Semiconductor process equipment and its process chamber

The process chamber's calibration mechanism and bracket system address the issue of shielding member contamination by aligning it with the mounting base, enhancing cleaning and sputtering processes by preventing impurity deposition.

JP2026514908APending Publication Date: 2026-05-13BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Filing Date
2024-06-18
Publication Date
2026-05-13

AI Technical Summary

Technical Problem

The shifting of shielding members in semiconductor process equipment during position adjustment leads to impurities falling on the placement base, contaminating it and affecting the cleaning and sputtering processes.

Method used

A process chamber with a calibration mechanism and bracket system that allows the shielding member to be switched between positions, ensuring precise alignment with the mounting base, thereby preventing impurities from falling and maintaining cleanliness.

Benefits of technology

The solution prevents contamination of the mounting base by aligning the shielding member accurately, reducing particle generation and ensuring effective cleaning and sputtering processes.

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Abstract

This application discloses a process chamber for a semiconductor process apparatus, comprising a cavity, a calibration mechanism, a mounting base, a bracket, and a shielding member provided within the cavity, wherein the calibration mechanism is provided in the cavity, and the shielding member is switchable between a first position and a second position together with the bracket, and when the shielding member is in the first position, the shielding member is positioned alternately with the mounting base, and the calibration mechanism can adjust the shielding member to a preset position on the bracket, and when the shielding member is in a preset position on the bracket and the bracket drives the shielding member to move to the second position, the shielding member is positioned above the mounting base, and the distance between the central axis of the shielding member and the central axis of the mounting base is less than or equal to a first preset distance.
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Description

Technical Field

[0001] This application belongs to the technical field of semiconductor process equipment, and specifically relates to semiconductor process equipment and its process chamber.

Background Art

[0002] The sputtering process is a widely used semiconductor processing process. The sputtering process uses plasma to collide with the surface of the target material, extracts the atoms of the target material by the collision, and finally deposits the atoms on the surface of the wafer to form a thin film. During the process of replacing the target material, impurities are likely to be adsorbed on the surface of the target material. In order to ensure the quality of the thin film, it is necessary to clean the target material before coating. Naturally, in a long-time sputtering process, impurities such as sputtering reactants are likely to accumulate on the surface of the target material. These impurities are also likely to deposit on the thin film and affect the coating quality. From the above, it can be seen that the cleaning process of cleaning the target material is an essential and important step in the sputtering process.

[0003] In the cleaning process, the semiconductor process equipment shields the placement base by a shielding member, thereby preventing impurities from depositing on the placement base and contaminating the placement base. However, the shielding member is likely to shift on the placement base, which may highly affect the shielding effect of the placement base.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention discloses a semiconductor process equipment and its process chamber, and solves the problem that impurities are likely to be generated during the position adjustment of the shielding member of the semiconductor process equipment related to the related technology, and as a result, the impurities fall on the placement base and contaminate the placement base.

Means for Solving the Problems

[0005] To solve the above technical problems, the present invention provides the following technical solutions.

[0006] In a first aspect, the present application discloses a process chamber for a semiconductor process apparatus, the disclosed process chamber comprising a cavity, a calibration mechanism, and a mounting base, a bracket, and a shielding member provided within the cavity, wherein the calibration mechanism is provided in the cavity, and when the shielding member is mounted on the bracket, the shielding member is switchable between a first position and a second position together with the bracket, when the shielding member is in the first position, the shielding member is staggered with the mounting base, the calibration mechanism can adjust the shielding member to a preset position on the bracket, and when the shielding member is in the preset position on the bracket and the bracket drives the shielding member to move to the second position, the shielding member is located above the mounting base, and the distance between the central axis of the shielding member and the central axis of the mounting base is less than or equal to a first preset distance.

[0007] In a second aspect, the present application discloses a semiconductor process apparatus, the disclosed semiconductor process apparatus including the process chamber described in the first aspect. [Effects of the Invention]

[0008] The technical solutions employed in this invention can achieve the following technical effects.

[0009] In the process chamber disclosed in the embodiments of the present application, a bracket is added to drive a shielding member so as to be switchable between a first position and a second position. When the shielding member is in the first position, it is positioned alternately with respect to the mounting base, so that the calibration mechanism can calibrate the shielding member when it is in the first position and further adjust the shielding member to a preset position on the bracket. When the shielding member is in the preset position on the bracket, the bracket can also drive the shielding member to switch to a second position, and when the shielding member is in the preset position on the bracket, it is finally aligned with the mounting base in the second position. This method of calibrating the shielding member to achieve alignment between the shielding member and the mounting base can avoid positional calibration of the shielding member in the second position, can avoid particles generated by friction as the shielding member moves during the calibration process falling onto the mounting base, and ultimately can avoid contamination of the mounting base during the calibration process. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram of the structure of the semiconductor process apparatus disclosed in the embodiment of the present application when the shielding member is in the first position. [Figure 2] This is a schematic diagram of the structure of the semiconductor process apparatus disclosed in the embodiment of the present application when the shielding member is in the second position. [Figure 3] This is a schematic diagram of the structure of the calibration mechanism disclosed in the embodiments of the present application. [Figure 4] This is a schematic diagram of a partial structure of the calibration mechanism disclosed in the embodiments of the present application. [Figure 5] This is a schematic diagram showing an enlarged view of a part of the structure in Figure 4. [Figure 6] This is a schematic diagram showing the coordination of the tapered projection after it lifts the shielding member. [Figure 7] This is a schematic diagram of the structure of the shielding member disclosed in the embodiment of the present application. [Figure 8] This is a schematic diagram of the structure of another shielding member disclosed in the embodiments of the present application. [Figure 9]This is a schematic diagram of the structure of the bracket disclosed in the embodiment of the present application. [Figure 10] This is a cross-sectional view of Figure 9. [Figure 11] This is a schematic diagram of the structure of another bracket disclosed in the embodiments of the present application. [Figure 12] This is a cross-sectional view of Figure 11. [Figure 13] This is a schematic diagram of the fitting structure between the bracket and the shielding member disclosed in the embodiment of the present application. [Figure 14] This is a schematic diagram of the structure of the shielding member at a predetermined position on the bracket after calibration is complete. [Modes for carrying out the invention]

[0011] To further clarify the object, technical solution, and advantages of the present invention, the technical solution will be clearly and completely described below, along with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are not all embodiments of the present invention, but only a selection of embodiments. All other embodiments that a person skilled in the art could obtain without creative effort based on embodiments of the present invention are also included within the scope of protection of the present invention.

