Low-pressure hydroxyl combustion with orifice encirclement

Abstract

A system and method for hydroxyl-accelerated combustion includes introducing a first gas through at least a first orifice into a processing chamber having a substrate placed on a substrate support. A second gas is introduced into the processing chamber through a plurality of second orifices. The plurality of first and second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. Radicals are generated as a function of the first and second gases while the chamber is heated.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to a processing chamber for processing a substrate and related methods.

Background Art

[0002]

[0002] In the processing of substrates such as semiconductor substrates, the substrate is placed on a support within a processing chamber, and appropriate processing conditions are maintained within the processing chamber. For example, in order to chemically process the substrate, the substrate can be oxidized in a controlled oxidation process. The substrate can be oxidized, for example, by an array of chemicals disposed above and / or below the substrate within the chamber. The oxidation process can be used, for example, to oxidize silicon nitride to silicon oxide or silicon oxynitride.

[0003]

[0003] It has been observed that variations in the oxidation process across the entire substrate can result in non-uniform processing of the substrate. Currently, due to low pressure requirements (e.g., less than 10 Torr), many non-uniform oxidations occur in various substrate regions (e.g., the proximal portion or the distal portion of a memory hole). Unfortunately, high-pressure oxidation processes have been mostly unsuccessful because the oxidation radicals are quenched or rapidly attenuated. Radicals from the high-pressure oxidation process are formed and cannot penetrate sufficiently into the memory holes of the substrate to ensure a uniform oxidation reaction. This is even more complicated when using memory holes with a high aspect ratio, and the surface area continues to increase by 10 - 20% for each node of the memory hole.

[0004]

[0004] Therefore, there is a need for improved methods and apparatuses for the oxidation process.

Summary of the Invention

[0005]

[0005] In one embodiment, the present disclosure provides a processing chamber for hydroxyl-accelerated combustion. The processing chamber includes a substrate support. The processing chamber includes a plurality of alternating orifices, which include a plurality of first orifices and a plurality of second orifices oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least one first orifice of the plurality of first orifices. The processing chamber includes a controller. The controller heats the processing chamber, injects a first gas from the plurality of first orifices and a second gas from the plurality of second orifices to generate radicals as a function of heat, the first gas, and the second gas.

[0006]

[0006] In another embodiment, the present disclosure provides a method for hydroxyl-accelerated combustion. The method includes introducing a first gas by a controller into a processing chamber in which a substrate is placed on a substrate support, using at least a first orifice. A second gas is introduced into the processing chamber by the controller using a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. Radicals are generated as a function of the first gas and the second gas while the chamber is being heated.

[0007]

[0007] In another embodiment, the present disclosure provides a computer-readable medium. The computer-readable medium is configured to be introduced by a controller into a processing chamber having a substrate disposed on a substrate support, using at least a first orifice. A second gas is introduced into the processing chamber by the controller using a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. Radicals are generated as a function of the first and second gases while the chamber is being heated.

[0008]

[0008] To enable a more detailed understanding of the above-mentioned features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the embodiments, and other equally valid embodiments may be permitted. [Brief explanation of the drawing]

[0009] [Figure 1] An exemplary rapid heat treatment chamber having a substrate support according to an embodiment of the present disclosure is schematically shown. [Figure 2] This is a schematic diagram of a cross-sectional view of a support ring according to an embodiment of the present disclosure. [Figure 3] A diagram of a processing chamber having an orifice according to an embodiment of the present disclosure is shown. [Figure 4A-4B] Figure 4A shows a substrate chamber having a plurality of first orifices and a plurality of second orifices according to an embodiment of the present invention. Figure 4A shows a substrate chamber having a first orientation of the first and second orifices. Figure 4B shows a substrate chamber with a second orientation of the first and second orifices. [Figure 5]A diagram of a substrate chamber having a third orientation of a first orifice and a second orifice according to an embodiment of the present invention is shown. [Figure 6] A diagram of a substrate chamber having multiple orifices for injecting a gas mixture is shown. [Figure 7] This is a schematic diagram of an orifice-assisted hydroxyl combustion oxidation method according to an embodiment of the present disclosure. [Figure 8] The diagram shows multiple first orifices surrounding a second orifice. [Figure 9] Figure 9A shows a schematic diagram of memory holes in a substrate according to an embodiment of the present disclosure. Figure 9B shows memory holes before oxidation. Figure 9C shows memory holes after hydroxyl radical combustion oxidation. [Modes for carrying out the invention]

[0010]

[0018] For ease of understanding, the same reference numerals were used to indicate identical elements common to multiple figures where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0011]

[0019] This disclosure provides a system for providing a high-pressure radical oxidation process while maintaining conformity, throughput, and oxide quality. In certain embodiments, the system may allow for the formation of an increase in oxygen radicals or hydroxide radicals for the oxidation process.

[0012]

[0020] In certain embodiments, the system can perform a high-pressure oxidation reaction for a plurality of orifices or nozzles that facilitate a fuel oxidation combustion reaction. The orifices or nozzles may release one or more reactive gases, such as hydrogen gas, oxygen gas, or an inert gas. The orifices or nozzles can provide better spreading of the gas on the wafer, enabling greater control over the shape and location of the oxidation process. For example, the orifices may be oriented so that each second orifice is at least partially surrounded by at least two first orifices to ensure proper combustion oxidation. The location of the oxidation process may be movable or localized to a specific region of the wafer.

