Plasma-enhanced thin film deposition furnace tube

Abstract

The present invention relates to a plasma-enhanced thin-film deposition furnace tube comprising a process tube having a reaction chamber and at least one ionization chamber inside, and a gas supply tube for introducing a process gas to be ionized into the ionization chamber. After the process gas to be ionized is ionized in the ionization chamber, the ionized process gas is introduced into the reaction chamber to deposit a thin film corresponding to the surface of a substrate, or to achieve layer-by-layer growth of a thin film on the substrate surface via an adsorption reaction. The first electrode and the second electrode are positioned intermediately between the process tube and the ionization chamber. The first electrode and / or the second electrode are supported by a baffle plate, one end of which is connected to the corresponding electrode and the other end of which is connected to the inner wall of the ionization chamber, so that the process gas to be ionized passes between the first electrode and the second electrode. The present invention improves the ionization efficiency of the process gas.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing equipment, and particularly to a furnace tube for plasma-enhanced thin film deposition.

Background Art

[0002] The thin film deposition process is an important process in semiconductor manufacturing. Since the thin film is a functional material layer of the chip structure, the thin film remains in the chip even after the manufacturing, packaging, and inspection processes are completed. The technical parameters of the thin film directly affect the performance of the chip. Since high precision is required for semiconductor devices, thin films are usually formed by a thin film deposition process. The thin film preparation process is classified into physical vapor deposition (PVD) and chemical vapor deposition (CVD) based on the film formation method. Here, CVD refers to a process of forming a solid film on the surface of a silicon wafer through a chemical reaction by mixing gases, and the usage rate of CVD process equipment is high. The CVD process further includes low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), etc., and plasma-enhanced atomic layer deposition (PEALD) can also be adopted for ALD.

[0003] The feature of PECVD is to ionize the gas containing the atoms constituting the film by microwave or high frequency to locally form plasma. Since plasma has strong chemical activity and is easy to react, the desired thin film is formed on the substrate. In the conventional CVD process, since chemical gas is continuously introduced into the vacuum chamber, the film deposition process is also continuously performed. On the other hand, in the ALD process, different reaction precursors are alternately introduced into the reaction chamber in the form of gas pulses, so it is not a continuous process.

[0004] In the prior art, in plasma-enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD) process equipment, a furnace tube type substrate processing device may be adopted.

[0005] As shown in Figure 11(a), Figure 11(a) is a schematic cross-sectional view of a substrate processing apparatus disclosed in Chinese Patent Application No. ZL03109343.4. The substrate processing apparatus includes a reaction tube 1, a buffer chamber 2 located within the reaction tube 1, a gas nozzle 4 located within the buffer chamber 2, an electrode 5 for generating plasma, and a boat 6 for mounting a plurality of wafers 7. Here, a gas nozzle input port 10 is used to introduce a chemical gas. The chemical gas enters the buffer chamber 2 through a plurality of gas nozzle holes 9 and is then supplied to the plurality of wafers 7 through a plurality of buffer chamber holes 3 to deposit a thin film. Finally, the inert gas and reaction residual gas are discharged from the exhaust port 8 of the reaction tube 1.

[0006] As shown in Figures 11(b) and 11(c), Figures 11(b) and 11(c) are schematic cross-sectional views corresponding to two different embodiments of Figure 11(a). In these two embodiments, a gap exists between the multiple electrodes 5 and the side wall of the buffer chamber 2. After the chemical gas is introduced into the buffer chamber 2 from the gas supply chamber, only a portion of the chemical gas flows out of the buffer chamber hole 3 through the gap between the two electrodes 5, while the remaining chemical gas flows directly out of the buffer chamber hole 3 along the gap between the multiple electrodes 5 and the side wall of the buffer chamber 2. The chemical gas does not pass completely between the two electrodes 5, and as a result, only a portion of the chemical gas is ionized, while the rest remains unionized.

[0007] As shown in Figure 11(d), Figure 11(d) is a schematic cross-sectional view of another embodiment of Figure 11(a). In this embodiment, two electrodes 5 are positioned on either side of the buffer chamber hole 3, and the electrodes 5 are close to the inner wall of the buffer chamber 2, thereby defining the main flow direction of the gas. However, because the electrodes 5 are close to the inner wall of the buffer chamber 2, the side of the electrodes 5 closer to the inner wall of the buffer chamber 2 is not fully utilized, and the electric field generated on this side is absorbed by the inner wall of the buffer chamber 2 and is not used for the ionization of the chemical gas. In addition, because the distance between the gas nozzle hole 9 and the buffer chamber hole 3 is short and the ionization region between the two electrodes is limited, the chemical gas is introduced into the buffer chamber 2 through the gas nozzle hole 9 and then flows out of the buffer chamber hole 3 without being completely ionized, resulting in a decrease in the ionization efficiency of the chemical gas and an increase in power consumption. [Overview of the Initiative]

[0008] In view of the above technical challenges, the object of the present invention is to improve the ionization efficiency of process gas in a furnace tube. To achieve the above object, the present invention provides a furnace tube for plasma-enhanced thin film deposition.

[0009] In some embodiments, the plasma-enhanced thin film deposition furnace tube is The process tube includes a reaction chamber capable of accommodating multiple substrates, and at least one ionization chamber arranged along the stacking direction of the multiple substrates, wherein the ionization chamber has a plurality of first gas holes communicating with the reaction chamber, A gas supply tube located within the ionization chamber and having a plurality of second gas holes arranged sequentially along the stacking direction of the plurality of substrates, the gas supply tube is used to introduce a process gas to be ionized, the process gas to be ionized is introduced into the ionization chamber through the second gas holes, and after being ionized in the ionization chamber, the ionized process gas is introduced into the reaction chamber through the first gas holes, thereby forming a thin film corresponding to the surface of the substrates. The process tube and the ionization chamber are located at an intermediate position and are arranged along the stacking direction of the plurality of substrates, comprising a first electrode and a second electrode, The first electrode and / or the second electrode are supported by baffle plates, one end of each baffle plate is connected to the corresponding electrode, and the other end of each baffle plate is connected to the inner wall of the ionization chamber, thereby improving the ionization efficiency of the process gas as it passes between the first electrode and the second electrode, and the first gas hole is located on a line perpendicular to the line connecting the first electrode and the second electrode.

[0010] In some embodiments, the plasma-enhanced thin film deposition furnace tube is The process tube includes a reaction chamber capable of accommodating multiple substrates, and at least one ionization chamber arranged along the stacking direction of the multiple substrates, wherein the ionization chamber has a plurality of first gas holes communicating with the reaction chamber, A gas supply tube located within the ionization chamber and having a plurality of second gas holes arranged sequentially along the stacking direction of the plurality of substrates, the gas supply tube is used to introduce a process gas to be ionized, the process gas to be ionized is introduced into the ionization chamber through the second gas holes, and after being ionized in the ionization chamber, the ionized process gas is introduced into the reaction chamber through the first gas holes, thereby forming a thin film corresponding to the surface of the substrates. The invention is characterized by comprising a first electrode and a second electrode, which are arranged in the process tube and along the stacking direction of the plurality of substrates, wherein the first electrode and / or the second electrode are located on the side wall of the ionization chamber, and a portion of the electrode located on the side wall of the ionization chamber is located inside the ionization chamber, and the remaining portion of the electrode is located outside the ionization chamber.

