Fabrication of improved quantum dot color conversion layers and integration with micro-LED backplanes

Abstract

The pixels described herein include a color panel, a light-emitting diode (LED) panel, and an adhesive layer disposed between the color panel and the LED panel. The color panel includes a transparent layer, a plurality of sub-pixel isolation structures, and a plurality of black matrix structures disposed between the plurality of sub-pixel isolation structures and the transparent layer. The sub-pixel isolation structures define a plurality of color conversion wells for the plurality of subpixels. Color conversion material is disposed within the color conversion wells. The plurality of black matrix structures define a plurality of color resist wells for the plurality of subpixels. Color resist is disposed within the color resist wells. The LED panel includes a plurality of micro-LEDs disposed on a backplane. The plurality of micro-LEDs correspond to subpixels.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels. Specifically, the present disclosure relates to quantum dot conversion layers and manufacturing methods.

Background Art

[0002] Light-emitting diode (LED) panels use an array of LEDs, and individual LEDs provide pixel elements that can be individually controlled. Such LED panels can be used in computers, touch panel devices, PDAs (Personal Digital Assistants), mobile phones, television monitors, and the like.

[0003] LED panels using micron-scale LEDs (also called micro-LEDs) based on III-V semiconductor technology have various advantages such as being more energy-efficient, having higher brightness, and longer lifespan compared to OLEDs, and being easily manufactured due to fewer material layers in the display stack. However, there are challenges in manufacturing micro-LED panels. For example, the color purity of quantum dot (QD) color conversion materials is not ideal for the broadband spectral emission of LEDs. In addition, polarizers integrated with QDs may reduce the red / green / blue (RGB) transmission brightness. These factors may degrade the quality of the display.

[0004] Therefore, what is needed in the art is a more efficient QD color conversion layer.

Summary of the Invention

[0005] In one embodiment, a pixel is disclosed. The pixel includes a color panel, a light-emitting diode (LED) panel, and an adhesive material disposed between the color panel and the LED panel. The color panel includes a transparent layer, a plurality of sub-pixel isolation structures, and a plurality of black matrix structures disposed between the plurality of sub-pixel isolation structures and the transparent layer. The plurality of sub-pixel isolation structures define a plurality of color conversion wells for the plurality of subpixels. The plurality of color conversion wells include a first color conversion well for a first subpixel, a second color conversion well for a second subpixel, and a third color conversion well for a third subpixel. A first color conversion material is disposed in the first color conversion well. A second color conversion material is disposed in the second color conversion well. A third color conversion material is disposed in the third color conversion well. The plurality of black matrix structures define a plurality of color resist wells for the plurality of subpixels. The plurality of color resist wells include a first color resist well for a first subpixel, a second color resist well for a second subpixel, and a third color resist well for a third subpixel. The light-emitting diode (LED) panel includes multiple micro-LEDs arranged on a backplane. The first micro-LED corresponds to the first subpixel. The second micro-LED corresponds to the second subpixel. The third micro-LED corresponds to the third subpixel.

[0006] In another embodiment, a pixel is disclosed. The pixel includes a color panel and a light-emitting diode (LED) panel. The color panel includes a color resist transparent layer, a color conversion transparent layer, a plurality of sub-pixel isolation structures, a first adhesive material disposed between the color conversion transparent layer and the color resist transparent layer, and a plurality of black matrix structures disposed between the transparent layer and the sub-pixel isolation structures. The plurality of sub-pixel isolation structures define a plurality of color conversion wells for the plurality of subpixels. The plurality of color conversion wells include a first color conversion well for a first subpixel, a second color conversion well for a second subpixel, and a third color conversion well for a third subpixel. A first color conversion material is disposed in the first color conversion well. A second color conversion material is disposed in the second color conversion well. A third color conversion material is disposed in the third color conversion well. The plurality of black matrix structures define a plurality of color resist wells for the plurality of subpixels. The multiple color resist wells include a first color resist well for a first subpixel, a second color resist well for a second subpixel, and a third color resist well for a third subpixel. The light-emitting diode (LED) panel includes multiple microLEDs arranged on a backplane. The first microLED of the multiple microLEDs corresponds to a first subpixel, the second microLED of the multiple microLEDs corresponds to a second subpixel, and the third microLED of the multiple microLEDs corresponds to a third subpixel. A second adhesive material is placed between the LED panel and the color panel.

[0007] In yet another embodiment, a method for fabricating a microLED device is disclosed. This method includes the steps of: patterning a plurality of black matrix structures on a transparent layer; placing a color resist in a plurality of color resist wells defined by the black matrix structures; placing a separation structure layer on the black matrix structures and the plurality of color resist wells; patterning the separation structure layer to form a plurality of subpixel separation structures; placing a color conversion material in a plurality of color conversion wells to form a color panel, wherein the plurality of color conversion wells are defined by a plurality of subpixel separation structures; and bonding the color panel to a light-emitting diode (LED) panel, wherein the LED panel comprises a plurality of microLEDs arranged on a backplane.