[0013] Processing chamber

[0021] Figure 1 schematically shows a rapid heat treatment chamber 10. A substrate 12, such as a semiconductor substrate like a silicon substrate to be heat treated, enters the processing area 18 of the processing chamber 10 through a valve or access port 13. The substrate 12 is supported at its periphery by an annular support ring 14. An edge lip 15 extends inward from the annular support ring 14 and contacts the periphery of the substrate 12. The substrate can be oriented such that processed features 16 already formed on the front surface of the substrate 12 face upward toward the processing area 18 defined above by a transparent quartz window 20. That is, the front surface of the substrate 12 faces the array of lamps 26. The front surface of the substrate 12 with the processed features formed may face away from the array of lamps 26, i.e., toward the pyrometer 40. In contrast to the schematic diagram, most of the features 16 do not project a substantial distance beyond the front surface of the substrate 12, and the patterning constitutes the patterning within and near the plane of the front surface.

[0014]

[0022] Once the substrate is passed between paddles or robotic blades (not shown) and transported into the processing chamber, and lifted onto the support ring 14, several lift pins 22, such as three lift pins, can be raised and lowered to support the back side of the substrate 12. A radiant heating device 24 is positioned above the window 20 and configured to direct radiant energy through the window 20 toward the substrate 12. Within the processing chamber 10, the radiant heating device may include a number of 409 high-intensity tungsten halogen lamps 26, each placed in a hexagonal, densely packed array of reflecting tubes 27 arranged above the window 20. The array of lamps 26 is sometimes referred to as a lamp head. However, it is considered that other radiant heating devices may be substituted. Generally, this includes resistance heating to rapidly raise the temperature of the radiant source. Examples of suitable lamps include mercury vapor lamps with a glass or silica envelope surrounding a filament, and flash lamps with a glass or silica envelope surrounding a gas such as xenon, which provides a heat source when the gas is excited. As used herein, the term "lamp" refers to a lamp that includes an envelope surrounding a heat source. The “heat source” of a lamp refers to a material or element that can raise the temperature of the substrate, such as a filament or gas that can supply energy, or a solid area of ​​a material that injects radiation, such as an LED or solid-state laser and laser diode.

[0015]

[0023] As used herein, rapid heat treatment or RTP refers to an apparatus or process capable of uniformly heating a substrate at a rate of about 50°C / second or higher, e.g., about 100°C / second to 150°C / second and about 200°C / second to 400°C / second. The temperature can be uniformly heated in a temperature range of about 700°C to about 1,000°C, e.g., about 700°C, about 800°C, about 900°C, about 1,000°C, etc. The temperature can be uniformly heated down to about 800°C. Typical ramp-down (cooling) rates in an RTP chamber are in the range of about 80°C / second to 150°C / second. Some processes performed in an RTP chamber utilize temperature fluctuations across the substrate of less than a few degrees Celsius. An RTP chamber with such a heating control system can anneal a sample in less than 5 seconds, e.g., less than 1 second, and in some embodiments, in milliseconds.

[0016]

[0024] By controlling the temperature of the entire substrate 12 to a temperature precisely defined across the entire substrate 12, the uniformity of the process is improved. One passive means of improving uniformity may include a reflector 28 disposed below the substrate 12. The reflector 28 extends parallel to and above a region larger than the substrate 12. The reflector 28 efficiently reflects the thermal radiation emitted from the substrate 12 back towards the substrate 12, increasing the apparent emissivity of the substrate 12. The distance between the substrate 12 and the reflector 28 may be between about 3 mm and 9 mm, and the aspect ratio of the width to the thickness of the cavity is preferably greater than 20. The upper portion of the reflector 28, which may be made of aluminum and have a highly reflective surface coating or a multilayer dielectric interference mirror, and the back side of the substrate 12 form a reflective cavity for increasing the effective emissivity of the substrate, thereby improving the accuracy of temperature measurement. The reflector 28 may have a more irregular surface or a black or other colored surface so as to closely resemble a blackbody wall. The reflector 28 may be deposited on a second wall 53. The second wall 53 is a water-cooled base 53 made of metal for heat-sinking excess radiation from the substrate, particularly during cooling. Thus, the processing region of the processing chamber 10 has at least two substantially parallel walls, of which the first wall is a window 20 made of a material transparent to radiation, such as quartz, and the second wall 53, which is substantially parallel to the first wall and made of a metal that is not significantly transparent.

[0017]

[0025] One way to improve uniformity involves supporting the support ring 14 on a rotatable cylinder 30 that is magnetically coupled to a rotatable flange 32 disposed outside the processing chamber 10. A motor (not shown) rotates the flange 32 and thus rotates the substrate about its center 34. The center 34 of the substrate is generally also the centerline of the symmetric chamber. Alternatively, the bottom of the rotatable cylinder 30 may be held in place by a magnet disposed within the rotatable flange 32 and may be a magnetic levitation cylinder that rotates by rotating the magnetic field within the rotatable flange 32 from a coil within the rotatable flange 32.

