Apparatus and method for brush cleaning using periodic chemical treatment

Abstract

Chemical mechanical polishing (CMP) systems include apparatus and methods for cleaning brushes used to scrub substrates, including brush cleaning using periodic chemical treatments. One or more embodiments include a method for operating a CMP system, which involves rotating one or more first scrubber brushes while they are in contact with a first substrate, performing a cleaning treatment for one or more second scrubber brushes simultaneously with the rotation during a first period, performing a cleaning treatment for one or more first scrubber brushes during a second period of the cleaning cycle, and rotating one or more second scrubber brushes while they are in contact with a second substrate simultaneously with the cleaning treatment during the second period.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a cleaning module used for scrub cleaning a substrate, and more particularly to an apparatus and method for brush cleaning using periodic chemical treatment.

Background Art

[0002] Integrated circuits are typically formed on a substrate (e.g., a silicon wafer) by continuously depositing conductive, semiconductive, or insulating layers thereon and continuously processing these layers.

[0003] One manufacturing step includes depositing a fill layer on a non-planar surface disposed on the substrate and planarizing the fill layer until the non-planar surface is exposed. For example, a conductive fill layer may be deposited on a patterned insulating layer to fill trenches or holes in this insulating layer. The fill layer is then polished until the raised pattern of the insulating layer is exposed.

[0004] Chemical mechanical polishing (CMP) is one recognized planarization method known in the art. In this planarization method, it is usually necessary to attach the substrate to a carrier head. The exposed surface of the substrate is placed against a rotating polishing pad. The carrier head applies a controllable load to the substrate to press the substrate against the polishing pad. For example, the carrier head can apply a specific load to the back surface of the substrate to press the substrate against the polishing pad. A polishing liquid such as a slurry containing polishing particles is supplied to the surface of the polishing pad. For example, a cerium-based slurry, such as a slurry containing cerium oxide, can be used in the polishing of semiconductor layers or thin insulating layers in CMP.

[0005] After polishing, slurry residue is conventionally cleaned or scrubbed from the substrate surface using a mechanical scrubbing device that may employ a scrubber brush. Such brushes can be made of polyvinyl acetate (PVA), other porous or sponge-like materials, or nylon bristles. While a scrubbing device can remove most of the slurry and other fine particles from the substrate surface when the brush is clean, residual slurry and fine particles may adhere to the brush after cleaning one or more substrates, and streaks or other residues may be visible on the substrate surface after the application of the mechanical scrubbing device. Therefore, to improve the effectiveness of the cleaning process, it is necessary to clean the scrubber brush to remove residual slurry and fine particles.

[0006] One technique for cleaning scrubber brushes is to apply or spray a cleaning fluid directly or indirectly onto the brushes while a mechanical scrubbing device is applied to the substrate. In such cases, the chemicals of the cleaning fluid should be compatible with the substrate, including features, devices, components, layers, etc., formed on or within the substrate. However, cleaning scrubber brushes with a compatible cleaning fluid can be time-consuming, unsatisfactory, or both.

[0007] Other techniques may involve using a cleaning fluid that contains chemicals that are more effective at cleaning the scrubber brushes but are incompatible with the substrate. In that case, substrate cleaning can be temporarily stopped so that the cleaning fluid can be applied to the scrubber brushes without the substrate present. After cleaning the scrubber brushes, substrate cleaning can be resumed. This technique cleans the scrubber brushes more effectively, but it will reduce substrate throughput because the entire substrate cleaning sequence becomes slower due to the need to temporarily stop cleaning the scrubber brushes.

[0008] Therefore, in this technical field, there is a need for improved apparatus and methods for cleaning brushes used in chemical-mechanical cleaning. [Overview of the project]

[0009] The embodiments described herein generally relate to cleaning brushes used for scrubbing the surface of a substrate. More specifically, the embodiments described herein provide apparatus and methods for cleaning brushes using periodic chemical treatment.

[0010] One or more embodiments include a method for operating a chemical mechanical polishing (CMP) system. The method includes rotating one or more first scrubber brushes in a first brush cleaner of the CMP system during a first period of a cleaning cycle, while the first one or more first scrubber brushes are in contact with a first substrate. The method further includes performing a cleaning process for one or more second scrubber brushes in a second brush cleaner of the CMP system, simultaneously with the above rotation during the first period. The method further includes performing a cleaning process for one or more first scrubber brushes in the first brush cleaner during a second period of a cleaning cycle. The method further includes rotating one or more second scrubber brushes in contact with a second substrate, simultaneously with performing the cleaning process during the second period.

[0011] In one or more embodiments, the CMP system includes a first brush cleaning machine including one or more first scrubber brushes, a second brush cleaning machine including one or more second scrubber brushes, and a system controller. The system controller is configured to simultaneously control the first brush cleaning machine and the second brush cleaning machine so that the one or more first scrubber brushes are rotated while they are in contact with a first substrate. The system controller is further configured to simultaneously control the first brush cleaning machine and the second brush cleaning machine to perform a cleaning process for the one or more second scrubber brushes while they are rotating during a first period. The system controller is further configured to simultaneously control the first brush cleaning machine and the second brush cleaning machine to perform a cleaning process for the one or more first scrubber brushes during a second period of the cleaning cycle. The system controller is further configured to simultaneously control the first brush cleaning machine and the second brush cleaning machine in order to rotate one or more second scrubber brushes while performing a cleaning process during a second period, during which time the one or more second scrubber brushes are in contact with the second substrate.

[0012] In one or more embodiments, the CMP system includes a first brush cleaning machine including one or more first scrubber brushes, a second brush cleaning machine including one or more second scrubber brushes, and a computer-readable medium for storing instructions. When an instruction is executed by the processor of the CMP system, it causes the CMP system to rotate the one or more first scrubber brushes while they are in contact with a first substrate. The instruction further causes the CMP system to perform a cleaning process for the one or more second scrubber brushes while simultaneously rotating them during a first period. The instruction further causes the CMP system to perform a cleaning process for the one or more first scrubber brushes during a second period of the cleaning cycle. The instruction further causes the CMP system to rotate the one or more second scrubber brushes while simultaneously performing the cleaning process during the second period, during which the one or more second scrubber brushes are in contact with a second substrate.

