Light-emitting device, display device, photoelectric conversion device, electronic device, lighting device, and mobile object

Abstract

To provide a technique advantageous for preventing a reduction in the display quality of a light emitting device.SOLUTION: A light emitting device comprises: an insulating layer arranged on a principal surface of a substrate; a plurality of bottom electrodes arranged on the insulating layer; an organic layer arranged to cover the plurality of bottom electrodes; an upper electrode arranged to cover the organic layer; and a supply electrode supplying an electric potential to the upper electrode. The organic layer includes a plurality of function layers each including a light emitting layer, and a charge generation layer arranged between the plurality of function layers. The upper electrode includes a contact part in contact with the supply electrode. In orthogonal projection on the principal surface, the insulating layer includes grooves between the respective bottom electrodes and the contact part. The thickness of the charge generation layer in the grooves is made smaller than the thickness of the charge generation layer on the plurality of bottom electrodes.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving object. [Background technology]

[0002] There is growing interest in light-emitting devices using self-emitting elements such as organic electroluminescence (EL) elements. In order to perform color display in a light-emitting device, a method using a white-emitting light-emitting element and a color filter (white+CF method) is known. In addition to the white+CF method, Patent Document 1 shows a tandem-type organic EL display in which multiple light-emitting layers are stacked and a charge generating layer is disposed between the light-emitting layers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2018 / 0102499 Summary of the Invention [Problem to be solved by the invention]

[0004] The efficiency of the light-emitting device can be increased by using multiple light-emitting layers and charge-generating layers disposed between the light-emitting layers. However, since the charge-generating layers are highly conductive, there is a possibility that the display quality of the image may be degraded due to leakage current through the charge-generating layers.

[0005] An object of the present invention is to provide a technique that is advantageous in suppressing degradation of the display quality of a light-emitting device. [Means for solving the problem]

[0006] In view of the above problems, a light-emitting device according to an embodiment of the present invention is a light-emitting device comprising an insulating layer arranged on a main surface of a substrate, a plurality of lower electrodes arranged on the insulating layer, an organic layer arranged to cover the plurality of lower electrodes, an upper electrode arranged to cover the organic layer, and a supply electrode that supplies a potential to the upper electrode, wherein the organic layer comprises a plurality of functional layers each including a light-emitting layer, and a charge generating layer arranged between the plurality of functional layers, the upper electrode includes a contact portion in contact with the supply electrode, and in an orthogonal projection onto the main surface, the insulating layer has grooves between each of the plurality of lower electrodes and the contact portion, and the thickness of the charge generating layer in the grooves is thinner than the thickness of the charge generating layer on the plurality of lower electrodes. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous in suppressing deterioration of the display quality of a light emitting device. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view showing a configuration example of a light emitting device according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Diagram 3] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 4] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Diagram 5] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 6] 2A to 2C are diagrams illustrating a method for manufacturing the light emitting device of FIG. [Figure 7] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 8] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 9] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 10] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 11]FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 12] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 13] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 14] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 15] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 16] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 17] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 18] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Figure 19] FIG. 11 is a cross-sectional view showing a configuration example of a light emitting device of a comparative example. [Figure 20] FIG. 11 is a plan view showing a configuration example of a light emitting device of a comparative example. [Figure 21] 2A to 2C are diagrams illustrating a deposition simulation for forming the light-emitting device in FIG. 1. [Figure 22] 2A to 2C are diagrams illustrating the results of a deposition simulation performed when forming the light-emitting device of FIG. 1. [Diagram 23] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device in FIG. [Figure 24] FIG. 2 is a plan view showing a configuration example of the light emitting device in FIG. [Diagram 25] FIG. 1 is a diagram showing an example of a display device using the light-emitting device of this embodiment. [Figure 26] FIG. 1 is a diagram showing an example of a photoelectric conversion device using a light emitting device according to an embodiment of the present invention. [Figure 27] 1A to 1C are diagrams illustrating examples of electronic devices using the light-emitting device of this embodiment. [Figure 28] FIG. 1 is a diagram showing an example of a display device using the light-emitting device of this embodiment. [Figure 29] FIG. 1 is a diagram showing an example of a lighting device using the light-emitting device of the present embodiment. [Diagram 30] FIG. 1 is a diagram showing an example of a moving object using the light emitting device of the present embodiment. [Diagram 31] FIG. 1 is a diagram showing an example of a wearable device using the light emitting device of the present embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] A display device according to an embodiment of the present disclosure will be described with reference to Fig. 1 to Fig. 16. Fig. 1 is a plan view showing a configuration example of a light-emitting device 10 in this embodiment. Fig. 2 is an enlarged view of a part of a display region 3000 of the light-emitting device 10 shown in Fig. 1, and is a plan view in which three organic light-emitting elements 100 included in the display region 3000 are extracted. Fig. 3 is a cross-sectional view taken along line A-A' in the plan view shown in Fig. 2.

[0011] As shown in FIG. 1, the light-emitting device 10 includes a display area 3000 and an outer peripheral area 2000 provided around the display area 3000. The display area 3000 is an area in which light-emitting organic light-emitting elements 100 (which may also be called pixels or sub-pixels) are arranged, and may display images, characters, etc., or may be used as a light source for illumination as in an application example described later. A driving circuit for performing appropriate display in the display area 3000 may be arranged in the outer peripheral area 2000. In the configuration shown in FIG. 1, the outer peripheral area 2000 is arranged so as to surround the display area 3000, but is not limited to this. For example, the outer peripheral area 2000 may be provided along only one side of the display area 3000, or may be provided along two or three sides of the display area 3000.

[0012] The light emitting device 10 will be described in more detail with reference to Figs. 2 and 3. A plurality of organic light emitting elements 100 are arranged in a display region 3000 of the light emitting device 10. Here, when referring to a specific organic light emitting element among the plurality of organic light emitting elements 100, a subscript is added after the reference number, such as organic light emitting element 100 "a". When no particular distinction is required, the element will be referred to as "organic light emitting element 100". The same applies to other components.

[0013] The light emitting device 10 may include an insulating layer 30 disposed on the main surface 12 of the substrate 1, a plurality of lower electrodes 2 disposed on the insulating layer 30, an organic layer 40 disposed so as to cover the plurality of lower electrodes 2, an upper electrode 5 disposed so as to cover the organic layer 40, and a supply electrode 8 that supplies a potential to the upper electrode 5. A reflective layer 102 may be disposed between the main surface 12 of the substrate 1 and the insulating layer 30. The organic light emitting elements 100 may be positioned by the lower electrodes 2 that are disposed electrically independent of each other. Meanwhile, the organic layer 40 and the upper electrode 5 may be shared by a plurality of organic light emitting elements 100. One organic layer 40 and one upper electrode 5 may be disposed throughout the entire display area 3000. That is, the organic layer 40 may be integrally formed over the entire surface of the display area 3000 that displays an image of the light emitting device 10, etc. Similarly, the upper electrode 5 may be integrally formed over the entire surface of the display area 3000 that displays an image of the light emitting device 10, etc. The organic light emitting device 100 may be a self-emitting device such as an organic electroluminescent (EL) device.

[0014] The substrate 1 is made of a material capable of supporting each of the components, such as the lower electrode 2, the organic layer 40, and the upper electrode 5. For example, glass, plastic, silicon, etc. can be used as the substrate 1. On the substrate 1, a switching element (not shown), such as a transistor, a conductor 11, an interlayer insulating layer 22, etc. can be formed.

[0015] The lower electrode 2 of the organic light-emitting element 100 may transmit light emitted from the light-emitting layer of the organic layer 40. The lower electrode 2 may be made of a transparent conductive oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO). The lower electrode 2 may be made of a thin film of a metal such as aluminum (Al), silver (Ag), or platinum (Pt) or an alloy thereof. The film thickness of the lower electrode 2 may be different for each of the organic light-emitting elements 100a, 100b, and 100c. The organic light-emitting elements 100a, 100b, and 100c may each have a different optical resonator structure. The optical resonator structure may be configured by providing a light-reflecting layer under each lower electrode and providing each with an optical path of a different length.

[0016] The organic layer 40 is disposed on the lower electrode 2 of the organic light-emitting element 100. In this embodiment, the organic layer 40 is a so-called tandem type including a plurality of functional layers 41, 43 each including a light-emitting layer, and a charge generation layer 42 disposed between the functional layers 41 and 43. The number of functional layers is not limited to two, and three or more functional layers each including a light-emitting layer may be laminated. In addition, when three or more functional layers are laminated, a charge generation layer may be disposed between each functional layer. That is, the charge generation layer may be disposed between the light-emitting layer and another light-emitting layer. This is because the charge generation layer 42 is disposed between the functional layer 41 having a light-emitting layer and the functional layer 43 having another light-emitting layer.

[0017] The functional layers 41 and 43 are layers including at least a light-emitting layer, and may be composed of a plurality of layers. Examples of layers other than the light-emitting layer include a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer. In the functional layers 41 and 43, holes injected from the anode and electrons injected from the cathode are recombined in the light-emitting layer, so that light is emitted from the light-emitting layer. The light-emitting layer may have a single-layer structure or a multi-layer structure. The light-emitting layer may include a red light-emitting material, a green light-emitting material, and a blue light-emitting material, and it is also possible to obtain white light by mixing the respective light-emitting colors. The light-emitting layer may also include light-emitting materials of complementary colors, such as a blue light-emitting material and a yellow light-emitting material. For example, the light-emitting layer disposed in the functional layer 41 may include a red light-emitting material and a green light-emitting material, and the light-emitting layer disposed in the functional layer 43 may include a blue light-emitting material.

[0018] The charge generation layer 42 is a layer that contains an electron donating material and an electron accepting material and generates charges. The electron donating material and the electron accepting material are materials that donate electrons and accept electrons, respectively. As a result, positive and negative charges are generated in the charge generation layer 42, and the charge generation layer 42 can supply positive or negative charges to the functional layers 41 and 43 arranged above and below the charge generation layer 42.

[0019] The electron donating material may be, for example, an alkali metal such as lithium or cesium. The electron donating material may be, for example, lithium fluoride, a lithium complex, cesium carbonate, or a cesium complex. In this case, the electron donating property may be expressed by including a reducing material such as aluminum, magnesium, or calcium. The electron donating material may be a hole transporting material. As the hole transporting material, an organic compound such as a triarylamine derivative, a phenylenediamine derivative, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a pyrazoline derivative, a pyrazolone derivative, an oxazole derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, a phthalocyanine derivative, a porphyrin derivative, a poly(vinylcarbazole), a poly(silylene), a poly(thiophene), or other conductive polymer may be used. The electron donating material may be included in the electron transporting material. As the electron transporting material, organic compounds such as oxadiazole derivatives, thiazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, perylene derivatives, quinoline derivatives, quinoxaline derivatives, fluorenone derivatives, anthrone derivatives, phenanthroline derivatives, and organometallic complexes may be used. As the electron accepting material, inorganic substances such as transition metal oxides such as molybdenum oxide may be used, and organic substances such as [dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile] may be used. The charge generating layer may be a layer containing a mixture of an electron accepting material and an electron donating material. The charge generating layer may also be a layer in which a layer containing an electron accepting material and a layer containing an electron donating material are laminated. That is, the charge generating layer 42 may have a single layer structure or a multilayer structure.

[0020] The organic layer 40 can be formed by using a dry process such as a vacuum deposition method, an ionization deposition method, a sputtering method, or a plasma method. In addition, instead of a dry process, a wet process can be used in which the above-mentioned materials are dissolved in an appropriate solvent and the organic layer 40 is formed by using a known coating method (e.g., a spin coating method, a dipping method, a casting method, a Langmuir-Blodgett (LB method), an inkjet method, etc.). For example, when the organic layer 40 is formed by a vacuum deposition method or a coating method, the organic layer 40 is unlikely to crystallize, and an organic layer 40 with excellent stability over time can be obtained. In addition, for example, when the organic layer 40 is formed by a coating method, the organic layer 40 can be formed by combining with an appropriate binder resin.

[0021] Examples of binder resins include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin. However, the binder resin is not limited to these. In addition, these binder resins may be used alone as homopolymers or copolymers, or may be used in combination of two or more types. Furthermore, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.

[0022] The organic layer 40 is disposed between the lower electrode 2 and the upper electrode 5. As described above, the organic layer 40 may be continuously formed on the upper surface of the substrate 1 and shared by a plurality of organic light-emitting elements 100. Alternatively, all or a part of the organic layer 40 may be patterned for each organic light-emitting element 100. The organic layer 40 may be formed up to a part of the peripheral region 2000 disposed around the display region 3000.

