Hydroxyl combustion oxidation caused by plenum

Abstract

A method and processing chamber for hydroxyl combustion oxidation by plenum. A mixture is generated in the plenum. The mixture comprises a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected toward the substrate of the processing chamber at a jet gas velocity faster than the flame gas velocity. Radicals are generated in accordance with the first and second gases while the chamber is being heated.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure generally relate to processing chambers for processing substrates. [Background technology]

[0002]

[0002] In processing substrates such as semiconductor substrates, the substrate is placed on a support in a processing chamber, and appropriate processing conditions are maintained within the processing chamber. For example, to chemically process the substrate, the substrate can be oxidized in a controlled oxidation process. The substrate can be oxidized, for example, by an array of chemicals placed above and / or below the substrate in the chamber. The oxidation process can be used, for example, to oxidize silicon nitride to silicon oxide or silicon oxynitride.

[0003]

[0003] Variations in the oxidation process across the entire substrate have been observed to result in non-uniform treatment of the substrate. Currently, much of the non-uniform oxidation occurs in various substrate regions, for example, the proximal or distal portions of the memory holes. This is due to low-pressure radical oxidation requirements, e.g., less than 10 Torr. Unfortunately, high-pressure oxidation processes have been largely unsuccessful because the oxidation radicals are rapidly cooled or decayed. Radicals formed from the high-pressure oxidation process cannot penetrate sufficiently into the memory holes of the substrate, thus ensuring a uniform oxidation reaction. This is further complicated when using memory holes with a high aspect ratio, where the surface area continues to increase by 10-20% for each node of the memory hole.

[0004]

[0004] Therefore, improved methods and apparatus for the oxidation process are needed. [Overview of the Initiative]

[0005]

[0005] In one embodiment, the present disclosure provides a processing chamber. The processing chamber includes a substrate support. The processing chamber includes a controller. The controller is configured to receive a first reactive gas in a plenum through a first plurality of inlets, receive a second reactive gas in a plenum through a second plurality of inlets, generate a mixture of the first reactive gas and the second reactive gas, heat the processing chamber, and inject the mixture from the plenum to the substrate support at a jet gas velocity faster than the flame gas velocity, thereby generating radicals in accordance with the heat and the mixture.

[0006]

[0006] In another aspect, the present disclosure provides a method for hydroxyl combustion oxidation resulting from the mixing of plenum reactants. The method comprises generating a mixture in a plenum via a controller. The mixture comprises a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected via the controller toward a first position in the chamber at a jet gas velocity faster than the flame gas velocity. While the chamber is heating, radicals are generated depending on the first and second gases.

[0007]

[0007] In another aspect, the present disclosure provides a computer-readable medium. The computer-readable medium is configured to generate a mixture in a plenum via a controller, the mixture comprising a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected via the controller using a plurality of orifices positioned along a first side of the chamber toward a first position in the chamber, and the mixture is injected at a jet gas velocity faster than the flame gas velocity. Radicals are generated depending on the mixture while the chamber is being heated.

[0008]

[0008] To enable a more detailed understanding of the above-mentioned features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments and should therefore not be considered limiting in scope, as other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0009] [Figure 1] An exemplary rapid heat treatment chamber having a substrate support according to an embodiment of the present disclosure is schematically shown. [Figure 2] This is a schematic diagram of a cross-sectional view of a support ring according to an embodiment of the present disclosure. [Figure 3A-3B] Figure 3A shows a plenum having multiple orifices according to an embodiment of the present disclosure. Figure 3A shows a plenum configured to partially cover a processing chamber by injecting gas. Figure 3A shows a plenum configured to cover the substrate of a processing chamber by injecting gas. [Figure 4] The diagram shows a substrate chamber having multiple plenums configured to partially cover the processing chamber by injecting gas, according to an embodiment of the present invention. [Figure 5] The diagram shows a substrate chamber having multiple plenums configured to inject gas into the processing chamber, according to an embodiment of the present invention. [Figure 6] The diagram shows a substrate chamber having multiple plenums configured to cover the substrate in the processing chamber by injecting gas, according to an embodiment of the present invention. [Figure 7A-7C] Figure 7A shows a schematic diagram of a memory hole in a substrate according to an embodiment of the present disclosure. Figure 7A shows a memory hole before oxidation. Figure 7B shows a memory hole while hydroxyl radicals are flowing. Figure 7C shows a memory hole after hydroxyl radical combustion oxidation. [Figure 8] This is a schematic diagram of a method for generating radicals in a processing chamber according to an embodiment of the present disclosure. [Figure 9]A schematic diagram is shown illustrating the injection of various mixing ratios into a processing chamber according to an embodiment of this disclosure. [Modes for carrying out the invention]

[0010]

[0018] For ease of understanding, the same reference numerals were used to indicate identical elements common to multiple figures where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0011]

[0019] This disclosure provides a system for providing a high-pressure radical oxidation process while maintaining conformity, throughput, and oxide quality. In certain embodiments, the system may allow for the formation of an increase in oxygen radicals or hydroxide radicals for the oxidation process.