[0013] To better understand the features of this disclosure described above, a more detailed description of this disclosure, which is briefly summarized above, can be obtained by referring to the embodiments. Some embodiments are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of this disclosure, allowing for other equally valid embodiments. [Brief explanation of the drawing]

[0014] [Figure 1] This is a schematic top view of a chemical mechanical polishing (CMP) system according to one or more embodiments. [Figure 2A] This is a perspective view of an example of a brush cleaning machine used in the CMP processing system shown in Figure 1, according to one or more embodiments. [Figure 2B] This is a top-down cross-sectional view of the brush cleaning machine shown in Figure 2A, according to one or more embodiments. [Figure 2C]This is a perspective view of a scrub cleaning device that performs periodic brush cleaning according to a specific embodiment. [Figure 2D] This is a perspective view of a scrub cleaning device that performs periodic brush cleaning according to a specific embodiment. [Figure 3] This shows a cleaning sequence pattern for periodic brush cleaning within a CMP system according to a specific embodiment. [Figure 4] This shows a cleaning sequence pattern for periodic brush cleaning within a CMP system according to a specific embodiment. [Figure 5] This shows a cleaning sequence pattern for periodic brush cleaning within a CMP system according to a specific embodiment. [Figure 6] This shows a cleaning sequence pattern for periodic brush cleaning within a CMP system according to a specific embodiment. [Figure 7] This figure shows a method for operating a CMP system according to a specific embodiment. [Modes for carrying out the invention]

[0015] For ease of understanding, the same reference numerals have been used where possible to indicate identical elements common to the figures. It is assumed that elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0016] Embodiments of the Disclosure provided herein generally relate to cleaning brushes used to scrub a substrate, for example, after a chemical mechanical polishing (CMP) process. More specifically, embodiments described herein provide apparatus and methods for brush cleaning a substrate, provided by a cleaning sequence that performs periodic chemical treatments on a brush cleaning apparatus. During the CMP process, the polished film may be redeposited on the surface of the substrate (e.g., a wafer), and residues may be formed on the surface of the substrate by components of the polishing process (e.g., abrasive particles or polishing pads, carrier rings or conditioning disc debris). When the brushes of a brush cleaning machine are applied to the substrate to remove the film during the substrate cleaning process, debris and remaining slurry components from the film may accumulate on the brushes. To remove the residues from the brushes, a cleaning solution can be applied to the brushes. However, such cleaning solutions may etch the film from the substrate.

[0017] In one or more embodiments described herein, the brushes of a brush cleaning machine may be periodically cleaned without a substrate. In one or more embodiments, two or more brush cleaning machines are used in a CMP system so that the brushes of a first brush cleaning machine are cleaned during a predetermined period while idle, while a second brush cleaning machine loaded with a substrate is operated to clean the substrate. One or more embodiments include a cleaning pattern in which two or more brush cleaning machines alternate between periods used to clean the brushes of the brush cleaning machines and periods used to perform a substrate cleaning process using the brush cleaning machines. By alternating, the brush cleaning machines can be used efficiently to increase the substrate cleaning throughput using the brush cleaning machines, provide cleaned brushes to be applied to the substrate by the brush cleaning machines during the substrate cleaning process, improve the cleanliness of the substrate, and maintain or improve the substrate cleaning throughput.

[0018] Exemplary chemical mechanical polishing system FIG. 1 shows a schematic top view of a chemical mechanical polishing (CMP) system 100. The system 100 generally includes a factory interface module 102, an input module 104, a polishing module 106, and a cleaning module 108. These four main components are generally arranged within the CMP system 100.

[0019] The factory interface 102 includes a support for holding a plurality of substrate cassettes 110, a housing 111 surrounding the chamber, and one or more interface robots 112. The factory interface robot 112 generally provides the range of motion necessary to transfer substrates between the cassette 110 and one or more other modules of the system 100.

[0020] The unprocessed substrate is generally transferred from the cassette 110 to the input module 104 by the interface robot 112. The input module 104 generally facilitates the transfer of the substrate between the interface robot 112 and the transfer robot 114. The transfer robot 114 transfers the substrate between the input chamber 104 and the polishing chamber 106.

[0021] The polishing module 106 generally includes a transfer station 116 and one or more polishing stations 118. The transfer station 116 is disposed within the polishing module 106 and is configured to receive the substrate from the transfer robot 114. The transfer station 116 transfers the substrate to the carrier head 124 of the polishing station 118 that holds the substrate during polishing.

[0022] Each polishing station 118 includes a rotatable disk-shaped platen, on which a polishing pad 120 is positioned. The platen is operable to rotate about an axis. The polishing pad 120 can be a two-layer polishing pad including an outer polishing layer and a more flexible backing layer. Each polishing station 118 can further include a dispensing arm 122 for dispensing a polishing liquid (such as a polishing slurry) onto the polishing pad 120. In the polishing slurry, the polishing particles can be silicon oxide, but there is also a polishing process using cerium oxide polishing particles. Each polishing station 118 can also include a conditioner head 123 for maintaining the polishing pad 120 at a constant surface roughness.

[0023] Each polishing station 118 includes at least one carrier head 124. The carrier head 124 is operable to hold the substrate against the polishing pad 120 during the polishing process. After the polishing process on the substrate, the carrier head 124 returns the substrate to the transfer station 116.

[0024] Next, the transfer robot 114 removes the substrate from the polishing module 106 through an opening connecting the polishing module 106 and the rest of the CMP system 100. The transfer robot 114 removes the substrate in a horizontal orientation from the polishing module 106 and transfers the substrate to the cleaning module 108.

[0025] The cleaning module 108 generally includes one or more cleaning devices that can operate independently or in cooperation. For example, the cleaning module 108 may include, from top to bottom in Figure 1, one or more pre-cleaning modules 129, three or more brush cleaning machines 131, a megasonic cleaning machine 133, and a dryer 134. Other possible cleaning devices include a chemical spin cleaning machine and a jet spray cleaning machine (not shown). A transfer system, such as an overhead conveyor 130 supporting a robotic arm, can move the substrate slowly or quickly from one cleaning device to another. Furthermore, an overhead transfer robot may be used for this same substrate transfer. As detailed below, the three or more brush cleaning machines 131 are devices in which a substrate can be placed and which bring the surface of the substrate into contact with a rotating brush or rotating buff pad to remove any remaining fine particles. The substrate is then transferred to the megasonic cleaning machine 133, in which high-frequency vibrations generate controlled cavitation in the cleaning fluid to clean the substrate. Alternatively, the megasonic cleaning machine 133 may be positioned before the brush 131 or the pre-cleaning module 129. A final rinse may be performed within the rinsing module before being transferred to the drying module 134.

[0026] As described above, the CMP system 100 transfers the substrate from the polishing module 106 into the cleaning module 108. Debris from the polishing process, such as polishing particles or organic materials from the polishing pad or slurry, may adhere to the substrate. Some of these materials from the polishing module 106, such as polishing particles and organic additives, are difficult to remove.

