Substrate Processing Equipment

Abstract

The present invention provides a substrate processing apparatus for processing a substrate, the substrate processing apparatus including: a chamber having an internal space; a support unit for supporting the substrate in the internal space; a gas supply unit for supplying a processing gas to the internal space; a window covering an upper end of the internal space; a coil unit disposed above the window; a power supply unit for applying high frequency power to the coil unit; and a magnetic regulator disposed above the coil unit, in which an eddy current is generated by electromagnetic induction by the coil unit.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that processes a substrate by utilizing plasma. [Background technology]

[0002] Plasma is an ionized gas state consisting of ions, radicals, and electrons, and is generated by extremely high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes include ashing and etching processes that use plasma to remove film materials on substrates. The ashing and etching processes are carried out when ion and radical particles contained in the plasma collide with or react with film materials on the substrate.

[0003] In a conventional inductively coupled plasma (ICP) apparatus for etching a semiconductor substrate, multiple RF coils 2a may be used to adjust the plasma density in different regions. Each RF coil 2a generates an electromagnetic field, forming an electromagnetic field around the region where the RF coil 2a is located. In this case, the plasma density increases in proportion to the strength of the electromagnetic field.

[0004] In this case, the biggest drawback of the inductively coupled plasma device is that it is difficult to generate a uniform plasma.

[0005] Looking at the conventional inductively coupled plasma device in detail, Figure 1 is a perspective view of the conventional inductively coupled plasma device with an RF coil 2a attached to a window 2b, and Figure 2 shows a profile of the electromagnetic field distribution around the RF coil 2a shown in Figure 1.

[0006] As shown in FIGS. 1 and 2, the conventional inductively coupled plasma device exhibits the strongest electromagnetic field distribution in the area closest to the coil, and the further away from the coil the weaker the electromagnetic field becomes.

[0007] In particular, in conventional inductively coupled plasma devices, due to the structural characteristics of the RF coil 2a, the space 3a between both ends of the RF coil 2a, among the areas where the RF coil 2a is not placed, shows the weakest electromagnetic field distribution. This space 3a creates an asymmetry in which the electromagnetic field distribution appears different on the left and right sides of a central axis on the Cartesian coordinate system, and also creates an asymmetry in which the electromagnetic field distribution appears different for each azimuthal angle on the azimuthal coordinate system.

[0008] Looking more closely at other arrangement structures of the RF coil 2a, FIG. 3 is a perspective view of a conventional inductively coupled plasma device in which the RF coil 2a is attached to a window, and FIG. 4 shows a profile of the electromagnetic field distribution around the RF coil 2a shown in FIG. 3.

[0009] In the conventional inductively coupled plasma device shown in FIGS. 3 and 4, one end of the RF coil 2a is configured in a shape that is bent twice by a window 2b, unlike FIG. 1, and a separation space 3a is formed between both ends of the RF coil, so that the asymmetry of the electromagnetic field in the separation space 3a of the RF coil 2a is greater than that of the inductively coupled plasma device shown in FIG. 2.

[0010] As described above, in the conventional inductively coupled plasma device, the RF coil 2a is arranged in a structure such that a space 3a is formed between both ends of the RF coil 2a. This space 3a creates an asymmetry in which the electromagnetic field distribution differs between the Cartesian coordinate system and the azimuthal coordinate system. Therefore, a technical solution that can improve this asymmetry in the electromagnetic field distribution is required. Summary of the Invention [Problem to be solved by the invention]

[0011] The technical objective of the present invention to solve the above-mentioned problems is to provide a substrate processing apparatus that can improve asymmetry when the electromagnetic field distribution becomes asymmetric due to the separation space between both ends of the coil unit. [Means for solving the problem]

[0012] In order to achieve the above technical objectives, the substrate processing apparatus of the present invention is a substrate processing apparatus for processing a substrate, and includes: a chamber having an internal space; a support unit for supporting the substrate in the internal space; a gas supply unit for supplying a processing gas to the internal space; a window covering an upper end of the internal space; a coil unit disposed above the window; a power supply unit for applying high frequency power to the coil unit; and a magnetic regulator disposed above the coil unit, in which an eddy current is generated by electromagnetic induction by the coil unit.

