Hydroxyl combustion oxidation accelerated by orifice

Abstract

A system and method for orifice-assisted hydroxyl combustion oxidation includes introducing a first gas through at least a first orifice into a processing chamber having a substrate placed on a substrate support. A second gas is introduced into the processing chamber through a plurality of second orifices. The plurality of second orifices are oriented substantially perpendicular to at least the first orifice. Radicals are generated as a function of the first and second gases while the chamber is heated.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure generally relate to processing chambers for processing substrates and related methods. [Background technology]

[0002]

[0002] In processing substrates such as semiconductor substrates, the substrate is placed on a support in a processing chamber, and appropriate processing conditions are maintained within the processing chamber. For example, to chemically process the substrate, the substrate can be oxidized in a controlled oxidation process. The substrate can be oxidized, for example, by an array of chemicals placed above and / or below the substrate in the chamber. The oxidation process can be used, for example, to oxidize silicon nitride to silicon oxide or silicon oxynitride.

[0003]

[0003] It has been observed that variations in the oxidation process across the entire substrate can lead to non-uniform treatment of the substrate. Currently, due to low pressure and oxygen radical requirements, e.g., less than 10 Torr, much non-uniform oxidation occurs in various substrate regions, e.g., the proximal or distal portions of the memory holes. Unfortunately, high-pressure oxidation processes have been largely unsuccessful because the oxidation radicals are rapidly cooled or decayed. Radicals from the high-pressure oxidation process are formed and cannot penetrate sufficiently into the memory holes of the substrate, thus ensuring a uniform oxidation reaction. This is further complicated when using memory holes with high aspect ratios, where the surface area continues to increase by 10-20% for each node of the memory hole.

[0004]

[0004] Therefore, improved methods and apparatus for the oxidation process are needed. [Overview of the Initiative]

[0005]

[0005] In one embodiment, the present disclosure provides a processing chamber. The processing chamber includes a substrate support. The processing chamber includes a plurality of orifices, including a first orifice and a plurality of second orifices. The first orifice is positioned along a first side of the chamber and directed toward a first position in the chamber. The plurality of second orifices are positioned along a second side of the chamber and directed toward a first position in the chamber. The plurality of second orifices are substantially perpendicular to at least the first orifice. The processing chamber includes a controller. The controller is configured to heat the processing chamber, inject a first gas from at least the first orifice, inject a second gas from the plurality of second orifices, and generate radicals as a function of heat, the first gas, and the second gas.

[0006]

[0006] In another embodiment, the present disclosure provides a method for orifice-assisted hydroxyl combustion oxidation. The method includes introducing a first gas into a processing chamber using at least a first orifice positioned along a first side of the chamber and directed to a first position in the chamber via a controller. A second gas is introduced into the processing chamber using a plurality of second orifices positioned along a second side of the chamber and directed to a first position via a controller. The plurality of second orifices are directed substantially perpendicular to at least the first orifice. While the chamber is heated, radicals are generated as a function of the first and second gases.

[0007]

[0007] In another embodiment, the present disclosure provides a computer-readable medium. The computer-readable medium is configured to introduce a first gas into a processing chamber via a controller using at least a first orifice positioned along a first side of the chamber and directed toward a first position in the chamber. A second gas is introduced into the processing chamber via a controller using a plurality of second orifices positioned along a second side of the chamber and directed toward a first position. The plurality of second orifices are directed substantially perpendicular to at least the first orifice. While the chamber is heating, radicals are generated as a function of the first and second gases.

[0008]

[0008] To allow for a more detailed understanding of the above-mentioned features of this disclosure, a more specific description of this disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that since this disclosure may also permit other equally valid embodiments, the accompanying drawings show only exemplary embodiments and should therefore not be considered to limit the scope of this disclosure. [Brief explanation of the drawing]

[0009] [Figure 1] An exemplary rapid heat treatment chamber having a substrate support according to an embodiment of the present disclosure is schematically shown. [Figure 2] This is a schematic diagram of a cross-sectional view of a support ring according to an embodiment of the present disclosure. [Figure 3] A diagram of a processing chamber having a plurality of first orifices and a plurality of second orifices according to an embodiment of the present disclosure is shown. [Figure 4A-4B] Figure 4A shows a diagram of a processing chamber having a plurality of first orifices and a plurality of second orifices according to an embodiment of the present disclosure. Figure 4A shows a diagram of a substrate chamber having four high-speed orifices and a plurality of second orifices. Figure 4B shows a diagram of a substrate chamber having six first orifices and a plurality of second orifices. [Figure 5]This is a schematic diagram of an orifice-assisted hydroxyl combustion oxidation method according to an embodiment of the present disclosure. [Figure 6A-6C] Figure 6A shows a schematic diagram of a memory hole in a substrate according to an embodiment of the present disclosure. Figure 6B shows the memory hole before oxidation. Figure 6C shows the memory hole after hydroxyl radical combustion oxidation. [Figure 7] The plume spectrum of radical oxidation on a substrate according to an embodiment of this disclosure is shown. [Modes for carrying out the invention]

[0010]

[0016] To facilitate understanding, the same reference numerals were used to indicate identical elements common to multiple figures where possible. It is believed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0011]

[0017] This disclosure provides a system for providing a high-pressure oxidation process while maintaining conformity, throughput, and oxide quality. In certain embodiments, the system may allow the formation of increased oxygen radicals or increased hydroxide radicals, which can be used to oxidize the outer layer of memory pores.