[0027] A system controller 140 (such as a programmable computer) is connected to the rest of the system 100 or to components of the system 100. In one or more embodiments, the system controller 140 can control the operation of one or more of the following: the factory interface module 102, the input module 104, the polishing module 106, and the cleaning module 108 (including one or more components of the cleaning module 108, each of which is a brush cleaning machine 131). During operation, the system controller 140 enables data acquisition and feedback to adjust the operation of the factory interface module 102, the input module 104, the polishing module 106, and the cleaning module 108 (including one or more components of the cleaning module 108, each of which is a brush cleaning machine 131).

[0028] The system controller 140 includes a programmable central processing unit (CPU) 142, which can operate together with memory 144 (e.g., non-volatile memory) and support circuits 146. The support circuits 146 (e.g., cache, clock circuit, input / output subsystem, power supply, etc., and combinations thereof) are conventionally connected to the CPU 142 and to various other components of the system 100.

[0029] In some embodiments, the CPU 142 is one of any form of general-purpose computer processor used in industrial settings, such as a programmable logic controller (PLC), for controlling various monitoring system components and subprocessors. The memory 144 connected to the CPU 142 is non-transient and is typically one or more readily available memory, such as local or remote digital storage in the form of random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form.

[0030] Here, memory 144 is in the form of a computer-readable storage medium containing instructions (e.g., non-volatile memory), and these instructions, when executed by the CPU 142, facilitate the processing of the system 100. The instructions in memory 144 are in the form of a program product (e.g., a middleware application, a device software application, etc., a program that implements the method of this disclosure). The program code may conform to any one of several different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use in a computer system. The program of the program product defines the function of the embodiment (including the method described herein).

[0031] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media on which information is permanently stored (e.g., read-only memory devices in a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media on which modifiable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media constitute embodiments of the present disclosure when they carry computer-readable instructions that direct the functionality of the methods described herein.

[0032] An exemplary scrub cleaning device capable of brush cleaning. Figure 2A is an isometric view of a brush cleaning machine 131 that may be used within the cleaning module 108 described above. The lid portion of the brush cleaning machine 131, including the door, has been removed from Figures 2A and 2B for ease of description. The brush cleaning machine 131 shown in Figure 2A may be a scrubber brush box type vertical cleaning machine. The exemplary brush cleaning machine 131 includes a tank 205 supported by a first support 225 and a second support 230. The brush cleaning machine 131 includes actuators 235, each actuator 235 being coupled to cylindrical rollers 228 located inside the tank 205. Each actuator 235 may include a drive motor, such as a direct drive servo motor, adapted to rotate the respective cylindrical roller around axes A' and A''. Each actuator 235 is connected to a system controller 140 adapted to control the rotational speed of the cylindrical rollers.

[0033] The linkage 210 and actuator 245 are configured to allow the cylindrical rollers 228, located inside the tank 205, to move relative to the main surface of the substrate 200 (shown in Figure 2B). The actuator 245 is connected to a controller to control the movement of the linkage 210 relative to the substrate, which is positioned between the cylindrical rollers 228. During operation, the first support 225 and the second support 230 may be moved simultaneously relative to the base 240. Such movement can bring the first cylindrical rollers 228 and the second cylindrical rollers 228 closer to the substrate 200, as shown in Figure 2C, or separate the first cylindrical rollers 228 and the second cylindrical rollers 228 to allow insertion of the substrate 200 and / or removal of the substrate 200 from the brush cleaning machine 131.

[0034] Figure 2B is a top view of the brush cleaning machine 131 of Figure 2A showing cylindrical rollers 228 in a processing position, where the cylindrical rollers 228 are closed to or pressed against the main surface of the substrate 200. The brush cleaning machine 131 also includes one or more drive motors 244 and rotating devices 247. Each of the drive motors 244 and rotating devices 247 includes a roller 249, which is located at the end of the output shaft of each drive motor 244 and rotating device 247 and is configured to support and / or engage with the substrate 200 to facilitate the rotation of the substrate 200 around an axis parallel to the horizontal plane (i.e., the XY plane).

[0035] Each of the cylindrical rollers 228 is fitted with a tubular cover (tubular covers 213a, 213b shown in Figures 2C and 2D, not shown in Figure 2B). The tubular covers 213a, 213b may be removable sleeves made of a pad material used to polish the substrate 200, or they may be brush bodies adapted for cleaning the substrate 200. The tubular covers 213a, 213b are also referred to herein as scrubber brushes. During processing in the brush cleaning machine 131, the tubular covers 213a, 213b of the cylindrical rollers 228 are brought into contact with the substrate while being rotated by the actuator 235, and the substrate 200 is rotated using a support roller 249 coupled to the output shaft of the drive motor 244 and the rotating device 247. While the substrate 200 and cylindrical roller 228 are rotating by various actuators and motors, a second processing fluid, such as deionized (DI) water and / or one or more second cleaning fluids (e.g., an acid-containing aqueous solution or a base-containing aqueous solution), is applied to the surface of the substrate 200 from a second fluid source.

[0036] According to one embodiment, a dedicated conditioning device 260 may be provided for each of the cylindrical rollers 228. The conditioning device 260 may also be referred to as a “beater bar”. The conditioning device 260 is attached near the side wall of the tank 205 by one or more support members 270. The conditioning device 260 is positioned away from the center of the tank 205 so as not to interfere with the substrate transfer process and / or the substrate polishing or cleaning process. However, the conditioning device 260 is positioned to contact each of the cylindrical rollers 228 when the first support 225 and the second support 230 are moved downward and outward so as to move further apart from each other. In one embodiment, the movement of the first support 225 and the second support 230 causes the cylindrical rollers 228 to come into contact with their respective conditioning devices 260. In this position, the treatment surfaces of the tubular covers 213a, 213b on each cylindrical roller 228 can be adjusted during the relative motion between the cylindrical roller 228 and the conditioning device 260. In one or more embodiments, a dedicated conditioning device 260 ("beater bar") is used to enhance brush cleaning during the brush cleaning process.

[0037] Figure 2C is a perspective view of one or more embodiments of a scrub cleaning device 211 located within a brush cleaning machine 131. The scrub cleaning device 211 shown in Figure 2C is depicted with the substrate 200 loaded, thereby putting the scrub cleaning device 211 in a loaded state 233. The scrub cleaning device 211 includes a pair of cylindrical rollers 228, each containing a pair of tubular covers 213a, 213b. In one or more embodiments, the pair of tubular covers 213a, 213b are polyvinyl acetate (PVA) brushes. Each brush includes a set of multiple raised bumps 215 across the surface of the brush and a set of multiple valleys 217 located between the bumps 215. A pair of cylindrical rollers 228 are supported by a pivot mounting portion (generally represented by reference no. 218) which is adapted to move the pair of tubular covers 213a and 213b of the cylindrical rollers 228 to contact and not contact a substrate 200 (e.g., a semiconductor wafer) supported by a substrate support (which may also be called a wafer support). Thus, the cylindrical rollers 228 can be moved between a closed position and an open position so that the substrate 200 can be withdrawn from and inserted between them, as described below.

