Manufacturing and transfer of current collector-independent alkali metal anode stacks

Abstract

A method and apparatus for forming a lithium metal anode device stack are provided. The lithium metal is manufactured using a plastic-containing substrate on which a release layer is formed. A solid electrolyte is deposited on the release layer using a non-vacuum coating technique. The remainder of the device stack is deposited in a vacuum chamber and then laminated onto a current collector to form the anode stack.

Description

[Technical Field]

[0001] This disclosure relates, in general terms, to lithium metal-containing devices and methods for manufacturing lithium metal-containing devices. More specifically, this disclosure relates to lithium metal anode device stacks for energy storage devices and methods for manufacturing the same. [Background technology]

[0002] Rechargeable electrochemical storage systems are becoming increasingly essential in many aspects of daily life. High-capacity electrochemical energy storage devices, such as lithium-ion (Li-ion) batteries, are being used in a growing number of applications, including portable electronics, medicine, transportation, grid-connected large-scale energy storage, renewable energy storage, and uninterruptible power supplies (UPS). Conventional lead-acid / sulfate batteries often lack sufficient capacitance and, in many cases, have inadequate cycle performance for these growing applications. However, lithium-ion batteries are considered the most promising.

[0003] Lithium is an alkali metal. Like its heavy element homologs in Group 1, lithium is characterized by its strong reactivity with a variety of substances. It reacts violently with water, alcohols, and other substances containing protic hydrogen, often resulting in ignition. Lithium is unstable in air and reacts with oxygen, nitrogen, and carbon dioxide. While lithium is typically handled in an inert gas atmosphere (such as a noble gas like argon), its strong reactivity necessitates that other processing operations also be carried out under an inert gas atmosphere. As a result, lithium presents several challenges regarding processing, storage, and transport.

[0004] Protective surface treatments have been developed for lithium metals. One method of protective surface treatment for lithium metals involves coating the lithium metal with a wax layer, such as polyethylene wax. However, usually a large amount of coating agent is applied, which interferes with subsequent processing of the lithium metal layer.

[0005] Therefore, there is a need for methods and systems for the deposition and processing of lithium metal used in energy storage devices. [Overview of the project]

[0006] This disclosure generally relates to lithium metal-containing devices and methods for manufacturing lithium metal-containing devices. More specifically, this disclosure relates to lithium metal anode device stacks for energy storage devices and methods for manufacturing the same.

[0007] In one embodiment, a method for fabricating an energy storage device is provided. This method includes forming an electrolyte-containing layer on one surface of a release layer disposed over one surface of a flexible support layer. This method further includes forming one or more interface layers on one surface of the solid electrolyte-containing layer. This method further includes evaporating an alkali metal onto the one or more interface layers. This method further includes transferring the release layer, the electrolyte-containing layer, one or more interface layers, and the alkali metal to a substrate to form an anode film stack.

[0008] The implementation configuration may include one or more of the following: The flexible support layer comprises a material selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), metallized plastics, paper, or combinations thereof. The solid electrolyte-containing layer is deposited on one surface of the release layer using non-vacuum coating. One or more interface layers and alkali metals are deposited in a vacuum environment. This method further includes transferring the flexible support layer, release layer, and solid electrolyte-containing layer to a vacuum environment before forming one or more interface layers. One or more interface layers comprise an interface dielectric material. The interface dielectric material is selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or combinations thereof. RE may be a trivalent rare earth. RE may be a lanthanide. RE can be selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Y, Lu, or a combination thereof. One or more interface layers further comprise a plating reinforcement layer and a stripping reinforcement layer. The plating reinforcement layer and stripping reinforcement layer can be selected from metal alloys or chalcogenides. The plating reinforcement layer and stripping reinforcement layer include Ag, Bi, Sn, Si, Ga, In; alloys of Ag, Bi, Sn, Si; chalcogenides of Ag, Bi, Sn, Si, Ga, In; or a combination thereof. The electrolyte-containing layer is formed in a first processing chamber, and one or more interface layers and alkali metals are formed in a second processing chamber. The alkali metal is lithium. The lamination process includes transferring the release layer, electrolyte-containing layer, one or more interface layers, and alkali metals to the substrate to form an anode film stack.

[0009] In yet another embodiment, an alkali metal-containing film stack for an energy storage device is provided. The alkali metal-containing film stack includes a flexible support layer, a release layer disposed on one surface of the flexible support layer and separable from the flexible support layer, an electrolyte-containing layer formed on one surface of the release layer, one or more interface layers above the solid electrolyte-containing layer, and an alkali metal-containing layer formed on one surface of the one or more interface layers.

[0010] The mounting configuration may include one or more of the following: The flexible support layer includes materials selected from polyethylene terephthalate (PET), paper, and combinations thereof. One or more interface layers include interface dielectric materials selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or combinations thereof. One or more interface layers further include a plating reinforcement layer and a stripping reinforcement layer. The plating reinforcement layer and stripping reinforcement layer are selected from metal alloys or chalcogenides. The plating reinforcement layer and stripping reinforcement layer include Ag, Bi, Sn, Si; alloys of Ag, Bi, Sn, Si; chalcogenides of Ag, Bi, Sn, Si; or combinations thereof.

[0011] In yet another embodiment, a lamination transfer system is provided. The lamination transfer system includes a lamination transfer chamber and a system controller. The system is configured to cause the lamination transfer chamber to carry out a process. This process includes transporting a film stack from a supply hub to a pickup hub, bringing the film stack into contact with a current collector, laminating the film stack onto the current collector, and removing a support layer from the film stack, the film stack including a flexible support layer, a release layer disposed on one side of the flexible support layer and separable from the flexible support layer, an electrolyte-containing layer formed on one side of the release layer, one or more interface layers above the solid electrolyte-containing layer, and an alkali metal-containing layer formed on one side of the one or more interface layers.

[0012] The mounting configuration may include one or more of the following: The flexible support layer includes materials selected from polyethylene terephthalate (PET), paper, and combinations thereof. One or more interface layers include interface dielectric materials selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or combinations thereof. One or more interface layers further include a plating reinforcement layer and a stripping reinforcement layer. The plating reinforcement layer and stripping reinforcement layer are selected from metal alloys or chalcogenides. The plating reinforcement layer and stripping reinforcement layer include Ag, Bi, Sn, Si; alloys of Ag, Bi, Sn, Si; chalcogenides of Ag, Bi, Sn, Si; or combinations thereof.

[0013] In yet another embodiment, instructions are stored in a non-temporary computer-readable medium, and when executed by a processor, these instructions cause a process to perform the operation of the aforementioned device and / or method.

[0014] More specific descriptions of the embodiments briefly summarized above can be obtained by referring to the implementations, some of which are illustrated in the accompanying drawings, so that the features listed above can be understood in detail. However, it should be noted that the accompanying drawings illustrate only typical implementations of this disclosure and should therefore not be considered limiting in scope, as this disclosure may recognize other equally effective implementations. [Brief explanation of the drawing]

[0015] [Figure 1] This flowchart shows selected operations for a method of forming an energy storage device according to one or more implementations of the present disclosure. [Figure 2A] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2B] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2C] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2D] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2E] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2F] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 2G] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 1, according to one or more implementations of this disclosure. [Figure 3]A flowchart showing selected operations of another method of forming an energy storage device in accordance with one or more implementations of the present disclosure. [Figure 4A] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 3 in accordance with one or more implementations of the present disclosure. [Figure 4B] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 3 in accordance with one or more implementations of the present disclosure. [Figure 4C] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 3 in accordance with one or more implementations of the present disclosure. [Figure 4D] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 3 in accordance with one or more implementations of the present disclosure. [Figure 4E] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 3 in accordance with one or more implementations of the present disclosure. [Figure 5] A flowchart showing selected operations of yet another method of forming an energy storage device in accordance with one or more implementations of the present disclosure. [Figure 6A] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 5 in accordance with one or more implementations of the present disclosure. [Figure 6B] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 5 in accordance with one or more implementations of the present disclosure. [Figure 6C] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 5 in accordance with one or more implementations of the present disclosure. [Figure 6D] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 5 in accordance with one or more implementations of the present disclosure. [Figure 6E] A diagram of various stages of manufacturing an energy storage device by the method of FIG. 5 in accordance with one or more implementations of the present disclosure. [Figure 7]A flowchart illustrating a selected operation of yet another method of forming an energy storage device according to one or more implementations of this disclosure is shown. [Figure 8A] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 7, according to one or more implementations of this disclosure. [Figure 8B] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 7, according to one or more implementations of this disclosure. [Figure 8C] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 7, according to one or more implementations of this disclosure. [Figure 8D] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 7, according to one or more implementations of this disclosure. [Figure 8E] This figure shows various steps involved in manufacturing an energy storage device by the method shown in Figure 7, according to one or more implementations of this disclosure. [Figure 9] This is a schematic diagram of a flexible substrate coating apparatus according to one or more mounting configurations of the present disclosure. [Figure 10] This is a schematic diagram of a stacking transfer apparatus according to one or more implementation forms of the present disclosure. [Modes for carrying out the invention]

[0016] To facilitate understanding, identical elements common to the diagrams are indicated using the same reference number where possible. It is intended that elements and features of one implementation can be usefully incorporated into other implementations without further detail.

[0017] This disclosure generally relates to lithium metal-containing devices and methods for manufacturing lithium metal-containing devices. More specifically, this disclosure relates to lithium metal anode device stacks for energy storage devices and methods for manufacturing the same.

[0018] Substrate-Independent Direct Transfer (SIDT) is a method for forming an anode device stack by transferring one or more layers, including an alkali metal layer, such as a lithium-containing layer, to a current collector in a mounting configuration in which lithium metal functions as the anode, or for pre-lithifying an anode material already formed on a current collector. The pre-formed anode material may include, but is not limited to, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, metallized plastics, and copper. In the SIDT process, lithium is formed on one surface of a support layer made of one or more materials, such as polyethylene terephthalate (PET), paper, or a combination thereof. The material on the flexible support layer is directly transferred to either the current collector or the anode, if already present, for pre-lithification. A release layer formed between the alkali metal layer and the flexible substrate allows the lithium and other materials to be detached from the support layer and transferred onto the current collector or anode, if already present.