[0012]

[0018] In certain embodiments, the system can perform a high-pressure oxidation reaction for a fuel and a plurality of orifices or nozzles that facilitate the oxidative combustion reaction. The orifices or nozzles may be injected with one or more reactive gases, such as hydrogen gas, oxygen gas, or an inert gas. The orifices or nozzles may provide a crossflow with a gas velocity sufficient to spread the combustion reactants onto a wafer or substrate that facilitates a uniform oxide layer of SiO2, so that a high-pressure chamber may be utilized.

[0013]

[0019] Processing chamber

[0020] Figure 1 schematically shows a rapid heat treatment chamber 10. A substrate 12, such as a semiconductor substrate like a silicon substrate to be heat treated, enters the processing area 18 of the processing chamber 10 through a valve or access port 13. The substrate 12 is supported at its periphery by an annular support ring 14. An edge lip 15 extends inward from the annular support ring 14 and contacts the periphery of the substrate 12. The substrate can be oriented such that processed features 16 already formed on the front surface of the substrate 12 face upward toward the processing area 18 defined above by a transparent quartz window 20. That is, the front surface of the substrate 12 faces the array of lamps 26. The front surface of the substrate 12 with the processed features formed may face away from the array of lamps 26, i.e., toward the pyrometer 40. In contrast to the schematic diagram, most of the features 16 do not project a substantial distance beyond the front surface of the substrate 12, and the patterning is within and near the plane of the front surface.

[0014]

[0021] The substrate is passed between paddles or robotic blades (not shown), and as the substrate is carried into the processing chamber and lifted onto the support ring 14, several lift pins 22, such as three lift pins, can be raised and lowered to support the back side of the substrate 12. The radiant heating device 24 is positioned above the window 20 and is configured to direct radiant energy through the window 20 toward the substrate 12. Within the processing chamber 10, the radiant heating device may include a number of 409 high-intensity tungsten halogen lamps 26, each placed in a hexagonal, densely packed array of reflecting tubes 27 arranged above the window 20. The array of lamps 26 is sometimes called a lamp head. The array of lamps 26 facilitates the heat treatment of the substrate. However, it is considered that other radiant heating devices may be substituted. Generally, this includes resistance heating to rapidly raise the temperature of the radiant source. Suitable lamp examples include mercury vapor lamps having a glass or silica envelope surrounding a filament, and flash lamps having a glass or silica envelope surrounding a gas such as xenon, which provides a heat source when the gas is excited. As used herein, the term lamp is intended to cover a lamp including an envelope surrounding a heat source. The “heat source” of a lamp refers to a material or element that can raise the temperature of the substrate, such as a filament or gas that can supply energy, or a solid area of ​​a material that injects radiation, such as an LED or solid-state laser and laser diode.

[0015]

[0022] As used herein, rapid thermal processing or RTP refers to an apparatus or process that can uniformly heat a substrate at a rate of about 50 °C / second or greater, for example, at a rate of about 100 °C / second to 150 °C / second and about 200 °C / second to 400 °C / second. The temperature can be uniformly heated to a temperature range from about 700 °C to about 1,000 °C, for example, about 700 °C, about 800 °C, about 900 °C, about 1,000 °C, etc. The temperature can be uniformly heated to up to about 800 °C. A typical ramp-down (cooling) rate within the RTP chamber is in the range of about 80 °C / second to 150 °C / second. In some processes carried out within the RTP chamber, temperature variations across the substrate of less than a few degrees Celsius are utilized. An RTP chamber having such a heating control system can anneal samples in less than 5 seconds, for example less than 1 second, and in some embodiments, in milliseconds.

[0016]

[0023] By controlling the temperature of the entire substrate 12 to a precisely defined temperature across the entire substrate 12, the uniformity of the processing is improved. One passive means of improving uniformity may include a reflector 28 positioned below the substrate 12. The reflector 28 extends parallel to and above an area larger than the substrate 12. The reflector 28 efficiently reflects thermal radiation emitted from the substrate 12 back to the substrate 12, thereby increasing the apparent emissivity of the substrate 12. The distance between the substrate 12 and the reflector 28 may be between approximately 3 mm and 9 mm, and the aspect ratio of the width to the thickness of the cavity is advantageously greater than 20. The top of the reflector 28, which may be made of aluminum and have a highly reflective surface coating or a multilayer dielectric interference mirror, and the back of the substrate 12 form a reflective cavity to increase the effective emissivity of the substrate, thereby improving the accuracy of temperature measurement. In certain embodiments, the reflector 28 may have a more irregular surface or a black or other colored surface to more closely resemble a blackbody wall. The reflector 28 may be deposited on the second wall 53. The second wall 53 is a water-cooled base 53 made of metal to act as a heat sink for excess radiation from the substrate, especially during cooling. Thus, the processing area of ​​the processing chamber 10 has at least two substantially parallel walls, of which the first wall is a window 20 made of a material transparent to radiation, such as quartz, and the second wall 53, which is substantially parallel to the first wall and made of a metal that is not significantly transparent.

