Power semiconductor module, terminal structure, and method

Abstract

The present invention relates to a power semiconductor module (1). The power semiconductor module (1) comprises a module housing (10) and a substrate structure (20) including at least one metallized layer (22, 23) and at least one power semiconductor element (24) electrically connected to the at least one metallized layer (22, 23), wherein the substrate structure (20) is mounted in the module housing (10) to house the power semiconductor element (24). The power semiconductor module (1) also comprises a terminal structure (40), which is electrically connected to the substrate structure (20) and configured to provide an external electrical interface (2, 4) of the power semiconductor module (1) for transmitting main power and / or control signals to the substrate structure (20). The terminal structure (40) has at least one electrical conductor (42, 44) formed by a primary molding process.

Description

Technical Field

[0001] Technical Field The present invention relates to a power semiconductor module having a terminal structure configured to provide an external electrical interface for transmitting main power and / or control signals. The present invention also relates to a terminal structure for a power semiconductor module. Further, the present invention relates to a method of manufacturing a power semiconductor module.

Background Art

[0002] Background Art Power semiconductor modules typically include a terminal structure that provides an external electrical interface for transmitting electricity and / or signals. The terminal structure typically includes conductive components connected to the power semiconductor elements of the power semiconductor module at an end remote from the corresponding external electrical interface.

[0003] For example, it is beneficial to make improvements to the terminal structure when there are few terminal structures required for cost-effective small-scale production or when improving electrical and / or thermal characteristics.

[0004] US2022 / 0310409A1 describes a power semiconductor module having a terminal structure configured to provide an external electrical interface.

Summary of the Invention

Problems to be Solved by the Invention

[0005] Summary of the Invention Therefore, an object of the present invention is to provide a solution relating to a power module with improved electrical and / or thermal characteristics and / or manufacturing. In particular, it is an object to avoid or reduce the disadvantages of known solutions.

Means for Solving the Problems

[0006] The object of the present invention is achieved by the features of the independent claims. Preferred embodiments are described in detail in the dependent claims, specification and drawings.

[0007] Therefore, the object of the present invention is achieved in particular by the following power semiconductor module. The power semiconductor module comprises a module housing and a substrate structure including at least one metallized layer and at least one power semiconductor element, e.g., a chip. The power semiconductor element is electrically, in particular mechanically, connected to at least one metallized layer, and the substrate structure is mounted on the module housing to accommodate the power semiconductor element. The power semiconductor module also comprises a terminal structure electrically connected to the substrate structure and configured to provide an external electrical interface for the power semiconductor module to transmit main power and / or control signals to the substrate structure. In particular, the terminal structure has at least one electrical conductor formed by a primary molding process.

[0008] Furthermore, an object of the present invention is achieved by the terminal structure for a power semiconductor module described herein and / or by the terminal structure for a power semiconductor module. The terminal structure is configured for a power semiconductor module, the power semiconductor module comprises a substrate structure including at least one metallized layer and at least one power semiconductor element. The substrate structure is mounted in a module housing to accommodate the power semiconductor element. The terminal structure includes an external electrical interface for transmitting main power and / or control signals to the substrate structure. In particular, the terminal structure is configured to be electrically connected to the substrate structure and to provide an external electrical interface, and in particular the terminal structure has at least one electrical conductor formed by a primary molding process, e.g., casting, injection molding, sintering and / or additive manufacturing.

[0009] Furthermore, an object of the present invention is achieved by a method for manufacturing a power semiconductor module. This method includes the steps of providing a substrate structure having at least one power semiconductor element, providing a module housing attached to the substrate structure and configured to house at least one power semiconductor element, and manufacturing a terminal structure having at least one electrical conductor, electrically connected to at least one power semiconductor element, and configured to provide an external electrical interface for transmitting main power and / or control signals to the substrate structure. The manufacturing step includes shaping a conductive material by a primary molding process, such as casting, injection molding, sintering and / or additive manufacturing.

[0010] In other words, the present invention proposes a power semiconductor module including a housing and a substrate structure. The substrate structure has a chip connected to a metal layer, which is substantially housed by the housing. The power semiconductor module also has at least one external electrical interface, for example, an electrical connector, which is for transmitting power and / or control signals to the environment and / or a specific application, and is electrically connected to the substrate structure, particularly the chip, and is typically external to the power semiconductor module, for example, accessible from / on the housing. The external electrical interface is formed of an electrical conductor, such as a metal component. The external electrical interface may be a separate component attached to the electrical conductor, or it may be formed by the electrical conductor itself. It has been proposed to manufacture the external electrical interface and / or electrical conductor by a primary forming process such as casting and / or molding and / or forming. Furthermore, for example, the present invention proposes a corresponding electrical conductor. Furthermore, for example, the present invention proposes a corresponding manufacturing method relating to a power semiconductor module.

[0011] The present invention and the embodiments described in this application provide an improved power semiconductor module that is easier to manufacture.

[0012] The present invention enhances production flexibility, particularly when lot sizes are relatively small. The present invention reduces production costs due to lower mold costs compared to known solutions for terminal structures typically made from punched and bent metal sheets. Furthermore, it increases the flexibility in shaping the terminal structure, especially the flexibility of the electrical conductors that form and / or provide the external electrical interface.

[0013] This invention provides that metal forming / bending of terminal structures, such as punching and / or bending of metal sheets, can be at least partially or completely replaced by primary forming processes such as metal casting or sintering or 3D printing. While the mold costs for metal forming / bending processes, such as punching and / or bending, are typically higher than those for primary forming processes, the cost per terminal structure becomes lower for metal forming / bending only when production volume is high. Therefore, when using primary forming processes, the mold costs for manufacturing terminal structures can be reduced. This allows for the production of products that were previously economically unfeasible, i.e., products with low production volumes or prototypes.

[0014] Furthermore, the present invention can reduce heat loss because complex and individual shapes can be formed by a primary molding process. For example, complex terminal structures with complex shapes, particularly auxiliary terminals for transmitting control signals, can be manufactured as a single unit to improve electromagnetic behavior. Current bottlenecks due to ohmic losses can be avoided or at least significantly reduced by locally thickened structures that can be easily realized using a primary molding process.

[0015] Furthermore, the present invention typically provides an increase in the surface area of ​​the terminal structure at a microscale compared to prior art solutions. For example, by increasing the surface roughness, e.g., the roughness value Ra, the surface area in contact with air can be enlarged. This can enhance the convective cooling function. In addition, the heat flow within the terminal structure can be enhanced. For example, heat dissipation or electrical resistance can be improved, compensating for the disadvantage of sintered materials having lower thermal and electrical conductivity compared to bulk or sheet materials.

[0016] Furthermore, the shape of the terminal structure can be further optimized for electrical flow, reducing weight and material costs. This weight reduction is beneficial for both post-manufacturing transportation and the use of the module in any mobile applications.

