Transport apparatus, semiconductor process device, and wafer transport method

Abstract

The present application discloses a transfer device, a semiconductor process device, and a wafer transfer method, which are related to the semiconductor field. The transfer device includes a suction finger, a heating element, a first temperature measuring element, a second temperature measuring element, and a control element, the suction finger has a suction portion, the heating element and the first temperature measuring element are both mounted on the suction portion, the second temperature measuring element is mounted on the suction finger and spaced apart from the suction portion, and the control element is electrically connected to the heating element, the first temperature measuring element, and the second temperature measuring element, and when the temperature measured by the second temperature measuring element is higher than a predetermined temperature, the control element controls the heating temperature of the heating element relative to the suction portion based on the temperature difference between the first and second temperature measuring elements so that the temperature difference is within a predetermined temperature difference range.

Description

[Technical Field]

[0001] The present application belongs to the technical field of semiconductors, and more particularly to a transport apparatus, a semiconductor process device, and a wafer transport method. [Background technology]

[0002] In the transfer module at the tip of the device, the main wafer transfer member is the manipulator, whose main task is to accurately transfer the wafer to the process module. Common manipulator wafer removal methods include suction, mechanical clamping, and friction. The appropriate wafer removal method is selected based on the size, material, and transfer environment (vacuum or atmosphere) of the material to be transferred, as well as transfer efficiency.

[0003] Semiconductor wafers are often made of silicon and its related compounds. To protect the wafer surface from scratches or damage and to improve the transport efficiency in an atmospheric transport environment, a suction-type wafer pickup method is usually adopted, and a suction-type manipulator is selected and used.

[0004] However, in some cases, the wafer is in a high temperature state, and when the suction cup of the manipulator comes into contact with the wafer, the temperature difference between the manipulator and the wafer is large, causing uneven temperature distribution in various parts of the wafer, which will cause localized warping of the wafer and seriously affect the quality of the product. Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the embodiments of the present application is to provide a transport apparatus, a semiconductor process device, and a wafer transport method that can solve problems such as wafer warping caused by a large temperature difference between the suction cup of the manipulator and the wafer. [Means for solving the problem]

[0006] In order to solve the above technical problems, the present invention is realized as follows.

[0007] An embodiment of the present application provides a transport device for suctioning and transporting a wafer, the transport device including suction fingers, a heating element, a first temperature measuring element, a second temperature measuring element, and a control element, the suction fingers have suction portions for suctioning the wafer, the heating element and the first temperature measuring element are both provided in the suction portions, the second temperature measuring element is provided on the suction fingers and is provided at a distance from the suction portions, the second temperature measuring element is used to measure the temperature above or below the suction fingers, the control element is electrically connected to the heating element, the first temperature measuring element, and the second temperature measuring element, and when the temperature measured by the second temperature measuring element is higher than the temperature measured by the first temperature measuring element and the difference between the two is greater than a predetermined temperature difference, the control element is used to control the heating element to heat the suction portion so that the difference becomes equal to or less than the predetermined temperature difference.

[0008] An embodiment of the present application further provides a semiconductor processing device including the above-described transport apparatus.

[0009] An embodiment of the present application further provides a wafer transport method that is applicable to the transport device described above, the wafer transport method including the steps of controlling the suction portion of the suction finger to be positioned below or above the wafer, measuring the temperature of the suction portion with the first temperature measuring element and measuring the temperature of the wafer with the second temperature measuring element, controlling the heating element to heat the suction portion when the temperature measured by the second temperature measuring element is higher than the temperature measured by the first temperature measuring element and the difference between the two is greater than a predetermined temperature difference, so that the difference becomes equal to or less than the predetermined temperature difference, and controlling the suction portion to suction the wafer and controlling the movement of the suction finger to transport the wafer. [Effects of the Invention]

