Superconducting wire manufacturing apparatus and superconducting wire manufacturing method using the same

Abstract

The present invention relates to a superconducting wire manufacturing apparatus and manufacturing method, and is characterized by including a supply unit for supplying a wire on which a buffer layer has been formed, a deposition unit for depositing a superconducting layer onto the wire supplied from the supply unit, a deposition assist unit provided in the deposition unit for assisting the surface reaction of the wire, and a winding unit for winding up the wire on which the superconducting layer has been deposited in the deposition unit.

Description

Technical Field

[0001] The present invention relates to a superconducting wire manufacturing apparatus and a superconducting wire manufacturing method using the same. More specifically, the present invention relates to a superconducting wire manufacturing apparatus capable of manufacturing high-quality superconducting wires by accelerating epitaxial growth by applying remote plasma to metal-organic chemical vapor deposition, and a superconducting wire manufacturing method using the same.

Background Art

[0002] A superconductor refers to a substance that has zero electrical resistance at a temperature below the critical temperature (Tc) and exhibits perfect diamagnetism called the Meissner effect.

[0003] In the first generation of superconductors, the superconducting phenomenon where the electrical resistance of mercury becomes zero at a temperature of 4.2 K of liquid helium was first discovered in 1911. In the second generation of superconductors, cuprate superconductors were discovered in 1986.

[0004] An oxide superconductor (REBCO: RE is one or two rare earth elements (Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu)) means individual oxide particle substances of RE, Ba, and Cu, or complex oxide particles composed of two or more of these elements.

[0005] In order to apply the REBCO thin film superconductor to the power transmission field, a process that enables long wire formation while maintaining a high critical current density (Jc) and has a low manufacturing cost must be applied. Therefore, various processes are applied for the buffer layer and the superconducting layer thin film.

[0006] Buffer layers are produced using methods such as sputtering and deposition. Superconducting layers in high-temperature superconducting wires can be manufactured through methods such as pulsed laser deposition (PLD), reactive co-evaporation (REC), metal-organic chemical vapor deposition (MOCVD), and metal-organic evaporation (MOD).

[0007] Among these methods, organometallic vapor deposition (MOCVD) refers to a chemical vapor deposition method that uses liquid organometallic compound raw materials. Because these compounds are incomplete and easily decomposed, the method involves vaporizing them and causing a gas-phase reaction and a chemical vapor deposition reaction on the surface of the substrate (wire) to obtain a solid vapor-deposited layer.

[0008] This material has the advantages of a dense structure, excellent adhesion to the substrate, and a fast deposition rate, but it has the disadvantage of a slow rate of oriented crystal growth.

[0009] The background art for this invention is disclosed in the Registered Patent Publication No. 10-1429553 of the Republic of Korea (registered on August 6, 2014, title of invention: superconducting wire and method for forming a superconducting wire). [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] The present invention aims to provide a superconducting wire manufacturing apparatus and a superconducting wire manufacturing method utilizing the same, which can produce high-quality superconducting wires by applying remote plasma to organometallic chemical vapor deposition to accelerate epitaxial growth. [Means for solving the problem]

[0011] The superconducting wire manufacturing apparatus according to the present invention may include a supply unit that supplies a wire on which a buffer layer has been formed, a deposition unit that deposits a superconducting layer onto the wire supplied from the supply unit, a deposition assist unit provided in the deposition unit that assists the surface reaction of the wire, and a winding unit that winds up the wire on which the superconducting layer has been deposited in the deposition unit.

[0012] The deposition unit may include a deposition chamber, a guide unit provided in the deposition chamber for guiding the movement of the wire and heating the wire, and an injection unit for injecting an organometallic raw material to deposit a superconducting layer onto the wire guided by the guide unit.

[0013] The guide portion may include a guide drum formed to a length corresponding to the width of the wire and equipped with a heating unit inside.

[0014] The injection unit may include an injection head that is spaced apart from the guide drum and partially surrounds the guide drum, and in which a plurality of fine holes are formed into which an organometallic raw material is injected.

[0015] The guide section may include a conveyor that transports the wire and is equipped with a heating unit inside.

[0016] The deposition assistance unit may include a plasma generating unit provided outside the deposition chamber and a plasma induction unit that diffuses plasma between the guide unit and the injection unit.