[0038] The scrubbing device 211 also includes a substrate support adapted to support the substrate 200 and further adapted to rotate the substrate 200. In one embodiment, the substrate support may include a plurality of rollers 249a-c (Figures 2C-2D), each having a groove adapted to support the substrate 200 vertically. A first motor (or a plurality of motors) of the actuator 235 is connected to a cylindrical roller 228 and adapted to rotate the tubular covers 213a and 213b of the cylindrical roller 228 in rotational directions 203 and 204, respectively. A second motor 244 is connected to rollers 249a and 249c respectively and adapted to rotate rollers 249a and 249c, and a third motor 247 is coupled to roller 249b and adapted to rotate roller 249b.

[0039] The scrubbing cleaning apparatus 211 may further include a plurality of spray nozzles 221 (including at least 221a, 221b, 221c, and 221d) connected to a source 223 of substrate cleaning fluid via a supply pipe 226. The spray nozzles 221 may be arranged to spray substrate cleaning fluid (e.g., deionized (DI) water, dilute ammonium hydroxide (NH4OH), dilute hydrogen peroxide (H2O2), a mixture of NH4OH and H2O2 (SC1), dilute hydrofluoric acid, a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) (SPM), Electra Clean, or any other solution used for substrate cleaning) onto the surface of the substrate 200 or onto one or more scrubber brushes (e.g., including tubular covers 213a, 213b) during the scrubbing cleaning process. In one or more embodiments, the substrate cleaning fluid and / or brush cleaning fluid described later may be supplied from an internal region of the scrubber brush itself (e.g., cylindrical roller 228 and tubular cover 213a, 213b). The fluid supplied to the inside of the scrubber brush will pass through holes in the tubular cover 213 to clean the surface of the substrate or remove debris found on the surface of the scrubber brush.

[0040] Figure 2B is a perspective view of one or more embodiments of the scrub cleaning device 211 of the brush cleaning machine 131, showing the scrub cleaning device 211 in an idle state 234 with no substrate loaded. In the idle state 234, the scrub cleaning device 211 can perform the brush cleaning process. In one or more embodiments, when the brush cleaning process is being performed, the scrub cleaning device 211 is unavailable for performing the substrate cleaning process. Multiple spray nozzles 221 are connected to a source 223 of brush cleaning fluid via a supply pipe 226. The spray nozzles 221 may be arranged to spray the brush cleaning fluid over one or more scrubber brushes (e.g., including tubular covers 213a, 213b). In one or more embodiments, the brush cleaning fluid may be supplied through the scrubber brushes themselves. In one or more embodiments, the brush cleaning fluid is the same as the substrate cleaning fluid (e.g., deionized (DI) water, dilute ammonium hydroxide (NH4OH), dilute hydrogen peroxide (H2O2), a mixture of NH4OH and H2O2 (SC1), dilute hydrofluoric acid, a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) (SPM), Electraclean).

[0041] In one or more embodiments, the brush cleaning fluid is different from the substrate cleaning fluid. For example, the brush cleaning fluid is hydrofluoric acid (e.g., dilute hydrofluoric acid), SPM, or SC1 (e.g., hydrogen peroxide), while the substrate cleaning fluid is a solvent different from hydrofluoric acid, SPM, or SC1. In this case, it is desirable to use a brush cleaning fluid configured to efficiently clean the surface of the scrubber brush and efficiently remove debris from the surface in order to improve the subsequent substrate cleaning step. However, this brush cleaning chemical may erode and damage one or more materials placed on the surface of the substrate being cleaned in the brush cleaning machine 131. Therefore, the brush cleaning process needs to be performed separately from the substrate cleaning process.

[0042] In one or more embodiments, the spray nozzle 221 includes a first set of spray nozzles 221a for the substrate cleaning fluid and a second set of spray nozzles 221b, 221c for the brush cleaning fluid. In the same embodiment, the supply pipe 226 is separated into separate sources (not shown) for the substrate cleaning fluid and the brush cleaning fluid.

[0043] According to one embodiment of the disclosure herein, the cleaning module 108 may be configured to perform a two-stage cleaning process by sequentially processing each substrate 200 through two of three or more brush cleaning machines 131 within the cleaning module 108, as further described below. That is, after the substrate 200 has been subjected to cleaning in the first brush cleaning machine 131, the overhead conveyor 130 then transfers the substrate 200 to the second brush cleaning machine 131 for further cleaning. During the cleaning process sequence, after processing for a first time period in the first brush cleaning machine 131, the substrate is then transferred to the second brush cleaning machine 131, where it is subsequently processed for a second time period. In one or more embodiments, the first time period is substantially the same as the first time period. The processes performed in the first brush cleaning machine 131 and the second brush cleaning machine 131 may involve using similar fluid chemicals and mechanical processing parameters (e.g., rotational speed of cylindrical rollers and applied force). In some embodiments, the first brush cleaning machine 131 is adapted to perform a rough cleaning step to remove most of the residual contaminants (e.g., particles, abrasive particles, chemical residues, etc.) remaining on the substrate surface after the first cleaning process has been performed in the first cleaning module, and the second brush cleaning machine 131 is configured to perform a cleaning process adapted to remove any residual contaminants remaining from the process performed in the first brush cleaning machine 131.

[0044] Figures 3 to 6 show cleaning sequence patterns 300, 400, 500, and 600 for periodic brush cleaning within a CMP system according to a particular embodiment. Brush cleaning machines 131a, 131b, and 131c may be examples of brush cleaning machine 131 described with reference to Figures 1 to 2D. In one or more embodiments, the CMP system is as described with reference to Figure 1. In one or more embodiments, the patterns 300, 400, 500, and 600 for periodic brush cleaning allow the substrate to be cleaned using a set of brush cleaning machines, and brush cleaning is employed within other systems where it is used or preferred.

[0045] Figure 3 shows a cleaning sequence pattern 300 for periodic brush cleaning that employs a periodic rotation of brush cleaning a series of substrates among the brush cleaning machines 131. One time period (which may be equivalently referred to herein as a cleaning cycle) includes a set number of periods. According to pattern 300, one or more scrubber brushes (e.g., including tubular covers 213a, 213b) of each brush cleaning machine 131 are cleaned during each period of one time period. Each brush cleaning machine 131 is sequentially (periodically) unavailable for substrate cleaning while one or more scrubber brushes are being cleaned in the brush cleaning machine, for example, according to a rotation of periodic brush cleaning processes. One or more brush cleaning machines 131 that are not performing brush cleaning are available for substrate (e.g., wafer) cleaning. One advantage of pattern 300 is that one brush cleaner 131 is cleaned in parallel with the other two brush cleaners 131 performing one step of a two-stage cleaning process, thereby ensuring that one or more scrubber brushes are cleaned consistently, while at least two brush cleaners 131 remain available for the substrate cleaning process, thereby maintaining a constant flow of substrates to be cleaned without interrupting the substrate processing sequence performed within the cleaning module 108 to clean the scrubber brushes.