[0017]

[0024] One method to improve uniformity involves supporting a support ring 14 on a rotatable cylinder 30 magnetically coupled to a rotatable flange 32 located outside the processing chamber 10. A motor (not shown) rotates the flange 32, and thus rotates the substrate around its center 34. The center 34 of the substrate is also the centerline of the generally symmetrical chamber. Alternatively, the bottom of the rotatable cylinder 30 may be a magnetically levitated cylinder that is held in place by magnets located within the rotatable flange 32 and rotates by rotating a magnetic field within the rotatable flange 32 from a coil within the rotatable flange 32.

[0018]

[0025] Another way to improve uniformity is to divide lamp 26 into zones generally arranged in a ring around central axis 34. The control circuit varies the voltage supplied to lamps 26 in different zones, thereby adjusting the radial distribution of the radiant energy. The dynamic control of zoned heating is effected by one or more pyrometers 40 connected through one or more optical light pipes 42 arranged to face the back side of substrate 12 through an aperture of reflector 28 to measure the temperature across the radius of rotating substrate 12. The light pipes 42 can be formed in various structures including sapphire, metal, and silica fibers. The computerized controller 44 receives the output of pyrometers 40 and in response controls the voltage supplied to the various rings of lamps 26, thereby dynamically controlling the radiant heating intensity and pattern during processing. The pyrometers generally measure the intensity of light within a narrow wavelength bandwidth, for example 40 nm, within the range of about 700 nm to about 1000 nm. The controller 44 or other instrumentation converts the light intensity to temperature through the well-known Planck distribution of the spectral distribution of the light intensity radiated from a blackbody maintained at that temperature. However, high temperature measurements are affected by the emissivity of a portion of the scanned substrate 12. The emissivity ε can vary from 1 for a blackbody to 0 for a perfect reflector, and thus is the inverse measurement of the reflectivity R = 1 - ε of the back side of the substrate. The back surface of the substrate is typically uniform so that a uniform emissivity is expected, but the composition of the back surface can vary depending on previous processing. High temperature measurements can be improved by further including an emissivity meter that optically probes the substrate to measure the emissivity or reflectivity of a portion of the substrate within the relevant wavelength range, and a control algorithm within the controller 44 that includes the measured emissivity.

[0019]

[0026] substrate support

[0027] Figure 2 is a schematic cross-sectional side view of a support ring 200 that may be used in place of the support ring 14 in Figure 1 according to one embodiment. The support ring 200 shown in Figure 2 may be placed in a processing chamber, for example, the rapid heat treatment chamber 10 shown in Figure 1, and may extend radially inward along the inner circumferential surface 60 of the processing chamber 10. The support ring may be a continuous ring body that substantially surrounds the outer circumference of the substrate (or, in some embodiments, may be separate ring-shaped bodies).

[0020]

[0028] In one embodiment shown in Figure 2, the support ring 200 generally includes an annular body having a central opening. The support ring 200 has an outer ring 202 and an inner ring 204. The outer ring 202 connects to the inner ring 204 through a flat portion 206 that extends radially inward from the inner circumference 203 of the outer ring 202 to the outer circumference 205 of the inner ring 204. The outer ring 202 may be supported by a cylinder 230, such as the rotatable cylinder 30 shown in Figure 1. In a top-heated configuration, the rotatable cylinder 230 may contact the support ring 200 just inside the outer ring 202. That is, the bottom surface of the outer ring 202 is on the opposite side from the top surface 206a of the flat portion 206, preventing light leakage and providing mechanical stability. The support ring 200 further includes an edge lip 208 that extends radially inward from the inner circumference 207 of the inner ring 204 and forms a support ledge that supports the back surface 212b of the substrate 212 near the outer edge of the substrate 212.

[0021]

[0029] The substrate support 210 may be a continuous ring body positioned around the outer circumference of the edge lip 208. A substrate support 210 having a continuous ring body may be advantageous regardless of the heating lamp configuration. This is because the continuous ring body prevents potential light leakage problems by preventing the light from the source radiation in the processing chamber from reaching the pyrometer positioned opposite the source radiation. In addition, the continuous ring body is considered to provide better and more stable support to the substrate 212 because the substrate 212 is rotatably supported by the substrate support 210 during the heating process.

[0022]

[0030] The substrate support 210 may be formed on the upper surface 208a of the edge lip 208 using a laser processing technique or any suitable technique. The substrate support 210 may be any suitable shape, such as a rectangular, rhombus, square, hemisphere, hexagon, triangular projection, or a mixture of projections of different shapes. The substrate support 210 may be any shape that reduces the contact surface with the substrate. For example, the substrate support 210 may have a hemispherical upper surface. A hemispherical upper surface may be advantageous in terms of effective thermal mass reduction because it can further reduce the surface contact area between the edge lip and the substrate by changing the surface contact to continuous line contact or discontinuous line contact.