[0018]

[0026] Another way to improve uniformity is to divide lamp 26 into zones generally arranged in a ring around central axis 34. The control circuit varies the voltage supplied to lamps 26 in different zones, thereby adjusting the radial distribution of the radiant energy. The dynamic control of zoned heating is effected by one or more pyrometers 40 connected through one or more light pipes 42 arranged to face the back side of substrate 12 through an aperture in reflector 28 to measure the temperature across the diameter of the rotating substrate 12. The light pipes 42 can be formed of various structures including sapphire, metal, and silica fibers. The computer controller 44 receives the output of the pyrometers 40 and, in response, controls the voltage supplied to the various rings of lamps 26, thereby dynamically controlling the radiant heating intensity and pattern during processing. The pyrometers generally measure the intensity of light in a narrow wavelength bandwidth, for example 40 nm, within a range generally between about 700 nm and about 1000 nm. The controller 44 or other instrumentation converts the light intensity to temperature through the well-known Planck distribution of the spectral distribution of the light intensity radiated from a blackbody maintained at that temperature. However, high temperature measurements are affected by the emissivity of a portion of the substrate 12 being scanned. The emissivity ε can vary from 1 for a blackbody to 0 for a perfect reflector, and thus is an inverse measurement of the reflectivity R = 1 - ε of the back side of the substrate. The back side of the substrate is typically uniform so that a uniform emissivity is expected, but the composition of the back side can vary depending on previous processing. High temperature measurements can be improved by further including a radiometer that optically probes the substrate to measure the emissivity or reflectivity of a portion of the substrate within the relevant wavelength range, and a control algorithm within the controller 44 that includes the measured emissivity.

[0019] Substrate support

[0027] Figure 2 is a schematic cross-sectional side view of a support ring 200 that may be used in place of the support ring 14 in Figure 1 according to one embodiment. The support ring 200 shown in Figure 2 may be placed in a processing chamber, for example, the rapid heat treatment chamber 10 shown in Figure 1, and may extend radially inward along the inner circumferential surface 60 of the processing chamber 10. The support ring may be a continuous ring body that substantially surrounds the outer circumference of the substrate (or, in some embodiments, may be separate ring-shaped bodies).

[0020]

[0028] The support ring 200 includes an annular body having a central opening, as shown in Figure 2. The support ring 200 has an outer ring 202 and an inner ring 204. The outer ring 202 connects to the inner ring 204 through a flat portion 206 that extends radially inward from the inner circumference 203 of the outer ring 202 to the outer circumference 205 of the inner ring 204. The outer ring 202 may be supported by a cylinder 230, such as the rotatable cylinder 30 shown in Figure 1. In a top-heated configuration, the rotatable cylinder 230 may contact the support ring 200 just inside the outer ring 202. That is, the bottom surface of the outer ring 202 is on the opposite side from the top surface 206a of the flat portion 206, preventing light leakage and providing mechanical stability. The support ring 200 further includes an edge lip 208 that extends radially inward from the inner circumference 207 of the inner ring 204 and forms a support ledge that supports the back surface 212b of the substrate 212 near the outer edge of the substrate 212.

[0021]

[0029] The substrate support 210 may be a continuous ring body positioned around the outer circumference of the edge lip 208. A substrate support 210 having a continuous ring body may be advantageous regardless of the heating lamp configuration. This is because the continuous ring body prevents potential light leakage problems by preventing the light from the source radiation in the processing chamber from reaching the pyrometer positioned opposite the source radiation. In addition, the continuous ring body is considered to provide better and more stable support to the substrate 212 because the substrate 212 is rotatably supported by the substrate support 210 during the heating process.

[0022]

[0030] The substrate support 210 can be formed on the upper surface 208a of the edge lip 208 using a laser processing technique or any suitable technique. The substrate support 210 may be any suitable shape, such as a rectangular, rhombus, square, hemisphere, hexagon, triangular projection, or a mixture of projections of different shapes. The substrate support 210 may be any shape that reduces the contact surface with the substrate. For example, the substrate support 210 may have a hemispherical upper surface. A hemispherical upper surface may be advantageous in terms of effective thermal mass reduction because it can further reduce the surface contact area between the edge lip and the substrate by changing the surface contact to continuous or discontinuous line contact.

[0023]

[0031] In this disclosure, “line contact” may refer to a line less than approximately 500 μm, for example, between approximately 5 μm and approximately 200 μm, for example, a line having a radial width of 50 μm. The substrate support 210 supports the substrate with minimal contact area and minimal heat transfer between the edge lip 208 and the substrate 212. For a nominal 12-inch (300 mm) substrate, for a typical 12-inch (300 mm) substrate, the contact area between the edge lip 208 and the substrate is approximately 15 cm². 2 For example, about 5cm 2 For example, about 1 cm 2 From approximately 3cm 2 This may be the case. The width of the lines that physically contact the back surface of the substrate may vary depending on the shape of the substrate support 210. The shape and / or dimensions of the substrate support 210 may also vary, as long as the contact area between the substrate support 210 and the back surface 212b of the substrate 212 is minimized and the substrate 212 is securely supported. In one embodiment, the dimensions of the substrate support 210 may vary over a wide range, for example, from about 0.1 mm to about 10 mm, for example, from about 0.2 mm to about 2 mm, for example, with a width of about 1 mm.