[0008] To allow for a more detailed understanding of the above-mentioned features of this disclosure, a more specific description of this disclosure, as summarized above, can be given by referring in part to embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered limiting in scope, as other equally valid embodiments may be recognized. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic cross-sectional view of a pixel having a first arrangement according to an embodiment. [Figure 2] This is a flowchart of a first method for forming pixels having a first arrangement according to an embodiment. [Figure 3A] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3B] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3C] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3D]This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3E] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3F] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3G] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3H] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3I] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3J] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3K] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3L] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 3M] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a first arrangement according to an embodiment. [Figure 4] This is a flowchart of a second method for forming pixels having a first arrangement, according to an embodiment. [Figure 5A] This is a schematic cross-sectional view of a pixel during the process of Method 400 according to an embodiment. [Figure 5B] This is a schematic cross-sectional view of a pixel during the method 400 according to the embodiment. [Figure 5C] This is a schematic cross-sectional view of a pixel during the process of Method 400 according to an embodiment. [Figure 5D] This is a schematic cross-sectional view of a pixel during the process of Method 400 according to an embodiment. [Figure 5E] This is a schematic cross-sectional view of a pixel during the process of Method 400 according to an embodiment. [Figure 5F] It is a schematic cross-sectional view of the middle pixel of the method 400 according to an embodiment. [Figure 5G] It is a schematic cross-sectional view of the middle pixel of the method 400 according to an embodiment. [Figure 5H] It is a schematic cross-sectional view of the middle pixel of the method 400 according to an embodiment. [Figure 6A] It is a schematic cross-sectional view of a pixel having a second arrangement according to an embodiment. [Figure 6B] It is a schematic cross-sectional view of a pixel having a third arrangement according to an embodiment. [Figure 7] It is a flowchart of a first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8A] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8B] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8C] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8D] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8E] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8F] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8G] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8H] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8I] It is a schematic cross-sectional view of the middle pixel of the first method for forming a pixel having a second arrangement according to an embodiment. [Figure 8J]This is a schematic cross-sectional view of a pixel during a first method for forming a pixel having a second arrangement, according to an embodiment. [Figure 8K] This is a schematic cross-sectional view of a pixel during a first method for forming a pixel having a second arrangement, according to an embodiment. [Figure 8L] This is a schematic cross-sectional view of a pixel during a first method for forming a pixel having a second arrangement, according to an embodiment. [Figure 8M] This is a schematic cross-sectional view of a pixel during a first method for forming a pixel having a second arrangement, according to an embodiment. [Figure 8N] This is a schematic cross-sectional view of a pixel during a first method for forming a pixel having a second arrangement, according to an embodiment. [Figure 9] This is a flowchart of a second method for forming pixels having a second arrangement, according to an embodiment. [Figure 10A] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10B] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10C] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10D] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10E] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10F] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10G] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10H] This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 10I]This is a schematic cross-sectional view of a pixel during a second method for forming a pixel having a second arrangement, according to an embodiment. [Figure 11A] This is a schematic cross-sectional view of a pixel having a fourth arrangement according to an embodiment. [Figure 11B] This is a schematic cross-sectional view of a pixel having a fifth arrangement according to an embodiment. [Figure 12] This is a flowchart of a method for forming pixels having a fourth arrangement according to an embodiment. [Figure 13A] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13B] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13C] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13D] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13E] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13F] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Figure 13G] This is a schematic cross-sectional view of a pixel during a method for forming a pixel having a fourth arrangement according to an embodiment. [Modes for carrying out the invention]

[0010] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings, where possible. Elements and features of one embodiment are intended to be usefully incorporated into other embodiments without further detail.

[0011] Embodiments of this disclosure generally relate to LED pixels and methods for manufacturing LED pixels. More specifically, this disclosure relates to quantum dot conversion layers and methods for manufacturing them.

[0012] Figure 1 shows a schematic cross-sectional view of a pixel 100 having a first arrangement 101. The pixel 100 includes an LED panel 103 and a color panel 105. The LED panel 103 includes a plurality of micro-LEDs 104 arranged on a backplane 102. The micro-LEDs 104 are integrated with the backplane circuit so that each micro-LED 104 can be addressed individually. For example, the circuit of the backplane 102 can drive the micro-LEDs 104 by including a TFT active matrix array with thin-film transistors and storage capacitors for each micro-LED 104, column address lines and row address lines, and column drivers and row drivers. Alternatively, the micro-LEDs 104 can be driven by a passive matrix in the backplane circuit. The backplane 102 can be manufactured using a conventional CMOS process.

[0013] The adhesive material 106 may be placed between the LED panel 103 and the color panel 105. The adhesive material 106 may also be placed between the micro-LEDs 104. The adhesive material 106 adheres the LED panel 103 to the color panel 105. The adhesive material 106 is placed on top of the micro-LEDs 104, and in some embodiments, it is placed directly on the micro-LEDs 104. The adhesive material 106 includes epoxy, acrylic, or urethane transparent adhesives, or combinations thereof.

[0014] The color panel 105 includes a transparent layer 107, a plurality of subpixel isolation (SI) structures 110, a capping layer 120, and a plurality of black matrix structures 109. The capping layer is made of indium tin oxide (ITO), silicon oxide (SiO2), and silicon nitride (SiN xThis may include ), silicon oxynitride (SiON), aluminum oxide (Al2O3), hafnium oxide (HfO2), tantalum oxide (Ta2O5), or a combination thereof. Adjacent subpixel separation structures 110 define the respective color conversion wells 113 of a plurality of subpixels 112. The color conversion material is placed in the color conversion wells 113. The color conversion material includes cadmium material, zinc material, or indium phosphide material, or a combination thereof. A first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, a second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and a third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C. In some embodiments, the first subpixel 112A is a red subpixel, and the first color conversion material 113A is a red color conversion material. In some embodiments, the second subpixel 112B is a green subpixel, and the second color conversion material 113B is a green color conversion material. In some embodiments, the third subpixel 112C is a blue subpixel, and the third color conversion material 113C is a blue color conversion material.

[0015] When the micro-LED 104A of a red subpixel (e.g., a first subpixel 112A) is turned on, the red conversion material (e.g., a first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of a green subpixel (e.g., a second subpixel 112B) is turned on, the green conversion material (e.g., a second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of a blue subpixel (e.g., a third subpixel 112C) is turned on, the blue conversion material (e.g., a third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 100 includes a fourth subpixel. In some embodiments, the fourth subpixel does not contain color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth subpixel includes sacrificial material. In other embodiments, at least three subpixels 112 contain the same color conversion material. A fourth subpixel may be filled with the color conversion material later.

[0016] The subpixel separation structure 110 includes a photoresist material such as an epoxy resist. The photoresist material may be a negative-type photoresist. The photoresist may have a black polymer structure, and the black polymer is opaque to UV and visible light (for example, the black polymer has a high optical density or a white (e.g., light-reflective) polymer structure). The width 130 of the subpixel separation structure 110 may be about 2 μm to about 20 μm. The pitch 140 of the subpixel separation structure 110 may be about 10 μm to about 200 μm. The height 150 of the subpixel separation structure 110 may be about 2 μm to about 30 μm, for example, 5 μm to 15 μm. A coating material 118 is placed on the side walls and top surface of the subpixel separation structure 110. The coating material 118 on the subpixel separation structure 110 can parallelize the light to the display by reflecting the emitted light and encapsulating the converted light in each subpixel. In some embodiments, the coating material 118 is a metal layer. The metal layer includes, but is not limited to, aluminum, silver, or combinations thereof. In some embodiments, the coating material 118 may include a metal layer and a dielectric layer. The dielectric layer may be silicon nitride (SiN x The materials may include: The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is 100 nm to about 500 nm. In some embodiments, the coating layer may be an absorbent material. In yet other embodiments, the sub-pixel separation structure 110 may incorporate reflective properties.

[0017] The black matrix structure 109 defines the color resist wells 115 for each of the multiple subpixels 112. A first color resist 115A is placed in the well 115 for the first subpixel 112A, a second color resist 115B is placed in the well 115 for the second subpixel 112B, and a third color resist 115C is placed in the well 115 for the third subpixel 112C. In some embodiments, the first color resist 115A is a red color resist, the second color resist 115B is a green color resist, and the third color resist 115C is a blue color resist. The color resists are patterned with UV light. The color resists can function as color filters to improve display color quality.