[0023] The upper electrode 5 transmits light emitted from the light-emitting layer disposed in the organic layer 40. The upper electrode 5 may be made of a semi-transparent material having a property of transmitting a part of the light that reaches its surface and reflecting the other part (i.e., semi-transparent reflectivity). For the upper electrode 5, for example, a transparent conductive oxide such as ITO or IZO, an elemental metal such as Al, Ag, or gold (Au), an alkali metal such as lithium (Li) or cesium (Cs), an alkaline earth metal such as magnesium (Mg), calcium (Ca), or barium (Ba), or an alloy material containing these metal materials may be used. An alloy containing Mg or Ag as a main component may be used as the semi-transparent material. Here, the main component may be the component with the highest mass % concentration among the materials contained in each component. The upper electrode 5 may have a laminated structure in which layers using the above-mentioned materials are laminated, as long as it has an appropriate transmittance. The upper electrode 5 may be continuously formed on the upper surface of the substrate 1 as described above, and may be shared by a plurality of organic light-emitting elements 100. Similarly to the organic layer 40, the upper electrode 5 may be formed up to a part of the outer peripheral region 2000 arranged around the display region 3000. In this case, as will be described later, the upper electrode 5 may be arranged beyond the organic layer 40 in the outer peripheral region 2000. In the organic light-emitting element 100, the lower electrode 2 may be an anode and the upper electrode 5 may be a cathode. Alternatively, the lower electrode 2 may be a cathode and the upper electrode 5 may be an anode.

[0024] As shown in FIG. 3, an insulating layer 3 may be provided so as to cover the outer periphery of the lower electrode 2. The insulating layer 3 has an opening so as to expose a part of the lower electrode 2, and defines a light-emitting region 101 where the lower electrode 2 and the organic layer 40 are in contact with each other. The insulating layer 3 may be formed to accurately form the light-emitting region 101 into a desired shape. When the insulating layer 3 is not provided, the light-emitting region 101 is defined by the shape of the lower electrode 2. The insulating layer 3 may be formed of an inorganic material such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO). The insulating layer 3 may be formed by a known technique such as a sputtering method or a chemical vapor deposition method (CVD method). The insulating layer 3 may also be formed by using an organic material such as an acrylic resin or a polyimide resin.

[0025] The display region 3000 of the light-emitting device 10 may further include a protective layer 6 arranged to cover the upper electrode 5, a planarization layer 7 arranged to cover the protective layer 6, and a color filter 121 and a microlens 122 arranged on the planarization layer 7. The protective layer 6 protects each component arranged on the substrate 1 side from moisture in the air. The protective layer 6 may be formed of an inorganic material such as SiN, SiON, or SiO. The protective layer 6 may also be formed of an organic material such as various resins. The protective layer 6 may also have a laminated structure of these. The planarization layer 7 is arranged to suppress steps caused by differences in thickness of the insulating layer 30 described later. The planarization layer 7 may be formed of an inorganic material such as the above, or may be formed of an organic material. The color filter 121 transmits light of a color corresponding to the optical interference caused by the thickness of the insulating layer 30. For example, the color filter 121a may transmit red light, the color filter 121b may transmit green light, and the color filter 121c may transmit blue light. The microlens 122 improves the efficiency of use of light emitted from the light-emitting layer included in the organic layer 40. The color filter 121 and the microlens 122 may be formed using a known film formation method. In addition, an appropriate layer such as a planarization layer may be disposed between the color filter 121 and the microlens 122.

[0026] In this embodiment, the organic light-emitting element 100 is provided with a laminated section 104 including a reflective layer 102. The laminated section 104 includes a reflective region 105, and the reflective layer 102 is provided in the reflective region 105. In an orthogonal projection onto the main surface 12 of the substrate 1, the reflective layer 102 is provided so as to overlap the light-emitting region 101 of the lower electrode 2. In addition, an electrolytic corrosion suppression layer 103 is formed on the reflective layer 102. In at least a part of the region overlapping the light-emitting region 101 in an orthogonal projection onto the main surface 12 of the substrate 1, the electrolytic corrosion suppression layer 103 of the laminated section 104 has an opening so that the reflective layer 102 is exposed. With this configuration, the light emitted by the light-emitting layer provided in the organic layer 40 passes through the lower electrode 2 and is efficiently reflected by the reflective layer 102. The size of the opening of the electrolytic corrosion suppression layer 103 may be the same size as the light-emitting region 101 or may be larger than the light-emitting region 101 from the viewpoint of improving the light-emitting efficiency. In the configuration shown in FIG. 3, in orthogonal projection onto main surface 12 of substrate 1, light emitting region 101 is disposed to overlap with an opening in electrolytic corrosion suppression layer 103, and the size of the opening in electrolytic corrosion suppression layer 103 is larger than that of light emitting region 101.

[0027] Since the light reflected by the reflective layer 102 is extracted to the light emission side from the upper electrode 5, the light emitting device 10 of this embodiment can obtain high light emitting efficiency. Here, the light emission side refers to the side of the upper electrode 5 relative to the lower electrode 2.

[0028] For example, Ag or Al having a high reflectance may be used for the reflective layer 102. For example, cobalt (Co), molybdenum (Mo), Pt, tantalum (Ta), titanium (Ti), titanium nitride (TiN), tungsten (W), or the like may be used for the electrolytic corrosion suppression layer 103. The reflective layer 102 and the electrolytic corrosion suppression layer 103 may be alloys or compounds. For example, a material containing Al as a main component may be used for the reflective layer 102, and a material containing Ti or TiN as a main component may be used for the electrolytic corrosion suppression layer 103. Furthermore, the reflective layer 102 may contain Al as a main component and copper (Cu). Furthermore, the electrolytic corrosion suppression layer 103 may contain TiN as a main component. Furthermore, a barrier metal such as Ti or TiN may be provided on the substrate 1 side of the laminated portion 104.

[0029] The reflective layer 102 and the electrolytic corrosion suppression layer 103 can be formed by using a known film formation method such as a sputtering method, a CVD method, or an atomic layer deposition method (ALD method). The reflective layer 102 can be formed by forming a film of a highly reflective material on the substrate 1, and then patterning the film using a known etching process. The electrolytic corrosion suppression layer 103 can also be formed by forming a film of a material on the substrate 1, and then patterning the film using a known etching process. The opening of the electrolytic corrosion suppression layer 103 provided in the laminated portion 104 can be formed by removing the electrolytic corrosion suppression layer 103 using a known etching process.

[0030] In this embodiment, an insulating layer 30 that functions as an optical interference layer is disposed between the reflective layer 102 of the laminated portion 104 and the lower electrode 2. By adjusting the thickness of the insulating layer 30, it is possible to optimize the optical distance between the light-emitting layer included in the organic layer 40 of the organic light-emitting element 100 and the reflective layer 102. This makes it possible to improve the light-emitting efficiency of the light-emitting device 10 that utilizes optical interference. The insulating layer 30 may have a single-layer structure or a laminated structure including multiple layers.

[0031] As shown in FIG. 3, the plurality of lower electrodes 2 include lower electrodes 2a and 2b adjacent to each other. The plurality of lower electrodes 2 also include lower electrodes 2b and 2c adjacent to each other. In this case, the thickness of the insulating layer 30 between the reflective layer 102a and the lower electrode 2a arranged in the organic light-emitting element 100a in the insulating layer 30 is different from the thickness of the insulating layer 30 between the reflective layer 102b and the lower electrode 2b arranged in the organic light-emitting element 100b in the insulating layer 30. In addition, the thickness of the insulating layer 30 between the reflective layer 102b and the lower electrode 2b arranged in the organic light-emitting element 100b in the insulating layer 30 is different from the thickness of the insulating layer 30 between the reflective layer 102c and the lower electrode 2c arranged in the organic light-emitting element 100c in the insulating layer 30. Furthermore, as shown in FIG. 3, the thickness of the insulating layer 30 between the reflective layer 102a and the lower electrode 2a arranged in the organic light-emitting element 100a and the thickness of the insulating layer 30 between the reflective layer 102c and the lower electrode 2c arranged in the organic light-emitting element 100c may be different from each other.

[0032] By making the thicknesses of the insulating layers 30 of the organic light emitting elements 100a, 100b, and 100c different from each other, it is possible to adjust the color of the light emitted from each of the organic light emitting elements 100a to 100c. The insulating layer 30 may have a laminated structure of a plurality of layers. For example, when the insulating layers 30 are made thinner in the order of the organic light emitting elements 100a, 100b, and 100c, insulating layers 31, 32, and 33 are provided as the insulating layer 30 between the reflective layer 102a and the lower electrode 2a of the organic light emitting element 100a. In addition, insulating layers 32 and 33 are provided between the reflective layer 102b and the lower electrode 2b of the organic light emitting element 100b, and further insulating layer 33 is provided between the reflective layer 102c and the lower electrode 2c of the organic light emitting element 100c. This allows the insulating layer 30 to be formed as an optical adjustment layer.

[0033] The insulating layer 30 may be made of a material that is transparent to the light emitted from the light-emitting layer disposed in the organic layer 40. For example, SiO, SiN, SiON, or the like may be used as the insulating layer 30 (insulating layers 31 to 33). In this case, the insulating layer may be formed using a known technique such as a sputtering method, a CVD method, or an ALD method.

[0034] 2 and 3, the laminated portion 104 may have a pixel contact region 115 that is insulated from the reflective region 105 and includes a conductive pattern 112 electrically connected to the lower electrode 2. The lower electrode 2 and the pixel contact region 115 (conductive pattern 112) may be electrically connected. This allows the organic light-emitting element 100 to supply a potential (for example, power) to the lower electrode 2 via the conductive pattern 112. For example, a signal corresponding to the emission intensity of the organic light-emitting element 100 is supplied to the lower electrode 2.

[0035] The pixel contact region 115 may use the same layers as the reflective layer 102 and the electrolytic corrosion suppression layer 103 of the reflective region 105. That is, between each of the multiple lower electrodes 2 and the main surface 12 of the substrate 1, a conductive pattern 112 electrically connected to each of the multiple lower electrodes 2 may be disposed, and the distance from the main surface 12 to the reflective layer 102 may be the same as the distance from the main surface 12 to the conductive pattern 112. In this case, the pixel contact region 115 includes the conductive pattern 112 in the same layer as the reflective layer 102 and the electrolytic corrosion suppression layer 113 in the same layer as the electrolytic corrosion suppression layer 103. Therefore, the main component of the reflective layer 102 and the main component of the conductive pattern 112 may be the same. Similarly, the main component of the electrolytic corrosion suppression layer 103 and the main component of the electrolytic corrosion suppression layer 113 may be the same.

[0036] When the insulating layer 30 is provided, a via hole is provided in the insulating layer 30, and a conductor 11 is formed in the via hole, thereby electrically connecting the lower electrode 2 and the pixel contact region 115. The conductor 11 may be made of the same material as the lower electrode 2. Also, a known conductive material such as W, Ti, or TiN can be used for the conductor 11. Also, the lower electrode 2 and the pixel contact region 115 may be in contact with each other through a via hole. In order to suppress electrolytic corrosion, an electrolytic corrosion suppression layer 113 may be provided in the portion of the pixel contact region 115 that contacts the conductor 11.

[0037] 2 and 3, the region in which the conductor 11 is disposed may be, for example, a pixel contact region 115 in which the electrolytic corrosion suppression layer 113 of the laminated portion 104 is located. When the pixel contact region 115 and the lower electrode 2 are in direct contact with each other, the reliability of the light emitting device 10 is improved if the electrolytic corrosion suppression layer 113 and the lower electrode 2 are a combination that is unlikely to cause galvanic corrosion. For example, a material containing TiN as a main component may be used for the electrolytic corrosion suppression layer 113, and ITO or IZO may be used for the lower electrode 2 (conductor 11).

[0038] 3 shows an organic light-emitting element 100 using an insulating layer 30 and a reflective layer 102 that function as an optical interference layer, but the present invention is not limited to this. The insulating layer 30 may have the same thickness among the organic light-emitting elements 100a to 100c. In this case, the reflective layer 102 may not be provided, and the lower electrode 2 may be formed of a material having light reflectivity.

[0039] In the configuration shown in Fig. 3, a supply electrode 8 for supplying a potential to the upper electrode 5 is disposed in the display region 3000. Fig. 4 is an enlarged view of a portion B surrounded by a dotted line in Fig. 3. The upper electrode 5 includes a contact portion 51 in contact with the supply electrode 8. The supply electrode 8 is a conductor in contact with the upper electrode 5, and is electrically connected to the reflective layer 102. This causes the upper electrode 5 and the reflective layer 102 to have the same potential (for example, ground potential).

[0040] The supply electrode 8 can electrically connect between the upper electrode 5 and a power supply unit for supplying power to each organic light emitting element 100, using the reflective layer 102 as a wiring pattern. Therefore, there is no need to form a wiring pattern for electrically connecting to the upper electrode 5 in the same layer as the reflective layer 102, separately from the reflective layer 102. As a result, this is advantageous for miniaturizing (high definition) the display area 3000. In addition, since the reflective layer 102 can be used as a wiring pattern, the manufacturing process can be simplified compared to the case where a separate wiring pattern is formed in the same layer as the reflective layer 102.

[0041] As a result, the current flows not only through the upper electrode 5 but also through the supply electrode 8 and the reflective layer 102 to reach the power supply unit. Therefore, compared to when the current flows only through the upper electrode 5, the resistance is lower and a voltage drop is less likely to occur.

