Vaporizer for substrate processing apparatus and substrate processing apparatus

Abstract

The present invention relates to a vaporizer for a substrate processing apparatus and a substrate processing apparatus, comprising: a first inlet for supplying a liquid or solid precursor and a first carrier gas; a diffusion section including a diffusion space wider than the first inlet for diffusing the precursor within the diffusion space; a second inlet connected to the diffusion section for supplying a second carrier gas to assist in the diffusion of the precursor; and a vaporization section communicating with the diffusion section for vaporizing the diffused precursor.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing steps on a substrate, such as a vapor deposition step and an etching step.

Background Art

[0002] Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this purpose, processing steps for the substrate are performed, such as a vapor deposition step of depositing a thin film of a specific substance on the substrate, a photolithography step of selectively exposing the thin film using a photosensitive substance, and an etching step of removing the thin film of the selectively exposed portion to form a pattern. Such processing steps for the substrate can be performed by a substrate processing apparatus.

[0003] A substrate processing apparatus according to the prior art includes a substrate processing unit that performs a processing step on a substrate, and a supply unit that supplies source gas to the substrate processing unit. The supply unit includes a vaporizer that vaporizes a precursor. After generating source gas by vaporizing the precursor using the vaporizer, the supply unit supplies the source gas to the substrate processing unit. The substrate processing unit performs a processing step using the source gas supplied from the supply unit.

[0004] In a substrate processing apparatus according to the prior art, the vaporizer vaporized the precursor by simultaneously mixing it with a vaporization assisting carrier gas and providing heat energy. As a result, there is a problem that clogging occurs due to an increase in viscosity caused by heat generated during the vaporization process of the precursor in the past, and the supply of source gas cannot be smoothly performed. Such a problem becomes more serious when using a high-viscosity precursor.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention was devised to solve the problems described above, and aims to provide a vaporizer for a substrate processing apparatus and a substrate processing apparatus that can prevent clogging from occurring due to an increase in viscosity during the vaporization process of the precursor. [Means for solving the problem]

[0006] To solve the problems described above, the present invention may include the following configuration.

[0007] The vaporizer for a substrate processing apparatus according to the present invention is for vaporizing a liquid or solid precursor onto a substrate and supplying it as a gas, and may include a first inlet into which the precursor and a first carrier gas are supplied, a diffusion section which includes a diffusion space wider than the first inlet and diffuses the precursor within the diffusion space, a second inlet connected to the diffusion section and supplied with a second carrier gas that assists in the diffusion of the precursor, and a vaporization section which communicates with the diffusion section and vaporizes the diffused precursor.

[0008] In the vaporizer for a substrate processing apparatus according to the present invention, the diffusion unit may include a cooling unit for cooling the diffusion space.

[0009] In the vaporizer for substrate processing apparatus according to the present invention, the diffusion section can be controlled to a first temperature. The vaporization section can be controlled to a second temperature. The first temperature may be lower than the second temperature.

[0010] The substrate processing apparatus according to the present invention may include a supply unit for supplying a source gas, and a substrate processing unit for performing processing steps on a substrate using the source gas supplied from the supply unit. The supply unit may include a first inlet for supplying a precursor and a first carrier gas, a diffusion unit including a diffusion space wider than the first inlet for diffusing the precursor within the diffusion space, a second inlet connected to the diffusion unit for supplying a second carrier gas to assist in the diffusion of the precursor, and a vaporization unit communicating with the diffusion unit for vaporizing the diffused precursor.

[0011] In the substrate processing apparatus according to the present invention, the diffusion unit may include a cooling unit for cooling the diffusion space.

[0012] In the substrate processing apparatus according to the present invention, the diffusion section can be controlled to a first temperature. The vaporization section can be controlled to a second temperature. The first temperature may be lower than the second temperature. [Effects of the Invention]

[0013] According to the present invention, the following effects can be obtained.

[0014] This invention can prevent clogging caused by increased viscosity during the vaporization process of the precursor. This allows the invention to improve the stability of the precursor vaporization and the supply of the source gas.

[0015] This invention prevents clogging from occurring even when a high-viscosity precursor is vaporized to generate a source gas, making it possible to perform the processing step using a high-viscosity precursor. Therefore, this invention can improve the quality of the substrate after the processing step.

[0016] This invention prevents clogging even when a high-viscosity precursor is vaporized to generate the source gas. This not only extends the maintenance cycle due to clogging but also reduces maintenance costs. Therefore, this invention can reduce the process cost for the processing steps, contributing to a reduction in the manufacturing cost of processed substrates. Furthermore, this invention can increase the productivity of processed substrates through increased operating rates.