[0023]

[0031] In this disclosure, “line contact” may refer to a line less than approximately 500 μm, for example, between approximately 5 μm and approximately 200 μm, for example, a line having a radial width of 50 μm. The substrate support 210 supports the substrate with minimal contact area and minimal heat transfer between the edge lip 208 and the substrate 212. For a nominal 12-inch (300 mm) substrate, the contact area between the edge lip 208 and the substrate is approximately 15 cm². 2 For example, about 5cm 2 For example, about 1 cm 2 From approximately 3cm 2 It may be up to this point. The width of the lines that physically contact the back surface of the substrate is expected to vary depending on the shape of the substrate support 210. The shape and / or dimensions of the substrate support 210 are also expected to vary as long as the contact area between the substrate support 210 and the back surface 212b of the substrate 212 is minimized and the substrate 212 is securely supported. In one embodiment, the dimensions of the substrate support 210 may vary over a wide range, for example, from about 0.1 mm to about 10 mm, for example, from about 0.2 mm to about 2 mm, for example, with a width of about 1 mm.

[0024]

[0032] By converting surface contact to continuous line contact, the contact area available for conductive heat transfer between the edge lip 208 of the support ring 200 and the substrate 212 is substantially reduced, thereby eliminating or minimizing excessive temperature gradients within the substrate during heat treatment, even under reduced pressure of approximately 50 Torr to 200 Torr (e.g., approximately 50 Torr, 60 Torr, 70 Torr, 80 Torr, 90 Torr, 100 Torr, 110 Torr, 120 Torr, 130 Torr, 140 Torr, 150 Torr, 160 Torr, 170 Torr, 180 Torr, 190 Torr, 200 Torr, etc.). Reducing the surface contact area between the substrate 212 and the support ring 200 also allows for better control of the thermal mass discontinuity caused by the overlap between the substrate 212 and the edge lip 208. Therefore, the distortion of the thermal gradient generated by heat loss around the edges of the substrate is reduced, resulting in an improved overall substrate temperature profile with minimal edge temperature gradient. Reducing the contact area between the edge lip 208 and the substrate 212 further reduces the possibility of particle contamination in the processing chamber. With respect to the upper radiant heating configuration shown in Figure 1, since the substrate is thermally separated from the edge lip 208 through the substrate support 210, the radiation from the radiant heat source can be directed to heat the substrate without excessive concern about discontinuities in thermal mass in overlapping regions. Thus, the substrate support of the present invention can be translated into a faster achievable heating gradient or a reduction in spike power conditions.

[0025]

[0033] The substrate support 210 may be made of a material transparent to radiation in the frequency range used for measuring the temperature of the substrate. In one embodiment, the substrate support 210 is made of silicon carbide. Other materials such as silicon carbide alloys, ceramics, or high-temperature materials such as amorphous silica, Al2O2, ZrO2, Si3N4, or similar materials are also conceivable. The substrate support 210 may optionally be coated with silicon dioxide (SiO2) or any other suitable material to prevent Si-Si bonding with the back surface 212b of the substrate 212 at high temperatures, thereby potentially allowing the substrate to adhere to the substrate support. The support ring 200 may be made of a material similar to the substrate to minimize the mismatch in absorptive / reflectance between the substrate and the support ring. In one embodiment, the support ring 200 is made of silicon carbide. In certain embodiments, the support ring 200 may optionally be coated with a layer of polycrystalline silicon (polysilicon) to make it opaque to radiation in the frequency range used for measuring the temperature of the substrate in the heat treatment chamber. In such cases, the thickness of the polysilicon layer may vary in the range of approximately 20 μm to approximately 50 μm, depending on the thickness of the support ring 200, or, for example, depending on the opacity of the SiC used within the support ring 200.

[0026]

[0034] The processing chamber 10 operates at a pressure of approximately 50 Torr to approximately 250 Torr. The processing chamber 10 includes lamp heating, pyrometer temperature control, or other substrate heating techniques for heating the substrate inside the chamber, for example, a resistance heater or induction heater that rotates around the substrate to provide uniform heating.

[0027]

[0035] orifice

[0036] Referring here to Figure 3, the processing chamber 10 may have orifices. The processing chamber 10 may have a first orifice 301 and a plurality of second orifices 302 extending toward the substrate 212. The orifices may have diameters ranging from about 30 mils to about 150 mils, for example, about 30 mils, about 40 mils, about 50 mils, about 60 mils, about 70 mils, about 80 mils, about 90 mils, about 100 mils, about 110 mils, about 120 mils, about 130 mils, about 140 mils, about 150 mils, etc.

[0028]

[0037] The first orifice 301 or a plurality of second orifices 302 are configured to inject one or more gases. One or more gases are injected toward the substrate 212, as shown in Figure 3, and include a reactive gas (e.g., H2, O2, etc.) and / or an inert gas (e.g., N2, O2, etc.). 2、 This may include He, Ar, etc. For example, but not limited to, one or more gases may be O2 with an inert gas such as argon or nitrogen. As a further non-limiting example, one or more gases may be H2 with an inert gas such as argon or nitrogen. One or more gases may include a combination of a reactive gas (e.g., H2 and O2, etc.) and an inert gas (e.g., N2, He, Ar, etc.) directed toward the substrate 212, as shown in Figure 3. For example, but not limited to, one or more gases may be a combination of pre-mixed amounts of H2 and O2 and an inert gas such as argon or nitrogen. As a further non-limiting example, O2 is injected through the first orifice 301 and H2 is injected through a plurality of second orifices 302.