[0019] In one or more mounting configurations that can be combined with other configurations, a lithium metal anode device stack is manufactured using a plastic-containing substrate with a release layer formed on top. The solid electrolyte is deposited on top of the release layer using a non-vacuum coating technique. The remainder of the device stack is deposited in a vacuum chamber and laminated onto a current collector to form an anode film stack.

[0020] Lithium metal anodes can be manufactured by laminating extruded / rolled lithium onto a current collector, such as a copper current collector. Lithium is a highly reactive element, making quality control a challenge. Furthermore, lithium is unstable in most electrolyte systems and melts even at low temperatures. A sophisticated thin film interface layer is required, and anode film stacks can be fabricated using existing vacuum roll-to-roll technology by combining non-vacuum and vacuum processes in which lithium or an alloy is deposited onto a first substrate before being laminated onto the current collector.

[0021] To improve the performance of lithium metal / alloy anodes, anode film stacks require improved contact surface control. Vacuum roll-to-roll fabrication is not currently used in lithium anode manufacturing. In one or more mounting configurations that can be combined with other configurations, the anode device stack is fabricated on a carrier substrate independent of the anode device stack. This anode device stack enables anodes with good edge quality and engineering control, and also provides an engineering opportunity to develop a high-quality pure interface layer without disrupting the vacuum.

[0022] One or more implementations of this disclosure provide improved contact surface control using vacuum deposition without breaking the vacuum. Roll-to-roll fabrication of interface layers provides a mass manufacturing solution including substrate-independent deposition and transfer (SIDT) of lithium anode device stacks. High-quality lithium alloy can be deposited on the first substrate immediately before stack transfer to maintain the highest quality material in the device stack.

[0023] In one or more mounting configurations that can be combined with other configurations, a plastic-containing substrate, such as a polyethylene terephthalate (PET) substrate, is provided, having a release layer such as silicone or other deposited release layer. The solid electrolyte is deposited on one side of the release layer using conventional non-vacuum coating, such as slot die coating. A roll of the plastic substrate having the solid electrolyte is mounted in a vacuum deposition system. Alkali metal and optionally alloy-compatible interface layers can be deposited in a vacuum environment. To reduce cell impedance, a thin film of metal or alloy with enhanced lithium stripping and deposition behavior is deposited. In some configurations, a lithiophilic material is deposited to promote lateral growth rather than island growth for uniform plating / stripping behavior. Then, lithium metal or an alloy thereof is deposited. The processes after alkali metal deposition can be carried out in a single chamber without breaking the vacuum. The web may be slit depending on the dimensional requirements of the electrodes. The surface of the lithium or lithium alloy is then laminated with a current collector. The cathode structure and / or separator can be integrated with the formed anode device stack to form an energy storage device.

[0024] The mounting configuration may include one or more of the following: The substrate includes a PET material. The solid electrolyte layer includes a polymer electrolyte material. The interface layer includes at least one of an interface dielectric material, a plating reinforcement layer, a stripping reinforcement layer, and a lithium-hydrophilic layer. The interface layer is deposited under vacuum. The interface layer is deposited under vacuum in a roll-to-roll deposition system. The contact surface dielectric layer may be selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or a combination thereof. RE may be a trivalent rare earth. RE may be a lanthanide. RE may be selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Y, Lu, or a combination thereof. The plating reinforcement layer and stripping reinforcement layer may be selected from metals, metal alloys, or metal chalcogenides. The plating reinforcement layer and stripping reinforcement layer may be selected from Ag, Bi, Sn, Si, Ga, In; metal alloys or chalcogenides of Ag, Bi, Sn, Si, Ga, In; or combinations thereof. Deposition of alkali metals or alloys thereof, e.g., lithium metal or an alloy thereof. The interface layer and alkali metal layer or alloy thereof can be deposited without breaking the vacuum. The anode device stack can be cut according to the dimensional requirements of the electrodes and then laminated and transferred onto the current collector. The anode device stack is transferred from the substrate to the current collector via a substrate-independent deposition and transfer (SIDT) process. The anode device stack is laminated onto the current collector. The current collector may include, but is not limited to, copper, metallized plastic, paper, stainless steel, metal mesh, or a combination thereof. The anode device stack and anode current collector are integrated with the cathode structure and / or separator to form an energy storage device. The cathode structure may include a cathode material and a cathode current collector. The cathode structure may be formed by lithium-ion coating lines.

[0025] While the specific substrates on which some of the mounting configurations described herein can be implemented are not limited, it should be noted that implementing these configurations on flexible substrates, including web-based substrates, panels, and individual sheets, is particularly beneficial. Flexible substrates may also be in the form of foils, films, or sheets.

[0026] It should also be noted that flexible substrates or webs used in the configurations described herein are typically characterized by their bendability. The term “web” can be used synonymously with the terms “strip,” “flexible substrate,” or “flexible conductive substrate.” For example, the webs described in the configurations herein may be made of polymer material.

[0027] Figure 1 illustrates a flowchart of Method 100 for manufacturing an energy storage device according to one or more implementations of the present disclosure. Figures 2A-2G illustrate diagrams of the various stages of manufacturing an energy storage device according to one or more implementations of the present disclosure. Although Figures 2A-2G are described in relation to Method 100, the structures disclosed in Figures 2A-2G are not limited to Method 100 and may be standalone structures independent of Method 100. Similarly, although Method 100 is described in relation to Figures 2A-2G, Method 100 is not limited to the structures disclosed in Figures 2A-2G and may be standalone structures independent of the structures disclosed in Figures 2A-2G. Figures 2A-2G only illustrate partial schematic diagrams of an energy storage device structure 200, and the energy storage device structure 200 may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for brevity. While method 100 illustrated in Figure 1 is described in order, it should also be noted that other process sequences, including one or more operations omitted and / or added, and / or rearranged in a different desired order, are within the scope of implementations of the disclosure provided herein.

[0028] Referring to Figure 2A, operation 110 provides the flexible support layer 210. The flexible support layer 210 has a front side 210f (also called the front) and a back side 210b (also called the back) opposite the front side 210f. The flexible support layer 210 may contain any suitable material that is compatible with the processing conditions to be applied. In some mounting configurations, the flexible support layer 210 includes multiple sub-layers. In one or more mounting configurations that can be combined with other mounting configurations, the flexible support layer 210 may be one or more layers selected from plastics, polymer materials, metallized plastics, metals, paper, multilayers thereof, or combinations thereof, or may include these. Examples of suitable polymer materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), poly(methyl methacrylate) (PMMA), cellulose triacetate (TAC), polypropylene (PP), polyethylene (PE), polycarbonate (PC), multilayers thereof, or combinations thereof.

[0029] In one or more mounting configurations that can be combined with other mounting configurations, the flexible support layer 210 has a thickness in the range of approximately 1 micron to approximately 100 microns, or approximately 1 micron to approximately 100 microns, or approximately 10 microns to approximately 50 microns, or approximately 25 microns to approximately 50 microns.

[0030] Referring to Figure 2B, in operation 120, the release layer 220 is formed on the front side 210f of the flexible support layer 210. In one or more mounting configurations that can be combined with other configurations, the release layer 220 and the flexible support layer 210 are fabricated in advance. The release layer 220 has a front side 220f (also called the front surface) and a back side 220b (also called the back surface) opposite the front side 220f. In one or more mounting configurations, the release layer 220 is deposited on the front side 210f of the flexible support layer 210 such that the back surface 220b of the release layer 220 is in contact with the front side 210f of the flexible support layer 210. Any suitable process can be used to form the release layer 220 on the front side of the flexible support layer 210. The release layer 220 can be deposited using non-vacuum coating techniques, such as coating techniques performed in air.

[0031] The release layer 220 may be, or contain, any material suitable for delaminating the anode device stack during the SIDT process. The release layer 220 may also be, or contain, a polymer release layer (e.g., plastics, silicones, polymethyl acrylate (PMA), polyethylene terephthalate (PET), fluorocarbons, polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), etc.), poly(olefin sulfone), organic materials, or inorganic materials, among other materials. In some packaging configurations that can be combined with other packaging configurations, the release layer 220 comprises one or more nanosheets, such as one or more two-dimensional (2D) materials. In one or more packaging configurations that can be combined with other packaging configurations, the release layer has a thickness of approximately 1 nm to approximately 500 nm, for example, approximately 10 nm to approximately 300 nm, for example, approximately 50 nm to approximately 200 nm. In some packaging configurations, the release layer comprises multiple sublayers, each having a thickness of approximately 5 nm or less.

[0032] The organic or polymer-based release layer can be deposited using a wet chemical coating process, such as slot die coating, comma bar coating, or gravure coating, or a vacuum deposition technique as described.

[0033] The exfoliation layer 220 may be or contain an inorganic material, such as BN, AlOx, AlOOH, Al, or a combination thereof. In certain implementations, the exfoliation layer 220 may include a multilayer structure, such as an Al / AlOx / AlOOH multilayer structure. The inorganic-based exfoliation layer can be deposited using PVD techniques, such as vapor deposition techniques, such as sputter deposition and electron beam deposition techniques.

[0034] In one or more implementation configurations, the polymer material of the release layer 220 is selected so as to allow the SIDT stack to be detached from the flexible support layer 210 by photoinitiated lift-off, and the polymer material interacts with photons entering from the flexible support layer 210.

[0035] In one or more packaging configurations, the release layer 220 may be or contain a photo-induced depolymerizable polymer material. In one or more packaging configurations, the polymer material may be or contain a photo-induced depolymerizable poly(olefin sulfone) material. The poly(olefin sulfone) can be combined with a photobase generator (PBG). The poly(olefin sulfone) can be doped with a photosensitizer such as pyridine N-oxide. The depolymerization process can be induced, for example, by X-ray, electron beam irradiation, or low-energy irradiation. Suitable poly(olefin sulfon) materials include poly(1-butenesulfone) (PBS), poly(1-pentanesulfone) (PPS), poly(1-hexanesulfone) (PHS), poly(1-octenesulfone) (POS), poly(cyclopentenesulfone), poly(2-methyl-1-butenesulfone) (PMBS), poly(2-methyl-1-pentenesulfone) (PMPS), poly(2-methyl-1-hexenesulfone) (PMHS), poly(2-methyl-1-nonenesulfone) (PMNS), poly(cyclohexenesulfone), or combinations thereof.