[0017] The present invention prevents clogging even when generating the source gas using a high-viscosity precursor, and by increasing the flow rate of the precursor supplied to the vaporization section, the amount of source gas generated can be increased. As a result, the present invention can increase the flow rate of the source gas supplied to the substrate processing section, thereby further improving the quality of the processed substrate. Furthermore, the present invention can shorten the time required for the processing process, thereby further improving the productivity of the processed substrate. [Brief explanation of the drawing]

[0018] [Figure 1] This is a schematic diagram of the substrate processing apparatus according to the present invention. [Figure 2] This is a schematic side cross-sectional view of a vaporizer for a substrate processing apparatus according to the present invention. [Figure 3] This is a schematic side cross-sectional view showing an enlarged view of the first inlet and the second inlet in the substrate processing apparatus according to the present invention. [Figure 4] This is a schematic side cross-sectional view of the injection section in the substrate processing apparatus according to the present invention. [Figure 5] This is a schematic side cross-sectional view of a modified embodiment of the injection section in the substrate processing apparatus according to the present invention. [Modes for carrying out the invention]

[0019] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. Since the vaporizer for the substrate processing apparatus according to the present invention can be included in the substrate processing apparatus according to the present invention, it will be described together while describing the embodiments of the substrate processing apparatus according to the present invention.

[0020] Referring to FIG. 1, the substrate processing apparatus 1 according to the present invention performs a processing step on a substrate (S). The substrate (S) can be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform processing steps such as a deposition step of depositing a thin film on the substrate (S) and an etching step of removing a part of the thin film deposited on the substrate (S). Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition step will be described as a reference, but it will be obvious to those skilled in the art to which the present invention belongs to derive embodiments in which the substrate processing apparatus 1 according to the present invention performs different processing steps such as the etching step.

[0021] The substrate processing apparatus 1 according to the present invention can include a supply unit 2 that supplies gas and a substrate processing unit 7 that performs the processing step using the gas supplied from the supply unit 2.

[0022] Referring to FIGS. 1 and 2, the supply unit 2 supplies gas to the substrate processing unit 7. The supply unit 2 can be connected to the substrate processing unit 7 via a pipe, a hose, a hole of a gas block, etc. The supply unit 2 can be disposed outside the substrate processing unit 7.

[0023] The supply unit 2 can supply source gas to the substrate processing unit 7. In this case, the supply unit 2 can include the diffusion unit 3, the vaporization unit 4, and the inflow unit 5. The diffusion unit 3, the vaporization unit 4, and the inflow unit 5 can be embodied as a vaporizer for the substrate processing apparatus according to the present invention.

[0024] The supply unit 2 vaporizes a liquid phase or solid precursor and supplies it onto the substrate (S) as a gas. The supply unit 2 can generate the source gas by vaporizing the liquid phase or solid precursor. The precursor contains a source substance and can be in a liquid or solid state. After generating the source gas by vaporizing the liquid or solid precursor, the supply unit 2 can supply the gaseous source gas to the substrate processing unit 7.

[0025] Referring to Figures 1 and 2, the diffusion section 3 diffuses the precursor supplied from the inlet section 5. The diffusion section 3 can be connected to the inlet section 5. The inlet section 5 can supply the precursor and a first carrier gas, in which case the diffusion section 3 can diffuse the precursor and the first carrier gas supplied from the inlet section 5. The first carrier gas is for transporting the precursor and may include, for example, an inert gas. The inlet section 5 can supply both the precursor and the first carrier gas to the diffusion section 3, and can also supply a second carrier gas to the diffusion section 3. In this case, the diffusion section 3 can diffuse the precursor, the first carrier gas, and the second carrier gas supplied from the inlet section 5. The second carrier gas assists in the diffusion of the precursor. The second carrier gas assists in the diffusion of the precursor and can also assist in the flow of the source gas. The second carrier gas may include an inert gas. For example, the second carrier gas may be argon (Ar). In the diffusion section 3, the precursor and the second carrier gas can mix with each other while diffusing. The second carrier gas may also be a vaporization assist gas that assists in the vaporization of the precursor.

[0026] In the diffusion section 3, the precursor and the second carrier gas can be diffused at a lower temperature than the vaporization section 4. For example, the precursor and the second carrier gas can be diffused in the diffusion section 3 at a first temperature, and then vaporized by thermal energy in the vaporization section 4 at a second temperature to produce the source gas. In this case, the first temperature may be lower than the second temperature. The diffusion section 3 can be controlled to the first temperature. The vaporization section can be controlled to the second temperature.

[0027] Thus, the substrate processing apparatus 1 according to the present invention is implemented such that the source gas is generated when the precursor and the second carrier gas are diffused at a relatively low temperature in the diffusion section 3, and then vaporized at a relatively high temperature in the vaporization section 4. In other words, the substrate processing apparatus 1 according to the present invention is implemented such that the diffusion of the precursor and vaporization by thermal energy occur sequentially in spaces that are separated from each other. As a result, the substrate processing apparatus 1 according to the present invention can reduce the increase in viscosity that occurs during the vaporization of the precursor, and thus can prevent clogging due to the increase in viscosity. Therefore, the substrate processing apparatus 1 according to the present invention is implemented so that the vaporization of the precursor and the supply of the source gas are smooth. As a result, the substrate processing apparatus 1 according to the present invention can achieve the following effects.

