Arc-resistant electrostatic chuck and arc-reducing plug for electrostatic chuck

Abstract

The arc-resistant electrostatic chuck includes a base plate including a first gas supply hole for supplying a heat transfer gas through the base plate and a first cavity disposed on a first surface of the base plate and in fluid communication with the first gas supply hole. An upper ceramic layer is disposed above the base plate and includes a second cavity on its first surface. A bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region. A first plug is disposed within the first cavity of the base plate. The upper ceramic layer is disposed above the first plug and includes N gas supply holes with outlets disposed within the second cavity, where N is an integer greater than 20. The inlets of the N gas supply holes are disposed within the buffer region.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 449,983, filed March 4, 2023. The entire disclosure of the above application is incorporated herein by reference.

[0002] The present disclosure relates to substrate processing systems, and more particularly to arc-resistant electrostatic chucks. [Background technology]

[0003] The background description provided herein is intended to present the contents of the present disclosure generally. Work by the presently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing systems perform processes on substrates, such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. During processing, the substrate is positioned on a substrate support, such as an electrostatic chuck (ESC), in a processing chamber. A gas delivery system supplies a gas or vapor mixture to the processing chamber to process the substrate. A plasma can be used to ignite the gas mixture in the processing chamber to enhance a chemical reaction. Summary of the Invention

[0005] The arc-resistant electrostatic chuck includes a base plate including a first gas supply hole for supplying a heat transfer gas through the base plate and a first cavity disposed on a first surface of the base plate and in fluid communication with the first gas supply hole. An upper ceramic layer is disposed above the base plate and includes a second cavity on its first surface. A bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region. A first plug is disposed within the first cavity of the base plate. The upper ceramic layer is disposed above the first plug and includes N gas supply holes with outlets disposed within the second cavity, where N is an integer greater than 20. The inlets of the N gas supply holes are disposed in the buffer region.

[0006] In other features, N is in the range of 300 to 1200. The N gas supply holes have diameters in the range of 3 μm to 30 μm. The N gas supply holes are laser drilled. The first plug includes a porous plug. The porous plug has a porosity in the range of 30% to 50% and includes open pores.

[0007] In other features, the first plug comprises a multi-lumen plug including P gas feed holes oriented at a predetermined angle relative to the vertical, where P is an integer greater than 20. The predetermined angle is in the range of 0.5° to 5°. P is in the range of greater than 100 to less than 1000. The first multi-lumen plug includes M gas feed holes and is disposed in a third cavity on the second surface of the upper ceramic layer adjacent to the bonding layer, where M is an integer greater than 20.

[0008] In another feature, M is greater than 100. The diameter of the M gas supply holes is in the range of 3 μm to 10 μm.

[0009] In other features, the first multi-lumen plug further includes a solid core. M gas feed holes of the first multi-lumen plug penetrate vertically through the first plug radially outward from the solid core. The solid core has an outer diameter larger than the diameter along which the N gas feed holes are disposed. The first plug includes a porous plug. The porous plug has a porosity ranging from 30% to 50% and includes open pores. The first plug includes a second multi-lumen plug including a plurality of gas feed holes oriented at a predetermined angle relative to the vertical direction. The predetermined angle is between 0.5° and 5°. The first plug includes a second multi-lumen plug including T gas feed holes penetrating vertically through the second multi-lumen plug, where T is an integer greater than 20. The second multi-lumen plug further includes a solid core. The T gas feed holes are disposed radially outward from the solid core.

[0010] In another feature, the first plug includes a solid plug and a gas supply hole extending vertically through the solid plug. The gas supply hole has a diameter ranging from 100 μm to 500 μm. The solid plug includes a body having a "T"-shaped cross section and a flange extending outward from an upper surface of the body.

[0011] In other features, the second cavity in the upper ceramic layer includes a ridge and an annular plenum surrounding the ridge. The outlets of the N gas feed holes are disposed on the ridge. The solid plug includes a "T"-shaped body having an annular gas channel extending from a bottom surface thereof into the "T"-shaped body, and P gas feed holes extending from the annular gas channel to a top surface of the "T"-shaped body, where P is greater than 10.

[0012] In another feature, the first plug includes a first plug portion having a "T"-shaped cross-sectional outer contour, a cavity extending from a first surface, and a second plug portion having an inverted "T"-shaped body inserted into the cavity. The second plug portion includes a gas feed hole vertically penetrating the second plug portion, and the first plug portion includes P gas feed holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10. The P gas feed holes have diameters ranging from 20 μm to 150 μm. The P gas feed holes are arranged in a circular pattern, and P is less than 500.

[0013] In other features, a plenum is defined between the top surface of the second plug portion and the cavity of the first plug portion. The bottom of the first multi-lumen plug extends vertically into the buffer region. The first plug includes a body having a "T"-shaped cross section, a plenum extending horizontally within the body, and a gas channel extending from the bottom surface of the body to a position spaced from the plenum. P gas feed holes fluidly connect the gas channel to the plenum. Q gas feed holes fluidly connect the plenum to the top surface of the body, where P and Q are integers greater than 1.

[0014] In other features, the Q gas supply holes include 32 to 150 holes with diameters ranging from 30 μm to 80 μm. The P gas supply holes include 1 to 20 holes with diameters ranging from 100 μm to 200 μm. A lower portion of the first plug tapers inward away from the first cavity of the base plate.

[0015] The arc-resistant electrostatic chuck includes a base plate including a first gas supply hole for supplying a heat transfer gas and a first cavity disposed in the surface of the base plate and in fluid communication with the first gas supply hole. The upper ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the upper ceramic layer, an annular protrusion extending into the first cavity to define the gas supply hole, a plenum disposed below the annular protrusion, and a third cavity disposed below the plenum. The bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region adjacent to the first cavity. A first plug is disposed in the first cavity of the base plate. A first multi-lumen plug is disposed in the third cavity of the upper ceramic layer and includes N gas supply holes, where N is greater than 20.

[0016] In other features, N is in the range of 100 to 900. The N gas feed holes have diameters in the range of 3 μm to 10 μm. The N gas feed holes are laser drilled. The first plug includes a porous plug. The porous plug has a porosity in the range of 30% to 50% and includes open pores. The first plug includes a second multi-lumen plug including P gas feed holes, where P is an integer greater than 20. The second multi-lumen plug includes a solid core, and the P gas feed holes are disposed radially outward from the solid core. P is an integer in the range of 100 to less than 1000. The P gas feed holes have diameters in the range of 3 μm to 10 μm. The P gas feed holes of the second multi-lumen plug are oriented at a predetermined angle with respect to the vertical direction. The predetermined angle is in the range of 0.5° to 5°.

[0017] In other features, the first multi-lumen plug includes a solid core. The N gas feed holes are disposed radially outward of the solid core. The solid core has an outer diameter larger than the first diameter of the gas feed holes. The first multi-lumen plug includes a solid core, and the second multi-lumen plug also includes a solid core. The first plug includes a solid plug with gas feed holes vertically penetrating the solid plug. The solid plug has a "T"-shaped cross section and includes a flange extending outward from the body of the solid plug.