[0042] As shown in FIG. 3, in this embodiment, in the orthogonal projection onto the main surface 12 of the substrate 1, the light-emitting device 10 has a portion where the charge generation layer 42 is thinned between each of the plurality of lower electrodes 2 and the contact portion 51. More specifically, in the orthogonal projection onto the main surface 12 of the substrate 1, the insulating layer 30 has a groove 9 between each of the plurality of lower electrodes 2 and the contact portion 51. A part of the charge generation layer 42 is immersed in the groove 9, so that the charge generation layer 42 is thinned in the groove 9 as shown in FIG. 4. Here, the thinning of the charge generation layer 42 indicates that the thickness of the charge generation layer 42 is thinner based on the thickness of the charge generation layer 42 in the portion (light-emitting region 101) of the organic layer 40 that contacts the lower electrode 2. Therefore, it can be said that the thickness of the charge generation layer 42 in the groove 9 is thinner than the thickness of the charge generation layer 42 on the plurality of lower electrodes 2. The reference for the thickness of the charge generation layer 42 may be the thickness of a portion of the charge generation layer 42 extending in a direction parallel to the surface of the lower electrode 2 on the light emitting region 101. However, the reference for the thickness of the charge generation layer 42 is not limited to this. If the charge generation layer 42 is formed on a relatively flat portion of the base (e.g., the functional layer 41) and has a uniform thickness, this portion may be used as the reference for the thickness of the charge generation layer 42. For example, the portion of the charge generation layer 42 with a uniform thickness at the periphery of the groove 9 may be used as the reference for the thickness of the charge generation layer 42.

[0043] The thinned portion of the charge generation layer 42 may be concave like the groove 9 shown in Figures 3 and 4, or may be convex with a protruding portion of the insulating layer 30. However, when the manufacturing process is taken into consideration, a concave shape like the groove 9 is suitable. This is because one inner wall of the groove 9 prevents material particles of the charge generation layer from entering the groove 9 in the process of forming the charge generation layer 42, making it difficult for the material particles to accumulate on the other opposing inner wall, and the thickness of the charge generation layer 42 is likely to become thin.

[0044] In the groove 9, the charge generation layer 42 is thinned. As shown in FIG. 4, in the vicinity of the contact portion 51 of the upper electrode 5, the charge generation layer 42 may be in contact with the supply electrode 8. In addition, in the vicinity of the contact portion 51 of the upper electrode 5, the charge generation layer 42 may be in close proximity to or in contact with the upper electrode 5. This may cause a leak current to flow between the charge generation layer 42 and the upper electrode 5. On the other hand, in this embodiment, the charge generation layer 42 is thinned in the groove 9, so that the charge generation layer 42 has a high resistance. This suppresses the leak current between the charge generation layer 42 and the upper electrode 5. As a result, the luminous efficiency of the organic light-emitting element 100 is increased, and it is possible to suppress a decrease in display quality.

[0045] 2 and 3, in the orthogonal projection onto the main surface 12 of the substrate 1, the contact portion 51 of the upper electrode 5 that contacts the supply electrode 8 may be disposed between the lower electrode 2a of the organic light-emitting element 100a and the lower electrode 2b of the organic light-emitting element 100b. In this case, the contact portion 51 may be at least partially surrounded by the groove 9. As shown in FIG. 2, the contact portion 51 may be completely surrounded by the groove 9. This makes it possible to more reliably suppress a path through which a leak current flows between the upper electrode 5 and the charge generation layer 42.

[0046] The supply electrode 8 may be disposed inside a region where the organic layer 40 is formed in an orthogonal projection onto the main surface 12 of the substrate 1. Generally, in a light-emitting device 10 such as a fine organic EL device, the organic layer 40 is formed integrally over the entire surface of the display region 3000. This is because a method of separating an organic layer formation region for each organic light-emitting element 100 (each pixel) requires a fine film formation process, and thus the yield is likely to decrease due to effects such as misalignment of the film formation position.

[0047] When the organic layer 40 is integrally formed over the entire display area 3000, the organic layer 40 is likely to be an obstacle when electrically connecting the upper electrode 5 and the supply electrode 8. On the other hand, as shown in Figs. 3 and 4, the supply electrode 8 is disposed in a concave shape such as a via hole in the portion of the supply electrode 8 that contacts the upper electrode 5. Due to the concave shape, a part of the inner wall of the supply electrode 8 along the side wall of the via hole is covered with the organic layer 40. In other words, a part of the inner wall of the supply electrode 8 along the side wall of the via hole is not formed with the organic layer 40. The upper electrode 5 contacts the region of the inner wall of the supply electrode 8 along the side wall of the via hole that is not covered with the organic layer 40 (contact portion 51). This allows the upper electrode 5 to be electrically connected to the supply electrode 8.

[0048] The supply electrode 8 can be formed by patterning the same conductive film using an etching process when the lower electrode 2 is formed. Therefore, the main component of the lower electrode 2 and the main component of the supply electrode 8 may be the same. In addition, similar to the connection between the lower electrode 2 and the conductive pattern 112 described above, the reflective layer 102 and the supply electrode 8 may be electrically connected to each other via an electrolytic corrosion suppression layer 103 for suppressing electrolytic corrosion between the reflective layer 102 and the supply electrode 8.

[0049] 2 and 3, the light emitting device 10 includes a supply electrode 8 between the organic light emitting element 100a and the organic light emitting element 100b, but the present invention is not limited to this. For example, a supply electrode 8 surrounded by a groove 9 may also be provided between the organic light emitting element 100b and the organic light emitting element 100c. At least one supply electrode 8 may be provided within the display region 3000. For example, a supply electrode 8 may be provided for every predetermined number of organic light emitting elements 100.

[0050] 4, the organic layer 40 may cover the upper end 82 of the inner wall 81 of the supply electrode 8 along the side wall 141 of the via hole 14. By covering the upper end 82 of the inner wall 81 of the supply electrode 8 with the organic layer 40, it is possible to prevent the upper electrode 5 disposed on the organic layer 40 from becoming thin at a portion where the upper electrode 5 bends from a direction parallel to the main surface 12 of the substrate 1 toward the inside of the via hole 14 of the supply electrode 8, and further, to prevent the upper electrode 5 from being partially not formed. As a result, it is possible to prevent the operating voltage of the light emitting device 10 from becoming high due to an increase in the resistance value of the upper electrode 5.

[0051] When a general semiconductor process is used, the upper end 142 of the side wall 141 of the via hole 14 has an angular shape. In addition, the upper end 82 of the inner wall 81 of the supply electrode 8 formed so as to cover the via hole 14 is likely to have an angular shape. If the organic layer 40 is formed so as not to be formed on the inner wall 81 of the supply electrode 8, the shape of the upper electrode 5 will change suddenly at the portion where the upper electrode 5 bends toward the inner wall 81 of the supply electrode 8, and there is a high possibility that the upper electrode 5 will become thin.

[0052] On the other hand, in this embodiment, the organic layer 40 is formed on the upper end 82 of the angular inner wall 81 of the supply electrode 8, so that the upper surface of the organic layer 40 has a curved shape. Therefore, the change in the shape of the upper electrode 5 becomes gentle, and the upper electrode 5 is prevented from becoming thin or being partially not formed.

[0053] Moreover, the effect of the organic layer 40 covering a part of the inner wall 81 including the upper end 82 of the inner wall 81 of the supply electrode 8 is to improve the moisture blocking property of the protective layer 6. Consider a case where the protective layer 6 is formed on an angular shape such as the upper end 82 of the inner wall 81 of the supply electrode 8. In this case, in the growth process of the protective layer 6, the protective layer 6 is likely to be low-densified in a region where a part of the protective layer 6 growing on the inner wall 81 of the supply electrode 8 and a part of the protective layer 6 growing on the upper surface of the supply electrode 8 meet. Since the low-density region of the protective layer 6 reaches the lower part of the protective layer 6, moisture is likely to penetrate into the organic layer 40 through the low-density region. On the other hand, in this embodiment, the organic layer 40 covers a part of the inner wall 81 including the upper end 82 of the inner wall 81 of the supply electrode 8, so that the upper surface of the organic layer 40 has a curved shape and a structure in which the inclination angle changes continuously. Therefore, the protective layers 6 grown on different inclination angles are continuously met, and the formation of a low-density region of the protective layer 6 is suppressed.

[0054] Here, the length D between the opposing upper sides of the upper ends 82 of the supply electrode 8 may be greater than twice the thickness C of the organic layer 40. This prevents the inside of the inner wall 81 of the supply electrode 8 from being embedded in the organic layer 40, and makes it easier to bring the upper electrode 5 and the supply electrode 8 into contact with each other.

[0055] The multiple functional layers 41, 43 included in the organic layer 40 include a functional layer 41 in contact with the lower electrode 2. In this case, the length E between the opposing upper sides 92 of the groove 9 may be more than twice the thickness of the portion of the functional layer 41 in contact with the lower electrode 2. Although the portion of the functional layer 41 in contact with the lower electrode 2 is not shown in FIG. 4, the thickness F shown in the portion of the functional layer 41 arranged outside the groove 9 is close to the thickness of the portion of the functional layer 41 in contact with the lower electrode 2. This prevents the inner wall 91 of the groove 9 from being embedded by the functional layer 41. In other words, it is possible to prevent the charge generation layer 42 from being immersed in the groove 9 and becoming thin.

[0056] Furthermore, the length E between the opposing upper sides 92 of the grooves 9 may be shorter than the depth G of the grooves 9. This makes it difficult for material particles of the charge generation layer 42 to enter the grooves 9 when the charge generation layer 42 is formed, and the charge generation layer 42 can be easily thinned.

[0057] The portion of the charge generation layer 42 recessed in the groove 9 may include a portion having a thickness half or less of the portion of the charge generation layer 42 disposed on the lower electrode 2. The thickness of the charge generation layer 42 in the groove 9 is the thickness in the normal direction to the surface of each portion of the charge generation layer 42. Furthermore, not only is the charge generation layer 42 thinner in the groove 9, but the portion of the charge generation layer 42 recessed in the groove 9 may include a discontinuous portion. The continuity of the charge generation layer 42 is lost, and a portion where the charge generation layer 42 is not formed is generated, so that the resistance of the charge generation layer 42 in the groove 9 can be made higher.

[0058] On the other hand, the functional layer 43 may be formed so as to cover the grooves 9. This makes it easier for the upper electrode 5 disposed on the functional layer 43 to be formed continuously on the grooves 9 without being embedded in the grooves 9. As a result, it is possible to prevent the upper electrode 5 from becoming highly resistant due to the grooves 9.

[0059] The length D between the opposing upper sides of the upper ends 82 of the supply electrode 8, the length E between the opposing upper sides 92 of the grooves 9, and the thickness C of the organic layer 40 may have a relationship of D>(2×C)>E. This makes the organic layer 40 discontinuous at the supply electrode 8, brings the upper electrode 5 and the supply electrode 8 into contact, and makes it difficult for the organic layer 40 to become discontinuous at the grooves 9. As a result, the upper electrode 5 reaches the supply electrode 8 without being discontinuous at the grooves 9, and a current can flow between the upper electrode 5 and the supply electrode 8.

[0060] 5(a) to 5(c), a method for manufacturing the light emitting device 10 will be described below. Note that, since each step up to the formation of the insulating layer 30 can be similar to the steps for forming a general light emitting device including an organic light emitting element, a description thereof will be omitted here.

[0061] After forming the insulating layer 30, via holes 13 and 14 are formed penetrating the insulating layer 30 as shown in FIG. 5(a). Next, a conductive member is formed by using a sputtering method or the like. At this time, in the via hole 14, the conductive member only covers the side wall 141 of the via hole 14, but does not fill the via hole 14. Next, by patterning using a photolithography method or the like, the lower electrode 2, the supply electrode 8, and further the groove 9 are formed from the conductive member as shown in FIG. 5(b). The depth of the groove 9 can be controlled by controlling the etching time during patterning.

[0062] Next, the insulating layer 3 is formed by using a sputtering method or the like, and patterned by using a photolithography method or the like. At this time, it is necessary to expose the supply electrode 8 formed in the via hole 14. In other words, it is necessary to etch the insulating layer 3 formed on the inner wall 81 of the supply electrode 8. Therefore, isotropic dry etching or wet etching may be used in the process of etching the insulating layer 3. By this process, the insulating layer 3 is formed as shown in FIG. 5(c).

[0063] Next, a method for forming the organic layer 40 and the upper electrode 5 will be described with reference to FIGS. 6(a) and 6(b). FIG. 6(a) is a diagram showing the positional relationship between the deposition sources 201, 202 and the substrate 1 when the organic layer 40 and the upper electrode 5 are formed. The substrate 1 rotates when the organic layer 40 and the upper electrode 5 are formed. The deposition source 202 for forming the organic layer 40 and the deposition source 201 for forming the upper electrode 5 are both disposed at a distance R from the center of rotation of the substrate 1 in a direction parallel to the main surface 12 of the substrate 1. The deposition source 202 for forming the organic layer 40 is disposed at a distance i from the center of rotation of the substrate 1 in a direction perpendicular to the main surface 12 of the substrate 1. The deposition source 201 for forming the upper electrode 5 is disposed at a distance h from the center of rotation of the substrate 1 in a direction perpendicular to the main surface 12 of the substrate 1. At this time, the distance i is shorter than the distance h. That is, the deposition source 202 for forming the organic layer 40 is disposed closer to the substrate 1 than the deposition source 201 for forming the upper electrode 5. In FIG. 6(a), the deposition source 201 and the deposition source 202 are depicted as being disposed in one deposition apparatus (chamber) for the sake of explanation. However, FIG. 6(a) is a diagram for illustrating the positional relationship between the substrate 1 and the deposition sources 201 and 202 when the organic layer 40 and the upper electrode 5 are formed. Therefore, the deposition source 201 and the deposition source 202 may be disposed in separate deposition apparatuses (chambers) or may be disposed in the same deposition apparatus (chamber).