[0028] Firstly, the substrate processing apparatus 1 according to the present invention can prevent clogging even when a high-viscosity precursor is vaporized to generate the source gas, making it possible to perform the processing step using a high-viscosity precursor. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality of the substrate (S) on which the processing step has been performed. For example, the substrate processing apparatus 1 according to the present invention can generate the source gas using a precursor with a viscosity higher than 10 cP (Centi Poise), and perform the processing step using the generated source gas.

[0029] Secondly, the substrate processing apparatus 1 according to the present invention can prevent clogging even when a high-viscosity precursor is vaporized to generate the source gas. This not only extends the maintenance cycle due to clogging but also reduces maintenance costs. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the process cost for the processing step, thus contributing to lowering the manufacturing cost of the processed substrate (S). Furthermore, the substrate processing apparatus 1 according to the present invention can increase the productivity of the processed substrate (S) by increasing the operating rate.

[0030] Thirdly, the substrate processing apparatus 1 according to the present invention can prevent clogging even when the source gas is generated using a high-viscosity precursor. Therefore, by increasing the flow rate of the precursor supplied to the diffusion unit 3, the amount of source gas generated can be increased. As a result, the substrate processing apparatus 1 according to the present invention can increase the flow rate of the source gas supplied to the substrate processing unit 7, thereby further improving the quality of the substrate (S) that has undergone the processing step. Furthermore, the substrate processing apparatus 1 according to the present invention can shorten the time required for the processing step, thereby further increasing the productivity of the substrate (S) that has undergone the processing step.

[0031] Referring to Figures 1 and 2, the diffusion section 3 may include a diffusion space 30.

[0032] In the diffusion space 30, the precursor can be diffused. The diffusion space 30 can be formed to be wider than the first inlet 51 of the inlet 5. The first inlet 51 supplies the precursor and the first carrier gas. Since the diffusion space 30 is formed to be wider than the first inlet 51, the precursor and the first carrier gas can diffuse widely as they are supplied from the first inlet 51 to the diffusion space 30. As a result, in the diffusion space 30, the precursor can diffuse widely and mix smoothly with the second carrier gas.

[0033] Referring to Figures 1 and 2, the diffusion unit 3 may include a diffusion body 31.

[0034] The diffusion body 31 provides the diffusion space 30. The diffusion body 31 can be adjusted to the first temperature. Therefore, the diffusion and mixing of the precursor and the second carrier gas in the diffusion space 30 can be performed at the first temperature. The first temperature can be a temperature range in which vaporization of the precursor due to heat does not occur and condensation of the precursor does not occur in the diffusion space 30. The first temperature can be set in advance by an operator after prior testing or the like. As a result, the substrate processing apparatus 1 according to the present invention can reduce the increase in viscosity during the diffusion of the precursor and the second carrier gas in the diffusion space 30, thereby preventing clogging due to an increase in viscosity.

[0035] The diffusion body 31 can be formed in a cylindrical shape with an empty interior, but is not limited to this. It can also be formed in a different shape, such as a rectangular parallelepiped with an empty interior, as long as it can provide the diffusion space 30 through which the precursor and the second carrier gas can diffuse.

[0036] Referring to Figures 1 and 2, the diffusion section 3 may include a cooling section 32.

[0037] The cooling unit 32 is coupled to the diffusion body 31. The cooling unit 32 can cool the diffusion space 30. As a result, even if heat generated during the vaporization process by thermal energy in the vaporization unit 4 is transferred to the diffusion unit 3, the cooling unit 32 can prevent vaporization by thermal energy from occurring in the diffusion space 30 by cooling the diffusion space 30. Therefore, the cooling unit 32 can reduce the increase in viscosity that occurs during the diffusion and mixing of the precursor and the second carrier gas in the diffusion space 30. By cooling the diffusion space 30, the cooling unit 32 can maintain the diffusion space 30 at the first temperature.

[0038] The cooling unit 32 may include a heat sink 32a. The heat sink 32a can be coupled to the outer surface of the diffusion body 31. This allows the heat sink 32a to cool the diffusion space 30 by dissipating the heat generated in the diffusion unit 3 and the heat transferred from the vaporization unit 4. The heat sink 32a may have an air cooling path. The heat sink 32a can be coupled to the entire outer surface of the diffusion body 31. This allows the heat sink 32a to prevent the precursor located in the diffusion space 30 from vaporizing due to heat before it reaches the vaporization unit 4.

[0039] Referring to Figures 1 and 2, the vaporization unit 4 vaporizes the precursor using thermal energy. The vaporization unit 4 can communicate with the diffusion unit 3. As a result, the precursor diffused in the diffusion unit 3 can be supplied to the vaporization unit 4 and vaporized by thermal energy. The vaporization unit 4 can perform thermal vaporization at a higher temperature than the diffusion unit 3. For example, the precursor and the second carrier gas can be diffused in the diffusion unit 3 at the first temperature, and then vaporized by thermal energy in the vaporization unit 4 at the second temperature to produce the source gas. In this case, the second temperature may be higher than the first temperature.