[0012] Sputtering is a widely used semiconductor processing process. Sputtering uses plasma to collide with the surface of a target material, extracting atoms from the target material through collision and ultimately depositing them onto the wafer surface to form a thin film. During the process of changing the target material, impurities are easily adsorbed onto the target material's surface. To ensure the quality of the thin film, the target material needs to be cleaned before coating. Naturally, in long sputtering processes, impurities such as sputtering reactants tend to accumulate on the target material's surface. These impurities also easily deposit on the thin film, affecting the coating quality. Therefore, the cleaning process for the target material is an essential and important step in the sputtering process. During the cleaning process, the semiconductor processing equipment shields the mounting base with a shielding member, thereby preventing impurities from accumulating on the mounting base and contaminating it. However, the shielding member is prone to shifting on the mounting base, which is likely to affect the shielding effect of the mounting base. Therefore, in related semiconductor processing equipment, the position of the shielding member is adjusted using ejector pins.

[0013] However, the inventors discovered that when adjusting the position of the shielding member using ejector pins in the process of realizing the present invention, it is necessary to move the shielding member relative to the ejector pins. This movement of the shielding member relative to the ejector pins generates friction, making it easier for impurities attached to the shielding member to fall onto the mounting base, potentially contaminating the mounting base during the position adjustment stage. Clearly, this affects not only the cleaning effect but also the subsequent sputtering process.

[0014] Embodiments of the present application disclose a process chamber of a semiconductor process device. The disclosed process chamber is a place where the semiconductor process device executes a sputtering process and is an important component of the semiconductor process device. Referring to FIGS. 1 to 14, the process chamber disclosed in the embodiments of the present application includes a cavity 10, a calibration mechanism 20, a placement base 30, a bracket 40, and a shielding member 50.

[0015] The cavity 10 is a peripheral structural member of the process chamber. The cavity 10 has a cavity space for accommodating other members of the process chamber. In the embodiments of the present application, the placement base 30, the bracket 40, and the shielding member 50 are all provided within the cavity 10, that is, within the cavity space.

[0016] The calibration mechanism 20 is a mechanism for calibrating the position of the shielding member 50, and the calibration mechanism 20 is provided in the cavity 10. Specifically, the calibration mechanism 20 can be completely located within the cavity space, or a part can be within the cavity space and the rest can be outside the cavity space. Of course, the calibration mechanism 20 can also be provided outside the cavity space and enter the cavity space for calibration when calibration is required. The embodiments of the present application do not limit the specific arrangement form and position of the calibration mechanism 20 in the cavity 10, as long as it can be ensured that the position of the shielding member 50 provided within the cavity space can be calibrated by the calibration mechanism 20.

[0017] The placement base 30 is used to place the wafer. In the sputtering process, the wafer is placed on the placement base 30, and the plasma in the cavity space is made to collide with the target material 61, so that the atoms in the target material 61 are taken out by the collision. The atoms taken out by the collision are deposited on the wafer, thereby realizing film formation by sputtering. The placement base 30 may be an electrostatic chuck or other members capable of placing the wafer. The embodiments of the present application do not limit the specific type of the placement base 30.

[0018] As described in the background art, the shielding member 50 according to the embodiment of the present application is used to cover the mounting surface of the mounting base 30 during the cleaning process, thereby preventing impurities from accumulating on the mounting surface of the mounting base 30 and contaminating it. The shielding member 50 is typically disc-shaped, as shown in Figures 7 and 8. Naturally, in one specific embodiment, the upper end of the shielding member 50 may be a tapered end, that is, a tapered annular surface 55 is formed between the upper surface and the outer circumferential surface of the shielding member 50, as shown in Figure 7. In other embodiments, the upper end of the shielding member 50 may be an end of the same diameter, that is, the angle between the upper surface and the outer circumferential surface of the shielding member 50 is a right angle. The embodiment of the present application does not limit the specific shape of the shielding member 50. Note that the upper end of the shielding member 50 refers to the end of the shielding member 50 that is away from the mounting base 30 when the shielding member 50 is positioned above the mounting base 30.

[0019] Bracket 40 is used to support the shielding member 50 during the calibration process. Naturally, during the sputtering process, the shielding member 50 can be placed on bracket 40, thereby temporarily storing the shielding member 50 when not in use. After calibration, the shielding member 50 can be placed on the mounting base 30 for the cleaning process, and the shielding member 50 and bracket 40 can be separated. In other words, bracket 40 does not always support the shielding member 50. Calibration of the shielding member 50 is only required when bracket 40 is supporting the shielding member 50. In embodiments of the present application, bracket 40 is movably mounted on cavity 10 and drives the shielding member 50 to switch its position. In one specific embodiment, bracket 40 is rotatably mounted on cavity 10, and the bracket 40 rotates to rotate the shielding member 50, thereby enabling the switching of the shielding member 50's position. In another specific embodiment, the bracket 40 is movably mounted on the cavity 10, and the movement of the bracket 40 drives the movement of the shielding member 50, thereby enabling a change in the position of the shielding member 50. Naturally, the embodiments of the present invention do not limit the specific connection relationship between the bracket 40 and the cavity 10.

[0020] In the embodiment of the present invention, when the shielding member 50 is mounted on the bracket 40, the shielding member 50 can be switched between a first position and a second position together with the bracket 40.

[0021] When the shielding member 50 is in the first position, the shielding member 50 is positioned alternately with the mounting base 30, and the calibration mechanism 20 can adjust the shielding member 50 to a preset position on the bracket 40, thereby adjusting the shielding member 50 to an appropriate position in the first position. In this specification, when the shielding member 50 is positioned alternately with the mounting base 30, it means that the projection of the shielding member 50 in a direction perpendicular to the mounting surface of the mounting base 30 does not overlap with the mounting surface of the mounting base 30, and the shielding member 50 does not cover any area of ​​the mounting surface of the mounting base 30; in other words, the projection of the shielding member 50 in a direction perpendicular to the mounting surface of the mounting base 30 is located outside the mounting surface of the mounting base 30.

[0022] When the shielding member 50 is in a preset position on the bracket 40 and the bracket 40 drives the shielding member 50 to move to a second position, the shielding member 50 is located above the mounting base 30, and the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is less than or equal to a first preset distance. In this specification, the calibration mechanism 20 can adjust the position of the shielding member 50 on the bracket 40, so that the shielding member 50 can move to a preset position on the bracket 40, thereby ensuring that when the bracket 40 drives the shielding member 50 to move to a second position, the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is less than or equal to a first preset distance, thereby achieving alignment between the two and ultimately achieving successful calibration.

[0023] Naturally, if the shielding member 50 is in a preset position on the bracket 40 and the bracket 40 drives the shielding member 50 to move to a second position, the projection of the shielding member 50 onto the mounting surface will cover the mounting surface. Specifically, if the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is equal to a first preset distance, the relative positional relationship between the shielding member 50 and the mounting base 30 can just satisfy the shielding requirements during the cleaning process. If the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is less than the first preset distance, the relative positional relationship between the shielding member 50 and the mounting base 30 can more easily satisfy the shielding requirements during the cleaning process. Naturally, if the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is greater than the first preset distance, the shielding member 50 will be misaligned on the mounting base 30, and therefore will not be able to shield the mounting base 30 as required, which will ultimately affect the shielding effect.