[0029]

[0038] The first orifice 301 is positioned along the first side 304 of the processing chamber 10. The first orifice 301 may be positioned to inject one or more gases substantially perpendicularly from the first side 304 of the processing chamber 10, as shown in Figure 3. The multiple second orifices 302 may be positioned along the second side 305 of the processing chamber 10, with the second side intersecting the first side substantially perpendicularly, as shown in Figure 3. The multiple second orifices 302 are positioned to inject one or more gases substantially perpendicularly from the second side 305 of the processing chamber 10, as shown in Figure 3.

[0030]

[0039] The processing chamber 10 may include a plurality of first orifices 401, as shown in Figures 4A and 4B. The plurality of first orifices 401 may be positioned along a first side 304 or a third side 402 of the processing chamber 10, as shown in Figures 4A and 4B, with the first side 304 and the third side 402 of the processing chamber being substantially parallel to each other. In another embodiment, the plurality of first orifices 401 may be positioned along a first side 304 and a third side 402 of the processing chamber 10, as shown in Figures 4A and 4B, with the first side 304 and the third side 402 of the processing chamber being substantially parallel to each other. The multiple first orifices 401 may range from about 1 to about 15 orifices (for example, from about 3 to about 8 orifices, for example, about 1 orifice, about 2 orifice, about 3 orifice, about 4 orifice, about 5 orifice, about 6 orifice, about 7 orifice, about 8 orifice, about 9 orifice, about 11 orifice, about 12 orifice, about 13 orifice, about 14 or 4 orifice, about 15 orifice, etc.).

[0031]

[0040] The multiple second orifices 302 may be positioned along the second side of the processing chamber, with the second side perpendicular to the first and third sides, as shown in Figure 3. The multiple second orifices 302 may range from about 1 to about 15 orifices (for example, about 3 to about 8 orifices, e.g., about 1 orifice, about 2 orifice, about 3 orifice, about 4 orifice, about 5 orifice, about 6 orifice, about 7 orifice, about 8 orifice, about 9 orifice, about 11 orifice, about 12 orifice, about 13 orifice, about 14 or 4 orifice, about 15 orifice, etc.).

[0032]

[0041] The placement and orientation of the orifice facilitate improved mixing of the process gas on the substrate 212, while reducing undesirable upstream mixing of the process gas, such as mixing that can occur when using a single gas inlet or when using multiple gas inlets on the same side of the processing chamber. The improved gas introduction in this disclosure results in improved radical generation and sustainability in relatively high-pressure processes, and therefore improves substrate processing. In particular, oxidation of the memory hole sidewalls is improved through improved fit / uniformity.

[0033]

[0042] In some embodiments, the processing chamber 10 may include four first orifices and a number of second orifices, e.g., about 1 to about 10, e.g., about 10, as shown in Figure 4A. The processing chamber may include six first orifices and a number of second orifices, e.g., about 1 to about 10, e.g., about 10, as shown in Figure 4B. The number of first orifices and the number of second orifices improves the coverage and reaction efficiency between the hydrogen molecular gas and the oxygen molecular gas. The improved reaction efficiency results in more uniform oxidation of the substrate memory holes, as described later.

[0034]

[0043] circuit board memory holes

[0044] The substrate 212 may include a plurality of memory holes. As used herein, “memory hole” refers to a vertical channel extending to two or more physical levels of the substrate 212. A memory hole may include a vertical trench formed to divide one or more memory hole structures into two or more vertical “NOT AND” (NAND) strings. A memory hole may include a vertical channel extending to layers 32, 48, 64, 96, 112, or more of the substrate 212.

[0035]

[0045] Multiple memory holes have substantially vertical and uniform vertical trenches. Multiple memory holes may contain one or more vertical features (e.g., necking, clogging, warping, striations, tapered profiles, sub-recesses, strain, inclination, twist, etc.). Multiple memory holes have a first vertical trench containing a tapered profile extending to 16 layers, and as shown in Figure 6A, a second vertical trench containing a tapered profile extends beyond the first vertical trench to form a shelf.

[0036]

[0046] Multiple memory holes include an outer layer 601 within a vertical trench. The outer layer 601 may include one or more silica substrates, such as layers of silicon nitride, silicon dioxide, etc. For example, but not limited to, the outer layer 601 is a silicon nitride layer. For example, but not limited to, the outer layer 601 is a silicon dioxide layer.