[0010] In an embodiment of the present application, the first temperature measuring element can measure the temperature of the suction part, and the second temperature measuring element can measure the temperature of the wafer. The first and second temperature measuring elements each transmit their measured temperature information to a control element, which analyzes and compares the measured temperature information and controls the heating element to perform a corresponding operation, thereby reducing the temperature difference between the suction part and the wafer to a predetermined temperature difference or less. Specifically, when the temperature measured by the second temperature measuring element is higher than the temperature measured by the first temperature measuring element and the temperature difference is greater than a predetermined temperature difference, the control element controls the heating element to heat the suction part so that the temperature difference is reduced to the predetermined temperature difference or less. This effectively alleviates the problem of wafer warpage caused by uneven temperatures at various parts of the wafer after the suction part contacts the wafer due to a large temperature difference between the suction part and the wafer. This embodiment of the present application reduces the temperature difference between the suction part and the wafer, thereby improving the temperature uniformity of the wafer and further ensuring wafer quality. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a first schematic diagram of a transport device and a wafer disclosed in an embodiment of the present application. [Figure 2] FIG. 2 is a second schematic diagram of a transport device and a wafer disclosed in an embodiment of the present application. [Figure 3] 1 is a schematic diagram of the structure of a suction finger disclosed in an embodiment of the present application; [Figure 4] 1 is a schematic diagram of a first portion of a boss structure disclosed in an embodiment of the present application. [Figure 5] FIG. 2 is a schematic diagram of a second portion of a boss structure disclosed in an embodiment of the present application. [Figure 6] 1A and 1B are partial schematic diagrams of the boss structure when the wafer comes into contact with the boss structure disclosed in the examples of the present application, where a) shows a configuration in which negative pressure holes are formed around the finger portion, and b) shows a configuration in which a central hole portion and an annular groove portion are combined. [Figure 7]FIG. 10 is a graph comparing the adsorption effect of a configuration in which negative pressure holes are formed around the finger portion as disclosed in the examples of the present application, and a configuration in which a central hole and an annular groove are combined. a) is the configuration in which negative pressure holes are formed around the finger portion, and b) is the configuration in which a central hole and annular groove are combined. [Figure 8] FIG. 10 is a comparative curve diagram of the adsorption effect before and after heating in the form of opening negative pressure pores around the finger portion disclosed in the examples of the present application, where a) is the state before heating and b) is the state after heating. [Figure 9] FIG. 10 is a comparison curve of the adsorption effect after heating between a configuration in which negative pressure holes are formed around the finger portion as disclosed in the examples of the present application and a configuration in which a central hole and an annular groove are combined, where a) is the configuration in which negative pressure holes are formed around the finger portion, and b) is the configuration in which a central hole and annular groove are combined. [Figure 10] FIG. 1 is a schematic diagram of a temperature control circuit for a suction finger disclosed in an embodiment of the present application. [Figure 11] 1 is a schematic diagram of the temperature control principle disclosed in an embodiment of the present application. [Figure 12] 1 is a flowchart of temperature control in one embodiment disclosed in the examples of the present application. [Figure 13] 1 is a structural schematic diagram of a transport device, an attachment base, and a robot arm disclosed in an embodiment of the present application. [Figure 14] 1 is a flowchart illustrating a wafer transfer method disclosed in an embodiment of the present application. [Figure 15] FIG. 10 is a schematic diagram of the suction fingers in a low position during wafer transfer according to an embodiment of the present application. [Figure 16] 10 is a schematic diagram showing a state where a suction finger pushes up a wafer during wafer transfer according to an embodiment of the present application. FIG. [Figure 17] 10 is a schematic diagram showing a state where the suction fingers suction the wafer during wafer transfer according to an embodiment of the present application. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] The technical solutions of the embodiments of the present application will be described below clearly and completely with reference to the drawings of the embodiments of the present application. Of course, the described embodiments are only some of the embodiments of the present application, not all of the embodiments. Based on the embodiments of the present application, other embodiments that a person skilled in the art can obtain without creative efforts all belong to the protection scope of the present application.

[0013] In the specification and claims of this application, terms such as "first," "second," etc. are used to distinguish between similar objects and are not intended to describe a particular order or sequence. Data used in this manner may be interchanged where appropriate so that embodiments of this application may be practiced in sequences other than those illustrated or described herein. It should be understood that objects distinguished by "first" and "second" are generally of the same type and do not limit the number of objects; for example, a first object may be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the related objects before and after are in an "or" relationship.

[0014] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings based on specific examples and application scenarios.

[0015] 1 to 17, an embodiment of the present application discloses a transfer apparatus 100 for adsorbing and transferring a wafer 400 so that the wafer 400 does not move spontaneously during transfer.

[0016] In this embodiment, the transport device 100 includes a suction finger 110, a heating element 120, a first temperature measuring element 130, a second temperature measuring element 140, and a control element 150. The suction finger 110 has a suction portion for suctioning the wafer 400, and the suction portion contacts the surface of the wafer 400, and the suction force maintains close contact between the wafer 400 and the suction portion, thereby achieving suction to the wafer 400 and preventing the wafer 400 from moving uncontrollably.

[0017] For example, the wafer 400 may be positioned on the upper surface of the suction portion. In this case, the suction portion can not only suction the wafer 400 but also support the wafer 400. The combined support and suction function allows the wafer 400 to be firmly attached to the suction portion, thereby preventing the wafer 400 from detaching from the suction portion or moving relative to the suction portion, which would affect the normal transport of the wafer 400 or reduce the positional accuracy of the wafer 400. Furthermore, the suction fingers 110 may be I-shaped ceramic fingers. Naturally, other types may also be used, and this is not a limitation.

[0018] In order to obtain the temperature of the adsorbent, in the embodiment of the present application, a first temperature measuring element 130 is provided in the adsorbent, so that the temperature of the adsorbent can be detected in real time by the first temperature measuring element 130, thereby laying the foundation for adjusting the temperature of the subsequent adsorbent.

[0019] Considering that the wafer 400 is placed and transported by the suction portion of the suction fingers 110, in this embodiment, a second temperature measuring element 140 is provided on the suction fingers 110, and the second temperature measuring element 140 is spaced apart from the suction portion to measure the temperature of the wafer 400. The second temperature measuring element 140 is used to measure the temperature above or below the suction fingers 110. For example, when the wafer 400 is attached to the suction portion, a portion of the wafer 400 may be located above or below the second temperature measuring element 140, with the second temperature measuring element 140 facing the surface of the wafer 400. In this case, the second temperature measuring element 140 can measure the temperature of the wafer 400 attached to the suction portion, thereby providing a basis for adjusting the temperature of the subsequent suction portion. When there is no wafer 400 attached to the suction portion, the temperature measured by the second temperature measuring element 140 is the environmental temperature above or below the suction fingers 110. As can be easily understood, the surface of the suction fingers 110 on which the wafer 400 is placed may face up or down, and the temperature measurement direction of the second temperature measuring element 140 always coincides with the direction of the surface of the suction fingers 110 on which the wafer 400 is placed. In the following, an example will be given in which the surface of the suction fingers 110 on which the wafer 400 is placed faces up.

[0020] Furthermore, the control element 150 is electrically connected to the first temperature measuring element 130 and the second temperature measuring element 140, respectively, so that the first temperature measuring element 130 and the second temperature measuring element 140 each transmit the detected temperature information to the control element 150, and the control element 150 compares, analyzes, processes, etc. the temperature information, thereby obtaining the temperature of the adsorption portion and the temperature of the wafer 400.