[0017] Further advantageous embodiments of the present invention are provided below. The features described in the embodiments can be combined with each other or applied individually. These features can also be applied to methods and / or power semiconductor modules.

[0018] At least one metallized layer refers to a layer or film formed by depositing a metallic material or a metallic alloy material onto a substrate, such as an insulating layer or other layer or other substrate. The at least one metallized layer is configured for purposes such as providing conductivity, bonding, and / or other functional properties. Common methods for forming, in particular, depositing, the at least one metallized layer may include coating processes, lamination processes, and / or brazing processes. The choice of deposition method may affect the thickness, uniformity, grain structure, and other properties of the at least one metallized layer.

[0019] A terminal structure typically refers to a configuration containing at least one electrical conductor, and in most cases, a configuration containing multiple electrical conductors. Typically, a terminal structure includes all electrical conductors of a power semiconductor module configured to provide an external electrical interface. Therefore, two electrical conductors are included in a “terminal structure” even if they are located far apart from each other. In other words, a terminal structure can contain one electrical conductor or two or more electrical conductors. A terminal structure may contain multiple (e.g., two or more) electrical conductors. In this case, not necessarily all electrical conductors, but only one or more electrical conductors, are formed by the primary molding process.

[0020] An electrical conductor is a component configured to conduct electric current and / or electricity. An electrical conductor may contain, or be composed of, conductive materials, particularly materials other than metals, such as carbon or conductive polymers, including graphite. An electrical conductor may be a metal component, wire, cable, etc. Because an electrical conductor is solid and / or rigid, it may also be a structural element.

[0021] The terminal structure provides at least one external electrical interface. The terminal structure may provide the external electrical interface monolithically, for example, as a section, part, or region of the terminal structure. Alternatively or additionally, the terminal structure may provide the external electrical interface as a component of the terminal structure, in particular as a component conductively attached to an electrical conductor. In other words, the external electrical interface and the electrical conductor may be an integrated component or may be separate components connected to each other.

[0022] At least one external electrical interface can be used to transmit power, for example, large currents exceeding approximately 10A, 50A, 100A, or 500A. Therefore, the terminal structure is typically configured to accommodate such large currents by at least one electrical conductor of appropriate size. At least one external electrical interface can also be used to transmit control signals, for example, small currents less than 1A or 10A. The control signals may be configured to control power semiconductor elements. For example, the external electrical interface may include electrical connection means, such as connectors, screws, bolts, threads, etc. For example, the external electrical interface may include elements to facilitate connection to, for example, an external busbar.

[0023] The primary molding process used in the present invention preferably refers to a manufacturing process in accordance with “Manufacturing processes - Terms and definitions, section” as described in DIN 8580:2022-12-00. In a primary molding process, for example, a solid is produced from an amorphous material by generating cohesive forces. In this case, the properties of the workpiece material are determinable. Therefore, for example, sintering, casting, or additive manufacturing are understood as primary molding processes. In particular, manufacturing is carried out using a primary molding tool that provides the shape of a terminal structure in its internal space, by corresponding internal cavities, especially by at least one electrical conductor.

[0024] The sintering of at least one electrical conductor can be carried out at a sintering temperature of at least 200°C, and in particular at at least 260°C. In particular, sintering can be carried out at at least 300°C and / or up to 1400°C. For example, copper or copper alloys can be sintered at at least 900°C and / or up to 1200°C, and in particular at at least 1000°C and / or up to 1080°C. For example, aluminum or aluminum alloys can be sintered at at least 400°C and / or up to 650°C, and in particular at at least 500°C or at least 550°C and / or up to 620°C. After sintering, the at least one electrical conductor and / or terminal structure can be cooled in particular to room temperature.

[0025] Sintering of at least one electrical conductor can be carried out using particles suitable for sintering, particularly particles containing metal particles, particularly particles having an average particle size in the range of 1 to 10 μm, or particles exceeding 10 μm or 100 μm. The particles suitable for sintering may further include nanoparticles. The nanoparticles may preferably contain a metal similar to or identical to the metal particles, or may be composed of a metal. The nanoparticles may include particles having an average particle size less than 1 μm or less than 0.1 μm (i.e., less than 1000 nm or less than 100 nm). The nanoparticles can improve electrical or thermal properties by increasing density or reducing porosity. The nanoparticles may be arranged in a specific region of the formed terminal structure, for example, in the vicinity of the contact surface provided by the terminal structure and / or the external electrical interface. The nanoparticles may be arbitrarily dispersed within the terminal structure, for example, filling voids formed by other particles of a larger size, such as particles suitable for sintering, particularly metal particles.

[0026] Sintering by a single forming process is different from joining processes known as silver or copper sintering. For example, a power semiconductor device can be mechanically connected to a substrate structure by a soldering process, an adhesive process, or a silver or copper sintering process. Soldering, adhesion, or silver / copper sintering is performed to electrically connect a terminal structure to a substrate structure and includes mechanical joining. Silver sintering includes depositing a layer consisting of micron or submicron-sized metal particles on a bonding region of the substrate structure and / or any other interface, placing the parts to be silver-sintered on the layer consisting of metal particles, and sintering the parts and mating parts together with the bonding region and / or other interfaces, especially by applying heat and pressure to the layer. In this case, heat and pressure can be applied by a fluid, especially a liquid, or by a tool. The silver sintering process typically includes a specific pressure (e.g., a pressure exceeding 10 MPa. However, in some cases, pressureless sintering is also possible) and / or a specific processing temperature (about 200 - 350 °C). Typically, the silver sintering process is continuously performed using a hydraulic press device with an integral heating plate (also called a hot press device), or is performed in a batch process using a pressurized and heated oil bath. Therefore, silver sintering typically cannot provide a single forming tool having the shape of a terminal structure, but can be regarded as something similar to or an alternative to soldering or adhesion.

[0027] Casting or forming of at least one electrical conductor can be performed at a temperature at least equal to the melting temperature of the material being cast or formed. For example, in the case of aluminum or an aluminum alloy, casting can be performed at a temperature of at least 660 °C. For example, in the case of copper or a copper alloy, casting can be performed at a temperature of at least 1085 °C. After casting, at least one electrical conductor and / or terminal structure can be cooled, especially to room temperature.

[0028] According to DIN8580, a single forming process means a manufacturing process within main group 1 titled "Single Forming Process" in Germany.

[0029] Additive manufacturing is understood as a primary molding process according to the classification of subgroup 1.10 described in DIN 8580:2022-12-00. Subgroup 1.10 also refers to “Additive manufacturing - General principles - Fundamentals and terminology” described in DIN EN ISO / ASTM 52900:2022-03.

[0030] The substrate structure may have a plate-like and / or substantially flat shape. The substrate structure may have a top surface and, in particular, a bottom surface on the side opposite to the top surface and / or away from the top surface.