[0018] In other features, the first plug includes a "T" shaped body including an annular gas channel extending from a bottom surface into the "T" shaped body. A gas supply hole extends from the annular gas channel to a top surface of the "T" shaped body.

[0019] In other features, the first plug includes a first plug portion having a "T"-shaped cross-sectional contour and a cavity extending within the first plug portion. The second plug portion has a "T"-shaped body that is inserted into the cavity of the first plug portion. The second plug portion includes one or more gas feed holes that extend vertically through the second plug portion. The first plug portion includes one or more gas feed holes that extend from the cavity to a top surface of the first plug portion.

[0020] In other features, a bottom of the first multi-lumen plug extends into the buffer region, and the first plug includes a body, a plenum extending horizontally within the body, a gas channel extending from a bottom surface of the body to a location spaced from the plenum, P gas feed holes fluidly connecting the gas channel to the plenum, and Q gas feed holes fluidly connecting the plenum to a top surface of the body, where P and Q are integers greater than 1.

[0021] In other features, the Q gas supply holes are disposed radially outward from the radially outer edge of the first multi-lumen plug. The Q gas supply holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm. The P gas supply holes include 1 to 20 holes having diameters ranging from 100 μm to 200 μm. A lower portion of the first plug tapers radially inward away from the first cavity of the base plate.

[0022] The arc-resistant electrostatic chuck includes a base plate including a first gas supply hole for supplying a heat transfer gas. The first cavity is disposed on the surface of the base plate and is in fluid communication with the first gas supply hole. The upper ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the upper ceramic layer. The gas supply hole fluidly connects the second cavity to a bottom surface of the upper ceramic layer. The bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region disposed adjacent to the first cavity. The multi-lumen plug is disposed within the first cavity and includes a solid core and T gas supply holes disposed around the solid core, where T is greater than 20.

[0023] In another feature, T is an integer ranging from 100 to less than 1000. The diameters of the T gas supply holes are in the range of 3 μm to 10 μm.

[0024] The arc-resistant electrostatic chuck includes a base plate including a first gas feed hole for supplying a heat transfer gas. The first cavity is disposed in a surface of the base plate and is in fluid communication with the first gas feed hole. The upper ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the upper ceramic layer. The gas feed hole fluidly connects the second cavity to a second surface of the upper ceramic layer. The bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region adjacent to the first cavity. The plug is disposed within the first cavity and includes a body, a plenum extending horizontally within the body, a gas channel extending from a bottom surface of the body to a position spaced from the plenum, P gas feed holes fluidly connecting the gas channel to the plenum, and Q gas feed holes fluidly connecting the plenum to a top surface of the body, where P and Q are integers greater than 1.

[0025] In other features, the Q gas feed holes are disposed radially outward of the P gas feed holes. The Q gas feed holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm. The P gas feed holes include 1 to 20 holes and have diameters ranging from 100 μm to 200 μm. A lower portion of the first plug tapers inward away from the first cavity of the base plate.

[0026] The arc-resistant electrostatic chuck includes a base plate including a first gas feed hole for supplying a heat transfer gas and a first cavity disposed in a surface of the base plate and in fluid communication with the first gas feed hole. The upper ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the upper ceramic layer. The gas feed hole fluidly connects the second cavity to a bottom surface of the upper ceramic layer. The bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region adjacent to the first cavity. The first plug includes a "T"-shaped body, an annular gas channel extending from the bottom surface into the "T"-shaped body, and P gas feed holes extending from the annular gas channel to a top surface of the "T"-shaped body, where P is an integer greater than 10.

[0027] In another feature, P is an integer ranging from 10 to less than 1000. The P gas supply holes have diameters ranging from 30 μm to 150 μm.

[0028] The arc-resistant electrostatic chuck includes a base plate including a first gas feed hole for supplying a heat transfer gas and a first cavity disposed in the surface of the base plate in fluid communication with the first gas feed hole. An upper ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the upper ceramic layer. The gas feed hole fluidly connects the second cavity to a bottom surface of the upper ceramic layer. The bonding layer is configured to bond the base plate to the upper ceramic layer and includes a buffer region adjacent to the first cavity. The first plug includes a first plug portion having a "T"-shaped cross-sectional outer shape and a cavity extending upward from the bottom surface of the first plug portion. The second plug portion has a "T"-shaped body that is inserted into the cavity of the first plug portion. The second plug portion includes one or more gas feed holes vertically penetrating the second plug portion. The first plug portion includes P gas feed holes extending from the cavity to the top surface of the first plug portion. where P is an integer greater than 10.

[0029] In another feature, P is an integer ranging from 10 to less than 1000. The P gas supply holes have diameters ranging from 30 μm to 150 μm. The first plug portion and the second plug portion are made of ceramic.

[0030] An arc reduction plug for a thermal transfer gas hole in a base plate of an electrostatic chuck includes a body having a "T"-shaped cross section including a flange. An annular gas channel extends from a first surface of the body distal from the flange. P gas feed holes extend from the annular gas channel to a second surface of the body adjacent the flange, where P is an integer in the range of 10 to less than 1000. The P gas feed holes have diameters in the range of 30 μm to 150 μm. The body is made of ceramic.

[0031] An arc reduction plug for a thermal transfer gas hole in a base plate of an electrostatic chuck includes a first plug portion having a "T"-shaped cross-sectional outer contour and a cavity extending upward from a first surface of the first plug portion. A second plug portion has a "T"-shaped cross-section that is inverted and inserted into the cavity of the first plug portion. The second plug portion includes one or more gas feed holes that extend vertically through the second plug portion. The first plug portion includes P gas feed holes that extend from the cavity to the top surface of the first plug portion, where P is an integer ranging from 10 to less than 1000.

[0032] In other features, the P gas supply holes have a diameter in the range of 30 μm to 150 μm.The first plug portion and the second plug portion are made of ceramic.

[0033] An arc reduction plug for a thermal transfer gas hole of an electrostatic chuck includes a body and a plenum extending horizontally within the body. A gas channel extends from a bottom surface of the body to a location spaced from the plenum. P gas feed holes fluidly connect the gas channel to the plenum. Q gas feed holes fluidly connect the plenum to a top surface of the body, where P and Q are integers greater than 1.

[0034] In other features, the Q gas feed holes are disposed radially outward of the P gas feed holes. The Q gas feed holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm. The P gas feed holes include 1 to 20 holes and have diameters ranging from 100 μm to 200 μm. A lower portion of the first plug tapers inward.

[0035] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0036] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0037] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system including an arc-resistant electrostatic chuck (ESC) according to the present disclosure.

[0038] [Figure 2] FIG. 2 is a partial cross-sectional side view showing an example of an arc-resistant ESC according to the present disclosure.

[0039] [Figure 3] FIG. 3 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 4] FIG. 4 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 5] FIG. 5 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 6A] FIG. 6A is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 6B] FIG. 6B is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 6C] FIG. 6C is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 6D] FIG. 6D is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 7] FIG. 7 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 8A] FIG. 8A is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 8B] FIG. 8B is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 8C] FIG. 8C is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 8D] FIG. 8D is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 9A] FIG. 9A is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure.