[0046] In Figures 3 to 6, the circuit boards loaded into the brush cleaning machine 131 are indicated by their circuit board numbers, followed by whether the brush cleaning machine is in the first step (A) or the second step (B) of the two-stage cleaning process.

[0047] According to the cleaning sequence pattern 300, during the first period t1 of the time cycle 301, the brush cleaning machine 131a is in a loaded state (e.g., loaded state 233) to perform a substrate cleaning process for a first substrate, and the brush cleaning machine 131b is in a loaded state (e.g., loaded state 233) to perform a substrate cleaning process for a second substrate. Furthermore, during the first period t1 of the time cycle 301, the brush cleaning machine 131c is in an idle state (e.g., idle state 234) to perform a brush cleaning process for cleaning scrubber brushes (e.g., tubular covers 213a, 213b). In one or more embodiments, the brush cleaning process may use a cleaning solvent different from the cleaning solvent used for the substrate cleaning process. As described above, the brush cleaning process may involve supplying a brush cleaning fluid to the outer surface of the scrubber brush by a nozzle (e.g., spray nozzles 221b, 221c) and / or supplying the brush cleaning fluid to the interior of the scrubber brush so that the brush cleaning fluid supplied to the interior passes through the pores of the tubular cover 213 to remove debris found on the surface of the scrubber brush.

[0048] During the second period t2 of the time cycle 301, different brush cleaning machines 131 can perform different cleaning processes than during the first period t1, according to the cleaning sequence pattern 300. In one or more embodiments, brush cleaning machines 131b, 131c are in a loaded state (e.g., loaded state 233) that performs a substrate cleaning process, and brush cleaning machine 131a is in an idle state that performs a brush cleaning process.

[0049] In one or more embodiments, a substrate may be cleaned in a brush cleaner 131 during a first period (e.g., t1) and then passed to a different brush cleaner 131 as part of a two-stage cleaning process during a next period (e.g., t2). A first substrate (1B) is cleaned in a brush cleaner 131b during a time period t1 and is in the second step of the two-stage cleaning process (the first step of the two-stage cleaning process is performed during a period prior to the first time period t1 of the first time period 301). A second substrate (2A), cleaned in a brush cleaner 131a during time t1, is passed to a brush cleaner 131c (now 2B) during a second time period t2.

[0050] During the third period t3 of the time cycle 301, another brush cleaning machine 131a may perform a different brush cleaning process according to pattern 300 than the one performed during the first period t1 and the second period t2. In one or more embodiments, brush cleaning machines 131b, 131c are in a loaded state (e.g., loaded state 233) that performs a substrate cleaning process, and brush cleaning machine 131a is in an idle state that performs a brush cleaning process.

[0051] In one or more embodiments, a substrate (3A) cleaned in brush cleaning machine 131b during a second period (e.g., t2) may be passed to a different brush cleaning machine 131c during a third period t3 (currently 3B) as part of a two-stage cleaning process. A first substrate (2B) cleaned in brush cleaning machine 131c during period t2 is in the second step of the two-stage cleaning process (the first step of the two-stage cleaning process is performed in brush cleaning machine 131a during period t1 (2A)), and at the end of period t2 (2B), the first substrate is passed to the next cleaning module in cleaning module 108 (e.g., megasonic cleaning machine 133 or dryer 134), or is removed from cleaning module 108 and passed, and a fourth substrate (4A) is introduced into cleaning module 108 and cleaned in brush cleaning machine 131a during period t3.

[0052] According to pattern 300, time period 302 can repeat the pattern of the brush cleaning machine 131 being loaded and idle during time periods t4, t5, and t6, time period 303 can repeat the pattern of the brush cleaning machine 131 being loaded and idle during time periods t7, t8, and t9, and so on.

[0053] Pattern 300 can improve the cleanliness and consistency of brush cleaning while also enabling improved substrate cleaning throughput. This is because, for example, at least two brush cleaning machines 131 are always available for substrate cleaning.

[0054] Figure 4 shows a cleaning sequence pattern 400 for periodic brush cleaning that employs a regular rotation of brush cleaning among the brush cleaning machines 131, where the brush cleaning process is not switched between the brush cleaning machines 131 for each subsequent period. In one or more embodiments, the brush cleaning process may be performed over at least one period (e.g., brush cleaning machine 131c performs the brush cleaning process during t1). As shown in Figure 4, in a subsequent period (e.g., t2), the brush cleaning machine 131c is now clean but idle, waiting for a substrate to be loaded in the subsequent period (e.g., a third substrate (3B) is loaded into the brush cleaning machine 131c and cleaned during period t3). In other embodiments, the brush cleaning machine 131c may continue the cleaning process for a longer period than period t1, for example, over all or part of period t2. In one or more embodiments, the cleaning time may be a shorter period than period t1, for example, part of period t1.

[0055] A time cycle of 1 includes a set number of periods, each containing a specific number of periods. According to the cleaning sequence pattern 400, one or more scrubber brushes (e.g., cylindrical rollers 228 and tubular covers 213a, 213b) of each brush cleaning machine 131 are cleaned during at least one period of the time cycle for the substrate cleaning process (for example, the period of one brush cleaning process may be shorter than one period for the substrate cleaning process, may be one period, may be longer than one period but shorter than two periods, or may span two periods). Each brush cleaning machine 131 is sequentially (periodically) unavailable for the substrate cleaning process while one or more scrubber brushes are being cleaned in the brush cleaning machine. One or more brush cleaning machines 131 that are not performing a brush cleaning process are available for the substrate (e.g., wafer) cleaning process.

[0056] Thus, according to the cleaning sequence pattern 400, during the first period t1 of the time cycle 401, the brush cleaning machines 131a and 131b are in a loaded state (e.g., loaded state 233) to perform substrate cleaning processes for the second substrate (2A) and the first substrate (1B), respectively. Furthermore, during the first period t1 of the time cycle 401, the brush cleaning machine 131c is in an idle state (e.g., idle state 234) to perform brush cleaning. In one or more embodiments, the brush cleaning process is performed during period t1 of the time cycle 401. In other embodiments, the brush cleaning process spans multiple periods, including at least periods t1 and t2 of the time cycle 401. During period t2, the brush cleaning machines 131a and 131b are again in a loaded state, but the substrates being cleaned (2B, 3A) are different from those during period t1, or a different brush cleaning machine 131 is used.