[0024]

[0032] By converting surface contact to continuous line contact, the contact area available for conductive heat transfer between the edge lip 208 of the support ring 200 and the substrate 212 is substantially reduced, thereby eliminating or minimizing excessive temperature gradients within the substrate during heat treatment, even under reduced pressure conditions such as approximately 50 Torr to 200 Torr, for example, approximately 50 Torr, 60 Torr, 70 Torr, 80 Torr, 90 Torr, 100 Torr, 110 Torr, 120 Torr, 130 Torr, 140 Torr, 150 Torr, 160 Torr, 170 Torr, 180 Torr, 190 Torr, and 200 Torr. Reducing the surface contact area between the substrate 212 and the support ring 200 also allows for better management of thermal mass discontinuities caused by the overlap between the substrate 212 and the edge lip 208. Therefore, the distortion of the thermal gradient generated by heat loss around the edges of the substrate is reduced, resulting in an improved overall substrate temperature profile with minimal edge temperature gradient. Reducing the contact area between the edge lip 208 and the substrate 212 further reduces the possibility of particle contamination in the processing chamber. With respect to the upper radiant heating configuration shown in Figure 1, since the substrate is thermally separated from the edge lip 208 through the substrate support 210, radiation from the radiant heat source can be directed to heat the substrate without excessive concern about discontinuities in thermal mass in overlapping regions. Thus, the substrate support of the present invention can be translated into a faster achievable heating gradient or a reduction in spike power conditions.

[0025]

[0033] The substrate support 210 may be made of a material transparent to radiation in the frequency range used for measuring the temperature of the substrate. In one embodiment, the substrate support 210 is made of silicon carbide. Other materials such as silicon carbide alloys, ceramics, or high-temperature materials such as amorphous silica, Al2O2, ZrO2, Si3N4, or similar materials are also conceivable. The substrate support 210 may optionally be coated with silicon dioxide (SiO2) or any other suitable material to prevent Si-Si bonding with the back surface 212b of the substrate 212 at high temperatures, thereby potentially allowing the substrate to adhere to the substrate support. The support ring 200 may be made of a material similar to the substrate to minimize the mismatch in absorptive / reflectance between the substrate and the support ring. In one embodiment, the support ring 200 is made of silicon carbide. The support ring 200 may optionally be coated with a layer of polycrystalline silicon (polysilicon) to make it opaque to radiation in the frequency range used for measuring the temperature of the substrate in the heat treatment chamber. In such cases, the thickness of the polysilicon layer may vary in the range of approximately 20 μm to approximately 50 μm, depending on the thickness of the support ring 200, or, for example, depending on the opacity of the SiC used within the support ring 200.

[0026]

[0034] The processing chamber 10 operates at a pressure of approximately 50 Torr to approximately 250 Torr. The processing chamber 10 includes lamp heating, pyrometer temperature control, or other substrate heating techniques for heating the substrate inside the chamber, for example, a resistance heater or induction heater that rotates around the substrate to provide uniform heating.

[0027] opening

[0035] Referring to Figure 3, the processing chamber 10 may have an orifice 301. The orifice has a diameter of approximately 30 mils to approximately 100 mils, for example, approximately 30 mils, approximately 40 mils, approximately 50 mils, approximately 60 mils, approximately 70 mils, approximately 80 mils, approximately 90 mils, and approximately 100 mils.

[0028]

[0036] The orifice 301 is configured to receive one or more gases 303. One or more gases 303 may include a reactive gas (e.g., H2, O2, etc.) or an inert gas (e.g., N2, He, Ar, etc.) directed toward the substrate 212, as shown in Figure 3. For example, but not limited to, one or more gases 303 may be O2 with an inert gas such as argon or nitrogen. As a further non-limiting example, one or more gases 303 may be H2 with an inert gas such as argon or nitrogen. For example, but not limited to, one or more gases 303 may be a combination of pre-mixed amounts of H2 and O2 and an inert gas such as argon or nitrogen. As a further non-limiting example, one or more gases may be H2 or O2.

[0029]

[0037] The orifice 301 is positioned along the first side 304 of the processing chamber 10 toward a first position in the chamber. The first orifice may be positioned to inject one or more gases 303 substantially perpendicularly from the first side 304 of the processing chamber 10 toward the first position, as shown in Figure 3. The first position includes the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The orifice 301 is positioned along the second side 305 of the processing chamber 10 toward a first position in the chamber. The orifice 301 may be positioned to inject one or more gases 303 substantially perpendicularly from the second side 305 of the processing chamber 10 toward the first position in the chamber, as shown in Figure 3. The orifice 301 may be positioned along the third side 306 of the processing chamber 10 toward the first position in the chamber. The orifice 301 is positioned to inject one or more gases 303 substantially perpendicularly from the third side 306 of the processing chamber 10 toward the first position of the chamber, as shown in Figure 3.

[0030]

[0038] The processing chamber 10 includes a first orifice 401 of a plurality of first orifices, as shown in Figures 4A and 4B. Each first orifice 401 of the plurality of first orifices may be positioned along a first side 304 and a third side 306 of the processing chamber 10, and as shown in Figures 4A and 4B, the first side 304 and the third side 306 of the processing chamber are substantially parallel to each other. The processing chamber also includes a second orifice 402 of a plurality of second orifices, as shown in Figures 4A and 4B. Each second orifice 402 of the plurality of second orifices may be positioned along a first side 304 and a third side 306 of the processing chamber 10.

[0031]

[0039] The multiple first orifices 401 may range from about 1 to about 15 orifices, for example, from about 3 to about 8 orifices, for example, about 1 orifice, about 2 orifices, about 3 orifices, about 4 orifices, about 5 orifices, about 6 orifices, about 7 orifices, about 8 orifices, about 9 orifices, about 10 orifices, about 11 orifices, about 13 orifices, about 14 orifices, about 15 orifices, and so on. The multiple second orifices 402 may range from about 1 to about 15 orifices, for example, from about 3 to about 8 orifices, for example, about 1 orifice, about 2 orifices, about 3 orifices, about 4 orifices, about 5 orifices, about 6 orifices, about 7 orifices, about 8 orifices, about 9 orifices, about 11 orifices, about 12 orifices, about 14 orifices, and about 15 orifices.

