Methods and apparatus for flow distribution
The flow distribution ring and upper ring system in semiconductor reactors address chemical deposition issues by evenly distributing inert gas, maintaining chamber cleanliness and reducing precursor waste.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ASM IP HLDG BV
- Filing Date
- 2025-10-30
- Publication Date
- 2026-05-19
AI Technical Summary
Chemical deposition in reaction spaces of semiconductor manufacturing chambers leads to contamination and impaired component function, necessitating effective gas distribution to prevent such accumulation.
A flow distribution ring with grooves and openings, combined with an upper ring and spacer plate, evenly distributes inert gas around the susceptor to create a gas curtain, preventing chemical accumulation and ensuring uniform gas flow.
The gas distribution system effectively prevents chemical deposition, maintaining chamber cleanliness and functionality by creating a continuous gas curtain, enhancing precursor utilization and reducing waste.
Smart Images
Figure 2026082740000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to methods and apparatuses for flow distribution. More specifically, the present disclosure relates to a flow distribution ring disposed within a spacer plate to provide a gas curtain around a susceptor.
Background Art
[0002] Reaction chambers used in semiconductor manufacturing may be configured to include spaces or volumes that need to be purged with an inert gas to prevent chemicals from depositing in those areas. Deposition of chemicals in these spaces can result in contamination of the reaction space and / or impair the function of components within the reaction chamber.
Summary of the Invention
[0003] Various embodiments of the present technology may provide a spacer plate having grooves and an inlet opening in fluid communication with the grooves, a flow distribution ring disposed within the grooves, the flow distribution ring having a plurality of openings, and an upper ring disposed above the spacer plate and the flow distribution ring.
[0004]
[0005]
[0006]
[0007]
[0008] In one embodiment, the inlet opening is positioned horizontally and connected to a gas line.
[0009] In one embodiment, the upper ring includes a lip that extends radially inward.
[0010] In one embodiment, the lip is separated from the spacer plate by a gap.
[0011] In one embodiment, the spacer plate includes a lip that extends radially inward and overlaps with the outer edge of the support assembly.
[0012] In one embodiment, the spacer plate is formed from at least one of aluminum, nickel, stainless steel, and titanium, and the flow distribution ring is formed from at least one of aluminum, nickel, stainless steel, and titanium.
[0013] In one embodiment, the upper ring is formed from at least one of ceramic and quartz.
[0014] In another embodiment, the reactor comprises a lower chamber, a shower head positioned above the lower chamber, a spacer plate positioned between the lower chamber and the shower head, the spacer plate having an annular groove, an inlet opening, and a first lip extending radially inward within the upper surface of the spacer plate, a flow distribution ring positioned within the annular groove and having a plurality of openings that are in fluid communication with the inlet opening, a support assembly positioned within the reaction chamber, the support assembly having the first lip of the spacer plate overlapping the outer edge of the susceptor support assembly, and an upper ring connected to the upper surface of the spacer plate.
[0015] In one embodiment, the inlet opening is positioned horizontally and connected to an inlet port located on the outer surface of the reaction chamber.
[0016] In one embodiment, the upper ring includes a second lip extending radially inward.
[0017] In one embodiment, the second lip of the upper ring is separated from the spacer plate by a first gap.
[0018] In one embodiment, the device further comprises a seal positioned between the first lip of the spacer plate and the outer edge of the susceptor support assembly.
[0019] In one embodiment, the second lip of the upper ring is separated from the susceptor support assembly by a second gap, the second gap is arranged as an annular ring.
[0020] In yet another embodiment, a system comprises a reactor comprising a lower chamber, a shower head positioned above the lower chamber, a spacer plate positioned between the lower chamber and the shower head, the spacer plate having an annular groove, an inlet opening, and a first lip extending radially inward within the upper surface of the spacer plate, a flow distribution ring positioned within the annular groove and having a plurality of openings that fluidly communicate with the inlet opening, a susceptor support assembly positioned within the reaction chamber, the susceptor support assembly having the first lip of the spacer plate overlapping the outer edge of the susceptor support assembly, and an upper ring connected to the upper surface of the spacer plate, a gas line connected to the inlet opening, comprising a first pipe section and a second pipe section, the first and second pipe sections being parallel to each other, and a pressure control device located upstream of the first and second pipe sections.