[0040] Thus, the substrate processing apparatus 1 according to the present invention can be implemented such that after the diffusion of the precursor in the diffusion section 3, the vaporization of the precursor by thermal energy is carried out in the vaporization section 4. Therefore, the substrate processing apparatus 1 according to the present invention can reduce the increase in viscosity that occurs during the vaporization of the precursor, and can prevent clogging caused by the increase in viscosity. As a result, the substrate processing apparatus 1 according to the present invention is implemented so that the vaporization of the precursor and the supply of the source gas are carried out smoothly.

[0041] The vaporization unit 4 may include a vaporization body 41 and a heating unit 42.

[0042] The vaporization unit 41 provides a vaporization space 40. In the vaporization space 40, the precursor can be vaporized by thermal energy. The source gas can be generated in the vaporization space 40 by the vaporization of the precursor. The vaporization of the precursor can be carried out when the vaporization space 40 is at the second temperature. The second temperature can be a temperature range in which the precursor is vaporized by heat in the vaporization space 40. The second temperature can be set in advance by the operator after prior testing or the like.

[0043] The vaporization body 41 can be coupled to the diffusion body 31. In this case, the vaporization space 40 and the diffusion space 30 can be connected to each other. The vaporization body 41 and the diffusion body 31 can also be formed as a single unit. The vaporization body 41 can be formed in a cylindrical shape with an overall hollow interior, but is not limited to this, and can be formed in a different shape, such as a rectangular parallelepiped with an empty interior, as long as it can provide the vaporization space 40 in which the precircer is vaporized.

[0044] The heating unit 42 is coupled to the vaporization body 41. The heating unit 42 can heat the vaporization space 40. By heating the vaporization space 40 and providing thermal energy, the heating unit 42 can cause the precursor to vaporize in the vaporization space 40 due to heat. By heating the vaporization space 40, the heating unit 42 can maintain the vaporization space 40 at the second temperature.

[0045] The heating unit 42 may include a first heater 322a.

[0046] The first heater 322a is positioned on the side wall of the vaporization body 41. The first heater 322a can heat the vaporization space 40 by radiating heat from the side wall of the vaporization body 41. The first heater 322a can be positioned to surround the vaporization space 40. In this way, the first heater 322a can heat the vaporization space 40 to a uniform temperature by dissipating heat uniformly throughout the vaporization space 40. The first heater 322a can also be positioned to be embedded in the side wall of the vaporization body 41. The first heater 322a can heat the vaporization space 40 through methods such as generating heat using electricity, emitting heated light, or circulating a heating medium.

[0047] The second heater 322b is located inside the vaporization body 41 in the vaporization space 40. The second heater 322b can heat the vaporization space 40 by emitting heat in the vaporization space 40. As a result, the vaporization space 40 can be heated by the first heater 322a located on the outside and the second heater 322b located on the inside. Therefore, the heating unit 42 can improve the quality of the source gas vaporized by thermal energy by improving the uniformity of the temperature of the vaporization space 40. The second heater 322b can heat the vaporization space 40 through methods such as generating heat using electricity, emitting heated light, and circulating a heating medium.

[0048] The second heater 322b can be positioned in the center of the vaporization space 40. Therefore, the second heater 322b can be positioned to dissipate heat uniformly throughout the vaporization space 40. For example, if the vaporization space 40 is formed in a cylindrical shape, the second heater 322b can be positioned on an imaginary line connecting the centers of the circles forming the bottom and top surfaces of the cylinder. The second heater 322b can be positioned with one side connected to the bottom surface of the vaporization body 41 and the other side spaced away from the bottom surface of the vaporization body 41. The other side of the second heater 322b can be positioned away from the top surface of the vaporization body 41. The top surface of the vaporization body 41 may be a portion connected to the diffusion body 31. This allows the vaporization body 41 to be positioned so as not to obstruct the inflow of the diffused precursor from the diffusion body 31. The other side of the second heater 322b can be positioned such that it is at a shorter distance from the top surface of the vaporization body 41 than the bottom surface of the vaporization body 41a.

[0049] The supply unit 2 may include a discharge unit 10. The discharge unit 10 can be coupled to the vaporization body 41. One side of the discharge unit 10 can communicate with the vaporization space 40. The other side of the discharge unit 10 can be connected to the substrate processing unit 7. As a result, the source gas generated by the vaporization of the precursor in the vaporization space 40 can be supplied to the substrate processing unit 7 via the discharge unit 10. The other side of the discharge unit 10 can be connected to the substrate processing unit 7 via piping, hoses, holes in a gas block, etc.