[0017] The plasma induction section is formed to correspond to the shape of the guide section, so that the plasma jet direction line and the surface of the wire material are at a uniform distance.

[0018] The plasma induction unit can be positioned so that the distance between the plasma and the wire can be adjusted.

[0019] The front and rear ends of the deposition section may be provided with differential exhaust sections to prevent the remote plasma generated in the plasma induction section from being transferred to the wire.

[0020] It may include a heat treatment unit that heat-treats the wire on which the superconducting layer is deposited and supplied from the vapor deposition unit.

[0021] The method for manufacturing a superconducting wire according to the present invention includes a wire supply step of supplying a wire having a buffer layer formed on a substrate, a superconducting layer formation step of forming a superconducting layer on the supplied wire, and a winding step of winding the wire on which the superconducting layer is deposited. The superconducting layer formation step may include a heating step of heating the supplied wire, and a vapor deposition step of injecting an organometallic raw material onto the heated wire and simultaneously generating remote plasma.

[0022] After the vapor deposition step, a heat treatment step of heat-treating the wire on which the superconducting layer is deposited may be further performed.

Advantages of the Invention

[0023] According to the superconducting wire manufacturing apparatus and the superconducting wire manufacturing method using the same according to the present invention, remote plasma is applied to the metal-organic chemical vapor deposition method to accelerate epitaxial growth, and a high-quality superconducting wire can be manufactured.

[0024] In the present invention, an injection head is formed in a shape corresponding to the guide part, so that uniform injection of the organometallic raw material is possible. The plasma induction part has a shape corresponding to the shape of the guide part for diffusing the plasma, and the plasma is diffused at a uniform distance from the entire surface of the wire. Therefore, the uniform quality and production speed can be greatly improved.

[0025] Since the present invention can adjust the distance between the wire and the plasma induction part, process conditions such as the production speed can be ensured.

[0026] The present invention is provided with a differential exhaust section in the vapor deposition chamber, which can maintain the vapor deposition site in a low-vacuum state, thereby improving the vapor deposition performance. It can prevent the plasma generated between the injection head and the wire from reaching the guide roll and prevent damage to the quality of the wire. Furthermore, the guide roll for guiding the wire is provided with a shield plate, which can prevent damage caused by the plasma passing through the differential exhaust section.

[0027] The present invention is provided with a heat treatment section for heat-treating a wire on which a superconducting layer has been vapor-deposited, and by alleviating the rapid cooling during the transfer of the wire heated during vapor deposition, it is possible to alleviate the stress that may occur on the vapor deposition surface.

Brief Description of the Drawings

[0028] [Figure 1] It is a drawing for explaining the structure of a superconducting wire according to an embodiment of the present invention.

[0029] [Figure 2] It is a drawing schematically showing the configuration of a superconducting wire manufacturing apparatus according to an embodiment of the present invention.

[0030] [Figure 3] It is a perspective view schematically showing the vapor deposition section of a superconducting wire manufacturing apparatus according to an embodiment of the present invention.

[0031] [Figure 4] It is a plan view schematically showing the vapor deposition section of a superconducting wire manufacturing apparatus according to an embodiment of the present invention.

[0032] [Figure 5] It is a drawing schematically showing a modified example of the vapor deposition section of a superconducting wire manufacturing apparatus according to an embodiment of the present invention.

[0033] [Figure 6] It is a plan view schematically showing a modified example of the vapor deposition section of a superconducting wire manufacturing apparatus according to an embodiment of the present invention.

[0034] [Figure 7] This is a cross-sectional view showing the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention.

[0035] [Figure 8] This drawing shows a modified example of the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention.

[0036] [Figure 9] This is a plan view showing a modified example of the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention.

[0037] [Figure 10] This is a drawing showing the shape of a modified pipe in the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention.

[0038] [Figure 11] This is a flowchart illustrating a method for manufacturing a superconducting wire according to one embodiment of the present invention. [Modes for carrying out the invention]

[0039] Hereinafter, embodiments of the superconducting wire manufacturing apparatus and the superconducting wire manufacturing method using the present invention will be described with reference to the attached drawings.