[0021] In one embodiment, the system further comprises a first valve located along a first pipe section and a second valve located within a second pipe section.
[0022] In one embodiment, the gas line is further connected to an inert gas source.
[0023] In one embodiment, the system further comprises a controller configured to communicate with the first and second valves and operate the first and second valves.
Brief Description of the Drawings
[0024] The present technology may be more fully understood by referring to the detailed description in view of the following exemplary drawings. In the following figures, like reference numerals are assigned to like elements and steps throughout the figures.
[0025] [Figure 1] FIG. 1 is a diagram illustrating an example of a system according to some embodiments of the present technology. [Figure 2] FIG. 2 is a cross-sectional view of a reactor according to some embodiments of the present technology. [Figure 3A] FIG. 3A is a cross-sectional view of a reactor according to some embodiments of the present technology. [Figure 3B] FIG. 3B is a cross-sectional view of a reactor according to some embodiments of the present technology. [Figure 3C] FIG. 3C is a cross-sectional view of a reactor according to some embodiments of the present technology. [Figure 4] FIG. 4 is a top view of a part of a reactor according to some embodiments of the present technology. [Figure 5] FIG. 5 is a top view of a spacer plate according to some embodiments of the present technology. [Figure 6] FIG. 6 is a top view of a flow distribution ring according to some embodiments of the present technology.
Modes for Carrying Out the Invention
[0026] This technology can be described based on the components of a functional block and various processing steps. Such a functional block may be realized by any number of components configured to perform a specified function and achieve various results. For example, this technology may use various gas lines, valves, controllers, reaction chambers, vessels, and susceptors.
[0027] Referring to Figure 1, the exemplary system 100 may include a reactor 105 configured to perform processing on a substrate 225, for example, an object to be processed, such as a wafer (Figure 2). For example, the reactor 105 may be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processing on the object to be processed. In some embodiments, the reactor 105 may be configured to perform a transfer function, a vacuum sealing function, and an evacuation function. In some embodiments, the reactor 105 can perform an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.
[0028] In various embodiments, the system 100 may further include a container 145 configured to contain a chemical substance (i.e., a precursor). The container 145 may be configured to hold a solid or liquid chemical substance and may further be configured to convert the solid or liquid into vapor. The container 145 may be connected to a reactor 105. For example, the system 100 may further include various gas conduits and / or valves (not shown) for flowing vapor from the container 145 into the reactor 105.
[0029] In various embodiments, the system 100 may further comprise an inert gas source 115 configured to contain an inert gas such as argon. The inert gas source 115 may be fluidly connected to the reactor 105 via any number of gas lines / conduits and / or valves. In an exemplary embodiment, the inert gas source 115 may be connected to the reactor 105 via a gas line 120. The gas line 120 may comprise a first pipe section 125 and a second pipe section 130. The first pipe section 125 may be connected in parallel with the second pipe section 130. The first pipe section 125 may comprise a first valve 135 in line with the first pipe section 125. The first pipe section 125 may further comprise a limiter 160 located upstream of the first valve 135 and configured to restrict the flow through the first pipe section 125, the first valve 135, and the main gas line 120 downstream of the first pipe section 125. The first pipe section 125 may have a lower flow rate parameter than the second pipe section 130 due to the limiter 160.
[0030] Similarly, the second pipe section 130 may include a second valve 140 along the second pipe section 130. Each of the first valve 135 and the second valve 140 may include an air valve, a mechanical valve, a piezoelectric valve, or the like. In various embodiments, the first valve 135 and the second valve 140 may be operated according to control signals transmitted from the controller 110. For example, the controller 110 may open and close each of the first valve 135 and the second valve 140 independently of each other.
[0031] In various embodiments, the system 100 may further include a pressure controller 150 configured to monitor / sens the pressure in the main gas line 120 and / or control the pressure in the main gas line 120. The pressure controller 150 may be located in line with the main gas line 120 and upstream of the first pipe section 125 and the second pipe section 130. The pressure controller 150 may operate according to a desired setpoint. In some embodiments, the controller 110 may provide the pressure controller 150 with a setpoint via a signal.