[0021] For example, the control element 150 may be a combination of control elements such as a thermostat and a solid-state relay to form a control circuit, where the thermostat and the solid-state relay may be mounted inside the suction finger 110 or the robot arm 300, thereby not affecting the wafer transport by the transport device.

[0022] If the temperature of the wafer 400 is too high or too low, causing a large temperature difference between the wafer 400 and the suction part, heat exchange occurs between the wafer 400 and the suction part when the wafer 400 comes into contact with the suction part, which causes a change in temperature at the part of the wafer 400 that is in contact with the suction part, resulting in a large difference in temperature between the area of ​​the wafer 400 that is in contact with the suction part and the area that is not in contact with the suction part. As can be seen from the principle of thermal expansion and cooling contraction, if the temperature is uneven, different deformations are likely to occur in different parts of the wafer 400, ultimately causing significant warpage of the wafer 400 and further affecting the quality of the wafer 400.

[0023] To alleviate the problem of warping of the wafer 400, in this embodiment, when the wafer 400 is in a high temperature state, the heating element 120 is provided in the suction unit, and the heating element 120 increases the temperature of the suction unit during heating. This reduces the difference between the temperature of the suction unit heated by the heating element 120 and the temperature of the wafer 400, which is advantageous to reducing the degree of warping of the wafer 400. Conversely, when the temperature of the wafer 400 is lower than that of the suction unit during heating, the heating element 120 can be stopped, thereby decreasing the temperature of the suction unit. In this case, stopping the operation of the heating element 120 reduces the heat transferred to the suction unit, thereby reducing the difference between the temperature of the suction unit and the temperature of the wafer 400, which is also advantageous to reducing the degree of warping of the wafer 400. In addition, the heating element 120 is further electrically connected to the control element 150, allowing the heating element 120 to operate under the control of the control element 150.

[0024] In this embodiment, when the temperature measured by the second temperature measuring element 140 is higher than the temperature measured by the first temperature measuring element 130 and the difference between the two temperatures is greater than a predetermined temperature difference, the control element 150 controls the heating element 120 to heat the suction portion so that the difference between the temperatures measured by the first temperature measuring element 130 and the second temperature measuring element 140 is equal to or less than the predetermined temperature difference. For example, the predetermined temperature difference is 0.5°C. Naturally, the predetermined temperature difference may be other temperature values ​​and is not particularly limited herein.

[0025] In the present embodiment, the first temperature measuring element 130 can measure the temperature of the suction part, and the second temperature measuring element 140 can measure the temperature of the wafer 400. The first temperature measuring element 130 and the second temperature measuring element 140 transmit their respective measured temperature information to the control element 150. The control element 150 analyzes and compares the measured temperature information and controls the heating element 120 to perform a corresponding operation, thereby reducing the difference between the temperature of the suction part and the temperature of the wafer 400 to a predetermined temperature difference or less. This effectively alleviates the problem of warping of the wafer 400 due to uneven temperatures at various parts of the wafer 400 after contact between the suction part and the wafer 400 caused by a large temperature difference between the suction part and the wafer 400. As a result, the present embodiment reduces the temperature difference between the suction part and the wafer 400, thereby ensuring temperature uniformity of the wafer 400 and further improving the quality of the wafer 400.

[0026] In the present embodiment, the control element 150 may further be used to control the heating element 120 to heat the suction portion when the temperature measured by the second temperature measuring element 140 is equal to or lower than a predetermined temperature, so that the temperature measured by the first temperature measuring element 130 is maintained within a predetermined temperature range. For example, the predetermined temperature may be 60°C, and the predetermined temperature range may be around 60°C, for example, 59.5°C, 59.7°C, 59.9°C, 60.2°C, 60.5°C, etc. Naturally, other temperature values ​​may be used, and this is not particularly limited.

[0027] If the wafer 400 is not attached to the suction unit or if the temperature of the attached wafer 400 is room temperature, the temperature detected by the second temperature measuring element 140 is the ambient temperature or room temperature, which is below the predetermined temperature. In this case, the control element 150 controls the heating element 120 to heat the suction unit so that the temperature of the suction unit is maintained within a predetermined temperature range. This ensures that the suction unit is at a constant temperature, which is advantageous for preheating the suction unit and improving process efficiency. If the temperature of the attached wafer 400 is room temperature (e.g., 25°C), the temperature of the suction unit is maintained within a predetermined temperature range (e.g., approximately 60°C). In this case, although there is a temperature difference between the temperature of the wafer 400 and the temperature of the suction unit, the wafer 400 is at a low temperature, so the wafer 400 is unlikely to warp due to this temperature difference.

[0028] When the wafer 400 is adsorbed to the adsorption unit, first, it is determined whether the temperature measured by the second temperature measuring element 140 is higher than the predetermined temperature (e.g., 60°C). If it is higher, it is determined whether the temperature measured by the second temperature measuring element 140 is higher than the temperature measured by the first temperature measuring element 130. If it is higher, it is determined whether the difference between the two is larger than a predetermined temperature difference. If it is larger, the control element 150 controls the heating element 120 to heat the adsorption unit, thereby increasing the temperature of the adsorption unit until the difference becomes equal to or smaller than the predetermined temperature difference. As can be easily understood, when the temperature measured by the second temperature measuring element 140 is higher than the temperature measured by the first temperature measuring element 130, the difference is always a positive number or 0.

