Heaters for semiconductor manufacturing, and related chamber kits and processing chambers.

Abstract

This disclosure relates to heaters for semiconductor manufacturing, as well as associated chamber kits and processing chambers. In one or more embodiments, a chamber kit applicable to semiconductor manufacturing includes a heater and a liner. The heater includes an arched heater body comprising one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode connected to the arched heater body and a second electrode connected to the arched heater body. The liner includes a ledge sized and molded to support the arched heater body, a first opening sized and molded to receive through and into at least a portion of the heater, and a second opening sized and molded to receive through and into at least a portion of the heater.

Description

Technical Field

[0001]

[0001] This disclosure relates to a heater for semiconductor manufacturing, as well as related chamber kits and processing chambers.

Background Art

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the manufacture of integrated circuit devices and microdevices. One way to process a substrate involves depositing a material, such as a semiconductor material or a conductive material, onto the upper surface of the substrate. For example, epitaxy is one deposition process that deposits films of various materials onto the surface of a substrate within a processing chamber. During processing, various parameters can potentially affect the uniformity of the material deposited on the substrate.

[0003]

[0003] However, processes (such as an epitaxial deposition process) can be long, expensive, inefficient, and potentially limited in capacity and throughput. Additionally, the hardware may require relatively large dimensions and may occupy a larger installation area within the manufacturing facility. Further, the processing can be accompanied by non-uniformity, which may lead to impairments in device performance and / or a decrease in throughput. For example, the activation of gases can be limited and / or accompanied by non-uniform activation. This can potentially result in limited and / or non-uniform film growth and / or dopant concentration.

[0004]

[0004] Therefore, there is a need for improved apparatus and methods in semiconductor processing.

Summary of the Invention

[0005]

[0005] This disclosure relates to a heater for semiconductor manufacturing, as well as related chamber kits and processing chambers.

[0006]

[0006] In one or more embodiments, a chamber kit applicable to semiconductor manufacturing includes a heater and a liner. The heater includes a heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode connected to the heater body and a second electrode connected to the heater body. The liner includes a ledge sized and molded to support the heater body, a first opening sized and molded to receive through and into at least a portion of the heater, and a second opening sized and molded to receive through and into at least a portion of the heater.

[0007]

[0007] In one or more embodiments, a chamber kit applicable to semiconductor manufacturing includes a heater and a liner. The heater includes a heater body including a first ring segment, a second ring segment spaced apart from the first ring segment, and a connector section between the first and second ring segments. The heater includes a first electrode connected to the heater body and a second electrode connected to the heater body. The chamber kit includes a liner including a ledge sized and molded to support the heater body.

[0008]

[0008] In one or more embodiments, a processing chamber applicable to use in semiconductor manufacturing includes a chamber body including an injection side and an exhaust side. The processing chamber includes a substrate support disposed within the processing space and a heater disposed adjacent to the injection side of the chamber body. The heater includes an arched heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode connected to the arched heater body and extending at least partially through the chamber body, and a second electrode connected to the arched heater body and extending at least partially through the chamber body.

[0009]

[0009] To enable a detailed understanding of the above-described features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments. Some of these embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, and other equally valid embodiments are also permissible. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. [Figure 2] This is a schematic partial top cross-sectional view of the processing chamber shown in Figure 1, according to one or more embodiments. [Figure 3] Figures 1 and 2 show a schematic perspective view of the first heater according to one or more embodiments. [Figure 4] This is a schematic front view of the first heater shown in Figure 3, according to one or more embodiments. [Figure 5] This is a schematic partial top view of the first heater of one or more heaters shown in Figure 1, according to one or more embodiments. [Figure 6] This is a schematic front view of the first heater shown in Figure 5, according to one or more embodiments. [Figure 7] This is a schematic partial top view of a first heater and a second heater according to one or more embodiments. [Figure 8] Figure 7 shows schematic front views of the first heater and the second heater according to one or more embodiments. [Figure 9] This is a schematic partial top view of a first heater and a second heater according to one or more embodiments. [Figure 10] This is a schematic partial top view of a first heater and a second heater according to one or more embodiments. [Figure 11] This is a schematic front view of the first heater shown in Figure 10, according to one or more embodiments. [Figure 12] It is a schematic partial top view of a first heater according to one or more embodiments. [Figure 13] It is a schematic partial cross-sectional side view of the first heater shown in FIG. 3 disposed in the processing chamber of FIG. 1 according to one or more embodiments. [Figure 14] It is a schematic partial cross-sectional side view of the first heater shown in FIG. 3 disposed in the processing chamber of FIG. 1 according to one or more embodiments. [Figure 15] It is a schematic partial cross-sectional side view of the first heater shown in FIG. 3 disposed in the processing chamber of FIG. 1 according to one or more embodiments. [Figure 16] It is a schematic block diagram of a method for substrate processing for semiconductor manufacturing according to one or more embodiments. [Figure 17] It is a schematic perspective view of a heater according to one or more embodiments. [Figure 18] It is a schematic front view of the heater shown in FIG. 17 according to one or more embodiments. [Figure 19] It is a schematic top view of the heater shown in FIGS. 17 and 18 according to one or more embodiments. [Figure 20] It is a schematic upper perspective of a heater according to one or more embodiments. [Figure 21] It is a schematic upper perspective of a heater according to one or more embodiments.

Embodiments for Carrying Out the Invention

[0011]

[0031] For ease of understanding, where possible, the same reference numbers have been used to denote the same elements common to the figures. It is assumed that the elements and features of one embodiment can be beneficially incorporated into other embodiments without further description.

[0012]

[0032] The present disclosure relates to heaters for semiconductor manufacturing, as well as related chamber kits and processing chambers.

[0013]

[0033] In the present disclosure, terms such as "connected" and "coupled" include, but are not limited to, joining, embedding, welding, melting, fusing, interference fitting, and / or fastening by use of bolts, screw connections, pins, and / or screws. In the present disclosure, terms such as "coupling" and "coupled" include, but are not limited to, integrally molding. In the present disclosure, terms such as "connected" and "coupled" include, but are not limited to, direct connection and / or indirect connection, for example, indirect connection through components such as links, blocks, and / or frames.

