Compositions and related systems and methods for polishing hardmasks

Abstract

A system for polishing a hardmask includes a composition including permanganate ions of a permanganate oxidizer; a substrate including a hardmask including at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to contact the composition with the substrate to remove at least a portion of the hardmask of the substrate.

Description

[Technical Field]

[0001]

[0001] The present disclosure relates to compositions and related systems and methods for polishing hard masks. [Background technology]

[0002]

[0002] Planarized and polished substrates can be patterned with materials that have insulating, conductive, and semiconducting properties, and the resulting substrates are useful in semiconductor manufacturing. Summary of the Invention

[0003] Some embodiments relate to a system including a composition comprising permanganate ions or a permanganate oxidizer; a substrate including a hard mask comprising at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to contact the composition with the substrate to remove at least a portion of the hard mask of the substrate.

[0004]

[0004] Some embodiments relate to a method that includes one or more of the following steps: obtaining a substrate including a hard mask that includes at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof; obtaining a composition that includes permanganate ions or a permanganate oxidizing agent; and contacting the composition with the hard mask using a chemical mechanical planarization apparatus sufficient to remove at least a portion of the hard mask.

[0005] Some embodiments relate to a composition including a permanganate ion of a permanganate oxidizer. In some embodiments, the composition removes at least a portion of a hard mask when contacted with the hard mask using a chemical mechanical planarization apparatus. In some embodiments, the hard mask includes at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof.

[0006]

[0006] Certain embodiments of the present disclosure are herein described, by way of example only, with reference to the accompanying drawings. Referring now in detail to the drawings, it is emphasized that the illustrated embodiments are by way of example and for the purpose of illustratively discussing embodiments of the present disclosure. In this regard, when read in conjunction with the drawings, it will become apparent to those skilled in the art how embodiments of the present disclosure may be practiced. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 7 is a schematic diagram of a system for polishing a hard mask, according to some embodiments. [Figure 2]

[0008] 1 is a flowchart of a method for polishing a hard mask, according to some embodiments. Modes for carrying out the invention

[0008]

[0009] Among the benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. While detailed embodiments of the present disclosure are disclosed herein, it should be understood that the disclosed embodiments are merely exemplary of the present disclosure, which may be embodied in various forms. Moreover, the examples given of various embodiments of the present disclosure are illustrative rather than limiting.

[0009]

[0010] All prior patents and publications referenced herein are incorporated by reference in their entirety.

[0010]

[0011] Throughout this specification and claims, the following terms have the meanings expressly associated therewith unless the context clearly dictates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, although they may. Additionally, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, although they may. It is intended that all embodiments of the present disclosure may be combined without departing from the scope or spirit of the disclosure.

[0011]

[0012] As used herein, the term "based on" is not exclusive and allows for based on additional unrecited factors unless the context clearly indicates otherwise. Additionally, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0012]

[0013] Chemical mechanical planarization (CMP) is a process of removing material from the surface of a substrate, such as a silicon wafer, and planarizing and polishing the surface through physical processes (e.g., polishing) and chemical processes (e.g., oxidation, chelating, etc.). To perform the CMP process, a slurry is applied to the surface of the substrate using a CMP apparatus configured to perform the removal, planarization, and polishing processes. To be suitable for polishing applications, the slurry must exhibit adequate performance in terms of selectivity and removal rate, while also providing a degree of control and adjustability therefor. The slurry should also be adjustable depending on the operating pH range, polishing pad type, etc. When the material to be removed from the surface of the substrate is a hard material or hard mask, conventional slurries cannot meet the performance requirements for polishing such materials.

[0013]

[0014] Embodiments disclosed herein provide compositions that overcome at least the aforementioned problems and drawbacks. For example, some embodiments relate to compositions including permanganate ions of a permanganate oxidizing agent. The compositions disclosed herein may be useful for polishing hard masks using chemical mechanical planarization equipment. The compositions disclosed herein exhibit excellent polishing performance in terms of selectivity and removal rate, while also providing control and adjustability in these respects, as well as in terms of operating pH range, polishing pad type, and the like. The embodiments disclosed herein further provide, inter alia, related systems and methods that include the compositions disclosed herein.