[0040] In this process, the thickness of lines and the size of components shown in the drawings may be exaggerated for clarity and convenience of explanation. The terms described below are defined in consideration of the function of the present invention, and these may change depending on the intent or convention of the user or operator. Therefore, the definitions of such terms should be based on the content throughout this specification.

[0041] In this specification, when a part is described as being "connected" to another part, this includes not only cases where it is "directly connected," but also cases where it is "indirectly connected" with another member in between. In this specification, when a part is described as "containing" a component, this means that it may "contain" other components, unless otherwise stated.

[0042] Throughout this specification, the same reference numeral may refer to the same component. Even if the same or similar reference numeral is not mentioned or described in a particular drawing, that reference numeral may be described based on other drawings. Even if a particular drawing does not show a reference numeral in a portion, that portion may be described based on other drawings. The number, shape, size, and relative differences in size of detailed components included in the drawings of this application are provided for ease of understanding and do not limit the embodiments, and may be embodied in a variety of forms.

[0043] Figure 1 is a diagram illustrating the structure of a superconducting wire according to one embodiment of the present invention; Figure 2 is a diagram schematically showing the configuration of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 3 is a perspective view schematically showing the deposition section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 4 is a plan view schematically showing the deposition section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 5 is a diagram schematically showing a modified example of the deposition section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 6 is a plan view schematically showing a modified example of the deposition section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 7 is a cross-sectional view showing the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 8 is a diagram showing a modified example of the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 9 is a plan view showing a modified example of the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; Figure 10 is a diagram showing the shape of the pipe of a modified example of the injection section of a superconducting wire manufacturing apparatus according to one embodiment of the present invention; and Figure 11 is a flowchart showing a superconducting wire manufacturing method according to one embodiment of the present invention.

[0044] Referring to Figures 1 to 10, the superconducting wire manufacturing apparatus 100 according to one embodiment of the present invention may include a supply unit 110, a deposition unit 120, a deposition assist unit 160, and a winding unit 190.

[0045] First, referring to Figure 1, which is a schematic diagram illustrating the structure of a superconducting wire, it consists of a substrate 10, a buffer layer 20, a superconducting layer 30, and a protective layer 40. The substrate 10 is mainly made of Hastelloy or stainless steel, and its thickness is approximately 50 μm.

[0046] The buffer layer 20 is composed of a diffusion prevention layer 22, a seed layer 24, an IBAD layer 26, a homoepitaxial layer 28, and a strain matching layer 29, and is formed with a total thickness of approximately 1.0 μm.

[0047] The diffusion prevention layer 22 is composed of a metal oxide such as aluminum oxide (Al2O3) and is formed by sputtering. This is to prevent the material components of the substrate 10 from diffusing towards the seed layer 24.

[0048] The seed layer provides a crystal nucleation surface for the IBAD layer 26, allowing a film (Y2O3) to be formed by sputtering.

[0049] The IBAD layer 26 is a buffer layer 20 formed by creating a film (MgO) using the IBAD (Ion Beam Assist Deposition) method. This is the most important step, and as shown in Figure 1, it provides a biaxial (a-axis, c-axis) orientation to the superconducting layer 30, resulting in a biaxial orientation axis with crystalline orientation aligned along the crystal axis both in-plane and out-of-plane of the thin film.

[0050] The homoepitaxial (homo-epi) layer 28 plays a role in improving the biaxial orientation of the IBAD layer 26 and forms a film (MgO) by E-beam deposition, while the strain matching layer 29 plays a role in reducing the lattice mismatch between the magnesium oxide constituting the IBAD layer 26 and the superconducting layer 30 and forms a film (LaMnO3) by sputtering.

[0051] The superconducting wire manufacturing apparatus 100 according to this embodiment deposits a superconducting layer 30 on top of the buffer layer 20. The superconducting layer 30 has the same lattice structure as the crystal structure grown in the IBAD layer 26, and the growing crystal layer can be grown while maintaining the same crystal structure and orientation as the substrate 10.

[0052] The superconducting wire manufacturing apparatus 100 according to this embodiment has a reel-to-reel configuration for the supply unit 110, the deposition unit 120, and the winding unit 190, and they are connected by vacuum.