[0032]

[0040] The placement and orientation of the orifice facilitates improved mixing of the processing gases on the substrate 212 by providing an appropriate ratio of oxygen and hydrogen mixtures. Furthermore, the placement and orientation of the orifice reduce undesirable upstream mixing of the processing gases, such as mixing that may occur when using a single gas inlet. The improved gas introduction in this disclosure results in improved radical generation and sustainability in relatively high-pressure processes compared to conventional processes, and therefore improves substrate processing. In particular, oxidation of the memory hole sidewalls is improved through improved fit / uniformity.

[0033]

[0041] Each of the multiple second orifices 402 is located between each of the multiple first orifices 401, as shown in Figures 4A and 4B. Each of the multiple first orifices 401 is located between each of the multiple second orifices 402, as shown in Figures 4A and 4B. The improvement in coverage and reaction efficiency between the hydrogen molecular gas and the oxygen molecular gas is achieved by the alternating arrangement of oxygen orifices and hydrogen orifices, where the oxygen orifice is surrounded by the hydrogen orifice. The improvement in reaction efficiency results in more uniform oxidation of the substrate memory holes, as described later.

[0034]

[0042] Multiple first orifices 401 and multiple second orifices 402 can be oriented in a first configuration, as shown in Figure 4A. The first configuration may include four orifices on each of the first side 304 and the third side 306, as shown in Figure 4A, where two of the four orifices are first orifices 401 and two of the four orifices are second orifices 402. The first configuration may include alternating orientations of the first orifices 401 of the multiple first orifices and the second orifices 402 of the multiple second orifices, as shown in Figure 4A. The first configuration may have alternating orientations starting from the first orifices 401, where each of the first orifices 401 and the second orifices 402 includes orientations toward a first position, a second position, and a third position. The first position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The second position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The third position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The first configuration may have alternating orientations starting from a first orifice 401 and a second orifice 402, each of which includes orientations toward a first position at the central opening of the processing chamber, a second position at the edge of the substrate support, and a third position at half the diameter of the processing chamber.

[0035]

[0043] The multiple first orifices 401 and the multiple second orifices 402 may be oriented in a second configuration, as shown in Figure 4B. The second configuration may include four orifices on each of the first side 304 and the third side 306, as shown in Figure 4B, where two of the four orifices are first orifices 401 and two of the four orifices are second orifices 402. The second configuration may have alternating orientations starting from the second orifice 402, where each of the first orifice 401 and the second orifice 402 includes orientations toward a first position, a second position, and a third position. The first position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The second position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The third position may include the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber. The first configuration may have alternating orientations starting from a first orifice 401 and a second orifice 402, each of which includes orientations toward a first position at the central opening of the processing chamber, a second position at the edge of the substrate support, and a third position at half the diameter of the processing chamber.

[0036]

[0044] The multiple first orifices 401 and the multiple second orifices 402 may be oriented in a third configuration, as shown in Figure 5. The third configuration may include six orifices on each of the first side 304 and the third side 306, as shown in Figure 5, where three of the six orifices are first orifices 401 and three of the six orifices are second orifices 402. The third configuration may include alternating orientations of the multiple first orifices (first orifices 401) and the multiple second orifices (second orifices 402), as shown in Figure 5. The third configuration includes six orifices on each side of the first side 304 and the third side 306, where the six orifices are oriented toward a first position, a second position, and a third position. The first position, the second position, and the third position include any of the first position, the second position, and the third position described herein. A third configuration may have alternating orientations starting from a first orifice 401 and a second orifice 402, each of which includes orientations to a first position at the central opening of the processing chamber, a second position at the edge of the substrate support, and a third position at half the radius of the processing chamber.

[0037]

[0045] The processing chamber may include a plenum 601, as shown in Figure 6. The plenum 601 can mix one or more gases 303 to provide a pre-mixed gas. The plenum 601 may mix one or more reactive gases with another reactive gas, for example, H2 and O2, as shown in Figure 6. The plenum 601 may mix one or more reactive gases with inert gases (for example, H2 and N2, H2 and He, H2 and Ar, O2 and N2, O2 and He, O2 and Ar, etc.). The plenum 601 may mix multiple reactive gases with inert gases, for example, H2 and O2 with N2, H2 and O2 with He, and H2 and O2 with Ar. The plenum 601 may mix hydrogen gas with oxygen gas such that hydrogen gas makes up more than 50% of the H2:O2 mixture. For example, the Plenum 601 can mix hydrogen gas and oxygen gas such that hydrogen accounts for between approximately 50% and 80% of the mixture, for example, approximately 50%, 60%, 70%, or 80%.

[0038] circuit board memory holes

[0046] The substrate 212 may include a plurality of memory holes. As used herein, “memory hole” refers to a vertical channel extending to two or more physical levels of the substrate 212. A memory hole may include a vertical trench formed to divide one or more memory hole structures into two or more vertical “NOT AND” (NAND) strings. A memory hole may include a vertical channel extending to layers 32, 48, 64, 96, 112, or more of the substrate 212.

[0039]

[0047] Multiple memory holes have substantially vertical and uniform vertical trenches. Multiple memory holes may contain one or more vertical features (e.g., necking, clogging, warping, striations, tapered profiles, sub-recesses, strain, inclination, twist, etc.). Multiple memory holes have a first vertical trench containing a tapered profile extending to 16 layers, and as shown in Figure 6B, a second vertical trench containing a tapered profile extends beyond the first vertical trench to form a shelf.