[0014]

[0015] FIG. 1 is a schematic diagram of a system 100 for polishing a hard mask according to some embodiments.

[0015]

[0016] As shown in FIG. 1, a system 100 for polishing a hard mask includes a chemical mechanical planarization apparatus (CMP apparatus 200). The CMP apparatus 200 includes a polishing head 205 mounted on a carrier 210, a platen 215, and a polishing pad 220 on the platen 215. The polishing head 205 is configured to hold a substrate 300 and bring the substrate 300 into contact with the polishing pad 220. The polishing pad 220 is configured to rotate to polish the surface of the substrate 300 using a composition 400. The composition 400 is supplied to the substrate 300 through an inlet 225. The inlet 225 is fluidly coupled to a valve 230 for delivering the composition 400 from a source (not shown). In some embodiments, a composition 500 is supplied to the substrate 300 through an inlet 235. The inlet 235 is fluidly coupled to a valve 240 for delivering the composition 500 from a source (not shown). In some embodiments, a process controller 245 (e.g., a microprocessor, a microcontroller, etc.) is communicatively coupled to the valves 230 and 240 to supply the composition 400 and / or the composition 500 to the substrate 300. In some embodiments, the CMP apparatus 200 includes a water supply 250.

[0016]

[0017] The substrate 300 includes a hard material on the surface of the substrate.

[0017]

[0018] In some embodiments, the hard material is provided on the surface of a silicon wafer. In some embodiments, the hard material is present on the surface of the substrate in the form of a thin film. In some embodiments, the hard material on the surface of the substrate is referred to herein as a hard mask. In some embodiments, the hard mask does not contain carbon. In some embodiments, the term "non-carbon," when used as a modifier, refers to a material that does not contain carbon. In some embodiments, the hard mask includes at least one of a non-carbon-boron component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof. In some embodiments, the hard mask includes boron and amorphous silicon. In some embodiments, the hard mask includes chromium and chromium oxide. In some embodiments, the hard mask includes polysilicon and doped polysilicon. In some embodiments, the hard mask includes silica. In some embodiments, the hard mask includes zirconia.

[0018]

[0019] In some embodiments, the hardmask comprises or consists of a boron-carbon component. In some embodiments, the hardmask comprises or consists of boron and carbon. In some embodiments, the hardmask comprises or consists of a boron component and a carbon component.

[0019]

[0020] In some embodiments, the hardmask comprises 1% to 99% by weight of boron content, or any range or subrange therebetween, based on the total weight of the hardmask. In some embodiments, the hardmask comprises 10% to 99%, 20% to 99%, 30% to 99%, 40% to 99%, 50% to 99%, 60% to 99%, 65% to 99%, 70% to 99%, 75% to 99%, 80% to 99%, 85% to 99%, 90% to 99%, 95% to 99%, 1% to 90%, 1% to 80%, 1% to 70%, 1% to 60%, 1% to 50%, 1% to 40%, 1% to 30%, 1% to 20%, or 1% to 10% by weight of boron content, based on the total weight of the hardmask.

[0020]

[0021] In some embodiments, the hard mask comprises 1% to 99% by weight of carbon content, or any range or subrange therebetween, based on the total weight of the hard mask. In some embodiments, the hard mask comprises 10% to 99%, 20% to 99%, 30% to 99%, 40% to 99%, 50% to 99%, 60% to 99%, 65% to 99%, 70% to 99%, 75% to 99%, 80% to 99%, 85% to 99%, 90% to 99%, 95% to 99%, 1% to 90%, 1% to 80%, 1% to 70%, 1% to 60%, 1% to 50%, 1% to 40%, 1% to 30%, 1% to 20%, or 1% to 10% by weight of carbon content, based on the total weight of the hard mask.

[0021]

[0022] The composition 400 includes one or more components for polishing a hard mask on the surface of the substrate 300 .