[0024] The process chamber disclosed in the embodiments of this application may further include a deposition ring 64. The deposition ring 64 is provided surrounding the mounting surface of the mounting base 30. When the shielding member 50 moves to the second position, the above shielding requirement may be that the shielding member 50 covers the mounting surface and the inner edge of the deposition ring 64. In this specification, the mounting surface refers to the area of ​​the mounting base 30 for supporting the wafer.

[0025] In the selectable solution, the central axis of the shielding member 50 and the central axis of the mounting base 30 may overlap. In this case, the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is 0, and furthermore, it is smaller than the first preset distance. In this case, the degree of alignment between the shielding member 50 and the mounting base 30 is optimal, and the calibration effect is best.

[0026] In another possible solution, the central axis of the shielding member 50 may be parallel to the central axis of the mounting base 30. In this case, the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is not zero, but is smaller than the first preset distance. In this case, although the degree of alignment between the shielding member 50 and the mounting base 30 is slightly inferior, it does not affect the shielding requirements of the cleaning process, and the coordination between the calibration structure and the shielding member 50 is more easily achieved.

[0027] The process chamber disclosed in the embodiment of the present application is an improvement over the structure of a process chamber in the related art, by adding a bracket 40 which drives a shielding member 50 to be switchable between a first position and a second position. When the shielding member 50 is in the first position, it is positioned alternately with the mounting base 30, so the calibration mechanism 20 can perform calibration when the shielding member 50 is in the first position and further adjust the shielding member to a preset position on the bracket 40. When the shielding member 50 is in a preset position on the bracket 40, the bracket 40 can also drive the shielding member 50 to switch to a second position, so that finally the shielding member 50 is aligned with the mounting base 30 in the second position when it is in a preset position on the bracket 40. This method, which involves calibrating the shielding member 50 to achieve alignment between the shielding member 50 and the mounting base 30, avoids the need to perform positional calibration of the shielding member 50 at a second position. It also avoids particles generated by friction during the movement of the shielding member 50 falling onto the mounting base 30, ultimately preventing contamination of the mounting base 30.

[0028] In this specification, when the shielding member 50 is in a preset position on the bracket 40, alignment with the mounting base 30 in the second position means that when the shielding member 50 is in a preset position on the bracket 40 and in the second position, the distance between the central axis of the shielding member 50 and the central axis of the mounting base 30 is less than or equal to the first preset distance, and as a result, the shielding member 50 can cover the mounting surface of the mounting base 30 and the inner ring edge of the deposit ring 64 during the cleaning process. In some embodiments, the first preset distance may be 1 mm. Naturally, in the embodiments of this application, the specific value of the first preset distance is not limited as long as the shielding requirements of the process are met.

[0029] In the embodiments of this invention, there are various types of calibration mechanisms 20. For example, the calibration mechanism 20 may be a robot arm that achieves the purpose of position calibration by moving the shielding member 50 on the bracket 40 by its own movement. Naturally, the robot arm can also drive the shielding member 50 to move on the bracket 40 by grasping or suction so that the position of the shielding member 50 on the bracket 40 becomes a preset position.

[0030] Naturally, the calibration mechanism 20 may be of other types or structures, and is not limited to these in the embodiments of the present application. Referring to Figures 3, 4, and 5, embodiments of the present application disclose a calibration mechanism 20 having a specific structure. The disclosed calibration mechanism 20 may include a calibration rod 21, which is movably mounted on the cavity 10 and is thereby movable relative to the cavity 10 during the calibration operation. A tapered projection 211 may be provided at the upper end of the calibration rod 21. The tapered projection 211 may be conical or polygonal pyramidal in shape. A tapered groove 51 may be provided on the bottom surface of the shielding member 50 facing the bracket 40. The shape of the tapered groove 51 conforms to the shape of the tapered projection 211.

[0031] When the shielding member 50 is in the first position, the calibration rod 21 is positioned below the shielding member 50. The calibration rod 21 may drive a tapered projection 211 through the bracket 40 and extend into the tapered groove 51 to lift the shielding member 50. In the process of lifting the shielding member 50, the gravity of the shielding member 50 drives the inner wall of the tapered groove 51 and the outer wall of the tapered projection 211 to slide, guiding the shielding member 50 to a preset position on the bracket 40. This structure allows the position of the shielding member 50 on the bracket 40 to be calibrated by being lifted by the calibration rod 21 and utilizing the shielding member 50's own gravity. This process has advantages such as being easy to operate and having a simple mechanical structure, as it only requires the vertical control of the calibration rod 21. In some embodiments, the gravity of the shielding member 50 causes the inner wall of the tapered groove 51 and the outer wall of the tapered projection 211 to slide, guiding the distance between the central axis of the tapered projection 211 and the central axis of the tapered groove 51 to be less than a second preset distance, thereby moving the shielding member 50 to a preset position on the bracket 40.

[0032] In this specification, the central axis of the tapered projection 211 may be opposite to the preset position of the bracket 40. In one selectable solution, the inner wall of the tapered groove 51 and the outer wall of the tapered projection 211 may be guided to overlap the central axis of the tapered projection 211 and the central axis of the tapered groove 51 by sliding drive by the gravity of the shielding member 50. In this case, the distance between the central axis of the tapered projection 211 and the central axis of the tapered groove 51 is 0. In another selectable solution, the inner wall of the tapered groove 51 and the outer wall of the tapered projection 211 may be guided to parallel to the central axis of the tapered projection 211 and the central axis of the tapered groove 51 by sliding drive by the gravity of the shielding member 50, such that the distance between them is not 0 but is less than a second preset distance.

[0033] Naturally, the shielding member 50 may shift due to the frequent raising and lowering caused by the ejector pin 62, but the overall shift will not be very large. By designing the size of the tapered projection 211 and the tapered groove 51, the position of the shielding member 50 can be calibrated within the shift range, and after calibration, the shielding member 50 will be in a preset position on the bracket 40. Naturally, the embodiment of this application does not limit the relationship between the first preset distance and the second preset distance.

[0034] As mentioned above, the calibration operation requires the calibration rod 21 to pass through the bracket 40 and lift the shielding member 50. For this reason, the bracket 40 needs to be provided with a bypass structure. The bypass structure can take various shapes. As shown in Figures 9 and 10, in the selectable solution, the bracket 40 is provided with a second bypass hole 41, and the central axis of the second bypass hole 41 may be on the same line as the central axis of the tapered projection 211. The calibration rod 21 may be driven by the tapered projection 211 to pass through the second bypass hole 41 and extend into the tapered groove 51. In this case, the second bypass hole 41 not only serves a bypass function, but by designing the central axis of the second bypass hole 41 to be on the same line as the central axis of the tapered projection 211, the position design of the calibration mechanism 40 on the cavity 10 can be facilitated.