[0040]

[0048] Multiple memory holes include an outer layer 901 within a vertical trench. The outer layer 901 may include one or more silica substrates, such as layers of silicon nitride or silicon dioxide. The outer layer 901 may be a silicon nitride layer. The outer layer 901 may be a silicon dioxide layer.

[0041] controller

[0049] The processing chamber 10 includes a controller 307. Each controller may be a local controller associated with a corresponding single orifice or group of corresponding orifices, and may be programmed to control them. For example, but not limited to, each local controller 307 may control a first orifice 401. In a further non-limiting example, a controller 307 may be configured to control a second orifice 402. In one embodiment, the controller 307 includes an application-specific integrated circuit (ASIC). Each controller 307 may be integrated within the processing chamber 10. Each controller 307 may be connected to a PCB separate from the processing chamber 10. The controller 307 includes an electromagnetic shield. To suppress corrosion, it is assumed that the surface of the controller 307 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic sticking prevention films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), silicon oxide (SiO2O3). x It includes, for example, titanium dioxide (TiO2, etc.).

[0042]

[0050] Controller 307 receives commands from the master controller via the PCB, or is the master controller itself. Commands may be in the form of signals addressed to a specific device or orifice, such as a particular orifice in the processing chamber. Each controller 307 is programmed to recognize command signals addressed to a device under its authority and controls the orifice according to the received command. Each controller 306 is programmed to ignore command signals that are not addressed to any orifice within the range of controller 307.

[0043]

[0051] Each orifice can be individually addressed via its corresponding controller 307, thereby allowing control of the operation of each orifice without altering the operating state of other orifices in the processing chamber 10. Each orifice is assigned to one or more groups of orifices, and each group of orifices can be individually addressed via one or more corresponding controllers 307. The operation of each orifice within a defined group can be controlled without altering the operating state of other orifices not within that defined group.

[0044] Oxidation process

[0052] Referring here to Figure 7, the hydroxyl combustion oxidation method 700 includes, in operation 701, introducing a first gas into the processing chamber through a first orifice via a controller command. The first gas may include a reactive gas (e.g., H2, O2, etc.) and / or an inert gas (e.g., N2, He, Ar, etc.). In one embodiment, the first gas includes O2.

[0045]

[0053] The first gas is injected through the first orifice 401. The first orifice 401 directs the first gas toward the substrate 212, with a volumetric flow rate in the range of approximately 5 slm to approximately 40 slm, for example, approximately 5 slm, approximately 6 slm, approximately 7 slm, approximately 8 slm, approximately 9 slm, approximately 10 slm, approximately 11 slm, approximately 12 slm, approximately 13 slm, approximately 14 slm, approximately 15 slm, approximately 16 slm, approximately 17 slm, approximately 18 slm, approximately 19 slm, approximately 20 slm. It can inject in the range of slm, approximately 21slm, approximately 22slm, approximately 23slm, approximately 24slm, approximately 25slm, approximately 26slm, approximately 27slm, approximately 28slm, approximately 29slm, approximately 30slm, approximately 31slm, approximately 32slm, approximately 33slm, approximately 34slm, approximately 35slm, approximately 36slm, approximately 37slm, approximately 38slm, approximately 39slm, and approximately 40slm. The first orifice 401 can inject reactive gas O2 at 5-15slm and inert gas N2 at 30-50slm. The first orifice 401 can inject reactive gas H2 at 15-25slm and inert gas N2 at 15-25slm into a substrate with a diameter of 300mm.

[0046]

[0054] The first gas velocity ranges from approximately 1 m / s to approximately 20 m / s, for example, approximately 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, 10 m / s, 11 m / s, 12 m / s, 13 m / s, 14 m / s, 15 m / s, 16 m / s, 17 m / s, 18 m / s, 19 m / s, 20 m / s, etc. The gas velocity facilitates the reduction of backflow due to a velocity exceeding the flame velocity. The first gas can be injected from the first orifice 401 toward the substrate 212 at a gas velocity sufficient to spread the gas over the wafer or substrate without concern for the flame velocity extending back through the orifice. The first orifice 401 can inject the first gas toward the substrate such that the gas flow velocity exceeds the flame velocity, which is approximately 2 m / s to approximately 10 m / s.

[0047]

[0055] Method 700 includes introducing a second gas into the processing chamber through a plurality of second orifices 702 by a controller. The plurality of second openings 502, by the arrangement of O2 orifices and H2 orifices, allows for improved efficiency of the oxidation reaction of O2 and H2. The second gas may include a reactive gas (e.g., H2, O2, etc.) and / or an inert gas (e.g., N2, He, Ar, etc.).

[0048]

[0056] The second gas is injected through the second orifice 402 by command from the controller. The second orifice 402 can eject the second gas toward the substrate 212 in a range of approximately 5 slm to approximately 40 slm. For example, about 5slm, about 6slm, about 7slm, about 8slm, about 9slm, about 10slm, about 11slm, about 12slm, about 13slm, About 14slm, about 15slm, about 16slm, about 17slm, about 18slm, about 19slm, about 20slm, about 21slm, about 22slm, about 23slm, about 24slm, about 25slm, about 26slm, about 27slm, about 28slm, about 29slm, about 30slm, about 31slm, about 3 Inject at volumetric flow rates of 2 slm, about 33 slm, about 34 slm, about 35 slm, about 36 slm, about 37 slm, about 39 slm, and about 40 slm. The second orifice 402 can be injected with a reactive gas of O2 at 5-15 slm and an inert gas of N2 at 30-50 slm. The second orifice 402 can be injected with a reactive gas of H2 at 15-25 slm and an inert gas of N2 at 15-25 slm into a substrate with a diameter of 300 mm.