[0013] According to one embodiment, one end of the coil portion is bent to communicate with the magnetic regulator.

[0014] According to one embodiment, both ends of the coil portion are bent to form a spaced apart space at a predetermined interval.

[0015] According to an embodiment, one end of the coil portion is bent to form a first bent region, and the first bent region is electrically connected to the magnetic regulator.

[0016] According to one embodiment, the magnetic regulator is grounded, and the coil unit is electrically connected to the magnetic regulator and grounded.

[0017] According to one embodiment, the magnetic regulator further includes a coil exposure hole, and the other end of the coil portion is bent to form a second bent region, the second bent region being exposed through the coil exposure hole, and the second bent region passing through the coil exposure hole is spaced apart from an inner surface of the coil exposure hole by a predetermined distance or more.

[0018] According to an embodiment, the coil unit further includes a cover-side region disposed horizontally with the window, and the cover-side region is disposed at a predetermined distance or more from the magnetic regulator.

[0019] According to one embodiment, the magnetic regulator is made of a conductive metal material.

[0020] According to one embodiment, the magnetic regulator is magnetically induced by the coil portion to generate an eddy current, and the thickness of the magnetic regulator is greater than the surface depth for the frequency of the eddy current.

[0021] According to one embodiment, the magnetic regulating body is formed with linear holes along a line path extending from the center point of the body toward the outer edge, and the linear holes are composed of a plurality of holes, which are arranged in a radial pattern with respect to the center point.

[0022] According to one embodiment, the magnetic adjustment body further includes a coil exposure hole, and the linear hole is formed only in a certain area to cover the vicinity of the coil exposure hole.

[0023] According to an embodiment, the magnetic regulator further includes a coil exposure hole, and the magnetic regulator includes a plurality of linearly spaced holes in a predetermined area including the coil exposure hole.

[0024] According to one embodiment, the magnetic adjusting body is formed of a plurality of pieces stacked one on top of the other, electrically connected to one end of the coil unit, and grounded.

[0025] According to one embodiment, the magnetic regulator is formed by arranging a plurality of arc-shaped holes with different radii concentrically around a central point.

[0026] According to one embodiment, the magnetic adjusting body is composed of a plurality of magnetic adjusting bodies, which are arranged in a radial pattern with a predetermined distance between them. [Effects of the Invention]

[0027] In the case where the electromagnetic field distribution is asymmetric due to the space between both ends of the coil unit, the present invention has the effect of improving the asymmetric electromagnetic field distribution by using the magnetic adjuster. [Brief explanation of the drawings]

[0028] [Figure 1] FIG. 1 is a perspective view of a conventional inductively coupled plasma device in which an RF coil is attached to a window. [Figure 2] 2 is a profile of the electromagnetic field distribution around the RF coil shown in FIG. 1. [Figure 3] FIG. 1 is a perspective view of a conventional inductively coupled plasma device in which an RF coil is attached to a window. [Figure 4] 4 is a profile of the electromagnetic field distribution around the RF coil shown in FIG. 3. [Figure 5] 1 is a configuration diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 6] 6 is a perspective view of the first magnetic adjustment body, the coil unit, and the window shown in FIG. 5, viewed obliquely. FIG. [Figure 7] 6 is a profile showing a current flow in the coil portion shown in FIG. 5. [Figure 8] 6 is a profile showing a current flow in the first magnetic adjusting element shown in FIG. 5; [Figure 9] 10 is a perspective view of a second magnetic adjustment body, a coil unit, and a window in a substrate processing apparatus according to another embodiment of the present invention, as viewed from an oblique direction. FIG. [Figure 10] 10 is a profile showing the electromagnetic field distribution magnitude for each distance from the center of the second magnetic controller to the outside for each of the second magnetic controller and the first magnetic controller shown in FIG. 9. [Figure 11] 10 is a perspective view of a third magnetic adjustment body, a coil unit, and a window of a substrate processing apparatus according to still another embodiment of the present invention, as viewed from an oblique direction. FIG. [Figure 12]10 is a perspective view of a fourth magnetic adjustment body, a coil unit, and a window of a substrate processing apparatus according to still another embodiment of the present invention, as viewed obliquely. FIG. [Figure 13] 11A and 11B are electromagnetic field profiles showing the magnitude of the electromagnetic field from the center point toward the outer edge of each of the first magnetic regulating body shown in FIG. 6, the third magnetic regulating body shown in FIG. 11, and the fourth magnetic regulating body shown in FIG. 12. [Figure 14] FIG. 10 is a configuration diagram of a substrate processing apparatus according to still another embodiment of the present invention. [Figure 15] FIG. 10 is a configuration diagram of a substrate processing apparatus according to still another embodiment of the present invention. [Figure 16] FIG. 10 is a configuration diagram of a substrate processing apparatus according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0029] Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. In this case, when a part of the entire specification is said to "include" a certain component, this does not mean that it controls other components, but that it may further include other components, unless otherwise specified. Furthermore, terms such as "... unit" used in the specification mean a unit that processes at least one function or operation when describing electronic hardware or electronic software, and mean a single part, function, use, fulcrum, or driving element when describing a mechanical device. Furthermore, hereinafter, the same reference numerals will be used to describe identical or similar components, and redundant descriptions of identical components will be omitted.