[0012]

[0020] In certain embodiments, the system can perform a high-pressure oxidation reaction for a plurality of orifices or nozzles that facilitate the fuel oxidation combustion reaction. The orifices or nozzles may release one or more reactive gases, such as hydrogen gas, oxygen gas, or an inert gas. The orifices or nozzles can provide better gas distribution on the wafer, enabling greater control over the shape and position of the oxidation process. The orifices may inject one or more reactive gases at a high pressure (e.g., 50–200 Torr) and a rate exceeding 3 m / s to prevent the flame from returning upstream. For example, the orifices may inject one or more reactive gases at a high pressure (e.g., 50–200 Torr) and a rate exceeding 10 m / s to prevent the flame from returning upstream. Rates of about 3 m / s to about 10 m / s are faster than the flame velocity and can maintain efficient and robust oxidation of the substrate while facilitating the oxidation reaction.

[0013]

[0021] Processing chamber

[0022] Figure 1 schematically shows a rapid heat treatment chamber 10. A substrate 12, such as a semiconductor substrate like a silicon substrate to be heat treated, enters the processing area 18 of the processing chamber 10 through a valve or access port 13. The substrate 12 is supported at its periphery by an annular support ring 14. An edge lip 15 extends inward from the annular support ring 14 and contacts the periphery of the substrate 12. The substrate can be oriented such that processed features 16 already formed on the front surface of the substrate 12 face upward toward the processing area 18 defined above by a transparent quartz window 20. That is, the front surface of the substrate 12 faces the array of lamps 26. The front surface of the substrate 12 with the processed features formed may face away from the array of lamps 26, i.e., toward the pyrometer 40. In contrast to the schematic diagram, most of the features 16 do not project a substantial distance beyond the front surface of the substrate 12, and the patterning is within and near the plane of the front surface.

[0014]

[0023] The substrate is passed between paddles or robot blades (not shown), and when the substrate is carried into the processing chamber and lifted onto the support ring 14, a plurality of lift pins 22, such as three lift pins, can be raised and lowered to support the back side of the substrate 12. The radiant heating device 24 is positioned above the window 20 and is configured to direct radiant energy through the window 20 towards the substrate 12. In the processing chamber 10, the radiant heating device may include a number of 409, an exemplary number, of high-intensity tungsten halogen lamps 26 positioned within respective reflective tubes 27 arranged in a hexagonal packed array above the window 20. The array of lamps 26 is sometimes referred to as a lamp head. However, other radiant heating devices are considered to be replaceable. Generally, this includes resistive heating for rapidly increasing the temperature of the radiation source. Examples of suitable lamps include mercury vapor lamps having a glass or silica envelope surrounding a filament, and flash lamps having a glass or silica envelope surrounding a gas, such as xenon, which provides a heat source when the gas is excited. As used herein, the term lamp is intended to cover lamps that include an envelope surrounding the heat source. The "heat source" of a lamp refers to a material or element that can raise the temperature of the substrate, such as a filament or gas that can provide energy, or a solid region of a material that injects radiation, such as an LED or a solid laser and a laser diode.

[0015]

[0024] As used herein, rapid heat treatment or RTP refers to an apparatus or process capable of uniformly heating a substrate at a rate of about 50°C / second or higher, e.g., about 100°C / second to 150°C / second and about 200°C / second to 400°C / second. The temperature can be uniformly heated in a temperature range of about 700°C to about 1,000°C, e.g., about 700°C, about 800°C, about 900°C, about 1,000°C, etc. The temperature can be uniformly heated down to about 800°C. Typical ramp-down (cooling) rates in an RTP chamber are in the range of about 80°C / second to 150°C / second. Some processes performed in an RTP chamber utilize temperature fluctuations across the substrate of less than a few degrees Celsius. An RTP chamber with such a heating control system can anneal a sample in less than 5 seconds, e.g., less than 1 second, and in some embodiments, in milliseconds.

[0016]

[0025] By controlling the temperature of the entire substrate 12 to a temperature precisely defined across the entire substrate 12, the uniformity of the process is improved. One passive means of improving uniformity may include a reflector 28 disposed below the substrate 12. The reflector 28 extends parallel to the substrate 12 and over an area wider than the substrate 12. The reflector 28 efficiently reflects the thermal radiation emitted from the substrate 12 back towards the substrate 12, increasing the apparent emissivity of the substrate 12. The spacing between the substrate 12 and the reflector 28 may be between about 3 mm and 9 mm, and the aspect ratio of the width to the cavity thickness is preferably greater than 20. The upper portion of the reflector 28, which may be made of aluminum and have a highly reflective surface coating or a multilayer dielectric interference mirror, and the back side of the substrate 12 form a reflective cavity for increasing the effective emissivity of the substrate, thereby improving the accuracy of temperature measurement. The reflector 28 may have a more irregular surface or a black or other colored surface to more closely resemble a blackbody wall. The reflector 28 may be deposited on a second wall 53. The second wall 53 is a water-cooled base 53 made of metal for heat-sinking excess radiation from the substrate, particularly during cooling. Thus, the processing area of the processing chamber 10 has at least two substantially parallel walls, where the first wall is a window 20 made of a material transparent to radiation, such as quartz, and the second wall 53, which is substantially parallel to the first wall and made of a metal that is not significantly transparent.