[0018] The black matrix structure 109 comprises a black matrix material or a black resist material. The width 135 of the black matrix structure 109 may be approximately 2 μm to approximately 20 μm. The pitch 145 of the black matrix structure 109 may be approximately 2 μm to approximately 6 μm. The height 155 of the black matrix structure 109 may be approximately 1 μm to approximately 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 100. The black matrix structure 109 can reduce the thickness of the pixel 100. Furthermore, the black matrix structure 109 reduces reflection of the pixel 100 and improves the brightness of the pixel 100.

[0019] The capping layer 120 is positioned between the black matrix structure 109 and the sub-pixel separation structure 110. The capping layer 120 is positioned on top of the sub-pixel separation structure 110 and the color resist well 115. The capping layer 120 separates the color conversion well 113 from the color resist well 115. By separating the color conversion well 113 from the color resist well 115, the capping layer prevents harmful reactions between the color resist well 115 and the color conversion well 113 in the event that the color resist well 115 and the color conversion well 113 are incompatible. The thickness of the capping layer 120 is approximately 100 nm to 1 μm.

[0020] The transparent layer 107 is positioned on top of the black matrix structure 109 and the color resist wells 115. The transparent layer 107 includes glass material, polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 100 by the first arrangement 101 improves the color gamut, contrast, and uniformity of the pixel 100, while reducing or eliminating crosstalk from above.

[0021] Figure 2 shows a flowchart of the first method 200 for forming a pixel 100 having a first arrangement 101. Figures 3A to 3M show schematic cross-sectional views of the pixel 100 during the first method 200 for forming the pixel 100 having a first arrangement 101.

[0022] In operation 201, as shown in Figure 3A, multiple black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 may be patterned by a lithography process. The black matrix structures 109 define multiple color resist wells 115 of subpixels 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C.

[0023] In operation 202, as shown in Figure 3B, the first color resist material layer 215A is placed in a plurality of color resist wells 115. The first color resist material layer 215A is placed in a plurality of color resist wells 115 of a subpixel 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C. The first color resist material layer 215A may also be placed in the plurality of color resist wells 115 by a spin coating process.

[0024] In operation 203, as shown in Figure 3C, the first color resist material layer 215A is patterned to form the first color resist 115A within the color resist well 115 of the first subpixel 112A. The first color resist material layer 215A is patterned using a capillary force (CF) lithography process. The CF lithography process removes the first color resist material layer 215A from the color resist well 115 of the second subpixel 112B and the color resist well 115 of the third subpixel 112C.

[0025] In operation 204, as shown in Figure 3D, the second color resist material layer 215B is placed in a plurality of color resist wells 115. The second color resist material layer 215B is placed in a plurality of color resist wells 115, for example, in the color resist well 115 of the second subpixel 112B and the color resist well 115 of the third subpixel 112C. In some embodiments, since the first color resist 115A is placed in the color resist well 115 of the first subpixel 112A, the second color resist material layer 215B is not placed in the color resist well 115 of the first subpixel 112A. The second color resist material layer 215B may be placed in the plurality of color resist wells 115 by a spin coating process.

[0026] In operation 205, as shown in Figure 3E, the second color resist material layer 215B is patterned to form the second color resist 115B within the color resist well 115 of the second subpixel 112B. The second color resist material layer 215B is patterned using a capillary force (CF) lithography process. The CF lithography process removes the second color resist material layer 215B from the color resist well 115 of the third subpixel 112C.

[0027] In operation 206, as shown in Figure 3F, the third color resist material layer 215C is placed in a plurality of color resist wells 115. The third color resist material layer 215C is placed in a plurality of color resist wells 115, for example, in the color resist well 115 of the third subpixel 112C. In some embodiments, the third color resist material layer 215C is not placed in the color resist well 115 of the first subpixel 112A or the color resist well 115 of the second subpixel 112B, because the first color resist 115A is placed in the color resist well 115 of the first subpixel 112A and the second color resist 115B is placed in the color resist well 115 of the second subpixel 112B. The third color resist material layer 215C may be placed in a plurality of color resist wells 115 by a spin coating process.

[0028] In operation 207, as shown in Figure 3G, the third color resist material layer 215C is patterned to form the third color resist 115C within the color resist well 115 of the third subpixel 112C. The third color resist material layer 215C is patterned using a capillary force (CF) lithography process.

[0029] In operation 208, as shown in Figure 3H, the capping layer is placed on top of the black matrix structure 109 and the color resists (e.g., the first color resist 115A, the second color resist 115B, and the third color resist 115C). The capping layer 120 is placed on top of the black matrix structure 109 and the color resists using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or another deposition process.

[0030] In operation 209, the subpixel separation structure layer 310 is placed on top of the capping layer 120, as shown in Figure 3I. The subpixel separation structure layer 310 is placed using a spin coating process.

[0031] In operation 210, as shown in Figure 3J, the subpixel separation structure layer 310 is patterned to form multiple subpixel separation structures 110. The subpixel separation structures 110 define multiple color conversion wells 113.

[0032] In operation 211, as shown in Figure 3K, the coating material 118 is placed on the subpixel isolation structure 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer can be deposited using a physical vapor deposition (PVD) process. The dielectric layer can be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top and sidewalls of the subpixel isolation structure 110.

[0033] In operation 212, as shown in Figure 3L, the color conversion materials are placed in the color conversion wells 113 to form the color panel 105. The first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, the second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and the third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C.

[0034] In operation 213, as shown in Figure 3M, the color panel 105 is bonded to the LED panel 103. Adhesive material 106 bonds the color panel 105 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro-LEDs 104 arranged on the backplane 102. The plurality of micro-LEDs 104 may include a first micro-LED 104A corresponding to a first subpixel 112A, a second micro-LED 104B corresponding to a second subpixel 112B, and a third micro-LED 104C corresponding to a third subpixel 112C.

[0035] Figure 4 shows a flowchart of the second method 300 for forming a pixel 100 having a first arrangement 101. Figures 5A to 5H show schematic cross-sectional views of the pixel 100 during the second method 300 for forming the pixel 100 having the first arrangement 101.

[0036] In operation 401, as shown in Figure 5A, multiple black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 may be patterned by a lithography process. The black matrix structures 109 define multiple color resist wells 115 of subpixels 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C.

[0037] In operation 402, as shown in Figure 5B, the color resist is placed in multiple color resist wells 115. The first color resist 115A is placed in the color resist well 115 of the first subpixel 112A, the second color resist 115B is placed in the color resist well 115 of the second subpixel 112B, and the third color resist 115C is placed in the color resist well 115 of the third subpixel 112C. The color resist is placed in the multiple color resist wells 115 using an inkjet printing process.