[0030] Figure 5 is a configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. Figure 6 is a perspective view of the first magnetic adjuster, coil unit, and window shown in Figure 5, viewed from an oblique direction. Figure 7 is a profile showing current flow in the coil unit shown in Figure 5. Figure 8 is a profile showing current flow in the first magnetic adjuster shown in Figure 5.

[0031] As shown in Figures 5 and 6, a substrate processing apparatus according to one embodiment of the present invention includes a chamber 10, a support unit 20, a coil unit 30, a window 40, and a first magnetic adjustment body 50, and further includes a gas supply unit 11 and a power supply unit 12.

[0032] The chamber 10 is formed in a housing shape having an internal space in which the support unit 20, window 40, and first magnetic control body 50 are housed. In this case, the chamber 10 has the window 40 attached to its upper region, and the inner coil 30 and the outer coil 30 are disposed above the window 40. The chamber 10 also has a process gas supply unit 11 for supplying process gas necessary for etching a substrate using plasma, and a gas exhaust unit (not shown) for exhausting process gas and process by-products. The chamber 10 may also be configured with various additional devices necessary for the process of etching a substrate using plasma, and detailed description of these additional devices will be omitted so as not to obscure the gist of the present invention.

[0033] The supporting unit 20 supports the substrate w1. In this embodiment, the supporting unit 20 is configured as an electrostatic chuck (ESC) that can attract and fix the substrate w1 to prevent it from moving during processing. However, the present invention is not limited to an electrostatic chuck and can be implemented with various technical configurations for supporting the substrate w1. Also, in this embodiment, the substrate w1 is formed as a wafer. However, the present invention is not limited to a wafer and can be implemented with various substrates w1, such as a display panel. Furthermore, the supporting unit 20 can be used as a cathode electrode that generates radio frequency power by being electrically connected to a biased cathode radio frequency matching box to generate plasma using radio frequency power. However, the present invention is not limited to a cathode electrode and can be implemented with various types of cathode electrodes by changing the structure on which the substrate w1 is seated. In addition, the support unit 20 may further include a focus ring for preventing the electrostatic chuck from being etched or the corners of the substrate w1 from being over-etched, a cooling system for dissipating heat, etc., but detailed descriptions of these additional components will be omitted so as not to obscure the gist of the present invention.

[0034] The window 40 is coupled to the upper region of the chamber 10 and seals the upper region of the chamber 10, preventing the discharge of process gases and process by-products outside the upper region of the chamber 10 and preventing the inflow of external air. The window 40 is formed of a dielectric material, which functions as an insulator when an electromagnetic field is not formed and is charged when an electromagnetic field is formed, blocking reverse current and preventing arc discharge. The window 40 may be formed of a dielectric material such as ceramic, glass, or quartz. In this case, the window 40 may further have a process gas inlet hole through which the process gas is introduced, if necessary, and may have a variety of structural shapes for connection with the chamber 10.