[0011] Compared to conventional technology, in one respect, the present invention provides a baffle plate between the electrode and the inner wall of the ionization chamber, allowing the process gas to pass between the two electrodes and preventing the process gas from directly flowing out of the ionization chamber through the gap between the electrode and the inner wall of the ionization chamber without passing between the two electrodes. This improves the ionization efficiency of the process gas and maximizes the ionization of the process gas. In another respect, by providing at least one electrode on the side wall of the ionization chamber, with a portion of the electrode on the side wall inside the ionization chamber and the remaining portion outside the ionization chamber, when the process gas is ionized, the electrode generates an electric field only in the portion located inside the ionization chamber, and does not generate an electric field in the portion located outside the ionization chamber. As a result, all of the electric field generated by the electrode is used for the ionization of the process gas and is not absorbed by the side wall of the ionization chamber, thereby reducing the power consumption of the device. [Brief explanation of the drawing]

[0012] The above-mentioned features, technical features, advantages, and embodiments of the present invention will be described more clearly and understandably below with reference to the attached drawings and preferred embodiments. Figures 1(a) to 1(e) are schematic cross-sectional views of a series of embodiments relating to the furnace tube of the present invention. Figures 2(a) to 2(e) are schematic cross-sectional views of a series of other embodiments relating to the furnace tube of the present invention. Figures 3(a) to 3(e) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 4(a) to 4(d) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 5(a) to 5(e) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 6(a) to 6(d) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 7(a) to 7(e) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 8(a) and 8(b) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 9(a) to 9(c) are schematic cross-sectional views of yet another set of embodiments relating to the furnace tube of the present invention. Figures 10(a) and 10(b) are schematic cross-sectional views showing the three-dimensional structure of a series of embodiments relating to the furnace tube of the present invention. Figures 11(a) to 11(d) are schematic diagrams of a series of structures of a substrate processing apparatus related to the background of the present invention. [Modes for carrying out the invention]

[0013] To more clearly illustrate embodiments of the present invention or technical solutions in the prior art, specific embodiments of the present invention will be described below with reference to the accompanying drawings. The drawings in the following description represent only some embodiments of the present invention, and it is clear that those skilled in the art can obtain other drawings and other embodiments from these drawings without any creative effort.

[0014] For the sake of simplifying the drawings, only the parts relevant to the invention are shown schematically, and these parts do not represent the actual structure of the product. Furthermore, in order to make the drawings concise and easy to understand, some figures show only a portion of the components having the same structure or function, or only some of the components. In this specification, "one" means not only "only one" but also "more than one."

[0015] In this specification, unless otherwise specified and defined, the terms “attached,” “connected,” and “communicated” should be interpreted broadly, and may include, for example, fixed connections, detachable connections, and integral connections. Connections may be mechanical or electrical, and may be direct or indirect connections via an intermediate medium. Furthermore, they may also refer to internal communication between two elements. To those skilled in the art, the specific meanings of the above terms in this invention can be understood on a case-by-case basis.

[0016] As shown in Figures 1(a) to 10(b), the present invention discloses furnace tubes 100 in various embodiments, the main differences of which embodiments are the internal structure of the ionization chamber 140 and the arrangement of electrodes (e.g., first electrode 161 and second electrode 162) and gas supply pipes 150 within the ionization chamber 140. With respect to the overall structure of the furnace tube 100, each embodiment employs a similar structure and includes at least one process tube 120 for processing a substrate by a plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD) process, and a power supply unit for supplying power to electrodes (such as the first electrode 161 and second electrode 162).

[0017] Specifically, the process tube 120 contains a reaction chamber 130 for performing process processing on a substrate, an ionization chamber 140 for ionizing process gas, a gas supply pipe 150 for supplying the process gas to be ionized into the ionization chamber 140, a plurality of additional gas supply pipes 180 for directly supplying process gas or inert gas into the reaction chamber 130, and a heater (not shown) for heating the process tube 120. Below the reaction chamber 130, there is a wafer boat for mounting substrates and a lifting mechanism for moving the wafer boat up and down. The process tube 120, as well as the reaction chamber 130 and ionization chamber 140 located within the process tube 120, all have a vertical, hollow cylindrical structure. An opening is provided at the bottom of the reaction chamber 130 for the wafer boat to enter and exit, and the wafer boat can move up and down by the operation of the lifting mechanism, allowing the substrate mounted on the wafer boat to enter and exit the reaction chamber 130 together with the wafer boat.

[0018] Figure 10(a) is a cross-sectional view of the furnace tube 100 along its axial direction, and Figure 10(b) is a longitudinal cross-sectional view of the furnace tube 100 outside the ionization chamber 140. The ionization chamber 140 is provided with at least one pair of electrodes (for example, a first electrode 161 and a second electrode 162) and a gas supply pipe 150, all of which are fixed vertically within the ionization chamber 140. Here, a plurality of first gas holes 144 communicating with the reaction chamber 130 are arranged sequentially along the vertical direction or the stacking direction of the plurality of substrates. The first electrode 161 and the second electrode 162 are connected to a power supply unit that generates a high-frequency electric field to ionize the process gas. The ionization density is highest between the first electrode 161 and the second electrode 162. The distance between the first electrode 161 and the second electrode 162 is preferably in the range of 15 mm to 60 mm, and the power for ionization is preferably in the range of 100 to 2000 W. Multiple second gas holes 151 are sequentially provided on the gas supply pipe 150 in the vertical direction or along the stacking direction of the multiple substrates, and the bottom of the gas supply pipe 150 is connected to an external gas source to introduce the process gas to be ionized into the ionization chamber 140 via the second gas holes 151. After the above-mentioned process gas to be ionized is introduced into the ionization chamber 140, it is ionized by the first electrode 161 and the second electrode 162, and then introduced into the reaction chamber 130 via the first gas hole 144 to form a thin film corresponding to the substrate surface, or an adsorption reaction occurs to realize the growth of layers of thin films on the substrate surface. The cross-sectional shape of the ionization chamber 140 is not limited to the fan-ring shape shown in the figures of each embodiment, but can be selected as a regular or irregular closed shape such as a semicircle, triangle, or rectangle depending on the actual situation. The gas flow rate in the gas supply pipe 150 is preferably in the range of 1 L / min to 30 L / min. The ratio of the flow area or cross-sectional area to the plurality of second gas holes 151 in the gas supply pipe 150 is preferably in the range of 1:(0.21 to 0.48).By limiting the ratio of the flow area or cross-sectional area of ​​the gas supply pipe 150 to the multiple second gas holes 151 within the above range, the flow rate of the process gas in the gas supply pipe 150 and the amount supplied to the ionization chamber 140 via it can be effectively controlled, thereby enabling the process gas to obtain a sufficient ionization time in the ionization chamber 140.

[0019] Furthermore, as shown in Figures 1(a), 1(b), 1(c), and 1(e), a multi-tube furnace tube structure is employed in some embodiments of the present invention. In these embodiments, the process tube 120 further comprises a fan-shaped annular inner tube 110, where the inner arc portion of the inner tube 110 and the process tube 120 form a concentric structure, and multiple substrates are arranged inside the inner tube 110. A hollow suction chamber 112 is formed between the inner tube 110 and the process tube 120, and the inner tube 110 has a plurality of third gas holes 111 that communicate with the reaction chamber 130, arranged sequentially in the vertical direction or along the stacking direction of the plurality of substrates. The third gas holes 111 are arranged opposite the ionization chamber 140, and the third gas holes 111 communicate with the suction chamber 112. An exhaust pipe 113 communicating with the suction chamber 112 is provided at the bottom of the process tube 120, and the exhaust pipe 113 is arranged opposite the ionization chamber 140. Since the radial distance d1 between the first gas hole 144 and the inner wall of the process tube 120 is set to be greater than or equal to the radial distance d2 between the inner tube 110 and the inner wall of the process tube 120, the first gas hole 144 can be brought closer to multiple substrates, thereby increasing the probability that the process gas will reach the substrate surface.

[0020] As shown in Figure 1(d), in another embodiment of the present invention, a single-tube furnace tube structure is employed, in which the inner tube 110 is not provided inside the process tube 120. The internal structure of the ionization chamber 140 shown in each embodiment of the present invention is not limited to the type of furnace tube, and different ionization chambers 140 can be applied to either a single-tube furnace tube structure or a multi-tube furnace tube structure without departing from the principles of the present invention.

[0021] Also, as shown in FIGS. 9(a), 9(b), and 9(c), in some embodiments of the present invention, a configuration including a plurality of ionization chambers 140 is adopted. In these embodiments, the form of the internal structure of the ionization chamber 140 in any embodiment of the present invention can be selected according to actual needs, and the internal structures of different ionization chambers 140 may be the same or different.

[0022] Also, as shown in FIGS. 1(a), 1(b), and 1(c), in some embodiments of the present invention adopting a multi-tube type furnace tube structure, the inner tube 110 and the process tube 120 may be fixedly connected by a radial wall, and the additional gas supply tube 180 is arranged near the ionization chamber 140 and close to the inner wall of the process tube 120. As shown in FIG. 1(e), in another embodiment of the present invention adopting a multi-tube type furnace tube structure, the inner tube 110 may be fixed to the left side wall 141 and the right side wall 142 of the ionization chamber 140, and the additional gas supply tube 180 is arranged near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply tube 180 is larger than the radius of the inner tube 110 at other positions. Since the additional gas supply tube 180 and the first gas hole 144 are arranged on substantially the same arc, the distance between the additional gas supply tube 180 and the plurality of substrates is substantially equal to the distance between the first gas hole 144 and the plurality of substrates.