[0029] 2 to 5, in some embodiments, the suction portion may include a boss structure 111, which serves as a suction portion and allows the wafer 400 to be placed and suctioned by the boss structure 111, ensuring stability during transportation of the wafer 400. Furthermore, suction holes 112 are provided on the edge surface of the boss structure 111 that contacts the wafer 400, allowing air to be bleed through the suction holes 112, creating a negative pressure region near the edge surface of the boss structure 111 that contacts the wafer 400. In this way, when the wafer 400 is placed on the edge surface of the boss structure 111, suction of the wafer 400 can be achieved. In some embodiments, the suction fingers 110 are provided at one end of the suction fingers 110. The end of the suction fingers 110 where the boss structure 111 is provided is generally the end farthest from the robot arm 300.

[0030] To achieve the air extraction, the transfer device further includes an air duct 115 provided on the suction finger 110 and communicating with the suction holes 112. Specifically, one end of the air duct 115 may communicate with the suction holes 112, and the other end of the air duct 115 may be connected to an air extraction device (not shown). Thus, when the air extraction device is operating, the gas source near the edge of the boss structure 111 that contacts the wafer 400 can be constantly sucked by the air extraction device through the suction holes 112 and the air duct 115, thereby forming a negative pressure region near the edge of the boss structure 111 and facilitating the suction of the wafer 400.

[0031] For example, the air duct 115 is positioned away from the surface of the boss structure 111 facing the wafer 400 along the protruding direction of the boss structure 111. This configuration allows the air duct 115 to communicate with the end of the suction hole 112 away from the wafer 400. Alternatively, the air duct 115 may extend from the end of the suction finger 110 closer to the robot arm 300 to the end farther from the robot arm 300, and finally to the center of the suction hole 112. This configuration increases the communication area between the air duct 115 and the suction hole 112, thereby improving the vacuum-drawing effect of the suction hole 112.

[0032] Furthermore, the heating element 120 and the first temperature measuring element 130 are both disposed inside the boss structure 111. As a result, the heating element 120 directly heats the boss structure 111, raising the temperature of the boss structure 111, and the first temperature measuring element 130 directly measures the temperature of the boss structure 111 in real time, thereby ensuring the accuracy of the temperature rise of the boss structure 111 and the temperature measurement. At the same time, the boss structure 111 also provides a certain protection for the heating element 120 and the first temperature measuring element 130, preventing the external environment from interfering with or damaging the heating element 120 and the first temperature measuring element 130.

[0033] For example, the heating element 120 may be a heating wire and may be installed inside the boss structure 111. This installation method can increase the heating area to a certain extent, thereby accelerating the temperature rise rate of the boss structure 111 and improving the temperature rise uniformity of the boss structure 111. Of course, the heating element 120 may be a heater sheet, a heater tube, or other structure, and the specific structure is not limited. Specifically, the heating wire may be installed around the suction hole 112, which can easily heat the local area of ​​the suction part close to the suction hole 112, thereby ensuring a small temperature difference between the suction part and the wafer 400 when they contact each other.

[0034] In addition, the air duct 115 may be connected to both the central hole portion 1121 and the annular groove portion 1122 so as to suck gas from both the central hole portion 1121 and the annular groove portion 1122, thereby forming negative pressure regions around each of the central hole portion 1121 and the annular groove portion 1122 and improving the adsorption effect of the wafer 400.

[0035] The first temperature measuring element 130 may be a thermocouple, a temperature sensor, a temperature transducer, or the like, and is not limited to a specific type as long as it can accurately measure the temperature of the boss structure 111.

[0036] The second temperature measuring element 140 may be a non-contact temperature measuring device, and the specific type is not limited as long as it can accurately measure the temperature of the wafer 400. In a more specific embodiment, an infrared temperature measuring sensor may be used to measure the temperature of the wafer 400 to ensure the accuracy of the temperature measurement.

[0037] To ensure reliable suction of the wafer 400, the wafer 400 must be in firm contact with the edge of the boss structure 111. However, because temperatures vary across the diameter of the wafer 400, minute warpage 410 may exist at different radial positions on the wafer 400. In this case, the larger the area covered by the suction holes 112, the larger the area that must be in close contact with the wafer 400, increasing the likelihood that the warpage 410 and the area covered by the suction holes 112 will overlap. If the areas covered by the warpage 410 and the suction holes 112 overlap, a wedge space is formed between the surface of the wafer 400 and the edge of the boss structure 111. The presence of this wedge space allows external gas to enter the suction holes 112. This can lead to poor suction of the wafer 400, making the wafer 400 more likely to detach from the boss structure 111 or move relative to the boss structure 111, affecting the normal transport of the wafer 400.

[0038] Based on the above, the suction holes 112 are provided in the central region of the end surface of the boss structure 111 that is to contact the wafer 400. This installation method allows the negative pressure region formed on the end surface of the boss structure 111 to be closer to the central region of the wafer 400. For example, the dimension of the boss structure 111 is generally set to 42 mm or less, and the distance between the edge of the suction holes 112 and the edge of the boss structure 111 may be 10 mm or more to ensure that no wedge space is formed after the warped portion 410 of the wafer 400 contacts the end surface of the boss structure 111, thereby improving the suction effect.

[0039] 4 to 6, the suction hole 112 may include a central hole 1121 and an annular groove 1122, the central hole 1121 being located at the center of the end face of the boss structure 111 that contacts the wafer 400, and the annular groove 1122 being provided to surround the central hole 1121. The central hole 1121 and the annular groove 1122 can respectively suck gas near the end face of the boss structure 111, thereby forming a negative pressure region around the central hole 1121 and the annular groove 1122 on the end face of the boss structure 111. When the wafer 400 is placed on the end face of the boss structure 111, the central hole 1121 and the annular groove 1122 can adsorb the wafer 400 to prevent the wafer 400 from detaching from the boss structure 111 or moving relative to the boss structure 111.