[0050] Referring to Figures 1 to 3, the inlet 5 supplies the precursor, the first carrier gas, and the second carrier gas to the diffusion section 3. The inlet 5 can be coupled to the diffusion section 3. In the diffusion section 3, the precursor and the second carrier gas diffuse at a lower temperature than the vaporization section 4, thereby reducing the increase in viscosity. Therefore, the inlet 5 can supply a high-viscosity precursor to the diffusion section 3.

[0051] The inlet 5 can be connected to the diffusion body 31 so as to communicate with the diffusion space 30. The diffusion body 31 can be positioned between the inlet 5 and the vaporization body 41. When the vaporization body 41 is connected to the lower part of the diffusion body 31, the inlet 5 can be connected to the upper part of the diffusion body 31.

[0052] The inlet 5 may include the first inlet 51 and the second inlet 52.

[0053] The first inlet 51 can be supplied with the precursor and the first carrier gas. The diffusion section 3 can be supplied with the precursor and the first carrier gas via the first inlet 51. The diffusion section 3 may include a diffusion space 30 that is wider than the first inlet 51. Therefore, the substrate processing apparatus 1 according to the present invention can further increase the diffusion force of the precursor in the diffusion section 3. In this case, the mixing ratio between the precursor and the second carrier gas in the diffusion section 3 can be increased.

[0054] The first inlet 51 can be connected to a first supply mechanism 21. The first supply mechanism 21 supplies the precursor and the first carrier gas. The first supply mechanism 21 can be connected to the first inlet 51 via piping, hoses, holes in a gas block, etc. Although not shown in the figure, the first supply mechanism 21 may include a first storage tank for storing the precursor, a first pump for supplying the first carrier gas to the first storage tank, a first valve for selectively supplying the precursor, and the like.

[0055] The first inlet 51 can supply a precursor with a viscosity higher than 10 cP to the diffusion section 3. Even when a precursor with a viscosity higher than 10 cP is supplied by the first inlet 51, the substrate processing apparatus 1 according to the present invention can prevent clogging by reducing the increase in viscosity that occurs during the vaporization process of the precursor, so that the source gas generated using the high-viscosity precursor can be smoothly supplied to the substrate processing section 7. Therefore, the substrate processing apparatus 1 according to the present invention can smoothly carry out the processing step using a high-viscosity precursor, which not only further improves the quality of the substrate that has undergone the processing step, but also further increases the productivity of the substrate that has undergone the processing step by shortening the time required for the processing step.

[0056] The second inlet 52 can be supplied with the second carrier gas. The diffusion section 3 can be supplied with the second carrier gas via the second inlet 52. The second inlet 52 can be connected to a second supply mechanism 22. The second supply mechanism 22 supplies the second carrier gas. The second supply mechanism 22 can be connected to the second inlet 52 via piping, hoses, holes in the gas block, etc. Although not shown in the figure, the second supply mechanism 22 may include a second storage tank for storing the second carrier gas, a second pump for supplying the second carrier gas stored in the second storage tank, a second valve for selectively supplying the second carrier gas, and the like.

[0057] The inlet section 5 may include a first nozzle body 53 and a second nozzle body 54.

[0058] The first nozzle body 53 is for supplying the precursor and the first carrier gas to the diffusion section 3. The first nozzle body 53 may include a first supply hole 531. The precursor and the first carrier gas supplied from the first supply mechanism 21 can be supplied to the diffusion space 30 through the first supply hole 531. The first supply hole 531 and the first nozzle body 53 may be included in the first inlet section 51.

[0059] The second nozzle body 54 is positioned outside the first nozzle body 53 and at a distance from it. The second nozzle body 54 can be positioned outside the first nozzle body 53 and surround it. The space created by the distance between the second nozzle body 54 and the first nozzle body 53 can be realized by the second supply hole 541. The second carrier gas can be supplied to the diffusion section 3 through the second supply hole 541. In this case, the second carrier gas can be supplied from the second supply mechanism 22 to the inlet 5 and then supplied to the diffusion space 30 through the second supply hole 541. As a result, the second carrier gas supplied through the second supply hole 541 and the precursor supplied through the first supply hole 531 can be mixed while diffusing in the diffusion space 30. In this case, by embodiing the second supply hole 541 and the first supply hole 531 so as to be spatially separated from each other, the second carrier gas can be prevented from mixing with the precursor and the first carrier gas until it is supplied to the diffusion space 30. The second supply hole 541 and the second nozzle body 54 can be included in the second inlet 52.

[0060] Referring to Figures 1 and 2, the supply unit 2 may include a communication nozzle 6.

[0061] The communication nozzle 6 is positioned between the diffusion section 3 and the vaporization section 4. The communication nozzle 6 can partition the diffusion space 30 and the vaporization space 40. This allows the diffusion of the precursor and the vaporization of the precursor to be carried out in separate spaces. The communication nozzle 6 can be positioned inside the diffusion body 31 and the vaporization body 41. The communication nozzle 6 can be positioned on the bonding surface where the diffusion body 31 and the vaporization body 41 are joined together.