[0023] Furthermore, it should be noted that the first electrode 161 and the second electrode 162 in the present invention are arranged at the intermediate position of the ionization chamber 140. That is, the first electrode 161 and the second electrode 162 are arranged at the intermediate position between the first inner side wall 146 and the second inner side wall 143 of the ionization chamber 140. The first electrode 161 is arranged at the intermediate position between the left side wall 141 and the right side wall

[0024] For example, during an atomic layer deposition (ALD) process, a first process gas (e.g., dichlorosilane) is introduced from an additional gas supply pipe 180 into a process pipe 120. After the adsorption of the first process gas onto the substrate surface reaches saturation, an inert gas is introduced into the process pipe 120 through the additional gas supply pipe 180. The inert gas discharges the excess first process gas in the process pipe 120 from the exhaust pipe 113 to the outside of the process pipe 120 through a plurality of third gas holes 111, and only the portion adsorbed on the substrate surface is retained. Thereafter, a second process gas (e.g., ammonia gas) is introduced into an ionization chamber 140 through a plurality of second gas holes 151 in a gas supply pipe 150 and the ionization chamber 140, ionization is completed under the action of a first electrode 161 and a second electrode 162, and is introduced into a reaction chamber 130 through a first gas hole 144, and reacts with the first process gas adsorbed on the substrate surface to form a thin film (e.g., a silicon nitride thin film). After the adsorption reaction with the first process gas is completed, the introduction of the second process gas into the ionization chamber 140 is stopped, the reaction by-products on the substrate surface are purged, and an inert gas is introduced again into the process pipe 120 through the additional gas supply pipe 180 to discharge the by-products through the exhaust pipe 113, thereby completing the primary atomic layer deposition. In a semiconductor process, by repeatedly executing the above steps as required, a thin film with a desired film thickness can be formed on the substrate surface.

[0025] Hereinafter, each embodiment of the present invention will be described in order with reference to FIGS. 1(a) to 9(c).

[0026] (First Embodiment) As shown in FIG. 1(a), in the first embodiment of the present invention, based on the overall structure of a furnace tube 100, the internal structure of an ionization chamber 140 and the arrangement positions of a first electrode 161, a second electrode 162, and a gas supply pipe 150 in the ionization chamber 140 are further defined.

[0027] In this embodiment, the ionization chamber 140 comprises a left wall 141, a right wall 142, a first inner wall 146, and a second inner wall 143. The first inner wall 146 may be formed by the inner wall of the process tube 120 located between the left wall 141 and the right wall 142. Here, one end of the left wall 141 and the right wall 142 are fixedly connected to the first inner wall 146, and the other ends are connected to both ends of the second inner wall 143. The second inner wall 143 corresponds to the first inner wall 146 and is located within the radial range of the inner tube 110.

[0028] Within the ionization chamber 140, the first electrode 161 and the second electrode 162 are arranged sequentially on the same arc, the center of which is the same as the center of the process tube 120, and the radius of which is between the radial range of the process tube 120 and the inner tube 110. The gas supply tube 150 is located close to the left wall 141 and is located on the same side as the first electrode 161 and the second electrode 162. The first electrode 161 is located at an intermediate position between the left wall 141 and the right wall 142, and the second electrode 162 is located close to the right wall 142. The first gas hole 144 is located on a line perpendicular to the line connecting the first electrode 161 and the second electrode 162.

[0029] Furthermore, the baffle plates (171, 172) are connected to the first electrode 161 and the second electrode 162 and to the second inner wall 143, respectively. Specifically, the first electrode 161 is connected to the second inner wall 143 located to the left of the first gas hole 144 via the first baffle plate 171, and the second electrode 162 is connected to the second inner wall 143 located to the right of the first gas hole 144 via the second baffle plate 172. The first baffle plate 171 extends along the length of the first electrode 161 from the bottom to the top of the ionization chamber 140, and the second baffle plate 172 extends along the length of the second electrode 162 from the bottom to the top of the ionization chamber 140. In the vertical direction, the upper and lower ends of the first electrode 161 and the second electrode 162 are fixed to the top and bottom of the ionization chamber 140, respectively. In the horizontal direction, the first electrode 161 is supported by the first baffle plate 171, and the second electrode 162 is supported by the second baffle plate 172. The first baffle plate 171 and the second baffle plate 172 are parallel to each other. A process gas flow path is formed between the first electrode 161 and the second electrode 162, thereby allowing the process gas to pass through the ionization region between the first electrode 161 and the second electrode 162. Furthermore, this prevents the process gas from escaping directly from the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140 without passing between the first electrode 161 and the second electrode 162, thereby improving the ionization efficiency of the process gas. The baffle plates (171, 172) are made of an insulating material, preferably quartz.

[0030] In this embodiment, the lifting mechanism lifts a wafer boat carrying multiple substrates into the reaction chamber 130, and the process gas to be ionized is introduced into the ionization chamber 140 via the gas supply pipe 150 and the second gas hole 151. In the ionization chamber 140, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, and the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the second electrode 162. As a result, the process gas to be ionized must pass between the first electrode 161 and the second electrode 162 and between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 via the first gas hole 144, thereby improving the ionization efficiency of the process gas. The ionized process gas is introduced into the reaction chamber 130 through each first gas hole 144 and supplied uniformly to each substrate mounted on the wafer boat. When the gas in the reaction chamber 130 is replaced or discharged, the existing gas in the reaction chamber 130 is first pumped into the suction chamber 112 through a plurality of third gas holes 111, and then exhausted from the process tube 120 by the exhaust pipe 113.

[0031] (Second Embodiment) As shown in Figure 1(b), in a second embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0032] The only difference between this embodiment and the first embodiment is the placement of the second baffle plate 172. In the first embodiment, the second baffle plate 172 is positioned between the second electrode 162 and the second inner wall 143 located to the right of the first gas hole 144. In this embodiment, one end of the second baffle plate 172 is connected to the second electrode 162, and the other end is connected to the connection point between the right side wall 142 and the first inner wall 146, so the second baffle plate 172 forms an acute angle with the right side wall 142.

[0033] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, and the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144. This prevents the process gas from escaping directly out of the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140, thereby improving the ionization efficiency of the process gas.

[0034] (Third embodiment) As shown in Figure 1(c), in a third embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0035] The only difference between this embodiment and the first embodiment is the arrangement of the first baffle plate 171 and the second baffle plate 172. In the first embodiment, the first baffle plate 171 is perpendicular to the second inner wall 143, and the second baffle plate 172 is positioned between the second electrode 162 and the second inner wall 143 located to the right of the first gas hole 144. In this embodiment, one end of the first baffle plate 171 is connected to the first electrode 161, and the other end of the first baffle plate 171 is connected to the second inner wall 143. The connection position between the first baffle plate 171 and the second inner wall 143 is biased towards the gas supply pipe 150 side, thereby causing the first baffle plate 171 to form an acute angle with the second inner wall 143. One end of the second baffle plate 172 is connected to the second electrode 162, and the other end is connected to the connection point between the right side wall 142 and the first inner wall 146, thereby forming an acute angle between the second baffle plate 172 and the right side wall 142. The first baffle plate 171 is parallel to the extension of the second baffle plate 172.

[0036] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, and the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162. As the first baffle plate 171 is inclined, the process gas to be ionized supplied by the gas supply pipe 150 flows more easily between the first electrode 161 and the first inner wall 146. On the other hand, the influence of the first baffle plate 171 on the ionization region between the first electrode 161 and the second electrode 162 is reduced, and the space of the ionization region between the first electrode 161 and the second electrode 162 is expanded. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144. This prevents the process gas from escaping directly out of the ionization chamber 140 through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140, thereby improving the ionization efficiency of the process gas.

[0037] (Fourth Embodiment) As shown in Figure 1(d), in the fourth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0038] The only difference between this embodiment and the second embodiment is that in this embodiment, the inner tube 110 is not provided inside the process tube 120, while in the second embodiment, the inner tube 110 is provided inside the process tube 120 as a multi-tube type furnace tube. The other configurations are the same as those of the second embodiment, so they will not be described again here.