[0014]

[0034] FIG. 1 is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. An epitaxial film is grown on a substrate 102 using the processing chamber 100. The processing chamber 100 generates a cross flow of precursors across the upper surface 150 of the substrate 102. The processing chamber 100 is shown under the processing conditions of FIG. 1.

[0015]

[0035] The processing chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Inside the chamber body are a substrate support 106, an upper plate 108 (such as an upper window and / or upper dome), a lower plate 110 (such as a lower window and / or lower dome), and one or more heat sources 141, 143. One or more heat sources 141, 143 include a plurality of upper heat sources 141 and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure is intended to show that other heat sources may be used (in addition to or instead of the lamps) for the various heat sources described herein. For example, various heat sources described in this book may include resistance heaters, light-emitting diodes (LEDs), and / or lasers.

[0016]

[0036] A substrate support 106 is positioned between the upper plate 108 and the lower plate 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a susceptor. Other substrate supports (e.g., including a substrate carrier and / or one or more ring segments supporting one or more outer regions of the substrate 102) are contemplated by this disclosure. A plurality of upper heat sources 141 are positioned between the upper plate 108 and the lid 154. The plurality of upper heat sources 141 form part of an upper heat source module 155.

[0017]

[0037] Multiple lower heat sources 143 are positioned between the lower plate 110 and the floor 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The upper plate 108 is made of an energy-permeable material such as quartz. The lower plate 110 is made of an energy-permeable material such as quartz.

[0018]

[0038] A processing space 136 and a purge space 138 are formed between the upper plate 108 and the lower plate 110. The processing space 136 and the purge space 138 are part of the internal space at least partially defined by the upper plate 108, the lower plate 110, and one or more liners 111, 163. In one or more embodiments, the processing space 136 is the processing space. One or more liners 111, 163 are located inside the chamber body.

[0019]

[0039] The internal space has a substrate support 106 disposed therein. The substrate support 106 includes an upper surface on which the substrate 102 is placed. The substrate support 106 is attached to the shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106 within the processing space 136.

[0020]

[0040] The substrate support 106 may include lift pin holes 107 located therein. Each lift pin hole 107 is sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 before or after the deposition process. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from the processing position to the moving position. The lift pin stops 134 may include a plurality of arms 139 attached to a shaft 135.

[0021]

[0041] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas exhaust ports 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust ports 116. A preheating ring 501 is located below the one or more gas inlets 114 and the one or more gas exhaust ports 116. The preheating ring 501 is located above the one or more purge gas inlets 164. One or more liners 111, 163 are located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during the deposition and / or cleaning processes. One or more gas inlets 114 and one or more purge gas inlets 164 are arranged to flow one or more process gases P1 and one or more purge gases P2, respectively, parallel to the upper surface 150 of the substrate 102 located in the processing space 136. The gas inlets 114 are fluidically connected to one or more process gas sources 151 and one or more cleaning gas sources 153. One or more purge gas inlets 164 are fluidically connected to one or more purge gas sources 162. One or more gas exhaust ports 116 are fluidically connected to an exhaust pump 157. One or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases P2 supplied using one or more purge gas sources 162 may contain one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more washing gases supplied using one or more washing gas sources 153 may contain one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases P1 contain silicon phosphide (SiP) and / or phosphorus (PH3), and one or more washing gases contain hydrochloric acid (HCl).

[0022]

[0042] One or more gas exhaust ports 116 are further connected to or include an exhaust system 109. The exhaust system 109 fluidly connects one or more gas exhaust ports 116 to an exhaust pump 157. The exhaust system 109 may be useful when controlling the deposition of layers on the substrate 102. The exhaust system 109 is located in the processing chamber 100 on the opposite side from the flow module 112.

[0023]

[0043] The processing chamber 100 includes one or more liners 111, 163 (e.g., a lower liner 111 and an upper liner 163). A flow module 112 (which may be at least part of the side wall of the processing chamber 100) includes one or more gas inlets 114 that are in fluid communication with the processing space 136. One or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. One or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of the upper liner 163.

[0024]

[0044] During the deposition operation (e.g., epitaxial growth operation), one or more processing gases P1 flow through one or more gas inlets 114, through one or more gaps, into the processing space 136, and over the substrate 102.

[0025]

[0045] The disclosure also intends that during the loading operation, one or more purge gases P2 may be supplied to and discharged from the purge space 138 (via one or more purge gas inlets 164). One or more purge gases P2 flow simultaneously with the flow of one or more treatment gases P1. One or more treatment gases P1 are exhausted through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust ports 116. One or more purge gases P2 may be exhausted through one or more outlet openings and through the same one or more gas exhaust ports 116 as the one or more treatment gases P1. The disclosure also intends that one or more purge gases P2 may be exhausted separately through one or more second gas exhaust ports separated from the one or more gas exhaust ports 116.

[0026]

[0046] During the cleaning process, one or more cleaning gases flow into the processing space 136 through one or more gas inlets 114 and through one or more gaps (between the upper liner 163 and the lower liner 111).

[0027]

[0047] One or more heaters 500a, 500b can be controlled to heat one or more processing gases P1 (and / or cleaning gases) to facilitate the breakdown of bonds for deposition on the substrate 102. For example, one or more heaters 500a, 500b can heat one or more processing gases P1 before and after they flow over the substrate 102. Alternatively, one or more heaters 500a, 500b can heat one or more processing gases P1 in a region adjacent to the outer annular region of the substrate 102. In one or more embodiments, one or more heaters 500a, 500b include a plurality of heaters 500a, 500b (two are shown in Figure 1) arranged on opposing sides of the processing space 136. This disclosure assumes that one or both of the heaters 500a, 500b may be used. In addition to, or instead of, one or more heaters 500a, 500b, one or more heaters 200a, 200b are at least partially covered and / or supported by one or more liners 111, 163. One or more heaters 200a, 200b may be controlled to heat one or more process gases P1 (and / or cleaning gases). In one or more embodiments, one or more heaters 200a, 200b include a plurality of heaters 200a, 200b (two are shown in Figure 1) arranged on opposing sides of the process space 136. This disclosure assumes that one or both of the heaters 200a, 200b may be used. This disclosure intends that one or more heaters 500a, 500b may be used in place of the preheating ring 501, or that one or more heaters 500a, 500b may be used in addition to the preheating ring 501. As an example, one or more heaters 500a, 500b and / or other heaters may be positioned above or below the preheating ring 501. The second lower liner 113 is at least partially supported by the lower liner 111, and the second lower liner 113 at least partially covers and / or supports one or more heaters 200a, 200b.In one or more embodiments using the lower liner 111 and the second lower liner 113, at least a portion of the entire exterior of each heater 200a, 200b is covered and isolated from one or more processing gases P1 and / or cleaning gases.