[0037]

[0047] controller

[0048] The processing chamber 10 includes a controller 306. Each controller may be a local controller associated with a corresponding single orifice or group of corresponding orifices, and may be programmed to control them. For example, but not limited to, each local controller 306 may control a single first orifice 301. In a further non-limiting example, the controller 306 may be configured to control a plurality of second orifices 302. In one embodiment, the controller 306 includes an application-specific integrated circuit (ASIC). Each controller 306 may be integrated within the processing chamber 10. Each controller 306 may be connected to a PCB separate from the processing chamber 10. The controller 306 may include an electromagnetic shield. To suppress corrosion, it is assumed that the surface of the controller 306 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic sticking prevention films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), silicon oxide (e.g., SiO2O3). x ), titanium dioxide (e.g., TiO2), etc. 。

[0038]

[0049] Controller 306 receives commands from the master controller via the PCB, or is the master controller itself. Commands may be in the form of signals addressed to a specific device or orifice, such as a particular orifice in the processing chamber. Each controller 306 is programmed to recognize command signals addressed to a device under its authority and to control the orifice according to the received command. For example, but not limited to, each controller 306 is programmed to ignore command signals that are not addressed to any orifice within the controller 306's range.

[0039]

[0050] Each orifice can be individually addressed via a corresponding controller 306, thereby allowing control of the operation of each orifice without changing the operating state of other orifices in the processing chamber 10. Each orifice may be assigned to one or more orifice groups, and each orifice group can be individually addressed via one or more corresponding controllers 306. In such embodiments, the operation of each orifice within a defined group can be controlled without changing the operating state of other orifices not within the defined group.

[0040]

[0051] Oxidation process

[0052] Referring here to Figure 5, the hydroxyl combustion oxidation method 500 includes, in step 501, introducing a first gas into a processing chamber through a first orifice via a controller command. The processing chamber may have a substrate placed inside. The first gas 303 may include reactive gases (e.g., H2, O2) and / or inert gases (e.g., N2, He, Ar). 。 In one embodiment, the first gas 303 contains O2, and the second gas contains H2.

[0041]

[0053] The first gas 303 is injected from the first orifice 301 via the controller 306. The first orifice 301 injects the first gas 303 at concentrations of approximately 5 slm to approximately 40 slm (for example, approximately 5 slm, approximately 6 slm, approximately 7 slm, approximately 8 slm, approximately 9 slm, approximately 10 slm, approximately 11 slm, approximately 12 slm, approximately 13 slm, approximately 14 slm, approximately 15 slm, approximately 16 slm, approximately 17 slm, approximately 18 slm, approximately 19 slm, approximately 20 slm, approximately 21 slm, approximately The gas can be injected toward the substrate 212 at volumetric flow rates of approximately 22 slm, 23 slm, 24 slm, 25 slm, 26 slm, 27 slm, 28 slm, 29 slm, 30 slm, 31 slm, 32 slm, 33 slm, 34 slm, 35 slm, 36 slm, 37 slm, 38 slm, 39 slm, 40 slm, etc. The first orifice 301 can be injected with reactive gas O2 at 8-11 slm and inert gas N2 at 35-45 slm.

[0042]

[0054] The first gas 303 can be injected from the first orifice 301 toward the first position at a gas velocity of approximately 1 m / s to approximately 20 m / s (e.g., approximately 1 m / s, approximately 2 m / s, approximately 3 m / s, approximately 4 m / s, approximately 5 m / s, approximately 6 m / s, approximately 7 m / s, approximately 8 m / s, approximately 9 m / s, approximately 10 m / s, approximately 11 m / s, approximately 12 m / s, approximately 13 m / s, approximately 14 m / s, approximately 15 m / s, approximately 16 m / s, approximately 17 m / s, approximately 18 m / s, approximately 19 m / s, approximately 20 m / s, etc.). The gas velocity is greater than the flame velocity to facilitate the reduction of flame backflow. The first position includes the central opening of the chamber, the edge of the substrate support, or a position equal to the distance between the central opening and the edge of the substrate support, for example, half the radius of the processing chamber. The first gas 303 can be injected from the first orifice toward the substrate 212 at a gas velocity sufficient to spread the gas onto the substrate without concern for the flame velocity extending back through the orifice. For example, the first orifice 301 can inject one or more gases toward the substrate so that the flow exceeds a flame velocity of about 2 m / s to about 10 m / s.

[0043]

[0055] Method 500 includes introducing a second gas into the processing chamber via a controller command using a plurality of second orifices 502. The plurality of second orifices 502 enables an improvement in the efficiency of the oxidation reaction between O2 and H2 due to the volume and spread of the injected H2. 。 The second gas may include a reactive gas (e.g., H2, O2) and / or an inert gas (e.g., N 2 , He, Ar).

[0044]

[0056] The second gas is injected from the second orifice 302 according to the command of the controller 306. The second orifice 302 can inject the second gas toward the substrate 212 at a volumetric flow rate of about 5 slm to about 40 slm (e.g., about 5 slm, about 6 slm, about 7 slm, about 8 slm, about 9 slm, about 10 slm, about 11 slm, about 12 slm, about 13 slm, about 14 slm, about 15 slm, about 16 slm, about 17 slm, about 18 slm, about 19 slm, about 20 slm, about 21 slm, about 22 slm, about 23 slm, about 24 slm, about 25 slm, about 26 slm, about 27 slm, about 28 slm, about 29 slm, about 30 slm, about 31 slm, about 32 slm, about 33 slm, about 34 slm, about 35 slm, about 36 slm, about 37 slm, about 38 slm, about 39 slm, about 40 slm, etc.). The plurality of second orifices 302 can inject a reactive gas of H2 at 20 - 24 slm and an inert gas of N2 at 15 - 25 slm for a substrate with a diameter of 300 mm.