[0040] [Figure 9B] FIG. 9B is a partial cross-sectional side view illustrating an example of a top ceramic layer according to the present disclosure. [Figure 9C] FIG. 9C is a partial cross-sectional side view illustrating an example of an upper ceramic layer according to the present disclosure.

[0041] [Figure 10] FIG. 10 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure. [Figure 11] FIG. 11 is a partial cross-sectional side view illustrating a further example of an arc-resistant ESC according to the present disclosure.

[0042] [Figure 12] FIG. 12 is a partial cross-sectional side view illustrating an example plug according to the present disclosure. [Figure 13] FIG. 13 is a partial cross-sectional side view illustrating an example plug according to the present disclosure. [Figure 14] FIG. 14 is a partial cross-sectional side view illustrating an example plug according to the present disclosure.

[0043] [Figure 15] FIG. 15 is a partial cross-sectional side view illustrating a further example of an arc-resistant electrostatic chuck according to the present disclosure. [Figure 16] FIG. 16 is a partial cross-sectional side view illustrating a further example of an arc-resistant electrostatic chuck according to the present disclosure.

[0044] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0045] The ESC includes a base plate, an upper ceramic layer, and a bonding layer that attaches the upper ceramic layer to the base plate. The base plate may include thermal cooling passages for receiving a cooling fluid to control the temperature of the ESC and the substrate during processing. The upper ceramic layer or plate may include a resistive heater for controlling the temperature of the substrate.

[0046] To cool the substrate, a thermally conductive gas such as helium (He) may be supplied to the backside of the substrate through multiple gas supply holes in the ESC. In low-voltage applications, a single linear vertical hole in the top ceramic layer and a ceramic sleeve in the base plate are used to block the direct line of sight between the plasma and the exposed metal surface, reducing the risk of arcing. In medium- and low-voltage applications, the ceramic sleeve is replaced with a porous plug to provide a higher withstand voltage threshold compared to using a ceramic sleeve. In medium-voltage applications, a porous plug is also placed in the top ceramic layer in addition to the ceramic sleeve in the base plate to reduce arcing.

[0047] While these solutions are suitable for low and medium voltage applications (e.g., <<10 kW), some semiconductor manufacturing processes use very high RF power (e.g., >10 kW) to generate the plasma. The increase in RF power corresponds to an increase in RF current and total voltage applied to the ESC. Some plasma etching processes may require significantly lower RF frequencies (e.g., 2 MHz, 400 kHz, or lower) than previously used frequencies (e.g., 13.6 MHz). The lower RF frequency further increases the RF voltage applied across the top ceramic layer of the ESC.

[0048] The high RF voltage applied across the top ceramic layer of the ESC can cause discharge or arcing between the substrate and baseplate and / or ignition of heat-transfer gases, such as He, in the gas supply holes. Arcing in the ESC typically causes catastrophic destruction of chamber components and the substrate and can cause damage to other chamber components. Furthermore, arcing requires the manufacturing process to be interrupted.

[0049] If ignition of the heat transfer gases occurs, destruction of the ESC can be either a catastrophic event or a gradual damage that affects many boards being processed, with component damage usually not being detectable until much later. In either case, ESC failure causes a significant loss in board production.

[0050] The present disclosure relates to arc-resistant ESCs that reduce arcing and / or ignition of thermal transfer gas in substrate processing systems that use plasma at high RF power levels (>>10 kW (e.g., >50 kW)). In some examples, the arc-resistant ESCs include various combinations of features, such as an upper ceramic layer including multiple gas holes disposed above thermal transfer gas holes in a base plate, a porous plug, a microlumen plug, a microlumen plug with a solid core, a sloped microlumen plug, a solid sleeve, a solid sleeve with an internal plenum, and / or one or more other structures that reduce arcing and ignition of thermal transfer gas.

[0051] 1, an example of a substrate processing system 10 with an arc-resistant ESC is shown. In the following example, the substrate processing system 10 performs etching using capacitively coupled plasma (CCP). Although CCP is shown, the arc-resistant ESC can also be used in other plasma-based processes. For example, the plasma may be generated using inductively coupled plasma (ICP), microwave plasma, remote plasma, etc.

[0052] The substrate processing system 10 includes a processing chamber 11 that encloses other components of the substrate processing system 10 and contains an RF plasma. The substrate processing system 10 includes an arc-resistant ESC 14 that includes an upper electrode 12 and a lower electrode 16. A substrate 18 is disposed on the arc-resistant ESC 14 between the upper electrode 12 and the lower electrode 16.

[0053] By way of example only, the upper electrode 12 may include a showerhead 20 for introducing and distributing process gases. Alternatively, the upper electrode 104 may comprise a conductive plate, and process gases may be introduced using an injector or another device. The base plate of the ESC 14 serves as the lower electrode 16.

[0054] An RF generation system 24 generates and outputs an RF voltage to either the upper electrode or the lower electrode. The other of the upper electrode and the lower electrode may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 24 may include an RF voltage generator 26 that generates an RF voltage that is supplied to the upper electrode 12 or the lower electrode 16 by a matching and distribution network 28.

[0055] An example of a gas delivery system 30 is shown in FIG. 1. The gas delivery system 30 includes one or more gas sources 32-1, 32-2, ..., and 32-N (collectively, gas sources 32), where N is an integer greater than 0. The gas sources provide one or more gas mixtures, inert gases, purge gases, etc. The gas sources 32 are connected to a manifold 40 by valves 34-1, 34-2, ..., and 34-N (collectively, valves 34) and mass flow controllers 36-1, 36-2, ..., and 36-N (collectively, mass flow controllers 36). The output of the manifold 40 is provided to the process chamber 11. By way of example only, the output of the manifold 40 is provided to the showerhead 20.

[0056] The heater 42 may be connected to a heater coil (not shown) disposed within the arc-resistant ESC 14 to heat the arc-resistant ESC 14. The heater 42 may be used to control the temperature of the arc-resistant ESC 14 and the substrate 18. Valves 50 and pumps 52 may be used to evacuate reactants from the processing chamber 11. A controller 60 may be used to control various components of the substrate processing system 10. By way of example only, the controller 60 may be used to control the flow of process gases, carrier gases, and precursor gases, as well as ignition and extinguishing of the plasma, removal of reactants, monitoring chamber parameters, etc. A heat transfer gas source 70 and valve 72 are configured to supply a heat transfer gas through the arc-resistant ESC 14 to the backside of the substrate 18, as described further below.

[0057] 2, an arc-resistant ESC 100 according to the present disclosure includes a base plate 120 having a plurality of vertical gas supply holes 126 for delivering heat transfer gas to the backside of the substrate. For clarity, the following description describes various components for reducing arcing and ignition of heat transfer gas in one vertical gas supply hole 126.

