High-voltage substrate processing equipment

Abstract

The present invention provides a high-pressure substrate processing apparatus comprising: an internal chamber formed to contain a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an external housing containing the internal chamber and an external door formed to be movable between a closed state that closes the external housing and an open state that opens the external housing, and an external chamber formed to contain a protective gas supplied at a second pressure set in relation to the first pressure; a fastening module comprising a support projection installed on the external housing and a locking projection installed on the external door, which in the closed state is positioned corresponding to the support projection by relative rotation with respect to the support projection; a door moving module formed to move the external door between the closed state and the open state; and a control module that calculates a gap section, which is the section in which the locking projection corresponding to the support projection can move between the external housing and the support projection, and controls the door moving module to move the locking projection to a selected position selected within the calculated gap section.

Description

Technical Field

[0001] The present invention relates to a processing apparatus used for processing a substrate in a high-pressure environment.

Background Art

[0002] Generally, various processes are performed on a semiconductor substrate during the progress of a semiconductor device manufacturing process. Examples of such processes include oxidation, nitridation, deposition, and ion implantation. There is also a hydrogen or deuterium heat treatment process for improving the interface characteristics of semiconductor devices.

[0003] The gas used for processing the substrate is supplied to the chamber at high pressure and acts on the semiconductor substrate. In order to maintain the chamber at high pressure, the housing of the chamber must be securely closed by a door.

[0004] For this purpose, a fastening structure is adopted in which a part of the housing and the door correspond to each other and one of them supports the other. When the door droops to one side due to the repeatedly applied high pressure, problems may occur during the fastening and releasing process between the one and the other. For example, particles may be generated due to wear between protrusions during the fastening and releasing process.

[0005] The above-described background art is technical information that the inventor possessed for deriving embodiments of the present invention or acquired during the derivation process, and it cannot necessarily be said to be publicly known technology that was publicly disclosed to the general public before this application.

Summary of the Invention

Problems to be Solved by the Invention

[0006] An object of the present invention is to provide a high-pressure substrate processing apparatus that can prevent particle generation during the fastening and releasing process of the door while reliably maintaining the high pressure in the chamber.

Means for Solving the Problems

[0007] A high-pressure substrate processing apparatus according to one aspect of the present invention for achieving the above objectives may include: an internal chamber formed to contain a substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; an external housing containing the internal chamber and an external door formed to be movable between a closed state that closes the external housing and an open state that opens the external housing, and an external chamber formed to contain a protective gas supplied at a second pressure set in relation to the first pressure; a fastening module comprising a support projection installed on the external housing and a locking projection installed on the external door, which in the closed state is positioned corresponding to the support projection by relative rotation with respect to the support projection; a door moving module formed to move the external door between the closed state and the open state; and a control module that calculates a gap section, which is the section in which the locking projection corresponding to the support projection can move between the external housing and the support projection, and controls the door moving module to move the locking projection to a selected position within the calculated gap section.

[0008] Here, the locking projection can be further rotated relative to the support projection after being moved to the selected position.

[0009] Here, the control module calculates at least one of the lowest and highest points of the gap section, and the control module can set one of the lowest point, the highest point, and a position between the lowest point and the highest point to the selected position.

[0010] Here, the control module can calculate the gap interval based on the operation information of the door movement module.

[0011] Here, the door movement module includes a motor that generates power, and the operation information may include the torque value of the motor.

[0012] Here, the control module can set the point where the fluctuation of the torque value exceeds a standard during the descent of the outer door as the lowest point, and the point where the fluctuation of the torque value exceeds a standard during the rise of the outer door as the highest point, and set the interval between the lowest point and the highest point as the gap interval.

[0013] A high-pressure substrate processing apparatus according to another aspect of the present invention may include a chamber comprising a housing formed to accommodate a substrate to be processed and a process gas supplied at a pressure higher than atmospheric pressure, and a door formed to move up and down between a closed state that closes the housing and an open state that opens the housing; a fastening module comprising a support projection installed on the housing and a locking projection installed on the door, which is positioned corresponding to the support projection by relative rotation with respect to the support projection at an initial level in the closed state; a door lifting module formed to move the door up and down between the closed state and the open state; and a control module that controls the door lifting module so that the locking projection corresponding to the support projection moves up and down to an adjustment level different from the initial level according to the processing stage of the substrate to be processed.