[0022]

[0023] In some embodiments, composition 400 includes a permanganate ion of a permanganate oxidizer. In some embodiments, the permanganate oxidizer includes at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. In some embodiments, the permanganate ion is MnO -4 Includes.

[0023]

[0024] In some embodiments, composition 400 includes at least one of ions of a metal oxidation catalyst, ions of an acid catalyst, or any combination thereof.

[0024]

[0025] In some embodiments, the metal oxy-catalyst is an oxynitrate, oxychloride, oxysulfate, oxycarbonate, C-C 10 In some embodiments, the metal oxy-catalyst comprises at least one of zirconium oxynitrate, zirconium oxychloride, nickel oxynitrate, nickel oxychloride, hafnium oxynitrate, hafnium oxychloride, zirconium oxyalkanoate, or any combination thereof. In some embodiments, the metal oxy-catalyst comprises at least one of ZrO + , ZrO ++ , NiO + , ZrOH + , HfO + , HfOH + , TiO + , TiO ++ In some embodiments, the acid catalyst comprises at least one of aluminum nitrate, aluminum chloride, ferric nitrate, ferric chloride, cupric nitrate, potassium chloride, manganese chloride, or any combination thereof. In some embodiments, the ions of the acid catalyst are Al 3+ , Fe + , Fe 2+ , Fe 3+ or any combination thereof.

[0025]

[0026] In some embodiments, the composition comprises 0.2% to 6% by weight of permanganate oxidizing agent, or any range or subrange therebetween, based on the total weight of the composition. In some embodiments, the composition comprises 0.2% to 5.5%, 0.2% to 5%, 0.2% to 4.5%, 0.2% to 4%, 0.2% to 3.5%, 0.2% to 3%, 0.2% to 2.5%, 0.2% to 2%, 0.2% to 1.5%, 0.2% to 1%, 0.2% to 0.5%, 0.5% to 6%, 1% to 6%, 1.5% to 6%, 2% to 6%, 2.5% to 6%, 3% to 6%, 3.5% to 6%, 4% to 6%, 4.5% to 6%, 5% to 6%, or 5.5% to 6% of permanganate oxidizing agent, by weight, based on the total weight of the composition.

[0026]

[0027] In some embodiments, the composition comprises 0.01% to 2 wt.% of catalyst, or any range or subrange therebetween, based on the total weight of the composition. In some embodiments, the composition comprises 0.1% to 2%, 0.2% to 2%, 0.3% to 2%, 0.4% to 2%, 0.5% to 2%, 0.6% to 2%, 0.7% to 2%, 0.8% to 2%, 0.9% to 2%, 1.1% to 2%, 1.2% to 2%, 1.3% to 2%, 1.4% to 2%, 1.5% to 2%, 1.6% to 2%, 1.7% to 2%, 1.8% to 2%, 1.9% to 2%, 0.01% to 1.9%, 0.01% to 1.0 ... Contains 0.8%, 0.01% to 1.7%, 0.01% to 1.6%, 0.01% to 1.5%, 0.01% to 1.4%, 0.01% to 1.3%, 0.01% to 1.2%, 0.01% to 1.1%, 0.01% to 1%, 0.01% to 0.9%, 0.01% to 0.8%, 0.01% to 0.7%, 0.01% to 0.6%, 0.01% to 0.5%, 0.01% to 0.4%, 0.01% to 0.3%, 0.01% to 0.2%, or 0.01% to 0.1% of a catalyst.

[0027]

[0028] In some embodiments, composition 400 comprises abrasive particles. In some embodiments, the abrasive particles comprise an oxide, a hydrated metal oxide, or any combination thereof. In some embodiments, the abrasive particles comprise at least one of manganese oxide, zirconia, silica, alumina, alpha alumina, alumina-ceria, ceria, or any combination thereof. In some embodiments, the abrasive particles comprise a coating comprising at least one of manganese oxide, zirconia, silica, alumina, alpha alumina, alumina-ceria, ceria, or any combination thereof. In some embodiments, the abrasive particles have a Mohs hardness of 2-9, 2-8, 2-7, 2-6, 2-5, 2-4, 2-3, 3-9, 4-9, 5-9, 6-9, 7-9, or 8-9.