[0045]

[0057] The second gas can be injected from the second orifice 302 toward the first position at a gas velocity of approximately 1 m / s to approximately 20 m / s (for example, approximately 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, 10 m / s, 11 m / s, 12 m / s, 13 m / s, 14 m / s, 15 m / s, 16 m / s, 17 m / s, 18 m / s, 19 m / s, 20 m / s, etc.). The gas velocity is greater than the flame velocity to facilitate improved processing. The second gas is injected from multiple second orifices toward the substrate 212 at a gas velocity sufficient to spread the gas onto the substrate while mitigating flame backflow into the orifices. For example, one or more second gases may be injected toward the substrate such that the flow rate exceeds a flame velocity of approximately 2 m / s to approximately 10 m / s.

[0046]

[0058] Method 500 includes injecting a first gas 303 and a second gas while rotating a substrate support on the rotatable cylinder 30 described above in order to generate radicals in step 503. Method 500 includes injecting the first gas 303 and the second gas while the pressure in the processing chamber is between about 50 Torr and about 200 Torr. For example, the injection of the first gas 303 and the second gas may occur under reduced pressure when the pressure in the processing chamber is between about 50 Torr and about 200 Torr (e.g., about 50 Torr, about 60 Torr, about 70 Torr, about 80 Torr, about 90 Torr, about 100 Torr, about 110 Torr, about 120 Torr, about 130 Torr, about 140 Torr, about 150 Torr, about 160 Torr, about 170 Torr, about 180 Torr, about 190 Torr, about 200 Torr, etc.). Conventionally, pressures such as these quenching radicals can be generated before sufficient processing is performed. However, the gas injection scheme described herein promotes improved radical lifetime so that memory pore processing can occur. The methods and hardware described herein enable the processing of relatively large memory pores while maintaining a fit and / or uniformity of 95% or more (e.g., 99% or more). In addition, since hydroxyl radicals are formed in situ without the use of plasma, relatively high pressures can be used (improving processing uniformity). Otherwise, they would be unusable due to radical quenching that occurs during plasma processing.

[0047]

[0059] The hydroxyl combustion oxidation method 500 involves generating radicals as a function of a first gas and a second gas in the presence of heat. Generating radicals may include generating hydroxyl radicals as a function of a reaction between a first gas 303 and a second gas in the presence of heat. Radicals are generated in the processing space of a processing chamber, on a substrate, with or without a plasma source. For example, hydroxyl radicals can be formed as a function of a reaction between a first gas of oxygen and nitrogen and a second gas of hydrogen and nitrogen during heating. This allows for greater control of the reactants when forming hydroxyl groups compared to elements that require additional elements, such as plasma. In addition, this allows for greater precision in oxidizing substrate features while reducing flame backflow. As a further non-limiting example, hydroxyl radicals can be formed as a function of a reaction between a first gas of oxygen and argon and a second gas of hydrogen and argon during heating. As a result of the reaction between the first gas 303 and the second gas, approximately 5% to approximately 20% (for example, approximately 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, etc.) of the product may be hydroxyl radicals. If hydrogen gas is present in the H2:O2 mixture in amounts exceeding 50 mol% or volume%, hydroxide radicals may be generated in the processing chamber 10 by the reaction between the first gas 303 and the second gas. For example, hydroxide radicals may be formed when the hydrogen gas in the H2:O2 mixture is between 50 mol% or vol% and 80 mol% or vol%.

[0048]

[0060] When radicals are generated, the outer layer 601 (e.g., the sidewall) of the memory holes in the substrate 503 can be oxidized. Oxidizing the outer layer 601 involves oxidizing the silicon nitride layer to a silicon dioxide layer, as shown in Figures 6A to 6C. As shown in Figure 6A, the hydroxyl radical 602 may also be generated via a reaction between a first gas 303 and a second gas, in which the hydroxyl radical flows into the memory holes 603 of the substrate 212. The hydroxyl radical 602 may flow into the memory holes 603 to provide good conformability, as shown in Figure 6B. For example, the hydroxyl radical may flow into the memory holes to provide 99% conformability at 200:1AR in a high partial pressure oxidizing agent 100 Torr treatment chamber. The hydroxyl radical 602 reacts with the silicon nitride outer layer 601, as shown in Figure 6C, oxidizing the outer layer 601 to silicon dioxide.

[0049]

[0061] Oxidation of the outer layer 601 can produce a deposition profile 600, as shown in Figure 7. The deposition profile 600 may show oxidation thicknesses of approximately 10 Å to 100 Å in the outer layer 601, for example, 10 Å to 80 Å, for example, 10 Å to 50 Å, for example, 10 Å to 30 Å. However, oxidation of other thicknesses is also conceivable. The oxidation thickness of the outer layer 601 may be proportional to the amount of hydroxyl radicals produced by the reaction between the first gas 303 and the second gas. The oxidation thickness of the outer layer 601 may also be equal to the amount of hydroxyl radicals produced by the reaction between the first gas 303 and the second gas.