[0014] Here, the control module calculates at least one of the lowest and highest points at which the locking projection can be raised or lowered while positioned corresponding to the support projection, and the adjustment level may be set in relation to at least one of the lowest and highest points.

[0015] Here, the adjustment level may be set to the lowest point before processing the substrate to be processed.

[0016] Here, the adjustment level may be set to a position between the lowest point and the highest point during the switching process between the closed state and the open state.

[0017] Here, the control module can control the door lifting module to lower the door to the open position after moving the locking projection to the adjustment level and the locking projection rotates relative to the support projection.

[0018] Here, the control module can calculate at least one of the minimum point and the maximum point based on the operation information of the door lifting module.

[0019] Here, the process gas includes a reaction gas containing an active gas and a protective gas which is an inert gas, and the housing includes an inner housing formed to house the substrate to be processed and the reaction gas; and an outer housing which houses the inner housing and is coupled to the inner housing to form a closed space for housing the protective gas together with the inner housing, and the door may be formed to close the inner housing. [Effects of the Invention]

[0020] According to the high-pressure substrate processing apparatus of the present invention configured as described above, the door movement module is controlled so that the locking projection of the fastening module that fastens the external housing and the external door moves to a selected position within the gap between the external housing and the support projection of the fastening module. As a result, the high pressure inside the external chamber is reliably maintained by the fastening module, while particle generation due to wear between the locking projection and the support projection during the fastening and unfastening process of the external door can be prevented. [Brief explanation of the drawing]

[0021] [Figure 1] This is a conceptual diagram of a high-voltage substrate processing apparatus 100 according to one embodiment of the present invention. [Figure 2] Figure 1 is an exploded perspective view showing the high-voltage substrate processing apparatus 100 with the external door 125 in the open state, opening the external housing 121. [Figure 3]FIG. 2 is a partial cross-sectional view showing a closed state in which an external door 125 closes an external housing 121 in the high-pressure substrate processing apparatus 100. [Figure 4] FIG. 1 is a block diagram for explaining a control configuration of the high-pressure substrate processing apparatus 100. [Figure 5] FIG. 6 is a flowchart for explaining the operation of the high-pressure substrate processing apparatus 100 according to another embodiment of the present invention. [Figure 6] FIG. 9 is a flowchart for specifically explaining step (S5) in FIG. 5. [Figure 7] FIG. 12 is a flowchart for specifically explaining another step (S7) in FIG. 5. BEST MODE FOR CARRYING OUT THE INVENTION

[0022] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0023] The present invention is not limited to the embodiments disclosed below, and various modifications can be made and it can be realized in various different forms. However, this embodiment is provided to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention. Therefore, the present invention is not limited to the embodiments disclosed below, and it should be understood to include not only the replacement or addition of the configuration of any one embodiment with the configuration of another embodiment, but also all modifications, equivalents, or alternatives included in the technical idea and scope of the present invention.

[0024] The accompanying drawings are only for facilitating the understanding of the embodiments disclosed in this specification, and the technical idea disclosed in this specification is not limited by the accompanying drawings, and it should be understood to include all modifications, equivalents, or alternatives included in the idea and technical scope of the present invention. In the drawings, the components may be exaggeratedly large or small in size or thickness for convenience of understanding, etc., but the protection scope of the present invention should not be construed restrictively thereby.

[0025] The terms used herein are used solely to describe specific examples or embodiments and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. In the specification, terms such as "contains" or "comprise" are intended to indicate the existence of features, figures, stages, operations, components, parts, or combinations thereof described herein. That is, terms such as "contains" or "comprise" in the specification should be understood as not preemptively excluding the possibility of the existence or addition of one or more other features, figures, stages, operations, components, parts, or combinations thereof.

[0026] Terms including ordinal numbers, such as "first," "second," etc., can be used to describe a variety of components, but the components are not limited by such terms. These terms are used solely for the purpose of distinguishing one component from another.