[0032] In various embodiments, and with reference to Figures 2 to 6, the reactor 105 may comprise a lower chamber 205 and a shower head 210 positioned above the lower chamber 205. The reactor 105 may further comprise a spacer plate 215 positioned between the lower chamber 205 and the shower head 210. In various embodiments, the spacer plate 215 may form a ring shape with an opening 500 in the center. The spacer plate 215 may further comprise a lip 260 extending radially inward and forming the opening 500. In various embodiments, the spacer plate 215 may comprise an upward-facing top surface 245. The top surface 245 may comprise an annular groove 230. The groove 230 may be positioned radially outward from the lip 260. The spacer plate 215 may further comprise a channel 265 that is in fluid communication with the groove 230. The spacer plate 215 may be formed from aluminum, nickel alloy, titanium, stainless steel, or a combination thereof.
[0033] In various embodiments, the spacer plate may further include an inlet opening 235. The inlet opening 235 may be horizontally positioned and connected to the gas line 120. The inlet opening 235 may be in fluid communication with the channel 265.
[0034] In various embodiments, the reactor 105 may further include a flow distribution ring 315 configured to evenly distribute an inert gas around the substrate 225. The flow distribution ring 315 may have a plurality of openings 600 extending from the top surface of the flow distribution ring 315 to the bottom surface of the flow distribution ring 315. In various embodiments, the plurality of openings 600 are oriented vertically. The plurality of openings 600 may be in fluid communication with the channel 265. In exemplary embodiments, the flow distribution ring 315 is sized and shaped to fit within the groove 230. In exemplary embodiments, the flow distribution ring 315 may have a width W1 in the range of 10 mm to 15 mm. The flow distribution ring 315 may be formed from aluminum, nickel alloy, titanium, stainless steel, or a combination thereof.
[0035] In various embodiments, the reactor 105 may further include an upper ring 300 configured to direct the gas flow laterally across the spacer plate 215. The upper ring 300 may be positioned above the spacer plate 215 and extend radially inward toward the susceptor support assembly 220. The upper ring 300 may be attached to the spacer plate 215, for example, by screws. In various embodiments, the upper ring 300 may be positioned to allow gas to flow from the channel 265 into a first gap 310 formed between the upper ring 300 and the spacer plate 215. The first gap 310 may have a height G1 in the range of 1 mm to 5 mm. A second gap 305 may be formed between the inner edge of the upper ring 300 and the susceptor support assembly 200. The second gap 305 may have a width in the range of 2 mm to 5 mm. The first gap 310 may be in fluid communication with the second gap 305 to allow gas to flow into the reaction space 270.
[0036] In various embodiments, the system 100 may further comprise a susceptor support assembly 220 located within the reactor 105. The susceptor support assembly 220 may comprise a surface for supporting a substrate 225 and a heater (not shown) for heating the substrate 225. The heater may be embedded within the susceptor support assembly 220. For loading / unloading the substrate 225, the susceptor support assembly 220 may be configured to be movable vertically (up and down) by being connected to a drive unit (not shown). In exemplary embodiments, the susceptor support assembly 220 may further comprise a projection 325 along the outer edge of the susceptor support assembly 220. The projection 325 may comprise an annular channel 340 having a seal 250 located within the channel 340. The seal 250 may be a metal seal such as an e-seal.
[0037] In various embodiments, the shower head 210 may be positioned adjacent to the lower chamber 205. For example, the shower head 210 may be positioned on the side wall of the lower chamber 205. In some embodiments, the shower head 210 may be fixed to the side wall, while in other embodiments, the shower head 210 may simply rest on the side wall of the lower chamber 205. In various embodiments, the shower head 210, together with the side wall of the lower chamber 205, forms an enclosed space including the reaction space 270.
[0038] In various embodiments, the showerhead 210 may include an inlet plenum 275 configured to receive gas from an inert gas source 115. For example, the inlet plenum 275 may be connected to the inert gas source 115 via a main gas line 120. The inlet plenum 275 may be in fluid communication with the reaction space 270 through a plurality of through-holes in the showerhead 210.