[0035] The coil unit 30 is composed of a conductive coil and is arranged in a specific path. As shown in FIGS. 1 and 3, the coil unit 30 includes a cover-side region 31 that is horizontally disposed above the window 40, a first bent region 32 that is bent at one end to electrically connect to the first magnetic control body 50, and a second bent region 33 that is bent at the other end to communicate with the coil exposure hole 52 of the first magnetic control body 50. In this embodiment, the cover-side region 31 is arranged in a circular path. However, the coil unit 30 is not limited to the shape shown in the drawings and may be arranged in various shapes and paths. The coil unit 30 receives high-frequency power from the power supply 12 to generate an electromagnetic field in the region between the substrate w1 and the window 40. The electromagnetic field generated by the coil unit 30, together with the process gas, forms a plasma atmosphere between the substrate w1 and the window 40.

[0036] In this embodiment, the coil part 30 has a separation space 3a formed between the first bending region 32 and the second bending region 33. In this case, the separation space 3a prevents an arc from occurring between the first bending region 32 and the second bending region 33, but at this time, the electromagnetic field formed in the separation space 3a is relatively weaker than in other regions, which induces asymmetry of the electromagnetic field.

[0037] The first magnetic controller 50 is formed in a plate shape and covers the window 40 with the coil unit 30 sandwiched therebetween. The first magnetic controller 50 also has a protrusion 51 formed near the center, which provides a coupling area to which a fastening member (not shown), such as a clamp, can be attached to secure the first magnetic controller 50. When the coil unit 30 is magnetically induced as shown in FIG. 7, eddy currents are generated in the first magnetic controller 50 in a direction opposite to the magnetic induction direction of the coil unit 30 as shown in FIG. 8. The generated eddy currents cause the electromagnetic field generated by the coil unit 30 to be concentrated around the surface of the coil unit 30. In this case, the electromagnetic field concentrated around the surface of the coil unit 30 is concentrated near the separation space 3a without being dispersed, thereby improving the asymmetrical electromagnetic field distribution near the separation space 3a compared to when the first magnetic controller 50 is not present. In addition, the first magnetic control body 50 shields the electromagnetic field generated by the coil unit 30 from being radiated toward the chamber 10, thereby improving the uniformity of the electromagnetic field so that plasma is not generated at a fulcrum outside the region between the window 40 and the substrate w1 or toward the chamber 10.

[0038] The first magnetic control body 50 further includes a coil exposure hole 52 that is connected to the second bent region 33 of the coil body 30. The second bent region 33 of the coil body 30 disposed within the coil exposure hole 52 is spaced apart from the inner surface of the coil exposure hole 52 by a predetermined distance or more, thereby preventing yoking from occurring between the coil body 30 and the first magnetic control body 50. In addition, the cover-side region 31 of the coil body 30, which is disposed horizontally to the window 40, is spaced apart from the first magnetic control body 50 by a predetermined distance or more, thereby preventing yoking from occurring between the coil body 30 and the first magnetic control body 50.

[0039] Meanwhile, the first bent region 32 of the coil unit 30 is in contact with and electrically connected to the first magnetic control unit 50, which is grounded. Therefore, since the coil unit 30 is electrically connected to the first magnetic control unit 50 and grounded, the impedance of the coil unit 30 is reduced by the first magnetic control unit 50. This improves efficiency by allowing a higher current to flow through the coil unit 30, widening the electromagnetic field near the space 3a separating the coil unit 30 and improving the asymmetry of the electromagnetic field distribution. Furthermore, since the coil unit 30 is electrically connected to the grounded first magnetic control unit 50 and has a lower impedance, the voltage applied to the coil unit 30 can be reduced. Therefore, the etching rate of the substrate w1 due to ion irradiation is significantly reduced, reducing particle generation and improving yield.

[0040] In this case, the cover-side region 31 of the coil unit 30, which is arranged horizontally on the window 40, is spaced a certain distance from the first magnetic control body 50, and the impedance is adjusted according to the distance from the first magnetic control body 50. For example, the impedance of the coil unit 30 may be 103 Ω when the first magnetic control body 50 is not present, 43 Ω when the distance between the cover-side region 31 arranged horizontally on the window 40 and the first magnetic control body 50 is 5 mm, and 56 Ω when the distance between the cover-side region 31 arranged horizontally on the window 40 and the first magnetic control body 50 is 10 mm. In this way, by adjusting the distance between the cover-side region 31 arranged horizontally on the window 40 and the first magnetic control body 50, the coil unit 30 can adjust the overall impedance balance of the coil unit 30 and uniformly adjust the plasma density while reducing impedance dispersion caused by design tolerances of the coil unit 30 itself.