[0040] Compared with the configuration in which negative pressure holes are formed around the periphery of the suction fingers 110, the central hole 1121 and annular groove 1122 in this embodiment are both formed in the central region of the boss structure 111 and cover a small area. This prevents a wedge space from being formed when the warped portion 410 of the wafer 400 contacts the end face of the boss structure 111. This means that the annular groove 1122 is not unable to adhere to the wafer 400, but the end face of the boss forms a closed space with the wafer 400, ensuring that the periphery of the holes adheres to the surface of the wafer 400. As a result, the suction fingers 110 that combine the central hole 1121 and annular groove 1122 have a good suction effect and are highly adaptable to warpage.

[0041] In addition, the air duct 115 eventually extends to and communicates with the central hole 1121, and as it extends, it also communicates with the annular groove 1122 that is arranged to surround the central hole 1121.This allows gas to be sucked from the central hole 1121 and the annular groove 1122 via the air duct 115, forming negative pressure regions around the central hole 1121 and the annular groove 1122, respectively, and facilitating adsorption of the wafer 400.

[0042] Referring to FIG. 7, the adsorption effects of a configuration in which negative pressure holes are formed around the fingers and a configuration in which a central hole 1121 and an annular groove 1122 are combined were compared. When the adsorption pressure value was less than 40 KPa, the configuration in which negative pressure holes are formed around the fingers failed to adsorb the wafer 400, while the configuration in which a central hole 1121 and annular groove 1122 of the present invention were combined had a good adsorption effect.

[0043] Referring to Figure 8, the adsorption effect before and after heating when negative pressure holes are opened around the finger is compared. When the finger temperature is required to be higher than 60°C before picking up the wafer, the decrease in negative pressure value of the finger is always greater than 40 kPa. As can be seen, when the finger temperature is high, the adsorption effect is better than when the finger is at room temperature.

[0044] Referring to Figure 9, a comparison was made of the adsorption effect after heating between a configuration in which negative pressure holes are opened around the finger portion and a configuration in which a central hole portion 1121 and an annular groove portion 1122 are combined. It was found that the configuration in which a central hole portion 1121 and annular groove portion 1122 are combined has a high adsorption effect after heating, and the negative pressure value hardly decreases.

[0045] As can be seen from the comparison of the above data, by using a boss structure 111 of the suction finger 110 that combines a central hole portion 1121 and an annular groove portion 1122, the temperature difference between the wafer 400 and the boss structure 111 can be reduced by controlling the temperature of the boss structure 111 of the suction finger 110, and a good suction effect can be achieved in this case.

[0046] In some embodiments, the distance between the edge of the annular groove 1122 and the outer edge of the boss structure 111 is 10 mm or more, including, for example, 10 mm, 12 mm, 12.5 mm, 15 mm, etc. Naturally, other distance values ​​are possible as long as they meet the requirements of the actual operating conditions, and the embodiments of the present application are not particularly limited thereto. In a more specific embodiment, the distance between the outer edge of the annular groove 1122 and the outer edge of the boss structure 111 may be 12.5 mm. This configuration effectively ensures that no wedge space is formed after the warped portion 410 of the wafer 400 contacts the edge of the boss structure 111, thereby ensuring a good suction effect.

[0047] For example, the cross section of the central hole 1121 may be circular, and the diameter of the central hole 1121 may be in the range of 6 mm to 8 mm, specifically including 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, etc. Naturally, other numerical values ​​are also possible, and the central hole 1121 is not limited to a specific numerical value herein, as long as it is possible to ensure a sufficient suction force for the wafer 400. With this configuration, the central hole 1121 can achieve a good suction effect for the central portion of the wafer 400.

[0048] The cross section of the annular groove 1122 may be annular, and the width of the annular groove 1122 may be in the range of 2 mm to 4 mm, i.e., the width of the ring may be in the range of 2 mm to 4 mm, including, for example, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, etc. Naturally, other numerical values ​​are also acceptable, and the specific numerical values ​​are not limited herein, as long as sufficient suction force for the wafer 400 is ensured. Optionally, the inner diameter of the annular groove 1122 may be 13 mm, and the outer diameter may be 15 mm, etc. With this configuration, a wedge space is formed, preventing suction from becoming ineffective and ensuring good suction effect for the wafer 400.

[0049] Furthermore, the width distance between the inner wall of central hole 1121 and the edge of the inner wall of annular groove 1122 may be in the range of 2.5 mm to 4.5 mm, for example, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, etc. Such a configuration effectively prevents wafer 400 from being easily damaged due to the small area of ​​contact between central hole 1121 and annular groove 1122 and wafer 400, thereby ensuring stable placement of wafer 400 and high quality of wafer 400.

[0050] The cross section of the boss structure 111 may be circular, and the diameter of the boss structure 111 may range from 38 mm to 42 mm, specifically including 38 mm, 39 mm, 40 mm, 41 mm, 42 mm, etc. Naturally, other values ​​are also possible, and the specific values ​​are not limited herein as long as they meet the requirements for placing and suctioning the wafer 400. By designing the boss structure 111, a certain contact area with the wafer 400 can be ensured, thereby improving the effectiveness of supporting and suctioning the wafer 400.

[0051] The thickness of the boss structure 111 along the placement direction is 1.5 mm or more, and may be, for example, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, or 2.0 mm. Naturally, other values ​​are also possible, and are not limited to specific values. The main reason for limiting the thickness of the boss structure 111 is that the wafer 400 may have a certain degree of warpage. When the wafer 400 is placed on the edge of the boss structure 111, the boss structure 111 has a certain height. If the warpage is too great, the wafer 400 will not be able to fully contact the edge of the boss structure 111, which would affect the suction effect of the suction fingers 110 on the wafer 400.

[0052] In a more specific embodiment, the thickness of the boss may be 1.7 mm, in which case the maximum allowable warpage of the wafer 400 is 1.7 mm.