[0038] In operation 403, as shown in Figure 5C, the capping layer is placed on top of the black matrix structure 109 and the color resists (e.g., the first color resist 115A, the second color resist 115B, and the third color resist 115C). The capping layer 120 is placed on top of the black matrix structure 109 and the color resists using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or another deposition process.

[0039] In operation 404, the subpixel isolation structure layer 310 is placed on top of the capping layer 120, as shown in Figure 5D. The subpixel isolation structure layer 310 is placed using a spin coating process.

[0040] In operation 405, as shown in Figure 5E, the subpixel separation structure layer 310 is patterned to form multiple subpixel separation structures 110. The subpixel separation structures 110 define multiple color conversion wells 113.

[0041] In operation 406 shown in Figure 5F, the coating material 118 is placed on the subpixel isolation structure 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer can be deposited using a physical vapor deposition (PVD) process. The dielectric layer can be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top and sidewalls of the subpixel isolation structure 110.

[0042] In operation 407, as shown in Figure 5G, the color conversion materials are placed in the color conversion wells 113 to form the color panel 105. The first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, the second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and the third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C.

[0043] In operation 408, as shown in Figure 5H, the color panel 105 is bonded to the LED panel 103. Adhesive material 106 bonds the color panel 105 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro-LEDs 104 arranged on the backplane 102. The plurality of micro-LEDs 104 may include a first micro-LED 104A corresponding to a first subpixel 112A, a second micro-LED 104B corresponding to a second subpixel 112B, and a third micro-LED 104C corresponding to a third subpixel 112C.

[0044] Figure 6A shows a schematic cross-sectional view of a pixel 600 having a second arrangement 600A. Figure 6B shows a schematic cross-sectional view of a pixel 600 having a third arrangement 600B.

[0045] Pixel 600 includes an LED panel 103 and a color panel 605. The LED panel includes a plurality of micro-LEDs 104 arranged on a backplane 102. The micro-LEDs 104 are integrated with the backplane circuit so that each micro-LED 104 can be addressed individually. For example, the circuit of the backplane 102 can drive the micro-LEDs 104 by including a TFT active matrix array with thin-film transistors and storage capacitors for each micro-LED 104, column address lines and row address lines, and column and row drivers. Alternatively, the micro-LEDs 104 can be driven by a passive matrix in the backplane circuit. The backplane 102 can be manufactured using a conventional CMOS process.

[0046] The adhesive material 106 may be placed between the LED panel 103 and the color panel 605. The adhesive material 106 may also be placed between the micro-LEDs 104. The adhesive material 106 adheres the LED panel 103 to the color panel 105. The adhesive material 106 is placed on top of the micro-LEDs 104, and in some embodiments, it is placed directly on the micro-LEDs 104. The adhesive material 106 includes epoxy, acrylic, or urethane transparent adhesives, or combinations thereof.

[0047] The color panel 605 includes a transparent layer 107, a plurality of subpixel isolation (SI) structures 110, a capping layer, an ultraviolet (UV) blocking layer 624, and a plurality of black matrix structures 109. Adjacent subpixel isolation structures 110 define the respective color conversion wells 113 of a plurality of subpixels 112. A color conversion material is placed in the color conversion wells 113. The color conversion material includes a cadmium material, a zinc material, or an indium phosphide material, or a combination thereof. A first color conversion material 113A is placed in the color conversion well 113 of a first subpixel 112A, a second color conversion material 113B is placed in the color conversion well 113 of a second subpixel 112B, and a third subpixel 112C having a third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C. In some embodiments, the first subpixel 112A is a red subpixel, and the first color conversion material 113A is a red color conversion material. In some embodiments, the second subpixel 112B is a green subpixel, and the second color conversion material 113B is a green color conversion material. In some embodiments, the third subpixel 112C is a blue subpixel, and the third color conversion material 113C is a blue color conversion material.

[0048] When the micro-LED 104A of the first subpixel 112A is turned on, the red conversion material (e.g., the first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of the second subpixel 112B is turned on, the green conversion material (e.g., the second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of the blue subpixel (e.g., the third subpixel 112C) is turned on, the blue conversion material (e.g., the third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 600 includes a fourth subpixel. In some embodiments, the fourth subpixel does not contain color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth subpixel includes sacrificial material. In other embodiments, at least three subpixels 112 contain the same color conversion material. The fourth subpixel may later be filled with a color conversion material.

[0049] The subpixel separation structure 110 includes a photoresist material such as an epoxy resist. The photoresist material may be a negative-type photoresist. The photoresist may have a black polymer structure, and the black polymer is opaque to UV and visible light (for example, the black polymer has a high optical density or a white (e.g., light-reflective) polymer structure). The width 130 of the subpixel separation structure 110 may be about 2 μm to about 20 μm. The pitch 140 of the subpixel separation structure 110 may be about 10 μm to about 200 μm. The height 150 of the subpixel separation structure 110 may be about 2 μm to about 30 μm, for example, 5 μm to 15 μm. A coating material 118 is placed on the side walls and top surface of the subpixel separation structure 110. The coating material 118 on the subpixel separation structure 110 reflects the emitted light, confines the converted light to each subpixel, and directs the light to the display parallel. In some embodiments, the coating material 118 is a metal layer. The metal layer includes, but is not limited to, aluminum, silver, or combinations thereof. In some embodiments, the coating material 118 may include a metal layer and a dielectric layer. The dielectric layer may be silicon nitride (SiN x The materials may include: The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is 100 nm to about 500 nm. In some embodiments, the coating layer may be an absorbent material. In yet other embodiments, the sub-pixel separation structure 110 may incorporate reflective properties.

[0050] The black matrix structure 109 defines the color resist wells 115 for each of the multiple subpixels 112. A first color resist 115A is placed in the well 115 for the first subpixel 112A, a second color resist 115B is placed in the well 115 for the second subpixel 112B, and a third color resist 115C is placed in the well 115 for the third subpixel 112C. In some embodiments, the first color resist 115A is a red color resist, the second color resist 115B is a green color resist, and the third color resist 115C is a blue color resist. The color resists are patterned with UV light. The color resists can function as color filters to improve display color quality.

[0051] The black matrix structure 109 comprises a black matrix material or a black resist material. The width 135 of the black matrix structure 109 is approximately 2 μm to approximately 20 μm. The pitch 145 of the black matrix structure 109 is approximately 10 μm to approximately 200 μm. The height 155 of the black matrix structure 109 may be approximately 1 μm to approximately 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 600. The black matrix structure 109 can reduce the thickness of the pixel 600. Furthermore, the black matrix structure 109 reduces reflection in the pixel 600 and improves the brightness of the pixel 600.