[0058] The base plate 120 includes a cavity 130 disposed adjacent to the top surface of the base plate 120. Vertical gas feed holes 126 extend from the bottom surface of the base plate 120 to the cavity 130. A porous plug 132 is disposed within the cavity 130. In some examples, the porous plug 132 is made of ceramic (e.g., alumina). In some examples, the porous plug 132 has a porosity in the range of 30% to 50% and includes open pores. In some examples, the cavity 130 and the porous plug 132 are cylindrical in shape.

[0059] The bonding layer 136 is disposed on the top surface of the base plate 120 to bond the upper ceramic layer 142 to the base plate 120. In some examples, the upper ceramic layer 142 has a thickness in the range of 0.5 mm to 1.5 mm. In some examples, the bonding layer 136 has a thickness in the range of 0.1 mm to 1 mm. The bonding layer 136 includes a buffer region 140 for allowing a heat transfer gas to pass through the bonding layer 136. The buffer region 140 defines a plenum between the upper ceramic layer 142 and the top surface of the base plate 120.

[0060] The upper ceramic layer 142 includes a cavity 144 disposed on its upper surface. The cavity 144 is disposed above the vertical gas feed holes 126. N gas feed holes 148 vertically penetrate the upper ceramic layer 142 above the porous plug 132. In some examples, N is greater than 20. In some examples, N is in the range of 300 to 1200. In some examples, the N gas feed holes 148 are drilled using a laser or other drilling device. In some examples, the N gas feed holes 148 have a first diameter in the range of 3 μm to 30 μm. In some examples, the upper ceramic layer 142 has a thickness in the range of 0.5 mm to 1 mm. In some examples, the N gas feed holes 148 are parallel to each other and axially parallel.

[0061] In some examples, the N gas feed holes 148 are disposed within a second diameter that is smaller than the third diameter of the porous plug 132 and / or the fourth diameter of the buffer region 140. In some examples, the third diameter of the porous plug 132 is larger than the fourth diameter of the buffer region 140.

[0062] Referring now to FIG. 3, another example of an arc-resistant ESC 150 similar to the arc-resistant ESC 100 is shown. A tilted multi-lumen plug 154 is used in place of the porous plug 132 of FIG. 2. In some examples, the tilted multi-lumen plug 154 includes gas feed holes 156 that are parallel to each other but offset from vertical by a predetermined angle. In some examples, the predetermined angle is determined based on the diameter of the gas feed holes 156 and the vertical height of the tilted multi-lumen plug 154 and is selected to block a direct line of sight. In some examples, the predetermined angle is in the range of 0.5° to 10° (e.g., 0.5° to 5°). In some examples, the diameter of the gas feed holes 156 is in the range of 3 μm to 40 μm. The tilted holes in the tilted multi-lumen plug 154 block a direct line of sight from the multi-lumen plug 210 to the base plate 120.

[0063] In some examples, the angled multi-lumen plug 154 is first fabricated with vertically extending gas feed holes 156. The angled multi-lumen plug 154 is cut at an angle relative to the lateral direction in which the gas feed holes 156 extend. A filler material 158, such as a paste, adhesive, or other chemically and / or plasma-resistant material, may be used to fill the cavities around the sides of the angled multi-lumen plug 154.

[0064] 4, another example arc-resistant ESC 200 is shown. In this example, a porous plug 132 is disposed within the cavity 130 of the base plate 120. The top ceramic layer 142 includes a cavity 208 disposed on a bottom surface of the top ceramic layer 142. The cavity 208 is vertically aligned with the vertical gas feed holes 126 and the porous plug 132.

[0065] Multi-lumen plug 210 is disposed within cavity 208 and includes a body and a plurality of gas feed holes 212 that extend vertically through the body and are parallel to one another. In some examples, the bottom of multi-lumen plug 210 and the bottom surface of upper ceramic layer 142 are flush with each other. In some examples, the body of multi-lumen plug 210 is made of ceramic (e.g., alumina). In some examples, the plurality of gas feed holes 212 includes between 100 and 1000 holes. In some examples, the plurality of gas feed holes 212 has a diameter in the range of 3 μm to 10 μm.

[0066] The upper ceramic layer 142 includes a plenum 214 disposed above the multi-lumen plug 210 (and cavity 208). An annular protrusion 218 extends above the plenum 214 and defines a gas feed hole 219. The cavity 144 is disposed above the annular protrusion 218 and the gas feed hole 219. In some examples, the plenum 214 has a diameter smaller than the diameter of the multi-lumen plug 210. In some examples, the gas feed hole 219 is smaller than the diameter of the plenum 214.

[0067] Referring now to FIG. 5, another example arc-resistant ESC 230 similar to the arc-resistant ESC 200 of FIG. 4 is shown. In this example, the multi-lumen plug 210 further includes a solid core 232 (e.g., without gas feed holes) concentrically disposed relative to the multi-lumen plug 210. The gas feed holes are disposed around the solid core 232. In some examples, the solid core has a diameter ranging from 0.8 mm to 1.5 mm. In some examples, the solid core 232 has a diameter larger than the gas feed holes 219 and smaller than the diameter of the plenum 214. In some examples, the diameter of the gas feed holes 219 is in the range of 0.1 mm to 0.5 mm. In some examples, the diameter of the gas feed holes 219 is in the range of 0.2 mm to 0.3 mm.

[0068] 6A-6D, other examples of arc-resistant ESCs are shown. In FIG. 6A, arc-resistant ESC 250 includes multi-lumen plug 210 disposed in upper ceramic layer 142 and multi-lumen plug 252 disposed within cavity 130 of base plate 120. In this example, multi-lumen plug 252 includes axially / vertically aligned gas feed holes 254. In some examples, the bottom surface of multi-lumen plug 252 is spaced from the bottom surface of cavity 130 to define plenum 254.

[0069] In Figure 6B, arc-resistant ESC 260 is similar to arc-resistant ESC 250 of Figure 6A. However, multi-lumen plug 210 in cavity 208 of top ceramic layer 142 further includes solid core 232. In Figure 6C, arc-resistant ESC 270 is similar to arc-resistant ESC 250 of Figure 6A. However, multi-lumen plug 210 does not include solid core 232, and multi-lumen plug 252 includes solid core 274. In some examples, solid core 274 of multi-lumen plug 252 has a diameter that is larger than the inner diameter of annular protrusion 218 and less than the diameter of multi-lumen plug 252.

[0070] In Figure 6D, arc-resistant ESC 280 is similar to arc-resistant ESC 250 of Figure 6A. However, multi-lumen plug 210 further includes solid core 232, and multi-lumen plug 252 further includes solid core 274.

[0071] 7, an arc-resistant ESC 300 includes a porous plug 132 disposed within a cavity 130 in a base plate 120. An upper ceramic layer 142 includes a multi-lumen plug 210 disposed within a cavity 208 on the bottom surface. Rather than an annular protrusion 218 disposed above a plenum 214 as in FIG. 6A, the upper ceramic layer 142 includes a plurality of gas feed holes 310 leading from the cavity 144 to the plenum 214.