[0039] Furthermore, as shown in Figure 1(e), the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions. The additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on an arc substantially identical to that of the first gas hole 144, so that the distance from the additional gas supply pipe 180 to the multiple substrates is substantially equal to the distance from the first gas hole 144 to the multiple substrates.

[0040] (Fifth embodiment) As shown in Figure 2(a), in the fifth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0041] The only difference between this embodiment and the first embodiment is the addition of a third baffle plate 173. In the first embodiment, the first electrode 161 is connected to the second inner wall 143 located to the left of the first gas hole 144 via the first baffle plate 171, and the second electrode 162 is connected to the second inner wall 143 located to the right of the first gas hole 144 via the second baffle plate 172. Furthermore, no baffle plate is provided between the second electrode 162 and the first inner wall 146. In this embodiment, the first baffle plate 171 and the second baffle plate 172 are positioned in the same locations as in the first embodiment, and the second electrode 162 and the first inner wall 146 are connected to the third baffle plate 173. The third baffle plate 173 is located on the extension of the second baffle plate 172, and a vacuum chamber 145 is provided between the right side of the second baffle plate 172 and the third baffle plate 173 and the right side wall 142 of the ionization chamber 140. The second electrode 162 is partially located in the ionization chamber 140 to the left of the second baffle plate 172 and the third baffle plate 173, and partially located in the vacuum chamber 145 to the right of the second baffle plate 172 and the third baffle plate 173. The degree of vacuum in the vacuum chamber 145 can be controlled independently and is not affected by the gas flow in the ionization chamber 140 and the reaction chamber 130. When the vacuum chamber 145 is maintained at atmospheric pressure or low vacuum, the second electrode 162 does not generate an electric field in the vacuum chamber 145, so the electric fields generated by the second electrode 162 and the first electrode 161 are always stably concentrated between the second electrode 162 and the first electrode 161. In this case, the preferred vacuum level inside the vacuum chamber 145 is 0.005 Torr to 10 Torr.

[0042] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle plate 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. Therefore, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since the second electrode 162 is partially positioned within the vacuum chamber 145, it generates an electric field only within the ionization chamber 140 located to the left of the second baffle plate 172 and the third baffle plate 173, and does not generate an electric field within the vacuum chamber 145, thus contributing to power saving.

[0043] (Sixth Embodiment) As shown in Figure 2(b), in the sixth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0044] The only difference between this embodiment and the fifth embodiment is the arrangement of the second baffle plate 172 and the third baffle plate 173. In the first embodiment, the second baffle plate 172 and the third baffle plate 173 are arranged parallel to the right side wall 142. In this embodiment, the connection position between the second baffle plate 172 and the second inner wall 143 is biased towards the right side wall 142, so that the second baffle plate 172 forms an acute angle with the right side wall 142. Similarly, the connection position between the third baffle plate 173 and the first inner wall 146 is also biased towards the right side wall 142, so that the third baffle plate 173 forms an acute angle with the right side wall 142.

[0045] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle plate 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. Furthermore, because the third baffle plate 173 is inclined, the process gas to be ionized can easily flow between the first baffle plate 171 and the second baffle plate 172. Therefore, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since both the second baffle plate 172 and the third baffle plate 173 are inclined toward the right wall 142, the portion of the second electrode 162 exposed in the ionization chamber 140 on the left side of the second baffle plate 172 and the third baffle plate 173 is larger than the portion located in the vacuum chamber 145, thereby expanding the ionization region of the second electrode 162 within the ionization chamber 140. Moreover, since part of the second electrode 162 is located in the ionization chamber 140 and the other part is located in the vacuum chamber 145, the second electrode 162 generates an electric field only in the ionization chamber 140 on the left side of the second baffle plate 172 and the third baffle plate 173, and does not generate an electric field in the vacuum chamber 145. As a result, all of the electric field generated by the second electrode 162 is used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0046] (Seventh Embodiment) As shown in Figure 2(c), in the seventh embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0047] The only difference between this embodiment and the fifth embodiment is the position of the first baffle plate 171. In the fifth embodiment, the first baffle plate 171 is positioned perpendicular to the second inner wall 143. In this embodiment, the connection point between the first baffle plate 171 and the second inner wall 143 is biased towards the left wall 141 side, so that the first baffle plate 171 forms an acute angle with the second inner wall 143.

[0048] In this embodiment, the first baffle plate 171 blocks the flow of ionized process gas along the space between the second inner wall 143 and the first electrode 161, the second baffle plate 172 blocks the flow of ionized process gas along the space between the right side wall 142 and the second electrode 162, and the third baffle plate 173 blocks the flow of ionized process gas along the space between the first inner wall 146 and the second electrode 162. Furthermore, because the first baffle plate 171 is inclined, the ionized process gas flows more easily between the first baffle plate 171 and the second baffle plate 172. As a result, the ionized process gas needs to pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144. Since the process gas is prevented from directly escaping outside the ionization chamber 140 by passing through the gap between the first electrode 161 or the second electrode 162 and the inner wall of the ionization chamber 140 without passing between the first electrode 161 and the second electrode 162, the ionization efficiency of the process gas is improved. In addition, because the connection position between the first baffle plate 171 and the second inner wall 143 is biased toward the left wall 141 side, the influence of the first baffle plate 171 on the ionization region between the first electrode 161 and the second electrode 162 is reduced, and the space of the ionization region between the first electrode 161 and the second electrode 162 is expanded. Furthermore, since part of the second electrode 162 is located inside the ionization chamber 140 and the other part is located inside the vacuum chamber 145, the second electrode 162 generates an electric field only inside the ionization chamber 140 on the left side of the second baffle plate 172 and the third baffle plate 173, and does not generate an electric field inside the vacuum chamber 145. As a result, the electric field generated by the second electrode 162 is entirely used for ionizing the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0049] (Eighth embodiment) As shown in Figure 2(d), in the eighth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0050] The only difference between this embodiment and the sixth embodiment is the position of the first baffle plate 171. In the sixth embodiment, the first baffle plate 171 is positioned perpendicular to the second inner wall 143. In this embodiment, the connection point between the first baffle plate 171 and the second inner wall 143 is biased towards the left wall 141 side, so that the first baffle plate 171 forms an acute angle with the second inner wall 143.

[0051] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161, the second baffle plate 172 blocks the flow of the process gas to be ionized along the space between the right side wall 142 and the second electrode 162, and the third baffle plate 173 blocks the flow of the process gas to be ionized along the space between the first inner wall 146 and the second electrode 162. Furthermore, because the first baffle plate 171 is inclined, the process gas to be ionized flows more easily between the first baffle plate 171 and the second electrode 162. Therefore, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the second baffle plate 172 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since both the second baffle plate 172 and the third baffle plate 173 are inclined toward the right wall 142, the portion of the second electrode 162 exposed in the ionization chamber 140 on the left side of the second baffle plate 172 and the third baffle plate 173 is larger than the portion located in the vacuum chamber 145, thereby expanding the ionization region of the second electrode 162 within the ionization chamber 140. Moreover, since part of the second electrode 162 is located in the ionization chamber 140 and the other part is located in the vacuum chamber 145, the second electrode 162 generates an electric field only in the ionization chamber 140 on the left side of the second baffle plate 172 and the third baffle plate 173, and does not generate an electric field in the vacuum chamber 145. As a result, all of the electric field generated by the second electrode 162 is used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0052] Furthermore, as shown in Figure 2(e), based on the sixth embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions, and since the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on approximately the same arc as the first gas hole 144, the distance between the additional gas supply pipe 180 and the multiple substrates is approximately equal to the distance between the first gas hole 144 and the multiple substrates.

[0053] (Ninth Embodiment) As shown in Figure 3(a), in the ninth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0054] The only differences between this embodiment and the fifth embodiment are the position of the second electrode 162 and the number of baffle plates. In the fifth embodiment, the second electrode 162 and the second inner wall 143 are connected to the second baffle plate 172, and the third baffle plate 173 is connected between the second electrode 162 and the first inner wall 146. Furthermore, the right side of the second baffle plate 172 and the third baffle plate 173, and the right side wall 142 of the ionization chamber 140 form the vacuum chamber 145. In this embodiment, the second electrode 162 is positioned on the right side wall 142, and the second baffle plate 172 and the third baffle plate 173 are omitted. The second electrode 162 is partially positioned inside the ionization chamber 140 and partially positioned outside the ionization chamber 140. In this embodiment, the second electrode 162 is partially positioned inside the ionization chamber 140 and also partially positioned inside the reaction chamber 130.