[0035] In a further technical solution, the calibration mechanism 20 disclosed in the embodiment of the present application may further include a pressure sensor 22, the tapered projection 211 may be provided with a housing groove 212, the pressure sensor 22 may be mounted in the housing groove 212, and the pressure sensor 22 may be flush with the opening of the housing groove 212 or lower than the opening of the housing groove 212. A sensor trigger projection 52 may be provided on the bottom wall of the tapered groove 51. When the tapered projection 211 extends into the tapered groove 51, the sensor trigger projection 52 can extend into the housing groove 212 and press against the pressure sensor 22. When the pressure sensor 22 is pressed by the sensor trigger projection 52, it transmits a trigger signal, thereby allowing determination of whether the shielding member 50 has actually been calibrated. This technical solution further adds a pressure sensor 22 and a sensor trigger projection 52, and the cooperation of the two can further verify the calibration when the tapered projection 211 extends into the tapered groove 51. Furthermore, compared to the pressure sensor 22 protruding from the opening of the housing groove 212, the pressure sensor 22 is flush with the opening of the housing groove 212 or lower than the opening of the housing groove 212, which prevents the pressure sensor 22 from being accidentally triggered while the calibration rod 21 is moving.

[0036] The process chamber disclosed in the embodiments of the present application may further include an alarm. The alarm is connected to a pressure sensor 22. If the shielding member 50 is lifted and the pressure sensor 22 does not transmit a pressure signal, it means that the sensor trigger projection 52 is not pressing against the pressure sensor 22, and further indicates that the calibration operation has failed. In this case, the alarm is used to issue a fault alarm, thereby notifying an operator to perform human intervention. Specifically, the alarm may be an optical alarm, an audible alarm, or one that facilitates remote detection by displaying an alarm on the interface of a control computer via software. Alternatively, the alarm may include an optical alarm, an audible alarm, and a display on a computer interface simultaneously. Naturally, the embodiments of the present application are not particularly limited in type to the alarm. Naturally, if the displacement of the shielding member 50 is too large, the pressure sensor 22 will not transmit a pressure signal. In this case as well, the alarm will issue an alarm without receiving a pressure signal.

[0037] To better achieve the trigger, the process chamber disclosed in the embodiment of the present application may have a tapered structure for the sensor trigger projection 52. When the tapered projection 211 extends into the tapered groove 51, the smaller end of the sensor trigger projection 52 extends into the housing groove 212 and presses against the pressure sensor 22. In this case, the sensor trigger projection 52 having a tapered structure can press against the pressure sensor 22 more effectively, thereby achieving a more pronounced trigger effect.

[0038] In one specific embodiment, the sensor trigger projection 52 may have a frustoconical structure (i.e., the end face of the smaller end of the tapered structure is flat). In this case, the sensor trigger projection 52 can not only trigger the pressure sensor 22, but also increase the contact area with the pressure sensor 22, allowing for better support of the shielding member 50.

[0039] In another possible solution, the sensor trigger projection 52 can have a pointed tapered structure. In this case, the smaller end of the sensor trigger projection 52 converges to a pointed tip. The tip of the sensor trigger projection 52 may be located on the central axis of the tapered groove 51. In this case, the sensor trigger projection 52 having a pointed tapered structure can press the pressure sensor 22 better, thereby achieving a more pronounced trigger effect, which is ultimately advantageous for the subsequent calibration and verification of the pressure sensor 22.

[0040] In the embodiments of the present invention, the pressure sensor 22 may be an inelastic structural member. In more feasible embodiments, to better achieve pressure detection, the pressure sensor 22 may be an elastic structural member. In this case, since the pressure sensor 22 has good deformation characteristics, it can deform more clearly upon being pressed by the sensor trigger projection 52, which is advantageous for generating a trigger signal.

[0041] Furthermore, contact between the sensor trigger projection 52 and the pressure sensor 22 can also partially contribute to supporting the shielding member 50. Referring to Figure 6, in a further embodiment of the present invention, the bottom wall of the tapered groove 51 may be a first plane, and the upper surface of the tapered projection 211 may be a second plane. When the tapered projection 211 extends into the tapered groove 51, the sensor trigger projection 52 extends into the housing groove 212, pressing the pressure sensor 22 into a contracted state, and the first plane comes into close contact with the second plane. In this case, when the sensor trigger projection 52 triggers the pressure sensor 22, the calibration rod 21 can support the shielding member 50 not only through contact between the sensor trigger projection 52 and the pressure sensor 22, but also by the close contact between the first plane and the second plane, thereby achieving more stable support for the shielding member 50, and thus avoiding the unstable support that occurs when the heavy shielding member 50 is supported solely by the cooperation of the sensor trigger projection 52 and the pressure sensor 22 during the calibration process.

[0042] In an embodiment in which the sensor trigger projection 52 triggers the pressure sensor 22 to achieve close contact between the first and second planes, the pressure sensor 22 is selected as an elastic structural member with superior elasticity. This is advantageous in contracting the pressure sensor 22 when pressed by the sensor trigger projection 52, causing the shielding member 50 to descend further and making it easier to achieve close contact between the first and second planes.

[0043] In the selectable solutions, the pressure sensor 22, in cooperation with the sensor trigger projection 52, can share 5% to 50% of the gravitational force of the shielding member 50. Naturally, the embodiments of this application are not so restrictive.

[0044] Naturally, in other embodiments, the bottom wall of the tapered groove 51 and the upper surface of the tapered projection 211 do not need to come into contact when the sensor trigger projection 52 presses against the pressure sensor 22.

[0045] The calibration mechanism 20 disclosed in the embodiments of the present application may further include a signal line 28. As shown in Figure 6, the signal line 28 is electrically connected to a pressure sensor 22 and is used to transmit a trigger signal transmitted from the pressure sensor 22. In an optional solution, a through hole is provided in the calibration rod 21, which communicates with a housing groove 212. The end of the signal line 28 passes through the through hole into the housing groove 212 and is electrically connected to the pressure sensor 22 in the housing groove 212. This arrangement avoids the problem of wear due to exposure of the signal line 28, and the calibration rod 21 can also serve to protect the signal line 28. In this specification, the trigger signal may be a pressure signal detected by the pressure sensor 22.