[0027] When it is mentioned that one component is "linked" or "connected" to another component, it should be understood that it may be directly linked or connected to the other component, but there may also be other components in between. Conversely, when it is mentioned that one component is "directly linked" or "directly connected" to another component, it should be understood that there are no other components in between.

[0028] When one component is described as being "above" or "below" another, it should be understood that this means not only that it is positioned directly above the other component, but that there may also be other components in between.

[0029] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as they would be generally understood by a person of ordinary skill in the art to which this invention pertains. Terms that are commonly used and predefined should be interpreted as having the meaning consistent with their meaning in the context of the relevant art, and not as ideal or overly formal unless explicitly defined herein.

[0030] Figure 1 is a conceptual diagram of a high-voltage substrate processing apparatus 100 according to one embodiment of the present invention.

[0031] Referring to this drawing, the high-voltage substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, an air supply module 130, and an exhaust module 140.

[0032] The internal chamber 110 forms a processing space for housing a substrate for processing. The internal chamber 110 may be made of a non-metallic material, such as quartz, to reduce contamination in the high-temperature and high-pressure working environment. The temperature of the internal chamber 110 can reach several hundred to several thousand degrees Celsius by the operation of a heater (not shown) located outside the internal chamber 110. The substrate may be, for example, a semiconductor substrate W mounted on a holder (see Figure 2). The holder may be a wafer boat 113 (see Figure 2) capable of stacking multiple layers of substrates W to be processed. The substrate is not limited to wafers; other basic structures for creating circuits are also possible. For example, the substrate may include glass for display fabrication.

[0033] The external chamber 120 is positioned to house the internal chamber 110. Unlike the internal chamber 110, the external chamber 120 is free from the problem of inducing contamination on the substrate and may therefore be made of metal. The external chamber 120 has a hollow shape with an internal space that houses the internal chamber 110.

[0034] The air supply module 130 is configured to supply gas to the internal chamber 110 and the external chamber 120. The air supply module 130 has a gas supply unit 131 which serves as the gas source. The gas supply unit 131 can selectively supply the internal chamber 110 with gases such as hydrogen gas (H2), deuterium gas (D2), fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc., as reaction gases for heat treatment. The gas supply unit 131 can supply the external chamber 120 with a protective gas, such as an inert gas like nitrogen gas or argon gas (Ar). The reaction gases and protective gases may also be simply called process gases. The process gases are supplied to the internal chamber 110 or the external chamber 120 via the reaction gas line 133 or the protective gas line 135, respectively. The protective gas supplied to the external chamber 120 is specifically supplied to the space between the external chamber 120 and the internal chamber 110 (protective space).

[0035] The process gas may be supplied to form a pressure higher than atmospheric pressure (high pressure), for example, a pressure reaching several to tens of atmospheres. When the pressure of the reaction gas is the first pressure and the pressure of the protective gas is the second pressure, they can be maintained in a set relationship. For example, the second pressure may be set to be slightly higher than the first pressure. Such a pressure difference has the advantage of preventing the reaction gas from leaking from the internal chamber 110. The protective space is specifically the area of ​​the internal space excluding the space occupied by the internal chamber 110.

[0036] The exhaust module 140 is configured for exhausting the process gas. An exhaust pipe 141 is connected to the top of the internal chamber 110 to exhaust the reaction gas from the internal chamber 110. Similarly, an exhaust pipe 145 communicating with the external chamber 120 may be provided to exhaust the protective gas from the external chamber 120. Since these exhaust pipes 141 and 145 are integrated into one, the reaction gas is diluted with the protective gas during the exhaust process, resulting in a lower concentration.

[0037] The fastening structure of the external chamber 120 will be explained with reference to Figures 2 and 3. Figure 2 is an exploded perspective view showing the open state in which the external door 125 opens the external housing 121 in the high-voltage substrate processing apparatus 100 of Figure 1, and Figure 3 is a partial cross-sectional view showing the closed state in which the external door 125 closes the external housing 121 in the high-voltage substrate processing apparatus 100 of Figure 2.