[0036] As used herein, “2D material” refers to an atomically thin crystalline solid having a single or a few layered structures. In some implementations, the 2D materials herein have intralayer covalent bonds and interlayer van der Waals bonds. In some implementations, the 2D material may have properties selected from the group consisting of high carrier mobility, superconductivity, mechanical flexibility, high thermal conductivity, high light and UV adsorption, peel strength to silicone of about 3 to about 100 gram force / inch, weak interlayer bonding, and combinations thereof. Peel strength can be measured using a TESA 7475 test tape with a width of 25 mm, using a peel angle of 180° and a peel speed of 300 mm / min (3M method). Although not bound by theory, it is thought that selecting a 2D material with weak interlayer bonding will allow the release layer to be easily peeled from the support layer later. In some implementations, each layer of the SIDT stack 100 may have a melting temperature higher than the melting temperature of the alkali metal-containing layer.

[0037] In some implementations, each layer may have a melting point equal to and / or correspondingly lower than that of each additional layer, such that the flexible support layer 210 has the highest melting point, the release layer 220 has a lower melting point than the support layer, and the alkali metal-containing layer has the lowest melting point. In some implementations, the two-dimensional material includes one or more of the following: titanium disulfide (TiS2), tungsten disulfide (WS2), molybdenum disulfide (MoS2), boron nitride (BN), aluminum hydroxide oxide (AlHO2), MoO3, graphene, carbon nitride, layered double hydroxides, their derivatives, and combinations thereof. In some implementations, the 2D material includes metal nitrides, metal sulfides, metal hydroxides, carbon-containing materials, their derivatives, or combinations thereof.

[0038] Referring to Figure 2C, in operation 130, a solid electrolyte interface (SEI) layer 230 is optionally formed on one side of the release layer 220. The solid electrolyte interface layer 230 has a front side 230f (also called the front) and a back side 230b (also called the back) opposite the front side 230f. In one or more configurations, the solid electrolyte interface layer 230 is deposited on the front side 220f of the release layer 220 such that the back side 230b of the solid electrolyte interface layer 230 is in contact with the front side 220f of the release layer 220. Any suitable process can be used to form the solid electrolyte interface layer 230 on the front side 220f of the release layer 220. The solid electrolyte interface layer 230 can be deposited using non-vacuum coating techniques.

[0039] The solid electrolyte interface layer 230 may contain any suitable material with the target ion conductivity and compatibility. In some implementations, the solid electrolyte interface layer 230 may contain, or may contain, a metal salt such as a lithium salt. The lithium salt may be one or more of the following: LiPF6, LiAsF6, LiCF3SO3, LiN(CF3SO3)3, LiBF6, LiClO4BETTE electrolyte, or a combination thereof. The electrolyte may be in a gel or polymer matrix medium.

[0040] In one or more implementation configurations, the solid electrolyte interface layer 230 is made of fluorocarbon (PTFE, PVDF), LiF, Li2CO3, MgO, AlOx, AlHO2, RENiO3 (RE = rare earth), BN, BaTiO3, Li4Ti5O12, ZrO2, TiO2, silicon-doped lithium tantalum phosphate, e.g., Li(1+x)Ta2P(1-x)SixO8, Li1.5Ta2P0.5Si0.5O8, lithium tantalum phosphate, e.g., LiTa The material may be selected from or contain 2PO8 (LTPO), Li2Ta2SiO8 (LTSO), Li0.34La0.56TiO3, lithium aluminum titanium phosphate, e.g., Li1.3Al0.3Ti1.7(PO4)3 (LATP), lithium aluminum germanium phosphate, e.g., Li1.3Al0.3Ge1.7(PO4)3 (LAGP), garnet Li7La3Zr2O12 (LLZO), or combinations thereof.

[0041] In one or more implementation configurations, the solid electrolyte interface layer 230 can be formed using non-vacuum coating techniques. Suitable coating techniques include, but are not limited to, slot die coating processes, doctor blade coating processes, three-dimensional (3D) printing processes, or combinations thereof. In one or more alternative implementation configurations, the solid electrolyte interface layer 230 can be formed using vacuum coating techniques.

[0042] After operation 130 and before operation 140, the partially formed device structure 200 may be transferred to a vacuum coating system, for example, the flexible substrate coating apparatus 900 shown in Figure 9.

[0043] Referring to Figure 2D, in operation 140, one or more interface layers 240 are optionally formed on one surface of the solid electrolyte interface layer 230. The interface layer 240 is located between the release layer 220 and the alkali metal-containing layer 250. The interface layer 240 may include, or be composed of, at least one of the following: interface dielectric material, plating strengthening layer and stripping strengthening layer, and lithium-hydrophilic layer. The interface layer 240 can be deposited under vacuum. The interface layer 240 can be deposited under vacuum in a roll-to-roll deposition system, for example, the flexible substrate coating apparatus 900 shown in Figure 9. The contact surface dielectric layer may be selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate (RENiO3), or a combination thereof. RE may be a trivalent rare earth. RE may be a lanthanide. RE may be selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Y, Lu, or a combination thereof. RE may be selected from Sm, Nd, and Eu. RE nickelate can be doped with ions. Suitable ions for doping include lithium ions, sodium ions, magnesium ions, potassium ions, hydrogen ions, and aluminum ions. In one example, RE nickelate is SmNiO3 doped with lithium ions. The plating reinforcement layer and stripping reinforcement layer may be or contain a metal alloy or chalcogenide. The plating reinforcement layer and stripping reinforcement layer may be or contain Ag, Bi, Sn, Si, Cu; a metal alloy or chalcogenide of Ag, Bi, Sn, Si, Cu; or a combination thereof. The lithium-hydrophilic layer may be at least one of the following: metals containing Al, Au, Ag, Bi, Pt, Zn, Si, Sn, Mg, In, Ga, or Cu; alloys thereof; or metal oxides containing Li4Ti5O12, RENiO3, AlOx, CuO, ZnO, CoO, or MnO.The interface layer 240 can be deposited by vapor deposition techniques, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), thermal evaporation, or physical vapor deposition (PVD) such as sputtering.

[0044] In one or more mounting configurations that can be combined with other mounting configurations, one or more interface layers 240 include a dielectric layer. The dielectric layer may be lithium fluoride, aluminum oxide, aluminum hydroxide, boron nitride, carbon nitride, titanium oxide, lithium titanium oxide, zirconium oxide, tantalum oxide, barium titanate, lithium zirconium oxide, molybdenum oxide, silicon oxide, lithium silicon oxide, or a combination thereof.

[0045] In one or more mounting configurations that can be combined with other mounting configurations, one or more interface layers 240 include a plating reinforcement layer and / or stripping reinforcement layer(s). The plating reinforcement layer and / or stripping reinforcement layer(s) may include a metal layer. The metal layer may be silver, bismuth, tin, copper, aluminum, silicon, or a combination thereof. The plating reinforcement layer and / or stripping reinforcement layer(s) may include a metal layer. The metal layer may be silver, bismuth, tin, copper, aluminum, silicon, indium, gallium, or a combination thereof. The plating reinforcement layer and / or stripping reinforcement layer(s) may be selected from Ag, Bi, Sn, Si, Cu, Al; alloys or chalcogenides of Ag, Bi, Sn, Si metals; or a combination thereof.

[0046] In one or more packaging configurations that can be combined with other packaging configurations, one or more interface layers 240 include a lithophilic layer. One lithophilic layer may allow for the lateral growth of an alkali metal-containing layer 250 to be deposited later. The lithophilic layer may be or contain a metal or a metal oxide. The lithophilic layer may be at least one of the following: metals including Al, Au, Ag, Bi, Pt, Zn, Si, Sn, Mg, In, Ga, or Cu, alloys thereof, or metal oxides including Li4Ti5O12, RENiO3, AlOx, CuO, ZnO, CoO, or MnO, or contain a lithophilic layer. The lithophilic layer can be deposited by at least one process selected from the group consisting of immersion, spin coating, dip coating, spray coating, doctor blade coating, solution casting, drop coating, PVD, and CVD.

[0047] Referring to Figure 2E, in operation 150, the alkali metal-containing layer 250 is formed on one side of the front 220f of the release layer 220. The alkali metal-containing layer 250 includes a front 250f (also called the front surface) and a back 250b (also called the back surface) opposite the front 250f. In some configurations where a solid electrolyte interface layer 230 and one or more interface layers 240 are present, the alkali metal-containing layer 250 may be formed directly on an underlying layer, for example, the solid electrolyte interface layer 230 and one or more interface layers 240. In some configurations where a solid electrolyte interface layer 230 and one or more interface layers 240 are not present, the alkali metal-containing layer 250 is formed directly on the front 220f of the release layer 220. The alkali metal-containing layer 250 may be lithium or contain lithium. The alkali metal-containing layer 250 can be deposited under vacuum. The alkali metal-containing layer 250 can be deposited under vacuum in a roll-to-roll deposition system, such as the flexible substrate coating apparatus 900 shown in Figure 9. The alkali metal-containing layer 250 can also be deposited by a physical vapor deposition process, such as an evaporation process or a sputtering process. The evaporation process may be an electron beam evaporation process or a thermal evaporation process.

[0048] Referring to Figure 2E, the SEI layer 230, one or more interface layers 240, and alkali metal-containing layer 250 form the SIDT film stack 255. The SIDT film stack 255 is shown to include a release layer 220, but the SIDT film stack 255 may or may not include the release layer 220.

[0049] The SIDT film stack described herein is formed such that an alkali metal-containing layer 250, for example, a lithium layer, is deposited last on top of the SIDT film stack. By depositing the lithium layer last, it becomes possible to form the film stack without damaging the lithium layer, which typically has a lower melting point than other materials formed within the energy storage device. Conventional methods for forming energy storage devices involve directly depositing molten lithium on top of a current collector in the formation of a lithium metal anode, or on top of an anode material in a pre-lithified mounting configuration. These methods further include maintaining the underlying substrate when the lithium layer is formed to prevent damage to the lithium. In contrast, the SIDT film stack 255 and method described herein allow the alkali metal-containing layer 250 to be formed last, before transferring the SIDT film stack 255 to a current collector during operation 160.