[0028]

[0029] In some embodiments, composition 400 includes a pH adjuster. In some embodiments, the pH adjuster includes at least one of an inorganic acid, a metal salt, an organic acid, an organic hydroxide, or any combination thereof. In some embodiments, the metal salt includes at least one of a metal nitrate, a metal hydroxide, or any combination thereof. In some embodiments, the pH adjuster includes at least one of H2SO4, HNO3, HF, H3PO4, HCl, Al(NO3)3, Mn(NO3)2, Zr(NO3)2, Fe(NO3)3, KOH, NaOH, Al(OH)3, CH3SO3H, polystyrene sulfonic acid (PSSA), toluenesulfonic acid, salicylic acid, oxalic acid, succinic acid, citric acid, malic acid, lactic acid, fumaric acid, NH4OH, choline hydroxide, or a combination thereof.

[0029]

[0030] In some embodiments, composition 400 has a pH of 2 to 5. In some embodiments, composition 400 has a pH of 2 to 4. In some embodiments, composition 400 has a pH of 2 to 3. In some embodiments, composition 400 has a pH of 3 to 5. In some embodiments, composition 400 has a pH of 4 to 5.

[0030]

[0031] In some embodiments, composition 400 does not include hydrogen peroxide.

[0031]

[0032] Composition 500 is optional and may include one or more components of composition 400 .

[0032]

[0033] In some embodiments, composition 500 is the same as or similar to composition 400. In some embodiments, composition 500 is different from composition 400. In some embodiments, composition 500 includes any one or more of the components described above with respect to composition 400.

[0033]

[0034] With respect to at least Composition 400 and Composition 500, the following U.S. patent applications are incorporated herein by reference in their entirety for all purposes: U.S. Patent Application No. 17 / 232,947 (filed April 16, 2021, entitled "CMP COMPOSITIONS FOR POLISHING DIELECTRIC MATERIALS") and U.S. Patent Application No. 7 / 163,372 (filed January 30, 2021, entitled "CMP COMPOSITIONS FOR POLISHING HARD MATERIALS").

[0034]

[0035] Some embodiments relate to a composition for polishing a hard mask. The composition for polishing a hard mask may include any of the compositions disclosed herein. In some embodiments, the composition includes permanganate ions of a permanganate oxidizer. In some embodiments, the composition removes at least a portion of the hard mask when contacted with the hard mask using a chemical mechanical planarization apparatus. In some embodiments, the hard mask includes at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof.

[0035]

[0036] FIG. 2 is a flowchart of a method for polishing a hardmask, according to some embodiments. Method 600 of polishing a hardmask can include one or more of the steps shown in FIG. In some embodiments, method 600 includes step 602 of obtaining a substrate including a hardmask. In some embodiments, the hardmask includes at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof. In some embodiments, method 600 includes step 604 of obtaining a composition for polishing the hardmask. In some embodiments, the composition includes permanganate ions of a permanganate oxidizer. In some embodiments, method 600 includes step 606 of contacting the composition with the hardmask using a chemical mechanical planarization apparatus sufficient to remove at least a portion of the hardmask. It will be understood that any of the compositions, substrates, and CMP apparatus disclosed herein can be used without departing from the scope of the present disclosure.

[0036] Example 1 Abrasive-free composition

[0037] Compositions were prepared using different catalysts and used to polish hard masks. For comparison, a control composition without a catalyst was also prepared. None of the compositions contained abrasive particles. The material removal rates of the various compositions were measured on non-carbon wafers containing approximately 99% boron using a CMP system equipped with a DuPont CMP pad (IC1010 CMP polishing pad) operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The oxidizer, catalyst, and material removal rate (MRR) for each composition are summarized in Table 1 below.