[0052] In one embodiment, as shown in Figure 6A, the capping layer 120 and the UV blocking layer 624 are placed between the black matrix structure 109 and the subpixel separation structure 110. The UV blocking layer 624 is placed on top of the subpixel separation structure 110. The capping layer 120 is placed on top of the UV blocking layer 624. The black matrix structure 109 is placed on top of the capping layer 120.

[0053] In another embodiment, as shown in Figure 6B, the capping layer 120 is placed between the black matrix structure 109 and the subpixel separation structure 110. The capping layer 120 is placed on top of the subpixel separation structure 110. The UV blocking layer 624 is placed between the black matrix structure 109 and the transparent layer 107. The UV blocking layer 624 is placed on top of the black matrix structure 109.

[0054] The capping layer 120 is placed on top of the subpixel separation structure 110 and the color resist well 115. The capping layer 120 separates the color conversion well 113 from the color resist well 115. The thickness of the capping layer 120 is approximately 100 nm to 1 μm. The thickness of the UV blocking layer 624 is approximately 100 nm to 1 μm.

[0055] The transparent layer 107 is positioned on top of the black matrix structure 109 and the color resist wells 115. The transparent layer 107 includes glass material, polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 600 with the second arrangement 601A and the third arrangement 601B improves the color gamut, contrast, and uniformity of the pixel 600, while reducing or eliminating crosstalk from above.

[0056] Figure 7 shows a flowchart of the first method 700 for forming a pixel 600 having a second arrangement 601A. Figures 8A to 8N show schematic cross-sectional views of the pixel 600 during the first method 700 for forming a pixel 600 having a second arrangement 600A.

[0057] In operation 701, as shown in Figure 8A, a plurality of black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 may be patterned by a lithography process. The black matrix structures 109 define a plurality of color resist wells 115 of a subpixel 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C.

[0058] In operation 702, as shown in Figure 8B, the first color resist material layer 215A is placed in a plurality of color resist wells 115. The first color resist material layer 215A is placed in a plurality of color resist wells 115, for example, the color resist well 115 for the first subpixel 112A, the color resist well 115 for the second subpixel 112B, and the color resist well 115 for the third subpixel 112C. The first color resist material layer 215A may be placed in the plurality of color resist wells 115 by a spin coating process.

[0059] In operation 703, as shown in Figure 8C, the first color resist material layer 215A is patterned to form the first color resist 115A in the color resist well 115 of the first subpixel 112A. The first color resist material layer 215A is patterned using a capillary force (CF) lithography process. The CF lithography process removes the first color resist material layer 215A from the color resist well 115 of the second subpixel 112B and the color resist well 115 of the third subpixel 112C.

[0060] In operation 704, as shown in Figure 8D, the second color resist material layer 215B is placed in a plurality of color resist wells 115. The second color resist material layer 215B is placed in a plurality of color resist wells 115, for example, in the color resist well 115 of the second subpixel 112B and the color resist well 115 of the third subpixel 112C. In some embodiments, since the first color resist 115A is placed in the color resist well 115 of the first subpixel 112A, the second color resist material layer 215B is not placed in the color resist well 115 of the first subpixel 112A. The second color resist material layer 215B may be placed in the plurality of color resist wells 115 by a spin coating process.

[0061] In operation 705, as shown in Figure 8E, the second color resist material layer 215B is patterned to form the second color resist 115B within the color resist well 115 of the second subpixel 112B. The second color resist material layer 215B is patterned using a capillary force (CF) lithography process. The CF lithography process removes the second color resist material layer 215B from the color resist well 115 of the third subpixel 112C.

[0062] In operation 706, as shown in Figure 8F, the third color resist material layer 215C is placed in a plurality of color resist wells 115. The third color resist material layer 215C is placed in a plurality of color resist wells 115, for example, in the color resist well 115 of the third subpixel 112C. In some embodiments, the third color resist material layer 215C is not placed in the color resist well 115 of the first subpixel 112A or the color resist well 115 of the second subpixel 112B, since the first color resist 115A is placed in the color resist well 115 of the first subpixel 112A and the second color resist 115B is placed in the color resist well 115 of the second subpixel 112B. The third color resist material layer 215C may be placed in a plurality of color resist wells 115 by a spin coating process.

[0063] In operation 707, as shown in Figure 8G, the third color resist material layer 215C is patterned to form the third color resist 115C within the color resist well 115 of the third subpixel 112C. The third color resist material layer 215C is patterned using a capillary force (CF) lithography process.

[0064] In operation 708, as shown in Figure 8H, the capping layer is placed on top of the black matrix structure 109 and the color resists (e.g., the first color resist 115A, the second color resist 115B, and the third color resist 115C). The capping layer 120 is placed on top of the black matrix structure 109 and the color resists using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or another deposition process.

[0065] In operation 709, the ultraviolet (UV) blocking layer 624 is placed on top of the capping layer 120, as shown in Figure 8I. The UV blocking layer is placed using a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process.

[0066] In operation 710, as shown in Figure 8J, the subpixel separation structure layer 310 is placed on top of the capping layer 120. The subpixel separation structure layer 310 is placed using a spin coating process.

[0067] In operation 711, as shown in Figure 8K, the subpixel separation structure layer 310 is patterned to form a plurality of subpixel separation structures 110 and a plurality of color conversion wells 113. The subpixel separation structures 110 define the plurality of color conversion wells 113.

[0068] In operation 712, as shown in Figure 8L, the coating material 118 is placed on the subpixel isolation structure 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer can be deposited using a physical vapor deposition (PVD) process. The dielectric layer can be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top and side walls of the subpixel isolation structure 110.

[0069] In operation 713, as shown in Figure 8M, the color conversion materials are placed in the color conversion wells 113 to form the color panel 605. The first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, the second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and the third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C.

[0070] In operation 714, as shown in Figure 8N, the color panel 605 is bonded to the LED panel 103. The adhesive material 106 bonds the color panel 605 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro-LEDs 104 arranged on the backplane 102. The plurality of micro-LEDs 104 may include a first micro-LED 104A corresponding to a first subpixel 112A, a second micro-LED 104B corresponding to a second subpixel 112B, and a third micro-LED 104C corresponding to a third subpixel 112C.

[0071] Figure 9 shows a flowchart of the second method 900 for forming a pixel 600 having a second arrangement 601A. Figures 10A to 10I show schematic cross-sectional views of the pixel 600 during the second method 900 for forming a pixel 600 having a second arrangement 601A.

[0072] In operation 901, as shown in Figure 10A, a plurality of black matrix structures 109 are patterned on the transparent layer 107. The black matrix structures 109 may be patterned by a lithography process. The black matrix structures 109 define a plurality of color resist wells 115 of a subpixel 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C.