[0038] Referring to this drawing, the internal chamber 110 includes an internal housing (not shown) and an internal door 115. The internal housing forms the processing space for accommodating the substrate W to be processed, and its lower part is open. The internal door 115 closes the open lower part of the internal housing. The internal door 115 may have the shape of a feed trough that is open downwards overall. When the internal door 115 is lowered, the processing space is opened (open state, see Figure 2). When the internal door 115 is raised, the processing space is closed (closed state, see Figure 3). The semiconductor substrate W can be loaded onto the wafer boat 113 and placed into the internal chamber 110 in the open state.

[0039] The external chamber 120 also includes an external housing 121 and an external door 125. The external housing 121 is sized to accommodate the internal chamber 110. An internal housing (not shown) is installed in the external housing 121. The external housing 121 can be opened and closed by moving the external door 125. The external door 125 is connected to the internal door 115 by a support member 127 and can support the internal door 115. In this case, the external door 125 opens and closes the external housing 121 while moving (raising and lowering) together with the internal door 115.

[0040] The high-pressure substrate processing apparatus 100 may further include a fastening module 150 for fastening the outer housing 121 and the outer door 125 in the closed state. Since the inner door 115 is supported by the outer door 125 by a support member 127, the fastening module 150 may also ensure that the inner door 115 is in close contact with the inner housing. The fastening module 150 ensures that the protective gas in the outer chamber 120 is maintained at the second pressure. The fastening module 150 also exerts a fastening force so that the reaction gas in the inner chamber 110 is maintained at the first pressure.

[0041] The fastening module 150 may specifically include a rotating ring 151, a support projection 153, and a locking projection 155.

[0042] The rotating ring 151 is a ring mounted on the outer housing 121 and is positioned to rotate around the center of the outer housing 121. Specifically, a ring-shaped guide groove 123 is formed on the outer surface of the outer housing 121. The rotating ring 151 is inserted into the guide groove 123 and can rotate around the outer housing 121 according to its guidance. The force for the rotation of the rotating ring 151 can be provided by a drive wheel (not shown) that is in contact with the rotating ring 151.

[0043] The support projection 153 is a projection installed on the external housing 121. The support projection 153 may be installed on the external housing 121 via the rotating ring 151, as in this embodiment. Multiple support projections 153 may be arranged on the inner circumferential surface of the rotating ring 151.

[0044] The locking projection 155 is installed on the exterior door 125. The locking projection 155 is sized to pass between a pair of adjacent support projections 153 when the exterior door 125 moves in the vertical direction (E). The number of locking projections 155 may be the same as the number of support projections 153.

[0045] When the external door 125 rises and enters the closed position, the rotating ring 151 rotates, causing the locking projection 155 to rotate relative to the support projection 153. In this case, the locking projection 155 is positioned above the support projection 153.

[0046] The locking projection 155 can also move in a fine range along the vertical direction (E) between the bottom surface 121' of the outer housing 121 and the top surface 153' of the support projection 153. The range in which the locking projection 155 can move between the bottom surface 121' and the top surface 153' is referred to as the play section.

[0047] In the above explanation, the rotation of the rotating ring 151 causes the support projection 153 to rotate relative to the locking projection 155. However, the support projection 153 can also be fixed, allowing the locking projection 155 to rotate. For this purpose, the outer door 125 may be rotated entirely or partially.

[0048] The control configuration of the high-voltage substrate processing apparatus 100 will be explained with reference to Figure 4. Figure 4 is a block diagram illustrating the control configuration of the high-voltage substrate processing apparatus 100 shown in Figure 1.

[0049] Referring to these drawings (and Figures 1 to 3), the high-voltage substrate processing apparatus 100 may further include, in addition to the aforementioned air supply module 130 and exhaust module 140, a heating module 160, a door movement module 170, a sensing module 180, a control module 190, and a storage module 195.

[0050] The heating module 160 includes the aforementioned heater. The heater can be classified as part of the second chamber 120 or as a separate component of the heating module 160. The heater is positioned within the second chamber 120 so as to face the first chamber 110.