[0031] The substrate structure may have at least one metallized layer, particularly an upper metallized layer located on the upper surface. The substrate structure may have at least one metallized layer, particularly a bottom metallized layer located on the bottom surface. The at least one metallized layer may contain two or more metallized layers.

[0032] The power semiconductor element may be arranged on, for example, at least one metallized layer soldered to the top surface, and may be connected in particular electrically and mechanically.

[0033] A power semiconductor module is a power module installed in vehicles such as hybrid cars or plug-in electric vehicles, or trains such as commuter trains, that converts direct current from a battery into alternating current for an electric motor. Alternatively or additionally, power semiconductor modules are configured to change the voltage and / or current frequency for optimal motor operation.

[0034] The module housing may have, at least substantially, an internal space for housing power semiconductor elements, and / or may form at least substantially an internal space for housing power semiconductor elements. The module housing may have at least one side wall and / or a top cover. The four side walls may form a square, a cube, and / or a rectangle, and the top cover may close the open side. The cover and side walls may be a single integrated part or different parts joined together. The module housing may have a pot shape that is closed by a substrate structure. The top cover is positioned opposite the substrate structure. This allows for the formation of a top surface and / or a closable space for power semiconductor elements. This space may be filled with a sealant such as a dielectric gel or potting resin. Alternatively or additionally, the module housing may be formed from a solid manufactured, for example, by injection molding or transfer molding. Once the substrate structure is positioned and / or fixed to the module housing facing the top surface of the module housing, the power semiconductor elements are housed, in particular, positioned and / or protected within the module housing.

[0035] "Plate-like" means that the shape is flat and / or extends at least substantially along two of the three dimensions. A plate may be flat in one direction but substantially extend in two directions, all three directions being perpendicular to each other. In particular, a plate is considered plate-like if its width and length are at least twice, five times, ten times, fifty times, one hundred times, or more than its thickness. The plate may still have irregularities on the top and / or bottom surfaces of the substrate structure, such as the surfaces containing power semiconductor elements, insulating grooves, chips, wires, and cooling structures such as cooling fins.

[0036] Of particular importance is understanding that if a typical essential part of the substrate structure, such as the base plate / bottom plate, insulating layer, or metallization layer, is plate-like, then the substrate structure is plate-like. The essential part is preferably considered to constitute at least 10%, 50%, or 75% of the weight and / or volume of the substrate structure, and this typically applies to one or both of the bottom plate and the insulating layer. It is most preferable that the insulating layer and / or bottom plate are plate-like and / or at least substantially plate-like. At least one metallization layer and / or metallization pattern may also be considered plate-like.

[0037] The top surface does not have to be a perfectly flat surface and may have a particular shape, for example, due to insulating grooves between metallized patterns, power conductor elements, and / or other features. The top surface substantially refers to one side of the substrate structure including, for example, at least one metallized layer and chip, and the bottom surface substantially refers to the other side of the substrate structure for arranging, for example, the entire power semiconductor module, such as a cooler or heat sink for heat transfer.

[0038] The substrate structure comprises an insulating layer, which may include a metallized layer on the upper side as the top metallized layer and, optionally, a metallized layer on the opposite side of the top metallized layer as the bottom metallized layer. The insulating layer may include a ceramic material and / or resin sheet, typically filled with inorganic particles or fibers, for electrical insulation. The insulating layer is typically a dielectric layer made from, for example, a flexible material or a solid material.

[0039] The substrate structure comprises an insulating layer, the insulating layer may include an upper metallized layer on the upper side of the substrate structure and a bottom metallized layer on the bottom side of the substrate structure. The insulating layer may also be a ceramic layer. The ceramic layer may include, for example, at least one type of ceramic and / or oxide, such as aluminum oxide, aluminum nitride, or silicon nitride. The upper metallized layer and / or bottom metallized layer may be bonded to and / or coated onto the insulating layer. The insulating layer and at least one metallized layer may be bonded to each other, for example, to form a structural unit.

[0040] At least one metallized layer, particularly the top metallized layer and / or bottom metallized layer, contains or consists of copper, aluminum, or alloys thereof. At least one metallized layer may have a coating, such as a nickel coating, for improved corrosion resistance, improved electrical properties, improved bonding properties, and / or cost reduction.

[0041] At least one metallized layer, particularly a top metallized layer and / or a bottom metallized layer, may be directly coated and / or formed on the insulating layer. The insulating layer can provide structural integrity to the substrate structure (e.g., the insulating layer provides greater mechanical stability and / or resistance to bending compared to at least one metallized layer), at least one metallized layer can provide electrical interconnection for at least the power semiconductor elements, and / or the bottom metallized layer can provide heat dissipation or venting means. In some specific power semiconductor module designs, the bottom metallized layer can provide electrical interconnection when used, for example, as a GND layer.

[0042] The substrate structure may have a bottom plate on the bottom surface opposite to the top surface. If necessary, the bottom plate may be bonded to the insulating layer (e.g., directly or indirectly), preferably indirectly via a metallizing layer such as a bottom metallizing layer, and / or directly via a bottom metallizing layer. A bonding layer may be provided between the bottom metallizing layer and the bottom plate, for example, by soldering, bonding, or silver / copper sintering. The bottom plate may include or be formed from a metal or metal composite material, such as AlSiC, MgSiC, aluminum, copper, steel, and / or other metals or alloys. In particular, the bottom plate may include metals within alloys and / or composite materials, especially AlSiC and / or MgSiC.

[0043] The bottom plate may be understood, for example, as a base plate or heat sink that functions as the base of a power semiconductor module, or may be generally referred to as a base plate or heat sink. Typically, the bottom plate is distinguished from these layers (e.g., metallization layers and / or insulating layers) in that its thickness is preferably more than 2 mm or 3 mm and / or less than 10 mm or 5 mm, and these layers typically exhibit a thinner thickness than the bottom plate. The bottom plate is distinguished from these layers (e.g., metallization layers and / or insulating layers) in that it preferably contains more than 2 wt% of aluminum, magnesium, carbon, silicon and / or other materials, and these layers may contain different materials. The bottom plate may contain the same material as at least one metallization layer, as well as the bottom metallization layer. If necessary, the bottom plate may contain a different material from at least one metallization layer or the bottom metallization layer. The bottom plate may be plate-like in that it has a solid and flat structure that extends substantially in / along a plane. For example, the base plate is substantially plate-like, even if it includes curved sections, raised sections, and / or recesses, and / or cooling structures such as cooling fins.

[0044] The base plate may be soldered and / or joined and / or sintered by silver or copper sintering, and / or preferably bonded and / or bonded to the insulating layer via at least one metallized layer. The substrate structure may include an insulating layer, at least one metallized layer on the upper side of the substrate structure, and a base plate on the lower side of the substrate structure. An insulating substrate, particularly an insulating metal substrate, can be formed by directly joining, brazing, and / or laminating the insulating layer to the base plate.