[0039] During operation, and referring to Figures 1-6, the system 100 may provide a flow pattern 350 to prevent the accumulation of chemicals in undesirable areas of the reactor 105. For example, gas may flow into the reactor 105 from an inert gas source 115 through the main gas line 120. In particular, the gas may flow into the inlet opening 235 of the spacer plate 215, through the channel 265, and then through a plurality of openings 600 in the flow distribution ring 315. The gas may exit the plurality of openings 600 and continue to flow into the reaction space 270 through a first gap G1 and a second gap G2. The flow pattern 350 may provide a continuous gas curtain around the susceptor support assembly 220 and the substrate 225. The flow pattern 350 may prevent accumulation in the cavity between the spacer plate 215 and the susceptor support assembly 220. The flow pattern 350 may also prevent accumulation on the seal 250 and / or in the channel 340.
[0040] During operation, the controller 110 may control the operation of the first valve 135 and the second valve 140 to provide a desired flow rate into the reactor 105. For example, in the case of an ALD (atomic layer deposition) process, during a pulse (dose) step, the controller 110 may open the second valve 140 and close the first valve 135, thereby allowing the gas to flow through the second pipe section 130 with a higher flow rate than the first pipe section 125. Also, during a purge step, the controller 110 may close the second valve 140 and open the first valve 135, thereby allowing the gas to flow through the first pipe section 125 with a lower flow rate than the second pipe section 130. Providing a low flow rate during the purge step can prevent turbulence at the edges of the substrate 225. Providing a low flow rate during the purge step can also allow the precursor to be discharged from the reaction space 270. By providing a high flow rate during the pulse process, an additional inert gas flow is provided around the susceptor (outside the wafer and reaction space 270), creating a higher pressure zone that acts to reduce outflow from the reaction space 270. This higher pressure zone created by the inert gas flow can reduce precursor outflow. This can increase precursor utilization and reduce precursor consumption / waste. Note that the choice between high and low flow rates may be used in other processes or ALD processes.
[0041] In the preceding description, the technology was explained with reference to specific exemplary embodiments. The specific embodiments illustrated and described are illustrative of the technology and its best form and are not intended to limit the scope of the technology in any way. Also, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the method and system may not be described in detail. Furthermore, the connection lines shown in various figures are intended to represent exemplary functional relationships and / or processes between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems.
[0042] This technology has been described with reference to specific exemplary embodiments. However, various modifications and changes can be made without departing from the scope of this technology. This description and drawings are not restrictive but are considered illustrative, and all variations are intended to be included within the scope of this technology. Accordingly, the scope of this technology should be determined not merely by the specific examples described above, but by the general embodiments described and their legal equivalents. For example, the steps described in one embodiment of a method or process may be performed in any order unless otherwise expressly specified, and are not limited to the express order presented in a particular embodiment. Furthermore, the components and / or elements described in one embodiment of any apparatus may be assembled or configured to operate in various ways to produce substantially the same results as in this technology, and are not limited to the specific configurations described in a particular embodiment.
[0043] Benefits, other advantages, and solutions to problems have been described above with reference to specific embodiments. However, any benefit, advantage, solution to a problem, or any element that may produce or make more pronounce any particular benefit, advantage, or solution is not to be construed as an important, required, or essential feature or component.
[0044] The terms “comprises” and “comprising,” or any variation thereof, are intended to indicate non-exclusive inclusion, meaning that a process, method, article, composition, or apparatus comprising the listed elements may include not only those listed elements but also other elements not expressly listed or specific to such process, method, article, composition, or apparatus. In addition to those not specifically listed, other combinations and / or modifications of the above-mentioned structures, arrangements, uses, proportions, elements, materials, or components used in the practice of this art may be modified or otherwise specifically adapted to specific environments, manufacturing specifications, design parameters, or other operating requirements without departing from their general principles.