[0051] The door movement module 170 is configured to move the external door 125 between the closed state and the open state. For this purpose, the door movement module 170 may have an arm (not shown) that supports the external door 125 and a drive unit (not shown) that drives the arm. The drive unit may have a motor (not shown) that generates power to drive the arm along the vertical direction (E, see Figure 2). Since the door movement module 170 raises and lowers the external door 125 along the vertical direction (E), it can also be called a door lifting module.

[0052] The sensing module 180 is configured to sense the environment of chambers 110 and 120. The sensing module 180 may include a pressure gauge 181 and a temperature gauge 185. The pressure gauge 181 and temperature gauge 185 may be installed in each of the chambers 110 and 120.

[0053] The control module 190 is configured to control the air supply module 130 and the exhaust module 140, among others. The control module 190 can control the air supply module 130 and the other modules based on the sensing results of the sensing module 180.

[0054] The storage module 195 is configured to store data, programs, and the like that the control module 190 can refer to for control purposes.

[0055] With this configuration, the control module 190 can control the operation of the air supply module 130 based on the pressures in chambers 110 and 120 obtained by the pressure gauge 181. Upon operation of the air supply module 130, the reaction gas fills the processing space at the first pressure. The protective space is filled with the protective gas at the second pressure.

[0056] The control module 190 can also control the operation of the exhaust module 140 based on the pressures in chambers 110 and 120 obtained by the pressure gauge 181. The operation of the exhaust module 140 allows the reaction gas to be exhausted from the processing space. The protective gas can be exhausted from the protective space.

[0057] The control module 190 can control the operation of the heating module 160 based on the temperatures of chambers 110 and 120 obtained by the temperature gauge 185. The operation of the heating module 160 allows the reaction gas to reach the reaction temperature.

[0058] The control module 190 can also control the door movement module 170 to move the outer door 125 to a specific position within the gap. Moving the outer door 125 to a specific position within the gap prevents wear between the support projection 153 and the locking projection 155 that would be induced by the sagging of the arm.

[0059] A specific control method for preventing wear between the support projection 153 and the locking projection 155 will be explained with reference to Figures 5 to 7.

[0060] Figure 5 is a flowchart illustrating the operation of the high-voltage substrate processing apparatus 100 according to another embodiment of the present invention.

[0061] Referring to this drawing (and Figures 1 to 4), the control module 190 controls the door movement module 170 to raise the outer door 125. This causes the outer door 125, specifically the locking projection 155, to stop between the level corresponding to the upper surface 153' and the level corresponding to the lower surface 121' (initial level). The control module 190 can slow down the speed of the door movement module 170 depending on how close the outer door 125 is to the outer housing 121. The initial level may be the level set when the door movement module 170 was installed. By being at the initial level, the outer door 125 is in the closed state (S1).

[0062] The control module 190 acts on the rotating ring 151 to rotate the support projection 153. As a result, the locking projection 155 is positioned to partially or completely correspond to the support projection 153 (S3).

[0063] With the locking projection 155 positioned above the support projection 153, the control module 190 calculates the gap (S5). To do this, the control module 190 operates the door movement module 170 to raise and lower the outer door 125. This will be explained with reference to Figure 6.

[0064] Referring again to Figure 5, the control module 190 moves the outer door 125 to a selected position within the gap (selected position) based on the calculated gap (S7). At the selected position, the rotating ring 151 rotates further, allowing the locking projection 155 to move relative to the support projection 153 from a position where it partially corresponds to the support projection 153 to a position where it fully corresponds to it. The selected position may be a position chosen to prevent sagging of the outer door 125 and further wear against the support projection 153. This will be explained with reference to Figure 7.

[0065] Figure 6 is a flowchart that provides a detailed explanation of the first step (S5) in Figure 5.

[0066] Referring further to this drawing, the control module 190 can calculate the gap interval based on the operating information of the door movement module 170. The operating information may be the torque value of the motor of the door movement module 170. This will be explained in detail as follows.

[0067] First, the control module 190 causes the door movement module 170 to move downward (S11).

[0068] As the door movement module 170 moves downward, the outer door 125 descends and stops on the upper surface 153' of the support projection 153. The motor of the door movement module 170 is subjected to a higher load than when the outer door 125 is moving. As a result, the torque value of the motor exceeds the reference value (S13).