[0017]

[0026] One way to improve uniformity involves supporting the support ring 14 on a rotatable cylinder 30 that is magnetically coupled to a rotatable flange 32 positioned outside the processing chamber 10. A motor (not shown) rotates the flange 32 and thus rotates the substrate about its center 34. The center 34 of the substrate is generally also the centerline of the symmetric chamber. Alternatively, the bottom of the rotatable cylinder 30 may be held in place by a magnet disposed within the rotatable flange 32 and may be a magnetic levitation cylinder that rotates by rotating the magnetic field within the rotatable flange 32 from a coil within the rotatable flange 32.

[0018]

[0027] Another method to improve uniformity is to divide the lamps 26 into zones arranged in a generally ring-like pattern around a central axis 34. A control circuit changes the voltage supplied to the lamps 26 in different zones, thereby adjusting the radial distribution of radiant energy. Dynamic control of zoned heating is influenced by one or more pyrometers 40 connected through one or more optical pipes 42 positioned to face the back side of the substrate 12 through openings in a reflector 28 to measure the temperature over the entire radius of the rotating substrate 12. The optical pipes 42 can be formed from various structures, including sapphire, metal, and silica fibers. A computerized controller 44 receives the output of the pyrometers 40 and, accordingly, controls the voltage supplied to the various rings of the lamps 26, thereby dynamically controlling the radiant heating intensity and pattern during processing. The pyrometers generally measure the intensity of light in a narrow wavelength bandwidth, for example, 40 nm, within the range of about 700 nm to about 1000 nm. The controller 44 or other instrumentation converts light intensity to temperature through the well-known Planck distribution of the spectral distribution of light intensity emitted from a blackbody held at that temperature. However, high-temperature measurements are affected by the emissivity of a portion of the scanned substrate 12. The emissivity ε can vary from 1 for a blackbody to 0 for a perfect reflector, and is therefore an inverse measurement of the reflectivity R=1-ε on the back side of the substrate. The back side of the substrate is typically uniform so that uniform emissivity is expected, but the composition of the back side may vary depending on previous treatment. High-temperature measurements can be further improved by including an emissometer that optically probes the substrate to measure the emissivity or reflectivity of the portion of the substrate facing the other within the relevant wavelength range, and a control algorithm in the controller 44 that includes the measured emissivity.

[0019]

[0028] substrate support

[0029] Figure 2 is a schematic cross-sectional side view of a support ring 200 that may be used in place of the support ring 14 in Figure 1 according to one embodiment. The support ring 200 shown in Figure 2 may be placed in a processing chamber, for example, the rapid heat treatment chamber 10 shown in Figure 1, and may extend radially inward along the inner circumferential surface 60 of the processing chamber 10. The support ring may be a continuous ring body (or, in some embodiments, a separate ring-shaped body) that substantially surrounds the outer circumference of the substrate.

[0020]

[0030] The support ring 200 includes an annular body having a central opening, as shown in Figure 2. The support ring 200 has an outer ring 202 and an inner ring 204. The outer ring 202 connects to the inner ring 204 through a flat portion 206 that extends radially inward from the inner circumference 203 of the outer ring 202 to the outer circumference 205 of the inner ring 204. The outer ring 202 may be supported by a cylinder 230, such as the rotatable cylinder 30 shown in Figure 1. In a top-heated configuration, the rotatable cylinder 230 may contact the support ring 200 just inside the outer ring 202. That is, the bottom surface of the outer ring 202 is on the opposite side from the top surface 206a of the flat portion 206, preventing light leakage and providing mechanical stability. The support ring 200 further includes an edge lip 208 that extends radially inward from the inner circumference 207 of the inner ring 204 and forms a support ledge that supports the back surface 212b of the substrate 212 near the outer edge of the substrate 212.

[0021]

[0031] The substrate support 210 may be a continuous ring body positioned around the outer circumference of the edge lip 208. A substrate support 210 having a continuous ring body may be advantageous regardless of the heating lamp configuration, because the continuous ring body prevents potential light leakage problems by preventing the light from the source radiation in the processing chamber from reaching the pyrometer positioned opposite the source radiation. In addition, the continuous ring body is considered to provide better and more stable support to the substrate 212 because the substrate 212 is rotatably supported by the substrate support 210 during the heating process.