[0064] FIG. 6(b) is an enlarged view of the light-emitting device 10 formed up to the step of FIG. 5(a) at a position 204 (see FIG. 6(a)) at a distance r from the center of rotation of the substrate 1. The structure described with reference to FIG. 6(a) makes the incidence angle 205 of the deposition material from the deposition source 201 for forming the upper electrode 5 different from the incidence angle 206 of the deposition material from the deposition source 202 for forming the organic layer 40. This allows the deposition material of the upper electrode 5 to reach a position 207 deeper than a position 208 that is the limit of the depth at which the deposition material of the organic layer 40 enters the via hole 14. This allows the upper electrode 5 to contact the inner wall 81 of the supply electrode 8. Here, the deposition method is used as the method for forming the organic layer 40, but the organic layer 40 may be formed by, for example, a laser ablation method or the like. After the organic layer 40 and the upper electrode 5 are formed, the protective layer 6 and the like are formed in sequence. Since each of these steps can be similar to the steps for forming a general light-emitting device having an organic light-emitting element, a description thereof will be omitted here.

[0065] Fig. 7 is a diagram showing a modified example of the configuration shown in Fig. 2. In the configuration shown in Fig. 7, in an orthogonal projection onto the main surface 12 of the substrate 1, the portions (light-emitting regions 101) of the organic layer 40 that are in contact with the plurality of lower electrodes 2 are each at least partially surrounded by grooves 9. As shown in Fig. 7, the grooves 9 may completely surround the light-emitting region 101. Here, the light-emitting region 101 is disposed on the inner side than the electrolytic corrosion suppression layer 103 as shown in Fig. 3. The configuration other than the arrangement of the grooves 9 may be the same as the configurations shown in Figs. 2 and 3.

[0066] The groove 9 surrounding the light-emitting region 101 can suppress not only leakage current between the upper electrode 5 and the charge generation layer 42, but also leakage current through the charge generation layer 42 between adjacent organic light-emitting elements 100. This can suppress color mixing between adjacent organic light-emitting elements 100, achieving high color purity and improving the display quality of the light-emitting device 10. In the configuration shown in Fig. 7, the supply electrode 8 is not surrounded by the groove 9 in the orthogonal projection onto the main surface 12 of the substrate 1, but the groove 9 may be further disposed so as to surround the contact portion 51 (supply electrode 8).

[0067] FIG. 8 is a diagram showing a modified example of the configuration shown in FIG. 2. In the configuration shown in FIG. 8, the organic light-emitting element 100b is changed to a potential supplying section 200, and a supplying electrode 8 is disposed at the center of the potential supplying section 200, in comparison with the configuration shown in FIG. 2. The other configurations may be the same as those shown in FIGS. 2 and 3 described above. In the potential supplying section 200, an opening in the electrolytic corrosion suppressing layer 103d is not formed, and the lower electrode 2, the opening in the insulating layer 3 (light-emitting region 101), the conductor 11, the conductive pattern 112, and the electrolytic corrosion suppressing layer 113 may not be formed. In the configuration shown in FIG. 8, the contact section 51 (supplying electrode 8) is surrounded by the groove 9, so that the leakage current between the upper electrode 5 and the charge generating layer 42 can be suppressed in the same manner as described above.

[0068] Since the potential supply unit 200 does not necessarily need to include a component required for the light emission of the light-emitting layer, it is easy to create a space for arranging the supply electrode 8. Therefore, the configuration shown in FIG.

[0069] 8, when the organic light-emitting elements 100 (sub-pixels) emit four colors of light, namely, red, green, blue, and white, the white-emitting organic light-emitting element 100 may be used as the potential supply unit 200. This is because white light can be output using the red, green, and blue organic light-emitting elements 100. At least one potential supply unit 200 may be provided within the display region 3000. For example, a potential supply unit 200 may be provided for every predetermined number of organic light-emitting elements 100.

[0070] Here, in the configuration shown in Figures 2 and 3, the distance between the centers of the lower electrode 2a of the organic light emitting element 100a and the lower electrode 2b of the organic light emitting element 100b, between which the supply electrode 8 is arranged, is the same as the distance between the centers of the lower electrode 2b of the organic light emitting element 100b and the lower electrode 2c of the organic light emitting element 100c, between which the supply electrode 8 is not arranged. On the other hand, in the configuration shown in Figure 7, the distance between the centers of the lower electrode 2a of the organic light emitting element 100a and the lower electrode 2c of the organic light emitting element 100c, between which the supply electrode 8 is arranged, may be longer than the distance between the centers of the lower electrode 2 of the organic light emitting element 100 and the lower electrode 2 of the organic light emitting element 100, between which the supply electrode 8 is not arranged. For example, the distance between the centers of the lower electrode 2a of the organic light emitting element 100a and the lower electrode 2c of the organic light emitting element 100c, between which the supply electrode 8 is arranged, may be twice the distance between the centers of the lower electrodes of the organic light emitting element 100, between which the supply electrode 8 is not arranged.

[0071] 9(a) to 9(c) are diagrams showing a configuration of a light emitting device 10 including a potential supply section 200 at a position different from that shown in Fig. 8. In the configuration shown in Fig. 8, an example has been described in which the potential supply section 200 is arranged between the organic light emitting elements 100 arranged in the display region 3000. However, the potential supply section 200 may be arranged in the peripheral region 2000.

[0072] The boundary line 4000 shown in FIG. 9(a) is a line indicating the boundary between the display area 3000 and the peripheral area 2000. As described above, in the orthogonal projection onto the main surface 12 of the substrate 1, the organic layer 40 and the upper electrode 5 are arranged up to the peripheral area 2000 outside the display area 3000 in which the plurality of lower electrodes 2 are arranged. In this case, in the orthogonal projection onto the main surface 12 of the substrate 1, the contact section 51 may be arranged in the area of ​​the peripheral area 2000 in which the organic layer 40 is arranged, and may be at least partially surrounded by the groove 9. As shown in FIG. 9(a), the groove 9 may completely surround the contact section 51. Here, a structure having a shape similar to that of the lower electrode 2 of the display area 3000 may be arranged in the peripheral area 2000 (such as the dummy area 500 described later), but in the case of a configuration in which a signal is not supplied to the structure as in the case of the lower electrode 2, such a structure is not referred to as the lower electrode 2 in the present disclosure. For example, when a wiring pattern is not electrically connected to the structure, the light-emitting layer disposed in the organic layer 40 cannot emit light.

[0073] In the light emitting device 10, the upper electrode 5 may be disposed outside the organic layer 40 in the peripheral region 2000, and the supply electrode 8 (contact portion 51) may be provided outside the formation region of the organic layer 40. In contrast, in the configuration shown in FIG. 9(a), the supply electrode 8 is provided within the formation region of the organic layer 40, so that the chip size can be reduced. This allows, for example, more chips to be obtained from one wafer, and the cost per chip can be reduced. In the configuration shown in FIG. 9(a), the contact portion 51 is surrounded by the groove 9, so that the leakage current between the upper electrode 5 and the charge generating layer 42 can be suppressed in the same manner as described above.

[0074] As shown in FIG. 9(b), the potential supply unit 200 (contact unit 51) may be arranged in the peripheral region 2000, and the portion (light-emitting region 101) of the organic layer 40 that contacts the lower electrode 2 may be surrounded by the groove 9 in the orthogonal projection onto the main surface 12 of the substrate 1. This can suppress leakage current between the organic light-emitting elements 100, similar to the configuration shown in FIG. 7. Also, as shown in FIG. 9(c), the potential supply unit 200 (contact unit 51) may be arranged in the peripheral region 2000, and the groove 9 may be arranged along the boundary line 4000. For example, the display region 3000 may be at least partially surrounded by the groove 9, or the groove 9 may completely surround the display region 3000. Also, the configurations of FIGS. 9(a) to 9(c) may be used in combination, or may be combined with the above-mentioned configurations. For example, the contact unit 51 may be arranged in both the display region 3000 and the peripheral region 2000.

[0075] A configuration different from the above-mentioned configurations of the light emitting device 10 will be described with reference to Fig. 10 to Fig. 12. Fig. 10 is a plan view showing an example of the configuration of the light emitting device 10 in this embodiment. Fig. 11 and Fig. 12 are cross-sectional views taken along lines BB' and CC' in Fig. 10, respectively.

[0076] As shown in FIGS. 10 to 12, in the orthogonal projection onto the main surface 12 of the substrate 1, the organic layer 40 and the upper electrode 5 are arranged up to the outer peripheral region 2000 outside the display region 3000 in which the plurality of lower electrodes 2 are arranged, and the upper electrode 5 is arranged further outside the organic layer 40 in the outer peripheral region 2000. At this time, the contact portion 51 of the upper electrode 5 that contacts the supply electrode 8 is arranged in a region of the outer peripheral region 2000 that is outside the organic layer 40, and the display region 3000 is at least partially surrounded by the groove 9. The groove 9 may completely surround the display region 3000. It can also be said that the groove 9 is arranged between the contact portion 51 where the upper electrode 5 contacts the supply electrode 8 and the light-emitting region 101 where the organic layer 40 and the lower electrode 2 of the organic light-emitting element 100 on the outermost periphery of the display region 3000 contact each other.

[0077] At the end of the formation region of the organic layer 40, the charge generation layer 42 and the upper electrode 5 may come into contact as shown in FIG. 11 and FIG. 12, but since the charge generation layer 42 is made highly resistant in the groove 9, the leakage current between the upper electrode 5 and the charge generation layer 42 can be suppressed. In other words, the deterioration of the display quality in the display region 3000 can be suppressed. If the groove 9 is not provided, it is necessary to arrange the formation region of the functional layer 43 so that it continues to the outside of the formation region of the charge generation layer 42 so that the charge generation layer 42 and the upper electrode 5 do not come into contact with each other. In this embodiment, the formation regions of each layer of the organic layer 40 can be made the same, so that the chip size can be reduced accordingly. This makes it possible to obtain many chips from one wafer, thereby reducing the cost per chip.

[0078] 10 to 12, the contact portion 51 (supply electrode 8) of the upper electrode 5 is not provided in the display region 3000. However, this is not limited to this, and in addition to the configurations shown in Fig. 10 to 12, the contact portion 51 (supply electrode 8) may be provided in the display region 3000 as in each of the configurations shown in Fig. 2 to 8. In that case, the groove 9 is also provided in the display region 3000 as in each of the configurations shown in Fig. 2 to 8.

[0079] In the configuration shown in FIG. 10 to FIG. 12, a dummy region 500 is provided in the peripheral region 2000. A laminated portion 504 is disposed in the dummy region 500. The laminated portion 504 may include a reflective layer 502 having the same main component as the reflective layer 102 of the laminated portion 104 between the interlayer insulating layer 22 and the insulating layer 30, and an electrolytic corrosion suppression layer 503 having the same main component as the electrolytic corrosion suppression layer 103 between the reflective layer 502 and the insulating layer 30. By disposing the dummy region 500, a structure having at least a part of the same configuration as the organic light-emitting element 100 disposed in the display region 3000 is disposed in a region adjacent to the display region 3000. Thereby, manufacturing variations of the organic light-emitting element 100 in the display region 3000 are suppressed. For example, as shown in FIGS. 11 and 12, in the dummy region 500, a structure equivalent to the lower electrode 2, an insulating layer 30, an organic layer 40, an upper electrode 5, and the like can be formed in the same manner as in the display region 3000.

[0080] The laminated portion 504 of the dummy region 500 may be electrically insulated from the laminated portion 104. In addition, in the organic light-emitting element 100, when the pixel contact region 115 is electrically insulated from the reflective region 105, the laminated portion 504 of the dummy region 500 and the reflective region 105 of the display region 3000 may be electrically connected as shown in FIG.

[0081] The laminated portion 504 can be formed at the same time as the laminated portion 104. From the viewpoint of suppressing process variations during film formation and patterning of the reflective layers 102, 502 and the electrolytic corrosion suppression layers 103, 503, the distance between the laminated portion 104 and the substrate 1 may be substantially the same as the distance between the laminated portion 504 and the substrate 1. Furthermore, the reflective layers 102 and 502 may have substantially the same film thickness, and the electrolytic corrosion suppression layers 103 and 503 may have substantially the same film thickness.