[0049]

[0057] The second gas is injected at a gas velocity of approximately 1 m / s to approximately 20 m / s, for example, approximately 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, 10 m / s, 11 m / s, 12 m / s, 13 m / s, 14 m / s, 15 m / s, 16 m / s, 17 m / s, 18 m / s, 19 m / s, 20 m / s, etc. The second gas can be injected from the second orifice 402 toward the substrate 212 at a gas velocity sufficient to spread the gas onto the substrate. The second orifice 402 can inject one or more gases toward the substrate such that the gas flow velocity exceeds a flame velocity of approximately 2 m / s to approximately 10 m / s. The gas velocity facilitates improved processing by exceeding the flame velocity. The second gas is injected from multiple second orifices toward the substrate 212 at a gas velocity sufficient to spread the gas onto the substrate without concern for the flame velocity extending back through the orifices. For example, one or more second gases may be injected toward the substrate so that the flow exceeds a flame velocity of about 2 m / s to about 10 m / s.

[0050]

[0058] The method includes injecting a second gas from a second orifice 402, and in step 703, as shown in Figure 8, a plurality of first orifices 401 inject the first gas, at least partially surrounding the second gas and generating radicals. For example, the second gas may be injected from a second orifice 402 located in the center of a plurality of surrounding first orifices, as shown in Figure 8. At least two first orifices surround the second orifice. For example, but not limited to, as shown in Figure 8, at least four first orifices surround the second orifice. At least four orifices can maximize the extent to which the first gas mixes with the second gas, thereby maximizing the fuel oxidation mixing boundary and ensuring a uniform oxidation outer layer. The second orifice 402 injects the second gas, and the first orifice 401 injects multiple first gases surrounding the second gas, thereby promoting the mixing of the first and second gases and improving reaction efficiency, which promotes uniform oxidation of the outer layer.

[0051]

[0059] Method 700 includes, in step 703 described above, injecting a first gas and a second gas while rotating the substrate 212 on a rotatable cylinder 30 to generate radicals. Method 700 includes injecting the first gas and the second gas while the pressure in the processing chamber is between approximately 50 Torr and approximately 200 Torr. For example, the injection of the first and second gases may occur at reduced pressures, such as when the pressure in the processing chamber is about 50 Torr to about 200 Torr, for example, about 50 Torr to about 200 Torr, for example, about 50 Torr, about 60 Torr, about 70 Torr, about 80 Torr, about 90 Torr, about 100 Torr, about 110 Torr, about 120 Torr, about 130 Torr, about 140 Torr, about 150 Torr, about 160 Torr, about 170 Torr, about 180 Torr, about 190 Torr, and about 200 Torr. Conventionally, pressures such as these quenching radicals can be generated before sufficient processing is performed. However, the gas injection scheme described herein promotes improved radical lifetime so that memory hole processing can occur. The methods and hardware described herein enable the processing of relatively large memory holes while maintaining a fit and / or uniformity of 95% or more (e.g., 99% or more). In addition, since hydroxyl radicals are formed in situ without the use of plasma, relatively high pressures can be used (improving processing uniformity). Otherwise, they would be unusable due to radical quenching that occurs during plasma processing.

[0052]

[0060] The hydroxyl combustion oxidation 700 method involves generating radicals as a function of a first gas and a second gas. Generating radicals may include generating hydroxyl radicals as a function of a reaction between the first gas and the second gas in the presence of heat. Radicals are generated on the substrate in the processing space of the processing chamber, with or without a plasma source. For example, hydroxyl radicals can be formed as a function of a reaction between a first gas of oxygen and nitrogen and a second gas of hydrogen and nitrogen during heating. This allows for greater control of the reactants when forming hydroxyl groups compared to elements that require additional elements, such as plasma. Furthermore, this allows for greater precision in oxidizing the outer layer of the substrate while still reducing flame backflow into the orifice. As a further non-limiting example, hydroxyl radicals can be formed as a function of a reaction between a first gas of oxygen and argon and a second gas of hydrogen and argon during heating. As a result of the reaction between the first gas 303 and the second gas, approximately 5% to 20% of the product becomes hydroxyl radicals, for example, approximately 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, and 20%. When hydrogen gas is present in the H2:O2 mixture at a concentration of more than 50%, hydroxide radicals are generated in the processing chamber 10 by the reaction between the first gas 303 and the second gas. For example, hydroxide radicals can be formed when the hydrogen gas in the H2:O2 mixture is between 50% and 80%.

[0053]

[0061] When radicals are generated, the outer layer 901 (e.g., the sidewall) of the memory hole in the substrate 903 can be oxidized. Oxidizing the outer layer 901 involves oxidizing the silicon nitride layer to a silicon dioxide layer, as shown in Figures 9A-9C. Hydroxyl radicals 902 are generated via a reaction between a first gas and a second gas, as shown in Figure 9A, where the hydroxyl radical flows into the memory hole 903 of the substrate 212. The hydroxyl radicals 902 flow into the memory hole 903 to provide good conformation, as shown in Figure 9B. For example, the hydroxyl radicals may flow into the memory hole at a 200:1AR ratio in a high partial pressure oxidizing agent 100 Torr treatment chamber to provide 99% conformation. As shown in Figure 9C, the hydroxyl radicals 902 react with the silicon nitride outer layer, oxidizing the outer layer 901 to silicon dioxide.