[0028]

[0048] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure parameters (e.g., temperature) within the processing chamber 100. In one or more embodiments, one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more outer sensor devices 195, 197, 198. A controller 190 (described later) can control one or more sensor devices 195, 196, 197, 198 and can use at least one of the sensor devices 195, 196, 197, 198 to perform a method(s) for analyzing the uniformity of substrate processing. In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a sensor containing one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, each sensor device 195, 196, 197, 198 is an optical sensor such as a pyrometer and / or an optical pyrometer. The disclosure intends that sensor devices other than pyrometers may be used, and / or that one or more of the sensor devices 195, 196, 197, 198 may measure characteristics other than temperature (such as measurement characteristics).

[0029]

[0049] In one or more embodiments, the sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 positioned above the substrate 102 and adjacent to the lid 154, and one or more lower sensor devices 195 positioned below the substrate 102 and adjacent to the floor 152. The disclosure intends that at least one of the one or more lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 196, 197 (e.g., outer sensor device 197).

[0030]

[0050] Each of the sensor devices 195, 196, 197, and 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, and 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensor devices in addition to the sensor devices 195, 196, 197, and 198. In one or more embodiments, the processing chamber 100 may include sensor devices positioned and / or oriented differently from the illustrated sensor devices 195, 196, 197, and 198.

[0031]

[0051] As shown in the figure, the controller 190 communicates with the processing chamber 100 and is used to control processes and methods, such as the operation of the method described herein. The controller 190 is configured to receive data or input as sensor readings from sensors (e.g., one or more of the sensor devices 195, 196, 197, 198). The sensor devices may include, for example, a sensor device that monitors the growth of one or more layers on the substrate 102, and / or a sensor device that monitors the temperature of the substrate 102, one or more heaters 200a, 200b, one or more heaters 500a, 500b, substrate support 106, and / or liners 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 can measure the temperature of one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, and the power to one or more heaters 200a, 200b and / or one or more heaters 500a, 500b can be controlled (e.g., using feedback control) based on the measured temperature. As described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) are arranged to measure the temperature of one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, and the power to one or more heaters 200a, 200b and / or one or more heaters 500a, 500b may be controlled (e.g., using feedback control) based on the measured temperature.

[0032]

[0052] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuitry 192 for the CPU 193. The controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicably connected to a dedicated controller, and the controller 190 functions as a central controller.

[0033]

[0053] The controller 190 is any form of general-purpose computer processor used in an industrial environment to control various board processing chambers and devices, as well as subprocessors on or within them. The memory 191, or non-transient computer-readable medium, is one or more readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic memory (SDRAM) (e.g., DDR1, DDR2, DDR3, LPDDR3, DDR4, LPDDR4, etc.), read-only memory (ROM), floppy disks, hard disks, flash drives, or any other digital storage (local or remote). The support circuit 192 of the controller 190 is connected to the CPU 193 to support the CPU 193. The support circuit 192 includes cache, power supply, clock circuit, input / output circuit and subsystems, etc. Operating parameters (e.g., power supplied to one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, power applied to heat sources 141, 143, cleaning recipes, and / or processing recipes), and operations are stored in memory 191 as software routines that are executed or called to transform the controller 190 into a controller for specific purposes to control the operation of the various chambers / modules described herein. The controller 190 is configured to perform any of the processes described herein. When the instructions stored in memory are executed, they cause the processing chamber 100 to perform one or more of the processes described herein. The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.

[0034]

[0054] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually using specific operations performed by the user.

[0035]

[0055] The controller 190 is configured to control power to one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing output to sensor devices 195, 196, 197, 198, one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, an upper heat source 141, a lower heat source 143, a processing gas source 151, a purge gas source 162, a motion assembly 121, and / or an exhaust pump 157.

[0036]

[0056] In one or more embodiments, the power supplied to heaters 200a, 200b and / or one or more heaters 500a, 500b includes alternating current (AC) in the range of 16 amperes to 64 amperes (e.g., 16 amperes to 32 amperes). In one or more embodiments, the power has a voltage of 360 volts or less. During processing, in one or more embodiments, heaters 200a, 200b and / or one or more heaters 500a, 500b are heated to a target heater temperature of 400°C or higher, for example, 600°C or higher, for example, in the range of 750°C to 850°C. During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 400°C or higher, or 600°C or lower. In one or more embodiments, the target temperature of substrate 102 is in the range of 380°C to 600°C, for example, in the range of 400°C to 500°C. In one or more embodiments, the target temperature of the substrate 102 is less than 500 degrees Celsius. In one or more embodiments, the target temperature of the substrate 102 is 400 degrees Celsius or less. In one or more embodiments, the target temperature of the substrate 102 is lower than the target heater temperature.

[0037]

[0057] Figure 2 is a schematic partial top cross-sectional view of the processing chamber 100 shown in Figure 1, according to one or more embodiments. For visual clarity, the flow module 112 and the preheating ring 501 are schematically shown in Figure 2 without hatching.

[0038]

[0058] In Figure 2, the preheating ring 501 is shown as a ghost for visual clarity, as a single ring segment (e.g., a ring with a notch). One or more heaters 500a, 500b shown in Figure 1 are described further below in relation to Figures 5 and 6.

[0039]

[0059] The first heater 200a is positioned adjacent to the injection side of the processing space 136, and the second heater 200b is positioned adjacent to the exhaust side of the processing space 136.

[0040]

[0060] Figure 3 is a schematic perspective view of the first heater 200a shown in Figures 1 and 2, according to one or more embodiments. The second heater 200b may include one or more embodiments, features, components, operations, and / or characteristics of the first heater 200a.