[0073] In operation 902, as shown in Figure 10B, color resists are placed in multiple color resist wells 115. The first color resist 115A is placed in the color resist well 115 of the first subpixel 112A, the second color resist 115B is placed in the color resist well 115 of the second subpixel 112B, and the third color resist 115C is placed in the color resist well 115 of the third subpixel 112C. The color resists are placed using an inkjet printing process.

[0074] In operation 903, as shown in Figure 10C, the capping layer is placed on top of the black matrix structure 109 and the color resists (e.g., the first color resist 115A, the second color resist 115B, and the third color resist 115C). The capping layer 120 is placed on top of the black matrix structure 109 and the color resists using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or another deposition process.

[0075] In operation 904, the ultraviolet (UV) blocking layer 624 is placed on top of the capping layer 120, as shown in Figure 10D. The UV blocking layer is placed using a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process.

[0076] In operation 905, the subpixel isolation structure layer 310 is placed on top of the capping layer 120, as shown in Figure 10E. The subpixel isolation structure layer 310 is placed using a spin coating process.

[0077] In operation 906, as shown in Figure 10F, the subpixel separation structure layer 310 is patterned to form multiple subpixel separation structures 110. The subpixel separation structures 110 define multiple color conversion wells 113.

[0078] In operation 907 as shown in Figure 10G, the coating material 118 is placed on the subpixel isolation structure 110. The coating material 118 may include a metal layer and a dielectric layer. The metal layer can be deposited using a physical vapor deposition (PVD) process. The dielectric layer can be deposited using a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process. The coating material 118 covers the top and sidewalls of the subpixel isolation structure 110.

[0079] In operation 908, as shown in Figure 10H, the color conversion materials are placed in the color conversion wells 113 to form the color panel 605. The first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, the second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and the third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C.

[0080] In operation 909, as shown in Figure 10I, the color panel 605 is bonded to the LED panel 103. Adhesive material 106 bonds the color panel 605 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro-LEDs 104 arranged on the backplane 102. The plurality of micro-LEDs 104 may include a first micro-LED 104A corresponding to a first subpixel 112A, a second micro-LED 104B corresponding to a second subpixel 112B, and a third micro-LED 104C corresponding to a third subpixel 112C.

[0081] Figure 11A shows a schematic cross-sectional view of a pixel 1100 having a fourth arrangement 1101A. Figure 11B shows a schematic cross-sectional view of a pixel 1100 having a fifth arrangement 1101B.

[0082] Pixel 1100 includes an LED panel 103 and a color panel 1105. The LED panel includes a plurality of micro-LEDs 104 arranged on a backplane 102. The micro-LEDs 104 are integrated with the backplane circuit so that each micro-LED 104 can be addressed individually. For example, the circuit of the backplane 102 can drive the micro-LEDs 104 by including a TFT active matrix array with thin-film transistors and storage capacitors for each micro-LED 104, column address lines and row address lines, and column drivers and row drivers. Alternatively, the micro-LEDs 104 can be driven by a passive matrix in the backplane circuit. The backplane 102 can be manufactured using a conventional CMOS process.

[0083] The second adhesive material 1106B may be placed between the LED panel 103 and the color panel 1105. The second adhesive material 1106B may also be placed between the micro-LEDs 104. The second adhesive material 1106B is placed on top of the micro-LEDs 104, and in some embodiments, it is placed directly on the micro-LEDs 104. The second adhesive material 1106B adheres the LED panel 103 to the color panel 1105. The second adhesive material 1106B includes an epoxy-based, acrylic-based, or urethane-based transparent adhesive, or a combination thereof.

[0084] The color panel 1105 includes a color resist transparent layer 1107A, a color conversion transparent layer 1107B, a first adhesive material 1106A, a plurality of subpixel isolation (SI) structures 110, a capping layer, an ultraviolet (UV) blocking layer 1124, and a plurality of black matrix structures 109. Adjacent subpixel isolation structures 110 define the respective color conversion wells 113 of a plurality of subpixels 112. The color conversion material is placed in the color conversion wells 113. The color conversion material includes a cadmium material, a zinc material, or an indium phosphide material, or a combination thereof. The first color conversion material 113A is placed in the color conversion well 113 of the first subpixel 112A, the second color conversion material 113B is placed in the color conversion well 113 of the second subpixel 112B, and the third color conversion material 113C is placed in the color conversion well 113 of the third subpixel 112C. In some embodiments, the first subpixel 112A is a red subpixel, and the first color conversion material 113A is a red color conversion material. In some embodiments, the second subpixel 112B is a green subpixel, and the second color conversion material 113B is a green color conversion material. In some embodiments, the third subpixel 112C is a blue subpixel, and the third color conversion material 113C is a blue color conversion material.

[0085] When the micro-LED 104A of the first subpixel 112A is turned on, the red conversion material (e.g., the first color conversion material 113A) converts the light emitted from the micro-LED 104A into red light. When the micro-LED 104B of the second subpixel 112B is turned on, the green conversion material (e.g., the second color conversion material 113B) converts the light emitted from the micro-LED 104B into green light. When the micro-LED 104C of the blue subpixel (e.g., the third subpixel 112C) is turned on, the blue conversion material (e.g., the third color conversion material 113C) converts the light emitted from the micro-LED 104C into blue light. In one embodiment, the pixel 1100 includes a fourth subpixel. In some embodiments, the fourth subpixel does not contain color conversion material, i.e., there is no color conversion layer. In other embodiments, the fourth subpixel includes sacrificial material. In other embodiments, at least three subpixels 112 contain the same color conversion material. The fourth subpixel may later be filled with a color conversion material.

[0086] The subpixel separation structure 110 includes a photoresist material such as an epoxy resist. The photoresist material may be a negative-type photoresist. The photoresist may have a black polymer structure, and the black polymer is opaque to UV and visible light (for example, the black polymer has a high optical density or a white (e.g., light-reflective) polymer structure). The width 130 of the subpixel separation structure 110 may be about 2 μm to about 20 μm. The pitch 140 of the subpixel separation structure 110 may be about 10 μm to about 200 μm. The height 150 of the subpixel separation structure 110 may be about 2 μm to about 30 μm, for example, 5 μm to 15 μm. A coating material 118 is placed on the side walls and top surface of the subpixel separation structure 110. The coating material 118 on the subpixel separation structure 110 can parallelize the light to the display by reflecting the emitted light and encapsulating the converted light in each subpixel. In some embodiments, the coating material 118 is a metal layer. The metal layer includes, but is not limited to, aluminum, silver, or combinations thereof. In some embodiments, the coating material 118 may include a metal layer and a dielectric layer. The dielectric layer may be silicon nitride (SiN x The materials may include: The thickness of the metal layer is 100 nm to about 500 nm, and the thickness of the dielectric layer is 100 nm to about 500 nm. In some embodiments, the coating layer may be an absorbent material. In yet other embodiments, the sub-pixel separation structure 110 may incorporate reflective properties.