[0045] The insulating layer may be, for example, a polymer layer, polymer compound layer, resin layer, and / or resin sheet containing at least one polymer, particularly a polymer compound or resin, and may typically be a polymer layer filled with inorganic particles or fibers. The bottom plate may be equipped with means for heat dissipation or radiance, and may be attached to, for example, a cooling means.

[0046] In particular, to thermally connect the substrate structure to the cooler, a bottom metallized layer and / or bottom plate can be provided on the bottom surface of the substrate structure.

[0047] Power semiconductor elements are electrically, typically mechanically, connected to at least one metallized layer, particularly the top metallized layer. Terminal structures are provided for connecting power semiconductor modules, and especially power semiconductor elements, to the outside.

[0048] At least one metallized layer, particularly an upper metallized layer, can provide multiple (metallized) patterns for mounting power semiconductor elements and / or other electronic elements, such as sensors, control elements and / or passive elements, particularly for forming connection points for terminal structures to form external electrical interfaces on the outside. Patterns of at least one metallized layer for mounting terminal structures can be electrically connected to power semiconductor elements or other elements, or to other patterns of at least one metallized layer.

[0049] The substrate structure may be an integrated structure such as an insulating metal substrate including a metal base plate, an insulating sheet, and an upper metallized layer. Alternatively, the substrate structure may consist only of a ceramic sheet having an upper metallized layer and a bottom metallized layer, bonded to the base plate.

[0050] Power semiconductor elements may be in chip form. A power semiconductor module may include two or more power semiconductor elements. One or more transistors such as insulated-gate bipolar transistors (IGBTs), metal oxide semiconductor field-effect transistors (MOSFETs), and high electron-mobility transistors (HEMTs), diodes, and / or switching elements may be provided as power semiconductor elements.

[0051] Power semiconductor elements can be mounted on the same substrate structure for the module housing or on multiple substrate structures, for example, on the said substrate structure and another substrate structure, and may even be part of a substrate structure. Furthermore, a common bottom plate is provided, on which multiple elements including or consisting of a bottom metallized layer, an insulating layer, and an upper metallized layer are arranged and mounted, for example.

[0052] All power semiconductor elements may be of the same type, or there may be at least two different types of power semiconductor elements, such as diodes and / or transistors. Power semiconductor elements may be selected from the group including metal oxide semiconductor field-effect transistors (MOSFETs), metal insulator semiconductor field-effect transistors (MISFETs), insulated-gate bipolar transistors (IGBTs), bipolar junction transistors (BJTs), gate turn-off thyristors (GTOs), gate rectifier thyristors (GCTs), junction-gate field-effect transistors (JFETs), high electron mobility transistors (HEMTs), and diodes. If there are multiple power semiconductor elements, all power semiconductor elements may be of the same type, or they may be of different types.

[0053] The term "power semiconductor module" means, for example, that the module is configured for high current. For instance, a power semiconductor module is configured to handle currents of at least 10A, at least 50A, at least 100A, or at least 500A. Similarly, a power semiconductor device may be a high-power device, particularly a high-power chip.

[0054] At least one metallized layer can be in direct contact with the insulating layer. The insulating layer may be the only layer placed between two metallized layers. Alternatively, the insulating layer may be the only layer placed between the (upper) metallized layer and the bottom plate.

[0055] The insulating layer may include one or more ceramic layers. For example, the ceramic layers may include AlN, Si3Ni, Al2O3, BN, or a resin material filled with inorganic particles or inorganic fibers. The insulating layer may include or be composed of at least one insulating resin sheet. The insulating layer may be filled with an inorganic filler such as inorganic particles. At least one inorganic filler may be a ceramic material such as AlN, Al2O3, Si3N4, or BN.

[0056] The substrate structure provides an electrical contact platform for one, some, or all of the power semiconductor elements.

[0057] The thickness of at least one metallized layer may be at least 0.2 mm, 0.5 mm, 0.75 mm, or 1 mm or more. The thickness of at least one metallized layer may be up to 5 mm, 4 mm, 3 mm, or 2 mm or less. The thickness may be the nominal thickness of at least one metallized layer immediately after manufacturing (from raw materials).

[0058] At least one metallized layer may be deposited by a coating process, a lamination process, a brazing process, and / or a direct bonding process (e.g., applying a molten material to an insulating layer and / or ceramic body).

[0059] Joining may include soldering, sintering, silver sintering, bonding, brazing, and / or other methods.

[0060] To form individual conductive parts or conductive patterns of at least one metallized layer and / or at least one electrical circuit, isolation grooves may be provided in at least one metallized layer. In particular, the individual conductive parts or conductive patterns have at least substantially the same thickness. Multiple isolation grooves may be provided. Preferably, the power semiconductor element is positioned above at least one metallized layer, individually electrically connected to the conductive parts, and in particular positioned above and in contact with at least one metallized layer.

[0061] In a first preferred embodiment, the module housing has at least one passage for at least one electrical conductor. The at least one passage may be formed in the form of a hole and / or recess. The at least one electrical conductor can form an external electrical interface by extending from the substrate structure through the passage. In particular, the at least one electrical conductor can extend from the internal space of the power semiconductor module to the outside of the power semiconductor module. The at least one electrical conductor may be enclosed by the module housing within the at least one passage. The module housing can form an internal space. In other words, in particular, the at least one electrical conductor may extend from the inside to the outside. The at least one electrical conductor may be molded to at least substantially seal the at least one passage. The passage can facilitate manufacturing and mounting and make the module robust against ambient influences. The passage can support terminal structures.

[0062] In another preferred embodiment, at least one electrical conductor is formed by a primary forming process including casting, injection molding, sintering, and / or additive manufacturing. Additive manufacturing is also known in particular as 3D printing. Specifically, at least one electrical conductor is formed monolithically from a conductive material, for example, as a single unit and / or solid part. At least one electrical conductor is typically made at least partially or at least substantially from a conductive material, in particular graphite and / or conductive polymer compounds and / or metals, in particular metal alloys and / or metal compounds. Such primary forming processes are beneficial for cost-effective manufacturing and reduce mold costs compared to metal forming processes such as bending and punching, especially in small-volume production. Furthermore, such primary forming processes are beneficial for manufacturing parts with high morphological flexibility, low compressive stress, often long fatigue life, and relatively homogeneous microstructures. Additionally, parts can be easily fabricated using composite materials combining metal alloys, carbon, and / or polymers.

[0063] In particular, the terminal structure, especially at least one electrical conductor, is manufactured and / or formed without bending and / or punching. The terminal structure, especially at least one electrical conductor, is not mechanically bent or mechanically formed during manufacturing and / or forming. Therefore, in particular, the terminal structure, especially at least one electrical conductor, has a uniform distribution of grain size, tensile stress, and compressive stress, and does not require cold forming.