[0072] In some examples, the plurality of gas supply holes 310 includes 2 to 50 holes with diameters ranging from 0.02 mm to 0.1 mm. In some examples, the plurality of gas supply holes 310 are arranged parallel to the axial / vertical direction. In some examples, the plurality of gas supply holes 310 are created using a laser or other drilling device. In some examples, the plurality of gas supply holes 310 are arranged within an outer diameter equal to or less than the diameter of the solid core 232 disposed within the underlying multi-lumen plug 210.

[0073] 8A-8D, various example arc-resistant ESCs are similar to the arc-resistant ESC 300 shown in FIG. 7. In the arc-resistant ESC 320 shown in FIG. 8A, the porous plug 132 of FIG. 7 is replaced with a multi-lumen plug 252. In the arc-resistant ESC 340 shown in FIG. 8B, the porous plug 132 of FIG. 7 is replaced with a multi-lumen plug 252 having a solid core 274. In FIG. 8C, as described above, the arc-resistant ESC 350 includes multiple gas feed holes 310 leading from the cavity 144 to the plenum 214. The multi-lumen plug 210 is disposed in the cavity 208, and the angled multi-lumen plug 154 is disposed in the cavity 130. As can be appreciated, the multi-lumen plug 210 may further include a solid core 232, as shown in FIG. 8D.

[0074] 9A-9C, another arc-resistant ESC 370 is shown. The top ceramic layer 142 includes a cavity 144. In FIG. 9A, a plurality of gas feed holes 310 are disposed in the bottom surface of the cavity 144. A plenum 214 is disposed below the plurality of gas feed holes 310. A multi-lumen plug 210 having a solid core 232 is disposed within the cavity 208 of the top ceramic layer 142 below the plenum 214.

[0075] A sleeve 374 is disposed within the cavity 130 and includes one or more gas feed holes 376 that extend vertically through the sleeve 374. In some examples, the sleeve 374 is solid and ceramic. In some examples, the one or more gas feed holes 376 are disposed at the center of the sleeve 374 and / or below and within the radially outer edge of the solid core 232. In some examples, the one or more gas feed holes 376 have a diameter in the range of 100 μm to 500 μm.

[0076] In some examples, cavity 130 includes an upper cavity portion 378 that extends radially outward near the top surface of base plate 120. In some examples, sleeve 374 has a "T" shaped cross section and includes a flange 380 that is received within upper cavity portion 378. Flange 380 provides improved protection as the upper corner of upper cavity portion 378 moves radially outward relative to the flow of heat transfer gas.

[0077] The solid core 232 of the multi-lumen plug 210 in the upper ceramic layer 142 provides sufficient shielding to block a direct line of sight to one or more gas feed holes 376 in the underlying sleeve 374. In some examples, the multi-lumen plug 210 extends below the bottom surface of the upper ceramic layer 142. In some examples, the gap from the bottom of the multi-lumen plug to the top surface of the sleeve is 20 μm to 100 μm or more, but 0.5 mm or less. Minimizing the gap toward the lower end of the range improves arcing and / or ignition protection. Additional protection can be provided by using a flange 380 on the sleeve 374 to prevent arcing to the base plate 120.

[0078] 9B shows a substrate 382 disposed on the upper ceramic layer 142. The upper surface of the upper ceramic layer 142 (above the plenum 214) may include a ridge 384 surrounded by an annular plenum 383 defined by a radially inner wall 385, a bottom surface 386, and a radially outer wall 388 within the cavity 144. In some examples shown, the vertical depth of the cavity 144 in the annular plenum 383 ranges from 70 μm to 150 μm, and the vertical depth of the cavity 144 above the ridge 384 ranges from 5 μm to 30 μm. The outlets of the gas supply holes 310 are disposed on the ridge 384.

[0079] In Figure 9C, cavity 144 is disk-shaped. A plurality of gas supply holes 310 are formed in the bottom surface of cavity 144. In Figure 9C, the vertical depth of cavity 144 is in the range of 70 µm to 150 µm.

[0080] 10 , an arc-resistant ESC 400 includes an upper ceramic layer 142 with a cavity 144. A bottom surface of the cavity 144 includes one or more gas feed holes 410 extending from the cavity 144 to the bottom surface of the upper ceramic layer 142. The one or more gas feed holes 410 in the upper ceramic layer 142 are disposed above the buffer region 140. In some examples, the one or more gas feed holes 410 include 1 to 5 holes having a diameter in a range of 80 μm to 150 μm.

[0081] The multi-lumen plug 252 is disposed within the cavity 130 and includes a solid core 274. In some examples, the pore size within the multi-lumen plug 252 ranges from 3 μm to 10 μm. In some examples, the diameter of the solid core 274 is larger than the outer diameter around one or more gas supply holes 410.

[0082] 11 , another arc-resistant ESC 420 is shown. A plug 424 includes a body defining a plenum 426 and a gas channel 428. One or more gas holes 430 connect the gas channel 428 to the plenum 426. One or more gas feed holes 432 and 434 are disposed between the plenum 426 and a top surface of the plug 424. In some examples, the gas feed holes 432 and 434 are disposed radially outward from the radially outer edges of the one or more gas feed holes 410. In some examples, the plug 424 is comprised of two parts, 337 and 438.

[0083] In some examples, the gas feed holes 432 and 434 include 32 to 150 holes with diameters ranging from 30 μm to 80 μm. In some examples, the one or more gas feed holes 410 include 1 to 5 holes with diameters ranging from 50 μm to 150 μm. In some examples, the plenum 426 has a diameter ranging from 3 mm to 5 mm and a height ranging from 50 μm to 200 μm. In some examples, the one or more gas feed holes 430 include 1 to 20 holes and have diameters ranging from 100 μm to 200 μm. In some examples, the lower portion of the sleeve 374 tapers inward from the surface of the cavity 130 (e.g., by a radial distance ranging from 0.1 mm to 1 mm) to increase tracking distance and prevent arcing. In some examples, the plug 424 is composed of two parts, as indicated by the broken line at 441.

[0084] 12-14, examples of plugs disposed within cavity 130 of base plate 120 are shown. In FIG. 12, plug 440 has a "T"-shaped cross-section and includes a body and a flange. Plug 440 includes an annular gas channel 442 extending upward from its bottom surface. Gas holes 446 extend from the top surface of plug 440 to annular gas channel 442. In some examples, gas holes 446 are disposed radially outward from the radially outer edges of one or more gas feed holes 410. In some examples, gas feed holes 446 include 10-300 holes and have diameters ranging from 30 μm to 150 μm.

[0085] 13, plug 470 has a "T"-shaped cross-sectional contour and includes a body and a flange. The body defines a cavity 472. Plug 470 includes a gas supply hole 476 extending upward from cavity 472. Plug 482 has a "T"-shaped cross-section and is inserted into cavity 472 in an inverted orientation relative to plug 470. Plug 482 further includes a gas channel 484 extending from a bottom surface of plug 482 to a top surface of plug 482. In some examples, a gap 480 is formed between the top surface of plug 482 and the opposing surface of cavity 472.

[0086] 14 shows gas feed holes 476 on the top surface of plug 470. In some examples, one or more rings of gas feed holes 476 are formed in plug 470 in a circular pattern. When multiple rings of gas feed holes 476 are used, the sets of circular patterns of gas feed holes 476 are concentric.