[0022]

[0032] The substrate support 210 may be formed on the upper surface 208a of the edge lip 208 using a laser processing technique or any suitable technique. The substrate support 210 may be any suitable shape, such as a rectangular, rhombus, square, hemisphere, hexagon, triangular projection, or a mixture of projections of different shapes. The substrate support 210 may be any shape that reduces the contact surface with the substrate. For example, the substrate support 210 may have a hemispherical upper surface. A hemispherical upper surface may be advantageous in terms of effective thermal mass reduction because it can further reduce the surface contact area between the edge lip and the substrate by changing the surface contact to continuous line contact or discontinuous line contact.

[0023]

[0033] In this disclosure, “line contact” may refer to a line less than approximately 500 μm, for example, between approximately 5 μm and approximately 200 μm, for example, a line having a radial width of 50 μm. The substrate support 210 supports the substrate with minimal contact area and minimal heat transfer between the edge lip 208 and the substrate 212. For a nominal 12-inch (300 mm) substrate, the contact area between the edge lip 208 and the substrate is approximately 15 cm². 2 For example, about 5cm 2 For example, about 1 cm 2 From approximately 3cm 2 It may be up to this point. The width of the lines that physically contact the back surface of the substrate is expected to vary depending on the shape of the substrate support 210. The shape and / or dimensions of the substrate support 210 are also expected to vary as long as the contact area between the substrate support 210 and the back surface 212b of the substrate 212 is minimized and the substrate 212 is securely supported. In one embodiment, the dimensions of the substrate support 210 may vary over a wide range, for example, between about 0.1 mm and about 10 mm, for example, between about 0.2 mm and about 2 mm, for example, with a width of about 1 mm.

[0024]

[0034] By converting surface contact to continuous line contact, the contact area available for conductive heat transfer between the edge lip 208 of the support ring 200 and the substrate 212 is substantially reduced, thereby eliminating or minimizing excessive temperature gradients within the substrate during heat treatment, even at reduced pressures of approximately 50 Torr to 200 Torr, such as approximately 50 Torr, 60 Torr, 70 Torr, 80 Torr, 90 Torr, 100 Torr, 1110 Torr, 120 Torr, 130 Torr, 140 Torr, 150 Torr, 160 Torr, 170 Torr, 180 Torr, 190 Torr, and 200 Torr. Reducing the surface contact area between the substrate 212 and the support ring 200 also allows for better control of thermal mass discontinuities caused by the overlap between the substrate 212 and the edge lip 208. Therefore, the distortion of the thermal gradient generated by heat loss around the edges of the substrate is reduced, resulting in an improved overall substrate temperature profile with minimal edge temperature gradient. Reducing the contact area between the edge lip 208 and the substrate 212 further reduces the possibility of particle contamination in the processing chamber. With respect to the upper radiant heating configuration shown in Figure 1, since the substrate is thermally separated from the edge lip 208 through the substrate support 210, the radiation from the radiant heat source can be directed solely to heat the substrate without excessive concern about discontinuities in thermal mass in overlapping regions. Thus, the substrate support of the present invention can be translated into a faster achievable heating gradient or a reduction in spike power conditions.

[0025]

[0035] The substrate support 210 may be made of a material transparent to radiation in the frequency range used for measuring the temperature of the substrate. In one embodiment, the substrate support 210 is made of silicon carbide. Other materials such as silicon carbide alloys, ceramics, or high-temperature materials such as amorphous silica, Al2O2, ZrO2, Si3N4, or similar materials are also conceivable. The substrate support 210 may optionally be coated with silicon dioxide (SiO2) or any other suitable material to prevent Si-Si bonding with the back surface 212b of the substrate 212 at high temperatures, thereby potentially allowing the substrate to adhere to the substrate support. The support ring 200 may be made of a material similar to the substrate to minimize the mismatch in absorptive / reflectance between the substrate and the support ring. In one embodiment, the support ring 200 is made of silicon carbide. The support ring 200 may optionally be coated with a layer of polycrystalline silicon (polysilicon) to make it opaque to radiation in the frequency range used for measuring the temperature of the substrate in the heat treatment chamber. In such cases, the thickness of the polysilicon layer may vary in the range between approximately 20 μm and approximately 50 μm, depending on the thickness of the support ring 200, or, for example, the opacity of the SiC used within the support ring 200.

[0026]

[0036] The processing chamber 10 operates at a pressure of approximately 50 Torr to approximately 250 Torr. The processing chamber 10 includes lamp heating, pyrometer temperature control, or other substrate heating techniques for heating the substrate inside the chamber, for example, a resistance heater or induction heater that rotates around the substrate to provide uniform heating.

[0027]

[0037] Plenum

[0038] The processing chamber includes a plenum 301. The plenum 301 may include a reservoir. The reservoir is approximately 5 cm 3 From approximately 100cm 3 It may have a volume of [a certain volume]. The plenum may have a mixing device. The mixing device may include one or more devices such as a blocker plate.