[0053] Furthermore, to ensure good contact between wafer 400 and the end face of boss structure 111 and to ensure a good adsorption effect, the surface roughness of the end face of boss structure 111 that comes into contact with wafer 400 may be in the range of 0.2 to 0.4, and more specifically may include 0.2, 0.25, 0.3, 0.35, 0.4, etc. Naturally, other values ​​are also acceptable as long as they ensure good contact between wafer 400 and the end face of boss structure 111 and do not form gaps that could cause gas leakage.

[0054] 2 and 3, in some embodiments, the suction fingers 110 have indentations 113 on their surfaces, which correspond to the edges of the wafer 400. The indentations 113 allow the wafer 400 to be positioned, improving the positional accuracy of the wafer 400.

[0055] Illustratively, the scribe marks 113 may be 8-inch scribe marks, i.e., scribe marks corresponding to the edge of an 8-inch wafer 400, thereby allowing the suction fingers 110 to accommodate wafers 400 of 8 inches or smaller. Alternatively, the scribe marks 113 may be 12-inch scribe marks, i.e., scribe marks corresponding to the edge of a 12-inch wafer 400, thereby allowing the suction fingers 110 to accommodate wafers 400 of 12 inches or smaller. Of course, the scribe marks 113 may have other dimensions.

[0056] In a more specific embodiment, 8-inch and 12-inch indentations are simultaneously provided on the surface of the suction fingers 110, thereby allowing for both 8-inch and 12-inch wafers 400 to be accommodated.

[0057] Furthermore, a sink structure 114 is further provided on the surface of the suction finger 110, and the distance between the side of the sink structure 114 and the indentation 113 is 5 mm or more, such as 5 mm, 6 mm, 8 mm, 10 mm, etc. Naturally, other dimensions are also possible as long as it is ensured that the side of the sink structure 114 does not interfere with the outer edge of the wafer 400. This configuration not only prevents interference with the wafer 400, but also ensures that the position of the wafer 400 is within an error range, thereby ensuring the positional accuracy of the wafer 400.

[0058] In some embodiments, the suction finger 110 may include a first finger and a second finger, and the boss structure 111 is provided at the end of the second finger away from the first finger. Here, the surface of the first finger facing the wafer 400 is lower than the surface of the second finger facing the wafer 400, and a sink structure 114 is formed at the connection between the first finger and the second finger. This ensures that the wafer 400 suctioned by the suction part does not come into contact with the first finger and provides space for warping of the wafer 400. Furthermore, to prevent the sink structure 114 from interfering with the wafer 400, the sink structure 114 needs to be located outside the maximum size of the wafer 400 that the suction finger 110 can accommodate. Furthermore, in some embodiments, the thickness of the first finger is large, thereby ensuring sufficient strength and rigidity of the suction finger 110, and the thickness of the second finger is small, i.e., the thickness of the second finger is smaller than the thickness of the first finger in the placement direction of the boss structure 111.

[0059] In a more specific embodiment, if the suction fingers 110 are compatible with an 8-inch wafer 400 and a 12-inch wafer 400, a certain distance can be formed between the side of the sink structure 114 and the 12-inch notch, which not only prevents interference with the 12-inch wafer 400 but also ensures that the position of the 12-inch wafer 400 is within an error range, thereby ensuring the positional accuracy of the 12-inch wafer 400.

[0060] The transport apparatus in the embodiment of the present application may further include a mounting base 200 and a robot arm 300, where the mounting base 200 is movably connected to the robot arm 300, and the transport apparatus 100 is connected to the mounting base 200. Based on this, the mounting base 200 and the transport apparatus 100 can be driven to move by the robot arm 300, and the transport apparatus 100 can drive to move the wafer 400, thereby realizing the transport of the wafer 400.

[0061] 1 to 17 , based on the above-described transfer apparatus 100, an embodiment of the present application further discloses a wafer transfer method that is applied to the transfer apparatus 100 and facilitates chucking and transporting a wafer 400. The disclosed wafer transfer method includes the steps of controlling the chucking portions of the suction fingers 110 so that they are positioned above or below the wafer 400, measuring the temperatures of the chucking portions with the first temperature measuring element 130 and the wafer 400 with the second temperature measuring element 140, controlling the heating element 120 to heat the chucking portions when the temperature measured by the second temperature measuring element 140 is higher than the temperature measured by the first temperature measuring element 130 and the difference between the two is greater than a predetermined temperature difference, so that the difference becomes equal to or less than the predetermined temperature difference, and controlling the chucking portions to chucking the wafer and controlling the movement of the suction fingers 110 to transport the wafer 400.

[0062] In some embodiments, after the step of controlling the suction portion of the suction finger 110 to be positioned above or below the wafer 400, as shown in FIG. 12 , the disclosed wafer transport method includes a step of determining whether the temperature T1 measured by the second temperature measuring element 140 is higher than a predetermined temperature T (T is equal to 60° C., for example), and if the result is Yes, determining whether the temperature T1 measured by the second temperature measuring element 140 is higher than the temperature T2 measured by the first temperature measuring element 130; if the result is No, detecting an interval time Time, and periodically executing the above determination process when the time is reached. and if the temperature T1 measured by the second temperature measuring element 140 is higher than the temperature T2 measured by the first temperature measuring element 130, determining whether the difference between the two (i.e., T1-T2) is greater than a predetermined temperature difference ΔT; if Yes, controlling the heating element 120 to heat the adsorption portion so that the difference (i.e., T1-T2) becomes equal to or less than the predetermined temperature difference ΔT; then detecting the interval time Time and periodically executing the above-mentioned determination process when that time is reached; if No, detecting the interval time Time and periodically executing the above-mentioned determination process when that time is reached.