[0041]

[0061] The first heater 200a includes an arched heater body 201 which includes one or more first sections 202 (shown as multiple), one or more second sections 203 (shown as multiple), and one or more connector sections 204 (shown as multiple). The connector sections 204 connect the first sections 202 to the second sections 203, respectively. The first heater 200a includes a first electrode 206 connected to the arched heater body 201 and a second electrode 207 connected to the arched heater body 201. Referring back to Figure 1, the lower liner 111 includes a ledge 208 which is sized and molded to at least partially support and / or cover the arched heater body 201. The first electrode 206 and the second electrode 207 are shown hypothetically for one heater 200b in Figure 1 for visual clarity. Referring back to Figure 2, the lower liner 111 includes a first opening 209 sized and molded to receive through at least a portion of the first heater 200a, and a second opening 210 sized and molded to receive through at least a portion of the first heater 200a. In one or more embodiments, the first electrode 206 and / or the second electrode 207 have an outer diameter of 20 mm or less. This disclosure assumes that the heater body described herein may have shapes other than arches, such as rectangular (e.g., semi-rectangular), square (e.g., semi-square), zigzag (e.g., meandering), polygonal (e.g., semi-polygonal), angled, and / or linear. Other shapes are also assumed.

[0042]

[0062] Referring again to Figure 3, the first heater 200a includes a first flange portion 211 connected to a first electrode 206 and a second flange portion 212 connected to a second electrode 207. One or more first sections 202 include a plurality of first sections 202 spaced apart from each other by a plurality of first openings 213, and one or more second sections 203 include a plurality of second sections 203 spaced apart from each other by a plurality of second openings 214. The plurality of first openings 213 and the plurality of second openings 214 are arranged alternately with respect to each other along the arch length of the arched heater body 201.

[0043]

[0063] The first electrode 206 and the second electrode 207 are connected, respectively, to the second sections 203a and 203b at a pair of ends of a plurality of second sections 203, through the first flange portion 211 and the second flange portion 212. The arched heater body 201 has a body profile BP1 that includes a plurality of reverse turns in the arch surface AP1 extending through at least some of the plurality of first sections 202 and the plurality of second sections 203. During heating of the heaters 200a and 200b, current flows from the first electrode 206 through the arched heater body 201 to the second electrode 207, and the second electrode 207 heats the arched heater body 201 in a resistive manner. Voltage can be generated and / or supplied to the arched heater body 201.

[0044]

[0064] In one or more embodiments, the arched heater body 201, the first electrode 206, and the second electrode 207 are formed of silicon carbide (SiC). In one or more embodiments, the arched heater body 201, the first electrode 206, and the second electrode 207 include heating elements (e.g., metal lines, wires (e.g., metal wires such as copper wires), metal meshes, and / or metal rods) embedded in opaque quartz (e.g., white quartz, gray quartz, and / or black quartz) or transparent material (e.g., clear quartz). In one or more embodiments, the arched heater body 201, the first electrode 206, and the second electrode 207 are formed of SiC-coated graphite. The heating elements can be wound around an inductor in a transparent material. Thus, the heaters 200a, 200b can be resistance heaters, induction heaters, and / or radiant heaters.

[0045]

[0065] Figure 4 is a schematic front view of the first heater 200a shown in Figure 3, according to one or more embodiments.

[0046]

[0066] Figure 5 is a schematic partial top view of the first heater 500a of one or more heaters 500a, 500b shown in Figure 1, according to one or more embodiments. The first heater 500a includes one or more embodiments, features, components, operation, and / or characteristics of the first heater 200a shown in Figures 1 to 4. The second heater 500b may include one or more embodiments, features, components, operation, and / or characteristics of the first heater 500a.

[0047]

[0067] The first heater 500a comprises an arched heater body 501, which includes one or more first sections 502 (a single first section 502 is shown), one or more second sections 503 (a single second section 503 is shown), one or more third sections 505 (a single third section 505 is shown), and one or more connector sections 504a, 504b (multiple are shown). The connector sections 504a, 504b connect the first section 502, the second section 503, and the third section 505 to each other, respectively. One or more first sections 502 include a first ring segment 511, and one or more second sections 503 include a second ring segment 512 spaced apart from the first ring segment 511 along the radial direction RD1. One or more third sections 505 include a third ring segment 513 spaced apart from the second ring segment 512 along the radial RD1.

[0048]

[0068] One or more connector sections 504a, 504b include a first connector section 504a between the end of the first ring segment 511 and the first end of the second ring segment 512, and a second connector section 504b between the second end of the second ring segment 512 and the end of the third ring segment 513. A flange portion 515 connected to the first ring segment 511 is connected to the first electrode 206. The arched heater body 501 has a body profile BP2 that includes a plurality of folded portions in a plane PL1 extending through the first ring segment 511, the second ring segment 512, and the third ring segment 513.

[0049]

[0069] Figure 6 is a schematic front view of the first heater 500a shown in Figure 5, according to one or more embodiments.

[0050]

[0070] Figure 7 is a schematic partial top view of a first heater 700 and a second heater 750 according to one or more embodiments.

[0051]

[0071] Figure 8 is a schematic front view of the first heater 700 and the second heater 750 shown in Figure 7, according to one or more embodiments.

[0052]

[0072] Instead of the first heater 500a shown in Figure 1, a first heater 700 and a second heater 750 may be installed. The first heater 700 and the second heater 750 include one or more embodiments, features, components, operations, and / or characteristics of the first heater 200a shown in Figures 1 to 4. Instead of the second heater 500b shown in Figure 1, two heaters similar to the first heater 700 and the second heater 750 may be installed on the exhaust side of the processing space 136. In this disclosure, it is assumed that the heaters 700 and 750 may have different body profiles. For example, in the top view shown in Figure 7 and / or the front view shown in Figure 8, the heaters 700 and 750 may have the body profile BP1 shown in the front view in Figure 4 and the perspective view in Figure 3.