[0082] In the configuration shown in Figs. 10 to 12, an upper electrode contact region 600 is provided in the outer peripheral region 2000. A laminated portion 604 is disposed in the upper electrode contact region 600. The laminated portion 604 may include a reflective layer 602 having the same main component as the reflective layer 102 of the laminated portion 104 between the interlayer insulating layer 22 and the insulating layer 30, and an electrolytic corrosion suppression layer 603 having the same main component as the electrolytic corrosion suppression layer 103 between the reflective layer 602 and the insulating layer 30. The upper electrode contact region 600 is a region in electrical contact with the upper electrode 5. The upper electrode 5 and the laminated portion 604 may be in direct contact with each other, or a member that relays electrical connection may be provided between the upper electrode 5 and the laminated portion 604. 11 and 12, by disposing a supply electrode 8 made of the same material as the main component of the plug 606 and the lower electrode 2 on the laminated portion 604 of the upper electrode contact region 600, it is possible to electrically connect the upper electrode 5 and the laminated portion 604. The plug 606 may be made of the same material as the supply electrode 8, or may be made of other materials such as W, TiN, or Ti.

[0083] 12, in the organic light-emitting element 100, when the pixel contact region 115 is electrically insulated from the reflective region 105, the laminated portion 604 of the upper electrode contact region 600 and the reflective region 105 of the display region 3000 may be electrically connected. In such a case, the upper electrode 5 and the reflective region 105 have the same potential. Furthermore, in the organic light-emitting element 100, when the pixel contact region 115 is electrically insulated from the reflective region 105, the laminated portion 604 of the upper electrode contact region 600, the laminated portion 504 of the dummy region 500, and the reflective region 105 of the display region 3000 may be electrically connected. In this case, the potentials of the upper electrode 5, the laminated portion 604, the laminated portion 504, and the reflective region 105 are the same.

[0084] The laminated portion 604 can be formed at the same time as the laminated portion 104. In other words, the laminated portion 604 can be formed at the same time as the laminated portion 104 and the laminated portion 504. From the viewpoint of suppressing process variations during film formation and patterning of the reflective layers 102, 602 and the electrolytic corrosion suppression layers 103, 603, the distance between the laminated portion 104 and the substrate 1 may be substantially the same as the distance between the laminated portion 604 and the substrate 1. Furthermore, the film thicknesses of the reflective layers 102 and 602 may be substantially the same, and the film thicknesses of the electrolytic corrosion suppression layers 103 and 603 may be substantially the same.

[0085] In the configuration shown in Figs. 10 to 12, a wiring region 700 is provided in the outer peripheral region 2000. A laminated portion 704 is disposed in the wiring region 700. The laminated portion 704 may include a reflective layer 702 having the same main component as the reflective layer 102 of the laminated portion 104 between the interlayer insulating layer 22 and the insulating layer 30, and an electrolytic corrosion suppression layer 703 having the same main component as the electrolytic corrosion suppression layer 103 between the reflective layer 702 and the insulating layer 30. The wiring region 700 is a region in which the laminated portion 704 electrically insulated from the upper electrode 5 is used as a wiring pattern. The use of the wiring pattern is not particularly limited.

[0086] The laminated portion 704 can be formed at the same time as the laminated portion 104. In other words, the laminated portion 704 can be formed at the same time as the laminated portion 104, the laminated portion 504, and the laminated portion 604. From the viewpoint of suppressing process variations during film formation and patterning of the reflective layers 102, 702 and the electrolytic corrosion suppression layers 103, 703, the distance between the laminated portion 104 and the substrate 1 may be substantially the same as the distance between the laminated portion 704 and the substrate 1. Furthermore, the film thicknesses of the reflective layers 102 and 702 may be substantially the same, and the film thicknesses of the electrolytic corrosion suppression layers 103 and 703 may be substantially the same.

[0087] In the configurations shown in FIGS. 10 to 12, a moisture-proof region 800 is provided in the outer peripheral region 2000. A laminated portion 804 is provided in the moisture-proof region 800. The laminated portion 804 may include a reflective layer 802 having the same main component as the reflective layer 102 of the laminated portion 104 between the interlayer insulating layer 22 and the insulating layer 30, and an electrolytic corrosion suppression layer 803 having the same main component as the electrolytic corrosion suppression layer 103 between the reflective layer 802 and the insulating layer 30. The moisture-proof region 800 is provided in the outermost periphery of the light-emitting device 10, and is provided for the purpose of preventing moisture from entering from the periphery of the light-emitting device 10. Therefore, from the viewpoint of moisture resistance, the laminated portion 804 may be continuously formed in the outermost periphery of the light-emitting device 10. In addition, in the moisture-proof region 800, a plug 805 provided between the laminated portion 804 and the substrate 1 and a plug 806 provided on the laminated portion 804 may be continuously formed in the outermost periphery of the light-emitting device 10. Furthermore, an adhesion portion 807 may be formed continuously on the outermost periphery of the light emitting device 10 on the upper part of the plug 806. When the protective layer 6 is disposed, the protective layer 6 and the adhesion portion 807 may be in contact with each other. The adhesion portion 807 may be formed of a material having the same main component as the lower electrode 2. In other words, the adhesion portion 807 may be formed simultaneously with the lower electrode 2.

[0088] The laminated portion 804 can be formed at the same time as the laminated portion 104 is formed. In other words, the laminated portion 804 can be formed at the same time as the laminated portion 104, the laminated portion 504, the laminated portion 604, and the laminated portion 704. From the viewpoint of suppressing process variations during film formation and patterning of the reflective layers 102, 802 and the electrolytic corrosion suppression layers 103, 803, the distance between the laminated portion 104 and the substrate 1 may be substantially the same as the distance between the laminated portion 804 and the substrate 1. Furthermore, the film thicknesses of the reflective layers 102 and 802 may be substantially the same, and the film thicknesses of the electrolytic corrosion suppression layers 103 and 803 may be substantially the same.

[0089] 13 to 15 are diagrams showing modified examples of the light emitting device 10 described with reference to FIGS. 10 to 12. FIG. 13 is a plan view showing a configuration example of the light emitting device 10 in this embodiment. FIG. 14 is a cross-sectional view showing a configuration example of the light emitting device 10 in this embodiment. FIG. 15 is a diagram showing a modified example of the cross-sectional view of FIG. 14.

[0090] In the configurations shown in Figs. 13 to 15, similarly to the configurations shown in Figs. 10 to 12, in the orthogonal projection onto the main surface 12 of the substrate 1, the contact portion 51 of the upper electrode 5 that contacts the supply electrode 8 is disposed in a region of the outer peripheral region 2000 that is outside the organic layer 40. Meanwhile, in the configurations shown in Figs. 10 to 12, the groove 9 is disposed so as to surround the display region 3000, but in the configurations shown in Figs. 13 to 15, the groove 9 is disposed so as to surround the portion of the organic layer 40 that contacts the lower electrode 2 (the light-emitting region 101). As a result, similarly to the configuration shown in Fig. 7 described above, not only the leakage current between the upper electrode 5 and the charge generation layer 42 but also the leakage current through the charge generation layer 42 between the organic light-emitting elements 100 adjacent to each other can be suppressed. Therefore, it is possible to suppress color mixing between the organic light-emitting elements 100 adjacent to each other, and high color purity is realized.

[0091] As shown in Fig. 14, the charge generation layer 42 may be in contact with the upper electrode 5 in the peripheral region 2000. Also, as shown in Fig. 15, the charge generation layer 42 may be in contact with the upper electrode 5 and the supply electrode 8 in the peripheral region 2000. This makes the upper electrode 5 and the charge generation layer 42 have the same potential outside the groove 9 arranged for each organic light-emitting element 100 (the side opposite the light-emitting region 101 of the groove 9 in orthogonal projection onto the main surface 12 of the substrate 1). This makes it possible to suppress leakage current caused by the functional layer 43 arranged between the upper electrode 5 and the charge generation layer 42.

[0092] So far, it has been explained that the grooves 9 in the organic layer 40 into which the charge generation layer 42 is immersed are provided to increase the resistance of the charge generation layer 42 and suppress the leakage current caused by the provision of the charge generation layer 42. However, the suppression of the leakage current caused by the provision of the charge generation layer 42 is not limited to the thinning of the charge generation layer 42 using the grooves 9.

[0093] FIG. 16 is a diagram for explaining a light-emitting device 10 including an electric field application electrode 901 for suppressing a leakage current caused by disposing the charge generation layer 42 instead of the groove 9. As shown in FIG. 16, an electric field application electrode 901 for applying an electric field to the charge generation layer 42 is disposed between the insulating layer 30 and the organic layer 40, and between each of the lower electrodes 2 and the contact portion 51 in the orthogonal projection onto the main surface 12 of the substrate 1. A predetermined potential is supplied to the electric field application electrode 901 via a plug 904, an electrolytic corrosion suppression layer 903, a reflective layer 902, and a plug 905. Other configurations may be the same as those of the light-emitting device 10 described above, and therefore will not be described here.

[0094] In the configuration shown in FIG. 16, a predetermined potential is supplied to the electric field application electrode 901, thereby applying an electric field between the electric field application electrode 901 and the upper electrode 5. The electric field applied between the electric field application electrode 901 and the upper electrode 5 promotes charge recombination of the charges flowing from the region where the lower electrode 2 and the organic layer 40 contact each other through the organic layer 40, making it difficult for the charges to reach the supply electrode 8. This not only suppresses the leakage current caused by the highly conductive charge generation layer 42 being disposed in the organic layer 40, but also suppresses the leakage current caused by the functional layers 41 and 43. During the operation of the light-emitting device 10, a voltage equal to or higher than the light emission threshold of the light-emitting layer disposed in the organic layer 40 may be applied between the electric field application electrode 901 and the upper electrode 5. This makes it easier to promote charge recombination by the electric field.

[0095] The electric field application electrode 901 can be disposed in the same position as the above-described groove 9. Also, the electric field application electrode 901 and the groove 9 may be used in combination. Even when the electric field application electrode 901 is used, it is possible to suppress leakage current as in the above-described configurations, and suppress deterioration in the display quality of the light emitting device 10.

[0096] By providing the groove 9, when the charge generation layer 42 is thinned, not only the charge generation layer 42 but also the organic layer 40 including the functional layers 41 and 43 can be thinned. When the organic layer 40 is thinned, a leakage current between the lower electrode 2 and the upper electrode 5 through the thinned portion of the organic layer 40 may easily occur. Hereinafter, a modified example of the above-mentioned light-emitting device 10 for suppressing the leakage current between the lower electrode 2 and the upper electrode 5 through the organic layer 40 will be described with reference to FIGS. 17 and 18. FIG. 17 is a cross-sectional view showing a configuration example of the light-emitting device 10 in this embodiment, and FIG. 18 is a plan view showing a configuration example of the light-emitting device 10. FIG. 17 is a cross-sectional view between A-A' shown in FIG. 18.

[0097] As shown in Fig. 17, the surface of the insulating layer 3 facing the organic layer 40 has inclined portions 34, 35 inclined with respect to the main surface 12 of the substrate 1. The inclined portions 34, 35 may form side walls of a groove 36 provided in the surface of the insulating layer 3. The groove 36 may be provided only in the insulating layer 3 as shown in Fig. 17. Furthermore, for example, the groove 36 may be provided in the insulating layer 3 and the insulating layer 30. Furthermore, for example, the groove 36 may have the same configuration as the groove 9 described above.

[0098] As described above, in the organic layer 40, the charge generation layer 42 is more likely to be formed thinner in the portions of the insulating layer 3 arranged on the inclined portions 34 and 35 than in the flat portions parallel to the main surface 13 of the substrate 1. This makes it possible to increase the resistance of the charge generation layer 42. As a result, crosstalk current between the organic light-emitting elements 100 can be suppressed.

[0099] However, the thickness of the organic layer 40 is also reduced in the portions of the organic layer 40 disposed on the inclined portions 34 and 35 of the insulating layer 3. This may increase the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40. Therefore, as shown in FIG. 17, a conductive layer is disposed between the main surface 12 of the substrate 1 and the inclined portions 34 and 35 (groove 36) so as to overlap the inclined portions 34 and 35 (groove 36) in the orthogonal projection onto the main surface 12 of the substrate 1. In this embodiment, the reflective layer 102 and the electrolytic corrosion suppression layer 103 disposed in the reflective region 105 function as a conductive layer. The conductive layer (the reflective layer 102 and the electrolytic corrosion suppression layer 103 disposed in the reflective region 105) is not electrically connected to any of the lower electrodes 2.

[0100] The reflective region 105 may be electrically connected to the upper electrode 5 via the laminated portion 604, the plug 606, and the supply electrode 8, as in the reflective region 105a shown in FIG. 17. That is, the potential of the conductive layer disposed between the main surface 12 of the substrate 1 and the inclined portions 34, 35 (groove 36) may be the same as the potential of the upper electrode 5. Also, as shown in FIG. 18, the reflective regions 105 corresponding to the organic light-emitting elements 100 may be electrically connected to each other. Thereby, the potential of the reflective region 105 functioning as the conductive layer closest to the inclined portions 34, 35, which is disposed at a position overlapping the inclined portions 34, 35 in the orthogonal projection onto the main surface 12 of the substrate 1, becomes the same as the potential of the upper electrode 5.