[0050] In some implementations that can be combined with other implementations, a passivation layer can be optionally included in the SIDT film stack 255. In some implementations, the passivation layer contains alkali metal carbonate in the alkali metal-containing layer 250. In some implementations that can be combined with other implementations, the alkali metal-containing layer 250 is a lithium layer, and the passivation layer contains lithium carbonate. The passivation layer can be formed by exposing the alkali metal-containing layer 250 to carbon dioxide. In some implementations, the alkali metal-containing layer 250 is exposed to carbon dioxide in the presence of heat. Although not bound by theory, it is thought that carbon dioxide reacts with the alkali metal to form a thin layer of alkali metal carbonate on the exposed surface of the alkali metal-containing layer 250. In some implementations, the alkali metal carbonate passivation layer, for example, the lithium carbonate passivation layer, may have a thickness in the range of approximately 50 nm to approximately 100 nm. The alkali metal carbonate passivation layer can function as a protective layer for the alkali metal-containing layer 250. For example, an alkali metal carbonate passivation layer can protect the alkali metal-containing layer 250 from oxidation and damage during storage and transportation.

[0051] After operation 150 and before operation 160, the device structure 200 including the SIDT film stack 255 can be transferred from a vacuum coating system, for example, the flexible substrate coating apparatus 900 shown in Figure 9, to a lamination transfer apparatus, for example, the lamination transfer system 1000 shown in Figure 10. The lamination transfer process may include applying the flexible substrate 260 to the front side 250f of the alkali metal-containing layer 250 and removing the flexible support layer 210 and optionally the release layer 220 from the SEI layer 230 to form the anode film stack 265.

[0052] Referring to Figure 2F, in operation 160, the SIDT film stack 255 is transferred from the flexible support layer 210 to the flexible substrate 260 to form the anode film stack 265. Operation 160 may include laminating and transferring onto a current collector to form the anode stack. In some mounting configurations, if pre-lithiumization is involved, the anode material may already be formed on one surface of the flexible substrate 260, and the alkali metal-containing layer 250 is in contact with the anode material formed on one surface of the flexible substrate 260. The flexible substrate 260 may be or include a flexible film such as a CPP film (i.e., casting polypropylene film), an OPP film (i.e., oriented polypropylene film), or a PET film (i.e., polyethylene terephthalate film). Alternatively, the flexible substrate may be pre-coated paper, polypropylene (PP) film, PEN film, polylactic acid (PLA) film, or PVC film. The flexible substrate 260 may consist of one or more current collectors, or may contain them, and the current collectors may include aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), manganese (Mn), chromium (Cr), stainless steel, clad materials, alloys thereof, and combinations thereof. In certain mounting configurations, the flexible substrate 260 may be copper, or may contain copper.

[0053] In one or more mounting configurations that can be combined with other configurations, the release layer 220 is transferred or partially transferred together with the SIDT film stack as shown in Figure 2F during operation 160. Alternatively, in other mounting configurations, the release layer 220 remains on or partially on the flexible support layer 210 after operation 160.

[0054] Referring to Figure 2G, in operation 170, the anode film stack 265 can be combined with a separator 290, a cathode stack 285, or both the separator 290 and the cathode stack 285 to form an energy storage device structure 400. The separator 290 may include, as a non-limiting example, a microporous polymer separator containing a polyolefin. The polyolefin can be a homopolymer (derived from a single monomer component) or a heteropolymer (derived from one or more monomer components), and it may be linear or branched. If the heteropolymer is derived from two monomer components, the polyolefin can take any copolymer chain sequence, including a copolymer chain sequence of a block copolymer or a random copolymer. Similarly, if the polyolefin is a heteropolymer derived from two or more monomer components, it may likewise be a block copolymer or a random copolymer. In certain implementations, the polyolefin may be polyethylene (PE), polypropylene (PP), or a blend of PE and PP, or a multilayer porous membrane of PE and / or PP. Commercially available polyolefin porous membranes include CELGARD® 2500 (single-layer polypropylene separator) and CELGARD® 2320 (triple-layer polypropylene / polyethylene / polypropylene separator), both available from Celgard LLC.

[0055] In one or more mounting configurations that can be combined with other mounting configurations, the cathode stack 285 includes a cathode current collector 280 and a cathode material 270. The cathode current collector 280 may be any of the described flexible film, as well as aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), tin (Sn), silicon (Si), manganese (Mn), magnesium (Mg), their alloys, and combinations thereof, or may include any of these. In certain mounting configurations, the cathode current collector 280 may be aluminum, or may include aluminum.

[0056] The cathode material 270 may be any suitable cathode material or may contain any suitable cathode material. The cathode material 270 or cathode may be any material compatible with the anode or may contain any suitable material, and may contain an intercalation compound, an insertion compound, or an electrochemically active polymer. Suitable intercalation materials include, for example, sulfur, lithium-containing metal oxides, MoS2, FeS2, MnO2, TiS2, NbSe3, LiCoO2, LiNiO2, LiMnO2, LiMn2O4, V6O 13 , and V2O5. Suitable polymers include, for example, polyacetylene, polypyrrole, polyaniline, and polythiophene. In some implementations, the cathode material 270 includes a polymer binder material as described herein. The cathode material 270 or cathode may be, or contain, a layered oxide such as lithium cobalt oxide, olivine such as lithium iron phosphate, or spinel such as lithium manganese oxide. Examples of lithium-containing oxides may be layered, for example, lithium cobalt oxide (LiCoO2), or LiNi x Co 1-2xMnO2, LiNiMnCoO2 (「NMC」), LiNi 0.5 Mn 1.5 O4, Li(Ni 0.8 Co 0.15 Al 0.05 )O2, LiMn2O4 and other mixed metal oxides, and doped lithium-rich layered-layered materials, where x is zero or a non-zero number. Examples of phosphates are iron olivine (LiFePO4) and its variants (such as LiFe (1-x) Mg x PO4, etc.), LiMoPO4, LiCoPO4, LiNiPO4, Li3V2(PO4)3, LiVOPO4, LiMP2O7, or LiFe 1.5 P2O7, or may contain this, and x is zero or a non-zero number. Examples of fluorophosphates are LiVPO4F, LiAlPO4F, Li5V(PO4)2F2, Li5Cr(PO4)2F2, Li2CoPO4F, or Li2NiPO4F, or may contain this. Examples of silicates are Li2FeSiO4, Li2MnSiO4, or Li2VOSiO4, or may contain this. Examples of non-lithium compounds are Na5V2(PO4)2F3, or may contain this.

[0057] Figure 3 illustrates a flowchart of Method 300 for manufacturing an energy storage device according to one or more implementations of the present disclosure. Figures 4A–4E illustrate diagrams of the various stages of manufacturing an energy storage device according to one or more implementations of the present disclosure. Although Figures 4A–4E are described in relation to Method 300, the structures disclosed in Figures 4A–4E are not limited to Method 300 and may be standalone structures independent of Method 300. Similarly, although Method 300 is described in relation to Figures 4A–4E, Method 300 is not limited to the structures disclosed in Figures 4A–4E and may be standalone structures independent of the structures disclosed in Figures 4A–4E. Figures 4A–4E only illustrate partial schematic diagrams of an energy storage device structure 400, and the energy storage device structure 400 may include any number of additional layers and / or additional materials common to energy storage devices, which should be understood as not shown for brevity. While the method 300 illustrated in Figure 3 is described in order, it should also be noted that other process sequences, including one or more operations omitted and / or added, and / or rearranged in a different desired order, are within the scope of implementations of the disclosure provided herein.

[0058] In operation 310, a flexible support layer is provided. Referring to Figure 4A, the flexible support layer may be a flexible support layer 210 as described. In operation 320, a release layer is formed on the front side 210f of the flexible support layer 210. The release layer may be a release layer 220 as described. In one or more mounting configurations that can be combined with other mounting configurations, the release layer 220 and the flexible support layer 210 are fabricated in advance.

[0059] In operation 330, one or more fluoropolymer-containing layers are formed on or on one surface of the release layer 220. Referring to Figure 4A, one or more fluoropolymer-containing layers 430a-b (collectively referred to as 430) are formed on or on one surface of the release layer 220. Various fluoropolymers can be used, but in certain packaging configurations, polyvinyl fluoride (PVF), polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), perfluoroalkoxyalkane (PFA), fluorinated ethylene propylene (FEP), ethylene tetrafluoroethylene (ETFE), ethylene chlorotrifluoroethylene (ECTFE), perfluoroelastomer (FFPM), or a combination thereof can be used. In one packaging configuration that can be combined with other packaging configurations, the first fluoropolymer-containing layer 430a is or contains PVDF, and the second fluoropolymer-containing layer 430b is or contains PTFE. In one or more implementation configurations, one or more fluoropolymer-containing layers 430 further include a photosensitive material that is activated during the pattern lift-off process.

[0060] Any suitable deposition process can be used to deposit one or more fluoropolymer-containing layers 430. The deposition process may be selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), and wet chemical polymerization. In non-limiting examples, physical vapor deposition (PVD) processes may include thermal evaporation, sputtering, etc. In non-limiting examples, chemical vapor deposition (CVD) may include low-pressure chemical vapor deposition (LPCVD), thermal CVD, etc. Wet chemistry may include monomer-polymerization processes. After deposition, one or more fluoropolymer-containing layers 430 may be subjected to secondary heat treatment, for example, exposure to 120 degrees Celsius in an inert atmosphere for about 30 minutes.

[0061] In one or more implementation configurations that can be combined with other configurations, the temperature inside the reaction chamber during the deposition process is approximately 180 degrees Celsius or less. The pressure inside the reaction chamber where the deposition process occurs is high vacuum (10°C) from the surroundings. -6 It can be up to torr. In one or more implementations, the atmosphere inside the reaction chamber is inert, for example, an argon atmosphere.

[0062] Referring to Figure 4B, in operation 340, an alkali metal-containing layer is formed above or on one or more fluoropolymer-containing layers 430. The alkali metal-containing layer may be an alkali metal-containing layer 250 as described. In some implementations, if any of the one or more fluoropolymer-containing layers 430 are present, the alkali metal-containing layer 250 may be formed directly on the underlying layer, for example, on any of the one or more fluoropolymer-containing layers 430. In one implementation, the process conditions of operation 340 are selected such that the alkali metal-containing layer 250 interacts with the underlying fluoropolymer layer to form an interface layer, for example, an interface layer 450 as depicted in Figure 4C.