[0028]

[0039] As shown in FIGS. 3A and 3B, the plenum 301 may have a first inlet 302. The first inlet 302 can supply one or more reactive gases, such as H2 or O2, to the plenum 301. For example, without limitation, the first inlet 302 can supply a reactive gas of H2 to the plenum 301. As shown in FIGS. 3A and 3B, the plenum 301 may have a second inlet 303. The second inlet 303 can supply one or more reactive gases, such as H2 or O2, to the plenum 301. The plenum 301 may have a third inlet 304, and the third inlet 304 can provide one or more inert gases (such as Ar, He, N2, etc.) to the plenum 301. For example, without limitation, the third inlet 304 can provide N2 to the plenum 301.

[0029]

[0040] The plenum 301 is configured to produce a mixture. The mixture includes a mixture of two or more reactive gases, such as H2 and O2, and an inert gas, such as He, N2, or Ar. 。 For example, the mixture is such that the hydrogen gas exceeds 50% of the H2:O2 mixture. As a further non-limiting example, the plenum 301 produces a mixture in which H2 occupies between about 50% and about 90% of the mixture of H2 and O2, such as about 50%, about 60%, about 70%, or about 80%. 。 The plenum 301 mixes a reactive gas (such as H2 or O2) with an inert gas (such as He, N2, or Ar), and the reactive gas exceeds 50% of the mixture. As a non-limiting example, the plenum mixes O2, H2, and N2. 。

[0030]

[0041] The plenum 301 is configured to produce a mixture using gases from a first inlet 302 and a second inlet 303. The plenum 301 produces a mixture using a reactive gas such as H2 and a reactive gas such as O2. The plenum 301 is configured to produce a mixture using gases from a first inlet 302 and a third inlet 304. For example, the plenum 301 may produce a mixture using a reactive gas such as H2 and an inert gas such as N2. The plenum 301 is configured to produce a mixture using gases from a second inlet 303 and a third inlet 304. For example, the plenum 301 may produce a mixture using a reactive gas such as O2 and an inert gas such as N2.

[0031]

[0042] The plenum 301 includes a plurality of orifices 305 for injecting the mixed gas into the processing chamber 10. The orifices 305 have diameters ranging from about 30 mil to about 100 mil, for example, about 30 mil, about 40 mil, about 50 mil, about 60 mil, about 70 mil, about 80 mil, about 90 mil, about 100 mil, etc. The plurality of orifices 305 may range from about 1 to about 15 orifices, for example, about 3 to about 8 orifices, for example, about 1 orifice, about 2 orifices, about 3 orifices, about 4 orifices, about 5 orifices, about 6 orifices, about 7 orifices, about 8 orifices, about 9 orifices, about 10 orifices, about 11 orifices, about 12 orifices, about 13 orifices, about 14 orifices, about 15 orifices, etc.

[0032]

[0043] The plenum facilitates improved mixing of the processing gases on the substrate 212 and improves coverage on the substrate when injecting the gas mixture. The improved gas introduction in this disclosure results in improved radical generation and sustainability, and therefore improves substrate processing. In particular, oxidation of the memory hole sidewalls is improved through improved fit / uniformity.

[0033]

[0044] The plenum 301 may include a plurality of orifices 35 for injecting gas that partially covers the substrate 212 of the processing chamber 10 when injected, or for injecting gas that covers the substrate 212 of the processing chamber 10 when injected. For example, the plenum may include about 1 to about 5 orifices (e.g., about 1 orifice, about 2 orifices, about 3 orifices, about 4 orifices, or about 5 orifices) for injecting gas that partially covers the substrate 212 of the processing chamber, as shown in Figure 3A. As a further non-limiting example, the plenum may contain approximately 6 to 15 orifices, for example, approximately 6, 7, 8, 9, 10, 11, 12, 13, 14, or 15 orifices, for injecting the gas covering the substrate 212 in the processing chamber, as shown in Figure 3B. Improved coverage and reaction efficiency between hydrogen and oxygen molecular gases result from the number of pre-mixed hydrogen and oxygen gases within the plenum. This improved reaction efficiency leads to more uniform oxidation of the substrate memory holes, as described later.

[0034]

[0045] Orifice 301 is configured to inject a gas mixture toward a first position in the chamber. The first plenum 401 may be positioned along a first side 402 of the processing chamber 10 such that a plurality of orifices 305 are oriented toward the first position in the chamber. The first position includes the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The plurality of orifices 305 may be positioned to inject the gas mixture substantially perpendicularly from the first side 402 of the processing chamber 10. The second plenum 403 may be positioned along a second side 404 of the processing chamber 10 such that a plurality of orifices 305 are oriented toward a second position in the chamber. The plurality of orifices 305 may be positioned to inject the gas mixture substantially perpendicularly from the second side 404 of the processing chamber 10. The second position includes the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. For example, but not limited to, as shown in Figure 4, the first plenum 401 and the second plenum 403 may include multiple orifices for injecting gas that partially covers the substrate 212 of the processing chamber 10 during injection. As a further non-limiting example, as shown in Figure 5, the first plenum 401 and the second plenum 403 may include multiple orifices for injecting gas that covers the substrate 212 of the processing chamber 10 during injection.