[0046] Based on this, in order to facilitate the raising and lowering operation or driving of the calibration rod 21, in an optional solution, the calibration mechanism 20 disclosed in the embodiment of the present application may further include a first cylindrical telescopic member 23. The first cylindrical telescopic member 23 is located outside the cavity 10. A first avoidance hole 101 is provided in the cavity 10, and the lower end of the calibration rod 21 is located outside the cavity 10, passing through the first avoidance hole 101. The first port of the first cylindrical telescopic member 23 is docked to the first avoidance hole 101 in a sealed manner; that is, the first port of the first cylindrical telescopic member 23 is connected to the cavity 10 in a sealed manner and seals the first avoidance hole 101. The first cylindrical telescopic member 23 is fitted to the outside of the calibration rod 21, and the second port of the first cylindrical telescopic member 23 is fitted to the calibration rod 21 in a sealed manner. The first cylindrical telescopic member 23 can extend and retract in accordance with the raising and lowering of the calibration rod 21. In this case, the lower end of the calibration rod 21 can extend outside the cavity 10, thereby facilitating the operation of the calibration rod 21 outside the cavity 10. The first cylindrical expandable member 23 can also be configured so that the lower end of the calibration rod 21 extends outside the cavity 10, taking into consideration sealing and isolating the internal environment of the cavity 10 from the external environment, thereby preventing the external environment from affecting the internal environment of the cavity 10.

[0047] In embodiments of the present invention, the raising and lowering of the calibration rod 21 can be achieved by manual control, for example, by an operator manually pushing or pulling the calibration rod 21. Naturally, the calibration rod 21 can also be raised and lowered by driving a drive mechanism, thereby improving the level of automation of the process chamber. Based on this, in an optional solution, the calibration mechanism 20 disclosed in embodiments of the present invention may further include a first drive mechanism 24 located outside the cavity 10 and connected to the lower end of the calibration rod 21. The first drive mechanism 24 is used to drive the calibration rod 21 up and down to lift or separate the shielding member 50. Since the lower end of the calibration rod 21 may be located outside the cavity 10, it is easy to position the first drive mechanism 24 connected to it outside the cavity 10, and by driving the calibration rod 21 outside the cavity 10, the first drive mechanism 24 can be avoided from being affected by the environment inside the cavity 10.

[0048] To facilitate installation, the calibration mechanism 20 disclosed in the embodiments of the present application may further include a mounting holder 27. The first drive mechanism 24 may be mounted on the mounting holder 27. The mounting holder 27 can be fixed to the outside of the cavity 10, thereby allowing the first drive mechanism 24 to be indirectly mounted to the cavity 10, and ultimately enabling at least partial mounting of the calibration mechanism 20.

[0049] As described above, the first port of the first cylindrical expandable member 23 is docked in a sealed manner in the first avoidance hole 101, the first cylindrical expandable member 23 is fitted to the outside of the calibration rod 21, and the second port of the first cylindrical expandable member 23 is fitted in a sealed manner in the calibration rod 21. To facilitate connection, in an optional embodiment, the calibration mechanism 20 disclosed in the embodiment of the present application may further include a first flange 25 and a second flange 26, the second flange 26 being fitted in a sealed manner on the calibration rod 21, and the outer edge of the upper surface of the second flange 26 being sealed and connected to the second port of the first cylindrical expandable member 23. The first flange 25 is fitted to the outside of the calibration rod 21 and is sealed and connected to the first port of the first cylindrical expandable member 23. The first flange 25 is fixed in the first avoidance hole 101 and is fitted in a sealed manner in the first avoidance hole 101. This structure makes it easy to connect the components of the calibration mechanism 20, and to connect the calibration mechanism 20 to the cavity 10.

[0050] In the embodiments of this application, the first drive mechanism 24 can be a pneumatic telescopic member, a hydraulic telescopic member, or a screw drive mechanism. In the embodiments of this application, the specific form of the first drive mechanism 24 is not limited. When the first drive mechanism 24 is operated, its movable part is connected to the lower end of the calibration rod 21, thereby enabling the calibration rod 21 to be driven up and down.

[0051] To further enhance the level of automation of the process chamber, in optional solutions, the process chamber disclosed in the embodiments of the present application may further include a position detection device and a controller. The position detection device is used to detect the position of the shielding member 50. A first controller is connected to the first drive mechanism 24 and the position detection member, respectively. The controller is used to control the opening of the first drive mechanism 24 when the shielding member 50 is in a first position. In this case, the detection by the position detection device that the shielding member 50 is in a first position means that the position of the shielding member 50 on the bracket 40 needs to be calibrated or has been calibrated. In this case, the controller can be controlled to raise or lower the calibration rod 21. In embodiments of the present application, the position detection member may be a laser detection device or a visual detection device. Embodiments of the present application do not limit the specific type of position detection member. The controller may be a control chip or a programmable logic controller (PLC) control circuit, but naturally, embodiments of the present application do not limit the specific type of controller.

[0052] In selectable embodiments, the lifting stroke of the first drive mechanism 24 can be designed as a preset stroke. In the driving process of the first drive mechanism 24, the first drive mechanism 24 drives the calibration rod 21 to rise to a preset stroke, thereby achieving the objective of extending to the tapered groove 51 and lifting the shielding member 50. Naturally, in other embodiments, the process chamber can control the starting and stopping of the first drive mechanism 24 by using a detection device to detect whether or not the shielding member 50 is lifted. Embodiments of the present application do not limit the start and stop control modes of the first drive mechanism 24.

[0053] As described above, when the shielding member 50 is mounted on the bracket 40, the bracket 40 can drive the shielding member 50 to switch between a first position and a second position. To prevent the shielding member 50 from sliding off the bracket 40 during the position switching process, an optional solution is provided in which a limiting projection 42 is provided on the surface of the bracket 40 facing the shielding member 50, and a first limiting groove 53 is provided on the bottom surface of the shielding member 50 facing the bracket 40. The limiting projection 42 extends into the first limiting groove 53 and engages with the first limiting groove 53 in a plane parallel to the mounting surface of the mounting base 30. In this case, when the shielding member 50 moves laterally, the limiting projection 42 and the first limiting groove 53 restrict its movement, preventing the shielding member 50 from moving further laterally and preventing it from moving excessively laterally and sliding off.

[0054] In the embodiments of the present invention, the limiting projection 42 may be an annular projection, and as shown in Figures 10, 11, 12, or 13, the annular projection extends into the first limiting groove 53, thereby enabling limiting in multiple directions within a plane parallel to the mounting surface of the mounting base 30. Naturally, there may be one limiting projection 42 or multiple, for example, three, as shown in Figure 9. As shown in Figures 8 and 9, when there are multiple limiting projections 42, the multiple limiting projections 42 are arranged in a circular shape, and since the multiple limiting projections 42 arranged in a circular shape extend into the first limiting groove 53, it is possible to enable limiting in multiple directions within a plane parallel to the mounting surface of the mounting base 30.

[0055] In other embodiments, the process chamber disclosed in the embodiments of the present application may further include ejector pins 62, and a second limiting groove 54 may be provided on the bottom surface of the shielding member 50 facing the bracket 40, with a first limiting groove 53 opening in the bottom wall of the second limiting groove 54. The second limiting groove 54 is used for the ejector pins 62 to extend and to restrict engagement with the ejector pins 62 in a plane parallel to the mounting surface. When the ejector pins 62 support the shielding member 50 (as described later), the ejector pins 62 can restrict engagement with the second limiting groove 54 in a plane parallel to the mounting surface, thereby preventing the shielding member 50 from falling off the ejector pins 62. Specifically, there may be multiple ejector pins 62, for example, three. Multiple ejector pins 62 are spaced apart to achieve relatively balanced support.