[0064] In another preferred embodiment, at least one electrical conductor comprises a non-conductive core having a conductive surface layer. The non-conductive core may be a plastic component, particularly a plastic component made of a polymer compound, or a ceramic component. The conductive surface layer may comprise a conductive polymer compound and / or a metal and / or carbon, particularly nickel, copper, aluminum, chromium, iron, and / or graphite. In other words, at least one electrical conductor is molded / formed from a non-conductive material by forming a solid component from the non-conductive material and forming a conductive coating and / or surface layer, particularly a conductive coating and / or surface layer comprising nickel, copper, aluminum, chromium, iron, and / or graphite, on the solid component. In particular, the terminal structure may be manufactured by molding a plastic component by injection molding and / or additive manufacturing and then coating it with a conductive material after injection molding and / or additive manufacturing. Such electrical conductors are particularly advantageous in control signal transmission applications. Furthermore, such mounting configurations are beneficial for development due to the low manufacturing costs of the components and / or molds.

[0065] At least one electrical conductor may include a conductive core having a non-conductive surface layer. In other words, an electrical conductor can be embedded in a non-conductive coating material and / or molding material. This can provide electrical insulation and enhance creep resistance or safety.

[0066] In another preferred embodiment, at least one electrical conductor is formed from metal particles or conductive ceramic particles, particularly by additive manufacturing. At least one electrical conductor may have a porous surface and / or be porous internally. The porosity may be, for example, at least 0.1%, 0.25%, 0.5%, 0.75%, 1%, 2.5%, or 5%. The porosity may be, for example, 5% to 10%. The pores may have closely spaced pores. By utilizing porosity, the amount of material used can be reduced, which is useful when only small currents need to be conducted, particularly when transmitting control signals. Porous surfaces can improve convective heat transfer from the electrical conductor because they increase the surface area.

[0067] In particular, porosity, or void ratio, is a measure of the amount of voids (i.e., "empty spaces") in a material, and is the ratio of void volume to total volume (0-1 or 0%-100%). Porosity can be measured using several methods: Direct methods (e.g., determining the bulk volume of a porous sample and then determining the volume of the skeletal material without pores (pore volume = total volume - material volume)); Optical methods (e.g., measuring the area of ​​the material and the area of ​​pores observable under a microscope). For porous media with a random structure, "area" porosity and "volume" porosity are equal. Computed tomography (using industrial CT scans to create 3D renderings of the external and internal geometry, including voids, and then performing defect analysis using computer software). Many other methods for measuring porosity are known in the art.

[0068] In another preferred configuration, at least one electrical conductor comprises or consists of aluminum and / or an aluminum alloy. Aluminum or its alloys are lightweight and relatively good electrical and thermal conductors. Furthermore, aluminum has a relatively low melting point, making it useful in primary forming processes where the material is heated to its melting point.

[0069] At least one electrical conductor has an electrical resistance, also called electrical resistivity, volume resistivity, or specific resistivity. Electrical resistance includes a minimum, average, and / or maximum value. Electrical resistance applies to the material that forms at least one electrical conductor, at least partially or entirely.

[0070] The electrical resistance of at least one electrical conductor may be at least 2.8 μΩcm and / or up to 3.5 μΩcm, particularly in the case of aluminum or an aluminum alloy. The electrical resistance may be at least 3.0 μΩcm and / or up to 3.3. Such electrical resistance can be achieved, in particular, by employing the primary molding process described herein.

[0071] In another preferred implementation, at least one electrical conductor contains or consists of copper and / or a copper alloy. Copper or copper alloys have very good electrical and thermal conductivity and are relatively easy to manufacture.

[0072] The electrical resistance of at least one electrical conductor may be at least 1.7 μΩcm and / or up to 2.0 μΩcm, particularly in the case of copper or a copper alloy. The electrical resistance may be at least 1.8 μΩcm and / or up to 1.9 μΩcm. Such electrical resistance can be achieved, in particular, by employing the primary molding process described herein.

[0073] By using at least one electrical conductor with slightly increased electrical resistance, particularly by employing a primary molding process, specific advantages such as thermal management, adjustment of electrical parameters, attenuation of current peaks, and overload protection can be achieved. These advantages can increase reliability and service life, enable good integration of the system into complex environments, and reduce manufacturing costs.

[0074] At least one electrical conductor has elongation at break. Elongation at break typically defines how far a material can stretch before breaking, and includes a minimum, average, and / or maximum value. Elongation at break applies to the material that forms at least one electrical conductor, at least partially or entirely. Elongation at break can be measured according to ISO 6892-1:2019-11.

[0075] The elongation at break of at least one electrical conductor may be at least 5%, or at least 10%, or at least 15%, or at least 20%, or at least 25%, and especially at least 30%, particularly in the case of aluminum, copper, or alloys. The elongation at break, especially the minimum elongation at break, can ensure certain safety measures against deformation, for example, when excessive force is applied to the terminal structure from the outside. For example, when thermal or mechanical stress occurs, an elongation at break of at least 5% can ensure that at least one electrical conductor undergoes plastic deformation rather than breakage.

[0076] For example, a sample can be cut from at least one electrical conductor and tested for elongation at break and / or electrical resistance. Alternatively, a sample can be manufactured by casting, injection molding, sintering and / or additive manufacturing to obtain material properties substantially similar to those of at least one electrical conductor.

[0077] In another preferred embodiment, at least one electrical conductor comprises a polymer compound, such as a plastic. The polymer compound may also comprise a conductive material, such as a metal or carbon, particularly metal particles or carbon particles. At least one electrical conductor may be coated with a conductive material. By using a polymer compound, costs can be reduced because the polymer compound satisfies structural requirements while reducing the amount of conductive material such as metal required. Furthermore, polymer compounds typically have lower melting points than conductive materials such as metals, allowing for lower manufacturing temperatures and thus easier manufacturing. Additionally, the polymer compound can provide electrical insulation for at least one electrical conductor, thereby enhancing safety.

[0078] In another preferred embodiment, at least one electrical conductor has two or more sections of different thicknesses along its extending direction, and / or in particular, a variable thickness of at least 10%. The extending direction is typically considered with respect to the flow of current. To reduce high-current-density currents flowing through at least one electrical conductor, particularly when the width of at least one electrical conductor decreases within a section, the electrical conductor may have, for example, sections of substantially increased thickness. Also, when the width of an electrical conductor increases within another section, the electrical conductor may have, for example, another section of substantially decreased thickness. Such sections may be adjacent to each other within at least one electrical conductor. Also, for example, the electrical conductor may have a flat cross-section. In this case, the top and bottom edges may be flat and parallel to each other, and the other sides may be curved or convex. Thus, the cross-section of the electrical conductor preferably includes two substantially parallel sides facing each other on one side and at least two partially curved and / or non-parallel sides facing each other on the other side. The cross-section of the electrical conductor does not have to be rectangular. Therefore, the electrical conductors can be configured to match the complex internal shapes required for the structure of the power semiconductor module.