[0035]

[0046] The third plenum 405 may be positioned along the third side 406 of the processing chamber 10 such that a plurality of orifices 305 are oriented toward the third position. The plurality of orifices 305 may be positioned to inject a mixture of gas substantially perpendicularly from the third side 406 of the processing chamber 10, as shown in Figure 6. The third position includes the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. As a non-limiting example, as shown in Figure 6, the first plenum 401, the second plenum 403, and the third plenum 405 may include a plurality of orifices for injecting gas that covers the substrate 212 of the processing chamber 10 during injection.

[0036]

[0047] circuit board memory holes

[0048] The substrate 212 may include memory holes 703. As used herein, “memory hole” refers to a vertical channel extending into two or more physical levels of the substrate 212. The substrate 212 may include a plurality of memory holes. A memory hole may include a vertical trench formed to divide one or more memory hole structures into two or more vertical “NOT AND” (NAND) strings. A memory hole may include a vertical channel extending into layers 32, 48, 64, 96, 112, or more of the substrate 212.

[0037]

[0049] Multiple memory holes have substantially vertical and uniform vertical trenches. Multiple memory holes have one or more vertical features (e.g., necking, clogging, curvature, striations, tapered profiles, sub-recesses, strain, inclination, twist, etc.). Multiple memory holes have a first vertical trench containing a tapered profile extending to 16 layers, and as shown in Figure 7B, a second vertical trench containing a tapered profile extends beyond the first vertical trench, forming a shelf.

[0038]

[0050] Multiple memory holes contain an outer layer 701 within a vertical trench. The outer layer 701 may include one or more silica substrates, such as layers of silicon nitride or silicon dioxide. The outer layer 701 may be a silicon nitride layer. The outer layer 701 is oxidized by hydroxyl radicals 702 to form a silicon dioxide layer, as described below.

[0039]

[0051] controller

[0052] The processing chamber 10 includes a controller 405. Each controller may be a local controller associated with a corresponding single plenum or group of corresponding plenums and programmed to control the group of plenums. For example, but not limited to, each local controller 405 can control a single plenum. In a further non-limiting example, the controller 405 may be configured to control multiple plenums. In one embodiment, the controller 405 includes an application-specific integrated circuit (ASIC). Each controller 405 may be integrated within the processing chamber 10. Each controller 405 may be connected to a PCB separate from the processing chamber 10. The controller 405 includes an electromagnetic shield. To suppress corrosion, it is assumed that the surface of the controller 405 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-tack coatings applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), silicon dioxide (SiO2O3). x (etc.), titanium dioxide (TiO2, etc.) are included. 。

[0040]

[0053] Controller 405 receives commands from the master controller via the PCB, or is the master controller itself. Commands may be in the form of signals addressed to correspond to a specific device or plenum, such as a particular plenum of a processing chamber. Each controller 405 is programmed to recognize command signals addressed to correspond to a device under its authority and to control the plenum according to the received command. Each controller 405 is programmed to ignore command signals that are not addressed to correspond to any of the orifices within the controller 405's range.

[0041]

[0054] Each plenum can be individually addressed via its corresponding controller 405, thereby allowing control of the operation of each plenum without altering the operating state of other plenums in the processing chamber 10. Each plenum is assigned to one or more groups of plenums, and each group of plenums can be individually addressed via one or more corresponding controllers 405. The operation of each plenum within a defined group can be controlled without altering the operating state of other plenums not within the defined group.

[0042]

[0055] Oxidation process

[0056] Referring here to Figure 8, the method of hydroxyl combustion oxidation produced by a plenum involves generating a mixture in the plenum having a first gas and a second gas via a controller command. The processing chamber may have a substrate placed inside. The mixture includes a first reactive gas (e.g., H2, O2), a second reactive gas (e.g., H2, O2), and an inert gas (e.g., N2, Ar, He). For example, but not limited to, the mixture may include a first gas of H2, a second gas of O2, and a third gas of N2.

[0043]

[0057] Plenum 301 can produce a mixture having two or more reactive gases, for example, H2 and O2, in which case H2 accounts for more than 50% of the H2:O2 mixture. For example, Plenum 301 can produce a mixture such that H2 accounts for between about 50% and about 90% of the mixture, for example, about 50%, about 60%, about 70%, about 80%, or about 90%. Plenum 301 can produce a mixture having two or more reactive gases (e.g., H2 and O2) and one or more inert gases (e.g., N2, He, or Ar), in which case H2 accounts for more than 50% of the mixture. Plenum 301 can produce a mixture having two or more reactive gases (e.g., H2 and O2) and one or more inert gases (e.g., N2, He, or Ar), in which the inert gases account for more than 50% of the mixture. For example, Plenum 301 can produce a mixture in which the inert gas accounts for between about 50% and about 90% of the mixture, for example, about 50%, about 60%, about 70%, about 80%, or about 90%.

