Superconducting device and manufacturing method thereof

Abstract

To provide a superconducting device that can obtain an input-output characteristic as designed with noncontact coupling, and a manufacturing method for the same.SOLUTION: A superconducting device includes a superconducting integrated circuit chip and a circuit board. The superconducting integrated circuit chip includes a first electrode formed of a first superconducting material and a first noncontact coupling circuit on a surface thereof. The circuit board includes a second electrode formed of a second superconducting material and a second noncontact coupling circuit on a surface thereof. The second electrode includes a tubular protrusion with predetermined height having a flat upper end surface. The upper end surface of the protrusion is directly coupled with a surface of the first electrode, and the first noncontact coupling circuit and the second noncontact coupling circuit are disposed to face each other.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to superconducting devices and methods for making same. [Background technology]

[0002] In order to integrate superconducting circuits, the use of a structure in which a superconducting circuit integrated chip carrying an integrated circuit is flip-chip mounted on a circuit board is being considered. In this structure, to suppress signal reflection and interference and ensure the required signal quality (transmission characteristics), capacitive coupling, which can reduce the wiring of the integrated circuit, and non-contact coupling using inductive coupling are considered promising.

[0003] As a specific structure, for example, a required number of capacitive coupling circuits or inductive coupling circuits for inputting and outputting signals may be arranged on the superconducting integrated circuit chip, and non-contact coupling circuits may be arranged on the circuit board at corresponding positions. In order for the two non-contact coupling circuits to form a good non-contact coupling, a technique is required to couple the superconducting integrated circuit chip and the circuit board while maintaining a predetermined distance between them.

[0004] A technology that meets the above requirements is disclosed in, for example, Patent Document 1. In the technology of Patent Document 1, a second metal layer made of tin or tin and lead is laminated on the superconducting wiring provided on the circuit board, and the electrodes of the second metal layer and the electrodes of the superconducting element are connected with solder. In this technology, a second metal layer with good solder wettability is formed on the superconducting wiring, and the electrodes of the superconducting element and the superconducting wiring of the circuit board are connected. As a result, a highly reliable connection between the superconducting element and the circuit board can be obtained. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 2813093 Summary of the Invention [Problem to be solved by the invention]

[0006] However, the structure disclosed in Patent Document 1 had a problem in that the distance between the non-contact coupling circuit of the superconducting integrated circuit chip and the non-contact coupling circuit of the circuit board could not be accurately controlled. This was because there was a possibility that the positions would shift while the molten solder was solidifying. As a result, there were cases where the input / output characteristics could not be obtained as designed.

[0007] The present invention has been made in consideration of the above problems, and has an object to provide a superconducting device that is capable of obtaining input / output characteristics as designed with non-contact coupling, and a method for manufacturing the same. [Means for solving the problem]

[0008] In order to solve the above problems, the superconducting device of the present invention has a superconducting integrated circuit chip and a circuit board. The superconducting integrated circuit chip has a first electrode made of a first superconducting material and a first non-contact coupling circuit on its surface. The circuit board has a second electrode made of a second superconducting material and a second non-contact coupling circuit on its surface. The second electrode has a cylindrical protrusion of a predetermined height and a flat upper end surface. The upper end surface of the protrusion is directly joined to the surface of the first electrode, and the first non-contact coupling circuit and the second non-contact coupling circuit are arranged opposite each other.

[0009] The method for manufacturing a superconducting device of the present invention uses a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on its surface, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on its surface, and then forms a cylindrical protrusion of a predetermined height and having a flat upper end surface on the second electrode, directly bonds the surface of the first electrode to the upper surface of the protrusion, and arranges the first non-contact coupling circuit and the second non-contact coupling circuit to face each other. Effect of the Invention