[0056] In embodiments of the present application, the process chamber disclosed herein may further include a second drive mechanism 63 provided in the cavity 10, the second drive mechanism 63 being connected to a bracket 40 and driving the bracket 40 to move, the bracket 40 driving the shielding member 50 to switch between a first position and a second position. Specifically, the second drive mechanism 63 may be partially located outside the cavity 10 and partially located inside the cavity 10. The portion of the second drive mechanism 63 located inside the cavity 10 is connected to the bracket 40 and drives the bracket 40 to move. There are many types of second drive mechanisms 63, and the present application does not limit the types or specific structures of the second drive mechanism 63.

[0057] In a more specific embodiment, the power output shaft of the second drive mechanism 63 may be configured to rotate within a first preset angular range. When the power output shaft of the second drive mechanism 63 rotates to one end of the first preset angular range, the second drive mechanism 63 drives the shielding member 50 to move to the first position. When the power output shaft of the second drive mechanism 63 rotates to the other end of the first preset angular range, the first drive motor drives the shielding member 50 to move to the second position.

[0058] In an optional solution, the second drive mechanism 63 may be connected to the bracket 40 via a transmission rod 631 that penetrates from the outside of the cavity 10 into the cavity 10. Specifically, the second drive mechanism 63 is located on the outside of the cavity 10. The cavity 10 is provided with a third clearance hole. The lower end of the transmission rod 631 is located on the outside of the cavity 10 and connected to the second drive mechanism 63. The upper end of the transmission rod 631 is located inside the cavity 10, passing through the third clearance hole, and connected to the bracket 40. The second drive mechanism 63 can rotationally drive the transmission rod 631, thereby driving the transmission rod 631 to move the bracket 40. In this case, the cavity 10 is provided with a third clearance hole through which the transmission rod 631 passes. During a particular operation, the second drive mechanism 63 rotationally drives the transmission rod 631. The rotation of the transmission rod 631 rotates the bracket 40, which in turn rotates the shielding member 50, thereby enabling a switch in the position of the shielding member 50.

[0059] Naturally, in order to prevent the environment inside the cavity 10 from being affected, a seal structure may be provided between the hole wall of the third avoidance hole and the transmission rod 631. The seal structure may be a dynamic seal structure or a static seal structure, and the embodiments of this application do not limit the specific type of seal structure.

[0060] In the selectable solution, the cavity 10 disclosed in the embodiment of the present application has a first space 102 and a second space 103, the first space 102 being located laterally to the second space 103 and communicating with the second space 103. The mounting base 30 is provided in the second space 103, the calibration mechanism 20 is provided in the cavity 10 opposite to the first space 102 (if the calibration mechanism 20 includes a calibration rod 21, the calibration rod 21 is provided to be movable in the cavity 10 opposite to the first space 102), and the shielding member 50 can move or rotate in a plane parallel to the mounting surface of the mounting base 30. When the shielding member 50 is in the first position, the shielding member 50 moves or rotates in the first space 102. When the shielding member 50 is in the second position, the shielding member 50 moves or rotates in the second space 103.

[0061] Furthermore, the length of the first space 102 in the first direction is shorter than the length of the second space 103 in the first direction. In this specification, the first direction is the direction perpendicular to the mounting surface of the mounting base 30. Since the space in which the mounting base 30 is placed is subsequently subjected to sputtering and cleaning processes, the first space 102 is merely the space in which the bracket 40 holding the shielding member 50 resides, and therefore it is not necessary to set the first space 102 to be very large in the direction perpendicular to the mounting surface. This method, which allows the length dimensions of the first space 102 and the second space 103 in the first direction to be specifically designed according to the needs of both, is undoubtedly advantageous for the target design of the cavity 10 and is advantageous for miniaturizing the process chamber because it does not require designing an excessively large size.

[0062] The process chamber disclosed in the embodiments of the present application may further include a target material 61, a magnetron 71, and a third drive mechanism 72. The cavity 10 may be provided with a second space 103 and a third space 104 separated by the target material 61. The third space 104 is located above the second space 103. The third drive mechanism 72 is provided in the cavity 10 and connected to the magnetron 71 located in the third space 104. The third drive mechanism 72 is used to rotate the magnetron 71 within the third space 104. The plane on which the magnetron 71 rotates is parallel to the mounting surface of the mounting base 30. During the sputtering process, the third drive mechanism 72 rotates the magnetron 71 within the third space 104, thereby dynamically adjusting the plasma density in the second space 103 via the magnetic field, which results in a more uniform plasma density in the second space 103 and ultimately contributes to improved sputtering quality.

[0063] Similarly, the third drive mechanism 72 may be located outside the cavity 10 so as not to be affected by the environment inside the cavity 10, and the third drive mechanism 72 may be connected to the magnetron 71 via a connector that passes through the cavity 10.

[0064] In the process chambers disclosed in the embodiments of the present application, the structure of the cavity 10 is diverse, and the embodiments of the present application do not limit the specific structure of the cavity 10. Referring again to Figures 1 and 2. In an optional solution, the cavity 10 may include an insulating cover 11, an insulating ring 12, and a cavity body 14. The cavity body 14 constitutes the main part of the cavity 10, the target material 61 overlaps and covers the upper opening of the cavity body 14, and the target material 61 and the cavity body 14 can form a space enclosing at least a second space 103 (in some embodiments, the space also includes a first space 102), the insulating cover 11 covers the target material 61 and together with the target material 61 enclosing a third space 104. During the sputtering process, the target material 61 is electrically connected to a power supply 15, thereby ensuring the electrical connection of the target material 61. The insulating ring 12 insulates and separates the cavity body 14 from the target material 61, preventing the cavity body 14 from becoming charged. Naturally, since the target material 61 is installed on top of each other, there is no need to provide a separate dedicated installation structure for the target material 61, and the structure of the cavity 10 is simplified.

[0065] Furthermore, the insulating cover 11 and the target material 61 surround the third space 104, and the magnetron 71 is located within the third space 104. The insulating cover 11 is made of insulating material and can prevent the radiation of a magnetic field in unwanted directions from the third space 104. Specifically, since the opening of the insulating cover 11 faces the second space 103, a magnetic field is particularly applied to the second space 103 through the opening of the insulating cover 11, which ultimately benefits the process quality of the sputtering process carried out in the second space 103.

[0066] Naturally, the cavity 10 disclosed in the embodiment of the present application may further include an adapter ring 13 provided between the cavity body 14 and the insulating ring 12, and constituting a part of the cavity 10. The adapter ring 13 has an adapter function and can provide a mounting position for the isolation ring 66, which will be described later, thereby enabling the isolation ring 66 to be mounted inside the cavity 10.