[0044]

[0058] Method 800 includes injecting mixture 212 via a controller. The mixture can be injected from plenum 301 toward a first position in the chamber. Plenum 301 is approximately 1 slm to approximately 40 slm, for example, approximately 1 slm, approximately 2 slm, approximately 3 slm, approximately 4 slm, approximately 5 slm, approximately 6 slm, approximately 7 slm, approximately 8 slm, approximately 9 slm, approximately 10 slm, approximately 11 slm, approximately 12 slm, approximately 13 slm, approximately 14 slm, approximately 15 slm, approximately 16 slm, approximately 17 slm, approximately 18 slm, approximately 19 slm, approximately 20 slm, approximately 21 slm, The mixture can be injected toward the first position in the chamber at volumetric flow rates such as approximately 22 slm, 23 slm, 24 slm, 25 slm, 26 slm, 27 slm, 28 slm, 29 slm, 30 slm, 31 slm, 32 slm, 33 slm, 34 slm, 35 slm, 36 slm, 37 slm, 38 slm, 39 slm, and 40 slm. The plenum 301 can be injected with approximately 1 to approximately 15 slm, for example, approximately 9.4 slm of reactive O2 gas, approximately 1 to approximately 30 slm, for example, approximately 22 slm of reactive H2 gas, and approximately 1 to approximately 40 slm, for example, approximately 40 slm of inert N2 gas.

[0045]

[0059] The mixture is injected from the plenum 301 toward the first position in the chamber at gas rates ranging from approximately 1 m / s to approximately 20 m / s, for example, approximately 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, 10 m / s, 11 m / s, 12 m / s, 13 m / s, 14 m / s, 15 m / s, 16 m / s, 17 m / s, 18 m / s, 19 m / s, and 20 m / s. The mixture is injected from the plenum 301 toward the first position in the chamber at a gas rate sufficient to spread the gas over the substrate, thereby improving reaction efficiency and promoting uniform oxidation of the outer layer of the memory holes in the substrate. Plenum 301 injects a first gas toward a first position in the chamber so that the jet gas velocity exceeds a flame velocity of approximately 10 m / s from about 2 m / s.

[0046]

[0060] Plenum 301 has a conductance ratio to multiple orifices. The conductance ratio of plenum 301 to multiple orifices 305 ranges from approximately 10:1 to approximately 40:1, for example, approximately 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, etc. Plenum 301 may have a conductance ratio of approximately 10:1 to multiple orifices 305. The plenum may have a conductance ratio of approximately 30:1 to multiple orifices 305. The conductance ratio allows for variability in the reaction between O2 and H2, resulting in the control and denaturation of hydroxyl radicals.

[0047]

[0061] As shown in Figure 9, the plenum 301 can inject the mixture to a first position in the chamber according to a gradient. As used herein, “gradient” refers to the change in the jet gas velocity of the mixture over time. The gradient may represent a first jet gas velocity injected by the plenum 301. The first jet gas velocity may include an inert gas velocity between about 60% and about 100%, and a reactive gas mixture velocity between about 0% and about 40%, as shown in Figure 9. The gradient may progress to a second jet gas velocity over a period of time, for example, several seconds, several minutes, several hours, several days, etc. The second jet gas velocity may include an inert gas velocity between about 40% and about 60%, and a reactive gas mixture velocity between about 40% and about 60%, as shown in Figure 9. The gradient may progress to a third jet gas velocity over a period of time, for example, several seconds, several minutes, several hours, several days, etc. The third jet gas velocity may include an inert gas velocity between approximately 0% and approximately 40% of the mixture, as shown in Figure 9, and the reactive gas mixture is between approximately 100% and approximately 40% of the mixture. The third jet gas velocity may be maintained for a certain period of time (e.g., a few seconds, a few minutes, a few hours, a few days, etc.) to ensure proper oxidation of the substrate 212, as shown in Figure 9.

[0048]

[0062] Method 700 includes injecting the mixture while rotating the substrate 212 on the rotatable cylinder 30 described above. Method 700 includes injecting the mixture while the pressure in the processing chamber is between approximately 50 Torr and approximately 200 Torr. For example, the injection of the mixture may occur during a reduction in pressure in the processing chamber from approximately 50 Torr to approximately 200 Torr, such as approximately 50 Torr, approximately 60 Torr, approximately 70 Torr, approximately 80 Torr, approximately 90 Torr, approximately 100 Torr, approximately 110 Torr, approximately 120 Torr, approximately 130 Torr, approximately 140 Torr, approximately 150 Torr, approximately 160 Torr, approximately 170 Torr, approximately 180 Torr, approximately 190 Torr, approximately 200 Torr, etc.

[0049]

[0063] The hydroxyl combustion oxidation method 800 includes generating radicals depending on the mixture. Generating radicals includes generating hydroxyl radicals depending on the reaction of the gas mixture injected from the plenum 301 toward the substrate 212. For example, hydroxyl radicals may be formed depending on the reaction of oxygen and hydrogen in the mixture. The reaction of oxygen and hydrogen in the mixture may result in hydroxyl radicals being formed in amounts ranging from about 5% to about 20%, for example, about 5%, about 6%, about 7%, about 8%, about 9%, about 10%, about 11%, about 12%, about 13%, about 14%, about 15%, about 16%, about 17%, about 18%, about 19%, and about 20% of the product. If hydrogen gas is present in the H2:O2 mixture at a concentration of more than 50%, the reaction of the mixture may generate hydroxide radicals in the processing chamber 10. For example, if the hydrogen gas in the H2:O2 mixture is between 50% and 90%, hydroxide radicals may be formed.