[0053] The supply unit 110 supplies wire 1 on which a buffer layer 20 is formed, and may include a supply chamber 112 and an unwinding roller 114 provided in the supply chamber 112 from which the wire 1 on which the buffer layer 20 is formed is unwound.

[0054] The wire 1 is wound onto an unwinding roller 114, and the rotation of the unwinding roller 114 allows the wire 1 to be sequentially unwound and supplied to the vapor deposition section 120.

[0055] The deposition unit 120 deposits a superconducting layer 30 onto a wire 1 supplied from the supply unit 110, and may include a deposition chamber 130, a guide unit 140, and a spray unit 150.

[0056] The deposition chamber 130 is connected to the supply chamber 112 by a connecting pipe.

[0057] The guide section 140 is provided in the deposition chamber 130 to guide the movement of the wire 1 and to heat the wire 1. The guide section 140 may consist of a guide drum 142 formed to a length corresponding to the width of the wire 1 and equipped with a heating unit 144 inside.

[0058] Guide rolls 135 may be provided on the front and rear sides of the guide drum 142, respectively, for guiding the wire 1 to the guide drum 142.

[0059] The heating unit 144 is located inside the guide drum 142. By heating the guide drum 142, the wire 1 can be heated to a temperature suitable for depositing the superconducting layer 30. As the heated wire 1 moves along the outer circumference of the guide drum 142, the superconducting layer 30 can be deposited by the injection unit 150 and the deposition assist unit 160, which will be described later.

[0060] The injection unit 150 is used to inject an organometallic raw material in order to deposit a superconducting layer 30 onto the wire 1 guided by the guide unit 140, and includes an injection head 152 that is separated from the guide drum 142 and partially surrounds the guide drum 142, and has a plurality of fine holes 152a into which the organometallic raw material is injected.

[0061] The spray head 152 is connected to an organometallic raw material supply unit 154 located outside the deposition chamber 130.

[0062] The organometallic raw material supply unit 154 is equipped with a vaporizer 155, in which the organometallic raw material is gasified and injected through the fine holes 152a of the injection head 152 toward the heated wire 1.

[0063] A chemical reaction occurs in the space between the outer part of the spray head 152 and the wire 1 wound around the outer circumference of the guide drum 142. The organic matter is decomposed by the heat and discharged to the outside of the deposition chamber 130 through the vacuum pump 132 of the deposition chamber 130, while the remaining metal adheres to the heated wire 1 to form a deposited material.

[0064] More specifically, when the gasified organometallic raw material is injected through the injection head 152, the gas reacts to form a film of Y (Yttrium), B (Barium), and C (Copper) components on the surface of the wire 1.

[0065] As shown in Figures 2 to 4, the injection head 152 according to this embodiment can be formed with a curvature corresponding to the outer circumferential surface of the guide drum 142 and can surround the guide drum 142.

[0066] Although the injection head 152 in this embodiment is shown as a U-shape surrounding the guide drum 142, it is not limited to this and can be formed in various shapes such as planar or circular.

[0067] Referring to Figures 5 and 6, as a modified example of the vapor deposition section 120, the guide section 240 may include a conveyor 242 that transports the wire 1 and has a heating unit 244 inside.

[0068] For example, in the case of the guide drum 142, a wire 1 with a large width dimension, such as a wire 1 with a width of 13 cm, may be used, while in the case of the conveyor 242, a wire 1 with a small width dimension, such as a wire 1 with a width of 4 cm, may be used.

[0069] The heating unit 244 is located below the conveyor 242, and by heating the conveyor 242, it can be heated to a temperature suitable for depositing the superconducting layer 30 onto the wire 1. The superconducting layer 30 can be deposited by providing the spray unit 150 and the deposition assist unit 160 above the conveyor 242.

[0070] At this time, the spray head 152 may be a planar shape positioned above the conveyor 242 so as to correspond to the conveyor 242.

[0071] Referring to Figure 7, the injection head 152 may be supplied in a manner that prevents the gas supplied from the organometallic raw material supply unit 154 from reacting with each other within the injection head 152.

[0072] Referring to Figures 8 and 9, as a modified example of the injection head 252, the injection head 252 may include a base plate 253 and a plurality of supply pipes 244 that supply organometallic raw materials, and a plurality of cooling pipes 245 provided between the supply pipes 244, with the supply pipes 244 located on the upper part of the base plate 253.