[0041] In addition, the first magnetic control body 50 is formed of a conductive metal material so that eddy currents can be generated by electromagnetic induction of the coil unit 30. More preferably, the first magnetic control body 50 can be formed of copper, aluminum, silver, or an alloy of a combination thereof, or a conductive metal material coated with copper, aluminum, or silver, thereby improving power efficiency and reducing the asymmetry of the electromagnetic field distribution so that eddy currents are not converted into heat.

[0042] In addition, when eddy currents are generated by magnetic induction from the coil unit 30, the thickness of the first magnetic regulating body 50 is formed to be greater than the surface depth corresponding to the frequency of the eddy currents, thereby minimizing eddy current loss and improving the asymmetry of the electromagnetic field distribution.

[0043] 9 is a perspective view of a second magnetic controller, a coil unit, and a window in a substrate processing apparatus according to another embodiment of the present invention, and FIG. 10 is a profile showing the electromagnetic field distribution magnitude for each distance from the center of the second magnetic controller to the outside for each of the second magnetic controller and the first magnetic controller shown in FIG.

[0044] A substrate processing apparatus according to another embodiment of the present invention, as shown in FIG. 9, includes the chamber 10, support unit 20, coil unit 30, and window 40 described above, and further includes a second magnetic control body 60. In this embodiment, redundant descriptions of the chamber 10, support unit 20, coil unit 30, and window 40 will be omitted, and the description will focus on the second magnetic control body 60.

[0045] The second magnetic control unit 60 is formed in a plate shape and is formed in a shape that covers the window 40 with the coil unit 30 sandwiched therebetween. The second magnetic control unit 60 also has first linear holes 61 formed in a line path that extends from the center point of the body toward the outer edge, and the first linear holes 61 are formed in a radial shape so that they are arranged in a radial shape from the center point of the second magnetic control unit 60. As shown in Figure 10, the first linear holes 61 adjust the impedance of the second magnetic control unit 60 and also make the electromagnetic field near the center line of the coil unit 30 larger than the electromagnetic field formed by the first magnetic control unit 50, thereby expanding the electromagnetic field near the separation space 3a and improving the asymmetry of the electromagnetic field.

[0046] Meanwhile, unlike the second magnetic regulator 60 described above in which the first linear holes 61 are arranged in a radial shape, the magnetic regulator may have second linear holes arranged in a radial shape only in a partial area in order to increase the electromagnetic field near the coil exposure holes 52.

[0047] 11 to 13, Fig. 11 is a perspective view of a third magnetic controller, a coil unit, and a window of a substrate processing apparatus according to another embodiment of the present invention, and Fig. 12 is a perspective view of a fourth magnetic controller, a coil unit, and a window of a substrate processing apparatus according to another embodiment of the present invention, and Fig. 13 is an electromagnetic field profile showing the magnitude of the electromagnetic field from the center to the outer periphery of each of the first magnetic controller shown in Fig. 6, the third magnetic controller shown in Fig. 11, and the fourth magnetic controller shown in Fig. 12.

[0048] As shown in Figures 11 and 12, a substrate processing apparatus according to another embodiment of the present invention includes the chamber 10, support unit 20, coil unit 30, and window 40 as described above, and is formed with a third magnetic control body 70 or a fourth magnetic control body 80. In this embodiment, redundant descriptions of the chamber 10, support unit 20, coil unit 30, and window 40 will be omitted, and the third magnetic control body 70 and the fourth magnetic control body 80 will be mainly described.

[0049] The third magnetic control body 70 is formed in a plate shape and covers the window 40 with the coil part 30 sandwiched therebetween. The third magnetic control body 70 also has second linear holes 71 extending from the center toward the outer edge, which are formed within a certain angle range but are radially shaped to cover the vicinity of the coil exposure hole 52.

[0050] The fourth magnetic control body 80 is formed in a plate shape and covers the window 40 with the coil unit 30 sandwiched therebetween. The fourth magnetic control body 80 also has a plurality of linear spaced holes 81 formed in a certain area including the coil exposure hole 52. In this case, the linear direction of the spaced holes 81 is oriented toward the central axis of the fourth magnetic control body 80.