[0101] The conductive layer (the reflective layer 102 and the electrolytic corrosion suppression layer 103 arranged in the reflective region 105) has the same potential as the upper electrode 5. This can weaken the electric field strength in the direction B applied to the organic layer 40 laminated on the inclined portions 34 and 35, so that the leakage current between the lower electrode 2 and the upper electrode 5 through the organic layer 40 can be suppressed. This is because, first, the electric field in the direction B applied to the organic layer 40 promotes charge separation in the charge generation layer 42 and generates charges. When there is a lot of charge in the thin organic layer 40 formed on the inclined portions 34 and 35, the charge flows through the thin organic layer 40 to the opposing electrode without recombining, and becomes a source of leakage current between the lower electrode 2 and the upper electrode 5. By weakening the electric field strength in the direction B, the leakage current between the lower electrode 2 and the upper electrode 5 through the organic layer 40 is suppressed. Here, the electric field in the direction B is illustrated as an example of the direction of the electric field that promotes leakage current when the lower electrode 2 is an anode and the upper electrode 5 is a cathode. When the lower electrode 2 is a cathode and the upper electrode 5 is an anode, the orientation of direction B is downward, opposite to that shown in FIG.

[0102] Although the reflective region 105 functioning as a conductive layer has the same potential as the upper electrode 5 as described above, the potential of the conductive layer is not limited to being the same potential as the upper electrode 5. For example, the conductive layer (reflective region 105) may be in a floating state. Also, for example, the conductive layer (reflective region 105) may be connected to a predetermined power source, and a predetermined potential may be supplied from the power source to the conductive layer. Specifically, the effect of suppressing the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40 is achieved if the potential relationship is as follows:

[0103] When the lower electrode 2 is an anode and the upper electrode 5 is a cathode, the potential of the conductive layer (reflective region 105) is set lower than that of the lower electrode 2. In other words, the potential of the conductive layer is V and the potential of the lower electrode is V D In this case, V < V D ... (1) Thereby, the potential difference between the upper electrode 5 and the conductive layer (reflective region 105) becomes smaller than the potential difference between the lower electrode 2 and the upper electrode 5. As a result, the electric field strength in the portions of the organic layer 40 disposed on the inclined portions 34 and 35 is improved in a direction that suppresses the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40.

[0104] In addition, when the lower electrode 2 is a cathode and the upper electrode 5 is an anode, the potential of the conductive layer (reflective region 105) is set higher than that of the lower electrode 2. In other words, the potential of the conductive layer is V and the potential of the lower electrode is V D In this case, V > V D (2) Thereby, the potential difference between the upper electrode 5 and the conductive layer (reflective region 105) becomes larger than the potential difference between the lower electrode 2 and the upper electrode 5. As a result, the electric field strength in the portions of the organic layer 40 disposed on the inclined portions 34 and 35 is improved in a direction that suppresses the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40.

[0105] The difference between the potential of the conductive layer (reflective region 105) and the potential of the upper electrode 5 may be smaller than the difference between the potential of the conductive layer and the potential of the lower electrode 2. This can reduce the electric field strength applied between the upper electrode 5 and the conductive layer. For example, the difference between the potential of the conductive layer and the potential of the upper electrode 5 may be 1 V or less. Furthermore, as described above, the potential of the conductive layer 12 and the potential of the upper electrode 5 may be the same potential.

[0106] 17 shows a top-emission type light-emitting device 10 in which light is extracted on the side opposite to the substrate 1 with respect to the organic layer 40. However, even in a bottom-emission type light-emitting device in which light is extracted on the side of the substrate 1, the electrode on the substrate 1 side with respect to the organic layer 40 can be considered as the lower electrode 2, and the electrode on the opposite side to the substrate 1 can be considered as the upper electrode 5. In other words, even in a bottom-emission type light-emitting device, the same effects as those described above can be obtained by providing the inclined portions 34, 35 and the conductive layer.

[0107] As a comparative example, consider a light emitting device 19 as shown in FIG. 19 and FIG. 20. FIG. 19 is a cross-sectional view of the light emitting device 19 of the comparative example, and FIG. 20 is a plan view of the light emitting device 19. FIG. 19 is a cross-sectional view taken along the line A-A' in FIG. 20. In the light emitting device 19, the reflective regions 105 are connected to the lower electrodes 2, and are arranged electrically independent for each organic light emitting element 100. In addition, the reflective regions 105 are not electrically connected to the stacked portion 604, which is electrically connected to the upper electrode 5. In this case, when a potential difference is applied between the lower electrode 2 and the upper electrode 5 to cause the organic light emitting element 100a to emit light, an electric field in the direction B is also applied to the portions of the organic layer 40 that are arranged on the inclined portion 34 and the inclined portion 35. Due to this electric field, the leakage current between the lower electrode 2 and the upper electrode 5 is likely to increase in the light emitting device 19 of the comparative example. On the other hand, in the light-emitting device 10 of this embodiment, in which the reflective region 105 is set to a potential closer to the upper electrode 5 than the lower electrode 2, it is possible to suppress leakage current between the lower electrode 2 and the upper electrode 5 while suppressing crosstalk between the organic light-emitting elements 100.

[0108] The inclined portions 34 and 35 arranged on the surface of the insulating layer 3 may be arranged along the periphery of the lower electrode 2 (light-emitting region 101) so as to surround the lower electrode 2 (light-emitting region 101). As described above, the inclined portions 34 and 35 may form the side walls of the groove 36. The groove 36 may be provided so as to surround each of the plurality of lower electrodes 2 (light-emitting regions 101). When the groove 36 has opposing inclinations such as the inclined portions 34 and 35 as a part thereof, the organic compound particles during the formation of the organic layer 40 are hindered by the insulating layer 3 having one of the inclined portions, and are less likely to reach the other inclined portion. This can make the charge generation layer 42 thinner. As a result, the crosstalk current between the light-emitting elements 100 can be suppressed.

[0109] When the groove 36 including the inclined portions 34 and 35 is provided, a part of the charge generating layer 42 may be embedded in the groove 36 as shown in Fig. 17. In other words, at least a part of the charge generating layer 42 may be provided below (toward the substrate 1) the upper end of the opening of the groove 36. This makes it easier to make the charge generating layer 42 thinner.

[0110] The width of the upper end of the groove 36 may be wider than the thickness of the portion of the organic layer 40 that is in contact with the lower electrode 2 of the functional layer 41. For example, the width of the upper end of the groove 36 may be wider than twice the thickness of the portion of the functional layer 41 that is in contact with the lower electrode 2. This makes it difficult for the opening of the groove 36 to be sealed by the functional layer 41, and the charge generation layer 42 may be easily immersed in the groove 36 and thinned. In addition, the depth of the groove 36 may be deeper than the thickness of the portion of the functional layer 41 that is in contact with the lower electrode. This makes it easy for the charge generation layer 42 to be immersed in the groove 36 and thinned.

[0111] The depth of the groove 36 may be deeper than the thickness of the lower electrode 2, for example. This allows the charge generation layer 42 to sink into the groove 36, making it easier for the charge generation layer 42 to be thinned. On the other hand, the depth of the groove 36 may be shallower than the thickness of the lower electrode 2. This prevents the organic layer 40 from becoming too thin, and can suppress leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40. The depth of the groove 36 may be set appropriately depending on the characteristics of the crosstalk current between the light-emitting elements 100 and the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40.

[0112] In this embodiment, the lower electrode 2 has a light-transmitting property, and has an insulating layer 30 functioning as an optical adjustment layer below the lower electrode, and a reflective layer 102 is disposed between the insulating layer 30 and the main surface 13 of the substrate 1. The thickness of the insulating layer 30 functioning as an optical adjustment layer is adjusted according to the color emitted from each light-emitting element 100. As a result, even when the organic layer 40 is a common layer across a plurality of light-emitting elements 100, the light-emitting efficiency of each light-emitting element 100 can be improved. When an insulating layer 30 having a different thickness according to the emission color of the light-emitting element 100 is used, an inclined portion other than the inclined portions 34 and 35 is likely to be disposed on the upper surface of the insulating layer 3. Therefore, the organic layer 40 is likely to be thinned even in the portions other than the inclined portions 34 and 35, and a leak current is likely to flow between the lower electrode 2 and the upper electrode 5 via the organic layer 40. Therefore, the effect of disposing the inclined portions 34 and 35 and the conductive layer described above is increased.

[0113] An end of the lower electrode 2 may be disposed between an end of the opening of the electrolytic corrosion suppression layer 103 and an end of the light-emitting region 101. This makes it possible to reduce the electric field strength at the inclined portion of the insulating layer 3, which is formed by reflecting the shape of the end of the electrolytic corrosion suppression layer 103. As a result, it is possible to suppress leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40.

[0114] Next, a film formation simulation by a vapor deposition method for obtaining information on the inclination angles of the inclined portions 34 and 35 will be described. Fig. 21 is a layout diagram of each member in the vapor deposition simulation. The positional relationship between the vapor deposition source 201 for the organic layer 40, the substrate 1, and the light emitting element 100 disposed on the substrate 1 was set as shown in Fig. 21. Here, R=200 mm, r=95 mm, and h=340 mm.

[0115] The deposition distribution N, expressed by the following formula (3), was set to N=2. Φ=Φ0COS N A (3) Here, A is the angle of inclination of the light-emitting element 100, Φ is the vapor flow density at angle A, and Φ0 is the vapor flow density when A = 0. In addition, it is assumed that the substrate 1 rotates around the axis of its center, as shown in FIG.

[0116] Assuming that there are inclined portions 34, 35 with inclination angles of 0° to 90° at the position of the light-emitting element 100 on the substrate 1, the thickness of the organic layer 40 formed on the inclined portions 34, 35 at each inclination angle was calculated when the thickness of the organic layer at an inclination angle of 0° was set to 76 nm.

[0117] FIG. 22 shows the results of the deposition simulation. From the results shown in FIG. 22, when the inclination angle is 50° or more, the layer thickness of the organic layer 40 formed on the inclined portions 34, 35 tends to be thin. On the other hand, when the inclination angle is smaller than 50°, it can be seen that the layer thickness of the organic layer 40 formed on the inclined portions 34, 35 tends to be thick. Therefore, the angle of the inclined portions 34, 35 with respect to a virtual plane parallel to the main surface 13 of the substrate 1 may be 50° or more. In addition, there is no particular upper limit to the inclination angle, and for example, the inclined portions 34, 35 may be inversely tapered. For example, the angle of the inclined portions 34, 35 with respect to a virtual plane parallel to the main surface 13 of the substrate 1 may be 50° or more and less than 180°. Thereby, it is possible to thin the charge generation layer 42, and the crosstalk current between the light-emitting elements 100 can be suppressed.

[0118] The distance between the light emitting regions 101 of the light emitting elements 100 (the pitch at which the light emitting elements 100 are arranged) may be, for example, within 10 mm, and may also be within 5 mm. In such a high-definition pixel arrangement, crosstalk current between the light emitting elements 100 tends to be large. Therefore, the effect of providing the above-mentioned inclined portions 34, 35 and the conductive layer can be significant.

[0119] Figures 23 and 24 are diagrams showing modified examples of the light emitting device 10 described with reference to Figures 17 and 18. Figure 23 is a cross-sectional view showing an example of the configuration of the light emitting device 10 in this embodiment, and Figure 24 is a plan view showing an example of the configuration of the light emitting device 10. Figure 23 shows a cross section taken along line A-A' shown in Figure 24.

[0120] In this embodiment, as shown in Figs. 23 and 24, a conductive layer 405 is disposed between the main surface 12 of the substrate 1 and the inclined portions 34, 35 (grooves 36) provided in the insulating layer 3 so as to overlap the inclined portions 34, 35 (grooves 36) in orthogonal projection onto the main surface 12 of the substrate 1. In addition, compared to the configurations shown in Figs. 17 and 18, the pixel contact region 115 is not disposed, and the reflective region 105 and the lower electrode 2 are electrically connected via the plug 11. As shown in Fig. 23, for example, the reflective region 105a is electrically connected to the lower electrode 2a, and the reflective region 105 is connected to a corresponding lower electrode 2 disposed in the same light-emitting element 100 among the multiple lower electrodes 2. The other configurations may be the same as those shown in Figs. 17 and 18 described above, so that the following description will focus on the differences.

[0121] In this embodiment, similarly to the case where the reflective region 105 is used as the conductive layer described above, the potential of the conductive layer 405 is set lower than that of the lower electrode 2 when the lower electrode 2 is an anode and the upper electrode 5 is a cathode. Also, the potential of the conductive layer 405 is set higher than that of the lower electrode 2 when the lower electrode 2 is a cathode and the upper electrode 5 is an anode. The difference between the potential of the conductive layer 405 and the potential of the upper electrode 5 may be smaller than the difference between the potential of the conductive layer 405 and the potential of the lower electrode 2. This may reduce the electric field strength applied between the upper electrode 5 and the conductive layer 12. For example, the difference between the potential of the conductive layer 405 and the potential of the upper electrode 5 may be 1 V or less. Furthermore, the potential of the conductive layer 405 and the potential of the upper electrode 5 may be the same potential. In that case, the conductive layer 405 may be electrically connected to the upper electrode 5. In this embodiment, the conductive layer 405 is not electrically connected to the reflective region 105 constituted by the lower electrode 2, the reflective layer 102, and the electrolytic corrosion suppression layer 103. Furthermore, a part of the laminated portion 604 may function similarly to the conductive layer 405 that is set to a potential closer to that of the upper electrode 5 than to that of the lower electrode 2, as shown in FIG.