[0054]

[0062] The oxidation of the outer layer 901 may have a thickness of about 10 Å to about 100 Å, for example, 10 Å to about 80 Å, for example, about 10 Å to about 50 Å, for example, about 10 Å to about 30 Å. However, oxidation of other thicknesses is also conceivable. The thickness of the oxidation of the outer layer 901 may be proportional to the amount of hydroxyl radicals produced by the reaction between the first gas and the second gas. The thickness of the oxidation of the outer layer 901 may also be equal to the amount of hydroxyl radicals produced by the reaction between the first gas and the second gas. [Examples]

[0055]

[0063] Example 1

[0064] Substrates were prepared using the processing chamber described herein. The temperature of the processing chamber was 800°C. The pressure was 90 Torr. The partial pressure of H was 21.66 Torr, and the partial pressure of O2 was 9.26 Torr (approximately 10 times that of radical oxidation). Multiple second orifices were injected with 22 slm H2 and 20 slm N2. Multiple first orifices were injected with 9.4 slm O2 and 40 slm N2. The total injection time was 240 seconds. The conformation of the oxidized silicon dioxide was approximately 102%, and the GR was approximately 1.6 A / sqrt. The results are shown in Tables 1 and 2 below. TIFF2026514808000002.tif92170TIFF2026514808000003.tif92170

[0056]

[0065] The above relates to embodiments of the present disclosure, but other and further embodiments can be devised without departing from the basic scope thereof, the scope of which will be determined by the claims.

Claims

1. A processing chamber for hydroxyl-accelerated combustion, wherein the chamber is Substrate support and Multiple alternating orifices, A plurality of first orifices positioned along the first side of the chamber and oriented toward the first position of the chamber, It includes a plurality of second orifices positioned along the first side of the chamber and oriented toward the first position of the chamber, The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least one of the first orifices among the plurality of first orifices, and the plurality of alternating orifices are A controller is provided, and the controller is Heating the processing chamber, Injecting the first gas from the plurality of first orifices, Injecting the second gas from the plurality of second orifices, Generating radicals as a function of heat, the first gas, and the second gas. A chamber configured to perform the following actions.

2. The chamber according to claim 1, wherein the plurality of alternating orifices include orifices ranging from about 1 to about 15 on one side of the chamber.

3. The chamber according to claim 2, wherein the plurality of alternating orifices are approximately 3 to approximately 8 orifices on one side of the chamber.

4. The chamber according to claim 1, wherein the first position includes the central opening of the chamber.

5. The chamber according to claim 1, wherein the first position includes the edge of the substrate support.

6. The chamber according to claim 1, wherein the first position includes half the radius of the processing chamber.

7. The plurality of first orifices are positioned along the first side of the chamber and oriented toward the second position of the chamber, The plurality of second orifices are positioned along the first side of the chamber and oriented toward the second position of the chamber. The chamber according to claim 1, further comprising:

8. The chamber according to claim 7, wherein the second position is selected from the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber.

9. The plurality of first orifices are positioned along the first side of the chamber and oriented toward the third position of the chamber, and The plurality of second orifices are positioned along the first side of the chamber and oriented toward the third position of the chamber. The chamber according to claim 1, further comprising:

10. The chamber according to claim 9, wherein the third position is selected from the central opening of the chamber, the edge of the substrate support, or half the radius of the processing chamber.

11. A method for hydroxyl-accelerated combustion, The controller introduces a first gas into the processing chamber having a substrate support, using at least a first orifice positioned along the first side of the chamber and oriented toward the first position of the chamber. The controller introduces a second gas into the processing chamber using a plurality of second orifices arranged along the second side of the chamber and oriented toward the first position, The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each of the plurality of second orifices is surrounded by at least one of the first orifices, in order to promote the mixing of the first gas and the second gas. While the chamber is being heated, radicals are generated as a function of the first gas and the second gas. A method that includes this.

12. The method according to claim 11, wherein the first position includes the central opening of the chamber.

13. The method according to claim 11, wherein the first position includes the edge of the substrate support.

14. The method according to claim 11, wherein the first position includes half the radius of the processing chamber.

15. The method according to claim 11, wherein the first gas and the second gas are each injected independently at a volumetric flow rate of about 5 slm to about 40 slm.

16. The method according to claim 11, wherein the first gas and the second gas are each injected separately at a pressure exceeding approximately 50 Torr and at a speed of 1 m / s to approximately 20 m / s.

17. The method according to claim 16, wherein the first gas is injected at a speed of 10 m / s at a pressure exceeding approximately 50 Torr.

18. The method according to claim 16, wherein the second gas is injected at a speed of 10 m / s at a pressure exceeding approximately 50 Torr.

19. The method according to claim 11, further comprising heating the processing chamber to a temperature of about 700°C to about 1,000°C.

20. Computer-readable medium, The controller introduces a first gas into the processing chamber having a substrate support, using at least a first orifice positioned along the first side of the chamber and oriented toward the first position of the chamber. The controller introduces a second gas into the processing chamber using a plurality of second orifices positioned along the second side of the chamber and oriented toward the first position, The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each of the plurality of second orifices is surrounded by at least one of the first orifices, in order to promote the mixing of the first gas and the second gas. While the chamber is being heated, radicals are generated as a function of the first gas and the second gas. A computer-readable medium configured to perform the following actions.

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