[0087] 15, another arc-resistant ESC 500 similar to the arc-resistant ESC 420 of FIG. 11 is shown. In FIG. 15, a multi-lumen plug 210 having a solid core 232 is positioned below the plenum 214 and above the plug 424. In some examples, the bottom surface of the multi-lumen plug 210 extends into the buffer region 140 and is spaced from the top surface of the plug 424. In some examples, the multi-lumen plug 210 extends between 10 μm and 150 μm into the buffer region 140. In some examples, the gas supply holes 432 are positioned radially outward of the outer diameter of the multi-lumen plug 210.

[0088] Referring now to Figure 16, another arc-resistant ESC 550 is shown that is similar to the arc-resistant ESC 500 of Figure 11. In Figure 16, a multi-lumen plug 210 having a solid core 232 is positioned below the plenum 214 and above a multi-lumen plug 252 having a solid core 274. In some examples, as described above, the bottom surface of the multi-lumen plug 210 extends into the buffer region 140 and is spaced from the top surface of the plug 424.

[0089] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, the true scope of the present disclosure should not be limited to such examples, as other modifications will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having particular features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in other embodiments and / or combined with any features of the other embodiments (even if such combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments for one another is within the scope of the present disclosure.

[0090] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Also, in the above disclosure, when a relationship between a first element and a second element is described, unless expressly described as "direct," the relationship may be a direct relationship, with no other intervening elements present between the first and second elements. However, an indirect relationship, with one or more intervening elements (spatial or functional) present between the first and second elements, is also possible. As used herein, the phrase "at least one of A, B, and C" should be interpreted in the sense of a logical (A or B or C) using a non-exclusive logical OR, and not in the sense of "at least one of A, at least one of B, and at least one of C."

[0091] In some embodiments, the controller is part of a system, such as may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (e.g., wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after semiconductor wafer or substrate processing. This electronics, sometimes referred to as a "controller," may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or type of system. Such processes may include process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer transfer to and from the tool, and wafer transfer to and from other transport tools and / or load locks connected or interfaced with the particular system.

[0092] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to implement one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0093] In some embodiments, the controller may be part of, coupled to, or a combination of a computer integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the “cloud” or all or part of a fab host computer system. This allows for remote access to wafer processing. The computer may provide remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, configure processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, for example, by having one or more individual controllers networked together and cooperating toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that are coupled to control the process on the chamber.

[0094] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0095] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas through the base plate, and a first cavity disposed in a first surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including a second cavity on a first surface of the upper ceramic layer; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region; a first plug disposed within the first cavity of the base plate; Equipped with the upper ceramic layer is disposed above the first plug and includes N gas feed holes with outlets disposed within the second cavity, where N is an integer greater than 20; The arc-resistant electrostatic chuck, wherein the inlets of the N gas supply holes are disposed in the buffer region.

2. 10. The arc-resistant electrostatic chuck of claim 1, The arc-resistant electrostatic chuck has N in the range of 300 to 1200.

3. 10. The arc-resistant electrostatic chuck of claim 1, The arc-resistant electrostatic chuck, wherein the N gas supply holes have diameters in the range of 3 μm to 30 μm.

4. 10. The arc-resistant electrostatic chuck of claim 1, The arc-resistant electrostatic chuck, wherein the N gas supply holes are laser drilled.

5. 10. The arc-resistant electrostatic chuck of claim 1, The arc-resistant electrostatic chuck, wherein the first plug comprises a porous plug.

6. 6. The arc-resistant electrostatic chuck of claim 5, The arc-resistant electrostatic chuck, wherein the porous plug has a porosity in the range of 30% to 50% and includes open pores.

7. 10. The arc-resistant electrostatic chuck of claim 1, The arc-resistant electrostatic chuck of claim 1, wherein the first plug comprises a multi-lumen plug including P gas supply holes oriented at a predetermined angle relative to the vertical, where P is an integer greater than 20.

8. 8. The arc-resistant electrostatic chuck of claim 7, The arc-resistant electrostatic chuck, wherein the predetermined angle ranges between 0.5° and 5°.

9. 8. The arc-resistant electrostatic chuck of claim 7, The arc-resistant electrostatic chuck, wherein P is in the range of more than 100 and less than 1000.

10. 10. The arc-resistant electrostatic chuck of claim 1, the arc-resistant electrostatic chuck further comprising a first multi-lumen plug including M gas supply holes and disposed in a third cavity on a second surface of the upper ceramic layer adjacent the bonding layer, wherein M is an integer greater than 20.

11. 10. The arc-resistant electrostatic chuck of claim 9, M is greater than 100, the arc-resistant electrostatic chuck.

12. 11. The arc-resistant electrostatic chuck of claim 10, The arc-resistant electrostatic chuck, wherein the diameter of the M gas supply holes is in the range of 3 μm to 10 μm.

13. 11. The arc-resistant electrostatic chuck of claim 10, the first multi-lumen plug further includes a solid core, and the M gas supply holes of the first multi-lumen plug extend vertically through the first plug radially outward from the solid core.

14. 14. The arc-resistant electrostatic chuck of claim 13, The arc-resistant electrostatic chuck, wherein the solid core has an outer diameter greater than a diameter along which the N gas supply holes are disposed.

15. 11. The arc-resistant electrostatic chuck of claim 10, The arc-resistant electrostatic chuck, wherein the first plug comprises a porous plug.

16. 16. The arc-resistant electrostatic chuck of claim 15, The arc-resistant electrostatic chuck, wherein the porous plug has a porosity in the range of 30% to 50% and includes open pores.

17. 11. The arc-resistant electrostatic chuck of claim 10, The arc-resistant electrostatic chuck, wherein the first plug includes a second multi-lumen plug including a plurality of gas supply holes oriented at an angle relative to the vertical.

18. 18. The arc-resistant electrostatic chuck of claim 17, The arc-resistant electrostatic chuck, wherein the predetermined angle ranges between 0.5° and 5°.

19. 11. The arc-resistant electrostatic chuck of claim 10, the first plug includes a second multi-lumen plug, the second multi-lumen plug including T gas supply holes vertically penetrating the second multi-lumen plug, where T is an integer greater than 20.

20. 20. The arc-resistant electrostatic chuck of claim 19, the second multi-lumen plug further includes a solid core, and the T gas supply holes are disposed radially outward of the solid core.

21. 11. The arc-resistant electrostatic chuck of claim 10, The arc-resistant electrostatic chuck, wherein the first plug comprises a solid plug with gas supply holes extending vertically therethrough.

22. 22. The arc-resistant electrostatic chuck of claim 21, The arc-resistant electrostatic chuck, wherein the gas supply holes have a diameter in the range of 100 to 500 μm.

23. 22. The arc-resistant electrostatic chuck of claim 21, The solid plug includes a body having a "T" shaped cross section and a flange extending outwardly from an upper surface of the body.