[0087] The black matrix structure 109 defines the color resist wells 115 for each of the multiple subpixels 112. A first color resist 115A is placed in the well 115 for the first subpixel 112A, a second color resist 115B is placed in the well 115 for the second subpixel 112B, and a third color resist 115C is placed in the well 115 for the third subpixel 112C. In some embodiments, the first color resist 115A is a red color resist, the second color resist 115B is a green color resist, and the third color resist 115C is a blue color resist. The color resists are patterned with UV light. The color resists can function as color filters to improve display color quality.

[0088] The black matrix structure 109 comprises a black matrix material or a black resist material. The width 135 of the black matrix structure 109 may be approximately 2 μm to approximately 20 μm. The pitch 145 of the black matrix structure 109 may be approximately 10 μm to approximately 40 μm. The height 155 of the black matrix structure 109 may be approximately 1 μm to 3 μm. The black matrix structure 109 reduces or eliminates the need for a polarizer in the pixel 1100. The black matrix structure 109 can reduce the thickness of the pixel 1100. Furthermore, the black matrix structure 109 reduces reflection of the pixel 1100 and improves the brightness of the pixel 1100.

[0089] In one embodiment, as shown in Figure 11A, the color conversion transparent layer 1107B, the first adhesive material 1106A, and the UV blocking layer 1124 are arranged between the subpixel separation structure 110 and the capping layer 120. The color conversion transparent layer 1107B is placed on top of the subpixel separation structure 110. The first adhesive material 1106A is placed on top of the color conversion transparent layer 1107B. The UV blocking layer 1124 is placed on top of the first adhesive material 1106A. The first adhesive material 1106A may also be placed between a portion of the color resist transparent layer 1107A and the color conversion transparent layer 1107B. For example, the first adhesive material 1106A is placed on top of the color conversion transparent layer 1107B, the sides of the UV blocking layer 1124, the sides of the capping layer 120, and the sides of the outermost black matrix structure 109.

[0090] In another embodiment, as shown in Figure 11B, the color conversion transparent layer 1107B and the first adhesive material 1106A are located between the subpixel separation structure 110 and the capping layer 120. The UV blocking layer 1124 is located between the black matrix structure 109 and the color resist transparent layer 1107A. The color conversion transparent layer 1107B is located on top of the subpixel separation structure 110. The first adhesive material 1106A is located on top of the color conversion transparent layer 1107B. The capping layer 120 is located on top of the first adhesive material 1106A. The first adhesive material 1106A may also be located between a portion of the color resist transparent layer 1107A and the color conversion transparent layer 1107B, for example, on top of the color conversion transparent layer 1107B, the sides of the UV blocking layer 1124, the sides of the capping layer 120, and the sides of the outermost black matrix structure 109.

[0091] The capping layer 120 is placed on the sub-pixel separation structure 110 and the color resist well 115. The capping layer 120 separates the color conversion well 113 from the color resist well 115. The thickness of the capping layer 120 is approximately 100 nm to approximately 1 μm. The thickness of the UV blocking layer 1124 is approximately 100 nm to approximately 1 μm. The first adhesive material 1106A includes an epoxy-based, acrylic-based, or urethane-based transparent adhesive, or a combination thereof.

[0092] The color resist transparent layer 1107A and the color conversion transparent layer 1107B are arranged on top of the sub-pixel separation structure 110 and the black matrix structure 109, respectively. The color resist transparent layer 1107A and the color conversion transparent layer 1107B include glass material, polymethyl methacrylate (PMMA) material, or a combination thereof. The structure of the pixel 1100 with the fourth arrangement 1101A and the fifth arrangement 1101B improves the color gamut, contrast, and uniformity of the pixel 1100, while reducing or eliminating crosstalk from above.

[0093] Figure 12 shows a flowchart of method 1200 for forming a pixel 1100 having a fourth arrangement 1101A. Figures 13A to 13G show schematic cross-sectional views of the pixel 1100 during method 1200 for forming a pixel 1100 having a fourth arrangement 1101A.

[0094] In operation 1201, as shown in Figure 13A, multiple black matrix structures 109 are patterned on the color resist transparent layer 1107A. The black matrix structures 109 may be patterned by a lithography process. The black matrix structures 109 define multiple color resist wells 115 of subpixels 112, for example, the color resist well 115 of the first subpixel 112A, the color resist well 115 of the second subpixel 112B, and the color resist well 115 of the third subpixel 112C.

[0095] In operation 1202, as shown in Figure 13B, color resists are placed in multiple color resist wells 115. The first color resist 115A is placed in the color resist well 115 of the first subpixel 112A, the second color resist 115B is placed in the color resist well 115 of the second subpixel 112B, and the third color resist 115C is placed in the color resist well 115 of the third subpixel 112C. The color resists are placed using an inkjet printing process.

[0096] In operation 1203, as shown in Figure 13C, the capping layer is placed on top of the black matrix structure 109 and the color resists (e.g., the first color resist 115A, the second color resist 115B, and the third color resist 115C). The capping layer 120 is placed on top of the black matrix structure 109 and the color resists using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or another deposition process.

[0097] In operation 1204, the ultraviolet (UV) blocking layer 624 is placed on top of the capping layer 120, as shown in Figure 13D. The UV blocking layer is placed using a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, or a spin coating process.

[0098] In operation 1205, as shown in Figure 13E, a plurality of sub-pixel separation structures 110 are placed on the color conversion transparent layer 107B. The sub-pixel separation structures define a plurality of color conversion wells 113. Color conversion materials are placed in the plurality of color conversion wells 113, for example, a first color conversion material 113A is placed in the color conversion well 113 of the first sub-pixel 112A, a second color conversion material 113B is placed in the color conversion well 113 of the second sub-pixel 112B, and a third color conversion material 113C is placed in the color conversion well 113 of the third sub-pixel 112C.

[0099] In operation 1206, as shown in Figure 13F, the color resist transparent layer 1107A is bonded to the color conversion transparent layer 1107B to form the color panel 1105. The first adhesive bonds the color resist transparent layer 1107A and the color conversion transparent layer 1107B.