[0069] The control module 190 stops the downward movement of the door movement module 170 (S15). The control module 190 sets the level at which the operation of the door movement module 170 stops as the lowest point of the gap section (S17).

[0070] The control module 190 then causes the door movement module 170 to move upward (S19).

[0071] The external door 125 rises and stops against the lower surface 121' of the external housing 121. As a result, the torque value of the motor exceeds the reference value (S21).

[0072] The control module 190 stops the upward movement of the door movement module 170 (S23) and sets the level at which the door movement module 170 stops as the highest point of the gap section (S25).

[0073] In contrast to the above, the control module 190 can also calculate the highest point first and then the lowest point. The control module 190 can also calculate only one of the lowest point or the highest point.

[0074] Figure 7 is a flowchart that provides a more detailed explanation of the other step (S7) in Figure 5.

[0075] Referring further to this drawing, the control module 190 can control the door movement module 170 so that the external door 125 is adjusted to a different level (adjustment level) from the initial level according to the processing stage of the substrate W to be processed. The adjustment level may be one of the selected positions described above. The adjustment level may be the lowest point or the highest point, or one position (level) between them. A more detailed explanation of this is as follows.

[0076] First, the control module 190 determines the processing stage for the substrate W to be processed. Before processing (oxidation, deposition, heat treatment, etc.) on the substrate W begins (S31), the control module 190 moves the external door 125 to the lowest point (first adjustment level) (S33). Specifically, the control module 190 lowers the door movement module 170 so that the locking projection 155 is supported by the upper surface 153' of the support projection 153. Even if the process gas acts as a pressure higher than atmospheric pressure during the processing, the arm does not deform. As a result, the external door 125 supported by the arm can maintain a horizontal position without sagging to one side. This is because the external door 125, specifically the locking projection 155, is supported by the support projection 153.

[0077] When the external door 125 is switched from the closed state to the open state (S35), the control module 190 moves the external door 125 to a point (second adjustment level) between the lowest point and the highest point. The second adjustment level may be an intermediate level between the lowest point and the highest point. If the control module 190 has only calculated the lowest point or the highest point, the second adjustment level may be the lowest point or a level with a certain interval added to or subtracted from the lowest point level. In order to move to the second adjustment level, the control module 190 must operate the door movement module 170 upward. In this state, the locking projection 155 rotates relative to the support projection 153 and is positioned offset from the support projection 153. Whether or not the external door 125 is sagging, or even if it is sagging, the locking projection 155 rotates relative to the support projection 153 while remaining separated from it, so particle generation due to wear between the support projection 153 and the locking projection 155 during relative rotation can also be prevented. Next, the control module 190 will move the door movement module 170 downward so that the outer door 125 reaches the open state.

[0078] In this specification, a high-pressure substrate processing apparatus 100 has been described using a processing apparatus having a double chamber as an example, but the present invention is not limited thereto. A processing apparatus having a single chamber also falls within the scope of the present invention. The single chamber consists of one housing and one door. A wafer substrate is placed inside the chamber, and a gas for processing the wafer substrate is supplied. The fastening module 150 and the control module 190, etc., can be applied as is to such a single chamber as well.

[0079] The configuration of the fastening module 150 and the like can also be applied to a semi-double chamber, which is an intermediate form between the double chamber and the single chamber. The semi-double chamber may have two housings {an inner housing and an outer housing} and one door. The two housings may correspond to the inner housing 111 and outer housing 121 of the above-described embodiment. The two housings may be joined by their own shape or with the intervention of other members to form a closed space (corresponding to the above-described protective space). Similar to the above-described embodiment, the substrate may be placed in the processing space of the inner housing, the reaction gas may be injected, and the protective gas may be injected into the closed space. Unlike the above-described embodiment, the door cannot be protected by the protective gas.

[0080] The door may correspond to the external door 125 in the previously described embodiment. The door can open and close the internal housing (and the external housing). A fastening module 150 {and a control module 190, etc.} as in the previously described embodiment is used for operation between the external housing and the door.