[0053]

[0073] The first heater 700 includes a first heater body 701 which includes a first ring segment 702, a second ring segment 703 spaced apart from the first ring segment 702, and a connector section 704 between the first ring segment 702 and the second ring segment 703. The first heater 700 includes a first electrode 206 connected to the first heater body 701 and a second electrode 207 connected to the first heater body 701. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and molded to at least partially support and / or cover the first heater body 701 (such as the second ring segment 703 of the first heater body 701). The first ring segment 702 and the second ring segment 703 have an azimuth angle AA1 between their two ends, the azimuth angle AA1 being less than 90 degrees.

[0054]

[0074] The second heater 750 includes a second heater body 751 which includes a third ring segment 752, a fourth ring segment 753 spaced apart from the third ring segment 752, and a second connector section 754 between the third ring segment 752 and the fourth ring segment 753. The second heater 750 also includes a third electrode 756 connected to the second heater body 751 and a fourth electrode 757 connected to the second heater body 751.

[0055]

[0075] Figure 9 is a schematic partial top view of a first heater 900 and a second heater 950 according to one or more embodiments.

[0056]

[0076] Instead of the first heater 500a shown in Figure 1, a first heater 900 and a second heater 950 can be provided. The first heater 900 and the second heater 950 include one or more embodiments, features, components, operations, and / or characteristics of the first heater 700 and the second heater 750 shown in Figures 7 and 8. Instead of the second heater 500b shown in Figure 1, two heaters similar to the first heater 900 and the second heater 950 can be provided on the exhaust side of the processing space 136.

[0057]

[0077] The first heater 900 includes a first heater body 901 which includes a first ring segment 902, a second ring segment 903 spaced apart from the first ring segment 902, and a connector section 904 between the first ring segment 902 and the second ring segment 903. The first heater 900 includes a first electrode 206 connected to the first heater body 901 and a second electrode 207 connected to the first heater body 901. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and molded to at least partially support and / or cover the first heater body 901 (e.g., the second ring segment 903 of the first heater body 901).

[0058]

[0078] The second heater 950 includes a second heater body 751 which includes a third ring segment 952, a fourth ring segment 953 spaced apart from the third ring segment 952, and a second connector section 954 between the third ring segment 952 and the fourth ring segment 953. The second heater 950 also includes a third electrode 756 connected to the second heater body 951 and a fourth electrode 757 connected to the second heater body 951. This disclosure intends that the heaters 900 and 950 may have different body profiles. For example, in the top view shown in Figure 9, the heaters 900 and 950 may have the body profile BP1 shown in the front view in Figure 4 and the perspective view in Figure 3.

[0059]

[0079] Figure 10 is a schematic partial top view of a first heater 1000a and a second heater 1000b according to one or more embodiments.

[0060]

[0080] Figure 11 is a schematic front view of the first heater 1000a shown in Figure 10, according to one or more embodiments.

[0061]

[0081] Instead of the first heater 500a and second heater 500b shown in Figure 1, the first heater 1000a and second heater 1000b can be used. The first heater 1000a and second heater 1000b include one or more embodiments, features, components, operation, and / or characteristics of the first heater 200a shown in Figures 1 to 4. The second heater 1000b may include one or more embodiments, features, components, operation, and / or characteristics of the first heater 1000a. Instead of the first heater 500a and second heater 500b shown in Figure 1, the first heater 1000a and second heater 1000b can be used.

[0062]

[0082] The first heater 1000a comprises a first heater body 1001, the first heater body including a first ring segment 1002, a second ring segment 1003 spaced apart from the first ring segment 1002, and a connector section 1004 between the first ring segment 1002 and the second ring segment 1003. The first heater 1000a includes a first electrode 206 connected to the first heater body 1001 and a second electrode 207 connected to the first heater body 1001. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and molded to at least partially support and / or cover the first heater body 701 (e.g., the second ring segment 1003 of the first heater body 1001). The first ring segment 1002 and the second ring segment 1003 have an azimuth angle AA2 between their two ends, and the azimuth angle AA2 is in the range of 90 to 180 degrees. The present disclosure intends that heaters 1000a and 1000b may have different body profiles. For example, in the top view shown in Figure 10 and / or the front view shown in Figure 11, heaters 1000a and 1000b may have the body profile BP2 shown in the top view of Figure 5.

[0063]

[0083] Figure 12 is a schematic partial top view of a first heater 1200a according to one or more embodiments. A second heater 1200b may include one or more embodiments, features, components, operations, and / or characteristics of the first heater 1200a.

[0064]

[0084] Instead of the first heater 500a and second heater 500b shown in Figure 1, a first heater 1200a and a second heater 1200b can be arranged. The first heater 1200a and second heater 1200b include one or more embodiments, features, components, operations, and / or characteristics of the first heater 1000a and second heater 1000b shown in Figures 10 and 11.

[0065]

[0085] The first heater 1200a includes a first heater body 1201 which includes a first ring segment 1202, a second ring segment 1203 spaced apart from the first ring segment 1202, and a connector section 1204 between the first ring segment 1202 and the second ring segment 1203. The first heater 1200a includes a first electrode 206 connected to the first heater body 1201 and a second electrode 207 connected to the first heater body 1201. In one or more embodiments, a ledge 208 of the lower liner 111 is sized and molded to support the first heater body 901 (such as the second ring segment 1203 of the first heater body 1201).

[0066]

[0086] Figure 13 is a schematic partial cross-sectional side view of the first heater 200a shown in Figure 3, which is located inside the processing chamber 100 of Figure 1, according to one or more embodiments.

[0067]

[0087] As shown for the first electrode 206 in Figure 13, both the first electrode 206 and the second electrode 207 extend at least partially through the chamber body (such as the flow module 112). In one or more embodiments, the first electrode 206 and the second electrode 207 extend through the chamber body to the outside of the atmospheric pressure of the chamber body. Seals 1301 are positioned around each of the first electrode 206 and the second electrode 207 to fluidly separate the outside of the atmosphere from the vacuum side of the chamber body. In one or more embodiments, the first electrode 206 and the second electrode 207 are formed of the same material as the arched heater body 201. In one or more embodiments, the first electrode 206 and the second electrode 207 are formed of SiC. Electrical wires 1303 are connected to the first electrode 206 and the second electrode 207, respectively. As described above, the first electrode 206 and the second electrode 207 are connected (for example, coupled) to the arch-shaped heater body 201.