[0079] In another preferred embodiment, at least one electrical conductor has a contact surface configured to form an electrical connection with a substrate structure. The at least one electrical conductor may extend monolithically from the contact surface to an external electrical interface. Alternatively or additionally, the contact surface may have a lower surface roughness (e.g., surface roughness Ra) than other surfaces of the at least one electrical conductor, and / or may be finished by cutting and / or grinding or polishing. This can reduce electrical resistance and increase overall electrical efficiency.

[0080] Surface roughness is generally understood as the short frequency of peaks and valleys on the actual surface relative to the valleys. A surface typically embodies a complex shape consisting of a series of peaks and valleys with varying heights, depths, and spacings. Surface roughness is greatly influenced by the microscopic irregularities of the surface. Surface roughness can be quantified using profile roughness parameters such as Ra and Rq. These profile roughness parameters are included in the British standard BS EN ISO 4287:2000, which is identical to the ISO 4287:1997 standard. This standard is based on the "M" (average line) method. While many different roughness parameters are used, Ra is very common. Other common parameters include Rz, Rq, and Rsq. Profile roughness parameters such as Ra are typically measured in dimensional units, such as micrometers or microinches.

[0081] In particular, profile roughness parameters such as mean roughness, mean surface roughness, or Ra are specific surface texture parameters. They provide a measure of the overall texture height of the surface. Ra is the average value indicating how far the height of each point on the surface is from the average height. In other words, Ra represents the deviation of the surface from its average height.

[0082] The method and / or power semiconductor module may be improved by the conductive material comprising aluminum, copper, gold, and / or polymer compounds. Alloys, compounds, metal matrix materials, plastic matrix materials, or ceramic matrix materials can be designed using any of the materials described herein.

[0083] The method of the present invention may include the step of connecting at least one electrical conductor to a substrate structure, particularly by soldering and / or welding, especially at the contact surfaces of at least one electrical conductor. The method of the present invention may include the step of attaching the module housing to the substrate structure, particularly after the connecting step, particularly by screwing, gluing, clamping and / or bonding. The module housing may be attached to the top surface of the substrate structure and / or attached to the substrate structure away from the bottom surface of the substrate structure. The step of attaching the module housing to the substrate structure may be performed after the step of connecting at least one electrical conductor to the substrate structure.

[0084] The module housing may be a molded body. In particular, the method of the present invention may include a step of molding the module housing, for example, injection molding or transfer molding.

[0085] The method of the present invention may include heating the conductive material to a temperature of at least 200°C and / or up to 1500°C in the primary molding process. The temperature can be selected depending on the melting temperature of the conductive material. For example, the temperature can be selected to be below the melting temperature (especially in the case of sintering) or above the melting temperature (especially in the case of casting or molding). The conductive material may or may not be melted. In particular, the conductive material may be melted to form a shape. This occurs in most cases during and / or after injection molding, casting, or additive manufacturing. Additive manufacturing may also include printing the conductive material (e.g., a paste containing particles) below its melting point and then carrying out a firing or sintering process (e.g., if the paste contains particles to which it is bound). Alternatively, the conductive material may remain at least partially or completely solid, i.e., not melted. This occurs in most cases during sintering or optionally during additive manufacturing.

[0086] In the case of sintering, the pressure may be selected depending on the temperature, material, and / or particle size. Throughout this disclosure, the term "or" may be replaced by "and / or." Therefore, when "or" is used, it does not necessarily mean simply specifying an alternative.

[0087] These and other embodiments of the present invention will become apparent with reference to the implementations described below. [Brief explanation of the drawing]

[0088] [Figure 1] This is a schematic cross-sectional view showing a power semiconductor module comprising a module housing, a substrate structure, and a terminal structure, wherein the terminal structure is formed by two electrical conductors and an external electrical interface. [Figure 2] This is a perspective view showing a power semiconductor module. [Figure 3] This figure shows the method according to the present invention. [Modes for carrying out the invention]

[0089] Description of the Embodiment This description includes procedural or methodological aspects when describing the structural features of power semiconductor module 1. In this way, the structural features can be well understood. It should be emphasized to the reader that these structural features can be taken out of the described context without hesitation or intermediate generalization to form aspects of the invention. It should also be emphasized to the reader that any structural feature described below, although it may be taken out of context, can be understood as an individual aspect of the invention to distinguish it from known solutions.

[0090] Figure 1 shows a power semiconductor module 1. Module 1 comprises a module housing 10, a substrate structure 20, and a terminal structure 40.

[0091] The substrate structure 20 comprises a base plate 28 and an insulating layer 26, the insulating layer 26 including a metallized layer 22 as an upper metallized layer and a metallized layer 23 as a bottom metallized layer. The bottom metallized layer 23 is attached to the base plate 28 by, for example, soldering, silver / copper sintering and / or bonding. Layers 22, 23 and 26 together with the base plate 28 form a structural unit.

[0092] A power semiconductor element 24 is placed on the upper surface 30 of the substrate structure 20 on which the upper metallized layer 22 is located. This power semiconductor element 24 is placed on the upper metallized layer 22 by soldering, sintering, or bonding. Thus, the chip is mechanically and electrically connected and / or bonded to the upper metallized layer 22.

[0093] The substrate structure 20 is substantially plate-shaped and has an upper surface 30 and a bottom surface 32 opposite the upper surface 30. The substrate structure 20 has an upper metallized layer 22 as one of at least one metallized layer 22, 23, which is located on the upper surface 30. The bottom plate 32 is mechanically bonded to the insulating layer 26 via the bottom metallized layer 23.

[0094] The substrate structure 20 includes at least one metallized layer 22, 23, i.e., two metallized layers 22, 23. The top metallized layer 22 and the bottom metallized layer 23 are each one of at least one metallized layer 22, 23, in particular one of two metallized layers 22, 23. The top metallized layer 22 and the bottom metallized layer 23 are formed on the opposing surfaces 30, 32 of the insulating layer 26, the insulating layer 26 being made of, for example, a ceramic material or an insulating resin material. At least one metallized layer 22, 23, in particular the top metallized layer 22 and the bottom metallized layer 23, is made of copper or a copper alloy, or aluminum or an aluminum alloy. The top metallized layer 22 provides electrical interconnection for the power semiconductor element 24. The bottom metallized layer 23 forms a means for heat or heat dissipation to the bottom plate 28, in particular.