[0055] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. As a result, the process gas must pass through the ionization region between the first electrode 161 and the second electrode 162, and the flow path between the first baffle plate 171 and the right side wall 142 of the ionization chamber 140, before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since part of the second electrode 162 is located outside the ionization chamber 140, the second electrode 162 generates an electric field only inside the ionization chamber 140 and does not generate an electric field outside the ionization chamber 140. Therefore, all of the electric field generated by the second electrode 162 is used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0056] Furthermore, as shown in Figure 3(b), the first baffle plate 171 may be omitted based on the ninth embodiment.

[0057] As shown in Figure 3(c), based on the ninth embodiment, adjustments may be made so that only the gas supply pipe 150 lies on the vertical line connecting the first electrode 161 and the second electrode 162.

[0058] As shown in Figure 3(d), based on the ninth embodiment, the gas supply pipe 150 may be positioned on a line perpendicular to the line connecting the first electrode 161 and the second electrode 162, and adjusted to be outside the radial range of the process pipe 120. The process pipe 120 may be configured to have a convex groove structure 121 for installing the gas supply pipe 150 along its axial direction, which increases the distance between the gas supply pipe 150 and the first gas hole 144, increases the time the process gas passes through the first electrode 161 and the second electrode 162, and ensures sufficient ionization time for the process gas.

[0059] As shown in Figure 3(e), based on the ninth embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions, and since the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on approximately the same arc as the first gas hole 144, the distance between the additional gas supply pipe 180 and the multiple substrates is approximately equal to the distance between the first gas hole 144 and the multiple substrates.

[0060] (Tenth embodiment) As shown in Figure 4(a), in the tenth embodiment of the present invention, the internal structure of the ionization chamber 140 and the positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140 are further defined based on the overall structure of the furnace tube 100.

[0061] The only difference between this embodiment and the ninth embodiment is the structure of the right side wall 142. In the ninth embodiment, the right side wall 142 is parallel to the left side wall 141. In this embodiment, the connection position between the right side wall 142 and the first inner wall 146 is offset away from the left side wall 141, and the connection position between the right side wall 142 and the second inner wall 143 is also offset away from the left side wall 141. As a result, the upper end of the right side wall 142 forms an acute angle with the first inner wall 146, and the lower end of the right side wall 142 forms an acute angle with the second inner wall 143.

[0062] In this embodiment, the first baffle plate 171 blocks the flow of the ionized process gas along the space between the second inner wall 143 and the first electrode 161. Therefore, the ionized process gas must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the right side wall 142 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Since both ends of the right side wall 142 are inclined away from the left side wall 141, the portion of the second electrode 162 exposed in the ionization chamber 140 on the left side of the right side wall 142 is larger than the portion located outside the ionization chamber 140, thereby expanding the ionization region of the second electrode 162 within the ionization chamber 140. Furthermore, since a portion of the second electrode 162 is located outside the ionization chamber 140, the second electrode 162 generates an electric field only within the ionization chamber 140 located to the left of the right side wall 142, and does not generate an electric field outside the ionization chamber 140. Therefore, all of the electric field generated by the second electrode 162 is used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0063] (11th embodiment) As shown in Figure 4(b), in the 11th embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0064] The only difference between this embodiment and the ninth embodiment is the position of the first baffle plate 171. In the ninth embodiment, the first baffle plate 171 is perpendicular to the second inner wall 143. In this embodiment, the connection position between the first baffle plate 171 and the second inner wall 143 is offset in the direction toward the left wall 141, so the first baffle plate 171 forms an acute angle with the second inner wall 143.

[0065] In this embodiment, the first baffle plate 171 blocks the flow of the ionized process gas along the space between the second inner wall 143 and the first electrode 161. Furthermore, because the first baffle plate 171 is inclined, the ionized process gas supplied from the gas supply pipe 150 can easily flow between the first electrode 161 and the first inner wall 146. Therefore, before the ionized process gas is introduced into the reaction chamber 130 through the first gas hole 144, it must pass through the ionization region between the first electrode 161 and the second electrode 162, and the flow path between the first baffle plate 171 and the right side wall 142 of the ionization chamber 140. In addition, because the first baffle plate 171 is inclined, the ionization region between the right side of the first electrode 161 and the second electrode 162 is expanded, thereby improving the ionization efficiency of the process gas. Furthermore, since a portion of the second electrode 162 is located outside the ionization chamber 140, the second electrode 162 generates an electric field only within the ionization chamber 140 and does not generate an electric field outside the ionization chamber 140. As a result, all of the electric field generated by the second electrode 162 is used for ionizing the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0066] (12th embodiment) As shown in Figure 4(c), in the twelfth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0067] The only difference between this embodiment and the tenth embodiment is the position of the first baffle plate 171. In the tenth embodiment, the first baffle plate 171 is perpendicular to the second inner wall 143. In this embodiment, the connection position between the first baffle plate 171 and the second inner wall 143 is offset in the direction toward the left wall 141, so the first baffle plate 171 forms an acute angle with the second inner wall 143.

[0068] In this embodiment, the first baffle plate 171 blocks the flow of the process gas to be ionized along the space between the second inner wall 143 and the first electrode 161. In this embodiment, because the first baffle plate 171 is inclined, the process gas to be ionized supplied from the gas supply pipe 150 can easily flow between the first electrode 161 and the first inner wall 146. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the first baffle plate 171 and the right side wall 142 of the ionization chamber 140 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. In this embodiment, since both ends of the right side wall 142 are inclined away from the left side wall 141, the portion of the second electrode 162 exposed in the ionization chamber 140 on the left side of the right side wall 142 is larger than the portion located outside the ionization chamber 140, thereby expanding the ionization region of the second electrode 162 within the ionization chamber 140. In this embodiment, since a portion of the second electrode 162 is located outside the ionization chamber 140, the second electrode 162 generates an electric field only within the ionization chamber 140 on the left side of the right side wall 142, and does not generate an electric field outside the ionization chamber 140. As a result, all of the electric field generated by the second electrode 162 is used for the ionization of the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0069] As shown in Figure 4(d), based on the tenth embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions, and since the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on approximately the same arc as the first gas hole 144, the distance between the additional gas supply pipe 180 and the multiple substrates is approximately equal to the distance between the first gas hole 144 and the multiple substrates.

[0070] (13th Embodiment) As shown in Figure 5(a), in the thirteenth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0071] The only difference between this embodiment and the first embodiment is the relative positions of the gas supply pipe 150, the first electrode 161, and the second electrode 162. In the first embodiment, the gas supply pipe 150 is positioned close to the left wall 141, the first electrode 161 is positioned at an intermediate position between the left wall 141 and the right wall 142, and the second electrode 162 is positioned close to the right wall 142. In this embodiment, the gas supply pipe 150 is positioned close to the first inner wall 146, the first electrode 161 is positioned close to the left wall 141, and the second electrode 162 is positioned close to the right wall 142. The gas supply pipe 150 and the first gas hole 144 are positioned on a vertical line connecting the first electrode 161 and the second electrode 162.

[0072] In this embodiment, the first baffle plate 171 blocks the flow of process gas to be ionized along the space between the second inner wall 143 located to the left of the first gas hole 144 and the first electrode 161, and the second baffle plate 172 blocks the flow of process gas to be ionized along the space between the second inner wall 143 located to the right of the first gas hole 144 and the second electrode 162. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162, and the flow path between the first baffle plate 171 and the second baffle plate 172, before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas.

[0073] Furthermore, as shown in Figure 5(b), based on the 13th embodiment, the inner tube 110 may be omitted and a single-tube type furnace tube may be adopted.

[0074] As shown in Figure 5(c), based on the 13th embodiment, the gas supply pipe 150 may be positioned outside the radial range of the process pipe 120, and the convex groove structure 121 for installing the gas supply pipe 150 may be appropriately positioned on the process pipe 120 along its axial direction. This increases the distance between the gas supply pipe 150 and the first gas hole 144, improving the degree of ionization of the process gas.

[0075] As shown in Figure 5(d), based on the 13th embodiment, the first baffle plate 171 may be adjusted to be located between the first electrode 161 and the first inner wall 146 located to the left of the gas supply pipe 150, and the second baffle plate 172 may be adjusted to be located between the second electrode 162 and the first inner wall 146 located to the right of the gas supply pipe 150.