[0068]

[0088] Figure 14 is a schematic partial cross-sectional side view of the first heater 200a shown in Figure 3, which is located inside the processing chamber 100 of Figure 1, according to one or more embodiments.

[0069]

[0089] As shown in Figure 14, the quartz sleeve 1410 is positioned around the first electrode 206 and the second electrode 207, respectively. In one or more embodiments, the quartz sleeve 1410 is formed of transparent or opaque quartz. In one or more embodiments, the arched heater body 201 is embedded in the same quartz material as the quartz sleeve 1410. In one or more embodiments, the quartz sleeve 1410 is coupled (e.g., joined) to the arched heater body 201 and / or the first electrode 206. A seal 1301 may be positioned between the chamber body (e.g., flow module 112) and the shoulder 1415 of the quartz sleeve 1410. The shoulder 1415 may abut against the chamber body.

[0070]

[0090] Figure 15 is a schematic partial cross-sectional side view of the first heater 200a shown in Figure 3, which is located inside the processing chamber 100 of Figure 1, according to one or more embodiments.

[0071]

[0091] As shown in Figure 15, the first electrode 206 and the second electrode 207 are housed in their respective electrical sockets 1505 of the hermetically sealed feedthrough assembly 1510. The seal 1301 may be positioned between the chamber body (e.g., the flow module 112) and the shoulder 1515 of the socket housing 1520. The shoulder 1515 may abut against the chamber body.

[0072]

[0092] Figure 16 is a schematic block diagram of a substrate processing method 1600 for semiconductor manufacturing according to one or more embodiments.

[0073]

[0093] Step 1601 includes positioning the substrate on a substrate support within the processing space of the processing chamber. In one or more embodiments, positioning includes moving the substrate support and / or a plurality of lift pins relative to each other in order to place the substrate on the substrate support.

[0074]

[0094] Step 1602 of Method 1600 includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or less.

[0075]

[0095] Step 1604 includes passing one or more treatment gases.

[0076]

[0096] Step 1606 includes preheating one or more process gases. The one or more process gases flow over one or more of the heaters described herein, which preheat and preactivate the one or more process gases. The one or more process gases then flow over the substrate to form one or more layers on the substrate.

[0077]

[0097] Figure 17 is a schematic perspective view of heater 1700 according to one or more embodiments. Heater 1700 may include one or more embodiments, features, components, operations, and / or characteristics of the first heater 200a and / or the first heater 500a. Heater 1700 can be used in place of the first heater 200a, the second heater 200b, the first heater 500a, and / or the second heater 500b.

[0078]

[0098] The heater 1700 includes an arched heater body 1701 which includes one or more first sections 1702(indicating multiple), one or more second sections 1703(indicating multiple), and one or more connector sections 1704(indicating multiple). The connector sections 1704 connect the first sections 1702 to the second sections 1703, respectively. The heater 1700 includes a first electrode 206 connected to the arched heater body 1701 and a second electrode 207 connected to the arched heater body 1701.

[0079]

[0099] The first heater 200a includes a first flange portion 1711 connected to a first electrode 206 via a first extension 1721, and a second flange portion 1712 connected to a second electrode 207 via a second extension 1722. One or more first sections 1702 include a plurality of first sections 1702 spaced apart from each other by a plurality of first openings 1713, and one or more second sections 1703 include a plurality of second sections 1173 spaced apart from each other by a plurality of second openings 1714. The plurality of first openings 1713 and the plurality of second openings 1714 are arranged alternately with respect to each other along the arch length of the arched heater body 1701.

[0080]

[0100] The first flange portion 1711 and the second flange portion 1712 are connected to a pair of ends 1723 and 1724 of the arched heater body 1701, respectively. In one or more embodiments, the end sections 1723 and 1724 each have a radial width extending to the first section 1702, the second section 1703, and the connector section 1704. The arched heater body 1701 has a body profile BP3 that includes multiple reverse turns in a plane PL2 (a horizontal plane such as the XY plane) extending through at least some of the multiple first sections 1702 and the multiple second sections 1703. In one or more embodiments, the plane PL2 extends through the first section 1702, the second section 1703, the connector section 1704, and the end sections 1723 and 1724. During heating of the heater 1700, current flows from the first electrode 206 through the arched heater body 1701 to the second electrode 207, and the second electrode 207 heats the arched heater body 1701 in a resistive manner. A voltage can be generated and / or supplied to the arched heater body 701.

[0081]

[0101] In one or more embodiments, the arched heater body 1701, the first electrode 206, and the second electrode 207 are made of silicon carbide (SiC). In one or more embodiments, the arched heater body 1701, the first electrode 206, and the second electrode 207 include heating elements (e.g., metal wires, wires (e.g., metal wires such as copper wires), metal meshes, and / or metal rods) formed and embedded in opaque quartz (e.g., white quartz, gray quartz, and / or black quartz) or transparent material (e.g., clear quartz). In one or more embodiments, the arched heater body 1701, the first electrode 206, and the second electrode 207 are formed from SiC-coated graphite. The heating elements may be wound around an inductor in the transparent material. Thus, the heater 1700 can be a resistance heater, an induction heater, and / or a radiant heater. Figure 18 is a schematic front view of the heater 1700 shown in Figure 17 according to one or more embodiments.

[0082]

[0102] Figure 19 is a schematic top view of the heater 1700 shown in Figures 17 and 18, according to one or more embodiments.

[0083]

[0103] Connector section 1704 extends radially along the radial direction RD2. The first section 1702 and the second section 1703 extend in the azimuthal direction with respect to the radial direction RD2.

[0084]

[0104] Connector sections 504a and 504b connect the first section 502, the second section 503, and the third section 505 to each other, respectively. One or more first sections 502 include a first ring segment 511, and one or more second sections 503 include a second ring segment 512 spaced apart from the first ring segment 511 along the radial RD1. One or more third sections 505 include a third ring segment 513 spaced apart from the second ring segment 512 along the radial RD1.

[0085]

[0105] The arched heater body 1701 has an azimuth angle AA2 between its two ends (e.g., the outer ends of end sections 1723 and 1724), and the azimuth angle AA3 is in the range of 90 to 180 degrees. In one or more embodiments, the azimuth angle AA3 is greater than 90 degrees (e.g., greater than 120 degrees) and less than 180 degrees.