[0062] The communication nozzle 6 may include a plurality of first communication holes 61, a plurality of second communication holes 62, and a communication space 63.

[0063] The first communication hole 61 communicates with the diffusion space 30. The first communication hole 61 can be formed by penetrating the communication body 60. The communication body 60 forms the overall appearance of the communication nozzle 6. The communication body 60 is located inside the diffusion body 31 and the vaporization body 41 and can partition the diffusion space 30 and the vaporization space 40. The first communication hole 61 can be formed by penetrating one surface of the communication body 60 facing the diffusion space 30. The first communication holes 61 can be arranged spaced apart from each other.

[0064] The second communication hole 62 communicates with the vaporization space 40. The second communication hole 62 can be formed by penetrating the communication body 60. The second communication hole 62 can be formed by penetrating the other side of the communication body 60 facing the vaporization space 40. The second communication holes 62 can be arranged to be spaced apart from each other.

[0065] The communication space 63 is positioned between the first communication hole 61 and the second communication hole 62. The communication space 63 can correspond to the internal space of the communication body 60. The communication space 63 can communicate with the diffusion space 30 via the first communication hole 61 and with the vaporization space 40 via the second communication hole 62. As a result, the precursor and the second carrier gas can be primarily diffused by the diffusion section 3 and then secondarily diffused by the communication nozzle 6 and supplied to the vaporization space 40. Therefore, the communication nozzle 6 can ensure that the precursor that has been primarily diffused in the diffusion space 30 is supplied to the vaporization space 40 without solidifying. This is because, as the primarily diffused precursor passes through the communication nozzle 6, the particles are separated to diameters corresponding to the respective diameters of the first communication hole 61 and the second communication hole 62. The diameters of the first communication hole 61 and the second communication hole 62 can be formed to be smaller than the diameter of the primary diffused precursor particles. Therefore, the substrate processing apparatus 1 according to the present invention can further reduce the diameter of the precursor particles supplied to the vaporization space 40 using the communication nozzle 6, thereby enabling smoother vaporization of the precursor in the vaporization space 40.

[0066] Referring to Figures 1 to 5, the substrate processing unit 7 performs the processing step using the source gas supplied from the supply unit 2. The substrate processing unit 7 can be connected to the vaporization unit 4 and receive the source gas from the vaporization unit 4. The substrate processing unit 7 may include a chamber 71, a substrate support unit 72, and an injection unit 73.

[0067] The chamber 71 provides a processing space 70. The processing steps can be carried out in the processing space 70. The processing space 70 can be located inside the chamber 71. An exhaust port (not shown) for exhausting gas from the processing space 70 can be connected to the chamber 71. The substrate support section 72 and the injection section 73 can be located inside the chamber 71.

[0068] The substrate support portion 72 supports the substrate (S). The substrate support portion 72 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported by the substrate support portion 72, processing steps can be performed on multiple substrates (S) at once. The substrate support portion 72 can be coupled to the chamber 71. The substrate support portion 72 can be placed inside the chamber 71.

[0069] The injection unit 73 injects gas toward the substrate support unit 72. The injection unit 73 can be connected to the supply unit 2. In this case, the injection unit 73 can inject the gas supplied from the supply unit 2 toward the substrate support unit 72. The injection unit 73 can be placed inside the chamber 71. The injection unit 73 can be placed opposite the substrate support unit 72. The injection unit 73 can be placed above the substrate support unit 72. The processing space 70 can be placed between the injection unit 73 and the substrate support unit 72. The injection unit 73 can be coupled to a lid (not shown). The lid can be coupled to the chamber 71 so as to cover the upper part of the chamber 71.

[0070] The injection unit 73 may include a first gas passage 73a and a second gas passage 73b.

[0071] The first gas passage 73a is for injecting gas. One side of the first gas passage 73a can be connected to the supply unit 2 via piping, a hose, a hole in a gas block, etc. The other side of the first gas passage 73a can communicate with the processing space 70. As a result, the first gas supplied from the supply unit 2 can flow along the first gas passage 73a and then be injected into the processing space 70 through the first gas passage 73a. The first gas passage 73a functions as a passage for gas flow and can also function as an injection port for injecting gas into the processing space 70.

[0072] The second gas passage 73b is for injecting the second gas. The second gas and the first gas can be different gases. For example, if the first gas is the source gas, the second gas can be a reactant gas. One side of the second gas passage 73b can be connected to the supply unit 2 via piping, a hose, a hole in a gas block, etc. The other side of the second gas passage 73b can communicate with the processing space 70. As a result, the second gas supplied from the supply unit 2 can flow along the second gas passage 73b and then be injected into the processing space 70 through the second gas passage 73b. The second gas passage 73b can function as a passage for the flow of the second gas and as an injection port for injecting the second gas into the processing space 70.