[0063] In operation 350, the energy storage device structure 400 is optionally exposed to a post-treatment process. The post-treatment process may be a thermal treatment process. Examples of thermal treatment processes include induction heating, infrared lamp heating, and laser treatment. Referring to Figure 4C, the thermal treatment process forms an interface layer 450 from the lithium metal of the alkali metal-containing layer 250 and the underlying fluoropolymer layer, for example, a second fluoropolymer-containing layer 430b. The interface layer 450 may be a lithium fluoride (LiF) layer. The alkali metal-containing layer 250, the interface layer 450 (if present), and one or more fluoropolymer-containing layers 430 form a SIDT film stack 455. The SIDT film stack 455 may or may not include the release layer 220 or a portion of the release layer 220.

[0064] In one or more implementation configurations, the post-treatment process is a laser treatment process, in which a laser is irradiated through the PET / PTFE / Li stack to activate the contact surface between the alkali metal-containing layer 250 and the second fluoropolymer-containing layer 430b, for example, the Li-PTFE contact surface, from the PET side, thereby enhancing the reaction with Li / PTFE and forming a LiF layer. Furthermore, exposure to the laser may help induce a Li migration process (formation of dense LiF from the relatively low-density polymer-Li contact surface, which generates void volume). This void volume allows for easier removal of the flexible support layer 210 during the lamination transfer process of operation 360.

[0065] Laser or UV post-treatment can also be used for localized contact surface debonding by selective heating, which could be used for pattern transfer. An alkali metal / alloy film on a plastic substrate with a laser or UV-sensitive interface layer is sandwiched on a current collector (e.g., Cu, Ni, SS, metallized plastic, etc.). The layer stack is first passed through a roller for mechanical contact, and then a laser or UV light is shone on selected areas to transfer the alkali metal / alloy pattern onto the current collector. Furthermore, the current collector can be patterned so that areas not requiring alkali metal / alloy are covered with an ink-printed pattern using Teflon or similar material with black carbon pigment. The ink pattern can be easily removed after SIDT, for example, by laser scribing.

[0066] Referring to Figure 3, operation 350 is shown to be performed before the transfer process of operation 360, but in one or more implementations, operation 350 is performed after or during the stacking transfer process of operation 360.

[0067] After operation 350 and before operation 360, the device structure 400, including the SIDT film stack 455, can be transferred from a vacuum coating system, for example, the flexible substrate coating apparatus 900 shown in Figure 9, to a multilayer transfer apparatus, for example, the multilayer transfer apparatus shown in Figure 10.

[0068] In some implementations that can be combined with other implementations, the passivation layer can be optionally included in the SIDT film stack 455 as described.

[0069] Referring to Figure 4D, in operation 360, the SIDT film stack 455 is transferred from the flexible support layer 210 to the flexible substrate 260 to form the anode film stack 465. Operation 360 may include lamination transfer onto a current collector to form the anode stack. The lamination transfer process can be carried out in a lamination transfer apparatus, for example, the lamination transfer system 1000 shown in Figure 10. The lamination transfer process may include applying the flexible substrate 260 to the front side 250f of the alkali metal-containing layer 250 and removing the flexible support layer 210 and optionally the release layer 220 from one or more fluoropolymer-containing layers 430 to form the anode film stack 465.

[0070] In one or more mounting configurations that can be combined with other configurations, the release layer 220 is transferred or partially transferred together with the SIDT film stack 455. Alternatively, in other mounting configurations, the release layer 220 remains on or partially on the flexible support layer 210 after operation 160.

[0071] Referring to Figure 4E, in operation 370, the anode film stack 465 can be combined with the separator 290, the cathode stack 285, or both the separator 290 and the cathode stack 285 to form an energy storage device structure 400.

[0072] Figure 5 illustrates a flowchart of Method 500 for manufacturing an energy storage device according to one or more implementations of the present disclosure. Figures 6A–6E illustrate diagrams of the various stages of manufacturing an energy storage device according to one or more implementations of the present disclosure. Although Figures 6A–6E are described in relation to Method 500, the structures disclosed in Figures 6A–6E are not limited to Method 500 and may be standalone structures independent of Method 500. Similarly, although Method 500 is described in relation to Figures 6A–6E, Method 500 is not limited to the structures disclosed in Figures 6A–6E and may be standalone structures independent of the structures disclosed in Figures 6A–6E. Figures 6A–6E only illustrate partial schematic diagrams of an energy storage device structure 600, and the energy storage device structure 600 may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for brevity. While the method 500 illustrated in Figure 5 is described in order, it should also be noted that other process sequences, including one or more operations omitted and / or added, and / or rearranged in a different desired order, are within the scope of implementations of the disclosure provided herein.

[0073] In operation 510, a flexible support layer is provided. Referring to Figure 6A, the flexible support layer may be a flexible support layer 210 as described. In operation 520, a release layer is formed on the front side 210f of the flexible support layer 210. The release layer may be a release layer 220 as described. In one or more mounting configurations that can be combined with other mounting configurations, the release layer 220 and the flexible support layer 210 are fabricated in advance.

[0074] In operation 530, one or more fluoropolymer-containing layers are formed on or on one surface of the release layer 220. Referring to Figure 6A, one or more fluoropolymer-containing layers 430 are formed on or on one surface of the release layer 220. In one packaging configuration that can be combined with other packaging configurations, one or more fluoropolymer-containing layers 430 are or contain PVDF.

[0075] In operation 540, one or more interface layers 610 are formed above or on one or more fluoropolymer-containing layers 430. One or more interface layers 610 are located between one or more fluoropolymer-containing layers 430 and alkali metal-containing layers 250. One or more interface layers 610 may be similar to interface layer 240. One or more interface layers 610 may include, or be, at least one of interface dielectric material, plating strengthening layer and stripping strengthening layer, and lithium-hydrophilic layer, as described. One or more interface layers 610 can reduce the impedance in the energy storage device structure 600. One or more interface layers 610 can be deposited under vacuum. One or more interface layers 610 can be deposited by vapor deposition methods, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), thermal evaporation, or physical vapor deposition (PVD) such as sputtering. One or more interface layers 610 can be deposited under vacuum in a roll-to-roll deposition system, for example, in a flexible substrate coating apparatus 900 shown in Figure 9. In one configuration that can be combined with other configurations, one or more interface layers 610 include a first interface layer 610a and a second interface layer 610b, as shown in Figure 6B. The first interface layer 610a may be or contain an interface dielectric material. The first interface layer 610a may be or contain lithium fluoride. The lithium fluoride can be deposited directly on an underlying layer, for example, one or more fluoropolymer-containing layers 430. The lithium fluoride can be deposited by a physical vapor deposition process, for example, a sputtering process or an evaporation process. The sputtering process may include sputtering using a lithium fluoride (LiF) target.The evaporation process may include evaporating lithium fluoride (LiF) into the gas phase.

[0076] The second interface layer 610b may be or contain a lithophilic material. The lithophilic material may allow for the lateral growth of the alkali metal-containing layer 250 that is deposited later. The lithophilic material may be or contain a metal or a metal oxide. The lithophilic material may be at least one of the following: metals containing Al, Au, Ag, Bi, Pt, Zn, Si, Sn, Mg or Cu, alloys thereof, or metal oxides containing CuO, ZnO, CoO or MnO. The lithophilic material can be deposited by at least one process selected from the group of vapor phase deposition processes such as immersion, spin coating, dip coating, spray coating, doctor blade coating, solution casting, drop coating, ALD, PVD and CVD.

[0077] Referring to Figure 6C, in operation 550, an alkali metal-containing layer is formed above or on one or more interface layers 610. The alkali metal-containing layer may be an alkali metal-containing layer 250 as described. In some configurations, if a second interface layer 610b is present, the alkali metal-containing layer 250 may be formed directly on the second interface layer 610b.

[0078] As shown in Figure 6C, one or more fluoropolymer-containing layers 430, interface layers 610a, 610b, and alkali metal-containing layer 250 form a SIDT film stack 655. The SIDT film stack 655 may or may not include a release layer 220 or a portion of a release layer 220 as described.

[0079] After operation 550 and before operation 560, the device structure 600 including the SIDT film stack 655 can be transferred to a multilayer transfer system, for example, the multilayer transfer system 1000 shown in Figure 10. In some mounting configurations that can be combined with other mounting configurations, a passivation layer can be optionally included in the SIDT film stack 655 as described.

[0080] Referring to Figure 6D, in operation 560, the SIDT film stack 655 is transferred from the flexible support layer 210 to the flexible substrate 260 to form the anode film stack 665. Operation 560 may include lamination transfer onto a current collector to form the anode stack. The lamination transfer process can be carried out in a lamination transfer apparatus, for example, the lamination transfer system 1000 shown in Figure 10. The lamination transfer process may include applying the flexible substrate 260 to the front side 250f of the alkali metal-containing layer 250 and removing the flexible support layer 210 and optionally the release layer 220 from one or more fluoropolymer-containing layers 430 to form the anode film stack 665.

[0081] In one or more mounting configurations that can be combined with other configurations, the release layer 220 is transferred or partially transferred together with the SIDT film stack 655. Alternatively, in other mounting configurations, the release layer 220 remains on or partially on the flexible support layer 210 after operation 560.

[0082] Referring to Figure 6E, in operation 570, the anode film stack 665 can be combined with the separator 290, the cathode stack 285, or both the separator 290 and the cathode stack 285 to form an energy storage device structure 600 as described.

[0083] Figure 7 illustrates a flowchart of Method 700 for manufacturing an energy storage device according to one or more implementations of the present disclosure. Figures 8A–8E illustrate diagrams of the various stages of manufacturing an energy storage device structure 800 according to one or more implementations of the present disclosure. Although Figures 8A–8E are described in relation to Method 700, it should be understood that the structures disclosed in Figures 8A–8E are not limited to Method 700 and may be standalone structures independent of Method 700. Similarly, although Method 700 is described in relation to Figures 8A–8E, it should be understood that Method 700 is not limited to the structures disclosed in Figures 8A–8E and may be standalone structures independent of the structures disclosed in Figures 8A–8E. Figures 8A–8E only illustrate partial schematic diagrams of the energy storage device structure 800, and it should be understood that the energy storage device structure 800 may include any number of additional layers and / or additional materials common to energy storage devices, which are not shown for the sake of brevity. While the method 700 illustrated in Figure 7 is described in order, it should also be noted that other process sequences, including one or more operations omitted and / or added, and / or rearranged in a different desired order, are within the scope of implementations of the disclosure provided herein.