[0010] The effect of the present invention is to provide a superconducting device capable of obtaining input / output characteristics as designed with non-contact coupling, and a method for manufacturing the same. [Brief description of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view showing a configuration of a superconducting device of a first embodiment. [Diagram 2] FIG. 11 is a plan view showing a superconducting integrated circuit chip used in a superconducting device of a second embodiment. [Diagram 3] FIG. 11 is a plan view showing a circuit board used in a superconducting device of a second embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing a superconducting device of a second embodiment. [Diagram 5] 6A to 6C are cross-sectional views showing a first part of a method for manufacturing a circuit board according to a second embodiment. [Figure 6] 6A to 6C are cross-sectional views showing a second part of the method for manufacturing the circuit board according to the second embodiment. [Figure 7] 6A to 6C are cross-sectional views showing a third part of the method for manufacturing the circuit board according to the second embodiment. [Figure 8] 10A to 10C are cross-sectional views showing a fourth part of the method for manufacturing the circuit board according to the second embodiment. [Figure 9] 5 is a cross-sectional view showing a first part of a method for manufacturing a superconducting device according to a second embodiment. FIG. [Figure 10] 6 is a cross-sectional view showing a second part of the method for manufacturing a superconducting device according to the second embodiment. FIG. [Figure 11] FIG. 4 is a cross-sectional view showing a third part of the method for manufacturing a superconducting device according to the second embodiment. [Figure 12] FIG. 11 is a cross-sectional view showing a superconducting device of a third embodiment. [Figure 13] FIG. 11 is a cross-sectional view showing a superconducting device of a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. However, the embodiments described below are limited in a technically preferable manner for carrying out the present invention, but the scope of the invention is not limited to the following. Note that the same components in each drawing are given the same numbers, and the description may be omitted.

[0013] (First embodiment) FIG. 1 is a cross-sectional view showing a superconducting device 1 of this embodiment. The superconducting device 1 has a superconducting integrated circuit chip 10 and a circuit board 20. The superconducting integrated circuit chip 10 has a first electrode 11 made of a first superconducting material and a first non-contact coupling circuit 12 on its surface. The circuit board 20 has a second electrode 21 made of a second superconducting material and a second non-contact coupling circuit 22 on its surface. The second electrode 21 has a cylindrical protrusion 21a with a predetermined height and a flat upper end surface. The upper end surface 21b of the protrusion 21a is directly joined to the surface of the first electrode 11, and the first non-contact coupling circuit 12 and the second non-contact coupling circuit 22 are arranged to face each other.

[0014] With the above configuration, the presence of the protrusion 21a makes it possible to accurately control the distance between the first non-contact coupling circuit 12 and the second non-contact coupling circuit, thereby achieving input / output characteristics as designed through non-contact coupling.

[0015] Second embodiment In this embodiment, a superconducting device that is easier to manufacture than the first embodiment will be described. FIG. 2 is a plan view showing a superconducting integrated circuit chip 100 used in the superconducting device. The superconducting integrated circuit chip 100 has a chip base material 101, and a first electrode 110 made of a first superconducting material and a first non-contact coupling circuit 120 are formed on the surface of the chip base material 101. The first electrode 110 is connected to, for example, a ground circuit (not shown). The first non-contact coupling circuit 120 is connected to, for example, a superconducting element (not shown). For the first superconducting material, for example, niobium, niobium nitride, aluminum, indium, lead, tin, rhenium, palladium, titanium, titanium nitride, tantalum, or an alloy containing these can be used. For example, silicon can be used for the chip base material 101. The first non-contact coupling circuit 120 is, for example, a capacitive coupling circuit or an inductive coupling circuit for inputting and outputting signals to and from a circuit board 200.

[0016] FIG. 3 is a plan view showing a circuit board 200 used in a superconducting device. A substrate base material 201 of the circuit board 200 can be made of, for example, silicon. A second electrode 210 made of a second superconducting material and a second non-contact coupling circuit 220 are formed on the surface of the circuit board 200. A columnar protrusion 212 is formed on the circuit board 200, and a protrusion 211 made of a second superconducting material is formed covering the side surface of the protrusion 212, and the protrusion 211 forms a part of the second electrode 210. That is, the second electrode 210 has a cylindrical protrusion 211 having a predetermined height and a flat upper end surface 211a. For example, niobium, niobium nitride, aluminum, indium, lead, tin, rhenium, palladium, titanium, titanium nitride, tantalum, or an alloy containing these can be used as the second superconducting material. The second electrode 210 is connected to, for example, a ground circuit not shown. The second contactless coupling circuit 220 is connected to, for example, an electronic circuit (not shown). When the circuit board 200 is further connected to an external electronic device, the circuit board serves as an interposer.

[0017] The upper end surface 211a of the protrusion 211 is a flat and smooth surface, and is formed so that the roughness is, for example, Ra1 nm or less. The height of the protrusion 211 is set to a height that allows the designed input / output characteristics of signals to be obtained between the non-contact coupling between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220. A specific value of the height can be, for example, 2 μm to 10 μm.