[0073] On the other hand, if the first gas is the source gas, the first gas passage 73a can be connected to the vaporization unit 4. If the second gas is a reactant gas, the second gas passage 73b can be connected to the third supply mechanism 23 of the supply unit 2. The third supply mechanism 23 can be connected to the second gas passage 73b via piping, hoses, holes in the gas block, etc. Although not shown in the figure, the third supply mechanism 23 may include a third storage tank for storing the reactant gas, a third pump for supplying the reactant gas stored in the third storage tank, a third valve for selectively supplying the reactant gas, and the like.

[0074] The second gas channel 73b and the first gas channel 73a can be arranged to be spatially separated from each other. This allows the second gas supplied from the supply unit 2 to the second gas channel 73b to be injected into the processing space 70 without passing through the first gas channel 73a. The first gas supplied from the supply unit 2 to the first gas channel 73a can be injected into the processing space 70 without passing through the second gas channel 73b. The second gas channel 73b and the first gas channel 73a can inject gas toward different parts of the processing space 70.

[0075] For example, as shown in Figure 2, the injection unit 73 may include a first plate 731 and a second plate 732.

[0076] The first plate 731 is positioned above the second plate 732. The first plate 731 and the second plate 732 can be positioned spaced apart from each other. The first plate 731 can have a plurality of first gas holes 731a formed therein. Each of the first gas holes 731a can function as a passage for the flow of the first gas. Each of the first gas holes 731a can belong to the first gas flow path 73a. The first plate 731 can have a plurality of second gas holes 731b formed therein. Each of the second gas holes 731b can function as a passage for the flow of the second gas. Each of the second gas holes 731b can belong to the second gas flow path 73b. The first plate 731 can have a plurality of protruding members 731c attached thereto. Each of the protruding members 731c can protrude from the lower surface of the first plate 731 toward the second plate 732. Each of the first gas holes 731a can be formed to penetrate the first plate 731 and the protruding member 731c. Although not shown in the figure, the lower surface of the first plate 731 can also be formed flat without the protruding member 731c.

[0077] Multiple openings 732a can be formed in the second plate 732. The openings 732a can be formed through the second plate 732. The openings 732a can be positioned corresponding to each of the protruding members 731c. As a result, as shown in Figure 2, the protruding members 731c can be formed to a length that allows them to be inserted into each of the openings 732a. Although not shown in the figure, the protruding members 731c can also be formed to a length that allows them to be positioned above each of the openings 732a. The protruding members 731c can also be formed to a length that protrudes below the second plate 732. The second gas hole 731b can be positioned to inject gas toward the upper surface of the second plate 732.

[0078] The injection unit 73 can generate plasma using the second plate 732 and the first plate 731. In this case, a plasma power source such as RF power is applied to the first plate 731, and the second plate 732 can be grounded. Alternatively, the first plate 731 can be grounded and the plasma power source applied to the second plate 732.

[0079] As shown in Figure 3, the second plate 732 can also have a plurality of first openings 732b and a plurality of second openings 732c formed therein.

[0080] The first opening 732b can be formed through the second plate 732. The first opening 732b can be connected to each of the first gas holes 731a. In this case, the protruding member 731c can be positioned to contact the upper surface of the second plate 732. The first gas can be injected into the processing space 70 through the first gas holes 731a and the first opening 732b. The first gas holes 731a and the first opening 732b can belong to the first gas flow path 73a.

[0081] The second opening 732c can be formed through the second plate 732. The second opening 732c can be connected to a buffer space 733 located between the first plate 731 and the second plate 732. The second gas can be injected into the processing space 70 through the second gas hole 731b, the buffer space 733, and the second opening 732c. The second gas hole 731b, the buffer space 733, and the second opening 732c can belong to the second gas flow path 73b.

[0082] The present invention described above is not limited to the embodiments and accompanying figures, and it will be apparent to those with ordinary skill in the art to which the present invention pertains that various substitutions, modifications, and changes are possible without departing from the technical spirit of the present invention.

Claims

1. A vaporizer for a substrate processing apparatus, which vaporizes a liquid or solid precursor and supplies it as a gas onto a substrate, The precursor and the first inlet supplying the first carrier gas, A diffusion section that includes a diffusion space wider than the first inlet and diffuses the precursor within the diffusion space, A second inlet connected to the diffusion section to supply a second carrier gas that assists in the diffusion of the precursor, and It includes a vaporization section that communicates with the diffusion section and vaporizes the diffused precursor, A vaporizer for a substrate processing apparatus, characterized in that the diffusion section includes a cooling section for cooling the diffusion space.

2. The diffusion section includes a diffusion body that provides the diffusion space through which the precursor and the second carrier gas diffuse. The vaporization apparatus for a substrate processing apparatus according to claim 1, characterized in that the cooling unit is coupled to the diffusion body and cools the diffusion space such that vaporization of the precursor is blocked in the diffusion space.