[0084] In operation 710, a flexible support layer is provided. Referring to Figure 8A, the flexible support layer may be a flexible support layer 210 as described. In operation 720, a release layer is formed on the front side 210f of the flexible support layer 210. The release layer may be a release layer 220 as described. In one or more mounting configurations that can be combined with other mounting configurations, the release layer 220 and the flexible support layer 210 are fabricated in advance. Optionally, in operation 730, one or more fluoropolymer-containing layers (not shown) are formed on or on one surface of the release layer 220. The one or more fluoropolymer layers may be one or more fluoropolymer-containing layers 430, or may include these.

[0085] In operation 740, a monocarbonate (CFx) layer 830 is formed. Referring to Figure 8A, the monocarbonate (CFx) layer 830 is formed on or on one surface of the release layer 220. The monocarbonate (CFx) layer may be formed on or on one or more fluoropolymer layers (if any).

[0086] A carbon monofluoride layer (CFx) can function to enhance the cycle stability of the formed cell. In one or more implementations that can be combined with other implementations, the carbon monofluoride (CFx) layer 830 can decompose into carbon and LiF by reacting with lithium during the first discharge process via the following reaction (CFx + xLi + xe- = C + xLiF). Although not bound by theory, it is thought that the carbon and LiF formed after the first discharge process contribute to the stabilization of the lithium metal battery.

[0087] In another implementation configuration that can be combined with other configurations, at least a portion of the carbon monofluoride (CFx) layer 830 is converted to LiF by a post-deposition treatment process prior to the first discharge process. For example, the post-deposition treatment process may be a post-treatment process as described in operation 350.

[0088] The carbon monofluoride (CFx) layer 830 can be deposited by at least one deposition process selected from the group consisting of immersion, spin coating, dip coating, spray coating, doctor blade coating, solution casting, drop coating, PVD, plasma-enhanced chemical vapor deposition (PECVD), and CVD.

[0089] In one or more implementations that can be combined with other implementations, the carbon monofluoride (CFx) layer 830 is formed by a gas-phase deposition process. In one or more implementations, the gas-phase deposition process is a fluorocarbon plasma deposition process. The fluorocarbon plasma deposition process may be an atmospheric pressure plasma deposition process. The fluorocarbon plasma deposition process can be carried out under atmospheric pressure conditions or near atmospheric pressure conditions. The plasma can be generated using RF frequency power. The frequency of the RF power supply is typically about 13.56 MHz, or about 27 MHz, or about 54 MHz. The frequency of the RF power supply is another variable in generating a plasma source with very high energy density at atmospheric pressure and without plasma arcing. The plasma may be formed in situ or remotely. The plasma may be inductively coupled or capacitively coupled. Those skilled in the art will be able to select different frequencies in light of this disclosure depending on the specific processing apparatus used and the plasma source gas used.

[0090] The plasma deposition process involves generating a fluorocarbon plasma. Fluorocarbon plasma can be generated from fluorocarbon-containing gases, such as one or more perfluorocarbon-containing gases (CxFy). Suitable perfluorocarbon gases include carbon tetrafluoride (CF4), hexafluoroethane (C2F6), hexafluoropropylene (C3F6), perfluorocyclobutane (C4F8), perfluorocyclopentene (C5F8), or combinations thereof.

[0091] The plasma deposition process may further include the introduction of one or more inert gases, such as nitrogen, helium, or argon. The plasma deposition process may further include the introduction of one or more reducing gases. The reducing gases may be selected from ammonia (NH3), hydrazine (N2H4), hydrogen (H2), NF3, atomic hydrogen, their radicals, their derivatives, or combinations thereof. In one example, the one or more reducing gases include hydrogen. In one or more implementations that can be combined with other implementations, the monofluorocarbon (CFx) layer 830 is formed by a capacitively coupled fluorocarbon plasma generated by a 13.56 MHz RF power supply. In one or more implementations that can be combined with other implementations, the monofluorocarbon (CFx) layer 830 is formed by an atmospheric pressure RF plasma using CF4, H2, and He.

[0092] Referring to Figure 8B, in operation 740, one or more interface layers 610 are optionally formed above or on the carbon monofluoride (CFx) layer 830. One or more interface layers 610 may include a first interface layer 610a and a second interface layer 610b as described.

[0093] Referring to Figure 8C, in operation 750, an alkali metal-containing layer is formed above or on top of the interface layer 610. The alkali metal-containing layer may be an alkali metal-containing layer 250 as described. In some configurations, if a second interface layer 610b is present, the alkali metal-containing layer 250 may be formed directly on top of the second interface layer 610b. If interface layers 610a and 610b are not present, the alkali metal-containing layer 250 may be formed directly on top of the carbon monofluoride (CFx) layer 830.

[0094] In one or more implementation configurations that can be combined with other implementation configurations, the energy storage device structure 800 is optionally exposed to a post-treatment process. The post-treatment process can be used to convert at least a portion of the carbon monofluoride (CFx) layer 830 into LiF. The post-treatment process may be a thermal treatment process. The thermal treatment process forms a lithium fluoride layer from the lithium metal of the alkali metal-containing layer 250 and the underlying carbon monofluoride (CFx) layer, for example, the carbon monofluoride (CFx) layer 830. The alkali metal-containing layer 250, the interface layers 610a, 610b (if present), and the carbon monofluoride (CFx) layer 830 (or LiF layer) form a SIDT film stack 855.

[0095] After operation 760 and before operation 770, the device structure 800, including the SIDT film stack 855, can be transferred to a multilayer transfer system, for example, the multilayer transfer system 1000 shown in Figure 10. In some mounting configurations that can be combined with other mounting configurations, a passivation layer can be optionally included in the SIDT film stack 855 as described.

[0096] Referring to Figure 8D, in operation 770, the SIDT film stack 855 is transferred from the flexible support layer 210 to the flexible substrate 260 to form the anode film stack 865. Operation 770 may include lamination transfer onto a current collector to form the anode film stack 865. The lamination transfer process can be carried out in a lamination transfer apparatus, for example, the lamination transfer system 1000 shown in Figure 10. The lamination transfer process may include applying the flexible substrate 260 to the front 250f of the alkali metal-containing layer 250 and removing the flexible support layer 210 and optionally the release layer 220 from the monofluorocarbon (CFx) layer 830 to form the anode film stack 865.

[0097] In one or more mounting configurations that can be combined with other configurations, the release layer 220 is transferred or partially transferred together with the SIDT film stack 855. Alternatively, in other mounting configurations, the release layer 220 remains on or partially on the flexible support layer 210 after operation 770.

[0098] Referring to Figure 8E, in operation 780, the anode film stack 865 can be combined with the separator 290, the cathode stack 285, or both the separator 290 and the cathode stack 285 to form an energy storage device structure 800 as described.

[0099] Figure 9 illustrates a schematic diagram of a flexible substrate coating apparatus 900 for forming at least a portion of a SIDT film stack described according to one or more implementation forms of the present disclosure. The flexible substrate coating apparatus 900 may be a roll-to-roll coating system. The flexible substrate coating apparatus 900 can be used to carry out a portion of Method 100, for example, a portion of the method carried out using vacuum deposition.

[0100] The flexible substrate coating apparatus 900 may be a SMARTWEB® made of Applied Materials, adapted for manufacturing lithium anode devices by the mounting configurations described herein. According to a typical mounting configuration, the flexible substrate coating apparatus 900 can be used to manufacture lithium anodes, particularly for a portion of a SIDT film stack containing lithium anodes. The flexible substrate coating apparatus 900 is constructed as a roll-to-roll system, including a rewind module 902, a processing module 904, and a winding module 906. In one or more mounting configurations, the processing module 904 comprises a plurality of sequentially arranged processing modules or chambers 910, 920, 930, and 940, each configured to perform a single processing operation on a continuous material sheet 950 or material web, e.g., a flexible support layer 210. In one or more mounting configurations, the processing chambers 910-940 are arranged radially around a coating drum 955, as depicted in Figure 9. Other arrangements are contemplated. For example, in another implementation, the processing chamber may be positioned in a linear configuration.

[0101] In one implementation configuration, processing chambers 910-940 are standalone modular processing chambers, and each modular processing chamber is structurally isolated from the other modular processing chambers. Therefore, each standalone modular processing chamber can be positioned, rearranged, replaced, or maintained independently without affecting each other. Although four processing chambers 910-940 are shown, it should be understood that any number of processing chambers may be included in the flexible substrate coating apparatus 900.

[0102] The processing chambers 910-940 may include any suitable structures, configurations, arrangements, and / or components that enable the flexible substrate coating apparatus 900 to deposit a portion of the SIDT film stack according to the implementation of this disclosure. For example, without limitation, the processing chambers may include a suitable deposition system including a coating source, a power supply, separate pressure control, a deposition control system, and temperature control. According to a typical implementation, the chambers are provided with separate gas supply units. The chambers are typically separated from each other to provide good gas separation. The flexible substrate coating apparatus 900 according to the implementation described herein is not limited in terms of the number of deposition chambers. For example, without limitation, the flexible substrate coating apparatus 900 may include 3, 6, or 12 processing chambers.

[0103] The processing chambers 910-940 typically include one or more deposition units 912, 922, 932, and 942. Generally, one or more deposition units as described herein may be selected from the group consisting of CVD sources, ALD sources, PECVD sources, and PVD sources. One or more deposition units may include an evaporation source, a sputtering source, e.g., a magnetron sputtering source, a DC sputtering source, an AC sputtering source, a pulsed sputtering source, a radio frequency (RF) sputtering source, or a medium frequency (MF) sputtering source. One or more deposition units may include an evaporation source. In one configuration, the evaporation source is a thermal evaporation source or an electron beam evaporation source. In one configuration, the evaporation source is a lithium (Li) source. Furthermore, the evaporation source may also be an alloy of two or more metals. The material to be deposited (e.g., lithium) can be supplied into the crucible. Lithium can be evaporated, for example, by thermal evaporation technology or electron beam evaporation technology.

[0104] In some implementations, one or more of the chambers may be configured to carry out deposition by methods such as, but not limited to, chemical vapor deposition, atomic laser deposition, or pulsed laser deposition. In some implementations, one or more of the chambers may be configured to carry out plasma treatment processes such as plasma oxidation or plasma nitriding processes.