[0076] As shown in Figure 5(e), based on the 13th embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions. The additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on an arc substantially identical to that of the first gas hole 144, and the distance from the additional gas supply pipe 180 to the multiple substrates is substantially equal to the distance from the first gas hole 144 to the multiple substrates.

[0077] As shown in Figure 6(a), based on the 13th embodiment, the first baffle plate 171 may be adjusted to be located between the first electrode 161 and the first inner wall 146 located to the left of the gas supply pipe 150.

[0078] As shown in Figure 6(b), the first baffle plate 171 may be omitted based on the 13th embodiment.

[0079] As shown in Figure 6(c), based on the 13th embodiment, the second baffle plate 172 may be omitted, and the first baffle plate 171 may be adjusted to be located between the first electrode 161 and the first inner wall 146 located to the left of the gas supply pipe 150.

[0080] As shown in Figure 6(d), based on the 13th embodiment, the first baffle plate 171 may be adjusted to be between the first electrode 161 and the first inner wall 146 located to the left of the gas supply pipe 150, and the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140. The additional gas supply pipe 180 is located near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the location of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other locations, and the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on an arc substantially identical to that of the first gas hole 144.

[0081] (14th Embodiment) As shown in Figure 7(a), in the fourteenth embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0082] The only difference between this embodiment and the 13th embodiment is the arrangement of the first electrode 161 and the second electrode 162. In the 13th embodiment, the first electrode 161 is positioned close to the left wall 141, and the second electrode 162 is positioned close to the right wall 142. The gas supply pipe 150 and the first gas hole 144 are located on a vertical line connecting the first electrode 161 and the second electrode 162. The first baffle plate 171 is provided between the second inner wall 143, located to the left of the first gas hole 144, and the first electrode 161, and the second baffle plate 172 is provided between the second inner wall 143, located to the right of the first gas hole 144, and the second electrode 162. In this embodiment, the first baffle plate 171 and the second baffle plate 172 are omitted, the first electrode 161 is positioned on the left wall 141, and the second electrode 162 is positioned on the right wall 142. The opposing sides of the first electrode 161 and the second electrode 162 are located inside the ionization chamber 140, while the opposite sides are located outside the ionization chamber 140.

[0083] In this embodiment, both the gas supply pipe 150 and the first gas hole 144 are located on a line perpendicular to the line connecting the first electrode 161 and the second electrode 162, and both the gas supply pipe 150 and the first gas hole 144 are located between the left wall 141 and the right wall 142. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the left wall 141 and the right wall 142 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. In this embodiment, since parts of the first electrode 161 and the second electrode 162 are located outside the ionization chamber 140, the first electrode 161 and the second electrode 162 generate an electric field only inside the ionization chamber 140 and do not generate an electric field outside the ionization chamber 140. As a result, the electric fields generated by the first electrode 161 and the second electrode 162 are all used for ionizing the process gas and are not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0084] (15th Embodiment) As shown in Figure 7(b), in the 15th embodiment of the present invention, this embodiment further defines the internal structure of the ionization chamber 140 and the arrangement positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140, based on the overall structure of the furnace tube 100.

[0085] The only difference between this embodiment and the 14th embodiment is the structure of the left wall 141 and the right wall 142. In the 14th embodiment, the left wall 141 and the right wall 142 are parallel. In this embodiment, the left wall 141 located between the first electrode 161 and the second inner wall 143 is parallel to the right wall 142 located between the second electrode 162 and the second inner wall 143, while the left wall 141 located between the first electrode 161 and the first inner wall 146, and the right wall 142 located between the second electrode 162 and the first inner wall 146, are inclined in opposite directions. In other words, the distance between the portions of the left wall 141 and the right wall 142 located between the electrode and the first inner wall 146 gradually increases, while the portions located between the electrode and the second inner wall 143 are parallel to each other.

[0086] In this embodiment, both the gas supply pipe 150 and the first gas hole 144 are located on a line perpendicular to the line connecting the first electrode 161 and the second electrode 162, and both the gas supply pipe 150 and the first gas hole 144 are located between the left wall 141 and the right wall 142. As a result, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 and the flow path between the left wall 141 and the right wall 142 before being introduced into the reaction chamber 130 through the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, because the left wall 141 and the right wall 142 are inclined in opposite directions along the same end, the portions of the first electrode 161 and the second electrode 162 exposed inside the ionization chamber 140 are larger than the portions located outside the ionization chamber 140, thereby expanding the ionization region of the first electrode 161 and the second electrode 162 inside the ionization chamber 140. In this embodiment, since a portion of the first electrode 161 and the second electrode 162 are positioned outside the ionization chamber 140, the first electrode 161 and the second electrode 162 generate an electric field only within the ionization chamber 140 and do not generate an electric field outside the ionization chamber 140. As a result, all of the electric field generated by the first electrode 161 and the second electrode 162 is used for ionizing the process gas and is not absorbed by the inner wall of the ionization chamber 140, contributing to power saving.

[0087] Furthermore, as shown in Figure 7(c), based on the 15th embodiment, only the structure of the left wall 141 and the right wall 142 may be changed. The left wall 141 located between the first electrode 161 and the second inner wall 143 and the right wall 142 located between the second electrode 162 and the second inner wall 143 are inclined in opposite directions, and the left wall 141 located between the first electrode 161 and the first inner wall 146 is parallel to the right wall 142 located between the second electrode 162 and the first inner wall 146.

[0088] As shown in Figure 7(d), based on the 15th embodiment, only the structure of the left wall 141 and the right wall 142 may be changed. The left wall 141 located between the first electrode 161 and the second inner wall 143 and the right wall 142 located between the second electrode 162 and the second inner wall 143 may be inclined in opposite directions, and the left wall 141 located between the first electrode 161 and the first inner wall 146 and the right wall 142 located between the second electrode 162 and the first inner wall 146 may also be inclined in opposite directions. As a result, the distance between the first electrode 161 and the second electrode 162 may be smaller than the distance between any two points on the left wall 141 and the right wall 142.

[0089] As shown in Figure 7(e), based on the 14th embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions, and since the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on approximately the same arc as the first gas hole 144, the distance between the additional gas supply pipe 180 and the multiple substrates is approximately equal to the distance between the first gas hole 144 and the multiple substrates.

[0090] (16th Embodiment) As shown in Figure 8(a), in the sixteenth embodiment of the present invention, the internal structure of the ionization chamber 140 and the positions of the first electrode 161, the second electrode 162, and the gas supply pipe 150 within the ionization chamber 140 are further defined based on the overall structure of the furnace tube 100.

[0091] The only difference between this embodiment and the 13th embodiment is the number of baffle plates. In the 13th embodiment, the baffle plates include a first baffle plate 171 positioned between the first electrode 161 and the second inner wall 143 located to the left of the first gas hole 144, and a second baffle plate 172 positioned between the second electrode 162 and the second inner wall 143 located to the right of the first gas hole 144. In this embodiment, a third baffle plate 173 and a fourth baffle plate 174 are added, with the third baffle plate 173 provided between the first electrode 161 and the first inner wall 146 located to the left of the gas supply pipe 150, and the fourth baffle plate 174 provided between the second electrode 162 and the first inner wall 146 located to the right of the gas supply pipe 150. The left vacuum chamber 1451 is formed between the left sides of the first baffle plate 171 and the third baffle plate 173 and the left wall 141, and the right vacuum chamber 1452 is formed between the right sides of the second baffle plate 172 and the fourth baffle plate 174 and the right wall 142. The vacuum levels of the left vacuum chamber 1451 and the right vacuum chamber 1452 can be controlled independently. The left side of the first electrode 161 is located in the left vacuum chamber 1451, and the right side of the first electrode 161 is located in the ionization region. The right side of the second electrode 162 is located in the right vacuum chamber 1452, and the left side of the second electrode 162 is located in the ionization region.