3. A vaporizer for a substrate processing apparatus, which vaporizes a liquid or solid precursor and supplies it as a gas onto a substrate, The precursor and the first inlet supplying the first carrier gas, A diffusion section that includes a diffusion space wider than the first inlet and diffuses the precursor within the diffusion space, A second inlet connected to the diffusion section to supply a second carrier gas that assists in the diffusion of the precursor, and It includes a vaporization section that communicates with the diffusion section and vaporizes the diffused precursor, The diffusion section is controlled to a first temperature, The vaporization section is controlled to a second temperature. A vaporizer for a substrate processing apparatus, characterized in that the first temperature is lower than the second temperature.

4. The diffusion unit includes a diffusion body that provides the diffusion space for diffusing the precursor and the second carrier gas, and a cooling unit coupled to the diffusion body. The vaporizer for a substrate processing apparatus according to claim 3, characterized in that the cooling unit cools the diffusion space such that vaporization of the precursor is blocked in the diffusion space.

5. The vaporizer for a substrate processing apparatus according to claim 4, characterized in that the cooling section includes a heat dissipation plate bonded to the outer surface of the diffusion body.

6. The vaporization unit includes a vaporization body that provides a vaporization space in which vaporization by thermal energy takes place, and a heating unit coupled to the vaporization body. The vaporization apparatus for a substrate processing apparatus according to claim 1 or 3, characterized in that the heating unit heats the vaporization space and provides thermal energy.

7. The vaporization apparatus for a substrate processing apparatus according to claim 6, characterized in that the heating section includes a first heater arranged on the side wall of the vaporization body and a second heater arranged in the vaporization space inside the vaporization body.

8. It includes a communication nozzle positioned between the diffusion section and the vaporization section, which divides the diffusion space and the vaporization space of the vaporization section. The communicating nozzle includes a plurality of first communicating holes communicating with the diffusion space, a plurality of second communicating holes communicating with the vaporization space, and a communicating space disposed between the first communicating holes and the second communicating holes. The vaporizer for a substrate processing apparatus according to claim 1 or 3, characterized in that the precursor is supplied to the vaporization space via the communication space in the diffusion space.

9. The first inlet includes a first nozzle body having a first supply hole formed therein for supplying the precursor to the diffusion section, The second inlet includes a second nozzle body positioned outside the first nozzle body and separated from the first nozzle body. The vaporizer for a substrate processing apparatus according to claim 1, characterized in that the second carrier gas is supplied to the diffusion section through a second supply hole between the first nozzle body and the second nozzle body.

10. A supply unit that supplies source gas, and The substrate processing unit includes a substrate processing unit that performs a processing step on the substrate using the source gas supplied from the supply unit, The aforementioned supply unit, A first inlet that supplies a precursor and a first carrier gas, A diffusion section that includes a diffusion space wider than the first inlet and diffuses the precursor within the diffusion space, A second inlet connected to the diffusion section to supply a second carrier gas that assists in the diffusion of the precursor, and It includes a vaporization section that communicates with the diffusion section and vaporizes the diffused precursor, A substrate processing apparatus characterized in that the diffusion section includes a cooling section for cooling the diffusion space.

11. A supply unit that supplies source gas, and The substrate processing unit includes a substrate processing unit that performs a processing step on the substrate using the source gas supplied from the supply unit, The aforementioned supply unit, A first inlet that supplies a precursor and a first carrier gas, A diffusion section that includes a diffusion space wider than the first inlet and diffuses the precursor within the diffusion space, A second inlet connected to the diffusion section to supply a second carrier gas that assists in the diffusion of the precursor, and It includes a vaporization section that communicates with the diffusion section and vaporizes the diffused precursor, The diffusion section is controlled to a first temperature. The vaporization section is controlled to a second temperature. A substrate processing apparatus characterized in that the first temperature is lower than the second temperature.

12. The substrate processing apparatus according to claim 11, characterized in that the diffusion section includes a cooling section for cooling the diffusion space.

13. The vaporization unit includes a vaporization body that provides a vaporization space in which vaporization by thermal energy takes place, and a heating unit coupled to the vaporization body. The substrate processing apparatus according to claim 10 or 11, characterized in that the heating unit heats the vaporization space and provides thermal energy.

14. The substrate processing apparatus according to claim 13, characterized in that the heating section includes a first heater disposed on the side wall of the vaporization body and a second heater disposed in the vaporization space inside the vaporization body.

15. The supply unit is positioned between the diffusion unit and the vaporization unit and includes a communication nozzle that divides the diffusion space and the vaporization space of the vaporization unit. The communicating nozzle includes a plurality of first communicating holes communicating with the diffusion space, a plurality of second communicating holes communicating with the vaporization space, and a communicating space disposed between the first communicating holes and the second communicating holes. The substrate processing apparatus according to claim 11 or 12, characterized in that the precursor is supplied to the vaporization space via the communication space in the diffusion space.

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