[0105] In one or more configurations, processing chambers 910-940 are configured to process both sides of a continuous material sheet 950. The flexible substrate coating apparatus 900 is configured to process a horizontally oriented continuous material sheet 950, but the flexible substrate coating apparatus 900 may also be configured to process substrates positioned in different orientations, for example, the continuous material sheet 950 may be vertically oriented. In one or more configurations, the continuous material sheet 950 is a flexible support layer as described. In one or more configurations, the continuous material sheet 950 includes a PET substrate.

[0106] In one or more configurations, the flexible substrate coating apparatus 900 includes a transfer mechanism 952. The transfer mechanism 952 may include any transfer mechanism that can move a continuous material sheet 950 through the processing areas of the processing chambers 910-940. The transfer mechanism 952 may include a common transport architecture. The common transport architecture may include a reel-to-reel system having a common take-up reel 954 positioned in a winding module 906, a coating drum 955 positioned in a processing module 904, and a supply reel 956 positioned in an unwinding module 902. The take-up reel 954, the coating drum 955, and the supply reel 956 can be heated individually. The take-up reel 954, the coating drum 955, and the supply reel 956 can be heated individually using an internal heat source positioned in each reel, or an external heat source. The common transport architecture may further comprise one or more auxiliary transfer reels 953a, 953b positioned between the take-up reel 954, the coating drum 955, and the supply reel 956. Although the flexible substrate coating apparatus 900 is depicted as having a single processing area, in one or more configurations it may be advantageous to have separate or individual processing areas for each individual processing chamber 910-940. In configurations having individual processing areas, modules, or chambers, the common transport architecture may be a reel-to-reel system in which each chamber or processing area has individual take-up reels and supply reels, as well as one or more optional intermediate transfer reels positioned between the take-up reels and supply reels.

[0107] The flexible substrate coating apparatus 900 may include a supply reel 956 and a take-up reel 954 for moving a continuous material sheet 950 through different processing chambers 910-940. In one configuration, the first processing chamber 910 and the second processing chamber 920 are each configured to deposit one or more of the interface layers 240 of operation 140. The third processing chamber 930 and the fourth processing chamber 940 are configured to deposit a portion of an alkali metal-containing film, such as an alkali metal-containing layer 250. In another configuration where the continuous material sheet 950 is a polymer material, the first processing chamber 910 is configured to deposit a copper film on the polymer material. In one or more configurations, the completed negative electrode can be directed directly toward integration with an anode current collector and / or cathode structure to form an anode device stack or energy storage device, rather than being collected on the take-up reel 954 as shown in the figure.

[0108] In one configuration, processing chambers 930 and 940 are configured to deposit a thin film of lithium metal on a continuous material sheet 950. The thin film of lithium metal can be deposited using any suitable lithium deposition process. The deposition of the thin film of lithium metal may be by a PVD process such as evaporation. The chamber for depositing the thin film of lithium metal may include a PVD system such as an electron beam evaporator, a thermal evaporator, or a lamination system.

[0109] In one configuration, the first processing chamber 910 is configured to deposit a chalcogenide film on a lithium metal film. The chalcogenide film can be deposited using PVD sputtering technology. In one configuration, the fourth processing chamber 940 is configured to form a lithium oxide film or a lithium fluoride film on the chalcogenide film. The thin film of lithium metal can be deposited using any suitable lithium deposition process for depositing a thin film of lithium metal. In one configuration, the evaporation chamber has a processing area that includes an evaporation source which may be located in a crucible, which may be, for example, a thermal evaporator or an electron beam evaporator (cold) in a vacuum environment.

[0110] During operation, a continuous sheet of material 950 is unwound from a supply reel 956, as indicated by the substrate movement direction shown by arrow 908. The continuous sheet of material 950 may be guided by one or more auxiliary transfer reels 953a, 953b. Alternatively, the continuous sheet of material 950 may be guided by one or more substrate guide control units (not shown) that control the proper movement of the flexible substrate, such as by fine-tuning the orientation of the flexible substrate.

[0111] Next, after being unwound from the supply reel 956 and moving over the auxiliary transfer reel 953a, the continuous material sheet 950 is moved through the deposition areas on the coating drum 955, corresponding to the positions of deposition units 912, 922, 932, and 942. During the operation, the coating drum 955 rotates about axis 951 so that the flexible substrate moves in the direction of arrow 908.

[0112] Figure 10 shows a schematic side view of a laminated transfer system 1000 according to one or more implementations of the present disclosure. The laminated transfer system 1000 includes equipment for transferring SIDT film stacks, e.g., SIDT film stacks 255, 455, 655, 855, including a first flexible carrier 1010, e.g., a flexible support layer 210, and a second flexible carrier 1020, e.g., a lithium film on the flexible support layer 210, to each side of a flexible substrate 1030, e.g., a flexible substrate 260, so that the flexible substrate 1030 having the lithium film can be used as an electrode (e.g., an anode) in a lithium-ion battery. The laminated transfer system 1000 includes a calender unit 1040 for transferring the SIDT film stacks on the flexible carriers 1010, 1020 to the flexible substrate 1030.

[0113] The laminated transfer system 1000 includes a first flexible carrier supply hub 1015. A supply roll 1011 of the first flexible carrier 1010 is positioned on the first flexible carrier supply hub 1015. In some embodiments, the first flexible carrier 1010 may be formed from a polymer material such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), metallized plastic, or a combination thereof. A SIDT film stack (not shown in Figure 10) containing a lithium film is positioned below 1010L of the first flexible carrier 1010, so that this lithium film faces the upper surface 1030U of the flexible substrate 1030 as the first flexible carrier 1010 and the flexible substrate 1030 are transported through the calendering unit 1040. This lithium film may become an alkali metal-containing layer 250 after being transferred to the flexible substrate 1030. The upper surface 1030U of the flexible substrate 1030 is on the opposite side from the lower surface 1030L of the flexible substrate 1030. The upper surface 1030U is also called the first surface or first side of the flexible substrate 1030, and the lower surface is also called the second surface or second side of the flexible substrate 1030.

[0114] The laminated transfer system 1000 includes a second flexible carrier supply hub 1025. A supply roll 1021 for the second flexible carrier 1020 is positioned on the second flexible carrier supply hub 1025. In some embodiments, the second flexible carrier 1020 may be formed from the same material as the first flexible carrier 1010 (e.g., PET). A SIDT film stack (not shown in Figure 10) containing a lithium film, for example, one of the SIDT film stacks 255, 455, 655, or 855, is positioned above the second flexible carrier 1020 1020U so that the lithium film faces the lower surface 1030L of the flexible substrate 1030 when the second flexible carrier 1020 and the flexible substrate 1030 are transported through the calendering unit 1040.

[0115] The laminated transfer system 1000 includes a flexible substrate supply hub 1035. A supply roll 1031 for the flexible substrate 1030 is positioned on the flexible substrate supply hub 1035. In some embodiments, the flexible substrate 1030 may be formed from one or more of the following materials: copper, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, metallized plastic, or other materials.

[0116] The laminated transfer system 1000 further includes a calendering unit 1040. The calendering unit 1040 includes a first calendering roller 1041 and a second calendering roller 1042. The first flexible carrier 1010, the second flexible carrier 1020, and the flexible substrate 1030 are arranged to be transported along a path extending between the first calendering roller 1041 and the second calendering roller 1042. The flexible substrate 1030 is positioned between the first flexible carrier 1010 and the second flexible carrier 1020 when the first flexible carrier 1010, the second flexible carrier 1020, and the flexible substrate 1030 are transported between the first calendering roller 1041 and the second calendering roller 1042. The calender rollers 1041 and 1042 apply high pressure to the flexible carriers 1010 and 1020 and the flexible substrate 1030, thereby transferring the SIDT film stacks on each of the flexible carriers 1010 and 1020 to the flexible substrate 1030. In some embodiments, a release layer, such as a release layer 220, is placed on each of the flexible carriers 1010 and 1020 between the corresponding flexible carriers and the SIDT film stacks on these flexible carriers.

[0117] The laminated transfer system 1000 includes a first flexible carrier pickup hub 1016. The pickup roll 1012 of the first flexible carrier 1010 is positioned on the first flexible carrier pickup hub 1016. When the first flexible carrier 1010 is wound onto the first flexible carrier pickup hub 1016, the SIDT film stack that was previously on the first flexible carrier 1010 is transferred onto the flexible substrate 1030 by the calender unit 1040 and is therefore no longer present on the first flexible carrier 1010.

[0118] The laminated transfer system 1000 includes a second flexible carrier pickup hub 1026. The pickup roll 1022 of the second flexible carrier 1020 is positioned on the second flexible carrier pickup hub 1026. When the second flexible carrier 1020 is wound onto the second flexible carrier pickup hub 1026, the SIDT film stack that was previously on the second flexible carrier 1020 is transferred onto the flexible substrate 1030 by the calender unit 1040 and is therefore no longer present on the second flexible carrier 1020.

[0119] The laminated transfer system 1000 includes a flexible substrate pickup hub 1036. The pickup roll 1032 of the flexible substrate 1030 is positioned on the flexible substrate pickup hub 1036. The flexible substrate 1030 includes SIDT film stacks on its upper surface 1030U and lower surface 1030L, respectively. The SIDT film stacks are transferred from the respective flexible carriers 1010 and 1020 onto the flexible substrate 1030 by the calender unit 1040.

[0120] The laminated transfer system 1000 further includes a plurality of rollers 1081-1088. In some embodiments, each of the rollers 1081-1088 may be a passive roller. The rollers 1081-1088 can assist in applying appropriate tension to the flexible carriers 1010, 1020 and the flexible substrate 1030 and in changing their orientation as each of the flexible carriers 1010, 1020 and the flexible substrate 1030 is moved through various parts of the laminated transfer system 1000. Some of the rollers 1081-1088 can also assist in moving the flexible carriers 1010, 1020 closer to or further away from the flexible substrate 1030. For example, the second and third rollers 1082 and 1083 assist in bringing the flexible carriers 1010 and 1020 into contact with the flexible substrate 1030 before they are transported through the calendering unit 1040. Furthermore, the fourth and fifth rollers 1084 and 1085 form points where tension can be applied to the flexible carriers 1010 and 1020, allowing them to be detached from the flexible substrate 1030. In some embodiments, one or more of the rollers 1081 to 1088 may instead be rods, such as metal rods, that can apply tension to the carriers or flexible substrates during their movement.