[0073] Such supply pipes 244 and cooling pipes 245 may be arranged in a rectangular shape as shown in Figure 9(a), or they may be arranged in a circular shape as shown in Figure 9(b).

[0074] The shapes of the supply pipe 244 and the cooling pipe 245 are not limited to square and circular, but can be formed in a variety of shapes that allow for the smooth supply of organometallic raw materials to the wire 1.

[0075] As shown in Figure 10, the cross-sectional shapes of the supply pipe 244 and the cooling pipe 245 can be formed in various shapes, such as a square as in Figure 10(a) or a circle as in Figure 10(b).

[0076] The deposition assist unit 160 is provided in the deposition unit 120 to assist the surface reaction of the wire 1, and may include a plasma generating unit 162 provided outside the deposition chamber 130 and a plasma induction unit 164 that diffuses plasma between the guide unit 140 and the jet unit 150.

[0077] The plasma generation unit 162 supplies monatomic oxygen (O), ionizing high-purity (99.9999%) diatomic oxygen (O2) with monatomic oxygen (O) and supplying it to the plasma induction unit 164.

[0078] The plasma induction section 164 is formed to correspond to the shape of the guide sections 140 and 240, so that the plasma jet direction line and the surface of the wire 1 are formed at a uniform distance.

[0079] More specifically, the plasma induction unit 164 is located between the guide drum 142 and the injection head 152, is formed in a U-shape along the curvature of the guide drum 142, and is positioned opposite to the direction of travel of the wire 1, so that it can inject monoatomic oxygen (O) supplied by the plasma generation unit 162 in both directions or in one direction.

[0080] Of course, in the modified example, the plasma induction section 164 is formed in a flat plate shape according to the shape of the conveyor 242.

[0081] In this way, the oxygen plasma generated through the plasma generation unit 162 outside the deposition chamber 130 is guided through the plasma induction unit 164 between the injection head 152 and the wire 1 inside the deposition chamber 130, closer to the wire 1.

[0082] Therefore, ultimately, YBa2Cu3O 7-x A (REBCO) film is formed. Growing such a film is called epitaxial growth, and the crystal of the grown wire 1 must have the same lattice structure as the crystal structure grown in the IBAD layer 26. The growing crystal layer can be grown while maintaining the same crystal structure and orientation (a-axis, c-axis) as the wire 1.

[0083] By performing high-quality thin-film epitaxial growth and doping with non-superconducting particles in this way, it is possible to control factors such as increasing the magnitude of the critical current under a magnetic field, simply by adjusting the gas flow rate and the wire temperature.

[0084] The plasma induction unit 164 can be positioned so that the distance between the remote plasma and the wire 1 can be adjusted.

[0085] This can be achieved by a separate length adjustment means (not shown) for the plasma induction section 164. That is, the position of the plasma induction section 164 can be varied by motor-driven gear operation or cylinder, thereby adjusting the distance between the plasma diffused by the plasma induction section 164 and the wire 1, and this can be varied according to the production speed of the superconducting wire 1.

[0086] The front and rear ends of the deposition section 120 may be equipped with differential exhaust sections 170 to prevent the plasma generated in the plasma induction section 164 from being unnecessarily transferred to the wire 1.

[0087] The differential exhaust section 170 can maintain a relatively low vacuum state in the area where deposition is substantially performed, thereby improving deposition performance, and can also prevent the plasma generated between the injection head 152 and the wire 1 from reaching the guide roll 135.

[0088] In other words, if plasma reaches the guide roll 135, it will damage the surface of the guide roll 135, which will then be transferred to the wire 1, fatally affecting the quality of the wire 1. Therefore, to prevent plasma from being generated around the guide roll 135, the differential exhaust unit 170 removes some of the gas from inside.

[0089] In order to improve removal efficiency, it is preferable that the differential exhaust section 170 has a large inlet.

[0090] Furthermore, to prevent damage from plasma passing through the differential exhaust section 170, a shield plate 136 can be provided on the guide roll 135 to protect it.

[0091] The winding section 190 may include a winding chamber 194 and a winding roller for winding the wire 1 on which the superconducting layer 30 is formed.