[0092] In this embodiment, the lifting mechanism lifts a wafer boat carrying multiple substrates into the reaction chamber 130, and the process gas to be ionized is introduced into the ionization chamber 140 via the gas supply pipe 150 and the second gas hole 151. In the ionization chamber 140, the process gas to be ionized flows along the space between the third baffle plate 173 and the fourth baffle plate 174 and the space between the first baffle plate 171 and the second baffle plate 172. Therefore, the process gas to be ionized must pass through the ionization region between the first electrode 161 and the second electrode 162 before being introduced into the reaction chamber 130 via the first gas hole 144, thereby improving the ionization efficiency of the process gas. Furthermore, since a portion of the first electrode 161 is located in the left vacuum chamber 1451 and a portion of the second electrode 162 is located in the right vacuum chamber 1452, the first electrode 161 and the second electrode 162 generate an electric field only within the opposing ionization chamber 140, and do not generate an electric field in the left vacuum chamber 1451 and the right vacuum chamber 1452. As a result, all the electric fields generated by the first electrode 161 and the second electrode 162 are used for ionizing the process gas and are not absorbed by the inner wall of the ionization chamber 140, contributing to power saving. The ionized process gas is introduced into the reaction chamber 130 through each first gas hole 144 and supplied uniformly to each substrate mounted on the wafer boat. When the gas in the reaction chamber 130 is replaced or discharged, the existing gas in the reaction chamber 130 is first pumped into the suction chamber 112 through a plurality of third gas holes 111, and then exhausted from the process tube 120 by the exhaust pipe 113.

[0093] Furthermore, as shown in Figure 8(b), based on the 16th embodiment, the inner tube 110 may be fixed to the left wall 141 and the right wall 142 of the ionization chamber 140, and the additional gas supply pipe 180 is positioned near the ionization chamber 140 and close to the inner wall of the inner tube 110. The radius of the inner tube 110 at the position of the additional gas supply pipe 180 is larger than the radius of the inner tube 110 at other positions, and since the additional gas supply pipe 180 is located inside the inner tube 110 and is positioned on approximately the same arc as the first gas hole 144, the distance between the additional gas supply pipe 180 and the multiple substrates is approximately equal to the distance between the first gas hole 144 and the multiple substrates.

[0094] It should be noted that the embodiments described above can be freely combined as needed. The above are merely preferred embodiments of the present invention, and those skilled in the art can make various improvements and modifications without departing from the spirit of the invention. These improvements and modifications should also be interpreted as being within the scope of protection of the present invention.

Claims

1. A furnace tube for plasma-enhanced thin film deposition, The process tube includes a reaction chamber capable of accommodating multiple substrates, and at least one ionization chamber arranged along the stacking direction of the multiple substrates, wherein the ionization chamber has a plurality of first gas holes communicating with the reaction chamber, A gas supply tube located within the ionization chamber and having a plurality of second gas holes arranged sequentially along the stacking direction of the plurality of substrates, the gas supply tube is used to introduce a process gas to be ionized, the process gas to be ionized is introduced into the ionization chamber through the second gas holes, and after being ionized in the ionization chamber, the ionized process gas is introduced into the reaction chamber through the first gas holes, thereby forming a thin film corresponding to the surface of the substrates. The process tube and the ionization chamber are located at an intermediate position and arranged along the stacking direction of the plurality of substrates, comprising a first electrode and a second electrode, A plasma-enhanced thin-film deposition furnace tube characterized in that the first electrode and / or the second electrode are supported by baffle plates, one end of each baffle plate is connected to the corresponding electrode, and the other end of each baffle plate is connected to the inner wall of the ionization chamber, thereby improving the ionization efficiency of the process gas to be ionized by passing it between the first electrode and the second electrode, and the first gas hole is located on a line perpendicular to the line connecting the first electrode and the second electrode.

2. The aforementioned process tube is An inner tube configured within the process tube, formed in a concentric structure with the process tube, and the plurality of substrates further comprises an inner tube arranged within the inner tube, The plasma-enhanced thin film deposition furnace tube according to claim 1, characterized in that the radial distance between the first gas hole and the inner wall of the process tube is greater than or equal to the radial distance between the inner tube and the inner wall of the process tube.

3. The plasma-enhanced thin-film deposition furnace tube according to claim 1, characterized in that an exhaust pipe corresponding to the ionization chamber is provided on the side wall of the process tube.

4. The plasma-enhanced thin-film deposition furnace tube according to claim 1, characterized in that the gas supply pipe is located on the same side as the first electrode and the second electrode.

5. The plasma-enhanced thin-film deposition furnace tube according to claim 1, characterized in that the gas supply pipe is located on a line perpendicular to the line connecting the first electrode and the second electrode.

6. A portion of the inner wall of the process tube constitutes the first inner wall of the ionization chamber, and the ionization chamber further comprises a left wall, a right wall, and a second inner wall opposite the first inner wall, with one end on the same side of the left wall and the right wall of the ionization chamber connected to the first inner wall, and the other ends of the left wall and the right wall connected to the second inner wall, thereby forming a hollow ionization chamber along the axial direction of the process tube. The plasma-enhanced thin film deposition furnace tube according to claim 4, characterized in that the first electrode and the second electrode are arranged sequentially on the same arc, and the arc is located at an intermediate position between the first inner wall and the second inner wall.

7. A portion of the inner wall of the process tube constitutes the first inner wall of the ionization chamber, and the ionization chamber further comprises a left wall, a right wall, and a second inner wall opposite the first inner wall, with one end on the same side of the left wall and the right wall of the ionization chamber connected to the first inner wall, and the other ends of the left wall and the right wall connected to the second inner wall, thereby forming a hollow ionization chamber along the axial direction of the process tube. The plasma-enhanced thin film deposition furnace tube according to claim 5, characterized in that the first electrode and the second electrode are arranged sequentially on the same arc, the arc is located midway between the first inner wall and the second inner wall, the gas supply pipe is located close to the inner wall of the process tube, and both the gas supply pipe and the first gas hole are located on a line perpendicular to the line connecting the first electrode and the second electrode.

8. The plasma-enhanced thin film deposition furnace tube according to claim 7, characterized in that the gas supply pipe is located outside the radius of the process tube, and the process tube has a convex groove structure along its axial direction for accommodating the gas supply pipe.

9. The first baffle plate is connected between the first electrode and the second inner wall, The second baffle plate is connected between the second electrode and the second inner wall, the right side wall, or the first inner wall. The plasma-enhanced thin film deposition furnace tube according to claim 6, characterized in that the first gas hole is located between the first baffle plate and the second baffle plate.

10. The first baffle plate and the second baffle plate are arranged parallel to each other and perpendicular to the second inner wall, or The first baffle plate is perpendicular to the second inner wall, and the second baffle plate forms an acute angle with the right side wall, or The plasma-enhanced thin-film deposition furnace tube according to claim 9, characterized in that the first baffle plate forms an acute angle with the second inner wall, and the second baffle plate forms an acute angle with the right side wall.

11. The first baffle plate is connected between the first electrode and the second inner wall, The second baffle plate is connected between the second electrode and the second inner wall, The third baffle plate is connected between the second electrode and the right side wall or the first inner wall. The vacuum chamber is provided between the second baffle plate and the third baffle plate and the right side wall, A portion of the second electrode is located on the side of the second baffle plate and the third baffle plate that is close to the first electrode, and the other portion of the second electrode is located inside the vacuum chamber. The plasma-enhanced thin film deposition furnace tube according to claim 6, characterized in that the first gas hole is located between the first baffle plate and the second baffle plate.

12. The plasma-enhanced thin film deposition furnace tube according to claim 11, characterized in that the vacuum level in the vacuum chamber is independently controlled.

13. The first baffle plate and the second baffle plate are arranged parallel to each other and perpendicular to the second inner wall, and the third baffle plate and the second baffle plate are arranged on the same straight line, or The first baffle plate is perpendicular to the second inner wall, and the second baffle plate and the third baffle plate each form an acute angle with the right side wall, or The first baffle plate forms an acute angle with the second inner wall, the second baffle plate is perpendicular to the second inner wall, and the third baffle plate and the second baffle plate are arranged on the same straight line, or The plasma-enhanced thin-film deposition furnace tube according to claim 11, characterized in that the first baffle plate forms an acute angle with the second inner wall, and the second baffle plate and the third baffle plate each form an acute angle with the right side wall.

14. The first baffle plate is connected between the first electrode and the second inner wall or the first inner wall. The second baffle plate is connected between the second electrode and the second inner wall or the first inner wall. The plasma-enhanced thin film deposition furnace tube according to claim 7, characterized in that the first gas hole is arranged between the first baffle plate and the second baffle plate.