24. 10. The arc-resistant electrostatic chuck of claim 1, the second cavity in the upper ceramic layer includes a ridge and an annular plenum surrounding the ridge; and The arc-resistant electrostatic chuck, wherein outlets of the N gas supply holes are disposed on the raised portion.

25. 22. The arc-resistant electrostatic chuck of claim 21, the solid plug comprises a "T" shaped body including an annular gas channel extending from a bottom surface into the "T" shaped body, and P gas supply holes extending from the annular gas channel to a top surface of the "T" shaped body, where P is greater than 10.

26. 11. The arc-resistant electrostatic chuck of claim 10, the first plug includes a first plug portion having a "T" shaped cross-sectional contour, a cavity extending from a first surface, and a second plug portion having an inverted "T" shaped body inserted into the cavity; the second plug portion includes a gas supply hole extending vertically through the second plug portion; the first plug portion includes P gas supply holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10.

27. 27. The arc-resistant electrostatic chuck of claim 26, The arc-resistant electrostatic chuck, wherein the P gas supply holes have a diameter in the range of 20 to 150 μm.

28. 27. The arc-resistant electrostatic chuck of claim 26, the P gas supply holes are arranged in a circular pattern, and P is less than 500.

29. 27. The arc-resistant electrostatic chuck of claim 26, an arc-resistant electrostatic chuck, wherein a plenum is defined between a top surface of the second plug portion and the cavity of the first plug portion.

30. 11. The arc-resistant electrostatic chuck of claim 10, a bottom portion of the first multi-lumen plug extending vertically into the buffer region;

31. 10. The arc-resistant electrostatic chuck of claim 1, The first plug comprises: a body having a "T" shaped cross section; a plenum extending horizontally within the body; a gas channel extending from a bottom surface of the body to a location spaced from the plenum; P gas feed holes fluidly connecting the gas channel to the plenum; Q gas feed holes fluidly connecting the plenum to a top surface of the body; Including, 1. An arc-resistant electrostatic chuck, wherein P and Q are integers greater than 1.

32. 32. The arc-resistant electrostatic chuck of claim 31, the Q gas supply holes include 32 to 150 holes having diameters in the range of 30 μm to 80 μm; and The arc-resistant electrostatic chuck, wherein the P gas supply holes include 1 to 20 holes and have diameters in the range of 100 μm to 200 μm.

33. 32. The arc-resistant electrostatic chuck of claim 31, the lower portion of the first plug tapers inwardly away from the first cavity in the base plate.

34. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas; and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including: a second cavity disposed on a first side of the upper ceramic layer; an annular protrusion extending into the first cavity and defining a gas supply hole; a plenum disposed below the annular protrusion; and a third cavity disposed below the plenum; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region adjacent the first cavity; a first plug disposed within the first cavity of the base plate; a first multi-lumen plug disposed in the third cavity of the upper ceramic layer, the first multi-lumen plug including N gas supply holes, where N is greater than 20; An arc-resistant electrostatic chuck comprising:

35. 35. The arc-resistant electrostatic chuck of claim 34, The arc-resistant electrostatic chuck, wherein N is in the range of 100 to 900.

36. 35. The arc-resistant electrostatic chuck of claim 34, The arc-resistant electrostatic chuck, wherein the N gas supply holes have diameters in the range of 3 μm to 30 μm.

37. 35. The arc-resistant electrostatic chuck of claim 34, The arc-resistant electrostatic chuck, wherein the N gas supply holes are laser drilled.

38. 35. The arc-resistant electrostatic chuck of claim 34, The arc-resistant electrostatic chuck, wherein the first plug comprises a porous plug.

39. 39. The arc-resistant electrostatic chuck of claim 38, The arc-resistant electrostatic chuck, wherein the porous plug has a porosity in the range of 30% to 50% and includes open pores.

40. 35. The arc-resistant electrostatic chuck of claim 34, the first plug includes a second multi-lumen plug including P gas supply holes, where P is an integer greater than 20.

41. 41. The arc-resistant electrostatic chuck of claim 40, the second multi-lumen plug includes a solid core, and the P gas supply holes are disposed radially outward of the solid core.

42. 41. The arc-resistant electrostatic chuck of claim 40, The arc-resistant electrostatic chuck, wherein P is an integer ranging from 100 to less than 1000, and the diameters of the P gas supply holes are in the range of 3 μm to 10 μm.

43. 41. The arc-resistant electrostatic chuck of claim 40, the P gas supply holes of the second multi-lumen plug are oriented at a predetermined angle relative to a vertical direction.

44. 44. The arc-resistant electrostatic chuck of claim 43, The arc-resistant electrostatic chuck, wherein the predetermined angle ranges between 0.5° and 5°.

45. 35. The arc-resistant electrostatic chuck of claim 34, wherein the first multi-lumen plug includes a solid core, and the N gas feed holes are disposed radially outward of the solid core.

46. 46. ​​The arc-resistant electrostatic chuck of claim 45, The arc-resistant electrostatic chuck, wherein the solid core has an outer diameter greater than a first diameter of the gas feed holes.

47. 41. The arc-resistant electrostatic chuck of claim 40, The arc-resistant electrostatic chuck, wherein the first multi-lumen plug includes a solid core and the second multi-lumen plug includes a solid core.

48. 35. The arc-resistant electrostatic chuck of claim 34, The arc-resistant electrostatic chuck, wherein the first plug comprises a solid plug with gas supply holes extending vertically therethrough.

49. 49. The arc-resistant electrostatic chuck of claim 48, The arc-resistant electrostatic chuck wherein the solid plug has a "T" shaped cross section and includes a flange extending outwardly from a body of the solid plug.

50. 35. The arc-resistant electrostatic chuck of claim 34, The first plug comprises: a "T" shaped body including an annular gas channel extending from a bottom surface into said "T" shaped body; gas supply holes extending from the annular gas channel to a top surface of the "T" shaped body; An arc-resistant electrostatic chuck comprising:

51. 35. The arc-resistant electrostatic chuck of claim 34, the first plug includes a first plug portion having a "T"-shaped cross-sectional contour, a cavity extending within the first plug portion, and a second plug portion having a "T"-shaped body inserted into the cavity of the first plug portion; the second plug portion includes one or more gas feed holes vertically through the second plug portion; and the first plug portion includes one or more gas supply holes extending from the cavity to a top surface of the first plug portion.

52. 35. The arc-resistant electrostatic chuck of claim 34, a bottom portion of the first multi-lumen plug extending into the buffer region;

53. 35. The arc-resistant electrostatic chuck of claim 34, The first plug comprises: The main body and a plenum extending horizontally within the body; a gas channel extending from a bottom surface of the body to a location spaced from the plenum; P gas feed holes fluidly connecting the gas channel to the plenum; Q gas feed holes fluidly connecting the plenum to a top surface of the body; Including, 1. An arc-resistant electrostatic chuck, wherein P and Q are integers greater than 1.

54. 54. The arc-resistant electrostatic chuck of claim 53, the Q gas supply holes are disposed radially outward from a radially outer edge of the first multi-lumen plug.