[0095] The metallized layers 22 and 23 are in direct contact with the insulating layer 26. The insulating layer 26 is the only layer between the upper metallized layer 22 and the lower metallized layer 23. The bottom metallized layer 23 is the only layer between the insulating layer 26 and the bottom plate 28. One side of the bottom metallized layer 23 is bonded to the insulating layer 26, and the other side is bonded to the bottom plate 28. The thickness of the metallized layers 22 and 23 is, for example, 0.5 mm. The metallized layers 22 and 23 are deposited on the insulating layer by a coating process, a lamination process, a direct bonding process, and / or a brazing process.

[0096] The upper metallized layer 22 has, for example, separation grooves 38 for forming individual conductive portions and / or metallized patterns of the upper metallized layer 22 having the same thickness. The power semiconductor element 24 is positioned above the upper metallized layer 22 and is electrically connected to the conductive portions individually.

[0097] The module housing 10 has an internal space 6 for housing the power semiconductor elements 24. The module housing 10 has side walls 34 and an upper cover 36. The upper cover 36 is located on the opposite side of the substrate structure 20. The module housing 10 is attached to the substrate structure 20, in particular to the bottom plate 28. In particular, the walls 34 are attached / fixed to the substrate structure 20 via contact surfaces, for example by adhesive. This houses the power semiconductor elements 24.

[0098] In Figure 1, the terminal structure 40 is formed as two electrical conductors 42 and 44. At least one of the conductors 32 and 44 is formed by a primary molding process. Conductor 42 transmits the main power and is formed, for example, by additive manufacturing or sintering. Conductor 44 transmits the control signals and is formed by metal injection molding or casting and is manufactured, for example, from an aluminum alloy or a copper alloy. The electrical conductors 42 and 44 are electrically and mechanically connected to the substrate structure 20. The electrical conductors 42 and 44 constitute or form the external electrical interfaces 2 and 4 of the power semiconductor module 1. The external electrical interfaces 2 and 4 are connected to the electrical conductors 42 and 44, respectively, and are particularly bonded. The conductors 42 and 44 are soldered, welded, or sintered to the substrate structure 20, particularly to the top metallized layer 22.

[0099] The module housing 10 has two passages 12 and 14 corresponding to electrical conductors 42 and 44, respectively. The passages 12 and 14 are holes or openings. The electrical conductors 42 and 44 extend from the substrate structure 20, respectively, to form external electrical interfaces 2 and 4. The electrical conductors 42 and 44 extend from the internal space 6 to the outside 8. The electrical conductors 42 and 44 are enclosed by the housing within the corresponding passages 12 and 14.

[0100] The electrical conductors 42 and 44 are formed monolithically from a conductive material, for example, as a single unit and / or as a solid component. Electrical conductors 42 manufactured by additive manufacturing or sintering may be porous internally. The porosity is typically at least 0.1% and up to 10%. Each of the electrical conductors 42 and 44 has sections S1, S2, and S3 of different thicknesses. In particular, sections S1, S2, and S3 may be oriented in the same direction or in different directions. For example, sections S1, S2, and S3 may be perpendicular or horizontal to the substrate structure 20. Sections S1, S2, and S3 are thought to extend along each of the electrical conductors 42 and 44 between the substrate structure 20 and the external electrical interfaces 2 and 4. Thus, the thickness is variable along the extending direction of the electrical conductors 42 and 44. In particular, conductor 44 has three sections S1, S2, and S3 of different thicknesses.

[0101] In a cross-section perpendicular to the typical current flow from the substrate structure 20 to each interface 2, 4, the electrical conductors 42, 44 have a substantially flat shape with two substantially parallel sides and substantially non-parallel sides. In other words, in a cross-section perpendicular to the current flow, the electrical conductors 42, 44 may have a shape with only two substantially parallel sides and / or may not be formed as a rectangle. This reduces the number of sharp edges, thereby increasing robustness against mechanical loads along with increased fatigue life, increasing the surface area for heat dissipation, and improving user handling. The thickness, at least locally, improves the current and heat flow within the terminal structure 40, as well as reducing heat generation due to ohmic losses.

[0102] Each of the electrical conductors 42 and 44 has a contact surface 46 configured to form an electrical connection with the substrate structure 20. The electrical conductors 42 and 44 extend monolithically from the contact surface 46 to the external electrical interfaces 2 and 4. The contact surface 46 has a surface roughness, e.g., roughness Ra, that is lower than the roughness, e.g., roughness Ra, of the other surfaces of the electrical conductors 42 and 44 (surfaces away from the contact surface 46).

[0103] In certain embodiments, the electrical conductor includes a non-conductive core having a conductive surface layer. Figure 2 is a perspective view of a power semiconductor module 1 equipped with external electrical interfaces 2 and 4 accessible from an external source 8, illustrating another embodiment of the present invention.

[0104] The power semiconductor module 1 includes a module housing 10 mounted on a substrate structure 20 and a terminal structure 40. The terminal structure 40 is an arrangement and / or arrangement including at least six electrical conductors 42 including an external electrical interface 2 made of a copper alloy and at least three electrical conductors 44 including an external electrical interface 4.

[0105] One of the electrical conductors 44 contains a core injection-molded from an electrically non-conductive polymer compound, which is coated with a copper alloy. This electrical conductor 44 is used to transmit control signals, while the other electrical conductors 42 are used primarily to transmit power at high currents. In particular, all six electrical conductors 42 are power terminals for transmitting power.

[0106] The electrical conductors 42 and 44 penetrate the passages within the housing 10. Referring particularly to Figure 1, interfaces 2 and 4 are attached to and specifically bonded to the corresponding electrical conductors 42 and 44. The electrical conductors 42 and 44 are bonded to the substrate structure 20 on the top surface 30 and internal space 6 of module 1. Electrical conductor 42 extends from the substrate structure 20 to sections supporting interfaces 2 and 4 of different thicknesses and / or directions. In Figure 1, one section indicated by reference nominal S1 supports interface 2, which is visible and accessible from the outside 8, and another section indicated by reference nominal S1 supports interface 4, which is visible and accessible from the outside 8. In Figure 2, the electrical conductors 42 and 44 themselves directly form the external electrical interfaces 2 and 4 using section S1.

[0107] The electrical conductor 42 is manufactured by primary molding processes such as injection molding, sintering, and casting. The internal space 6 is formed by bonding the contact surface of the module housing 10 to the contact surface of the substrate structure 20. The module housing 10 has four side walls 34 arranged substantially in a rectangular shape. In particular, the module housing 10 has an upper cover 36 positioned opposite the substrate structure 20. The upper cover 36 and the side walls 34 are formed monolithically and / or integrally.

[0108] The substrate structure 20 has a metallized layer (not shown) to which an electrical conductor 42 is electrically and mechanically connected. A chip-shaped power semiconductor element is placed on the metallized layer and mechanically and electrically connected (not shown). The metallized layer is coated on an insulating layer (not shown), and the insulating layer is attached to a bottom plate 28. The bottom plate 28 has a contact surface for attachment to the module housing 10. The bottom surface 32 is located below the bottom plate 28. The bottom plate 28 is typically at least substantially flat at the bottom surface 32. In applications not shown, cooling fins or cooling structures may be formed on the bottom surface of the bottom plate 28.