[0067] The process chamber disclosed in the embodiments of the present application may further include ejector pins 62, a deposit ring 64, a shielding ring 65, an isolation ring 66, an ejector pin holder 67, a fourth drive mechanism 68, and a gas passage system 73.

[0068] The isolation ring 66 is provided within the cavity 10. Specifically, a portion of the isolation ring 66 is provided in close contact with the inner wall of the cavity 10, and another portion of the isolation ring 66 may extend above the mounting base 30. The shielding ring 65 is provided with an annular groove 651, and the other portion of the isolation ring 66 is formed surrounding the annular projection 661 and extends into the annular groove 651 of the shielding ring 65, so that the shielding ring 65 can overlap the annular projection 661 by gravity without being supported by the mounting base 30.

[0069] The deposition ring 64 is provided on the edge of the mounting base 30 and faces the shielding ring 65. The isolation ring 66, shielding ring 65, and deposition ring 64 are all provided within the second space 103 of the cavity 10. Specifically, the first space 102 is the space in which the bracket 40 holds and stays with the shielding member 50, and the second space 103 is the space for performing the cleaning process and the sputtering process.

[0070] The ejector pin 62 and the ejector pin holder 67 are both located within the second space 103, with the ejector pin 62 attached to the ejector pin holder 67. The ejector pin holder 67 is connected to a fourth drive mechanism 68, which is located in the cavity 10. The fourth drive mechanism 68 achieves the objective of indirectly driving the ejector pin 62 up and down by driving the ejector pin holder 67 to move. During certain operations, the ejector pin 62 is inserted into the mounting base 30 and is capable of moving up and down in a direction perpendicular to the mounting surface of the mounting base 30.

[0071] In the embodiments of the present application, the bracket 40 is provided with a bypass notch 43, which serves to avoid the ejector pin 62. The process chamber disclosed in the embodiments of the present application may further include a deposition ring 64. The deposition ring 64 is fixed to the edge of the mounting base 30 and is provided surrounding the mounting surface of the mounting base 30.

[0072] When the cleaning process is about to begin, the shielding member 50 is placed on the bracket 40 and driven by the bracket 40 to move into the first space 102 and hold in the first position. Next, the calibration mechanism 20 calibrates the shielding member 50 so that it is adjusted to a preset position on the bracket 40. The bracket 40 then drives the shielding member 50 to move into the second space 103 so that it is in the second position. When the bracket 40 holding the calibrated shielding member 50 is in the second space 103 and the shielding member 50 is in the second position, the fourth drive mechanism 68 drives the ejector pin holder 67 to raise the ejector pin 62. The ejector pin 62 passes through the mounting base 30 and gradually approaches the bracket 40, passing through the avoidance notch 43 of the bracket 40 to support the shielding member 50. When the ejector pin 62 supports the shielding member 50, the bracket 40 can be driven by the second drive mechanism 63 to move and remain in the first space 102. Naturally, the presence of the avoidance notch 43 prevents interference with the ejector pin 62 in the raised position when the bracket 40 is driven by the second drive mechanism 63 to move into the first space 102. Next, the mounting base 30 is driven by the fifth drive mechanism connected to it to rise, lifting the shielding member 50, and the mounting base 30 lifts the shielding ring 65 together with the deposit ring 64, so that the annular projection 661 of the isolation ring 66 does not come out of the annular groove 651. At this point, the shielding member 50 is in the process position for the cleaning process. Naturally, at this point, the shielding member 50 is supported by the mounting base 30 and covers the mounting surface of the mounting base 30, thus achieving the purpose of protecting the mounting surface and preparing it for the subsequent cleaning process.

[0073] Furthermore, the projection of the shielding ring 65 in a direction perpendicular to the mounting surface of the mounting base 30 can cover the outer edge of the deposition ring 64. The mounting base 30 drives the shielding member 50 and the deposition ring 64 and continues to rise until the shielding ring 65 is lifted. In this case, the cleaning space is surrounded by the target material 61, isolation ring 66, shielding ring 65, deposition ring 64 and shielding member 50, and the preparation before the cleaning process is complete. During the cleaning process, the gas passage system 73 introduces a cleaning gas (e.g., argon or nitrogen) into the cleaning space. The cleaning gas flows into the cleaning space and forms a plasma, which collides with the target material 61 and removes impurities on the target material 61 by collision, ultimately achieving the objective of cleaning the target material 61. Naturally, the impurities that become atoms due to the collisions are deposited on the shielding member 50, isolation ring 66, shielding ring 65 and deposition ring 64. The shielding member 50 covers the mounting base 30, protecting the mounting base 30 and preventing impurities from accumulating on it.

[0074] Once the cleaning process is complete, a fifth drive mechanism (not shown) drives the mounting base 30 downward, and the shielding member 50 also descends with the mounting base 30. As the mounting base 30 continues to descend, the ejector pin 62 protrudes again from one side of the mounting surface of the mounting base 30, and supports the shielding member 50 again. As the mounting base 30 continues to descend, it separates from the shielding member 50. Next, the second drive mechanism 63 drives the bracket 40 from the first space 102 to the second space 103, positioning it below the shielding member 50 (at this point, the mounting base 30 is positioned below the bracket 40). Then, the fourth drive mechanism 68 drives the ejector pin holder 67 to lower the ejector pin 62, thereby causing the shielding member 50 to fall onto the bracket 40. As the ejector pin 62 continues to descend, the shielding member 50 separates from the ejector pin 62, and then the second drive mechanism 63 drives the bracket 40 to move the shielding member 50 from the second space 103 to the first space 102, thereby returning the shielding member 50 to the first position, and further calibrated again by the calibration mechanism 20. The calibrated shielding member 50 can then be prepared for the next cleaning process.

[0075] After the cleaning process is complete, the robotic arm of the semiconductor process apparatus can transport the wafer onto the ejector pins 62 so that the wafer is supported by the ejector pins 62. Next, the fifth drive mechanism drives the mounting base 30 upward, causing the mounting base 30 to lift the wafer and separate it from the ejector pins 62. When the mounting base 30 rises to the contact position with the deposition ring 64 and the shielding ring 65, the gas passage system 73 can be injected with a process gas (e.g., argon or nitrogen). The process gas enters the second space 103, is ionized and turned into plasma. This plasma collides with the cleaned target material 61, extracting atoms from the target material 61 by collision and depositing them onto the wafer, thereby realizing the sputtering process.