[0081] While this specification illustrates batch-type processing equipment, the present invention is not limited thereto. The present invention can also be directly applied to single-wafer type processing equipment. [Industrial applicability]

[0082] This invention has industrial applicability in the field of manufacturing high-voltage substrate processing equipment.

Claims

1. An internal chamber formed to contain the substrate to be processed and a reaction gas supplied at a first pressure higher than atmospheric pressure; An external housing for housing the internal chamber, and an external door formed to be movable between a closed state that closes the external housing and an open state that opens the external housing, the external chamber being formed to contain a protective gas supplied at a second pressure set in relation to the first pressure; A fastening module comprising a support projection installed on the external housing and a locking projection installed on the external door, which, in the closed state, is positioned corresponding to the support projection by relative rotation with respect to the support projection; A door movement module formed to move the external door between the closed state and the open state; and A high-voltage substrate processing apparatus, comprising a control module that calculates a gap section, which is the section in which the locking projection corresponding to the support projection can move between the external housing and the support projection, and controls the door movement module to move the locking projection to a selected position selected within the calculated gap section.

2. The high-voltage substrate processing apparatus according to claim 1, wherein the locking projection is further rotated relative to the support projection after being moved to the selected position.

3. The control module is Calculate at least one of the lowest and highest points of the aforementioned gap section. The control module is The high-voltage substrate processing apparatus according to claim 1, wherein one of the lowest point, the highest point, and a position between the lowest point and the highest point is set as the selected position.

4. The control module is The high-voltage substrate processing apparatus according to claim 1, which calculates the gap section based on the operation information of the door movement module.

5. The aforementioned door moving module is Includes a motor that generates power, The aforementioned operational information is, The high-voltage substrate processing apparatus according to claim 4, including the torque value of the motor.

6. The control module is The high-voltage substrate processing apparatus according to claim 5, wherein the point at which the fluctuation of the torque value exceeds a standard during the descent of the external door is set as the lowest point, the point at which the fluctuation of the torque value exceeds a standard during the rise of the external door is set as the highest point, and the interval between the lowest point and the highest point is set as the gap interval.

7. A chamber comprising a housing formed to accommodate a substrate to be processed and a process gas supplied at a pressure higher than atmospheric pressure, and a door formed to move up and down between a closed state that closes the housing and an open state that opens the housing; A fastening module comprising a support projection installed on the housing and a locking projection installed on the door, which is positioned corresponding to the support projection by relative rotation with respect to the support projection at the initial closed state; A door lifting module formed to raise and lower the door between the closed state and the open state; and A high-voltage substrate processing apparatus, including a control module that controls the door lifting module so that the locking projection corresponding to the support projection rises and falls to an adjustment level different from the initial level according to the processing stage of the substrate to be processed.

8. The control module is Calculate at least one of the lowest and highest points at which the locking projection can move up and down while it is positioned corresponding to the support projection. The aforementioned adjustment level is, The high-voltage substrate processing apparatus according to claim 7, which is set in relation to at least one of the minimum point and the maximum point.

9. The aforementioned adjustment level is, The high-voltage substrate processing apparatus according to claim 7, wherein the lowest point is set before processing the substrate to be processed.

10. The aforementioned adjustment level is, The high-voltage substrate processing apparatus according to claim 7, wherein the position is set between the lowest point and the highest point during the switching process between the closed state and the open state.

11. The control module is The high-voltage substrate processing apparatus according to claim 10, wherein, after moving the locking projection to the adjustment level, the door lifting module is controlled to lower the door to the open position when the locking projection rotates relative to the support projection.

12. The control module is The high-voltage substrate processing apparatus according to claim 8, which calculates at least one of the lowest point and the highest point based on the operation information of the door lifting module.

13. The aforementioned process gas is It includes a reaction gas containing an active gas and a protective gas which is an inert gas. The aforementioned housing is An internal housing formed to accommodate the substrate to be processed and the reaction gas; and Includes an external housing that houses the internal housing and is coupled to the internal housing to form a closed space for containing the protective gas together with the internal housing, The aforementioned door is The high-voltage substrate processing apparatus according to claim 7, which is formed to close the internal housing.

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