[0109] Module 1 shown in Figures 1 and 2 is manufactured, for example, using the method of the present invention shown in Figure 3. In the method of the present invention, first, in step 100, a substrate structure 20 having at least one power semiconductor element 24 is prepared. Next, in step 200, typically simultaneously with, or before or after, the preparation of the substrate structure 100, a module housing 10 is prepared which is attached to the substrate structure 20 and configured to house the power semiconductor element 24. Furthermore, in step 300, a terminal structure 40 is manufactured.

[0110] The terminal structure 40 has at least one electrical conductor 42, 44 and is electrically connected to at least one power semiconductor element 24, forming at least one external electrical interface 2, 4 for transmitting main power and / or control signals. The interfaces 2, 4 extend to the substrate structure 20.

[0111] The terminal structure 40 is manufactured in step 300 by molding a conductive material according to a primary molding process.

[0112] In step 400, the conductors 42 and 44 are connected to the contact surface 46 of the substrate structure 20 by soldering, sintering, bonding, or welding. Step 400 is performed after steps 100 and 300, and preferably before step 500, which will be described later.

[0113] In step 500, particularly after step 400 and after step 200, the module housing 10 is attached to the substrate structure 20, for example, by screwing or adhesive. [Explanation of Symbols]

[0114] 1 Power semiconductor module, 2 External electrical interface, 4 External electrical interface, 6 Internal space, 8 External, 10 Module housing, 12 Passageway, 14 Passageway, 20 Substrate structure, 22 Metallized layer, 23 Metallized layer, 24 Power semiconductor element, 26 Insulating layer, 28 Bottom plate, 30 Top surface, 32 Bottom surface, 34 Side wall, 36 Top cover, 38 Separation groove, 40 Terminal structure, 42 Electrical conductor, 44 Electrical conductor, 46 Contact surface, S1 Section, S2 Section, S3 Section, 100 Preparation step, 200 Preparation step, 300 Manufacturing step, 400 Connecting step, 500 Mounting step.

Claims

1. A power semiconductor module (1), Module housing (10) and The substrate structure (20) includes at least one metallized layer (22, 23) and at least one power semiconductor element (24) electrically connected to the at least one metallized layer (22, 23), wherein the substrate structure (20) is mounted on the module housing (10) to accommodate the power semiconductor element (24). The terminal structure (40) is electrically connected to the substrate structure (20) and is configured to provide an external electrical interface (2, 4) for the power semiconductor module (1) to transmit main power and / or control signals to the substrate structure (20), The terminal structure (40) is a power semiconductor module (1) having at least one electrical conductor (42, 44) formed by casting, injection molding, sintering and / or additive manufacturing.

2. The module housing (10) has at least one passage (12, 14) for the at least one electrical conductor (42, 44), The at least one electrical conductor (42, 44) extends from the substrate structure (20) to the outside (8) of the power semiconductor module (1) within the internal space (6) of the power semiconductor module (1), thereby forming the external electrical interface (2, 4). In particular, the at least one electrical conductor (42, 44) is surrounded by the module housing (10) within the at least one passage (12, 14), and / or The module housing (10) is a power semiconductor module (1) according to the preceding claim, forming the internal space (6).

3. The at least one electrical conductor (42, 44) is formed without bending and / or punching, In particular, the power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) is formed monolithically from a conductive material.

4. The at least one electrical conductor (42, 44) comprises a non-conductive core having a conductive surface layer, and in particular the conductive surface layer comprises nickel, copper, chromium, iron, and / or carbon. In particular, the power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) comprises a polymer compound.

5. The at least one electrical conductor (42, 44) has a porous surface and / or is porous inside, Preferably, the power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) is formed from metal particles.

6. The at least one electrical conductor (42, 44) contains aluminum or is made of an aluminum alloy. The power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) has an electrical resistance of at least 2.8 μΩcm and / or up to 3.5 μΩcm, and in particular at least 3.0 μΩcm and / or up to 3.3 μΩcm.

7. The at least one electrical conductor (42, 44) contains copper or is made of a copper alloy. The power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) has an electrical resistance of at least 1.7 μΩcm and / or up to 2.0 μΩcm, and in particular at least 1.8 μΩcm and / or up to 1.9 μΩcm.

8. The power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) has an elongation at break of at least 5%, and in particular at least 10%.

9. The power semiconductor module (1) according to any one of the preceding claims, wherein the at least one electrical conductor (42, 44) has two or more sections (S1, S2, S3) of different thicknesses along its extending direction, and / or has a variable thickness of at least 10%.

10. The at least one electrical conductor (42, 44) has a contact surface (46) configured to form an electrical connection with the substrate structure (20), The at least one electrical conductor (42, 44) extends monolithically from the contact surface (46) to the external electrical interface (2, 4), and / or The power semiconductor module (1) according to any one of the preceding claims, wherein the contact surface (46) has a lower surface roughness than the other surfaces of at least one electrical conductor (42, 44) and / or is finished by machining.

11. A terminal structure (40) configured for a power semiconductor module (1) according to any one of the preceding claims, The terminal structure (40) is electrically connected to the substrate structure (20) and configured to provide the external electrical interfaces (2, 4). The terminal structure (40) has at least one electrical conductor (42, 44) formed by casting, injection molding, sintering and / or additive manufacturing.

12. A method for manufacturing a power semiconductor module (1), The steps (100) include providing a substrate structure (20) having at least one power semiconductor element (24), The steps (200) include providing a module housing (10) that is attached to the substrate structure (20) and configured to house the at least one power semiconductor element (24), The process includes the step (300) of manufacturing a terminal structure (40) having at least one electrical conductor (42, 44), being electrically connected to the at least one power semiconductor element (24), and configured to provide an external electrical interface (2, 4) for transmitting main power and / or control signals to the substrate structure (20), The manufacturing step (300) is a method comprising forming a conductive material by a primary molding process, such as casting, injection molding, sintering and / or additive manufacturing.

13. The method according to the preceding claim, wherein the conductive material comprises aluminum, copper, and / or a polymer compound.

14. The primary molding process includes the step of heating the conductive material to a temperature of at least 200°C and / or up to 1500°C. The conductive material is meltable or non-meltable, according to the method of any one of the two preceding claims.

15. The step (400) of connecting the at least one electrical conductor (42, 44) to the substrate structure (20) by soldering and / or welding, particularly at the contact surface (46) of the at least one electrical conductor (42, 44), The method according to any one of the preceding three claims, further comprising the step of attaching the module housing (10) to the substrate structure (20), particularly by screwing and / or adhesive, after the connecting step (400).

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