[0063] If the temperature T1 measured by the second temperature measuring element 140 is equal to or lower than a predetermined temperature T (T is, for example, equal to 60°C), the heating element 120 is controlled to heat the adsorbent so that the temperature T2 measured by the first temperature measuring element 130 is equal to or close to the predetermined temperature T, i.e., is maintained within a predetermined temperature range, thereby maintaining the adsorbent at a constant temperature. The interval time Time is then detected, and the above-described judgment process is periodically performed when the time is reached. For example, the predetermined temperature T may be 60°C, and the predetermined temperature range may be near 60°C, such as 59.5°C, 59.7°C, 59.9°C, 60.2°C, 60.5°C, etc. Naturally, other values ​​may be used, and are not particularly limited herein.

[0064] In a specific implementation, while the suction unit suctions and transfers the wafer, the heating element 120 can heat the suction unit in real time based on the temperatures measured by the first temperature measuring element 130 and the second temperature measuring element 140. Of course, the heating element 120 can also adjust the temperature of the suction unit once at regular intervals based on the temperatures measured by the first temperature measuring element 130 and the second temperature measuring element 140, and this is not limited thereto.

[0065] In one embodiment, the steps of the wafer transport method in the embodiment of the present application include:

[0066] As shown in Figures 14 to 17, during operation, the three pins of the process chamber rise and push up the wafer 400. The transfer device 100 receives a command to extend its hand and determines whether the conditions for extending its hand are met. That is, it determines whether the three pins have risen and whether the valve has opened. If the conditions for extending its hand are met, the robot arm 300 drives the suction fingers 110 to move them below the wafer 400 and reach a position below where the wafer can be picked up. If the conditions for extending the fingers are not met, an alarm is issued. When the suction fingers 110 reach below the wafer 400, the first temperature measuring element 130 measures the temperature of the suction part, and the second temperature measuring element 140 measures the temperature of the wafer 400. The heating element 120 is controlled to heat the suction part so that the difference between the temperature of the suction part and the temperature of the wafer 400 is equal to or less than a predetermined temperature difference, thereby preventing the wafer 400 from warping due to an excessive temperature difference.

[0067] When the temperature of the suction part rises to a temperature close to that of the wafer 400, the suction fingers 110 move upward, bringing the suction part into contact with the underside of the wafer 400. As the suction fingers 110 continue to move upward, they push up the wafer 400, releasing it from the three pins. The vacuum system is then activated, generating a constant vacuum suction force at the suction part of the suction fingers 110, i.e., creating a negative pressure area around the suction part, thereby vacuum-adhering to the underside of the wafer 400 and ensuring that the wafer 400 does not move relative to the suction part. The robot arm 300 then retracts to a high position and drives the suction fingers 110 and the wafer 400 to move and transport the wafer 400 to the next station. This completes the process of removing the wafer from the process chamber. If the temperature difference between the wafer 400 and the suction fingers 110 is relatively small, when the suction fingers 110 reach the area below the wafer 400, the suction fingers 110 are moved upward, and the suction parts are brought into contact with the underside of the wafer 400. The first temperature measuring element 130 measures the temperature of the suction parts, and the second temperature measuring element 140 measures the temperature of the wafer 400. The heating element 120 is controlled to heat the suction parts so that the temperature difference between the suction parts and the wafer 400 is below a predetermined temperature difference, thereby preventing the wafer 400 from warping due to an excessive temperature difference. Vacuuming is then performed, and the suction parts vacuum-suck the underside of the wafer 400, ensuring that the wafer 400 does not move relative to the suction parts. The robot arm 300 is then retracted to a high position, and the suction fingers 110 and the wafer 400 are moved, transferring the wafer 400 to the next station. This completes the process of removing the wafer from the process chamber.

[0068] Based on the above steps, it is possible to effectively alleviate the problem that a large temperature difference between the suction part and the wafer 400 causes uneven temperatures at various parts of the wafer 400 after the suction part and the wafer 400 come into contact, resulting in warpage of the wafer 400. As a result, the embodiment of the present application reduces the temperature difference between the suction part and the wafer 400, thereby ensuring temperature uniformity of the wafer 400 and further improving the quality of the wafer 400.

[0069] Optionally, if the temperature of the adsorption part is lower than the temperature of the wafer 400 , the adsorption part is controlled to be heated, and the temperature of the adsorption part is raised to the same temperature as the temperature of the wafer 400 .

[0070] If the temperature of the adsorption part is higher than the temperature of the wafer 400 , control is performed to stop heating the adsorption part, and the temperature of the adsorption part is lowered to the same temperature as that of the wafer 400 .

[0071] Specifically, a heating element 120 may be provided inside the suction part, and when the temperature of the suction part is lower than that of the wafer 400, the heating element 120 operates to transfer heat to the suction part, raising the temperature of the suction part. This makes the temperature of the suction part equal to or close to the temperature of the wafer 400, mitigating the possibility of a temperature difference between the wafer 400 and the suction part and uneven temperatures at various parts of the wafer 400 causing warping of the wafer 400.

[0072] Conversely, if the temperature of the adsorption part is higher than the temperature of the wafer 400 during heating, the heating element 120 is controlled to stop or its heating power is reduced, reducing the heat transferred to the adsorption part and lowering the temperature of the adsorption part, so that the temperature of the adsorption part is finally equal to or close to the temperature of the wafer 400, thereby mitigating the temperature difference between the wafer 400 and the adsorption part and the uneven temperature of each point on the wafer 400, which causes warping of the wafer 400.