[0086]

[0106] Figure 20 is a schematic top-perspective view of heater 2000 according to one or more embodiments. Heater 2000 may include one or more embodiments, features, components, operations, and / or characteristics of the first heater 200a and / or the first heater 500a. Heater 2000 can be used in place of the first heater 200a, the second heater 200b, the first heater 500a, and / or the second heater 500b.

[0087]

[0107] Heater 2000 is similar to heater 1700 shown in Figures 17-19, and includes one or more aspects, features, components, characteristics, and / or operations thereof. Each first section 1702, each second section 1703, each first opening 1713, and each second opening 1714 are grouped into several sets 2001-2003 (three sets are shown). The first set 2001 and the third set 2003 include a pair of first sections 1702a, 1702b of ends, and the second set 2002 includes a pair of second sections 1703a, 1703b of ends.

[0088]

[0108] The arched heater body 2010 of heater 2000 has a body profile BP4 that includes multiple reverse turns in a plane PL2 (e.g., a horizontal plane such as the XY plane) extending through at least some of the multiple first sections 1702 and multiple second sections 1703. The reverse turns are grouped into multiple sets 2001-2003. The body profile BP4 includes arched sections in the azimuthal direction between sets 2001-2003. The arched heater body 2010 includes azimuthal solid sections 2004, 2005 (e.g., arched solid sections) between sets 2001-2003 of sections 1702, 1703. The solid sections 2004, 2005 may have, for example, a solid cross-section (e.g., a solid rectangular cross-section). The solid sections 2004, 2005 may omit the first opening 1713 and the second opening 1714. In one or more embodiments, the first group 2001 and the third group 2033 are aligned with the outer heating zone, and the second group 2002 is aligned with the inner heating zone. In one or more embodiments, the solid sections 2004 and 2005 are aligned with the intermediate heating zone between the inner and outer heating zones. The heating zones may correspond to the processing zones of the substrate being processed. In one or more embodiments, sets 2001 to 2003 include heating zones that heat to a higher temperature than the heating zones of the solid sections 2004 and 2005. For example, a gas(s) with a higher activation temperature may flow over the zones of sets 2001 to 2003, and a gas(s) with a lower activation temperature may flow over the zones of the solid sections 2004 and 2005. The present disclosure is intended to allow fewer folded sections to be used for lower operating temperatures and more folded sections to be used for higher operating temperatures.

[0089]

[0109] This disclosure assumes that multiple gases, including multiple activation temperatures, may flow into each heating zone (see, for example, Figure 21). Figure 20 shows three sets 2001–2003 corresponding to three high heating zones and two solid sections 2004, 2005 corresponding to two low heating zones. This disclosure intends that different (e.g., higher or lower) numbers of sets and higher heating zones may be used, and / or different (e.g., higher or lower) numbers of solid sections and lower heating zones may be used.

[0090]

[0110] Figure 21 is a schematic top-perspective view of heater 2100 according to one or more embodiments. Heater 2100 may include one or more embodiments, features, components, operations, and / or characteristics of the first heater 200a and / or the first heater 500a. Heater 2100 can be used in place of the first heater 200a, the second heater 200b, the first heater 500a, and / or the second heater 500b.

[0091]

[0111] Heater 2100 is similar to heater 2000 shown in Figure 20, and includes one or more aspects, features, components, characteristics, and / or operation thereof. Each first section 1702, each second section 1703, each first opening 1713, and each second opening 1714 are grouped into several sets 2101 to 2107 (seven sets are shown). Each of the seven sets 2101 to 2107 includes an end first section 1702a and an end second section 1703a.

[0092]

[0112] The arched heater body 2110 of the heater 2100 has a body profile BP5 that includes a plurality of folded sections in the plane PL2. The folded sections are grouped into a plurality of sets 2101 to 2107. The body profile BP5 includes arched sections in the azimuthal direction between sets 2101 to 2107. The arched heater body 2110 includes azimuthal solid sections 2111 to 2116 (e.g., arched solid sections) between sets 2101 to 2107 of sections 1702, 1703. The solid sections 2111 to 2116 may have, for example, a solid cross-section (such as a one-piece rectangular cross-section). In one or more embodiments, the first set 2101 and the seventh set 2107 are aligned with the outer heating zone, and the fourth set 2104 is aligned with the inner heating zone. In one or more embodiments, the first solid section 2111 and the sixth solid section 2116 are aligned with the outer heating zone, and the third solid section 2113 and the fourth solid section 2114 are aligned with the inner heating zone. In one or more embodiments, the second solid section 2112 and the fifth solid section 2115 are aligned with the intermediate heating zone. Sets and / or solid sections (e.g., the second set 2102 and the third set 2103 shown in Figure 21) may partially overlap with multiple heating zones. Two or more processing gases PG1, PG2, each containing two or more activation temperatures, flow into the heating zones, respectively.

[0093]

[0113] Figure 22 is a schematic partial cross-sectional side view of the first heater 200a shown in Figure 3, arranged within the processing chamber 100 of Figure 1, according to one or more embodiments. The mounting configuration shown in Figure 22 is similar to the mounting configuration shown in Figure 13, and includes one or more aspects, features, components, operation, and / or characteristics thereof. Figure 22 shows a hybrid electrode of metal and SiC.

[0094]

[0114] This disclosure intends to allow for the omission of the seal 1301. The metal line 2203 is connected to the first electrode 206 and the second electrode 207. The metal line 2203 is formed of a metallic material (such as copper and / or aluminum), the first and second electrodes 206 and 207 are formed of SiC, and the first and second flange portions 211 and 212 are formed of SiC. Various metallic materials are envisioned for the metal line 2203. In one or more embodiments, the metallic material has a coefficient of thermal expansion within a range of 50% or less of the difference in thermal expansion coefficient of the SiC of the first electrode 206 and the second electrode 207. In one or more embodiments, the first electrode 206 and the second electrode 207 are coupled to an arched heater body 201, and the electrical line 2203 is brazed to the first electrode 206 and the second electrode 207.