[0038] Table 1 TIFF2026502738000002.tif37170

[0037] Example 2 Composition using abrasive particles

[0039] Compositions were prepared using different catalysts and different abrasive particles. The resulting compositions were used to polish hard masks. The material removal rates of the various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP system equipped with a DuPont CMP pad (IC1010 CMP polishing pad) operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The oxidizer, oxidizer concentration (weight percent), abrasive type, abrasive concentration (weight percent), catalyst, and material removal rate (MRR) for each composition are summarized in Table 2 below. All weight percentages are based on the total weight of each composition.

[0040] Table 2 TIFF2026502738000003.tif51170

[0038] Example 3 Compositions with different oxidizing agents

[0041] Compositions were prepared using different oxidizers and used to polish hard masks. The material removal rates of the various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP system equipped with DuPont CMP pads (IC1010 CMP polishing pad and IK4250H CMP polishing pad) operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The oxidizer, oxidizer concentration (weight percent), abrasive type, abrasive concentration (weight percent), catalyst, various material removal rates (MRR), and selectivity for each composition are summarized in Tables 3 and 4 below. All weight percentages are based on the total weight of each composition.

[0042] Table 3 TIFF2026502738000004.tif49170

[0043] Table 4 TIFF2026502738000005.tif56170

[0039] Example 4 Compositions with different pH

[0044] Compositions with different pH values ​​were prepared and used to polish hard masks. The material removal rates of the various compositions were measured on non-carbon wafers containing approximately 97% boron using a CMP system equipped with a DuPont CMP pad (IC1010 CMP polishing pad) operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The oxidizer, catalyst, operating pH, and material removal rate (MRR) for each composition are summarized in Table 5 below.

[0045] Table 5 TIFF2026502738000006.tif26170

[0040] Example 5 Polishing at different pressures

[0046] A composition was prepared containing 0.8 wt. % KMnO4 (based on the total weight of the composition), 0.1 wt. % alpha alumina abrasive particles (based on the total weight of the composition), 0.5 wt. % boehmite abrasive particles (based on the total weight of the composition), and 0.2 wt. % zirconium oxynitrate (based on the total weight of the composition). The composition was used to polish boron amorphous silicon hard masks at different pressures. The material removal rates of the composition at different pressures were measured using a CMP machine equipped with a DuPont CMP pad (IC1010 CMP polishing pad) operating on the hard mask at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The material removal rates at each pressure for boron amorphous silicon hard masks with different levels of boron content are summarized in Table 6 below.

[0047] Table 6 TIFF2026502738000007.tif22170

[0041]

[0048] Aspects

[0049] Various aspects are described below, and it should be understood that any one or more of the features listed in the following aspects can be combined with any one or more other aspects. Aspect 1 1. A system comprising: a composition comprising permanganate ions of a permanganate oxidizer; a substrate comprising a hard mask comprising at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof; a chemical mechanical planarization (CMP) apparatus configured to contact the composition with the substrate so as to remove at least a portion of the hard mask of the substrate; A system including: Aspect 2 2. The system of embodiment 1, wherein the permanganate oxidizer comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. Aspect 3 Permanganate ions are MnO -4 3. The system of claim 1 or 2, comprising: Aspect 4 4. The system of any one of aspects 1-3, wherein the hard mask comprises boron and amorphous silicon. Aspect 5 5. The system of any one of aspects 1-4, wherein the hard mask comprises chromium and chromium oxide. Aspect 6 6. The system of any one of aspects 1-5, wherein the hard mask comprises polysilicon and doped polysilicon. Aspect 7 7. The system of any one of embodiments 1-6, wherein the hard mask comprises silica. Aspect 8 8. The system of any one of embodiments 1-7, wherein the hard mask comprises zirconia. Aspect 9

[0023] Aspect 9. The system of any one of aspects 1-8, wherein the composition further comprises at least one of ions of a metal oxidation catalyst, ions of an acid catalyst, or any combination thereof.

