW ３ The spintronics stack according to claim 23, comprising N(100), TiN, or YPt(110), wherein the third sublayer comprises a material different from the first sublayer and the second sublayer.

25. The spintronics stack according to claim 22, wherein the intermediate layer includes two or more sub-intermediates.

26. The first sub-intermediate layer is HfN, Ta ３ W(110), TaW ３ (100), or YPt(110), the second subintermediate layer is MgO, HfN, Ta ３ W(110), TaW ３ The spintronics stack according to claim 25, comprising (100), or YPt(110).

27. The intermediate layer further includes a third sub-intermediate layer, the third sub-intermediate layer being composed of MgO, HfN, and Ta ３ W(110), TaW ３ The spintronics stack according to claim 26, comprising (100) or YPt(110), wherein the first subintermediate layer, the second subintermediate layer, and the third subintermediate layer each comprise a different material.

28. The spintronics stack according to claim 26, wherein the intermediate layer further comprises one or more of TiN, TiO, MgTiO, or MgTiN.

29. A memory cell comprising the spintronics stack described in claim 22.

30. A logic cell comprising the spintronics stack described in claim 22.

31. A magnetic sensor comprising the spintronics stack described in claim 22.

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