[0051] As shown in FIG. 13, the third magnetic regulator 70 and the fourth magnetic regulator 80 increase the magnitude of the electromagnetic field at the coil exposure hole 52 compared to when the magnetic regulator is not formed, thereby improving the asymmetry of the electromagnetic field generated near the coil exposure hole 52.

[0052] In particular, the fourth magnetic regulating body 80, when the separation hole 81 is formed, can greatly increase the magnitude of the electromagnetic field at the coil exposure hole 52 compared to the third magnetic regulating body 70. Therefore, even if the position or shape of the coil part 30 changes due to interference with other components, etc., and the electromagnetic field near the coil exposure hole 52 is significantly reduced, the magnitude of the electromagnetic field near the coil exposure hole 52 can be increased, thereby improving the asymmetry of the electromagnetic field.

[0053] Meanwhile, referring to FIG. 14, FIG. 14 is a structural view of a substrate processing apparatus according to still another embodiment of the present invention.

[0054] A substrate processing apparatus according to another embodiment of the present invention, as shown in FIG. 14, includes the chamber 10, support unit 20, coil unit 30, and window 40 as described above, and also includes a fifth magnetic control body 90. In this embodiment, redundant descriptions of the chamber 10, support unit 20, coil unit 30, and window 40 will be omitted, and the description will focus on the fifth magnetic control body 90.

[0055] The fifth magnetic control body 90 is formed in a plate shape and covers the window 40 with the coil unit 30 in between. A plurality of fifth magnetic control bodies 90 are stacked one on top of the other. In this case, the stacked fifth magnetic control bodies 90 are electrically connected to each other. The fifth magnetic control body 90 is also electrically connected to the first bent region 32 of the coil unit 30. The fifth magnetic control body 90 is also grounded.

[0056] As described above, the fifth magnetic adjusting body 90 electrically connected to the coil unit 30 is formed by stacking a plurality of units and grounding them, which can significantly reduce the impedance of the coil unit 30 compared to when it is formed by a single unit. This reduces the dispersion of impedance caused by the design tolerance of the coil unit 30 itself, and adjusts the overall impedance balance of the coil unit 30 to uniformly adjust the plasma density.

[0057] Referring further to FIG. 15, FIG. 15 is a structural view of a substrate processing apparatus according to still another embodiment of the present invention.

[0058] A substrate processing apparatus according to another embodiment of the present invention, as shown in FIG. 15, includes the chamber 10, support unit 20, coil unit 30, and window 40 as described above, and is formed with a sixth magnetic control body 100. In this embodiment, redundant descriptions of the chamber 10, support unit 20, coil unit 30, and window 40 will be omitted, and the description will focus on the sixth magnetic control body 100.

[0059] The sixth magnetic control element 100 is formed in a plate shape and covers the window 40 with the coil unit 30 sandwiched therebetween. The sixth magnetic control element 100 is also formed with a plurality of arc-shaped holes 101 arranged concentrically around the center point and with different radii. In this case, the arc-shaped holes 101 may be arranged at regular intervals near the coil exposure hole 52.

[0060] The sixth magnetic adjusting body 100 having the arc-shaped holes 101 formed therein can greatly increase the magnitude of the electromagnetic field at the coil exposure holes 52. Therefore, even if the position or shape of the coil part 30 changes due to interference with other components, etc., and the electromagnetic field near the coil exposure holes 52 is greatly reduced, the electromagnetic field near the coil exposure holes 52 can be increased, thereby improving the asymmetry of the electromagnetic field.

[0061] Referring to FIG. 16, it is a block diagram of a substrate processing apparatus according to still another embodiment of the present invention.

[0062] A substrate processing apparatus according to another embodiment of the present invention, as shown in FIG. 16, includes the aforementioned chamber 10, support unit 20, coil unit 30, and window 40, and is formed with a seventh magnetic control body 110. In this embodiment, redundant descriptions of the chamber 10, support unit 20, coil unit 30, and window 40 will be omitted, and the description will focus on the seventh magnetic control body 110.