[0050]

[0062] Examples

[0063] Example 1

[0064] Substrates were prepared using the processing chamber described herein. The temperature of the processing chamber was 800°C. The pressure was 90 Torr. The partial pressure of H2 was 21.66 Torr, and the partial pressure of O2 was 9.26 Torr (approximately 10 times that of radical oxidation). Multiple second orifices were injected with H2 at 22 slm and N2 at 20 slm. Multiple first orifices were injected with O2 at 9.4 slm and N2 at 40 slm. The total injection time was 240 seconds. The conformation of the oxidized silicon dioxide was approximately 102%, and the GR was approximately 1.6 A / sqrt. The results are shown in Tables 1 and 2 below. Table 1 TIFF2026514779000002.tif35170Table 2 TIFF2026514779000003.tif35170

[0065] The above relates to embodiments of the present disclosure, but other and further embodiments can be devised without departing from the basic scope thereof, the scope of which will be determined by the claims.

Claims

1. A processing chamber for hydroxyl-accelerated combustion, substrate support, There are multiple orifices, A first orifice positioned along the first side of the chamber and directed toward the first position of the chamber, A plurality of second orifices positioned along the second side of the chamber and directed toward the first position, wherein the plurality of second orifices are substantially perpendicular to at least the first orifice Multiple orifices including It is a controller, Heating the aforementioned chamber, Injecting the first gas through at least the first orifice, Injecting a second gas from the aforementioned plurality of second orifices, Generating radicals as a function of heat, the first gas, and the second gas. A controller configured to perform the following actions A processing chamber equipped with a processing chamber.

2. The first gas is H ２ or O ２ The chamber according to claim 1, wherein the reactive gas contains a reactive gas.

3. The second gas is H ２ or O ２ The chamber according to claim 2, wherein the second gas is a reactive gas containing the first gas.

4. The chamber according to claim 1, wherein the plurality of second orifices include orifices ranging from about 1 to about 15 per face of the chamber.

5. The chamber according to claim 4, wherein the plurality of second orifices are approximately 3 to approximately 8 orifices per face of the chamber.

6. The method according to claim 1, wherein the controller is configured to inject the first gas at a pressure exceeding approximately 50 Torr and at a speed of approximately 1 m / s to approximately 20 m / s.

7. The method according to claim 1, wherein the controller is configured to inject the second gas at a pressure exceeding approximately 50 Torr and at a speed of approximately 1 m / s to approximately 20 m / s.

8. A method for hydroxyl-accelerated combustion, Introducing a first gas into the processing chamber via a controller using at least one first orifice positioned along the first side of the chamber and directed towards the first position of the chamber, Introducing a second gas into the processing chamber via the controller, using a plurality of second orifices positioned along the second side of the chamber and directed toward the first position, wherein the plurality of second orifices are directed substantially perpendicular to at least the first orifice such that the first gas and the second gas intersect at the first position. While the chamber is being heated, radicals are generated as a function of the first gas and the second gas. The method according to claim 1, further comprising:

9. The first gas is H ２ or O ２ The method according to claim 8, wherein the reactive gas contains the active gas.

10. The second gas is H ２ or O ２ The method according to claim 8, wherein the second gas is a reactive gas containing the first gas, and the second gas is different from the first gas.

11. The method according to claim 8, wherein the first gas is injected at a volumetric flow rate of about 5 slm to about 40 slm.

12. The method according to claim 11, wherein the first gas is injected at a volumetric flow rate of approximately 9.4 slm.

13. The method according to claim 8, wherein the first gas is injected at a pressure exceeding approximately 50 Torr and at a speed of approximately 1 m / s to approximately 20 m / s.

14. The method according to claim 13, wherein the first gas is injected at a pressure exceeding approximately 50 Torr and at a speed of approximately 10 m / s.

15. The method according to claim 8, wherein the second gas is injected at a volumetric flow rate of about 5 slm to about 40 slm.

16. The method according to claim 15, wherein the second gas is injected at a volumetric flow rate of approximately 22 slm.

17. The method according to claim 8, wherein the second gas is injected at a pressure exceeding approximately 50 Torr and at a speed of approximately 1 m / s to approximately 20 m / s.

18. The method according to claim 17, wherein the second gas is injected at a pressure exceeding approximately 50 Torr and at a speed of approximately 10 m / s.

19. The method according to claim 8, wherein heating the processing chamber includes heating it to a temperature of about 700°C to about 1,000°C.

20. Computer-readable medium, To introduce a first gas into the processing chamber using at least one first orifice positioned along the first side of the chamber and directed to a first position in the chamber, via a controller, Introducing a second gas into the processing chamber via the controller using a plurality of second orifices positioned along the second side of the chamber and directed toward the first position, wherein the plurality of second orifices are directed substantially perpendicular to at least the first orifice such that the first gas and the second gas intersect at the first position. While the chamber is being heated, radicals are generated as a function of the first gas and the second gas. A computer-readable medium configured to perform the following actions.

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