[0045] The present technology has been described above with reference to exemplary embodiments. However, modifications and alterations may be made to the exemplary embodiments without departing from the scope of the present technology. These and other modifications are intended to be within the scope of the present technology as expressed in the following claims. [Explanation of symbols]
[0046] 100 Systems 105 Reactor 110 Controller 115 Inert gas source 120 Gas Line 125 First pipe section 130 Second pipe section 135 First Defense 140 Second valve 145 Container 150 Pressure Controller 160 limiter 200 Suscepter Support Assembly 205 Lower Chamber 210 Shower Head 215 Spacer Plate 220 Susceptor Support Assembly 225 Base material 230 Groove 235 Inlet opening 245 Top 250 stickers 260 Lip 265 channels 270 Reaction Space 275 Entrance Plenum 300 Top Ring 305 The second gap 310 The first gap 315 Distribution Ring 325 Protrusion 340 channels 350 patterns 500 opening 600 aperture
Claims
1. It is a spacer plate, grooves and A spacer plate having an inlet opening that is in fluid communication with the groove, A flow distribution ring disposed within the groove, comprising a flow distribution ring having a plurality of openings, An apparatus comprising an upper ring positioned above the spacer plate and the flow distribution ring.
2. The apparatus according to claim 1, wherein the plurality of openings of the flow distribution ring are oriented vertically and are in fluid communication with the grooves.
3. The apparatus according to claim 1, wherein the groove is located within the upper surface of the spacer plate.
4. The apparatus according to claim 1, wherein the groove is annular.
5. The apparatus according to claim 1, wherein the inlet opening is arranged horizontally and connected to a gas line.
6. The apparatus according to claim 1, wherein the upper ring comprises a lip extending radially inward.
7. The apparatus according to claim 6, wherein the lip is separated from the spacer plate by a gap.
8. The apparatus according to claim 1, wherein the spacer plate has a lip that extends radially inward and overlaps with the outer edge of the support assembly.
9. The spacer plate is formed from at least one of aluminum, nickel, stainless steel, and titanium. The apparatus according to claim 1, wherein the flow distribution ring is formed from at least one of aluminum, nickel, stainless steel, and titanium.
10. The apparatus according to claim 1, wherein the upper ring is formed from at least one of ceramic and quartz.
11. It is a reactor, Lower chamber and A shower head positioned above the lower chamber, A spacer plate disposed between the lower chamber and the shower head, An annular groove in the upper surface of the spacer plate, Entrance opening, and A spacer plate having a first lip extending radially inward, A flow distribution ring having a plurality of openings arranged within the annular groove and communicating with the inlet opening, A support assembly disposed within the reactor, wherein the first lip of the spacer plate overlaps with the outer edge of the susceptor support assembly, A reactor comprising an upper ring connected to the upper surface of the spacer plate.
12. The reactor according to claim 11, wherein the inlet opening is arranged horizontally and connected to an inlet port located on the outer surface of the reactor.
13. The reactor according to claim 11, wherein the upper ring comprises a second lip extending radially inward.
14. The reactor according to claim 13, wherein the second lip of the upper ring is separated from the spacer plate by the first gap.
15. The reactor according to claim 11, further comprising a seal disposed between the first lip of the spacer plate and the outer edge of the susceptor support assembly.
16. The reactor according to claim 13, wherein the second lip of the upper ring is separated from the susceptor support assembly by a second gap, and the second gap is arranged as an annular ring.
17. It is a reactor, Lower chamber and A shower head positioned above the lower chamber, A spacer plate disposed between the lower chamber and the shower head, An annular groove in the upper surface of the spacer plate, Entrance opening, and A spacer plate having a first lip extending radially inward, A flow distribution ring having a plurality of openings arranged within the annular groove and communicating with the inlet opening, A susceptor support assembly disposed within the reactor, wherein the first lip of the spacer plate overlaps with the outer edge of the susceptor support assembly, A reactor comprising an upper ring connected to the upper surface of the spacer plate, A gas line connected to the inlet opening, comprising a first pipe section and a second pipe section, wherein the first pipe section and the second pipe section are parallel to each other, A system comprising a pressure control device located upstream of the first pipe section and the second pipe section.
18. The system according to claim 17, further comprising a first valve disposed along the first pipe section and a second valve disposed within the second pipe section.
19. The system according to claim 17, wherein the gas line is further connected to an inert gas source.
20. The system according to claim 18, further comprising a controller configured to communicate with the first valve and the second valve and to actuate the first valve and the second valve.