[0095]

[0115] The advantages of this disclosure include reliable gas activation, adjustable gas activation, modularity in chamber applications, more uniform gas activation, temperature uniformity (e.g., temperature uniformity in the outer region of the substrate), reduced gas consumption and gas waste, improved growth rate, and more uniform film growth and / or dopant concentration. Advantages also include improved heater ductility, improved heater thermal shock resistance, and increased heater heating rate (e.g., 4-5°C or higher).

[0096]

[0116] The advantages also include improved device performance, more efficient processing, and increased throughput. For example, gas activation is facilitated for substrate target temperatures below 500 degrees Celsius, such as target temperatures in the range of 380 to 500 degrees Celsius. For instance, the gas can activate the substrate to over 500 degrees Celsius when the substrate is at approximately 400 degrees Celsius.

[0097]

[0117] It is assumed that one or more embodiments disclosed herein may be combined. For example, one or more embodiments, features, components, operations, and / or characteristics can be combined for the processing chamber 100; controller 190; one or more sensor devices 195, 196, 197, 198; one or more heaters 200a, 200b; one or more preheating rings 501; one or more heaters 500a, 500b; one or more heaters 700, 750; one or more heaters 900, 950; one or more heaters 1000a, 1000b; one or more heaters 1200a, 1200b; seal 1301; quartz sleeve 1410; airtight feedthrough assembly 1510; one or more heaters 1700, one or more heaters 2000, and / or one or more heaters 2100. Furthermore, it is assumed that one or more aspects disclosed herein may include some or all of the aforementioned advantages.

[0098]

[0118] In this disclosure, it is assumed that in any of the heater configurations herein, electrodes 206 and 207 can be arranged on the same plane (e.g., at the same height) as shown, for example in Figures 3, 4, and 18, or on different planes (e.g., the top and bottom surfaces) as shown, for example in Figures 8 and 11.

[0099]

[0119] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. A chamber kit applicable to semiconductor manufacturing, It is a heater, A heater body comprising one or more first sections, one or more second sections, and one or more connector sections, A first electrode connected to the heater body, A second electrode connected to the heater body, A heater equipped with, It's Raina, A ledge sized and molded to support the heater body, A first opening, sized and molded to receive through at least a portion of the heater, A second opening, sized and molded to receive through at least a portion of the heater, A liner equipped with A chamber kit including this.

2. The chamber kit according to claim 1, wherein the one or more first sections include a plurality of first sections spaced apart from each other by a plurality of first openings, and the one or more second sections include a plurality of second sections spaced apart from each other by a plurality of second openings.

3. The chamber kit according to claim 2, wherein the plurality of first openings and the plurality of second openings are arranged alternately with respect to one another along the length of the heater body, the first sections and the second sections are grouped into a plurality of sets, and the heater body further includes one or more solid sections in the azimuthal direction between the plurality of sets.

4. The chamber kit according to claim 2, wherein the first electrode and the second electrode are connected to the first flange portion and the second flange portion of the heater, respectively.

5. The chamber kit according to claim 2, wherein the heater body has a body profile including a plurality of folded portions in a plane extending through at least some of the plurality of first sections and the plurality of second sections.

6. The chamber kit according to claim 1, wherein the one or more first sections include a first ring segment, and the one or more second sections include a second ring segment spaced radially apart from the first ring segment.

7. The chamber kit according to claim 6, wherein the heater body further comprises a third ring segment spaced apart from the second ring segment along the radial direction.

8. The one or more connector sections mentioned above A first connector section between the end of the first ring segment and the first end of the second ring segment, and The second connector section between the second end of the second ring segment and the end of the third ring segment The chamber kit according to claim 7, comprising:

9. The chamber kit according to claim 7, wherein the heater body has a body profile that includes a plurality of folded portions in a plane extending through the first ring segment, the second ring segment, and the third ring segment.

10. The chamber kit according to claim 1, wherein the heater body, the first electrode, and the second electrode are made of silicon carbide (SiC).

11. The chamber kit according to claim 1, wherein the heater body is made of opaque quartz, and the first electrode and the second electrode each comprise heating elements embedded within the opaque quartz.

12. A chamber kit applicable to semiconductor manufacturing, It is a heater, A heater body comprising a first ring segment, a second ring segment spaced apart from the first ring segment, and a connector section between the first ring segment and the second ring segment, A first electrode connected to the heater body, A second electrode connected to the heater body, A heater equipped with, A liner having a ledge sized and molded to support the heater body. A chamber kit equipped with these features.

13. The chamber kit according to claim 12, wherein the first ring segment and the second ring segment have an azimuthal angle between their two ends, and the azimuthal angle is less than 90 degrees.

14. The chamber kit according to claim 12, wherein the first ring segment and the second ring segment have an azimuthal angle between their two ends, and the azimuthal angle is in the range of 90 degrees to 180 degrees.

15. A second heater body comprising a third ring segment, a fourth ring segment spaced apart from the third ring segment, and a second connector section between the third ring segment and the fourth ring segment, A third electrode connected to the second heater body, The fourth electrode connected to the second heater body and The chamber kit according to claim 12, further comprising:

16. A processing chamber applicable to use in semiconductor manufacturing, A chamber body comprising an injection side and an exhaust side, A substrate support placed within the processing space, and A heater positioned adjacent to the injection side of the chamber body, An arched heater body comprising one or more first sections, one or more second sections, and one or more connector sections, A first electrode connected to the arch-shaped heater body and extending at least partially through the chamber body, A second electrode is connected to the arch-shaped heater body and extends through at least partially the chamber body. A heater equipped with A processing chamber, including a processing chamber.

17. The processing chamber according to claim 16, further comprising seals disposed around each of the first electrode and the second electrode.

18. The processing chamber according to claim 16, further comprising quartz sleeves disposed around each of the first electrode and the second electrode, respectively.

19. The processing chamber according to claim 16, wherein the first electrode and the second electrode are received in the respective electrical sockets of an airtight feedthrough assembly.

20. The chamber body further comprises a second heater positioned adjacent to the exhaust side, the second heater being A second arch-shaped heater body comprising one or more third sections, one or more fourth sections, and one or more second connector sections, A third electrode connected to the arch-shaped heater body, The fourth electrode connected to the arch-shaped heater body and The processing chamber according to claim 16, comprising:

Images