[0057] The brush cleaning process can be completed so that a substrate can be loaded into the brush cleaning machine 131c for periods t3(3B) and t4(4B) of the time cycle 401, and so that the brush cleaning machines 131b and 131c are available for substrate cleaning during periods t3 and t4. The brush cleaning process of the brush cleaning machine 131a is performed during periods t3 and t4. In one or more embodiments, the brush cleaning process is performed during period t3, and the brush cleaning machine 131a is idle during period t4. In one or more other embodiments, the brush cleaning process is performed for at least part of periods t3 and t4, or spans periods t3 and t4. The brush cleaning process can be completed so that the substrates 6A and 7A are loaded into the brush cleaning machine 131a for a period t5 and t6 of time cycle 401, and the brush cleaning machines 131a and 131c are available for substrate cleaning during the period t5 and t6. The brush cleaning process of the brush cleaning machine 131b may be performed during the periods t5 and t6 (for example, for at least part of the period t5, or spanning t5 and t6).

[0058] According to the cleaning sequence pattern 400, the time period 401 can repeat the pattern of the brush cleaning machine 131 being loaded and idle during subsequent time periods, and the subsequent time periods include time periods 402, which include time periods t7, t8, t9, t10, etc.

[0059] The cleaning sequence pattern 400 can, for example, provide an increased time for brush cleaning, less frequent brush cleaning, and improved brush cleaning effectiveness when it is desirable to increase the time between brush cleaning processes and a longer time is available for brush cleaning.

[0060] Figure 5 shows a cleaning sequence pattern 500 for periodic brush cleaning that employs a regular rotation of brush cleaning among brush cleaning machines 131, where the brush cleaning process is not performed during each period. One time cycle includes a set number of periods, each containing a specific number of periods. According to the cleaning sequence pattern 500, one or more scrubber brushes (e.g., cylindrical rollers 228 and tubular covers 213a, 213b) of each brush cleaning machine 131 are cleaned during one period, and the brush cleaning machine 131 is not cleaned during the other periods. Each brush cleaning machine 131 is sequentially (periodically) unavailable for substrate cleaning while one or more scrubber brushes are being cleaned within the brush cleaning machine 131. One or more brush cleaning machines 131 that are not performing brush cleaning are available for substrate (e.g., wafer) cleaning.

[0061] In one or more embodiments, the periods during which scrubber brushes are cleaned within a given time cycle can be spaced apart by one or more periods, so that all brush cleaning machines are available to operate and clean the substrates within that time cycle for one or more periods. The periods during which one of the scrub brushes is cleaned in a particular brush cleaning machine 131 can be spaced apart, or two or more brush cleaning machines can perform the substrate cleaning process during a single period in a given time cycle.

[0062] According to the cleaning sequence pattern 500, each brush cleaning machine 131 of the CMP system 100 performs the substrate cleaning process once during a time period 501 that includes 8 periods. Brush cleaning machines 131a and 131b perform the brush cleaning process during the same period, while brush cleaning machines 131c and 131d perform the brush cleaning process during the same period, but different from the period for brush cleaning machines 131a and 131b.

[0063] Pattern 500 represents a period comprising eight periods, where two sets of three periods (e.g., t2, t3, t4, t6, t7, t8) in which no brush cleaning is performed are interspersed between brush cleaning processes (e.g., t1, t5). However, it is also possible to use brush cleaning processes in a different number and arrangement, consistent with the disclosure herein. For example, in one or more embodiments, the time period 501 has three periods, where one of the three periods is in which no brush cleaning is performed. In other embodiments, the time period 501 has a total of four periods (e.g., t1, t2, t3, t4), where one period (e.g., t2, t4) in which no brush cleaning is performed is sandwiched between each brush cleaning process (e.g., t1, t3).

[0064] The cleaning sequence pattern 500 indicates that during the first period t1 of the time cycle 501, the brush cleaning machines 131a and 131b are in a loaded state (e.g., loaded state 233) and perform substrate cleaning for the first substrate (1A) and the substrate (13B) that started its own two-stage cleaning process during the previous cycle, respectively. Furthermore, during the first period t1 of the time cycle 501, the brush cleaning machines 131c and 131d are in an idle state (e.g., idle state 234) that performs brush cleaning. During period t2, all brush cleaning machines 131a, 131b, 131c, and 131d are reloaded, but the substrates being cleaned are different from those used during period t1, or they have been switched to a different brush cleaning machine 131 (substrates 1B and 14B from the previous time cycle), and the third and fourth substrates (2A and 3A) are loaded into brush cleaning machines 131a and 131b, respectively, for substrate cleaning. During period t2, no brush cleaning is performed on brush cleaning machines 131a, 131b, 131c, and 131d.

[0065] During the third period t3 and the fourth period t4 of the time cycle 501, the brush cleaning machines 131a, 131b, 131c, and 131d are in a loaded state (e.g., loaded state 233) to perform the substrate cleaning process. During the fifth period t5 of the time cycle 501, the brush cleaning machines 131c and 131d are in a loaded state (e.g., loaded state 233) to perform the substrate cleaning process for the seventh substrate (7B) and the eighth substrate (8A), and the brush cleaning machines 131a and 131b are in an idle state (e.g., idle state 234) to perform the brush cleaning process. During the sixth period t6, the seventh period t7, and the eighth period t8 of the time cycle 501, the brush cleaning machines 131a, 131b, 131c, and 131d are all in a loaded state (e.g., loaded state 233) for performing the substrate cleaning process, and the brush cleaning process is not performed on the brush cleaning machines 131a, 131b, 131c, and 131d.

[0066] The cleaning sequence pattern 500 can improve substrate cleaning throughput, for example, when it is desirable to reduce the frequency of brush cleaning and the reduction in frequency is within an acceptable range.

[0067] Figure 6 shows a cleaning sequence pattern 600 for periodic brush cleaning that employs a rotation of brush cleaning among brush cleaning machines 131, where different brush cleaning machines 131 use different periods for brush cleaning. In one or more embodiments, different time periods include a different number of periods. According to pattern 600, time period 601 includes four periods, time period 602 includes five periods.

[0068] During a time cycle 601, the brush cleaning machine 131a performs a brush cleaning process spanning two periods, which includes a first substrate (1B) cleaned in the first step of a two-stage cleaning procedure within a previous time cycle, and a second substrate (2A) loaded and cleaned in the first period t1, and further, the second period t2 includes a second substrate (2B) cleaned in the second step of a two-stage cleaning procedure, and a third substrate (3A) loaded and cleaned in the first step of a two-stage cleaning procedure.