[0018] FIG. 4 is a cross-sectional view showing a superconducting device 1000 formed by bonding a superconducting integrated circuit chip 100 and a circuit board 200. As shown in FIG.

[0019] The second electrode 210 of the circuit board 200 is formed by laminating a thin film of a second superconducting material on the wiring portion 230 formed on the substrate base material 201. The wiring portion 230 can be formed by using, for example, copper, silver, gold, platinum, or an alloy containing these. By providing the wiring portion, it is possible to improve heat dissipation and perform processing in a normal conductive state. The protrusion portion 211 is formed as a cylindrical structure that covers the side of a columnar protrusion 212 made of a material different from the second superconducting material. The protrusion portion 212 can be formed by using, for example, a metal such as copper, silver, gold, platinum, or an alloy containing these. In order to ensure the adhesive strength between the second electrode 210 and the wiring portion 230, a base such as titanium or titanium nitride may be added. In addition, the wiring portion 230 may be configured to have a base layer so as to increase the adhesiveness between the wiring portion 230 and the substrate base material 201.

[0020] The superconducting integrated circuit chip 100 and the circuit board 200 are connected and fixed by directly joining the first electrode 110 and the upper end surface 211a of the protrusion 211 of the second electrode 210. This connection is so-called face-down mounting, in which the circuit surface of the superconducting integrated circuit chip 100 faces the circuit surface of the circuit board 200. Here, the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 are accurately positioned so as to face each other. The distance between them is accurately controlled by the protrusion 211. As a result, it is possible to obtain desired values ​​for the capacitance in capacitive coupling and the mutual inductance in inductive coupling.

[0021] The upper end surface 211a of the protrusion 211 and the first electrode 110 are bonded by activating the surfaces and then bringing them into contact with each other. This technique is generally known as room temperature bonding. By this bonding, the first electrode 110 and the upper end surface 211a of the protrusion 211 are firmly bonded to each other with an amorphous layer formed at the interface by the superconducting material that constitutes each of them.

[0022] In the above description, a structure in which the second superconducting material thin film is not disposed on the second non-contact coupling circuit 220 has been shown, but a structure in which the second superconducting material thin film is laminated on the second non-contact coupling circuit 220 may be used. The shape and arrangement of the protrusions 211 shown in FIG. 4 are not limited to this, and a polygonal cylindrical shape or the like can be applied, and the protrusions can be disposed at any position where the designed input / output characteristics can be obtained. Although an example in which the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 have a cross shape has been shown, the shape is not limited to this and any shape can be used. Furthermore, an example in which four protrusions 211 are disposed around the second non-contact coupling circuit 220 has been shown, but the arrangement is not limited to this and any arrangement can be used.

[0023] Next, a method for forming the protrusion 211 on the second electrode 210 of the circuit board 200 will be described. First, as shown in the cross-sectional view of Fig. 5, a second non-contact coupling circuit 220, a wiring section 230, and a columnar protrusion 212 are formed on the surface of the substrate base material 201, and a superconductor film 210a that is the base of the second electrode 210 is formed so as to cover the protrusion 212. This structure is formed by film formation, photolithography, etching, etc., but since these are common methods, detailed explanations will be omitted.

[0024] 6, a burying layer 300 is formed to flatten the surface until the superconductor film 210a covering the upper surface of the protrusion 212 is buried. The burying layer 300 may be made of, for example, a resin.

[0025] Next, as shown in Fig. 7, planarization is performed by cutting with a surface planer or polishing by CMP until the superconductor film 210a on the protrusion 212 is removed and the height of the protrusion 212 and the superconductor film 210a reach a predetermined value. Here, CMP stands for Chemical Mechanical Polishing. This planarization process flattens and smoothes the upper end surface of the superconductor film 210a covering the side surface of the protrusion 212. This process processes the surface roughness of the upper end surface of the superconductor film 210a to, for example, Ra1 nm or less.

[0026] Next, as shown in FIG. 8, the buried layer 300 is removed, and the circuit board 200 in which the second electrode 210 has the protrusion 211 is completed.

[0027] Next, a method for manufacturing the superconducting device 1000 will be described. First, as shown in FIG. 9, the superconducting integrated circuit chip 100 and the circuit board 200 are placed in a vacuum chamber (not shown) with their bonding surfaces facing each other, and a vacuum is drawn. At this time, the superconducting integrated circuit chip 100 is fixed by a chip fixing jig 400. As a fixing method, a clamp method or an electrostatic chuck method can be applied. The circuit board 200 is also fixed by a substrate fixing jig 410, and a similar fixing method can be applied. The degree of vacuum in the chamber is, for example, 10 -6 A level of Pa is preferred.