15. The first baffle plate is connected between the first electrode and the second inner wall, The fourth baffle plate is connected between the first electrode and the first inner wall, The left-side vacuum chamber is provided between the first baffle plate and the fourth baffle plate and the left-side wall. A portion of the first electrode is located on the side of the first baffle plate and the fourth baffle plate that is close to the second electrode, and the other portion of the first electrode is located inside the left-side vacuum chamber. The second baffle plate is connected between the second electrode and the second inner wall, The third baffle plate is connected between the second electrode and the first inner wall, The right-side vacuum chamber is provided between the second baffle plate and the third baffle plate and the right-side wall. A portion of the second electrode is located on the side of the second baffle plate and the third baffle plate that is close to the first electrode, and the other portion of the second electrode is located within the right-side vacuum chamber. The plasma-enhanced thin film deposition furnace tube according to claim 7, characterized in that the first gas hole is located between the first baffle plate and the second baffle plate, and the gas supply pipe is located between the fourth baffle plate and the third baffle plate.

16. The plasma-enhanced thin film deposition furnace tube according to claim 15, characterized in that the vacuum levels in the left vacuum chamber and the right vacuum chamber are controlled independently.

17. The plasma-enhanced thin film deposition furnace tube according to claim 1, characterized in that the ratio of the flow area of ​​the gas supply pipe to the second gas hole is in the range of 1:(0.21 to 0.48).

18. A furnace tube for plasma-enhanced thin film deposition, The process tube includes a reaction chamber capable of accommodating multiple substrates, and at least one ionization chamber arranged along the stacking direction of the multiple substrates, wherein the ionization chamber has a plurality of first gas holes communicating with the reaction chamber, A gas supply tube located within the ionization chamber and having a plurality of second gas holes arranged sequentially along the stacking direction of the plurality of substrates, the gas supply tube is used to introduce a process gas to be ionized, the process gas to be ionized is introduced into the ionization chamber through the second gas holes, and after being ionized in the ionization chamber, the ionized process gas is introduced into the reaction chamber through the first gas holes, thereby forming a thin film corresponding to the surface of the substrates. A first electrode and a second electrode are arranged within the process tube and along the stacking direction of the plurality of substrates, wherein the first electrode and / or the second electrode are located on the side wall of the ionization chamber, and a portion of the electrode located on the side wall of the ionization chamber is located inside the ionization chamber, and the remaining portion of the electrode is located outside the ionization chamber. A plasma-enhanced thin-film deposition furnace tube characterized by having the following features.

19. The aforementioned process tube is An inner tube configured within the process tube, formed in a concentric structure with the process tube, and the plurality of substrates further comprises an inner tube arranged within the inner tube, The plasma-enhanced thin film deposition furnace tube according to claim 18, characterized in that the radial distance between the first gas hole and the inner wall of the process tube is greater than or equal to the radial distance between the inner tube and the inner wall of the process tube.

20. The plasma-enhanced thin film deposition furnace tube according to claim 19, characterized in that an exhaust pipe corresponding to the ionization chamber is provided on the side wall of the process tube.

21. The first electrode is positioned in the middle of the ionization chamber, and the second electrode is positioned on the side wall of the ionization chamber, with a portion of the second electrode located inside the ionization chamber and the other portion of the second electrode located outside the ionization chamber. The plasma-enhanced thin film deposition furnace tube according to claim 18, characterized in that the first electrode is supported by a baffle plate, one end of the baffle plate is connected to the first electrode and the other end is connected to the inner wall of the ionization chamber, so that the process gas to be ionized passes between the first electrode and the second electrode, thereby improving the ionization efficiency of the process gas, and the first gas hole is located on a line perpendicular to the line connecting the first electrode and the second electrode.

22. The first electrode is positioned on the left wall of the ionization chamber, and the second electrode is positioned on the right wall of the ionization chamber, and the first electrode and the second electrode are configured such that a portion of them is located inside the ionization chamber and the other portion is located outside the ionization chamber. The plasma-enhanced thin film deposition furnace tube according to claim 18, characterized in that both the gas supply pipe and the first gas hole are positioned perpendicular to the line connecting the first electrode and the second electrode, and the gas supply pipe is positioned close to the inner wall of the process tube so that the process gas supplied from the gas supply pipe passes between the first electrode and the second electrode, thereby improving the ionization efficiency of the process gas.

23. The plasma-enhanced thin film deposition furnace tube according to claim 21, characterized in that the gas supply pipe is located on the side of the first electrode away from the second electrode.

24. The plasma-enhanced thin film deposition furnace tube according to claim 21, characterized in that the gas supply pipe is located on a line perpendicular to the line connecting the first electrode and the second electrode.

25. A portion of the inner wall of the process tube constitutes the first inner wall of the ionization chamber, and the ionization chamber further comprises a left wall, a right wall, and a second inner wall opposite the first inner wall, with one end on the same side of the left wall and the right wall of the ionization chamber connected to the first inner wall, and the other ends of the left wall and the right wall connected to the second inner wall, thereby forming a hollow ionization chamber along the axial direction of the process tube. The plasma-enhanced thin film deposition furnace tube according to claim 23, characterized in that the first electrode and the second electrode are arranged sequentially on the same arc, the arc is located at an intermediate position between the second inner wall and the first inner wall, and the second electrode is located on the right side wall.

26. A portion of the inner wall of the process tube constitutes the first inner wall of the ionization chamber, and the ionization chamber further includes a left wall, a right wall, and a second inner wall facing the first inner wall, and one end on the same side of the left wall and the right wall of the ionization chamber is connected to the first inner wall, and the other ends of the left wall and the right wall are connected to the second inner wall, thereby forming a hollow ionization chamber along the axial direction of the process tube. The plasma-enhanced thin film deposition furnace tube according to claim 24, characterized in that the first electrode and the second electrode are arranged sequentially on the same arc, the arc is located midway between the second inner wall and the first inner wall, the gas supply pipe is located close to the first inner wall, and both the gas supply pipe and the first gas hole are located perpendicular to the line connecting the first electrode and the second electrode.

27. The plasma-enhanced thin film deposition furnace tube according to claim 26, characterized in that the gas supply pipe is located outside the radius of the process tube, and the process tube has a convex groove structure along its axial direction for accommodating the gas supply pipe.

28. The baffle plate is connected between the first electrode and the second inner wall, and the baffle plate is positioned perpendicular to the second inner wall or at an acute angle with the second inner wall, and the first gas hole is located between the baffle plate and the right side wall. The plasma-enhanced thin-film deposition furnace tube according to claim 25, characterized in that the right side wall is parallel to the baffle plate, or a portion of the right side wall located between the second electrode and the first inner wall forms an acute angle with the inner wall of the process tube, and a portion of the right side wall located between the second electrode and the second inner wall forms an acute angle with the second inner wall.

29. A portion of the inner wall of the process tube constitutes the first inner wall of the ionization chamber, and the ionization chamber further includes the left wall, the right wall, and a second inner wall facing the first inner wall, and one end on the same side of the left wall and the right wall of the ionization chamber is connected to the first inner wall, and the other ends of the left wall and the right wall are connected to the second inner wall, thereby forming a hollow ionization chamber along the axial direction of the process tube. The plasma-enhanced thin film deposition furnace tube according to claim 22, characterized in that the first electrode and the second electrode are arranged sequentially on the same arc, the arc is located at an intermediate position between the second inner wall and the first inner wall, the gas supply pipe is located close to the inner wall of the process tube, and both the gas supply pipe and the first gas hole are located on a line perpendicular to the line connecting the first electrode and the second electrode.

30. The left wall and the right wall are parallel to each other, or The portions of the left and right walls located between the first and second electrodes and the first inner wall are inclined in opposite directions, and the portions located between the first and second electrodes and the second inner wall are parallel to each other, or The portions of the left and right walls located between the first and second electrodes and the first inner wall are parallel to each other, and the portions located between the first and second electrodes and the second inner wall are inclined in opposite directions, or The plasma-enhanced thin film deposition furnace tube according to claim 29, characterized in that the portions of the left wall and the right wall located between the first electrode and the second electrode and the first inner wall, and the portions located between the first electrode and the second electrode and the second inner wall, are all inclined in opposite directions to each other.

31. The plasma-enhanced thin film deposition furnace tube according to claim 1, characterized in that the ratio of the flow area of ​​the gas supply pipe to the second gas hole is in the range of 1:(0.21 to 0.48).

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