[0069] During the remainder of the time cycle 601, the brush cleaning machine 131b performs a brush cleaning process over one period t3, and substrates 4A and 3B are cleaned in the brush cleaning machine 131a and 131c, respectively, during period t3. The brush cleaning machine 131c performs a brush cleaning process over one period t4, and substrates 4B and 5A are cleaned in the brush cleaning machine 131b and 131a, respectively, during period t4.

[0070] During the time period 602, brush cleaning machine 131a performs a brush cleaning process spanning two periods t5 and t6. Brush cleaning machine 131b performs a brush cleaning process spanning two periods t7 and t8. Brush cleaning machine 131c performs a brush cleaning process spanning one period t9.

[0071] In one or more embodiments, in a time period following time period 601, the first time period alternates with a second time period having four periods (e.g., 601) and five periods (e.g., 602). Thus, brush cleaning machine 131a is cleaned over two periods in each time period, brush cleaning machine 131c is cleaned over one period in each time period, and brush cleaning machine 131b is cleaned over a period that alternates between one period and two periods.

[0072] The cleaning sequence pattern 600 can provide improved configurability and flexibility in the system, for example, when various numbers of cleaning steps, cleaning chemicals, or brush configurations are used.

[0073] In one or more embodiments, one or more of patterns 300, 400, 500, and 600 may use a “dummy wafer” (also referred to as a “dummy substrate”) when performing a brush cleaning process to clean the scrubber brushes. The “dummy wafer” may be circulated separately in the brush cleaning machine 131, or circulated in parallel with the “product wafer” being cleaned in another brush cleaning machine 131. The “dummy wafer” is stored in a queue within the CMP system 100. In one or more embodiments, the “dummy wafer” is substantially the same size and shape as the “product wafer” and is compatible with the brush cleaning fluid. In one or more embodiments, used old “dummy wafers” are periodically removed (e.g., manually or automatically, after a large number of cleaning cycles) and replaced with new “dummy wafers” in the CMP system 100.

[0074] In one or more embodiments, a "dummy wafer" is used to replace (substitute for the function of) the conditioning device 260. In other embodiments, the "dummy wafer" is used in addition to the use of the conditioning device 260. In some embodiments, the use of a "dummy wafer" simplifies the maintenance and processing of the CMP system 100 because the "dummy wafer" is easier to replace than the conditioning device 260.

[0075] Patterns 300, 400, 500, and 600 depict the use of three or four brush cleaning machines 131, but more or fewer brush cleaning machines 131 may be used, consistent with the disclosure herein.

[0076] In one or more embodiments, two brush cleaning machines 131a and 131b are used, where each brush cleaning machine alternates between being available for substrate cleaning during a first period and performing brush cleaning during a second period, so that one brush cleaning machine 131 is available for substrate cleaning during a predetermined period. In one or more other embodiments, brush cleaning machine 131a performs brush cleaning during one set of periods and every fourth period, and brush cleaning machine 131b performs brush cleaning during different sets of periods and every fourth period.

[0077] In one or more embodiments, four or more brush cleaning machines 131 are used, and different brush cleaning machines perform the brush cleaning process over different periods of time. In one embodiment, a three-stage cleaning process is used by four brush cleaning machines 131, so that each brush cleaning machine performs the brush cleaning process every fourth period, and three brush cleaning machines are available for a predetermined period of time.

[0078] Figure 7 shows a method 700 for operating a CMP system according to a specific embodiment. Note that the CMP system 100 is described as illustrative only in the following examples.

[0079] Step 705 includes rotating one or more first scrubber brushes in a first brush cleaner of the CMP system during a first period of the cleaning cycle, while the one or more first scrubber brushes are in contact with a first substrate. In one or more embodiments, the CMP system 100 includes a first brush cleaner 131 (e.g., brush cleaner 131a), where the one or more first scrubber brushes may be an example of a pair of tubular covers 213a, 213b, and the first substrate may be an example of a substrate 200.

[0080] Step 710 includes performing a cleaning process for one or more second scrubber brushes in a second brush cleaner of the CMP system, simultaneously with the rotation described above during the first period. In one or more embodiments, the CMP system 100 includes a second brush cleaner 131 (e.g., brush cleaner 131b), where the one or more second scrubber brushes may be an example of a pair of tubular covers 213a, 213b, and the second substrate may be an example of a substrate 200.

[0081] Step 715 includes performing a cleaning process for one or more first scrubber brushes in the first brush cleaning machine during a second period of the cleaning cycle.

[0082] Step 720 includes rotating one or more second scrubber brushes while performing a cleaning process during a second period, during which time the one or more second scrubber brushes are in contact with the second substrate.

[0083] In addition, in some embodiments of Method 700, steps 705 and 710 are performed substantially simultaneously (together), and steps 715 and 720 are performed substantially simultaneously (together). In some embodiments of Method 700, step 705 is started before the start of step 710. In some embodiments of Method 700, step 710 is started before the start of step 705. In some embodiments of Method 700, step 715 is started before the start of step 720. In some embodiments of Method 700, step 720 is started before the start of step 715.

[0084] When describing elements of this disclosure, or exemplary aspects or embodiments thereof, the articles "a," "an," "the," and "said" are intended to indicate that there is one or more of those elements.

[0085] The terms "comprising," "including," and "having" are intended to be comprehensive, meaning that additional elements beyond those listed may exist.

[0086] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. A method for operating a chemical mechanical polishing (CMP) system, Rotating one or more first scrubber brushes in the first brush cleaning machine of the CMP system during a first period of the cleaning cycle, wherein the one or more first scrubber brushes are in contact with one or more surfaces of the first substrate, and a first substrate cleaning fluid is supplied to the one or more surfaces of the first substrate, During the first period, simultaneously with the rotation, a cleaning process for one or more second scrubber brushes is performed in a second brush cleaning machine of the CMP system, wherein the cleaning process includes supplying a brush cleaning fluid to the surface of one or more second scrubber brushes. Performing a cleaning process on one or more of the first scrubber brushes in the first brush cleaning machine during a second period of the cleaning cycle, wherein the cleaning process includes supplying the brush cleaning fluid to the surface of one or more of the first scrubber brushes, Rotating one or more second scrubber brushes in the second brush cleaning machine of the CMP system, while performing the cleaning process during the second period, during which time the one or more second scrubber brushes are in contact with the second substrate, and the first substrate cleaning fluid is supplied to one or more surfaces of the second substrate. In the third brush cleaning machine of the CMP system, the cleaning process is performed during the second period, and at the same time, one or more third scrubber brushes are rotated, during which time the one or more third scrubber brushes are in contact with the first substrate, and the second substrate cleaning fluid is supplied to one or more surfaces of the first substrate, and the one or more third scrubber brushes are rotated. A method for operating a chemical mechanical polishing (CMP) system, including [specific details omitted].