[0050]

[0064] Generating radicals may involve oxidizing the outer layer 701 from a silicon nitride layer to a silicon dioxide layer, as shown in Figures 7A-7C. Hydroxyl radicals 702 are generated via the reaction of a mixture flowing into memory holes 703 of the substrate 212, as shown in Figure 7A. The hydroxyl radicals 702 flow into memory holes 703 to provide good conformation, as shown in Figure 7B. For example, hydroxyl radicals flow into memory holes and provide 99% conformation at 200:1AR in a high partial pressure oxidizer 100 Torr treatment chamber. The hydroxyl radicals 702 react with the silicon nitride outer layer 701, as shown in Figure 7C, oxidizing the outer layer 701 to silicon dioxide.

[0051]

[0065] The oxidation of the outer layer 701 may have a certain thickness. The thickness of the oxidation of the outer layer 701 may be proportional to the amount of hydroxyl radicals produced by the reaction between the first gas and the second gas. The thickness of the oxidation of the outer layer 701 may also be equal to the amount of hydroxyl radicals produced by the reaction between the first gas and the second gas.

[0052]

[0066] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. A processing chamber, Substrate support and It is a controller, Receiving a first reactive gas in the plenum through a first set of inlets, Receiving a second reactive gas in the plenum through a second set of inlets, To produce a mixture of the first reactive gas and the second reactive gas, Heating the processing chamber, The mixture is injected from the plenum into the substrate support at a jet gas velocity faster than the flame gas velocity. The generation of radicals in response to heat and the aforementioned mixture, A controller configured to perform the following actions: A processing chamber, including a processing chamber.

2. The first gas is H ２ or O ２ The chamber according to claim 1, wherein the reactive gas contains a reactive gas.

3. The second gas is H ２ or O ２ The chamber according to claim 2, wherein the second gas is a reactive gas containing the first gas.

4. The chamber according to claim 1, wherein the plurality of inlets includes at least three inlets, and the plurality of outlets includes about three to about twenty orifices.

5. The chamber according to claim 1, wherein the plenum is located on the first side of the processing chamber.

6. The chamber according to claim 5, further comprising a second plenum located on the second side of the processing chamber.

7. The chamber according to claim 6, further comprising a third plenum located on the third side of the processing chamber.

8. A method of hydroxyl combustion oxidation produced by plenum, The method involves generating a mixture in the plenum via a controller, wherein the mixture comprises a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. Injecting the mixture via the controller using a plurality of orifices positioned along the first side of the chamber toward a first position of the chamber, wherein the injection of the mixture includes a jet gas velocity faster than the flame gas velocity. While the chamber is being heated, radicals are generated according to the mixture, Methods that further include this.

9. The method according to claim 8, wherein the mixture includes an inert gas injected from a third inlet.

10. The inert gas is Ar, N ２ The method according to claim 9, selected from , and He.

11. The method according to claim 9, wherein the injection of the mixture includes injecting the mixture according to a gradient.

12. The method according to claim 11, wherein the gradient includes the velocity of a first jet gas injected by the plenum.

13. The method according to claim 12, wherein the gradient includes the velocity of a second jet gas injected by the plenum.

14. The method according to claim 13, wherein the gradient includes the velocity of a third jet gas injected by the plenum.

15. The first reactive gas is H ２ or O ２ The method according to claim 8, wherein the reactive gas contains the active gas.

16. where the second reactive gas is H ２ or O ２ and is a reactive gas different from the first reactive gas, the method according to claim 15.

17. The method according to claim 8, wherein the plurality of orifices include about 3 to about 20 orifices.

18. The mixture is generated in the second plenum via the controller, Injecting the mixture via the controller using a plurality of orifices positioned along the second side of the chamber, wherein the injection of the mixture includes a jet gas velocity faster than the flame gas velocity. The method according to claim 8, further comprising:

19. The mixture is generated in the third plenum via the controller, Injecting the mixture via the controller using a plurality of orifices positioned along the third side of the chamber, wherein the injection of the mixture includes a jet gas velocity faster than the flame gas velocity. The method according to claim 18, further comprising:

20. Computer-readable medium, The method involves generating a mixture in the plenum via a controller, wherein the mixture comprises a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. Injecting the mixture via the controller using a plurality of orifices positioned along the first side of the chamber toward a first position in the chamber, wherein the injection of the mixture includes a jet gas velocity faster than the flame gas velocity. While the chamber is being heated, radicals are generated according to the mixture, A computer-readable medium configured to perform the following actions.

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