[0092] A heat treatment section 180 may be provided between the deposition section 120 and the winding section 190. The heat treatment section 180 may include a heat treatment chamber 182 connected to the deposition chamber 130 and the winding chamber 194 by connecting pipes, and a heating unit 184 for heating the wire 1 on which the superconducting layer 30 is formed and which is being transported.

[0093] The wire 1, heated to a high temperature by the heating unit 184 of the guide section 140, is rapidly cooled during transport after vapor deposition. However, such cooling can cause stress on the vapor-deposited surface. The heat treatment unit 180 mitigates this cooling and provides a high-quality superconducting wire 1 that reduces the stress that may occur on the vapor-deposited surface.

[0094] The method for manufacturing a superconducting wire according to one embodiment of the present invention will be described below.

[0095] Referring to Figure 11, the method for manufacturing a superconducting wire according to one embodiment of the present invention may include a wire supply step (S100), a superconducting layer formation step (S200), and a winding step (S400).

[0096] First, all steps in the superconducting wire manufacturing method are carried out in a reel-to-reel format, within separate chambers connected by vacuum. This prevents the superconducting wire 1, which is susceptible to moisture, from corroding.

[0097] The wire supply stage (S100) involves supplying wire 1 with a buffer layer 20 formed on it to the substrate 10. The wire 1 is wound on an unwinding roller 114 and is sequentially unwound and supplied to the deposition section 120.

[0098] The superconducting layer formation step (S200) involves forming a superconducting layer 30 on the supplied wire 1, and may include a heating step (S210) and a deposition step (S220).

[0099] Prior to this superconducting layer formation step (S200), the deposition chamber 130 is evacuated to maintain a vacuum state in order to maintain the process pressure, and the differential pumping unit 170 provided in the deposition chamber 130 operates to maintain a low vacuum state in the space where deposition takes place.

[0100] The injection unit 150 and the deposition assist unit 160 are activated to supply organometallic raw materials and diffuse the plasma.

[0101] Subsequently, the superconducting layer formation step (S200) is carried out by the operation of the guide section 140. The heating step (S210) involves heating the wire 1. As shown in Figures 2 and 5, heating units 144 and 244, located inside the guide drum 142 or conveyor 242, operate to heat the wire 1, which is being transported along the guide drum 142 or conveyor 242, to a temperature suitable for deposition.

[0102] In the deposition stage, organometallic raw materials are sprayed onto the wire 1, which has been heated by heating units 144 and 244, through numerous fine holes 152a by the spray head 152. Simultaneously, the deposition assist unit 160 diffuses the plasma to assist the surface reaction of the wire 1.

[0103] To explain this in more detail, monoatomic oxygen (O) supplied from the plasma generation unit 162 is injected through the plasma induction unit 164 in either bidirectional or unidirectional directions, and is guided between the injection head 152 and the wire 1, closer to the wire 1 side.

[0104] In other words, a vaporized gas of organometallic raw materials is injected to form a film of Y (Yttrium), B (Barium), and C (Copper) components on the surface of the wire 1, and ionized oxygen ions diffused in the plasma induction unit 164 bind to this film, ultimately forming YBa2Cu3O on the surface of the wire 1. 7-x (REBCO) film can be formed.

[0105] The crystals of the grown wire 1 can have the same lattice structure as the crystal structure grown in the IBAD layer 26, and the growing crystal layer can grow while maintaining the same crystal structure and orientation (a-axis, c-axis) as the wire 1.

[0106] The most important requirement for using second-generation high-temperature superconductor (HTS) wires in superconducting applications (such as electromagnets) is a high critical current (IC) value under high magnetic fields.

[0107] In particular, the critical current density (Jc) must be as large as possible, even under large magnetic fields applied in any direction. The limit of the critical current density is determined by the action of artificial pins (flux pinning centers) that fix the magnetic flux lines in place against the Lorentz force, preventing them from moving when they penetrate from the outside and are distributed within the superconductor.

[0108] Such magnetic flux fixation points containing impurities can be spontaneously created during the superconducting wire manufacturing process according to one embodiment of the present invention.