55. 54. The arc-resistant electrostatic chuck of claim 53, The arc-resistant electrostatic chuck, wherein the Q gas supply holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm.

56. 54. The arc-resistant electrostatic chuck of claim 53, The arc-resistant electrostatic chuck, wherein the P gas supply holes include 1 to 20 holes having diameters in the range of 100 μm to 200 μm.

57. 54. The arc-resistant electrostatic chuck of claim 53, the lower portion of the first plug tapers radially inward away from the first cavity in the base plate.

58. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas; and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including a second cavity disposed on a first side of the upper ceramic layer and a gas feed hole fluidly connecting the second cavity to a bottom surface of the upper ceramic layer; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region disposed adjacent the first cavity; a multi-lumen plug disposed within the first cavity, the multi-lumen plug including a solid core and T gas supply holes disposed around the solid core, where T is greater than 20; An arc-resistant electrostatic chuck comprising:

59. 59. The arc-resistant electrostatic chuck of claim 58, The arc-resistant electrostatic chuck, wherein T is an integer ranging from 100 to less than 1000.

60. 59. The arc-resistant electrostatic chuck of claim 58, The arc-resistant electrostatic chuck, wherein the diameter of the T gas supply holes is in the range of 3 μm to 10 μm.

61. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas; and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including a second cavity disposed on a first side of the upper ceramic layer and a gas feed hole fluidly connecting the second cavity to a second surface of the upper ceramic layer; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region adjacent the first cavity; a plug disposed within the first cavity, the plug including: a body; a plenum extending horizontally within the body; a gas channel extending from a bottom surface of the body to a location spaced from the plenum; P gas feed holes fluidly connecting the gas channel to the plenum; and Q gas feed holes fluidly connecting the plenum to a top surface of the body, where P and Q are integers greater than 1; An arc-resistant electrostatic chuck comprising:

62. 62. The arc-resistant electrostatic chuck of claim 61, The arc-resistant electrostatic chuck, wherein the Q gas supply holes are disposed radially outward of the P gas supply holes.

63. 62. The arc-resistant electrostatic chuck of claim 61, The arc-resistant electrostatic chuck, wherein the Q gas supply holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm.

64. 62. The arc-resistant electrostatic chuck of claim 61, The arc-resistant electrostatic chuck, wherein the P gas supply holes include 1 to 20 holes and have diameters in the range of 100 μm to 200 μm.

65. 62. The arc-resistant electrostatic chuck of claim 61, the lower portion of the first plug tapers inwardly away from the first cavity in the base plate.

66. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas; and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including a second cavity disposed on a first side of the upper ceramic layer and a gas feed hole fluidly connecting the second cavity to a bottom surface of the upper ceramic layer; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region adjacent the first cavity; a first plug including a "T" shaped body, the first plug including an annular gas channel extending from a bottom surface into the "T" shaped body, and P gas feed holes extending from the annular gas channel to a top surface of the "T" shaped body, where P is an integer greater than 10; An arc-resistant electrostatic chuck comprising:

67. 67. The arc-resistant electrostatic chuck of claim 66, The arc-resistant electrostatic chuck, wherein P is an integer ranging from 10 to less than 1000.

68. 67. The arc-resistant electrostatic chuck of claim 66, The arc-resistant electrostatic chuck, wherein the P gas supply holes have a diameter in the range of 30 to 150 μm.

69. 1. An arc-resistant electrostatic chuck, comprising: a base plate including first gas supply holes for supplying a thermal transfer gas; and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes; an upper ceramic layer disposed above the base plate, the upper ceramic layer including a second cavity disposed on a first side of the upper ceramic layer and a gas feed hole fluidly connecting the second cavity to a bottom surface of the upper ceramic layer; a bonding layer configured to bond the base plate to the upper ceramic layer, the bonding layer including a buffer region adjacent the first cavity; a first plug including a first plug portion having a "T" shaped cross-sectional contour and a cavity extending upward from a bottom surface of the first plug portion, and a second plug portion having a "T" shaped body inserted into the cavity of the first plug portion; Equipped with the second plug portion includes one or more gas feed holes vertically through the second plug portion; and the first plug portion includes P gas supply holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10.

70. 70. The arc-resistant electrostatic chuck of claim 69, The arc-resistant electrostatic chuck, wherein P is an integer ranging from 10 to less than 1000.

71. 70. The arc-resistant electrostatic chuck of claim 69, The arc-resistant electrostatic chuck, wherein the P gas supply holes have diameters in the range of 30 μm to 150 μm.

72. 70. The arc-resistant electrostatic chuck of claim 69, The arc-resistant electrostatic chuck, wherein the first plug portion and the second plug portion are made of ceramic.

73. 1. An arc reducing plug for a thermal transfer gas hole in a base plate of an electrostatic chuck, comprising: a body having a "T" shaped cross section including a flange; an annular gas channel extending from a first surface of the body distal to the flange; P gas supply holes extending from the annular gas channel to a second surface of the body adjacent the flange; Including, P is an integer ranging from 10 to less than 1000; The arc reduction plug, wherein the P gas supply holes have a diameter in the range of 30 μm to 150 μm.

74. 74. The arc reducing plug of claim 73, wherein the body is made of ceramic.

75. 1. An arc reducing plug for a thermal transfer gas hole in a base plate of an electrostatic chuck, comprising: a first plug portion having a "T" shaped cross-sectional profile and a cavity extending upward from a first surface of the first plug portion; a second plug portion having a "T" shaped cross section that is inverted and inserted into the cavity of the first plug portion; Including, the second plug portion includes one or more gas feed holes vertically extending through the second plug portion; the first plug portion includes P gas supply holes extending from the cavity to a top surface of the first plug portion; An arc reducing plug, wherein P is an integer ranging from 10 to less than 1000.

76. 76. The arc reducing plug of claim 75, The arc reduction plug, wherein the P gas supply holes have a diameter in the range of 30 μm to 150 μm.

77. 76. The arc reducing plug of claim 75, The arc reducing plug, wherein the first plug portion and the second plug portion are made of ceramic.

78. 1. An arc reducing plug for a thermal transfer gas hole of an electrostatic chuck, comprising: The main body and a plenum extending horizontally within the body; a gas channel extending from a bottom surface of the body to a location spaced from the plenum; P gas feed holes fluidly connecting the gas channel to the plenum; Q gas feed holes fluidly connecting the plenum to a top surface of the body; Equipped with An arc reducing plug, wherein P and Q are integers greater than 1.

79. 79. The arc reducing plug of claim 78, The arc reduction plug, wherein the Q gas supply holes are disposed radially outward of the P gas supply holes.

80. 79. The arc reducing plug of claim 78, The arc reducing plug, wherein the Q gas supply holes include 32 to 150 holes having diameters ranging from 30 μm to 80 μm.

81. 79. The arc reducing plug of claim 78, The arc reduction plug, wherein the P gas supply holes include 1 to 20 holes and have diameters in the range of 100 μm to 200 μm.

82. 79. The arc reducing plug of claim 78, The arc reducing plug, wherein the lower portion of the first plug is inwardly tapered.

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