2. Rotating one or more of the third scrubber brushes in the third brush cleaning machine during the first period, wherein the one or more of the third scrubber brushes are in contact with one or more surfaces of the third substrate, and the first substrate cleaning fluid is supplied to the one or more surfaces of the third substrate. The method according to claim 1, further comprising:

3. During the third period of the cleaning cycle, one or more of the first scrubber brushes are rotated in the first brush cleaning machine, during which time the one or more of the first scrubber brushes are in contact with the third substrate, During the fourth period, one or more of the second scrubber brushes are rotated in the second brush cleaning machine, during which time the one or more of the second scrubber brushes are in contact with the third substrate. The method according to claim 1, further comprising:

4. The method according to claim 1, wherein the brush cleaning fluid has a chemical composition different from that of the first substrate cleaning fluid, or the second substrate cleaning fluid, or both.

5. The method according to claim 1, wherein the first substrate cleaning fluid, the second substrate cleaning fluid, or both thereof, have the same chemical composition as the brush cleaning fluid.

6. During the first period, the first nozzle set of the first brush cleaning machine is used to guide the first substrate cleaning fluid onto the first substrate, During the second period, the second nozzle set of the first brush cleaning machine is used to guide the brush cleaning fluid to one or more of the first scrubber brushes, The method according to claim 1, including the method described in claim 1.

7. Rotating the first scrubber brushes during the first period, while simultaneously rotating the first one or more scrubber brushes, wherein at least one conditioning bar is in contact with one or more of the first scrubber brushes during the rotation of the first one or more scrubber brushes. The method according to claim 1, further comprising:

8. The method according to claim 1, wherein the cleaning cycle is periodic according to a first time period.

9. A chemical mechanical polishing (CMP) system, A first brush cleaning machine including one or more scrubber brushes, A second brush cleaning machine including one or more second scrubber brushes, System controller, During the first period of the cleaning cycle, the first one or more scrubber brushes are rotated while in contact with the first substrate, and the first substrate cleaning fluid is supplied to one or more surfaces of the first substrate. During the first period, a cleaning process is performed which includes simultaneously rotating the brushes and supplying a brush cleaning fluid to the surface of one or more of the second scrubber brushes. During the second period of the cleaning cycle, a cleaning process is performed which includes supplying the brush cleaning fluid to the surface of one or more of the first scrubber brushes, and During the second period, the cleaning process is performed, and at the same time, the second one or more scrubber brushes are rotated while in contact with the second substrate, and the first substrate cleaning fluid is supplied to one or more surfaces of the second substrate. To perform this, a system controller is configured to simultaneously control the first brush cleaning machine and the second brush cleaning machine, A chemical mechanical polishing (CMP) system equipped with [specific feature].

10. The system further comprises a third brush cleaning machine including one or more third scrubber brushes, wherein the system controller, during the first period, performs the rotating and cleaning processes within the third brush cleaning machine during the first period, while simultaneously rotating the one or more third scrubber brushes while they are in contact with the third substrate, and supplying the first substrate cleaning fluid to one or more surfaces of the third substrate. The CMP system according to claim 9, further configured to perform the following:

11. The aforementioned system controller Rotating one or more of the first scrubber brushes during the third period of the cleaning cycle, wherein the one or more of the first scrubber brushes are in contact with the first substrate or the third substrate. Rotating one or more of the second scrubber brushes during the third period, wherein the one or more of the second scrubber brushes are in contact with the second substrate or the fourth substrate. The CMP system according to claim 9, configured to perform the following:

12. The aforementioned system controller During the first period, while rotating one or more of the first scrubber brushes, the first substrate cleaning fluid is introduced to the first substrate, During the second period, the second substrate cleaning fluid is introduced to one or more of the first scrubber brushes, The CMP system according to claim 9, configured to perform the following:

13. The CMP system according to claim 9, wherein the brush cleaning fluid has a chemical composition different from that of the first substrate cleaning fluid, the second substrate cleaning fluid, or both.

14. The CMP system according to claim 9, wherein the first substrate cleaning fluid, or the second substrate cleaning fluid, or both, contains the same chemical composition as the brush cleaning fluid.

15. The aforementioned system controller Rotating the first scrubber brushes during the first period, while simultaneously rotating the first one or more scrubber brushes, wherein at least one conditioning bar is in contact with one or more of the first scrubber brushes during the rotation of the first one or more scrubber brushes. The CMP system according to claim 9, configured to perform the following:

16. A chemical mechanical polishing (CMP) system, A first brush cleaning machine including one or more scrubber brushes, A second brush cleaning machine including one or more second scrubber brushes, A computer-readable medium for storing instructions, wherein when an instruction is executed by the processor of the CMP system, the CMP system... Rotating one or more of the first scrubber brushes during a first period of the cleaning cycle, wherein the one or more of the first scrubber brushes are in contact with the first substrate, During the first period, simultaneously with the rotation, a cleaning process is performed for one or more of the second scrubber brushes. During the second period of the cleaning cycle, a cleaning process is performed for one or more of the first scrubber brushes, and During the second period, the cleaning process is performed while simultaneously rotating one or more of the second scrubber brushes, the one or more of the second scrubber brushes are in contact with the second substrate. A computer-readable medium that enables the following: A chemical mechanical polishing (CMP) system equipped with [specific feature].

17. The CMP system according to claim 16, further comprising a third brush cleaning machine including one or more third scrubber brushes, wherein the system controller is further configured to perform the rotating and cleaning processes within the third brush cleaning machine during the first period, while the one or more third scrubber brushes are in contact with the third substrate.

18. The aforementioned instruction is given to the CMP system: Rotating one or more of the first scrubber brushes in the first brush cleaning machine during the third period of the cleaning cycle, wherein the one or more of the first scrubber brushes are in contact with the first substrate or the third substrate during rotation. Rotating one or more of the second scrubber brushes in the second brush cleaning machine during the third period, wherein the one or more of the second scrubber brushes are in contact with the second substrate or the fourth substrate during that time. The CMP system according to claim 16, further comprising the following steps.

19. The aforementioned instruction is given to the CMP system: During the first period, while rotating one or more of the first scrubber brushes, the first substrate cleaning fluid is introduced to the first substrate, During the second period, the second substrate cleaning fluid is introduced to one or more of the first scrubber brushes, The CMP system according to claim 16, further comprising the following steps.

20. The aforementioned instruction is given to the CMP system: Rotating the first scrubber brushes during the first period, while simultaneously rotating the first one or more scrubber brushes, wherein at least one conditioning bar is in contact with one or more of the first scrubber brushes during the rotation of the first one or more scrubber brushes. The CMP system according to claim 16, further comprising the following steps.

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