[0023] Embodiment 10. The system of any one of embodiments 1-9, wherein the composition further comprises abrasive particles having a Mohs hardness of 2-9. Aspect 11 11. The system of any one of embodiments 1 to 10, wherein the composition further comprises a pH adjuster. Aspect 12 1. A method comprising: obtaining a substrate including a hard mask comprising at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof; obtaining a composition comprising permanganate ions of a permanganate oxidizer; contacting the composition with the hard mask using a chemical mechanical planarization apparatus sufficient to remove at least a portion of the hard mask; A method comprising: Aspect 13 13. The method of embodiment 12, wherein the permanganate oxidizing agent comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. Aspect 14 Permanganate ions are MnO -4 14. The method of claim 12 or 13, comprising: Aspect 15 15. The method of any one of embodiments 12-14, wherein the hard mask comprises boron and amorphous silicon. Aspect 16 16. The method of any one of embodiments 12 to 15, wherein the hard mask comprises chromium and chromium oxide. Aspect 17 17. The method of any one of embodiments 12-16, wherein the hard mask comprises polysilicon and doped polysilicon. Aspect 18 18. The method of any one of embodiments 12-17, wherein the hard mask comprises silica. Aspect 19 19. The method of any one of embodiments 12-18, wherein the hard mask comprises zirconia. Aspect 20 Permanganate ion in permanganate oxidizers A composition comprising: wherein the composition removes at least a portion of the hard mask when the composition contacts the hard mask using a chemical mechanical planarization apparatus; The hard mask comprises at least one of a non-carbon-boron component, a boron-carbon component, a non-carbon-silicon component, a non-carbon-chromium component, a non-carbon-zirconium component, or any combination thereof. composition.

[0042]

[0050] It should be understood that changes may be made in details, particularly in matters of the materials of construction used and the shape, size and arrangement of parts without departing from the scope of the invention. The specification and described embodiments are exemplary, with the true scope and spirit of the present disclosure being indicated by the following claims.

Claims

1. 1. A system comprising: a composition comprising permanganate ions of a permanganate oxidizer; a substrate including a hard mask formed from a non-carbon material or a boron-carbon material; Chemical mechanical planarization (CMP) equipment Including, the CMP apparatus is configured to contact the composition with the hard mask so as to remove at least a portion of the hard mask. system.

2. 10. The system of claim 1, wherein the permanganate oxidizer comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

3. The permanganate ions are MnO －４ The system of claim 1 , comprising:

4. The system of claim 1 , wherein the hard mask comprises boron and amorphous silicon.

5. The system of claim 1 , wherein the hard mask comprises chromium and chromium oxide.

6. The system of claim 1 , wherein the hard mask comprises polysilicon and doped polysilicon.

7. The system of claim 1 , wherein the hard mask comprises silica.

8. The system of claim 1 , wherein the hard mask comprises zirconia.

9. The system of claim 1 , wherein the composition further comprises at least one of ions of a metal oxy-catalyst, ions of an acid catalyst, or any combination thereof.

10. The system of claim 1 , wherein the composition further comprises abrasive particles having a Mohs hardness of 2 to 9.

11. The system of claim 1 , wherein the composition further comprises a pH adjuster.

12. 1. A method comprising: obtaining a substrate including a hard mask formed from a non-carbon material or a boron-carbon material; obtaining a composition comprising permanganate ions of a permanganate oxidizer; contacting the composition with the hard mask using a chemical mechanical planarization apparatus to remove at least a portion of the hard mask; A method comprising:

13. 13. The method of claim 12, wherein the permanganate oxidizer comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

14. The permanganate ions are MnO －４ 13. The method of claim 12, comprising:

15. 13. The method of claim 12, wherein the hard mask comprises boron and amorphous silicon.

16. 13. The method of claim 12, wherein the hard mask comprises chromium and chromium oxide.

17. 13. The method of claim 12, wherein the hard mask comprises polysilicon and doped polysilicon.

18. The method of claim 12 , wherein the hard mask comprises silica.

19. The method of claim 12 , wherein the hard mask comprises zirconia.

20. 1. A composition comprising permanganate ions of a permanganate oxidizer, A composition, wherein the composition removes at least a portion of a non-carbon hardmask or a boron-carbon hardmask when the composition is contacted with the non-carbon hardmask or the boron-carbon hardmask using a chemical mechanical planarization apparatus.

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