[0076] As described above, a second limiting groove 54 may be provided on the bottom surface of the shielding member 50 according to the embodiment of the present invention, and this second limiting groove 54 is used for restrictive fitting with the ejector pin 62. Specifically, when the ejector pin 62 supports the shielding member 50, the ejector pin 62 extends into the second limiting groove 54 and restrictively fits with the side wall of the second limiting groove 54, thereby avoiding the risk of the shielding member 50 sliding sideways and falling when supported by the ejector pin 62. Naturally, the first limiting groove 53 is not required when providing the second limiting groove 54. Naturally, if the shielding member 50 already has a first limiting groove 53, the first limiting groove 53 can be opened in the bottom wall of the second limiting groove 54 and the first limiting groove 53 can be positioned in alignment with the second limiting groove 54.

[0077] Based on the process chamber disclosed in the embodiments of the present application, the embodiments of the present application disclose a semiconductor process apparatus, the disclosed semiconductor process apparatus includes the process chamber described in the embodiments above.

[0078] The above embodiments of the present invention focus on the differences between each embodiment. It is possible to combine the different technical features of each embodiment to form more embodiments, provided that they do not contradict each other. For the sake of brevity, redundant explanations are omitted here.

[0079] While embodiments of the present invention have been described above in conjunction with the drawings, the present invention is not limited to the above-described specific embodiments. The above-described specific embodiments are merely illustrative and not limiting. Based on the teachings of this application, a person skilled in the art can take various forms without departing from the spirit and claims of this application. All of these are within the scope of protection of the present invention. [Explanation of Symbols]

[0080] 10 Cavity 101 1st avoidance hole 102 1st space 103 2nd space 104 Third space 11. Insulating cover 12 Insulating rings 13 Adapter Rings 14 Cavity Body 15 Power supply 20 Calibration mechanism 21 Calibration Rod 211 Tapered projection 212 Retaining groove 22 Pressure Sensor 23. First cylindrical expandable member 24 First drive mechanism 25 First flange 26. Second flange 27 Mounting holder 28 signal lines 30 Mounting base 40 brackets 41 2nd avoidance hole 42 Restrictive projection 43 Avoidance Notch 50 Shielding member 51 Tapered groove 52 Sensor trigger protrusion 53 First limiting groove 54 Second limiting groove 55 Tapered annular surface 61 Target material 62 ejector pins 63 Second drive mechanism 631 Transmission Rod 64 Sedimentation rings 65 Shielding Ring 651 Ring groove 66 Isolation rings 661 Annular protrusion 67 Ejector pin holder 68. Fourth drive mechanism 71 Magnetron 72 Third drive mechanism 73 Gas passage system

Claims

1. A process chamber for a semiconductor process apparatus, comprising a cavity, a calibration mechanism, a mounting base, a bracket, and a shielding member provided within the cavity, wherein the calibration mechanism is provided in the cavity, and when the shielding member is mounted on the bracket, the shielding member is switchable between a first position and a second position together with the bracket. When the shielding member is in the first position, the shielding member is arranged alternately with the mounting base described above, and the calibration mechanism can adjust the shielding member to a preset position on the bracket. A process chamber characterized in that, when the shielding member is in the preset position on the bracket, and the bracket drives the shielding member to move to the second position, the shielding member is located above the mounting base described above, and the distance between the central axis of the shielding member and the central axis of the mounting base described above is less than or equal to the first preset distance.

2. The calibration mechanism includes a calibration rod movably mounted on the cavity, the upper end of the calibration rod includes a tapered projection, and the bottom surface of the shielding member facing the bracket is provided with a tapered groove. When the shielding member is in the first position, the calibration rod is located below the shielding member, and the calibration rod can drive the tapered projection to penetrate the bracket and extend into the tapered groove, thereby lifting the shielding member. The process chamber according to claim 1, characterized in that, in the process of lifting the shielding member, the inner wall of the tapered groove and the outer wall of the tapered projection are driven to slide by the gravity of the shielding member, and the shielding member is guided to move to the predetermined position on the bracket.

3. The calibration mechanism further includes a pressure sensor, the tapered projection is provided with a housing groove, the pressure sensor is mounted in the housing groove, the pressure sensor is flush with the opening of the housing groove or lower than the opening of the housing groove, and a sensor trigger projection is provided on the bottom wall of the tapered groove. The process chamber according to claim 2, characterized in that when the tapered projection extends into the tapered groove, the sensor trigger projection extends into the housing groove and presses against the pressure sensor.

4. The process chamber according to claim 3, further comprising an alarm, the alarm being connected to the pressure sensor, and used to issue a fault alarm when the shielding member is raised and the pressure sensor fails to transmit a pressure signal.

5. The process chamber according to claim 3, characterized in that the sensor trigger projection has a tapered structure, and when the tapered projection extends into the tapered groove, the smaller end of the sensor trigger projection extends into the housing groove and presses against the pressure sensor.

6. The process chamber according to claim 3, wherein the pressure sensor is an elastic structural member, the bottom wall of the tapered groove is a first plane, the upper surface of the tapered projection is a second plane, and when the tapered projection extends into the tapered groove, the sensor trigger projection extends into the housing groove and presses the pressure sensor into a contracted state, and the first plane comes into close contact with the second plane.

7. The calibration mechanism further includes a first cylindrical expandable member located outside the cavity, the cavity having a first avoidance hole, the lower end of the calibration rod passing through the first avoidance hole and located outside the cavity, the first port of the first cylindrical expandable member being sealed and docked with the first avoidance hole, the first cylindrical expandable member being fitted onto the outside of the calibration rod, the second port of the first cylindrical expandable member being sealed and fitted with the calibration rod, and the first cylindrical expandable member being expandable and contractible in conjunction with the vertical movement of the calibration rod, as described in claim 2.

8. The process chamber according to claim 7, wherein the calibration mechanism further includes a first drive mechanism, the first drive mechanism located outside the cavity and connected to the lower end of the calibration rod, and used to drive the calibration rod up and down to lift or separate the shielding member.

9. The process chamber according to claim 2, characterized in that the bracket is provided with a second avoidance hole, and the calibration rod can be driven to penetrate the second avoidance hole and extend into the tapered groove by driving the tapered projection.

10. The process chamber according to claim 1, characterized in that a limiting projection is provided on the surface of the bracket facing the shielding member, a first limiting groove is provided on the bottom surface of the shielding member facing the bracket, the limiting projection extends into the first limiting groove and engages with the first limiting groove in a plane parallel to the mounting surface of the mounting base described above.

11. The process chamber according to claim 10, characterized in that the limiting protrusion is an annular protrusion, or there are multiple limiting protrusions and they are arranged in a circular shape.

12. The process chamber according to claim 10, further comprising an ejector pin, wherein a second limiting groove is provided on the bottom surface of the shielding member facing the bracket, the first limiting groove is opened in the bottom wall of the second limiting groove, the second limiting groove is used for the ejector pin to extend and restrictively engages with the ejector pin in a plane parallel to the aforementioned mounting surface.

13. A semiconductor process apparatus characterized by including a process chamber according to any one of claims 1 to 12.