[0028] 10, an activation device 500 is used to remove adsorbed matter and oxides on the surface of the first electrode 110, which will be the bonding portion of the superconducting integrated circuit chip 100, to activate the bonding portion. As the activation device 500, for example, a device that irradiates ions or a neutral atomic beam can be used. Similarly, the activation device 500 is used to remove adsorbed matter and oxides on the surface of the upper end surface 211a of the protrusion 211, which will be the bonding portion of the circuit board 200, to activate the bonding portion.

[0029] Next, as shown in FIG. 11, the superconducting integrated circuit chip 100 and the circuit board 200 are aligned so that the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 face each other. Then, while maintaining the degree of vacuum, the first electrode 110 and the upper surface 211a of the protrusion 211 are brought into contact with each other and pressure is applied. The temperature may be, for example, room temperature. At this time, the first superconducting material of the first electrode 110 and the second superconducting material of the upper surface 211a of the protrusion 211 form an amorphous layer at the bonding interface, and the two are firmly bonded together. Although not shown, for example, alignment marks may be provided on each of the superconducting integrated circuit chip 100 and the circuit board 200, and the positions may be adjusted using a transmission image taken by an infrared camera, thereby aligning the two.

[0030] As described above, according to this embodiment, it is possible to obtain the signal input / output characteristics as designed with non-contact coupling. The reason is that the second electrode of the circuit board has a protrusion of a predetermined height with a flat upper end surface, so that the non-contact coupling circuit of the superconducting integrated circuit chip and the non-contact coupling circuit on the circuit board can be mounted in a state of being positioned with high accuracy at a predetermined interval.

[0031] In addition, high bonding reliability and performance can be ensured. This is because the activation and bonding of the bonding surfaces in a vacuum allows the top surfaces of the first and second electrodes to be bonded without reoxidation. Furthermore, because bonding is performed at room temperature, there is no change in the state of the superconducting element due to heating or misalignment of the mounting position due to thermal expansion of the components, and high performance can be maintained.

[0032] Furthermore, when the first and second superconducting materials are the same material, high joint reliability can be ensured even in operation in an extremely low temperature environment. This is because the same superconducting materials are directly joined together. With this configuration, damage caused by stress resulting from differences in the thermal expansion coefficients of the components can be suppressed, particularly at the extremely low temperatures (10 mK) in which superconducting circuits are used.

[0033] Furthermore, stable electrical characteristics can be ensured because, by joining the same superconducting materials together, a compound layer that inhibits the superconducting characteristics is not generated at the joining interface.

[0034] (Third embodiment) In the second embodiment, it has been illustrated that the protrusions provided on the circuit board can be formed using metals such as copper, silver, gold, platinum, alloys containing these metals, etc. In the present embodiment, another method for forming the protrusions will be described.

[0035] FIG. 12 is a cross-sectional view showing the superconducting device 1100 of this embodiment. The circuit board 200a used in the superconducting device 1100 of this embodiment has a protrusion 212a formed of a substrate base material 201a. A thin film of the wiring part 230a and a film of the second electrode 210 are laminated to cover the side surface of the protrusion 212a, forming a protrusion 211. The upper end surface 211a of the protrusion 211, the upper end surface of the wiring part 230, and the upper surface of the protrusion 212a are flattened and smoothed by the same method as in the second embodiment. The upper end surface 211a of the second electrode 210 and the first electrode are joined. For example, silicon can be used as the substrate base material 201a. Various methods for performing three-dimensional processing with high accuracy have been developed for silicon, and the protrusion 212a can be formed with high accuracy by using these methods. The configuration and manufacturing method for joining the upper end surface 211a of the protrusion 211 and the first electrode 110 are the same as those in the second embodiment.

[0036] As in the second embodiment, the wiring portion 230a may be made of metal such as copper, silver, gold, platinum, or an alloy containing these metals. In order to ensure the adhesive strength between the second electrode 210 and the wiring portion 230, a base layer such as titanium or titanium nitride may be added. In order to increase the adhesiveness between the wiring portion 230a and the substrate base material 201a, the wiring portion 230a may have a base layer such as Ti.