[0122] In the configuration shown in FIG. 24, the thickness of the insulating layer 30 arranged between the lower electrode 2c of the organic light-emitting element 100c and the reflective area 105c is thinner than the thickness of the insulating layer 30 arranged between the lower electrodes 2a, 2b and the reflective areas 105a, 105b of the organic light-emitting elements 100a, 100b. Therefore, due to a potential difference between the lower electrode 2c and the reflective area 105c, the insulating layer 30 arranged between the lower electrode 2c and the reflective area 105c may be more likely to undergo dielectric breakdown than other parts. In this embodiment, the lower electrode 2c has the same potential as the reflective area 105c, so that dielectric breakdown of the insulating layer 30 (insulating layer 33) between the lower electrode 2c and the reflective area 105c is suppressed.

[0123] Also in this embodiment, the conductive layer 405 arranged so as to overlap the inclined portions 34, 35 (groove 36) in orthogonal projection onto the main surface 12 of the substrate 1 is set to a potential close to that of the upper electrode 5 or the same potential as that of the upper electrode 5. Therefore, the electric field intensity in the direction B applied to the portion of the organic layer 40 arranged on the inclined portions 34, 35 can be suppressed. Therefore, similarly to the above, it is possible to suppress the crosstalk between the light-emitting elements 100 and to suppress the leakage current between the lower electrode 2 and the upper electrode 5 via the organic layer 40.

[0124] The conductive layer 405 can be formed at the same time as the reflection region 105 is formed. By forming the conductive layer 405 and the reflection region 105 in the same process, it is possible to suppress an increase in the number of steps for manufacturing the light-emitting device 10. When the conductive layer 405 is formed at the same time as the reflection region 105, the conductive layer 405 includes a reflective layer 402 having the same main component as the reflective layer 102 between the interlayer insulating layer 22 and the insulating layer 30, and an electrolytic corrosion suppression layer 403 having the same main component as the electrolytic corrosion suppression layer 103 between the reflective layer 402 and the insulating layer 30. Therefore, the height of the lower surface of the reflection region 105 and the lower surface of the conductive layer 405 from the main surface 12 of the substrate 1 may be the same. In addition, for example, the height of the upper surface of the reflection region 105 and the upper surface of the conductive layer 405 from the main surface 12 of the substrate 1 may be the same. In other words, the conductive layer 505 and the reflection region 105 may be disposed at the same height from the main surface 12 of the substrate 1.

[0125] In the configurations shown in Figures 17, 18, 23, and 24, the contact portion 51 (supply electrode 8) of the upper electrode 5 is not provided in the display region 3000. However, this is not limited to this, and in addition to the configurations shown in Figures 17, 18, 23, and 24, the contact portion 51 (supply electrode 8) may be arranged in the display region 3000 as in each of the configurations shown in Figures 2 to 8. The above-mentioned respective embodiments may be used in combination as appropriate.

[0126] Here, application examples in which the light emitting device 10 of this embodiment is applied to a display device, a photoelectric conversion device, an electronic device, a lighting device, a moving object, and a wearable device will be described with reference to Figs. 25 to 31(a) and 31(b).

[0127] FIG. 25 is a schematic diagram showing an example of a display device using the light-emitting device 10 of this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. An active element such as a transistor is disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if the display device 1000 is a portable device, it is not necessary to dispose the battery 1008 at this position. The light-emitting device 10 can be applied to the display panel 1005. The display area 3000 of the light-emitting device 10 functioning as the display panel 1005 is connected to an active element such as a transistor disposed on the circuit board 1007 and operates.

[0128] The display device 1000 shown in Fig. 25 may be used as a display unit of a photoelectric conversion device (imaging device) having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device, or may be a display unit disposed within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0129] FIG. 26 is a schematic diagram showing an example of a photoelectric conversion device using the light emitting device 10 of the present embodiment. The photoelectric conversion device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light emitting device 10 of the present embodiment can be applied to the viewfinder 1101 and the rear display 1102, which are display units. In this case, the display area 3000 of the light emitting device 10 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, and the possibility that the subject will be blocked by an obstruction.

[0130] Since the timing suitable for capturing an image is often short, it is better to display information as soon as possible. Therefore, a light emitting device 10 in which an organic light emitting element 100 using an organic light emitting material such as an organic EL element is arranged in a display area 3000 may be used in a viewfinder 1101 or a rear display 1102. This is because organic light emitting materials have a fast response speed. A light emitting device 10 using an organic light emitting material is more suitable than a liquid crystal display device for such devices that require a high display speed.

[0131] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has a plurality of lenses, and forms an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focal points of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0132] The light emitting device 10 may be applied to a display unit of an electronic device. In that case, the light emitting device 10 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head mounted display.

[0133] FIG. 27 is a schematic diagram showing an example of an electronic device using the light emitting device 10 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. A portable device having a communication unit can also be called a communication device. The light emitting device 10 of this embodiment can be applied to the display unit 1201.

[0134] 28(a) and 28(b) are schematic diagrams showing an example of a display device using the light emitting device 10 of the present embodiment. FIG. 28(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light emitting device 10 of the present embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 28(a). For example, the lower side of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0135] FIG. 28(b) is a schematic diagram showing another example of a display device using the light-emitting device 10 of the present embodiment. The display device 1310 of FIG. 28(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 10 of the present embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without a joint. The first display unit 1311 and the second display unit 1312 can be separated at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit may display one image.

[0136] FIG. 29 is a schematic diagram showing an example of an illumination device using the light emitting device 10 of the present embodiment. The illumination device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The light emitting device 10 of the present embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion section 1405 can effectively diffuse the light of the light source, such as for lighting up, and deliver the light to a wide range. If necessary, a cover may be provided on the outermost part. The illumination device 1400 may have both the optical film 1404 and the light diffusion section 1405, or only one of them.

[0137] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white light, neutral white light, or any other color from blue to red. It may have a dimming circuit that dims the light. The lighting device 1400 may have a power supply circuit connected to the display area 3000 of the light-emitting device 10 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. Moreover, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. Moreover, the lighting device 1400 may have a color filter. Moreover, the lighting device 1400 may have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.

[0138] FIG. 30 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 10 of this embodiment. The automobile 1500 may have a tail lamp 1501, and may be configured to turn on the tail lamp 1501 when braking or the like is performed. The light emitting device 10 of this embodiment may be used as a head lamp as a vehicle lamp. An automobile is an example of a moving body, and the moving body may be a ship, a drone, an aircraft, a railroad car, an industrial robot, or the like. The moving body may have a machine body and a lamp provided thereon. The lamp may indicate the current position of the machine body.

[0139] The light emitting device 10 of the present embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the display area 3000 of the light emitting device 10 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, and may be made of polycarbonate or the like. The protective member may be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0140] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display. The light emitting device 10 of the present embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light emitting device 10 are made of transparent members.

[0141] 31(a) and 31(b), further application examples of the light emitting device 10 of the present embodiment will be described. The light emitting device 10 can be applied to systems that can be worn as wearable devices, such as smart glasses, head mounted displays (HMDs), and smart contacts. An image capturing and displaying device used in such application examples has an image capturing device capable of photoelectrically converting visible light, and a light emitting device capable of emitting visible light.

[0142] 31(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a light emitting device 10 of this embodiment is provided on the back side of the lens 1601.

[0143] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 10 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting devices 10 to 70. The lens 1601 is formed with an optical system for collecting light on the image capture device 1602.

[0144] FIG. 31(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and an imaging device corresponding to the imaging device 1602 and a light emitting device 10 are mounted on the control device 1612. An optical system for projecting light emitted from the imaging device in the control device 1612 and the light emitting device 10 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light emitting device 10, and controls the operation of the imaging device and the light emitting device 10. The control device 1612 may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction unit that reduces the amount of light from the infrared light emitting unit to the display unit in a plan view, degradation of image quality is reduced.

[0145] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0146] More specifically, a gaze detection process based on the pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0147] The light emitting device 10 according to an embodiment of the present disclosure may have an imaging device having a light receiving element, and may control a display image based on user line-of-sight information from the imaging device.

[0148] Specifically, the light emitting device 10 determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line of sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 10, or may be received from an external control device. In the display area of ​​the light emitting device 10, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0149] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 10, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0150] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the light-emitting device 10, the imaging device, or an external device. If included in the external device, it is transmitted to the light-emitting device 10 via communication.

[0151] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0152] The disclosure of this specification includes the following light-emitting device, display device, photoelectric conversion device, electronic device, lighting device, and mobile object.

[0153] (Item 1) A light-emitting device comprising: an insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the insulating layer; an organic layer disposed so as to cover the plurality of lower electrodes; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, In an orthogonal projection onto the main surface, the insulating layer has grooves between each of the plurality of lower electrodes and the contact portion; a thickness of the charge generating layer in the groove being thinner than a thickness of the charge generating layer on the lower electrode;

[0154] (Item 2) the plurality of lower electrodes include a first lower electrode and a second lower electrode adjacent to each other, 2. The light-emitting device according to item 1, characterized in that, in an orthogonal projection onto the main surface, the contact portion is arranged between the first lower electrode and the second lower electrode and is at least partially surrounded by the groove.

[0155] (Item 3) the plurality of lower electrodes further includes a third lower electrode and a fourth lower electrode adjacent to each other; In an orthogonal projection onto the main surface, the contact portion is not disposed between the third lower electrode and the fourth lower electrode, 3. The light emitting device according to item 2, wherein the distance between the centers of the first lower electrode and the second lower electrode is the same as the distance between the centers of the third lower electrode and the fourth lower electrode.

[0156] (Item 4) the plurality of lower electrodes further includes a third lower electrode and a fourth lower electrode adjacent to each other; In an orthogonal projection onto the main surface, the contact portion is not disposed between the third lower electrode and the fourth lower electrode, 3. The light emitting device according to item 2, wherein the distance between the centers of the first lower electrode and the second lower electrode is longer than the distance between the centers of the third lower electrode and the fourth lower electrode.

[0157] (Item 5) 5. The light emitting device according to item 4, wherein the distance between the centers of the first lower electrode and the second lower electrode is twice the distance between the centers of the third lower electrode and the fourth lower electrode.

[0158] (Item 6) 2. The light-emitting device according to item 1, wherein in an orthogonal projection onto the main surface, portions of the organic layer that are in contact with the plurality of lower electrodes are at least partially surrounded by the grooves.

[0159] (Item 7) the plurality of lower electrodes include a first lower electrode and a second lower electrode adjacent to each other, 7. The light emitting device according to item 6, wherein in an orthogonal projection onto the main surface, the contact portion is disposed between the first lower electrode and the second lower electrode.

[0160] (Item 8) In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, 7. The light emitting device according to item 6, wherein the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed.

[0161] (Item 9) In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral region outside a display region in which the plurality of lower electrodes are disposed, the upper electrode is disposed outside the organic layer in the peripheral region, 7. The light emitting device according to item 6, wherein the contact portion is disposed in a region of the peripheral region that is outside the organic layer.

[0162] (Item 10) 10. The light-emitting device according to item 8 or 9, wherein the upper electrode and the charge generating layer are electrically connected in the peripheral region.

[0163] (Item 11) In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, 2. The light-emitting device according to item 1, wherein the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed, and is at least partially surrounded by the groove.

[0164] (Item 12) In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed, 2. The light emitting device according to item 1, wherein the display area is at least partially surrounded by the groove.

[0165] (Item 13) In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral region outside a display region in which the plurality of lower electrodes are disposed, the upper electrode is disposed outside the organic layer in the peripheral region, the contact portion is disposed in a region of the outer periphery region that is outer than the organic layer, 2. The light emitting device according to item 1, wherein the display area is at least partially surrounded by the groove.

[0166] (Item 14) Item 14. The light-emitting device according to item 13, wherein the upper electrode and the charge generating layer are electrically connected in the peripheral region.

[0167] (Item 15) the plurality of functional layers includes a first functional layer in contact with the plurality of lower electrodes, A light-emitting device described in any one of items 1 to 14, characterized in that the distance between the opposing upper edges of the grooves is more than twice the thickness of the portion of the first functional layer that contacts the multiple lower electrodes.

[0168] (Item 16) 16. The light emitting device according to any one of items 1 to 15, wherein the length between the opposing upper sides of the groove is shorter than the depth of the groove.

[0169] (Item 17) 17. A light-emitting device according to any one of claims 1 to 16, characterized in that the portion of the charge generating layer that is embedded in the groove includes a portion having a thickness that is less than half that of the portion of the charge generating layer that is disposed on the plurality of lower electrodes.