[0073] When the wafer 400 is not attached to the suction unit or when the wafer 400 attached to the suction unit is at room temperature, the temperature control method includes adjusting the temperature of the suction unit to a first predetermined temperature and maintaining the temperature constant. The first predetermined temperature may be, for example, 60°C.

[0074] Specifically, when the wafer 400 is not attached to the suction fingers 110, the temperature detected by the second temperature measuring element 140 is the ambient temperature. In this case, the control element 150 controls the temperature of the boss structure 111 to a first predetermined temperature or a temperature close to the first predetermined temperature, so that the boss structure 111 is kept at a constant temperature.

[0075] When the temperature of the wafer 400 held by the suction fingers 110 is room temperature, the temperature detected by the second temperature measuring element 140 is room temperature. In this case, the control element 150 controls the temperature of the boss structure 111 to a first predetermined temperature or a temperature close to the first predetermined temperature, so that the boss structure 111 is kept at a constant temperature.

[0076] Although the embodiments of the present application have been described above with reference to the drawings, the present application is not limited to the above-mentioned specific embodiments, and the above-mentioned specific embodiments are merely illustrative and not limiting. Those skilled in the art can make many more embodiments under the guidance of the present application without departing from the spirit and scope of the claims of the present application, and all of them belong to the protection of the present application. [Explanation of symbols]

[0077] 100 conveying device 110 Suction finger 111 Boss Structure 112 Adsorption hole 1121 Center hole 1122 Annular groove 113 Indentation 114 Sink Structure 115 Air Duct 120 heating element 130 first temperature measuring element 140 Second temperature measuring element 150 control element 200 Mounting Base 300 Robot Arm 400 wafers 410 Warped part

Claims

1. A transport device for suctioning and transporting a wafer, the conveying device includes a suction finger, a heating element, a first temperature measuring element, a second temperature measuring element, and a control element; the suction finger has a suction portion for suctioning the wafer, the heating element and the first temperature measuring element are both provided on the suction portion, the second temperature measuring element is provided on the suction finger and is spaced apart from the suction portion, and the second temperature measuring element is used to measure the temperature above or below the suction finger; The control element is electrically connected to the heating element, the first temperature measuring element, and the second temperature measuring element, respectively, and when the temperature measured by the second temperature measuring element is higher than the temperature measured by the first temperature measuring element and the difference between the two is greater than a predetermined temperature difference, the control element is used to control the heating element to heat the suction portion so that the difference becomes equal to or less than the predetermined temperature difference.

2. The conveying device according to claim 1, characterized in that the control element is further used to control the heating element to heat the suction portion so that the temperature measured by the first temperature measuring element is maintained within a predetermined temperature range when the temperature measured by the second temperature measuring element is below a predetermined temperature.

3. the suction portion includes a boss structure, and the boss structure has a suction hole on an end surface thereof for contacting the wafer; the heating element and the first temperature measuring element are both disposed within the boss structure; 3. The conveying device according to claim 1, further comprising an air duct provided in the suction finger and communicating with the suction hole.

4. 4. The transport device according to claim 3, wherein the suction hole is provided in a central region of an end surface of the boss structure that comes into contact with the wafer, and the distance between an edge of the suction hole and an edge of the boss structure is 10 mm or more.

5. The suction hole includes a central hole and an annular groove, 4. The conveying device according to claim 3, wherein the central hole is located at the center of the end face, the annular groove is arranged to surround the central hole, and the air duct is connected to both the central hole and the annular groove.

6. 6. The transport device according to claim 5, wherein the distance between the outer edge of the annular groove and the outer edge of the boss structure is 10 mm or more, and the dimension of the boss structure is 42 mm or less.

7. The cross section of the central hole is circular and the diameter of the central hole is in the range of 6 mm to 8 mm; and / or The cross section of the annular groove is annular, and the width of the annular groove is in the range of 2 mm to 4 mm; and / or 6. The conveying device of claim 5, wherein the boss structure has a circular cross section and a diameter range of 38 mm to 42 mm.

8. The thickness of the boss structure in the mounting direction is 1.5 mm or more, and / or 4. The transfer device according to claim 3, wherein the surface roughness of the end face of the boss structure that comes into contact with the wafer is in the range of 0.2 to 0.

4.

9. 4. The conveying device according to claim 3, wherein the suction fingers have notches on their surfaces facing the wafer, the notches being positioned to correspond to the edges of the wafer.

10. the suction finger includes a first finger portion and a second finger portion, the boss structure being provided at an end of the second finger portion remote from the first finger portion; 10. The conveying device of claim 9, wherein the surface of the first finger portion facing the wafer is lower than the surface of the second finger portion facing the wafer, a sink structure is formed at the connection point between the first finger portion and the second finger portion, and the distance between the side of the sink structure and the indentation is 5 mm or more.

11. A semiconductor process device comprising the transport apparatus according to any one of claims 1 to 10.

12. A wafer transport method, which is applied to the transport apparatus according to any one of claims 1 to 10, and which comprises: controlling the suction portions of the suction fingers so that they are positioned above or below the wafer; measuring the temperature of the suction part by the first temperature measuring element and measuring the temperature of the wafer by the second temperature measuring element; a step of controlling the heating element to heat the adsorption portion when the temperature measured by the second temperature measuring element is higher than the temperature measured by the first temperature measuring element and the difference between the two temperatures is greater than a predetermined temperature difference, so that the difference becomes equal to or less than the predetermined temperature difference; controlling the suction unit to suction the wafer and controlling the movement of the suction fingers to transport the wafer.

13. 13. The wafer transport method of claim 12, further comprising the step of controlling the heating element to heat the suction portion when the temperature measured by the second temperature measuring element is equal to or lower than a predetermined temperature so that the temperature measured by the first temperature measuring element is maintained within a predetermined temperature range.

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