[0100] In operation 1207, as shown in Figure 13G, the color panel 1105 is bonded to the LED panel 103. The second adhesive material 1106B bonds the color panel 1105 to the LED panel 103. The LED panel 103 includes a backplane 102 and a plurality of micro-LEDs 104 arranged on the backplane 102. The plurality of micro-LEDs 104 may include a first micro-LED 104A corresponding to a first sub-pixel 112A, a second micro-LED 104B corresponding to a second sub-pixel 112B, and a third micro-LED 104C corresponding to a third sub-pixel 112C.

[0101] While the above applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended claims.

Claims

1. transparent layer, A plurality of subpixel separation structures defining a plurality of color conversion wells of a plurality of subpixels, wherein the plurality of color conversion wells are The first color conversion well of the first subpixel, The second color conversion well of the second subpixel, and The third color conversion well of the third subpixel, Includes, A first color conversion material is placed in the first color conversion well. A second color conversion material is placed in the second color conversion well. A third color conversion material is placed in the third color conversion well. Multiple subpixel separation structures, A plurality of black matrix structures are disposed between the plurality of subpixel separation structures and the transparent layer, and define a plurality of color resist wells of the plurality of subpixels, wherein the plurality of color resist wells are The first color resist well of the first subpixel, The second color resist well of the second subpixel, and The third color resist well of the third subpixel, including, Multiple black matrix structures, It features a color panel, A plurality of microLEDs, wherein a first microLED among the plurality of microLEDs corresponds to a first subpixel, a second microLED among the plurality of microLEDs corresponds to a second subpixel, and a third microLED among the plurality of microLEDs corresponds to a third subpixel, and A backplane, wherein the plurality of microLEDs are arranged on the backplane, A light-emitting diode (LED) panel equipped with, An adhesive material is placed between the LED panel and the color panel, A pixel equipped with a

2. A capping layer is disposed between the plurality of subpixel separation structures and the plurality of black matrix structures, An ultraviolet (UV) blocking layer is disposed between the plurality of subpixel separation structures and the capping layer, The pixel according to claim 1, further comprising:

3. A capping layer is disposed between the plurality of subpixel separation structures and the plurality of black matrix structures, An ultraviolet (UV) blocking layer is disposed between the plurality of black matrix structures and the transparent layer, The pixel according to claim 1, further comprising:

4. The pixel according to claim 1, wherein the coating material is arranged on the plurality of sub-pixel separation structures.

5. The pixel according to claim 1, wherein the first color conversion material is a red color conversion material, the second color conversion material is a green color conversion material, and the third color conversion material is a blue color conversion material.

6. The pixel according to claim 1, wherein the first color resist is a red color resist, the second color resist is a green color resist, and the third color resist is a blue color resist.

7. Color resist transparent layer, Color-changing transparent layer, A plurality of subpixel separation structures defining a plurality of color conversion wells of a plurality of subpixels, wherein the plurality of color conversion wells are The first color conversion well of the first subpixel, The second color conversion well of the second subpixel, and The third color conversion well of the third subpixel, Includes, A first color conversion material is placed in the first color conversion well. A second color conversion material is placed in the second color conversion well. A third color conversion material is placed in the third color conversion well. Multiple subpixel separation structures, A first adhesive material disposed between the color conversion transparent layer and the color resist transparent layer, A plurality of black matrix structures are disposed between the transparent layer and the subpixel separation structure, defining a plurality of color resist wells of the plurality of subpixels, wherein the plurality of color resist wells are The first color resist well of the first subpixel, The second color resist well of the second subpixel, and The third color resist well of the third subpixel, including, Multiple black matrix structures, It features a color panel, A plurality of microLEDs, wherein a first microLED among the plurality of microLEDs corresponds to a first subpixel, a second microLED among the plurality of microLEDs corresponds to a second subpixel, and a third microLED among the plurality of microLEDs corresponds to a third subpixel, and A backplane, wherein the plurality of microLEDs are arranged on the backplane, A light-emitting diode (LED) panel equipped with, A second adhesive material is placed between the LED panel and the color panel, A pixel equipped with a

8. A capping layer is disposed between the plurality of subpixel separation structures and the plurality of black matrix structures, An ultraviolet (UV) blocking layer is disposed between the plurality of subpixel separation structures and the capping layer, The pixel according to claim 7, further comprising:

9. A capping layer is disposed between the plurality of subpixel separation structures and the plurality of black matrix structures, An ultraviolet (UV) blocking layer is disposed between the plurality of black matrix structures and the transparent layer, The pixel according to claim 7, further comprising:

10. The pixel according to claim 7, wherein a coating material is disposed on the plurality of sub-pixel separation structures.

11. The pixel according to claim 7, wherein the first color conversion material is a red conversion material, the second color conversion material is a green conversion material, and the third color conversion material is a blue conversion material.

12. The pixel according to claim 7, wherein the first color resist is a red color resist, the second color resist is a green color resist, and the third color resist is a blue color resist.

13. The steps include patterning multiple black matrix structures on a transparent layer, The steps include: placing a color resist in the plurality of color resist wells defined by the black matrix structure; The steps include placing a separation structure layer on the black matrix structure and the plurality of color resist wells, The steps include: patterning the separation structure layer to form the plurality of subpixel separation structures; A step of forming a color panel by placing a color conversion material in the plurality of color conversion wells, wherein the plurality of color conversion wells are defined by the plurality of sub-pixel separation structures, A step of bonding the color panel to a light-emitting diode (LED) panel, wherein the LED panel comprises a plurality of microLEDs arranged on a backplane, A method for creating pixels, including [a specific element].

14. The step of placing a coating material on the plurality of sub-pixel separation structures, The method according to claim 13, further comprising:

15. The steps include placing a capping layer on the black matrix structure and the plurality of color resist wells, The steps include placing a UV-blocking layer on top of the capping layer, The method according to claim 13, further comprising:

16. The steps include placing a capping layer on the black matrix structure and the plurality of color resist wells, The steps include placing a UV-blocking layer on the transparent layer, The method according to claim 13, further comprising:

17. The transparent layer is a color resist transparent layer, The steps include placing a capping layer on the black matrix structure and the plurality of color resist wells, The steps include placing a second adhesive material on the capping layer, The steps include placing a color-changing transparent layer on the second adhesive material, The method according to claim 13, further comprising:

18. The aforementioned color conversion material A first color conversion material is placed in the color conversion well of the first subpixel, A second color conversion material is placed in the color conversion well of the second subpixel, A third color conversion material is placed in the color conversion well of the third subpixel, The method according to claim 13, including the method described in claim 13.

19. The method according to claim 18, wherein the first color conversion material is a red color conversion material, the second color conversion material is a green color conversion material, and the third color conversion material is a blue color conversion material.

20. The first color resist well of the first subpixel, The second color resist well of the second subpixel, The third color resist well of the third subpixel, The method according to claim 13, further comprising:

Images