[0037] According to this embodiment, by forming the protrusion 212a from the substrate base material 201a which is difficult to deform (has high rigidity) and forming the protrusion 211, it is possible to suppress deformation of the protrusion 211 due to pressure when mounting the superconducting integrated circuit chip 100. For example, silicon is a material which is less likely to deform than copper. With the above configuration, the distance between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 can be positioned with higher accuracy. As a result, it is possible to bring the input / output characteristics in non-contact coupling closer to the design values.

[0038] (Fourth embodiment) In this embodiment, a configuration that facilitates bonding between a first electrode and a second electrode will be described. In the second and third embodiments, an example was described in which the inner protrusion of the protrusion of the second electrode has a flat upper surface that is the same height as the protrusion. In this embodiment, a configuration will be described in which the upper surface of the protrusion has a recess that becomes lower toward the center.

[0039] FIG. 13 is a cross-sectional view showing a superconducting device 1200 of this embodiment. As shown in FIG. 13, the protrusion 212b arranged on the circuit board 200a of this embodiment has a concave upper surface 212c whose height decreases toward the center. Such a shape can be formed, for example, by using CMP for the planarization process described in the second embodiment and selecting an appropriate CMP slurry (abrasive). That is, it can be realized by selecting a slurry that removes the material of the protrusion 212b faster than the material of the second electrode 210. The phenomenon in which one material is removed more than another material in this way is called dishing, and is an undesirable phenomenon in general planarization. However, in this embodiment, the desired concave shape is obtained by using dishing.

[0040] By forming the upper surface 212c of the protrusion 212b into the above-mentioned concave shape, it is possible to reduce the pressure applied when bonding the upper surface 211a of the protrusion 211 of the second electrode 210 to the first electrode 110. This is because the area of ​​contact between the protrusion 211 and the first electrode 110 is reduced, and therefore the pressure applied per unit area is increased even if the same pressure is applied overall. By reducing the pressure applied during bonding, deformation of each member is suppressed, and the distance between the first non-contact coupling circuit 120 and the second non-contact coupling circuit 220 can be controlled with higher accuracy.

[0041] The present invention has been described above by taking the above-mentioned first to fourth embodiments as exemplary examples. However, the present invention is not limited to the above-mentioned embodiments. That is, the present invention can be applied in various aspects that can be understood by a person skilled in the art within the scope of the present invention.

[0042] A part or all of the above-described embodiments can be described as, but is not limited to, the following supplementary notes. (Appendix 1) a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof; a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof; having the second electrode has a cylindrical protrusion having a predetermined height and a flat upper end surface, a surface of the first electrode and an upper end surface of the protrusion of the second electrode are directly joined to each other; The first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite to each other. A superconducting device comprising: (Appendix 2) A protrusion made of a material different from the second superconducting material is disposed inside the second superconducting material in the protruding portion. 2. A superconducting device according to claim 1, (Appendix 3) The different material is the same material as the base material of the circuit board. 3. A superconducting device according to claim 2, (Appendix 4) The different material is a metal. 3. A superconducting device according to claim 2, (Appendix 5) The upper surface of the protrusion has a concave shape that decreases in height toward the center. 5. A superconducting device according to any one of claims 2 to 4. (Appendix 6) A joint between the first electrode and the protruding portion of the second electrode has an amorphous layer including the first superconducting material and the second superconducting material. 6. A superconducting device according to any one of claims 1 to 5. (Appendix 7) The arithmetic mean roughness Ra of the upper end surface of the protrusion is 1 nm or less. 7. A superconducting device according to any one of claims 1 to 6, (Appendix 8) The first electrode and the second electrode are ground electrodes. 8. A superconducting device according to any one of claims 1 to 7. (Appendix 9) At least one of the first superconducting material and the second superconducting material is niobium. 9. A superconducting device according to any one of claims 1 to 8, (Appendix 10) The first superconducting material and the second superconducting material are the same superconducting material. 10. A superconducting device according to any one of claims 1 to 9. (Appendix 11) A method for manufacturing a superconducting device having a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, comprising: A cylindrical protrusion having a predetermined height and a flat upper end surface is formed on the second electrode; directly bonding a surface of the first electrode and the upper end surface of the protrusion of the second electrode; The first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite each other. A method for manufacturing a superconducting device comprising the steps of: (Appendix 12) The superconducting integrated circuit chip and the circuit board are placed in a chamber with the first electrode and the second electrode facing each other; The chamber is evacuated, activating the first electrode and the top end surface of the protrusion of the second electrode; Aligning the first non-contact coupling circuit and the second non-contact coupling circuit so that they face each other; While maintaining the vacuum level of the chamber, the first electrode and the protrusion of the second electrode are brought into contact with each other and pressurized. 12. A method for producing a superconducting device according to claim 11, (Appendix 13) A protrusion is formed on the circuit board using a material different from the second superconducting material, and a layer of the second superconducting material is formed so as to cover a side surface of the protrusion. 13. A method for producing a superconducting device according to claim 11 or 12. (Appendix 14) The different material is the same material as the base material of the circuit board. 14. A method for producing a superconducting device according to claim 13. (Appendix 15) The different material is a metal. 14. A method for producing a superconducting device according to claim 13. (Appendix 16) The protrusion and the layer of the second superconducting material covering the protrusion are cut or polished to a predetermined height. 16. A method for manufacturing a superconducting device according to any one of claims 13 to 15. (Appendix 17) The upper surface of the protrusion is shaped so that its height decreases toward the center. 17. A method for producing a superconducting device according to claim 16, (Appendix 18) The arithmetic mean roughness Ra of the upper end surface of the protrusion is set to 1 nm or less. 18. A method for manufacturing a superconducting device according to any one of claims 11 to 17. (Appendix 19) At least one of the first superconducting material and the second superconducting material is niobium. 19. A method for manufacturing a superconducting device according to any one of claims 11 to 18. (Appendix 20) The first superconducting material and the second superconducting material are the same superconducting material. 20. A method for manufacturing a superconducting device according to any one of claims 11 to 19. [Explanation of symbols]