[0121] The multilayer transfer system 1000 may further include actuators (not shown) configured to rotate each of the hubs 1015, 1016, 1025, 1026, 1035, and 1036, thereby allowing the flexible carriers 1010, 1020 and flexible substrates 1030 to be transported from the corresponding supply hubs 1015, 1025, and 1035 through the calender unit 1040 to the corresponding pick hubs 1016, 1026, and 1036. The multilayer transfer system 1000 may further include one or more actuators (not shown) for rotating the calender rollers 1041 and 1042 of the calender unit 1040. The rotational speed of the actuators can be adjusted to control the speed at which the flexible substrates 1030 and flexible carriers 1010, 1020 are transported through the multilayer transfer system 1000.

[0122] In the laminated transfer system 1000, the flexible substrate 1030 is transported along a path from a supply roll 1031 supported by a supply hub 1035, past a first roller 1081, through the second and third rollers 1082 and 1083, through the calender rollers 1041 and 1042, through the fourth and fifth rollers 1084 and 1085, past an eighth roller 1088, to a pickup roll 1032 around a pickup hub 1036. The pickup hub 1036 is configured to rotate after the flexible substrate 1030 has passed between the first calender roller 1041 and the second calender roller 1042, assisting in the transport of the flexible substrate along the path. Similarly, the pickup hubs 1016, 1026 are configured to rotate and assist in transporting the flexible carrier along the path between the supply hubs 1015, 1025 and the pickup hubs 1016, 1026.

[0123] The stacked transfer system 1000 may also include a controller 1005 for controlling the processes performed by the stacked transfer system 1000. The controller 1005 may be any type of controller used in industrial settings, such as a programmable logic controller (PLC). The controller 1005 includes a processor 1007, memory 1006, and input / output (I / O) circuits 1008. The controller 1005 may further include one or more of the following components (not shown), e.g., one or more power supplies, clocks, communication components (e.g., network interface cards), and user interfaces typically included in controllers of semiconductor devices.

[0124] Memory 1006 may include non-temporary memory. Non-temporary memory can be used to store the programs and settings described below. Memory 1006 may include one or more readily available types of memory, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM)), flash memory, floppy disk, hard disk, or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM)).

[0125] The processor 1007 is configured to execute various programs stored in memory 1006, such as programs configured to perform methods 100, 300, 500, and 700 described. While these programs are being executed, the controller 1005 can communicate with I / O devices via the I / O circuit 1008. For example, while these programs are being executed and communication is taking place via the I / O circuit 1008, the controller 1005 can control outputs (e.g., actuators and calendar units 1040 connected to different hubs). Memory 1006 may further include various operational settings used to control the stacking transfer system 1000. For example, these settings may include speed settings for actuators connected to hubs.

[0126] Certain features of this disclosure (including the operation of the method) are referenced in the summary of the invention, in the modes for carrying out the invention and in the claims, and in the accompanying drawings. It should be understood that the disclosure herein includes all possible combinations of such specific features. For example, if a particular feature is disclosed in the context of a particular aspect, implementation, or example of this disclosure, or in the context of a particular claim, that feature may also be used in general in this disclosure to the extent possible in combination with other particular aspects and implementations of this disclosure and / or in those contexts.

[0127] The described implementation configurations can be carried out using roll-to-roll coating systems such as the TopMet® roll-to-roll web coating system, the SMARTWEB® roll-to-roll web coating system, and the TOPBEAM® roll-to-roll web coating system, all of which are available from Applied Materials, Inc. in Santa Clara, California. Other tools capable of performing high-speed deposition processes can also be adapted to benefit from the described implementation configurations. Furthermore, any system that enables the described deposition process can be advantageously used. The descriptions of the equipment are illustrative and should not be taken as limiting or interpreted as restricting the scope of the described implementation configurations. Although described as a roll-to-roll process, it should also be understood that the described implementation configurations can also be carried out on individual substrates.

[0128] The implementations and all functional operations described herein can be implemented in digital electronic circuits, computer software, firmware, or hardware, or in combination thereof, including the structural means and their structural equivalents disclosed herein. The implementations described herein can be implemented as one or more non-temporary computer program products, i.e., one or more computer programs tangibly embodied in a machine-readable storage device, for execution by a data processing device, such as a programmable processor, a computer, or multiple processors or computers, or for controlling their operation.

[0129] The processes and logic flows described herein can be implemented by one or more programmable processors that execute one or more computer programs that perform their functions by manipulating input data and generating outputs. The processes and logic flows can also be implemented by special-purpose logic circuits, such as FPGAs (Field-Programmable Gate Arrays) or ASICs (Application-Specific Integrated Circuits), or the device can be implemented as such.

[0130] The term “data processing device” exemplifies all devices, machines, and apparatus for processing data, including programmable processors, computers, or multiple processors or computers. In addition to hardware, an apparatus may include code that generates the execution environment for the computer program in question, such as processor firmware, protocol stacks, database management systems, operating systems, or code that constructs one or more of these. A processor suitable for executing a computer program exemplifies both general-purpose and special-purpose microprocessors, as well as any one or more processors in any type of digital computer.

[0131] Suitable computer-readable media for storing computer program instructions and data include, exemplarily, semiconductor memory devices such as EPROMs, EEPROMs, and flash memory devices; magnetic disks such as internal hard disks or removable disks; magneto-optical disks; and CD-ROMs and DVD-ROMs, and all forms of non-volatile memory, media, and memory devices. Processors and memory may be complemented by or incorporated into special-purpose logic circuits.

[0132] In this specification, the term “comprising” and its grammatical equivalents are used to mean the optional presence of other components, ingredients, operations, etc. For example, an article “comprising” (or “which comprises)” components A, B, and C may consist of (i.e., consist only of) components A, B, and C, or may include not only components A, B, and C, but also one or more other components. Furthermore, whenever the transitional phrase “comprising” or its grammatical equivalent precedes a composition, element, or group of elements, it is intended that the transitional phrases “essentially consisting of,” “consisting of,” “selected from a group consisting of,” or “is” may precede the composition, element, or enumeration of elements, and vice versa.

[0133] In this specification, when referring to a method that includes two or more defined operations, the defined operations may be performed in any order or simultaneously (unless the context excludes such possibility), and the method may include one or more other operations performed before any of the defined operations, between two of the defined operations, or after all of the defined operations (unless the context excludes such possibility).

[0134] The foregoing applies to the implementation of the Disclosure, but other and further implementations of the Disclosure can be devised without departing from the basic scope of the Disclosure, and the scope of the Disclosure is determined by the following claims.

Claims

1. A method for fabricating a storage device, Forming an electrolyte-containing layer on top of a release layer placed on top of a flexible support layer, Forming one or more interface layers on a solid electrolyte-containing layer, Evaporating alkali metals onto one or more interface layers, and A release layer, an electrolyte-containing layer, one or more interface layers, and an alkali metal are transferred to a substrate to form an anode film stack. Methods that include...

2. The method according to claim 1, wherein the flexible support layer comprises a material selected from polyethylene terephthalate (PET), paper, and combinations thereof.

3. The method according to claim 1, wherein a solid electrolyte-containing layer is deposited on one surface of the release layer using a non-vacuum coating.

4. The method according to claim 3, wherein one or more interface layers and alkali metals are deposited in a vacuum environment.

5. The method according to claim 1, further comprising transferring a flexible support layer, a release layer, and a solid electrolyte-containing layer to a vacuum environment before forming one or more interface layers.

6. The method according to claim 1, wherein one or more interface layers include an interface dielectric material.

7. The method according to claim 6, wherein the interface dielectric material is selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or a combination thereof.

8. The method according to claim 6, wherein one or more interface layers further include a plating strengthening layer and a stripping strengthening layer.

9. The method according to claim 8, wherein the plating strengthening layer and the stripping strengthening layer are selected from a metal alloy or a chalcogenide.

10. The method according to claim 9, wherein the plating strengthening layer and the stripping strengthening layer include Ag, Bi, Sn, Si; alloys of Ag, Bi, Sn, Si; chalcogenides of Ag, Bi, Sn, Si; or combinations thereof.

11. The method according to claim 10, wherein an electrolyte-containing layer is formed in a first processing chamber, and one or more interface layers and an alkali metal are formed in a second processing chamber.

12. The method according to claim 1, wherein the alkali metal is lithium.

13. The method according to claim 1, wherein the lamination process includes transferring a release layer, an electrolyte-containing layer, one or more interface layers, and an alkali metal to a substrate to form an anode film stack.

14. Alkali metal-containing film stack for energy storage devices, Flexible support layer, A release layer, which can be separated from the flexible support layer, is disposed on one surface of the flexible support layer, An electrolyte-containing layer formed on one surface of the release layer, One or more interface layers on a solid electrolyte-containing layer, Alkali metal-containing layer formed on one or more interface layers and A film stack containing alkali metals.

15. The alkali metal-containing film stack according to claim 14, wherein the flexible support layer comprises a material selected from polyethylene terephthalate (PET), paper, and combinations thereof.

16. The alkali metal-containing film stack according to claim 15, wherein one or more interface layers include an interface dielectric material selected from AlOx, AlOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAlO2, AlF3, BiF3, AgFx, rare earth (RE) nickelate RENiO3, or a combination thereof.

17. The alkali metal-containing film stack according to claim 16, wherein one or more interface layers further comprise a plating strengthening layer and a stripping strengthening layer.

18. The alkali metal-containing film stack according to claim 17, wherein the plating strengthening layer and the stripping strengthening layer are selected from a metal alloy or a chalcogenide.

19. The alkali metal-containing film stack according to claim 18, wherein the plating strengthening layer and the stripping strengthening layer include Ag, Bi, Sn, Si; alloys of Ag, Bi, Sn, Si; chalcogenides of Ag, Bi, Sn, Si; or combinations thereof.

20. A layered transfer system, Layer transfer chamber and System controller, Transporting the film stack from the supply hub to the pickup hub, To bring the film stack into contact with the current collector, Stacking the film stack onto the current collector, and Removing the support layer from the film stack The process is configured to be carried out in a lamination transfer chamber, and the film stack comprises a flexible support layer, a release layer disposed on one side of the flexible support layer and separable from the flexible support layer, an electrolyte-containing layer formed on one side of the release layer, one or more interface layers on the solid electrolyte-containing layer, and an alkali metal-containing layer formed on one side of the one or more interface layers. System controllers and A layered transfer system, including a

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