[0109] After the deposition step (S200), a heat treatment step (S300) is performed in which the wire 1 on which the superconducting layer 30 has been deposited is heat-treated. In the heat treatment step (S300), the wire 1 on which the superconducting layer 30 has been formed is heated by the heating unit 184, preventing the wire 1, which has been deposited at a high temperature, from cooling rapidly during transport, thereby mitigating the cooling and reducing the stress that may occur on the deposited surface.

[0110] After the heat treatment stage (S300), the winding stage (S400) is carried out. In the winding stage (S400), the wire 1 on which the superconducting layer 30 is formed is wound onto the winding roller 194 and transmitted to the next process.

[0111] According to the present invention described above, high-quality superconducting wires can be manufactured by applying remote plasma to organometallic chemical vapor deposition to accelerate epitaxial growth.

[0112] In this invention, the injection head is formed in a shape corresponding to the guide section, enabling uniform injection of organometallic raw materials. The plasma guidance section, which diffuses the plasma, has a shape corresponding to the guide section, so that the plasma is diffused at a uniform distance from the entire surface of the wire, thereby greatly improving uniform quality and production speed.

[0113] Although the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely illustrative examples, and a person with ordinary skill in the art will understand that a variety of modifications and equivalent other embodiments are possible therefrom.

[0114] Therefore, the scope of technical protection of the present invention should be defined by the following claims.

Claims

1. A supply unit that supplies wire material with a buffer layer formed on it, A deposition unit for depositing a superconducting layer onto the wire supplied from the supply unit, The deposition section is provided with a deposition assisting section that assists the surface reaction of the wire, A superconducting wire manufacturing apparatus, characterized by including a winding unit for winding the wire on which the superconducting layer has been deposited in the deposition unit.

2. The aforementioned vapor-deposited portion is Evaporation chamber and A guide section provided in the deposition chamber for guiding the movement of the wire and heating the wire, The superconducting wire manufacturing apparatus according to claim 1, further comprising an injection unit for injecting an organometallic raw material to deposit a superconducting layer onto the wire guided by the guide unit.

3. The superconducting wire manufacturing apparatus according to claim 2, characterized in that the guide portion is formed to a length corresponding to the width of the wire and includes a guide drum equipped with a heating unit inside.

4. The superconducting wire manufacturing apparatus according to claim 3, characterized in that the injection unit includes an injection head that is spaced apart from the guide drum and partially surrounds the guide drum, and has a plurality of fine holes formed in which an organometallic raw material is injected.

5. The superconducting wire manufacturing apparatus according to claim 2, characterized in that the guide section includes a conveyor that transports the wire and is equipped with a heating unit inside.

6. The aforementioned deposition auxiliary unit is A plasma generation unit provided outside the deposition chamber, The superconducting wire manufacturing apparatus according to claim 2, characterized by including a plasma induction section for diffusing plasma between the guide section and the injection section.

7. The superconducting wire manufacturing apparatus according to claim 6, characterized in that the plasma induction section is formed to correspond to the shape of the guide section, and the remote plasma injection direction line and the surface of the wire are formed at a uniform distance.

8. The superconducting wire manufacturing apparatus according to claim 6, characterized in that the plasma induction unit is positioned so that the distance between the plasma and the wire can be adjusted.

9. The superconducting wire manufacturing apparatus according to claim 6, characterized in that the front and rear ends of the deposition section are provided with differential exhaust sections for preventing the plasma generated in the plasma induction section from being transferred to the wire.

10. The superconducting wire manufacturing apparatus according to claim 1, characterized in that it includes a heat treatment section for heat treating the wire on which the superconducting layer supplied from the deposition section is deposited.

11. A wire supply step involves supplying wires with a buffer layer formed on a substrate, A superconducting layer formation step in which a superconducting layer is formed on the supplied wire, The process includes a winding step of winding up the wire on which the superconducting layer has been deposited, The superconducting layer formation step is, A heating step of heating the supplied wire, A method for manufacturing a superconducting wire, characterized by comprising a deposition step of spraying an organometallic raw material onto a heated wire and simultaneously generating plasma.

12. The method for manufacturing a superconducting wire according to claim 11, further characterized in that, after the deposition step, a heat treatment step is performed in which the wire on which the superconducting layer has been deposited is heat treated.

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