[0170] (Item 18) 18. The light-emitting device according to any one of items 1 to 17, wherein the portion of the charge generating layer that is recessed into the groove includes a discontinuous portion.

[0171] (Item 19) 19. The light emitting device according to any one of items 1 to 18, wherein the upper electrode does not extend into the groove.

[0172] (Item 20) 20. The light emitting device according to any one of items 1 to 19, wherein the upper electrode is disposed continuously on the groove.

[0173] (Item 21) A light-emitting device comprising: an insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the insulating layer; an organic layer disposed so as to cover the plurality of lower electrodes; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, a light-emitting device, characterized in that an electric field application electrode for applying an electric field to the charge generation layer is arranged between the insulating layer and the organic layer, and between each of the plurality of lower electrodes and the contact portion in an orthogonal projection onto the main surface.

[0174] (Item 22) 22. The light-emitting device according to item 21, wherein a voltage equal to or higher than the light-emitting threshold of the light-emitting layer is applied between the electric field application electrode and the upper electrode during operation of the light-emitting device.

[0175] (Item 23) A light emitting device including: a first insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the first insulating layer; a second insulating layer disposed on the first insulating layer and between the plurality of lower electrodes; an organic layer disposed so as to cover the plurality of lower electrodes and the second insulating layer; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, a surface of the second insulating layer facing the organic layer has an inclined portion inclined with respect to the main surface between each of the lower electrodes and the contact portion in an orthogonal projection onto the main surface; a conductive layer is further disposed between the main surface and the inclined portion so as to overlap the inclined portion in an orthogonal projection onto the main surface; The potential of the conductive layer is When the plurality of lower electrodes are anodes and the upper electrode is a cathode, the upper electrode is lower than the plurality of lower electrodes, When the plurality of lower electrodes are cathodes and the upper electrode is an anode, the upper electrode is higher than the plurality of lower electrodes.

[0176] (Item 24) 24. The light emitting device according to item 23, wherein a difference between the potential of the conductive layer and the potential of the upper electrode is smaller than a difference between the potential of the conductive layer and the potentials of the plurality of lower electrodes.

[0177] (Item 25) 25. The light-emitting device according to item 23 or 24, wherein the potential of the conductive layer is the same as the potential of the upper electrode.

[0178] (Item 26) 25. The light emitting device according to any one of items 23 to 24, wherein the conductive layer is electrically connected to the upper electrode.

[0179] (Item 27) a groove is provided on the surface of the second insulating layer so as to surround each of the plurality of lower electrodes; 27. The light emitting device according to any one of items 23 to 26, wherein the inclined portion constitutes a side wall of the groove.

[0180] (Item 28) 28. The light emitting device according to any one of items 23 to 27, wherein the inclined portion forms an angle of 50° or more with respect to a virtual plane parallel to the main surface.

[0181] (Item 29) the plurality of lower electrodes are light-transmitting; a reflective region including a reflective layer is disposed between the main surface and the first insulating layer so as to correspond to each of the plurality of lower electrodes; 29. The light emitting device according to any one of items 23 to 28, wherein the reflective region functions as the conductive layer.

[0182] (Item 30) the plurality of lower electrodes are light-transmitting; a reflective region including a reflective layer is disposed between the main surface and the first insulating layer so as to correspond to each of the plurality of lower electrodes; The reflective region is electrically connected to a corresponding one of the plurality of lower electrodes, 29. The light emitting device according to any one of items 23 to 28, wherein the conductive layer is not electrically connected to the reflective area.

[0183] (Item 31) Item 31. The light emitting device according to item 30, wherein the conductive layer and the reflective region are disposed at the same height from the main surface.

[0184] (Item 32) 32. The light emitting device according to any one of items 23 to 31, wherein the conductive layer is not electrically connected to the plurality of lower electrodes.

[0185] (Item 33) 33. A display device comprising: a light-emitting device according to any one of items 1 to 32; and an active element connected to the light-emitting device.

[0186] (Item 34) The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 33. A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element, and the photoelectric conversion device has the light-emitting device according to any one of items 1 to 32.

[0187] (Item 35) A display device having a housing and a communication unit provided in the housing for communicating with an external device, 33. An electronic device, wherein the display unit comprises the light-emitting device according to any one of items 1 to 32.

[0188] (Item 36) A lighting device having a light source and at least one of a light diffusion unit and an optical film, 33. An illumination device, wherein the light source comprises the light emitting device according to any one of items 1 to 32.

[0189] (Item 37) A moving body having a body and a lighting device provided on the body, The lighting device is a moving body having the light emitting device according to any one of items 1 to 32.

[0190] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0191] 1: substrate, 2: lower electrode, 5: upper electrode, 8: supply electrode, 9: groove, 10: light emitting device, 12: main surface, 30: insulating layer, 40: organic layer, 41, 43: functional layer, 42: charge generating layer, 51: contact portion

Claims

1. A light-emitting device comprising: an insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the insulating layer; an organic layer disposed so as to cover the plurality of lower electrodes; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, In an orthogonal projection onto the main surface, the insulating layer has grooves between each of the plurality of lower electrodes and the contact portion; a thickness of the charge generating layer in the grooves being thinner than a thickness of the charge generating layer on the plurality of lower electrodes;

2. the plurality of lower electrodes include a first lower electrode and a second lower electrode adjacent to each other, 2. The light-emitting device according to claim 1, wherein, in an orthogonal projection onto the main surface, the contact portion is disposed between the first lower electrode and the second lower electrode and is at least partially surrounded by the groove.

3. the plurality of lower electrodes further includes a third lower electrode and a fourth lower electrode adjacent to each other; In an orthogonal projection onto the main surface, the contact portion is not disposed between the third lower electrode and the fourth lower electrode, 3. The light emitting device according to claim 2, wherein a distance between the centers of the first lower electrode and the second lower electrode is the same as a distance between the centers of the third lower electrode and the fourth lower electrode.

4. the plurality of lower electrodes further includes a third lower electrode and a fourth lower electrode adjacent to each other; In an orthogonal projection onto the main surface, the contact portion is not disposed between the third lower electrode and the fourth lower electrode, 3. The light emitting device according to claim 2, wherein a distance between the centers of the first lower electrode and the second lower electrode is longer than a distance between the centers of the third lower electrode and the fourth lower electrode.

5. 5. The light emitting device according to claim 4, wherein the distance between the centers of the first lower electrode and the second lower electrode is twice as long as the distance between the centers of the third lower electrode and the fourth lower electrode.

6. 2 . The light-emitting device according to claim 1 , wherein, in an orthogonal projection onto the principal surface, portions of the organic layer that are in contact with the plurality of lower electrodes are at least partially surrounded by the grooves.

7. the plurality of lower electrodes include a first lower electrode and a second lower electrode adjacent to each other, 7. The light emitting device according to claim 6, wherein the contact portion is disposed between the first lower electrode and the second lower electrode in an orthogonal projection onto the main surface.

8. In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, 7. The light emitting device according to claim 6, wherein the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed.

9. In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral region outside a display region in which the plurality of lower electrodes are disposed, the upper electrode is disposed outside the organic layer in the peripheral region, The light emitting device according to claim 6 , wherein the contact portion is disposed in a region of the peripheral region that is located outside the organic layer.

10. The light-emitting device according to claim 1, wherein the upper electrode and the charge generating layer are electrically connected.

11. In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, The light-emitting device according to claim 1 , wherein the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed, and is at least partially surrounded by the groove.

12. In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral area outside a display area in which the plurality of lower electrodes are disposed, the contact portion is disposed in a region of the outer periphery region in which the organic layer is disposed, 2. The light emitting device of claim 1, wherein the display area is at least partially surrounded by the groove.

13. In the orthogonal projection onto the principal surface, the organic layer and the upper electrode are disposed up to a peripheral region outside a display region in which the plurality of lower electrodes are disposed, the upper electrode is disposed outside the organic layer in the peripheral region, the contact portion is disposed in a region of the outer periphery region that is outer than the organic layer, 2. The light emitting device of claim 1, wherein the display area is at least partially surrounded by the groove.

14. 14. The light-emitting device according to claim 13, wherein the upper electrode and the charge generating layer are electrically connected in the peripheral region.

15. the plurality of functional layers includes a first functional layer in contact with the plurality of lower electrodes, The light-emitting device according to claim 1 , wherein the distance between the opposing upper sides of the grooves is at least twice the thickness of the portion of the first functional layer that contacts the multiple lower electrodes.

16. 2. The light emitting device according to claim 1, wherein a length between opposing upper sides of the groove is shorter than a depth of the groove.

17. The light-emitting device according to claim 1, characterized in that the portion of the charge generating layer that is embedded in the groove includes a portion having a film thickness that is less than half that of the portion of the charge generating layer that is disposed above the multiple lower electrodes.

18. 2. The light emitting device according to claim 1, wherein the portion of the charge generating layer that is recessed into the groove includes a discontinuous portion.

19. The light emitting device according to claim 1 , wherein the upper electrode does not extend into the groove.

20. 2. The light emitting device according to claim 1, wherein the upper electrode is disposed continuously above the groove.

21. A light-emitting device comprising: an insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the insulating layer; an organic layer disposed so as to cover the plurality of lower electrodes; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, a light-emitting device, characterized in that an electric field application electrode for applying an electric field to the charge generation layer is arranged between the insulating layer and the organic layer, and between each of the plurality of lower electrodes and the contact portion in an orthogonal projection onto the main surface.

22. 22. The light-emitting device according to claim 21, wherein a voltage equal to or higher than a light-emitting threshold of the light-emitting layer is applied between the electric field application electrode and the upper electrode during operation of the light-emitting device.

23. A light emitting device including: a first insulating layer disposed on a main surface of a substrate; a plurality of lower electrodes disposed on the first insulating layer; a second insulating layer disposed on the first insulating layer and between the plurality of lower electrodes; an organic layer disposed so as to cover the plurality of lower electrodes and the second insulating layer; an upper electrode disposed so as to cover the organic layer; and a supply electrode that supplies a potential to the upper electrode, the organic layer includes a plurality of functional layers each including a light-emitting layer, and a charge generating layer disposed between the plurality of functional layers; the upper electrode includes a contact portion in contact with the supply electrode, a surface of the second insulating layer facing the organic layer has an inclined portion inclined with respect to the main surface between each of the lower electrodes and the contact portion in an orthogonal projection onto the main surface; a conductive layer is further disposed between the main surface and the inclined portion so as to overlap the inclined portion in an orthogonal projection onto the main surface; The potential of the conductive layer is When the plurality of lower electrodes are anodes and the upper electrode is a cathode, the upper electrode is lower than the plurality of lower electrodes, When the plurality of lower electrodes are cathodes and the upper electrode is an anode, the upper electrode is higher than the plurality of lower electrodes.

24. 24. The light emitting device according to claim 23, wherein a difference between a potential of the conductive layer and a potential of the upper electrode is smaller than a difference between a potential of the conductive layer and a potential of the plurality of lower electrodes.

25. 24. The light emitting device of claim 23, wherein the electrical potential of the conductive layer is the same as the electrical potential of the top electrode.

26. 24. The light emitting device of claim 23, wherein the conductive layer is electrically connected to the top electrode.

27. a groove is provided on the surface of the second insulating layer so as to surround each of the plurality of lower electrodes; 24. The light emitting device according to claim 23, wherein the inclined portion constitutes a side wall of the groove.

28. 24. The light emitting device according to claim 23, wherein an angle of the inclined portion with respect to a virtual plane parallel to the main surface is 50 degrees or more.

29. the plurality of lower electrodes are light-transmitting; a reflective region including a reflective layer is disposed between the main surface and the first insulating layer so as to correspond to each of the plurality of lower electrodes; 24. The light emitting device of claim 23, wherein the reflective area functions as the conductive layer.

30. the plurality of lower electrodes are light-transmitting; a reflective region including a reflective layer is disposed between the main surface and the first insulating layer so as to correspond to each of the plurality of lower electrodes; The reflective region is electrically connected to a corresponding one of the plurality of lower electrodes, 24. The light emitting device of claim 23, wherein the conductive layer is not electrically connected to the reflective area.

31. 31. The light emitting device according to claim 30, wherein the conductive layer and the reflective region are disposed at the same height from the main surface.

32. 24. The light emitting device of claim 23, wherein the conductive layer is not electrically connected to the plurality of bottom electrodes.

33. 33. A display device comprising: a light-emitting device according to claim 1; and an active element connected to the light-emitting device.

34. The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 33. A photoelectric conversion device, comprising: the display unit for displaying an image captured by the imaging element; and the light-emitting device according to claim 1.

35. A display device having a housing and a communication unit provided in the housing for communicating with an external device, 33. An electronic device, comprising: a display unit comprising the light-emitting device according to claim 1.

36. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 33. An illumination device, characterized in that the light source comprises a light emitting device according to any one of claims 1 to 32.

37. A moving body having a body and a lighting device provided on the body, 33. A moving body, wherein the lighting device comprises the light emitting device according to claim 1.

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