[0043] 1, 1000, 1100 Superconducting Device 10, 100 Superconducting integrated circuit chip 11, 110 first electrode 12, 120 First non-contact coupling circuit 20, 200 Circuit Board 21, 210 second electrode 21a, 211 protrusion 21b, 211a top end surface 22, 220 Second non-contact coupling circuit 101 Chip base material 201, 201a Substrate material 210a Superconductor film 212, 212a protrusion 230 Wiring section 300 Embedding Layer 400 Chip Fixture 410 Circuit Board Fixture 500 activation device

Claims

1. a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof; a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof; having the second electrode has a cylindrical protrusion having a predetermined height and a flat upper end surface, a surface of the first electrode and an upper end surface of the protrusion of the second electrode are directly joined to each other; the first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite to each other, A protrusion made of a material different from the second superconducting material is disposed inside the second superconducting material in the protruding portion. A superconducting device comprising:

2. The different material is the same material as the base material of the circuit board.

2. The superconducting device according to claim 1 .

3. The upper surface of the protrusion has a concave shape that decreases in height toward the center.

3. The superconducting device according to claim 2 .

4. A joint between the first electrode and the protruding portion of the second electrode has an amorphous layer including the first superconducting material and the second superconducting material.

4. A superconducting device according to claim 1, wherein the superconducting device comprises:

5. The arithmetic mean roughness Ra of the upper end surface of the protrusion is 1 nm or less.

5. A superconducting device according to claim 1, wherein the superconducting device comprises:

6. The first electrode and the second electrode are ground electrodes.

6. A superconducting device according to claim 1, wherein the superconducting device comprises:

7. The first superconducting material and the second superconducting material are the same superconducting material.

7. A superconducting device according to claim 1, wherein the superconducting device comprises:

8. A method for manufacturing a superconducting device having a superconducting integrated circuit chip having a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof, and a circuit board having a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, comprising: A cylindrical protrusion having a predetermined height and a flat upper end surface is formed on the second electrode; directly bonding a surface of the first electrode and the upper end surface of the protrusion of the second electrode; The first non-contact coupling circuit and the second non-contact coupling circuit are disposed opposite to each other, The protrusion is formed by laminating the second superconducting material on a protrusion made of a material different from the second superconducting material. A method for manufacturing a superconducting device comprising the steps of:

9. The superconducting integrated circuit chip and the circuit board are placed in a chamber with the first electrode and the second electrode facing each other; The chamber is evacuated, activating the first electrode and the top end surface of the protrusion of the second electrode; Aligning the first non-contact coupling circuit and the second non-contact coupling circuit so that they face each other; while maintaining the vacuum level of the chamber, the first electrode and the protrusion of the second electrode are brought into contact with each other and pressurized.

9. The method of claim 8, wherein the superconducting device is made of a material selected from the group consisting of fluororesin, ...rubber, and fluororesin.

Images