[0063] The seventh magnetic control element 110 has a sectorial plate shape and covers the window 40 with the coil unit 30 sandwiched between them. A plurality of seventh magnetic control elements 110 are radially arranged with a predetermined distance between them. The distance between the seventh magnetic control elements 110 can be selectively adjusted. The other ends of the coil units 30 are exposed through the space between the seventh magnetic control elements 110. The seventh magnetic control element 110 increases the electromagnetic field near the center line of the coil unit 30 compared to the electromagnetic field generated by the first magnetic control element 50, thereby expanding the electromagnetic field near the space 3a and improving the asymmetry of the electromagnetic field.

[0064] As described above, the present invention has been described using specific details such as concrete components and limited embodiments and drawings, but this is provided only to facilitate a more general understanding of the present invention, and the present invention is not limited to the above embodiments. Various modifications and variations can be made from such descriptions by those having ordinary knowledge in the field to which the present invention pertains.

[0065] Therefore, the concept of the present invention should not be limited to the described embodiments, but should encompass not only the scope of the claims described below, but also all things that are equivalent to or have equivalent modifications within the scope of the claims.

Claims

1. In a substrate processing apparatus for processing a substrate, a chamber having an interior space; a support unit that supports the substrate in the internal space; a gas supply unit for supplying a processing gas to the internal space; a window covering an upper end of the interior space; a coil portion disposed above the window; a power supply unit that applies high-frequency power to the coil unit; a magnetic regulator disposed above the coil unit, the magnetic regulator being electromagnetically induced by the coil unit to generate an eddy current.

2. The substrate processing apparatus of claim 1 , wherein the coil portion is disposed in a state where one end of the coil portion is bent to communicate with the magnetic adjuster.

3. The substrate processing apparatus of claim 1 , wherein both ends of the coil portion are bent to form a separation space that is spaced apart at a predetermined interval.

4. The coil portion has one end bent to form a first bent region, The substrate processing apparatus of claim 1 , wherein the first bent region is electrically connected to the magnetic regulator.

5. The magnetic adjuster is grounded; The substrate processing apparatus of claim 4 , wherein the coil unit is electrically connected to the magnetic regulator and is grounded.

6. The magnetic adjustment body further has a coil exposure hole formed therein. The other end of the coil portion is bent to form a second bent region. the second bent region is exposed through the coil exposure hole; The substrate processing apparatus of claim 5 , wherein the second bending region passing through the coil exposure hole is spaced apart from an inner surface of the coil exposure hole by a predetermined distance or more.

7. The coil portion further includes a cover-side region that is horizontally disposed with respect to the window, The substrate processing apparatus of claim 6 , wherein the cover side area is spaced apart from the magnetic adjuster by a predetermined distance or more.

8. The substrate processing apparatus of claim 1 , wherein the magnetic regulator is made of a conductive metal material.

9. the magnetic adjusting body is magnetically induced by the coil portion to generate an eddy current; 2. The substrate processing apparatus according to claim 1, wherein the thickness of the magnetic adjusting body is greater than the surface depth for the frequency of the eddy current.

10. The magnetic adjustment body is formed with a linear hole on a line path that extends from the center point of the body toward the outer periphery, The substrate processing apparatus of claim 1 , wherein the linear holes are a plurality of holes arranged in a radial pattern around the central point.

11. The magnetic adjustment body further has a coil exposure hole formed therein. The substrate processing apparatus of claim 10 , wherein the linear hole is formed only in a certain area so as to cover a neighborhood of the coil exposure hole.

12. The magnetic adjustment body further has a coil exposure hole formed therein.

2. The substrate processing apparatus of claim 1, wherein the magnetic regulator has a plurality of linearly spaced holes in a predetermined area including the coil exposure hole.

13. 2. The substrate processing apparatus of claim 1, wherein the magnetic adjustment body is formed of a plurality of magnetic adjustment bodies stacked one on top of the other, electrically connected to one end of the coil unit, and grounded.

14. 2. The substrate processing apparatus of claim 1, wherein the magnetic adjuster is formed by arranging a plurality of arc-shaped holes with different radii concentrically around a center point.

15. 2. The substrate processing apparatus of claim 1, wherein the magnetic adjustment body is a plurality of magnetic adjustment bodies arranged in a radial pattern with a predetermined distance between them.

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